TW201406983A - 承載器及氣相成長裝置 - Google Patents
承載器及氣相成長裝置 Download PDFInfo
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- 238000001947 vapour-phase growth Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 230000002093 peripheral effect Effects 0.000 claims description 37
- 239000012071 phase Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 7
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 238000002407 reforming Methods 0.000 description 1
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- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract
本發明係一種承載器,係可旋轉地設置在腔室內,具有複數個基板載置部供載置要堆積薄膜之基板並使該基板能自轉,該承載器係在內周部具有開口部並形成圓圈狀,該開口部係供插入用以旋轉承載器之旋轉軸,在外周部及/或前述開口部之周緣部具有複數個向直徑方向延伸之切口。
Description
本發明係關於一種氣相成長裝置,係一邊加熱自轉公轉之複數基板一邊於前述基板上供給氣相原料並使薄膜成長。
本案係根據2012年7月6日於日本所申請之特願2012-151967號主張優先權,在此沿用其內容。
一種在半導體基板上使半導體薄膜成長之方法,係在磊晶成長法中對高溫之反應爐內供給原料氣體,並藉由熱分解與氣相反應而使薄膜成長。如此,在用以實施磊晶成長法之裝置之氣相成長裝置中,於承載器載置基板,並且從承載器下表面側進行加熱使基板成為高溫,故承載器下表面側成為高溫。另外,「承載器」是指可於其上表面載置複數個基板並加熱使熱傳導至基板之支撐體。
另一方面,在承載器之上表面側有原料氣體流動,故因原料氣體而使承載器上表面側之熱散去。
因此在承載器之上表面側與下表面側產生溫度差,並使承載器產生熱應力,而在承載器產生龜裂或破裂。
為了解決如此問題,例如專利文獻1中,係在承載器外周部設置之垂下之裙部,同時在承載器外周部於接近配置於
該外周部之環與前述裙部之間設置微小間隙,藉由前述微小間隙而使承載器之上部空間與下部空間連通。
藉此可消除承載器外周部上下的溫度偏差,而不會產生龜裂或破裂。
專利文獻1:日本特開2000-12470號公報
最近,由於係一次處理多片基板,因此載置基板之承載器會有大型化之傾向。為了使承載器所載置之複數片基板均勻地成長薄膜,故製造使承載器旋轉同時使基板自轉之所謂自轉公轉式之氣相成長裝置。
如此,自轉公轉式氣相成長裝置之承載器,係例如在中心具有供旋轉軸插入之開口,並形成在該開口部與外周部之間具有由在周方向設置之複數開口部所構成之基板載置部的複雜形狀。
此外,在承載器內周部設置有原料氣體之供給口時,為了抑制原料氣體到達基板前之氣相反應,故以使承載器內周部之溫度變低之方式構成。此外,承載器外周部係成為將排氣體導入排氣線路之空間,因必須使氣體冷卻至排氣配管之耐熱溫度以下,而亦以使承載器外周部之溫度設定變低之方式構成。
如此,承載器之基板載置位置附近之中周部係較高溫,相反地承載器之內周部與外周部係較低溫,故承載器亦在直徑方向產生溫度差。
大型化之承載器係因其形狀複雜化、且承載器會因
曝露在上下表面也在直徑方向產生溫度差之環境等原因,而更產生溫度分布,而由此產生龜裂或破裂。
為了防止產生如此龜裂或破裂,例如採用專利文獻1所記載之方法,即使專利文獻1之承載器可適用於載置單一基板之小型承載器,但卻不適用於大型化之承載器。
此外,專利文獻1之方法雖係在承載器外周部設有裙部,但若在大型化之承載器設置此種裙部,則必須以有厚度之一體物來製作承載器。但是,通常,承載器係由碳等之塊狀物所切削,故在儘量確保構件方面,切削量越多則成本會變高,係不切實際的方法。
本發明係為解決該課題而研創者,其目的為提供一種具有載置複數片基板之基板載置部之承載器以及具有前述承載器之氣相成長裝置,該承載器不會產生因溫度分布所造成之龜裂。
本發明之目的係可藉由以下(1)至(5)而達成。
(1)一種承載器,係可旋轉地設置在腔室內,具有複數個基板載置部供載置要堆積薄膜之基板並使該基能自轉,該承載器係在內周部具有開口部並形成圓圈狀(donut shape),該開口部係供插入用以旋轉承載器之旋轉軸,而在外周部及/或前述開口部之周緣部具有複數個向直徑方向延伸之切口。
(2)如前述(1)項所述之承載器,其中,前述切口係設置在各基板載置部之間。
(3)如前述(1)或(2)項所述之承載器,其中,將前述切口設於前述承載器外周部,且在設於前述外周部之各切
口設置圓孔部。
(4)一種氣相成長裝置,係具備前述(1)至(3)項中任一項所述之承載器。
(5)一種氣相成長裝置,係具有如前述(3)項所述之承載器,該氣相成長裝置具有設置於前述承載器上表面之承載器蓋;以及設置於前述承載器下方,且具有可插通於前述圓孔部之可昇降之向上推舉棒的向上推舉機構;
藉由前述向上推舉棒而可向上推舉前述承載器蓋。
本發明中,承載器係在內周部形成具有開口部之甜甜圈狀,該開口部係插入用以旋轉承載器之旋轉軸,在外周部及/或前述開口部之周緣部具有複數個在直徑方向延伸之切口,藉此使成本便宜,且即使在面內有溫度差之狀況下承載器也不易產生龜裂,而可防止承載器之壽命降低。
1‧‧‧氣相成長裝置
3‧‧‧腔室
5、51、61‧‧‧承載器
6‧‧‧基板
7、11‧‧‧開口部
8‧‧‧基板載置部
9‧‧‧旋轉軸
10‧‧‧加熱器
12‧‧‧原料氣體導入部
13‧‧‧滾珠
14‧‧‧排氣部
15‧‧‧滾珠軸承機構
16‧‧‧切口
17‧‧‧齒輪
21‧‧‧固定齒輪
23‧‧‧袋部
33‧‧‧承載器蓋
63‧‧‧圓孔部
第1圖係本發明實施形態之承載器的俯視圖。
第2圖係具有本發明實施形態之承載器之氣相成長裝置的剖視圖。
第3圖係第1圖之承載器之其他態樣之承載器的俯視圖。
第4圖係第1圖及第3圖之承載器以外的態樣之承載器的俯視圖。
以下說明本發明之較佳例,但本發明並不限定於該
等例。在不脫離本發明主旨之範圍可進行構成之附加、省略、取代、及其他變更。
本發明一實施形態之氣相成長裝置1,係如第2圖所示為一種自轉公轉型氣相成長裝置,其係在扁平圓筒狀之腔室3內可旋轉地設置圓盤狀之承載器5,同時在承載器5之外周部可旋轉地設置複數個載置使薄膜成長之基板6之基板載置部8。
在腔室3中央設置有貫通腔室3之底面部分並用以可旋轉地支撐承載器5之旋轉軸9。
在腔室3之下部設有加熱器10作為加熱手段。基板載置部8如第2圖所示,使下表面暴露於加熱器10側而可直接接受來自加熱器10之輻射,故可有效率地將熱傳導至基板6。另外,加熱手段亦可為燈等。
此外,在腔室3之承載器5表面側中央部設有用以導入原料氣體(例如三甲基鎵與氨)之原料氣體導入部12,並在外周部設有排氣部14。
以下根據第1圖及第2圖詳細說明本發明特徴之承載器5。
<承載器>
承載器5係如第1圖所示為由圓盤狀所構成,在內周部形成具有開口部7之圓圈狀,該開口部7係供插入用以旋轉承載器5之旋轉軸9。
承載器5係由碳等熱良導體所構成,為防止原料氣體之腐食而實施SiC等鍍層。
在開口部7之周邊具有六個用以設置基板載置部8之圓形之開口部11。在開口部11外周係設有具有碳製或陶瓷製
之滾珠13之滾珠軸承機構15(參照第2圖)。
在開口部11可旋轉地設置有於外周部具有齒輪17之由圓盤狀所構成之基板載置部8。設置係透過滾珠軸承機構15而進行,在高溫時穩定並可旋轉基板載置部8。
承載器5係如第1圖所示,在承載器5外周之鄰接開口部11間的中間,在6處設有朝直徑方向延伸達預定長度之切口16。此外,在承載器5中央之開口部7的周緣部也同樣地設置有6處切口16。
切口16之長度越長則內部應力之緩和效果越高,但若過長則容易因承載器的本身重量或搬運時的衝撃而破裂,故因應兩者平衡而設定為適當長度。切口16之長度較佳為1至20mm,更佳為3至10mm。
如此,藉由設置切口16而可緩和承載器5成為高溫時所產生之內部應力(熱應力)。
根據第2圖說明將如上述承載器5設置於腔室3之狀態。
在承載器5之開口部7中,如第2圖所示,係可裝卸地插入有旋轉軸9之上部。藉此使承載器5可旋轉地設置在腔室3。
基板載置部8之齒輪17係與設置在外周側之固定齒輪21咬合,若旋轉承載器5則由固定齒輪21產生反作用力而使基板載置部8自轉。另外,亦可設置動齒輪取代固定齒輪21,並藉由前述動齒輪使基板載置部8自轉。
基板6係載置在以圓形狀設於基板載置部8之上表面之袋部23,因此若基板載置部8自轉則基板6也會自轉。若使承載器5
旋轉則基板6係以旋轉軸9為中心軸而公轉,因此形成自轉公轉。
另外,承載器5中係如第2圖所示,設置有覆蓋承載器5上表面之由圓盤狀所構成之承載器蓋33,以防止氣相成長時產生之生成物污染承載器5。以下詳細說明承載器蓋33。
<承載器蓋>
承載器蓋33係以與承載器5相同之構件構成,或考慮搬運或清洗耐性而以適當構件構成。
承載器蓋33之形狀係較承載器5大一圈,藉由使搬運用支架等滑入突出部分之下並由下往上提起,而可僅搬出承載器蓋33。藉此,可在成膜後僅更換被污染之承載器蓋33,而不需更換較重之承載器5。此外,承載器蓋33也有降低承載器5暴露於大氣所吸付之水分量的效果。
此外,因承載器蓋33覆蓋切口16,故亦可避免原料氣體由切口16流入加熱器10側。
另外,在第2圖之氣相成長裝置1中,將基板6設置在承載器5上,成長面係成為基板6之上側(面朝上型),但以防止塵屑附著之觀點來看可將基板6設置於承載器5之下表面,並成為成長面為基板6之下表面的構成。
說明使用如以上構成之本實施形態之氣相成長裝置1而使薄膜氣相成長之方法。
首先,將透過基板載置部8載置基板6之承載器5設置於腔室3內,在此狀態下旋轉旋轉軸9而使承載器5旋轉。藉由承載器5之旋轉,使載置於基板載置部8之基板6也進行自轉與公轉。
再者,啟動加熱器10而透過承載器5及基板載置部8將基板
6加熱至預定溫度。此時,承載器5係在直徑方向具有切口16,故可緩和因加熱所產生之內部應力,可防止承載器5產生破裂或龜裂。
在如此加熱狀態下,如第2圖中的箭頭所示,由原料氣體導入部12導入原料氣體。原料氣體係在加熱至高溫之承載器5上熱分解,並在通過基板6上方時分解在基板6上表面之氣體分子會堆積而形成膜。此時,基板6係自轉公轉故可使膜厚平均化。通過基板6之原料氣體係由排氣部14作為排放氣體而排出。
另外,成膜之基板6的回收方法,係有僅將基板6自承載器5由下往上提起之回收方法、或將每個承載器5運至別室後手動或自動自承載器5將基板6移至一次可收容多數片之匣容器之回收方法等。
如以上所述,本實施形態中,在承載器5之外周部及開口部7之周緣部具有複數個向直徑方向延伸之切口16。藉此可緩和因加熱產生之內部應力,且可防止承載器5破裂、或在承載器5產生龜裂,藉此可使成本便宜,即使是面內有溫度差之狀況承載器5也不易產生龜裂,可防止承載器5之壽命降低。
另外,切口16之形狀或位置並不限於上述者。上述之承載器5的其他態樣例如有如第3圖所示之承載器51。
承載器51係將設置在承載器1之開口部7之周緣部的切口16,如第3圖所示以使開口部7與基板載置部8用之開口部11連通之方式變更位置。藉此可使開口部11也發揮緩和應力之功能,且較承載器1可確保長度,故可得高應力緩和效果。
另外,就承載器51之其他態樣而言,開口部7之周緣部之切
口16之位置係與承載器1相同,並變更外周部之切口16之位置而與開口部11連通。
此外,切口16之形狀也不限於上述者。例如,第4圖之承載器61係形成在承載器51外周部所設之切口16前端設有直徑大於切口寬度之圓孔部63的形狀。藉此緩和應力往切口16前端之集中,並可使承載器61更不易破裂。
另外,上述實施形態中係例示具有6個基板載置部8用之開口部11之承載器(以下將承載器5、承載器51、承載器61統稱為承載器),但本發明之開口部11的數量並不限於此。例如可具有10個直徑更小之開口部11。此時,根據開口部11的數量或大小等而適當地變更切口16之形狀或數量、位置。
此外,在氣相成長裝置1可組合:由立設之由長形棒狀所構成且將前端設置成在俯視時與切口16成為同心圓狀之向上推舉棒;以及使該向上推舉棒之前端恆常地位於承載器下方並在動作時上升至比承載器上表面更上方處之向上推舉棒之昇降手段。以下說明書中將該等複數組之向上推舉棒及昇降手段統稱為向上推舉機構。
向上推舉機構係如上述般之構成,故在使承載器旋轉且在向上推舉棒前端的正上方具有切口16之狀態下,若使昇降手段動作並使向上推舉棒上升,則可插通切口16並僅將承載器蓋33向上推舉並予以支撐。
如此向上推舉之狀態下,能以叉子等承受承載器蓋33之下表面。換言之,即使不將承載器蓋33自承載器由下往上提起,亦可進行搬出。
若為如此向上推舉方式之搬出方法,則如上述以支架等由下往上提起之搬出方法,則無須設置將承載器蓋33設為大徑且並用以鉤住叉子等之突出部分。因此可將承載器蓋33設為與承載器同徑,因此不會在承載器蓋33產生溫度分布,且可防止龜裂產生。此外,在製造承載器蓋33時可使切削之材料減少,因而可大幅降低成本。
另外,亦可使此向上推舉機構以不是插通切口16而是插通圓孔部63之方式設置。圓孔部63之直徑係比切口16的寬度長,故可將向上推舉棒的直徑設為較粗,且調整也較簡單。
另外,上述說明中係列舉出僅將承載器蓋33向上推舉的例子,但若以使切口16或圓孔部63之位置從向上推舉棒之正上方偏移之狀態而向上推舉,則可依每個承載器蓋33使承載器向上推舉。藉此,與上述承載器蓋33之搬運方法同樣地,以叉子等支撐承載器之下表面,藉此可同時搬出承載器及承載器蓋33。
本發明可提供一種承載器及具有前述承載器之氣相成長裝置,該承載器係具有載置複數片基板之基板載置部,且不會產生因溫度分布所造成之龜裂。
5‧‧‧承載器
7、11‧‧‧開口部
16‧‧‧切口
Claims (5)
- 一種承載器,係可旋轉地設置在腔室內,具有複數個基板載置部供載置要堆積薄膜之基板並使該基能自轉,該承載器係在內周部具有開口部並形成圓圈狀,該開口部係供插入用以旋轉承載器之旋轉軸,在外周部及/或前述開口部之周緣部具有複數個向直徑方向延伸之切口。
- 如申請專利範圍第1項所述之承載器,其中,前述切口係設置在各基板載置部之間。
- 如申請專利範圍第1項或第2項所述之承載器,其中,將前述切口設於前述承載器外周部,且在設於前述外周部之各切口設置圓孔部。
- 一種氣相成長裝置,係具備申請專利範圍第1至3項中任一項所述之承載器。
- 一種氣相成長裝置,係具有申請專利範圍第3項所述之承載器,該氣相成長裝置係具有:設置於前述承載器上表面之承載器蓋;以及設置於前述承載器下方,且具有可插通於前述圓孔部之可昇降之向上推舉棒的向上推舉機構;藉由前述向上推舉棒而可向上推舉前述承載器蓋。
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