TW201346048A - A film forming apparatus and a plate for capturing particles - Google Patents

A film forming apparatus and a plate for capturing particles Download PDF

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TW201346048A
TW201346048A TW101132733A TW101132733A TW201346048A TW 201346048 A TW201346048 A TW 201346048A TW 101132733 A TW101132733 A TW 101132733A TW 101132733 A TW101132733 A TW 101132733A TW 201346048 A TW201346048 A TW 201346048A
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unevenness
film forming
collecting plate
particle collecting
forming apparatus
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TWI475123B (en
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Itsushi Iio
Atsunori Suzuki
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Sumitomo Heavy Industries
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/01Selective coating, e.g. pattern coating, without pre-treatment of the material to be coated

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A film forming apparatus and a particle capturing plate are provided to effectively prevent the exfoliation of a sedimentary film and to effectively capture film forming materials by forming uneven portions on the surface of the particle capturing plate. A film forming apparatus comprises a film forming chamber for coating film forming materials on a target film forming member. The film forming chamber has a particle capturing plate. First and second uneven portions (32,34) are formed on the surface of the particle capturing plate. The second uneven portions are formed on the first uneven portions and are minuter than the first uneven portions.

Description

成膜裝置及粒子捕集板 Film forming device and particle trapping plate

本發明係有關一種在被成膜材上進行成膜材料的成膜之成膜裝置及安裝於成膜裝置之顆粒捕集板。 The present invention relates to a film forming apparatus for forming a film forming material on a film-forming material, and a particle collecting plate attached to the film forming apparatus.

在形成ITO(Indium Tin Oxide:銦錫氧化物)膜等薄膜之成膜裝置中,有時在成膜室內成膜原子(成膜材料)會附著在基板等被成膜材以外的內壁等上,而使被稱作顆粒的粗大粒子堆積在內壁。該堆積著顆粒之膜有時會從成膜室的內壁剝離,在成膜室內飛散而附著於基板上,導致成膜品質的降低等問題。 In a film forming apparatus that forms a thin film such as an ITO (Indium Tin Oxide) film, a film-forming atom (film forming material) may adhere to an inner wall other than the film forming material such as a substrate. On top, coarse particles called particles are deposited on the inner wall. The film in which the particles are deposited may be peeled off from the inner wall of the film forming chamber, may be scattered in the film forming chamber, and may adhere to the substrate, resulting in problems such as a decrease in film forming quality.

因此,例如專利文獻1記載之成膜裝置中,在成膜室內配置有屏蔽構件。該屏蔽構件在其表面形成有由鋁或鋁合金構成之電漿熔射膜,而且電漿熔射膜的表面被粗化。藉此,利用屏蔽構件防止顆粒剝離。 Therefore, for example, in the film forming apparatus described in Patent Document 1, a shield member is disposed in the film formation chamber. The shield member is formed with a plasma spray film made of aluminum or an aluminum alloy on its surface, and the surface of the plasma spray film is roughened. Thereby, the peeling of the particles is prevented by the shield member.

此外,例如專利文獻2記載之成膜裝置中,在成膜室的內部配置具備維氏硬度100~130Hv的壓花加工面之電解銅箔,藉由電解銅箔防止顆粒剝離。 Further, for example, in the film forming apparatus described in Patent Document 2, an electrolytic copper foil having an embossed surface having a Vickers hardness of 100 to 130 Hv is placed inside the film forming chamber, and the particles are prevented from being peeled off by the electrolytic copper foil.

(先前技術文獻) (previous technical literature) (專利文獻) (Patent Literature)

專利文獻1:日本特開2008-291299號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-291299

專利文獻2:日本特開2001-234325號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2001-234325

然而,在上述習知之結構,由於成膜材料的捕集功能及顆粒堆積而成之堆積膜的保持性不足,必定會產生堆積膜的剝離。因此,關於堆積膜的剝離,希望有進一步的改善。 However, in the above-described conventional structure, peeling of the deposited film is inevitable due to insufficient collection function of the film forming material and insufficient retention of the deposited film by the deposition of particles. Therefore, further improvement is desired regarding the peeling of the deposited film.

本發明係為了解決上述課題而完成者,其目的在於提供一種能夠有效地抑制堆積膜的剝離之成膜裝置及顆粒捕集板。 The present invention has been made to solve the above problems, and an object of the invention is to provide a film forming apparatus and a particle collecting plate which can effectively suppress peeling of a deposited film.

本發明人等為了解決上述課題而重複進行深入研究,結果發現藉由將成膜材料附著之表面設為特定的形狀,能有效地捕集並保持成膜材料,從而完成了本發明。 In order to solve the above problems, the inventors of the present invention have conducted intensive studies. As a result, it has been found that the film-forming material can be efficiently collected and held by setting the surface on which the film-forming material adheres to a specific shape, and the present invention has been completed.

亦即,本發明之成膜裝置係具備成膜室,在該成膜室進行用於在被成膜材上成膜成膜材料之成膜處理,其特徵為,具備配置於成膜室內之顆粒捕集板,在顆粒捕集板的表面形成有第一凹凸和第二凹凸,該第二凹凸設置於第一凹凸上且比第一凹凸更微細。 In other words, the film forming apparatus of the present invention includes a film forming chamber in which a film forming process for forming a film forming material on the film forming material is performed, and the film forming process is provided in the film forming chamber. In the particle collecting plate, a first unevenness and a second unevenness are formed on a surface of the particle collecting plate, and the second unevenness is provided on the first unevenness and is finer than the first unevenness.

該成膜裝置中,在顆粒捕集板的表面形成有第一凹凸和比該第一凹凸更微細之第二凹凸。顆粒捕集板中,表面積藉由第一凹凸及第二凹凸而擴大,因此能夠確保成膜材料的附著面。並且,藉由微細的第二凹凸的錨定效果能夠有效地捕集成膜材料。而且,藉由其凹凸比第二凹凸更大 之第一凹凸能夠堆積並保持藉由第二凹凸捕集之成膜材料(顆粒)。因此,能夠有效地捕集並保持成膜材料。其結果,能夠有效地抑制堆積膜的剝離。 In the film forming apparatus, first unevenness and second unevenness finer than the first unevenness are formed on the surface of the particle collecting plate. In the particle collecting plate, since the surface area is enlarged by the first unevenness and the second unevenness, the adhesion surface of the film forming material can be secured. Further, the film material can be efficiently trapped by the anchoring effect of the fine second unevenness. Moreover, by its unevenness is larger than the second unevenness The first unevenness can deposit and hold the film forming material (particles) trapped by the second unevenness. Therefore, the film forming material can be effectively trapped and held. As a result, peeling of the deposited film can be effectively suppressed.

第一凹凸藉由第1加工形成,第二凹凸藉由在第1加工後實施之第2加工形成。如此,藉由在第1加工後實施第2加工來形成遍及第一凹凸的全面之第二凹凸。 The first unevenness is formed by the first processing, and the second unevenness is formed by the second processing performed after the first processing. In this manner, the second unevenness is formed throughout the first unevenness by performing the second processing after the first processing.

第1加工為滾紋加工,第2加工為鼓風噴擊加工。藉由使用這種加工方法,能夠分別良好地形成第一凹凸及第二凹凸。 The first processing is knurling, and the second processing is blasting. By using such a processing method, the first unevenness and the second unevenness can be formed favorably.

第一凹凸為藉由滾紋加工形成之斜紋。藉由將第一凹凸設為斜紋,能夠擴大顆粒捕集板中之表面積,其結果第二凹凸的形成面亦增加。因此,更能夠確保成膜材料的捕集面。並且藉由設為斜紋能夠從多方向捕集成膜材料。 The first unevenness is a twill formed by embossing. By forming the first unevenness as a twill, the surface area in the particle collecting plate can be enlarged, and as a result, the surface on which the second unevenness is formed also increases. Therefore, the trapping surface of the film forming material can be more ensured. And by setting the twill, it is possible to capture the film material from multiple directions.

第一凹凸的間距為1.6mm,第一凹凸的槽的深度為0.7mm。藉此,能夠更適宜地保持藉由第二凹凸捕集、堆積之顆粒,且更適宜地抑制堆積膜的剝離。 The pitch of the first unevenness was 1.6 mm, and the depth of the groove of the first unevenness was 0.7 mm. Thereby, it is possible to more suitably hold the particles collected and accumulated by the second unevenness, and it is more preferable to suppress the peeling of the deposited film.

顆粒捕集板為銅製板為較佳。藉由使用銅板,能夠良好地進行第一凹凸及第二凹凸的加工。 The particle trap plate is preferably a copper plate. By using a copper plate, the processing of the first unevenness and the second unevenness can be favorably performed.

顆粒捕集板的板厚以3mm為較佳。如此,藉由將板厚設為3mm,能夠確保剛性。因此,能夠良好地進行附著於顆粒捕集板之成膜材料的去除(清洗)操作。 The thickness of the particle collecting plate is preferably 3 mm. Thus, the rigidity can be ensured by setting the thickness to 3 mm. Therefore, the removal (cleaning) operation of the film-forming material attached to the particle collecting plate can be performed favorably.

另外,本發明之顆粒捕集板為配置於成膜裝置的成膜室內之顆粒捕集板,其特徵為,在表面形成有第一凹凸和第二凹凸,該第二凹凸設置於第一凹凸上且比第一凹凸更 微細。 Further, the particle collecting plate of the present invention is a particle collecting plate disposed in a film forming chamber of the film forming apparatus, and is characterized in that a first unevenness and a second unevenness are formed on the surface, and the second unevenness is provided on the first unevenness Above and more than the first bump Fine.

在該顆粒捕集板中形成有第一凹凸和比該第一凹凸更微細之第二凹凸。藉此,表面積藉由第一凹凸及第二凹凸而擴大,因此確保了成膜材料的附著面。另外,藉由微細之第二凹凸的錨定效果,能夠有效地捕集成膜材料。而且,藉由凹凸比第二凹凸更大之第一凹凸,能夠堆積並保持藉由第二凹凸捕集之成膜材料(顆粒)。因此,能夠有效地捕集並保持成膜材料。其結果,能夠抑制堆積膜的剝離。 A first unevenness and a second unevenness which is finer than the first unevenness are formed in the particle collecting plate. Thereby, since the surface area is enlarged by the first unevenness and the second unevenness, the adhesion surface of the film formation material is secured. Further, the film material can be efficiently collected by the anchoring effect of the fine second unevenness. Further, the film forming material (particles) collected by the second unevenness can be deposited and held by the first unevenness having a larger unevenness than the second unevenness. Therefore, the film forming material can be effectively trapped and held. As a result, peeling of the deposited film can be suppressed.

另外,在該顆粒捕集板中,第一凹凸的間距為1.6mm,第一凹凸的槽的深度成為0.7mm。藉此,能夠更適宜地保持藉由第二凹凸捕集、堆積之顆粒,且能夠更適宜地抑制堆積膜的剝離。 Further, in the particle collecting plate, the pitch of the first unevenness was 1.6 mm, and the depth of the groove of the first unevenness was 0.7 mm. Thereby, it is possible to more suitably hold the particles collected and accumulated by the second unevenness, and it is possible to more suitably suppress the peeling of the deposited film.

依本發明,能夠有效地抑制堆積膜的剝離。 According to the invention, it is possible to effectively suppress peeling of the deposited film.

以下,參閱附圖,對本發明的較佳實施方式進行說明,另外,在附圖的說明中對相同或相當之要件附加相同元件符號並省略重複說明。 In the following, the preferred embodiments of the present invention will be described with reference to the accompanying drawings.

第1圖係表示一實施方式之成膜裝置的結構之圖。第2圖係從橫向觀察第1圖所示之成膜裝置之圖。成膜裝置1具備:真空容器3,為成膜室;電漿槍5,為向真空容器3中供給電漿束PB之電漿源;陽極構件7,配置於真空容 器3內的底部並讓電漿束PB射入;搬運機構10,配置於真空容器3的上部並使承盤T在陽極構件7的上方移動。 Fig. 1 is a view showing the structure of a film forming apparatus of an embodiment. Fig. 2 is a view of the film forming apparatus shown in Fig. 1 as seen from the lateral direction. The film forming apparatus 1 includes a vacuum vessel 3 as a film forming chamber, a plasma gun 5 as a plasma source for supplying the plasma bundle PB into the vacuum vessel 3, and an anode member 7 disposed in the vacuum chamber. The bottom of the inside of the device 3 is injected with the plasma beam PB. The transport mechanism 10 is disposed at the upper portion of the vacuum container 3 and moves the retainer T above the anode member 7.

在此,電漿槍5為產生電漿束PB之壓力梯度型的電漿槍,在電漿槍5與真空容器3之間配置有將電漿束PB引導至真空容器3之中間電極12、中間電極14及轉向線圈(省略圖示)等。並且,陽極構件7包含:具有將來自電漿槍5之電漿束PB引導至下方並且收容成膜材料之爐床主體18之爐床16、和配置於其周圍之環狀的輔助陽極20。搬運機構10具備:複數個滾子24,在搬運路22內向水平方向排列;及驅動裝置(省略圖示),使這些滾子24以適當的速度旋轉來使承盤T以恆定速度移動。搬運路22內配置有加熱玻璃基板(被成膜材)W之加熱器26。 Here, the plasma gun 5 is a pressure gradient type plasma gun that generates the plasma beam PB, and between the plasma gun 5 and the vacuum container 3, an intermediate electrode 12 for guiding the plasma beam PB to the vacuum vessel 3 is disposed. The intermediate electrode 14 and the steering coil (not shown) are used. Further, the anode member 7 includes a hearth 16 having a hearth body P18 for guiding the plasma beam PB from the plasma gun 5 and accommodating the film forming material, and an annular auxiliary anode 20 disposed around the anode. The transport mechanism 10 includes a plurality of rollers 24 that are arranged in the horizontal direction in the transport path 22, and a drive device (not shown) that rotates the rollers 24 at an appropriate speed to move the retainer T at a constant speed. A heater 26 that heats a glass substrate (film formation material) W is disposed in the conveyance path 22.

該成膜裝置1中,在電漿槍5的陰極(省略圖示)與真空容器3內的爐床16之間產生放電,藉此生成電漿束PB。該電漿束PB被引導向藉由轉向線圈或輔助陽極20內的永久磁鐵等界定之磁場而到達爐床16。容納於爐床主體18之例如ITO(銦錫氧化物)等成膜材料藉由電漿束PB被加熱而蒸發。該蒸發之成膜材料(蒸發粒子)藉由電漿束PB被離子化,附著在藉由搬運機構10以恆定速度移動之承盤T的下面露出之玻璃基板W的表面,在此形成ITO(銦錫氧化物)等被膜。 In the film forming apparatus 1, discharge is generated between the cathode (not shown) of the plasma gun 5 and the hearth 16 in the vacuum vessel 3, whereby the plasma bundle PB is generated. The plasma beam PB is directed to the hearth 16 by a magnetic field defined by a steering coil or a permanent magnet or the like within the auxiliary anode 20. A film forming material such as ITO (Indium Tin Oxide) accommodated in the hearth body 18 is heated by the plasma beam PB to be evaporated. The evaporated film-forming material (evaporated particles) is ionized by the plasma beam PB, and adheres to the surface of the glass substrate W exposed by the lower surface of the tray T which is moved at a constant speed by the transport mechanism 10, thereby forming ITO ( Indium tin oxide) film.

在具有上述結構之成膜裝置1的真空容器3內,成膜材料附著在真空容器3的內側面(內壁)而使顆粒(粗大粒子)堆積。若該顆粒堆積一定程度,則有堆積之顆粒(膜)從真 空容器3的內側面剝離且在真空容器3內飛散並附著於玻璃基板W之虞。如此,產生污染玻璃基板W且品質下降之問題。 In the vacuum container 3 of the film forming apparatus 1 having the above configuration, the film forming material adheres to the inner side surface (inner wall) of the vacuum container 3 to deposit particles (coarse particles). If the particles accumulate to a certain extent, there are accumulated particles (film) from the true The inner side surface of the empty container 3 is peeled off and scattered in the vacuum container 3 and adhered to the glass substrate W. As a result, there is a problem that the glass substrate W is contaminated and the quality is lowered.

於是,成膜裝置1具備有配置於真空容器3內之顆粒捕集板30。顆粒捕集板30沿真空容器3的內側面配置且具有捕集並保持成膜材料之功能。顆粒捕集板30例如為銅製板構件,其厚度例如為3mm左右。以下,參閱第3圖及第4圖對顆粒捕集板30進行詳細說明。 Then, the film forming apparatus 1 is provided with the particle collecting plate 30 disposed in the vacuum container 3. The particle collecting plate 30 is disposed along the inner side surface of the vacuum vessel 3 and has a function of trapping and holding a film forming material. The particle collecting plate 30 is, for example, a copper plate member, and has a thickness of, for example, about 3 mm. Hereinafter, the particle collecting plate 30 will be described in detail with reference to FIGS. 3 and 4.

第3圖係表示顆粒捕集板的表面之圖。第4圖係放大表示第3圖所示之顆粒捕集板的表面之截面圖。 Figure 3 is a view showing the surface of the particle collecting plate. Fig. 4 is an enlarged cross-sectional view showing the surface of the particle collecting plate shown in Fig. 3.

如第3圖及第4圖所示,在顆粒捕集板30的表面30a形成有第1凹凸(第一凹凸)32與第2凹凸(第二凹凸)34。第1凹凸32為藉由滾紋加工形成之滾紋的斜紋。滾紋(英文名稱:Knurling)為由JIS B 0951規定者。 As shown in FIG. 3 and FIG. 4, the first unevenness (first unevenness) 32 and the second unevenness (second unevenness) 34 are formed on the surface 30a of the particle collecting plate 30. The first unevenness 32 is a twill of a embossing formed by embossing. Rolling (English name: Knurling) is defined by JIS B 0951.

第1凹凸32的凸部分的截面呈大致山形。換言之,第1凹凸32由槽和連結鄰接的槽之間之頂部構成。第1凹凸32的間距t例如為1.6mm。第1凹凸32之槽的深度(從底部至頂部之高度)h例如為0.7mm。第1凹凸32之槽為大致V字形,一邊與另一邊交叉之角度例如為90度。第1凹凸32例如藉由將滾紋工具壓在銅板上來壓扁銅板表面而使其塑性變形,或藉由切削銅板表面而形成。另外,間距t,深度h及槽的一邊與另一邊交叉之角度不限定於上述數值,可相對上述數值有若干增減,亦可以為其他數值。 The cross section of the convex portion of the first unevenness 32 has a substantially mountain shape. In other words, the first unevenness 32 is composed of a groove and a top portion between the adjacent grooves. The pitch t of the first unevenness 32 is, for example, 1.6 mm. The depth (height from the bottom to the top) h of the groove of the first unevenness 32 is, for example, 0.7 mm. The groove of the first unevenness 32 has a substantially V shape, and the angle at which the other side intersects with the other side is, for example, 90 degrees. The first unevenness 32 is formed by, for example, pressing a embossing tool against a copper plate to flatten the surface of the copper plate to be plastically deformed, or by cutting the surface of the copper plate. Further, the angle t, the depth h, and the angle at which one side of the groove intersects with the other side are not limited to the above numerical values, and may be increased or decreased with respect to the above numerical values, and may be other numerical values.

第2凹凸34形成於第1凹凸32上。第2凹凸34為藉由鼓風噴擊加工形成之微細的凹凸,與第1凹凸32相比凹凸非常小。藉由滾紋加工形成第1凹凸32之後,藉由鼓風噴擊加工在該第1凹凸32的表面形成第2凹凸34。亦即,第1凹凸32的表面(顆粒捕集板30的表面30a)成為粗面。 The second unevenness 34 is formed on the first unevenness 32. The second unevenness 34 is fine unevenness formed by the blasting process, and the unevenness is extremely small as compared with the first unevenness 32. After the first unevenness 32 is formed by embossing, the second unevenness 34 is formed on the surface of the first uneven 32 by blasting. That is, the surface of the first unevenness 32 (the surface 30a of the particle collecting plate 30) becomes a rough surface.

第2凹凸34例如使粒徑為300~355μm左右之投射物(例如氧化鋁)衝撞來形成為較佳,中心線平均粗糙度Rz例如為20~40μm左右為較佳。 For example, it is preferable that the second unevenness 34 is formed by colliding a projectile having a particle diameter of about 300 to 355 μm (for example, alumina), and the center line average roughness Rz is, for example, about 20 to 40 μm.

顆粒捕集板30以形成有第1凹凸32及第2凹凸34之表面30a朝向真空容器3的內側的方式配置於真空容器3內。具體而言,顆粒捕集板30以包圍陽極構件7的方式沿真空容器3的內側面配置。 The particle collecting plate 30 is disposed in the vacuum vessel 3 so that the surface 30a on which the first unevenness 32 and the second unevenness 34 are formed faces the inside of the vacuum chamber 3. Specifically, the particle collecting plate 30 is disposed along the inner side surface of the vacuum vessel 3 so as to surround the anode member 7.

顆粒捕集板30的與表面30a相反側的背面30b成為光澤面(未加工面)。在該背面30b設置有冷卻板40。冷卻板40為例如厚度為5mm左右之板狀構件,在真空容器3內配置於真空容器3的內側面與顆粒捕集板30之間。 The back surface 30b of the particle collecting plate 30 on the side opposite to the surface 30a is a shiny surface (raw surface). A cooling plate 40 is provided on the back surface 30b. The cooling plate 40 is, for example, a plate-like member having a thickness of about 5 mm, and is disposed between the inner side surface of the vacuum container 3 and the particle collecting plate 30 in the vacuum container 3.

冷卻板40藉由螺樁50與蓋型螺帽52安裝於顆粒捕集板30。第5圖係放大表示顆粒捕集板與冷卻板的安裝結構之截面圖。如第5圖所示,冷卻板40的其中一面40a與顆粒捕集板30的背面30b相對向地配置且與背面30b密合。另外,在此所言之密合只要顆粒捕集板30的背面30b與冷卻板40的其中一面40a至少面接觸即可。藉由這種結構,冷卻板40與顆粒捕集板30一體設置。 The cooling plate 40 is attached to the particle collecting plate 30 by a stud 50 and a cap nut 52. Fig. 5 is an enlarged cross-sectional view showing the mounting structure of the particle collecting plate and the cooling plate. As shown in Fig. 5, one surface 40a of the cooling plate 40 is disposed to face the back surface 30b of the particle collecting plate 30 and is in close contact with the back surface 30b. Further, as described above, the back surface 30b of the particle collecting plate 30 may be at least in surface contact with one surface 40a of the cooling plate 40. With this configuration, the cooling plate 40 is integrally provided with the particle collecting plate 30.

在顆粒捕集板30安裝冷卻板40時,從真空容器3的內側面側相對螺樁50以冷卻板40、顆粒捕集板30、緊壓墊圈54及蓋型螺帽52之順序組裝,將蓋型螺帽52藉由扳手緊固於螺樁。另外,螺樁50上設置有螺帽56,螺帽56上安裝有咬止用固定螺絲58。 When the cooling plate 40 is attached to the particle collecting plate 30, it is assembled from the inner side surface side of the vacuum container 3 to the screw pile 50 in the order of the cooling plate 40, the particle collecting plate 30, the pressing washer 54, and the cap nut 52. The cap nut 52 is fastened to the stud by a wrench. Further, a nut 56 is provided on the stud 50, and a snap fixing screw 58 is attached to the nut 56.

如第1圖及第2圖所示,在冷卻板40設置有讓冷卻劑(水)通過之冷卻管42。冷卻管42配置於冷卻板40的另一面40b側。冷卻管42遍及冷卻板40的全面而配置。藉由冷卻板40及冷卻管42構成冷卻機構。 As shown in FIGS. 1 and 2, the cooling plate 40 is provided with a cooling pipe 42 through which a coolant (water) passes. The cooling pipe 42 is disposed on the other surface 40b side of the cooling plate 40. The cooling pipe 42 is disposed over the entire surface of the cooling plate 40. The cooling plate 40 and the cooling pipe 42 constitute a cooling mechanism.

如上說明,本實施方式中,真空容器3內配置有顆粒捕集板30。顆粒捕集板30的表面30a上形成有第1凹凸32和第2凹凸34,前述第2凹凸比該第1凹凸32更微細。顆粒捕集板30中,表面積藉由第1凹凸32及第2凹凸34而擴大,確保了成膜材料的附著面。並且,藉由微細之第2凹凸34的錨定效果,能夠有效地捕集成膜材料。而且,能夠藉由凹凸比第2凹凸34更大之第1凹凸32堆積並保持藉由第2凹凸34捕集之顆粒。因此,能夠有效地捕集並保持成膜材料。其結果,能夠有效地抑制堆積膜的剝離。 As described above, in the present embodiment, the particle collecting plate 30 is disposed in the vacuum container 3. The first concavities and convexities 32 and the second concavities and convexities 34 are formed on the surface 30a of the particle collecting plate 30, and the second concavities and convexities are finer than the first concavities and convexities 32. In the particle collecting plate 30, the surface area is enlarged by the first unevenness 32 and the second unevenness 34, and the adhesion surface of the film forming material is secured. Further, the film material can be efficiently collected by the anchoring effect of the fine second unevenness 34. In addition, the particles which are collected by the second unevenness 34 can be deposited and held by the first unevenness 32 having a larger unevenness than the second unevenness 34. Therefore, the film forming material can be effectively trapped and held. As a result, peeling of the deposited film can be effectively suppressed.

另外,顆粒捕集板30其厚度為3mm左右,因此能夠確保剛性。因此,能夠良好地進行附著物的去除操作。並且,顆粒捕集板30中,形成有深度h為0.7mm左右之第1凹凸32,因此再生時只要在第1凹凸32上進行鼓風噴擊加工來形成第2凹凸34即可。因此,能夠簡單地進行 再生操作。其結果,可實現操作性的提高及成本的降低。 Further, since the particle collecting plate 30 has a thickness of about 3 mm, rigidity can be ensured. Therefore, the attachment removal operation can be performed favorably. In the particle collecting plate 30, the first unevenness 32 having a depth h of about 0.7 mm is formed. Therefore, the second unevenness 34 may be formed by performing air blow processing on the first unevenness 32 during the regeneration. Therefore, it is easy to carry out Regeneration operation. As a result, operability can be improved and cost can be reduced.

另外,由於第1凹凸32為藉由滾紋加工形成之斜紋,因此可實現表面積的擴大,並且與沿一方向形成孔(平紋)之情況相比,能夠從多方向捕集成膜材料。因此,可實現成膜材料捕集性的提高。 Further, since the first unevenness 32 is a twill formed by embossing, the surface area can be enlarged, and the film material can be collected from multiple directions than when a hole (plain) is formed in one direction. Therefore, an improvement in the trapping property of the film forming material can be achieved.

另外,若第1凹凸32的間距t為1.6mm,第一凹凸的槽的深度h為0.7mm,則能夠更適宜地保持藉由第2凹凸34捕集/堆積之顆粒,能夠更適宜地抑制堆積膜的剝離。 In addition, when the pitch t of the first unevenness 32 is 1.6 mm and the depth h of the groove of the first unevenness is 0.7 mm, it is possible to more suitably hold the particles collected and accumulated by the second unevenness 34, and it is possible to more suitably suppress Peeling of the deposited film.

另外,由於一體設置了顆粒捕集板30與冷卻板40,因此能夠在顆粒捕集板30本身附加冷卻功能。因此,能夠實現冷卻機構的結構的簡化進而實現成膜裝置1的結構的簡化。 Further, since the particle collecting plate 30 and the cooling plate 40 are integrally provided, it is possible to add a cooling function to the particle collecting plate 30 itself. Therefore, simplification of the structure of the cooling mechanism can be achieved to further simplify the structure of the film forming apparatus 1.

另外,由於顆粒捕集板30與冷卻板40藉由螺樁50及蓋型螺帽52安裝,因此即使為冷卻板40的板厚較薄之情況(例如5mm左右),亦能夠保護冷卻板40的安裝螺絲,能夠牢固地固定顆粒捕集板30與冷卻板40。 In addition, since the particle collecting plate 30 and the cooling plate 40 are attached by the stud 50 and the cap nut 52, even if the plate thickness of the cooling plate 40 is thin (for example, about 5 mm), the cooling plate 40 can be protected. The mounting screws are capable of firmly fixing the particle collecting plate 30 and the cooling plate 40.

本發明不限定於上述實施方式。例如,在上述實施方式中,藉由滾紋加工形成第1凹凸32,藉由鼓風噴擊加工形成第2凹凸34,但第1凹凸32及第2凹凸34可藉由其他加工方法形成。 The present invention is not limited to the above embodiment. For example, in the above-described embodiment, the first unevenness 32 is formed by embossing, and the second unevenness 34 is formed by blasting, but the first unevenness 32 and the second unevenness 34 can be formed by other processing methods.

另外,上述實施方式中,對顆粒捕集板30配置於藉由使用電漿之離子鍍進行成膜處理之成膜裝置1之結構進行了說明,但顆粒捕集板30可配置於藉由濺鍍等進行成膜處理之裝置。 Further, in the above-described embodiment, the configuration of the film forming apparatus 1 in which the particle collecting plate 30 is disposed by the ion plating using plasma is described. However, the particle collecting plate 30 may be disposed by sputtering. A device for performing a film formation process such as plating.

另外,上述實施方式中與顆粒捕集板30一體設置了冷卻板40,但依據成膜裝置1中真空容器3的溫度環境不設置冷卻板40亦可。 Further, in the above-described embodiment, the cooling plate 40 is integrally provided with the particle collecting plate 30. However, the cooling plate 40 may not be provided depending on the temperature environment of the vacuum container 3 in the film forming apparatus 1.

另外,上述實施方式中將顆粒捕集板30設為銅製板構件,但顆粒捕集板30可由其他材料構成。從加工簡易性的觀點出發,顆粒捕集板30以銅製板為較佳。 Further, in the above embodiment, the particle collecting plate 30 is made of a copper plate member, but the particle collecting plate 30 may be made of other materials. From the viewpoint of ease of processing, the particle collecting plate 30 is preferably a copper plate.

接著,上述實施方式中,對在第1凹凸32之凹部亦設置有微細之第2凹凸34之形態進行了說明,但在第1凹凸32的凹部可不設置第2凹凸34。在顆粒捕集板30中,當使更微細之第2凹凸34主要具有捕集成膜材料之功能,並使第1凹凸32的凹部主要具有保持堆積之成膜材料之功能時,即使如上述般在第1凹凸32的凹部不形成第2凹凸34亦能夠有效地抑制堆積膜的剝離。 In the above-described embodiment, the second uneven portion 34 is provided in the concave portion of the first uneven portion 32. However, the second uneven portion 34 may not be provided in the concave portion of the first uneven portion 32. In the particle collecting plate 30, when the finer second concavities and convexities 34 mainly have a function of trapping the film material, and the concave portions of the first concavities and convexities 32 mainly have a function of holding the deposited film forming material, even as described above When the second unevenness 34 is not formed in the concave portion of the first uneven portion 32, peeling of the deposited film can be effectively suppressed.

1‧‧‧成膜裝置 1‧‧‧ film forming device

3‧‧‧真空容器(成膜室) 3‧‧‧Vacuum container (film forming chamber)

30‧‧‧顆粒捕集板 30‧‧‧Particle capture board

30a‧‧‧表面 30a‧‧‧ surface

30b‧‧‧背面 30b‧‧‧back

32‧‧‧第1凹凸(第一凹凸) 32‧‧‧1st bump (first bump)

34‧‧‧第2凹凸(第二凹凸) 34‧‧‧2nd bump (second bump)

40‧‧‧冷卻板 40‧‧‧Cooling plate

50‧‧‧螺樁 50‧‧‧Snail pile

52‧‧‧蓋型螺帽 52‧‧‧cap nut

第1圖係表示一實施方式之成膜裝置的結構之圖。 Fig. 1 is a view showing the structure of a film forming apparatus of an embodiment.

第2圖係從橫向觀察第1圖所示之成膜裝置之圖。 Fig. 2 is a view of the film forming apparatus shown in Fig. 1 as seen from the lateral direction.

第3圖係表示顆粒捕集板的表面之圖。 Figure 3 is a view showing the surface of the particle collecting plate.

第4圖係放大表示第3圖所示之顆粒捕集板的表面之截面圖。 Fig. 4 is an enlarged cross-sectional view showing the surface of the particle collecting plate shown in Fig. 3.

第5圖係表示顆粒捕集板與冷卻板之安裝結構之截面圖。 Fig. 5 is a cross-sectional view showing the mounting structure of the particle collecting plate and the cooling plate.

30‧‧‧顆粒捕集板 30‧‧‧Particle capture board

30a‧‧‧表面 30a‧‧‧ surface

30b‧‧‧背面 30b‧‧‧back

32‧‧‧第1凹凸(第一凹凸) 32‧‧‧1st bump (first bump)

34‧‧‧第2凹凸(第二凹凸) 34‧‧‧2nd bump (second bump)

Claims (13)

一種成膜裝置,具備成膜室,在該進行用於在被成膜材上成膜成膜材料之成膜處理,其特徵為,具備配置於前述成膜室內之顆粒捕集板,在前述顆粒捕集板的表面形成有第一凹凸和第二凹凸,該第二凹凸設置於前述第一凹凸上且比前述第一凹凸更微細。 A film forming apparatus including a film forming chamber, and a film forming process for forming a film forming material on a film formation material, comprising: a particle collecting plate disposed in the film forming chamber; The surface of the particle collecting plate is formed with a first unevenness and a second unevenness, and the second unevenness is provided on the first unevenness and is finer than the first unevenness. 如申請專利範圍第1項所述之成膜裝置,其中,前述第一凹凸藉由第1加工形成,前述第二凹凸藉由在前述第1加工後實施之第2加工形成。 The film forming apparatus according to claim 1, wherein the first unevenness is formed by the first processing, and the second unevenness is formed by the second processing performed after the first processing. 如申請專利範圍第2項所述之成膜裝置,其中,前述第1加工為滾紋加工,前述第2加工為鼓風噴擊加工。 The film forming apparatus according to claim 2, wherein the first processing is embossing, and the second processing is blasting. 如申請專利範圍第3項所述之成膜裝置,其中,前述第一凹凸為藉由前述滾紋加工形成之斜紋。 The film forming apparatus according to claim 3, wherein the first unevenness is a twill formed by the embossing. 如申請專利範圍第4項所述之成膜裝置,其中,前述第一凹凸的間距為1.6mm,前述第一凹凸的槽的深度為0.7mm。 The film forming apparatus according to claim 4, wherein a pitch of the first unevenness is 1.6 mm, and a depth of the groove of the first unevenness is 0.7 mm. 如申請專利範圍第1至5項中任一項所述之成膜裝置,其中,在前述顆粒捕集板的與前述表面相反側的背面設置有冷卻板。 The film forming apparatus according to any one of claims 1 to 5, wherein a cooling plate is provided on a back surface of the particle collecting plate opposite to the surface. 如申請專利範圍第1至4項中任一項所述之成膜裝 置,其中,前述顆粒捕集板為銅製板。 The film-forming device according to any one of claims 1 to 4 The particle collecting plate is a copper plate. 如申請專利範圍第1至4項中任一項所述之成膜裝置,其中,前述顆粒捕集板的板厚為3mm。 The film forming apparatus according to any one of claims 1 to 4, wherein the particle collecting plate has a thickness of 3 mm. 如申請專利範圍第6項所述之成膜裝置,其中,前述冷卻板藉由螺樁及螺帽一體設置於前述顆粒捕集板。 The film forming apparatus according to claim 6, wherein the cooling plate is integrally provided to the particle collecting plate by a screw pile and a nut. 一種顆粒捕集板,配置於成膜裝置的成膜室內,其特徵為,在表面形成有第一凹凸和第二凹凸,該第二凹凸設置於前述第一凹凸上且比前述第一凹凸更微細。 A particle collecting plate disposed in a film forming chamber of a film forming apparatus, characterized in that a first unevenness and a second unevenness are formed on a surface, and the second unevenness is provided on the first unevenness and is more than the first unevenness Fine. 如申請專利範圍第10項所述之顆粒捕集板,其中,前述第一凹凸藉由第1加工形成,前述第二凹凸藉由前述第1加工後實施之第2加工形成。 The particle collecting plate according to claim 10, wherein the first unevenness is formed by the first processing, and the second unevenness is formed by the second processing performed after the first processing. 如申請專利範圍第11項所述之顆粒捕集板,其中,前述第1加工為滾紋加工,前述第2加工為鼓風噴擊加工。 The particle collecting plate according to claim 11, wherein the first processing is knurling, and the second processing is blasting. 如申請專利範圍第12項所述之顆粒捕集板,其中,前述第一凹凸的間距為1.6mm,前述第一凹凸的槽的深度為0.7mm。 The particle collecting plate according to claim 12, wherein a pitch of the first unevenness is 1.6 mm, and a depth of the groove of the first unevenness is 0.7 mm.
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