CN103184409A - A film forming apparatus and a particle capture board - Google Patents
A film forming apparatus and a particle capture board Download PDFInfo
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- CN103184409A CN103184409A CN2012104394450A CN201210439445A CN103184409A CN 103184409 A CN103184409 A CN 103184409A CN 2012104394450 A CN2012104394450 A CN 2012104394450A CN 201210439445 A CN201210439445 A CN 201210439445A CN 103184409 A CN103184409 A CN 103184409A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/01—Selective coating, e.g. pattern coating, without pre-treatment of the material to be coated
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a film-forming apparatus to effectively suppress the peeling of deposited film and a particle capture board. The film-forming apparatus (1) of the present invention has the particle capture board (30) arranged in a vacuum container, a first bump (32) and a second bump (34) are formed on the surface (30a) of the particle capture board (30), wherein the second bump is arranged on the first bump (32) and is smaller than the first bump (32). Thus, the peeling of the deposited film can be effectively suppressed.
Description
Technical field
The present invention relates to a kind of on by the film forming part with the film deposition system of film forming material film forming and be installed on the particle capture board of film deposition system.
Background technology
Forming ITO(Indium Tin Oxide: indium tin oxide) in the film deposition system of film such as film, sometimes film forming atom (film forming material) is attached to substrate etc. in filming chamber by on the inwall beyond the film forming part etc., the big particle that is known as particle is deposited in inwall.The film of this build-up of particles is peeled off from the inwall of filming chamber sometimes, its in filming chamber and substrate disperse and adhere to, cause into the problems such as reduction of film quality.
Therefore, in the film deposition system of for example patent documentation 1 record, in filming chamber, dispose shield member.This shield member is formed with the plasma spraying film that is made of aluminum or aluminum alloy on its surface, and the surface of plasma spraying film is by alligatoring.Thus, realize in shield member preventing that particle from peeling off.
And, for example in the film deposition system of patent documentation 2 record, possess the electrolytic copper foil of the embossing machined surface of Vickers' hardness 100～130Hv in the internal configuration of filming chamber, by preventing that electrolytic copper foil realizes that particle peels off.
Patent documentation 1: TOHKEMY 2008-291299 communique
Patent documentation 2: TOHKEMY 2001-234325 communique
Yet, in above-mentioned structure in the past, because the retentivity of the capturing function of film forming material and the accumulating film that build-up of particles forms is insufficient, must produce peeling off of accumulating film.Therefore, about peeling off of accumulating film, wish to have further improvement.
Summary of the invention
The present invention finishes in order to solve above-mentioned problem, and its purpose is to provide a kind of film deposition system of peeling off and particle capture board that can suppress accumulating film effectively.
People of the present invention repeat further investigation in order to solve above-mentioned problem, it found that and can be made as specific shape by the surface that film forming material is accompanying, catch effectively to obtain And and be held in mould material, thereby have finished the present invention.
Namely, the film deposition system that the present invention relates to possesses the filming chamber that carries out the film forming processing, this film forming is handled and is used on by the film forming part the film forming material film forming, it is characterized in that, possesses the particle capture board that is disposed in the filming chamber, be formed with first concavo-convexly and second concavo-convex on the surface of particle capture board, this second concavo-convexly is arranged at first concavo-convex go up and concavo-convex more small than the first.
In this film deposition system, be formed with first concavo-convex and first concavo-convex small second more concavo-convex than this on the surface of particle capture board.In the particle capture board, by first concavo-convex and second concavo-convexly come enlarged surface long-pending, therefore can guarantee the attachment surface of film forming material.And, can be captured as mould material effectively by the small second concavo-convex anchoring effect.And, can pile up and keep by the second concavo-convex film forming material of catching (particle) by concavo-convex ratio second concavo-convex bigger first is concavo-convex.Therefore, can catch and be held in mould material effectively.Its result can suppress peeling off of accumulating film effectively.
Be processed to form by the 1st first concavo-convex, by implement in the 1st processing back the 2nd be processed to form second concavo-convex.So, form and spread all over first concavo-convex whole second concavo-convex by implement the 2nd processing in the 1st processing back.
The 1st is processed as annular knurl processing, and the 2nd is processed as gas blowout processing.By use this working method, can distinguish form well first concavo-convex and second concavo-convex.
The first concavo-convex cross pattern for being processed to form by annular knurl.By with the first concavo-convex cross pattern that is made as, can enlarge the surface-area in the particle capture board, its result's second concavo-convex formation face also increases.Therefore, can further guarantee the face of catching of film forming material.And can be from the multi-direction mould material that is captured as by being made as cross pattern.
The first concavo-convex spacing is 1.6mm, and the degree of depth of the first concavo-convex groove is 0.7mm.Thus, can more appropriately keep the particle by second concavo-convex the catching/pile up, and more appropriately suppress peeling off of accumulating film.
The preferred particle capture board is copper plates.By using copper coin, can carry out the first concavo-convex and second concavo-convex processing well.
The thickness of slab of preferred particle capture board is 3mm.So, by thickness of slab is made as 3mm, can guarantee rigidity.Therefore, can be attached to removal (cleaning) operation of the film forming material of particle capture board well.
In addition, particle capture board of the present invention is the particle capture board that is disposed in the filming chamber of film deposition system, it is characterized in that, is formed with first concavo-convexly and second concavo-convex on the surface, and this second concavo-convexly is arranged at first concavo-convex go up and concavo-convex more small than the first.
In this particle capture board, be formed with first concavo-convex and first concavo-convex small second more concavo-convex than this.Thus, surface-area is concavo-convex and second concavo-convex the expansion by first, therefore guarantees the attachment surface of film forming material.In addition, by the small second concavo-convex anchoring effect, can be captured as mould material effectively.And, concavo-convex by concavo-convex ratio second concavo-convex bigger first, can pile up and keep by the second concavo-convex film forming material of catching (particle).Therefore, can catch and be held in mould material effectively.Its result can suppress peeling off of accumulating film.
In addition, in this particle capture board, the first concavo-convex spacing is 1.6mm, and the degree of depth of the first concavo-convex groove becomes 0.7mm.Thus, can more appropriately keep the particle by second concavo-convex the catching/pile up, and can more appropriately suppress peeling off of accumulating film.
The invention effect
According to the present invention, can suppress peeling off of accumulating film effectively.
Description of drawings
Fig. 1 is the figure of the structure of the related film deposition system of expression one embodiment.
Fig. 2 is the figure from transverse observation film deposition system shown in Figure 1.
Fig. 3 is the figure on the surface of expression particle capture board.
Fig. 4 is the sectional view that enlarges the surface of expression particle capture board shown in Figure 3.
Fig. 5 is the sectional view of the mounting structure of expression particle capture board and cooling plate.
Among the figure: 1-film deposition system, 3-vacuum vessel (filming chamber), 30-particle capture board, 30a-surface, the 30b-back side, 32-the 1st concavo-convex (first is concavo-convex), 34-the 2nd concavo-convex (second is concavo-convex), 40-cooling plate, 50-threaded stud, 52-bulb nut.
Embodiment
Below, with reference to the accompanying drawings, preferred embodiment describe of the present invention, in addition, in the description of the drawings identical or suitable member is added same-sign and omits repeat specification.
Fig. 1 is the figure of the structure of the related film deposition system of expression one embodiment.Fig. 2 is the figure from transverse observation film deposition system shown in Figure 1.Film deposition system 1 possesses: filming chamber is vacuum vessel 3; Plasma gun 5 is for supplying with the plasma source of plasma beam PB in vacuum vessel 3; Anode component 7, be disposed in the vacuum vessel 3 the bottom and by incident plasma beam PB; Transporting mechanism 10 is disposed at the top of vacuum vessel 3 and makes pallet T mobile above anode component 7.
At this, plasma gun 5 is the plasma gun of the pressure gradient type of generation plasma beam PB, disposes plasma beam PB to be guided to target 12, the target 14 of vacuum vessel 3 and turn to coil (omitting diagram) etc. between plasma gun 5 and vacuum vessel 3.And anode component 7 comprises: have the siege 16 of the siege main body 18 that the plasma beam PB from plasma gun 5 is guided to the below and accommodate film forming material and be disposed at the supplementary anode 20 of the ring-type around the siege.Transporting mechanism 10 possesses: a plurality of roller bearings 24, and it is arranged to horizontal direction in transmitting road 22; Drive unit omits diagram), make these roller bearings 24 rotate to make pallet T to move with constant speed with suitable speed.Transmit the well heater 26 that disposes glass substrate (by the film forming part) W in the road 22.
In this film deposition system 1, generation is discharged between the siege 16 in the negative electrode of plasma gun 5 (omitting diagram) and the vacuum vessel 3, generates plasma beam PB thus.This plasma body bundle PB is guided to by turning to the definite magnetic fields such as permanent magnet in coil or the supplementary anode 20 to arrive siege 16.Be contained in for example ITO(indium tin oxide of siege main body 18) etc. film forming material evaporate by plasma beam PB heating.The film forming material of this evaporation (evaporation particle) is ionized by plasma beam PB, is attached to the surface of the glass substrate W that the lower surface of the pallet T that moves with constant speed by transporting mechanism 10 exposes, forms the ITO(indium tin oxide at this) etc. tunicle.
In the vacuum vessel 3 of the film deposition system 1 with said structure, film forming material is attached to medial surface (inwall) and the particle (big particle) of vacuum vessel 3 and piles up.If this build-up of particles to a certain degree, then the particle that might pile up (film) is peeled off and is dispersed in vacuum vessel 3 and be attached to glass substrate W from the medial surface of vacuum vessel 3.Thus, produce the problem of polluting glass substrate W and quality decline.
Therefore, film deposition system 1 possesses the particle capture board 30 that is disposed in the vacuum vessel 3 is arranged.Particle capture board 30 is along the configuration of the medial surface of vacuum vessel 3 and have the function of catching and be held in mould material.Particle capture board 30 for example is the copper plates parts, and this thickness for example is about 3mm.Below, be elaborated with reference to Fig. 3 and the particle capture board 30 of Fig. 4.
Fig. 3 is the figure on the surface of expression particle capture board.Fig. 4 is the sectional view that amplifies the surface of expression particle capture board shown in Figure 3.
As shown in Figures 3 and 4, the surperficial 30a of particle capture board 30 is formed with the 1st concavo-convex (first is concavo-convex) 32 and the 2nd concavo-convex (second is concavo-convex) 34.The the 1st concavo-convex 32 cross pattern for the embossing that is processed to form by annular knurl.Embossing (English name: Knurling) by JIS B 0951 regulation.
The cross section of the 1st concavo-convex 32 convex portion is roughly chevron.In other words, the 1st concavo-convex 32 is made of groove and the top that links between the groove of adjacency.The the 1st concavo-convex 32 spacing t for example is 1.6mm.The degree of depth of the 1st concavo-convex 32 groove (from the bottom to the height at top) h for example is 0.7mm.The the 1st concavo-convex 32 groove is V font roughly, on one side the angle of intersecting with the other side for example be 90 to spend.The the 1st concavo-convex 32 for example flattens copper coin surface and makes its viscous deformation by knurling tool is pressed on the copper coin, or forms by cutting copper coin surface.In addition, spacing t, one side of degree of depth h and groove is not limited to above-mentioned numerical value with the angle that the other side intersects, and can have a little to float by above-mentioned relatively numerical value, also can be other numerical value.
The the 2nd concavo-convex 34 is formed on the 1st concavo-convex 32.The the 2nd concavo-convex 34 is small concavo-convex for what be processed to form by gas blowout, compares concavo-convex very little with the 1st concavo-convex 32.Be processed to form after the 1st concavo-convex 32 by annular knurl, form the 2nd concavo-convex 34 by gas blowout processing on the 1st concavo-convex 32 surface.That is, the 1st concavo-convex 32 surface (the surperficial 30a of particle capture board 30) becomes pears ground.
Preference is that projectile (for example aluminum oxide) about 300～355 μ m collides and to form the 2nd concavo-convexly 34 as making particle diameter, and preferred center line mean roughness Rz for example is about 20～40 μ m.
The back side 30b of the opposition side of the surperficial 30a of particle capture board 30 becomes glossy surface (green surface).30b is provided with cooling plate 40 at this back side.Cooling plate 40 is disposed in vacuum vessel 3 between the medial surface and particle capture board 30 of vacuum vessel 3 for for example thickness is plate-shaped member about 5mm.
When particle capture board 30 is installed cooling plates 40, with cooling plate 40, particle capture board 30, the order assembling of pressing packing ring 54 and bulb nut 52, bulb nut 52 usefulness spanners are anchored on threaded stud from the relative threaded stud 50 of the medial surface side of vacuum vessel 3.In addition, threaded stud 50 is provided with nut 56, and nut 56 is equipped with insists with set screw 58.
As shown in Figures 1 and 2, be provided with the cooling tube 42 that makes refrigerant (water) circulation at cooling plate 40.Cooling tube 42 is disposed at the another side 40b side of cooling plate 40.Cooling tube 42 spreads all over whole of cooling plate 40 and disposes.Constitute cooling body by cooling plate 40 and cooling tube 42.
As above explanation in the present embodiment, is disposed particle capture board 30 in the vacuum vessel 3.Be formed with the the the 1st concavo-convex 32 and the 2nd the concavo-convex the 34, the described the 2nd concavo-convex more small than the 1st concavo-convex 32 on the surperficial 30a of particle capture board 30.In the particle capture board 30, surface-area is enlarged by the the 1st concavo-convex 32 and the 2nd concavo-convex 34, guaranteed the attachment surface of film forming material.And the anchoring effect by the small the 2nd concavo-convex 34 can be captured as mould material effectively.And, can be by the 1st concavo-convex 32 bigger particle of piling up and keeping catching by the 2nd concavo-convex 34 of concavo-convex ratio the 2nd concavo-convex 34.Therefore, can catch and be held in mould material effectively.Its result can suppress peeling off of accumulating film effectively.
In addition, particle capture board 30 its thickness are about 3mm, therefore can guarantee rigidity.Therefore, can carry out the removal operation of dirt settling well.And, in the particle capture board 30, be formed with degree of depth h and be the 1st concavo-convex 32 about 0.7mm, when therefore regenerating as long as form the 2nd concavo-convex 34 in the 1st concavo-convex 32 enterprising promoting the circulation of qi spray processing.Therefore, can carry out regenerative operation simply.Its result can realize the raising of operability and the reduction of cost.
In addition, because therefore the 1st concavo-convex 32 cross pattern for being processed to form by annular knurl can realize that surface-area enlarges, and compare with the situation that forms hole (plain weave) along a direction, can be from the multi-direction mould material that is captured as.Therefore, can be embodied as the raising of catching property of mould material.
In addition, if the 1st concavo-convex 32 spacing t is 1.6mm, the degree of depth h of the first concavo-convex groove is 0.7mm, then can more appropriately keep the particle of catching/piling up by the 2nd concavo-convex 34, can more appropriately suppress peeling off of accumulating film.
In addition, owing to be wholely set particle capture board 30 and cooling plate 40, therefore can itself add refrigerating function at particle capture board 30.Therefore, can realize cooling body structure simplification so that be embodied as the simplification of the structure of film device 1.
In addition; because particle capture board 30 is installed by threaded stud 50 and bulb nut 52 with cooling plate 40; therefore even be under the thinner situation (for example about 5mm) of the thickness of slab of cooling plate 40; also can protect the mounting screw of cooling plate 40, can firmly fix particle capture board 30 and cooling plate 40.
The present invention is not limited to above-mentioned embodiment.For example, in the above-described embodiment, be processed to form the 1st concavo-convexly 32 by annular knurl, be processed to form the 2nd concavo-convexly 34 by gas blowout, but the the 1st concavo-convex 32 and the 2nd concavo-convex 34 can form by other working methods.
In addition, in the above-mentioned embodiment, particle capture board 30 is disposed at the structure of carrying out the film deposition system 1 that film forming handles by the ion plating of using plasma body is illustrated, but particle capture board 30 is also configurable in carry out the device that film forming is handled by sputter etc.
In addition, be wholely set cooling plate 40 with particle capture board 30 in the above-mentioned embodiment, but can cooling plate 40 be set according to the temperature environment of vacuum vessel 3 in the film deposition system 1.
In addition, in the above-mentioned embodiment particle capture board 30 is made as the copper plates parts, but particle capture board 30 can be made of other materials.From the viewpoint of processing simplification, preferred particle capture board 30 is copper plates.
Then, in the above-mentioned embodiment, be illustrated also be provided with the small the 2nd concavo-convex 34 form at the 1st concavo-convex 32 recess, but can not arrange the 2nd concavo-convex 34 at the 1st concavo-convex 32 recess.In particle capture board 30, when making the small the 2nd concavo-convex 34 mainly to hold the function that is captured as mould material, and when the 1st concavo-convex 32 recess mainly being held keep the function of the film forming material of piling up, do not form the 2nd concavo-convex 34 at the 1st concavo-convex 32 recess as described above can suppress peeling off of accumulating film effectively even be not yet.
Claims (13)
1. film deposition system, it possesses and carries out the filming chamber that film forming is handled, and this film forming is handled and is used on by the film forming part film forming material film forming be is characterized in that,
Possess the particle capture board that is disposed in the described filming chamber,
Be formed with first concavo-convexly and second concavo-convex on the surface of described particle capture board, this second concavo-convexly is arranged at described first concavo-convex go up and concavo-convex more small than described first.
2. film deposition system as claimed in claim 1 is characterized in that,
Be processed to form by the 1st described first concavo-convex,
Concavo-convex by be processed to form the described the 2nd in the 2nd of described the 1st processing back enforcement.
3. film deposition system as claimed in claim 2 is characterized in that,
The described the 1st is processed as annular knurl processing,
The described the 2nd is processed as gas blowout processing.
4. film deposition system as claimed in claim 3 is characterized in that,
The described first concavo-convex cross pattern for being processed to form by described annular knurl.
5. film deposition system as claimed in claim 4 is characterized in that,
The described first concavo-convex spacing is 1.6mm,
The degree of depth of the described first concavo-convex groove is 0.7mm.
6. as each described film deposition system in the claim 1～5, it is characterized in that,
The back side at the opposition side on the described surface of described particle capture board is provided with cooling plate.
7. as each described film deposition system in the claim 1～4, it is characterized in that,
Described particle capture board is copper plates.
8. as each described film deposition system in the claim 1～4, it is characterized in that,
The thickness of slab of described particle capture board is 3mm.
9. film deposition system as claimed in claim 6 is characterized in that,
Described cooling plate is integrally formed at described particle capture board by threaded stud and nut.
10. a particle capture board is disposed in the filming chamber of film deposition system, it is characterized in that,
Be formed with first concavo-convexly and second concavo-convex from the teeth outwards, this second concavo-convexly is arranged at described first concavo-convex go up and concavo-convex more small than described first.
11. particle capture board as claimed in claim 10 is characterized in that,
Be processed to form by the 1st described first concavo-convex,
By described the 1st processing back implement the 2nd be processed to form described second concavo-convex.
12. particle capture board as claimed in claim 11 is characterized in that,
The described the 1st is processed as annular knurl processing,
The described the 2nd is processed as gas blowout processing.
13. particle capture board as claimed in claim 12 is characterized in that,
The described first concavo-convex spacing is 1.6mm,
The degree of depth of the described first concavo-convex groove is 0.7mm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011285869A JP2013133522A (en) | 2011-12-27 | 2011-12-27 | Film deposition apparatus and particle capturing plate |
| JP2011-285869 | 2011-12-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103184409A true CN103184409A (en) | 2013-07-03 |
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ID=48675852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104394450A Pending CN103184409A (en) | 2011-12-27 | 2012-11-06 | A film forming apparatus and a particle capture board |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2013133522A (en) |
| KR (1) | KR20130075639A (en) |
| CN (1) | CN103184409A (en) |
| TW (1) | TWI475123B (en) |
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| CN110225996A (en) * | 2017-01-20 | 2019-09-10 | 霍尼韦尔国际公司 | For sputtering the grain catcher and its manufacturing method of coil |
| CN110241390A (en) * | 2018-03-07 | 2019-09-17 | 夏普株式会社 | Film formation device |
| US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI671430B (en) * | 2017-12-15 | 2019-09-11 | 日商住友重機械工業股份有限公司 | Film forming device |
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| JP4999264B2 (en) * | 2004-08-24 | 2012-08-15 | 株式会社ネオス | Thin film manufacturing apparatus and manufacturing method thereof |
| TW200837807A (en) * | 2007-03-07 | 2008-09-16 | Chi Mei Optoelectronics Corp | Physical vapor deposition apparatus and chamber deposit-resisting assembly thereof |
| TWM321903U (en) * | 2007-03-09 | 2007-11-11 | Taiwan Sputtering Prec Machine | Cooling device of sputter |
| JP5283880B2 (en) * | 2007-10-01 | 2013-09-04 | 株式会社東芝 | Vacuum deposition system |
| CN102011085B (en) * | 2010-10-29 | 2013-05-01 | 宁波江丰电子材料有限公司 | Method for processing surface of attachment-resisting plate |
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- 2011-12-27 JP JP2011285869A patent/JP2013133522A/en active Pending
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- 2012-09-07 TW TW101132733A patent/TWI475123B/en active
- 2012-11-06 CN CN2012104394450A patent/CN103184409A/en active Pending
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| JPH08277460A (en) * | 1995-04-06 | 1996-10-22 | Ulvac Japan Ltd | Parts constituting film forming device and their production |
| CN101050519A (en) * | 2006-04-05 | 2007-10-10 | 精工爱普生株式会社 | Evaporation apparatus, evaporation method, method of manufacturing electro-optical device, and film-forming apparatus |
| JP2009097063A (en) * | 2007-10-19 | 2009-05-07 | Toppan Printing Co Ltd | Vacuum deposition system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110225996A (en) * | 2017-01-20 | 2019-09-10 | 霍尼韦尔国际公司 | For sputtering the grain catcher and its manufacturing method of coil |
| US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
| CN110241390A (en) * | 2018-03-07 | 2019-09-17 | 夏普株式会社 | Film formation device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI475123B (en) | 2015-03-01 |
| KR20130075639A (en) | 2013-07-05 |
| JP2013133522A (en) | 2013-07-08 |
| TW201346048A (en) | 2013-11-16 |
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Application publication date: 20130703 |