CN214271030U - Wafer deposition cover ring - Google Patents
Wafer deposition cover ring Download PDFInfo
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- CN214271030U CN214271030U CN202022403622.2U CN202022403622U CN214271030U CN 214271030 U CN214271030 U CN 214271030U CN 202022403622 U CN202022403622 U CN 202022403622U CN 214271030 U CN214271030 U CN 214271030U
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Abstract
The utility model provides a wafer deposit covers ring, wafer deposit covers ring presents closed cyclic annular, inner peripheral surface, upper surface and the outer peripheral face that wafer deposit covered ring all cover and have the stratum granulosum, the stratum granulosum outside covers there is the knurling layer. Wafer deposit covers the ring through on the basis of grained layer, further increases the design on knurling layer, has increased the adsorption efficiency of wafer deposit cover ring effectively, not only can prevent to sputter the problem that the target atom got off drops on the wafer, and then avoids the wafer to produce the problem of skinning or unusual discharge phenomenon, prevents that the wafer from scrapping, can also effectively prevent to sputter the target atom that gets off and drop and lead to the cavity to be contaminated in the physical vapor deposition cavity.
Description
Technical Field
The utility model belongs to the technical field of wafer deposit coating film, concretely relates to wafer deposit cover ring.
Background
The physical vapor deposition technique means a technique of vaporizing a solid or liquid surface as a material source into gaseous atoms, molecules, or partially ionized into ions by a physical method under a vacuum condition, and depositing a thin film having a certain specific function on the surface of a substrate by a low-pressure gas (or plasma) process.
In the semiconductor manufacturing process, it is often necessary to use a physical vapor deposition apparatus to deposit a thin film on the surface of a wafer or a device, and the main physical vapor deposition techniques include evaporation and sputtering, in which the former is to heat an object to be evaporated and deposit a film by using the saturated vapor pressure of the object to be evaporated at a high temperature, and the latter is to use ions generated by plasma to bombard the electrode of the object to be sputtered by using ions so as to make the plasma gas phase have particles of the object to be plated, and then to deposit the particles.
In the process of processing the wafer by adopting the physical vapor deposition equipment, the wafer is placed on the bearing seat, and then the physical vapor deposition operation is carried out on the wafer. However, since the deposition material is not only attached to the wafer during the deposition process, but also attached to the portion of the susceptor that is not covered by the wafer. After long-term wafer processing, the deposit will accumulate a certain thickness on the bearing seat, which will affect the placement of the wafer, so that the bearing wafer is easy to move, resulting in the uniformity of the physical vapor deposition coating. Therefore, wafer processing must be suspended at intervals to clean deposits from the susceptor, resulting in limited throughput.
In order to protect the susceptor, a deposition cover ring is disposed on the susceptor of the prior art to cover the portion of the susceptor not covered by the wafer. In the physical vapor deposition process, the deposition covering ring can not only cover the bearing seat, but also cover the wafer and be used for adsorbing target material atoms knocked down by sputtering target materials at the upper end, so that particles generated in the cavity during sputtering are prevented. The prior art generally increases the surface roughness of the deposition covering ring by means of sand blasting or meltallizing, thereby increasing the adsorption capacity of target atoms knocked down by the sputtering target at the upper end.
However, the adsorption capacity of the deposition covering ring is improved only by sandblasting or meltallizing, which still causes the problem that sputtered target material atoms fall onto the wafer due to insufficient adsorption capacity, and further causes peeling or abnormal discharge of the wafer, even the wafer is scrapped, or the wafer falls into the physical vapor deposition chamber, and the chamber is polluted.
In summary, there is a need to develop a novel wafer deposition cover ring, which can further improve the adsorption capacity of the wafer deposition cover ring and reduce the risk of wafer scrapping and physical vapor deposition chamber contamination caused by the falling of sputtered target atoms.
SUMMERY OF THE UTILITY MODEL
Not enough to prior art exists, the utility model aims to provide a wafer deposit covers ring, wafer deposit covers ring is through on the basis of grained layer, further increases the design on knurling layer, has increased the adsorption efficiency of wafer deposit cover ring effectively, has reduced because the target atom that the sputtering got off drops and leads to the wafer to scrap and the contaminated risk of physical vapor deposition cavity.
To achieve the purpose, the utility model adopts the following technical proposal:
an object of the utility model is to provide a wafer deposit covers ring, wafer deposit covers ring presents closed cyclic annular, inner peripheral surface, upper surface and the outer peripheral face that wafer deposit covered ring all cover and have the grained layer, the grained layer outside covers has the knurling layer.
Wafer deposit covers the ring through on the basis of grained layer, further increases the design on knurling layer, has increased the adsorption efficiency of wafer deposit cover ring effectively, not only can prevent to sputter the problem that the target atom got off drops on the wafer, and then avoids the wafer to produce the problem of skinning or unusual discharge phenomenon, prevents that the wafer from scrapping, can also effectively prevent to sputter the target atom that gets off and drop and lead to the cavity to be contaminated in the physical vapor deposition cavity.
It is worth mentioning that, in actual physical vapor deposition process, the target atom that upper end sputter target was beaten down is often directly accepted to inner peripheral surface, upper surface and the outer peripheral face of wafer deposit cover ring, so covers in proper order has grained layer and knurling layer, but the grained layer with the downside that the ring was covered in wafer deposit can also be further covered in the knurling layer to further increase the adsorption efficiency of wafer deposit cover ring, further reduce because the target atom that sputter down drops and lead to the wafer to scrap and the contaminated risk of physical vapor deposition cavity.
Following conduct the utility model discloses preferred technical scheme, nevertheless do not conduct the utility model provides a technical scheme's restriction, through following technical scheme, can reach and realize better the utility model discloses a technical purpose and beneficial effect.
In a preferred embodiment of the present invention, the knurled layer is a diamond-shaped knurled layer, and the side length of the diamond in the diamond-shaped knurled layer is 0.5-1.5mm, such as 0.5mm, 0.6mm, 0.8mm, 1mm, 1.2mm, 1.3mm, or 1.5mm, but not limited to the above-mentioned values, and other values not listed in the above-mentioned value range are also applicable.
In a preferred embodiment of the present invention, the knurl depth of the knurl layer is 0.3-0.6mm, for example, 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm, or 0.6mm, but the present invention is not limited to the above-mentioned values, and other values not shown in the above-mentioned range of values are also applicable.
Rhombus knurling layer is 0.5-1.5mm through the length of side of restriction rhombus, and the annular knurl degree of depth is 0.3-0.6mm, can increase the roughness that the wafer deposit covered the ring effectively, has further improved the adsorption efficiency that the wafer deposit covered the ring.
As a preferred embodiment of the present invention, the particle layer is formed by sandblasting or meltblowing.
The sand blasting is a process of cleaning and coarsening the surface of a base body by utilizing the impact of high-speed sand flow. Compressed air is used as power to form a high-speed spray beam, spray materials are sprayed to the surface of a workpiece to be processed at a high speed, the appearance or the shape of the outer surface of the workpiece is changed, and the surface of the workpiece obtains certain cleanliness and different roughness due to the impact and the cutting action of abrasive materials on the surface of the workpiece.
The meltallizing refers to aluminium meltallizing, adopts professional equipment to melt the aluminium stove promptly and melts the back to aluminium, sprays at the substrate surface formation aluminium membrane with the constant speed to can improve the roughness of substrate.
Sandblast and meltallizing are prior art, and no longer give unnecessary details here.
In a preferred embodiment of the invention, the particle layer has a thickness of 1 to 3mm, for example 1mm, 1.5mm, 2mm, 2.5mm or 3mm, but not limited to the values listed, and other values not listed within this range of values are equally applicable.
As a preferred embodiment of the present invention, the wafer deposition cover ring includes an outer ring cover, the outer ring cover is located on the lower side surface of the wafer deposition cover ring, and from the peripheral edge of the lower side surface extends downward.
The outer ring cover can effectively protect the side surface of the wafer, thereby preventing the sputtering target material at the upper end from being deposited on the side surface of the wafer.
As the utility model discloses preferred technical scheme, the outer loop cover includes heat radiation structure, heat radiation structure is located the medial surface of outer loop cover.
As the utility model discloses preferred technical scheme, heat radiation structure is 2 at least slots, the slot is parallel to each other and the interval sets up, moreover encircle in the medial surface of outer ring cover.
Heat radiation structure is 2 at least slots, can increase the surface area that the wafer deposit covers the ring to can improve the radiating efficiency that the wafer deposit covers the ring.
As the utility model discloses preferred technical scheme, wafer deposit covers the ring and includes the inner ring cover, the inner ring cover is located the downside of wafer deposit covers the ring, and certainly the middle part downwardly extending of downside, moreover the inner ring cover is located the inboard of outer ring cover.
The inner ring cover with formed the crack between the outer ring cover, can realize firmly blocking to bearing of supporting the wafer and put to further prevent that wafer deposit from covering the condition that the ring takes place to shift.
As the utility model discloses preferred technical scheme, wafer deposit covers the ring and includes the downside recess, the downside recess is located the downside of wafer deposit covers the ring, and the downside recess is located the inboard of inner ring cover.
Compared with the prior art, the beneficial effects of the utility model are that:
wafer deposit covers the ring through on the basis of grained layer, further increases the design on knurling layer, has increased the adsorption efficiency of wafer deposit cover ring effectively, not only can prevent to sputter the problem that the target atom got off drops on the wafer, and then avoids the wafer to produce the problem of skinning or unusual discharge phenomenon, prevents that the wafer from scrapping, can also effectively prevent to sputter the target atom that gets off and drop and lead to the cavity to be contaminated in the physical vapor deposition cavity.
Drawings
FIG. 1 is a top view of a wafer deposition cover ring (from the underside) according to the present invention;
FIG. 2 is a schematic cross-sectional view taken along line A-A of FIG. 1;
wherein, 1-inner peripheral surface; 2-upper surface; 3-outer peripheral surface; 4-the lower side; 21-a particulate layer; 22-knurling layer; 10-outer ring cover; 20-a heat dissipation structure; 30-an inner ring cover; 40-lower side recesses.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, back, inside, outside, etc.) are involved in the embodiments of the present invention, the directional indications are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed accordingly.
The following are typical but non-limiting examples of the present invention:
as shown in fig. 1 and fig. 2, the wafer deposition cover ring of the present invention is in a closed ring shape, the inner circumferential surface 1, the upper surface 2 and the outer circumferential surface 3 of the wafer deposition cover ring are covered with a particle layer 21, and the outer side of the particle layer 21 is covered with a knurled layer 22;
the wafer deposition covering ring comprises an outer ring cover 10, wherein the outer ring cover 10 is positioned on the lower side surface 4 of the wafer deposition covering ring and extends downwards from the peripheral edge of the lower side surface 4;
the outer ring cover 10 comprises a heat dissipation structure 20, and the heat dissipation structure 20 is located on the inner side surface of the outer ring cover 10;
the heat dissipation structure 20 is at least 2 grooves which are parallel to each other and spaced apart from each other, and which surround the inner side surface of the outer ring cover 10;
the wafer deposition covering ring comprises an inner ring cover 30, the inner ring cover 30 is positioned on the lower side surface 4 of the wafer deposition covering ring and extends downwards from the middle part of the lower side surface 4, and the inner ring cover 30 is positioned on the inner side of the outer ring cover 10;
the wafer deposition cover ring includes a lower side recess 40, the lower side recess 40 is located at the lower side 4 of the wafer deposition cover ring, and the lower side recess 40 is located at the inner side of the inner ring cover 30.
Example 1
The embodiment provides a wafer deposition cover ring, which is in a closed ring shape, wherein the inner circumferential surface 1, the upper surface 2 and the outer circumferential surface 3 of the wafer deposition cover ring are all covered with a granular layer 21, and the outer side of the granular layer 21 is covered with a knurled layer 22;
the knurling layer 22 is a rhombic knurling layer, the side length of a rhombus in the rhombic knurling layer is 1mm, and the knurling depth of the knurling layer 22 is 0.5 mm;
the particle layer 21 is formed by sand blasting or fusion jetting, and the thickness of the particle layer 21 is 2 mm;
the wafer deposition covering ring comprises an outer ring cover 10, wherein the outer ring cover 10 is positioned on the lower side surface 4 of the wafer deposition covering ring and extends downwards from the peripheral edge of the lower side surface 4;
the outer ring cover 10 comprises a heat dissipation structure 20, and the heat dissipation structure 20 is located on the inner side surface of the outer ring cover 10;
the heat dissipation structure 20 is provided with 3 grooves which are parallel to each other and arranged at intervals and surround the inner side surface of the outer ring cover 10;
the wafer deposition covering ring comprises an inner ring cover 30, the inner ring cover 30 is positioned on the lower side surface 4 of the wafer deposition covering ring and extends downwards from the middle part of the lower side surface 4, and the inner ring cover 30 is positioned on the inner side of the outer ring cover 10;
the wafer deposition cover ring includes a lower side recess 40, the lower side recess 40 is located at the lower side 4 of the wafer deposition cover ring, and the lower side recess 40 is located at the inner side of the inner ring cover 30.
The wafer deposition cover ring of the embodiment effectively increases the adsorption capacity of the wafer deposition cover ring by adding the design of the knurled layer 22, and basically, the accidents of wafer scrapping and physical vapor deposition chamber pollution caused by falling of sputtered target material atoms do not occur.
Example 2
The embodiment provides a wafer deposition cover ring, which is in a closed ring shape, wherein the inner circumferential surface 1, the upper surface 2 and the outer circumferential surface 3 of the wafer deposition cover ring are all covered with a granular layer 21, and the outer side of the granular layer 21 is covered with a knurled layer 22;
the knurling layer 22 is a rhombic knurling layer, the side length of a rhombus in the rhombic knurling layer is 0.5mm, and the knurling depth of the knurling layer 22 is 0.6 mm;
the particle layer 21 is formed by sand blasting or fusion jetting, and the thickness of the particle layer 21 is 3 mm;
the wafer deposition covering ring comprises an outer ring cover 10, wherein the outer ring cover 10 is positioned on the lower side surface 4 of the wafer deposition covering ring and extends downwards from the peripheral edge of the lower side surface 4;
the outer ring cover 10 comprises a heat dissipation structure 20, and the heat dissipation structure 20 is located on the inner side surface of the outer ring cover 10;
the heat dissipation structure 20 is provided with 3 grooves which are parallel to each other and arranged at intervals and surround the inner side surface of the outer ring cover 10;
the wafer deposition covering ring comprises an inner ring cover 30, the inner ring cover 30 is positioned on the lower side surface 4 of the wafer deposition covering ring and extends downwards from the middle part of the lower side surface 4, and the inner ring cover 30 is positioned on the inner side of the outer ring cover 10;
the wafer deposition cover ring includes a lower side recess 40, the lower side recess 40 is located at the lower side 4 of the wafer deposition cover ring, and the lower side recess 40 is located at the inner side of the inner ring cover 30.
The wafer deposition cover ring of the embodiment effectively increases the adsorption capacity of the wafer deposition cover ring by adding the design of the knurled layer 22, and basically, the accidents of wafer scrapping and physical vapor deposition chamber pollution caused by falling of sputtered target material atoms do not occur.
Example 3
The embodiment provides a wafer deposition cover ring, which is in a closed ring shape, wherein the inner circumferential surface 1, the upper surface 2 and the outer circumferential surface 3 of the wafer deposition cover ring are all covered with a granular layer 21, and the outer side of the granular layer 21 is covered with a knurled layer 22;
the knurling layer 22 is a diamond knurling layer, the side length of a diamond in the diamond knurling layer is 1.5mm, and the knurling depth of the knurling layer 22 is 0.3 mm;
the particle layer 21 is formed by sand blasting or fusion jetting, and the thickness of the particle layer 21 is 1 mm;
the wafer deposition covering ring comprises an outer ring cover 10, wherein the outer ring cover 10 is positioned on the lower side surface 4 of the wafer deposition covering ring and extends downwards from the peripheral edge of the lower side surface 4;
the outer ring cover 10 comprises a heat dissipation structure 20, and the heat dissipation structure 20 is located on the inner side surface of the outer ring cover 10;
the heat dissipation structure 20 is provided with 3 grooves which are parallel to each other and arranged at intervals and surround the inner side surface of the outer ring cover 10;
the wafer deposition covering ring comprises an inner ring cover 30, the inner ring cover 30 is positioned on the lower side surface 4 of the wafer deposition covering ring and extends downwards from the middle part of the lower side surface 4, and the inner ring cover 30 is positioned on the inner side of the outer ring cover 10;
the wafer deposition cover ring includes a lower side recess 40, the lower side recess 40 is located at the lower side 4 of the wafer deposition cover ring, and the lower side recess 40 is located at the inner side of the inner ring cover 30.
The wafer deposition cover ring of the embodiment effectively increases the adsorption capacity of the wafer deposition cover ring by adding the design of the knurled layer 22, and basically, the accidents of wafer scrapping and physical vapor deposition chamber pollution caused by falling of sputtered target material atoms do not occur.
Comparative example 1
This comparative example provides a wafer deposition cover ring, the conditions being identical to those of example 1 except that the knurled layer 22 was omitted.
In the comparative example, the knurled layer 22 is omitted, the adsorption capacity of the particle layer 21 is limited, and the accidents of wafer scrapping and physical vapor deposition chamber pollution caused by falling of sputtered target atoms occasionally occur, so that certain economic loss is caused.
To sum up, wafer deposit covers the ring through on the basis of grained layer, further increases the design on knurling layer, has increased the adsorption efficiency that wafer deposit covers the ring effectively, not only can prevent to sputter the problem that the target atom got off drops on the wafer, and then avoids the wafer to produce the problem of skinning or unusual discharge phenomenon, prevents that the wafer from scrapping, can also effectively prevent to sputter the target atom that gets off and drop and lead to the cavity to be contaminated in the physical vapor deposition cavity.
The applicant states that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and those skilled in the art should understand that any changes or substitutions easily conceivable by those skilled in the art within the technical scope of the present invention are within the protection scope and the disclosure scope of the present invention.
Claims (7)
1. The wafer deposition covering ring is characterized in that the wafer deposition covering ring is in a closed ring shape, particle layers are covered on the inner circumferential surface, the upper surface and the outer circumferential surface of the wafer deposition covering ring, a knurling layer covers the outer side of the particle layers, the knurling layer is a diamond knurling layer, the side length of a diamond in the diamond knurling layer is 0.5-1.5mm, and the knurling depth of the knurling layer is 0.3-0.6 mm.
2. The wafer deposition cover ring of claim 1, wherein the particle layer has a thickness of 1-3 mm.
3. The deposition cover ring of claim 1, wherein the deposition cover ring includes an outer ring shield positioned on an underside of the deposition cover ring and extending downwardly from a peripheral edge of the underside.
4. The wafer deposition cover ring of claim 3, wherein the outer ring shield comprises a heat sink structure located on an inner side of the outer ring shield.
5. The wafer deposition cover ring of claim 4, wherein the heat sink structure is at least 2 grooves, the grooves being parallel to and spaced apart from each other and surrounding an inner side of the outer ring shield.
6. The deposition cover ring of claim 3, wherein the deposition cover ring comprises an inner ring shield positioned on the underside of the deposition cover ring and extending downward from a middle of the underside, and wherein the inner ring shield is positioned inside the outer ring shield.
7. The wafer deposition cover ring of claim 6, wherein the wafer deposition cover ring includes an underside recess located on an underside of the wafer deposition cover ring and the underside recess is located inside the inner ring shield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022403622.2U CN214271030U (en) | 2020-10-26 | 2020-10-26 | Wafer deposition cover ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022403622.2U CN214271030U (en) | 2020-10-26 | 2020-10-26 | Wafer deposition cover ring |
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| Publication Number | Publication Date |
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| CN214271030U true CN214271030U (en) | 2021-09-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022403622.2U Active CN214271030U (en) | 2020-10-26 | 2020-10-26 | Wafer deposition cover ring |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114763602A (en) * | 2021-01-13 | 2022-07-19 | 台湾积体电路制造股份有限公司 | Wafer processing apparatus and method of manufacturing semiconductor device |
| CN116288182A (en) * | 2022-11-25 | 2023-06-23 | 宁波江丰电子材料股份有限公司 | Protective ring for sputtering and application thereof |
-
2020
- 2020-10-26 CN CN202022403622.2U patent/CN214271030U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114763602A (en) * | 2021-01-13 | 2022-07-19 | 台湾积体电路制造股份有限公司 | Wafer processing apparatus and method of manufacturing semiconductor device |
| CN116288182A (en) * | 2022-11-25 | 2023-06-23 | 宁波江丰电子材料股份有限公司 | Protective ring for sputtering and application thereof |
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