CN220952025U - Deposition ring and thin film deposition apparatus - Google Patents
Deposition ring and thin film deposition apparatus Download PDFInfo
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- CN220952025U CN220952025U CN202322602796.5U CN202322602796U CN220952025U CN 220952025 U CN220952025 U CN 220952025U CN 202322602796 U CN202322602796 U CN 202322602796U CN 220952025 U CN220952025 U CN 220952025U
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- ring
- deposition
- deposition ring
- thin film
- annular portion
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- 238000000151 deposition Methods 0.000 title claims abstract description 119
- 230000008021 deposition Effects 0.000 title claims abstract description 118
- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 23
- 238000000576 coating method Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims 2
- 230000006872 improvement Effects 0.000 abstract description 3
- 239000002245 particle Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 235000019592 roughness Nutrition 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The utility model provides a deposition ring and a thin film deposition apparatus. The deposition ring comprises an annular main body and more than two columnar structures, the annular main body is provided with a first surface and a second surface which are opposite, the roughness of the first surface is larger than that of the second surface, the more than two columnar structures are arranged on the same circumferential surface of the second surface at intervals, and the diameter of the circumferential surface is larger than that of a carrying platform to be matched. According to the deposition ring provided by the utility model, the columnar structure is arranged on one surface, so that the rough surface and the smooth surface of the deposition ring can be obviously distinguished visually, and the protection ring cannot be normally assembled when the deposition ring is reversely assembled, so that the phenomenon of reverse assembly of the deposition ring is avoided during operation, and the improvement of the operation yield is facilitated.
Description
Technical Field
The utility model relates to the technical field of semiconductor manufacturing, in particular to semiconductor equipment, and especially relates to a deposition ring and film deposition equipment.
Background
Physical vapor deposition (Physical Vapor Deposition, PVD) techniques are often referred to as vacuum coating techniques. It refers to a technology of gasifying solid or liquid material sources into gaseous atoms or molecules by adopting a physical method under vacuum condition, or partially ionizing the solid or liquid material sources into ions and then conveying the ions to the surface of a substrate to be deposited so as to deposit a film with a certain special function on the surface of the substrate.
The existing vacuum coating technology mainly comprises vacuum evaporation coating, vacuum sputtering coating and vacuum ion coating. Wherein, vacuum sputtering coating refers to a technology of bombarding the surface of a target material with energetic particles in vacuum so as to deposit the bombarded particles on a substrate. Generally, low pressure inert gas glow discharge is used to generate incident ions during vacuum sputter coating. The cathode target is made of film coating material, the substrate is used as anode, argon gas or other inert gas of 0.1-10Pa is introduced into the vacuum chamber, and glow discharge is generated under the action of negative high voltage of 1-3KV DC or radio frequency voltage of 13.56 MHz. The ionized argon ions bombard the target surface, so that the target atoms are sputtered and deposited on the substrate to form a thin film.
The main deposition components in the existing sputter coating cavity comprise a carrier, a deposition ring and a protection ring. The carrier is used for carrying the substrate to be deposited; the deposition ring is positioned on the carrier and arranged on the periphery of the substrate in a surrounding manner so as to prevent the thin film deposited on the surface of the carrier in the sputtering coating process from causing short circuit to cause failure; the protection ring is arranged above the circumference of the deposition ring and extends downwards, and is used for preventing the chamber from being polluted by the coating film in the coating process. Wherein, the upward surface of the deposition ring is a rough surface to enhance the adsorption capacity of the deposition ring, prevent the ions and the films adsorbed on the surface from falling off to pollute the substrate and the carrier, and the other surface is a relative smooth surface to reduce the friction with the carrier. However, in the prior art, the front and back sides of the deposition ring have no difference except for the roughness, but the roughness is difficult to be clearly distinguished only by visual observation, so that the situation that the deposition ring is reversely assembled occurs. If the deposition ring is reversed so that it is smooth and facing upwards, the film deposited on it will fall off to the substrate surface, causing particle contamination. Therefore, it is necessary to modify the existing structure of the deposition ring so that it can more conveniently and intuitively distinguish the front and the back.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.
Disclosure of utility model
In view of the above-mentioned drawbacks of the prior art, an object of the present utility model is to provide a deposition ring and a thin film deposition apparatus, which are used for solving the problems of the prior art that the rough surface and the smooth surface of the deposition ring are different in roughness, difficult to distinguish obviously, easy to reverse, and easy to drop the thin film on the surface of the deposition ring, causing particle pollution, etc.
To achieve the above and other related objects, the present utility model provides a deposition ring, which includes an annular body and more than two columnar structures, the annular body has a first surface and a second surface opposite to each other, the roughness of the first surface is greater than that of the second surface, the more than two columnar structures are disposed on the same circumferential surface of the second surface at intervals, and the diameter of the circumferential surface is greater than that of a carrier to be matched.
Optionally, the number of the columnar structures is 2, and the 2 columnar structures are distributed in a central symmetry manner with the center of the same circumferential surface.
Optionally, at least 2 columnar structures have different heights.
Optionally, the columnar structure is a screw and is detachably fixed on the second surface of the annular main body.
Optionally, the deposition ring comprises a metal ring.
Optionally, the surface of the deposition ring is formed with an anodic coating.
Optionally, the annular main body includes a first annular portion and a second annular portion around locating first annular portion circumference, and the height of second annular portion is less than the height of first annular portion, the columnar structure sets up on the second annular portion.
The utility model also provides a thin film deposition device, which comprises a carrier, a protection ring and the deposition ring in any scheme, wherein the deposition ring is arranged on the circumference of the carrier in a mode that a columnar structure faces downwards, and the protection ring is arranged above the circumference of the deposition ring and extends downwards to the circumference periphery of the deposition ring.
Optionally, the thin film deposition apparatus further comprises a susceptor, the stage is fixed on the susceptor, and the guard ring extends downward to a circumferential periphery of the susceptor.
Optionally, the thin film deposition apparatus further comprises a driving device for driving the stage to rotate and/or lift.
As described above, the deposition ring and the thin film deposition apparatus of the present utility model have the following advantageous effects: according to the deposition ring provided by the utility model, the columnar structure is arranged on one surface, so that the rough surface and the smooth surface of the deposition ring can be obviously distinguished visually, and the protection ring cannot be normally assembled when the deposition ring is reversely assembled, so that the phenomenon of reverse assembly of the deposition ring is avoided during operation, and the improvement of the operation yield is facilitated.
Drawings
FIG. 1 shows an illustrative top view of a deposition ring provided by the present utility model.
Fig. 2 shows an exemplary cross-sectional structural schematic of a deposition ring provided by the present utility model.
FIG. 3 is a schematic view of a deposition ring according to the present utility model when properly assembled.
FIG. 4 is a schematic view of a deposition ring according to the present utility model when the deposition ring is reversed.
Fig. 5 is a schematic view showing an exemplary cross-sectional structure of a thin film deposition apparatus according to the present utility model.
Fig. 6 is a partially exploded view of a thin film deposition apparatus according to the present utility model.
Detailed Description
Other advantages and effects of the present utility model will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present utility model with reference to specific examples. The utility model may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present utility model. As described in detail in the embodiments of the present utility model, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present utility model. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of the present application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present utility model by way of illustration, and only the components related to the present utility model are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex. In order to make the illustration as concise as possible, not all structures are labeled in the drawings.
As shown in fig. 1 and 2, the present utility model provides a deposition ring 11, where the deposition ring 11 can be used on a thin film deposition apparatus to prevent target particles during thin film deposition from depositing on the surface of a stage 13 of the apparatus, so as to pollute the stage 13 and prevent the stage 13 from being failed due to short circuit and being unable to adsorb the target particles.
The deposition ring 11 is referred to as an annular structure having an annular body 111 and two or more columnar structures 112. Inside the annular body 111 is a circular cavity 113, the diameter of the circular cavity 113 matching the diameter of the wafer 14 to be deposited, e.g. close to the diameter of the wafer 14, so that the wafer 14 can be placed right inside its cavity 113. That is, the annular body is disposed around the circumference of the wafer 14, so that deposition of a thin film on the surface of the stage 13 covered thereby is prevented, and deposition of the edge of the wafer 14 is prevented. The annular body 111 has opposite first and second surfaces, the first surface having a roughness greater than that of the second surface. Or two opposite surfaces of the annular body 111 having different roughnesses may be defined as a rough surface and a smooth surface. The deposition ring 11 is placed on the stage 13 with the roughness facing upwards and surrounds the wafer 14. The rough surface can increase the adsorption capacity to target particles and prevent the target particles adsorbed on the surface of the deposition ring 11 and the thin film deposited on the surface from falling off. While its smooth surface is in good contact with the stage 13. The two or more columnar structures 112 are disposed on the second surface, i.e. the same circumferential surface of the smooth surface, at intervals, and the diameter of the circumferential surface is larger than that of the carrier 13 to be matched.
An exemplary method for using the deposition ring provided in this embodiment is that, before the apparatus is used, as shown in fig. 3, the deposition ring 11 is first disposed on the stage 13 with the rough surface (i.e., the first surface) facing upward, the surface of the columnar structure 112 facing downward, and the columnar structure 112 extends downward to the side of the stage 13, then the wafer 14 to be deposited is placed in the circular cavity 113 of the deposition ring 11 and placed on the stage 13, and then the guard ring 12 (as the name implies, the annular structure is also used, the middle annular cavity exposes the wafer 14) is placed above the circumferential direction of the deposition ring 11 and contacts the outer side of the annular body of the deposition ring 11, and a portion of the surface of the inner side of the annular body is exposed to adsorb the target particles sputtered onto the surface during the deposition process. As shown in fig. 4, if the deposition ring 11 is installed such that the columnar structure 112 is upward, the guard ring 12 is lifted up by the columnar structure 112 of the deposition ring 11 and cannot be attached to the deposition ring 11, and the apparatus cannot be operated.
According to the deposition ring provided by the utility model, the columnar structure is arranged on one surface, so that the rough surface and the smooth surface of the deposition ring can be obviously distinguished from each other in visual sense and touch sense, and the protection ring cannot be normally assembled when the deposition ring is reversely assembled, so that the phenomenon of reverse assembly of the deposition ring is avoided during operation, and the improvement of the operation yield is facilitated.
The material of the deposition ring 11 can be flexibly selected according to different deposition processes. For example, in some examples, the deposition ring 11 is a metal ring, such as an aluminum alloy ring or a stainless steel ring. One of the surfaces of the metal ring may have a roughened surface by aluminum-shot treatment and/or frosting treatment. The roughness is determined according to the need, and is not particularly limited. In other examples, the deposition ring 11 may be a ceramic ring such as aluminum nitride or aluminum oxide, and the surface of the ceramic ring may be anodized. Or the surface of the deposition ring 11 is coated with an anodic coating. In other examples, the rough surface of the deposition ring 11 may be further provided with a plurality of grooves, so that the recognition degree of the rough surface is increased, and the sputtered particles falling onto the surface of the deposition ring can be further prevented from falling off again.
In a further example, the annular body 111 of the deposition ring 11 includes a first annular portion 111a and a second annular portion 111b wound around the first annular portion 111a, the second annular portion 111b has a height lower than that of the first annular portion 111a, and the columnar structure 112 is disposed on the second annular portion 111 b. The first annular portion 111a and the second annular portion 111b are preferably integrally formed. During normal installation, the protection ring 12 is pressed on the surface of the second annular part 111b of the deposition ring 11, and the height difference of the two parts enables a step to be formed at the junction, and the step can play a limiting role. Therefore, the structure is more convenient for assembling the deposition assembly, and dislocation and displacement are prevented during assembling.
The number of columnar structures 112 may be as desired. For example, in some examples, the number of columnar structures 112 is 2, and the 2 columnar structures 112 are distributed in a central symmetry manner around the center of the same circumferential surface. And the distance between the two columnar structures 112 is larger than the diameter of the stage 13, so that the columnar structures 112 do not contact with the side surface of the stage 13 to prevent friction with the stage 13. I.e. two columnar structures 112 are located on opposite sides of the deposition ring 11 and on the same diameter. In a further example, the heights of the two columnar structures 112 are different. Thus, when the deposition ring 11 is reversely installed, the columnar structure 112 of the deposition ring 11 will jack up the guard ring 12, and the guard ring 12 is inclined and cannot be stably installed on the deposition ring 11, so that an installer can immediately know that the deposition ring 11 is reversely installed. In other examples, the columnar structures 112 may be more than 3, and preferably at least 2 columnar structures 112 have different heights. The columnar structures 112 are preferably equally spaced on the same circumferential surface. The diameter and height of each columnar structure 112 may be determined according to the need, for example, each columnar structure 112 is preferably a cylinder, the height of each columnar structure 112 is not more than 3cm, preferably more than 0.5cm, and the diameter is preferably controlled within 0.5-1 cm.
The columnar structure 112 and the annular body 111 of the deposition ring 11 may be of an integrally formed structure, i.e. they are non-detachably connected. In another example, the columnar structure 112 is a screw, and is detachably fixed to the second surface of the annular body 111. In a further example, the annular body 111 may be provided with a greater number of mounting grooves than the number of columnar structures 112, or the grooves for mounting the columnar structures 112 may be provided as bar-shaped grooves, so that the positions of the columnar structures 112 may be adjusted according to different sizes of the carriers 13, so that the same deposition ring 11 can be applied to different sizes of the carriers 13, and the applicability thereof is improved.
As shown in fig. 5 and 6, the present application also provides a thin film deposition apparatus including a carrier 13, a guard ring 12, and a deposition ring 11 as described in any one of the above. The thin film deposition apparatus further comprises a deposition chamber 15, and the carrier 13, the guard ring 12 and the deposition ring 11 are all positioned in the deposition chamber 15. The deposition chamber 15 is provided with an air inlet and an air outlet (not shown). In some examples, the thin film deposition apparatus is a sputtering apparatus, and thus the deposition chamber 15 is provided with a sputtering assembly 16 on top, for example with a target and inert gas arrangement. In a further example, where the apparatus is a magnetron sputtering apparatus, the sputtering assembly 16 further includes a magnet arrangement, such as a permanent magnet or an electromagnet. In some examples, if the thin film deposition apparatus is a reactive sputtering apparatus, the apparatus further includes a reactive gas supply line.
The carrier 13 is used for carrying a wafer 14 to be deposited, the deposition ring 11 is disposed around the wafer 14 in a manner that a columnar structure 112 faces downward, and an annular body 111 of the deposition ring 11 is at least partially disposed on a portion of the carrier 13 not covered by the wafer 14, so as to protect the surface of the carrier 13 from film deposition. The columnar structures 112 of the deposition ring 11 extend down to the periphery of the stage 13 and preferably do not contact the stage 13. The guard ring 12 is provided over the circumference of the deposition ring 11 and extends downward to the circumference periphery of the deposition ring 11, that is, to the side of the annular body 111 of the deposition ring 11. The guard ring 12 may further prevent target particles from sputtering out onto the equipment cavity. The foregoing description of the deposition ring 11 may be incorporated by reference herein in its entirety and will not be repeated for the sake of brevity.
In some examples, the stage 13 includes a base 132 and an electrostatic chuck 131 positioned on the base 132. The base 132 may have heating and/or cooling devices disposed therein. In some examples, the thin film deposition apparatus further includes a driving device that drives the stage 13 to rotate and/or lift. The driving means includes, for example, a support shaft 17 and a motor 18, the support shaft 17 being connected to the bottom of the susceptor 132 and extending outside the deposition chamber 15, and the motor 18 being connected to the support shaft 17.
As an example, when the apparatus is in an idle state, in order to prevent the surface of the stage 13 from being contaminated and to ensure that the apparatus is in a good standby state, a protective sheet may be employed, for example, covering the stage 13 with a shutter.
The other structures of the thin film deposition apparatus of this embodiment are not different from those of the conventional apparatus, and this is not described in detail since this is not the point of the application.
The thin film deposition apparatus provided in this embodiment is not significantly different from the use of the existing apparatus. For example, as shown in fig. 6, the electrostatic chuck 131 is mounted on the base 132, the deposition ring 11 is disposed around the electrostatic chuck 131, and the deposition ring 11 covers the surface of the base 132 not covered by the electrostatic chuck 131, and the columnar structure 112 of the deposition ring 11 extends downward to the periphery of the base 132. The wafer 14 to be deposited is positioned on the electrostatic chuck 131 and in the cavity 113 of the deposition ring 11. The guard ring 12 is provided around the circumference of the deposition ring 11, and its extension extends downward to the side of the deposition ring 11. Due to the use of the deposition ring 11 provided by the application, the rough surface and the smooth surface of the deposition ring 11 can be distinguished more easily during assembly of the thin film deposition device provided by the application, the deposition ring 11 can be effectively prevented from being reversely assembled, the assembly efficiency can be improved, and the damage to components caused during reverse assembly can be prevented.
In summary, according to the deposition ring provided by the utility model, the columnar structure is arranged on one surface of the deposition ring, so that the rough surface and the smooth surface of the deposition ring can be obviously distinguished visually, and the protection ring cannot be normally assembled when the deposition ring is reversely assembled, thereby avoiding the reverse assembly phenomenon of the deposition ring during operation and being beneficial to improving the operation yield.
Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present utility model and its effectiveness, and are not intended to limit the utility model. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the utility model. Accordingly, it is intended that all equivalent modifications and variations of the utility model be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. The utility model provides a deposition ring, its characterized in that, deposition ring includes cyclic annular main part and more than two columnar structure, cyclic annular main part has relative first surface and second surface, and the roughness of first surface is greater than the roughness of second surface, and more than two columnar structure interval sets up on the same periphery of second surface, and the diameter of this periphery is greater than the diameter of the carrier that waits to match.
2. The deposition ring of claim 1, wherein the number of columnar structures is 2, and the 2 columnar structures are distributed in a central symmetry manner with the center of the same circumferential surface.
3. The deposition ring of claim 1 wherein at least 2 columnar structures differ in height.
4. The deposition ring of claim 1, wherein the columnar structure is a screw removably secured to the second surface of the annular body.
5. The deposition ring of claim 1, wherein the deposition ring comprises a metal ring.
6. The deposition ring of claim 1, wherein a surface of the deposition ring is formed with an anodic coating.
7. The deposition ring as claimed in any one of claims 1 to 6, wherein the annular body includes a first annular portion and a second annular portion wound around the first annular portion, the second annular portion having a height lower than that of the first annular portion, and the columnar structure is provided on the second annular portion.
8. A thin film deposition apparatus comprising a carrier, a guard ring, and the deposition ring according to any one of claims 1 to 7, the deposition ring being annularly provided in a columnar structure downward on the carrier in a circumferential direction, the guard ring being provided above the deposition ring in the circumferential direction and extending downward to a circumferential periphery of the deposition ring.
9. The thin film deposition apparatus according to claim 8, wherein the stage comprises a base and an electrostatic chuck disposed on the base.
10. The thin film deposition apparatus according to claim 8, further comprising a driving device that drives the stage to rotate and/or lift.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202322602796.5U CN220952025U (en) | 2023-09-25 | 2023-09-25 | Deposition ring and thin film deposition apparatus |
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Application Number | Priority Date | Filing Date | Title |
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CN202322602796.5U CN220952025U (en) | 2023-09-25 | 2023-09-25 | Deposition ring and thin film deposition apparatus |
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CN220952025U true CN220952025U (en) | 2024-05-14 |
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CN202322602796.5U Active CN220952025U (en) | 2023-09-25 | 2023-09-25 | Deposition ring and thin film deposition apparatus |
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