KR20130075639A - A film forming apparatus and a plate for capturing particles - Google Patents

Abstract

PURPOSE: A film forming apparatus and a particle capturing plate are provided to effectively prevent the exfoliation of a sedimentary film and to effectively capture film forming materials by forming uneven portions on the surface of the particle capturing plate. CONSTITUTION: A film forming apparatus comprises a film forming chamber for coating film forming materials on a target film forming member. The film forming chamber has a particle capturing plate. First and second uneven portions (32,34) are formed on the surface of the particle capturing plate. The second uneven portions are formed on the first uneven portions and are minuter than the first uneven portions.

Description

A film forming apparatus and a plate for capturing particles}

The present invention relates to a film forming apparatus for depositing a film forming material on a film forming material and a particle trapping plate mounted to the film forming apparatus.

In a film forming apparatus for forming a thin film such as an ITO (Indium Tin Oxide) film, film forming atoms (film forming materials) adhere to inner walls other than film forming materials such as substrates in a film forming chamber, and coarse particles called particles. May be deposited on the inner wall. The film in which the particles are deposited may be peeled off from the inner wall of the film formation chamber, and it scatters and adheres to the film formation chamber and the substrate, resulting in problems such as deterioration in film formation quality.

Therefore, in the film-forming apparatus of Unexamined-Japanese-Patent No. 2008-291299, for example, the shield member is arrange | positioned in the film-forming chamber. The shield member is formed with a plasma sprayed film made of aluminum or an aluminum alloy on the surface thereof, and has a roughened surface of the plasma sprayed film. As a result, the shield member is intended to prevent the particles from peeling off.

For example, in the film forming apparatus described in Japanese Patent Laid-Open No. 2001-234325, an electrolytic copper foil having an embossed surface having a beaker hardness of 100 to 130 Hv is disposed inside the film formation chamber, and particles are formed by electrolytic copper foil. The prevention of peeling off is aimed at.

However, in the above conventional configuration, the trapping function of the film forming material and the retention of the deposited film formed by the particles are not sufficient, so that the deposition of the deposited film eventually occurs. Therefore, further improvement is desired regarding the peeling of the deposited film.

This invention is made | formed in order to solve the said subject, and an object of this invention is to provide the film-forming apparatus and particle capture plate which can suppress peeling of a deposited film effectively.

MEANS TO SOLVE THE PROBLEM As a result of earnestly researching in order to solve the said subject, the present inventors discovered that by making the surface on which film-forming material adheres into a specific shape, it was able to capture and hold a film-forming material effectively, and came to this invention.

That is, the film forming apparatus according to the present invention is a film forming apparatus having a film forming chamber for performing a film forming process for forming a film forming material on a film forming material. The film forming apparatus includes a particle trapping plate disposed in the film forming chamber, and has a surface of the particle trapping plate. It is formed on 1st unevenness | corrugation, and 1st unevenness | corrugation, The 2nd unevenness | fine-particles finer than 1st unevenness | corrugation are formed, It is characterized by the above-mentioned.

In this film forming apparatus, first unevenness and second unevenness finer than the first unevenness are formed on the surface of the particle trapping plate. In the particle trapping plate, since the surface area is enlarged by the first unevenness and the second unevenness, the attachment surface of the film forming material is secured. In addition, the film formation material can be effectively captured by the fine anchoring effect of the second unevenness. In addition, the film formation material (particle) captured by the second unevenness can be deposited and retained by the first unevenness having a larger unevenness than the second unevenness. Therefore, the film-forming material can be effectively captured and retained. As a result, peeling of a deposited film can be suppressed effectively.

The 1st unevenness | corrugation is formed by the 1st process, and the 2nd unevenness | corrugation is formed by the 2nd process performed after a 1st process. Thus, by giving a 2nd process after a 1st process, 2nd unevenness | corrugation is formed over the whole surface of a 1st unevenness | corrugation.

The first processing is a lattice processing, and the second processing is an air blast processing. By using such a processing method, 1st unevenness | corrugation and 2nd unevenness | corrugation can be formed favorable respectively.

The first unevenness is a crisscross pattern formed by the lattice processing. Here, the crisscross pattern includes not only a case where a plurality of lines cross at right angles (90 degrees) but also a case where they cross at angles other than right angles (for example, 70 degrees or 45 degrees). By making the first unevenness into a crisscross pattern, the surface area of the particle trapping plate can be enlarged, and as a result, the forming surface of the second unevenness also increases. Therefore, the trapping surface of the film forming material can be further secured. In addition, by forming a crisscross pattern, the film-forming material can be captured from multiple directions.

The pitch of the first unevenness is 1.6 mm, and the depth of the groove of the first unevenness is 0.7 mm. Thereby, the particle captured and deposited by the 2nd unevenness can be hold | maintained more suitably, and peeling of a deposited film can be suppressed more suitably.

It is preferable that a particle capture plate is made of copper. By using a copper plate, the process of a 1st unevenness | corrugation and a 2nd unevenness | corrugation can be performed favorably.

It is preferable that a particle capture plate is 3 mm in thickness. Thus, rigidity can be ensured by setting plate thickness to 3 mm. Therefore, the removal (washing) operation | work of the film-forming material adhering to the particle capture plate can be performed favorably.

In addition, the particle trapping plate according to the present invention is a particle trapping plate disposed in the deposition chamber of the film forming apparatus, on the surface of which the first unevenness and the first unevenness are formed, and the second unevenness is finer than the first unevenness. It is characterized by that.

In this particle trapping plate, first unevenness and second unevenness that are finer than the first unevenness are formed. Thereby, since the surface area is enlarged by the 1st unevenness | corrugation and the 2nd unevenness | corrugation, the adhesion surface of the film-forming material is ensured. Moreover, the film-forming material can be effectively captured by the fine anchoring effect of the second unevenness. In addition, the film formation material (particle) captured by the second unevenness can be deposited and retained by the first unevenness having a larger unevenness than the second unevenness. Therefore, the film-forming material can be effectively captured and retained. As a result, peeling of a deposited film can be suppressed.

In this particle trapping plate, the pitch of the first unevenness is 1.6 mm, and the depth of the groove of the first unevenness is 0.7 mm. Thereby, the particle captured and deposited by the 2nd unevenness can be hold | maintained more suitably, and peeling of a deposited film can be suppressed more suitably.

According to this invention, peeling of a deposited film can be suppressed effectively.

1 is a diagram illustrating a configuration of a film forming apparatus according to an embodiment.
FIG. 2 is a view of the film forming apparatus shown in FIG. 1 seen from the side. FIG.
3 is a view showing the surface of the particle trap plate.
It is sectional drawing which expands and shows the surface of the particle capture plate shown in FIG.
5 is a cross-sectional view illustrating a mounting structure of a particle capture plate and a cooling plate.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described in detail with reference to an accompanying drawing. In addition, in description of drawing, the same code | symbol is attached | subjected to the same or equivalent element, and the overlapping description is abbreviate | omitted.

1 is a diagram illustrating a configuration of a film forming apparatus according to an embodiment. FIG. 2 is a view of the film forming apparatus shown in FIG. 1 seen from the side. FIG. The film forming apparatus 1 is disposed in the vacuum chamber 3 serving as the film forming chamber, the plasma gun 5 serving as the plasma source for supplying the plasma beam PB into the vacuum chamber 3, and the bottom portion of the vacuum chamber 3. An anode member 7 into which the plasma beam PB is incident is provided, and a conveyance mechanism 10 arranged above the vacuum vessel 3 to move the tray T above the anode member 7.

The plasma gun 5 is a pressure gradient plasma gun that generates the plasma beam PB, and between the plasma gun 5 and the vacuum vessel 3, the plasma beam PB is placed in the vacuum vessel 3. Intermediate electrodes 12, 14, steering coils (not shown), and the like, are disposed to guide the same. In addition, the anode member 7 includes a hearth 16 having a hearth body 18 for inducing a plasma beam PB from the plasma gun 5 downward and accommodating a film formation material, and arranged around the anode member 7. It consists of an annular auxiliary anode (20). The conveying mechanism 10 includes a plurality of rollers 24 arranged in the conveying path 22 in a horizontal direction, and a driving device for moving the trays T at a constant speed by rotating the rollers 24 at an appropriate speed ( Not shown). In the conveying path 22, the heater 26 which heats the glass substrate (coated film material) W is arrange | positioned.

In this film forming apparatus 1, discharge occurs between the cathode (not shown) of the plasma gun 5 and the hearth 16 in the vacuum vessel 3, thereby generating a plasma beam PB. The plasma beam PB is guided to a magnetic field determined by a steering coil, a permanent magnet in the auxiliary anode 20, or the like to reach the hearth 16. Film-forming materials such as, for example, ITO (indium tin oxide) contained in the hearth body 18 are heated and evaporated by the plasma beam PB. The evaporated film forming material (evaporated particles) is ionized by the plasma beam PB and exposed to the surface of the glass substrate W exposed on the lower surface of the tray T, which is moved at a constant speed by the transport mechanism 10. A film such as ITO (indium tin oxide) is formed thereon.

In the vacuum container 3 of the film-forming apparatus 1 which has the above structure, a film-forming material adheres to the inner surface (inner wall) of the vacuum container 3, and particle | grains (coarse particle) are deposited. If the particles are deposited to some extent, the particles (film) deposited from the inner surface of the vacuum vessel 3 may be peeled off and scattered in the vacuum vessel 3 to adhere to the glass substrate W. FIG. As a result, problems such as contamination of the glass substrate W and deterioration of quality occur.

Therefore, the film-forming apparatus 1 is equipped with the particle capture plate 30 arrange | positioned in the vacuum container 3. As shown in FIG. The particle capture plate 30 is disposed along the inner surface of the vacuum container 3 and has a function of capturing and holding the film forming material. The particle capture plate 30 is, for example, a plate member made of copper, and the thickness thereof is, for example, about 3 mm. Hereinafter, the particle capture plate 30 will be described in detail with reference to FIGS. 3 and 4.

3 is a view showing the surface of the particle trapping plate. 4 is an enlarged cross-sectional view of the surface of the particle trapping plate illustrated in FIG. 3.

As shown in FIG. 3 and FIG. 4, a first unevenness (first unevenness) 32 and a second unevenness (second unevenness) 34 are formed on the surface 30a of the particle capture plate 30. have. The 1st unevenness | corrugation 32 is a crisscross pattern which is a latticed processing pattern formed by the lottery processing. Laurel processed pattern (English name: Knurling) is prescribed | regulated to JIS B 0951.

As for the 1st unevenness | corrugation 32, the cross section of the convex part showed the substantially mountain shape. In other words, the first unevenness 32 is composed of a top portion connecting the grooves and the adjacent grooves. The pitch t of the first unevenness 32 is 1.6 mm, for example. The depth (height from the bottom to the top) h of the groove in the first unevenness 32 is 0.7 mm, for example. The groove of the first unevenness 32 is substantially V-shaped, and the angle at which one side and the other side intersect is, for example, 90 degrees. The 1st unevenness | corrugation 32 is formed by pressing a surface of a copper plate, for example, by pressing a latlet tool on a copper plate, making plastic deformation, or cutting the surface of a copper plate. However, the pitch t, the depth h, and the angle at which one side of the groove and the other side intersect are not limited to the above values, but may be slightly higher or lower than the above values, or may be other values.

The second unevenness 34 is formed on the first unevenness 32. The 2nd unevenness | corrugation 34 is a fine unevenness | corrugation formed by air blast processing, and very unevenness | corrugation is very small compared with the 1st unevenness | corrugation 32. As shown in FIG. The second unevenness 34 is formed by air blasting on the surface of the first unevenness 32 after the first unevenness 32 is formed by the lattice processing. That is, the surface (surface 30a of the particle trapping plate 30) of the first unevenness 32 is an uneven surface.

It is preferable to form the 2nd unevenness | corrugation 34, for example by colliding a projection (for example, alumina) of about 300-355 micrometers in particle diameter, and center line average roughness Rz is 20, for example. It is preferable that it is about -40 micrometers.

The particle capture plate 30 is disposed in the vacuum container 3 such that the surface 30a on which the first unevenness 32 and the second unevenness 34 are formed faces the inside of the vacuum container 3. Specifically, the particle capture plate 30 is disposed along the inner surface of the vacuum vessel 3 so as to surround the anode member 7.

The back surface 30b on the opposite side of the surface 30a of the particle trapping plate 30 is a glossy surface (unprocessed surface). The cooling plate 40 is provided in this back surface 30b. The cooling plate 40 is, for example, a plate-shaped member having a thickness of about 5 mm, and is disposed in the vacuum vessel 3 between the inner surface of the vacuum vessel 3 and the particle capture plate 30. .

The cooling plate 40 is attached to the particle capture plate 30 by a stud bolt 50 and a cap nut 52. 5 is an enlarged cross-sectional view showing a mounting structure between a particle trapping plate and a cooling plate. As shown in FIG. 5, the cooling plate 40 has one surface 40a disposed to face the rear surface 30b of the particle trapping plate 30, and is in close contact with the rear surface 30b. In addition, close contact here means that the back surface 30b of the particle capture plate 30 and the one surface 40a of the cooling plate 40 are in surface contact at least. By this structure, the cooling plate 40 is provided integrally with the particle capture plate 30.

When the cooling plate 40 is attached to the particle capture plate 30, the cooling plate 40, the particle capture plate 30, and the pressure are applied to the stud bolts 50 from the inner side of the vacuum container 3. The washer 54 and the cap nut 52 are set in this order, and the cap nut 52 is fastened to the stud bolt by a spanner. However, the nut 56 is formed in the stud bolt 50, and the set screw 58 for preventing engagement is attached to the nut 56.

As shown in FIG. 1 and FIG. 2, the cooling plate 40 is provided with a cooling pipe 42 through which a coolant (water) passes. The cooling pipe 42 is disposed on the other surface 40b side of the cooling plate 40. The cooling pipe 42 is disposed over the entire surface of the cooling plate 40. The cooling plate 40 and the cooling tube 42 comprise a cooling mechanism.

As described above, in the present embodiment, the particle trapping plate 30 is disposed in the vacuum container 3. On the surface 30a of the particle trapping plate 30, a first unevenness 32 and a second unevenness 34 that is finer than the first unevenness 32 are formed. In the particle trapping plate 30, the surface area is enlarged by the first unevenness 32 and the second unevenness 34, and the adhesion surface of the film-forming material is secured. In addition, the film formation material can be effectively captured by the anchor effect of the fine second unevenness 34. In addition, particles captured by the second unevenness 34 can be deposited and retained by the first unevenness 32 having larger unevenness than the second unevenness 34. Therefore, the film-forming material can be effectively captured and retained. As a result, peeling of a deposited film can be suppressed effectively.

Moreover, since the particle capture plate 30 is about 3 mm in thickness, rigidity is ensured. Therefore, the removal work of a deposit can be performed favorably. In addition, since the first concave-convex 32 having a depth h of about 0.7 mm is formed in the particle trapping plate 30, air blasting is performed on the first concave-convex 32 during the second concave-convex ( 34). Therefore, the reproducing operation can be performed simply. As a result, the workability is improved and the cost is reduced.

In addition, since the first unevenness 32 is a crisscross pattern formed by lattice processing, the surface area can be enlarged, and a film is formed in comparison with the case where a pattern is formed along one direction (flat pattern). The material can be captured in multiple directions. Therefore, the trapping property of the film-forming material can be improved.

If the pitch t of the first unevenness 32 is 1.6 mm and the depth h of the groove of the first unevenness is 0.7 mm, the particles captured and deposited by the second unevenness 34 are more suitably used. It can hold | maintain and the peeling of a deposited film can be suppressed more suitably.

Moreover, since the particle capture plate 30 and the cooling plate 40 are integrally provided, the cooling function can be added to the particle capture plate 30 itself. Therefore, the structure of the cooling mechanism and further the structure of the film forming apparatus 1 can be simplified.

In addition, since the particle capture plate 30 and the cooling plate 40 are mounted by the stud bolts 50 and the cap nut 52, the plate thickness of the cooling plate 40 is thin (for example, 5 mm), the mounting screw of the cooling plate 40 can be protected, and the particle capture plate 30 and the cooling plate 40 can be firmly fixed.

This invention is not limited to the said embodiment. For example, in the said embodiment, although the 1st unevenness | corrugation 32 is formed by the rocket processing, and the 2nd unevenness | corrugation 34 is formed by air blasting process, the 1st unevenness | corrugation 32 and the 2nd unevenness | corrugation ( 34) may be formed by other processing methods.

Moreover, in the said embodiment, although the structure which particle capture plate 30 is arrange | positioned at the film-forming apparatus 1 which performs the film-forming process by ion plating using plasma was demonstrated, the particle capture plate 30 is sputtering etc. You may be arrange | positioned at the apparatus which performs the film-forming process by this.

Moreover, in the said embodiment, although the cooling plate 40 is provided integrally with the particle capture plate 30, depending on the temperature environment of the vacuum container 3 in the film-forming apparatus 1, the cooling plate 40 is carried out. You do not need to install).

Moreover, in the said embodiment, although the particle capture plate 30 is made into the copper plate member, the particle capture plate 30 may be comprised from other raw materials. From the standpoint of ease of processing, the particle trapping plate 30 is preferably made of copper.

Moreover, in the said embodiment, although the form in which the fine 2nd unevenness | corrugation 34 was formed also in the recessed part in the 1st unevenness | corrugation 32 was demonstrated, in the recessed part of the 1st unevenness | corrugation 32, the 2nd unevenness | corrugation 34 ) Does not have to be formed. In the particle trapping plate 30, the fine second unevenness 34 has a function of mainly trapping the film formation material, and has a function of retaining the film formation material mainly deposited in the recesses of the first unevenness 32. In this case, the peeling of the deposited film can be effectively suppressed without forming the second unevenness 34 in the recessed portion of the first unevenness 32 as described above.

1: Deposition apparatus 3: Vacuum vessel (deposition chamber)
30: particle capture plate 30a: surface
30b: back side 32: first unevenness
34: 2nd unevenness 40: cooling plate
50: stud bolt 52: cap nut

Claims (13)

A film forming apparatus comprising a film forming chamber for performing a film forming process for forming a film forming material on a film forming material.
A particle trapping plate disposed in the deposition chamber,
The film-forming apparatus of the said particle capture plate is provided with the 1st unevenness | corrugation and the 2nd unevenness | corrugation formed on the said 1st unevenness | corrugation and finer than the said 1st unevenness | corrugation. The method of claim 1,
The first unevenness is formed by the first processing,
The said 2nd unevenness | corrugation is formed by the 2nd process performed after the said 1st process, The film-forming apparatus characterized by the above-mentioned. 3. The method of claim 2,
The first processing is a lottery processing,
The said 2nd process is air blast processing, The film-forming apparatus characterized by the above-mentioned. The method of claim 3, wherein
And the first unevenness is a crisscross pattern formed by the lattice processing. The method of claim 4, wherein
The pitch of the first unevenness is 1.6mm,
Deposition apparatus, characterized in that the depth of the groove of the first unevenness is 0.7mm. 6. The method according to any one of claims 1 to 5,
A film forming apparatus, characterized in that a cooling plate is provided on the rear surface opposite to the surface of the particle trap plate. The method according to any one of claims 1 to 4,
And said particle trap plate is made of copper. The method according to any one of claims 1 to 4,
The particle trap plate is a film forming apparatus, characterized in that the plate thickness is 3mm. The method according to claim 6,
The film forming apparatus is characterized in that the cooling plate is integrally provided to the particle capture plate by a stud bolt and a nut. A particle trapping plate disposed in a deposition chamber of a film deposition apparatus,
The particle | grain capture plate characterized by the above-mentioned 1st unevenness | corrugation and the 2nd unevenness | corrugation which is finer than the said 1st unevenness | corrugation is formed in the surface. 11. The method of claim 10,
The first unevenness is formed by the first processing,
The said 2nd unevenness | corrugation is formed by the 2nd process performed after the said 1st process, The particle capture plate characterized by the above-mentioned. The method of claim 11,
The first processing is a lottery processing,
The said 2nd process is air blast processing, The particle capture plate characterized by the above-mentioned. 13. The method of claim 12,
The pitch of the first unevenness is 1.6mm,
The particle catch plate of claim 1, wherein the groove has a depth of 0.7 mm.

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