M321903 八、新型說明： 【新型所屬之技術領域】. 本創作係提供一種濺供嫌* λ M ut ^ ^ . 、又機之冷卻裝置，尤指其技術上 挺供一種可拆離之冷卻步 ^ ^ ^ ^ 々卻裝置降低濺鍍廢熱， ^升良率及製程速度可、试經&制 又了減級而製程可縮短。 【先則技術】 參閱第一圖所示，你兔羽田、成 .,^ ，…、、I用錢鍍機之剖示圖，濺鍍機 之、、、吉構主要包含有：M321903 VIII. New description: [New technical field] The creation department provides a cooling device for splashing, λ M ut ^ ^ , and machine, especially for a detachable cooling step. ^ ^ ^ ^ 々 装置 装置 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低[First technique] Referring to the first figure, the cross-sectional view of your rabbit Haneda, Cheng., ^, ..., I I use a money plating machine, the sputtering machine, and the Jiji structure mainly include:
/賤錢源（1 0 )以離子濺射原 生電子，這些加速電子會與真 體碰撞，使其帶正電，這些帶 )及引而撞擊陰極，入射離子 擊靶材表面的原子，這些原子 射離子的動量轉移，被撞擊的 子的動量’對靶材表面下原子 起材表面下多層原子的擠壓， 力而把表面原子碰撞出去，這 終於沉積在被鍍物（i 5 )上 一濺鍍源（1 〇 )，該 理’先利用電場使兩極間產 空腔中己預先充入的惰性氣 正電的粒子會受陰極（靶材 受到電場作用獲得動量，撞 受到正電離子的碰撞得到入 靶材表面原子因接受入射離 造成壓擠使其發生移位，此 會產生垂直乾材表面的作用 些被碰撞出去的原子，最後 完成濺鍍； 一防著板結構（1_ 1 )，該防著板結構（丄丄）設於 導軌結構（1 2 )兩側，防著板結構（1 i )防止 】—"匕 積於置物板（1 4 )以外之機台其他位置； 一導軌結構（1 2 ) ’該導轨結構（χ 2 )設於輸送 帶結構（1 3 )之兩側，以導引置物板（1 4 )移動方向 5 M321903 3 )輸送 一輸送帶結構（1 3 )，該輸送帶結構（ 置物板（1 4 )經過濺鍍源（1 〇 ); 數置物板（1 4 )，提供被鍍物（1 5 )放置· 藉由上述組成，被鍍物（5 )置於置物板（丄4 ) ’再將置物板（1 4 )置於輸送帶結構（i 3 )，經導軌 結構（1 2 )導引，而經過⑽源（1 〇 )完成濺鑛。 准’其上述習用之賤鍍機，仍存在有下列缺失· 1 ·濺鍍源（1 0 )之濺鍍過程會產生廢熱，而真空 腔會有熱累積的問題，習用之濺鍍機只能利用金屬材質之 機台自然導熱散熱，但過程相當緩慢，造成溫度居高不下 ’影響被鍍物（1 5 )因過高溫度產生變形蓉了 不良品之增加。 ° 2 ·因為被鑛物（χ 5 )無法料溫，所以習用的作 二：是加快輸送帶的速度，以減短被鑛物（15)在高溫 ，二=，但短時間並不能濺鑛完全，所以增加濺鑛機 變1:::’但如此不僅機台成本增加，製程長度也 飞要較大的場所才能擺設。 —是以’針對上述習知結構所存在之問題 種更具理想實用性之創新結構，實消費可開發 亦係相關業者須努 、斤焱切企盼， 、努力研發突破之目標及方向。 有鑑於此，舍丨从2丄 ^ 作人本於多年從事相關產口夕制 與設計㈣，針對上、Hβ產°口之製造開發 估後 終得一確且實用對上述之目標’詳加設計與審慎評 確具實用性之本創作。 6 •M321903 【新型内容】 習用之錢鍍機，其製程之過程 有熱累積的問題，自然散熱速 耐南溫的材質（如塑膠），所 易變形’而如果加快製程速度 ’設備也要增加，場地也需要 欲解決之技術問題點： 中會產生廢熱，且真空腔會 度也過慢，而被鍍物為無法 以被鍍物在高溫濺鍍過程容 ，則製程之長度就需要增長 配合加大。 解決問題之技術特點：一 致ί、一種濺鍍機之冷卻裝置， 主要在於濺鍍機之輸送帶社 + 、°構或/及防者板結構之異於濺 鍍區方向，鎖設可拆離之Α >人 之冷部裝置，冷卻裝置可為水冷、 液冷或熱管冷卻等，冷卻梦 、置亦可控制冷卻效率，以冷卻 裝置降低製程高溫，可佶制扣Λ办丄 4_ ή 了使&呈速度減慢，製程長度也可縮 短’良率也可提升者。 對照先前技術之功效： 、驾用濺錢機之冷卻不良，盔、 4 仏成…、法耐兩溫之被鐘 物產生變形，不良率居高 ,. ... β下，本創作之冷卻裝置得以強 制冷卻，並可控制冷卻效率， ρ放羊所以被鍍物不致有因高溫產 生變形的情形，良率得以提升者。 二、習用濺鍍機之濺鍍過程高溫，所以為了不讓被鍍 /形’就需要加快輸送帶的速度，但如此會造成機鍵不 (j而本訇作之冷卻裝置得以控制降低濺鍍廢熱，所以 氣程速度得以減緩，濺鍍得以符合需求。 三、習用濺鍍機之濺鍍過程高溫，所以為了不讓被鍍 物變形’就需要加快輸送帶的速度’但如此會造成賤鍵不 7 M321903 完全，必須增加製程設備與製程長度及成本，場地也要配 合增加，而本創作之控制降低製程廢熱，所以製程速度得 以減緩，而製程也可以縮短者。 有關本創作所採用之技術、手段及其功效，兹舉一較 佳實施例並配合圖式詳細說明於后，相信本創作上述之目 的、構造及特徵’當可由之得—深人而具體的瞭解。 【實施方式】 ,、 >閱第一圖所不，本創作係提供一種濺鍍機之冷 卻裝置，其一實施例包括·· 濺鍍源（2 0 )，兮·:膝松％ γ ^、 理，先 空腔中 正電的 受到電 受到正 乾材表 造成壓 會產生 些被碰 完成機 μ濺鍍源（2 〇 )以離子濺射原 利用電場使兩極間產生電子，這些加速電子會與真 己預先充入的惰性氣體碰撞，使其帶正電，這些帶 粒子會受陰極（說好〉 I靶材）吸引而撞擊陰極，入射離子 場作用獲得動量，撞墼知 ί里擎靶材表面的原子，這些原子 電離子的碰撞得到入射 身了離子的動1轉移，被撞擊的 面原子因接受入射離+ 耵離子的動置，對靶材表面下原子 擠使其發生移位，此靶絲 _ 此歡材表面下多層原子的擠壓，. 垂直靶材表面的作用 力而把表面原子碰撞出去，這 撞出去的原子，啬接故认 、 後〜於沉積在被鍍物（2 5 )上 鑛’過程會產生廢埶， …、且會於真空腔内累積； 防著板結構（？ 、 分 輸送帶 沉積於 (21 ^ 防著板結構（2 1 )設於 、、、口構（2 3 )兩側，防荽 番 者板、、、口構（2 1 )防止原子 置物板（2 4 ) ^ X , 機台其他位置，防著板結構 )必要時需抵车 而拆却下來，作必要之清潔動作； 8 M321903 該輸送帶結構 輸送帶結構 輸送 置物板（2 4 )經過濺鍍源（2 〇 ); 數置物板（2 4 )，提供被鍍物（2 5 )放置· 主要在於：防著板結構（21)之異於_區， )方向防著板表面〔9 7 、 μ 门— ^ b 署……、 鎖設固定可拆離之冷卻裝 4置(4 0 )可為水冷、液冷或敎焚 等等除了自然散熱以外之強制散熱，以冷卻二 〇)可以降低真空腔内之濺鑛製程所累積之廢熱：如此可 使製程速度減緩，製程長度也可縮短，良率也可提升者 另-方面，輸送帶結構（23)包含有輪 ； "間所設之區隔板（232)，區隔板（2 3 2 )僅二 輪送輪⑴"之部分輪面穿貫出，區隔板（…、 據以區隔錢區（2 6 )與傳動區，區隔板（2 :里 於機鍵區（2 6 )方向表面（2 3 3 )，鎖設固定可拆離 之冷卻裝置（41)，該冷卻裝置（41)可為水△ •冷或熱管冷卻等等除了自然散熱以外之強制散熱二二 -裝置（41),可以降低真空腔内之錢鑛製程所累積之廢熱 ’如此可使製程速度減，緩’製程長度也可縮短， 提升者。 又 〇 所述冷卻裝置（4 〇 )或（4丄）更包 人、4丄J3有一控制結 構（5 〇 ，以其控制結構（5 〇 )控制冷卻裝置（4 〇 )或（4 1 )之冷卻效率，該控制結才冓（5 〇 )可為果浦 褒置、壓縮機裝置、風扇裝置。 … 藉由上述組成，被鍍物（25)置於置物板（24〕 9 M321903 (33)第一緩衝裝置 （34)濺鍍裝置 (35)第二緩衝裝置 （36)輸出裝置 (4 0 )冷卻裝置 （4 1 )冷卻裝置 (5 0 )控制結構/ 贱 money source (1 0) ion-sputtering native electrons, these accelerated electrons will collide with the real body to make them positively charged, these bands) and lead to the cathode, the incident ion hits the atom on the surface of the target, these atoms The momentum transfer of the ion, the momentum of the impinged child's extrusion of the multilayer atoms under the surface of the atomic surface under the target, and the surface atoms collide, which is finally deposited on the object to be plated (i 5 ) Sputtering source (1 〇), the first use of the electric field to make the positively charged particles pre-charged in the cavity between the two poles to be positively charged by the cathode (the target is subjected to an electric field to obtain momentum, and is subjected to positive ion The collision gets into the target surface, the atom is displaced by the acceptance of the incident, which causes the vertical dry material surface to act on some of the atoms that are collided, and finally the sputtering is completed; an anti-plate structure (1_1) The anti-sliding plate structure (丄丄) is disposed on both sides of the rail structure (1 2 ), and the anti-plate structure (1 i ) prevents 】-" hoarding at other positions on the machine other than the storage board (1 4 ); a rail structure (1 2 ) 'the guide The structure (χ 2 ) is disposed on both sides of the conveyor belt structure (1 3 ) to guide the movement direction of the storage board (1 4 ) 5 M321903 3 ) to convey a conveyor belt structure (1 3 ), the conveyor belt structure (storage board) (1 4 ) After the sputtering source (1 〇); the number of the substrate (1 4 ), the object to be plated (1 5 ) is placed. With the above composition, the object to be plated (5) is placed on the storage plate (丄4) 'Place the storage panel (1 4 ) on the conveyor belt structure (i 3 ), guide it through the guide rail structure (1 2 ), and complete the splashing through the (10) source (1 〇). There are still the following defects. 1 · The sputtering process of the sputtering source (10) will generate waste heat, and the vacuum chamber will have the problem of heat accumulation. The conventional sputtering machine can only use the metal material to naturally dissipate heat. However, the process is quite slow, causing the temperature to remain high, which affects the increase of the defective product due to excessive temperature. ° 2 ·Because the mineral (χ 5 ) cannot be warmed, it is used. Work two: is to speed up the conveyor belt to reduce the temperature of the mineral (15) at the high temperature, two =, but not for a short time can not completely splash Therefore, the increase of the splashing machine becomes 1:::' However, not only the cost of the machine is increased, but also the place where the length of the process is also required to be large can be placed. - It is more ideal and practical for the problems existing in the above-mentioned conventional structure. Innovative structure, real consumption and development can also be related to the industry's enthusiasm, eager to look forward to, and strive to develop breakthrough goals and directions. In view of this, She has been engaged in the relevant production and maturity from 2丄^ Design (4), for the manufacturing and development of the upper and the Hβ production mouth, it is finally possible and practical to apply the above-mentioned objectives to the detailed design and prudent evaluation of the original creation. 6 • M321903 [New content] The money used The plating machine has the problem of heat accumulation during the process of the process. The natural heat dissipation rate is resistant to the south temperature material (such as plastic), and it is easy to be deformed. And if the process speed is accelerated, the equipment needs to be increased, and the site needs the technical problem to be solved. : The waste heat will be generated in the middle, and the vacuum chamber will be too slow. If the object to be plated cannot be filled in the high temperature sputtering process, the length of the process needs to be increased. Technical features to solve the problem: Consistently, a cooling device for the sputtering machine, mainly in the conveyor belt of the sputtering machine +, ° structure or / and the structure of the guard plate is different from the direction of the sputtering zone, the lock can be detached After the > human cold part device, the cooling device can be water-cooled, liquid-cooled or heat pipe cooling, etc. Cooling dreams can also control the cooling efficiency, and the cooling device can reduce the high temperature of the process, which can be used to control the Λ 4_ ή The speed of & can be slowed down, and the length of the process can be shortened. 'The yield can also be improved. Compared with the effects of the prior art: The poor cooling of the driving sprinkler, the helmet, the 4 仏成, the resistance of the law and the temperature of the object are deformed, the non-performing rate is high, ... β, the cooling of the creation The device can be forced to cool, and the cooling efficiency can be controlled. Therefore, the object to be plated does not have deformation due to high temperature, and the yield can be improved. Second, the sputtering process of the sputtering machine is high temperature, so in order to prevent the plating/shape, it is necessary to speed up the conveyor belt, but this will cause the machine key not to be (j and the cooling device of this machine can be controlled to reduce the sputtering Waste heat, so the speed of the gas path can be slowed down, and the sputtering can meet the demand. Third, the sputtering process of the conventional sputtering machine is high temperature, so in order to prevent the deformation of the object to be plated, it is necessary to speed up the speed of the conveyor belt. No. 7 M321903 is complete, the process equipment and process length and cost must be increased, the site should be increased, and the control of this creation reduces the process waste heat, so the process speed can be slowed down, and the process can be shortened. The technology used in this creation The present invention is described in detail with reference to the drawings, and it is believed that the above-mentioned objects, structures, and features of the present invention can be understood by those skilled in the art. > Read the first figure, this creation provides a cooling device for a sputtering machine, an embodiment of which includes a sputtering source (20), 兮·: Knee loose % γ ^ In the first cavity, the positive electricity in the cavity is subjected to the positive dry material, and the pressure is generated. The sputtering source (2 〇) is generated by the ion sputtering. The electric field is used to generate electrons between the two electrodes. The inert gas that has been pre-charged is collided to make it positively charged. These particles will be attracted to the cathode by the cathode (referred to as the I target), and the incident ion field will take momentum to hit the surface of the target. The atoms, the collision of these atomic ions, the movement of the incident body, the movement of the atom, the surface of the impacted surface is subjected to the action of the incident ion + 耵 ion, and the atom under the surface of the target is squeezed to cause displacement. Silk _ The extrusion of multiple layers of atoms under the surface of this slab, the force of the surface of the vertical target and the collision of the surface atoms, the atoms that are knocked out, the splicing of the atoms, the deposition of the objects (2 5 The process of 'on-mine' will produce waste, ... and will accumulate in the vacuum chamber; anti-plate structure (?, sub-conveyor belt deposition (21 ^ anti-plate structure (2 1) is set in,,,, (2 3 ) on both sides, flood control Plate, and mouth structure (2 1 ) to prevent atomic storage board (2 4 ) ^ X, other positions of the machine, anti-board structure) if necessary, need to be removed by car, to make the necessary cleaning action; 8 M321903 The conveyor belt structure conveyor belt structure transporting the storage board (2 4 ) through the sputtering source (2 〇); the number of the storage board (2 4 ), providing the object to be plated (2 5 ) placed, mainly in: anti-slab structure (21 ) is different from the _ area, ) direction against the surface of the board [9 7 , μ door - ^ b Department ..., lock fixed detachable cooling equipment 4 (4 0) can be water-cooled, liquid-cooled or simmered In addition to the natural heat dissipation, the forced cooling can reduce the waste heat accumulated in the splashing process in the vacuum chamber: the process speed can be slowed down, the process length can be shortened, and the yield can be improved. In the aspect, the conveyor belt structure (23) comprises a wheel; the zone partition (232) provided between the " partitions (2 3 2 ) only part of the wheel of the two-wheeled wheel (1)" (..., according to the compartment (2 6) and the transmission zone, the zone partition (2: in the machine keypad (2 6) direction surface (2 3 3) The lock is fixed with a detachable cooling device (41), which can be water △ • cold or heat pipe cooling, etc., in addition to natural heat dissipation, the forced heat dissipation device (41) can reduce the vacuum chamber The waste heat accumulated in the money mining process can reduce the process speed, and the process length can be shortened and improved. In addition, the cooling device (4 〇) or (4 丄) is more inclusive, and the 4 丄 J3 has a control structure (5 〇, with its control structure (5 〇) controlling the cooling device (4 〇) or (4 1 ) Cooling efficiency, the control knot (5 〇) can be a fruit pump, a compressor device, a fan device. ... With the above composition, the object to be plated (25) is placed on the storage plate (24) 9 M321903 (33) First buffer device (34) sputtering device (35) second buffer device (36) output device (40) cooling device (4 1) cooling device (50) control structure
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