TW201319597A - Semiconductor test socket - Google Patents

Abstract

Provided is a semiconductor test socket, including: a conductive silicon unit which is formed in an area which comes into contact with leads of a semiconductor device; an insulating silicon unit which is formed in an area which does not come into contact with the leads of the semiconductor device so as to support the conductive silicon unit, and performs a function of an insulating layer; and at least one insulating reinforcement line which is formed within the area which comes into contact with the leads of the conductive silicon unit, thereby being capable of minimizing the damage of a silicon rubber film caused by the friction of a contact area, which is generated because when a semiconductor is pressed on a contact surface of the semiconductor test socket, silicon rubber and conductive powders of the semiconductor test socket are pushed in all directions of the outside.

Description

Semiconductor test slot Cross-reference to related applications

The priority of the present application is the Korean Patent Application No. 10-2011-0096121, filed on Sep. 23, 2011, at the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.

This invention relates to semiconductor test sockets, and more particularly to semiconductor test sockets that reduce damage caused by semiconductor leads.

The semiconductor test socket is used to test the electrical signals of semiconductor components in a non-destructive state.

In the semiconductor test socket, while pressing the contact area of the semiconductor conductive unit and the upper end portion of the socket by appropriate pressure, the opposite portion of the semiconductor test socket forms a conductive path with the PCB (printed circuit board), and the electron is made. The flow of the signal proceeds. In general, each conductive pin that becomes a conductive path in the semiconductor test socket should be less than several hundred mΩ, and the number of repeated contacts of the socket should be more than tens of thousands of times, so that the flow of the electronic signal proceeds well.

In addition, electronic testing is performed while touching tens to hundreds of pins at the same time. Therefore, even if a poor contact or an unstable contact is formed on one of the pins, it is recognized due to the instability of the semiconductor test slot. Defects were made for the completion of the test (even if the semiconductor was completed in the test), thus reducing the yield. In addition, a severe loss of 1 to 3% is generally caused due to a reduction in the yield of re-inspection or production according to the treatment of defects. As a result, semiconductor manufacturing plants continue to develop new technologies to enable semiconductor test socket products to have good electrical life and yield.

When the small ball of the BGA (ball grid array) (the conductive unit of the semiconductor) comes into contact with the contact unit, the separation and damage of the rubber film should be prevented. Further, in the case of a TSOP (Thin Small Package) having a terminal (lead) in the outer side of the main body or a flat package having a terminal uniformly formed on the bottom of the main body, when the semiconductor is pressed onto the contact surface of the semiconductor test socket, The rubber and conductive powder between the semiconductor test sockets are pushed to the outside of all directions up to a pressing volume. At this time, the conductive powder is easily separated from the ruthenium rubber due to the friction of the contact area between the socket and the semiconductor terminal. In addition, due to the characteristics of the semiconductor package, the contact with the semiconductor test socket has a sharp cross section, which makes the silicone rubber film susceptible to damage and has a problem.

The present invention has been paid attention to the above problems, and the aspect of the present invention provides a semiconductor test socket in which insulating reinforcing wires are formed in the same direction as a semiconductor terminal, that is, according to the semiconductor test socket pressed The direction in which the volume is enlarged to minimize the damage of the rubber film caused by the friction of the contact area, which is caused by the semiconductor pressing When pressed to the contact surface of the semiconductor test socket, the rubber and conductive powder of the semiconductor test socket are pushed to the outside of all directions to a pressing volume.

According to an exemplary embodiment of the present invention, there is provided a semiconductor test socket comprising: a conductive germanium unit formed in a region in contact with a conductor of a semiconductor device; an insulating germanium unit, the insulating germanium unit being formed In a region not in contact with the wires of the semiconductor device, to support the conductive germanium unit and perform an insulating layer function; and at least one insulating reinforcing wire formed in an area in contact with the conductive germanium unit in.

According to another exemplary embodiment of the present invention, the semiconductor test socket may further include a support reinforcement line connecting the plurality of insulation reinforcement wires to a surface area of the insulation unit.

According to still another exemplary embodiment of the present invention, the semiconductor test socket may be configured to position the insulating reinforcement line in a first direction, the first direction being the width direction of the semiconductor test socket, and the support reinforcement line being at In the second direction, the second direction spans the insulation reinforcement line in the first direction at a right angle.

According to still another exemplary embodiment of the present invention, the semiconductor test socket may be configured to position the insulating reinforcement line in a first direction, the first direction being a width direction of the semiconductor test socket, and forming an area, The region is broken in the second direction, and the second direction spans the insulation reinforcement line in the first direction at a right angle.

Still in accordance with another exemplary embodiment of the present invention, a semiconductor test plug The slot may further include a side support reinforcement line connected to one end of the plurality of insulation reinforcement lines in the second direction.

According to still another exemplary embodiment of the present invention, the side support reinforcing wires may be located at both ends adjacent to each other across the insulation reinforcing wires.

According to still another exemplary embodiment of the present invention, the insulating reinforcing wire and the supporting reinforcing wire may cross each other at a right angle.

Still according to another exemplary embodiment of the present invention, the insulating reinforcing wires may be adjusted to correspond to the distance between the wires of the semiconductor device, and may thus be formed on the surface area of the conductive germanium unit.

Still according to another exemplary embodiment of the present invention, the insulating reinforcing wire may have a width of 0.05 to 0.15 mm, a length of 0.15 to 0.25 mm, and a thickness of 0.05 to 0.3 mm.

According to still another exemplary embodiment of the present invention, the insulating reinforcing wire may be formed of: polytetrafluoroethylene fluorocarbon resin fiber, guanamine fiber, polyamido fiber, polyacrylate fiber, nylon fiber or Nanofiber.

According to still another exemplary embodiment of the present invention, the support reinforcing wire may be formed of: polytetrafluoroethylene fluorocarbon resin fiber, guanamine fiber, polyamido fiber, polyacrylate fiber, nylon fiber or Nanofiber.

According to the present invention, as the wire of the semiconductor device is pressed in one direction in parallel by the insulating reinforcing wire on one surface of the slot, and the insulating reinforcing wire is also pressed, the conductive powder which appears around the insulating reinforcing wire is The pressure is relatively free to contact the wire. Therefore, according to the contact The contact area of the pressure is increased, thereby improving the contact resistance.

Further, in the present invention, even if the voltage is 10 to 20% smaller than the pressure of the prior art, a more stable electrical contact can be performed, whereby the life can be improved in accordance with repeated contact, and the test failure rate of the semiconductor test socket can be lowered.

Further, according to the present invention, when the conductive powder of the semiconductor contact terminal and the socket comes into contact with each other, the insulating reinforcing wire is also pressed, so that the conductive powder of a relatively wide area is pressed. Therefore, since the shape is maintained to be stable, the deformation of the conductive powder can be minimized, and the life of repeated contact compared with the conventional technique can be improved.

Exemplary embodiments in accordance with the present invention will be described more fully hereinafter with reference to the accompanying drawings. However, the exemplary embodiments of the invention may be embodied in many different forms and should not be construed as being limited to the embodiments described herein. Rather, the exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. With respect to elements that perform similar functions and operations, the same numerals in the present specification refer to the same elements.

1 is a side view of a semiconductor test socket in accordance with an exemplary embodiment of the present invention. A semiconductor test socket according to the present exemplary embodiment of the present invention will be explained with reference to FIG.

A semiconductor test socket according to an exemplary embodiment of the present invention is configured to include a conductive germanium unit 110, an insulating germanium unit 120 and an insulating reinforcing wire 130.

The conductive germanium unit 110 forms a region in contact with the wires 140 of the semiconductor device.

The insulating germanium unit 120 is formed in a region not in contact with the wires 140 of the semiconductor device to support the conductive germanium unit 110 and perform an insulating layer function.

At least one insulating reinforcing wire 130 is formed on a surface area in contact with the wire 140 of the conductive germanium unit 110. At this time, the insulating reinforcing wires 130 may be formed on the surface area of the conductive germanium unit 110 and may be adjusted to correspond to the distance between the wires 140 of the semiconductor device.

The semiconductor test socket according to the present invention employs an insulating reinforcing wire 130, thereby preventing the conductive germanium unit 110 from being easily damaged by the sharp wire 140. That is, in the case where the conductive cymbal unit 110 is pressed by the wire 140, the semiconductor wire is stably pressed by the insulating reinforcing wire 130. Therefore, in the present invention, when the conductive powder of the semiconductor contact terminal and the socket comes into contact with each other, the insulating reinforcing wire is also pressed, and thus the conductive powder of a relatively wide area is pressed. Therefore, a stable shape is maintained, whereby the deformation of the conductive powder can be minimized, and the life of repeated contact compared with the conventional technique can be improved.

In addition, when the wire 140 of the semiconductor device is in contact with the conductive germanium unit 110 and is pressed, the conductive powder surrounding the insulating reinforcing wire 130 is freely contacted with the wire 140 due to pressure. Therefore, the semiconductor test socket according to the present invention is stably electrically connected to the wires 140 of the semiconductor device, and the life of the repeated contacts is also improved.

Therefore, in the present invention, since a more stable electrical contact is performed, the life of the repeated contact can be improved even at a low voltage compared to the conventional technique, and the test failure rate of the semiconductor test socket can be reduced.

2 is a view of a semiconductor test socket in accordance with an exemplary embodiment of the present invention.

As shown in FIG. 2, in the semiconductor test socket according to an exemplary embodiment of the present invention, an insulating reinforcing line 130 formed of an insulating material on a contact region of a semiconductor formed by the conductive germanium unit 110 and the insulating germanium unit 120 is formed in In the horizontal direction.

As such, as the insulating reinforcing wire 130 is formed in the horizontal direction, and when the wire of the semiconductor device is pressed against the conductive germanium unit 110 of the semiconductor test socket, the wire is formed as compared with the insulating reinforcing wire 130. A relatively small force can be used to contact the conductive powder. Therefore, in the present invention, no excessive force is applied to the semiconductor which becomes thin and highly integrated, whereby the phenomenon of wafer damage or key excitation can be reduced, and the life of the semiconductor test socket can be improved.

An insulating material having stable electrical insulation and temperature and chemical characteristics is used to form the insulating reinforcing wire 130.

Figure 3 is an enlarged view of a semiconductor test socket in accordance with an exemplary embodiment of the present invention. More specifically, FIG. 3 illustrates an exemplary embodiment of an insulating reinforcing wire 130 having a width of 0.12 mm, a distance of 0.2 mm, and a thickness of 0.1 mm.

The insulating reinforcing wire 130 according to an exemplary embodiment of the present invention is formed using an insulating material having excellent electrical, thermal, and chemical properties. Polytetrafluoro Vinyl fluorocarbon resin fibers, guanamine fibers, polyamidocellulose fibers, polyacrylate-based fibers, nylon fibers, nanofibers or the like can be used as the insulating material.

The insulating reinforcing wire 130 can be used by adjusting the width, distance and thickness of the insulating reinforcing wire 130, and the insulating reinforcing wire 130 has a width of 0.05 to 0.15 mm, 0.15 to 0.25 according to the distance between the contact wires of the semiconductor during the test. The distance of mm and the thickness of 0.05 to 0.3 mm.

4, 5 and 6 are views of a semiconductor test socket in accordance with another exemplary embodiment of the present invention.

According to an exemplary embodiment of the present invention, as shown in FIGS. 4, 5, and 6, the semiconductor test socket may further include a support reinforcement line 135 that connects the insulation reinforcement wires 123.

A support reinforcing line 135 may be formed on a surface area of the insulating unit to span a plurality of insulating reinforcing lines 130. The insulating reinforcing wire 130 may be formed of polytetrafluoroethylene fluorocarbon resin fiber, guanamine fiber, polyamidocellulose fiber, polyacrylate-based fiber, nylon fiber or nanofiber.

According to another exemplary embodiment of the present invention, as illustrated in FIG. 4, the semiconductor test socket may be configured such that the support reinforcement line 135 is formed only at the central portion. More specifically, when the insulating reinforcing wires 130 are arranged in the first direction, the supporting reinforcing wires 135 may be arranged in the second direction along the central region of the insulating reinforcing wires 130. At this time, the central region in the exemplary embodiment according to the present invention is a concept including an inner region including both ends of the arrangement of the insulating reinforcing wires 130.

According to still another exemplary embodiment of the present invention, as illustrated in FIG. 5, the central region of the support reinforcing wire 135 is broken, and the support reinforcing wire 135 is connected to the plurality of insulating reinforcing wires 130 in the second direction. One end, so that the Korean alphabet can be formed" "shape.

According to still another exemplary embodiment of the present invention, as illustrated in FIG. 6, the support reinforcing wires 135 may be disposed to span both ends of the insulating reinforcing wires 130 adjacent to each other, and are reinforced at the insulating reinforcing wires 130 and the support. Lines 135 can be arranged to span each other at right angles. That is, as illustrated in FIG. 6, the structure arranged to span is to arrange the support reinforcement line 135 to resemble a Korean letter by connecting the insulation reinforcing wires 130. The zigzag sharp structure.

Further, in the case of a flat package such as a wafer level package (CSP), as illustrated in FIG. 7, since the semiconductor test socket is configured such that the wires of the conductive unit are formed flat in all directions of the lower portion of the package, The insulating reinforcing wires 130 may form a direction parallel to the wires.

Therefore, in the present invention, as the wire of the semiconductor device is pressed in one direction in parallel by the insulating reinforcing wire on one surface of the slot, and the insulating reinforcing wire is also pressed, the surrounding reinforcing reinforcing wire appears. The conductive powder is relatively free to contact the wire due to the pressure. Therefore, as the contact pressure is increased as compared with the prior art, the contact area is increased, and thus, due to the improvement of the contact resistance, a more stable electrical contact can be performed even at a pressure of 10% to 20% smaller. Therefore, in the present invention, the life of repeated contact of the semiconductor test socket can be improved, and the test failure rate of the semiconductor test socket can be reduced.

As described above, the detailed exemplary embodiments of the present invention have been described in the embodiments of the present invention, and it should be understood by those skilled in the art without departing from the spirit or scope of the invention. Modifications and changes. Therefore, it is to be understood that the foregoing description of the present invention is not intended to be limited to the specific embodiments disclosed, and modifications of the disclosed embodiments, as well as other embodiments, are intended to be included in the scope of the patent application. And the scope of the equivalent.

110‧‧‧ Conductive unit

120‧‧‧Insulation unit

130‧‧‧Insulation reinforcement line

135‧‧‧Support reinforcement line

140‧‧‧Wire

The accompanying drawings are included to provide a further understanding of the invention and are incorporated The exemplary embodiments of the invention, which are illustrated in the drawings, are intended to illustrate the principles of the invention. In the drawings: Figure 1 is a side view of a semiconductor test socket in accordance with an exemplary embodiment of the present invention.

2 is a view of a semiconductor test socket in accordance with an exemplary embodiment of the present invention.

Figure 3 is an enlarged view of a semiconductor test socket in accordance with an exemplary embodiment of the present invention.

4, 5 and 6 are views of a semiconductor test socket in accordance with another exemplary embodiment of the present invention.

Figure 7 is a view of a flat package such as a wafer level package (CSP).

110‧‧‧ Conductive unit

120‧‧‧Insulation unit

130‧‧‧Insulation reinforcement line

140‧‧‧Wire

Claims (11)

A semiconductor test socket comprising: a conductive germanium unit formed in a region in contact with a conductor of a semiconductor device; and an insulating germanium unit formed without the semiconductor device One of the wires contacting one of the regions to support the conductive germanium unit and performing an insulating layer function; and at least one insulating reinforcing wire formed in contact with the conductive wires of the conductive germanium unit In this area. The semiconductor test socket of claim 1, further comprising a support reinforcement line connecting the plurality of insulation reinforcement wires to a surface area of the insulation unit. The semiconductor test socket of claim 2, wherein the semiconductor test socket is configured to position the insulating reinforcement lines in a first direction, the first direction being a width direction of the semiconductor test socket And the support reinforcement line is located in a second direction that spans the insulation reinforcement lines in the first direction at a right angle. The semiconductor test socket of claim 2, wherein the semiconductor test socket is configured to position the insulating reinforcement lines in the first direction, the first direction being the width direction of the semiconductor test socket Forming a region that is broken in the second direction, the second direction spanning the insulated reinforcing lines in the first direction at a right angle. The semiconductor test slot of claim 3 further includes one side The reinforcing wire is supported by the side, and the side supporting reinforcing wire is connected to one end of the plurality of insulating reinforcing wires in the second direction. The semiconductor test socket of claim 5, wherein the side support reinforcing wires have a structure of one of two ends adjacent to each other across the insulating reinforcing wires. The semiconductor test socket of claim 2, wherein the insulated reinforcing wires and the supporting reinforcing wires cross each other at right angles. The semiconductor test socket of claim 1, wherein the insulating reinforcing wire is adjusted to correspond to a distance between the wires of the semiconductor device and formed on a surface area of the conductive germanium unit. The semiconductor test socket of claim 1, wherein the insulated reinforcing wires have a width of 0.05 to 0.15 mm, a length of 0.15 to .025 mm, and a thickness of 0.05 to 0.3 mm. The semiconductor test socket according to claim 1, wherein the insulation reinforcing wires are formed by: polytetrafluoroethylene fluorocarbon resin fiber, guanamine fiber, polyamidamide fiber, polyacrylate-based fiber. , nylon fiber or nanofiber. The semiconductor test socket according to claim 1, wherein the support reinforcing wire is formed of: polytetrafluoroethylene fluorocarbon resin fiber, guanamine fiber, polyamidamide fiber, polyacrylate-based fiber, Nylon fiber or nanofiber.