TW201314989A - 有機發光裝置和其製造方法 - Google Patents
有機發光裝置和其製造方法 Download PDFInfo
- Publication number
- TW201314989A TW201314989A TW101131327A TW101131327A TW201314989A TW 201314989 A TW201314989 A TW 201314989A TW 101131327 A TW101131327 A TW 101131327A TW 101131327 A TW101131327 A TW 101131327A TW 201314989 A TW201314989 A TW 201314989A
- Authority
- TW
- Taiwan
- Prior art keywords
- organic
- organic compound
- layer
- compound layer
- electrode
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 241
- 238000000034 method Methods 0.000 claims abstract description 81
- 238000000206 photolithography Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims description 60
- 238000001312 dry etching Methods 0.000 claims description 23
- 238000001771 vacuum deposition Methods 0.000 claims description 18
- 238000000059 patterning Methods 0.000 claims description 13
- 239000002195 soluble material Substances 0.000 claims description 8
- 238000005401 electroluminescence Methods 0.000 claims 28
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 436
- 239000010408 film Substances 0.000 description 49
- 230000008569 process Effects 0.000 description 40
- 239000000463 material Substances 0.000 description 20
- 238000000151 deposition Methods 0.000 description 12
- 229920003169 water-soluble polymer Polymers 0.000 description 11
- 239000003086 colorant Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000009751 slip forming Methods 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80521—Cathodes characterised by their shape
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011191413 | 2011-09-02 | ||
| JP2012176006A JP6168742B2 (ja) | 2011-09-02 | 2012-08-08 | 有機ｅｌ装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201314989A true TW201314989A (zh) | 2013-04-01 |
Family
ID=47752603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101131327A TW201314989A (zh) | 2011-09-02 | 2012-08-29 | 有機發光裝置和其製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8575835B2 (enExample) |
| JP (1) | JP6168742B2 (enExample) |
| KR (1) | KR20130025821A (enExample) |
| CN (1) | CN102983281B (enExample) |
| TW (1) | TW201314989A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6329795B2 (ja) | 2014-03-27 | 2018-05-23 | 株式会社ジャパンディスプレイ | Ｅｌ表示装置及びｅｌ表示装置の製造方法 |
| JP2016004910A (ja) * | 2014-06-17 | 2016-01-12 | キヤノン株式会社 | 有機発光装置 |
| JP6594013B2 (ja) * | 2014-06-17 | 2019-10-23 | キヤノン株式会社 | 有機発光装置及びその製造方法 |
| KR102048064B1 (ko) | 2017-04-21 | 2019-11-22 | 단국대학교 천안캠퍼스 산학협력단 | 화학적 개질을 이용한 이온교환막의 제조방법 및 이에 따라 제조된 이온교환막 |
| WO2020103801A1 (zh) * | 2018-11-19 | 2020-05-28 | 陈鼎国 | 有机发光显示器件及其制作方法 |
| WO2022123381A1 (ja) * | 2020-12-07 | 2022-06-16 | 株式会社半導体エネルギー研究所 | 発光デバイスの製造装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3948082B2 (ja) * | 1997-11-05 | 2007-07-25 | カシオ計算機株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
| JP4578026B2 (ja) * | 2001-07-25 | 2010-11-10 | 大日本印刷株式会社 | エレクトロルミネッセント素子の製造方法 |
| JP3915734B2 (ja) * | 2003-05-12 | 2007-05-16 | ソニー株式会社 | 蒸着マスクおよびこれを用いた表示装置の製造方法、ならびに表示装置 |
| WO2006054421A1 (ja) * | 2004-10-28 | 2006-05-26 | Sharp Kabushiki Kaisha | 有機エレクトロルミネセンスパネル及びその製造方法、並びに、カラーフィルタ基板及びその製造方法 |
| JP4293467B2 (ja) * | 2006-09-28 | 2009-07-08 | 国立大学法人京都大学 | 有機材料装置の製造方法 |
| JP2009049001A (ja) * | 2007-07-20 | 2009-03-05 | Canon Inc | 有機発光装置及びその製造方法 |
-
2012
- 2012-08-08 JP JP2012176006A patent/JP6168742B2/ja active Active
- 2012-08-24 US US13/594,560 patent/US8575835B2/en not_active Expired - Fee Related
- 2012-08-29 TW TW101131327A patent/TW201314989A/zh unknown
- 2012-08-29 KR KR1020120094711A patent/KR20130025821A/ko not_active Ceased
- 2012-08-31 CN CN201210318623.4A patent/CN102983281B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013065830A (ja) | 2013-04-11 |
| CN102983281A (zh) | 2013-03-20 |
| CN102983281B (zh) | 2015-11-18 |
| JP6168742B2 (ja) | 2017-07-26 |
| US20130057142A1 (en) | 2013-03-07 |
| US8575835B2 (en) | 2013-11-05 |
| KR20130025821A (ko) | 2013-03-12 |
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