TW201314803A - 用於多重回流應用之低空洞焊接 - Google Patents

用於多重回流應用之低空洞焊接 Download PDF

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Publication number
TW201314803A
TW201314803A TW101119637A TW101119637A TW201314803A TW 201314803 A TW201314803 A TW 201314803A TW 101119637 A TW101119637 A TW 101119637A TW 101119637 A TW101119637 A TW 101119637A TW 201314803 A TW201314803 A TW 201314803A
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Taiwan
Prior art keywords
solder
heat sink
reflow
die
assembly
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TW101119637A
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English (en)
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TWI564979B (zh
Inventor
Jordan Ross
Amanda Hartnett
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Indium Corp
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    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/046—Surface mounting
    • H05K13/0465—Surface mounting by soldering
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Abstract

本發明提供一種用於在無液體助熔劑之情況下形成金屬焊接之方法，從而產生具有最小空洞且可回流多次而不會使空洞擴展之焊接。可對任一焊料合金實施此方法，且最尤其用於在IC或微處理器或BGA微處理器中施加第一級熱介面。

Description

用於多重回流應用之低空洞焊接
本發明概言之係關於焊料施加，且更具體而言在無液體助熔劑之情況下焊接，一些實施例係關於適於多重回流製程之低空洞化焊接之產生。
本申請案主張於2011年5月31日申請之美國臨時申請案第61/491,757號之權利，其全部內容特此以引用方式併入。
在典型微處理器中，晶片或晶粒係經由導熱介面連接至散熱片，該導熱介面位於晶片背側與散熱片之間。在現今微處理器電子器件中，需要在晶片背側與散熱片之間具有高度導熱介面，其可包括整合式散熱片(I.H.S或integrated heat spreader)或蓋。隨著具有更多BGA(球柵陣列)處理器之電路之發展，利用液體助熔劑之習用銦焊料製程以及由基於聚合物之熱介面材料(TIM)(例如相變材料、凝膠、熱油脂或聚合物焊料混合物)產生之介面存在問題。
在標準焊料TIM應用(sTIM)之情形下，將液體助熔劑分配於晶片上，將焊料預成型件置於晶片上，將液體助熔劑施加至預成型件背面，並放置散熱片且然後使焊料回流。液體助熔劑需要去除金屬氧化物並確保適當潤濕並經由金屬互化物接合至接觸熔融焊料之接合表面。當利用液體助熔劑產生此焊接時，其將具有一些空洞，且彼等空洞內部係液體助熔劑殘餘物。當此液體助熔劑產生之焊接在原始 回流溫度或升高之溫度下經歷隨後數次後續回流時，助熔劑殘餘物受到烘烤並揮發，在大多數情形下此會產生更大之空洞及空洞擴展。出於此原因，利用液體助熔劑產生之焊接通常並不用於多重回流應用，例如具有I.H.S並使用BGA用於後續將焊料附接至PCB之晶片。液體助熔劑可能不利於多重回流應用，此乃因存於後續回流中之助熔劑殘餘物將汽化並導致所存在空洞之面積增加。空洞之熱導率及電導率顯著小於金屬焊料且損害TIM之意義及品質。液體助熔劑亦係問題，此乃因所存在之任一液體助熔劑皆將最可能具有腐蝕性，除非在回流後清潔。在利用簡單酸性蒸氣焊接之情形下，無需清潔且無腐蝕性殘餘物留在基板上或焊料中，假設在曲線中之一些點處已達到甲酸或乙酸之沸點。
焊料視為金屬熱介面材料。金屬介面材料(例如焊料)本質上具有極高熱導率。在銦(IN元素49)之情形下，熱導率為86W/mK。此顯著高於大多數基於聚合物之TIM，其通常具有0.5 W/mK至3 W/mK之體熱導率。在基於聚合物之TIM之情形下，後續回流亦會損害TIM，其使聚合物硬化，並且導致TIM烘乾或排氣，從而增加介面之熱阻。然而，基於聚合物之TIM以機械方式黏著至每一介面，而非同焊料一樣以金屬互化物形式形成物理及化學接合。聚合物TIM中固有之純機械接合物可為額外折衷，此乃因此等接合物亦可含有空洞，從而增加已具有低熱導率之介面之熱阻。
本發明之一些實施例提供可經歷多重回流且不降解之焊接。在將微處理器附接至IC之前，此等焊接可用於該微處理器之內部封裝。各實施例提供非液體助熔劑方法，其中將使用助熔劑蒸氣自基板及焊料去除氧化物以便可製造最小空洞化且無助熔劑截留於少數所存在空洞中之焊接。此將稱為金屬直接TIM或mdTIM。本申請案可用於微處理器焊料TIM施加或任一其他需要具有低空洞且無液體助熔劑之焊接之施加。此方法亦可用於具有不同熔點之回流多重焊料層，亦稱為逐步焊接。逐步焊接之習用方法係以高溫焊料開始且然後漸進地用更低溫度之焊料焊接更多個層。此方法習用於避免上一焊料層熔融。在一些實施例中，本文所揭示方法能夠首先使用低熔點焊料並以更高溫度漸進回流。此可稱為「反向逐步焊接」。
根據本發明之各實施例，提供在無液體助熔劑之情況下形成金屬焊接之方法，從而產生具有最小空洞且可回流多次而無空洞增大之焊接。可對任一焊料合金實施此製程，且最尤其用於在IC或微處理器或BGA微處理器中施加第一級熱介面。
揭示產生可經受多重回流而無空洞增大之金屬焊接之技術。所論述方法係針對任一類型焊料而言，更尤其此方法用於銦焊料或基於銦之合金。測試亦已顯示此技術亦可用於含鉛及無鉛錫合金。此製程之部件包括焊料預成型箔(亦稱為「預成型件」)、能夠以輸送法散發甲酸蒸氣及氮 氣之回流爐及兩個可焊接表面。在大多數情形下，接合線厚度或焊接後介面厚度為4至12密爾視為最佳。在隨附實施例中，將發現達成此焊接之工藝流程以及使預成型件變形或開裂以允許甲酸蒸氣進入介面以去除金屬氧化物並驅逐來自即時環境之氧氣之方法。
根據本發明之實施例，一種方法包含形成總成，其包含第一組件、第二組件及安置於第一組件與第二組件之間之焊料預成型件，其中未在焊料預成型件與第一或第二組件之間分配液體助熔劑；並在氮氣及甲酸蒸氣存在下回流焊接該總成以形成經焊接總成。
結合附圖自以下詳細說明將明瞭本發明之其他特徵及態樣，該等附圖以實例方式圖解說明本發明實施例之特徵。本發明內容不欲限制本發明之範疇，本發明之範疇僅由本文隨附申請專利範圍來界定。
參照以下各圖詳細地闡述本發明之一或多個不同實施例。該等圖式僅出於圖解說明之目的而提供且僅繪示本發明之典型或實例性實施例。提供此等圖式以便於讀者對本發明之理解且不應視為對本發明之廣度、範疇或適用性之限制。應注意，出於清晰及易於圖解說明之目的，此等圖式未必係按比例繪製。
根據本發明之各實施例，提供在無液體助熔劑之情況下形成金屬焊接之方法，從而產生具有最小空洞且可回流多次而無空洞增大之焊接。可對任一焊料合金實施此製程， 且最尤其用於在IC或微處理器或BGA微處理器中施加第一級熱介面(TIM1)。
圖1A圖解說明本發明實施例之總成堆疊及層。堆疊100包含散熱片、整合式散熱片或蓋101(統稱為散熱片(「heat spreader」或「spreader」))。可焊接表面102係安置於散熱片101下側。在一些實施例中，可焊接表面102包含Ni、Ag、Cu或其他常見可焊接表面，例如化學鎳浸金(Electroless Ni Immersion Gold,ENIG)。在一些情形下，Ni可能為難焊接表面，故利用液體助熔劑之習用焊接通常在散熱片上放置金閃鍍氧化物障壁之犧牲障壁層。在一些實施例中，當利用簡單羧酸蒸氣焊接時，若符合可接受空洞標準，則在表面102上可無需金或銀氧化物障壁層。在其他實施例中，可將金或銀障壁層施加至表面102-例如，對於最小空洞含量而言。
總成100進一步包括基板106，其附接至處理器晶粒105。舉例而言，可在上游以覆晶焊料總成附接晶粒105，其中使焊料凸塊回流但然後囊封於底部填充物或環氧樹脂中。在其他實施例中，可使用其他將處理器晶粒105附接至基板106之習用方法。在一些實施例中，將複數個焊料凸塊108安置於基板106之底部表面上。處理器晶粒105之背側具有第二可焊接表面104。在一些實施例中，可焊接表面104在介面之晶片側上包含金屬化層。舉例而言，儘管焊料可潤濕晶片105，但中間金屬層通常較佳。
總成100進一步包含焊料預成型件103，其安置於兩個可 焊接表面102與104之間。預成型件103及總成100經組態以提供自總成外部至位於預成型件103與表面102及104之間之介面的路徑107。在回流期間，簡單羧酸蒸氣(例如甲酸蒸氣)係存於回流室109中。路徑107為蒸氣到達預成型件103及介面提供途徑。在回流操作期間使用蒸氣來分離氧化物層，使金屬-氧化物鍵斷裂以使無金屬堆疊接合在一起。在一些實施例中，回流室109可為生產線上輸送爐之室。在其他實施例中，可使用任一類型焊接爐。在其他實施例中，焊料預成型件103可補充或增補有分配於觸點102、104中之一者或兩者上之實體積焊料。
在一些實施例中，該總成包含複數個焊料接觸點108，其安置於基板106下側。在一些實施例中，該複數個焊料接觸點108包含耦合至金屬化觸點之焊料接觸點柵格。焊料接觸點可包含焊料球、半球、柱、凸塊或任一其他用於IC附接之焊料接觸點。在一些實施例中，在焊接預成型件103之前，焊料接觸點108係存於總成100上。在其他實施例中，在將散熱片101附接至晶粒105及基板106後提供焊料接觸點108。
圖1B圖解說明呈接合態之總成。自所圖解說明之堆疊得到之總成包含晶粒105，其經由焊料熱介面103接合至I.H.S.101。由於未使用焊料膏糊且使用簡單羧酸蒸氣來溶解氧化物層，故總成中無液體助熔劑殘餘物。在蓋附接製程期間，呈固態之預成型焊料建立總成之接合線。因此，所得總成可經歷後續回流製程而無排氣或其他常見於 與液體助熔劑一起施加之焊料之後續回流中之缺陷。因此，即使總成將經歷後續高溫回流，焊料103亦可為低溫焊料，例如銦或銦合金。因此，基板106可為BGA，可利用隨後更高溫度之回流製程(舉例而言，使用無鉛焊料)將其附接至板。在回流期間對介面施加一些力可有助於確保良好焊接。然而，力過大會將所有焊料103擠出介面。在一些實施例中，在回流期間可使用夾具或夾子來產生支座。當焊料回流經過其時，其熔融並變成液體。因此，若當其熔融時散熱片101正停留於預成型件103之頂部上，則其可將所有焊料擠出介面。夾具可經產生以輕微向下推動散熱片，但亦可將夾具施加至介面間隙以確保形成經界定接合線。在一些實施例中，夾具可作為晶片封裝之一部分保留，以防止在後續回流期間破壞TIM介面。在蓋附接製程期間亦可使用焊料預成型件103來產生支座間隙。在將焊料預成型件103熔融之前，總成可經歷預先蓋密封固化製程。
圖1C及1D圖解說明在根據本發明實施例實施之預先蓋密封固化製程之各階段期間之總成。在圖1C中，已將蓋密封材料110分配於散熱片101與基板106之間。蓋密封材料110經分配以維持環境至預成型件103及晶粒105之氣體通路。舉例而言，下文圖6A-6D圖解說明各種分配蓋密封材料110之圖案。蓋密封材料110稍厚於晶粒105及預成型件103，從而在散熱片101與晶粒105之上表面之間建立接合線B 109。
在圖1D中，已將一或多個夾子113施加至總成。夾子113之力112使散熱片101及基板106連在一起。從而壓縮蓋密封材料110並迫使預成型件103接觸散熱片101。藉此建立最終接合線111。因此，可藉由針對期望參數建造預成型件103厚度來建立接合線。使夾子113就位，在低於預成型件103熔融溫度之溫度下固化蓋密封材料110。在固化後，蓋密封材料110實質上不可壓縮且接合至散熱片101及基板106。因此，經固化蓋密封將散熱片101與基板106以接合線距離111固定。因此，在回流期間，預成型件103不處於壓力下，且將不流出晶粒105。在其他實施例中，可使用其他用於在蓋固化期間向總成施加壓力之系統。另外，在回流期間，可去除夾子113以減少熱質量或可使其留在原位而不會影響焊接製程。
在其他實施例中，可未在焊接之前使用蓋密封製程將散熱片101附接至基板106。未利用蓋預固化之實施例圖解說明於圖1E中。在此實施例中，將墊片或其他夾具114插入散熱片101與基板106之間以建立期望接合線111。在又一些實施例中，可將墊片或夾具114與夾子113整合在一起。
圖2A圖解說明本發明實施例之工藝流程。在步驟201中，對封裝進行預組裝。在一些實施例中，封裝包含具有金屬化晶片之基板、焊料預成型件及具有可焊接金屬化之散熱片，且組裝封裝201包含實施針對圖1C及1D所述之蓋固化製程。
在步驟202中，將經預組裝之裝置置於輸送爐中。在一 些實施例中，若未提前實施蓋密封之預固化，則可將砝碼或力置於散熱片頂部以迫使散熱片朝向晶粒。若未實施預固化，則在蓋密封固化期間可使用預成型件厚度作為支座。藉由針對精確期望接合線來建造回流前預成型件之厚度，在散熱片固化期間可將砝碼或力施加至散熱片。只要固化溫度不超過焊料預成型件之熔點，當力向下推動散熱片時，散熱片之底部將觸及預成型件高度並建立接合線。然後封裝蓋密封將以接合線厚度固化以使得後續回流將無需夾子及建立期望接合線。
重要的是，氮氣及甲酸蒸氣可到達焊料預成型件及其介面。在一些實施例中，僅拐角需要用聚合物密封且產生空氣間隙或甲酸蒸氣經過之間隙。亦可對孔或間隙實施機械加工或將其整合至散熱片中以協助此製程。
在步驟203中，回流發生在呈區型面之爐中。在此實施例中，基於所使用焊料，該爐之型面分為若干個區。分區爐提供吹掃氣體及氧化物溶解蒸氣或氣體。吹掃氣體向回流爐中提供惰性氣氛(即，無氧氣)且可包含氮氣或其他惰性氣體，例如氬氣。氧化還原蒸氣或氣體可包含甲酸蒸氣或其他氧化物還原氣體，例如簡單羧酸蒸氣。回流製程203之步驟204包括足以分解氧化物還原氣體之溫度。舉例而言，在200℃下，甲酸分解成一氧化碳或二氧化碳及水。若氧化物還原氣體分解溫度低於預成型件之熔融溫度，則回流製程203進一步包括高於預成型件之熔融溫度之溫度區。在一些實施例中，可使用純銦作為熱介面材 料。對於純銦焊接而言，建議液相線階段曲線之峰溫度為200℃。銦在157℃下熔融，但曲線峰達到200℃，從而在一個步驟中使銦回流並分解所有酸蒸氣。在步驟205中，爐進入冷卻區且在冷卻後，總成離開爐。由於在步驟204期間氧化物還原氣體已分解成氣體，故無殘餘物剩餘且無需清潔。
圖2B圖解說明根據本發明實施例實施之回流曲線之更詳細工藝流程。在此實施例中，回流製程以吹掃爐中氧氣230開始。舉例而言，可以習用方式用諸如氮氣或氬氣等惰性氣體填充爐。此後，經由(例如)鼓泡或其他習用方法向爐中引入去除氧化物之氣體231。然後使爐經受足夠溫度達足夠時間長度以自擬焊接表面去除氧化物232。然後使爐經受足夠溫度233並以分解還原氣體並使焊料回流234。在一些實施例中，焊料可在低於還原氣體分解之溫度下回流。在其他實施例中，氣體可在低於焊料之溫度下分解。因此，步驟233及234可以任一順序實施。另外，可藉由將爐加熱至足夠高溫度以同時分解氣體並使焊料回流來同時實施步驟233及234。此後，使爐冷卻並通風。由於氧化物還原氣體被分解成氣態分子，故在總成上無殘餘物剩餘，且無需清潔經組裝封裝。
圖3顯示可能之製程，其中根據實施例實施之BGA焊料TIM可回流多達6次。第一回流製程301形成基於焊料之熱介面以將晶粒附接至散熱片。第二回流製程302允許使用BGA將封裝附接至板。第三回流製程303可用於BGA再加 工。第三(或第四，在BGA回流加工中實施)回流製程304允許附接表面安裝技術(SMT)組件。在一些實施例中，可使用第五回流305或第六回流306製程來實施額外組件安裝或再加工。由於初始回流製程301使用無液體助熔劑之製程，故後續回流製程302至306可在高於初始製程301之溫度下實施。舉例而言，初始回流301可使用純銦、銦合金或其他低溫焊料預成型件來實施，而後續回流302至306可利用更高溫度之焊料(例如無鉛焊料，如錫-銀-銅(SAC)合金)來實施。此等其他回流製程可在與初始回流301類似或升高之溫度曲線下實施。舉例而言，當在初始回流301中使用熔融溫度小於200℃之焊料材料時，後續回流可在使熔融溫度介於100℃與350℃之間之焊料接觸點回流之溫度曲線下實施。
如上文所論述，為使焊料預成型件利用甲酸蒸氣進行氧化物還原，提供氣體到達預成型件之通路。在一實施例中，紋理化焊料預成型件可促進甲酸蒸氣到達位於預成型件與金屬化區域之間之整個介面。可使用紋理化箔以允許甲酸蒸氣抵達預成型件下方並去除氧化物。圖4圖解說明可用於本發明實施例之預成型件紋理之一些實例。可使用單側預成型件400及雙側預成型件404二者。舉例而言，可使用一側或兩側具有鋸齒圖案401、405、凹槽圖案402、406或正弦圖案403、407之單側或雙側預成型件。紋理化焊料預成型件之其他論述及實例見於美國專利7,593,228，其全部內容特此以引用方式併入。
使甲酸蒸氣到達介面以去除氧化物之另一方法係使用多個預成型件或去除狹縫之預成型件。圖5圖解說明根據本發明之實施例實施之多個預成型件及具有狹縫之預成型件之實例。增加此應用之性能之另一方式係將多個預成型件並排放置且在其之間提供通道，或使預成型件開裂以允許甲酸蒸氣到達介面。對於無法極佳潤濕之金屬(例如銦)而言，此製程可能無用，且可使用單一固體預成型件500。對於流動且潤濕極佳之含Sn、Ag或鉛焊料而言，不存在因兩個或更多個預成型件分離所形成之間隙而產生空洞之問題。舉例而言：可將兩個預成型件501並排放置且其之間具有單一通道；可將四個預成型件502置於四個象限中並形成兩個通道；可使用具有四個通道之通道預成型件503，或可使用具有不同通道長度及位置之多通道預成型件504。
如上文所論述，在一些實施例中，可在將散熱片回流焊接至晶粒之前實施蓋預固化製程。圖6A-6D圖解說明蓋密封材料之各種實例性分配圖案。在圖6A中，材料602係以珠粒形式分配在基板601之拐角處。在固化後，由此在基板601之每一側上皆提供空氣通路603用於使氧化物還原氣體在回流期間接觸預成型件。在圖6B中，材料605之兩個壁係分配於基板604之相對側。由此留下其餘兩側開口606用於使氣體在回流期間進入總成。在圖6C中，基板607幾乎由材料609圍繞。兩側被完全覆蓋，同時在其餘兩側中提供間隙以允許氣體在回流期間進入608總成。在圖6D 中，基板610之四個拐角皆具有材料612，從而形成四個壁，每一者皆具有間隙以允許氣體在回流期間進入611總成。在額外實施例中，可施加蓋密封材料之各種其他圖案，條件係存在使氧化物還原氣體在回流期間進入總成之通路。
儘管上文已闡述本發明之各實施例，但應瞭解，該等實施例僅係以實例方式給出而非具有限制性。同樣，各圖示可繪示本發明之一實例性建構或其他組態，藉此幫助理解本發明中可包括之特徵及功能。本發明不限定於所圖解說明之實例性架構或組態，而可使用各種替代架構及組態來實施期望特徵。實際上，熟習此項技術者應明瞭可如何實施替代功能、邏輯或實體分區及組態來實施本發明之期望特徵。此外，可將除本文中所繪示之構成模組名稱之外的眾多不同構成模組名稱應用於各種分區。另外，關於流程圖、操作說明及方法請求項，除非上下文指示，否則本文中所展示之步驟次序不應授權以相同次序來實施各實施例以執行所述功能。
雖然上文係根據各實例性實施例及實施方案來闡述本發明，但應瞭解，在該等個別實施例中之一或多者中所述之各種特徵、態樣及功能並非限於將其以對其之闡述應用於具體實施例，而是可將其單獨地或以各種組合應用於本發明之其他實施例中之一或多者，無論是否闡述了該等實施例且無論該等特徵是否作為所述實施例之一部分展示。因此，本發明之廣度及範疇不應受任一上述實例性實施例限 制。
除非另外明確說明，否則此文件中所用術語及片語及其變化形式應理解為有無限多而非限制性。以前述為例：術語「包括」應理解為意指「包括但不限於」或諸如此類；術語「實例”用於提供所論述之物項之實例性例項，而非其窮盡性或限制性清單；術語「一(a或an)」應理解為意指「至少一個」、「一或多個」或諸如此類；且形容詞諸如「習用」、「傳統」、「正常」、「標準」、「已知」及類似意思之術語不應解釋為將所闡述之物項限制為給定時間段或自給定時間起之可用物項，而應理解為涵蓋現在或未來之某一時間可用或已知的習用、傳統、正常或標準技術。同樣，在此文件提及熟習此項技術者應明瞭或已知之技術之情形下，該等技術涵蓋熟習此項技術者現在或未來某一時間所明瞭或已知之技術。
諸如「一或多個」、「至少」、「但不限於」或類似片語等增大詞及片語在某些例項中之存在不應理解為意指在可無該等等增大片語之例項中意欲係或需要係較窄情形。術語「模組」之使用並不暗示作為模組之部分闡述或主張之組件或功能皆組態於一共同封裝中。實際上，模組之各種組件中之任一者或全部(無論控制邏輯或其他組件)可組合於單個封裝中或單獨地維持且可進一步分佈於多個群組或封裝中或跨越多個位置分佈。
另外，根據實例性方塊圖、流程圖及其他圖解說明來闡述本文所述各實施例。如熟習此項技術者在閱讀此文件後 應明瞭，可實施所圖解說明之實施例及其各種替代方案而不侷限於所圖解說明之實例。舉例而言，不應將方塊圖及其隨附說明理解為授權具體架構或組態。
100‧‧‧總成
101‧‧‧整合式散熱片/蓋
102‧‧‧可焊接表面/觸點
103‧‧‧焊料預成型件/焊料熱介面/固體預成型件
104‧‧‧第二可焊接表面/觸點
105‧‧‧晶粒/晶片
106‧‧‧基板
107‧‧‧路徑
108‧‧‧焊料凸塊/焊料接觸點
109‧‧‧回流室
110‧‧‧蓋密封材料
111‧‧‧接合線距離/接合線
112‧‧‧力
113‧‧‧夾子
114‧‧‧夾具
400‧‧‧單側預成型件
401‧‧‧鋸齒圖案
402‧‧‧凹槽圖案
403‧‧‧正弦圖案
404‧‧‧雙側預成型件
405‧‧‧鋸齒圖案
406‧‧‧凹槽圖案
407‧‧‧正弦圖案
500‧‧‧單一固體預成型件
501‧‧‧預成型件
502‧‧‧預成型件
503‧‧‧通道預成型件
504‧‧‧多通道預成型件
601‧‧‧基板
602‧‧‧材料
603‧‧‧空氣通路
604‧‧‧基板
605‧‧‧材料
606‧‧‧開口
607‧‧‧基板
608‧‧‧氣體
609‧‧‧材料
610‧‧‧基板
611‧‧‧氣體
612‧‧‧材料
B‧‧‧接合線
圖1A圖解說明本發明實施例之總成堆疊及層。
圖1B圖解說明根據本發明實施例實施之經接合總成。
圖1C圖解說明使用預焊接蓋固化之本發明實施例。
圖1D圖解說明在蓋固化後圖1C之實施例。
圖1E圖解說明在回流期間使用夾具建立接合線之本發明實施例。
圖2A圖解說明本發明實施例之工藝流程。
圖2B圖解說明根據本發明實施例實施之回流工藝流程。
圖3顯示可能之製程，其中根據實施例實施之BGA焊料TIM可回流多次。
圖4圖解說明可用於本發明實施例之預成型件紋理之一些實例。
圖5圖解說明根據本發明實施例實施之多個預成型件及具有狹縫之預成型件之實例。
圖6A-6D圖解說明根據本發明實施例將可固化蓋材料施加至基板之各種分配圖案。
該等圖式不欲具有窮盡性或將本發明限於所揭示之精確形式。應瞭解，可以修改及更改方式實踐本發明，且本發明僅由申請專利範圍及其等效內容來限制。
100‧‧‧總成
101‧‧‧整合式散熱片/蓋
102‧‧‧可焊接表面/觸點
103‧‧‧焊料預成型件/焊料熱介面/固體預成型件
104‧‧‧第二可焊接表面/觸點
105‧‧‧晶粒/晶片
106‧‧‧基板
107‧‧‧路徑
108‧‧‧焊料凸塊/焊料接觸點
109‧‧‧回流室
110‧‧‧蓋密封材料
111‧‧‧接合線距離/接合線
112‧‧‧力
113‧‧‧夾子
114‧‧‧夾具
B‧‧‧接合線

Claims (26)

  1. 一種將散熱片附接至晶粒之方法，其包含：將實體積之焊料安置於晶粒與散熱片之間而在該晶粒與該散熱片之間未安置液體助熔劑，其中該晶粒係安裝至基板之一面，該基板在相對面上包含複數個用於焊料附接之金屬化觸點；及在第一溫度曲線下在惰性氧化物還原氣體之存在下回流焊接該總成，以形成能夠在相等或升高之溫度曲線下經歷後續回流製程之封裝。
  2. 如請求項1之方法，其中該回流焊接該總成之步驟發生在回流爐中，且進一步包含：在該回流焊接該總成之步驟之前用惰性氣體吹掃該回流爐；及在該回流焊接該總成之步驟之前將該氧化物還原氣體引入該經吹掃之回流爐中。
  3. 如請求項1之方法，其中該晶粒之背側預先沈積有金屬層以提供用於將該晶粒焊接至該散熱片之表面。
  4. 如請求項1之方法，其中該散熱片係整合式散熱片。
  5. 如請求項1之方法，其中該回流焊接該總成之步驟係使用生產線上輸送爐來實施。
  6. 如請求項1之方法，其中該實體積焊料包含焊料預成型件。
  7. 如請求項1之方法，其中該等惰性氧化物還原氣體包含簡單羧酸或於惰性氣體中攜載之簡單羧酸。
  8. 如請求項7之方法，其中該簡單羧酸係甲酸(methanoic acid,formic acid)、乙酸(ethanoic acid,acetic acid)或其混合物。
  9. 如請求項1之方法，其進一步包含使用焊料接觸點陣列將該經焊接總成安裝至印刷電路板上。
  10. 如請求項9之方法，其中該焊料預成型件包含熔融溫度低於200℃之第一焊料材料，且該等焊料接觸點包含熔融溫度介於100℃與350℃之間之第二焊料材料。
  11. 如請求項10之方法，其進一步包含使該經焊接總成經歷複數個其他回流製程，該複數個其他回流製程具有高於該第一溫度曲線之溫度曲線。
  12. 如請求項9之方法，其中該將該經焊接總成安裝至該印刷電路板上之步驟係使用高於該第一溫度曲線之溫度曲線來實施。
  13. 如請求項10之方法，其中該第一焊料材料係純銦或銦合金。
  14. 如請求項13之方法，其中該第二焊料材料係無鉛焊料材料。
  15. 如請求項1之方法，其進一步包含：使用蓋密封固化製程將該散熱片附接至該基板；及在該固化製程期間對該散熱片施加力，且其中該焊料預成型件具有預定厚度以在回流後提供與最終接合線大致相同之期望接合線或支座高度。
  16. 如請求項15之方法，其中該力係使用砝碼或夾子來施 加。
  17. 如請求項15之方法，其中該蓋密封固化製程並未氣密性密封該實體積焊料。
  18. 如請求項1之方法，其中該散熱片包含沒有貴金屬層之金屬化層。
  19. 如請求項1之方法，其進一步包含將夾具插入該散熱片與該晶粒之間以在該回流焊接步驟期間維持預定支座高度。
  20. 如請求項19之方法，其進一步包含在該回流焊接步驟期間迫使該散熱片朝向該晶粒。
  21. 如請求項1之方法，其中該實體積焊料具有毗鄰該散熱片或該晶粒之紋理化表面。
  22. 如請求項1之方法，其中該實體積焊料具有毗鄰該散熱片之第一紋理化表面及毗鄰該晶粒之第二紋理化表面。
  23. 如請求項1之方法，其中該實體積焊料係由至少一個通道間隔開之複數個焊料預成型件中之一者。
  24. 如請求項1之方法，其中該實體積焊料包含複數個自該體積中心朝向該體積之周邊延伸之狹縫，其中該等狹縫經組態以在該回流焊接製程期間閉合而不形成空洞。
  25. 如請求項1之方法，其進一步包含不在後續回流應用之前清潔該經焊接總成。
  26. 如請求項1之方法，其中該第一回流曲線包括足以分解該氧化物還原氣體之溫度。
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