TW201304093A - 至少部分地埋置於層體結構內之微型彈簧及其製造方法 - Google Patents

至少部分地埋置於層體結構內之微型彈簧及其製造方法 Download PDF

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TW201304093A
TW201304093A TW100133685A TW100133685A TW201304093A TW 201304093 A TW201304093 A TW 201304093A TW 100133685 A TW100133685 A TW 100133685A TW 100133685 A TW100133685 A TW 100133685A TW 201304093 A TW201304093 A TW 201304093A
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microspring
layer
layer structure
substrate
spring
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TW100133685A
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TWI553800B (zh
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Eugene M Chow
Eric Peeters
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Palo Alto Res Ct Inc
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    • GPHYSICS
    • G01MEASURING; TESTING
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    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • GPHYSICS
    • G01MEASURING; TESTING
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Abstract

至少一個微型彈簧已被鋪設一層體結構於其上以便可提供:在處理及晶圓加工過程中之機械防護、一彈簧分隔層、介於彈簧與基底間之固定的增強、在彈簧偏移期間之縫隙擋塊的提供、及濕氣與污染物之防護。一已完全形成之層體結構可被鋪設在此微型彈簧結構上,或一已部分形成之層體結構可被鋪設在此微型彈簧結構上,然後被固化或硬化。此微型彈簧之尖端部可刺穿此層體結構並露出以供接觸,或可被埋置在此接觸結構之內。此層體結構可保留在最終微型彈簧結構中之適當位置處,或可被全部或部分地移除。此層體結構可作為光微影技術圖案化之材料,其被圖案化並蝕刻以便將此結構部分或全部地移除,藉此形成諸如用於此微型彈簧之縫隙擋塊的額外結構元件。

Description

至少部分地埋置於層體結構內之微型彈簧及其製造方法
本發明係概括地關於以光微影技術圖案化之彈簧接觸體,且更具體地係關於一個或多個被埋置在一層體結構中之鬆釋彈簧。
光微影技術圖案化之彈簧裝置(本文中稱為「微型彈簧」)已被開發,例如製造低成本之探針卡,並提供多個積體電路間之電氣連接。此類微型彈簧已被揭示並敘述,例如美國第5,914,218號專利。微型彈簧通常具有微米等級之長形金屬結構的自由(懸臂)部,而此自由部則從一被直接或間接地固定於一基底上之固定部適當處向上彎曲。
此微型彈簧係由一已建置應力之金屬薄膜(亦即一被製成具有應力差之金屬薄膜,以便使其下部具有比其上部更高之內在壓縮應力)所構成,而此金屬薄膜至少部分地被形成於一鬆釋材料層上。此微型彈簧在其一近側固定部處與該基底(或中間層)相繫接。此微型彈簧另包括一遠側尖端部,其在位於此尖端部下方之鬆釋材料被移除(例如藉由蝕刻)或其被以其他方式被鬆釋時朝遠離該基底方向彎曲。
應力差藉由多種技術中之一者而被產生於該彈簧材料中。根據一種技術,不同材料被沉積在多個層中,而各個層都具有一所要之應力特性,例如一被形成於一壓縮層上之拉伸層。根據另一種技術,一個單層係藉由在該層被沉積時改變製造參數而具有一內在之應力差。此彈簧材料典型地係一種金屬或金屬合金(例如鉬、鉬鉻、鎢、鎳、鎳鋯、銅),且典型地針對其能力被選定以維持大量之內部應力、導電性、及固有強度。微型彈簧典型地係藉由利用習知之光微影技術而被製成,以便允許此諸微型彈簧與其他裝置之整合,以及被形成於一共同基底上之互連。確切地,此類裝置可在諸電子電路及/或元件已被或被形成之時被建構在一基底上。
形成已建置應力之微型彈簧的程序有助於具有多個平面外接觸點之裝置陣列的形成,而此諸裝置最初被形成於該平面中。線性及2-d陣列可因此而被產生。除此之外,多個已建置應力之微型彈簧能以一重疊關係被形成,使得例如一在下方之已建置的應力微型彈簧提供結構支撐給一在上方之已建置應力微型彈簧,如美國第7,550,855號專利中所揭示者。
微型彈簧供應廣泛範圍之運用,諸如探針卡、與積體電路、電路板、與電極陣列之電接合,及用於產生其他裝置,諸如電感器、可變電容器、掃描探針、及激勵鏡。例如,當被使用在一探針卡用途中時,一微型彈簧之自由部的尖端會被導引至與一被形成於一積體電路上之接觸墊相接觸,且信號會經由該探針卡而被傳送於此積體電路與測試設備之間(亦即利用此微型彈簧作為一電接觸件)。
典型地,由多個微型彈簧所組成之陣列配備有一根據此陣列之用途所選定之端對端間隔。例如,為了探針測試,此端對端間隔將會與位於正測試中之裝置上的諸接觸墊、諸導線或類似者之間隔相匹配。第18圖係一由多個鬆釋自一基底處之微型彈簧所組成之陣列100的顯微照片。
微型彈簧通常終止於一尖端,而當此微型彈簧在平面狀態下被圖案化時,此尖端之形狀可用光微影技術予以控制。在某些運用中,此微型彈簧具有一種可物理地穿過一氧化物層之尖端外形(例如一頂點),而此氧化物層可能形成在其上將達成電氣接觸之平面上。儘管可同樣地運用許多不同之尖端形狀,但一微型彈簧102之範例如第19圖中之平面圖所示般地具有一固定部104及一被形成可將一諸如氧化物之層刺穿的尖端106。
為可提供一與將被接觸之表面間的可靠接觸,此微型彈簧必須提供一相當高之接觸力(此力係由彈簧所作用以便抵抗一從將被接觸之表面處以相反方向所作用之力)。此在許多必須以該頂點穿過一氧化物層之運用中尤為事實。例如,一些探測及封裝用途必須在有一尖端與將被接觸之結構間具有一大約50-100mg之接觸力。
一般之微型彈簧結構及其運用所存在的一個問題在於:一旦被鬆釋,彈簧易於在一沿著其長度之點處或其與基底相連接(固定)之點處破壞。微型彈簧可因超過其彈性極限之垂直壓縮而被破壞。雖知較薄之彈簧可容納較大之垂直偏轉,但其卻呈現較低之彈性係數,此意謂此諸彈簧對一些運用而言無法提供足夠之反作用力以便利如穿過一氧化物層。較厚之微型彈簧可抵抗較大之作用力,但卻知其比薄彈簧更易損壞,且易於彎曲超過其彈性限。一種減小損壞風險(至少對厚微型彈簧而言)之作法將是在此微型彈簧之一部分鬆釋部下方形成多個隙擋。然而,形成此諸縫隙擋塊將需要多個額外之微影製程步驟、額外之材料,且在防止破壞上之效果仍然有限。
微型彈簧易可能由於作用在其諸側處之諸側向力而導致破壞,而此諸側向力會扭轉該彈簧並經常導致在接近固定處之破壞。此諸力可在微型彈簧結構之製造與處理,將此微型彈簧結構放置入夾具、夾盤或其他用於額外加工、校準、組裝等之夾持器內之過程中被作用。此導致一在操作多個微型彈簧陣列時必須運用特別之處理預防措施與技術之需求。例如,無法用標準接觸真空棒在無損壞一個或多個微型彈簧之重大風險下固持住一在其上已形成一微型彈簧陣列之晶圓。同樣地,一在其上已形成一微型彈簧陣列之晶圓將無法被維持成反置於夾盤上,如同此晶圓在傳統上所作且為必需進行之背側拋光。
光抗蝕劑目前被用以暫時地塗敷於微型彈簧上並在圖案化期間防護此諸微型彈簧。其可簡單的在鬆釋之後於此諸微型彈簧上只留下光抗蝕劑或至少其一部分,以便提供諸各別彈簧額外之結構強度。然而,此須承受昂貴之濕式加工程序、被鬆釋微型彈簧之加工程序、及其他增加成本與損壞微型彈簧風險之因素。此外,此光抗蝕劑並不適用於與焊接加工程序相關之較高溫度。
因此,本發明係有關於一種結構及製造此結構之方法,其賦予改良微型彈簧之物理防護以便可防止機械損壞。額外優勢包括但不限於:提供一彈簧分隔層、強化彈簧與基底間之固定、在彈簧偏移期間提供一縫隙擋塊、及對濕氣與污染物之防護。
根據本發明之一實施態樣,至少一被垂直配置之微型彈簧被形成在一基底上。此微型彈簧包括已建置應力之外形,以便使諸微型彈簧從其所座落之基底處鬆釋後會由於前述之應力外形而呈現一凹面外形。此微型彈簧包括一固定段及一包含一尖端之自由(鬆釋)段。一層體結構可被鋪設或形成於此微型彈簧結構上,使此微型彈簧之一部分被埋置在此層體結構,且另一與此微型彈簧之尖端相鄰的部分會露出。
此層體結構可被預先形成,且該微型彈簧之尖端在層體結構被放置在該微型彈簧結構上時可刺穿此層體結構,或者此層體結構可被形成並硬化或固化於該微型彈簧結構上。此層體結構可在使用該微型彈簧時保留於適當位置上,或可被全部或部分地移除。
此層體結構可具有一厚度,以便使其在被鋪設或形成於該結構上時,此微型彈簧之一部分可穿過其中而伸出,並因此而露出以供接觸。或者,此層體結構可被鋪設成使得該微型彈簧被完全地埋置在其中。此微型彈簧結構接著可在該微型彈簧被保護於層體結構內之下被處理並進一步加工。一旦完成處理及/或加工程序,此層體結構可被部分或完全地從該微型彈簧結構處移除,至少留下被露出之微型彈簧以供接觸。
此層體結構可為一均質體,或其本身可由兩層或複數層所構成。在此由複數層所構成之層體結構之情形中,該複數層可維持被固定於該微型彈簧結構上,或將一層或多層移除,例如,在處理及/或加工該結構後,以便藉此至少露出該微型彈簧之尖端以供接觸。
此層體結構可為一能用光微影技術圖案化之材料。一旦被形成,此層體結構於是被圖案化及蝕刻以移除部分或全部該結構。在將此層體結構的一部分留下之情形中,此部分可保護該微型彈簧之被埋置的那部分及/或形成一可協助抵擋該彈簧過度偏轉(亦即非彈性彎曲)之縫隙擋塊。
此層體結構可形成一遮罩,其可在微型彈簧尖端區域上選擇電鍍或沉積諸如焊料之材料。或者,此層體結構可形成一遮罩,其可用於微型彈簧之尖端的蝕刻、清潔、或其他加工程序。在各情形中,此層體結構可保留在適當位置上作為該已完成之微型彈簧結構的一部分,或可在完成該結構之前就先被移除。
因此,根據本發明之一實施態樣,一種微型彈簧結構被提供成包括:一基底;至少一微型彈簧,其被形成於此基底上;及一層體結構,其被形成於此基底上,以致使該微型彈簧被至少部分地埋置在該層體結構內。根據本發明之另一實施態樣,一用於製造一微型彈簧結構之方法被提供成包括:形成一微型彈簧於一基底上;及形成一層體結構於此基底上,以致使該微型彈簧被至少部分地埋置在該層體結構內。
以上係本發明之許多獨特的實施態樣、特徵及優點的摘要說明。然而,此摘要說明並非詳盡無遺的。因此,本發明的這些及其他實施態樣、特徵及優點將可由參閱以下詳細說明與所附圖式以及對照考量本文中所提供之申請專利範圍而變得更加明顯。
在本案所附圖式中,同樣的元件符號在各不同圖式之間代表同樣的元件。雖然用以說明,但諸圖式並未依比例繪製。
在此首先指出,凡熟知之起始材料、處理技術、組件、設備及其他細部之說明均只被摘要化或被省略,藉此避免不必要地模糊了本發明之細節。因此,本案將針對非為習知之細節提出申請以便建議或指定與這些細節相關之選擇。
第1圖所示係一微型彈簧結構10之一實施例的側視圖。雖然結構10包括複數個微型彈簧,但此諸微型彈簧中僅一微型彈簧12被顯示。微型彈簧12包括一自由部14及一被固定於一基底18(例如玻璃、矽、石英等)上之固定部16。在形成微型彈簧12之前,一介電層20被形成於基底18之表面上,且一開口22被形成於此介電層中。微型彈簧12被形成介電層20上,以致使其可經由開口22而被連接至一接觸體24,其例如被形成於基底18之一通孔26內。微型彈簧12與接觸體24之間的連接可提供其間之電氣相互連通,及提供進一步將微型彈簧12牢固於基底18上之物理連接。除此之外,微型彈簧12可僅在接觸體24處被連接至基底18。在其他實施例中,在有或沒有分離之電氣接觸下,微型彈簧12可被形成並固定於一本身被繫接於基底18處之分離固定件(未示於圖)上。亦可形成多層之疊置微型彈簧,諸如前述之美國第7,550,855號專利中所揭示者。
微型彈簧12係由一可彈性變形之材料所製成,此材料諸如鉬鉻(MoCr)合金、鎳鋯(NiZr)合金、或許多種適合於形成微型彈簧之金屬或合金中之任一者,諸如鉬(Mo)、鉬鉻(MoCr)、鎢(W)、鎳(Ni)、鎳鋯(NiZr)、銅(Cu)、鑽石或其他合金、非金屬、氧化物、氮化物或有機材料。用以構成微型彈簧12之材料較佳地係為可導電材料,儘管其可由一非傳導性或半傳導性材料所構成。如果是由一種非傳導性或半傳導性材料所構成,則微型彈簧12可被塗敷或電鍍以一導電材料(未示於圖),或被部署在不需要導電接觸之用途中。
如所熟知者,微型彈簧12起初被形成在一大略與基底18之表面成平行之平面中。此形成典型地係藉由本藝中所熟知之光微影技術。在微型彈簧12中之內應力沿著此微型彈簧之垂直截面而改變。許多技術中之一種(諸如蝕刻底切)被用來鬆釋微型彈簧12之自由部14(包含尖端28),且微型彈簧12中之內應力使得尖端28從平面處被拉起,藉此而形成一如第1圖中所示之凹面微型彈簧。
在一典型之實施例中,尖端28升高至一大約位於層20之表面上方10-250μm的高度H。微型彈簧12之寬度典型地係在5-100μm的範圍中。
在某些實施例中,微型彈簧12被形成具有一如第2圖(此微型彈簧12之平面視圖)所示之尖頭狀尖端28。此尖頭形狀有助於刺穿氧化物或其他層以利進行探測與接觸用途。此尖頭形狀亦有助於鋪設一防護結構,這將在下文中進一步說明。許多其他尖端形狀與設計已被熟知且亦可被運用在本發明中。
在一第一實施例中,一旦自由部14被鬆釋,一防護結構(其在本實施例中係一薄的層體結構30)被鋪設在結構10之上表面上。第3圖顯示被引導至位於結構10上之位置中的層體結構30。第4圖顯示被牢固在結構10上之適當位置處之層體結構30。此層體結構30可由多種意欲被永久鋪設在結構10上之不同材料所構成。矽膠是一範例材料。矽膠具有相當之柔軟性及順形性,而此性質將可由下列之說明中察知係為有利的。另一種候選材料係在市場上被熟知為Gel-Film者,而此一產品可獲自Delphon工業公司下屬之Gel-Pak公司(請參考網站如ww.gelpak.com/products/index.cfm?fuseaction=gel-film)。為清楚起見,在此實施例中,結構30被稱為「層體」結構,因為在形成此裝置之過程中,其被鋪設或層壓在已經成型之微型彈簧與基底結構上。層體結構30可由一單一材料構成,或可本身係一由多個材料層所組成之層體。在某些實施例中,層體結構30可藉一載體板片(未示於圖)而被處置,且可在鋪設期間自該板片上轉移下來。層體結構30具有一大約為25μm的厚度T。在此實施例中,此層體厚度T將小於微型彈簧12之高度H,儘管在某些實施例中並非如此,至少在初始時。在其他實施例(例如下文中將被敘述者)中,T可大於H。
層體結構30然後從其背襯上被移除,並被鋪設在結構10之上表面上,以致使微型彈簧12之尖端28刺穿層體結構30。微型彈簧12未受損壞,此乃由於尖端28非常小及相當尖銳且該層體相當柔軟之故。適當之壓力被作用至結構30之上表面32,以致使結構30可大體上順應結構10之頂表面形狀並被良好地座落於其上。一位於與結構10的上表面(例如,微型彈簧12及介電層20之上表面的一部分)相接觸之層體結構30的底表面上之可隨意選用的黏著層34可將層體結構30保留在適當位置上。在一實施例中,結構30有利地可運用一種柔軟且具順形性材料,以便使微型彈簧12在刺穿結構30過程中不會受損,並進一步使結構30可與結構10之非平面狀上表面的一大部分相接觸。
在某些實施例中,較佳地是在鋪設之前先使結構30軟化,例如以便在結構10的表面上提供一更具順形性的覆蓋,藉此可進一步降低微型彈簧12在刺穿結構30時受損之可能性等...。此結構30之軟化可藉由加熱、化學軟化、或其他可能在本藝中已為習知之方法而達成。除此之外,結構30可由一種可固化材料所構成,此材料諸如光固化環氧樹脂或聚合物。最初,結構30以一已部分固化之狀態被鋪設,以致使其可維持其物理結構,但卻充分地柔軟以便可具有順形性,且相當易於被微型彈簧12刺穿等...。一旦被鋪設,結構30之固化即可完成,藉此提供一更硬之主體,而微型彈簧12則被埋置於其中。另外,可在鋪設於結構10上後再被軟化之材料可被使用,以便使其在被放置於結構10上方時可更硬,例如藉此防護微型彈簧12,但其可藉由加熱、化學處理等而被軟化,以便可從結構10與微型彈簧12處被移除。
微型彈簧12之尖端28接著延伸在結構30之上表面32上方一大約等於H-T的距離。露出之尖端28接著可例如被用作一電氣接觸體。
至少一部分微型彈簧12及尤其一部分自由部14因此被配置在層體結構30「內」。此乃層體結構30之一用物理方式來支撐微型彈簧12之功能。此支撐在當具有微型彈簧12之晶圓被處理時可為所有方向上之強度,在當微型彈簧12與一位於其上之裝置成彈簧接觸時可為偏轉方向上之強度,諸如此類。因此,層體結構30應大致上與微型彈簧12之表面相接觸,而在其之間具有少數的間隙。層體結構30必須具有一些「彈性」或容限以利微型彈簧12之偏轉,同時仍提供此微型彈簧12整體增大之強度。
層體結構30亦可當作一分隔件,其界定一位於介電層20之上表面與一接觸尖端28之結構(未示於圖)的下表面間的最小間隔。另外,層體結構30可提供額外強度給位於微型彈簧12與基底18間之固定件,此部分地由於大的表面接觸面積與兩者的附著力以及由黏著層34所提供之附著力所致。層體結構30另在彈簧偏轉過程中提供縫隙擋塊。當結構30確實可有一些彈性時,材料在極限到達時可抵抗微型彈簧12之近一步偏轉。在此點處,在結構10及與結構10相接觸的裝置之間的最小間隙因此被界定。此外,結構30額外地提供濕氣與污染物屏障,藉此防護一部分微型彈簧12、介電層20、接觸件24等...免於受環境污染與破壞。此外,被埋置於層體結構30內之微型彈簧12的部分被防護以免受諸如電鍍與焊接等之化學處理程序的傷害,而此諸程序在本發明之某些應用中可能是必要的。
第5圖係兩具有尖端28a、28b之微型彈簧12a、12b的顯微照片。微型彈簧12a係自立在基底18上方,而微型彈簧12b則被埋置在一矽膠層體結構30中。諸尖端28a、28b之影像在相對清晰度上之相同性將確認其等在高度上係大約相等的。此確認在本實施例中鋪設一可讓尖端28刺穿之層體結構30會造成一在形成微型彈簧12於其上之表面之上方的尖端高度H,以及一位於一具有厚度T之層體結構上方且大致等於H-T之尖端28的間隔。此外,第6圖係兩分別具有尖端28c、28d之微型彈簧12c、12d的顯微照片,各尖端穿過伸出一矽膠層體結構30。諸尖端28c、28d之影像在相對清晰度上之相同性將確認其等穿過矽膠層體結構30伸出一大約相等之量。因此,鋪設可讓尖端28刺穿之層體結構30的程序可適用於一微型彈簧陣列並且具有大體上一致之結果。
參照第7圖,其說明本發明之另一實施例。微型彈簧12露出在層體結構30之上表面32上之部分(包括尖端28或其一部分)可被電鍍以一適當金屬36,以便改良微型彈簧12之接觸部的性質,包括諸如磨耗、彈簧常數等之物理性質,諸如電阻等之電氣性質等。或者,焊料或類似材料可被鋪設於微型彈簧12露出在層體結構30之上表面32上之部分(包括尖端28或其一部分),以便可獲致類似之結果。可運用其他例如用於強化物理抗磨耗性,用於控制微型彈簧12之彈簧常數等之塗敷,以及例如蝕刻等之進一步加工以便去除氧化或控制尖端18之大小與形狀。在各種情形中,層體結構30可做為一遮罩以便防護微型彈簧12被埋置於其中之部分。更確切地,此相對於微型彈簧12整體可選擇地覆蓋或加工其一部分之特點係一有別於諸如旋轉塗敷及類似者之習知加工程序的重要差異。
層體結構30之鋪設係可逆的,因為其可在不損壞微型彈簧12下被移除。此例如在有必要塗敷或加工一部分位於尖端28附近之微型彈簧12(諸如上述之塗敷與加工處理),以便提供在其他方面不受運動、位置等影響之微型彈簧12時係有用的。第9圖係分別地具有尖端28a、28b之微型彈簧12a、12b在鋪設一矽膠層體結構(未示於圖)並接著移除該層體結構後之微影照片。同樣地,諸尖端28a、28b在影像之相對清晰度上之相同可確認其等在高度上係大約相等。此確認在本實施例中,矽膠層體結構之移除不會顯著損壞微型彈簧。本發明此一實施態樣的另一優點為:在移除此層體結構之過程中,此微型彈簧之尖端可在此程序進行期間同時清除微粒及污染物。
根據本文中所揭示之另一實施例,一層體結構可被放置在微型彈簧結構上並完全地覆蓋此微型彈簧,以便使晶圓可在諸彈簧尖端被防護下被處理及加工等。在一於處理及進一步加工後之時間點處,此層體結構可全部或部分地被移除,以便露出微型彈簧或其一部分。下文中更詳細地說明這些概念。
參照第10圖所示,其中顯示以一厚的防護層體結構42覆蓋一微型彈簧12的第一步驟。如前所述,一旦自由部14被鬆釋,一相當厚之防護層體結構42便會被鋪設在結構10之上表面上。微型彈簧12從介電層20之表面起向上延伸至一高度H。防護層體結構42具有一厚度X,在此X>H。防護層體結構42雖可由多種材料所製成,但應要相當柔軟以便使尖端28可刺穿防護層體結構42之表面,並藉此埋置一部分微型彈簧12於其中而不致損壞微型彈簧12。構成防護層體結構42之材料亦應足夠強固且堅硬,一旦一部分微型彈簧12被埋置於其中,防護層體結構42可提供微型彈簧12物理及環境防護。再者,矽膠係一可符合這些多少有些衝突之條件的材料之範例。
參照第11圖,其顯示結構10以及位於其上適當位置處之防護層體結構42。微型彈簧12整個被埋置在防護層體結構42內。此結構此時可在低損壞微型彈簧12風險下被處理。例如,從背側處加工,基底18現可例如藉由研磨、化學蝕刻等而被變薄,同時微型彈簧12則被防護在防護層體結構42內。如前所討論,某些材料(諸如矽膠)可在鋪設之後輕易地被移除。因此,藉由適當地選擇防護層體結構42之材料,此材料將可在任何成型後處理及加工程序之後被移除,只留下露出之微型彈簧12以供接觸。此外,熱及/或光放射技術可被用以控制防護層體結構42之相對黏著度,此有助於其從結構10上鬆釋。
根據本發明之再一實施例,具有一可使微型彈簧被完全埋置於其中之厚度的防護層體結構本身可由至少兩層所構成。此諸層中之一者用來維持被繫接於微型彈簧結構上,而此諸層中之另一者則用來在處理與進一步加工程序後被移除,此防護層體結構在此期間則防護該微型彈簧。第12圖係此一實施例之範例。如先前所述,一旦自由部14被鬆釋,一相當厚之防護層體結構44被鋪設在結構10之上表面上。雖然第12圖中所示之防護層體結構44包括兩層46、48,但在其他實施例中則可運用多個額外層。此諸層可各由相同之材料所構成,或可由不同之材料所構成,此端視本發明之應用而定。
微型彈簧12從介電層20之表面起向上延伸至一高度H。防護層體結構44之厚度係諸層46、48之各自厚度Y1、Y2的總和。防護層體結構44之總厚度將使得微型彈簧12被完全埋置於其內,亦即Y1+Y2>H。諸層46、48雖可由多種材料製成,但必須將可被尖端28所刺穿以及前述所要防護之程度列入考量。在一實施例中,諸層46之每一者是矽膠且被分離地形成,以致使得可在此兩層間存在一表面能量界限,此有助於其等在鋪設至結構10以及任何必要之處理與加工程序後之分離。在另一實施例中,一鬆釋層47被配置在諸層46、48間,且具足夠之黏著性可讓諸層46、48在鋪設後黏在一起,但亦可協助其後續之分離。在另一實施例中,一熱活化或光活化層初始將諸層46、48黏著在一起,但有必要時可藉用熱或光線促進諸層46、48之分離。
參照第13圖,結構10被顯示具有位在其上適當位置處之防護層體結構44。整個微型彈簧12被埋置於防護層體結構44內。此結構此時可在低損壞微型彈簧12風險下被處理。例如,從背側處加工,基底18現可例如藉由研磨、化學蝕刻等而被變薄,同時微型彈簧12被防護在防護層體結構44內。在任何處理及加工程序後,層48接著可自此結構上被移除,如第14圖中所示,例如利用熱或光線來協助分離諸層46、48。藉由適當選擇諸層46、48的材料,層48可在任何成形後處理與加工程序之後被移除,留下微型彈簧12被埋置在層46內之部分,以及微型彈簧12之其餘被露出以供接觸之部分。
做為上述實施例之一替代型式,結構42(諸如第11圖中所示者),層46及/或層48可為一用於光微影蝕刻技術圖案化之材料。在處理此結之過程中,層48可藉由本藝中之習知技術而被圖案化或蝕刻。此蝕刻可完全地移除層48或者遺留此層48之諸部分於多個經選定的位置中,諸如介於微型彈簧陣列之諸個別微型彈簧間,在微型彈簧12之自由端14下方以便充當一種縫隙擋塊等等。此種縫隙擋塊50之範例被顯示於第15圖中。
根據本發明之另一實施例,一注射腔穴可被形成在一微型彈簧結構上,而一種適當之材料可被注射入此腔穴內以包圍一部分微型彈簧。在形成微型彈簧於其上之介電層的上表面與可埋置微型彈簧尖端於其內並與該介電表面相隔開的材料鑄模結構間可形成此注射腔穴。此實施例被顯示於第16圖中。一旦自由部14被鬆釋,一鑄模結構54,例如藉由停置在一分隔件56上或藉由其他適當之方法而被配置在結構10上。一腔穴58因而被形成於結構10與鑄模結構54之間。一種適當之材料(諸如可固化聚合物)是以液態型式被注射入腔穴58。當一部分微型彈簧12被埋置在鑄模結構54內時,該部分微型彈簧12被遮蔽以免被埋置在注射材料中。此注射材料接著被固化,且鑄模結構54隨後被移去。已完成之結構被顯示於第17圖中,其中一部分微型彈簧12被埋置在已固化聚合物60內,而微型彈簧12之其餘部分則被露出以供接觸。可固化聚合物只是在本實施例中可被運用來埋置一部分微型彈簧12之諸材料中的一種範例。除此之外,可利用現存覆晶封裝方法與設備,藉此降低開發特殊夾具、方法、材料、及類似者之需求,以便支持本文中所揭示之此一實施態樣。
10...(微型彈簧)結構
12...微型彈簧
12a/12b/12c/12d...微型彈簧
14...自由部
16...固定部
18...基底
20...介電層
22...開口
24...接觸體
26...通孔
28...尖端
28a/28b/28c/28d...尖端
30...(層體)結構
32...上表面
36...金屬
42...防護層體結構
44...防護層體結構
47...鬆釋層
46/48...層
50...縫隙擋塊
54...鑄模結構
56...分隔件
58...腔穴
60...已固化聚合物
H...高度
T...厚度
X...厚度
Y1/Y2...厚度
第1圖係一微型彈簧結構之側視圖,此微型彈簧結構包括一形成於介電層上之微型彈簧,而此介電層係由一可構成本發明之一實施例之類型的基底所承載。
第2圖係一具有一可構成本發明之一實施例之類型的尖頭狀尖端之微型彈簧的平面圖。
第3圖係一根據本發明之一實施例所實施之微型彈簧結構的側視圖,而一薄的層體結構正要被鋪設於此結構上。
第4圖係一根據本發明之一實施例所實施之微型彈簧結構的側視圖,而此微型彈簧結構具有一被鋪設於其上之層體結構。
第5圖係兩微型彈簧之顯微照片,左邊者沒有一層體結構,而右邊者則被埋置在一層體結構內,其顯示諸尖端在埋置在層體結構內後之高度大約相等於其在埋置在層體結構內前之高度。
第6圖係兩微型彈簧之微影照片,其各已被埋置在一層體結構內,此顯示兩尖端刺穿該結構一大約相等之量,此證實本發明之程序係可適用於一微型彈簧陣列且具有大體上一致之結果。
第7圖係一微型彈簧結構之側視圖,其說明該微型彈簧藉由利用層體結構作為一電鍍遮罩而進行其尖端之電鍍。
第8圖係一微型彈簧結構之側視圖,其說明該微型彈簧藉由利用層體結構作為一電鍍遮罩而將一焊料球鋪設於其尖端上。
第9圖係兩個微型彈簧在完成鋪設一層體結構且接著移除此層體結構等步驟後之顯微照片,此經由在兩尖端之影像的相對清晰度上之相同性顯示此諸尖端之高度大約相等,且矽膠層體結構之移除不會顯著地損壞諸微型彈簧。
第10圖係一根據本發明之一實施例所實施之微型彈簧結構的側視圖,其中一厚的層體結構正在被鋪設於此結構上。
第11圖係一根據本發明之一實施例所實施之微型彈簧結構的側視圖,而此微型彈簧結構具有一被鋪設於其上之厚層體結構,其中該微型彈簧被完全地埋置在此層體結構內。
第12圖係一根據本發明之一實施例所實施之微型彈簧結構的側視圖,而一厚的多層式層體結構正要被鋪設於此結構上。
第13圖係一根據本發明之一實施例所實施之微型彈簧結構的側視圖,而此微型彈簧結構具有一被鋪設於其上之厚的多層式層體結構,其中該微型彈簧被完全地埋置在此層體結構內。
第14圖係根據本發明之一實施例所實施且如第13圖中所示微型彈簧結構在移除該厚多層式層體結構之一層後的側視圖,其中微型彈簧之尖端被露出以供接觸。
第15圖係一根據本發明之一實施例所實施之縫隙擋塊的側視圖。
第16圖係一根據本發明之一實施例所實施之微型彈簧結構的側視圖,而此微型彈簧結構具有一被安置於其上以形成一腔穴之鑄模結構,且該微型彈簧之尖端部被埋置於此鑄模結構中,以致使一層體結構材料可被導入此腔穴內。
第17圖係根據本發明之一實施例所實施且如第16圖中所示微型彈簧結構在將材料導入該腔穴內,此材料固化,及該鑄模結構被移除後之側視圖。
第18圖係一習知類型之微型彈簧陣列的顯微照片。
第19圖係一具有習知尖頭狀尖端類型之微型彈簧的平面圖。
10...微型彈簧結構
12...微型彈簧
14...自由部
16...固定部
18...基底
20...介電層
22...開口
24...接觸體
26...通孔
28...尖端
H...高度

Claims (10)

  1. 一種微型彈簧結構,其包括:一基底;至少一微型彈簧,其被形成於該基底上;及一層體結構,其被形成於該基底上,以致使該微型彈簧被至少部分地埋置在該層體結構內。
  2. 如申請專利範圍第1項之微型彈簧結構,其中該微型彈簧包括一固定部及一自由部,而該固定部被固定於該基底上,及其中該固定部被埋置在該層體結構內,且該自由部之至少一部分係自該層體結構處延伸並可自由偏轉於該基底上。
  3. 如申請專利範圍第1項之微型彈簧結構,其中該微型彈簧被完全地埋置在該層體結構內。
  4. 如申請專利範圍第3項之微型彈簧結構,其中該層體結構包括複數層,而該微型彈簧包括一固定部及一自由部,該固定部被固定於該基底上並被完全地配置在該層體結構之一第一層中,及該自由部之至少一部分被配置在該層體結構之一與該第一層不同之第二層內,以致使得在移除該第二層時,該自由部被配置成可自由偏轉於該基底上。
  5. 如申請專利範圍第4項之微型彈簧結構,其中該層體結構另包括一被配置在該第一層與該第二層之間的鬆釋層。
  6. 如申請專利範圍第2項之微型彈簧結構,其中該自由部之該部分被電鍍以一電鍍金屬,且該微型彈簧被埋置在該層體結構內之該部分並無該電鍍金屬。
  7. 如申請專利範圍第1項之微型彈簧結構,其中該微型彈簧包括一尖端部,而至少該尖端部具有被鋪設於其上之焊料,且該微型彈簧被埋置在該層體結構內之該部分並無該電鍍金屬。
  8. 如申請專利範圍第1項之微型彈簧結構,其中該層體結構至少部分地係由矽膠所組成。
  9. 如申請專利範圍第8項之微型彈簧結構,其中該層體結構另包括一將該層體結構黏附在該基底上之黏著層。
  10. 如申請專利範圍第1項之微型彈簧結構,其中該層體結構包括一可用光微影技術圖案化之材料,且被圖案化以形成一縫隙擋塊,其鄰近該微型彈簧以便協助防止該微型彈簧在使用期間之過度偏轉。
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8441808B2 (en) * 2010-09-22 2013-05-14 Palo Alto Research Center Incorporated Interposer with microspring contacts
US8686552B1 (en) 2013-03-14 2014-04-01 Palo Alto Research Center Incorporated Multilevel IC package using interconnect springs
US9816800B2 (en) 2013-10-10 2017-11-14 Stretchsense Limited Method of fabrication of laminates of elastic material suitable for dielectric elastomer sensing
US10514391B2 (en) * 2016-08-22 2019-12-24 Kla-Tencor Corporation Resistivity probe having movable needle bodies
KR101877861B1 (ko) * 2017-01-23 2018-08-09 (주)다람기술 검사프로브 제조방법 및 제조장치, 그리고 이에 의해 제조된 검사프로브
US11289443B2 (en) 2017-04-20 2022-03-29 Palo Alto Research Center Incorporated Microspring structure for hardware trusted platform module
TWI706139B (zh) * 2019-10-25 2020-10-01 巨擘科技股份有限公司 金屬探針結構及其製造方法
US11054593B1 (en) 2020-03-11 2021-07-06 Palo Alto Research Center Incorporated Chip-scale optoelectronic transceiver with microspringed interposer
KR102409029B1 (ko) * 2022-04-12 2022-06-14 이시훈 프로브 핀

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6741085B1 (en) 1993-11-16 2004-05-25 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US5783870A (en) 1995-03-16 1998-07-21 National Semiconductor Corporation Method for connecting packages of a stacked ball grid array structure
US5613861A (en) 1995-06-07 1997-03-25 Xerox Corporation Photolithographically patterned spring contact
WO1998011449A1 (en) * 1996-09-13 1998-03-19 International Business Machines Corporation Wafer scale high density probe assembly, apparatus for use thereof and methods of fabrication thereof
US5944537A (en) 1997-12-15 1999-08-31 Xerox Corporation Photolithographically patterned spring contact and apparatus and methods for electrically contacting devices
US5979892A (en) 1998-05-15 1999-11-09 Xerox Corporation Controlled cilia for object manipulation
US6672875B1 (en) 1998-12-02 2004-01-06 Formfactor, Inc. Spring interconnect structures
JPH11337581A (ja) * 1999-04-27 1999-12-10 Nec Corp プロ―ブカ―ド
US6352454B1 (en) 1999-10-20 2002-03-05 Xerox Corporation Wear-resistant spring contacts
US6267605B1 (en) 1999-11-15 2001-07-31 Xerox Corporation Self positioning, passive MEMS mirror structures
US6213789B1 (en) 1999-12-15 2001-04-10 Xerox Corporation Method and apparatus for interconnecting devices using an adhesive
US6794725B2 (en) 1999-12-21 2004-09-21 Xerox Corporation Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources
US6827584B2 (en) * 1999-12-28 2004-12-07 Formfactor, Inc. Interconnect for microelectronic structures with enhanced spring characteristics
US6856225B1 (en) 2000-05-17 2005-02-15 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US6392524B1 (en) 2000-06-09 2002-05-21 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US6396677B1 (en) 2000-05-17 2002-05-28 Xerox Corporation Photolithographically-patterned variable capacitor structures and method of making
EP1292834B1 (en) * 2000-06-20 2005-11-30 Nanonexus, Inc. Systems for testing integrated circuits
US6290510B1 (en) 2000-07-27 2001-09-18 Xerox Corporation Spring structure with self-aligned release material
US6521970B1 (en) 2000-09-01 2003-02-18 National Semiconductor Corporation Chip scale package with compliant leads
US6504643B1 (en) 2000-09-28 2003-01-07 Xerox Corporation Structure for an optical switch on a substrate
US6632373B1 (en) 2000-09-28 2003-10-14 Xerox Corporation Method for an optical switch on a substrate
US6743982B2 (en) 2000-11-29 2004-06-01 Xerox Corporation Stretchable interconnects using stress gradient films
US6534249B2 (en) 2001-02-09 2003-03-18 Xerox Corporation Method of making low cost integrated out-of-plane micro-device structures
US6655964B2 (en) 2001-02-09 2003-12-02 Xerox Corporation Low cost integrated out-of-plane micro-device structures and method of making
US6595787B2 (en) 2001-02-09 2003-07-22 Xerox Corporation Low cost integrated out-of-plane micro-device structures and method of making
JP3724432B2 (ja) 2001-04-19 2005-12-07 株式会社ニコン 薄膜弾性構造体及びその製造方法並びにこれを用いたミラーデバイス及び光スイッチ
US6528350B2 (en) 2001-05-21 2003-03-04 Xerox Corporation Method for fabricating a metal plated spring structure
US6560861B2 (en) 2001-07-11 2003-05-13 Xerox Corporation Microspring with conductive coating deposited on tip after release
DE10149688B4 (de) * 2001-10-09 2004-09-09 Infineon Technologies Ag Verfahren zum Herstellen einer Mikrokontaktfeder auf einem Substrat
US6794737B2 (en) 2001-10-12 2004-09-21 Xerox Corporation Spring structure with stress-balancing layer
US6777963B2 (en) 2001-11-08 2004-08-17 Koninklijke Philips Electronics N.V. Chip-mounted contact springs
US6684499B2 (en) 2002-01-07 2004-02-03 Xerox Corporation Method for fabricating a spring structure
US6668628B2 (en) 2002-03-29 2003-12-30 Xerox Corporation Scanning probe system with spring probe
US7011530B2 (en) 2002-05-24 2006-03-14 Sitaraman Suresh K Multi-axis compliance spring
US6621141B1 (en) 2002-07-22 2003-09-16 Palo Alto Research Center Incorporated Out-of-plane microcoil with ground-plane structure
JP2004259530A (ja) * 2003-02-25 2004-09-16 Shinko Electric Ind Co Ltd 外部接触端子を有する半導体装置及びその使用方法
US20070020960A1 (en) * 2003-04-11 2007-01-25 Williams John D Contact grid array system
US7015584B2 (en) * 2003-07-08 2006-03-21 Xerox Corporation High force metal plated spring structure
US20050017171A1 (en) 2003-07-08 2005-01-27 Btg International Limited Probe structures incorporating nanowhiskers, production methods thereof and methods of forming nanowhiskers
US6998703B2 (en) 2003-12-04 2006-02-14 Palo Alto Research Center Inc. Thin package for stacking integrated circuits
US7400041B2 (en) 2004-04-26 2008-07-15 Sriram Muthukumar Compliant multi-composition interconnects
US7649145B2 (en) 2004-06-18 2010-01-19 Micron Technology, Inc. Compliant spring contact structures
US20060030179A1 (en) 2004-08-05 2006-02-09 Palo Alto Research Center, Incorporated Transmission-line spring structure
US7456092B2 (en) 2004-10-07 2008-11-25 Palo Alto Research Center Incorporated Self-releasing spring structures and methods
US7230440B2 (en) 2004-10-21 2007-06-12 Palo Alto Research Center Incorporated Curved spring structure with elongated section located under cantilevered section
US7166326B1 (en) 2004-12-14 2007-01-23 Palo Alto Research Center (Parc) Method of electroplating stressed metal springs
US7344906B2 (en) 2005-12-15 2008-03-18 Palo Alto Research Center Incorporated Structure and method for releasing stressy metal films
US7426117B2 (en) 2005-12-21 2008-09-16 Xerox Corporation Chip on a board
US20070152685A1 (en) * 2006-01-03 2007-07-05 Formfactor, Inc. A probe array structure and a method of making a probe array structure
US7982290B2 (en) 2006-01-12 2011-07-19 Palo Alto Research Center, Inc. Contact spring application to semiconductor devices

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