TW201303953A - 帶電粒子束繪圖設備及物品製造方法 - Google Patents
帶電粒子束繪圖設備及物品製造方法 Download PDFInfo
- Publication number
- TW201303953A TW201303953A TW101123886A TW101123886A TW201303953A TW 201303953 A TW201303953 A TW 201303953A TW 101123886 A TW101123886 A TW 101123886A TW 101123886 A TW101123886 A TW 101123886A TW 201303953 A TW201303953 A TW 201303953A
- Authority
- TW
- Taiwan
- Prior art keywords
- stage
- substrate
- optical system
- detector
- system housing
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0264—Shields magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011151520A JP2013021044A (ja) | 2011-07-08 | 2011-07-08 | 荷電粒子線描画装置、および、物品の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201303953A true TW201303953A (zh) | 2013-01-16 |
Family
ID=47438864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101123886A TW201303953A (zh) | 2011-07-08 | 2012-07-03 | 帶電粒子束繪圖設備及物品製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8476607B2 (enExample) |
| JP (1) | JP2013021044A (enExample) |
| KR (1) | KR20130006355A (enExample) |
| TW (1) | TW201303953A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI674620B (zh) * | 2013-12-13 | 2019-10-11 | 日商荏原製作所股份有限公司 | 真空磁性遮蔽容器的構造 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9952255B2 (en) * | 2015-10-30 | 2018-04-24 | Texas Instruments Incorporated | Magnetically shielded probe card |
| CN106019854A (zh) * | 2016-07-18 | 2016-10-12 | 无锡宏纳科技有限公司 | 图形可变的电子束光刻机 |
| WO2019211123A1 (en) * | 2018-05-02 | 2019-11-07 | Asml Netherlands B.V. | E-beam apparatus |
| TWI886395B (zh) * | 2021-06-14 | 2025-06-11 | 日商紐富來科技股份有限公司 | 多帶電粒子束描繪裝置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW466542B (en) * | 1999-02-26 | 2001-12-01 | Nippon Kogaku Kk | A stage device and a method of manufacturing same, a position controlling method, an exposure device and a method of manufacturing same, and a device and a method of manufacturing same |
| JP2002184664A (ja) | 2000-12-12 | 2002-06-28 | Canon Inc | 荷電粒子線露光装置及び方法並びにステージ装置 |
| JP2004047170A (ja) * | 2002-07-09 | 2004-02-12 | Hitachi Ltd | 電子線描画装置 |
| JP2005268268A (ja) * | 2004-03-16 | 2005-09-29 | Canon Inc | 電子ビーム露光装置 |
-
2011
- 2011-07-08 JP JP2011151520A patent/JP2013021044A/ja active Pending
-
2012
- 2012-06-27 US US13/534,044 patent/US8476607B2/en not_active Expired - Fee Related
- 2012-07-03 TW TW101123886A patent/TW201303953A/zh unknown
- 2012-07-06 KR KR1020120073645A patent/KR20130006355A/ko not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI674620B (zh) * | 2013-12-13 | 2019-10-11 | 日商荏原製作所股份有限公司 | 真空磁性遮蔽容器的構造 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013021044A (ja) | 2013-01-31 |
| KR20130006355A (ko) | 2013-01-16 |
| US8476607B2 (en) | 2013-07-02 |
| US20130011797A1 (en) | 2013-01-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10002740B2 (en) | Inspection device | |
| US8981323B2 (en) | Charged particle beam apparatus, and article manufacturing method | |
| JP2005249745A (ja) | 試料表面検査方法および検査装置 | |
| US7365456B2 (en) | Positioning apparatus and charged-particle-beam exposure apparatus | |
| WO2007086400A1 (ja) | 試料表面検査方法及び検査装置 | |
| TW201303953A (zh) | 帶電粒子束繪圖設備及物品製造方法 | |
| EP3285281A1 (en) | Exposure system | |
| US9105446B2 (en) | Charged particle beam apparatus | |
| US20140346349A1 (en) | Drawing apparatus, and method of manufacturing article | |
| KR102170152B1 (ko) | 표면 처리 장치 | |
| US20140306123A1 (en) | Stage apparatus, drawing apparatus, and method of manufacturing article | |
| JP5357837B2 (ja) | 露光装置及びデバイスの製造方法 | |
| JP5302934B2 (ja) | 試料表面検査方法および検査装置 | |
| TWI618452B (zh) | Substrate cover | |
| US11276546B2 (en) | Charged particle beam optical system, exposure apparatus, exposure method and device manufacturing method | |
| US10658157B2 (en) | Exposure apparatus and exposure method, lithography method, and device manufacturing method | |
| TW201907233A (zh) | 曝光裝置、曝光方法、及元件製造方法 | |
| JP6794516B2 (ja) | 検査装置 | |
| JP2002184664A (ja) | 荷電粒子線露光装置及び方法並びにステージ装置 | |
| US10593514B2 (en) | Charged particle beam irradiation apparatus and device manufacturing method | |
| JP2016072308A (ja) | 描画装置、描画方法、および物品の製造方法 | |
| JP2002190270A (ja) | 電子線装置およびそれを用いたデバイス製造方法 | |
| JP2015146341A (ja) | リソグラフィ装置、及び物品の製造方法 |