KR20130006355A - 하전 입자 빔 묘화 장치 및 물품 제조 방법 - Google Patents
하전 입자 빔 묘화 장치 및 물품 제조 방법 Download PDFInfo
- Publication number
- KR20130006355A KR20130006355A KR1020120073645A KR20120073645A KR20130006355A KR 20130006355 A KR20130006355 A KR 20130006355A KR 1020120073645 A KR1020120073645 A KR 1020120073645A KR 20120073645 A KR20120073645 A KR 20120073645A KR 20130006355 A KR20130006355 A KR 20130006355A
- Authority
- KR
- South Korea
- Prior art keywords
- stage
- substrate
- magnetic shield
- detector
- shield member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000002245 particle Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 12
- 238000003384 imaging method Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0264—Shields magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2011-151520 | 2011-07-08 | ||
| JP2011151520A JP2013021044A (ja) | 2011-07-08 | 2011-07-08 | 荷電粒子線描画装置、および、物品の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20130006355A true KR20130006355A (ko) | 2013-01-16 |
Family
ID=47438864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020120073645A Ceased KR20130006355A (ko) | 2011-07-08 | 2012-07-06 | 하전 입자 빔 묘화 장치 및 물품 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8476607B2 (enExample) |
| JP (1) | JP2013021044A (enExample) |
| KR (1) | KR20130006355A (enExample) |
| TW (1) | TW201303953A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220167767A (ko) * | 2021-06-14 | 2022-12-21 | 가부시키가이샤 뉴플레어 테크놀로지 | 멀티 하전 입자 빔 묘화 장치 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI661471B (zh) * | 2013-12-13 | 2019-06-01 | 日商荏原製作所股份有限公司 | 真空容器之基座的設置構造 |
| US9952255B2 (en) * | 2015-10-30 | 2018-04-24 | Texas Instruments Incorporated | Magnetically shielded probe card |
| CN106019854A (zh) * | 2016-07-18 | 2016-10-12 | 无锡宏纳科技有限公司 | 图形可变的电子束光刻机 |
| WO2019211123A1 (en) * | 2018-05-02 | 2019-11-07 | Asml Netherlands B.V. | E-beam apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW466542B (en) * | 1999-02-26 | 2001-12-01 | Nippon Kogaku Kk | A stage device and a method of manufacturing same, a position controlling method, an exposure device and a method of manufacturing same, and a device and a method of manufacturing same |
| JP2002184664A (ja) | 2000-12-12 | 2002-06-28 | Canon Inc | 荷電粒子線露光装置及び方法並びにステージ装置 |
| JP2004047170A (ja) * | 2002-07-09 | 2004-02-12 | Hitachi Ltd | 電子線描画装置 |
| JP2005268268A (ja) * | 2004-03-16 | 2005-09-29 | Canon Inc | 電子ビーム露光装置 |
-
2011
- 2011-07-08 JP JP2011151520A patent/JP2013021044A/ja active Pending
-
2012
- 2012-06-27 US US13/534,044 patent/US8476607B2/en not_active Expired - Fee Related
- 2012-07-03 TW TW101123886A patent/TW201303953A/zh unknown
- 2012-07-06 KR KR1020120073645A patent/KR20130006355A/ko not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220167767A (ko) * | 2021-06-14 | 2022-12-21 | 가부시키가이샤 뉴플레어 테크놀로지 | 멀티 하전 입자 빔 묘화 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201303953A (zh) | 2013-01-16 |
| JP2013021044A (ja) | 2013-01-31 |
| US8476607B2 (en) | 2013-07-02 |
| US20130011797A1 (en) | 2013-01-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102741968B (zh) | 支撑和定位结构、半导体设备系统及用于定位的方法 | |
| US7057193B2 (en) | Exposure apparatus | |
| KR20130006355A (ko) | 하전 입자 빔 묘화 장치 및 물품 제조 방법 | |
| US6930756B2 (en) | Electron beam exposure apparatus and semiconductor device manufacturing method | |
| JP6087573B2 (ja) | 処理装置、それを用いた物品の製造方法 | |
| US9035248B2 (en) | Drawing apparatus, and method of manufacturing article | |
| JPH03265120A (ja) | ビーム照射方法および電子ビーム描画方法とビーム照射装置並びに電子ビーム描画装置 | |
| US20140306123A1 (en) | Stage apparatus, drawing apparatus, and method of manufacturing article | |
| US8927949B2 (en) | Measuring apparatus, drawing apparatus, and article manufacturing method | |
| JP5357837B2 (ja) | 露光装置及びデバイスの製造方法 | |
| US11276558B2 (en) | Exposure apparatus and exposure method, lithography method, and device manufacturing method | |
| US11276546B2 (en) | Charged particle beam optical system, exposure apparatus, exposure method and device manufacturing method | |
| TW201907233A (zh) | 曝光裝置、曝光方法、及元件製造方法 | |
| KR20240089745A (ko) | 묘화 장치의 제어 방법 및 묘화 장치 | |
| US9547242B2 (en) | Lithography apparatus, and method of manufacturing article | |
| TWI712864B (zh) | 帶電粒子束照射裝置 | |
| JP2009278002A (ja) | 荷電ビーム描画装置 | |
| US20150187540A1 (en) | Drawing apparatus and method of manufacturing article | |
| JP2016072308A (ja) | 描画装置、描画方法、および物品の製造方法 | |
| KR20160002360A (ko) | 리소그래피 장치 및 물품의 제조 방법 | |
| JP2015146341A (ja) | リソグラフィ装置、及び物品の製造方法 | |
| JP2002190270A (ja) | 電子線装置およびそれを用いたデバイス製造方法 | |
| JP2008016510A (ja) | 半導体回路パターン形成装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20120706 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20130705 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20120706 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20140612 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20140818 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20140612 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |