TW201250898A - Junction device, junction system and junction method - Google Patents

Abstract

This invention relates to a junction device for conducting the junction between substrates. The junction device includes a first holding member for holding by sucking a first substrate on the bottom surface thereof, a second holding member disposed under the first holding member for holding, on the top surface thereof, a second substrate, and a pressing member provided in the first holding member that presses against the central portion of the first substrate. The first holding member is partitioned into a plurality of areas from its center to periphery, each area being set to be able to vacuum suck the first substrate.

Description

201250898 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a bonding apparatus, a bonding system, and a bonding method for bonding substrates. [Prior Art] [0002] In recent years, semiconductor devices have been developed toward high integration. A high-integration complex semiconductor device is disposed on a horizontal surface, and the semiconductor devices are connected by wires to form a product. In this case, the wiring length is increased, and the resistance of the wiring is increased, and the distribution is also increased. . [0003] The prisoner also took out a three-dimensional integrated device that stacked the three-dimensional array of cattle and other devices. In the three-dimensional integrated technique, for example, a two-way embossed circle (hereinafter referred to as "wafer") is joined by using a bonding apparatus. The bonding device, for example, has a processing chamber in which the upper wafer is referred to as "the upper wafer 2 is a lower circle"), and is placed in the processing chamber to push the push pin of the center portion of the ^ 0 And support for the outer circumference of the wafer = spacer. The joint between the 1 and the Qiqiao when using the above-mentioned laminating device. Specifically, first, the div j is abutted at four intervals. After that, the support of the upper crystal plane crystallization is integrated and abutted and spliced (the whole of the 4 上 上 上 上 上 上 [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [Problem to be Solved by the Invention] [0005] When the bonding apparatus described in Patent Document i is used, since all of the processing chambers 2 must be formed in a vacuum environment, It takes a long time (4) to store the wafer in the processing chamber to form a vacuum environment. As a result, the overall processing amount of the crystallizing treatment is reduced. [0006] In addition, in the case of using the above-mentioned bonding apparatus, when utilizing When the push pin pushes the "in the middle part of the circle", since the upper wafer is supported only by the spacer, the relative position of the lower wafer and the upper wafer may be deviated. [0007] The object of the present invention is to suppress the generation of voids between the substrates, and to efficiently bond the substrates appropriately. [Technical means for solving the problem] [0008] The purpose of the present invention is to provide a kind of Joint exhibition The first substrate is adsorbed and held on the bottom surface, and the second member is placed under the second holding member and held on the top surface, and is placed on the first holding member, and is placed on the first holding member, and pushes (4) 1 base Μ, 3 at: 2 The holding member is divided into a plurality of domains from the center portion to the outer peripheral portion. [The vacuum suction of the substrate is not provided in the substrate. The root of the present invention is used to push the center of the substrate by the pushing member to make them connect to each other. When the vacuum suction of the first region of the 1st member is stopped, the position of the substrate 1 and the second substrate is not changed in the horizontal direction of the 201250898 plate with respect to the second substrate. Therefore, the substrate can be bonded to the second substrate, and the first substrate is gradually brought into contact with the second substrate from the central portion to the outer peripheral portion of the i-th substrate, for example, even between the second substrate and the second substrate. When there is air that may become a void, the air is squeezed to the outer peripheral side where the /i-th substrate abuts the second substrate. If so, the gas can be moved from the substrate to the substrate. The external customs are released. Therefore, it is possible to prevent the substrate from forming voids and In addition, the roots of the invention are not required to form a vacuum environment in the gas atmosphere when the substrates are joined as in the prior art, so that the wires can be efficiently reduced in the short period, thereby improving the substrate bonding. The amount of processing. - _ _ . . [0010]

According to the present invention, there is provided a joint comprising the joint device, comprising: a processing station, a 3H jointing device, and a loading and unloading station, wherein the number of the plurality of parts can be stored separately! The substrate, the second substrate, or the second substrate and the second substrate are joined to each other, and the second substrate and the second base stacked substrate can be transferred or sent out to the processing station. The station includes a surface activation device that defines a bonding surface of the second substrate or the second substrate, and a surface hydrophilization device that activates the first substrate or the second substrate that has been activated by the surface activation device. The surface is hydrophilized; and a transporting area for the table, the activation device, the surface hydrophilization device, and the bonding device to transport the i-th substrate, the second substrate, or the superposed substrate. In the bonding apparatus, the first substrate hydrophilized by the surface chemical conversion device is bonded to the second substrate. Surface Kiss K [0011] The present invention further provides a bonding method for joining substrates by using a bonding apparatus, the bonding apparatus comprising: a first holding member that adsorbs and holds a second plate on a bottom surface; and a second holding member Provided below the second holding member, on the top surface of the second substrate; and a pushing member provided on the first holding member, f embossing a central portion of the first substrate; the ith holding member The central portion and the peripheral portion are divided into a plurality of regions, and vacuum suction to the second substrate can be set in each region; the 忒 bonding method includes: holding the second substrate held by the first holding member and the second substrate The second substrate held by the member is disposed to face at a predetermined interval; after 201250898, vacuum suction of the first holding member on the second substrate in the central portion is stopped, and the push member pushes the center portion of the first substrate And a step of reducing the contact between the basins and the central portion of the second substrate; and then, in the central portion of the second substrate, the blood is first received, and the first holding member is stopped in the outer peripheral portion of the first substrate. The vacant suction is a bonding step of causing the i-th substrate to gradually contact the second substrate from the central portion of the first substrate, and further bonding the first substrate and the second substrate. [Comparative to the effects of the prior art] [0012] Rate ===_plate rope _:, and more correct and effective [Embodiment] [Best Mode for Carrying Out the Invention] [0014] Into the description of the embodiment of the present invention . Fig. 1 shows the top view of the connection structure of the actual sample. 2 shows the bonding system 1 = [0015] The following connection system 1 connects, for example, two substrates (wafer Wu, team) shown in FIG. Under the armpit, the wafer disposed on the upper side is used as the second substrate. It puts the wafer "%" and puts the wafer Wu down." Further, the upper side is the surface Wui", and the side opposite to the surface I is the moon surface I". Similarly, the bonding splicing of the lower wafer W1 is referred to as the "back® 2 second, and the second substrate is joined to the lower wafer team to form a stack. Fusing the wafer to make a stack 1 [0016] The body 2::1 = the upper π?? will move the delivery station 2 and the processing station 3 - the structure w, the inbound and outbound station 2 in its and the external Each device can receive 201250898 W in or out; a processing device. Ba® Wu, Wl, Fenghe wafer Wt implements the predetermined processing of each [0017] several sets of 1〇, the box mounting table 10 is set in the complex direction (8) The mounting plates 11 are arranged in a row in the horizontal direction X11 with respect to the joint (four) 彳1^. The g-box mounting plates can carry the E-box G, Cl: Ct. α, & when loading or sending out] Wafer Wu, multiple wafers t^ station 2 constitutes a bribe. The number of rr is not two: the wafer due to abnormality. 3 wafers and other positive cartridges of the wafer ίτ are used as abnormal wafers for recycling; 匣: = often stacked wafer WT storage boxes. U Tianzuo [0018] 曰斗站 2 * The wafer carrying unit 20 adjacent to the E cassette mounting table 1G ί 白 日 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在The Cu, CL, and Cr on the 11 and the transfer devices 5A and 51 of the third processing block G3 of the post-speed processing station 3 transport the wafers Wu, W1, and the stacked wafer %. [0019] Processing station 3 setting The plurality of (for example, three) processing areas t and 'G2' S ft having the respective places are provided with the first processing block G1 on the front side of the _ 3 (the negative side of the X direction in FIG. 1), The second processing block (2) is provided on the back side of the processing station 3 (χ = direction = positive direction side in Fig. 1). In addition, on the side of the processing station 3 where the exit station 2 is located (the negative direction of the Υ direction of Fig. 1) The third processing block "G3 设置 [0020] 201250898 For example, a surface activation device 3 that activates the surfaces Will and Wli of the wafer %, W1 is disposed in the first processing block G1. [0021] For example, in the second processing block G2, the surface Wii of the wafers W1j, W1 is hydrophilized by, for example, pure water, and the surface hydrophilization device 40 which washes the surfaces Wm and Wu is The bonding apparatus 41 of the wafer Wu and the team bonding is arranged side by side in the horizontal direction in the Y direction from the loading/unloading station 2 side. [0022] - For example, in the third processing block G3, as shown in FIG. The transfer devices 5A and 51 of the circles Wd and W1 and the superimposed wafer Wt are sequentially arranged in two stages from bottom to top. [0023] As shown in Fig. 1, the first processing block is processed by the third processing. The wafer carrying area 60 is formed in the area surrounded by the block (2). For example, the wafer transfer device 61 is disposed in the wafer transfer area 6A. [0024] The Japanese yen conveying device 61 is provided with a transport arm that can be arbitrarily (four) in the vertical direction, the horizontal direction (γ direction, = direction), and the entanglement. The crystal carrying device 61, ^ moves in the wafer transfer region 60, and the crystal is transferred (jjn, stacked wafer 仏, _) 2 slave third processing block [0025] I, scouring the surface activation The structure of the device 30. The surface activation device 3 has a process container 可 that can be sealed inside. The side surface of the processing container 70 on the side of the J area 60 is formed by the transfer of the wafer team. The gate valve 72. 71 is provided in the inside of the processing container 70, and a member for moving the lower portion of the substrate is provided with a conductive material such as a motor.崎201250898 81, the lower electrode 80 can be raised and lowered at will. [0027] (Fig. ΐ!: Electrode-like internal Xie heat medium circulation flow path 82. The medium is circulated by the temperature control mechanism, and the heat medium of 5 weeks to the appropriate temperature passes through the heat. The medium introduction tube 83 is introduced into the enchantment. The τ part electrode 8G is adjusted to the temperature of the riding. The inspection, the crystal placed on the top surface of the lower part of the Qiu, the heart [0028] The temperature regulation of the temperature of the circulation of the arc 82 weeks The organization is not limited to the media [0029] 'other mechanisms such as cooling jackets, heaters, etc. can also be used. -ίΪ^3Ϊ: ^ Connect the filter 95 with the t94, coil, etc., and the high-voltage power supply 96, and the water treatment power supply, set to the rainband, and apply it to _93. The λ plane of the gas is set to the wafer %&amp The back surface supply heat conductor supply hole (10) is represented by t as shown in Fig. 5, and the plurality of heat conduction gas cores are rounded. The top surface of the lower to the pole 8 turns, and the average distribution is arranged in a plurality of the same as shown in [0031] m 4 The heat-conducting gas supply tube source efficiently conducts heat by the heat of the crucible, etc. = (10) the solid ffu, the _f surface I formed between the narrow g 201250898 < When the circles Wu and Wl conduct heat very efficiently, the hole 100 and the heat-conducting gas supply pipe 101 may be omitted. The focal ring 102, the way around the mace, is provided with a ring-shaped focus ring 1 〇 2. , with Qianxuanxuan #n_complex or conductive material used. The secret material is effectively shot only to the inner wafer Wu, WL [0034]

103 70 J gas in the container 70; baffles. With the exhaust ring 103, the processing capacity 11 7G _ is uniformly discharged. The power supply rod C is extremely transparent: electric, 4 connections. 1 High frequency power supply 106 is connected. When the plasma is at the second time, 105' and the first electrode 80 are applied with, for example, a ^^1 _ rate power supply (10) to the next [_6] " so 11 〇Τ [0037] The upper electrode 110 is transmitted by, for example, blocking electricity 112 connections. Butterfly (1) on the child. The neodymium electrode 110 is applied with, for example, a high-frequency thunder smoke of 60 MHz, a power source 112 rate power source _ and a second high-frequency power source 112, and a first high-frequency application _ rate voltage to generate a ___ upper portion in the interior of the processing container 70. Electrode 110 10 [0038] [0038] 201250898 applies high high-voltage power supply 96 to the lower electrode 8G ^93, pole no幡 & the first high-frequency power supply of the paleophase / same frequency capillary pressure 丨〇6, the upper neighboring mine : The second high-frequency power supply 112 of the frequency voltage is controlled as described later = [0039] The hollow portion 120 is formed inside the °. The hollow portion 120 is connected to the air shovel supply and/or port s 121. The gas supply pipe 121; = ΐ: the gas supply pipe uses, for example, oxygen, nitrogen, argon or the like. U120 correction gas can make [0040] 124 〇 m ^ of the bottom surface & South reverse 4 on the 5 again set a number of small holes. In the upper electrode 120 ^ ilSil 70 [0041] pipe ιί suction σ 13G ° suction port 13G and the suction process is connected with the vacuum fruit 131, the vacuum system 131 decompresses the internal environment of [〇:] to a predetermined Vacuum degree. Below the lower electrode of the w bucket (nine), a wafer for supporting the wafers Wu, L 4, and the cow's yak (not shown) is provided below. The lift pin is inserted through a bead hole (not shown) of the lower electrode 80 and protrudes from the top surface of the lower electrode 80. Next, the structure of the surface hydrophilization device 40 will be described. Surface Hydrophilization Apparatus A processing container 150 having a sealable interior as shown in Fig. 6 is provided. On the side surface of the processing container 150 on the wafer transfer region 60 side, as shown in FIG. 7, a wafer W (j, a team 11 201250898 loading/unloading port 151 is formed, and an opening and closing gate 152 is provided in the loading/unloading port 151. [0044] In the central portion of the processing container 150, a rotating chuck 160 that holds the rotation of the wafers Wo, W1 is provided as shown in Fig. 6. The rotating chuck 160 has a horizontal top surface, & The history has attracted a suction port (not shown) such as a wafer team or a cymbal. The dream is attracted by the suction port, and the wafer can be adsorbed and held on the rotating chuck 160 [0045] A rotary chuck 160 is provided with a chuck driving portion 161 having a member such as a motor, and the chuck driving portion 161 is rotatable at a predetermined speed. Further, the chuck driving portion 161 is provided with a lifting drive source such as a cylinder or the like. Chuck 16 〇 [0046] ~ τη牛 ^ Rotating chuck 16G is placed around the wafer %, [the cup portion 162 that floats and collects the liquid limb and collects it. In the cup section] Cup thin 2 峨 ring = [0047] 162 shows the negative direction of the x direction (10)7, (Figure 7 The left and right direction) (4) of the track m. The outer side of the extension extends to the γ direction = square 1^ direction 7 = direction (left direction of Fig. 7) side i Π 0 卜 容 承 承 丨 』 』 』 』 』 』 』 』 』 』 The outer side of the side. The nozzle arm m of the track 0 and the washing arm 172. 170 1745 The direction of the 162 in the direction of the Υ direction can be from the center of the wafer Wu, WL placed in the cup shape The heart temple portion 175 moves to the radius of the cup portion 162 W. The nozzle wafer is lifted and lowered along the wafer Wu, and the pure water nozzle 17 = ^71 can be adjusted by the nozzle driving portion. 12 201250898 The nozzle 173 is connected to the e 76 which supplies pure water to the pure water nozzle 173 as shown in Fig. 6. The supply pipe 176 and the pure water supply source for storing pure water inside the external supply tube 176. A supply device group 178 including components such as a pure water flow control unit or a flow rate adjustment unit is provided. [0050] The skill arm 172 supports the cleaning tool (10). The wire cleaning tool (10) 179 has just set, for example, a plurality of A linear or jelly-like brush 180a. The washing and damp driving unit 1δ1 shown in the washing arm ϋϊΐΐ 7 is freely movable on the rail 17G, #/3⁄4丨^Γ 18G moves from the outer side on the negative side in the γ direction of the cup portion 162 to the upper portion of the center portions of the wafers Wu and W1 in the cup portion J62. Further, the borrowing arm 172 can be raised and lowered at will, and the joint wire is washed. [0051] 八别 ί ί 'Knowledge construction towel, pure tree mouth 173 and wash net protector (10) can also use the same - arm support ° In addition, also connected to the bottom surface of the processing container 150 to discharge liquid: 4 In the case of no water 0, an ionizer for preventing static electricity is provided (Fig. [0052] Dry 3 = structure of the above-described joining device 41. The joining device 41 is as shown in Fig. 8. All of the inner processing containers (10) 2 are on the side of the region 60 side, and 罟 an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an an Sending D The opening and closing door 192 is provided on the MH entrance 191. The inside of the processing container 190 is divided into regions T2 by the inner wall 193. The carry-in/out port 191 is provided in the transporting knife mu and the processing = «. Further, on the _193, the carry-in/out port 194 of the (ii) 190 of the wafer L is also provided. The mouth is the mouth of the hatred day i % 13 201250898 [0054] In the positive direction side of the X direction of the moving field area T1 is set to temporarily cut the wafer ^ 200 ° 200 2 ^: The same call LaS Wu, W . The superimposed crystal gj Wt is enough for any two. [0055] The wafer carrier 2〇2 is provided in the transport area τι, and is moved arbitrarily on the material path 201. The round transport body 202 is as shown in Fig. 8 and Fig. 9 and the crane is closed to transport the wafers Wu, WL, and stack between the transfer area ί! nw or the f area T1 and the processing area Τ2. == 峨 峨 以及 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 【 位置 τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ The position adjustment mechanism 21 includes, for example, a base 211, a suction holding wafer, W1, and a rotation portion n, and a detection portion 213 for detecting the position of the notch portion of the wafers Wu and W1. Then, the wafer claws and the "team rotation side detecting portion 213" which are held by the holding portion 212 are used to detect the position of the notch portion of the wafer % and W1, thereby adjusting the slit.卩 卩 position and adjust the orientation of the wafer team, wL horizontal direction. In the transport area T1, an inverting mechanism 220 is provided which moves between the transport area processing areas T2 and inverts the surface and the back surface of the upper wafer Wu. The turning mechanism 220 is provided with a holding arm portion 221 that holds the upper wafer claw as shown in FIG. The holding arm portion 221 is provided with an adsorption 塾 that adsorbs the upper wafer Wu and maintains it horizontally: the portion 221 is supported by the first driving portion 223. The first driving portion 221 can be arbitrarily rotated around the horizontal axis, and can be horizontally extended. The second driving portion 224 is provided below the first driving portion 223. With the second movable portion 224, the first driving portion 223 can be arbitrarily rotated around the vertical axis, and can be moved up and down in the vertical direction. Further, the second drive unit 224 is attached to the road 225 extending in the Y direction shown in Figs. 8 and 9 . The rail 225 extends from the processing area T2 to the transport 14 201250898 H w 2 drive unit 224 The turning mechanism 22Q can be moved along the track 225 to move between the upper head 230 and the lower head 230 described later. Then, turn two. The structure of the work 22G of the transport mechanism for transporting the wafers Wu, W1 and the superimposed wafer 1 is not limited to the structure of the above-described embodiment, and may be placed at the back of the watch. Further, the reversing mechanism 220 relays the crucible, and further, another transport mechanism may be provided at a position where the TTTh # reversing mechanism 220 is attached to the wafer transport body 202. In addition, the wall is turned on, and the machine is attached to the [_8]. As shown in Fig. 8 and Fig. 9, the holding member holding the upper day of the round Wii with the bottom surface is provided. The second holding structure portion, the bottom surface of the wafer WL is opposite to the lower chuck 231, and the lower portion of the head drive 234 is placed below the head portion 234. The lower jaw 231' lower chuck 231 can move downward in the horizontal direction toward the vertical side 23, and can be arbitrarily moved in the flat direction. Further, the circumference of the chuck driving portion 231 is arbitrarily rotated.

Ίίίί. The lift pin can be inserted into the through hole S ί _ formed by the lower chuck 231 t. Further, in the present embodiment S, the lift mechanism and the moving mechanism are formed. The area=clip 230, as shown in FIG. 12, is divided into a plurality of (for example, three) & domain cafes a, pass, and green. These areas are arranged in the order from the center of the upper collet 230 to the outer peripheral portion as shown in Fig. 15 15508098. Then, the region 230a is circular in plan view, and the regions 230b and 230c are annular in plan view. In each of the regions 230a, 230b, and 230c, as shown in Fig. 12, suction pipes 24a, 240b, and 240c for adsorbing and holding the upper wafer Wii are separately provided. Each of the suction pipes 240a, 240b, and 240c is connected to a different vacuum pump 24ia, 241b, and 241c. Therefore, the upper chuck 230 is disposed such that the upper wafer Wu can be vacuum-sucked in each of the regions 23a, 23〇b, 23〇c. In addition, in the following, the three regions 23A, 23B, and 23〇c may be referred to as a first region 230a, a second region 230b, and a third region 230c, respectively. Further, the suction pipes 240a, 240b, and 240c may be referred to as a first suction pipe 240a, a second suction pipe 240b, and a third suction pipe 240c, respectively. Further, the vacuum pumps 241a, 241b, and 241c may be referred to as a second vacuum pump 241a and a second vacuum ^^ third vacuum pump 241c, respectively. A through hole 242 that penetrates the upper portion 230 from the thickness direction is formed in the center portion of the upper end portion 230. The other central portion of the upper chuck 2 corresponds to the upper portion and the center portion of the wafer on which the upper wafer is adsorbed and held. Then, the push member 2, which will be described later, pushes the pin 251 through the through hole 242. A center member 250 that presses the upper wafer Wu is provided on the top surface of the upper chuck 230. The pushing member 250 is provided with a cylinder structure, and is provided with an outer cylinder 252 that serves as a guiding portion when the pushing iron 251 is lifted and lowered. For example, a driving unit (not shown) in which a motor is built is inserted, and the through hole is inserted to raise and lower at any time. The push member 250 presses the center portion of the upper wafer and the lower wafer (4) to abut each other when bonding the wafer L w / white to be described later. [0064] The upper chuck 230 is provided with the upper photographing member 253 as the second photographing member of the photographing surface 1. The upper photographing member 253 uses, for example, a wide-angle = 16 201250898 camera. In addition, the upper photographing member 253 may be disposed on the upper clip 3〇. [0065] The lower chuck 231' is divided into a plurality of regions (for example, two regions 231a and 231b) as shown in Fig. 14 . The regions 231a, 231b are sequentially disposed from the center circumference of the lower chuck 231. Then, the region 231a is circular in plan view, and the region 231bk is annular in plan view. Each of the regions 231a and 231b, as shown in Fig. 12, is provided with a suction pipe 260b for adsorbing and holding the upper wafer team. The long-term attraction 260a, 260b is connected to different vacuum pumps 261a, 26, respectively. Therefore, the lower portion tH]1 can be provided in each region such as the Confucian setting of the outer peripheral portion of the vacuum suction bow π w 231 of the lower crystal to prevent the crystal, Wl, the superimposed crystal clip 231 fly out, and the sliding member 262. Stop member 262 = upper square::= The outer circumference of the chuck 231 is provided with a plurality of, for example, 3's in the next [0067]. The lower jaw 231, as shown in Fig. 12, is set. The lower portion I of the first imaging member that captures the surface I of the Pan is placed on the lower clamp as a photograph of the upper Japanese team. In addition, the lower photographing member can also be moved [0068] The above joint system 1, as shown in Fig. 1, is used to play 7 ^ a part 300 ' for example, a computer, with a program storage _ (图Ϊ未^'] ^ ^The empty rt ^ Γ Controls the program of the wafer bonding process described in the 纽 1 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 读取For example, a computer can: a memory medium H that she can read, and from the memory medium [0069] [0069] 201250898 Next, the bonding processing of the wafers Wu and WL by the bonding system 1 configured by the above method will be described. Fig. 15 is a flow chart showing an embodiment of the main steps of the wafer bonding process. [0070] First, a cassette Cu containing a plurality of wafers Wa, and a cassette containing a plurality of lower wafers WL are housed. The cL and the empty cassette are placed on the predetermined cassette mounting plate 11 of the loading/unloading station 2. Thereafter, the upper wafer Wu in the cassette Cu is taken out by the wafer transfer device 22, and transported to the processing station 3 The transfer device 50 of the third processing block G3. [1] Then, the upper wafer Wu is transported by the wafer transfer device 61 to The surface activation device 30 of the first processing block G1. The upper wafer Wu carried into the surface activation device 30 is transferred from the wafer transfer device 61 to the top surface of the lower electrode 80. Thereafter, the wafer transfer device 61 The surface activation device 3 is withdrawn, and the gate valve 72 is closed. [0072] Thereafter, the vacuum pump 131 is operated to decompress the gas atmosphere inside the processing container 7 through the suction port 13 to a predetermined degree of vacuum, for example, 67 Pa to 333 Pa. (〇. 5T〇rr~2. 5 Torr). Then, when the upper wafer is processed as will be described later, the gas atmosphere in the processing container 70 is maintained at the predetermined degree of vacuum. [0073] The power source 96 applies a high voltage of a DC voltage set to Ϊ25 〇〇V to the conductive film 93 of the electrostatic chuck 90. If the life force generated by the electrostatic chuck 90 is applied, the upper wafer is applied. The shame is electrostatically adsorbed to the lower electrode 51 - the upper crystal of the electric wave, and the heat medium of the heat medium is maintained at a predetermined temperature, for example, milk. [0074] After the production: the gas supply source 122 supplies The processing gas is ejected from the upper electrode 110% 125 is uniformly supplied to the inside of the processing container 7〇. 鈇ί茂弟^ rate power supply 1G, please apply a high frequency voltage of, for example, 2MHz to the lower electrode 8G, 'the second high frequency power supply upper part _ 11 〇 apply, for example, ^= 201250898, rate power If the upper electrode 11 is used, the electric field is supplied to the processing volume by the electric field. An electric field is formed between the electrodes 80. [0075] The processing gas inside the L is electrically degenerated. Sometimes called "processing card; the upper wafer _ surface "plasma" on the lower electrode 80),

The organic matter on it is removed. At this time, the main 3, the same surface of the surface I _ gas electric shock will ^t,; the effect of residual moisture. In the case of using the plasma for processing, it is activated. The wafer % on the product is transported by the wafer transfer device 61 to the second processing block G2. The upper wafer Wu carried into the surface hydrophilizing device 4 is transferred from the wafer device 61 to the spin chuck 16 and is adsorbed and protected. Next, the nozzle arm Π1 moves the pure water nozzle 173 of the standby unit Π5 to the upper 曰, wu, above the core portion (5), and the washing arm 172 is cleaned by the cleaning tool (10). Thereafter, the spin head 16 is rotated to rotate the upper wafer Wu, which supplies pure water onto the upper wafer claw. For example, the surface of the upper wafer, Wui, is attached with a hydroxyl group to hydrophilize the surface. Further, the surface of the upper wafer Wu is washed by the pure water of the pure water nozzle opening 3 and the washing and cleaning tool 180 (step S2 of Fig. 15). Then, the upper wafer Wu is transported by the wafer transfer device 61 to the bonding device 41 of the second processing block G2. The cyanide on the upper wafer loaded into the bonding apparatus 41 is transported to the position adjusting mechanism 21A by the crystal transport body 202 through the transmission unit 200. Then, the position adjusting mechanism 21 adjusts the seating direction of the upper wafer Wu in the horizontal direction (step S3 of Fig. 15). [0079] 19 201250898 Hold arm 221 . Next, in the display field T1, the surface of the upper wafer b and the back surface of the substrate 220 are reversed (step s of Fig. 15 = turn, whereby the W (four) surface Wm faces downward. In addition, the upper wafer. Also (7 ' The upper wafer can be moved in the movement of the inverting mechanism 220, which will be described later. The continuous surface and the negative inversion are also [0080], and then the inverting mechanism 220 is transferred to the upper chuck 23A toward the upper chuck 23, the side movement reversing mechanism 220. The upper wafer team is adsorbed and held from the head 230 (step S5 of Fig. 15). At this time, the lunar surface is gripped and operated by the upper portion, and the upper wafer holder and the upper wafer WU are vacuum-attracted. Wu at; ^ Qaa: b, 30c, before the bonding device 41 will stand by in the upper chuck 23 (). The next team is transported to [0081] The wafers of the above steps S1 to S5 are processed on the upper wafer WU. After Wu, the processing of the lower wafer team is continued. First, the bucket 3 is taken over from the second wafer, and the second wafer 22 is transported to the processing = then the lower crystal 1 is transported to the surface by the wafer transfer device 61. The surface wL1 of the n, = circle WL is activated (the surface of the lower wafer W1 in step s, step S6 of Fig. 15) Sexualization, in the same manner as the above step, is the same as in the [0083] Ϊ 下 下 下 下 下 下 下 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被 被The surface is placed in step (7). In addition, the surface of the lower crystal K Wl in the step = map = washing, and the above-mentioned word S2_, so the aligning of the 纟 = = 崎 以及 and [0084], the lower wafer W1 is transported by the wafer transfer device 61 to the lower gate of the joint mounting device 41, and passes through the _ _ 晶 晶 amp 般 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The seating direction in the horizontal direction (step S8 in Fig. 15). Spoon 20 201250898 [0085] Thereafter, the lower wafer team is transported by the wafer carrier 202 to the lower chuck 231, and is held and held by 231 (step of Fig. 15). At this time, all of the direct pumpes 261a and 261b are operated, and vacuum suction is performed in all the regions of the lower chuck 231, 2 sen, and =3⁄4, and the back surface of the lower crystal body is Panasonic. The adsorption is maintained so that the surface of the lower wafer team faces upward. [0086] The supporting part is 230 heads to keep the wafer on top. % and the position of the lower chuck 231 · Ϊΐΐ ® in the horizontal direction. As shown in Fig. 16, the surface WW of the base of the predetermined complex point (for example, 4 points) or more is formed on the surface Wu of the lower surface 0 L A predetermined plurality of points are formed on the surface (for example, 4, i is used for the first time, and then the upper photographing member 253 is horizontally leveled: the surface Wu of the wafer W1 is lowered. Then the lower photographing member 263 is directed toward the water = photographing The surface of the wafer Wu, Wui. Then, the position of the taper (including the horizontal direction) is taken by the lower chuck 231, so that the reference point A of the wafer W1 is displayed in the image of the upper-level photo. The above wafer (4) is displayed in the image taken by ί 263. That is, the lower chuck is moved by the chuck driving portion 234 to adjust the position of the lower wafer W1 in the horizontal direction. For example, t〇曰曰087] The position of the wafer team in the horizontal direction (step S10 of the 15). ) The horizontal direction of the circle 2 and the % are in the steps S3 and S8, and the position is adjusted to go to the Α, β w糸, and the predetermined pattern formed on the WL and WU is used as the ^ S can use other benchmarks. For example, the outer peripheral portion and the notched portion of the wafer W1 and the crucible can be used as reference points. The head drive unit 234 of the upper well raises the lower chuck 231 as shown in FIG. 17 to arrange the T曰曰 circle WL at a predetermined position. At this time, the following wafer machine is placed in the following manner: Table 21 201250898 Face Wu, SWu's dirty interval _ 5 〇 Mm). (〗 〖Fan Mu too A 疋 ' ^ feel the Japanese yen Wu and the next wafer Wl 2 step S11). Further, in steps S5 to sii, vacuum suction is applied to the lower wafer W1 in all areas m 丨 [= r23ia, 231b of the upper enthalpy 230

Then, the operation of the first vacuum pump 241a is stopped, and the first suction pipe 24Ga of f = 23Ga in FIG. 18 performs vacuum T t on the upper crystal i | Wu and the third region 23 〇 C in the t 2 region, the upper wafer 嶋After the straight space is held t, the push pin 251 of the pushing member 250 is lowered by 81% of the center portion, and the upper wafer % is lowered. At this time, =^ 251 knows that the push lock 251 will move by 7 〇 _ in the state of the upper wafer Wu, for example, _g. Then, the center portion of the upper wafer M'W1 is pressed by the pushing member 25 to abut each other (step Si2 of Fig. 15). , j ' is pressed by the center portion of the upper wafer Wu and the center portion of the lower wafer W1: sweat. Coupling (thick line in Figure 18). That is, since the surface WL1 of the upper wafer %/lower wafer WL is activated in steps S1 and 邠, respectively, the first U1 generates a van der Waals force between the surfaces Wui and Wli to make the surface· And wu are connected to each other. Then, since the surface Wm of the upper wafer Wu and the surface WL1 of the lower wafer W1 are hydrophilized in steps S2 and S7, respectively, the hydrophilic group hydrogen between the surfaces Wu| and Wli is bonded, and the surfaces Wui and Wli are strong. Solidly joined to each other. [0091] Then, in a state where the core of the upper wafer team and the center portion of the wafer W1 are pressed by the push member 250 as shown in FIG. 19, the second vacuum pump 24 is stopped to stop the first The second suction pipe 240b of the second region 230b attracts the real shame of the upper wafer. If the second area 230b is held, the wafer Wu falls on the lower wafer team. Thereafter, the operation of the third vacuum pump 241c is stopped to stop the vacuum suction of the upper wafer by the third suction bow 240c of the third region 23〇c. If it is stopped from the center of the upper wafer Wu 22 201250898 to the outer part, it will abut each other. Then, the surface 丄 = the resulting bonding force, so that the above-mentioned bonding phenomenon gradually becomes · ί 曰 曰 曰 曰 曰 圆 圆 圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆Step S13) of Fig. 15 . Further, the pusher member ' is raised to the upper chuck 23'. The direct suction and the lead of the lower wafer team of the suction tubes 260a and 260b of the Id Shaw 231 are attracted, and the adsorption and holding of the lower wafer W1 by the lower chuck 231 is stopped by the 彳τ. -[0093]- ... Set 6ΐ1==Γ/0Β1 ^The 4 wafers Wt 'was transferred by the wafer transfer device is transferred to the delivery station 2 wafer transfer device circle wu mounting plate 11 box c", if pure, crystal [0094] pressurizes the pattern "in step 3", pushes the center portion of the j Wu and the center portion of the lower wafer W1 with the push member 250 to make each other The connection from the center of the upper wafer to the outer portion of the upper wafer is stopped. The wafer is always sucked and the lower wafer is connected to each other, thereby making the upper crystal "with a circle of 5 ± °. 'Because the vacuum port Η 对 of the upper wafer Wu in the regions 23〇b and 23GC is stopped, the center portion of the upper wafer Wu and the center portion of the lower wafer team are pressed to make each other

There is air between the above (4)% and the next day's yen & the position of the upper wafer relative to the horizontal direction of Tsa0 Wl does not produce the wafers li and WL. This J [0095] ° ^ b, in step (10) +, because the upper wafer ... sequentially from the upper wafer ^ two. !5. The outer peripheral portion abuts against the lower crystallite W1, so that even in the case where, for example, the upper wafer % and the lower crystal form pores of the air, the air is squeezed to abut against the upper 曰曰0 Wu and the lower BSi]%. The side is closer to the outside. If so, air can be released from the center to the outer periphery between the wafers Wu and WL. Therefore, it is possible to prevent the 23, 50,508,098 round Wu, Wl from properly bonding the wafers Wu, Wl to create a gap, so that each of the [0096] ° 'w妾 ί 无 便 便 便 便 便 便 便 使 晶圆 晶圆 晶圆 晶圆 晶圆Wu, a vacuum environment, so that the bonding of the u can be efficiently performed in a short time, thereby increasing the throughput of the wafer bonding process. Therefore, the holding member 262 is provided in the outer peripheral portion of the 231, and the wafer WT is caused to fly out from the lower chuck 231 and slide off. The position of the direction is 〇_1〇, and the seat in the flat direction is more than the joint device 41 of the joint system 1, and the surface of the cleaned surface is hydrophilized ===; the circle is "joined." Therefore, it is possible to further improve [0099] that the pin system pushes the pushing of the pushing member 250 in step S12, and the center portion of the upper wafer Wu is abutted against the center of the lower wafer W1. At this time, the pushing member 250 may be provided with the air t, that is, in the above embodiment, the pushing member of the pushing member 250 is pushed and pushed, and the force is 251. In addition, In this embodiment, the air gas is supplied (four) to make a 'only, 1_ mechanism is not limited to a variety of different mechanisms. Μ ~ Hugh · Η木 with a variety of 24 \ V> / [0100] 201250898 make the next ΐ 头 head 'utilization The chuck driving unit 234' arranges the lower wafer WL at a predetermined position as shown in Fig. 23. At this time, the interval D2 between the surface wL1 of the buck WL and the surface Wui of the upper wafer team (for example) 150/zm) configuration of the wafer team. ^ The previous steps S1 ~ S10, 盥上诚杂植cm 隹 其 detailed description. /, m, the same S1 ~ S10 Therefore, the operation of the [0101] Ba 1 vacuum pump 241a is omitted, as shown in Fig. 24, the i-th part-side is stopped, and the center of the 'wrong-push-upper crystal' is pushed up. [0102] When the μ is rising, as shown in Fig. 25, the lower chuck 231 is advanced to 2Γι ιιτ, :st wl ^f °, and the seven-liter liter of the cow is based on the vertical direction of the push pin 251 of the measuring unit 400. : ίί:Μ; ί^ f ^ 231 makes the number of t-cores on the wafer core oblique, and judges the lower chuck (four) coder to perform 』:: like j to push the top of the circle W from the middle of the U ~ sniff The center of the lower wafer W1. If so, the center between the receiving part and the lower part (4) starts to be connected. [0103] The center of the round team is squatting down to the surrounding area. The 曰曰U曰曰0 I abut each other, and the upper wafer Wu is bonded to the lower 25 201250898 wafer team. In addition, this step S13 is the same as S13 of the above-described embodiment, and detailed description thereof will be omitted. [0104] In the present embodiment, the lower chuck 231 is raised in a state where the center portion of the upper wafer is pressed by the push member 25, and the center portion of the upper wafer Wu can be placed under the disk. The center portions are in contact with each other. At this time, since the lower portion of the lower head 231 is precisely controlled by the encoder of the secret portion 234, the drive of the push = 50 can be regarded as the operation of the air gas red. Since the lower head 2 ^ cow is closely controlled, the upper wafer ^ and the lower wafer m do not collide. By J ^ ± β Θ θ ® [0105] The lift of the outer chuck 231 is determined according to the lion The determination of the knot immediately controls the lifting of the lower chuck 231, that is, the so-called front front is compared with the lowering of the lower head 231 by controlling the circle of the lower chuck 231 according to, for example, a predetermined amount of lift. By this; [^06: / in the ~. 1. The center of the lower wafer ^ is more correctly abutted. The direction portion 234 causes the lower head 231 to move toward the vertical and vertical directions. However, the upper chuck 230 can also be moved up and down toward the insect M^ or arbitrarily moved in the horizontal direction. In addition, it is also possible to arbitrarily raise and lower the upper portion of the chuck 231 in the vertical direction and to the horizontal [0107], and to make the bonding of the wafers Wu and Wl stronger and stable. The surface activity is two. From this point of view, it is also possible to use oxygen or argon in the treatment gas that is suitable for the polymerization of nitrogen. However, more hydrogen and oxygen are used because 'the use of nitrogen is more stable than the use of oxygen or chlorine. θ ). . The latter is caused by the hydroxyl group to make the wafers 1 and WL stronger σ. For example, since nitrogen gas is used as the processing gas, the bonding time of the wafers Wu and W1 in the bonding layer 201250898 41 is further shortened, and the wafer % and the team immediately start bonding after the contact, so Further prevent deviations in the position of the wafer team and the team. Further, a part of the above embodiment can be combined and the action and efficacy of the phase can be obtained. [0109] The above description of the preferred embodiments of the present invention is not limited to the embodiments. It is a matter of course that the present invention is also within the technical scope of the present invention, as long as it is within the scope of the patent claims. The present invention is not limited to the embodiments, and various embodiments may be employed. In the present invention, the substrate is applied to the FPD (flat panel display), the initial shrinkage for the mask, and the like. [Simplified description of the drawings] Fig. 1 is a schematic view showing the structure of the bonding system of the present embodiment. Top view. Fig. 2 is a schematic side view showing the internal structure of the bonding system of the embodiment. Fig. 3 is a schematic side view showing the structure of the wafer and the lower wafer. Fig. 4 is a schematic longitudinal cross-sectional view showing the structure of the surface activation device. Figure 5 is a plan view of the lower electrode. Fig. 6 is a schematic longitudinal cross-sectional view showing the structure of the surface hydrophilization device. Fig. 7 is a schematic cross-sectional view showing the structure of the surface hydrophilization device. Fig. 8 is a schematic cross-sectional view showing the structure of a joining device. Fig. 9 is a schematic longitudinal cross-sectional view showing the structure of a joining device. Fig. 1 is a schematic side view showing the structure of a position adjusting mechanism. Fig. 11 is a schematic side view showing the structure of an inverting mechanism. Fig. 12 is a schematic longitudinal cross-sectional view showing the structure of an upper chuck and a lower chuck. Figure 13 is a plan view of the upper chuck as seen from below. The figure is a top view of the lower chuck viewed from above. 27 201250898 Fig. 16 is a view showing a state in which the horizontal position of the upper wafer and the lower wafer is adjusted. Fig. 17 is a view showing a state in which the vertical position of the upper wafer and the lower wafer is adjusted. The center portion of the wafer and the lower wafer (4) are shown to each other: an explanatory view of a state in which the lower wafer is in contact with the lower wafer. Illustration of the diagram. ', the surface of the round and the surface of the lower wafer abut each other Κίί, ίί曰 f fZ wafer bonding aspect of the illustration. Slightly profiled view, knowing the upper part of the H-up and the general direction of the structure of the lower face ^5_成杂_'Adjust the vertical center of the epi-Crystal® and T-Crystal®, and push the __ FIG. 25 is a view showing a center portion and a lower crystal of the day of the day in which the center portion of the circle is connected to each other in another embodiment. [Main element symbol description] 1 The joining system 2 is carried into the delivery station 3 Processing station cassette mounting table π匣 box mounting plate 20 wafer conveying unit 21 conveying path 22 wafer transfer device 30 surface activation device 28 201250898 40 surface hydrophilization device 41 bonding device 50, 51 transfer device 60 wafer Transfer area 61 wafer transfer device 70 processing container 71 carry-in/out port 72 gate valve 80 lower electrode 81 drive unit - 82 heat medium circulation flow path 83 heat medium introduction tube 90 electrostatic chuck 91, 92 film 93 conductive film 94 wiring 95 filter 96 high voltage power supply 1 〇〇 heat conduction gas supply hole 101 heat conduction gas supply pipe 102 focus ring 103 exhaust ring 104 power supply bar 105 integrator 106 first high frequency power supply 110 upper electrode 111 integrator 112 second high frequency power supply 120 hollow portion 121 Gas supply pipe 201250898 12 2 gas supply source 123 supply device group 124 baffle plate 125 gas discharge port 130 intake port 131 vacuum pump 132 intake pipe 150 processing container 151 loading and unloading port 152 opening and closing gate 160 rotating chuck 161 chuck driving portion 162 cup portion 163 Exhaust pipe 164 Exhaust pipe 170 Track 1 Π Nozzle arm 172 Washing arm 173 Pure water nozzle 174 Nozzle drive unit 175 Standby unit 176 Supply pipe 177 Pure water supply source 178 Supply device group 180 Washing tool 180a Brush 181 Washing tool drive unit 190 processing container 191 loading/unloading port 192 opening and closing gate 201250898 193 inner wall 194 loading/unloading port 200 transmitting portion 201 conveying path 202 wafer carrier 210 position adjusting mechanism 211 base 212 holding portion 213 detecting portion 220 turning mechanism - 221 holding arm portion 222 Adsorption pad 223 first driving portion 224 second driving portion 225 way 230 upper collet 230a, 230b, 230c region 231 lower collet 231a, 231b region 232 supporting member 233 shaft portion 234 chuck driving portion 240a, 240b, 240c attraction Tube 241a, 241b, 241c Vacuum pump 242 through hole 250 push member 251 push pin 252 outer cylinder 253 upper photographing member 260a, 260b suction tube 201250898 261a 261b vacuum pump 262 stopper member 263 lower photographing member 300 control unit 400 measurement unit A, B reference point

Dt, D2 interval

Cu S box

Wu wafer

Wui·surface

WlJ2 back

Cl匣 box

Wli surface WL2 back

Ct [1_Box WT laminated wafer

Gl, G2, G3 processing block T1 handling area T2 processing area (9 direction X, Y axis S1~S13 steps

Claims (1)

201250898 VII. Patent application scope: 1. A bonding device for bonding substrates to hold and hold a first substrate on a bottom surface; and placing a fine substrate: placed under the first holding member and pushed at the top _ heart portion a member that is provided with the contact 1 holding member and pushes the middle of the first substrate and 2, as claimed in the patent scope! The joining device of the item, the vertical coffee (four) contact 3 is relatively at 3, as in the joint arrangement of the second item of the patent application, the measuring unit's measurement makes the center plate of the first substrate the second '2' In the case of the push member of the second member, the outer peripheral portion of the second holding member is opposite or by the first! The superimposed substrate on which the substrate and the second substrate are bonded is set to be placed on the body. 2 substrate, 5, as in the joint application of the patent application, the horizontal. The first holding member or the second holding member 3 is relatively in the imaging member, which captures the surface of the first substrate; And a second imaging member that captures a surface of the second substrate; and moves the second rotation member and the second surface to move the reference image in the image captured by the first imaging member in the second image The base 6 of the second substrate in the image captured by the imaging member, and the bonding device according to the first aspect of the patent application, further comprising: a position adjustment mechanism that adjusts the horizontal direction of the i-th substrate or the second substrate 33 201250898 The turning mechanism rotates the surface and the back surface of the first substrate; and the transport mechanism transports the first substrate, the second substrate, or the first substrate and the second substrate in the bonded agricultural device. Substrate. Seven types of bonding systems including bonding devices for bonding substrates, comprising: a processing station including the bonding device; and a loading/unloading station that stores a plurality of first substrates, second substrates, or first = plates and The second substrate is joined to the superimposed substrate, and the touchable processing station carries or delivers the i-th substrate, the second substrate or the superposed substrate; the bonding device includes: a holding member that adsorbs and holds the second substrate on the bottom surface; a holding member disposed below the i-th holding member to mount and hold the second substrate on the top surface; and a pushing member disposed on the second holding member and pressing the center portion; the first storage member Dividing outward from the towel into a plurality of regions, and setting vacuum suction to the first substrate in the parent region; the processing station includes: a surface activation device that causes the bonding surface of the second substrate or the second substrate to be active a L if hydrophilization device that hydrophilizes the surface of the first soil plate or the second substrate that has been activated by the surface activation device; and the domain of the silk surface active recording and the silk sulfur hydration device a device for transporting the first substrate, the second substrate, or the superposed substrate; the first substrate 8 of the first silk surface hydrophilization device, and the bonding system of claim 7, wherein the connection device Nitrogen plasma is pulverized so that the first substrate or the second substrate can be spliced, and the level of the joint device will be recorded. The first holding member is adsorbed and held on the bottom surface. J substrate; second holding 34 201250898, which is placed on the lower f plate i of the first holding member and pushed, and is provided in the i-th holding member t = and can be set to the first substrate in each region The sinister arrangement step of arranging the second substrate held by the first holding member and the second substrate held by the holding member at a predetermined interval; and pushing the step to stop the first step afterwards! The holding member is suctioned at the center portion tf Ϊί, and the center portion of the center portion S of the first substrate is pressed by the urging member to abut against each other; and the 步骤"step" step is followed by the ith substrate In the center portion and the second base = to the ^ state, the * 丨 构件 构件 , , , , , , , , 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空In the joining method of the ninth aspect of the invention, the joining device includes the lifting and lowering of the first holding member or the second holding member in the vertical direction. In the pushing step, the first holding member or the second holding member is lifted and lowered in the vertical direction by the lifting mechanism while the portion of the second substrate is pressed by the pushing member, and further pushed The bonding method of the center portion of the second substrate is pressed against each other. The bonding method according to claim 10, wherein the bonding device includes a measuring portion that measures the second substrate. center The amount of movement of the urging member or the force applied to the urging member when the second substrate=the center portion is in contact with the urging member; in the pressing step, the center portion of the first substrate is detected based on the measurement result of the measuring portion Whether or not the center portion of the second substrate abuts and controls the operation of the elevating mechanism. 12. The bonding method of claim 9, wherein the surface of the 苐1 substrate and the second surface are respectively taken before the 5 hai configuration step The surface of the substrate 35 201250898 adjusts the relative position of the first substrate and the second substrate in the horizontal direction so that the reference point of the first substrate in the captured image and the reference of the second substrate in the captured image Point together. 36