TW201248764A - Junction device, junction system and junction method - Google Patents

Abstract

This invention relates to a junction device for conducting the junction between substrates. The junction device includes a first holding member for holding by sucking a first substrate on the bottom surface thereof, a second holding member disposed under the first holding member for holding, on the top surface thereof, a second substrate, a pressing member provided in the first holding member that presses against the central portion of the first substrate, and vertically movable guiding member(s) holding by sucking the first substrate so as to fix the location of the first substrate in the horizontal direction.

Description

201248764 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a joining device and a joining system in which each substrate is joined. [Prior Art] [0002] In recent years, semiconductor devices have been developed toward the south. ^ ^ ^ ^ ^ The complex semiconductor device of the body, and the wiring connection, etc. =; Jinji =: increase in the length of the line change 'causes the wiring of electricity [0003] Therefore, there is a document proposed to be a semiconductor device 3 ^ ^ 3 t >; 2 1ίΪ; ΐ 0 hereinafter referred to as "wafer" bonding. Laminating device, example == body; the state of the above configuration (hereinafter, the upper wafer is called a 曰, 曰曰rT^a® j} 0 center port (5 points of push pin; and support for the wafer The outer circumference of the circle is retracted from the spacers. When it is made; the two can generate voids between the J suppression wafers, which will be the joint between the wafers. First, at: ς proceed, in the state of 'using the push pin to push the center of the wafer on the wafer, ^ 5 wafer: abut. After that, the spacer supporting the upper wafer is retracted below and under the crystal _ whole抵 并 并 。 。 。 。 。 。 。 。 。 。 。 。 习 习 习 习 习 习 习 习 习 习 习 习 习 习 习 习 习 习 习 习 习 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 ♦Immediately solve the problem 1 [0005] 'Processing station;, when it is set, it is necessary to make the vacuum environment need to be very wafers stored in the processing chamber to reduce the shape. ', B,, '° fruit, aa round The amount of processing of the bonding process as a whole [0006] When the wafer f丄=up, when the push pin is used to push the phase of the upper wafer The upper wafer is supported, so the lower wafer [0007] has the above-mentioned problem, and the substrate of the present invention can be efficiently bonded at the same time. (4) Holes are generated between the substrates [Technical means for solving the problem] [0008] In order to achieve the object, the present invention provides a pushing member for pushing a holding member on a top surface of a substrate, and placing a second pressing member on the top surface, which is disposed on the j-th holding member, and is sheathed The first substrate is held in a square shape, and the position of the first substrate in the 1000-degree direction is fixed, and the surface can be oriented in the straight direction. [0009] According to the present invention, the energy of the i-th substrate can be adsorbed and held by the guiding member. The pusher member presses the center portion of the second substrate while pushing the lower portion, and further pushes the center portion 4 of the first substrate and the center portion of the second base (four) to each other. For example, the first substrate and the second substrate are When there is air between the substrates, the position of the first substrate that is held by the guiding member in the horizontal direction with respect to the second substrate does not vary. Therefore, the substrate can be bonded correctly. The second substrate can be stolen in the center of the first substrate In the state where the core is affected, the second substrate and the second substrate (four) substrate 201248764 are sequentially joined to each other. If, for example, the second substrate of the first substrate is in the air, the air is squeezed. It is released from the center portion to the outer peripheral portion. The substrate is correctly joined by 曰1. Moreover, ====JJ gap, high. 3, the ram is joined by the ram, and the substrate bonding process is processed. [0010] Containing an ί ϊυ 系 — — — — 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备The first substrate and the second substrate are bonded to each other; the first substrate; the first substrate or the second substrate is connected to the second substrate, and the first substrate or the (four) plate is placed live iiii ft A hydrophilization device that hydrophilizes the surface of the substrate and the surface of the substrate or the substrate; and the transfer region, the transfer device, the hydrophilic surface of the surface, and the substrate or the substrate. The joining device will have a surface in the form of a watch and a other evil sample, which is similar to the use of the engaging device; the device comprises: a first holding member, which is Hit on the board, the brother 2 a holding member provided below the first holding member, the member being a single if ^ plate; a pushing member disposed at the center of the first holding mountain; and a guiding member for adsorbing and holding the level of the first substrate The position of the direction is fixed and can be moved in the vertical direction. The bonding method includes: stopping the second substrate on which the second substrate held by the second holding member is disposed at a predetermined interval, and then stopping the adsorption and holding of the i-th holding member on the J-th substrate, The drawing member sucks and holds the first substrate, presses the center of the second substrate with the center of the second substrate by the pressing member 201248764, and pushes (four) the center portion of the second substrate, and the core portion a step of pressing the first substrate and a second substrate from the center of the first substrate in a state in which the center and the portion of the second substrate of the first substrate are subjected to the occupation pressure The joints of the outer peripheral portions are sequentially joined, [cf. the efficacy of the prior art] [0012]. It is possible to prevent the wire from going between the wires and to be correct and efficient. [Embodiment] [Best Mode for Carrying Out the Invention] [0014] The embodiment of μ. Fig. 1 is a view showing the connection of the present embodiment; ==12 silk secret 1 in the outline [0015] The following is shown in Fig. 3, for example, two substrates (wafer Wu, bonding. Hereinafter, the upper side The configured wafer is used as the second substrate, which is called "the upper wafer will be "fine = two;: surface Wu", and the surface opposite to the surface Wu will be called ^ ^ 1 w ^ Ta, K Wl ^, [0016] The body connection unit 2 and the processing station 3 are provided as shown in Fig. 121, and the fine person delivery station 2 can receive the processing device Wu, m, and stack separately from, for example, the outside. Each of the wafers % performs the predetermined processing 201248764 [0017] The loading and unloading station 2 is set up

A number of (4) such as 4) g box placement $ set by the smith = set, placed in the complex direction (up and down direction in Figure 1), the plate 11 in the horizontal direction X 11, in the outer column relative to the joint system i . The box can hold the boxes Cu, a, cT. «, °1 When Cu, α, & is carried in or out, the wafer Wu, a plurality of wafers f wide 5 ^ station 2 constitutes a plurality of upper box mounting plate π, and the face . In addition, outside Kun, you can also use the 丨 盒 box to return to the ^ ^, sample 'any mosquito. Another reason is to make the upper wafer Wu and the lower wafer /= white. That is, a cassette which is separated by various conventional laminated wafers wT can be used. ^ H^ Ordinary wafers and one of the other middle ones are used as the middle of the line, and the multiple boxes are used as the super-packaged wafer WT storage S-box® for recycling. [0018] The movement around the orphan axis (theta direction) is arbitrarily moved, and the day yen Wu, Wl, and the stacked wafer can be carried between the transfer processing devices 50 and b of the third processing block of each of the processing stations 3. wT. [0019] Holding a plurality of (for example, three) processing areas 2^2 and G3 in each county, for example, on the front side of the processing station 3 (negative in the X direction of Fig. 1) The first processing block ^ is placed on the f-plane side of the processing station 3 (the second processing block G2 is set in x of Fig. 1). In addition, the block G3 in the processing station 3 = station side (Fig. The third processing area is provided in the negative direction side of the Y direction. [0020] = If the surface of the wafer %, & the surface of the wafer is activated, the surface is activated. For example, in the second processing block G2, the surface Win Wli of the wafers Wu and Wl is hydrophilized by, for example, pure water, and the surface of the surface, the cleaned surface is hydrophilized. Crystal The bonding apparatus 41 in which the circles Wu and W1 are joined is arranged side by side in the horizontal direction in the Y direction from the loading/unloading station 2 side. [0022] For example, in the third processing block G3, the wafer Wu shown in FIG. 2, The transfer cleavage 50, 51 of the WL and the most rounded WT is shown in the wafer handling area 60 surrounded by the first processing block G1 to the third processing area (10) from bottom to top and on the day [0023]. For example, a round transporting device 61 is provided with a transport arm that can move freely around, for example, the vertical direction, the horizontal direction (γ can be 1° 曰), or the rear of the rear charm axis. The transport device can be moved in the Japanese yen transporting area 60, and the day n ^, 61 is placed, and the surrounding first processing (four) G1 H ® team, the superposed wafer Wt is transported [0025] 201248764, and the cycle is introduced. The heat medium is adjusted to the desired temperature in the heat medium circulation flow path electrode 81, and then the lower temperature of the lower wafer is placed on the top surface of the wafer. [0028] ~ 犹环ί : : The mechanism is not limited to the heat medium [0029] The use of cold shackles, heaters and other institutions. 90 ° it Amo ^ ^ ' WtAm - a polymer insulating material such as ===, etc. The conductive film 93 is connected to the conductive film 93 such as copper undulation by LL. = electric yoke 95 and high voltage power supply 96 pressure, filter, waver 95 cut off fine into any DC voltage of high voltage on the conductive (four) high voltage guide using the electric clamp like this, quietly) to static electricity [0030] 1 Two-way supply heat conduction = exhausted 'in the lower part. Top [0031] The ini f heat conduction gas supply hole 100 is connected to the blood god 〇1 as shown in FIG. The heat conduction gas supply pipe 101 is configured to conduct a gas supply pipe. The gas supply source connects the heat conduction gas of the crucible or the like (not shown) to the electrode 80 between the back faces Wu2 and W12 of the circle fn and W1. The top surface of the top surface faces the wafer ": There is: by this, it is possible to omit the 201248764 heat transfer common hole (10) and the heat conduction gas supply pipe 101 when the material can be transferred to the pure material. 'After the age of the shirt, the incident butterfly (four) = material ^ [0034] between the electrode 80 and the inner wall of the processing container 70, with the heart of the heart" 理容哭%〇ί ring 103 set a plurality of baffles. The exhaust gas production & ring *,; _ ring bribe coffee (four) to 3, where f electricity: ======_ connection. 1 ask the frequency power supply 1 〇 6 connection. The upper electrode 110 is disposed above the upper portion 80 and the upper portion 80 of the upper portion 80. The interval between the bottom surface of the lower portion and the upper portion 80 can be adjusted by the driving portion 8 [〇〇37] 】 With the third ❻ == I container, etc., the integrator lu 110 6 〇 MHz 112 2 high frequency ^ source 112 to the lower electric [. 2] electric house, in the processing container 70 The internal generation of the electropolymer 1〇 is applied to the conductive film 93 of the electrostatic chuck 90. The high-frequency light is applied to the first high-frequency power supply of the high frequency. The two-way frequency power supply 112 is provided with a control processing gas flow 122 by a control unit 3 〇〇 [0039] l20° 120 莱 122 remote communication unit 121 and a gas supply supply pipe 121 for storing the processing gas therein. = supply unit group 123 of the member. Then, the gas supply source 蛉 191, 'mouth, the first 虱 sister, the flow rate of the supply device group 123 is controlled by the gas supply: r hollow portion 12. In addition, the process gas can be The inner surface of the [0040] one is provided with a plurality of small holes provided on the bottom surface of the plate 124 for promoting uniform diffusion of the processing gas. The upper electrode 110 120 70 [0041] is under the tube 13 The air inlet 130 is formed. The air inlet 130 and the air suction 131 iiit 5 ! 31 „ 2: The sodium weight environment is depressurized to a predetermined degree of vacuum. The bottom of the w and ΐϋι electrode 8g is provided to support the wafer %, two f (not shown) from below. The lift pin insertion is formed in the lower portion 8u, which is not shown). It can protrude from the top surface of the lower electrode 8A. Chuan's structure of the above-mentioned table sulfur hydration unit 4G. Surface hydrophilization device 4U = A processing container 15 可 that can be sealed inside is not shown in Fig. 6 . In the processing container 15A, the side of the wafer transfer area 60, as shown in Fig. 7, the loading/unloading port 152 of the wafer Wu: °W1 is provided, and the opening and closing gate 152 is provided in the loading/unloading port 151. In the central part of the processing state within 15 ,, the holding wafer is set as shown in Fig. 6 201248764

Wu, Wl rotating rotating chuck 160. The rotary chuck 160 has a horizontal top surface on which a suction port (not shown) capable of attracting, for example, wafers Wu, W1 is provided. By the suction of the suction port, the wafer can be adsorbed and held on the rotary chuck 16〇, and the rotary chuck 160 can be provided. The chuck driving unit 161 having a member such as a motor can be provided. The chuck drive unit 161 rotates at a predetermined speed. Further, the chuck driving portion 161 is provided with an elevating driving source such as a cylinder, and the rotating collet 16 〇 [_6] "^ is disposed around the rotating collet 160 to block the liquid from the wafer % '[ It is recycled to the cup 162. An exhaust pipe 164 that sucks and discharges the return pipe 163 and the gas in the cup portion 162 is connected to the bottom surface of the cup portion 162. The negative direction of the 杯 cup direction 162 in the χ direction (the lower path no in FIG. 7 , the direction (the horizontal direction in FIG. 7 ) extends 170. The negative direction of the ¥ direction of the rail portion 162 ( FIG. 7 ) The left side of the side is it0 on the outer side of the positive direction (the right direction of Fig. 7) on the side of the τ0. In the ϋΐ nozzles 71 and the wash arm 172.

潫 171 as shown in FIG. 6 and FIG. 7 support the 曰 曰 circle wn, shame / {丘 A at: ΐ, 1 屯 7 (two) two: mouth I: by the nozzle driving unit 174 shown in Fig. 7, part 162 In the Y-square two-passive hunting, the pure water nozzle 173 can move from the outer surface of the wafers Wu, iL disposed in the cup to the cup 162 to the radius of the cup 162. The wafer m is supplied with pure water through the nozzle driving unit 174 along the wafer wu, and the pure water nozzle 173 is supplied with the pure water. Further, the supply unit stores the pure water supply source m° of the pure water, and the supply unit group 178 including the pure water flow control valve or the flow rate adjustment unit 12 201248764. [0050] Washing f 172 supports washing washing tool 180. For example, a plurality of linear or sponge-like brushes 180a are provided at the front end portion of the washing and cleaning tool 18A. The washing arm 2 is arbitrarily moved on the rail 170 by the cleaning tool driving portion 181 shown in FIG. 7, and the washing and cleaning tool 180 is moved from the outer side of the negative direction side of the cup portion 162 in the Y direction to the cup. Above the center of the wafers Wu and W1 in the portion 162. Further, the washing arm 172 can be freely moved up and down by the washing and tool driving unit 181 to adjust the height of the washing machine 180. [0051] Further, in the above configuration, the pure water nozzle 173 and the washing and cleaning tool 18 are respectively supported by different arm portions, but may be supported by the same arm portion. In addition, the pure water nozzle 173 may be omitted. The pure water is supplied from the washing and washing tool 18, and the discharge unit for discharging the liquid and the exhaust pipe for discharging the gas atmosphere in the processing container 150 are connected to the bottom surface of the processing container 150. In the surface hydrophilization device 40, an ionizer for preventing static electricity (the structure of the above-described bonding device 41 shown in [0052] is shown. The bonding device 41 is a processing container 190 inside the region of Fig. 8. The crystal in the processing container 190 The round conveyance 191 i is provided with the wafer WU, the stack, and the stacked wafer Wt. The loading/unloading opening 191 is provided with an opening and closing gate 192. The area thin _193 is divided into the conveying area T1 and the side surface of the processing. The handling area (4) of the processing container 190 is carried in and out of the outlet 194. The wafer team, the W1, and the stacked wafer Wt are not placed on the soil 3 [0054]

A transmission portion for temporarily placing the wafer H WT is provided on the positive side of the Wu and wL directions. The transmission unit 200 is provided, for example, in two stages. 13 201248764 Two of the wafers Wu and W1 and the superposed wafer Wt can be simultaneously placed. In the transport area T1, a wafer carrier 202 is provided which is arbitrarily movable in the transport path 201 extending in the X direction. The wafer carrier 2〇2 can also be arbitrarily moved in the vertical direction and around the vertical axis as shown in FIGS. 8 and g to transport the wafer team between the handling area T1 or between the handling area and the processing area T2. , team, superimposed wafer wT. Further, in the present embodiment, the conveyance path 2〇1 and the crystal body 202 constitute a conveyance mechanism. In the negative direction side of the X direction of the conveyance region T1, a position adjustment mechanism 210 that can adjust the orientation of the wafer Wu and the horizontal direction of the team is provided. The position adjusting mechanism 210 includes a base 211, a holding portion 212 that sucks and holds the wafer %, and rotates the group, and a detecting portion 213 that detects the wafer % and the position of the cut portion of the team, as shown in Fig. 10 . Then, the position of the wafer % and the side rotation detecting unit 213 are used to adjust the position of the notch portion of the wafer % and W1, thereby adjusting the edge of the wafer. The position of P and the orientation of the horizontal direction of the wafer machine and machine. [0057] In addition to the 1st j, an inverting mechanism 220 is provided in the transporting area, which moves between the super-filaments and the F-regions T2, and the back surface of the upper wafer 1 is reversed. The holding arm portion 221 holding the upper wafer Wu is shown. 999,) 21 sighs the adsorption pad that adsorbs the wafer WU and keeps it horizontal. It is supported by the first drive unit 223. With the first expansion of the waterbed

= Road: === and, the J-station mechanism 210 and the upper-level Yanzhou executor 225, which will be described later, also have a handling display in the position adjustment, and the superimposed wafer == work 201248764 Crystal _ surface 盥 back:: ^ The structure of the description of the situation as long as it can be in the treatment area Τ2. Furthermore, in addition, the inverting mechanism 220 may be provided with an inverting mechanism attached to the bit body 2Q2 of the rotating mechanism 220, and the other adjusting mechanism 21 is attached to the adjusting mechanism 21. In addition, other handling mechanisms can be placed at the location. The rotating mechanism is provided at the position of the turning mechanism 220. [0058] The lower end of the adsorption holding _ 6, the outer (the upper σ 卩 硕 230 230), and the mF part of the top surface 231 > Cool head 231 wafer wL pair = set. The top surface of the wafer Wu and the lower chuck 231 are kept under the holding surface S:4; ^^234 TM can be arbitrarily moved toward the vertical side 234. Further, the shaft of the chuck driving unit 231 can be rotated around the shaft. Correction, in the lower chuck, a lifting pin that supports the lower wafer from below and lifts it up (the top surface of the figure protrudes. Further, in the present embodiment: and the chuck driving portion 234 constitutes a moving mechanism District Chengjia? 23° 'As shown in Figure 12, it is divided into a plurality of (for example, three) two: a"3〇b, 230c. These areas 230a, 230b, 230c, as shown in Figure 13 upper collet 230 The center portion is disposed outwardly in the outer peripheral portion. Then, the shape is circular in plan view, and the regions 230b, 23〇c are viewed from the plan view as rings in the σ regions 230a, 230b, and 230c, as shown in FIG. 15 201248764 Suction tubes 240a, 24〇b, 24〇c for adsorbing and holding the upper wafer team. Each of the suction tubes 240a, 240b, 240c is connected to a different vacuum pump 241a, 241b, 241c.

Therefore, the upper chuck 230 is disposed such that the upper wafers Wu can be vacuum-sucked in the respective regions 23a, 23b, and 230c. J [0061] A through hole 242 penetrating the upper chuck 230 from the thickness direction is formed in the center portion of the upper chuck 230. The center portion of the upper chuck 230 is formed with a center and a portion of the upper chuck 23 that is sucked and held by the upper crystal. The push member 251, which will be described later, is inserted into the through hole 242. On the top surface of the upper chuck 230, a pushing member 25G that presses the center portion of the upper crystal jjj Wu is provided. The urging member 250' is provided with a gas red structure, and is provided with a push pin 251 and an outer cylinder 252 as a guide portion when the push pin 251 is moved up and down. The push pin 251 is inserted into the through hole 242 by, for example, a drive unit (not shown) in which a motor is built, and is arbitrarily raised and lowered in the vertical direction. Then, the push member 25A pushes the center portion of the upper wafer Wu and the lower wafer core to abut each other at the time of bonding of the wafer team and the team to be described later. [0063] At the front end portion on the upper wafer side of the push pin 251 of the push member 250, a guide member 253 that adsorbs and holds the upper wafer Wu is provided. The guiding member 253 is connected to the vacuum pump 2^5 via the pusher r 251 and a suction pipe 254 connected to the base end of the push pin 251. Therefore, after the push pin 251 has a hollow structure in which air can flow inside, the guide member 253 can adsorb and hold the upper wafer Wu and fix the position of the upper wafer claw. Further, if the push_251 is moved up and down in the vertical direction, the V member 253 is also moved in the vertical direction. [0064] The ☆ section chuck 230 is provided with the upper photographing member as the photographing member of the younger 2 who photographed the lower wafer team. The upper photographing member 256 uses, for example, a wide-angle type ccd, 目. In addition, the upper photographing member 256 may be disposed on the upper collet wo. [0065] 16 5 201248764 The lower collet 231, as shown in FIG. a plurality of regions (for example, two regions 231a and 231b). The regions 231a and 231b are sequentially disposed from the central portion of the lower chuck 231 to the outer peripheral portion. Then, the region 231a is circular in plan view, and the region 231b is viewed from above. Each of the regions 231a and 231b is provided with suction pipes 26a and 260b for adsorbing and holding the upper wafer Wu, respectively, as shown in Fig. 12. Each of the suction pipes 260a and 260b is different from the vacuum pump. 261a, 261b are connected. Therefore, the lower chuck 231 can set the direct air suction to the lower wafer team in each of the regions 231a, 231b. [0066] In the outer peripheral portion of the lower chuck 231, the wafer prevention is prevented, The team and the superposed wafer WT are slid from the lower collet 231 and slide off the stop member 邡 2. The stopper member = extends in the straight direction, and the top portion is at least slightly lower than the lower portion _. In addition, the stopper member 262 is as shown in the figure 14 shows the outer circumference of the chuck 231 A plurality of, for example, 5 [0067] The lower head 231' is provided as shown in Fig. 12, and the camera member (10) === provided as the second imaging member of the surface I can be set using, for example, a wide-angle type CCD camera. The lower collet 23 is 丨. The photographing member 263 can also be [0068] The above joint system 1 is provided with a program storage unit image control unit, for example, a computer such as a computer, as shown in Fig. 1. The control stores the material, which can be controlled at The processing of the joint program storage unit Wt. In addition, the program is stored in the medium, and the wafers of the Japanese, Wu, WL, the superimposed wafer device, or the transport device are used to control the wafers for controlling the various processes described above. 4糸 of the bonding process: move: to achieve the hard disk read in the bonding system ^ (, _ can also be recorded in a computer readable memory such as computer card, etc. H 2 (), magneto-optical disk ( MO), memory 3〇〇. ^Auxiliary from the memory medium Η installed to the control unit [0069] Next, the description of the ridge (4) on the bonding system 1 made of crystal 201248764 = Figure 15 shows the relevant wafer bonding The main processing [0070] first received, a number of wafers The cassette Cu, the storage box, and the C box Ct are placed in the loading and unloading: = two I mounting plates 11. Then, the wafer handling device 2 2 takes the circle Wu 2 to the third of the processing station 3 The processing block is turned to the surface of the device 6U_(4), and the surface of the surface (4) is transferred to the top surface of the lower electrode 8G. Thereafter, the wafer 退出ί [4 tongue device 30 is withdrawn, the valve 72 is closed. , through the suction port 130, the internal environment of the virtual environment is decompressed to a predetermined straight space, 7 70 ~ 2. 5T0rr). In the narrow, when, for example, 67Pa to 333Pa (〇. 5Τ〇ιτ 7〇, her t-maintains in the above-mentioned predecessor' will process the container-[0073] one after another 1*:;^?! 1°93' The power generated by the high-voltage house, ^^^疋, according to the top surface applied to the static cooling head 90. In addition, the lower Qiu Lei said that Wu is electrostatically adsorbed to the lower electrode ring flow path 82. Holding the wafer Wu on the predetermined adsorption, the first high frequency power source 106 is connected from the upper electrode 110 by the heat medium according to the degree of [0074], for example, the bottom gas of 25t~3"C. The inside of the container 70 is a frequency voltage. If so, the upper electric field is increased by, for example, 60 MHz, and the electric field is supplied to the processed electric field by the electric field. 18 201248764 [0075] The plasma of the processing gas is used (hereinafter sometimes The surface of the upper wafer (4) on the lower electrode 8G is w-formed; =")' The organic matter on the surface ww is removed. Further, the oxygen U = oxidation of the water t-plane W (1), that is, hydrophilization. w some energy 'the argon plasma positively' (the w: the organic matter removed. In addition, the argon plasma also has a chaotic body cap含有 = = 6 6 6 6 = = = = = = = = = = 6 6 6 6 6 6 6 6 ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® 61 is transmitted to the rotating collet 16 〇 by its suction < 曰曰 round [0077] round ' Ϊ 臂 arm 171 moves the standby portion 175 ❾ pure water nozzle 173 to the upper side of the upper crystal i while the washing arm 172 makes the washing cleaning tool 180 Move w ί on the wafer Wu. If so, the surface y of the upper 曰曰, the 虱 虱 ,, make the surface, hydrophilization. In addition, the cleaning tool 18 ◦, the upper wafer 【 [0078] technology The wafer is transferred to the interface t of the second processing block G2 by the wafer transfer device 61. The upper wafer Wu loaded into the bonding device 41 is transported to the position adjusting mechanism 210 through the transfer port. Then the position adjusting mechanism 21〇曰曰the direction of the horizontal direction of the upper circle Wu (the step of FIG. 15 [0079]; (4) The adjustment mechanism 210 transfers the upper wafer (10) to the holding mechanism 22 of the turning mechanism 220, and then in the handling area T1, the holding arm portion 221 is turned over, whereby the face and the back face are reversed by the 19 201248764 (step S4 of Fig. 15). In addition, the upper wafer _ surface and back _ flip can also be performed in the movement of the flip mechanism 220 described later. [0080] The flip structure 220 moves toward the upper cool head 230 side, and the upper wafer _ 22G Transfer to the upper chuck 23 (). The back side of the upper wafer % - is clamped by the upper clamp 241b 2^1 = (step of Figure 15). At this time, all the vacuum pumps 241a, = 乍' are placed in the upper chuck 230 All areas 230a, 2, 23〇c, access to the vacuum to attract. The upper wafer Wu is placed on the upper chuck 230 before the wafer I is transported to the fifth device 41 as will be described later. Further, when the upper chuck 23 is attached to hold the upper wafer Wu, the guiding member 253 can vacuum suction the upper wafer % to stop the vacuum suction. In the present embodiment, the vacuum suction w of the guiding member 253 is stopped. [0081] The period of the above-described steps S1 to S5 is performed for the upper wafer %, and then the processing of the lower wafer team is continued after the upper 曰曰0 Wu. First, wafer transfer removes the lower wafer W1 from the cassette α and transports it to the processing station 3. Then, the lower wafer W1 is transported to the surface-activated radish 30 by the wafer transfer device 61, and the surface Wli of the lower wafer team is activated (step S6 of FIG. i5). Further, the activation of the surface of the lower wafer W1 in the step S6 is the same as the above-described step S1. Then, the lower wafer W1 is transported to the surface hydrophilization device 40 by the wafer transfer device 61, and the surface WL1 of the lower wafer W1 is hydrophilized while the surface is shame-washed (step S11 of Fig. 15). Further, the hydrophilization and cleaning of the surface Wli of the lower wafer W1 in the step S7 are the same as those of the above-described step S2: the detailed description thereof will be omitted. [0084] Thereafter, the lower wafer W1 is transported to the bonding apparatus 41 by the wafer transfer device 61. The lower wafer W1 of the joining device 41 is transported by the transfer unit 200 to the position adjusting mechanism 210 by the wafer carrier 2〇2. Then, the position adjusting mechanism 210 adjusts the seating direction of the lower wafer W1 in the horizontal direction of 20 5 201248764 (step S8 of Fig. 15). After that, the lower wafer W1 is transported by the wafer carrier 202 to the lower chuck 23, and the lower chuck 231 is sucked and held (step S9 of FIG. 15). At this time, f ' is operated by the air pumps 261a, 261b, and the vacuum is attracted to the true 3 circle 1 of all the regions 231 of the lower chuck 231. Then, the back surface of the lower wafer is held by the 'head 231, so that the surface of the lower wafer W1 is rolled toward the upper 4 clip. [0086] Next, the wafer holder and the lower clip are held on the upper chuck 230. Perform horizontal position adjustment. As shown in Figure 16, at ^

The reference point B on the Wu wire surface is turned on.) For example, the reference points A and B formed on the wafer are used to make the paste ==== ^ to capture the surface of the underlying crystal. Then, after adjusting the horizontal direction of the lower wafer WL, 'the flat direction of the image taken by the lower collet 231 is taken by the photographing member 256, so that the upper position and the lower photographing member are 23! of the reference point a moves in the horizontal direction to adjust the position of the clamp; the portion 234, so that the lower chuck adjusts the position of the upper crystal and the lower crystal = water ^ direction. If it is [0087] 100,000 position (Step S10 of Fig. 15) The mechanism adjustment circle is still = although steps S3 and S8 are performed by the step S10 of the position adjustment mode, the 曰 is slightly adjusted. In addition, in the present embodiment, the reference points A and β are also The predetermined pattern formed on the team can be used as the reference point for the outer peripheral portion and the notched portion. '^ ′'. For example, the wafer team can be used, and the lower chuck 231 201248764 f ' can be placed at a predetermined position by the chuck driving portion 铷 as shown in Fig. 17 . At this time, the lower wafer is disposed in such a manner that the interval _ between the surfaces Wui of the wafer Wu on the wafer 1 is a predetermined distance 表 =). For example, the position of the wafer (4) in the vertical direction (step S11 of Fig. 15). In addition, in step (four) n W two - 23 ° a, 230 in all areas of the upper chuck 23 °. , on the ί 231 ΐίΓί empty attraction. Similarly, in the step-to-step SU towel, the lower wafer team is subjected to direct space suction in all the regions 231a and 231b of the lower chuck. [0089] After n work, as shown in FIG. 18, the vacuum chucking of the upper wafer chucks from the suction chucks 240b, 240c is stopped at the upper chuck 23 (), and the guide member 253 is used to guide and hold the crystal. Round Wu. After that, Lee ‘25. The driver's push pin 251 pushes the center of the wafer team to make the upper wafer team lower = this 4, pushing the pin 251 to apply the force of the push lock 251 to 70#m without the upper wafer Wu. , for example, 2〇〇g. Further, when the push member 251 is lowered, the relationship of the guiding member 253 is not deviated from the position of the upper wafer machine in the horizontal direction with respect to the lower wafer team. Then, as shown in Fig. 19, the pushing member 25 pushes the pressing portion to bring the center portion of the upper wafer Wu and the center portion of the lower wafer W1 into contact with each other (S12). Further, at this time, the surface Wui of the upper wafer Wu and the entire surface of the lower crystal plane WL1 are in contact with each other. Round 7 [0090] Thereafter, the center portion of the pressed upper wafer Wu and the center portion of the lower wafer wL are joined (the thick line portion in Fig. 19). That is, since the surface t of the upper wafer team and the surface Wu of the lower wafer WL are activated in steps S1 and S6, respectively, first, a van der Waals force is generated between the surfaces Wm and Wu to make the surface Wui and Wli are connected to each other. Thereafter, since the surface Win of the upper wafer Wu and the surface Wli of the lower wafer W1 are hydrophilized in steps S2 and S7, respectively, the hydrophilic group hydrogen between the surfaces I and Wu is combined, and the surface Win and Wu are strong and stable. Ground to each other. Then, in a state in which the center portion of the upper wafer claw and the center portion of the lower wafer W1 are pressed, the above-described bonding gradually increases from the upper wafer W (the center portion of the upper portion W) to the outer peripheral portion. As shown in Fig. 20, the upper wafer Wu 22 201248764 and the lower wafer wL are joined to each other (step S13 of Fig. 15). Thereafter, the vacuum of the L-pair is guided, and the upper chuck 0 is made on the money shaft member 25G. Stopping the lower chuck 231 from the suction tubes 26〇a, 260b to the lower circle L, [= bow], the lower head loss 231 stops the adsorption holding action of the lower wafer WL. The stacked wafer WT' is transported by the wafer transfer device 51, and then transported to the wafer carrier 2 of the transfer station 2 to the PCT box of the g-box mounting plate u. Engaging processing of Wu and WL. &Dry day of hardening [0092] According to the above embodiment, in step S12, in the state in which the epitaxial wafer Wn is held by the attracting, the member 25Q is pushed while pushing Press on

Wll's order-side-side causes the upper crystal gj W (J to fall, and then pushes the center portion of the upper wafer and the lower wafer W1 to abut each other. If so, even if, for example, the upper crystal When there is air between the circles W1, when the upper wafer Wu is lowered, the position of the upper wafer Wu in the horizontal direction with respect to the lower wafer team does not vary due to the relationship of the guiding members 253. The wafer machine and the team can be correctly arbitrarily. [0093] In the step S13, in the state in which the center portion of the upper wafer Wu and the lower wafer team are pushed to the push state, The upper wafer Wu and the lower wafer team are sequentially joined from the center of the upper wafer to the outer periphery. If, for example, there is air between the wafer teams under the upper wafer team, pores may be formed. Under the air, the air will be on the outer side of the wafer W1 and the upper wafer Wt!, so that the air can be released from the center to the outer periphery between the wafers Wu and Wl. Therefore, it is possible to prevent pores between the wafers and W1, and to make the wafers Wu and Wl more accurate. sa [0094] " According to the present embodiment, it is not necessary to form a vacuum environment in the gas environment when the wafer team WL is bonded as in the prior art, so that the wafers Wli and Wl can be efficiently bonded in a short time, thereby improving wafer bonding. The amount of treatment processed. [0095] 23 201248764

[0096] In addition,

One is engaged in .w q from Dingri yen wu, Wl. In addition to the bonding device 41, the 爯L 3 ΐ system 1 further includes a surface activation device 3 that activates the wafer team, the surface of the WL, and the UV, and the surface Wui, t can prevent the wafers Wu, W1. The superimposed wafer cassette is from the lower part [0097] 230 and the lower chuck 231, and since the joining device 41 is used to engage the position adjusting mechanism 210 and the rotating mechanism 220, it is possible to simultaneously Since the surface hydrophilizing device for cleaning the surface Win and Wu is used, the wafers Wu and W1 can be efficiently bonded in one system. Therefore, it is possible to further increase the throughput of the wafer bonding process. y ^ [0098] In the above embodiment, the guiding member 253 is disposed at the front end portion of the pushing pin 251 of the pushing member 25A, except for the guiding member 253 as shown in FIG. 21, The circle Wu is provided with other plural guiding members 400. The guiding member 4A has the same configuration and function as the guiding member 253. The guiding member 4 is connected to the vacuum pump 255 through an suction pipe (not shown). Then, the bow guide member 4〇〇 can adsorb and hold the upper wafer Wu. Further, the guiding member 400 is supported by a supporting member 401 provided, for example, on the bottom surface of the upper chuck 230. The support member 401 is arbitrarily expandable and contractible in the vertical direction, and the guide member 400 can be arbitrarily moved in the vertical direction by the support member 401. [0099] At this time, in addition to the guiding member 253, the plurality of guiding members 400 suction 24 201248764 ζ S12 using the push member to move, and the center portion of the upper day® Wu causes the upper wafer Wu to descend. In the case of Shanghai and Anhui, the upper wafer Wu is prevented from joining the wafers Wu, Wl more correctly than the lower wafer.卩100,000 (10) positional deviation. Therefore, in the upper embodiment 230, in addition to the guiding member 253, the horizontal direction of the round claw = the difference of 1 is surely prevented from being epitaxial [0101] and then in the above embodiment. , [0102] The lower chuck 231 230 is moved toward the vertical by the chuck driving portion 234, but the upper chuck can be moved arbitrarily. Both of the heads 231 can be arbitrarily raised and lowered in the vertical direction and facing the water [0103] in the solid state, if the wafer [Wl is stronger and the surface is activated, the device is activated.] From this point of view, it should be used in the table. Nitrogen is preferred. This oxygen argon gas is only used to make the wafers in the crystals of the crystals of the wafers of the wafers of the wafers of the wafers of The total bonding time is further shortened, and the position of the wafer % is different. That is, the bonding is started, so that the wafer H can be further prevented. [0104] 25 201248764 In addition, a part of the above embodiment can be The same functions and effects can be obtained by combining the embodiments. The preferred embodiments of the present invention are described above with reference to the drawings, but the present invention is not limited to the embodiments. The present invention is of course also within the technical scope of the present invention, and the present invention is not limited to the embodiments, and may be used in the scope of the invention. Adopt various implementation states In the present invention, the substrate is applied to other substrates such as an FPD (flat panel display) or a reticle for a photomask, in addition to the wafer. '[Simple description of the drawing] Fig. 1 is a joint of the present embodiment. Fig. 2 is a schematic side view showing the internal structure of the bonding system of the present embodiment. Fig. 3 is a schematic side view showing the structure of the upper wafer and the lower wafer. Fig. 4 shows the surface activity. Fig. 5 is a schematic longitudinal cross-sectional view showing the structure of the surface hydrophilization device, Fig. 7 is a schematic cross-sectional view showing the structure of the surface hydrophilization device. Fig. 8 is a schematic cross-sectional view showing the structure of the joining device. Fig. 9 is a schematic longitudinal cross-sectional view showing the structure of the joining device. Fig. 10 is a schematic side view showing the structure of the position adjusting mechanism. Fig. 12 is a view showing the upper chuck and the upper chuck. Fig. 13 showing the structure of the lower chuck is a bottom view of the upper chuck as seen from below. Fig. 14 is a schematic side view showing the structure of the inverting mechanism from the height of the body.

Fig. 17 is a view showing the adjustment of the vertical position of the upper wafer and the lower wafer. 26 201248764. Fig. 18 is an explanatory view showing a state in which the upper wafer is lowered. Fig. 19 is an explanatory view showing a state in which the center portion of the upper wafer and the center portion of the lower wafer are pressed to abut each other. Fig. 20 is an explanatory view showing a state in which the upper wafer and the lower wafer are joined. Fig. 21 is a schematic longitudinal sectional view showing the construction of the upper chuck portion and the chuck of another embodiment. The outline of the structure of the upper chuck and the lower head of the other embodiment is shown in abbreviated manner. [Main component symbol description] 1 joining system 2 loading and unloading station 3 processing station cassette mounting table cassette mounting plate 20 wafer conveying unit 21 transport path 22 wafer transfer device 30 surface activation device 40 surface hydrophilization device 41 bonding device 50, 51 transfer device 60 wafer transfer region 61 wafer transfer device 70 processing container 71 loading and unloading port 72 gate valve 80 lower electrode 81 driving Department 27 201248764 82 heat medium circulation flow path 83 heat medium introduction pipe 90 electrostatic chuck 91, 92 film 93 conductive film 94 wiring 95 waver 96 high voltage power supply 1 〇〇 heat conduction gas supply hole 101 heat conduction gas supply pipe 102 focus ring 103 row Air ring 104 power supply rod 105 integrator 106 first high frequency power supply 110 upper electrode 111 integrator 112 second high frequency power supply 120 hollow portion 121 gas supply pipe 122 gas supply source 123 supply device group 124 baffle 125 gas discharge port 130 Suction port 131 Vacuum pump 132 Suction tube 150 Processing container 151 Loading and discharging port 152 Opening and closing gate 201248764 160 Rotating chuck 161 Chuck driving portion 162 Cup portion 163 Outlet pipe 164 Exhaust pipe 170 Track 171 Nozzle arm 172 Washing arm. 173 Pure water nozzle 174 Nozzle driving unit 175 Standby unit 176 Supply pipe 177 Pure water supply source 178 Supply device group 180 Washing cleaning tool 180a Brush 181 Washing tool drive 190 processing container 191 loading/unloading port 192 opening and closing gate 193 inner wall 194 loading and discharging port 200 transmitting portion 201 conveying path 202 wafer carrier 210 position adjusting mechanism 211 base 212 holding portion 213 detecting portion 220 turning mechanism 201248764 221 holding arm portion 222 Adsorption pad 223 first drive unit 224 second drive unit 225. 230 upper collet 230a, 230b, 230c area 231 lower collet 231a, 231b area 232 support member 233 shaft portion 234 chuck drive portion 240a, 240b, 240c Suction tube 241a, 241b, 241c Vacuum pump 242 Through hole 243 Through hole 250 Pushing member 251 Pushing pin 252 Outer cylinder 253 Guide member 254 Suction tube 255 Vacuum pump 256 Upper photographing member 260a, 260b Suction tube 261a, 261b Vacuum pump 262 Lowering member 263 Lower portion The photographing member 300 control portion 400 guide member 401 support member 30 201248764 A, B reference point D interval

Cu box

Wli wafer

Wui surface

WlJ2 back

Cl匣 box

Wl wafer

Wli surface

Wl2 back

Ct box

Wt laminated wafer G1, G2, G3 processing block ΤΙ handling area Τ2 processing area 0 direction X, Υ axis S1~S13 steps

Claims (1)

201248764 VII. Patent Application Range: One type of bonding device that joins the substrates, including: a member that adsorbs and holds the i-th substrate on the bottom surface, a second holding member that is disposed on the first surface and holds the second substrate, and a lower portion of the holding member that carries the pushing member on the top surface, and is disposed on the third surface Holding the core portion; and the middle guiding member that pushes the tobacco and pushes the 1 substrate, the position of the first substrate is adsorbed and held, and the horizontal direction of the private substrate can be arbitrarily moved in the vertical direction. In the joining device of the item i, in the basin, the front end portion on the first substrate side of the moving member is ===. In the bonding apparatus of the first aspect of the 曱π patent target, in the first aspect, the guiding member is provided plurally with respect to the first substrate. The joint device of the first aspect of the invention, wherein the outer peripheral portion of the seventh second holding member is superimposed with respect to the first substrate, the second substrate, or the first embodiment of the tearing joint. The substrate 5, as in the joint device of the scope of the patent application, further comprising: a horizontal moving stage, the S1 holding member or the fresh 2 lining member is oppositely photographing the member, which photographs the surface of the second substrate; a photographing member that photographs a surface of the second substrate; and a distal movement mechanism that adjusts a position of the second holding member and the second holding member at a horizontal position so as to be a first reference in the image captured by the first imaging member And a bonding device of the second substrate of the image of the second substrate in the image captured by the second imaging member, wherein the bonding device further includes: a position adjustment mechanism that adjusts the ith substrate or the a horizontal inversion mechanism of the substrate, which reverses the surface and the back surface of the first substrate, and a transport mechanism that transports the second substrate, the second substrate, or the 32 201248764 first substrate and the second substrate in the bonding device Bonded laminated substrates. Seven types of bonding systems including bonding devices for bonding substrates, including: processing stations that include the bonding devices; and loading and unloading stations that can carry a plurality of substrates, a second substrate, or a US plate = 2 substrate The bonded superposed substrate is separated and can be moved to the processing station. The bonding device includes: a first holding member that adsorbs and holds the first substrate on the bottom surface. Provided in the lower surface of the first holding member, the top holding member pusher is provided on the first holding member, and presses the one of the first substrates and holds the first substrate. The first substrate is fixed in the horizontal direction at the white 0 position and can be arbitrarily moved in the vertical direction. The processing station includes: a surface activation device that bonds the first substrate or the second substrate to the surface active substrate === The surface activity is followed by activation of the third layer: the surface of the ^f 2 1 '8, as in the scope of the application of the seventh item of the junction device, the nitrogen is electrically polymerized, the base plate or the second substrate contains 9 a first joining method, the joining device member, which is disposed at The i-th substrate; the second holding plate; the pushing member disposed on the second surface of the substrate and holding the second substrate member The water of the first substrate is bonded and arbitrarily moved in the vertical direction. After the holding, the first holding member is stopped from adsorbing the first substrate, and the first i-plate = Γ 2 ΪΪ) if ' The center portion of one substrate lowers the f1 substrate, and further presses the center portions of the first and second substrates to abut each other; and the adjacent 51: two-steps are followed by the center portion of the first substrate and The bonding method of the ninth substrate of the second substrate, wherein the guiding member is provided on the second substrate_front end portion of the sturdy age. 11. The bonding method according to claim 9 of the patent application, The guiding member is provided in plural with respect to the first substrate. 12: The bonding method according to claim 9 of the patent application, wherein the surface of the first substrate and the second substrate of the lion are taken before the step of arranging With #5 weeks, the horizontal direction of the first substrate and the second substrate The relative position of the reference point w as the first substrate and the second post of a photographic image of the substrate induced by secret registration points taken together.