TWI715296B - Joining device and joining method - Google Patents

Joining device and joining method Download PDF

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TWI715296B
TWI715296B TW108142154A TW108142154A TWI715296B TW I715296 B TWI715296 B TW I715296B TW 108142154 A TW108142154 A TW 108142154A TW 108142154 A TW108142154 A TW 108142154A TW I715296 B TWI715296 B TW I715296B
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bonding
substrate
plasma
wafer
area
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TW108142154A
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TW202025420A (en
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金度延
李忠現
李恒林
金旼永
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南韓商細美事有限公司
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Abstract

本發明揭露一種能夠在沒有利用包含如接合膜和焊料凸點那樣的接合介質的情況下將晶片等的接合對象接合到基板上的接合裝置及接合方法。本發明的實施例所涉及的接合方法包括以下步驟：對待接合接合對象的基板上的接合區域和待接合到基板上的接合對象的接合面進行親水化；以及藉由接合對象的經親水化的接合面與基板的經親水化的接合區域之間的接合力而將接合對象預接合到基板上。在進行親水化的步驟中，藉由電漿裝置在接合面或接合區域形成電漿區域，同時藉由液滴噴霧裝置向電漿區域噴射液滴而對接合面或接合區域進行親水化。The present invention discloses a bonding device and a bonding method capable of bonding a bonding target such as a wafer to a substrate without using a bonding medium including a bonding film and solder bumps. The bonding method according to the embodiment of the present invention includes the following steps: hydrophilizing the bonding area on the substrate of the bonding target to be bonded and the bonding surface of the bonding target to be bonded to the substrate; and by hydrophilizing the bonding target The bonding force between the bonding surface and the hydrophilized bonding area of the substrate pre-bonds the bonding object to the substrate. In the step of hydrophilizing, a plasma area is formed on the bonding surface or the bonding area by a plasma device, and the bonding surface or the bonding area is hydrophilized by spraying droplets to the plasma area by the droplet spraying device.

Description

接合裝置及接合方法Joining device and joining method

本發明關於一種接合(bond，亦為鍵合)裝置及接合方法，更詳細而言，能夠在沒有利用包含接合膜(adhesion film)和焊料凸點(solder bump)的接合介質的情況下將晶片(die)等的接合對象接合到基板上的接合裝置及接合方法。The present invention relates to a bonding (bond, also known as bonding) device and bonding method. In more detail, it is possible to bond a chip without using a bonding medium including an adhesion film and solder bumps. A bonding device and a bonding method in which a bonding target such as a die is bonded to a substrate.

近年來，隨著半導體元件的集成度達到極限，將半導體元件層壓成三維的3D封裝技術受到矚目。代表性地，正在研究利用矽通孔技術(TSV；Through Silicon Via)將三維積體電路商業化的技術。能夠藉由層壓並接合TSV晶片的晶片接合工藝來製造三維半導體。In recent years, as the degree of integration of semiconductor elements has reached its limit, a 3D packaging technology that laminates semiconductor elements into three dimensions has attracted attention. Typically, research is underway to commercialize three-dimensional integrated circuits using through silicon via technology (TSV; Through Silicon Via). A three-dimensional semiconductor can be manufactured by a wafer bonding process of laminating and bonding TSV wafers.

圖1至圖3是表示先前技術的晶片接合工藝的圖。參照圖1，為了將TSV晶片3接合到主晶片(master wafer)1上，在TSV晶片3a的下部接合面上設置有作為接合介質的接合膜3b和焊料凸點3c。設置有接合膜3b和焊料凸點3c的TSV晶片3在由接合頭部4傳送到主晶片1的上部並在接合位置對齊後，放置在主晶片1的上表面或接合到主晶片1上的TSV晶片2的上表面上。1 to 3 are diagrams showing the wafer bonding process of the prior art. 1, in order to bond the TSV wafer 3 to the master wafer 1, a bonding film 3 b as a bonding medium and solder bumps 3 c are provided on the lower bonding surface of the TSV wafer 3 a. The TSV wafer 3 provided with the bonding film 3b and the solder bumps 3c is transferred to the upper part of the main chip 1 by the bonding head 4 and aligned at the bonding position, and then placed on the upper surface of the main chip 1 or bonded to the main chip 1. TSV wafer 2 on the upper surface.

TSV晶片3的接合工藝包括預接合工藝(pre bonding)和後接合工藝(post bonding)。參照圖2，藉由利用接合頭部4將TSV晶片3在主晶片1上加壓及升溫的預接合工藝，TSV晶片3初步接合到主晶片1上。為了進行TSV晶片3的預接合，接合頭部4具備用於將TSV晶片3在主晶片1上加壓及升溫的機構。在TSV晶片3預接合到主晶片1上的情況下，執行對TSV晶片3進行高溫熱處理並加壓而使接合膜3b和焊料凸點3c硬化的後接合工藝，藉由以接合膜3b和焊料凸點3c為介質的熱壓而TSV晶片3完全接合到主晶片1上。The bonding process of the TSV chip 3 includes a pre bonding process and a post bonding process. Referring to FIG. 2, the TSV wafer 3 is preliminarily bonded to the main wafer 1 through a pre-bonding process in which the TSV wafer 3 is pressurized and heated up on the main wafer 1 using the bonding head 4. In order to perform the pre-bonding of the TSV wafer 3, the bonding head 4 is provided with a mechanism for pressurizing and heating the TSV wafer 3 on the main wafer 1. When the TSV wafer 3 is pre-bonded to the main wafer 1, a post-bonding process is performed in which the TSV wafer 3 is subjected to high-temperature heat treatment and pressurized to harden the bonding film 3b and the solder bumps 3c, by using the bonding film 3b and solder The bumps 3c are hot pressing of the medium and the TSV wafer 3 is completely bonded to the main wafer 1.

參照圖3，TSV晶片2、3、4逐個依次經由層壓、預接合及後接合過程而逐個接合到主晶片1上。現有的晶片接合方法在逐個接合晶片時需要經過利用接合頭部4來加壓及加熱晶片並藉由高溫熱處理使晶片熱熔接的後接合工藝。因此，後接合工藝所需的時間與接合到主晶片1的晶片的個數成比例地增加。3, the TSV wafers 2, 3, and 4 are bonded to the main wafer 1 one by one through lamination, pre-bonding and post-bonding processes one by one. The existing chip bonding method requires a post bonding process in which the bonding head 4 is used to pressurize and heat the chip and heat the chip by high temperature heat treatment when bonding the chips one by one. Therefore, the time required for the post-bonding process increases in proportion to the number of wafers bonded to the master wafer 1.

此外，如果為了在作為TSV之間的間隔的I/O間距(pitch)逐漸微細化的同時使層壓的TSV晶片完全接合，進行高溫/高負荷接合，則有可能會發生焊料凸點擺動(sweep)並與周邊的焊料凸點連接而引起短路的不良情況。由此，難以使用接合介質。為了防止該不良情況，需要將焊料凸點的大小製作為逐漸減小，但這因存在物理局限而不可能成為完善的應對方案。此外，對於現有的晶片接合方法來說，主晶片和TSV晶片越是薄膜化，在高溫/高負荷的後接合工藝中TSV晶片和主晶片越有可能發生裂紋等損傷。In addition, if the laminated TSV wafer is fully bonded while the I/O pitch, which is the interval between TSVs, is gradually reduced, high temperature/high load bonding is performed, solder bump wobble may occur ( Sweep) and connect with the surrounding solder bumps to cause short circuits. Therefore, it is difficult to use the bonding medium. In order to prevent this problem, the size of the solder bumps needs to be gradually reduced, but this cannot be a perfect solution due to physical limitations. In addition, with the existing wafer bonding method, the thinner the main wafer and TSV wafer are, the more likely the TSV wafer and the main wafer are damaged during the high-temperature/high-load post-bonding process.

[發明所欲解決之問題][The problem to be solved by the invention]

本發明用於提供一種在沒有利用如接合膜和焊料凸點的接合介質的情況下能夠將晶片等的接合對象接合到基板上的接合裝置及接合方法。The present invention is to provide a bonding device and a bonding method capable of bonding a bonding target such as a wafer to a substrate without using bonding media such as bonding films and solder bumps.

此外，本發明用於提供一種能夠藉由同時產生電漿和微細液滴以有效地親水化處理基板和/或接合對象而將接合對象接合到基板上的接合裝置及接合方法。In addition, the present invention is intended to provide a bonding device and a bonding method capable of bonding a bonding object to a substrate by simultaneously generating plasma and fine droplets to effectively hydrophilize the substrate and/or bonding object.

此外，本發明用於提供一種能夠縮短基板與接合對象之間的預接合及後接合所需的工藝時間的接合裝置及接合方法。In addition, the present invention is used to provide a bonding device and a bonding method that can shorten the process time required for pre-bonding and post-bonding between a substrate and a bonding target.

[用以解決問題之技術手段][Technical means to solve the problem]

本發明的一方面所涉及的接合方法用於將接合對象接合到基板上，包括以下步驟：對待接合所述接合對象的所述基板上的接合區域和待接合到所述基板上的所述接合對象的接合面進行親水化；以及藉由所述接合對象的經親水化的接合面與所述基板的經親水化的接合區域之間的接合力而將所述接合對象預接合到所述基板上。在進行親水化的步驟中，藉由電漿裝置在所述接合面或所述接合區域形成電漿區域，同時藉由液滴噴霧裝置向所述電漿區域噴射液滴而對所述接合面或所述接合區域進行親水化。An aspect of the present invention relates to a bonding method for bonding a bonding target to a substrate, and includes the following steps: a bonding area on the substrate to be bonded to the bonding target and the bonding to be bonded to the substrate The bonding surface of the object is hydrophilized; and the bonding object is pre-bonded to the substrate by the bonding force between the hydrophilized bonding surface of the bonding object and the hydrophilized bonding area of the substrate on. In the step of hydrophilizing, a plasma area is formed on the bonding surface or the bonding area by a plasma device, and at the same time, a droplet spray device is used to spray droplets on the plasma area to hit the bonding surface. Or the junction area is hydrophilized.

在進行親水化的步驟中，所述液滴噴霧裝置可以藉由超音波液滴噴霧器向所述電漿區域噴射微細液滴。In the step of hydrophilizing, the droplet spraying device can spray fine droplets to the plasma region by an ultrasonic droplet sprayer.

在進行親水化的步驟中，所述液滴噴霧裝置可以向所述電漿裝置與所述基板之間的空間或所述電漿裝置與所述接合對象之間的空間噴射所述液滴。In the step of hydrophilizing, the droplet spraying device may spray the droplets into the space between the plasma device and the substrate or the space between the plasma device and the bonding object.

在進行親水化的步驟中，所述液滴噴霧裝置可以向與所述基板的接合區域或所述接合對象的接合面並排的方向噴射所述液滴。In the step of hydrophilizing, the droplet spraying device may spray the droplets in a direction parallel to the bonding area of the substrate or the bonding surface of the bonding target.

在進行親水化的步驟中，所述液滴噴霧裝置可以藉由對純水施加超音波而生成微細液滴，並且將所述微細液滴噴射到所述電漿區域而從所述微細液滴中生成OH自由基，並且在所述基板上的接合區域或所述接合對象的接合面形成用於預接合所述基板和所述接合對象的液膜。In the step of hydrophilization, the droplet spraying device may generate fine droplets by applying ultrasonic waves to pure water, and spray the fine droplets to the plasma region to remove the fine droplets from OH radicals are generated in the substrate, and a liquid film for pre-bonding the substrate and the bonding target is formed on the bonding area on the substrate or the bonding surface of the bonding target.

本發明的實施例所涉及的接合方法可進一步包括以下步驟：藉由接合頭部拾取支撐在支撐單元上的所述接合對象並將所述接合對象傳送到支撐在接合台上的所述基板的上部區域。進行親水化的步驟可以包括以下步驟：藉由所述電漿裝置在所述支撐單元與所述接合台之間的所述接合對象的傳送路徑上形成所述電漿區域；藉由所述液滴噴霧裝置向所述電漿區域噴射微細液滴；以及在使所述接合對象在噴射有所述微細液滴的所述電漿區域中移動的同時對所述接合對象的接合面進行親水化。The bonding method according to the embodiment of the present invention may further include the step of picking up the bonding object supported on the supporting unit by the bonding head and transferring the bonding object to the substrate supported on the bonding table. Upper area. The step of hydrophilizing may include the following steps: forming the plasma region on the transfer path of the bonding object between the support unit and the bonding stage by the plasma device; A droplet spray device sprays fine droplets to the plasma region; and hydrophilizes the bonding surface of the bonding target while moving the bonding target in the plasma region where the fine droplets are sprayed .

進行親水化的步驟可以包括以下步驟：藉由第一親水化處理部在所述基板上的接合區域形成電漿區域的同時噴射微細液滴而對所述基板上的接合區域進行親水化；以及藉由第二親水化處理部在所述接合對象的接合面形成電漿區域的同時噴射微細液滴而對所述接合對象的接合面進行親水化。The step of hydrophilizing may include the following steps: the first hydrophilizing treatment part forms a plasma area on the bonding area on the substrate while spraying fine droplets to hydrophilize the bonding area on the substrate; and The second hydrophilization treatment section sprays fine droplets while forming a plasma region on the joining surface of the joining object to hydrophilize the joining surface of the joining object.

進行親水化的步驟可以包括以下步驟：藉由包括所述電漿裝置和所述液滴噴霧裝置的親水化處理部在所述基板上的接合區域形成電漿區域的同時噴射微細液滴而對所述基板上的接合區域進行親水化；以及在對所述基板上的接合區域進行親水化之前或之後，藉由所述親水化處理部在所述接合對象的接合面形成電漿區域的同時噴射微細液滴而對所述接合對象的接合面進行親水化。The step of performing hydrophilization may include the following steps: by spraying fine droplets while forming a plasma area on the bonding area on the substrate by the hydrophilization treatment part including the plasma device and the droplet spraying device Hydrophilizing the bonding area on the substrate; and before or after hydrophilizing the bonding area on the substrate, the hydrophilization treatment portion forms a plasma area on the bonding surface of the bonding object while simultaneously Fine droplets are sprayed to hydrophilize the bonding surface of the bonding target.

在進行親水化的步驟中，可以藉由向利用介質阻擋放電方式形成的所述電漿區域供給微細液滴而在所述基板的接合區域或所述晶片的接合面上生成液體電漿。In the hydrophilization step, liquid plasma can be generated on the bonding region of the substrate or the bonding surface of the wafer by supplying fine droplets to the plasma region formed by the dielectric barrier discharge method.

本發明的實施例所涉及的接合方法可進一步包括以下步驟：在所述基板和所述接合對象預接合的狀態下進行熱處理以將所述接合對象後接合到所述基板上。The bonding method according to the embodiment of the present invention may further include the step of performing heat treatment in a state where the substrate and the bonding target are pre-bonded to later bond the bonding target to the substrate.

本發明的另一方面所涉及的接合裝置用於將接合對象接合到基板上，包括：接合頭部，其用於拾取所述接合對象並將所述接合對象傳送到所述基板上的接合區域；以及親水化處理部，其用於對所述基板上的接合區域及所述接合對象的接合面進行親水化，從而將所述接合對象預接合到所述基板上。所述親水化處理部包括：電漿裝置，其用於在所述接合對象的接合面或所述基板上的接合區域形成電漿區域；以及液滴噴霧裝置，其用於向所述電漿區域噴射液滴。Another aspect of the present invention relates to a bonding device for bonding a bonding object to a substrate, and includes a bonding head for picking up the bonding object and transferring the bonding object to the bonding area on the substrate And a hydrophilization treatment part for hydrophilizing the bonding area on the substrate and the bonding surface of the bonding object, thereby pre-bonding the bonding object to the substrate. The hydrophilization treatment unit includes: a plasma device for forming a plasma region on the bonding surface of the bonding object or a bonding region on the substrate; and a droplet spray device for spraying the plasma The area sprays droplets.

所述液滴噴霧裝置可以包括超音波液滴噴霧器，所述超音波液滴噴霧器用於向所述電漿區域噴射微細液滴。The droplet spraying device may include an ultrasonic droplet sprayer for spraying fine droplets to the plasma region.

所述液滴噴霧裝置可以向所述電漿裝置與所述基板之間的空間或所述電漿裝置與所述接合對象之間的空間噴射所述液滴，並且向與所述基板的接合區域或所述接合對象的接合面並排的方向噴射所述液滴。The droplet spraying device may spray the droplets to the space between the plasma device and the substrate or the space between the plasma device and the bonding object, and to the bonding with the substrate The droplets are ejected in a direction in which the areas or the joining surfaces of the joining objects are side by side.

所述液滴噴霧裝置可以藉由對純水施加超音波而生成微細液滴，並且將所述微細液滴噴射到所述電漿區域而從所述微細液滴中生成OH自由基，並且在所述基板上的接合區域或所述接合對象的接合面形成用於預接合所述基板和所述接合對象的液膜。The droplet spraying device can generate fine droplets by applying ultrasonic waves to pure water, and spray the fine droplets to the plasma region to generate OH radicals from the fine droplets, and The bonding area on the substrate or the bonding surface of the bonding target forms a liquid film for pre-bonding the substrate and the bonding target.

所述接合頭部可以被設置為在支撐所述接合對象的支撐單元與支撐所述基板的接合台之間能夠移動。所述親水化處理部可以設置在所述支撐單元與所述接合台之間的所述接合對象的傳送路徑上。The bonding head may be provided to be movable between a supporting unit supporting the bonding object and a bonding table supporting the substrate. The hydrophilization treatment part may be provided on a conveying path of the joining object between the support unit and the joining table.

所述親水化處理部可包括：第一親水化處理部，其藉由在所述基板上的接合區域形成電漿區域的同時噴射微細液滴而對所述基板上的接合區域進行親水化；以及第二親水化處理部，其藉由在所述接合對象的接合面形成電漿區域的同時噴射微細液滴而對所述接合對象的接合面進行親水化。The hydrophilization treatment part may include: a first hydrophilization treatment part that hydrophilizes the joint area on the substrate by spraying fine droplets while forming a plasma area on the joint area on the substrate; And a second hydrophilization treatment part for hydrophilizing the joining surface of the joining object by spraying fine droplets while forming a plasma region on the joining surface of the joining object.

所述親水化處理部可以被構造為對所述基板上的接合區域及所述接合對象的接合面連續進行親水化。The hydrophilization treatment part may be configured to continuously hydrophilize the bonding area on the substrate and the bonding surface of the bonding target.

所述電漿裝置可包括：電漿尖端，其用於向所述基板上的接合區域局部地供給電漿；驅動部，其用於使所述電漿尖端沿水平方向及上下方向移動；以及旋轉部，其用於使所述電漿尖端沿上下方向旋轉。The plasma apparatus may include: a plasma tip for locally supplying plasma to the bonding area on the substrate; a driving part for moving the plasma tip in a horizontal direction and an up-down direction; and The rotating part is used to rotate the plasma tip in the up-down direction.

所述親水化處理部可以利用介質阻擋放電方式形成所述電漿區域並向所述電漿區域供給微細液滴而在所述基板的接合區域或所述晶片的接合面上生成液體電漿。The hydrophilization treatment part may form the plasma region by a dielectric barrier discharge method and supply fine droplets to the plasma region to generate liquid plasma on the bonding region of the substrate or the bonding surface of the wafer.

本發明的實施例所涉及的接合裝置可進一步包括：熱處理單元，其在所述基板和所述接合對象預接合的狀態下進行熱處理以將所述接合對象後接合到所述基板上。The bonding apparatus according to the embodiment of the present invention may further include a heat treatment unit that performs heat treatment in a state where the substrate and the bonding target are pre-bonded to later bond the bonding target to the substrate.

[發明功效][Invention Effect]

根據本發明的實施例，在沒有利用如接合膜和焊料凸點那樣的接合介質的情況下能夠將晶片等的接合對象接合到基板上。According to the embodiments of the present invention, a bonding target such as a wafer can be bonded to a substrate without using a bonding medium such as a bonding film and solder bumps.

此外，本發明能夠藉由同時產生電漿和微細液滴以有效地親水化處理基板和/或接合對象而將接合對象接合到基板上，並且能夠縮短基板與接合對象之間的預接合及後接合所需的工藝時間。In addition, the present invention can bond the bonding object to the substrate by simultaneously generating plasma and fine droplets to effectively hydrophilize the substrate and/or the bonding object, and can shorten the pre-bonding and post-bonding between the substrate and the bonding object. Process time required for bonding.

本發明的效果並不限定於上述效果。本發明所屬技術領域的普通技術人員能夠從本說明書及圖式中明確理解本發明沒有涉及到的效果。The effects of the present invention are not limited to the above effects. A person of ordinary skill in the technical field to which the present invention belongs can clearly understand the effects not involved in the present invention from the description and the drawings.

下面，參照圖式對本發明的實施例進行更詳細說明。本發明的實施例可變形為多種方式，應解釋為本發明的範圍並非由以下實施例限定。本實施例是為了向本領域技術人員更完整地說明本發明而提供的。因此，為了強調更明確的說明，誇大圖式中的要素的形狀。Hereinafter, embodiments of the present invention will be described in more detail with reference to the drawings. The embodiments of the present invention can be modified into various ways, and it should be construed that the scope of the present invention is not limited by the following embodiments. This embodiment is provided to explain the present invention more completely to those skilled in the art. Therefore, in order to emphasize a clearer description, the shape of the elements in the scheme is exaggerated.

本發明的實施例所涉及的接合方法用於將晶片等的接合對象接合到基板上，包括以下步驟：對基板上的接合區域和待接合到基板上的接合對象的接合面進行親水化；藉由接合對象的經親水化的接合面與基板的經親水化的接合區域之間的接合力而將接合對象預接合到基板上；以及在接合對象預接合在基板上的狀態下進行熱處理以將接合對象後接合到基板上。在本發明的實施例中，親水化處理部在接合對象的接合面和/或基板上的接合區域形成電漿區域的同時，向電漿區域噴射液滴而使其親水化。The bonding method involved in the embodiment of the present invention is used for bonding a bonding target such as a wafer to a substrate, and includes the following steps: hydrophilizing the bonding area on the substrate and the bonding surface of the bonding target to be bonded to the substrate; The bonding object is pre-bonded to the substrate by the bonding force between the hydrophilized bonding surface of the bonding object and the hydrophilized bonding area of the substrate; and the heat treatment is performed in a state in which the bonding object is pre-bonded on the substrate After joining the object, it is joined to the substrate. In the embodiment of the present invention, the hydrophilization treatment section forms a plasma region on the bonding surface of the bonding target and/or the bonding region on the substrate, and simultaneously sprays droplets on the plasma region to make it hydrophilized.

根據本發明的實施例，在沒有利用如接合膜和焊料凸點等的接合媒介的情況下，能夠接合基板與晶片(例如，TSV晶片)或基板之間。因此，在製作微細I/O間距的半導體時，能夠防止焊料凸點的擺動或短路等的不良。此外，在接合晶片時，不經過後接合工藝，而是能夠按基板單位執行後接合工藝，從而能夠縮減接合工藝所需時間。此外，根據本發明的實施例，在基板和/或接合對象的親水化處理時，能夠藉由同時生成電漿和微細液滴而在微細液滴的表面上發生親水基團以增加親水性，並且提高基板與接合對象之間的預接合力。According to the embodiments of the present invention, it is possible to bond a substrate and a wafer (for example, a TSV wafer) or between a substrate without using a bonding medium such as a bonding film and solder bumps. Therefore, when manufacturing a semiconductor with a fine I/O pitch, it is possible to prevent defects such as wobble or short circuit of the solder bump. In addition, when the wafers are bonded, the post-bonding process is not passed through, but the post-bonding process can be performed per substrate unit, so that the time required for the bonding process can be reduced. In addition, according to the embodiment of the present invention, during the hydrophilization treatment of the substrate and/or the bonding object, it is possible to generate hydrophilic groups on the surface of the fine droplets by generating plasma and fine droplets at the same time to increase the hydrophilicity, And improve the pre-bonding force between the substrate and the bonding object.

下面，以在基板(例如，半導體基板或玻璃基板等)上接合晶片(例如，半導體晶片等)的晶片接合方法及晶片接合裝置為例，對本發明的實施例所涉及的接合方法及接合裝置進行說明，但事先聲明本發明的接合裝置及接合方法並不限於在基板(第一基板)上接合晶片的情況，還可以包括接合基板(第一基板和第二基板)的情況。Hereinafter, taking a wafer bonding method and a wafer bonding apparatus for bonding a wafer (e.g., a semiconductor wafer, etc.) on a substrate (e.g., a semiconductor substrate or a glass substrate, etc.) as an example, the bonding method and the bonding apparatus according to the embodiment of the present invention will be described. It is explained, but it is stated in advance that the bonding apparatus and bonding method of the present invention are not limited to the case of bonding the wafer on the substrate (first substrate), and may also include the case of bonding the substrates (first substrate and second substrate).

在本發明的說明書中，將接合對象接合到“基板上”的情況不僅包括將接合對象直接接合到基板的上表面上的情況，還包括將其他接合對象接合到預接合於基板的接合對象的上表面上的情況，或者將新的接合對象接合到經多層層壓而預接合到基板的接合對象中的層壓到最上層部的接合對象的上表面上的情況。In the specification of the present invention, the case of bonding the bonding target to the "substrate" not only includes the case where the bonding target is directly bonded to the upper surface of the substrate, but also includes bonding other bonding targets to the bonding target pre-bonded to the substrate. In the case of the upper surface, or the case of bonding a new bonding target to the upper surface of the bonding target laminated to the uppermost layer among the bonding targets pre-bonded to the substrate through multilayer lamination.

圖4是表示本發明的實施例所涉及的晶片接合方法的流程圖。參照圖4進行說明，則首先執行對基板和晶片(接合對象)分別進行電漿處理並使其親水化的步驟(步驟S10、步驟S20)。即，對待接合晶片的基板上的接合區域進行電漿處理並使其親水化(步驟S10)，並且對待接合到基板上的接合區域中的晶片的接合面進行電漿處理並使其親水化(步驟S20)。此時，同時發生電漿和微細液滴並進行基板和晶片的親水化處理。即，藉由利用一個或多個電漿裝置在基板及晶片形成電漿區域的同時，向電漿區域噴射微細液滴，從而增加基板及晶片的親水性。4 is a flowchart showing the wafer bonding method according to the embodiment of the present invention. Describing with reference to FIG. 4, first, the steps of performing plasma treatment on the substrate and the wafer (bonding target) and making them hydrophilic (step S10 and step S20) are performed. That is, the bonding area on the substrate of the wafer to be bonded is subjected to plasma treatment and hydrophilization (step S10), and the bonding surface of the wafer in the bonding area to be bonded to the substrate is subjected to plasma treatment and hydrophilized ( Step S20). At this time, plasma and fine droplets are simultaneously generated and the substrate and wafer are hydrophilized. That is, by using one or more plasma devices to form the plasma region on the substrate and the wafer, fine droplets are sprayed on the plasma region, thereby increasing the hydrophilicity of the substrate and the wafer.

在本發明的實施例中，在利用接合頭部(bonding head)從支撐單元向用於支撐基板的接合台(bonding stage)側傳送晶片的過程中能夠執行關於晶片的親水化處理。在完成將製作於支撐單元上支撐的半導體晶片上的晶片分離的切割(dicing)工藝的情況下，藉由接合頭部來依次拾取晶片並向支撐有基板(主晶片)的接合台側傳送。此時，在利用接合頭部朝向接合台移動晶片的過程中執行關於晶片的親水化處理，從而能夠在沒有待機時間的情況下進行晶片的親水化。作為另一實施例，也可以向其他親水化處理腔室傳送晶片並藉由電漿及微細液滴進行親水化處理。In the embodiment of the present invention, the hydrophilization process with respect to the wafer can be performed in the process of transferring the wafer from the support unit to the bonding stage side for supporting the substrate using a bonding head. When the dicing process for separating the wafers produced on the semiconductor wafer supported on the support unit is completed, the wafers are sequentially picked up by the bonding head and transferred to the bonding stage side supporting the substrate (main wafer). At this time, the hydrophilization of the wafer is performed in the process of moving the wafer toward the bonding stage using the bonding head, so that the hydrophilization of the wafer can be performed without waiting time. As another example, it is also possible to transfer the wafer to other hydrophilization processing chambers and perform hydrophilization treatment by plasma and fine droplets.

也可以在接合台上支撐有基板的狀態下執行對基板的親水化處理，也可以在其他親水化處理腔室中進行親水化處理之後，藉由基板運送裝置將基板移動到接合台。也可以藉由多個親水化處理部同時並存執行基板電漿處理和晶片親水化處理，還可以藉由一個親水化處理部依次執行基板電漿處理和晶片親水化處理。The hydrophilization treatment of the substrate may be performed with the substrate supported on the bonding stage, or the substrate may be moved to the bonding stage by a substrate transport device after the hydrophilization treatment is performed in another hydrophilization processing chamber. It is also possible to concurrently perform substrate plasma treatment and wafer hydrophilization treatment by the simultaneous coexistence of a plurality of hydrophilization treatment units, and it is also possible to sequentially perform substrate plasma treatment and wafer hydrophilization treatment by one hydrophilization treatment unit.

也可以藉由真空(低壓)或大氣壓(常壓)電漿裝置和液滴噴霧裝置來執行基板和/或晶片的親水化處理。基板和/或晶片也可以藉由單一電漿處理來得實現親水化，還可以藉由在反應性離子蝕刻(Reactive Ion Etching)電漿處理之後進行表面活性化(Surface Activation)電漿處理的依次電漿處理來實現親水化。也可以藉由利用電漿及微細液滴的親水化處理，在基板上的接合區域和/或晶片的接合面形成薄的液膜。The hydrophilization treatment of the substrate and/or wafer can also be performed by a vacuum (low pressure) or atmospheric pressure (normal pressure) plasma device and a droplet spray device. The substrate and/or wafer can also be hydrophilized by a single plasma treatment, or by sequential electro-plasma treatment after reactive ion etching (Reactive Ion Etching) plasma treatment and surface activation (Surface Activation) plasma treatment. Pulp treatment to achieve hydrophilization. It is also possible to form a thin liquid film on the bonding area on the substrate and/or the bonding surface of the wafer by the hydrophilization treatment using plasma and fine droplets.

在基板及晶片的電漿處理之後，也可以根據需要對經親水化處理的基板和/或晶片進一步執行沖洗處理。即，藉由利用浸濕裝置(未圖示)向基板上的經親水化的接合區域和/或晶片的經親水化的接合面噴射包含水的液體，從而經由親水化處理在生成於基板和/或晶片的液膜上進一步形成水膜，能夠進一步增加晶片的預接合力。為了形成水膜而向基板或晶片供給的液體例如可以是純水(DIW；去離子水)。在根據基板與晶片的接合介面物質(半導體、金屬或玻璃等)、電漿處理類型或後接合工藝方法等，只利用同時發生電漿及微細液滴的親水化處理能夠得到充分的預接合力的情況下，也可以省略附加的沖洗處理。After the plasma treatment of the substrate and the wafer, the hydrophilized substrate and/or the wafer may be further rinsed as needed. That is, by using a soaking device (not shown) to spray a liquid containing water on the hydrophilized bonding area on the substrate and/or the hydrophilized bonding surface of the wafer, the hydrophilization process is performed on the substrate and /Or a water film is further formed on the liquid film of the wafer, which can further increase the pre-bonding force of the wafer. The liquid supplied to the substrate or wafer for forming a water film may be pure water (DIW; deionized water), for example. Depending on the bonding interface material (semiconductor, metal, glass, etc.) of the substrate and the wafer, the type of plasma treatment, or post-bonding process method, etc., sufficient pre-bonding force can be obtained only by the hydrophilization process that simultaneously generates plasma and fine droplets In the case, the additional flushing treatment can also be omitted.

在基板及晶片的親水化處理之後，用於拾取晶片的接合頭部朝向接合台的上部區域移動，然後以晶片的接合面與基板上的接合區域接觸的方式下降晶片。在晶片的接合面與基板上的接合區域接觸的情況下，即便不加壓或升溫晶片，也藉由基板的經親水化的接合區域與晶片的經親水化的接合面之間的接合力(氫鍵合力)來在基板上預接合晶片(步驟S30)。也可以根據需要，以適當的壓力(例如，1～2bar)在基板上加壓晶片並進行加熱處理。After the hydrophilization of the substrate and the wafer, the bonding head for picking up the wafer moves toward the upper area of the bonding table, and then the wafer is lowered in such a manner that the bonding surface of the wafer contacts the bonding area on the substrate. When the bonding surface of the wafer is in contact with the bonding area on the substrate, even if the wafer is not pressurized or heated, the bonding force between the hydrophilized bonding area of the substrate and the hydrophilized bonding surface of the wafer ( Hydrogen bonding force) to pre-bond the wafer on the substrate (step S30). It is also possible to press the wafer on the substrate with an appropriate pressure (for example, 1 to 2 bar) and heat treatment as needed.

接合頭部再次返回到經切割的半導體晶片側並拾取後續接合的新的晶片，反復如上所述的過程。在基板上預接合晶片的情況下，對預接合有晶片的基板進行熱處理(annealing)並按基板單位同時後接合晶片(步驟S40)。用於後接合的熱處理也可以在支撐有基板的接合台上藉由熱處理單元來執行，還可以藉由設置於其他熱處理腔室的熱處理單元來執行。The bonding head returns to the side of the diced semiconductor wafer again and picks up a new wafer that is subsequently bonded, and the process described above is repeated. In the case of pre-bonding the wafer on the substrate, the substrate with the wafer pre-bonded is subjected to annealing (annealing), and the wafers are simultaneously post-bonded per substrate (step S40). The heat treatment for post-bonding may also be performed by a heat treatment unit on a bonding table supporting the substrate, or may be performed by a heat treatment unit installed in another heat treatment chamber.

圖5是示意性地表示本發明的實施例所涉及的晶片接合裝置的側視圖。圖6是示意性地表示本發明的實施例所涉及的晶片接合裝置的俯視圖。參照圖5及圖6，本發明的實施例所涉及的晶片接合裝置100包括支撐單元110、接合台120、接合頭部140、第一親水化處理部170、第二親水化處理部180及熱處理單元(未圖示)。Fig. 5 is a side view schematically showing the wafer bonding apparatus according to the embodiment of the present invention. Fig. 6 is a plan view schematically showing a wafer bonding apparatus according to an embodiment of the present invention. 5 and 6, the wafer bonding apparatus 100 according to the embodiment of the present invention includes a supporting unit 110, a bonding stage 120, a bonding head 140, a first hydrophilization treatment part 170, a second hydrophilization treatment part 180, and heat treatment Unit (not shown).

支撐單元110支撐切割成晶片的半導體晶片W。接合台120支撐基板MW。支撐單元110和接合台120可具備用於支撐半導體晶片W和基板MW的卡盤(chuck)(例如，靜電卡盤)。接合頭部140是為了拾取支撐在支撐單元110上的晶片並向基板MW上的接合區域傳輸而提供的。The supporting unit 110 supports the semiconductor wafer W cut into wafers. The bonding stage 120 supports the substrate MW. The supporting unit 110 and the bonding stage 120 may be provided with a chuck (for example, an electrostatic chuck) for supporting the semiconductor wafer W and the substrate MW. The bonding head 140 is provided for picking up the wafer supported on the supporting unit 110 and transferring it to the bonding area on the substrate MW.

接合頭部140可以沿傳送軌道132在支撐單元110的上部區域與接合台120的上部區域之間往復移動。傳送軌道132可設置於由支撐部134支撐的框架130上。以下，將從支撐單元110朝向接合台120的方向稱為第一方向X，將在與半導體晶片W及基板MW並排的平面上與第一方向X垂直的方向稱為第二方向Y，將與第一方向X及第二方向Y均垂直的上下方向稱為第三方向Z，進行說明。The bonding head 140 may reciprocate between the upper region of the support unit 110 and the upper region of the bonding table 120 along the conveying rail 132. The conveying rail 132 may be disposed on the frame 130 supported by the supporting part 134. Hereinafter, the direction from the support unit 110 to the bonding stage 120 is referred to as the first direction X, and the direction perpendicular to the first direction X on the plane side by side with the semiconductor wafer W and the substrate MW is referred to as the second direction Y. The vertical direction in which both the first direction X and the second direction Y are perpendicular is referred to as the third direction Z for description.

傳送軌道132沿第一方向X排列。接合頭部140可藉由能夠移動地接合到傳送軌道132的滑架142沿第一方向X移動。在框架130上形成有用於傳送接合頭部10的通道136。接合頭部140可由設置在形成於框架130的通道136兩側的一對傳送軌道132支撐並沿第一方向X穩定地移動。The transport track 132 is arranged along the first direction X. The engaging head 140 can be moved in the first direction X by the carriage 142 movably coupled to the conveying rail 132. A channel 136 for transferring the joint head 10 is formed on the frame 130. The engaging head 140 may be supported by a pair of conveying rails 132 provided on both sides of the channel 136 formed in the frame 130 and stably move in the first direction X.

可藉由安裝於滑架142的升降單元140a沿第三方向Z升降驅動接合頭部140。接合頭部140在下端部具備抵接板144。接合頭部140可以以真空抽吸等的方式在半導體晶片W上拾取晶片。在接合頭部140拾取晶片的情況下，設置於框架130的檢查部150對由接合頭部140拾取的晶片執行位置檢查。檢查部150可以基於視覺(vision)檢查晶片的位置。The engaging head 140 can be driven up and down in the third direction Z by the lifting unit 140 a installed on the carriage 142. The bonding head 140 includes an abutting plate 144 at the lower end. The bonding head 140 can pick up the wafer on the semiconductor wafer W by vacuum suction or the like. In the case where the bonding head 140 picks up a wafer, the inspection section 150 provided in the frame 130 performs position inspection on the wafer picked up by the bonding head 140. The inspection part 150 may inspect the position of the wafer based on vision.

設置於框架130的清洗單元160清洗由接合頭部140拾取的晶片的下表面(接合面)。清洗單元160可設置於支撐單元110與第一親水化處理部170之間。清洗單元160可以是合成有空氣噴射單元、真空抽吸單元及離子發生器(ionizer)的清洗裝置。為了提高工藝速度，清洗單元160在由接合頭部140拾取的晶片處於移動過程中的狀態下進行清洗處理。The cleaning unit 160 provided in the frame 130 cleans the lower surface (bonding surface) of the wafer picked up by the bonding head 140. The cleaning unit 160 may be disposed between the supporting unit 110 and the first hydrophilization treatment part 170. The cleaning unit 160 may be a cleaning device in which an air jet unit, a vacuum suction unit, and an ionizer are combined. In order to increase the process speed, the cleaning unit 160 performs cleaning processing in a state where the wafer picked up by the bonding head 140 is in the process of moving.

圖7是示意性地表示構造本發明的實施例所涉及的晶片接合裝置的支撐單元和第一親水化處理部及接合台的排列的俯視圖。圖8是示意性地表示構造本發明的實施例所涉及的晶片接合裝置的第一親水化處理部的立體圖。圖9是示意性地表示構造本發明的實施例所涉及的晶片接合裝置的大氣壓電漿裝置的剖視圖。FIG. 7 is a plan view schematically showing the arrangement of the support unit, the first hydrophilization treatment portion, and the bonding stage constituting the wafer bonding apparatus according to the embodiment of the present invention. FIG. 8 is a perspective view schematically showing a first hydrophilization treatment section configuring the wafer bonding device according to the embodiment of the present invention. FIG. 9 is a cross-sectional view schematically showing an atmospheric pressure piezoelectric slurry device that constructs the wafer bonding device according to the embodiment of the present invention.

參照圖7至圖9，第一親水化處理部170用於對晶片D的接合面進行親水化處理，包括電漿裝置170a和液滴噴霧裝置170b。電漿裝置170a可以在晶片D的傳送路徑DP上設置在支撐單元110與接合台120之間。電漿裝置170a用於對晶片D進行電漿處理並使其親水化，可對由接合頭部140傳送中的晶片D的接合面進行電漿處理並使其親水化。7 to 9, the first hydrophilization treatment part 170 is used to perform hydrophilization treatment on the bonding surface of the wafer D, and includes a plasma device 170a and a droplet spray device 170b. The plasma device 170a may be disposed between the support unit 110 and the bonding stage 120 on the transfer path DP of the wafer D. The plasma device 170a is used for plasma treatment and hydrophilization of the wafer D, and can perform plasma treatment and hydrophilization on the bonding surface of the wafer D being transported by the bonding head 140.

根據本實施例，在利用接合頭部140向接合台120傳送晶片D期間，可藉由以飛行類型(flying type)對晶片D的下表面(接合面)進行大氣壓電漿處理並使其親水化，並且無需為了使晶片D親水化而減慢晶片D的傳送速度，從而能夠縮短預接合工藝時間。在實施例中，電漿裝置170a可被提供為大氣壓(常壓)電漿裝置。電漿裝置170a也可以被提供為真空電漿裝置。According to this embodiment, during the transfer of the wafer D to the bonding stage 120 by the bonding head 140, the lower surface (bonding surface) of the wafer D can be treated with atmospheric pressure and hydrophilized by using a flying type. In addition, there is no need to slow down the transfer speed of the wafer D in order to make the wafer D hydrophilic, so that the pre-bonding process time can be shortened. In an embodiment, the plasma device 170a may be provided as an atmospheric pressure (normal pressure) plasma device. The plasma device 170a may also be provided as a vacuum plasma device.

電漿裝置170a在上部形成有包含親水基團的電漿區域P。電漿區域P可被形成為與晶片D的傳送路徑DP重疊。晶片D的接合面在向接合台120側傳送的期間可藉由由電漿裝置170a形成的親水基團來實現親水化。親水基團可包含氫或氫氧基團等。電漿裝置170a例如可被提供為大氣壓氧/氬電漿裝置、大氣壓水蒸氣電漿裝置、氮電漿裝置等。The plasma device 170a is formed with a plasma region P containing a hydrophilic group on the upper part. The plasma region P may be formed to overlap with the transfer path DP of the wafer D. The bonding surface of the wafer D can be hydrophilized by the hydrophilic group formed by the plasma device 170a during the transfer to the bonding stage 120 side. The hydrophilic group may include hydrogen or hydroxyl group or the like. The plasma device 170a may be provided as an atmospheric pressure oxygen/argon plasma device, an atmospheric pressure water vapor plasma device, a nitrogen plasma device, or the like, for example.

在實施例中，電漿裝置170a可被提供為藉由對具有介電率的管道壁面施加RF(Radio Frequency，射頻)和/或LF(Low Frequency，低頻)電源而發生電漿的介質阻擋放電(DBD；Dielectric Barrier Discharge)常溫電漿裝置。電漿裝置170a可包括：主體172；氣體供給部174，用於向主體172內導入工藝氣體；和RF電源施加部176，用於藉由激發工藝氣體而形成電漿。在主體172內形成有傳送通道172a，該傳送通道172a用於將由氣體供給部174供給的工藝氣體傳送到上部。由RF電源供給部176b供給的RF電源藉由RF電源施加部176施加到被絕緣體178絕緣的電極176a。In an embodiment, the plasma device 170a may be provided to generate a dielectric barrier discharge of the plasma by applying RF (Radio Frequency, radio frequency) and/or LF (Low Frequency) power to the wall of a pipe with a dielectric rate. (DBD; Dielectric Barrier Discharge) Plasma device at room temperature. The plasma device 170a may include: a main body 172; a gas supply part 174 for introducing process gas into the main body 172; and an RF power application part 176 for forming plasma by exciting the process gas. A transfer channel 172a is formed in the main body 172 for transferring the process gas supplied from the gas supply part 174 to the upper part. The RF power supplied from the RF power supply unit 176b is applied to the electrode 176a insulated by the insulator 178 by the RF power application unit 176.

在主體172的上部形成有開口172b，該開口172b用於在電漿區域P形成由RF電源激發的電漿氣體。為了在晶片D的第二方向Y上的總寬度在進行親水化處理，開口172b可被形成為具有與晶片D的第二方向Y上的寬度相同或大於該寬度的長度。電漿裝置170a可藉由感測部178a和控制部178b來控制工作狀態。An opening 172b is formed in the upper part of the main body 172, and the opening 172b is used to form the plasma gas excited by the RF power source in the plasma region P. In order to perform the hydrophilization treatment on the total width of the wafer D in the second direction Y, the opening 172b may be formed to have a length equal to or greater than the width of the wafer D in the second direction Y. The plasma device 170a can control the working state by the sensing part 178a and the control part 178b.

液滴噴霧裝置170b可設置在與電漿裝置170a相鄰的位置上。液滴噴霧裝置170b向由電漿裝置170a形成的電漿區域P噴射微細液滴。液滴噴霧裝置170b可包括向電漿區域P噴射微細液滴的超音波液滴噴霧器。超音波液滴噴霧器可包括：超音波液滴發生器171a，利用超音波發生微細液滴；和液滴噴霧噴嘴171b，用於將由超音波液滴發生器171a發生的微細液滴供給到電漿區域P。為了向電漿裝置170a和晶片D之間的數mm內的窄的空間噴射微細液滴，液滴噴霧噴嘴171b可被提供為直徑窄(小於幾mm)的長噴嘴管形態。液滴噴霧噴嘴171b可以以在晶片D沿第一方向X移動的過程中能夠毫無干涉地進行親水化處理的方式沿第二方向Y設置。The droplet spray device 170b may be disposed at a position adjacent to the plasma device 170a. The droplet spraying device 170b sprays fine droplets to the plasma region P formed by the plasma device 170a. The droplet spraying device 170b may include an ultrasonic droplet sprayer that sprays fine droplets to the plasma region P. The ultrasonic droplet sprayer may include: an ultrasonic droplet generator 171a for generating fine droplets using ultrasonic waves; and a droplet spray nozzle 171b for supplying the fine droplets generated by the ultrasonic droplet generator 171a to the plasma Area P. In order to spray fine droplets into a narrow space within a few mm between the plasma device 170a and the wafer D, the droplet spray nozzle 171b may be provided in the form of a long nozzle tube with a narrow diameter (less than a few mm). The droplet spray nozzle 171b may be arranged in the second direction Y in such a way that the hydrophilization process can be performed without interference during the movement of the wafer D in the first direction X.

圖10是表示構造本發明的實施例所涉及的晶片接合裝置的第一親水化處理部的操作及作用的圖。第一親水化處理部170在藉由電漿裝置170a在電漿裝置170a的噴嘴(電漿尖端)外部形成電漿區域P的同時，藉由液滴噴霧裝置170b向電漿區域P噴射純水等的微細液滴DR。微細液滴DR表面的水分子(H2 O)中的一部分在電漿區域P內被分解為OH自由基R。由微細液滴DR生成的OH自由基R與由電漿裝置170a發生的親水基團一同對晶片D的接合面進行親水化，由此與只進行電漿處理的情況相比能夠對晶片D的接合面有效地進行親水化。此外，藉由利用超音波噴霧器將純水製作成微細液滴DR並噴射，從而增加噴射的液滴的表面積並能夠生成更多量的OH自由基，並且微細液滴DR均勻地分佈在電漿區域P而提高OH自由基的均勻度。此外，由液滴噴霧裝置170b噴射的微細液滴DR在被親水基團親水化的晶片D的接合面上形成較薄的液膜，在預接合時進一步增加接合力。FIG. 10 is a diagram showing the operation and function of the first hydrophilization treatment section configuring the wafer bonding apparatus according to the embodiment of the present invention. The first hydrophilization treatment unit 170 forms the plasma region P outside the nozzle (plasma tip) of the plasma device 170a by the plasma device 170a, and sprays pure water to the plasma region P by the droplet spray device 170b. And other fine droplets DR. A part of the water molecules (H 2 O) on the surface of the fine droplet DR is decomposed into OH radicals R in the plasma region P. The OH radicals R generated by the fine droplets DR together with the hydrophilic groups generated by the plasma device 170a hydrophilize the bonding surface of the wafer D, thereby making it possible to treat the wafer D compared to the case where only the plasma treatment is performed. The joint surface is effectively hydrophilized. In addition, by using an ultrasonic sprayer to make pure water into fine droplets DR and spray them, the surface area of the sprayed droplets can be increased and more OH radicals can be generated, and the fine droplets DR are evenly distributed in the plasma Area P improves the uniformity of OH radicals. In addition, the fine droplets DR sprayed by the droplet spraying device 170b form a thinner liquid film on the bonding surface of the wafer D hydrophilized by the hydrophilic group to further increase the bonding force during pre-bonding.

圖11是用於說明構造本發明的實施例所涉及的晶片接合裝置的電漿裝置的操作的圖。參照圖7至圖11，感測部178a感測晶片D是否位於電漿裝置170a的電漿處理區間P2內。控制部178b在晶片D位於進入電漿處理區間P2之前的區間P1或經過電漿處理區間P2的區間P3的情況下終止電漿裝置170a的工作，在晶片D位於電漿處理區間P2的情況下能夠藉由使電漿裝置170a的RF電源供給部176b和氣體供給部174工作而生成電漿。FIG. 11 is a diagram for explaining the operation of the plasma apparatus constructing the wafer bonding apparatus according to the embodiment of the present invention. Referring to FIGS. 7 to 11, the sensing portion 178a senses whether the chip D is located in the plasma processing section P2 of the plasma device 170a. The control unit 178b terminates the operation of the plasma device 170a when the wafer D is located in the section P1 before entering the plasma processing section P2 or in the section P3 passing through the plasma processing section P2, and when the wafer D is located in the plasma processing section P2 Plasma can be generated by operating the RF power supply unit 176b and the gas supply unit 174 of the plasma device 170a.

在晶片D向電漿處理區間P2的電漿開始位置P21進入的情況下，能夠藉由控制部178b來開始電漿裝置170a的工作並在晶片D的傳送路徑上形成電漿區域P。在晶片D經過電漿處理區間P2的電漿結束位置P22的情況下，中斷電漿裝置170a的工作。When the wafer D enters the plasma start position P21 of the plasma processing section P2, the control unit 178b can start the operation of the plasma device 170a and form the plasma region P on the transfer path of the wafer D. When the wafer D passes through the plasma end position P22 in the plasma processing section P2, the operation of the plasma device 170a is interrupted.

為了使晶片D的下表面(接合面)經過電漿區域P，可以以晶片D與電漿裝置170a之間的上下間隔G小於向電漿裝置170a的上部露出的電漿區域P的厚度T的方式，確定晶片D的傳送高度和電漿裝置170a的位置(上表面高度)。電漿區域P可被形成為幾mm厚度，在該情況下，晶片D與電漿裝置170a之間的上下間隔G可被設計為小於電漿區域P的厚度的幾mm距離。In order to allow the lower surface (bonding surface) of the wafer D to pass through the plasma region P, the vertical interval G between the wafer D and the plasma device 170a may be smaller than the thickness T of the plasma region P exposed to the upper portion of the plasma device 170a. In this way, the transfer height of the wafer D and the position of the plasma device 170a (the height of the upper surface) are determined. The plasma region P may be formed to a thickness of several mm, and in this case, the upper and lower interval G between the wafer D and the plasma device 170a may be designed to be a distance of several mm smaller than the thickness of the plasma region P.

電漿開始位置P21和電漿結束位置P22不會因電漿而在接合頭部140上發生電弧放電，可被設定為能夠對晶片D的接合面整體進行親水化。在電漿處理區間P2被設定為過寬的情況下，接合頭部140發生電弧放電的危險加大，並且因電漿裝置170a的工作時間變長且為所需以上而增加工藝費用。此外，在電漿處理區間P2被設定為過窄的情況下，晶片D的接合面的前後端邊緣部有可能未被局部親水化，或者晶片D的接合面親水化狀態有可能沿第一方向X不均勻。The plasma start position P21 and the plasma end position P22 do not cause arc discharge on the bonding head 140 due to plasma, and can be set to be able to hydrophilize the entire bonding surface of the wafer D. When the plasma processing section P2 is set to be too wide, the risk of arc discharge in the bonding head 140 increases, and the working time of the plasma device 170a becomes longer than necessary, which increases the process cost. In addition, when the plasma processing interval P2 is set to be too narrow, the front and rear edges of the bonding surface of the wafer D may not be locally hydrophilized, or the hydrophilization state of the bonding surface of the wafer D may be along the first direction. X is not uniform.

在實施例中，電漿開始位置P21和電漿結束位置P22分別可被設定為抵接板144的前端部開始進入電漿區域P的位置和抵接板144的後端部開始脫離電漿區域P的位置。晶片D在電漿處理區間P2的傳送速度可被設定為與晶片D在電漿處理區間P2前後的傳送速度相同或慢於該傳送速度。In an embodiment, the plasma start position P21 and the plasma end position P22 can be respectively set as the position where the front end of the abutment plate 144 starts to enter the plasma region P and the rear end of the abutment plate 144 starts to leave the plasma region. P's location. The transfer speed of the wafer D in the plasma processing zone P2 can be set to be the same as or slower than the transfer speed of the wafer D before and after the plasma processing zone P2.

即便在電漿處理區間P2中不放慢晶片D的傳送速度，也能夠對晶片D的接合面進行充分親水化的情況下，為了提高生產率而在電漿處理區間P2中能夠沒有速度變化地傳送晶片D。當在電漿處理區間P2中不放慢晶片D的傳送速度的情況下晶片D的接合面無法得到充分的親水化效果時，能夠在電漿處理區間P2中減速接合頭部140的移動速度。在減慢晶片D的傳送速度的情況下，也可以與電漿處理區間P2同步化地控制接合頭部140的移動速度，在晶片D進入電漿處理區間P2之前也能夠按設定距離預先減速接合頭部140的傳送速度。同樣能夠利用與電漿裝置170a類似的方法，根據晶片D的位置控制液滴噴霧裝置170b的工作，液滴噴霧裝置170b能夠與電漿裝置170a聯動地工作。即，在開始電漿裝置170a的工作的同時，還開始液滴噴霧裝置170b的工作，在結束電漿裝置170a的工作的情況下，還可以結束液滴噴霧裝置170b的工作。Even if the transfer speed of the wafer D is not slowed down in the plasma processing section P2, if the bonding surface of the wafer D can be sufficiently hydrophilized, in order to improve the productivity, it can be transferred without speed change in the plasma processing section P2 Wafer D. When the transfer speed of the wafer D is not slowed down in the plasma processing section P2, when the bonding surface of the wafer D cannot be sufficiently hydrophilized, the moving speed of the bonding head 140 can be reduced in the plasma processing section P2. When the transfer speed of the wafer D is slowed down, the moving speed of the bonding head 140 can be controlled in synchronization with the plasma processing section P2, and the bonding can be decelerated in advance by a set distance before the wafer D enters the plasma processing section P2 The transmission speed of the head 140. It is also possible to use a method similar to the plasma device 170a to control the operation of the droplet spray device 170b according to the position of the wafer D, and the droplet spray device 170b can work in conjunction with the plasma device 170a. That is, when the operation of the plasma device 170a is started, the operation of the droplet spraying device 170b is also started, and when the operation of the plasma device 170a is ended, the operation of the droplet spraying device 170b can also be ended.

圖12至圖15是用於說明構造本發明的實施例所涉及的晶片接合裝置的第二電漿處理部的操作的圖。參照圖5、圖6、圖12至圖15，第二親水化處理部180用於對基板M2上的接合區域BA進行親水化處理，與第一電漿處理部170類似，可包括電漿裝置180a和液滴噴霧裝置180b。圖12表示第二電漿處理部180處於後退區域的狀態，圖13及圖14表示第二電漿處理部180為了對基板MW上的接合區域BA進行浸濕處理而處於接合區域BA的上部區域的狀態。12 to 15 are diagrams for explaining the operation of the second plasma processing unit configuring the wafer bonding apparatus according to the embodiment of the present invention. 5, 6, and 12 to 15, the second hydrophilization treatment part 180 is used to hydrophilize the bonding area BA on the substrate M2. Similar to the first plasma treatment part 170, it may include a plasma device 180a and droplet spray device 180b. FIG. 12 shows a state where the second plasma treatment section 180 is in the retreat area, and FIGS. 13 and 14 show that the second plasma treatment section 180 is in the upper region of the bonding area BA in order to wet the bonding area BA on the substrate MW. status.

電漿裝置180a在下部形成有包含親水基團的電漿區域P。液滴噴霧裝置180b設置在與電漿裝置180a的噴嘴(電漿尖端)相鄰的位置上，並且向由電漿裝置180a形成的電漿區域P噴射微細液滴。液滴噴霧裝置180b可包括向電漿區域P噴射微細液滴的超音波液滴噴霧器。超音波液滴噴霧器可包括：超音波液滴發生器181a，利用超音波發生微細液滴；和液滴噴霧噴嘴181b，用於將由超音波液滴發生器181a發生的微細液滴供給到電漿區域P。The plasma device 180a has a plasma region P containing a hydrophilic group formed in the lower part. The droplet spraying device 180b is provided at a position adjacent to the nozzle (plasma tip) of the plasma device 180a, and sprays fine droplets to the plasma region P formed by the plasma device 180a. The droplet spray device 180b may include an ultrasonic droplet sprayer that sprays fine droplets to the plasma region P. The ultrasonic droplet sprayer may include: an ultrasonic droplet generator 181a for generating fine droplets using ultrasonic waves; and a droplet spray nozzle 181b for supplying the fine droplets generated by the ultrasonic droplet generator 181a to the plasma Area P.

為了向電漿裝置180a與基板MW之間的幾mm以內的窄空間噴射微細液滴，液滴噴霧噴嘴181b可被提供為直徑窄(小於幾mm)的長噴嘴管形態。液滴噴霧噴嘴181b可以以能夠向基板MW與電漿裝置180a之間的空間均勻地噴射微細液滴的方式，沿水平方向(例如，X軸方向)設置。In order to spray fine droplets into a narrow space within a few mm between the plasma device 180a and the substrate MW, the droplet spray nozzle 181b may be provided in the form of a long nozzle tube with a narrow diameter (less than a few mm). The droplet spray nozzle 181b may be arranged in a horizontal direction (for example, the X-axis direction) so as to uniformly spray fine droplets into the space between the substrate MW and the plasma device 180a.

與第一親水化處理部170同樣，第二親水化處理部180在藉由電漿裝置180a在電漿裝置180a的噴嘴(電漿尖端)外部形成電漿區域P的同時，藉由液滴噴霧裝置180b向電漿區域P噴射純水等的微細液滴，從而生成液體電漿。藉由由微細液滴生成的OH自由基來加大液滴的親水性，並且增加基板MW的親水性。此外，因微細液滴而在基板MW上的接合區域形成較薄的液膜，加大基板MW與晶片D的預接合力。此外，藉由利用超音波噴霧器將純水製作成微細液滴並噴霧，從而增加液滴表面積並發生更多量的OH自由基，並且微細液滴均勻地分佈在電漿區域P而還提高OH自由基的均勻度。Similar to the first hydrophilization treatment part 170, the second hydrophilization treatment part 180 forms a plasma region P outside the nozzle (plasma tip) of the plasma device 180a by the plasma device 180a, and sprays the plasma area P by droplets. The device 180b sprays fine droplets of pure water or the like onto the plasma region P to generate liquid plasma. The OH radicals generated by the fine droplets increase the hydrophilicity of the droplets and increase the hydrophilicity of the substrate MW. In addition, a thin liquid film is formed in the bonding area on the substrate MW due to the fine droplets, and the pre-bonding force between the substrate MW and the wafer D is increased. In addition, by using an ultrasonic sprayer to make pure water into fine droplets and spray them, the surface area of the droplets is increased and a greater amount of OH radicals are generated, and the fine droplets are evenly distributed in the plasma region P to increase OH. The uniformity of free radicals.

第二親水化處理部180從後退位置向接合台120的上部區域移動並對支撐在接合台120上的基板MW上的與晶片D接合的接合區域BA進行親水化處理。在本說明書中，對“基板上”的接合區域進行親水化的情況包括對基板的上表面直接進行親水化處理的情況或者對層壓在基板上的一個或多個層的晶片的上表面進行親水化的情況。The second hydrophilization treatment section 180 moves from the retracted position to the upper region of the bonding stage 120 and performs hydrophilization treatment on the bonding area BA on the substrate MW supported on the bonding stage 120 to be bonded to the wafer D. In this specification, the case of hydrophilizing the bonding area "on the substrate" includes the case where the upper surface of the substrate is directly hydrophilized, or the upper surface of one or more layers of wafers laminated on the substrate is hydrophilized. The case of hydrophilization.

可以沿傳送軌道132在接合台120的上部區域與遠離接合台120的後退區域之間傳送第二親水化處理部180。第二親水化處理部180可藉由能夠移動地接合到傳送軌道132的移動單元182沿第一方向X移動。可藉由安裝在移動單元182上的升降部180c沿第三方向Z升降驅動第二親水化處理部180。由此，可以以適合基板MW的親水化處理的方式調節電漿裝置180a及液滴噴霧裝置180b的高度及位置。在從支撐單元110向接合台120傳送晶片D的期間，如圖13及圖14所示，第二親水化處理部180能夠位於基板MW上並對基板MW上的接合區域BA進行親水化處理。The second hydrophilization treatment part 180 may be conveyed between the upper area of the bonding table 120 and the retreat area away from the bonding table 120 along the conveying rail 132. The second hydrophilization treatment part 180 may be moved in the first direction X by the moving unit 182 movably coupled to the transfer rail 132. The second hydrophilization treatment part 180 can be driven up and down along the third direction Z by the lifting part 180 c installed on the moving unit 182. Thereby, the height and position of the plasma device 180a and the droplet spray device 180b can be adjusted to suit the hydrophilization treatment of the substrate MW. During the transfer of the wafer D from the support unit 110 to the bonding stage 120, as shown in FIGS. 13 and 14, the second hydrophilization treatment part 180 can be located on the substrate MW and perform hydrophilization treatment on the bonding area BA on the substrate MW.

如果在向接合台120傳送晶片D的期間，藉由第二親水化處理部180對基板MW上的接合區域進行親水化，則如圖14所示，為了接合頭部140能夠進入基板MW上的接合區域，第二親水化處理部180從接合台120的上部區域移動並向待機位置(後退位置)後退。在第二親水化處理部180移動至後退區域的情況下，接合頭部140向基板MW的上部移動之後下降晶片D並使其基板MW上的接合區域BA接觸。如果在晶片D的接合面接觸到接合區域BA上的狀態下接合頭部140解除晶片D的拾取狀態，則在基板MW上層壓晶片D，藉由晶片D的經親水化的接合面、晶片D及基板MW的液膜DL以及基板MW的經親水化的接合區域之間的接合力(氫鍵合力)，在基板MW上預接合晶片D。If during the transfer of the wafer D to the bonding stage 120, the bonding area on the substrate MW is hydrophilized by the second hydrophilization treatment section 180, as shown in FIG. 14, the bonding head 140 can enter the substrate MW. In the joining area, the second hydrophilization treatment section 180 moves from the upper area of the joining table 120 and retreats to the standby position (retracted position). When the second hydrophilization treatment part 180 moves to the retreat area, the bonding head 140 moves to the upper part of the substrate MW and then lowers the wafer D to bring the bonding area BA on the substrate MW into contact. If the bonding head 140 releases the pickup state of the wafer D in a state where the bonding surface of the wafer D is in contact with the bonding area BA, the wafer D is laminated on the substrate MW, and the hydrophilized bonding surface of the wafer D, the wafer D And the bonding force (hydrogen bonding force) between the liquid film DL of the substrate MW and the hydrophilized bonding area of the substrate MW, the wafer D is pre-bonded to the substrate MW.

根據需要，也可以具備向晶片D的接合面和/或基板MW上的接合區域噴射純水的浸濕裝置(未圖示)。例如，浸濕裝置能夠藉由朝向上部設置的噴射噴嘴向上方噴射純水而在晶片D的接合面上進一步形成水膜，或者藉由朝向下部設置的噴射噴嘴向下方噴射純水而在基板MW的接合區域上進一步形成水膜。在利用第一親水化處理部170及第二親水化處理部180能夠獲得充分的預接合力的情況下可省略其他沖洗工藝。If necessary, a wetting device (not shown) that sprays pure water on the bonding surface of the wafer D and/or the bonding area on the substrate MW may be provided. For example, the soaking device can further form a water film on the bonding surface of the wafer D by spraying pure water upward from a spray nozzle installed on the upper part, or spray pure water downward on the substrate MW by spraying pure water downward from a spray nozzle provided below. A water film is further formed on the bonding area. In the case where sufficient pre-bonding force can be obtained by the first hydrophilization treatment part 170 and the second hydrophilization treatment part 180, other rinsing processes can be omitted.

再次參照圖5及圖6，對準檢查部190為了對準晶片D和基板MW而基於視覺識別晶片D與基板MW的位置，並且確定基板MW上的接合區域。對準檢查部190也可以被提供為能夠沿傳送軌道132在第一方向X上移動，並且還可以固定設置於框架130。可以以晶片D和基板MW的位置為基礎，控制第二親水化處理部180的位置及晶片D與基板MW的對準位置。接合台120可被提供為能夠順著沿第二方向Y排列的導軌122移動。能夠藉由接合台120沿左右方向(第二方向)調節基板MW的位置。5 and 6 again, in order to align the wafer D and the substrate MW, the alignment inspection unit 190 visually recognizes the positions of the wafer D and the substrate MW, and determines the bonding area on the substrate MW. The alignment check part 190 may also be provided to be able to move in the first direction X along the conveying rail 132, and may also be fixedly provided to the frame 130. The position of the second hydrophilization treatment part 180 and the alignment position of the wafer D and the substrate MW can be controlled based on the positions of the wafer D and the substrate MW. The joining table 120 may be provided to be able to move along the guide rail 122 arranged in the second direction Y. The position of the substrate MW can be adjusted in the left-right direction (second direction) by the bonding stage 120.

圖16是舉例說明根據本發明的實施例在基板上預接合有多個晶片的圖。在藉由對多個晶片D依次反復執行如上所述的過程而在基板MW上預接合多個晶片D的情況下，預接合有多個晶片D的基板MW被基板運送裝置(未圖示)移動到熱處理單元(未圖示)。熱處理單元能夠向基板MW與晶片D之間施加電源，藉由對預接合有晶片D的基板MW進行熱處理而將多個晶片D同時後接合到基板MW上。FIG. 16 is a diagram illustrating a plurality of wafers pre-bonded on a substrate according to an embodiment of the present invention. In the case of pre-bonding a plurality of wafers D on the substrate MW by sequentially repeating the above-mentioned process on the plurality of wafers D, the substrate MW pre-bonded with the plurality of wafers D is subjected to a substrate transport device (not shown) Move to the heat treatment unit (not shown). The heat treatment unit can apply power between the substrate MW and the wafer D, and heat the substrate MW to which the wafer D is pre-bonded, thereby simultaneously bonding a plurality of wafers D to the substrate MW.

圖17至圖21是用於說明本發明的實施例所涉及的晶片接合方法的示意圖。首先，參照圖17，藉由在基板MW的上表面上形成電漿區域P並向電漿區域P噴射微細液滴而將基板MW的上表面形成為親水面PS1。在實施例中，對於基板MW，在矽基材14上形成有貫通電極16，可以是除貫通電極16以外的上表面和下表面具有絕緣膜12、18的TSV基板。17 to 21 are schematic diagrams for explaining the wafer bonding method according to the embodiment of the present invention. First, referring to FIG. 17, by forming a plasma region P on the upper surface of the substrate MW and spraying fine droplets on the plasma region P, the upper surface of the substrate MW is formed as a hydrophilic surface PS1. In the embodiment, for the substrate MW, the through electrode 16 is formed on the silicon base 14, and it may be a TSV substrate having insulating films 12 and 18 on the upper and lower surfaces other than the through electrode 16.

參照圖18，在經由電漿處理及微細液滴噴霧而親水化處理的基板MW的接合區域上形成有較薄的液膜DL。參照圖19，將藉由電漿及微細液滴噴霧而下表面形成為親水表面PS2的晶片D層壓在基板MW的接合區域上。晶片D可以在矽基材24上形成有貫通電極26且除貫通電極26以外的上表面及下表面具有絕緣膜22、28的TSV晶片。參照圖17至圖20，在基板MW上預接合晶片D之後進行熱處理，從而加熱及硬化形成在基板MW和晶片D的介面上的親水面PS1、液膜DL及親水表面PS2，藉由接合介面BL而在基板MW上完全接合有晶片D。Referring to FIG. 18, a thin liquid film DL is formed on the bonding area of the substrate MW that has been hydrophilized through plasma processing and fine droplet spraying. Referring to FIG. 19, a wafer D whose lower surface is formed as a hydrophilic surface PS2 by plasma and fine droplet spray is laminated on the bonding area of the substrate MW. The wafer D may be a TSV wafer in which through electrodes 26 are formed on the silicon substrate 24 and insulating films 22 and 28 are provided on the upper and lower surfaces except for the through electrodes 26. 17 to 20, after pre-bonding the wafer D on the substrate MW, heat treatment is performed to heat and harden the hydrophilic surface PS1, the liquid film DL, and the hydrophilic surface PS2 formed on the interface between the substrate MW and the wafer D, by bonding the interface BL and the wafer D is completely bonded to the substrate MW.

圖21是舉例說明根據本發明的實施例在基板上層壓接合有多個晶片的圖。參照圖21，在基板MW上依次層壓及預接合多個晶片D之後，能夠藉由熱處理使基板MW與晶片D之間或晶片之間的接合介面有效地硬化來一次性後接合基板MW和多個晶片D而製造三維半導體。根據本發明的實施例，藉由利用電漿處理的預接合工藝及利用熱處理的後接合工藝，能夠接合TSV晶片而不使用如接合膜或焊料凸點等的其他接合介質。因此，不存在因焊料凸點導致的擺動或因與周邊焊料凸點連接而導致的短路、通電不良等問題，能夠提高半導體的品質，並且能夠與I/O間距微細化無關地接合TSV晶片。此外，在不中斷晶片的傳送的狀態下能夠藉由電漿及微細液滴使晶片的接合面親水化，同時在晶片的傳送過程中能夠藉由電漿及微細液滴使基板上的接合區域親水化，從而使待機時間最小化並能夠飛快處理預接合工藝。FIG. 21 is a diagram illustrating that a plurality of wafers are laminated and bonded on a substrate according to an embodiment of the present invention. 21, after sequentially laminating and pre-bonding a plurality of wafers D on a substrate MW, the bonding interface between the substrate MW and the wafer D or between the wafers can be effectively hardened by heat treatment to bond the substrate MW and A plurality of wafers D are used to manufacture a three-dimensional semiconductor. According to the embodiment of the present invention, the TSV wafer can be bonded without using other bonding media such as bonding film or solder bumps by using a pre-bonding process using plasma treatment and a post-bonding process using heat treatment. Therefore, there are no problems such as wobble due to solder bumps, short circuits due to connection with peripheral solder bumps, and poor energization. The quality of semiconductors can be improved, and TSV wafers can be bonded regardless of the miniaturization of the I/O pitch. In addition, the bonding surface of the wafer can be hydrophilized by plasma and fine droplets without interrupting the transfer of the wafer. At the same time, the bonding area on the substrate can be made by the plasma and fine droplets during the wafer transfer. Hydrophilization minimizes the standby time and enables fast processing of the pre-bonding process.

圖22是本發明的另一實施例所涉及的晶片接合裝置的示意性側視圖。圖23是用於說明圖22的實施例所涉及的晶片接合裝置的操作的圖。參照圖22及圖23，晶片接合裝置100可進一步包括傳送裝置210，該傳送裝置210使第一親水化處理部170順著沿晶片D的傳送方向(第一方向，X)排列的導軌220移動。Fig. 22 is a schematic side view of a wafer bonding apparatus according to another embodiment of the present invention. FIG. 23 is a diagram for explaining the operation of the wafer bonding apparatus according to the embodiment of FIG. 22. 22 and FIG. 23, the wafer bonding apparatus 100 may further include a transfer device 210 that moves the first hydrophilization treatment portion 170 along a guide rail 220 arranged along the transfer direction (first direction, X) of the wafer D .

傳送裝置210在晶片D在電漿處理區間移動的期間能夠以與晶片D的傳送速度(或接合頭部的傳送速度)相同或低於晶片D的傳送速度V1的速度移動第一親水化處理部170。在接合頭部140的移動速度V1與第一親水化處理部170的移動速度V2相同的情況下，晶片D與第一親水化處理部170的相對速度為0，能獲得如晶片D向接合台120側移動的同時在晶片D停止的狀態下進行電漿處理那樣的高親水性效果。The transfer device 210 can move the first hydrophilization treatment section at a speed equal to or lower than the transfer speed V1 of the wafer D while the wafer D is moving in the plasma processing section. 170. When the moving speed V1 of the bonding head 140 is the same as the moving speed V2 of the first hydrophilization treatment part 170, the relative speed of the wafer D and the first hydrophilization treatment part 170 is 0, and it is possible to obtain such a While the 120 side is moving, the high hydrophilicity effect such as plasma processing is performed while the wafer D is stopped.

在使第一親水化處理部170以低於晶片D的傳送速度V1的速度移動的情況下，能獲得如快速傳送晶片D的同時晶片D以慢於實際傳送速度V1的速度(V1-V2)經過第一親水化處理部170的電漿區域P那樣的親水性效果。因此，根據圖22及圖23的實施例，能獲得能夠高速傳送晶片D的同時藉由第一親水化處理部170對晶片D的接合面進行充分的親水化處理的效果。In the case where the first hydrophilization treatment section 170 is moved at a speed lower than the conveying speed V1 of the wafer D, it is possible to obtain the fast conveyance of the wafer D while the wafer D is slower than the actual conveying speed V1 (V1-V2) After passing through the first hydrophilization treatment section 170, the plasma region P has a hydrophilic effect. Therefore, according to the embodiment of FIG. 22 and FIG. 23, it is possible to obtain the effect that the first hydrophilization treatment section 170 can sufficiently hydrophilize the bonding surface of the wafer D while transferring the wafer D at a high speed.

作為接合台120、接合頭部140、第二親水化處理部180、對準檢查部190、傳送裝置210等的驅動源，例如可使用驅動馬達、液壓缸體、空壓缸體等的多種驅動機構。此外，驅動方式也並未由圖示限制，可使用傳送帶、齒條/小齒輪、螺旋齒輪等的多種驅動機構。As the driving source of the bonding table 120, the bonding head 140, the second hydrophilization treatment part 180, the alignment inspection part 190, the conveying device 210, etc., for example, a variety of drives such as a driving motor, a hydraulic cylinder, and a pneumatic cylinder can be used. mechanism. In addition, the driving method is not limited by the illustration, and various driving mechanisms such as conveyor belts, rack/pinion gears, and helical gears can be used.

圖24是本發明的又一實施例所涉及的晶片接合裝置的示意性側視圖。參照圖24，第一親水化處理部170可被構造為包括反應性離子蝕刻電漿裝置170c和表面活性化電漿裝置170a的多個電漿裝置。反應性離子蝕刻電漿裝置170c可以是對晶片D的接合面進行反應性離子蝕刻(RIE；Reactive Ion Etching)電漿處理的RIE電漿裝置。表面活性化電漿裝置170a可以是對晶片D的接合面進行表面活性化(Surface Activation)電漿處理的親水化電漿裝置。24 is a schematic side view of a wafer bonding apparatus according to another embodiment of the present invention. 24, the first hydrophilization treatment part 170 may be configured as a plurality of plasma devices including a reactive ion etching plasma device 170c and a surface activation plasma device 170a. The reactive ion etching plasma apparatus 170c may be an RIE plasma apparatus that performs reactive ion etching (RIE; Reactive Ion Etching) plasma processing on the bonding surface of the wafer D. The surface activation plasma device 170a may be a hydrophilization plasma device that performs surface activation (Surface Activation) plasma treatment on the bonding surface of the wafer D.

為了在晶片D的傳送過程中對晶片D的接合面依次執行反應性離子蝕刻電漿處理及表面活性化電漿處理，反應性離子蝕刻電漿裝置170c及表面活性化電漿裝置170a可以沿支撐單元110與接合台120之間的晶片D的直線上的傳送路徑依次配置。晶片D在因接合頭部140而經過反應性離子蝕刻電漿裝置170c的上部的同時受到反應性離子蝕刻處理之後，經過表面活性化電漿裝置170a的上部的同時受到表面活性化電漿處理而實現親水化。In order to sequentially perform reactive ion etching plasma treatment and surface activation plasma treatment on the bonding surface of the wafer D during the transfer process of the wafer D, the reactive ion etching plasma device 170c and the surface activation plasma device 170a can be supported along The linear transport path of the wafer D between the unit 110 and the bonding stage 120 is arranged in order. After the wafer D passes through the upper part of the reactive ion etching plasma device 170c due to the bonding head 140 and is subjected to the reactive ion etching process, it passes through the upper part of the surface activation plasma device 170a while being subjected to the surface activation plasma treatment. Achieve hydrophilization.

反應性離子蝕刻電漿裝置170c可被提供為在低溫及低壓(例如，常溫，60～100Pa)下以50～300W電力工作的氧RIE電漿裝置，藉由高頻(RF)RIE電漿處理對晶片D的接合面進行蝕刻並使其平滑化，並且去除污染物且使表面氧化。表面活性化電漿裝置170a可被提供為在低溫及低壓(例如，常溫，60～100Pa)下以200～300W電力工作的氮自由基電漿裝置，能夠藉由使親水基團附著在晶片D的接合面上而提高化學反應性及預接合力。The reactive ion etching plasma device 170c can be provided as an oxygen RIE plasma device that operates at 50 to 300 W at low temperature and low pressure (for example, normal temperature, 60 to 100 Pa), by high frequency (RF) RIE plasma processing The bonding surface of the wafer D is etched and smoothed, and contaminants are removed and the surface is oxidized. The surface activation plasma device 170a can be provided as a nitrogen radical plasma device that operates at 200 to 300 W at low temperature and low pressure (for example, normal temperature, 60 to 100 Pa), and can attach hydrophilic groups to the chip D. The bonding surface improves chemical reactivity and pre-bonding force.

根據本發明的實施例，藉由依次電漿處理而使晶片D的接合面親水化，在基板MW與晶片D的預接合時能夠防止在基板MW與晶片D之間的介面上形成空腔(cavity)，並且能夠防止因形成於空腔的氣體導致的接合力下降、半導體特性變化及結構變形等。此外，藉由在依次電漿處理晶片和基板之後，在後接合工藝中進行熱處理，從而能夠與晶片和基板的種類(半導體、玻璃、絕緣體等)或接合介面物質的種類(Si、Ge、C、玻璃、高分子物質等)無關地得到高接合力。According to the embodiment of the present invention, the bonding surface of the wafer D is hydrophilized by sequential plasma treatment, which prevents a cavity from being formed on the interface between the substrate MW and the wafer D during the pre-bonding of the substrate MW and the wafer D ( cavity), and can prevent the decrease in bonding force, changes in semiconductor characteristics, and structural deformation due to the gas formed in the cavity. In addition, by sequentially treating the wafer and substrate with plasma, and then performing heat treatment in the post-bonding process, it can be matched with the type of wafer and substrate (semiconductor, glass, insulator, etc.) or the type of bonding interface material (Si, Ge, C). , Glass, polymer materials, etc.) to obtain high bonding strength regardless of.

圖25是表示構造本發明的又一實施例所涉及的晶片接合裝置的第二親水化處理部的圖。圖26是表示圖25所示的第二親水化處理部的操作的圖。參照圖25及圖26，第二親水化處理部220對基板MW的接合區域依次進行電漿處理並使其親水化的同時，向電漿區域噴射微細液滴而能夠提供親水化性能。第二親水化處理部20可包括第一電漿裝置221、第二電漿裝置222及液滴噴霧裝置222b。FIG. 25 is a diagram showing a second hydrophilization treatment section configuring a wafer bonding apparatus according to another embodiment of the present invention. Fig. 26 is a diagram showing the operation of the second hydrophilization treatment section shown in Fig. 25. Referring to FIGS. 25 and 26, the second hydrophilization treatment section 220 sequentially performs plasma treatment on the bonding area of the substrate MW and hydrophilizes it, and at the same time sprays fine droplets to the plasma area to provide hydrophilization performance. The second hydrophilization treatment part 20 may include a first plasma device 221, a second plasma device 222, and a droplet spray device 222b.

第一電漿裝置221可以是反應性離子蝕刻電漿裝置。第一電漿裝置221利用電漿尖端221a來生成電漿並藉由高頻(RF)RIE電漿處理對基板MW的接合區域進行蝕刻並使其平滑化，並且去除污染物且使表面氧化。第二電漿裝置222可以是藉由將親水基團附著到基板MW的接合區域而提高化學反應性及預接合力的表面活性化電漿裝置。液滴噴霧裝置222b可設置在與第二電漿裝置222的電漿尖端222a相鄰的位置上並向從電漿尖端222a發生的電漿區域噴射微細液滴。The first plasma device 221 may be a reactive ion etching plasma device. The first plasma device 221 uses the plasma tip 221a to generate plasma and etches and smoothes the bonding area of the substrate MW by high-frequency (RF) RIE plasma processing, removes contaminants and oxidizes the surface. The second plasma device 222 may be a surface-activated plasma device that improves chemical reactivity and pre-bonding force by attaching hydrophilic groups to the bonding area of the substrate MW. The droplet spraying device 222b may be arranged at a position adjacent to the plasma tip 222a of the second plasma device 222 and spray fine droplets to the plasma area generated from the plasma tip 222a.

第一電漿裝置221和第二電漿裝置222可藉由接合到傳送軌道228的移動主體227而沿第一方向X移動，並且與由移動主體227的第一驅動部226驅動的上部主體225接合而能夠沿第二方向Y移動。此外，第一電漿裝置221和第二電漿裝置222接合到由上部主體225的第二驅動部224驅動的下部主體223而能夠沿第三方向Z升降。The first plasma device 221 and the second plasma device 222 can move in the first direction X by being joined to the moving body 227 of the conveying rail 228, and are compatible with the upper body 225 driven by the first driving part 226 of the moving body 227. It is joined to be able to move in the second direction Y. In addition, the first plasma device 221 and the second plasma device 222 are joined to the lower body 223 driven by the second driving portion 224 of the upper body 225 and can be raised and lowered in the third direction Z.

第一電漿裝置221和第二電漿裝置222可以在下部主體223的下方並排排列。如圖26所示，第一電漿裝置221和第二電漿裝置222可以沿基板MW的平面方向移動的同時依次電漿處理基板MW的上表面。基板MW首先可藉由第一電漿處理裝置221被RIE電漿處理之後，接著藉由第二電漿裝置222和液滴噴霧裝置222b被親水化處理。The first plasma device 221 and the second plasma device 222 may be arranged side by side under the lower body 223. As shown in FIG. 26, the first plasma device 221 and the second plasma device 222 can sequentially plasma-process the upper surface of the substrate MW while moving in the planar direction of the substrate MW. The substrate MW can be firstly processed by RIE plasma by the first plasma processing device 221, and then be hydrophilized by the second plasma device 222 and the droplet spray device 222b.

圖27是構造本發明的又一實施例所涉及的晶片接合裝置的第二親水化處理部的側視圖。圖28及圖29是表示圖27的實施例所涉及的第二親水化處理部的操作的圖。參照圖27至圖29，第二親水化處理部240包括電漿裝置241、液滴噴霧裝置241b、主體242、升降驅動部243、移動主體244及傳送軌道245。電漿裝置241藉由電漿尖端241a生成電漿並使基板MW親水化。液滴噴霧裝置241b藉由向由電漿裝置241形成的電漿區域噴射微細液滴而提高親水化性能。Fig. 27 is a side view of a second hydrophilization treatment section configuring a wafer bonding apparatus according to another embodiment of the present invention. FIGS. 28 and 29 are diagrams showing the operation of the second hydrophilization treatment unit according to the embodiment of FIG. 27. 27-29, the second hydrophilization treatment part 240 includes a plasma device 241, a droplet spray device 241b, a main body 242, an up-and-down driving part 243, a moving main body 244, and a transport rail 245. The plasma device 241 generates plasma by the plasma tip 241a and hydrophilizes the substrate MW. The droplet spraying device 241b sprays fine droplets to the plasma region formed by the plasma device 241 to improve the hydrophilization performance.

電漿裝置241與由移動主體244的升降驅動部243驅動的主體242接合而能夠藉由升降驅動部243沿第三方向Z移動，並且能夠藉由移動主體244沿第一方向X移動。此外，電漿裝置241可被提供為還能夠沿第二方向Y移動。根據圖27至圖29的實施例，能夠利用一個電漿裝置241使基板MW和晶片D依次親水化。The plasma device 241 is engaged with the main body 242 driven by the lifting drive portion 243 of the moving main body 244 and can be moved in the third direction Z by the lifting drive portion 243 and can be moved in the first direction X by the moving main body 244. In addition, the plasma device 241 may be provided to also be able to move in the second direction Y. According to the embodiments of FIGS. 27 to 29, one plasma device 241 can be used to hydrophilize the substrate MW and the wafer D sequentially.

首先，如圖27所示，第二親水化處理部240在電漿裝置241和液滴噴霧裝置241b向基板MW側下降的狀態下，在基板MW上的接合區域生成電漿並在電漿區域生成微細液滴而使接合區域親水化。藉由電漿尖端241a使電漿集中於基板MW上的接合區域的同時，並且藉由噴射到電漿區域的微細液滴增加OH自由基，從而能夠高效地進行親水化處理，並且能夠削減親水化處理費用。在晶片D向接合台120移動的期間能夠執行關於基板MW的親水化處理。First, as shown in FIG. 27, the second hydrophilization treatment section 240 generates plasma in the bonding area on the substrate MW in a state where the plasma device 241 and the droplet spray device 241b are lowered toward the substrate MW, and the plasma Fine droplets are generated to hydrophilize the bonding area. The plasma tip 241a concentrates the plasma on the bonding area on the substrate MW, and the fine droplets sprayed on the plasma area increase the OH radicals, thereby efficiently performing hydrophilization treatment and reducing hydrophilization Chemical processing costs. During the movement of the wafer D to the bonding stage 120, the hydrophilization treatment on the substrate MW can be performed.

在對基板MW結束親水化處理的情況下，第二親水化處理部240使電漿裝置24和液滴噴霧裝置241b朝向上部移動之後，如圖28所示，使電漿裝置241和液滴噴霧裝置241b朝向接合頭部140移動。與此同時，在接合頭部140以滑架142為中心旋轉180°的情況下，晶片D的接合面位於電漿裝置241的電漿尖端241a的下方。When the hydrophilization treatment of the substrate MW is completed, the second hydrophilization treatment section 240 moves the plasma device 24 and the droplet spraying device 241b upward, and then, as shown in FIG. 28, causes the plasma device 241 and the droplet spraying The device 241b moves toward the engaging head 140. At the same time, when the bonding head 140 is rotated by 180° with the carriage 142 as the center, the bonding surface of the wafer D is located below the plasma tip 241 a of the plasma device 241.

接著，在電漿裝置241藉由電漿尖端241a在晶片D的接合面生成電漿的同時，液滴噴霧裝置241b可以向電漿區域噴射微細液滴而使晶片D的接合面親水化。此時，也能夠藉由電漿尖端241a使電漿集中於晶片D的接合面，並且能夠藉由微細液滴提高親水化性能，從而能夠高效地進行晶片D的親水化處理，並且能夠削減親水化處理費用。在接合頭部140的移動過程中能夠執行利用電漿裝置241及液滴噴霧裝置241b的親水化處理。此時，為了增加電漿尖端241a及液滴噴霧裝置241b中生成的電漿及微細液滴的接觸時間，能夠使電漿裝置241及液滴噴霧裝置241b沿接合頭部140的移動方向移動的同時，對晶片D的接合面進行親水化處理。在結束對晶片D的接合面的處理的情況下，如圖29所示，在使第二親水化處理部180後退且使接合頭部140再次向下旋轉180°之後，藉由降低接合頭部140而將晶片D預接合到基板MW上。Next, while the plasma device 241 generates plasma on the bonding surface of the wafer D by the plasma tip 241a, the droplet spraying device 241b can spray fine droplets to the plasma region to hydrophilize the bonding surface of the wafer D. At this time, the plasma tip 241a can also be used to concentrate the plasma on the bonding surface of the wafer D, and the hydrophilization performance can be improved by fine droplets, so that the hydrophilization treatment of the wafer D can be efficiently performed and the hydrophilization can be reduced. Chemical processing costs. During the movement of the bonding head 140, the hydrophilization treatment using the plasma device 241 and the droplet spray device 241b can be performed. At this time, in order to increase the contact time of the plasma and fine droplets generated in the plasma tip 241a and the droplet spray device 241b, the plasma device 241 and the droplet spray device 241b can be moved along the moving direction of the joint head 140 At the same time, the bonding surface of the wafer D is hydrophilized. When the processing of the bonding surface of the wafer D is finished, as shown in FIG. 29, after the second hydrophilization treatment portion 180 is retreated and the bonding head 140 is rotated downward again by 180°, the bonding head is lowered 140 and the wafer D is pre-bonded to the substrate MW.

電漿裝置241也可以被提供為大氣壓(常壓)或真空(低壓)電漿裝置，還可以被提供為順序電漿裝置。根據本實施例，能夠藉由利用電漿裝置241及液滴噴霧裝置241b來依次進行基板MW和晶片D的電漿處理而縮減用於親水化處理的工藝費用，並且還能夠縮短預接合工藝時間。The plasma device 241 may also be provided as an atmospheric pressure (normal pressure) or vacuum (low pressure) plasma device, and may also be provided as a sequential plasma device. According to this embodiment, the process cost for the hydrophilization process can be reduced by sequentially performing the plasma treatment of the substrate MW and the wafer D using the plasma device 241 and the droplet spray device 241b, and the pre-bonding process time can also be shortened .

圖30是構造本發明的又一實施例所涉及的晶片接合裝置的第二親水化處理部的側視圖。圖31是表示圖30的實施例所涉及的第二親水化處理部的操作的圖。參照圖30及圖31，第二親水化處理部250包括電漿裝置251、液滴噴霧裝置251b、主體252、升降驅動部253、移動主體254及傳送軌道255。Fig. 30 is a side view of a second hydrophilization treatment section configuring a wafer bonding apparatus according to another embodiment of the present invention. Fig. 31 is a diagram showing the operation of the second hydrophilization treatment unit according to the embodiment of Fig. 30. Referring to FIGS. 30 and 31, the second hydrophilization treatment part 250 includes a plasma device 251, a droplet spray device 251 b, a main body 252, an up-and-down driving part 253, a moving main body 254, and a transport rail 255.

電漿裝置251藉由電漿尖端251a生成電漿並使基板MW親水化。液滴噴霧裝置251b向從電漿尖端251a生成的電漿區域噴射微細液滴。電漿裝置251與由移動主體254的升降驅動部253驅動的主體252接合而能夠藉由升降驅動部253沿第三方向Z移動，並且能夠藉由移動主體254沿第一方向X移動。此外，電漿裝置251可被提供為還能夠沿第二方向Y移動。電漿裝置251可被提供為能夠藉由設置於主體252的旋轉部(未圖示)沿上下方向旋轉。根據圖30圖31的實施例，可利用一個電漿裝置251及一個液滴噴霧裝置251b對基板MW和晶片D依次進行親水化。The plasma device 251 generates plasma by the plasma tip 251a and hydrophilizes the substrate MW. The droplet spraying device 251b sprays fine droplets to the plasma region generated from the plasma tip 251a. The plasma device 251 is engaged with the main body 252 driven by the lifting drive portion 253 of the moving main body 254 and can be moved in the third direction Z by the lifting drive portion 253 and can be moved in the first direction X by the moving main body 254. In addition, the plasma device 251 may be provided to also be able to move in the second direction Y. The plasma device 251 may be provided to be able to rotate in the up-down direction by a rotating part (not shown) provided in the main body 252. According to the embodiment of FIG. 30 and FIG. 31, a plasma device 251 and a droplet spray device 251b can be used to sequentially hydrophilize the substrate MW and the wafer D.

首先，如圖30所示，電漿裝置251在基板MW上的接合區域生成電漿並使接合區域親水化，同時液滴噴霧裝置251b向電漿區域噴射微細液滴而提高親水化性能。電漿裝置251能夠藉由電漿尖端251a使電漿集中於基板MW上的接合區域。因此，能夠高效地進行等離子處理，並且能夠縮減電漿處理費用。在晶片D向接合台120移動的期間能夠執行關於基板MW的親水化處理。First, as shown in FIG. 30, the plasma device 251 generates plasma in the junction area on the substrate MW and hydrophilizes the junction area, and the droplet spray device 251b sprays fine droplets to the plasma area to improve the hydrophilization performance. The plasma device 251 can concentrate the plasma on the bonding area on the substrate MW by the plasma tip 251a. Therefore, plasma processing can be efficiently performed, and plasma processing costs can be reduced. During the movement of the wafer D to the bonding stage 120, the hydrophilization treatment on the substrate MW can be performed.

在對基板MW結束親水化處理的情況下，如圖31所示，使電漿裝置251及液滴噴霧裝置251b朝向接合頭部140移動，並且使主體252朝向下部移動之後，藉由使電漿裝置251及液滴噴霧裝置251b以主體252為中心朝向上部旋轉180°，從而使電漿尖端251b位於晶片D的接合面下方。電漿裝置251藉由電漿尖端251a在晶片D的接合面生成電漿並使晶片D的接合面親水化，此時能夠藉由由液滴噴霧裝置251b向電漿區域噴射微細液滴而提高親水化性能。When the hydrophilization treatment is completed on the substrate MW, as shown in FIG. 31, the plasma device 251 and the droplet spray device 251b are moved toward the bonding head 140, and the main body 252 is moved toward the lower part. The device 251 and the droplet spraying device 251b are rotated 180° upward with the main body 252 as the center, so that the plasma tip 251b is located below the bonding surface of the wafer D. The plasma device 251 generates plasma on the bonding surface of the wafer D by the plasma tip 251a and hydrophilizes the bonding surface of the wafer D. At this time, the droplet spray device 251b can spray fine droplets to the plasma area to improve Hydrophilization performance.

在接合頭部140的移動過程中能夠執行利用電漿裝置251及液滴噴霧裝置251b的親水化處理。此時，為了增加電漿尖端251a及液滴噴霧裝置251b中生成的電漿及微細液滴的接觸時間，也可以是電漿裝置251及液滴噴霧裝置251b沿接合頭部140的移動方向移動的同時，對晶片D的接合面進行親水化處理。在結束關於晶片D的接合面的親水化處理的情況下，藉由接合頭部140將晶片D配置在基板MW上並使其預接合。電漿裝置251可被提供為大氣壓(常壓)或真空(低壓)電漿裝置，還可以被提供為順序電漿裝置。根據本實施例，能夠藉由利用電漿裝置251及液滴噴霧裝置251b來依次進行基板MW和晶片D的電漿處理而縮減用於預接合的親水化處理費用，並且還能夠縮短預接合工藝時間。During the movement of the bonding head 140, the hydrophilization treatment using the plasma device 251 and the droplet spray device 251b can be performed. At this time, in order to increase the contact time of the plasma and fine droplets generated in the plasma tip 251a and the droplet spraying device 251b, the plasma device 251 and the droplet spraying device 251b may be moved along the moving direction of the bonding head 140 At the same time, the bonding surface of the wafer D is hydrophilized. When the hydrophilization treatment of the bonding surface of the wafer D is completed, the wafer D is arranged on the substrate MW by the bonding head 140 and pre-bonded. The plasma device 251 may be provided as an atmospheric pressure (normal pressure) or vacuum (low pressure) plasma device, and may also be provided as a sequential plasma device. According to this embodiment, by sequentially performing the plasma treatment of the substrate MW and the wafer D by the plasma device 251 and the droplet spray device 251b, the cost of the hydrophilization treatment for pre-bonding can be reduced, and the pre-bonding process can be shortened. time.

上述詳細說明用於舉例說明本發明。此外，上述內容表現並說明本發明的較佳實施方式，在多種其他組合、變更及環境下能夠使用本發明。即，在與本說明書中公開的發明的概念的範圍和撰述的公開內容均等的範圍和/或本領域的技術或知識範圍內能夠進行變更或修改。撰述的實施例說明用於實現本發明的技術思想的最佳狀態，還可以進行本發明的具體應用領域及用途所要求的各種變更。因此，以上發明的詳細說明並非由公開的實施方式來限制本發明。此外，應解釋為所附的申請專利範圍還包含其他實施方式。The above detailed description is used to illustrate the present invention. In addition, the above content represents and explains the preferred embodiments of the present invention, and the present invention can be used in various other combinations, changes, and environments. That is, changes or modifications can be made within the scope equivalent to the scope of the concept of the invention disclosed in this specification and the content of the disclosure and/or within the scope of the technology or knowledge in this field. The described embodiments illustrate the best state for realizing the technical ideas of the present invention, and various changes required by the specific application fields and uses of the present invention can also be made. Therefore, the above detailed description of the invention does not limit the invention by the disclosed embodiments. In addition, it should be construed that the attached patent application scope also includes other embodiments.

1:主晶片 2、3、3a:TSV晶片 3b:接合膜 3c:焊料凸點 4:接合頭部 12、18、22、28:絕緣膜 14、24:矽基材 16、26:貫通電極 100:晶片接合裝置 110:支撐單元 120:接合台 122:導軌 130:框架 132:傳送軌道 134:支撐部 136:通道 140:接合頭部 140a:升降單元 142:滑架 144:抵接板 150:檢查部 160:清洗單元 170:第一親水化處理部 170a、180a:電漿裝置 170b、180b:液滴噴霧裝置 170c:反應性離子蝕刻電漿裝置 171a、181a:超音波液滴發生器 171b；181b:液滴噴霧噴嘴 172:主體 172a:傳送通道 172b:開口 174:氣體供給部 176:RF電源施加部 176a:電極 176b:RF電源供給部 178:絕緣體 178a:感測部 178b:控制部 180:第二親水化處理部 180c:升降部 182:移動單元 190:對準檢查部 200:軌道 210:傳送裝置 200、241、251:電漿裝置 220:導軌 221:第一電漿裝置 221a、222a:電漿尖端 222:第二電漿裝置 222b、241b、251b:液滴噴霧裝置 223:下部主體 224:第二驅動部 225:上部主體 226:第一驅動部 227:移動主體 228:傳送軌道 240、250:第二親水化處理部 241a、251a:電漿尖端 242、252:主體 243、253:升降驅動部 244、254:移動主體 245、255:傳送軌道 S10~S40:步驟 D:晶片 G:間隔 P:電漿區域 P1、P3:區間 P2:電漿處理區間 P21:電漿開始位置 P22:電漿結束位置 R:OH自由基 T:厚度 W:半導體晶片 BA:接合區域 BL:接合介面 DL:液膜 DP:傳送路徑 DR:微細液滴 PS1:親水面 PS2:親水表面 MW:基板1: Main chip 2, 3, 3a: TSV chip 3b: Bonding film 3c: solder bump 4: joint head 12, 18, 22, 28: insulating film 14, 24: Silicon substrate 16, 26: Through electrode 100: Wafer bonding device 110: Support unit 120: Joining table 122: Rail 130: Frame 132: Transport Track 134: Support 136: Channel 140: joint head 140a: Lifting unit 142: Slide 144: Butt Plate 150: Inspection Department 160: cleaning unit 170: The first hydrophilization treatment section 170a, 180a: Plasma device 170b, 180b: droplet spray device 170c: Reactive ion etching plasma device 171a, 181a: ultrasonic droplet generator 171b; 181b: droplet spray nozzle 172: Subject 172a: Transmission channel 172b: opening 174: Gas Supply Department 176: RF power application part 176a: Electrode 176b: RF power supply unit 178: Insulator 178a: Sensing part 178b: Control Department 180: The second hydrophilization treatment part 180c: Lifting part 182: mobile unit 190: Alignment inspection department 200: track 210: Conveyor 200, 241, 251: Plasma device 220: Rail 221: First Plasma Device 221a, 222a: plasma tip 222: Second Plasma Device 222b, 241b, 251b: droplet spray device 223: Lower body 224: Second Drive 225: Upper body 226: First Drive 227: Moving Subject 228: Transport Track 240, 250: The second hydrophilization treatment part 241a, 251a: plasma tip 242, 252: main body 243, 253: Lifting drive unit 244, 254: Moving Subject 245, 255: Transport track S10~S40: steps D: chip G: interval P: Plasma area P1, P3: interval P2: Plasma processing interval P21: Plasma start position P22: Plasma end position R: OH radical T: thickness W: semiconductor wafer BA: Joint area BL: Bonding interface DL: Liquid film DP: Transmission path DR: Fine droplets PS1: Hydrophilic surface PS2: Hydrophilic surface MW: substrate

圖1至圖3是表示先前技術的晶片接合工藝的圖。1 to 3 are diagrams showing the wafer bonding process of the prior art.

圖4是本發明的實施例所涉及的晶片接合方法的流程圖。Fig. 4 is a flowchart of a wafer bonding method according to an embodiment of the present invention.

圖5是示意性地表示本發明的實施例所涉及的晶片接合裝置的側視圖。Fig. 5 is a side view schematically showing the wafer bonding apparatus according to the embodiment of the present invention.

圖6是示意性地表示本發明的實施例所涉及的晶片接合裝置的俯視圖。Fig. 6 is a plan view schematically showing a wafer bonding apparatus according to an embodiment of the present invention.

圖7是示意性地表示構造本發明的實施例所涉及的晶片接合裝置的支撐單元和第一親水化處理部及接合台的排列的俯視圖。FIG. 7 is a plan view schematically showing the arrangement of the support unit, the first hydrophilization treatment portion, and the bonding stage constituting the wafer bonding apparatus according to the embodiment of the present invention.

圖8是示意性地表示構造本發明的實施例所涉及的晶片接合裝置的第一親水化處理部的立體圖。FIG. 8 is a perspective view schematically showing a first hydrophilization treatment section configuring the wafer bonding device according to the embodiment of the present invention.

圖9是示意性地表示構造本發明的實施例所涉及的晶片接合裝置的大氣壓電漿裝置的剖視圖。FIG. 9 is a cross-sectional view schematically showing an atmospheric pressure piezoelectric slurry device that constructs the wafer bonding device according to the embodiment of the present invention.

圖10是表示構造本發明的實施例所涉及的晶片接合裝置的第一親水化處理部的操作及作用的圖。FIG. 10 is a diagram showing the operation and function of the first hydrophilization treatment section configuring the wafer bonding apparatus according to the embodiment of the present invention.

圖11是用於說明構造本發明的實施例所涉及的晶片接合裝置的電漿裝置的操作的圖。FIG. 11 is a diagram for explaining the operation of the plasma apparatus constructing the wafer bonding apparatus according to the embodiment of the present invention.

圖12至圖15是用於說明構造本發明的實施例所涉及的晶片接合裝置的第二電漿處理部的操作的圖。12 to 15 are diagrams for explaining the operation of the second plasma processing unit configuring the wafer bonding apparatus according to the embodiment of the present invention.

圖16是舉例說明根據本發明的實施例在基板上預接合多個晶片的圖。FIG. 16 is a diagram illustrating pre-bonding a plurality of wafers on a substrate according to an embodiment of the present invention.

圖17至圖21是用於說明本發明的實施例所涉及的晶片接合方法的示意圖。17 to 21 are schematic diagrams for explaining the wafer bonding method according to the embodiment of the present invention.

圖22是本發明的另一實施例所涉及的晶片接合裝置的示意性側視圖。Fig. 22 is a schematic side view of a wafer bonding apparatus according to another embodiment of the present invention.

圖23是用於說明圖22的實施例所涉及的晶片接合裝置的操作的圖。FIG. 23 is a diagram for explaining the operation of the wafer bonding apparatus according to the embodiment of FIG. 22.

圖24是本發明的又一實施例所涉及的晶片接合裝置的示意性側視圖。24 is a schematic side view of a wafer bonding apparatus according to another embodiment of the present invention.

圖25是表示構造本發明的又一實施例所涉及的晶片接合裝置的第二親水化處理部的圖。FIG. 25 is a diagram showing a second hydrophilization treatment section configuring a wafer bonding apparatus according to another embodiment of the present invention.

圖26是表示圖25所示的第二親水化處理部的操作的圖。Fig. 26 is a diagram showing the operation of the second hydrophilization treatment section shown in Fig. 25.

圖27是構造本發明的又一實施例所涉及的晶片接合裝置的第二親水化處理部的側視圖。Fig. 27 is a side view of a second hydrophilization treatment section configuring a wafer bonding apparatus according to another embodiment of the present invention.

圖28及圖29是表示圖27的實施例所涉及的第二親水化處理部的操作的圖。FIGS. 28 and 29 are diagrams showing the operation of the second hydrophilization treatment unit according to the embodiment of FIG. 27.

圖30是構造本發明的又一實施例所涉及的晶片接合裝置的第二親水化處理部的側視圖。Fig. 30 is a side view of a second hydrophilization treatment section configuring a wafer bonding apparatus according to another embodiment of the present invention.

圖31是表示圖30的實施例所涉及的第二親水化處理部的操作的圖。Fig. 31 is a diagram showing the operation of the second hydrophilization treatment unit according to the embodiment of Fig. 30.

170:第一親水化處理部 170: The first hydrophilization treatment section

170a:電漿裝置 170a: Plasma device

170b:液滴噴霧裝置 170b: droplet spray device

171a:超音波液滴發生器 171a: Ultrasonic droplet generator

171b:液滴噴霧噴嘴 171b: droplet spray nozzle

172:主體 172: Subject

P:電漿區域 P: Plasma area

R:OH自由基 R: OH radical

DR:微細液滴 DR: Fine droplets

Claims (18)

一種用於將接合對象接合到基板上的接合方法，包括以下步驟：對待接合所述接合對象的所述基板上的接合區域和待接合到所述基板上的所述接合對象的接合面進行親水化；藉由所述接合對象的經親水化的接合面與所述基板的經親水化的接合區域之間的接合力將所述接合對象預接合到所述基板上；其中，在進行親水化的步驟中，藉由電漿裝置在所述接合面或所述接合區域形成電漿區域，同時藉由液滴噴霧裝置向所述電漿區域噴射液滴而對所述接合面或所述接合區域進行親水化，且其中，在進行親水化的步驟中，藉由向利用介質阻擋放電方式形成的所述電漿區域供給微細液滴而在所述基板的接合區域或所述晶片的接合面上生成液體電漿。 A bonding method for bonding a bonding object to a substrate, comprising the following steps: the bonding area on the substrate to be bonded to the bonding object and the bonding surface of the bonding object to be bonded to the substrate are hydrophilic The bonding object is pre-bonded to the substrate by the bonding force between the hydrophilized bonding surface of the bonding object and the hydrophilized bonding area of the substrate; wherein, the hydrophilization is performed In the step, a plasma area is formed on the bonding surface or the bonding area by a plasma device, and droplets are sprayed to the plasma area by a droplet spray device to spray droplets on the bonding surface or the bonding area. The area is hydrophilized, and wherein, in the step of hydrophilizing, by supplying fine droplets to the plasma area formed by the dielectric barrier discharge method, the bonding area of the substrate or the bonding surface of the wafer Liquid plasma is generated on it. 如請求項1所述之接合方法，其中，在進行親水化的步驟中，所述液滴噴霧裝置藉由超音波液滴噴霧器向所述電漿區域噴射所述微細液滴。 The joining method according to claim 1, wherein, in the step of performing hydrophilization, the droplet spraying device sprays the fine droplets to the plasma region by an ultrasonic droplet sprayer. 如請求項1所述之接合方法，其中，在進行親水化的步驟中，所述液滴噴霧裝置向所述電漿裝置與所述基板之間的空間或所述電漿裝置與所述接合對象之間的空間噴射所述液滴。 The bonding method according to claim 1, wherein, in the step of performing hydrophilization, the droplet spray device is directed toward the space between the plasma device and the substrate or the plasma device and the bonding The space between the objects ejects the droplets. 如請求項1所述之接合方法，其中，在進行親水化的步驟中，所述液滴噴霧裝置向與所述基板的接合區域或所述接合對象的接合面並排的方向噴射所述液滴。 The bonding method according to claim 1, wherein in the step of performing hydrophilization, the droplet spraying device sprays the droplets in a direction parallel to the bonding area of the substrate or the bonding surface of the bonding target . 如請求項1所述之接合方法，其中，在進行親水化的步驟中， 所述液滴噴霧裝置藉由對純水施加超音波而生成所述微細液滴，並且將所述微細液滴噴射到所述電漿區域而從所述微細液滴中生成OH自由基，並且在所述基板上的接合區域或所述接合對象的接合面形成用於預接合所述基板和所述接合對象的液膜。 The joining method according to claim 1, wherein, in the step of performing hydrophilization, The droplet spraying device generates the fine droplets by applying ultrasonic waves to pure water, and sprays the fine droplets to the plasma region to generate OH radicals from the fine droplets, and A liquid film for pre-bonding the substrate and the bonding target is formed on the bonding area on the substrate or the bonding surface of the bonding target. 如請求項1所述之接合方法，其還包括以下步驟：藉由接合頭部拾取支撐在支撐單元上的所述接合對象並將所述接合對象傳送到支撐在接合台上的所述基板的上部區域，其中，進行親水化的步驟包括以下步驟：藉由所述電漿裝置在所述支撐單元與所述接合台之間的所述接合對象的傳送路徑上形成所述電漿區域；藉由所述液滴噴霧裝置向所述電漿區域噴射所述微細液滴；以及在使所述接合對象在噴射有所述微細液滴的所述電漿區域中移動的同時對所述接合對象的接合面進行親水化。 The bonding method according to claim 1, further comprising the steps of: picking up the bonding object supported on the supporting unit by the bonding head and transferring the bonding object to the substrate supported on the bonding table The upper region, wherein the step of hydrophilizing includes the following steps: forming the plasma region on the transfer path of the bonding object between the support unit and the bonding stage by the plasma device; Spraying the fine droplets to the plasma region by the droplet spraying device; and moving the bonding target in the plasma region where the fine droplets are sprayed while facing the bonding target The joint surface is hydrophilized. 如請求項1所述之接合方法，其中，進行親水化的步驟包括以下步驟：藉由第一親水化處理部在所述基板上的接合區域形成電漿區域的同時噴射所述微細液滴而對所述基板上的接合區域進行親水化；以及藉由第二親水化處理部在所述接合對象的接合面形成電漿區域的同時噴射所述微細液滴而對所述接合對象的接合面進行親水化。 The bonding method according to claim 1, wherein the step of performing hydrophilization includes the step of spraying the fine droplets while forming a plasma area on the bonding area on the substrate by the first hydrophilization treatment section Hydrophilizing the bonding area on the substrate; and spraying the fine droplets on the bonding surface of the bonding object by the second hydrophilization treatment part forming a plasma area on the bonding surface of the bonding object Carry out hydrophilization. 如請求項1所述之接合方法，其中，進行親水化的步驟包括以下步驟：藉由包括所述電漿裝置和所述液滴噴霧裝置的親水化處理 部在所述基板上的接合區域形成電漿區域的同時噴射所述微細液滴而對所述基板上的接合區域進行親水化；以及在對所述基板上的接合區域進行親水化之前或之後，藉由所述親水化處理部在所述接合對象的接合面形成電漿區域的同時噴射所述微細液滴而對所述接合對象的接合面進行親水化。 The bonding method according to claim 1, wherein the step of performing hydrophilization includes the following step: by hydrophilization treatment including the plasma device and the droplet spray device When forming a plasma region on the bonding area on the substrate, spraying the fine droplets to hydrophilize the bonding area on the substrate; and before or after hydrophilizing the bonding area on the substrate The hydrophilization treatment section sprays the fine droplets while forming a plasma region on the joining surface of the joining object to hydrophilize the joining surface of the joining object. 如請求項1所述之接合方法，其還包括以下步驟：在所述基板和所述接合對象預接合的狀態下進行熱處理以將所述接合對象後接合到所述基板上。 The bonding method according to claim 1, further comprising the step of performing heat treatment in a state where the substrate and the bonding target are pre-bonded to bond the bonding target to the substrate. 一種用於將接合對象接合到基板上的接合裝置，包括：接合頭部，其用於拾取所述接合對象並將所述接合對象傳送到所述基板上的接合區域；以及親水化處理部，其用於對所述基板上的接合區域及所述接合對象的接合面進行親水化，從而將所述接合對象預接合到所述基板上；其中，所述親水化處理部包括：電漿裝置，其用於在所述接合對象的接合面或所述基板上的接合區域形成電漿區域；以及液滴噴霧裝置，其用於向所述電漿區域噴射液滴，且其中，所述親水化處理部利用介質阻擋放電方式形成所述電漿區域並向所述電漿區域供給微細液滴而在所述基板的接合區域或所述晶片的接合面上生成液體電漿。 A bonding device for bonding a bonding target to a substrate includes: a bonding head for picking up the bonding target and transferring the bonding target to a bonding area on the substrate; and a hydrophilization treatment part, It is used to hydrophilize the bonding area on the substrate and the bonding surface of the bonding object, so as to pre-bond the bonding object to the substrate; wherein the hydrophilization treatment part includes: a plasma device , Which is used to form a plasma region on the bonding surface of the bonding object or the bonding region on the substrate; and a droplet spray device for spraying droplets to the plasma region, and wherein the hydrophilic The chemical treatment unit forms the plasma region by a dielectric barrier discharge method and supplies fine droplets to the plasma region to generate liquid plasma on the bonding region of the substrate or the bonding surface of the wafer. 如請求項10所述之接合裝置，其中，所述液滴噴霧裝置包括超音波液滴噴霧器，所述超音波液滴噴霧器用於向所述電漿區域噴射所述微細液滴。 The joining device according to claim 10, wherein the droplet spraying device includes an ultrasonic droplet sprayer, and the ultrasonic droplet sprayer is configured to spray the fine droplets to the plasma region. 如請求項10所述之接合裝置，其中，所述液滴噴霧裝置向所 述電漿裝置與所述基板之間的空間或所述電漿裝置與所述接合對象之間的空間噴射所述液滴，並且向與所述基板的接合區域或所述接合對象的接合面並排的方向噴射所述液滴。 The joining device according to claim 10, wherein the droplet spraying device The space between the plasma device and the substrate or the space between the plasma device and the bonding object sprays the droplets, and the liquid drop is sprayed toward the bonding area with the substrate or the bonding surface of the bonding object The droplets are ejected side by side. 如請求項10所述之接合裝置，其中，所述液滴噴霧裝置藉由對純水施加超音波而生成所述微細液滴，並且將所述微細液滴噴射到所述電漿區域而從所述微細液滴中生成OH自由基，並且在所述基板上的接合區域或所述接合對象的接合面形成用於預接合所述基板和所述接合對象的液膜。 The bonding device according to claim 10, wherein the droplet spraying device generates the fine droplets by applying ultrasonic waves to pure water, and sprays the fine droplets to the plasma region to remove OH radicals are generated in the fine droplets, and a liquid film for pre-bonding the substrate and the bonding target is formed on the bonding area on the substrate or the bonding surface of the bonding target. 如請求項10所述之接合裝置，其中，所述接合頭部被設置為在支撐所述接合對象的支撐單元與支撐所述基板的接合台之間能夠移動，所述親水化處理部設置在所述支撐單元與所述接合台之間的所述接合對象的傳送路徑上。 The bonding device according to claim 10, wherein the bonding head is provided to be movable between a supporting unit supporting the bonding object and a bonding table supporting the substrate, and the hydrophilization treatment part is provided at On the conveying path of the joining object between the supporting unit and the joining table. 如請求項10所述之接合裝置，其中，所述親水化處理部包括：第一親水化處理部，其藉由在所述基板上的接合區域形成電漿區域的同時噴射所述微細液滴而對所述基板上的接合區域進行親水化；以及第二親水化處理部，其藉由在所述接合對象的接合面形成電漿區域的同時噴射所述微細液滴而對所述接合對象的接合面進行親水化。 The bonding device according to claim 10, wherein the hydrophilization treatment section includes: a first hydrophilization treatment section that sprays the fine droplets while forming a plasma region on the bonding region on the substrate And hydrophilizing the bonding area on the substrate; and a second hydrophilization treatment portion that sprays the fine droplets while forming a plasma area on the bonding surface of the bonding object to treat the bonding object The joint surface is hydrophilized. 如請求項10所述之接合裝置，其中，所述親水化處理部被構造為對所述基板上的接合區域及所述接合對象的接合面連續進行親水化。 The bonding device according to claim 10, wherein the hydrophilization treatment section is configured to continuously hydrophilize the bonding area on the substrate and the bonding surface of the bonding target. 如請求項16所述之接合裝置，其中，所述電漿裝置包括：電漿尖端，其用於向所述基板上的接合區域局部地供給電漿；驅 動部，其用於使所述電漿尖端沿水平方向及上下方向移動；以及旋轉部，其用於使所述電漿尖端沿上下方向旋轉。 The bonding device according to claim 16, wherein the plasma device includes: a plasma tip for locally supplying plasma to the bonding area on the substrate; A moving part for moving the plasma tip in a horizontal direction and a vertical direction; and a rotating part for rotating the plasma tip in a vertical direction. 如請求項10所述之接合裝置，其還包括：熱處理單元，其在所述基板和所述接合對象預接合的狀態下進行熱處理以將所述接合對象後接合到所述基板上。 The bonding device according to claim 10, further comprising: a heat treatment unit that performs heat treatment in a state where the substrate and the bonding target are pre-bonded to bond the bonding target to the substrate.
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