201242043 六、發明說明： 【發明所屬之技術領域】 本發明係關於網版及太陽能電池之製造方法，尤其是關 於太陽能電池之電極之形成方法。 【先前技術】 將太陽能直接轉換為電能之太陽能電池，近年來，尤其 自地球環境問題之觀點出發，作為下—代之能源之期望急 速高漲。作為太陽能電池，雖有包含化合物半導體材料之 太陽能電池或包含有機材料之太陽能電池等各種太陽能電 池目前，主流之太陽能電池為包含石夕結晶材料之太陽 能電池。 /圖8〜圖1〇顯示先前之太陽能電池】〇1之構成之一例。㈣ 係先前之太陽能電池101之剖面圖，且係圖9及圖1〇中所示 之則.線之剖面圖。圖9係自受光面側觀察先前之太 陽能電池UH時之俯視圖。圖1〇係自與受光面側為相反側 之背面側觀察先前之太陽能電池1〇1時之俯視圖。另，本 詳細說明書中，由石夕基板而言亦同，將入射光側記载為受 光面側，將與受光面相反之側記載為背面側。 圖8〜圖10中所示之太陽能電池101中，ρ型石夕基板（半導 體基板）1G2之受光面側形成有η型擴散層1G3，ρ型石夕基板 ⑽之受光面上分別形成有氮切膜等之反射防止膜104及 文光面側銀電極1 1 0。 受光面側銀電極110如圖9所示，包含集電極105與子拇 °電極109冑8中顯不之受光面側銀電極為集電極 162473.doc 201242043 105 ^此處，子柵極電極係用以收集產生之載子之電極。 集電極係進一步集中以子栅極電極收集之載子，且係連接 於在連接太陽能電池彼此時使用之互連器上之電極。 於Ρ型矽基板102之背面側，形成有為对層之BSF(Back Surface Field:背面電場）層1〇6。且，p型矽基板ι〇2之背 面上分別形成有氧化鋁電極107及背面側銀電極1〇8。又， 為提高太陽能電池之轉換效率，亦存在於？型矽基板ι〇2之 受光面形成（未圖禾）稱為紋理構造之凹凸形狀之情形。 圖8〜圖10中所示之太陽能電池1〇1中，纟光面側銀電極 Π〇形成於P型矽基板102之受光面上，故受光面側銀電極 11 0中發生光之反射及吸收。因此，入射光之強度減小程 度係僅入射至與P型矽基板102之受光面之受光面侧銀電極 110之面積相當之區域之光之強度程度。此處，集電極1〇5 需要與互連器之寬度相同程度之寬度。因A，為防止入射 光之減少，正在研究縮小子柵極電極1 之寬度。 圖Π係專利文獻丨中所示之太陽能電池之立體圖。專利 文獻丨（曰本特開乎6·283736號公報）中記載之太陽能電池 中，於ρ型半導體基板3〇1之上表面側形成有η型半導體層 302，於η型半導體層302之上表面形成有受光面電極3〇4及 表面主電極305 ^ 型半導體基板3〇1之下表面側形成有 Ρ-型半導體層303，於ρ-型半導體層3〇3之下表面形成有背 面側電極306 ^專利文獻1中記載有受光面電極3〇4係連接 於表面主電極305，及受光面電極3〇4係以剖面積隨著自該 受光面電極304之前端接近表面主電極3〇5變大之方式形 162473.doc 201242043 成。又，專利文獻1中亦記載有根據光蝕微影法及酸蝕 刻，去除η型半導體層302之上表面中形成有受光面電極 304之區域内之反射防止膜及氧化膜後，根據剝離法，在η 型半導體層3 02之上表面上形成受光面電極3〇4。 另一方面，大量生產太陽能電池時，作為有效形成受光 面側銀電極之方法，使用作為導電膏之銀膏之網版印刷法 眾所周知。此處，就網版印刷法，使用圖12進行說明。所 謂網版印刷法，即在形成有特定之圖案之網版2〇1上設置 膏狀之材料202，且利用刮漿刀2〇3將膏狀之材料2〇2印刷 於基板205之上表面者。此處，基板2〇5係保持於平坦之平 臺204上。網版上，例如設置有網版紗等。於用以形成受 光面側銀電極之遮罩構件，使用包含乳劑之乳劑部或金属 膜等。 圖13(a)〜(b)中顯示用以用網版印刷法印刷銀膏之網版， 圖13⑷係自上方觀察網版術之俯視圖，圖⑽）係圖i3(a) 所示之則Β·ΧΙΙΙΒ線之剖自圖。網版4〇1具備網版紗4〇2與 乳劑部40h碎基板404如圖13(b)所示，位於乳劑部4〇3之 下方。銀膏係設置於網版紗術上，且利用職刀通過網 版紗402。此處，乳劑部403具有固定之厚度们，且未形成 於與電極圖案對應之網版紗之下方。藉此，銀膏（厚度们） 印刷於碎基板404之上表面上。藉由網版印刷法印刷銀膏 後進行熱處理’藉此形成受光面側銀電極。 先前技術文獻 專利文獻 162473.doc 201242043 專利文獻1 .曰本特開平6-283736號公報（平成6年10月7曰 公開） 【發明内容】 發明所欲解決之問題 爲了用網版印刷法形成專利文獻1中記載之太陽能電池 具備之受光面侧銀電極，有必要以電極寬度隨著自集電極 接近子柵極電極之前端變窄之方式形成子柵極電極。然 而，在電極寬度較窄之部位，存在電極不按圖案印刷，出 現印刷飛白等之不良狀況之情形。 本發明係鑒於上述問題而完成者，其目的在於提供一種 即使在使用網版印刷法以電極寬度隨著接近前端而變窄之 方式形成電極之情形下，仍可防止印刷後之電極中產生飛 白等之情形之網版。 解決問題之技術手段 本發明之網版係在形成太陽能電池時使用，且具備具有 與電極對應之開口部之遮罩構件。開口部係以線寬隨著朝 向特定之方向而變窄之方式形成’遮罩構件係以厚度隨著 朝向特定之方向而變薄之方式形成。此處，所謂「特定之 方向」係電極或與電極對應而形成於遮罩構件上之開口 :之寬「度自較寬部位朝向較窄部位之方向。後述之實施形 態中’「特定之方向」係、朝向電極或與電極對應而形成於 遮罩構件上之開口部之前端之方向，且在電極具有集電極 與自集電極延伸之子柵極電極之情形下，朝向子栅極電極 或與子栅極電極對應而形成於遮罩構件上之開口部之前端 I62473.doc 201242043 之方向。 遮罩構件亦可包含乳劑’或亦可為鍍敷箔，或亦可為金 屬板6 本發明之第1太陽能電池之製造方法，包含於半導體基 板形成電極之步驟。形成電極之步驟包含使用網版將導電 膏塗佈於半導體基板之步驟，及熱處理塗佈有導電膏之半 導體基板之步驟。網版具備具有與電極對應之開口部之遮 罩構件，帛口部係以線寬隨著朝向特定之方向而變窄之方 式形成，料構件仙厚度隨著朝向特定之方向而變薄之 方式形成。 +發明之第1太陽能電 %低且丹男杲 電極與自集電極延伸之子栅極電極。特定之方向宜為朝向 子柵極電極之前端之方向〇 〇 本發明之第2太陽能電池之製造方法包含於半導體基板 上形成電極之步驟。形成電極之步驟具備使用網版將 膏塗佈於半導體基板之步驟，及減理塗佈有導電膏之半 =體基板之步驟。電極係以線寬隨著朝向特定之方向而變 乍且厚度變薄之方式形成。 法中，電極宜具有集 特定之方向宜為朝向 本發明之第2太陽能電池之製造方 電極與自極延伸之子柵極電極。 子柵極電極之前端之方向。 導電膏宜為銀膏。 電極宜形成於半導體基板之受光面上 發明之效果 •62473.doc 201242043 根據本發明’即使在使用網版印刷法以電極寬度隨著接 近前端而變窄之方式形成電極之情形下，仍可防止於印刷 後之電極產生飛白等。 【實施方式】 以下，就本發明之網版及太陽能電池之製造方法，使用 圖面進行說明。另，本發明之圖面中，同一之參照符號為 表示同一部份或相當部份者。又，長度、寬度、厚度、深 度等之尺寸關係因圖面之明瞭化與簡略化而適宜更改，而 非表示實際之尺寸關係者。 圖1係自受光面侧觀察本發明之太陽能電池之 視圖@1中所示之太陽能電池i中’於受光面上作為受光 面側銀電極4而形成有集電極2與子柵極電極3。子柵極電 極3自集電極2延#，且隨著自集電極2側向太陽能電池】之 外側接近，其電極寬度形成為連續變窄之錐形形狀。圖^ 中所不之太陽能電池i之剖面圖及自背面側觀察之俯視圖 分別與圖8及圖10相同。即’本發明之太陽能電池中於 半導體基板之爻光面側形成有第丨導電型半導體層，第1導 型半導體層之文光面上形成有反射防止膜及受光面側銀 電極4 ☆半導體基板之背面側’藉由形成鋁電極而形成 有第2導電型半導體層。且，於半導體基板之背面，形成 有背面側銀電極。 /下，顯示本發明之太陽能電池之製造方法之一例。 。係按步驟順序顯示本發明之太陽能電池之製造方法之 ^圖首先’在步驟S1中’藉由蝕刻P型矽基板，自p型, I62473.doc 201242043201242043 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for manufacturing a screen and a solar cell, and more particularly to a method for forming an electrode of a solar cell. [Prior Art] In recent years, in particular, from the viewpoint of global environmental problems, the demand for energy as a next generation has rapidly increased. As a solar cell, there are various solar cells including a solar cell containing a compound semiconductor material or a solar cell including an organic material. Currently, a mainstream solar cell is a solar cell including a stone crystal material. / Fig. 8 to Fig. 1A show an example of the configuration of the prior solar cell 〇1. (4) A cross-sectional view of the prior solar cell 101, and is a cross-sectional view of the line shown in Figs. 9 and 1B. Fig. 9 is a plan view showing the conventional solar battery UH as viewed from the light-receiving side. Fig. 1 is a plan view of the solar cell 1〇1 viewed from the back side opposite to the light-receiving side. In the present specification, the side of the incident light is described as the light receiving surface side, and the side opposite to the light receiving surface is referred to as the back side. In the solar cell 101 shown in FIG. 8 to FIG. 10, an n-type diffusion layer 1G3 is formed on the light-receiving surface side of the p-type substrate (semiconductor substrate) 1G2, and nitrogen is formed on the light-receiving surface of the p-type slab substrate (10). The anti-reflection film 104 such as a film and the silver-surface side silver electrode 1 10 are cut. As shown in FIG. 9 , the light-receiving side silver electrode 110 includes a collector electrode 105 and a light-receiving surface-side silver electrode which is a collector electrode 162473.doc 201242043 105 ^where, the sub-gate electrode system An electrode for collecting the generated carrier. The collector system further concentrates the carriers collected by the sub-gate electrodes and is connected to the electrodes on the interconnectors used when connecting the solar cells to each other. On the back side of the ruthenium-type ruthenium substrate 102, a BSF (Back Surface Field) layer 1 〇 6 is formed. Further, an alumina electrode 107 and a back side silver electrode 1〇8 are formed on the back surface of the p-type germanium substrate ι2, respectively. Also, in order to improve the conversion efficiency of solar cells, is it also present? The formation of the light-receiving surface of the type 矽 substrate 〇2 (not shown) is referred to as the uneven shape of the texture structure. In the solar cell 1〇1 shown in FIG. 8 to FIG. 10, the phosphor side silver electrode Π〇 is formed on the light receiving surface of the P-type germanium substrate 102, so that light reflection occurs in the light-receiving side silver electrode 110. absorb. Therefore, the intensity of the incident light is reduced to the extent of the light incident only in the region corresponding to the area of the light-receiving surface side silver electrode 110 of the light-receiving surface of the P-type germanium substrate 102. Here, the collector 1〇5 needs to have the same width as the width of the interconnector. In order to prevent the decrease of incident light due to A, the width of the sub-gate electrode 1 is being reduced. The figure is a perspective view of a solar cell shown in the patent document 。. In the solar cell described in the Japanese Patent Publication No. 6-283736, an n-type semiconductor layer 302 is formed on the upper surface side of the p-type semiconductor substrate 3〇1, and is formed on the n-type semiconductor layer 302. A light-emitting surface electrode 3〇4 and a surface main electrode 305 are formed on the lower surface side of the semiconductor substrate 3〇1, and a Ρ-type semiconductor layer 303 is formed on the lower surface side, and a back surface side is formed on the lower surface of the ρ-type semiconductor layer 3〇3. Electrode 306 ^ Patent Document 1 discloses that the light-receiving surface electrode 3〇4 is connected to the surface main electrode 305, and the light-receiving surface electrode 3〇4 has a sectional area that is close to the surface main electrode 3 from the front end of the light-receiving surface electrode 304. 5 becomes larger in the shape of 162473.doc 201242043 into. Further, Patent Document 1 discloses that the anti-reflection film and the oxide film in the region where the light-receiving surface electrode 304 is formed on the upper surface of the n-type semiconductor layer 302 are removed by photolithography and acid etching, and then the peeling method is performed. A light-receiving surface electrode 3〇4 is formed on the upper surface of the n-type semiconductor layer 302. On the other hand, in the case of mass production of a solar cell, a screen printing method using a silver paste as a conductive paste is known as a method of effectively forming a silver electrode on a light-receiving side. Here, the screen printing method will be described using FIG. In the screen printing method, a paste-like material 202 is provided on a screen 2〇1 in which a specific pattern is formed, and a paste-like material 2〇2 is printed on the upper surface of the substrate 205 by a doctor blade 2〇3. By. Here, the substrate 2〇5 is held on the flat stage 204. On the screen, for example, a screen yarn is provided. For the mask member for forming the silver electrode on the light-receiving side side, an emulsion portion containing a emulsion, a metal film or the like is used. Figure 13 (a) ~ (b) shows a screen for printing silver paste by screen printing, Figure 13 (4) is a top view of the screen from above, Figure (10)) is shown in Figure i3 (a) The Β·ΧΙΙΙΒ line is cut from the map. The screen 4〇1 is provided with the screen yarn 4〇2 and the emulsion portion 40h. The broken substrate 404 is located below the emulsion portion 4〇3 as shown in Fig. 13(b). The silver paste is placed on the screen yarn and passes through the screen yarn 402 using a job knife. Here, the emulsion portion 403 has a fixed thickness and is not formed under the screen yarn corresponding to the electrode pattern. Thereby, silver pastes (thickness) are printed on the upper surface of the broken substrate 404. The silver paste is printed by a screen printing method and then subjected to heat treatment, whereby a light-receiving side silver electrode is formed. CITATION LIST Patent Literature 162 473. doc 201242043 Patent Document 1 曰 特 特 6 6 - - 6 6 6 6 ( ( ( ( ( ( ( ( ( 6 6 6 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 为了 为了 为了 为了 为了 为了In the solar cell of the light-receiving surface side of the solar cell described in Document 1, it is necessary to form the sub-gate electrode so that the electrode width becomes narrower as the self-collecting electrode approaches the front end of the sub-gate electrode. However, in a portion where the electrode width is narrow, there is a case where the electrode is not printed in a pattern, and a problem such as printing whitening occurs. The present invention has been made in view of the above problems, and an object thereof is to provide a method for preventing the occurrence of whitening in an electrode after printing even in the case where an electrode is formed in such a manner that the electrode width is narrowed toward the front end by using a screen printing method. The screen version of the situation. Means for Solving the Problem The screen of the present invention is used when forming a solar cell, and is provided with a mask member having an opening corresponding to the electrode. The opening portion is formed such that the line width is narrowed toward a specific direction. The mask member is formed such that the thickness thereof becomes thinner toward a specific direction. Here, the "specific direction"-based electrode or the opening formed in the mask member corresponding to the electrode has a width "degree from a wide portion toward a narrow portion. In the embodiment described later, "the specific direction" a direction toward the front end of the opening portion of the mask member corresponding to the electrode or the electrode, and in the case where the electrode has the collector and the sub-gate electrode extending from the collector electrode, toward the sub-gate electrode or The sub-gate electrode is formed in the direction of the front end of the opening portion of the mask member in the direction of I62473.doc 201242043. The mask member may also contain an emulsion 'or a plated foil, or may be a metal plate 6. The method for producing a first solar cell of the present invention includes the step of forming an electrode on a semiconductor substrate. The step of forming the electrode includes the steps of applying a conductive paste to the semiconductor substrate using a screen, and heat-treating the semiconductor substrate coated with the conductive paste. The screen plate is provided with a mask member having an opening corresponding to the electrode, and the mouth portion is formed such that the line width is narrowed toward a specific direction, and the thickness of the material member is thinned toward a specific direction. form. + The first solar cell of the invention has a low % and a sub-gate electrode extending from the electrode and the self-collecting electrode. The specific direction is preferably the direction toward the front end of the sub-gate electrode. 制造 The second solar cell manufacturing method of the present invention includes the step of forming an electrode on the semiconductor substrate. The step of forming the electrode includes a step of applying a paste to the semiconductor substrate using a screen, and a step of reducing the half of the body substrate coated with the conductive paste. The electrode is formed in such a manner that the line width changes toward a specific direction and the thickness becomes thin. In the method, it is preferable that the electrode has a specific direction to be oriented toward the manufacturing electrode of the second solar cell of the present invention and the sub-gate electrode extending from the pole. The direction of the front end of the sub-gate electrode. The conductive paste should be a silver paste. The effect that the electrode is preferably formed on the light-receiving surface of the semiconductor substrate. 62473.doc 201242043 According to the present invention, it is possible to prevent the electrode from being formed by using a screen printing method in such a manner that the electrode width is narrowed as it approaches the front end. The electrode after printing produces whitening and the like. [Embodiment] Hereinafter, a screen of the present invention and a method of manufacturing a solar cell will be described with reference to the drawings. In the drawings, the same reference numerals are used to refer to the same or equivalent parts. Further, the dimensional relationship of length, width, thickness, depth, and the like is appropriately changed due to the simplification and simplification of the drawing, and does not indicate the actual dimensional relationship. In the solar cell i shown in the view of the solar cell of the present invention, the collector electrode 2 and the sub-gate electrode 3 are formed on the light-receiving surface as the light-receiving side silver electrode 4 from the light-receiving surface side. The sub-gate electrode 3 is extended from the collector electrode 2, and as the self-collector electrode 2 is laterally approached to the outside of the solar cell, the electrode width thereof is formed into a tapered shape which is continuously narrowed. The cross-sectional view of the solar cell i and the top view viewed from the back side in Fig. 2 are the same as those in Figs. 8 and 10, respectively. In the solar cell of the present invention, the second conductivity type semiconductor layer is formed on the phosphor side of the semiconductor substrate, and the antireflection film and the light receiving surface side silver electrode 4 are formed on the surface of the first conductive layer. On the back side of the substrate, a second conductive semiconductor layer is formed by forming an aluminum electrode. Further, a silver electrode on the back side is formed on the back surface of the semiconductor substrate. An example of a method of manufacturing the solar cell of the present invention is shown. . The method for manufacturing the solar cell of the present invention is shown in the order of steps. First, 'in step S1' by etching the P-type germanium substrate, from p-type, I62473.doc 201242043
純去除損壞層。其次，在步㈣中，藉由碟之熱擴散， 為场能電池1之受光面之面（以下稱為「P型發基板之 受光面」）側形成〇型擴散層，藉由電榮CVD法，在n型半 導體層之上表面上形成料反射防止膜之氮切膜。A 次’在步驟S3中，藉由網版印刷法將銀膏印刷於為？型石夕 基板之背面之面（町稱為「p财基板之背面」）之一部份 上並使其乾燥。其次’在步驟S4中’藉由網版印刷法將鋁 膏印刷於P型石夕基板之背面之幾乎全面上並使其乾燥。此 時，以銘膏與銀膏部份重疊之方式，將該銘膏印刷於p型 矽基板之背面。其次，在步驟S5tf?，以圖2中所示之圖案 之受光面側銀電極形成於反射防止膜上之方式，藉 印刷法印刷銀膏並使其乾燥。其次，在步祕中，進行熱 處理。藉此，形成有受光面側銀電極、背面側銀電極、鋁 電極及BSF層。此時’步驟S5中形成圖案之銀膏刺穿反射 防止膜與η型擴散層接觸，藉此，形成受光面側銀電極。 如此’製作圖1中所示之太陽能電池1。 <實施形態1> 實施形態1中，顯示用以形成圖2之步驟S5之受光面側銀 電極之銀膏之印刷步驟及乾燥步驟。 圖3(a)係自上方觀察用以用網版印刷法印刷銀膏之網版 (網版）21之俯視圖。圖3(b)係圖3(a)中所示2Ιπβιιιβ線之 面圖’满版21具備網版紗22與乳劑部23。乳劑部23作為 遮罩構件發揮功能，且設置於網版紗22之下方，具有與集 電極2對應之電極圖案（集電極圖案）及與子柵極電極3對應 162473.doc 201242043 之電極圖案（子柵極電極圖案）^具體而言，於乳劑部23 , 形成有與集電極2之平面形狀形狀相同之開口部（相當於集 電極圖案）及與子柵極電極3之平面形狀形狀相同之開口部 (相當於子柵極電極圖案）❶銀膏係設置於網版紗22之上 方，並藉由到漿刀，通過網版紗22 ,進而通過形成於乳劑 23之開口部，且印刷於p型石夕基板24(p型石夕基板配置 於較乳劑部23更下方）之上表面。 此處’有人進行用以印刷子柵極電極3之研究，該子柵 極電極3係包含電極寬度隨著自集電極2接近子柵極電極3 之前端變窄之錐形形狀。另，位於集電極2與集電極2之間 之子柵極電極3之寬度及厚度固定。配合子栅極電極3之錐 形形狀，使形成於網版21之子柵極電極圖案之形狀為圖案 寬度隨著接近該子柵極電極圖案之前端變窄之錐形形狀， 進而，使乳劑部23之形狀為厚度隨著接近子柵極電極圖案 之前端連續變薄之錐形形狀。如此之錐形形狀，例如藉由 用1 〇〇〇號之砂紙複數次打磨乳劑部23而形成。 且’將子柵極電極圖案之長度方向中心附近之乳劑部23 之厚度及集電極圖案附近之乳劑部23之厚度設為di，將子 柵極電極圖案之前端之乳劑部23之厚度設為d2，更改以及 d2形成受光面銀電極，評價得到之太陽能電池1。 以下’顯示實施例1〜2及比較例1中之網版21之子栅極電 極圖案之長度方向中心附近之電極寬度、網版2丨之子柵極 電極圖案之前端之電極寬度、dl、d2。另，比較例1中， 在子栅極電極圖案之長度方向上使乳劑部23之厚度固定。 162473.doc •10· 201242043 實施例1 :中心：電極寬/乳劑厚（dl)—100 μηι/20 μηι 前踹：電極寬/乳劑厚（d2) —70 μηι/8 μηι 實施例2 :中心：電極寬/乳劑厚（dl)—100 μηι/20 μηι 前端·電極寬/乳劑厚（d2)—60 μιη/8 μιη 比較例1 :中心：電極寬/乳劑厚（dl)—1〇〇 μπι/2〇 μηι 前端：電極寬/乳劑厚（d2)—70 μιη/20 μπι 根據上述條件形成受光面侧銀電極，根據圖2中所示之 製作/;v程製作1 1中所示之太陽能電池1。1，評價得到之 太陽能電池丨。在表1中顯示其結果。 162473.doc 201242043 [表i] 膏之 使用量 CN Os Ο 1 〇 特性 1_ ε pH 1.021 1.024 1.000 [X| 1.018 1.017 1.000 ο 1.003 1.003 1.000 1.000 1.004 1.000 前端之 印刷後 之圖案 狀態 < < CQ 焙燒後 子糖極電極 厚度 方向 形狀 錐形 錐形 Η 0 錐形 錐形 錐形 '\W 電極厚 [μηι] 〇 〇 1 1 電極寬 [μιη] yr\ oo 1 電極厚 [μιη] 1 電極寬 [μηι] % 1 網版設計值 子柵極電極 前端 乳劑厚 [μηι] oo 〇〇 電極寬 [μιη] Ο 〇 4- 乳劑厚 [μηι] 宕 電極寬 [μηι] ο 〇 〇 實施例 1 實施例 2 比較例 1 162473.doc 12 201242043 表1中，中心意味著形成於網版21之子栅極電極圖案之 長度方向中心附近，前端意味著形成於網版2 1之子柵極電 極圖案之前端。乳劑厚意味著乳劑部23之厚度。 表1中，Jsc係短路電流密度，Voc係開放電壓，ff係曲 綫因子，Pm係最大輸出。表1之Jsc值、Voc值、FF值、及 Pm值分別係相對比較例1之jsc值、v〇c值、ρρ值及pm值之 比率。又，表1之膏使用量亦係相對比較例1之膏使用量之 比率。再者’表1之前端之印刷後之圖案狀態係顯示子柵 極電極3之前端之印刷後之圖案狀態，表1之「a」意味著 子柵極電極3之前端之印刷後之圖案狀態良好，表i之 「B」意味著子柵極電極3之前端之印刷後之圖案產生飛 白。此處，表1之「B」表示銀膏雖進入至乳劑部23之厚度 方向中途，但因存在無法到達p型矽基板24之受光面之部 份’故印刷後之電極會產生局部飛白。 如表1所示，實施例丨〜2之任一者中，子柵極電極3皆形 成為與形成於網版21之子柵極電極圖案之形狀對應之形 狀具體而。，子柵極電極3之平面形狀係電極寬度隨著 接近子柵極電極3之前端變窄之錐形形狀。又，子柵極電 極3之厚度賴著接近子栅極電⑽之前端逐漸變薄（相當 於表1中「厚度方向形狀」為「錐形」）。 如表1所示’關於子柵極電榀 a 电極3之則端之印刷後之圖案狀 態，實施例1〜2之任一者皆a卢 白句民好’但於比較例1中產生了 局部飛白。關於太陽能電池1 也1之特性，例如關於Pm值，實 施例1中相對比較例i中改善 — i ί 1 /〇 ’貫施例2中相對比較 162473.doc 201242043 例1改善了 2.4% »關於膏使用量，實施例相對於比較例 1可減少8% ’實施例2中相對比較例！可減少1〇%。 若網版21之乳劑部23厚度係以隨著接近子栅極電極圖案 之前端越薄之方式形成，則在子柵極電極圖案之寬度較窄 之部份，由於銀膏通過乳劑部23之距離變短，故銀膏自網 版之穿過會變好〇因此，可防止子栅極電極3之寬度較窄 之部份產生印刷之飛白，亦可正常形成前端部份之寬度較 窄之子柵極電極3。藉此，由於入射至太陽能電池丨之受光 面之太陽光增加，故太陽能電池丨之特性提高。爲了有效 得到s玄效果，形成子柵極電極3之前端之乳劑部之厚度 宜為形成子柵極電極3之長度方向中心（例如位於集電極2 與集電集2之間的子柵極電極3)之乳劑部23之厚度之倍 以上0.9倍以下，且更佳為形成子柵極電極3之長度方向中 心之乳劑部23之厚度之〇,2倍以上〇 7倍以下。 又，由於子栅極電極3之寬度較窄部份形成為較薄，故 可使用以形成受光面側銀電極之膏使用量減少。除此之 外，無需導入新設備，只要改變網版之構造，即可形成本 貫施形態之受光面侧銀電極。 另，為抑制因子栅極電極3之電阻造成之損失，理想為 子柵極電極3之剖面較大。又，為防止子柵極電極3遮：入 射至太陽能電池I之太陽光，理想為子柵極電極3之表面積 較小。綜上所述，理想為子柵極電極3寬度較窄、且厚度 較厚。例如，上述實施例】中使用之網版21中，使用改^ 膏之粘彈性而使網版之穿過性變好之銀膏之情形下，可形 成長度方向中心之電極寬度/電極厚度為115 _/21㈣且前 162473.doc 14 201242043 端之電極寬度/電極厚度為80 μπι/1 5 μπι之子柵極電極3。 〈實施形態2> 實施形態2中，顯示用以形成圖2之步驟S5之受光面側銀 電極之銀膏之印刷步驟及乾燥步驟之另一例。 本實施形態中，作為用以將銀膏網版印刷之網版，使用 具備懸浮金屬遮罩（遮罩槔件）之網版（網版）3 1。上述之實 施形態1中使用之網版21為藉由將乳劑塗佈於網版紗，且 於塗佈有乳劑之網版紗形成電極圖案而製作者。相對於 此，網版3 1為於Ni鍍敷箔等之金屬上形成電極圖案，且將 該電極圖.案粘貼於不銹鋼篩網等之網版紗而製作成者。作 為遮罩構件之具備懸浮金屬遮罩之網版，由於耐久性高， 故有可增加該網版之使用次數 '尺寸穩定性優異，及膏透 過性優異等點，基於此故近年來一直受到大量使用。另， 可使用Ni合金或不錄鋼代替Ni。 圖4(b)係圖4(a)中Purely remove the damaged layer. Next, in step (4), a 〇-type diffusion layer is formed on the side of the light-receiving surface of the field energy battery 1 (hereinafter referred to as the "light-receiving surface of the P-type substrate" by the thermal diffusion of the disk by the electric CVD In the method, a nitrogen cut film of a material reflection preventing film is formed on the upper surface of the n-type semiconductor layer. A time 'In step S3, the silver paste is printed by the screen printing method? One part of the back side of the type of stone substrate (the town is called "the back of the p-finished substrate") is partially dried and dried. Next, in the step S4, the aluminum paste is printed on the back surface of the P-type slab substrate by screen printing to be almost completely dried. At this time, the paste is printed on the back side of the p-type 矽 substrate by partially overlapping the paste and the silver paste. Then, in step S5tf?, the silver paste on the light-receiving surface side of the pattern shown in Fig. 2 is formed on the anti-reflection film, and the silver paste is printed by a printing method and dried. Second, in the secret, heat treatment. Thereby, a light-receiving surface side silver electrode, a back side side silver electrode, an aluminum electrode, and a BSF layer were formed. At this time, the silver paste piercing reflection preventing film formed in the step S5 is brought into contact with the n-type diffusion layer, whereby the light-receiving surface side silver electrode is formed. Thus, the solar cell 1 shown in Fig. 1 was produced. <Embodiment 1> In the first embodiment, a printing step and a drying step of forming a silver paste for forming a silver surface on the light-receiving side of step S5 of Fig. 2 are shown. Fig. 3 (a) is a plan view of a screen (screen) 21 for printing silver paste by screen printing from above. Fig. 3(b) is a plan view of the 2Ιπβιιιβ line shown in Fig. 3(a). The full plate 21 is provided with a screen yarn 22 and an emulsion portion 23. The emulsion portion 23 functions as a mask member and is disposed below the screen yarn 22, and has an electrode pattern (collector pattern) corresponding to the collector electrode 2 and an electrode pattern corresponding to the sub-gate electrode 3 162473.doc 201242043 ( Sub-gate electrode pattern) Specifically, the emulsion portion 23 is formed with an opening portion (corresponding to a collector pattern) having the same planar shape as that of the collector electrode 2 and the same shape as that of the sub-gate electrode 3 The opening portion (corresponding to the sub-gate electrode pattern) is disposed above the screen yarn 22, passes through the screen knife 22, passes through the screen yarn 22, and is formed in the opening portion of the emulsion 23, and is printed on The upper surface of the p-type slab substrate 24 (the p-type slate substrate is disposed below the emulsion portion 23). Here, a study for printing the sub-gate electrode 3 including a tapered shape in which the electrode width is narrowed as the self-collector 2 approaches the front end of the sub-gate electrode 3 is performed. Further, the width and thickness of the sub-gate electrode 3 located between the collector 2 and the collector 2 are fixed. In cooperation with the tapered shape of the sub-gate electrode 3, the shape of the sub-gate electrode pattern formed on the screen 21 is a tapered shape in which the pattern width is narrowed toward the front end of the sub-gate electrode pattern, and further, the emulsion portion is formed. The shape of 23 is a tapered shape whose thickness is continuously thinned as approaching the front end of the sub-gate electrode pattern. Such a tapered shape is formed, for example, by sanding the emulsion portion 23 several times with a sandpaper of 1 nickname. Further, 'the thickness of the emulsion portion 23 in the vicinity of the center in the longitudinal direction of the sub-gate electrode pattern and the thickness of the emulsion portion 23 in the vicinity of the collector pattern are di, and the thickness of the emulsion portion 23 at the front end of the sub-gate electrode pattern is set to D2, change and d2 form a light-receiving surface silver electrode, and the obtained solar cell 1 is evaluated. Hereinafter, the electrode width in the vicinity of the center in the longitudinal direction of the sub-gate electrode pattern of the screen 21 of Examples 1 to 2 and Comparative Example 1 and the electrode width at the front end of the sub-gate electrode pattern of the screen 2, d1 and d2 are shown. Further, in Comparative Example 1, the thickness of the emulsion portion 23 was fixed in the longitudinal direction of the sub-gate electrode pattern. 162473.doc •10· 201242043 Example 1: Center: electrode width/emulsion thickness (dl)—100 μηι/20 μηι Front: electrode width/emulsion thickness (d2)—70 μηι/8 μηι Example 2: Center: Electrode width / emulsion thickness (dl) - 100 μηι / 20 μηι Front end · Electrode width / emulsion thickness (d2) - 60 μιη / 8 μιη Comparative Example 1: Center: electrode width / emulsion thickness (dl) - 1 〇〇 μπι / 2〇μηι front end: electrode width / emulsion thickness (d2) - 70 μιη / 20 μπι The light-receiving side silver electrode was formed according to the above conditions, and the solar cell shown in Fig. 1 was produced according to the process shown in Fig. 2; 1.1, the solar cell obtained by evaluation. The results are shown in Table 1. 162473.doc 201242043 [Table i] Usage of paste CN Os Ο 1 〇 Characteristic 1_ ε pH 1.021 1.024 1.000 [X| 1.018 1.017 1.000 ο 1.003 1.003 1.000 1.000 1.004 1.000 Pattern state after printing at the front end << CQ roasting Post-sugar electrode electrode thickness direction shape conical taper Η 0 conical taper cone '\W electrode thickness [μηι] 〇〇 1 1 electrode width [μιη] yr\ oo 1 electrode thickness [μιη] 1 electrode width [ Μηι] % 1 screen design value sub-gate electrode front end emulsion thickness [μηι] oo 〇〇 electrode width [μιη] Ο 〇 4- emulsion thickness [μηι] 宕 electrode width [μηι] ο 〇〇 Example 1 Example 2 Comparative Example 1 162473.doc 12 201242043 In Table 1, the center means the vicinity of the center in the longitudinal direction of the sub-gate electrode pattern of the screen 21, and the front end means the front end of the sub-gate electrode pattern formed on the screen 21. The thickness of the emulsion means the thickness of the emulsion portion 23. In Table 1, Jsc is a short-circuit current density, a Voc-based open voltage, a ff-based curve factor, and a Pm-based maximum output. The Jsc value, the Voc value, the FF value, and the Pm value of Table 1 are ratios of the jsc value, the v〇c value, the ρρ value, and the pm value of Comparative Example 1, respectively. Further, the amount of the paste used in Table 1 was also the ratio of the amount of the paste used in Comparative Example 1. Furthermore, the pattern state after printing at the front end of Table 1 shows the state of the pattern after printing of the front end of the sub-gate electrode 3, and "a" of Table 1 means the state of the pattern after printing of the front end of the sub-gate electrode 3. Good, "B" of the table i means that the printed pattern at the front end of the sub-gate electrode 3 is whitened. Here, "B" in Table 1 indicates that the silver paste enters the thickness direction of the emulsion portion 23, but there is a portion that cannot reach the light-receiving surface of the p-type ruthenium substrate 24, so that the electrode after printing is partially whitened. As shown in Table 1, in any of the embodiments 丨 to 2, the sub-gate electrodes 3 are formed in a shape corresponding to the shape of the sub-gate electrode pattern formed on the screen 21. The planar shape of the sub-gate electrode 3 is a tapered shape in which the electrode width is narrowed as approaching the front end of the sub-gate electrode 3. Further, the thickness of the sub-gate electrode 3 is gradually thinned toward the front end of the sub-gate electric (10) (corresponding to "the shape in the thickness direction" in Table 1 is "conical"). As shown in Table 1, 'the pattern state after printing on the end of the sub-gate electrode a electrode 3, any of the examples 1 to 2 is a Lu Bai sentence good" but produced in the comparative example 1. Partially white. Regarding the characteristics of the solar cell 1 also, for example, regarding the Pm value, the improvement in the comparative example i in Example 1 - i ί 1 / 〇 'Comparative comparison in Example 2 162473.doc 201242043 Example 1 improved 2.4% »About The amount of the paste used was reduced by 8% relative to Comparative Example 1 'Comparative Comparative Example in Example 2! Can be reduced by 1%. If the thickness of the emulsion portion 23 of the screen 21 is formed to be thinner as the front end of the sub-gate electrode pattern is thinner, the silver paste passes through the emulsion portion 23 in a portion where the width of the sub-gate electrode pattern is narrow. Since the distance is shortened, the silver paste is improved from the screen, so that the narrower portion of the sub-gate electrode 3 can be prevented from producing whitening of the printing, and the narrow portion of the front end portion can be normally formed. Gate electrode 3. Thereby, since the sunlight incident on the light-receiving surface of the solar cell is increased, the characteristics of the solar cell are improved. In order to effectively obtain the smear effect, the thickness of the emulsion portion forming the front end of the sub-gate electrode 3 is preferably the center of the length direction of the sub-gate electrode 3 (for example, the sub-gate electrode between the collector 2 and the collector set 2). 3) The thickness of the emulsion portion 23 is at most 0.9 times or less, and more preferably the thickness of the emulsion portion 23 forming the longitudinal direction center of the sub-gate electrode 3 is 2 times or more and 7 times or less. Further, since the narrow portion of the sub-gate electrode 3 is formed to be thin, the amount of paste used to form the silver electrode on the light-receiving surface side can be reduced. In addition to this, it is not necessary to introduce a new device, and the light-receiving side silver electrode of the present embodiment can be formed by changing the configuration of the screen. Further, in order to suppress the loss due to the resistance of the factor gate electrode 3, it is desirable that the profile of the sub-gate electrode 3 is large. Further, in order to prevent the sub-gate electrode 3 from being shielded from sunlight incident on the solar cell 1, the surface area of the sub-gate electrode 3 is preferably small. In summary, it is desirable that the sub-gate electrode 3 has a narrow width and a thick thickness. For example, in the screen 21 used in the above embodiment, in the case of using the viscoelasticity of the paste to improve the passability of the screen, the electrode width/electrode thickness at the center in the longitudinal direction can be formed. 115 _/21 (4) and the first 162473.doc 14 201242043 The electrode width / electrode thickness of the gate electrode 3 of 80 μπι / 1 5 μπι. <Embodiment 2> In the second embodiment, another example of a printing step and a drying step of forming a silver paste for forming a silver-surface side silver electrode of the step S5 of Fig. 2 is shown. In the present embodiment, as a screen for printing a silver paste, a screen (screen) 31 having a suspended metal mask (mask) is used. The screen 21 used in the above-described Embodiment 1 is produced by applying an emulsion to a screen yarn and forming an electrode pattern on a screen yarn coated with an emulsion. On the other hand, the screen 31 is formed by forming an electrode pattern on a metal such as a Ni plating foil, and attaching the electrode pattern to a screen yarn such as a stainless steel screen. A screen having a suspended metal mask as a mask member has a high durability, so that the number of times of use of the screen can be increased, and the dimensional stability is excellent, and the paste permeability is excellent. Use a lot. Alternatively, Ni alloy or non-recorded steel may be used instead of Ni. Figure 4 (b) is in Figure 4 (a)
通過網版紗32，進而通 i62473.doc 圖4(a)係自上方觀察網版31之俯視圖 所示之IVB-IVB線之剖面圖，圖4(c)係 15 201242043 過形成於Ni錢敷羯部33之開口部，印刷於p型石夕基板24(p 型矽基板24配置於較Ni鍍敷箔部33更下方）之上表面。 與上述之實施形態1相同，有人進行用以印刷子柵極電 極3之研究，該子柵極電極3係包含電極寬度隨著自集電極 2接近子柵極電極3之前端變窄之錐形形狀。另，位於集電 極2與集電極2之間之子柵極電極3之寬度及厚度固定。配 合子柵極電極3之錐形形狀，使形成於網版31之子栅極電 極圖案之形狀為電極寬度隨著接近該子柵極電極圖案之前 端變窄之錐形形狀。又，於州鍍敷落部33中設置階差，且 使子柵極電極圖案之前端側之犯鍍敷箔部33之鍍敷厚度為 子柵極電極圖案之長度方向中心附近之Ni鍍敷箔部33之鍍 敷厚度之大約一半。如此之州鍍敷箔部33，係藉由用ι〇〇〇 號砂紙以一定壓力複數次僅研磨子柵極電極圖案之前端部 伤，以使子柵極電極圖案之前端部份成為所需之厚度之方 式而形成。另，Ni鍍敷箔部33可藉由其他之研磨法形成。 又，網版之遮罩構件為鍍敷箔之情形下，以遮罩構件之厚 度隨著自子柵極電極圖案之長度方向中心附近接近前端連 續變薄之方式形成遮罩構件，加工需大量工夫。藉由自子 栅極電極圖案之長度方向中心附近接近前端之途中設置階 差，以遮罩構件之厚度不連續變薄之方式形成遮罩構件， 加工較容易。 且，將子柵極電極圖案之長度方向中心附近之Ni鍍敷箔 部33之厚度及集電極圖案附近之州鍍敷箔部33之厚度設為 dl 1 ’將子柵極電極圖案之前端之犯鍍敷箔部33之厚度設 162473.doc •16· 201242043 為dl2，更改dll及dl2形成受光面側銀電極，並評價得到 之太陽能電池。 以下，顯示實施例3〜4及比較例2令之網版31之子柵極電 極圖案之長度方向中心附近之電極寬度、網版31之 電極圖案之前端之電極寬度、dll及dl2。另，比較例之 中，在子柵極電極圖案之長度方向上使犯鍍制部33之厚 實施例3:中心：電極寬/鍍敷厚（dll)—85pm/2〇pm 刖端：電極寬/鍍敷厚（dl2) —75 μηι/10 μπι 實施例4:中心：電極寬/鍍敷厚（dll) —85μΐη/20μπι 月J 電極寬/鍵敷厚（dl2) —► 70 μηι/1 0 μΐΏ 比較例2 .中心：電極寬/鍍敷厚（dll) —85 μπι/20 μηι 月’』端：電極寬/鍍敷厚（dl2)->75pm/20 μηι 根據上述條件形成受光面側銀電極，根據圖2中所示之 製作流程製作圖〗φ _ 園1中所不之太陽能電池1。且，評價得到之 太陽能電池之輯批 .± , 心特性。在表2中顯示其結果。 162473.doc 201242043 [表2] 膏之 使用量 0.99 0.97 1.00 特性 B 1.027 1.030 1.000 I (X) Pu. ! 1.041 1.040 1.000 Voc 1.000 1.000 1.000 0.986 0.990 1.000 前端之 印刷後 之圖案 狀態 < < 0Q 焙燒後 子拇極電極 厚度 方向 形狀 1 階梯 (2階） 階梯 (2階） 1 固定 平面 形狀 錐形 錐形 錐形 前端 電極厚 [μηι] 〇 On 1 電極宽 [μηι] m Os OO OO 1 y 4- 電極厚 [μηι] 寸 工 1 電極寬 [μηι] S s 1 網版設計值 子柵極電極 前端 鍍敷厚 [μιη] Ο Ο 電極寬 [μΐΏ] Ο vn 4- 鍍敷厚 [μηι] 宕 電極寬 [μηι] in oo 00 00 實施例 3 實施例 4 比較例 2 162473.doc •18- 201242043 表2中，中心及前端如表丨所示，鍍敷厚意味著川鍍敷箔 部33之厚度。 表2中，JSC、Voc、打及〜如表（所示。表2之以值、 Voc值、FF值及Pm值分別係相對比較例⑴叫直、—值、 FF值及卩爪值之比率。又，表2之膏使用量亦係相對比較例 2之膏使用里之比率。又，表2之前端之印刷後之圖案狀態 係顯示子柵極電極3之前端之印刷後之圖案狀態，表2之 A」及「B」如表1所示。 如表2所不，實施例3〜4之任一者中，子柵極電極3皆形 成為與形成於網版31之子柵極電極圖案之形狀對應之形 狀。具體而t，子柵極電極3之+面形狀係電極寬度隨著 接近子栅極電極3之前端變窄之錐形形狀。又，子拇極電 極3之厚度方向之形狀形成為2階之階梯狀（相當於表2中 「厚度方向形狀」為「階梯(2階)」）。又，如表2所示，關 於前端之印刷後之圖案狀態，實施例3〜4之任一者皆為良 好，但於比較例2中產生了局部飛白。 關於太陽能電池之特性，例如關於1>111值，實施例3中相 對比較例2改善了 2.7%，實施例4中相對比較例2改善了 3.0% »關於膏使用量’實施例3中相對比較例2可減少 1%，實施例4中相對比較例2可減少3%。 藉由在網版之鑛敷羯部33令設置階差，若使子拇極電 極圖案之前端側之鑛敷落部33之厚度薄於子柵極電極圖案 之長度方向令心附近之鍍敷猪部33之厚度，則在子拇極電 極3之寬度較窄之部份’由於銀膏通過鑛敷落扣之距離 162473.doc -19· 201242043 變短，故銀膏自網版之穿過會變好。因此，可防止子柵極 電極3之寬度較窄之部份產生印刷之飛白，亦可正常形成 則端部份之寬度較窄之子柵極電極3。藉此，由於入射至 太陽此電池之觉光面之太陽光增加，故太陽能電池之特性 提高。即使如本實施形態般子柵極電極3之厚度方向之形 狀不是錐形而是階梯狀仍可得到該效果。又，爲了有效得 到忒效果，形成子柵極電極3之前端之鍍敷箔部33之厚度 宜為形成子柵極電極3之長度方向中心（例如位於集電極2 與集電極2之間之子柵極電極3)之鍍敷箔部33之厚度之〇^ 倍以上0.99倍以下，且更佳為形成子柵極電極3之長度方 向中心之鍍敷落部33之厚度之〇.2倍以上〇7倍以下。 又，由於子柵極電極3之寬度較窄部份形成為較薄，故 可使用以形成受光面側銀電極之膏使用量減少。除此之 外’無需導入新設備，只要改變網版之構造，即可形成本 實施形態之受光面侧銀電極。實施例3〜4中，雖在筛網 使用直徑25㈣之網版紗，但不言而喻，網版紗並不限定 於該規格β 〈實施形態3> 實施形態3中，顯示用以报士、闽Λ a η 只 用以形成圖2之步驟S5之受光面側) 電極之銀膏之印刷步驟及乾燥步驟之再一例。 本實施形態中’作為用以網版印刷銀膏之網版，使用 備懸浮金屬遮罩（遮罩構件）之網版（網版）41。網版4ι^ 使用網版紗而僅由金屬形成之雄1 〜成之網版。作為網版41之材料 主要使用Ni系金屬，亦可佶用 便用不銹鋼或銅合金。作為遮 162473.doc •20. 201242043 構件具備金屬遮罩之網版，由於耐久性高，故有可增加該 網版之使用次數，尺寸穩定性優異，及較作為遮罩構件具 備懸浮金屬遮罩之網版，膏透過性更優異等之優點。另一 方面，由於作為遮罩構件具備金屬遮罩之網版中，金屬遮 罩未受到網版紗支撐，故難以使用該網版形成如懸空圖案 般之島狀部。因此’難以使用具備金屬遮罩之網版作為遮 罩構件形成如集電極2與子柵極電極3般正交之電極，且需 要分別分開印刷集電極2與子柵極電極3等之特殊作法。本 實施形態中，使用網版41藉由網版印刷製作子柵極電極 3且使用具備懸洋金屬遮罩之網版作為遮罩構件網版 印刷集電極2。 圖5(a)係自上方觀察網版41之俯視圖，圖5(b)係圖5(勾中 所不之VB-VB線之剖面圖，圖5(c)係圖5(b)中所示之vc區 域之放大圖《網版41具備Ni板部43。Ni板部43作為遮罩構 件發揮功能，且具有與子栅極電極3對應之電極圖案。具 體而言，於Ni板部43中形成有與子柵極電極3之平面形狀 相同形狀之開口部(相當於子柵極電極圖案”銀膏係設置 於Nl板部43之上’藉由到漿刀，通過形成於Ni板部43之開 口部’印刷於p型石夕基板24(p型石夕基板24配置於較犯 43更下方）之上表面上。 與上述之實施形態相同，有人進行用以印刷子柵極 極3之研九’ β亥子柵極電極3係包含電極寬度隨著自集 極2接近子柵極電極3之前端變窄之錐形形狀4，位於隼 電極2與集電極2之間之子柵極電極3之寬度及厚度固// I62473.doc 21 201242043 配合子柵極電極3之錐形形狀，使形成於網版41之子栅極 電極圖案之形狀為電極寬度隨著接近該子柵極電極圖案之 前力而變乍之錐形形狀。又，於Ni板部43中設置階差，且使 子柵極電極圖案之前端側之Ni板部43之鍍敷厚度為子柵極 電極圖案之長度方向申心附近之Ni板部43之鍍敷厚度之大 '•勺半。如此之Nl板部43，係藉由用1 〇〇〇號砂紙以一定壓 力複數次僅研磨子柵極電極圖案之前端部份，以使子柵極 電極圖案之前端部份成為所需之厚度之方式而形成。另， Ni板部43可藉由其他之研磨法形成。又，網版之遮罩構件 為金屬板之情形下，以遮罩構件之厚度隨著自子柵極電極 圖案之長度方向中心附近接近前端連續變薄之方式形成遮 罩構件，加工需大量工夫。藉由自子柵極電極圖案之長度 方向中心附近接近前端之途中設置階差，以遮罩構件之厚 度不連續變薄之方式形成遮罩構件，加工較容易。 且，將子栅極電極圖案之長度方向中心附近之Ni板部43 之厚度及集電極圖案附近之Ni板部43之厚度設為d21，將 子柵極電極圖案之前端之Ni板部43之厚度設為d22，更改 及d22形成受光面側銀電極，並評價得到之太陽能電 池0 以下，顯示實施例5〜6及比較例3中之網版41之子柵極電 極圖案之長度方向中心附近之電極寬度 '網版41之子柵極 電極圖案之前端之電極寬度、d2丨及d22。另，比較例3 中，在子柵極電極圖案之長度方向上使犯板部43之厚度固 定。 I62473.doc -22· 201242043 實施例5 :中心：電極寬/Ni板厚（d2 1) —75 μηι/40 μηι 前端：電極寬/Ni板厚（d22) —65 μιη/20 μηι 實施例6 :中心：電極寬/Ni板厚（d2 1)—·75 μιη/40 μηι 前端：電極寬/Ni板厚（d22)—>60 μηι/20 μπι 比較例3 :中心：電極寬/Ni板厚（d2 1) —75 μηι/40 μηι 前端：電極寬/Ni板厚（d22)—·65 μηι/40 μηι 根據上述條件形成受光面側銀電極，根據圖2中所示之 製作流程製作圖1中所示之太陽能電池1。且，評價得到之 太陽能電池之特性。在表3中顯示其結果。 162473.doc 23- 201242043 [表3] 膏之 使用量 0.99 0.95 1.00 特性 B 〇, 1.023 1.025 i _1 1.000 Uh Uh 1 i 1.034 1.032 1.000 Voc 0.999 1.000 1.000 0.991 0.993 1.000 前端之 印刷後 之圖案 狀態 < < « 焙燒後 子棚·極電極 I 厚度 方向 形狀 1 階梯 (2階） 階梯 (2階） 固定 平面 形狀 1 錐形 錐形 錐形 柘 電極厚 [μιη] Ό 1 電極寬 [μηι] 00 S 1 電極厚 [μηι] 〇\ ON 1 電極寬 〇\ 幽 網版設計值 子柵極電極 前端 Ni板厚 [μηι] 〇 電極寬 [μηα] y Ni板厚 [μηι] ο 〇 〇 電極寬 [μιη] in 實施例 5 實施例 6 比較例 3 162473.doc -24- 201242043 表3中，中心及前端如表i所示，犯板厚意味著川板部43 之厚度。 表3中，JSC、Voc、FF&Pm如表丨所示。表3之Jsc值、 V〇e值、FF值及Pm值分別係相對比較例3iJsc值、v〇c值、 FF值及Pm值之比率。又，表3之膏使用量亦係相對比較例 3之膏使用量之比率。又，表3之前端之印刷後之圖案狀態 顯不子栅極電極3之前端之印刷後之圖案狀態，表3之 「A」及「B」如表1所示β 如表3所示，實施例5〜6之任一者中，子栅極電極3皆形 成為與形成於網版41上之子柵極電極圖案之形狀對應之形 狀。具體而言，子柵择電極3之平面形狀係電極寬度隨著 接近子柵極電極3之前端變窄之錐形形狀。又，子柵極電 極3之厚度方向之形狀形成為2階之階梯狀（相當於表3十 「厚度方向形狀」為「階梯（2階）」）。又，如表3所示，關 於前端之印刷後之圖案狀態，實施例5〜6之任一者皆為良 好’但比較例3中產生了局部飛白。 關於太陽能電池之特性，例如關於pm值，實施例5中相 對比較例3改善了 2.3%，實施例6中相對比較例3改善了 2.5%。關於膏使用量，實施例5中相對比較例3可減少 1 °/〇 ’實施例6中相對比較例3可減少5。/〇。 藉由在網版41之Ni板部43中設置階差，若使子柵極電極 圖案之前端側之Νί板部43之厚度薄於子柵極電極圖案之長 度方向中心附近之Ni板部43之厚度，則在子柵極電極3之 寬度較窄之部份，由於銀膏通過犯板部43之距離變短，故 I62473.doc •25· 201242043 銀膏自網版之穿過會變好。因此，可防止子栅極電極3之 宽度較窄之部份產生印刷之飛白，亦可正常形成前端部份 之宽度較窄之子柵極電極3β藉此，由於入射至太陽能電 池之受光面之太陽光增加，故太陽能電池之特性提高。即 使如本實施形態般子柵極電極3之厚度方向之形狀不是錐 形而是階梯狀仍可得到該效果。又，爲了有效得到該效 果，形成子柵極電極3之前端之犯板部43之厚度宜為形成 子柵極電極3之長度方向中心（例如位於集電極2與集電極2 之間之子柵極電極3)之Ni板部43之厚度之〇丨倍以上〇%倍 以下，且更佳為形成子柵極電極3之長度方向中心之州板 部43之厚度之〇·2倍以上〇·7倍以下。 又，由於子栅極電極3之寬度較窄部份形成為較薄，故 可使用以形成受光面侧銀電極之膏使用量減少。除此之 外，無需導入新設備，只要改變網版之構造，即可形成本 實施形態之受光面側銀電極。 <子栅極電極3之其他形狀之例> 上述之實施形態1〜3中，爲了增加朝向太陽能電池之入 射光強度之目的，以子柵極電極3之平面形狀為寬度隨著 接近前端變窄之錐形形狀方式藉由網版印刷法形成子柵極 電極3。又，爲了防止印刷之飛白之目的，以子栅極電極3 之前端側之該子柵極電極3之厚度薄於子柵極電極3之長度 方向中心附近之該子柵極電極3之厚度之方式，藉由網版 印刷法形成子栅極電極3。然而，爲了得到增加朝向太陽 能電池之入射光強度之效果及防止印刷之飛白之效果，子 162473.doc •26· 201242043 拇極電極3之形狀不受上述之實施形態卜3之形狀限制。 圖6(a)〜(g)係顯示子柵極電極3之平面形狀之一例之圖 且相當於圖】⑽區域之放大圖。圓6⑷中所示之子柳極電 極3中，隨著接近子柵極電極3之前端，子柵極電極3之寬 度以固定之比例縮減’且圖6⑷中所示之子柵極電極3具有 與上述之實施形態卜3之子拇極電極3相同之形狀。圖咐） 中所示之子栅極電極3中，隨著接近子柵極電極3之前端， 子柵極電極3之寬度之縮減率變大，而圖6⑷中所示之子栅 極電極3中’隨著接近子栅極電極3之前端，子栅極電極3 之寬度之縮減率變小。圖6(d)中所示之子柵極電極3中，子 柵極電極3之寬度在子柵極電極3從自集電極2延伸之部份 (以下記載為「子栅極電極3之根部」)至子柵極電極心 度方向之中途為固定，之後，隨著接近子柵極電極3之前 端，以固定之比例縮減。圖6⑷中所示之子柵極電極3中， 子柵極電極3之寬度在自子柵極電極3之根部至子柵極電極 度方向之中途為固定，之後，隨著接近子柵極電極3 之前端’子栅極電極3之寬度之縮減率變大。圖6(f)中所示 之子《電極3中，子栅極電極3之寬度隨著接近子栅極電 極3之刖端階段性變窄。圖6(g)中所示之子柵極電極3中， 子柵極電極3之寬度’與圖6⑴同樣地隨著接近子柵極電極 L之山前端^段性變窄’且在各階中隨著接近子柵極電極3之 刖鈿變乍。另’圖6(f)中所示之子柵極電極3及圖❿)中所 不之子栅極電極3中，階梯之階數並不限定於3階，可為2 階’亦可為4階以上。又’圖6(f)中所示之子栅極電極3 162473.doc -27· 201242043 中’子柵極電極3之中^側之電極寬度相對子柵極電極3之 根心則之電極寬度之比例不受特別限制，且子柵極電極3 之前4側之電極寬度相對子柵極電極3之中心側之電極寬 度之比例不受特別限制。這在圖6(g)"斤示之子柵極電極3 中亦同理。 圖6⑷〜圖6(g)中所示之子拇極電極3中，&於可謀求p型 矽基板24之受光面中之子拇極電極3之佔有面積之縮減， 故可增加對太陽能電池之入射光之強度。 圖7(a)〜(g)係顯示子栅極電極3之剖面形狀之一例之圖， 且相當於圆域之放大剖面圖。圖7⑷〜(以，於集 電極2及子柵極電極3之下側設置有P型矽基板24(圖 7⑷〜(g)中未圖示）。…⑷中所示之子拇極電極3中，隨著 朝向子柵極電極3之前端，厚度以固定之比例縮減，且圖 7⑷中所不之子柵極電極3具有與上述之實施形態!之子栅 ^電極3相同之形狀。圖7(以所示之子柵極電⑽，隨著 栅極電極3之前端，厚度之縮減率變大，圖7(c)中所 Γ子栅極電極3中，隨著朝向子栅極電極3之前端朝向厚 度之縮減率變小。圖7(d)中 電·…. 栅極電極3中，子柵極 戶方：Φ 栅極電極3之根部至子栅極電極3之長 又》之中途為固定，之後隨著朝向子拇 =之比例縮減。叫)中所示之子柵極電極3中:： h之厚度在自子柵極電極3之根部至子 長度方向之申冷泉κι— €極3之 端… ’之後隨著朝向子栅極電極3之前 知’子柵極電極3之厚度之縮減率變大。圖7(f)中所示之子 t62473.doc -28- 201242043 之前：:柵極電極3之厚度隨著朝向子柵極電極3 極=㈣變薄。圖7(射所示之子栅極電極3中，子栅 之厚度與圖7(f)同樣地隨著朝 :而階段性變薄’且在各階令隨著朝向子拇極電極3之： 之早Μ 之子拇極電極3及圖7(g)中所示 極電極3中’階梯之階數並不限定於3階，可為2 二’亦可為4階以上。又，圖7⑺中所示之子栅極電極3 中’子柵極電極3之中心側之厚度相對子柵極電極3之根部 側之厚度之比例不受特別限制，且子栅極電極3之前端側 之厚度相對子柵極電極3之中心側之厚度之比例不受特別 限制這在圖7(g)中所示之子拇極電極3中亦同理。 圖7(a)〜圖7(g)中所示之子撕極電極3中，由於子拇極電 極3之前端側之厚度變薄，換言之由於電極寬度較窄之部 份之子栅極電極3之厚度變薄，故可防止電極寬度較窄之 部份之子栅極電極3之印刷之飛白。 如上述之圖6⑷〜(g)及圖7⑷〜(g)所示，作為本發明之子 柵極電極3之平面形狀及厚度方向之形狀，可考慮各種形 狀。可自由組合該等平面形狀及厚度方向之形狀作為子拇 極電極3之形狀，且無論怎樣組合都可發揮同樣之效果（可 增加朝向太陽能電池之人射光之強度，且可防止子拇極電 極3之印刷之飛白）。且，用以網版印刷如此之形狀之子栅 極電極3之網版為任一者都可達成本發明之目的者。 另，子栅極電極3係用以使太陽能電池中產生之光電流 盡可能沒有損失地集電者。由於集中之電流全部流至子柵 162473.doc •29- 201242043 極電極3之根部部份，故至少子栅極電極3之根部部份宜較 粗。 上述之實施形態Η中’顯示有各不相同之種類之網 版。即使網版之種類不同，若網版之子柵極電極圖案之形 狀具有特;t之形狀，具體而言即使網版之種類不同若網 版之子栅極電極圆案之形狀具有圖6(a)〜(g)之任一之平面 形狀且具有圖7⑷〜⑻之任一之剖面形狀，則仍可增加朝 向太陽能電池之入射光之強《，且可防止子栅極電極3之 印刷之飛白。 上述之實施形態i〜3中，位於集電極2與集電極2之間之 子柵極電極3中，電極寬度固定。然❿，即使使位於集電 極2與集電極2之間之子柵極電極3之寬度自集電極2越遠越 窄，且，使位於集電極2與集電極2之間之子栅極電極3之 厚度自集電極2越遠越薄，仍可得到如下效果：可增加朝 向太陽能電池之入射光之強度，且可防止子栅極電極3之 印刷之飛白。 又’·在僅具備收集因入射光而產生之載子之電極之太陽 能電池中，隨著朝向電極之前端使該電極之寬度變窄，且 使該電極之厚度變薄即可。藉此，可得到如下效果：可增 加朝向太陽能電池之入射光之強度，且可防止子柵極電極 3之印刷之飛白。 又’受光面側銀電極4之材料並不限定於銀膏。即使在 使用鋁膏等之與銀膏不同之導電膏製作受光面側銀電極4 之情形下，仍可得到上述之實施形態i〜3中得到之效果。 162473.doc -30- 201242043 又，背面側僅形成有電極之背面側電極型太陽能電池中， 在形成該背面側電極時’亦可使用本發明之網版，且即使 在該情形下仍可得到上述之實施形態卜3中得到之效果。 又’本發明中’構成網版之構件之材料並無特別限制。 又’本發明中’構成電極以外之太陽能電池之構件之製造 方法並無特別限制。 又，本發明中，構成太陽能電池之構件之材料及構成太 陽此電池之構件之厚度並無特別限制。構成太陽能電池之 構件包含11型雜質或13型雜質之情形，η型雜質及p型雜質之 材料並無特別限制，且構成太陽能電 濃度及ρ型雜質濃度亦無特別限制。 此次揭示之實施形態及實施例並不是以所有之點 Γ例且不具限制性者。本發明之範圍藉由中請專利範圍顯 ΓΓ上述之說明顯示，且課求包含與申請專利範圍相 备之意思及範圍内之全部之改變。 【圖式簡單說明】 之太陽能電池之一例之俯 圖1係自受光面側觀察本發明 視圖。 圖2係按步驟順序顯示本發 之流程圖。 明之太陽能電池之製造方法 圊 圖3係具備包含乳劑之遮罩構件之網版之俯視圖及剖面 遮罩之網版之俯視圖、剖面圖及放 圖4係具備懸浮金屬 大圖。 162473.doc -31 - 201242043 圖5係具備金屬遮罩之網版之俯視圖、剖面圖及放大 圖。 圖6係本發明之子柵極電極之前端部份之俯視圖。 圖7係本發明之子栅極電極之前端部份之剖面圖。 圖8係顯示先前之太陽能電池之構成之一例之剖面圖。 圖9係自受光面側觀察圖8中所示之太陽能電池時之俯視 圖。 之太陽能電池時之俯視 圖10係自背面側觀察圖8中所示 圖 之一例之立體圖。 圖11係顯示先前之太陽能電池之構成 圖12係用以說明網版印刷法之剖面圖。 圖13係先前之網版之俯視圖及剖面圖。 【主要元件符號說明】 1 太陽能電池 2 集電極 3 子棚·極電極 4 受光面側銀電極 21 網版 22 網版紗 23 乳劑部 24 P型矽基板 31 藉由懸浮金屬遮罩構成 32 網版紗 33 Ni鍍敷箔部 162473.doc •32· 之網版 201242043 41 由金屬遮罩構成 43 Ni板部 101 太陽能電池 102 p型矽基板 103 η型擴散層 104 反射防止膜 105 集電極 106 BSF層 107 鋁電極 108 背面側銀電極 109 子柵極電極 110 受光面側銀電極 201 網版 202 膏狀材料 203 刮漿刀 204 平台 205 基板 301 Ρ型半導體基板 302 η型之半導體層 303 Ρ-型半導體層 304 受光面電極 305 表面主電極 306 背面電極 401 網版 162473.doc .33· 201242043 402 網版紗 403 乳劑部 404 碎基板 dl 厚度 d2 厚度 d3 厚度 dll 厚度 dl2 厚度 d22 厚度 d21 厚度 I62473.doc •34Fig. 4(a) is a cross-sectional view taken along line IVB-IVB of the top view of the screen 31 viewed from above, and Fig. 4(c) is 15 201242043 formed over Ni Qianshi. The opening of the crotch portion 33 is printed on the upper surface of the p-type slab substrate 24 (the p-type ruthenium substrate 24 is disposed below the Ni-plated foil portion 33). As in the first embodiment described above, the study for printing the sub-gate electrode 3 including the taper of the electrode width as the self-collector electrode 2 approaches the front end of the sub-gate electrode 3 is tapered. shape. Further, the width and thickness of the sub-gate electrode 3 between the collector 2 and the collector 2 are fixed. The tapered shape of the sub-gate electrode 3 is such that the shape of the sub-gate electrode pattern formed on the screen 31 is a tapered shape in which the electrode width becomes narrower as it approaches the front end of the sub-gate electrode pattern. Further, a step is provided in the plating portion 33 of the state, and the plating thickness of the plated foil portion 33 on the front end side of the sub-gate electrode pattern is Ni plating near the center in the longitudinal direction of the sub-gate electrode pattern. The foil portion 33 has a plating thickness of about half. In such a state, the plated foil portion 33 is formed by grinding the end portion of the sub-gate electrode pattern with a certain pressure at a certain pressure by using ι 砂 sandpaper to make the front end portion of the sub-gate electrode pattern desired. The thickness is formed in a manner. Further, the Ni plating foil portion 33 can be formed by another grinding method. Further, in the case where the mask member of the screen is a plated foil, the mask member is formed such that the thickness of the mask member is continuously thinned from the vicinity of the center of the length direction of the sub-gate electrode pattern toward the front end, and the processing requires a large amount of processing. time. By providing a step on the way from the vicinity of the center of the longitudinal direction of the sub-gate electrode pattern to the front end, the mask member is formed such that the thickness of the mask member is discontinuously thinned, which makes processing easier. Further, the thickness of the Ni plating foil portion 33 in the vicinity of the center in the longitudinal direction of the sub-gate electrode pattern and the thickness of the state plating foil portion 33 in the vicinity of the collector pattern are set to dl 1 ' at the front end of the sub-gate electrode pattern. The thickness of the plated foil portion 33 is set to 162473.doc •16·201242043 is dl2, and the dll and dl2 are changed to form the silver electrode on the light-receiving side, and the obtained solar cell is evaluated. Hereinafter, the electrode width in the vicinity of the center in the longitudinal direction of the sub-gate electrode pattern of the screen 31 of Examples 3 to 4 and Comparative Example 2, the electrode width at the front end of the electrode pattern of the screen 31, dll and dl2 are shown. Further, in the comparative example, the thickness of the plating portion 33 was made thick in the longitudinal direction of the sub-gate electrode pattern. Example 3: Center: electrode width / plating thickness (dll) - 85 pm / 2 pm 刖 end: electrode Width/plating thickness (dl2) - 75 μηι/10 μπι Example 4: Center: Electrode width / plating thickness (dll) - 85μΐη / 20μπι Month J Electrode width / bond thickness (dl2) — ► 70 μηι/1 0 μΐΏ Comparative Example 2. Center: Electrode width/plating thickness (dll)—85 μπι/20 μηι月 '』 End: electrode width/plating thickness (dl2)->75pm/20 μηι Forming the light receiving surface according to the above conditions The side silver electrode is made according to the manufacturing process shown in Fig. 2, and the solar cell 1 which is not in the garden 1 is produced. Moreover, the evaluation of the obtained solar cell batches. The results are shown in Table 2. 162473.doc 201242043 [Table 2] Usage of paste 0.99 0.97 1.00 Characteristic B 1.027 1.030 1.000 I (X) Pu. ! 1.041 1.040 1.000 Voc 1.000 1.000 1.000 0.986 0.990 1.000 Pattern status after printing on the front end < 0Q Roasting Rear sub-electrode electrode thickness direction shape 1 step (2nd order) step (2nd order) 1 fixed plane shape conical taper tapered front end electrode thickness [μηι] 〇On 1 electrode width [μηι] m Os OO OO 1 y 4 - Electrode thickness [μηι] Inch 1 Electrode width [μηι] S s 1 Screen design value Sub-gate electrode front plating thickness [μιη] Ο 电极 Electrode width [μΐΏ] Ο vn 4- Plating thickness [μηι] 宕Electrode width [μηι] in oo 00 00 Example 3 Example 4 Comparative Example 2 162473.doc •18- 201242043 In Table 2, the center and the front end are as shown in the table, and the plating thickness means the Sichuan plating foil portion 33. thickness. In Table 2, JSC, Voc, and ~ are as shown in the table (shown. Table 2, value, Voc value, FF value, and Pm value are respectively relative to the comparative example (1) called straight, - value, FF value, and paw value. In addition, the amount of paste used in Table 2 is also the ratio of the paste used in Comparative Example 2. Again, the post-printed pattern state at the front end of Table 2 shows the post-printed pattern state of the front end of the sub-gate electrode 3. Table 2, A" and "B" are shown in Table 1. As shown in Table 2, in any of Embodiments 3 to 4, the sub-gate electrodes 3 are formed as sub-gates formed on the screen 31. The shape of the electrode pattern corresponds to the shape. Specifically, t, the +-face shape of the sub-gate electrode 3 has a tapered shape which is narrowed toward the front end of the sub-gate electrode 3. Further, the thickness of the sub-electrode electrode 3 The shape of the direction is formed into a step of 2 steps (corresponding to the "thickness direction shape" in Table 2 is "step (2nd order)"). Further, as shown in Table 2, the state of the pattern after printing at the front end is as an example. Any of 3 to 4 is good, but partial whitening occurs in Comparative Example 2. Regarding the characteristics of the solar cell, for example, 1> The value of 111 was improved by 2.7% in Comparative Example 2 relative to Comparative Example 2, and the relative Comparative Example 2 in Example 4 was improved by 3.0%. » Regarding the amount of paste used, the comparative example 2 in Example 3 was reduced by 1%. Example 4 The relative comparative example 2 can be reduced by 3%. By setting the step in the ore dressing portion 33 of the screen, if the thickness of the ore portion 33 on the front end side of the sub-electrode pattern is thinner than the sub-gate electrode The length of the pattern is such that the thickness of the plated pig portion 33 near the heart is narrower in the width of the sub-electrode electrode 3 of the sub-electrode. The distance from the silver paste through the mineral deposit is shortened 162473.doc -19· 201242043 Therefore, the silver paste will be better passed through the screen. Therefore, it is possible to prevent the printing of the white portion of the narrow portion of the sub-gate electrode 3, and to form the sub-gate having a narrow width at the end portion. The electrode 3 is thereby increased in solar light from the illuminating surface of the battery, and the characteristics of the solar cell are improved. Even in the present embodiment, the shape of the thickness direction of the sub-gate electrode 3 is not a taper but a step. This effect can still be obtained. In addition, in order to effectively obtain the effect, the formation The thickness of the plated foil portion 33 at the front end of the gate electrode 3 is preferably a plated foil portion 33 which forms the center in the longitudinal direction of the sub-gate electrode 3 (for example, the sub-gate electrode 3 between the collector 2 and the collector 2). The thickness of the thickness is not more than 0.99 times, and more preferably the thickness of the plating portion 33 forming the center of the length direction of the sub-gate electrode 3 is more than 2 times 〇 7 times or less. The narrower portion of the width of the electrode 3 is formed to be thinner, so that the amount of the paste which can be used to form the silver electrode on the light-receiving surface side is reduced. In addition, no new equipment can be introduced, and the configuration of the screen can be changed to form the present. In the embodiment 3 to 4, the screen yarn of the diameter 25 (four) is used for the screen, but it is needless to say that the screen yarn is not limited to the specification β <Embodiment 3> In the third aspect, another example of the printing step and the drying step of the silver paste for the electrode of the reporter, 闽Λ a η for forming the light-receiving side of the step S5 of Fig. 2 is shown. In the present embodiment, as a screen for screen printing silver paste, a screen (screen) 41 having a suspended metal mask (mask member) is used. Screen 4ι^ Use the screen yarn and only form the male 1~ into the screen. As the material of the screen 41, Ni-based metal is mainly used, and stainless steel or copper alloy can also be used. As a cover 162473.doc •20. 201242043 The member has a screen with a metal mask. Due to its high durability, it can increase the number of uses of the screen, has excellent dimensional stability, and has a suspended metal mask as a mask member. The screen version has the advantages of better paste permeability and the like. On the other hand, since the metal mask is not supported by the screen yarn in the screen which is provided with the metal mask as the mask member, it is difficult to form the island portion such as a suspended pattern using the screen. Therefore, it is difficult to form an electrode such as the collector 2 and the sub-gate electrode 3 orthogonally using a screen having a metal mask as a mask member, and it is necessary to separately separate the printed collector 2 and the sub-gate electrode 3, and the like. . In the present embodiment, the sub-gate electrode 3 is formed by screen printing using a screen 41, and a screen having a cantilever metal mask is used as the mask member screen printing collector 2. Fig. 5(a) is a plan view of the screen 41 viewed from above, Fig. 5(b) is a cross-sectional view of the VB-VB line in Fig. 5 (Fig. 5(c), Fig. 5(b) An enlarged view of the vc region is shown. The screen 41 includes a Ni plate portion 43. The Ni plate portion 43 functions as a mask member and has an electrode pattern corresponding to the sub-gate electrode 3. Specifically, the Ni plate portion 43 An opening portion having the same shape as the planar shape of the sub-gate electrode 3 (corresponding to a sub-gate electrode pattern) is formed on the N1 plate portion 43 by forming a film on the Ni plate portion by a knife The opening portion 43 of 43 is printed on the upper surface of the p-type slab substrate 24 (the p-type slab substrate 24 is disposed below the counter 43). As in the above embodiment, the sub-gate 3 is printed.研九' β Haizi gate electrode 3 includes a tapered shape 4 in which the electrode width is narrowed as the self-collector 2 approaches the front end of the sub-gate electrode 3, and the sub-gate electrode 3 is located between the tantalum electrode 2 and the collector 2. Width and thickness of solid / / I62473.doc 21 201242043 The shape of the gate electrode pattern formed on the screen 41 by the tapered shape of the sub-gate electrode 3 A tapered shape in which the electrode width is changed in accordance with a force close to the sub-gate electrode pattern. Further, a step is set in the Ni plate portion 43, and the Ni plate portion 43 on the front end side of the sub-gate electrode pattern is placed. The plating thickness is the thickness of the plating of the Ni plate portion 43 in the vicinity of the length direction of the sub-gate electrode pattern. The spoon portion of the Ni plate portion 43 is such that the N1 plate portion 43 is fixed by using 1 nickname sandpaper. The pressure is applied to the front end portion of the sub-gate electrode pattern only a plurality of times so that the front end portion of the sub-gate electrode pattern is formed to have a desired thickness. Further, the Ni plate portion 43 can be formed by other grinding methods. Further, in the case where the screen member of the screen is a metal plate, the mask member is formed in such a manner that the thickness of the mask member is continuously thinned from the vicinity of the center of the length direction of the sub-gate electrode pattern toward the front end, and the processing requires a large amount of processing. By setting a step on the way from the vicinity of the center of the longitudinal direction of the sub-gate electrode pattern to the front end, the mask member is formed in such a manner that the thickness of the mask member is discontinuously thinned, and the processing is easy. Length of electrode pattern The thickness of the Ni plate portion 43 near the center and the thickness of the Ni plate portion 43 in the vicinity of the collector pattern are d21, and the thickness of the Ni plate portion 43 at the front end of the sub-gate electrode pattern is d22, and the light-receiving surface is formed by d22. The side silver electrode and the obtained solar cell 0 are shown below, and the sub-gate electrode pattern of the electrode width 'screen 41 of the vicinity of the center in the longitudinal direction of the sub-gate electrode pattern of the screen 41 of Examples 5 to 6 and Comparative Example 3 is shown. The electrode width at the front end, d2 丨 and d22. Further, in Comparative Example 3, the thickness of the dam portion 43 was fixed in the longitudinal direction of the sub-gate electrode pattern. I62473.doc -22·201242043 Example 5: Center: Electrode width / Ni plate thickness (d2 1) - 75 μηι / 40 μηι Front end: electrode width / Ni plate thickness (d22) - 65 μηη / 20 μηι Example 6: Center: electrode width / Ni plate thickness (d2 1) - ·75 μηη/40 μηι Front end: electrode width/Ni plate thickness (d22)—>60 μηι/20 μπι Comparative Example 3: Center: Electrode width/Ni plate thickness (d2 1) —75 μηι/40 μηι Front end: Electrode Width/Ni plate thickness (d22)—·65 μηι/40 μηι According to the above conditions, the silver side of the light receiving surface is formed. Pole, making the solar cell 1 shown in FIG. 1 in accordance with the production process shown in the FIG. 2. Moreover, the characteristics of the obtained solar cell were evaluated. The results are shown in Table 3. 162473.doc 23- 201242043 [Table 3] Usage of paste 0.99 0.95 1.00 Characteristic B 〇, 1.023 1.025 i _1 1.000 Uh Uh 1 i 1.034 1.032 1.000 Voc 0.999 1.000 1.000 0.991 0.993 1.000 Pattern status after printing on the front < < « After calcining sub-array · pole electrode I Thickness direction shape 1 step (2nd order) Step (2nd order) Fixed plane shape 1 Conical tapered cone electrode thickness [μιη] Ό 1 Electrode width [μηι] 00 S 1 Electrode thickness [μηι] 〇 \ ON 1 Electrode width 幽 design value Sub-gate electrode front Ni plate thickness [μηι] 〇 electrode width [μηα] y Ni plate thickness [μηι] ο 〇〇 electrode width [μιη] In Example 5 Example 6 Comparative Example 3 162473.doc -24- 201242043 In Table 3, the center and the front end are as shown in Table i, and the thickness of the plate means the thickness of the plate portion 43. In Table 3, JSC, Voc, FF & Pm are shown in Table 。. The Jsc value, the V〇e value, the FF value, and the Pm value of Table 3 are ratios of the comparative example 3iJsc value, v〇c value, FF value, and Pm value, respectively. Further, the amount of the paste used in Table 3 was also the ratio of the amount of the paste used in Comparative Example 3. Moreover, the pattern state after printing at the front end of Table 3 shows the state of the pattern after the printing of the front end of the gate electrode 3, and the "A" and "B" of Table 3 are as shown in Table 1, as shown in Table 3. In any of Embodiments 5 to 6, the sub-gate electrodes 3 are formed in a shape corresponding to the shape of the sub-gate electrode pattern formed on the screen 41. Specifically, the planar shape of the sub-gate electrode 3 is a tapered shape in which the electrode width is narrowed toward the front end of the sub-gate electrode 3. Further, the shape of the sub-gate electrode 3 in the thickness direction is formed in a step shape of two steps (corresponding to Table 30, "Thickness in the thickness direction" is "step (2nd order)"). Further, as shown in Table 3, in the state of the pattern after the printing of the front end, any of Examples 5 to 6 was good, but partial whitening occurred in Comparative Example 3. Regarding the characteristics of the solar cell, for example, with respect to the pm value, the comparative example 3 in Example 5 was improved by 2.3%, and the comparative example 3 in Example 6 was improved by 2.5%. Regarding the amount of paste used, the amount of the comparative example 3 in Example 5 was reduced by 1 ° / 〇. In Comparative Example 6, the comparative example 3 was reduced by 5. /〇. By setting a step in the Ni plate portion 43 of the screen 41, the thickness of the front plate side 43 of the sub-gate electrode pattern is made thinner than the Ni plate portion 43 near the center of the longitudinal direction of the sub-gate electrode pattern. The thickness of the sub-gate electrode 3 is narrower, and since the distance of the silver paste passing through the plate portion 43 is shortened, the I62473.doc •25·201242043 silver paste will become better through the screen. . Therefore, it is possible to prevent the printing of the white portion of the portion of the sub-gate electrode 3 having a narrow width, and to form the sub-gate electrode 3β having a narrow width of the front end portion, thereby being incident on the light receiving surface of the solar cell. As the light increases, the characteristics of the solar cell increase. Even if the shape of the sub-gate electrode 3 in the thickness direction is not a tapered shape but a step shape as in the present embodiment, this effect can be obtained. Further, in order to effectively obtain the effect, the thickness of the plate portion 43 forming the front end of the sub-gate electrode 3 is preferably the center of the length direction of the sub-gate electrode 3 (for example, the sub-gate between the collector 2 and the collector 2). The thickness of the Ni plate portion 43 of the electrode 3) is 〇丨 or more and 〇% or less, and more preferably 2 times or more the thickness of the state plate portion 43 forming the center of the longitudinal direction of the sub-gate electrode 3 〇·7 Less than the following. Further, since the narrow portion of the sub-gate electrode 3 is formed to be thin, the amount of paste used to form the silver electrode on the light-receiving surface side can be reduced. In addition to this, it is possible to form the light-receiving side silver electrode of the present embodiment by changing the structure of the screen without introducing a new device. <Examples of Other Shapes of Sub-Gate Electrode 3> In the above-described Embodiments 1 to 3, in order to increase the incident light intensity toward the solar cell, the planar shape of the sub-gate electrode 3 is made to be close to the front end. The tapered shape is narrowed to form the sub-gate electrode 3 by a screen printing method. Further, in order to prevent the whitening of printing, the thickness of the sub-gate electrode 3 on the front end side of the sub-gate electrode 3 is thinner than the thickness of the sub-gate electrode 3 near the center in the longitudinal direction of the sub-gate electrode 3. In the manner, the sub-gate electrode 3 is formed by a screen printing method. However, in order to obtain an effect of increasing the intensity of the incident light toward the solar cell and preventing the whitening of the printing, the shape of the thumb electrode 3 is not limited by the shape of the above-described embodiment 3 of 162473.doc •26·201242043. Figs. 6(a) to 6(g) are views showing an example of a planar shape of the sub-gate electrode 3 and an enlarged view of a region of the figure (10). In the sub-salt electrode 3 shown in the circle 6 (4), the width of the sub-gate electrode 3 is reduced by a fixed ratio as it approaches the front end of the sub-gate electrode 3 and the sub-gate electrode 3 shown in FIG. 6 (4) has the above The shape of the thumb electrode 3 of the embodiment 3 is the same shape. In the sub-gate electrode 3 shown in Fig. ,, as the front end of the sub-gate electrode 3 is approached, the reduction ratio of the width of the sub-gate electrode 3 becomes larger, and in the sub-gate electrode 3 shown in Fig. 6 (4) As the front end of the sub-gate electrode 3 is approached, the reduction ratio of the width of the sub-gate electrode 3 becomes small. In the sub-gate electrode 3 shown in FIG. 6(d), the width of the sub-gate electrode 3 is a portion where the sub-gate electrode 3 extends from the collector electrode 2 (hereinafter referred to as "the root of the sub-gate electrode 3". ) is fixed to the middle of the sub-gate electrode in the direction of the heart, and then is reduced by a fixed ratio as it approaches the front end of the sub-gate electrode 3. In the sub-gate electrode 3 shown in FIG. 6 (4), the width of the sub-gate electrode 3 is fixed from the root portion of the sub-gate electrode 3 to the sub-gate electrode degree direction, and thereafter, as the sub-gate electrode 3 is approached The reduction rate of the width of the front-end sub-gate electrode 3 becomes large. In the electrode 3 shown in Fig. 6(f), the width of the sub-gate electrode 3 is gradually narrowed as it approaches the end of the sub-gate electrode 3. In the sub-gate electrode 3 shown in FIG. 6(g), the width ' of the sub-gate electrode 3 is as narrow as the peak of the mountain near the sub-gate electrode L as in FIG. 6(1) and is in each step. The enthalpy of the sub-gate electrode 3 is approached. In the sub-gate electrode 3 which is not in the sub-gate electrode 3 and the figure shown in FIG. 6(f), the order of the steps is not limited to the third order, and may be the second order 'may be the fourth order. the above. Further, in the sub-gate electrode 3 162473.doc -27· 201242043 shown in FIG. 6(f), the electrode width of the side of the sub-gate electrode 3 is opposite to the electrode width of the root of the sub-gate electrode 3. The ratio is not particularly limited, and the ratio of the electrode width of the front 4 side of the sub-gate electrode 3 to the electrode width of the center side of the sub-gate electrode 3 is not particularly limited. This is also the same in the gate electrode 3 of Fig. 6(g) " In the sub-electrode electrode 3 shown in FIGS. 6(4) to 6(g), the area occupied by the thumb electrode 3 in the light-receiving surface of the p-type germanium substrate 24 can be reduced, so that the solar cell can be increased. The intensity of the incident light. 7(a) to 7(g) are views showing an example of a cross-sectional shape of the sub-gate electrode 3, and correspond to an enlarged cross-sectional view of a circular domain. 7(4) to (B), a P-type germanium substrate 24 (not shown in FIGS. 7(4) to (g)) is provided on the lower side of the collector 2 and the sub-gate electrode 3. The sub-electrode electrode 3 shown in (4) As the front end of the sub-gate electrode 3 is oriented, the thickness is reduced by a fixed ratio, and the sub-gate electrode 3 not shown in FIG. 7(4) has the same shape as the sub-gate electrode 3 of the above-described embodiment! As shown in the sub-gate electric (10), as the front end of the gate electrode 3, the thickness reduction rate becomes larger, and in the gate electrode 3 of the dice in FIG. 7(c), the front end faces toward the sub-gate electrode 3 The reduction ratio of the thickness becomes small. In Fig. 7(d), the electric gate ..... in the gate electrode 3, the sub-gate household: Φ the root of the gate electrode 3 to the length of the sub-gate electrode 3 is fixed in the middle Then, as the ratio toward the sub-bend = is reduced, the thickness of the sub-gate electrode 3 shown in the sub-gate:: h is from the root of the sub-gate electrode 3 to the length of the sub-length of the cold spring κι-€ pole 3 After the end of the 'sub-gate electrode 3, the reduction rate of the thickness of the sub-gate electrode 3 becomes larger. The sub-t62473.doc -28- 2012420 shown in Fig. 7(f) Before 43: The thickness of the gate electrode 3 is thinner toward the sub-gate electrode 3 = (4). Figure 7 (in the sub-gate electrode 3 shown, the thickness of the sub-gate is the same as that of Figure 7(f). Towards: while the stage is thinning' and at each step with the direction of the child's thumb electrode 3: the early thumb of the thumb electrode 3 and the electrode of the electrode 3 shown in Fig. 7(g) The thickness of the center side of the sub-gate electrode 3 in the sub-gate electrode 3 shown in FIG. 7 (7) is not limited to the third order, and may be 4 or more. Further, the thickness of the center side of the sub-gate electrode 3 in the sub-gate electrode 3 shown in FIG. 7 (7) is opposite to the root of the sub-gate electrode 3. The ratio of the thickness of the side is not particularly limited, and the ratio of the thickness of the front end side of the sub-gate electrode 3 to the thickness of the center side of the sub-gate electrode 3 is not particularly limited. This is shown in FIG. 7(g). The same applies to the electrode 3. In the sub-tear electrode 3 shown in Figs. 7(a) to 7(g), the thickness of the front end side of the sub-electrode electrode 3 is thinned, in other words, the electrode width is narrow. The thickness of the partial sub-gate electrode 3 is thinned, so that the printing of the sub-gate electrode 3 of the portion where the electrode width is narrow can be prevented from being whitened as shown in Fig. 6 (4) to (g) and Fig. 7 described above. In the shape of the planar shape and the thickness direction of the sub-gate electrode 3 of the present invention, various shapes can be considered, and the shapes of the planar shape and the thickness direction can be freely combined as the shape of the sub-electrode electrode 3, as shown in FIG. And the same effect can be exerted regardless of the combination (the intensity of the light emitted by the person facing the solar cell can be increased, and the printing of the sub-electrode electrode 3 can be prevented from being whitened). Moreover, the sub-gate electrode for screen printing such a shape is used. The screen version of 3 can be used for the purpose of the invention. In addition, the sub-gate electrode 3 is used to collect the photocurrent generated in the solar cell as much as possible without loss. To the sub-gate 162473.doc • 29- 201242043 The root portion of the electrode 3, so that at least the root portion of the sub-gate electrode 3 should be thick. In the above-described embodiment, a different type of screen is displayed. Even if the type of the screen is different, if the shape of the gate electrode pattern of the screen has a special shape of t; specifically, even if the type of the screen is different, if the shape of the gate electrode of the screen has the shape of FIG. 6(a) When any of the planar shapes of any of (g) and (7) to (8) has a cross-sectional shape of any of FIGS. 7(4) to (8), the intensity of incident light toward the solar cell can be increased, and the printing of the sub-gate electrode 3 can be prevented from being whitened. In the above-described Embodiments i to 3, the sub-gate electrode 3 located between the collector 2 and the collector 2 has a fixed electrode width. Then, even if the width of the sub-gate electrode 3 located between the collector 2 and the collector 2 is narrower and narrower from the collector 2, and the sub-gate electrode 3 between the collector 2 and the collector 2 is made The thickness of the collector electrode 2 is as thin as possible, and the effect of increasing the incident light toward the solar cell and preventing the whitening of the printing of the sub-gate electrode 3 can be obtained. Further, in a solar cell having only an electrode for collecting a carrier generated by incident light, the width of the electrode may be narrowed toward the front end of the electrode, and the thickness of the electrode may be reduced. Thereby, it is possible to obtain an effect of increasing the intensity of the incident light toward the solar cell and preventing the whitening of the printing of the sub-gate electrode 3. Further, the material of the light-receiving side silver electrode 4 is not limited to the silver paste. Even when the light-receiving side silver electrode 4 is produced using a conductive paste different from the silver paste such as aluminum paste, the effects obtained in the above embodiments i to 3 can be obtained. 162473.doc -30- 201242043 Further, in the back side electrode type solar cell in which only the electrode is formed on the back side, the screen of the present invention can be used when the back side electrode is formed, and even in this case, The effects obtained in the above embodiment 3 are obtained. Further, the material constituting the member of the screen in the present invention is not particularly limited. Further, in the present invention, the method of producing the member of the solar cell other than the electrode is not particularly limited. Further, in the present invention, the material constituting the member of the solar cell and the thickness of the member constituting the solar cell are not particularly limited. The member constituting the solar cell includes a type 11 impurity or a type 13 impurity. The material of the n-type impurity and the p-type impurity is not particularly limited, and the solar electric concentration and the p-type impurity concentration are not particularly limited. The embodiments and examples disclosed herein are not intended to be exhaustive or limiting. The scope of the present invention is indicated by the scope of the claims, and the scope of the invention is intended to cover all modifications within the scope and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view of the present invention as seen from the side of the light receiving surface. Figure 2 is a flow chart showing the present invention in order of steps. Illustrated Fig. 3 is a plan view, a cross-sectional view, and a plan view of a screen having a mask member including an emulsion, and a plan view of the screen of the mask. 162473.doc -31 - 201242043 Figure 5 is a top view, a cross-sectional view and an enlarged view of a screen with a metal mask. Figure 6 is a plan view of the front end portion of the sub-gate electrode of the present invention. Figure 7 is a cross-sectional view showing the front end portion of the sub-gate electrode of the present invention. Fig. 8 is a cross-sectional view showing an example of the configuration of a prior solar cell. Fig. 9 is a plan view showing the solar cell shown in Fig. 8 as seen from the light-receiving side. Top view of the solar cell Fig. 10 is a perspective view showing an example of the figure shown in Fig. 8 from the back side. Fig. 11 is a view showing the constitution of a prior solar cell. Fig. 12 is a cross-sectional view for explaining a screen printing method. Figure 13 is a plan view and a cross-sectional view of a prior art screen. [Description of main components] 1 Solar cell 2 Collector 3 Sub-shed and pole electrode 4 Light-receiving side silver electrode 21 Screen 22 Screen yarn 23 Emulsion part 24 P-type 矽 substrate 31 Framed by a floating metal mask 32 Screen Yarn 33 Ni-plated foil portion 162473.doc • 32· Screen version 201242043 41 Made of metal mask 43 Ni plate portion 101 Solar cell 102 p-type germanium substrate 103 n-type diffusion layer 104 anti-reflection film 105 collector electrode 106 BSF layer 107 aluminum electrode 108 back side silver electrode 109 sub-gate electrode 110 light-receiving side silver electrode 201 screen 202 paste material 203 doctor blade 204 platform 205 substrate 301 germanium-type semiconductor substrate 302 n-type semiconductor layer 303 germanium-type semiconductor Layer 304 Light-receiving electrode 305 Surface Main electrode 306 Back electrode 401 Screen 162473.doc .33· 201242043 402 Screen yarn 403 Emulsion part 404 Broken substrate dl Thickness d2 Thickness d3 Thickness dll Thickness dl2 Thickness d22 Thickness d21 Thickness I62473.doc • 34