TW201241230A - Vapor deposition apparatus - Google Patents

Vapor deposition apparatus Download PDF

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TW201241230A
TW201241230A TW101104658A TW101104658A TW201241230A TW 201241230 A TW201241230 A TW 201241230A TW 101104658 A TW101104658 A TW 101104658A TW 101104658 A TW101104658 A TW 101104658A TW 201241230 A TW201241230 A TW 201241230A
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substrate
phase growth
laser light
mounting table
state
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TW101104658A
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TWI515329B (zh
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Akira Yamaguchi
Akinori Ubukata
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Taiyo Nippon Sanso Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Description

201241230 六、發明說明： 【發明所屬之技術領域】 本發明有關於-種氣相成長裝置，詳而言之，特別有關於 使基板自公轉’同時以利用有機金屬之熱分解反應之化學反 應’在蠢晶成長薄膜之自公轉型之氣相成長裝置。 【先前技術】 -次可對多片基板進行氣相成長之氣相成長裝置，已知有 一種自公轉型之氣相成長褒置(例如’參照專利文獻丨），在 公轉載置台之外周部周方向配置複數之自轉載置台，並在該 自轉載置台之外周部設置軸承和外齒輪，使設在反應容器 (處理至）内面之固疋内齒輪和上述外齒輪咬合，以使成膜中 之基板自公轉。另外，當在成膜中之基板發生翹曲時，由於 基板之加熱狀態進行變化，或氣體之流動進行變化，會大幅 地影響所製成之薄膜之品質。特別是在以利用有機金屬之熱 分解反應之化學反應，進行磊晶成長之MOCVD法，已知 是基板面之稍微之溫度差對品質造成很大影響。因此，觀察 成膜開始前之基板狀態，進行確認基板本身是否翹曲，及是 否因灰塵而造成基板之浮起（例如，參照專利文獻2)。 [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開2007-266Π1號公報 [專利文獻2]曰本專利特開2005-5552號公報 101104658 3 201241230 【發明内容】 (發明所欲解決之問題） 置:;二t專利文獻2所記載之技術中，因為使位置測定裝 仃捌定，因而移動時在位置測定I 之偏差，欲進行高精確度之測定會有_。聚置會產生梢微 因此，本發明之目的係提供一種具備有 基板㈣和傾斜狀態之測定手段之氣相成長裝问置精確度測疋 (解決問題之手段） 之目的’本發明之氣相成長農置係在自公轉型 =2置中，具備有:圓盤狀之載置台，設在處理室 台之外周m，魏之基㈣㈣件，料㈣設在該载置 為可旋轉；圓形之基_持凹部，設在 二=保持構件之表面；原料氣體導人部，自上述處理室之 部，、二將原料氣體放射狀地導入到載置台表面側；排氣 括m、述處理室之外周部；及加熱手段，用以加熱被保 ，，、基板保持凹部之基板；隨著上述載置台之旋轉使上 二板保持構件自公轉，同時自上述原料氣體導人部將原料 孔體導入到载置台表面側，並在藉由上述加熱手段加熱之基 板面使4膜氣相成長；其特徵在於：在f史於上述處理室之雷 射光透過部外面’固定有測定手段，_定手段具備有：雷 射光源對被保持在上述基板保持凹部且利用上述載置台之 方疋轉進竹自公轉之基板面，於垂直方向連續地照射雷射光. 101104658 201241230 及受光部，用以接收被基板面所反射之雷射光；同時具備有 判定手段’當以上述受光部所接收光之反射光之變動量大於 預先設定之變動量時，判定上述基板為異常爿大&。 另外，本發明之氣相成長裝置其特徵在於：上述雷射光源 之雷射光光轴係配置在通過自公轉之基板中心之執跡上；上 述基板保持構件之轉速係相對於上述載置台之轉速而吸定 為非整數倍；上述判定手段具備有警報產生手段，合判定為 基板有異常狀態時用以發出警報；另外，上具備 有記憶手段，在基板面使薄膜氣相成長之前及在& 薄 膜氣相成長之後，判定基板之狀態，並且八0, ^ 刀別記憶氣相成長 前後之判定結果。 (發明效果） 依照本發明之氣相成長裝置時，由於、 受光部被固定在設於處理室之雷射光透 雷射光源和 光照射在自公轉之基板，並利用來自之狀態’使雷射 卷板面之反射先妝能划 定基板狀態，因而雷射光源和受光部 町元狀態判 位置不會偏差，可 穩定之狀態進行正確之測定。另外，姑丄 ^ & 鉍由將光軸配置在基板 中心之軌跡上，可使照射在基板面之赴&， 〜由射光轨跡變長，同時 可以基板中心作為基準點，判定基柘 紙之狀態。另外，經由使 基板保持構件之轉速係相對於載置& 之轉速而設成為非整 數倍’在載置台旋轉1圈而使基板创4 + a 炊到達雷射光之照射位置 時，因為基板角度在每一次旋轉成為 同角度，所以可在基 101104658 5 201241230 板之複數位置進行測定，可更確實地以高精確度測定基板之 狀態。 【實施方式] 本形態例所示之氣相成長裝置是在圓盤狀之載置台11上 面可載置6片基板12之多片自公轉型氣相成長裝置，載置 台11係設置成可在圓筒狀之處理室13之内部旋轉。在載置 台11下面中心部，旋轉軸14在該旋轉軸14周圍分別設有 經由載置台11用以加熱基板12而作為加熱手段之加熱器 15，及用以測定加熱溫度之溫度計16，在加熱器15下方和 周圍以反射板17覆蓋。在流動通道13之頂板中央，原料氣 體導入部18呈開口，在底板外周設有排氣口 19。 基板12係保持在上面具有基板保持凹部20之圓盤狀基板 保持構件(基板托盤)2卜基板保持構件21係透過由碳或陶 瓷形成之複數之轉動構件22，而分別支持於圓盤狀之導引 構件23 |引構件23係保持在以等間隔設在载置台u周 方向之導引構件保持㈣lla内。另外，在基板保持構件 21外周下部紗外齒輪％，在載置台1丨外周位置設 =齒輪構件26，咖定餘構件26具有㈣輪Μ而斑 =板保持構件之外齒輪24咬合。另外，設有蓋巧、 =固定齒輪構件26上方、内齒輪25和 上 方、及戴置台η中央部上面，使該蓋構件 上 101104658 持凹部2G之外周部上面、和基板12之上面成為同—土面板保
S 201241230 當對基板12進行氣相成長時，使旋轉軸14以既定速度旋 轉，則使載置台11與旋轉軸14成為—體並進行旋轉，隨著 該載置台11之旋轉，除了固定齒私 面輪構件28外，各個構件亦 旋轉，基板12係以載置台11之車 〜竿由線作為中心進行旋轉，亦 即成為公轉狀態。另外，經由使外絲24與較齒輪構件 26之内齒輪25咬合，基板保持構件21係以該基板保持構 件之軸線作為中心進行旋轉，亦即成為自轉狀態。藉此， 保持在基板保持構件21之基板12，成為以載置台u之轴 線作為中心進行自公轉。 依照此種方式使基板12自公轉，且從加熱器15透過載置 台11等將基板12加熱到既定溫度，例如，u〇〇t：，在此種 狀態從原料氣體導入口 18將既定之氣相原料，例如，三甲 基鎵和氨導入到流動通道13内，藉此可在複數之基板12 表面均一地堆積既定薄膜。 在以不銹鋼形成之處理室13之頂板13a，設置有由雷射 光可透過之石英玻璃所形成之雷射光透過部13b，在該雷射 光透過部13b外面，在本形態例中為頂板13a上面固定有基 板狀態判定器31。在該基板狀態判定器31組入有：測定手 段’其具備有用以對基板面照射雷射光之雷射光源、及用以 接收基板面所反射之雷射光之受光部；及判定手段，根據以 上述受光部所接收之反射光狀態，判定基板狀態。 上述雷射光源係配置成使來自該雷射光源照射之雷射光 101104658 7 201241230 之光軸相對於用以形成薄膜之基板面呈垂直方向，位於自公 轉之基板12之中心12a通過之執跡上。另外，上述受光部 係設在可接收自該雷射光源照射而在基板面反射之反射光 之位置’因而即使因基板面傾斜顿反射光之光㈣斜時， 亦形成可在預先設定之傾斜範圍内受光。 另外’基板保持構件21之轉速相對於載置台^轉速係 設定為非整數倍，當載置台11旋轉！圈時，基板保持構件 21之方向設定為在載置台11之旋轉前和旋轉後成為不同方 向。例如，内齒輪25之齒數為36〇齒、外齒㈣ 5〇齒，則當載置台11旋轉1圈時，基板保持構件21變^ 旋轉7.2圈，载置台11每旋轉1圈時，基板保持構件21之 方向變成偏移72度°如此’藉由將兩者之轉速比設定為非 整數倍’可使雷射細射在通過基板狀態判定器Η下方鱼 基板面不同的位置。 一' 在以此種方式形成之氣相成長裝置中，在將基板η 安裝在基板保持構件21之基板保持凹部2〇之狀離下: 置台η旋轉同時使基板狀態判定器31動作，則使雷射T 序照射在通過基板狀態判定器31 τ方之各基板面1 乂 部接收反槪對縣们2之觸輪餘態之方: 光，利用判定手段判定基板之狀態為正常或異常。 ， 在將基板保持構件21之轉速相對於載置台u之 定為非整數倍時，則如圖3所示，相對 逮而认 肢第射光照 101104658
S 201241230 射位置之轨跡（以下，稱為掃描位置）Si，使第2次之掃描位 置S2、第3次之掃描位置S3、第4次之掃描位置S4，分別 通過基板面之不同位置’以受光部接收對應各掃描位置之基 板面狀態之反射光，根據各掃描位置之各受光狀態，判定基 板12狀態。 在使用雷射距離感測器作為基板狀態判定器3 1之情況 時’在各掃描位置，當描繪從基板12 一方之外周緣起點Sa， 通過基板中心12a至另一方之外周緣終點Sb之距離時，則 成為圖4所示之狀態。另外，圖4中，係使一部分之線平行 移動，而可輕易地進行說明。 在圖4(A)之情況，各掃描位置S1〜S4中，因為起點Sa、 基板中心12a、起點Sb之距離大致相等，因而可了解基板 面呈平行。在中途形成-些凹凸是由於基板自轉時之機械振 動所帶來的影響。該機械振動之影響隨著裝置構造或旋轉系 之设計而有很大差異。如上述之方式，在利用齒輪使基板自 公轉之機構的情況時’成為機械驅動卵之基板面振動約為 凹凸30μιη左右。另外，將基板面之微分值平均化後之值 L1〜L4顯示成為大致相同值，其誤差為士3μιη以下。對成膜 ^有不良衫響之粒子其粒子直徑為數1〇μιη，因而教示本檢 查方法可充分地適用。 另外一方面，在圖4⑻之情況，與裝填有並行平面之基 板無關地’在各掃描位置S1〜S4，從起點Sa經由基板中心 1〇1104658 201241230 12a朝向起點Sb之距離大致相等之狀態’距離逐漸變短之 狀態’距離逐漸變長之狀態，0為各微分之平均值Li, 之傾斜不同，所以可判斷基板面為平面而呈傾斜。從傾斜方 向與其他不同之L4和L1之斜率所求得之基板面之傾斜， 約為50降。此為粒子(灰塵）附著在基板背面使基板傾斜之 原因。清掃背面，再度裝填同-基板之結果發現，可獲得與 圖4(A)之情況同樣之資料。 ' 在圖4(C)之情況’使用預先附加有膜之「翹曲基板」。在 各掃描位置S1〜S4，因為在起點Sa距離變短，在基板中心 12a距離變遠，成為在起點Sb描繪距離變短之曲線之狀熊， 因而以基板中心12a為底使外周緣浮起之狀態，亦即表示基 板面翹曲成為凹形狀之狀態。當使用預先在基板成膜有膜之 基板’則利用基板面之翹曲形成此種資料。使各個曲線之微 分平均化，則成為如L1〜L4之虛線所示。因為不朝向與虛 線之傾斜方向相同之方向傾斜，所以表示基板以單—方向傾 斜之狀態進行自轉。從傾斜方向與其他不同之L3和L1之 斜率所求得之基板面傾斜約為200μπι。 與圖4(B)之情況同樣地清掃基板背面，再度檢杳同—美 板之結果發現，可獲得圖4(D)所示之資料。因為表 示相同之傾斜，故可判斷為背面之灰塵已被除去。 依照此種方式，安裝基板12使載置台11旋轉，同時利$ 基板狀態判定器31測定基板面之狀態，藉此可測定其^反@ 101104658
S 201241230 _之㈣ '基板_斜_ ’戶㈣縣設定㈣之變動量 之容許範圍，傾斜之變動量之容許範圍，在所測定之基板面 翹曲或傾斜超過容許範圍時，關定基板η為異常狀態。 例如，在基板保持凹部20和基板12之間爽住有灰塵而使基 板12傾斜之情況日㈣為判定結果，或圖4(C)戶斤米， 所以從基板保持凹部2G取出基板12，確認基板保持凹部2〇 和基板12之㈣’進行去除之灰塵之清掃作業，經由將基 板12再度地安裝在基板簡凹部2()，可以消除基板η之傾 斜狀態，可使基板12成為正常狀態，_成_作。另外， 在大幅超過容許範圍之編之基板12的情瞒，更換基板 12。可以消除基板12 之原料氣體之浪費之成膜操作。另外， 在^基板12之㈣為異常時’可藉由在基板狀態判定器 31設置使警報或警告燈等動作之警報功能，而將有異常發生 報知作業者，Μ確實地輯清掃彳讀絲板更換。 作為基板背面之灰紅狀鲜，最好是狀灰塵之粒徑 是否為「3〇μηΐ以上500卿以下」。灰塵之粒徑在3_以 下時’由於敎精確衫足會有不能充分判定之問題，另 外，在500μιη以上時，反射雷射光會反射到受光部之外， 會有不能測定之情況。如此，設定基板12而使栽置台U 旋轉’同時個基板狀態判定$ 31測定基板面之狀態，藉 此可把握基板面之翹曲狀態、基板面之傾斜狀態。 如此一來，在判定各個基板12為正常之後，使驅動上述 101104658 201241230 旋轉軸14之載置台11旋轉，使保持有基板12之基板保持 構件21自公轉，並且從原料氣體導入部18將原料氣體導入 到載置台表面側，在利用加熱器15加熱到既定溫度之基板 面氣相成長薄膜。 利用此種方式，因為不在大幅傾斜、大幅勉曲之基板12 進行氣相成長，所以玎有效地利用原料氣體，同時可在基板 面形成均質之薄膜，達成品質之提高和良率之提高。特別是 對於基板面之溫度差造成很大影響之MOCVD法中，可以 消除基板面之溫度分佈不均，可確保面内分佈之再現性，且 可有效率而穩定地獲得高品質之薄膜。 另外，因為將基板狀態判定器31固定在處理室13，所以 基板狀態判定器31與基板面之距離，或對基板面之角度不 會變動’可以經常進行正確之判定。 另外，藉由在進行氣相成長之前後分別判定基板之狀態， 並且分別使判定結果記憶在記憶手段，則在所形成之薄膜發 生有異常之情況時，可以輕易地判定基板之狀態是否為其原 因，可較先前技術輕易進行異常發生原因之追查。 另外，處理之基板片數和原料氣體之導入方法可以為任意 者，可適踩各種之氣相成絲置。料，作減板狀態判 定器之測定手段，可利用以雷射檢測距離和變位之市面上販 售之各種測定H ’可將具備有雷射光源和受光部之測定手段 與判定手段分開設置，可以連接各_示手段、印刷手段及 101104658 12
S 201241230 記憶手段。另外，在雷射光透部可以附加各種手段用來使雷 射光成為穩定狀態。 另外’在測定手段中經由設定成為使雷射光通過基板中 心’可確實地败別基板全體之狀態，但是^卩使在離開基板 中心之位置或通過接近基板中心之位置，亦可以某種程=地 得知基板面之狀態。另外，在絲储構件之轉速相對= 置台之轉速為複數倍時，雷射光通過基板面相同之位置，' 是即使在_情況時，亦可以某赫度地得知基板面之= 態。另外，在载置台旋轉丨圈時，於基板保持構件之方向偏 移⑽度之情況時，變成測定基板面之2個位置，在偏= 120度之情騎，變成敎基板面之3個位置，所以即使在 兩者之轉速之比絲輕數倍之情況時，最好設定成避開 移180度和120度之比。 【圖式簡單說明】
圖i係表林發明之氣相成長裝置之—形_之 視圖。 J 圖2是設定有基板之載置台之俯視圖。 圖3係表示基板面之雷射光之照射位置之執跡之說明圖。 圖4係表示由判定手則來判定之反射光之狀態 圖。 ” 【主要元件符號說明】 11 載置台 101104658 導引構件保持凹部 基板 基板中心 處理室 頂板 雷射光透過部 旋轉轴 加熱器 溫度計 反射板 原料氣體導入部 排氣口 基板保持凹部 基板保持構件 轉動構件 導引構件 外齒輪 内齒輪 固定齒輪構件 蓋構件 固定齒輪構件 基板狀態判定器
14 S

Claims (1)

  1. 201241230 七、申請專利範圍： 1·-種氣相成長裝置’係在自公轉型之氣相成長裝置中， 具備有·· ϋ餘之敍[設在處理室内為可旋轉； 之基板保持構件’等間隔地設在該載置台之外周部周方向成 為可旋轉，®形之基㈣持凹部，設在該基板㈣構件之 面，原料氣體導入部’自上述處理室之中央部，將原料氣體 放射狀地導人到載置台表面側；排氣部，設在上述處理室之 外周# ’及加熱手段，用以加熱保持在上述基板保持凹部之 基板’ Ik著上述載置台之旋轉使上述基板保持構件自公轉， 同時自上述原料氣體導入部將原料氣體導入到載置台表面 侧’並在藉由上述加熱手段加熱之基板面使薄膜氣相成長； ”特徵在於.在&於上述處理室之雷射歧過部外面，固定 有測定手段定手段具備有：雷射光源，對被保持在上 述基板保持凹部且利用上述載置台之旋轉進行自公轉之基 板面’於垂直方向連續地照射雷射光；及受光部，用以接收 基板面所反射之雷射光；同時具備有判定手段，當以上述受 光。卩所接收光之反射光之變動量大於預先設定之變動量 時，判疋上述基板為異常狀態。 2.如申請專利範圍第1項之氣相成長裝置，其中， 上述雷射光源係配置在使雷射光之光軸通過自公轉之基 板中心之執跡上。 3·如申請專利範圍第丨項之氣相成長裝置，其中， 101104658 15 201241230 上述基板保持構件之轉速係相對於上述載 置台之轉速而 設定為非整數倍。 4. 如申明專利範圍第2項之氣相成長裝置，其中， 上述基板保持構件之轉速係相躲上述載置台之轉速而 設定為非整數倍。 5. 如申°月專利範園第1至4項中任-項之氣相成長裝置， 其中， 上述判疋手段具備有警報產生手段，當判定為基板有異常 狀態時用以發出警報。 6. 如申明專利範圍第1至4項中任-項之氣相成長裝置， 其中， 上述判定手段具備有記龄段，在基板面使薄膜氣相成長 之前及在基板錢薄職相成長之後，判定基板之狀態，並 且分別s己憶氣相成長前後之判定結果。 7. 如申請專利範圍第5項之氣相成長裝置，其中， j述判定手段具備有記憶手段，在基板面使薄m氣相成長 之前及在基板岐薄職減長之後，判定基板之狀態，並 且分別記憶氣相成長前後之判定結果。 101104658
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