TW201240087A - Power device with boundary trench structure - Google Patents

Power device with boundary trench structure Download PDF

Info

Publication number
TW201240087A
TW201240087A TW100111040A TW100111040A TW201240087A TW 201240087 A TW201240087 A TW 201240087A TW 100111040 A TW100111040 A TW 100111040A TW 100111040 A TW100111040 A TW 100111040A TW 201240087 A TW201240087 A TW 201240087A
Authority
TW
Taiwan
Prior art keywords
trench
layer
boundary
layer body
transistor
Prior art date
Application number
TW100111040A
Other languages
English (en)
Chinese (zh)
Other versions
TWI489630B (enExample
Inventor
yong-fa Lin
shou-yi Xu
Meng-Wei Wu
Yi-Qun Shi
Mian-Guo Chen
Original Assignee
Anpec Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anpec Electronics Corp filed Critical Anpec Electronics Corp
Priority to TW100111040A priority Critical patent/TW201240087A/zh
Priority to CN201110220527.1A priority patent/CN102738142B/zh
Priority to US13/348,961 priority patent/US8890253B2/en
Publication of TW201240087A publication Critical patent/TW201240087A/zh
Application granted granted Critical
Publication of TWI489630B publication Critical patent/TWI489630B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW100111040A 2011-03-30 2011-03-30 Power device with boundary trench structure TW201240087A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW100111040A TW201240087A (en) 2011-03-30 2011-03-30 Power device with boundary trench structure
CN201110220527.1A CN102738142B (zh) 2011-03-30 2011-08-01 具有边界沟槽结构的功率元件
US13/348,961 US8890253B2 (en) 2011-03-30 2012-01-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100111040A TW201240087A (en) 2011-03-30 2011-03-30 Power device with boundary trench structure

Publications (2)

Publication Number Publication Date
TW201240087A true TW201240087A (en) 2012-10-01
TWI489630B TWI489630B (enExample) 2015-06-21

Family

ID=46926084

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100111040A TW201240087A (en) 2011-03-30 2011-03-30 Power device with boundary trench structure

Country Status (3)

Country Link
US (1) US8890253B2 (enExample)
CN (1) CN102738142B (enExample)
TW (1) TW201240087A (enExample)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2919659B2 (ja) * 1991-10-29 1999-07-12 三洋電機株式会社 絶縁ゲート形電界効果トランジスタの製造方法
US7638841B2 (en) * 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
WO2005065385A2 (en) * 2003-12-30 2005-07-21 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
WO2006113573A1 (en) * 2005-04-15 2006-10-26 Advanced Technology Materials, Inc. Apparatus and method for supercritical fluid removal or deposition processes
JP5280861B2 (ja) * 2006-01-19 2013-09-04 エーエスエム アメリカ インコーポレイテッド 高温ａｌｄインレットマニホールド
EP2109879A4 (en) * 2007-01-09 2011-05-18 Maxpower Semiconductor Inc Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
CN102738142A (zh) 2012-10-17
US20120248540A1 (en) 2012-10-04
CN102738142B (zh) 2015-08-12
TWI489630B (enExample) 2015-06-21
US8890253B2 (en) 2014-11-18

Similar Documents

Publication Publication Date Title
TWI572037B (zh) 電晶體裝置及其形成方法
JP5641131B2 (ja) 半導体装置およびその製造方法
TWI731841B (zh) 改良之氮化鎵結構
CN105702677B (zh) 用于高浪涌和低电容的tvs结构
US10892360B2 (en) Semiconductor device structure with high voltage device
TWI637520B (zh) 半導體器件
KR20110100021A (ko) 반도체 장치
TW201546997A (zh) 暫態電壓抑制元件及其製造方法
TW200922067A (en) Transient voltage suppressor manufactured in silicon on oxide (SOI) layer
TW200426980A (en) Semiconductor device, method of manufacturing semiconductor device, and method of evaluating manufacturing process of semiconductor device
TW201232760A (en) Semiconductor device and fabrication method thereof
KR20130132216A (ko) 고전압 애플리케이션용 임베디드 ＪＦＥＴｓ
TWI656639B (zh) 半導體器件及其形成方法
TW201601253A (zh) 具緊湊型互補式金氧半場效電晶體絕緣的積體電路及其製備方法
JP2015211140A (ja) 半導体装置
US8686509B2 (en) Semiconductor structure and method for manufacturing the same
JP2011082541A (ja) 半導体装置
CN102738142B (zh) 具有边界沟槽结构的功率元件
CN106206565B (zh) 二极管与二极管串电路
TWI567921B (zh) 功率開關元件
TWI235409B (en) Semiconductor device
TWI582947B (zh) 半導體結構與靜電放電防護電路
TW202025437A (zh) 用於側向電晶體裝置之靜電放電處理
JP4459213B2 (ja) サイリスタの駆動方法
TW201830697A (zh) 半導體基底結構及其形成方法和半導體裝置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees