TW201237955A - Wafer dicing method, mounting method, method for manufacturing adhesive layer, and mounted body wafer dicing method, mounting method, method for manufacturing adhesive layer, and mounted body - Google Patents

Wafer dicing method, mounting method, method for manufacturing adhesive layer, and mounted body wafer dicing method, mounting method, method for manufacturing adhesive layer, and mounted body Download PDF

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Publication number
TW201237955A
TW201237955A TW101107621A TW101107621A TW201237955A TW 201237955 A TW201237955 A TW 201237955A TW 101107621 A TW101107621 A TW 101107621A TW 101107621 A TW101107621 A TW 101107621A TW 201237955 A TW201237955 A TW 201237955A
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TW
Taiwan
Prior art keywords
wafer
adhesive layer
cutting
dicing
layer
Prior art date
Application number
TW101107621A
Other languages
Chinese (zh)
Inventor
Ryoji Kojima
Original Assignee
Sony Chem & Inf Device Corp
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Publication date
Application filed by Sony Chem & Inf Device Corp filed Critical Sony Chem & Inf Device Corp
Publication of TW201237955A publication Critical patent/TW201237955A/en

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Wire Bonding (AREA)

Abstract

The visibility of wafer cutting lines is assured and an adhesive layer is easily attached to each chip. Provided are: a mounting step for mounting a wafer (20) on a dicing sheet (21); a dicing step for dicing the wafer (20) into a plurality of chips (30); an adhesive forming step for forming an adhesive layer (31) on the surface of the wafer (20) after the dicing step; and an expanding step that separates the wafer (20) with the adhesive layer (31) into the individual chips by expanding the dicing sheet (21) on which the wafer (20) is mounted.

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201237955 六、發明說明： 【發明所屬之技術領域】 f發明係關於-種形成在一面黏貼有接著劑層而成之 可接者劑層曰曰片之晶圓之切割方法、才冓裝帶接著劑層晶片 之構裝方法、此帶接著劑層晶片之製造方法、及構裝有帶 接著劑層晶片之構裝體。 本專利申請以在20U年3月7日於日本提出中請之日 本專射請號日本㈣2GU侧336作為主張優先權 礎，參閱此專利申請之内容並援引於本專利申請裡。土 【先前技術】 :往’半導體積體電路是經由從半導體晶圓切割被構 :於：成半導體積體電路之基板上之半導體晶片之 ::與將切割後之半導體晶片構裝於基板之構裝步驟所製 切割步驟中，例如圖7所示般使用切割裝置_。 式置100具備設琶丰° 曰门 備又置+導體晶圓⑻之台座102、切斷半導俨 晶圓101之鑛片1〇3、 斬牛導體 ιοί 104 、。座1G2上且保持半導體晶圓 ^暫固疋片104、延伸暫固定片旧之擴展片⑻ 制。座102、鋸片103及擴展 控 105是““ ^展片1〇5之控制部1〇6。擴展片 疋#由真空吸附等保持於台座1〇2， 暫固定片1〇4。 予於上方積層有 卢同Q# U 1 G6係在既&之時序使台座1 G2只旋轉既定角 又 動鑛片⑻，如圖8A所示，於既定方向切斷半導 201237955 體晶圓1 0 1。又，拎生丨丨加， I制。P 1 06係如圖8B所示，半導體晶圓 1 0丨切斷後，藉由延伸 擴展片丨05 ’忐將半導體晶圓1 〇丨分 片化為複數個半導體晶片。 分片化後之各個半導體晶片】〗〇係如圖9A所示，透過 薄膜狀或糊狀之接著劑層 J增丨M構A至+導體積體電路之基 板1 1 2。接著劑層1 M m 係使用於結合劑樹脂中分散導電性粒 子所形成之異向性導電接著膜或導電性接著糊、或不含導 電性粒子之絕緣性接著膜或絕緣性接著糊。 接著劑層丨丨丨預先設置於基板"2之構裝部。而且， 分片化後之各個半導體晶片n〇配置於接著劑層⑴上方 後’如圖9B所示，藉由加熱接合具⑴只加熱按壓其既定 之溫度、壓力及時間。據此，接著劑，⑴之結合劑樹脂 :融，由對向之半導體晶片110及基板112之各電極間流 出的同時挾持著導電性粒子。此狀態下藉由結合劑樹脂之 硬化，導通半導體晶片11〇盘基板112 曰之 板丨丨2連接。 一板112之構裝部同時與基 再者，作為接著劑層丨丨丨，使用絕 蛀鍫铷夕在w |王供者膜或絕緣性 接者糊之情形時，藉由設於半導體晶片丨I 〇 基板H2之電極抵接而料^ 鬼電極與 此外’於上述半導體積體電路之製造 A 7次干，必堂斜 應以複數個尺寸形成之半導體晶片丨1〇 桩菩劑廢Η , 後數個尺寸形成 接者刎層1 1 1並配置於基板Π2上。因此，於 構裝複數個尺寸之半導體晶# 1 10之情形時等：基板上 以機器配置各種尺寸之接著劑層]】 難以律 叩、加製裎數及作 201237955 業時間。 又，對應各種半導體晶片11〇之尺寸形成導電性接著 膜或對應各種半導體晶片丨10之尺寸而切斷導電性接著 膜，會產生製造成本增加或切斷導致之廢棄損失。 在此，如圖10所示，提案半導體晶圓1〇1切斷前，預 先於半導體晶圓101之表面黏貼作為接著劑層lu之接著 膜115之工法。根據上述工法，將接著膜115接著於形成 有複數個半導體元件之半導體日^ 1G1之表面後，藉由切 割將接著m 115及半導體晶片110整批分片化。藉此，準 備與半導體晶片110之大小一致之接著膜115，達到基板 1 12上無需供應接著臈，或降低構裝成本。 【專利文獻】 【專利文獻1】日本特開2008-130700號公報 【專利文獻2】日本特開2〇〇1_237268號公報 【發明内容】 然而，藉由切割將接著劑層丨丨丨及半導體晶片1 1 〇整 批分片化之工法裡，作為接著劑f U1使用異向性導 著膜或異向性導電接著糊之情形時，分散在結合劑樹脂中 之導電性粒子使接著㈣】u之可視性（visibi丨々）顯著吳 化邊侍不易透過接著劑層lu視認設置於半導體晶圓 之表面上之刻劃線。 又，異向性導電接著膜或絕緣性接著臈等之半導體構 201237955 裝用之樹脂為降低線膨脹係數，必須添加填充劑。然而 該填充劑卻使接著劑層m之可視性更加的惡化。又， 般填充劑都使用二氧化石夕，但減少二氧化石夕添加量，或杏 加較二氧化石夕可視性不易惡化之氣化紹等之填充劑心 接著劑層π〗之可視性，但於降低線膨脹係數上效果有限 基板112與半導體晶片11G間之㈣可靠㈣而降低/ ’ 進而，藉由鑛片1〇3之切割令，對切斷部位喷送 同時進行切割，因此需注意水導致接著劑層⑴之產品车 命及性能劣化。又，也會有切割時所產生之粉末或塵= 者於接者制⑴導致連接不良的危險n抑制 =粉末等導致的不㈣響，提案於接著劑層⑴黏貼透明 蓋膜’但從於切割後分片化之半導 千等體日曰片11 〇之接著劑屉 111剝離蓋膜較不易及煩雜。 因此，本發明目的提供於 切割步驟中不會使刻劃線之 了視性惡化且能將接著劑層 1簡易黏貼於各個半導體晶 之日日圓之切割方法、構方、本 创豸裝方法、帶接著劑層晶片之 製•方法、構裝體。 為了解決上述課題，本發^ 难罢本咖 赞月之日日圓之切割方法，具備： 載置步驟，將晶圓載置於切$彳 J d乃上，切割步驟，將卜曰 圓切割為複數個晶片；接著劑 字上这曰曰 使載置有上述晶圓之上述士 ^劑層；擴展步驟，藉由 接著劑層分片化。 《上迷曰曰圓及上述 又’本發明之構裝方 ，將晶圓載 I万去’具備：載置步驟 201237955 置於切割片上；切割步驟，將上述晶圓切割為複數個晶片. 接者劑層形成步驟，於上述切割步驟後’於上述晶圓之表 面形成接著劑層；擴展步驟，藉由使載置有上述晶圓之上 述：割片延伸，將上述晶圓及上述接著劑層分片化；構裒 將上述分片化後之上述晶圓透過上述接著劑層構裝 於基板之構裝部。 又’本發明之帶接著劑層晶片之製造方法 =驟:將晶圓載置於切割片上；切割步驟，將二述晶圓 刀割為硬數個晶片；接著劑層形成步驟，於上述切割步驟 載=上述晶圓之表面形成接著劑層；擴展步驟，藉 =上述晶圓之上述切割片延伸，將上述晶圓及上述接 耆劑層分片化。 任 又，本發明之構裝體，係藉由上述 此根據本發明，晶圓切割後於接著面形成接著:層者因 定之接著劑層無損刻劃線之可視性，可確實進行既 …割處理。又，接著劑層不會受到於切割步驟中產生 =末^埃或嘴部供應之水等的影響，產品壽命也不會 劣化，還可確保導通可靠性。 【實施方式】 關於適用於本發明之晶圓之切割方法、構裝方法、帶 :劑層晶片之製造方法、構裝體閱圖式 仃誶細說明。 I 4延 如圖1所示，本實施形態之晶圓之切割方法具有載置 201237955 步驟、切割步驟、接著劑層形成步驟 形態之晶圓之切割方法係例如圖2及擴展步驟。本實施 來進行》 所示，可使用切割裝置！ [切割裝置1] 切割裝置1具備：失頭台2， 戰置保持晶圓20夕，、Λ 22、對準載台3,調整爽頭台2之 圓〇之β具 置、攝影部4，用以滿 認晶圓20之刻劃線、切削部 用以視 ' 進仃晶圓20之切割、嘴部 ό，供應水至切割部分、控制 宵4 市』°卩7，控置整體裝置。 夾頭台2係例如藉由未 口 丁之减壓裝置來吸引、固定 治具22。對準載台3以控制， ^ ° 之#曰示為基準使夾頭台2 於圖2中X方向及γ方向移動。 攝影部4具有：光學条 办丨 另尤予系，例如以紅外線攝影機構成，接 受於晶圓20之表面，.. _ 亦即’於s日圓20之接著面2〇a反射之 光、攝影元件，攝影伞與> $ & 4ΙΪ： 京/先予系所擷取之影像。攝影部4係藉 由例如從晶圓20之桩牮品w J·、& 〈接者面20a或載置面20b側照射光，接 受從晶圓2 0之接著而？ Λ e “ ， 安者面20a反射之光、或透射過晶圓2〇之透 射光來攝影aa圓20之接著面施之影像。而且，攝影部4 係將攝影後之影像資訊傳送至控制部7。 十刀削部5以控制部7之指示為基準切削晶圓20。切削 。戸5知例如具有切削晶圓之刀片8。切削部5係沿晶圓 2〇之刻劃線按麗旋轉刀片8來切削晶圓20。嘴部6以控制 部7之指示為基準’供應水至刀片8所切割部分。 控制。卩7具有··影像處理部$，處理攝影部4所攝影之 v像驅動°卩1 〇，從影像處理部9接收關於晶圓2 0之刻劃 201237955 線之資訊’驅動對準載a 對應切削部5之切部5、嘴部控制部11， [載置步驟]作，從嘴部6供應水於切割部分。 其次，參閱圖3，4+ *4· Μ丄 "十於切割裝置1之夾頭A 7 #要曰 圓20之載置步驟進行 曰 / 口 2载置曰日 日日圓2〇係藉由切割裝置1分 片化成複數個半導體晶κ , 置 刀 等體曰曰片30’例舉如矽 圓。晶圓20 -方之表面設為接著面心，係分片Hi; 體晶片3。時’透過接著劑層31與於基板33之構裝部形成 之基板電極34導通連接，另 埂接另一方之表面設為載置面20,係 藉由黏著於切割膠帶21而固定於治I 22。晶圓20之接著 面20a，依據刻劃線25所區分之各個半導體晶片3〇，設有 與基板33側之電極導通連接之晶片電極32。 固定晶圓20之治具22具備：環狀或框狀之框體”， 例如具有較晶圓20之直徑還大之直徑、切割膠帶2丨，貼附 於框體23。框體23設置成依據夾頭台2之指示可擴展於圖 2中X方向及y方向。 切割膠帶2 1係貼附有晶圓2〇之載置面2〇b，於切割步 驟中固定晶圓20的同時，防止分割成半導體晶片3〇後各 晶片之晶片彈出等。又，切割台21具有擴展性，係使切割 後之晶圓20分片化成複數個半導體晶片3〇。 切割膠帶21係例如貼附於框體23之—方面之側，並 於框體2 3之内側延展。作為切割膠帶2 1，例如使用藉由紫 外線的照射剝離力變小之黏著膜。據此，切割膠帶2 1，在 晶圓20分片化成複數個半導體晶片30後，藉由紫外線的 201237955 照射，拾取各個半導體晶片3〇時 載置步驟中於切割台2丨，曰° ^易分離半導體晶片30。 之一方之面之中央部。 9曰® 20 丫列如貝占著於治具22 [切割步驟] 線25 ’會以攝影部4進行晶圓為確疋切斷晶圓20之刻劃 影係可藉由從與攝影部4相對向〇之曰接著面20a之攝影。攝 照射光’以攝影部4接受來自接之晶圓20之接著面20a側 攝影係從夾頭台2朝向晶圓：2〇a之反射光進行。又’ 晶圓20之接著面、為止 載置面2仙照射透射過至 光亦可。 ，错由攝影部4接受該透射 攝影部4係將攝影後之影像 部7係依據影像處理 ° 、㈣部7。控制 ^ n 亥衫像資訊決定既定之列韌伯 而且，控制部7係驅動部1。驅動對準載”及;:丨線 5以沿著影像處理部9半定之心動”載口 3及切削部 …一 ”决疋之刻劃線25切斷晶圓2〇。 沁者刻劃線25將晶圓2〇如 夕碎，、ff η主 圖2中於X方向分宝丨 之清况時’驅動部10係驅 刀。i 刻劃線25之一端…μ半載。3來移動夾頭台2使 、刀片8之下方。其次， 驅動切削部5，於刀 勒。卩10係 由刀片8切削曰圓20垃 中降下切削部5,再藉 曰日圓20。接者，驅動部1 〇驅動 晶圓20移動至χ方向。 戰。3使 如此’於切割步驟中，由於晶圓20係沿著刻劃 於既定方南h細 _ 、Ί 2 5 曰万θ切斷’因而可分割為複數個半導體晶# 3〇。 夸曰曰圓20因載置面20b黏著於切割膠帶2 1，因此被八割 201237955 為複數個半導體晶片30後之各晶片並未彈出，而是保持圓 盤狀。 此外，於切割步驟中’藉由嘴部控制部π由嘴部“共 應水於切割部分。 [接著劑層形成步驟] 其次’如圖4所示，於晶圓2〇之接著面2〇&形成接著 劑層3卜接著劑層31形成是使用，於結合劑樹脂中分散導 電粒子後形成之異向性導電接著膜（ACF:Anis〇tr〇pic Conductive FUm)、導電性接著糊、或不含導電性粒子之絕 緣性接著膜（NCF:N〇n Particle c〇nductive Fnm)或絕緣性接 著糊、ACF與NCF積層後之物等。此外，作為接著劑層， 使用導電性接著糊或絕緣性接著糊之情形時，積層於晶圓 2〇之接著面20a前，藉由預先加熱導電性接著糊或絕緣性 接著糊至約1 〇〇t進入B階段化。 接著劑層31包含例如膜形成樹脂、液狀硬化成分及硬 化劑。又’接著劑層31亦可包含例如各種橡膠成分、柔軟 劑、各種填充劑類等之添加劑。 作為膜形成樹脂可例舉苯氧基樹脂、聚醋樹脂、聚酿 胺樹脂、聚醯亞胺樹脂。膜形成樹脂係從取得材料之容易 度及連接可靠性之觀點’較佳為含苯氧基樹脂。作為液狀 硬化成分，可例舉液姑β ^ i +液狀％虱樹脂、丙烯酸酯。液化 分係從連接可靠性及硬化物之穩定性之觀點，較佳成 2 ==基。作為硬化劑，液狀硬化成分為液狀環氧 曰〇時，可例舉咪唑、胺類、鎏鹽、鏽鹽、酚醛類。 201237955 稀酸酷之情形時’作為硬化劑可例舉有 性導電接著膜或導電性接著糊之導電性 向性導電膜中使用之公知之各種導電性 、鐵、銅、鋁、錫、鉛、鉻、鈷、銀、 金屬合金之粒子、金屬氧化物、碳、石 塑膠等之粒子之表面被覆金屬者，或列 面再被覆絕緣薄膜者等，於樹脂粒子之 情形時，作為樹脂粒子，可列舉例如環 丙烯酸樹脂、丙烯腈'笨乙烯（AS)樹脂、 '二乙烯苯系樹脂、笨乙烯系樹脂等之 液狀硬化成分為丙 機過氡化物。 作為含有異向 粒子，可列舉於異 粒子，例如：於鎳 金等之各種金屬或 墨、玻璃、陶瓷、 舉於該等粒子之表 表面被覆金屬者之 氣樹脂、酴齡樹脂、 笨代三聚氰胺樹脂 极子。 此外，異向性導電接著膜或絕緣性接著膜係從處理之 合易度、保存穩定性等之觀點，於實施剝離處理之町 ;!:膜20上塗布形成。異向性導電接著膜或絕緣性接著膜 面:曰® 0之接著面2〇a黏貼與設有制離膜之面相反側之 又’異向性導電接著膜或絕緣性接 2。為同-形狀，例如以圓形狀之方膜之形狀與晶圓 置里=劑層之形成步驟中，於晶圓20之接著面…配 之加二接著膜或絕緣性接著膜。其次1由未圖示 緣性接。具’從剝離膜上方以於異向性導電接著膜或絕 * _ 止式硬化程度之既定 又、'力、時間來加熱按壓。據此晶 /皿 形成由里Α ω亦 圓20係於接者面20a 戍由異向性導電接著膜或絕緣性 者膜構成之接著劑層 201237955 3 1。接著劑層3 1形成後剝離剝離膜。 匕卜加熱接σ具係在與晶圓2 0間介在有矽氧橡膠等 之彈性體而加熱按壓亦可。藉由彈性體介於其中，加孰接 合具可均等施加壓力於晶圓2〇整面。 [擴展步驟] 其次’如圖5所示，晶圓2〇藉由擴展來分片化各個半 :體晶片^該擴展步驟中’依據失頭台2之指示切割膠 γ21於圖2中χ方向及y方向在水平方向延伸。據此，晶 圓2〇係分片化成各個複數個半導體晶片3〇,該複 晶片30沿著刻劃線25被分割。 導肢 此時，於晶圓20之接著面2〇a形成之接著劑層31係， 明圓20分片化成各個半導體晶片3〇的同時，藉由擴展導 致之應力沿著刻劃線25與半導體晶片3〇同形狀的切斷。 亦即，藉由擴展步驟’形成有接著劑層31之晶圓2"分 片化成在對基板33之構裝面設有接著劑層31之各個複數 個半導體晶片3 0。 其後，藉由於切割膠帶21照射紫外線等導致黏著力下 拉伸各帶接著劑層31之半導體晶片30,藉此從切割 膠帶21剝離。據此’藉由形成有接著劑層3丨之晶圓2〇, ^成複數個帶接著劑層31之半導體晶片30。該帶接著· 之丰導體晶片3。係原本為晶圓2。之接著面2〇a ==與基板33之基板電極34導通連接之晶片電極32 之接者面3〇a’於該载置面3〇a形成接著劑層3丨。 此外’半導體晶片30係’作為接著劑層3丨使用絕緣 13 201237955 性接著膜之情形時’作為晶片電極32亦可形成凸塊電極。 如此’依據本實施形態之晶圓之切割方法及帶接著劑 層之半導體晶片之製造方法，於晶片20切割後於接著面2〇 形成接著劑3 1。因此，晶圓2〇係刻劃線25之可視性並未 因接著劑層3丨而有所損失，而可確實進行既定之切割處 理。又，接著劑層3 1不受於切割步驟中產生之粉末或塵埃、 或藉由嘴部6供應之水等之影響，因此產品壽命不會劣化， 又確保導通可靠性。 又，依據本實施形態之晶圓之切割方法及帶接著劑層 之半導體晶片之製造方法，至晶圓2〇之切割步驟可使用以 往工法，未伴隨製造設備及製造步驟較大之變更即可導 入。又，由於接著劑層之形成於切割步驟後，作為接著劑 層31曰之材料，可使用可視性低之導電性接著膜或填充劑之 真充里夕之絕緣性接著膜，因而可降低接著劑層3丨之線膨 L馎抆步驟] 糟由切割膠帶2卜被拾取之帶接著劑層3〖之 電mr*，透過接著制31㈣於構成半^ 性基板 &33。基板33係例如為一種硬性基板或可撓 “冓裝半導體晶片30之構裝部，形成有與於 之接著面3㈣成之晶片電極32導通連接之基板 半導體晶片 構裝。構裝裝置 30係例如圖6所 4〇具有：載台41， 不，可使用構裝裝置4〇 載置基板33、加熱接合 14 201237955 具42，與载台41相對向支撐，將半 π ®日日片3 0加執按题 於基板33。加熱接合呈47在史壯女丄 要σ具42係女裝有由矽氧橡膠之彈性體算 構成之按壓構件43，藉由該按壓構件43 丹w來加熱按壓丰導护 ^ # 30 。 守 於構裝步驟中’首先，於載台4丨所載置之基板33上 暫時搭制數個帶接著層31之半導W 3Q。此時，帶 劑層31之半導體晶片3〇,係朝向基板”暫時搭載設置有 接者劑層31之接著面3Ga。又，帶接著劑層η之半導體晶 片30係使於接著面3Qa形成之晶片電極32、與設置於基: 33之基板電極34以相對向對位之方式暫時裝載。 其次’構裝裝置40係下降加熱接合具42，並以按壓構 件43將帶接著劑層31之半導體晶片3〇加熱按壓至基板 仏此日寺，若依據例如稱為哪（心以_〇^丨心叫叫 工法轉性體覆蓋基板33整體狀態之按壓方法，則可於同 一基板上整批壓接複數個暫時裝載之半導體晶片30。 "藉由加熱接合具42以既定之溫度、壓力、時間加熱按 i導致接著劑層3 1之結合劑樹脂流動，於晶片電極32 人土板電極34間挾持導電性粒子的同時，於該狀態下熱硬 化據此，形成半導體晶片30之晶片電極32與基板33之 基板電極3m生、機械性連接之構裝體。 此處，依據本實施形態之構裝方法及構裝體，如上所 述:從切割晶ffl 20後於接著面2〇a形成接著劑㉟31，因此 “著蜊層3 1係不文於切割步驟中所產生之粉末或塵埃、或 藉由觜6供應水等之影響’因此構裝有半導體晶片30之 201237955 構裝體之產品壽命不會劣化，又可 [冷擴展] ' 月導通之可靠性。 又，於上述擴展步驟中，若於呢以， 進行’則如異向性導電接著膜或絕緣性接著膜：部環境下 3丨係因低溫導致伸縮性變低（冷擴展）。因此，：著劑層 低溫環境下實施擴展步驟，於晶圓2〇之 “上述 接著劑層31係、更確實的沿¥ a形成之 同形狀的切斷。 “丨線25’與半導體晶片3。 [其它] 此外’於上述實施形離φ， 〜、 ·十對於按壓構件4 3使用人 成橡膠等之彈性體，於基板 。 ^批構裝複數個帶接著劑屏 3 1之半導體晶片3 〇 情 曰 丨月小進仃過說明 '然而，於基板33201237955 VI. Description of the Invention: [Technical Fields According to the Invention] The invention relates to a method for cutting a wafer formed on an adhesive layer of an adhesive layer formed on one side of an adhesive layer, and then an armor tape A method of assembling a layer of a wafer, a method of manufacturing the wafer with an adhesive layer, and a package having a wafer with an adhesive layer. This patent application is filed on the Japanese date of March 7th, 20th, and is hereby incorporated by reference. [Previous technology]: The semiconductor integrated circuit is formed by cutting a semiconductor wafer on a substrate of a semiconductor integrated circuit from: a semiconductor wafer: and a semiconductor wafer to be diced on the substrate In the cutting step by the constitutional step, for example, the cutting device _ is used as shown in FIG. The type 100 has a pedestal 102 for setting up a +-conductor wafer (8), a slab 1 〇 3 for cutting the semi-conductive wafer 101, and a yak conductor ιοί 104 . The holder 1G2 is held by a semiconductor wafer, a temporary die 104, and an extended extension (8). The seat 102, the saw blade 103, and the extension control 105 are "" control unit 1〇6 of the exhibition piece 1〇5. The extension piece 疋# is held by the vacuum suction or the like on the pedestal 1〇2, and the fixed piece 1〇4 is temporarily fixed. For the upper layer, there is Lu Q# U 1 G6 system at the timing of the & pedestal 1 G2 only rotates the predetermined angle and moves the ore piece (8), as shown in Figure 8A, cuts the semi-conducting 201237955 body wafer in the given direction. 1 0 1. Also, 拎生丨丨, I system. As shown in Fig. 8B, after the semiconductor wafer is cut, the semiconductor wafer 1 is divided into a plurality of semiconductor wafers by extending the extension sheet 05'. Each of the semiconductor wafers after the singulation is as shown in Fig. 9A, and the substrate 1 1 2 of the M structure A to the + volume body circuit is reinforced by a film-like or paste-like adhesive layer J. The subsequent agent layer 1 M m is an anisotropic conductive adhesive film or a conductive paste which is formed by dispersing conductive particles in a binder resin, or an insulating adhesive film or an insulating paste which does not contain conductive particles. The layer of the layer is then placed in advance on the structure of the substrate "2. Further, after the individual semiconductor wafers which have been sliced are disposed above the adhesive layer (1), as shown in Fig. 9B, only the predetermined temperature, pressure and time are heated and pressed by the heating bonding tool (1). According to this, the binder, (1), the binder resin is melted, and the conductive particles are held while flowing between the electrodes of the opposite semiconductor wafer 110 and the substrate 112. In this state, the bonding of the bonding resin is performed to electrically connect the semiconductor wafer 11 to the substrate 2 of the disk substrate 112. The mounting portion of one of the plates 112 is simultaneously provided as a layer of the adhesive layer, and is used in the case of a semiconductor film or an insulating contact paste.丨I 〇The substrate of the substrate H2 is abutted and the material is added to the above-mentioned semiconductor integrated circuit A 7 times dry, and the semiconductor wafer formed by a plurality of sizes should be formed. The latter plurality of dimensions form the contact layer 1 1 1 and are disposed on the substrate Π2. Therefore, in the case of arranging a plurality of semiconductor crystals #1 10 of a size, etc., an adhesive layer of various sizes is arranged on the substrate by a machine]] It is difficult to add a number of turns and to make a time of 201237955. Further, the conductive adhesive film is formed in accordance with the size of each of the semiconductor wafers 11 or the size of the various semiconductor wafers 10, and the conductive adhesive film is cut, resulting in an increase in manufacturing cost or a loss in cutting due to cutting. Here, as shown in Fig. 10, before the semiconductor wafer 1〇1 is cut, a method of adhering the adhesive film 115 as the adhesive layer layer to the surface of the semiconductor wafer 101 is preliminarily applied. According to the above method, the bonding film 115 is subsequently formed on the surface of the semiconductor wafer 1G1 on which the plurality of semiconductor elements are formed, and then the subsequent m 115 and the semiconductor wafer 110 are sliced in a batch by cutting. Thereby, the adhesive film 115 which is sized to match the size of the semiconductor wafer 110 is prepared, and it is not necessary to supply the subsequent embossing on the substrate 12, or the construction cost is lowered. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2008-130700 (Patent Document 2) Japanese Laid-Open Patent Publication No. Hei No. Hei. No. 2-237268. However, the adhesive layer and the semiconductor wafer are cut by cutting. 1 1 In the whole batching method, when an anisotropic conductive film or an anisotropic conductive paste is used as the adhesive f U1 , the conductive particles dispersed in the binder resin are followed by (4) Visibility (visibi丨々) significantly makes it difficult to visualize the scribe lines provided on the surface of the semiconductor wafer through the adhesive layer. Further, an anisotropic conductive adhesive film or a semiconductor structure such as an insulating enamel 201237955 is used to reduce the coefficient of linear expansion, and it is necessary to add a filler. However, the filler deteriorates the visibility of the adhesive layer m. Moreover, the fillers are all made of silica dioxide, but the amount of addition of the dioxide is reduced, or the visibility of the filler core layer π of the gasification of the apricots and the dioxide is not easily deteriorated. However, the effect of reducing the coefficient of linear expansion is limited between the substrate 112 and the semiconductor wafer 11G. (4) Reliable (4) and lowered / ' Further, by cutting the cutting piece of the ore piece 1 3, the cutting portion is simultaneously sprayed, and therefore Note that water causes deterioration in product life and performance of the adhesive layer (1). In addition, there may be powder or dust generated during cutting. (1) The risk of connection failure caused by the manufacturer (1) n suppression = no (four) ringing due to powder, etc. It is proposed to adhere the transparent cover film to the adhesive layer (1) but from After the dicing, the semi-conducting turmeric film 11 which is diced and diced is relatively difficult and complicated to peel off the cover film. Therefore, the object of the present invention is to provide a method for cutting a Japanese yen in which the adhesive layer 1 is not easily deteriorated in the cutting step, and which can easily adhere the adhesive layer 1 to each of the semiconductor crystals. Method and structure for manufacturing a wafer with an adhesive layer. In order to solve the above problem, the method of cutting the Japanese yen on the day of the present is: The loading step, placing the wafer on the cutting surface, cutting the cutting step, cutting the divination into plural a wafer; the adhesive layer is placed on the wafer layer on which the wafer is placed; and the spreading step is divided by the adhesive layer. "The above-mentioned fascination and the above-mentioned "construction of the present invention, the wafer is loaded with 10,000" is provided: the mounting step 201237955 is placed on the dicing sheet; the cutting step is to cut the wafer into a plurality of wafers. a layer forming step of forming an adhesive layer on the surface of the wafer after the dicing step; and an expanding step of extending the wafer and the adhesive layer by extending the dicing sheet on which the wafer is placed The dicing is performed by arranging the sliced wafer to be passed through the adhesive layer to the structure of the substrate. Further, a method for manufacturing a wafer with an adhesive layer of the present invention = a step of: placing a wafer on a dicing sheet; a dicing step of cutting the wafer into a hard number of wafers; and an adhesive layer forming step in the cutting step Loading = forming an adhesive layer on the surface of the wafer; and expanding the film to extend the wafer and the interface layer by the extension of the dicing sheet of the wafer. Further, according to the present invention, the structure of the present invention can be surely subjected to the cutting of the underlying layer of the adhesive layer after the wafer is diced and then formed on the succeeding surface. deal with. Further, the adhesive layer is not affected by the generation of water at the end of the cutting step or the supply of water by the mouth, and the life of the product is not deteriorated, and the conduction reliability can be ensured. [Embodiment] A dicing method and a bonding method for a wafer to which the present invention is applied, a method for producing a wafer of a layered layer, and a configuration of a structure for a wafer are described in detail. I 4 Extension As shown in Fig. 1, the wafer dicing method of the present embodiment has a dicing method for depositing a wafer in the form of a 201237955 step, a dicing step, and an adhesive layer forming step, for example, Fig. 2 and an expansion step. The cutting device can be used as shown in this implementation! [Cutting device 1] The cutting device 1 includes a head rest 2, a wafer holding device 20, a cymbal 22, an alignment stage 3, a β-shaped device for adjusting the round table 2, and a photographing unit 4, The scribe line is used to fully recognize the wafer 20, and the cutting portion is used to view the cutting of the wafer 20, the mouth ό, supply water to the cutting portion, and control the 市4 city. The chuck table 2 sucks and fixes the jig 22 by, for example, a pressure reducing device that is not used. The chuck table 2 is moved in the X direction and the γ direction in FIG. 2 by aligning the stage 3 with the control and the reference of ^ ° as a reference. The photographing unit 4 has an optical strip, and is composed of, for example, an infrared camera, and is received on the surface of the wafer 20, ie, _, that is, light reflected from the back surface 2〇a of the s yen 20, and the photographic element. , Photography Umbrella > $ & 4ΙΪ: Image taken by Beijing/First. The photographing unit 4 receives light from the side of the wafer 20 by, for example, irradiating light from the side of the wafer 20 of the wafer 20, and the side of the mounting surface 20a or the mounting surface 20b. Λ e“ , the light reflected from the surface 20a or the transmitted light transmitted through the wafer 2 is used to image the image of the aa round 20. Further, the photographing unit 4 transmits the image information after the photographing to the control unit. 7. The ten-cutting unit 5 cuts the wafer 20 based on the instruction of the control unit 7. The cutting is performed, for example, with the blade 8 for cutting the wafer. The cutting portion 5 is rotated along the line of the wafer 2 The blade 8 cuts the wafer 20. The nozzle 6 supplies water to the portion cut by the blade 8 based on the instruction of the control unit 7. Control 卩7 has the image processing unit $, and processes the v image captured by the imaging unit 4. After driving the image processing unit 9, the image processing unit 9 receives the information on the line of the wafer 20 0 etched 201237955. The drive alignment target a corresponds to the cut portion 5 of the cutting portion 5 and the mouth control unit 11, [mounting step] For example, water is supplied from the mouth portion 6 to the cutting portion. Next, referring to Fig. 3, 4+ *4· Μ丄"10 in the cutting device 1 chuck A 7 #要曰圆20 placement step is performed / mouth 2 Placed on the day of the Japanese yen 2 by the cutting device 1 into a plurality of semiconductor crystals κ, knives and other body 30 30' The wafer 20 - the surface of the wafer 20 is placed on the surface of the surface, and is divided into Hi; the bulk wafer 3. When the substrate layer 3 is formed through the adhesive layer 31, the substrate electrode 34 formed on the substrate 33 is electrically connected. The surface of the other surface is set as the mounting surface 20, and is fixed to the rib I by adhesion to the dicing tape 21. The contiguous surface 20a of the wafer 20 is formed by the dicing lines 25, The wafer electrode 32 is electrically connected to the electrode on the side of the substrate 33. The jig 22 for fixing the wafer 20 is provided with a ring-shaped or frame-shaped frame, for example, having a diameter larger than the diameter of the wafer 20, and the dicing tape 2丨, attached to the frame 23. The frame 23 is arranged to be expandable in the X direction and the y direction in Fig. 2 in accordance with the instruction of the chuck table 2. The dicing tape 2 1 is attached with the mounting surface 2 〇 b of the wafer 2, and the wafer 20 is fixed in the dicing step, and the wafers of the wafers after the semiconductor wafer 3 are separated are prevented from being ejected. Further, the cutting table 21 has expandability, and the diced wafer 20 is divided into a plurality of semiconductor wafers 3 . The dicing tape 21 is attached, for example, to the side of the frame 23 and extends to the inside of the frame 23. As the dicing tape 2 1, for example, an adhesive film in which the peeling force is reduced by the irradiation of the ultraviolet rays is used. Accordingly, the dicing tape 2 1 is formed into a plurality of semiconductor wafers 30 after the wafer 20 is divided into a plurality of semiconductor wafers 30, and is irradiated by ultraviolet rays of 201237955, and the semiconductor wafers are picked up at the time of the mounting step 2 at the cutting stage 2丨, 曰° The semiconductor wafer 30 is separated. The central part of one side. 9曰® 20 丫 如 占 占 占 占 占 占 占 占 [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ The photograph of the face 20a is opposite to the face. The photographing light is received by the photographing unit 4 on the side of the back surface 20a of the wafer 20 to be bonded. The photographing system is reflected from the chuck table 2 toward the wafer: 2〇a. Further, the surface of the wafer 20 may be irradiated with light until the surface of the wafer 20 is irradiated. The photographing unit 4 receives the transmissive photographing unit 4, and the image portion 7 after photographing is based on the image processing ° and the (four) portion 7. Controlling the n-shirt image information determines a predetermined set of toughness. Further, the control unit 7 is the drive unit 1. Driving the alignment load "and": the 丨 line 5 is cut along the image processing unit 9 by the half-centered "portion 3" and the cutting portion... 25, the wafer 2 is broken, and ff η in the main picture 2 in the X direction, when the treasure is in the condition of the 'drive unit 10 is driving the knife. i scribe line 25 one end ... μ half load. 3 to move The chuck table 2 is placed below the blade 8. Next, the cutting portion 5 is driven to the blade. The 卩10 is cut by the blade 8 and the cutting portion 5 is lowered by the blade 20, and the yen is 20. The driver is driven. 1 〇 drive the wafer 20 to move to the χ direction. War. 3 so that in the cutting step, since the wafer 20 is cut along the predetermined square _, Ί 2 5 θ θ cut off Divided into a plurality of semiconductor crystals #3〇. The quiz circle 20 is adhered to the dicing tape 2 by the mounting surface 20b, so that the wafers after the eight semiconductor chips 30 are cut out are not popped, but are kept round. In addition, in the cutting step, 'the mouth portion π is used to "water" the cutting portion by the mouth control portion π. [Adhesive layer forming step] Next, as shown in FIG. 4, the bonding layer 3 is formed on the bonding surface 2 of the wafer 2, and the adhesive layer 31 is formed to be used, after dispersing the conductive particles in the binder resin. An anisotropic conductive adhesive film (ACF: Anis 〇tr〇 pic Conductive FUm), a conductive paste, or an insulating adhesive film (NCF: N〇n Particle c〇nductive Fnm) or insulation The paste is followed by paste, ACF and NCF. Further, as the adhesive layer, when a conductive paste or an insulating paste is used, the layer is laminated on the back surface 20a of the wafer 2, and the paste is heated in advance by a paste or an insulating paste to about 1 〇. 〇t enters B-stage. The subsequent agent layer 31 contains, for example, a film forming resin, a liquid hardening component, and a hardener. Further, the adhesive layer 31 may contain additives such as various rubber components, softeners, various fillers, and the like. The film forming resin may, for example, be a phenoxy resin, a polyester resin, a polyamine resin or a polyimine resin. The film-forming resin is preferably a phenoxy-containing resin from the viewpoint of easiness of obtaining a material and connection reliability. The liquid hardening component may, for example, be a liquid guar β ^ i + liquid % oxime resin or an acrylate. The liquefaction fraction is preferably 2 == base from the viewpoint of connection reliability and stability of the cured product. When the liquid hardening component is a liquid epoxy oxime as the curing agent, it may, for example, be an imidazole, an amine, a sulfonium salt, a rust salt or a phenolic aldehyde. 201237955 In the case of dilute acidity, 'as a curing agent, a conductive conductive adhesive film or a conductive conductive paste which is used in a conductive conductive film can be exemplified, and various conductive, iron, copper, aluminum, tin, lead, and chromium are used. In the case of particles of cobalt, silver, metal alloy particles, metal oxides, carbon, stone, and the like, or the surface of the particles coated with the insulating film, in the case of the resin particles, examples of the resin particles include For example, a liquid hardening component such as a ring acrylic resin, an acrylonitrile's stupid ethylene (AS) resin, a 'divinylbenzene resin, or a stupid vinyl resin is a propylene sulfide. Examples of the heterogeneous particles include heterogeneous particles, for example, various metals such as nickel gold or ink, glass, ceramics, and a gas resin coated with a metal surface of the particles, ageing resins, and styrene melamine. Resin pole. Further, the anisotropic conductive adhesive film or the insulating adhesive film is formed by coating on the film 20 which is subjected to the peeling treatment from the viewpoints of ease of handling, storage stability, and the like. The anisotropic conductive adhesive film or the insulating adhesive film: the back surface 2〇a of 曰® 0 is adhered to the opposite side of the surface on which the film is formed, and the anisotropic conductive adhesive film or insulating joint 2 is attached. In the same shape, for example, in the shape of a square-shaped square film and in the step of forming a wafer in the wafer layer, a bonding film or an insulating bonding film is applied to the bonding surface of the wafer 20. Next, 1 is connected by a not-shown edge. The heat is pressed from above the release film to the degree of the anisotropic conductive adhesive film or the degree of hardening of the film. According to this, the crystal/dish is formed of an adhesive layer composed of an anisotropic conductive adhesive film or an insulating film, which is made of a ω ω ω 20 circle on the contact surface 20a 2012 201237955 3 1 . The release layer 31 is then peeled off after the formation of the agent layer 31. The heat-contacting yoke may be heated and pressed between the wafer 20 and the elastomer such as a silicone rubber. With the elastomer interposed therebetween, the twisted adapter can apply pressure equally to the entire surface of the wafer 2. [Expansion Step] Next, as shown in FIG. 5, the wafer 2 is divided into individual halves by expansion: the bulk wafer is in the expansion step, and the glue γ21 is cut in the direction of FIG. 2 according to the indication of the head station 2. And the y direction extends in the horizontal direction. Accordingly, the wafer 2 is divided into a plurality of semiconductor wafers 3, and the replica 30 is divided along the scribe line 25. At this time, the adhesive layer 31 formed on the bonding surface 2〇a of the wafer 20 is formed into a thin film 20 into individual semiconductor wafers 3, while the stress caused by the expansion is along the scribe line 25 and The semiconductor wafer 3 is cut in the same shape. That is, the wafer 2 having the adhesive layer 31 formed by the expanding step is singulated into a plurality of semiconductor wafers 30 in which the adhesive layer 31 is provided on the surface of the counter substrate 33. Thereafter, the semiconductor wafer 30 with each of the adhesive layer 31 is stretched by the dicing tape 21 by irradiation of ultraviolet rays or the like, thereby peeling off from the dicing tape 21. Accordingly, the semiconductor wafer 30 with the adhesive layer 31 is formed by the wafer 2 formed with the adhesive layer 3 . This tape is followed by a conductor wafer 3. It was originally wafer 2. The contact surface 2〇a == the contact surface 3〇a' of the wafer electrode 32 electrically connected to the substrate electrode 34 of the substrate 33 forms an adhesive layer 3丨 on the mounting surface 3〇a. Further, when the semiconductor wafer 30 is used as the adhesive layer 3, the insulating film 13 201237955 is used as the bonding film. As the wafer electrode 32, a bump electrode can also be formed. According to the wafer cutting method of the present embodiment and the method of manufacturing a semiconductor wafer with an adhesive layer, after the wafer 20 is diced, the adhesive 3 1 is formed on the succeeding surface 2〇. Therefore, the visibility of the wafer 2 scribe line 25 is not lost by the adhesive layer 3, and the predetermined cutting process can be surely performed. Further, the adhesive layer 31 is not affected by the powder or dust generated in the cutting step, or the water supplied through the mouth portion 6, and the like, so that the life of the product is not deteriorated, and the conduction reliability is ensured. Further, according to the method for dicing a wafer and the method for manufacturing a semiconductor wafer with an adhesive layer according to the embodiment, the dicing step to the wafer 2 can be performed by a conventional method, and the manufacturing equipment and the manufacturing steps are not changed. Import. Further, since the adhesive layer is formed after the dicing step, as the material of the adhesive layer 31, an electrically conductive adhesive film having a low visibility and an insulating adhesive film of a filler can be used, thereby reducing the subsequent adhesion. The layer 3 of the layer of the agent layer is swelled by the dicing tape 2, and the layer 3 of the adhesive layer 3 is picked up to form a semi-substrate & 33. The substrate 33 is, for example, a rigid substrate or a flexible "armored semiconductor wafer 30", and is formed with a substrate semiconductor wafer structure that is electrically connected to the wafer electrode 32 formed on the back surface 3 (4). The mounting device 30 is, for example, for example. In Fig. 6, the stack 4 has a stage 41. No, the substrate 33 can be placed using the mounting device 4, and the heating joint 14 201237955 42 can be supported by the stage 41 to add the half π® day sheet 30. The pressing problem is on the substrate 33. The heating joint is 47. In the Shizhuang women's σ 具 42 42 女装 有 有 有 有 有 有 有 有 有 有 有 有 有 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压 按压Guide ^ # 30. In the construction step, 'Firstly, a plurality of semi-conductors W 3Q with an adhesive layer 31 are temporarily laminated on the substrate 33 placed on the stage 4 。. At this time, the layer 31 is provided. The semiconductor wafer 3A is temporarily mounted on the bonding surface 3Ga on which the carrier layer 31 is provided toward the substrate. Further, the semiconductor wafer 30 with the adhesive layer η is temporarily loaded so that the wafer electrode 32 formed on the bonding surface 3Qa and the substrate electrode 34 provided on the substrate 33 are opposed to each other. Next, the "construction device 40" lowers the heating bonding tool 42, and presses the semiconductor wafer 3 with the adhesive layer 31 to the substrate by the pressing member 43 to the substrate, if, for example, it is called _〇^ By pressing the method of pressing the entire body of the substrate 33 to cover the entire state of the substrate 33, a plurality of temporarily loaded semiconductor wafers 30 can be pressure-bonded on the same substrate. " By heating the bonding tool 42 at a predetermined temperature and pressure The time heating causes i to cause the binder resin of the adhesive layer 31 to flow, while holding the conductive particles between the wafer electrode 32 and the earth plate electrode 34, and thermally hardens in this state, thereby forming the wafer electrode of the semiconductor wafer 30. 32. A structure in which the substrate electrode 3m of the substrate 33 is mechanically and mechanically connected. Here, according to the mounting method and the package of the present embodiment, as described above, after cutting the crystal ff20, the surface is 2a The adhesive 3531 is formed, so that "the coating layer 31 is not affected by the powder or dust generated in the cutting step, or the water supplied by the crucible 6 or the like", so that the 201237955 structure of the semiconductor wafer 30 is mounted. Product life It will not deteriorate, and it can be [cold expansion] 'the reliability of the month conduction. Also, in the above expansion step, if it is, proceed as 'is anisotropic conductive adhesive film or insulating adhesive film: part environment 3 The lanthanum is low in elasticity due to low temperature (cold expansion). Therefore, the expansion step is carried out in a low-temperature environment of the coating layer, and the above-mentioned adhesive layer 31 of the wafer 2 is formed in a more reliable manner. The shape is cut off. "Twist line 25' and semiconductor wafer 3. [Others] In addition, the above-mentioned embodiment is separated from φ, 〜, 十, and the pressing member 4 3 is made of an elastomer such as a rubber, on the substrate. Constructing a plurality of semiconductor wafers 3 with an adhesive screen 3 1 〇 曰丨 小 说明 说明 说明 ' ' ' ' ' ' ' '

構裝帶接著劑層3丨之半導體a W 干导體日曰片3〇之方法並未受限。例 如不使用合成橡膠等之彈，冲舻 评改肢亦可於基板33構裝帶接著 劑層3 1之半導體a K m — 令曰日片30又，亦可於基板33 —個個構裝 複數個帶接著劑層3 1之半導體晶片3〇。 又，加熱接合具42亦可使用陶瓷或金屬等之硬質頭、 或超音波頭之方式形成。 【圖式簡單說明】 圖丨係顯示本實施形態之晶圓切割方法之步驟圖。 圖2係顯7F K吏用於本實施形態之切割t i之側視圖。 圖3係顯示載置步驟及切割步驟之側視圖。 圖4係顯示接著劑層形成步驟之側視圖。 16 201237955 圖5係顯示擴展步驟之側視圖。 圖6係顯示半導體晶片之構裝步驟之側視圖。 圖7係顯示切割裝置之立體圖。 圖8 A係顯示晶圓之切割步驟，圖8 B係顯示擴展步驟 之俯視圖。 圖9係顯示習知之半導體晶片之構裝步驟之側視圖， 圖9A係顯示接著膜及半導體晶片之配置步驟，圖9B係顯 示加熱接合具之接著步驟。 圖1 0係顯示切斷帶接著膜晶圓之步驟側視圖。 【主要元件符號說明】 1 切割裝置 2 夾頭台 3 對準載台 4 攝影部 5 切削部 6 嘴部 7 控制部 8 刀片 9 影像處理部 10 驅動部 11 嘴部控制部 20 晶圓 20a 接著面 17 201237955 20b 載置面 22 治具 23 框體 30 半導體晶片 30a 接著面 3 1 接著劑層 32 晶片電極 33 基板 34 基板電極 40 構裝裝置 41 載台 42 加熱接合具 43 按壓構件The method of constructing the semiconductor layer a of the adhesive layer 3 干 dry conductor 曰 3 〇 is not limited. For example, if the elastic rubber or the like is not used, the semiconductor can be laminated on the substrate 33 with the adhesive layer 3 1 semiconductor a K m - the Japanese wafer 30 can be used in the substrate 33 as a plurality of structures. A semiconductor wafer 3 with an adhesive layer 31. Further, the heating jig 42 may be formed using a hard head such as ceramic or metal or an ultrasonic head. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a step of a wafer cutting method of the present embodiment. Fig. 2 is a side view showing the cutting t i used in the present embodiment. Fig. 3 is a side view showing the placing step and the cutting step. Fig. 4 is a side view showing a step of forming an adhesive layer. 16 201237955 Figure 5 shows a side view of the expansion step. Fig. 6 is a side view showing the constitution of the semiconductor wafer. Figure 7 is a perspective view showing the cutting device. Fig. 8A shows a cutting step of the wafer, and Fig. 8B shows a top view of the expanding step. Fig. 9 is a side view showing the construction steps of a conventional semiconductor wafer, Fig. 9A showing the arrangement steps of the bonding film and the semiconductor wafer, and Fig. 9B showing the subsequent steps of heating the bonding device. Figure 10 shows a side view of the step of cutting the tape with the film wafer. [Description of main component symbols] 1 Cutting device 2 Chuck table 3 Alignment stage 4 Photographing unit 5 Cutting part 6 Mouth part 7 Control part 8 Blade 9 Image processing unit 10 Drive unit 11 Mouth control unit 20 Wafer 20a Next 17 201237955 20b Mounting surface 22 Fixture 23 Frame 30 Semiconductor wafer 30a Next surface 3 1 Next agent layer 32 Wafer electrode 33 Substrate 34 Substrate electrode 40 Construction device 41 Carrier 42 Heating bonding tool 43 Pressing member

Claims (1)

201237955 七、申請專利範圍： 1.一種晶圓之切割方法，具備 載置步驟，將晶圓载置於切割片 切割步驟’將上述晶 接著劑層形成步驟， 之表面形成接著劑層； 圓切割為複數個晶片 於上述切割步驟後， 於上述晶圓201237955 VII. Patent application scope: 1. A method for cutting a wafer, comprising a placing step of placing a wafer on a cutting sheet cutting step of forming the above-mentioned crystalline adhesive layer forming step, forming a layer of an adhesive layer; a plurality of wafers after the cutting step, on the wafer 擴展步驟，藉由使載置有 將上述晶圓及上述接著劑層 上述晶圓之上述切割片延 分片化。 2.如申請專利範圍第1 祀国弟1項之晶圓之切割方法，其中 述擴展步驟係於1 〇玄以丁、佳— 下進行之冷擴展。 上 3·如申請專利範圍第1或第 中，上述接著劑層形成步驟係藉 圓表面進行。 2項之晶圓之切割方法， 由將接著膜黏貼於上述 其晶 '°月專利1(1圍第3項之晶圓之切割方法，其中，上 述接著臈係含有絕緣性接著膜或導電性粒子之異向性導電 接著膜。 电 5·—種構裝方法，具備： 載置步驟’將晶圓載置於切割片上； 步驟，將上述晶圓切割為複數個晶片； 接著劑層形成步驟，於上述切割步驟後，於上 之表面形成接著劑層； 擴展步驟，藉由使載置有上述晶圓之上述切割片延 伸，將，述晶圓及上述接著劑層分片化； 構裒步驟’將上述分片化後之上述晶圓透過上述接著 201237955 劑層構裝於基板之構骏部。 6· 一種接著劑層晶片之製造方法，且 載置步驟，將晶圓載置於切割片上^In the expanding step, the dicing sheet on the wafer and the adhesive layer wafer is stretched and sliced. 2. For example, in the patent application scope, the cutting method of the wafer of the 1st national brother, the expansion step is based on the cold expansion of 1 〇Xuan, Ding, Jia. The above adhesive layer forming step is carried out by a circular surface as in the first or the third of the patent application. A method of cutting a wafer of two items, wherein the bonding film is adhered to the wafer cutting method of the above-mentioned crystal [1], and the method of cutting the wafer of the third aspect, wherein the bonding layer contains an insulating adhesive film or conductivity. An anisotropic conductive adhesive film of the particles. The electrical assembly method comprises: placing a step of placing the wafer on the dicing sheet; and dicing the wafer into a plurality of wafers; and subsequently forming a layer layer, After the dicing step, an adhesive layer is formed on the upper surface; and in the expanding step, the wafer and the adhesive layer are sliced by extending the dicing sheet on which the wafer is placed; The above-mentioned wafer which has been sliced is passed through the above-mentioned layer of 201237955 to be laminated on the substrate. 6. A method for manufacturing an adhesive layer wafer, and a mounting step of placing the wafer on the dicing sheet ^ 切割步驟’將上述晶圓切割為複數個晶片 接著劑層形成步驟，於上述切割步驟後， 於上述晶圆 之表面形成接著劑層； 擴展步驟，藉由使載置有上述晶圓之上述切割片延 伸’將上述晶圓及上述接著劑層分片化。 7. 一種構裝體，係藉由申請專利範圍第5項之方法製 造〇 八、圖式： (如次頁） 20a dicing step of cutting the wafer into a plurality of wafer adhesive layer forming steps, forming an adhesive layer on the surface of the wafer after the dicing step; and expanding the step of dicing the wafer by placing the wafer The sheet extension 'slices the wafer and the above-mentioned adhesive layer. 7. A construction body manufactured by the method of claim 5, VIII. Schema: (e.g., next page) 20
TW101107621A 2011-03-07 2012-03-07 Wafer dicing method, mounting method, method for manufacturing adhesive layer, and mounted body wafer dicing method, mounting method, method for manufacturing adhesive layer, and mounted body TW201237955A (en)

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JP2011119767A (en) * 2011-03-07 2011-06-16 Sony Chemical & Information Device Corp Method for dicing wafer, method for mounting, method for manufacturing chip with adhesive layer, and mounted body

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