1380382 九、發明說明： 【發明所屬之技術領域】 本發明係有關-種三五族化合物半導體晶片的製程方 法’尤指-種方法可將研磨薄化後的半導體晶片固定於一承載 基板上’以便於後續的製程需要。此外，本方法也適用於其他 必須處理薄化後的半導體晶片製程，如發光二極體、微機電系 統、以梦域造材料的健電路及太蓄電板等。 【先前技術】 目前最先進的三五解導體功率元件，諸如異雜面雙極 電晶體(HBT)以及高電子遷移率電晶體(HEMT)或偽高電子遷 移率電晶體_EMT)等’不僅需要在轉體晶#絲進行許多 精細的製程步驟，同時也需要在晶片背面進行背面製程，如導 孔蝕刻及金屬鍍膜等。 在進行晶片背面導賊刻之前，晶片必須要先進行薄化處 理，通常是以機械研磨的方式將晶片#面磨至約ι〇〇 _的厚 度。以珅嫌為基板的辨元件而言’為了讓元件達到較佳的 散熱效果以及較低的接地電感，必須要在背面製作導孔並鐘上 金屬。然而，在進行上述的背面製程時，晶片的表面必須固定 ^-個平整的載台為了避免晶片表面的场在此過程損 壞，表面元件必須小心的以膠賴保護著。但若晶片表面需進 灯凸塊製程(bumping processes)，則在處理背面製程時將更為 棘手。-般表面的凸塊製程會導致晶片表_高度落差達到 5 1380382 漏〇叫，若在表面凸塊製程後進行晶片背面研磨，將高低 洛差極大的晶片表面貼附於研磨载台上時，表面的元件將更容 _。此外，當晶片表面有非常精細的元件結構時，如空橋 rndge)電極等’將表面貼附於研磨载台上也會造成元件損 壞。 廇及=解決方案至將製程順序對調，先進行晶片背面的研 磨及月面導孔和金屬製程，再接著進行表面元 而，在技術上而言，當晶片研磨薄化後將雜 :進行表面元件製程，晶料會在處理過程中因碎=損: 因此，發展一種適當的製程方法來處理這類經過研磨薄化的半 =’使:可以承受後續的製程步驟爾^ ^製"亚減低後續製程所可能造成的損壞，是當前重要的 【發明内容】 ^刺之轉目_絲供—種軸枝，肋 的轉體使其可以承受後續的 ^化學酬等製程，並減低後續製財 本發明所麵財法包L步驟，主要由—框^ =將補薄化後的半導邮嶋承絲板上。、其中馳 ”疋用來A撐錢轉帶，並且 ° =Γ_產線。該承載基 板或其他可以承受後續如熱處理或化學韻刻等製程的 6 基板材料。 本發_優點在於本方法可戰這些經過薄化後且 -脆弱辭導體郎在製程巾損壞，可以制在 =化半的树製程上，如三五辨«飾= x光一極體、微機電系統以及太陽能蓄電板等。 計讀ίΓ㈣優點在於本方法所錢的框时以特別設 =、/、、用於原有製程生產線，甚至也可以不則轉而以人工 方式進行，只要遵循本發明所提供的步驟即可。 為進一步了解本發日月，以下舉較佳之實施例，配合圖示、 圖號，將本發明之具體構翻容及其所達成的功效詳細說明如 【實施方式】 本發騎提供將研磨薄化後的半導體W固定在承載基 板上之所有方法步驟，均以提供—媽及—雙面料為基礎。 其中該框架—般是—金屬框架m，但也可以是其他材質的框 架’只要雜架可以絲支禮該雙轉帶即可。此框架也可以 =別設計’使其適用於原有處理半導體晶片的自動化生產線機 。因此，本方法所提供的步驟，不僅可以人工的方式將研磨 薄化後的半導體晶片貼附於另一承載基板上，同時也同樣適用 於大量製造的自動化生產線。 本發明的第—步驟是献供—上述之框架，如第一圖所 示。在第-步驟中，首先準備一金屬框架，並在該框架上貼附 1380382 第層藍膠膜(blue tape)102。本發明的第二步驟是將一雙面 膠帶201點附於該第-層藍膠膜⑽上，再將承載基板^於 該雙面膠帶201上’如第二圖所示。在第二步驟中，首先將— 雙面膠帶201貼附於該金屬框架1〇1的第一層藍膠膜⑽上。 接著將雙面膠帶201的正面保護臈202撕下，並將承載基板 203站附於該雙面膠帶201上。該承載基板2〇3可以是^石 基板、石英基板或其他材質的基板，只要可以穩定的固定薄化 後的半，並可承受後續如熱處理献學侧等製程即 可。本發明的第三步驟主要是將貼附著雙面膠帶观的承裁基 板203反轉翻面，讓雙面膠帶2〇1辈月上，以便於後續將薄化^ 的半導體晶片貼附於該雙面膠帶2G1上，如第三圖所示。在第 三步驟中’首先必須先將貼附著雙面膠帶2G1及第一層藍膠膜 ⑽的承載基板203纟金屬框架1〇1卸下。承载基板咖之外 多餘的雙面膠帶201以及第-層藍膠膜1〇2可在此步驟中切 除。為了貼回該承載基板203於金屬框架1〇1上，此時必須在 金屬框架101上貼附-第二層藍膠膜3〇1。隨後將先前卸下的 貼附著雙面膠帶201及第一層藍夥膜1〇2的承載基板2〇3翻 面’並貼回金屬框架1〇1上的第二層藍顧3〇ι。此時可將第 一層藍賴102以及該雙面膠帶2G1的背面保護膜撕下， 留下該承載基板2〇3於金屬捏架ιοί的第二層藍膠膜撕 上同N·在承載基板203上已貼附一層雙面膠帶測。本發明 81380382 IX. Description of the Invention: [Technical Field] The present invention relates to a method for manufacturing a tri-five compound semiconductor wafer, and in particular, a method for fixing a polished semiconductor wafer to a carrier substrate. So that the subsequent process needs. In addition, the method is also applicable to other semiconductor wafer processes that must be processed after thinning, such as light-emitting diodes, micro-electromechanical systems, health circuits made of dream domains, and solar panels. [Prior Art] The most advanced three-fifth conductor power components, such as hetero-heterobimorphic transistor (HBT) and high electron mobility transistor (HEMT) or pseudo-high electron mobility transistor (EMT), are not only It is necessary to carry out a number of fine process steps in the spin crystal, and also requires a backside process on the back side of the wafer, such as via etching and metal plating. Before wafer etchback, the wafer must be thinned first, usually by mechanical grinding to a thickness of about ι 〇〇. In order to achieve better heat dissipation and lower grounding inductance, it is necessary to make a via hole on the back side and metal. However, in performing the above-described backside process, the surface of the wafer must be fixed by a flat carrier. In order to prevent the field of the wafer surface from being damaged during this process, the surface component must be carefully protected by the adhesive. However, if the wafer surface needs to be bumped, it will be more difficult to handle the backside process. The bump process of the general surface will cause the wafer surface _ height drop to reach 5 1380382. If the wafer is back-grinded after the surface bump process, the wafer surface with the high and low lag is attached to the polishing stage. The surface components will be more _. In addition, when the surface of the wafer has a very fine component structure, such as an empty bridge or the like, attaching the surface to the polishing stage may cause damage to the element.廇 and = solution to reverse the process sequence, first grinding the back side of the wafer and the moon face and metal process, and then the surface element, technically, when the wafer is thinned, the impurity is: surface Component process, the crystal material will be broken during the process = damage: Therefore, develop a proper process method to deal with this kind of grinding and thinning half = 'make: can withstand the subsequent process steps ^ ^ system It is important to reduce the damage that may be caused by the subsequent process. [Summary of the invention] ^The turning of the thorns _ silk supply - the kind of shaft branches, the ribs can make it can withstand the subsequent ^ chemical remuneration process, and reduce the follow-up system The financial method of the invention is based on the L-step of the financial package, which is mainly composed of the frame----the half-guided post-roller on the wire-filled plate.其中 其中 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载 承载After the thinning and the fragile remarks of the conductor lang in the process towel damage, it can be made on the tree process of the halving, such as the three-fifth ray, the x-ray, the MEMS, the solar energy storage board, etc. The advantage of reading (4) is that the frame of the money of the method is specially set to =, /, for the original process line, or even manually, as long as the steps provided by the present invention are followed. For a better understanding of the present invention, the preferred embodiment of the present invention will be described in detail with reference to the drawings and drawings, and the detailed description of the functions and the functions achieved by the present invention are as follows. All the method steps of fixing the semiconductor W on the carrier substrate are based on providing the mother--double fabric. The frame is generally - the metal frame m, but it can also be a frame of other materials. This double frame can be used for silk threading. This frame can also be designed to make it suitable for the original automated production line machine for processing semiconductor wafers. Therefore, the steps provided by this method can not only be used to manually grind the thin film. The semiconductor wafer after being bonded is attached to another carrier substrate, and is also applicable to an automated production line for mass production. The first step of the present invention is to provide the above-mentioned framework, as shown in the first figure. In the first step First, a metal frame is prepared, and a 1380382 first layer blue tape 102 is attached to the frame. The second step of the present invention is to attach a double-sided tape 201 to the first layer of blue film (10). And then carrying the substrate on the double-sided tape 201 as shown in the second figure. In the second step, first, the double-sided tape 201 is attached to the first layer of the blue metal of the metal frame 1〇1. The film (10) is then removed. The front side protection tape 202 of the double-sided tape 201 is then peeled off, and the carrier substrate 203 is attached to the double-sided tape 201. The carrier substrate 2〇3 may be a stone substrate, a quartz substrate or other materials. The substrate as long as it can be stabilized The thinned half can be fixed and can be subjected to a subsequent process such as heat treatment. The third step of the present invention is mainly to reverse the surface of the substrate 203 adhered to the double-sided tape to make the double-sided tape 2 〇 1 generation month, in order to subsequently attach the thinned semiconductor wafer to the double-sided tape 2G1, as shown in the third figure. In the third step, 'first must first attach the double-sided tape 2G1 And the carrier substrate 203 of the first layer of blue rubber film (10) is removed from the metal frame 110. The excess double-sided tape 201 and the first layer of blue film 1〇2 which are carried outside the substrate can be cut off in this step. The carrier substrate 203 is attached back to the metal frame 110. At this time, a second layer of blue film 3〇1 must be attached to the metal frame 101. The previously removed attached double-sided tape 201 and the first are attached. The carrier substrate 2〇3 of the layer of the blue film 1〇2 is turned over and attached to the second layer of the blue frame 3〇1 on the metal frame 1〇1. At this time, the first layer of blue Lai 102 and the back protective film of the double-sided tape 2G1 can be peeled off, leaving the carrier substrate 2〇3 to be peeled off on the second layer of the metal film of the metal frame ιοί. A layer of double-sided tape is attached to the substrate 203 for measurement. The invention 8