TW201232164A - Method of correcting a defect of a photomask, method of manufacturing a photomask, photomask, and pattern transfer method - Google Patents

Method of correcting a defect of a photomask, method of manufacturing a photomask, photomask, and pattern transfer method Download PDF

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Publication number
TW201232164A
TW201232164A TW100135153A TW100135153A TW201232164A TW 201232164 A TW201232164 A TW 201232164A TW 100135153 A TW100135153 A TW 100135153A TW 100135153 A TW100135153 A TW 100135153A TW 201232164 A TW201232164 A TW 201232164A
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Taiwan
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light
film
defect
correction
width
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TW100135153A
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Chinese (zh)
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Yuji Sakamoto
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method of correcting a defect of a photomask uses a defect correcting apparatus and corrects an excess defect caused in a photomask having a light-transmitting portion and a light-shielding portion which are formed by patterning a light-shielding film formed on a transparent substrate. The method inculdes a film removing step of simultaneously removing the excessdefect in the light-transmitting portion and a part of the light-shielding film of the light-shielding portion adjacent to the light-transmitting portion having the excess defect, and a film forming step of forming a correction film im the light-shielding portion from which a part of the light-shielding film is removed in the film removing setp. Film formation carried out in the film forming step is carried out for the light-shielding portion having a width greater than a minimum film formation width which can be formed by one-time correctingoperation by the defect correction apparatus.

Description

201232164 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種於液晶顯示裝置之製造所使用 之光罩缺陷修正方法、光罩製造方法及光罩、以及圖案 轉印方法。 【先前技術】 於電視、顯示器等之圖像顯示裝置之領域，薄膜電 曰曰體液晶顯示裝置（Thin Film Transistor Liquid Crystal Display:以下稱為TFT_LCD)相較於使用CRT(陰極線 管）之顯示裝置’由於具有容易薄型化且消耗電力低之 優點’故於市場之商品比例急速增加。TFT-LCD係具 有於配置排列為矩陣狀之各畫素配置排列著TFT之構 造的TFT基板與對應於各晝素而配置排列有紅、綠以 及藍畫素圖案之濾色器在介設有液晶相之狀態下疊合 之概略構造。上述製品所使用之TFT、濾色器之製造上 係利用採光罩之光微影製程。 【發明内容】 此處所使用之光罩，伴隨近年來圖像顯示裝置之高 精細化所導致之圖案高密度化，具有1〜5μιη程度之線 寬者也不在少數。例如，必須有於具有線圖案（line pattern)或是間距圖案(space pattern)之寬度為3.Ομιη以 下的微細線-間距圖案（line and space pattern)的ΙΤΟ導 電膜、具有同樣線寬之薄膜電晶體之通道圖案等之圖案 化所使用之光罩。此外，為了減少於製程所使用之光罩[Technical Field] The present invention relates to a mask defect correction method, a mask manufacturing method, a mask, and a pattern transfer method used in the manufacture of a liquid crystal display device. [Prior Art] In the field of image display devices such as televisions and displays, a thin film transistor liquid crystal display device (hereinafter referred to as TFT_LCD) is compared with a display device using a CRT (cathode wire tube). 'Because of the advantages of being easy to thin and low in power consumption, the proportion of products in the market is rapidly increasing. The TFT-LCD is provided with a TFT substrate having a structure in which TFTs are arranged in a matrix in which the pixels are arranged in a matrix, and a color filter in which red, green, and blue pixel patterns are arranged in correspondence with the respective pixels. A schematic structure in which the liquid crystal phase is superposed. The TFTs and color filters used in the above products are manufactured by a photolithography process using a hood. SUMMARY OF THE INVENTION The reticle used here has a high density due to the high definition of the image display device in recent years, and a line width of about 1 to 5 μm is also rare. For example, it is necessary to have a tantalum conductive film having a line pattern or a space pattern having a width of 3. Ομηη or less and a film having the same line width. A photomask used for patterning a channel pattern of a transistor or the like. In addition, in order to reduce the mask used in the process

4 201232164 片數，乃希望因應於使用有曝光機之曝光解析極限以下 (主要為線寬3μιη以下）之微細圖案之光罩（以下所說明 之多灰階光罩之一種）等的需求，來形成極微細圖案。 另一方面，於大型LCD用罩體領域，已知有具備 遮光部以及透光部甚至是穿透率控制部之具轉印用圖 案的光罩（以下稱為多灰階光罩）。此乃基於使用光罩進 行圖案轉印之際對穿透於穿透率控制部之光的穿透量 加以控制而來控制於被轉印體上所形成之光阻膜厚的 目的所使用者。 例如，此處所使用之多灰階光罩可舉出藉由微細線 兄之遮光部與透光部來形成可成為曝光時所使用之 LCD用曝光機之解析極限以下的微細圖案之穿透率控 制部。此乃藉由將穿透於穿透率控制部之曝光量減少既 定罝而可於被轉印體上得到具有所希望光阻殘膜值之 光阻圖案。藉此，可得到具有不同複數光阻殘膜值之光 阻圖案。若使用此種多灰階光罩，藉由i片光罩來實施 習知2片光罩以上的製程，則於製造TFT_LCD等電子 元件之際，可減少必要之罩體片數。 於製造上述般具備線寬為LCD用曝光機之解析極 限以下的圖案之光罩的情況，不僅可將單一薄膜加以圖 案化來分別形成遮光部與穿透率控制部，且可藉由上述 微細圖案之設計來控制穿透率控制部之區域性穿透 率，而可形成具有不同穿透率之複數穿透率控制部，可 在不增加覃體製造之程序的前提下來實現具有多灰階4 201232164 The number of sheets is expected to be based on the demand for a fine pattern reticle (one of the multi-gray masks described below) which is below the exposure resolution limit of the exposure machine (mainly below the line width of 3 μm). A very fine pattern is formed. On the other hand, in the field of a large-sized LCD cover, a photomask (hereinafter referred to as a multi-gray mask) having a light-shielding portion, a light-transmitting portion, and even a transmittance control portion is known. This is based on the purpose of controlling the amount of penetration of light passing through the transmittance control unit to control the thickness of the photoresist formed on the transfer target by pattern transfer using a photomask. . For example, the multi-gray reticle used herein may have a transmittance of a fine pattern which is formed by a light-shielding portion and a light-transmitting portion of the fine wire brother to be an analytical limit of an exposure machine for an LCD used for exposure. Control department. This is to obtain a photoresist pattern having a desired photoresist residual film value on the object to be transferred by reducing the exposure amount penetrating the transmittance control portion by a predetermined amount. Thereby, a photoresist pattern having different complex photoresist residual film values can be obtained. When such a multi-gray mask is used, the conventional two-mask process can be implemented by using an i-mask, and the number of necessary covers can be reduced when manufacturing an electronic component such as a TFT_LCD. In the case of manufacturing the photomask having the pattern whose line width is equal to or lower than the resolution limit of the exposure machine for LCD, it is possible to form not only a single film but also a light shielding portion and a transmittance control portion, respectively, and The pattern is designed to control the regional transmittance of the transmittance control portion, and the complex transmittance control portion having different transmittances can be formed, and the multi-gray scale can be realized without increasing the procedure for manufacturing the cartridge.

S 5 201232164 之光罩’故為有用的作法。 另了方面，如此般於T F T、濾色器之製造上所使用 之光罩邁向圖案微細化之過程中，要修正於該微細圖案 所產生之缺陷而回復到與正常圖案相同形狀會有困難。 關於具有LCD曝光機之解析極限以下線寬的圖案 之修正方法方面，例如日本特開2002-107913號公報(專 利文獻1)當中揭示了一種方法，其並非將缺陷部分復原 成為f正常圖案為相同形狀，而是形成可得到和正常圖 案同等㈣效果之修正圖案。但是，在缺陷修正中，要 ^應不同情況來設計出可得到和作為穿透率控制部區 ，的正$圖案為相同穿透率之新圖案並非易事。 用以修正於光罩圖案所產生之缺陷的方法，可適用 :於田射照射之剩餘缺陷之去除、以及基於雷射CVD /之修正膜形成的缺漏缺陷之修正。 f 一方面，著重於放大LCD用基板本身尺寸、利 也逐案m產數，此等多灰階光罩所需尺寸 而有一邊為1000mm或是超過1200mm之 述;射:修下光二之缺陷修正方法可使用採上 裝置（以下也稱為雷射修正裝置）。此修正 而來1 ^可僅㈣正部位及㈣邊縣給原料氣體 射I昭Γ正膜之氣幕方式等方法。例如，可藉由脈衝雷 缺陷缺：以雷射之熱或是光能量等來將剩餘 射之埶〃 Q發以去除剩餘缺陷。此外，可藉由雷 光反應來和氣體、液體產生化學反應而於缺漏The mask of S 5 201232164 is a useful practice. On the other hand, in the process of miniaturizing the pattern of the reticle used in the manufacture of the TFT and the color filter, it is difficult to correct the defect generated by the fine pattern and return to the same shape as the normal pattern. . Regarding a method of correcting a pattern having a line width below the resolution limit of the LCD exposure machine, a method is disclosed in, for example, Japanese Laid-Open Patent Publication No. 2002-107913 (Patent Document 1), which does not restore the defective portion to the f normal pattern. The shape is formed by a correction pattern that gives an effect equivalent to the normal pattern. However, in the defect correction, it is not easy to design a new pattern in which the positive $ pattern is the same transmittance as the transmittance control portion. The method for correcting the defects generated in the mask pattern can be applied to the removal of residual defects in the field radiation and the correction of the missing defects formed by the laser CVD/correction film. f On the one hand, the emphasis is on amplifying the size of the substrate for LCD, and the number of products produced by the case, the size of these multi-gray masks, and the side is 1000mm or more than 1200mm; shooting: the defect of repairing the light II The correction method can use a picking device (hereinafter also referred to as a laser correcting device). This correction comes from 1 ^, which can be used only for the (four) positive part and (4) the side of the county to give the raw material gas to the air curtain method. For example, it is possible to eliminate the residual defect by using the pulsed lightning defect: the heat of the laser or the light energy. In addition, it can be chemically reacted with gases and liquids by lightning reaction in the absence of leakage.

S 6 201232164 缺陷上形成薄膜，以修正缺漏缺陷。 。、虽使用雷射時’為了增加雷射能量密度對所希望之 區域進仃照射，可使用光學系統來聚光雷射。但是，所 j吏用之雷射波長從1()μιη到次微練度，於修正時，要 維持必要之加卫精度而將可聚光使用之區域的最小尺 寸控制在和雷射波長同等或是更低有其困難。例如，光 罩之修正裝置可使用1μιη以下的雷射波長，但要因應 …、射刀布之穩疋性、光學系統之設計極限、光學系統調 整所造成之誤I等因素而將滿足品質之加工尺寸達到 比1卿來得小並不容易。此外，於最小加工尺寸附近 之尺寸進仃修正之情況，會因為上述因素造成加工光難 以穩定，而難以進行穩定的修正。 圖8係關於使用雷射之圖案修正例，⑷係顯示修 於透光4所產生之剩餘缺陷之例，⑻係顯示修正於 遮光部所產生之缺漏缺陷之例。於圖8⑷中，係將透 光部1Τ〜6Τ與遮光部is〜6s交互排列而成之線·間距圖 案當中橫跨複數透光部而發生之剩餘缺陷16(參見⑻） 力以修正m造成無需修正之周邊遽光部的圖案也 被去除了（參見⑽。此外，圖8(B)係對於和圖8⑷同 樣的線·間距㈣當巾橫跨魏遮光部而發生之缺漏缺 陷π(參見(_紐賴來崎修正之結果，造成修正 膜50超出至無需修正之周邊透光部的圖案(參見⑼）。 此等圖顯示了將和能以！次性修正作業來形成或 疋去除之最小加1尺寸為相同寬度之缺陷加以修正之S 6 201232164 A film is formed on the defect to correct the missing defect. . When using a laser, an optical system can be used to concentrate the laser in order to increase the laser energy density to illuminate the desired area. However, the laser wavelength used is from 1 () μιη to sub-micro-practice. In the correction, the necessary enhancement accuracy is maintained, and the minimum size of the area where the condensable light is used is controlled to be equal to the laser wavelength. Or lower has its difficulties. For example, the correction device of the reticle can use a laser wavelength of 1 μm or less, but the quality should be satisfied according to factors such as the stability of the squeegee, the design limit of the optical system, and the error I caused by the adjustment of the optical system. It is not easy to process the size to be smaller than 1 Qing. In addition, in the case of the size correction near the minimum processing size, the processing light is difficult to stabilize due to the above factors, and it is difficult to perform stable correction. Fig. 8 is an example of a pattern correction using a laser, (4) shows an example of residual defects generated by the light transmission 4, and (8) shows an example of correction of a missing defect caused by the light shielding portion. In Fig. 8 (4), the remaining defects 16 (see (8)) which occur across the plurality of light-transmitting portions among the line-pitch patterns in which the light-transmitting portions 1Τ to 6Τ are alternately arranged with the light-shielding portions is ～6 s (see (8)) are caused by the correction m. The pattern of the peripheral illuminating portion that has not been corrected is also removed (see (10). In addition, Fig. 8(B) is the same line and spacing as in Fig. 8(4). (4) The missing defect π occurs when the towel traverses the Wei opaque portion (see (_ The result of the correction of the New Zealand Laiqi, causing the correction film 50 to exceed the pattern of the peripheral light transmission portion that does not need to be corrected (see (9)). These figures show that the sum can be formed or removed by the ! The minimum plus 1 size is corrected for the same width defect

S 7 201232164 模樣’惟依據不同的修正誤差， 困難。當然對於比能以i次性修 =精度修正會有 之最小加工尺寸來得小的遮 是^^是去除 正確尺寸之修正。 思先部無法達到 上述修正適用於在光穿透率控制部所使用之 上述解析極限以下的微細圖案，則該 2用之 透率會變得較既定範圍來得高(來得低)，=用：穿 =於被轉印體上所形成之光阻圖案：狀2 會發;動：，通道部等扮演㈣重要功能之部; 樣地ίί::微細圖案也會因為精度惡化這點同 以下、尤其是Ιμιη 如上述般，要修正微細圖案（3gm 以下的線寬)有其困難。 是以，本發明之目的在於提供一種光罩缺陷修正 法，針對難以利用修正裝置進行修正之於微細圖案所產 生之缺陷，能以高精度進行修正。此外，本發明之目的 在於提供-種適帛賴歸正方法之鮮製造方法、使 用該缺陷修正方法所製作之料、以及使用該光罩之圖 案轉印方法。 本發明者為了解決上述課題經過努力檢討之結果 乃完成了本發明。本發明具有以下構成。 (構成1) 一種光罩缺陷修正方法，係將形成於透明基板上之 201232164 遮光膜經圖案化所形成之具有透光部與遮 所產生之剩餘缺陷以缺陷修正裝置來纟之光罩 在於包含下述製程：膜去除製程，係將位丁其特徵 剩餘=以及和具有該剩餘缺陷之 部之遮絲之-部奸㈣時去除； 1遮光 係於該膜去_財絲了遮光默7成= 呈， 部形成修正膜；其中，於該 、丨刀的5亥遮光 係對於具有較以該缺陷修正裳置：二斤進行之獏形成 能形成之最小_絲度料之人m操作所 (構成2) mi度之遮先部來進行。 -種光罩缺陷修正方法，係將形成於透 卿叙具錢光軸料部之光罩 户於勺缺陷⑽陷修正裝置來進行修正；其特徵 it 1下述製程··第1膜去除製程，係將位於透光部 =餘^以及和具有_餘缺陷之透光部鄰接之 将料ί細之—部分予簡時去除；卿成製程， 1膜去除製程巾已去除遮光膜之—部分的該 遮光部以及鄰接於_光部之第2透光部形成修正 膜，以及第2膜去除製程，係將形成於該第2透光部之 該修正膜予以去除；其巾於該第2膜去除餘所進行之 膜去除係對於具有較以該缺陷修正裝置之一次性修正 ，作所能去除之最小膜去除寬度來得大寬度之透光部 來進行。 (構成3) 5 201232164 如前述構成1或2之光覃 該剩餘缺陷之透光部侍4:缺陷修正方法，其中具有 度。除之最小膜去除寬度來得小之寬 (構成4) 膜形成製程=S;二陷修正方法’其中於該 之遮光部之邊緣一致。/ >正膜之邊緣和該鄰接 (構成5) 如前述構成1或2之光罩缺陷％正方法甘士 餘缺陷係包含該修正膜。 K正方法’其中該剩 (構成6) 遮光方法，係將形成於透明基板上之 來進行修正‘ :之。卩刀的區域形成修正膜；以及膜去除製程 1於該_成製程中所形成之該透光部之修正膜予 =除’其中於該縣除製賴進行之膜絲係對於2 ^父以該缺陷修正裝置之—次性修正操作所 ς 最小膜去除寬度來得大寬度之透光料進行。示之 (構成7) -種光罩缺陷修正方法，係將形成於透明基板上之 201232164 遮，膜經圖案化所形成之具有透光部與遮光部之光罩 ，生之缺漏缺㈣缺陷修正裝置來進行修正；其 =包含有下述製程：第1膜形成製程，係於包含位於 =，該缺漏缺陷以及和具有該缺漏缺陷之遮光部 分的區域形祕正膜；膜去除製 ^胺、第1獅成製財職於該透光部之該修 t 該透光部之第2遮光部之遮光膜之二 除製程中係於該膜去 修正膜；其中該第2膜开f成一^的該第2遮光部形成 且古妒M形成製程所進行之膜形成係對於 i最二正裝置之—次性修正操作所能形成 = 度來得大寬度之遮光部來進行。S 7 201232164 looks 'depending on the difficulty of different correction errors. Of course, a small mask for a minimum processing size that can be corrected by i-time correction = accuracy is a correction to remove the correct size. If the above-mentioned correction is not applicable to the fine pattern which is applied to the above-described analysis limit used by the light transmittance control unit, the transmittance for the two uses becomes higher than the predetermined range (lower), and =: Wear = the pattern of the photoresist formed on the transferred body: the shape 2 will be emitted; the movement: the channel part plays the part of the (four) important function; the sample ίί:: the fine pattern will also deteriorate due to the accuracy, In particular, Ιμιη As described above, it is difficult to correct the fine pattern (line width of 3 gm or less). Accordingly, an object of the present invention is to provide a mask defect correction method capable of correcting defects caused by a fine pattern that is difficult to be corrected by a correction device. Further, it is an object of the present invention to provide a fresh manufacturing method suitable for the correction method, a material produced by using the defect correction method, and a pattern transfer method using the photomask. The present inventors have completed the present invention as a result of an effort to review the above problems. The present invention has the following constitution. (Configuration 1) A method for correcting a mask defect by patterning a 201232164 light-shielding film formed on a transparent substrate, and having a light-transmitting portion and a remaining defect caused by the mask, the mask is provided by the defect correcting device. The following process: the film removal process is removed when the characteristic remaining = and the occlusion of the remaining defect is removed (4); 1 shading is attached to the film. = The portion is formed into a correction film; wherein, the 5 ray shading system of the trowel is used to have a minimum _ silk material which can be formed by forming a defect with the defect: It consists of 2) the first part of the mi degree. - A method for correcting a mask defect, which is to be corrected by a mask of a mask (10) trapped in a mask of a light-shielding portion of a transparent material; the feature is 1 the following process · The first film removal process , the portion of the light-transmissive portion is removed from the light-transmitting portion and the light-transmitting portion adjacent to the light-transmissive portion having a residual defect; the process is removed; the process of removing the light-shielding film is removed. The light shielding portion and the second light transmitting portion adjacent to the light portion form a correction film, and the second film removing process removes the correction film formed in the second light transmitting portion; The film removal performed by the film removal is carried out for a light-transmitting portion having a large width which is smaller than the minimum film removal width which can be removed by the one-time correction of the defect correction device. (Construction 3) 5 201232164 The light-emitting portion of the remaining defect is as described above, and the defect correction method has a degree. In addition to the minimum film removal width, the width is small (constitution 4) film formation process = S; the second depression correction method 'which is uniform at the edges of the light shielding portion. / > Edge of the positive film and the abutment (Configuration 5) The mask defect % positive method of the above configuration 1 or 2 includes the correction film. The K positive method' in which the remaining (construction 6) shading method is formed on the transparent substrate is corrected. a correction film is formed in a region of the trowel; and a correction film of the light transmission portion formed in the film removal process 1 in the process of the smelting process is replaced by a film wire system in which the film is made in the county for 2 The defect correction device performs a sub-correction operation with a minimum film removal width to obtain a large width of the light-transmitting material. (Structure 7) - A method for correcting a mask defect is a mask having a light-transmitting portion and a light-shielding portion formed by patterning a layer formed on a transparent substrate, which is formed by patterning on a transparent substrate, and having a light-shielding portion and a light-shielding portion. The device is modified; it includes the following process: the first film forming process is carried out by including a region-shaped secret film located at =, the missing defect and the light-shielding portion having the missing defect; the film is removed to form an amine, The first lion is formed in the light-transmitting portion, and the second light-shielding portion of the light-transmitting portion is disposed in the film-removing film; wherein the second film is opened into a ^ The film formation by the formation of the second light-shielding portion and the formation process of the ancient 妒M is performed by forming a light-shielding portion having a large width for the second-order correcting operation.

(構成8) J wt1!述構成6或7之光罩缺陷修正方法，立中且有 该缺漏缺陷之遮光部係捉、:有 次性修正餐所能料^似賴㈣正裝置之〜 度。 所月4成之最小膜形成寬度來得小之寬 (構成9) 如前述構成6或7之光罩缺陷修 该膜去除製程中係使得所去邊、於 光部之邊緣一致。 I止膜之邊緣和遠透 (構成10) 如刖述構成6或7之光罩缺陷佟正 漏缺陷係包含㈣缺陷修正枝錄了遮光狀區2 201232164 (構成11) 中且二 成卜2、6或7之光罩缺陷修正方法，其 光部或是具有該缺漏缺陷 (構成12) :種鮮缺陷修正方法，係㈣成於透 案化所形成之具有透光部與 ，產生之缺陷以雷射缺陷修正裝置來進行修正；盆特徵 罩係具有由透光部與遮光部所交互排;;而成 之圖案區域；該圖案區域係具有：較以該缺陷修正裝^ 之1次性修正操作所能去除之最小膜 寬度之透光部;較以該缺陷修正裝置之!次=;二 所能形成之最小膜形成寬度來得小寬度之遮光部；以及 較修正裝置之1次性修正操作所能去除之最 小膜去除寬度來得大寬度之透光部；且具有下述製程： ^程㈧’係特定出自該大寬度之透光部起交互依序數 算構成該圖案區域之該小寬度之遮光部與該小寬度之 透光。I5時具有缺Pd會成為最大數之遮光部或是透光 部；製程(=1)’當藉由該製程⑷特定了遮光部之時， 於該已特定之遮光部之缺漏缺陷形成修正膜進行修 正’且於該遮光部之和該大寬度之透光部㈣接之透光 部（a)同時暫定形成修正膜；或是製程(B_2)，當藉由該 製程(A)特定了透光部之時，去除該已特定之透光部之 剩餘缺陷進行修正，且將該透光部之和該大寬度之透光 201232164 (c)定去除，·以及製程 區域所產生之剩餘缺陷或是之部分當作該圖案 製程以及該(B-1)梦程或σ :、口，而反覆進打該(A) -犬-Ο ~ 之透光部的剩餘缺陷予以 (構成13) Π域；該圖案區域係*··較以該缺陷修正裝= 之作㈣去除之最錢去除寬度來得小寬产 之透先部'較以該缺陷修正裝 見度 形成之最小膜形成寬度來得小寬度二光;正:= 麵A)’係特定出自該大寬度之遮光部：互： _一，當藉=製為:(:)數^ …於該已特定之遮光部之缺職陷形 膜= 正’且於該遮光部之和該大寬度之遮光部甸鄰== 13 201232164 部(a)同時暫定形成修正膜；或是製程(B_2)，卷 製程(A)特定了透光部之時，將該已特定之透光 餘缺陷hx去除進行修正，且將該透光部之和 ^ 之遮光部側鄰接之遮光部(a》之—部分同時暫 見= 程(Q ’係將該已暫定形成或是暫定去除之部分^^ 該圖案區域所產生之剩餘缺陷或是缺漏缺陷，而二進 行該(A)製程與該㈢）製程或是該(B2)製程之 製程，當於該(B·2)製程中該遮光部⑻和該大寬;:之遮 先部成為-致時，對形成於該大寬度之 ς 陷進行修正。 丨<缺漏缺 (構成14) 方：V2、6、7、12或13之光罩缺陷修正 陷修正裝置之韻形成係以雷射 •正穿除係以雷射照射來進行，以該缺 次性修正操作所能去除之最小膜去除ί 度為1 μηι以上。 (構成15) -種光罩製造方法，輕造形成於 之 光膜經圖案化所得之具有逆伞 圯 徵在於具有下述製程光罩；其特 光膜之空自絲罩H⑭顧縣板上形成有遮 ，圖案化製程，係藉由光微影 ==案化以形成至少具有遮光部與透光 权轉印圖案，以及修正製程，係對於所形成之該轉印 201232164 ST生广缺陷進行修正;該修正製程中，係適用上 6、7、12或13之光罩缺陷修正 (構成16) 电 所狀係形成於透明基板上之遮光膜經圖案化 係且有^敎光罩；其特徵在於該光罩 係具有·透先部，係較以雷射缺 :=去域 Τ修正操作所能形成之最小膜形(Structure 8) J wt1! The method of correcting the mask defect of the configuration 6 or 7, the light-shielding part of the missing defect is caught, and the sub-correction meal can be expected to be (4) the positive device. . The minimum film formation width of 40% is made small (Structure 9). The mask defect of the above-described composition 6 or 7 is repaired in the film removal process so that the edges of the removed portions are uniform at the edges of the light portions. I. The edge of the film and the far-reaching (construction 10). As described in detail, the reticle defect of the composition 6 or 7 is covered by the defect. (4) The defect correction is recorded in the opaque zone 2 201232164 (constitution 11) and the second is 2 The method for correcting the mask defect of 6 or 7, the light portion or the defect having the defect (constitution 12): the method for correcting the fresh defect, wherein the (four) is formed by the transparent portion and has a light-transmitting portion and a defect Correcting with a laser defect correction device; the basin feature cover has a pattern region formed by the light-transmitting portion and the light-shielding portion; the pattern region has: a first-order correction with the defect correction device Correcting the light-transmissive portion of the minimum film width that can be removed by the operation; the light-receiving portion having a small width formed by the minimum film forming width which is formed by the defect correction device; and the one-time correction of the correction device The minimum film removal width that can be removed by the operation to obtain the light-transmissive portion of the large width; and the following process: ^ (8)' is to specify the small width of the pattern region from the light-transmitting portion of the large width The light shielding portion is transparent to the small width. When I5 is absent, Pd becomes the largest number of light-shielding parts or light-transmitting parts; Process (=1) 'When the light-shielding part is specified by the process (4), a correction film is formed on the defect of the specific light-shielding part Performing the correction' and simultaneously forming the correction film at the same time as the light-transmitting portion (4) of the light-transmitting portion and the large-width light-transmitting portion (4); or the process (B_2), when the process (A) is specified At the time of the light portion, the remaining defects of the specific light-transmitting portion are removed for correction, and the light-transmitting portion and the large-width light-transmitting 201232164 (c) are removed, and the remaining defects generated by the process region or It is partly used as the pattern process and the (B-1) dream course or σ:, mouth, and the remaining defects of the light transmission part of the (A)-dog-Ο~ are repeated (constitution 13) The pattern area is smaller than the minimum film removal width obtained by the defect correction package (4), and the minimum width of the film is smaller than the minimum film formation width formed by the defect correction visibility. Two light; positive: = face A) 'specifically from the large width of the shading: mutual: _ one, when borrowing = system is: (:) number ^ ... The defective portion of the specific light-shielding portion = positive 'and the light-shielding portion of the light-shielding portion and the large-width light-shielding portion of the neighboring area == 13 201232164 part (a) tentatively forming a correction film; or process (B_2) When the winding process (A) specifies the light transmitting portion, the specific light-transmissive residual defect hx is removed and corrected, and the light-shielding portion (a) adjacent to the light-shielding portion side of the light-transmitting portion is- Partially temporary; = (Q' is the part of the pattern that has been tentatively formed or temporarily removed ^^ the remaining defects or missing defects in the pattern area, and the second (A) process and the (3)) process or It is the process of the (B2) process, in which the dam portion (8) and the large width are formed in the (B.2) process, and the sag formed in the large width is corrected.丨<missing (construction 14) side: V2, 6, 7, 12 or 13 of the reticle defect correction trap correction device is formed by laser/positive puncturing by laser irradiation. The minimum film removal that can be removed by the secondary correction operation is 1 μηι or more. (Configuration 15) - A method of manufacturing a mask, lightly formed in the light The film obtained by patterning has a reverse umbrella mark with the following process mask; the space of the special light film is formed by the cover of the wire cover H14 Guxian, and the patterning process is performed by light lithography== To form at least the light-shielding portion and the light-transmitting weight transfer pattern, and to modify the process, to correct the formed defect of the transfer 201232164 ST; in the correction process, the application is 6, 6, 12 or 13 Mask defect correction (constitution 16) The light-shielding film formed on the transparent substrate is patterned and has a mask; the mask has a transparent portion, which is less than a laser :=De-domain Τ correct operation can form the smallest film shape

遮部與較以該缺陷修正裝置之1 -人丨生修正刼作所能去除之最小膜 罝I 之透光部依此順序交互排列所得者，·::= ==、=光部即第-遮_二 -遮光部與該大寬度之觀界邊、^成為該第 由該雷射缺陷修正裝置去除該修正分二為藉 (構成17) 膜而形成之邊緣。 如如述構成16之光罩，往 最接近第-遮光部之位置的第1遮=案區域中存在於 一遮光部之修正難第二遮光部之成修正膜；第 係小於以雷射缺陷修正裝置之丨膜之間的距離 除之最小膜去除寬度。 _ 人性修正操作所能去 (構成18) 如前述構成16或17之光罩，其中於形成有該修正The light-transmitting portion of the smallest film 罝I which can be removed by the one-person correction correction device of the defect correction device is arranged in this order, and:::=====light portion The occlusion-two-light-shielding portion and the boundary edge of the large width are the edges formed by the laser defect correction device to remove the correction component (the structure 17). As described above, the photomask of the configuration 16 is formed in the first mask region closest to the first light-shielding portion, and is formed in the correction mask of the shading portion of the shading portion; the first system is smaller than the laser defect. Correct the distance between the diaphragms of the device divided by the minimum membrane removal width. _ Human correction operation can be performed (Configuration 18) The reticle of the above configuration 16 or 17, wherein the correction is formed

S 15 201232164 膜之$光：之個別的修正膜中該大的透光部側的邊緣 係包s ^除该修正膜之邊緣，而和該大的透 相 反側的邊緣不包含已去_修之邊緣。 (構成19) 一種圖案轉印方法，係使用以構成15之製造方法 所得之光罩與曝光裝置來對被轉印體上進行圖案轉印。 (構成20) 1 一種圖案轉印方法’係使用上述構成18之光罩與 曝光裝置來對被轉印體上進行圖案轉印。 ，據本發明’可對於光罩中之微細圖案所產生之缺 陷來南精度進行修正。尤其針對比雷射之最小加工尺寸 來知小的線寬之圖案(例如1μιη以下的微細目案）所產 生之缺陷，可藉由基於雷射照射之剩餘部分的去除、以 及基;M CVD之修正朗形成來高精度進行修正。 此外，依據本發明，可提供一種適用本發明之光罩 缺陷修正方法的光罩製造方法、使用該缺陷修正方法所 製作之光罩、以及使用該光罩之圖案轉印方法。 【實施方式】 以下’針對實施本發明之形態參見圖式來詳述。 〔第1實施形態〕 於本實施形態係針對光罩缺陷修正方法進行說 明’係將具有透光部與遮光部（於透明基板上所形成之 遮光膜經圖案化所形成者）之光罩所產生之缺陷依照本 發明而使用缺陷修正裝置加以修正。S 15 201232164 The light of the film: the edge of the large transparent portion of the individual correction film is s ^ except for the edge of the correction film, and the edge of the opposite side of the large transparent surface does not contain the edge. (Configuration 19) A pattern transfer method in which pattern transfer is performed on a transfer target by using a photomask and an exposure apparatus obtained by the manufacturing method of the composition 15. (Structure 20) 1 A pattern transfer method ′ is a pattern transfer on a transfer target using the photomask and the exposure device of the above configuration 18. According to the present invention, the accuracy of the defect caused by the fine pattern in the photomask can be corrected. In particular, the defect caused by the pattern of a small line width (for example, a fine mesh of 1 μm or less) which is smaller than the minimum processing size of the laser can be obtained by the removal of the remaining portion based on the laser irradiation, and the basis; M CVD Corrected the formation of the Lang to correct the high precision. Further, according to the present invention, there is provided a reticle manufacturing method to which the reticle defect correcting method of the present invention is applied, a reticle produced using the defect correcting method, and a pattern transfer method using the reticle. [Embodiment] Hereinafter, the form of the present invention will be described in detail with reference to the drawings. [First Embodiment] In the present embodiment, a mask defect correction method will be described. A mask having a light-transmitting portion and a light-shielding portion (formed by patterning a light-shielding film formed on a transparent substrate) is used. The resulting defects are corrected in accordance with the present invention using a defect correction device.

16 201232164 “ 此外，於本發明中，遮光部可視為設計上待形成遮 光膜之區域，而即便例如因發生缺陷造成該部分之遮光 膜缺漏之情況，有時也將該部分稱為遮光部。此外，透 光部可視為設計上透明基板露出之區域，而即便因發生 缺陷而殘存遮光膜之情況，有時也稱為透光部。 此外，於本發明中，除了於光罩之製造階段非預期 地於遮光部所產生之缺漏缺陷以外，有時也包含在施行 缺陷修正方法之過針，刻意地去除了遮光部之遮光膜 者。同樣地，關於剩餘缺陷，除了於光罩之製造階段非 預期地於透光部所產生之剩餘缺陷，冑時也包含在施行 缺陷修正方法之過程巾，刻意於透光部形成遮光性修正 膜。 此外，於本發明中，將於遮光部所產生之缺漏缺陷 形成修正膜之製程、去除透光部所產生之缝缺陷之製 程總稱為修正製程。 圖1係顯示本發明之光罩缺陷修正方法的第i實施 形態之俯視圖.，其例示之圖案之修正製程，該圖案所具 有之透光部的寬度係較於需要修正之區域附近利用缺 陷修正裝置以1次性修正操作而可去除之最小加工尺 寸（亦即能以丨次性修正操作來去除之最小膜絲寬 來得大。 如圖1(A)所示般’上述光罩所具有之圖案係具有： 線-間距(line and sp㈣之圖案區域(其為透光部2τ，3τ 與遮光部1S，2S，3S交互排列所得者，該透光部2Τ3Τ16 201232164 " Further, in the present invention, the light shielding portion may be regarded as a region on which a light shielding film is to be formed, and even if, for example, a portion of the light shielding film is missing due to a defect, the portion may be referred to as a light shielding portion. Further, the light transmitting portion may be regarded as a region in which the transparent substrate is exposed, and may be referred to as a light transmitting portion even if a light shielding film remains due to a defect. Further, in the present invention, in addition to the manufacturing stage of the photomask Unexpectedly, in addition to the missing defects generated in the light-shielding portion, the light-shielding film in which the light-shielding portion is intentionally removed may be included in the method of performing the defect correction method. Similarly, regarding the remaining defects, in addition to the manufacture of the mask The remaining defects generated in the light-transmitting portion are unexpectedly included in the process of performing the defect correction method, and the light-shielding correction film is formed in the light-transmitting portion. Further, in the present invention, the light-shielding portion is The process of forming the correction film to form the correction film and the process of removing the seam defect generated by the light transmission portion is generally referred to as a correction process. FIG. 1 is a view showing the mask of the present invention. A plan view of the i-th embodiment of the trapping correction method. The exemplary pattern correction process has a width of the light transmitting portion of the pattern which is comparable to the area to be corrected by the defect correcting device. The minimum processing size to be removed (that is, the minimum film width that can be removed by the linear correction operation is large. As shown in Fig. 1(A), the pattern of the above-mentioned mask has: line-space (line) And the pattern area of sp (four) (which is the light-transmitting portion 2τ, 3τ and the light-shielding portions 1S, 2S, 3S are alternately arranged, the light-transmitting portion 2Τ3Τ

S 17 201232164 之寬度係較例如使用雷射之缺陷修正裝置卩i次性修 正細作所能錄之最㈣去除寬度(㈣也稱為最小加 Z寸)來得小’該遮光部1S，2S，SS之寬度係較利用缺 置U 1次性修正操作所能形成之最小膜形成 見度（有時杨騎小加卫尺寸）來得小）、以及透光部 it(在該圖案區域之圖案排列方向上鄰接於上述遮光部 1S，所具有之I度係較基於缺陷修正裝置以1次性修正 操作所能去除之最小膜去除寬度來得大）。上述遮光部 係於透明絲上軸具有遮紐之遮紐，上述透光部 係以透明基板露出之狀態而形成。 於本發明巾H次性修正操作所形成之最小膜 形成寬度乃修正裝置可形成修正膜之最小寬度（例如 Ιμιη以上）’而使得修正膜成為和遮光膜同樣地不致實 質性抽失遮紐的财’而以-她修正操作所能去除 之最小膜去除寬度乃所使用之修正裝置所能去除膜之 最小寬度(例如Ιμιη以上）。於本樣態中，係將使用修正 裝置(藉由雷射照射來去除膜、藉由雷射CVD來形成修 正膜）而以一次性修正操作所能形成之最小膜形成寬度 設定為Ιμιη，此外，將一次性修正操作所能去除之最小 膜去除寬度設定為1μιη來說明。此外，此處 去除與膜形成中之最小加工尺寸為相等之 明，惟此等可為相同亦可為互異之數值。 圖1 (A)係顯示上述圖案區域當中，於較以1次.性修 正操作所能形成之最小加工尺寸來得小的寬度之遮光 201232164 部（以下也稱為「小寬度之遮光部」）is產生缺漏缺陷 10，而相鄰於此遮光部1S具有較以1次性修正操作所 能去除之最小加工尺寸來得大寬度之透光部（以下也稱 為「大寬度之透光部」）1T之圖案的修正製程。 首先，於包含圖l(A)(a)所示之於前述小寬度之遮 光部1S所產生之前述缺漏缺陷1〇與鄰接於產生該缺漏 缺陷ίο之遮光部is的前述大寬度之透光部it之一部 分之區域，形成和前述遮光膜具有同等遮光性之修正膜 3(參見圖i(A)(b))。此時，將形成修正膜3之形狀設定 為矩形狀，並使得此矩形狀之一邊能和前述遮光部ls 之透光部2T側的邊緣位置一致乃為較佳者。此處，在 形成有修正膜之遮光部1S會修正缺漏缺陷，但於透光 部1T也形成有修正膜，而會成為形成有新的剩餘缺 陷。此外，也可視為於透光部1T暫時形成之修正膜。 其次，將前製程中形成於大寬度之透光部1Τ的修 正膜3加以去除（參見圖l(A)(c))。此時，將透光部汀 中去除形祕謂3之形狀蚊核形狀之膜去除部 4，而使得此矩形狀之一邊和遮光部岱在透光部丨丁側 ^邊緣位置能一致為佳。藉此，圖1(A)⑷所示之於小 見度之遮光部1S所產生之缺漏缺陷1G可被高精度修 正。 夕 此外’圖1(B)係顯示於較以丨次性修正操作所能去 ，之最小加工尺寸來得小寬度之透光部（以下也稱為 小寬度之透光部」）2T產生剩餘缺陷u，而鄰接於此 201232164 透光部2T依序具有上述小寬度之遮 透光部1Τ之圖案的修正製程。 、大寬度之 取^之所示之於前述小寬度之透光部 玍之刖述剩餘缺陷η以及鄰接 陷11之透光部2Τ的小寬产 ；生k剩餘缺 部分加以同時去來岡^ ''' 〇 S的遮光膜之一 缺等之形狀設定為矩形狀之臈 夺去:= 矩形狀之-邊和遮光部23之透光邱⑺除。15 2 ’使付此 -致為佳。此L二先。口側的邊緣位置相 作遮光邻i 錢部21之_缺_被修正，The width of S 17 201232164 is smaller than the maximum (4) removal width ((4) also called the minimum plus Z inch) which can be recorded by the defect correction device 雷i sub-correction of the laser, for example, the shading part 1S, 2S, SS The width is smaller than the minimum film formation visibility (sometimes Yang riding small plus size) which can be formed by the missing U 1 correction operation, and the light transmission part it (the pattern arrangement direction in the pattern area) The first degree adjacent to the light shielding portion 1S is larger than the minimum film removal width that can be removed by the defect correction device by the one-time correction operation. The light-shielding portion is formed on the upper side of the transparent filament, and the light-transmitting portion is formed in a state in which the transparent substrate is exposed. The minimum film formation width formed by the H-order correction operation of the present invention is such that the correction device can form the minimum width of the correction film (for example, Ιμηη or more), so that the correction film becomes substantially the same as the light-shielding film. The minimum film removal width that can be removed by her correction operation is the minimum width of the film that can be removed by the correction device used (eg, Ιμιη or more). In this aspect, the minimum film formation width which can be formed by one-time correction operation is set to Ιμιη using a correction device (the film is removed by laser irradiation, and the correction film is formed by laser CVD). The minimum film removal width that can be removed by the one-time correction operation is set to 1 μm. Further, the removal is the same as the minimum processing size in film formation, but these may be the same or different values. Fig. 1(A) shows a light-blocking layer of 201232164 (hereinafter also referred to as "small-width light-shielding portion") which is smaller than the minimum processing size which can be formed by the one-time correction operation among the pattern regions. The missing defect 10 is generated, and the light-shielding portion (hereinafter also referred to as "large-width light-transmitting portion") 1T having a large width which is smaller than the minimum processing size which can be removed by the one-time correcting operation is formed adjacent to the light-shielding portion 1S. The correction process of the pattern. First, the above-mentioned missing defect 1〇 generated by the light-shielding portion 1S having the small width shown in FIG. 1(a)(a) and the aforementioned large-width light transmission adjacent to the light-shielding portion is generating the missing defect ίο A region of one part of the portion is formed with a correction film 3 having the same light-shielding property as the aforementioned light-shielding film (see Fig. i(A)(b)). At this time, it is preferable to set the shape of the correction film 3 to have a rectangular shape, and to make one of the rectangular sides coincide with the edge position of the light-shielding portion 2T side of the light-shielding portion ls. Here, the light-shielding portion 1S in which the correction film is formed corrects the missing defect, but the correction film is also formed in the light-transmitting portion 1T, and a new residual defect is formed. Further, it can also be regarded as a correction film temporarily formed in the light transmitting portion 1T. Next, the correction film 3 formed in the large-width light-transmitting portion 1A in the pre-process is removed (see Fig. 1(A)(c)). At this time, the film removing portion 4 of the shape of the mosquito core having the shape of 3 is removed from the light transmissive portion, so that the one side of the rectangular shape and the side of the light shielding portion are uniformly aligned at the edge of the light transmitting portion. . Thereby, the missing defect 1G generated by the small-area light-shielding portion 1S shown in Figs. 1(A) and (4) can be corrected with high precision. In addition, 'Fig. 1(B) shows that the light-transmissive portion (hereinafter also referred to as a small-width light-transmitting portion) having a small width can be obtained by the minimum processing size, and the remaining defects are generated. u, and adjacent to this 201232164, the light transmitting portion 2T sequentially has a correction process for the pattern of the light-transmitting portion 1Τ having the small width described above. The large width is taken as shown in the above-mentioned small-width light-transmissive portion, and the remaining defect η and the small-width production of the light-transmitting portion 2Τ adjacent to the trap 11 are produced; ''' The shape of one of the light-shielding films of 〇S is set to a rectangular shape: = rectangular-side and light-shielding of the light-shielding portion 23 (7). 15 2 ‘To pay this – it’s better. This L two first. The edge position on the side of the mouth is opposite to the shading of the money section 21

制去除之部分職為缺漏缺陷。亦 即為修正製程中暫時受到膜去除之部分。 I 狀離圖:二)(，顯示如此般去除剩餘缺陷11等之後的 : 狀.vl僅在小寬度之遮光部ls所產生之缺 =::Λ小有所不同，實質上則和上述圖糊 _ η永々忒木修正。換δ之，圖l(A)(a)所 不之 >正方法可單獨實施，此外，亦可做為—連串修正 作業之最後製程來實施。 亦即，於包含圖l(B)(b)所示之前述製程中所產生 之J寬度之遮光部1S之遮光膜被部分去除之缺漏缺陷 =及鄰接於該遮光部1S之前述大寬度之透光部 1T之一 部分的區域’形成和前述遮光膜具有同等遮光性之修正 2 3(參見圖1(B)⑷）。亦即，於去除了遮光膜之遮光部 虽中之至少去除了遮光膜之區域進行膜形成 。此畸，將Part of the system is missing defects. This is the part of the correction process that is temporarily subjected to film removal. I-shaped diagram: 2) (, after showing the removal of the remaining defects 11 and so on: shape. vl only in the small width of the light-shielding part ls produced by the lack of =:: small difference is different, in essence, and the above figure Paste _ η 永 々忒 修正 。 。 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换 换a defect in which the light-shielding film of the light-shielding portion 1S having the J width generated in the above-described process shown in FIG. 1(B)(b) is partially removed = and a light transmittance adjacent to the aforementioned large width of the light-shielding portion 1S The region 'a portion of the portion 1T has a correction 2 3 having the same light-shielding property as the light-shielding film (see FIG. 1(B)(4)). That is, at least the light-shielding film is removed from the light-shielding portion from which the light-shielding film is removed. Film formation in the area. This distortion will

20 201232164 —成t正膜3之形狀設定為矩形狀，並使得此矩形狀之 為^和前述遮光部1S之透光部2T側的邊緣位置相一致 除其次’將形成於大寬度之透光部1T之修正膜3去 f參見圖。此時，將透光部1T中去除修正膜 之2形狀設定為矩形狀之膜去除部4，並使得此矩形狀 佳，和遮光部13之透光部1τ侧的邊緣位置相一致為 。藉此，於圖l(B)(a)所示之小寬度之透光部2Τ所產 之剩餘缺陷11可被高精度修正。 漏=外，圖i(C)係顯示於小寬度之遮光部2S產生缺 之缺陷10，而相鄰於此遮光部2S依序具有上述小寬度 透光。卩2T、小寬度之遮光部is、大寬度之透光部1T 之圖案的修正製程。 百先 匕έ圖1(c)(a)所示之於前述小寬度之遮 二2S所產生之前述缺漏缺陷1〇以及鄰接於產生該缺 的。、陷10之遮光部2S的小寬度之透光部2T之-部分 間區域’形成和遮光膜具有同等遮光性之修正膜！(參見 :l(C)(b))。此時，將形成修正膜】之形狀設定為矩形 、，使得此矩形狀之—邊和前述遮光部之透光部打 =的邊緣位置相—料佳。此外，基独丨姐修正操 所能形成之最小加工尺寸的關係，於鄰接於上述透光 2了之小見度之遮切ls上也形成修正膜1。圖l(C)(b) ，顯示如此般形成了修正膜i後之狀態，而此狀態僅在 ’、寬度之透光部2T所產生之剩餘缺陷的形狀、大小有 21 201232164 所不同，實質上則和上述圖1(B)(a)為同樣狀態。從而， 以後之修正能以和從圖1(B)(a)開始的修正作業為 方法來修正。 ^ 亦即’將圖i(c)(b)所示之前述製程中所產生之小 寬度之透光部2T之因修正膜1所造成之剩餘缺陷以及 鄰接於該透光部2T之小寬度之遮光部1S之遮光膜以及 修正膜1之一部分加以同時去除（參見圖UCXc))。此 時，將去除剩餘缺陷等之形狀設定為矩形狀之膜去除部 2，並使得此矩形狀之一邊和遮光部2S在透光部側 的邊緣位置相一致為佳。 其次，於包含圖l(C)(c)所示之前述製程中所產生 之小寬度之遮光部1S之遮光膜受到部分去除後之缺漏 缺陷以及鄰接於該遮光部is之前述大寬度之透光部1T 之-部分的II域，來職和遮細具有同等遮光性之修 正膜3(參見圖1(C)(d))。其次，去除於大寬度之透光部 1T所形成之修正臈3(參見圖i(〇(e))。 藉此，於圖RC)⑷所示之小寬度之遮光部2S所產 生之缺漏缺陷1〇可被高精度修正。 述奴’於本發明中，修正膜可使用以雷射CVD 3成之薄膜。在雷射CVD之雷射光源方面可使用 八^雷^、半導體f射等可將修正狀補氣體加以 疋產生化學反應而於鮮上形成膜者，通過光學 二而！tf*、罩上之所需區域使得所需強度之雷射光來 ▲彳得被供給之原料氣體產生分解或是化學反應等20 201232164—The shape of the positive film 3 is set to a rectangular shape, and the rectangular shape is made to coincide with the edge position of the light-transmitting portion 2T side of the light-shielding portion 1S, and secondly, it will be formed in a large-width light transmission. The correction film 3 of the portion 1T is shown in the figure. At this time, the shape of the correction-removed film 2 in the light-transmitting portion 1T is set to a rectangular film-removing portion 4, and this rectangular shape is preferably made to coincide with the edge position of the light-shielding portion 13 on the side of the light-transmitting portion 1τ. Thereby, the remaining defects 11 produced by the light-transmitting portion 2 of the small width shown in Fig. 1(B)(a) can be corrected with high precision. In the case of the leak = outside, the figure i (C) is shown in the small-width light-shielding portion 2S to produce the missing defect 10, and the light-shielding portion 2S adjacent thereto has the above-described small-width light transmission.修正 2T, a small-width light-shielding portion is, and a correction process for the pattern of the large-width light-transmitting portion 1T. The first missing defect 1〇 generated by the aforementioned small width mask 2S shown in Fig. 1(c)(a) is adjacent to the defect. The portion of the light-transmitting portion 2T having a small width of the light-shielding portion 2S of the recess 10 is formed with a correction film having the same light-shielding property as the light-shielding film! (See :l(C)(b)). At this time, the shape of the correction film is set to be rectangular, so that the edge of the rectangle and the edge of the light-transmitting portion of the light-shielding portion are good. Further, the relationship between the minimum processing size which can be formed by the correction operation of the base is also formed on the mask ls adjacent to the small transparency of the above-mentioned light transmission. Fig. 1(C)(b) shows the state in which the correction film i is formed in this manner, and the state differs only in the shape and size of the remaining defects generated by the width portion 2T of the width of 21 201232164. The upper state is the same as the above-described FIG. 1(B)(a). Therefore, the subsequent correction can be corrected by the correction operation starting from Fig. 1(B)(a). ^ That is, the remaining defects caused by the correction film 1 and the small width adjacent to the light transmitting portion 2T of the small-width light transmitting portion 2T generated in the above-described process shown in Fig. i(c)(b) The light-shielding film of the light-shielding portion 1S and a portion of the correction film 1 are simultaneously removed (see FIG. UCXc)). At this time, it is preferable to remove the film removal portion 2 in which the shape of the remaining defect or the like is set to a rectangular shape, and it is preferable that one of the rectangular shape and the light shielding portion 2S are aligned at the edge position on the light transmission portion side. Next, the light-shielding film of the light-shielding portion 1S having the small width generated in the above-described process shown in FIG. 1(C)(c) is partially removed, and the above-mentioned large width is adjacent to the light-shielding portion is The II field of the portion of the light portion 1T, the incoming film and the masking film 3 having the same light blocking property (see FIG. 1(C)(d)). Next, the correction 臈3 formed by the light-transmissive portion 1T having a large width is removed (see Fig. i (〇(e)). Thereby, the missing defect generated by the small-width light-shielding portion 2S shown in Fig. RC) (4) 1〇 can be corrected with high precision. In the present invention, a film formed by laser CVD 3 can be used as the correction film. In the laser source of laser CVD, it is possible to use a modified gas to generate a chemical reaction and to form a film on the fresh surface, such as an optical ray. Tf*, the required area on the cover makes the laser light of the required intensity ▲ the decomposition of the supplied raw material gas or chemical reaction

22 201232164 罩上形成膜°為了利用雷射來定量^穩定地進行 之分解、反應，雷射與其使用進行短時間照射 氏雷射，不如採行可連續照射(C\v)或是與其相對 應L即便是脈衝雷射，若每單位時間之照射數多，實質 上能成為連續照射絲使用）之樣態者。在原料氣體方 面可使用絡、_、⑦等化合物等，當中又以將此等之有 機化合物做為捕氣體來使用為佳。麻該等有機化合 物可使用六縣鉻、六幾基_、u，3,3四甲基二石夕氧 烷乙烯基二乙氧基矽烷、乙烯基三甲氧基矽烷、四甲 氧基矽烷、四乙氧基矽烷、苯基三甲氧基矽烷等。藉由 ^枓氣體之分解或是化學反應所形成之修正膜係以源 自此等原料氣體之構成物質的元素所構成。例如，修正 膜能以鉻、錮、♦、碳、氧、氫等it素來構成。 此外，當雷射之聚光區域形狀設定為矩形之情況， 可適用於邊緣包含直線部之圖案的修正，進而，若能使 用光圈（aperture)等來變更照射區域之尺寸則能對應於 複數尺寸之圖案修正，故為較佳者。 藉由使得雷射照射區域内之雷射強度分布均勻 化，賦予卿成上所必要之強度的雷射，卿成修正膜 之區域内可形成品質接近、高品質之修正膜。 、 依據本發明，藉由選擇適當的雷射強度、既定之原 料氣體條件(濃度、溫度、混合比等），則祕表面為大 致平坦’其膜厚卩遗用途或所需穿透率㈣有不同，可形 成〇.〇5μπι到3.一程度之修正膜。#考慮到修正膜因22 201232164 Forming a film on the cover. In order to use the laser to quantify the decomposition and reaction stably, the laser is used for short-time exposure to the laser. It is better to use continuous illumination (C\v) or corresponding to it. Even if it is a pulsed laser, if it has a large number of irradiation per unit time, it can be used as a continuous irradiation wire. In the case of the raw material gas, a compound such as a complex, a _, or a 7 may be used, and among these, an organic compound is preferably used as a trapping gas. Hexa et al. can use six counts of chromium, hexamethyl-, u, 3,3 tetramethyldiazepine vinyl diethoxy decane, vinyl trimethoxy decane, tetramethoxy decane, Tetraethoxydecane, phenyltrimethoxydecane, and the like. The correction film formed by the decomposition of the gas or the chemical reaction is composed of an element derived from the constituent materials of the material gases. For example, the correction film can be composed of an element such as chromium, ruthenium, ♦, carbon, oxygen, or hydrogen. Further, when the shape of the concentrating region of the laser is set to a rectangular shape, it is applicable to the correction of the pattern including the straight portion at the edge, and further, if the size of the irradiation region can be changed by using an aperture or the like, it can correspond to the plural size. The pattern correction is preferred. By uniformizing the laser intensity distribution in the laser irradiation region and providing a laser having the necessary intensity, it is possible to form a correction film of high quality and high quality in the region of the correction film. According to the present invention, by selecting an appropriate laser intensity, a predetermined material gas condition (concentration, temperature, mixing ratio, etc.), the surface of the secret surface is substantially flat 'the thickness of the film is used or the required transmittance (four) is Differently, a modified film of 〇.〇5μπι to 3. #Consider to correct the membrane factor

S 23 201232164 内部應力導致剝落或龜裂的發生、做為光罩膜之耐藥劑 性、耐久性等之情況，修正膜之膜厚以〇 1μιη到丨〇/m 之範圍為尤佳。 另一方面，做為利用雷射來去除遮光部或是透 之遮光膜、修正膜所使用之雷射光源，可使用YAG雷 射、半導體雷射。此外，為了去除遮光部或是透光部: 遮光膜、修正膜’錢用可於短時間内振盪發射高強度 雷射之脈衝振盪型雷射等為佳.此種情況下，可選擇雷 射所具有讀長、強度可將遮賴、修正膜熱、: 來熔融、紐Ml此外，於遮賴、紅膜之去除 所使用之雷射方面’和雷射CVD之情關樣地，藉由 將雷射聚光區域設定為矩形，可剌於邊緣包含直線部 j圖案之修正，若能制光圈等來變更照射區域之尺 寸，可對應於複數尺寸之圖案修正而為所喜好者。 圖2係顯示本發明之光罩缺陷修正 係例示了圖1之遮光部與透光 =之圖案的情況。具體而言，_示了於本發明之必項 附近之圖案之修正製程，該圖案所具有之迻 修正裝置以1次性修正操作= 之最寸(亦即1次性修正操作所崎 線上述光罩所具備之®案係具有： 寬度錄卩1讲打與小 。，父互排列而成；以及遮光部ls，在 24 201232164 該圖案區域之圖案排列方向上鄰接於上述透光部1T而 具有大寬度。 圖2(A)係顯示於上述圖案區域當中在小寬度之透 光部1Τ產生剩餘缺陷11、而鄰接於此透光部ιτ之具 有大寬度之遮光部1S之圖案之修正製程。 ' ^首先，將圖2(A)(a)所示之包含於前述小寬度之透 光部ιτ所產生之前述剩餘缺陷u以及和產生該剩餘缺 陷11之透光部1T相鄰接於之前述大寬度之遮光部1S 之一部分的區域加以同時去除(參見圖2(A)(b))。此時， 將去除之形狀設定為矩形狀膜去除部7 -邊和遮細在透光部Π·側的邊緣 佳。 * /、次，形成包含於前製程中去除了大寬度之 is之區域的修正膜8(參見圖2(A)(c))。亦即，對去除^ 遮光膜之前述料部當中之至少去除了遮光膜之區域 進行膜形成。此時，將形祕正膜8之錄 狀’使得此矩雜之-邊和㈣部ls錢光部^側的 邊緣位置相-致為佳。由於遮光部ls具有較ι次性修 正操作所能形成之最小加工尺寸來得大寬度，故可丄 超出遮光部1S之前提下形成上歸正膜;。藉此，於 ^ 小寬度之透光部1Τ所產生之剩餘缺陷 U可被南精度修正。 此外，圖2⑻侧稀錢度之料部2S產生缺 漏缺陷10之圖案之修正製程。 、 25 201232164 首先，於包含圖2(B)(a)所示之於前述小寬度之遮 光部2S所產生之前述缺漏缺陷10以及鄰接於遮光部 2S之小寬度之透光部1T之一部分的區域形成修正膜 6(參見圖2(B)(b；))。此圖2(B)(b)之狀態僅在於小寬度之 透光部1T所產生之剩餘缺掐之形狀、大小有別，實質 上和上述圖2(A)(a)為同樣狀態。從而’後續之修正二 以從圖2(A)(a)起之修正作業以同樣方法來修正。換言 之’圖2(A)(a)所示之修正方法可單獨實施，此外，亦 可做為一連串修正作業之最後製程來實施。 亦即，將包含圖2(B)(b)所示之於前述小寬度之透 光部1T所形成之修正膜6所致剩餘缺陷以及和^生該 剩餘缺陷之透光部1T鄰接之前述大寬度之遮光部^ 之一部分的區域加以同時去除(參見圖2(B)(c))。 其次，形成包含有前製程中去除了大寬度之遮光部 1S之區域的修正膜8(參見圖2(B)(d))。由於遮光部is 具有較1次性修正操作所能形成之最小加工尺寸來得 大寬度，故可在不致超過遮光部ls之前提下形成上述 修正膜8。藉此’目2(B)(a)所示之小寬度之遮光部2S 所產生之缺漏缺陷1〇可被高精度修正。 此外，圖2(C)係顯示於小寬度之透光部2T產生剩 餘缺陷11之圖案之修正製程。 首先，將包含目2(C)(a)所示之於小寬度之透光部 2T所產生之前述剩餘缺陷u以及和產生了該剩餘缺陷 11之透光部2T鄰接之小寬度之遮光部2s之—部分的 26 201232164 區域加以同時去除(參見圖2(c)(b))。此時，將去除之形 狀設定為矩形狀膜去除部5，使得此矩形狀之一邊和前 述遮光部3S在透光部2T_邊緣位置相一致為佳。圖 2(c)(b)係顯示如此般去除了剩餘缺陷η等之後之狀 態，此狀態僅在於小寬度之遮转2S所產生之缺漏缺 陷=形狀、大小有別，實質上和上述圖2(B)⑷為同樣 狀恶。從而，後續之修正能以和自圖2(則(幻開始之修 正作業以同樣方法來修正。 亦即’於包含圖2(c)(b)所示之前述小寬度之遮光 部2S之因去除遮光膜所產生之缺漏缺陷以及鄰接於遮 光部2S之小寬度之透光部1T之一部分的區域形成修正 膜6(參見圖2(C)(c))。 其次，將包含於前述小寬度之透光部〗丁所形成之 修正膜6所致剩餘缺陷以及和產生了該剩餘缺陷之透 光部it鄰接之前述大寬度之遮光部18之一部分的區域 加以同時去除（參見圖2(C)(d))。 其次’开> 成包含剛製程中去除了大寬度之遮光部 1S之區域的修正膜8(參見圖2(C)(d))。由於遮光部is 具有較1次性修正操作所能形成之最小加工尺寸來得 大寬度，故可在不致超過遮光部1S之前提下形成上述 修正膜8。藉此，於圖2(C)⑷所示之小寬度之透光部 2T所產生之剩餘缺陷11可被高精度修正。 〔第2實施形態〕 本發明不僅可針對上述第1實施形態所說明之單S 23 201232164 The internal stress causes the occurrence of flaking or cracking, and it is particularly suitable for the film thickness of the film to be 〇1μηη to 丨〇/m. On the other hand, as a laser light source for removing a light-shielding portion or a light-shielding film or a correction film by using a laser, a YAG laser or a semiconductor laser can be used. In addition, in order to remove the light-shielding portion or the light-transmitting portion: the light-shielding film and the correction film are preferably used for a pulse-oscillation type laser which can oscillate a high-intensity laser in a short time. In this case, a laser can be selected. The read length, the intensity can be used to cover, correct the film heat,: to melt, New Ml, in addition to the laser used in the removal of the red film, and the laser CVD, by The laser concentrating area is set to a rectangular shape, and the edge includes the correction of the pattern of the straight line portion j. If the size of the irradiation area can be changed by the aperture or the like, the pattern can be corrected corresponding to the pattern of the plurality of sizes. Fig. 2 is a view showing a state in which the mask defect correction system of the present invention exemplifies the pattern of the light-shielding portion and the light-transmitting pattern of Fig. 1. Specifically, the correction process of the pattern near the necessity of the present invention is shown, and the shift correction device of the pattern has the one-time correction operation = the most inch (that is, the light of the one-time correction operation The cover system of the cover has: a width recording 1 and a small. The parent is arranged in a row; and a light blocking portion ls having a pattern arrangement direction adjacent to the light transmitting portion 1T in 24 201232164 Fig. 2(A) shows a correction process for patterning the light-shielding portion 1S having a large width adjacent to the light-transmitting portion ιτ in the light-transmitting portion 1 of the small width in the pattern region. ' ^ First, the aforementioned remaining defect u generated by the light-transmitting portion ιτ included in the small-width portion shown in FIG. 2(A)(a) and the light-transmitting portion 1T which generates the remaining defect 11 are adjacent to each other The region of a part of the large-width light-shielding portion 1S is simultaneously removed (see Fig. 2(A)(b)). At this time, the removed shape is set to a rectangular film-removing portion 7-side and a thin portion in the light-transmitting portion. Π·The edge of the side is good. * /, times, the formation is included in the previous process to remove The correction film 8 of the region of the is of a large width (see Fig. 2(A)(c)), that is, the film formation is performed on at least the region where the light-shielding film is removed from the above-mentioned portions of the light-shielding film. It is preferable to make the shape of the shape of the positive film 8 such that the edge of the side is the same as that of the side of the (4) part of the light portion. Since the light shielding portion ls has a higher correction operation, it can be formed. Since the minimum processing size has a large width, the upper normalized film can be lifted before the light shielding portion 1S is removed; thereby, the remaining defect U generated by the light transmitting portion 1 of the small width can be corrected by the south precision. The correction process of the pattern of the missing defect 10 is generated in the material portion 2S of the side of the lean portion of Fig. 2 (8). 25 201232164 First, the foregoing is produced by the light-shielding portion 2S having the small width shown in Fig. 2(B)(a). The missing defect 10 and the region adjacent to a portion of the light-transmitting portion 1T having a small width of the light-shielding portion 2S form the correction film 6 (see Fig. 2(B)(b;)). The state of this FIG. 2(B)(b) is only The shape and size of the remaining defects generated by the light-transmitting portion 1T having a small width are substantially the same as those of the above-described FIG. 2(A)(a). Therefore, the subsequent corrections are corrected in the same way by the correction operation from Fig. 2(A)(a). In other words, the correction method shown in Fig. 2(A)(a) can be implemented separately, or It is implemented as a final process of a series of correction operations. That is, the remaining defects and the resulting defects of the correction film 6 formed by the light-transmitting portion 1T shown in the above-mentioned small width shown in FIG. 2(B)(b) will be included. The region of the light-receiving portion 1T of the remaining defect adjacent to a part of the large-width light-shielding portion is simultaneously removed (see FIG. 2(B)(c)). Next, the formation includes a blackout having a large width removed in the front process. The correction film 8 of the region of the portion 1S (see Fig. 2(B)(d)). Since the light shielding portion is has a large width which can be formed by the minimum processing size which can be formed by the one-time correcting operation, the above-described correction film 8 can be formed without exceeding the light shielding portion ls. The missing defect 1〇 generated by the small-width light-shielding portion 2S shown by the object 2 (B) (a) can be corrected with high precision. Further, Fig. 2(C) shows a correction process for generating a pattern of the remaining defects 11 in the light-transmitting portion 2T having a small width. First, the remaining defect u generated by the light-transmitting portion 2T having a small width as shown in the item 2 (C) (a) and the light-shielding portion having a small width adjacent to the light-transmitting portion 2T where the remaining defect 11 is generated are included. The 2s part of the 26 201232164 area is removed simultaneously (see Figure 2(c)(b)). At this time, the shape to be removed is set to the rectangular film removing portion 5, so that one of the rectangular shape and the light shielding portion 3S are preferably aligned at the edge position of the light transmitting portion 2T_. Fig. 2(c)(b) shows the state after the residual defect η and the like are removed in this way, and the state is only the missing defect caused by the small width of the blocking 2S = the shape and the size are different, substantially the same as Fig. 2 above. (B) (4) is the same as evil. Therefore, the subsequent correction can be corrected from the same method as in FIG. 2 (the correction process of the magic start is performed in the same way. That is, the cause of the small-width light-shielding portion 2S shown in FIG. 2(c)(b) is included. The correction film 6 is formed by removing a defect caused by the light-shielding film and a portion of the light-transmitting portion 1T which is adjacent to the light-shielding portion 2S (see FIG. 2(C)(c)). Next, it will be included in the aforementioned small width. The remaining defects caused by the correction film 6 formed by the light-transmitting portion and the portion of the large-width light-shielding portion 18 adjacent to the light-transmitting portion which generates the remaining defect are simultaneously removed (see FIG. 2 (C). (d)). Next, 'on' is a correction film 8 including a region in which the large-width light-shielding portion 1S is removed in the process (see Fig. 2(C)(d)). Since the light-shielding portion is one time The minimum processing size that can be formed by the correction operation has a large width, so that the correction film 8 can be formed without exceeding the light shielding portion 1S. Thereby, the light transmission portion having a small width as shown in FIG. 2(C)(4) The remaining defect 11 generated by 2T can be corrected with high precision. [Second Embodiment] The present invention can be used not only for the needle The single item described in the first embodiment

27 S 201232164 獨$在於透光部或是遮光部的缺陷進行修正，也可對橫 跨複數透光部或是遮光部㈣生之大缺陷進行修正。/、 圖3係顯示圖3(a)所示之，在具有線-間距之圖案區 域（由小寬度之透光部2T，3T與小寬度之 1S，2S，3S所交互排列而成）與大寬度之透光部ηχ在該 圖案區域之圖案排列方向上鄰接於上述遮光部⑼之圖 案中例如橫跨3部位之透光部1T,2T，3T而形成之剩餘 缺陷12的修正製程。 首先，將包含上述剩餘缺陷12當中從上述大寬度 之透光部1Τ触互依序數算呈交互排列之小寬度之^ 光部與透光料會成為最大數之縣部3Τ所形成之剩 餘缺陷以及鄰接於此透光部3Τ之遮光部28之一部分的 區域利用矩形狀膜去除部2G來加以同時去除(參見圖3 (b))。其次，於包含上述製程中去除了遮光膜之一部分 的遮光》卩2S之缺漏部分的區域形成矩形狀修正膜 21(參見圖3(c))。其次，將於包含上述遮光部2s與鄰接 透光部2T所形成之修正膜21(所致剩餘缺陷）的^域藉 由矩形狀膜去除部22來去除(參見圖3(d))。 曰 、，其次’於包含上述製程中去除了遮光膜之一部分之 遮光部1S之缺漏替的區卿成矩形狀修正膜23(參 見圖3(e))。紐於最後將包含於上述遮光部與鄰^ 透光部it所形成之修正膜23(所致剩餘缺陷）的區域鲜 由，形狀膜去除部24來去除(參見圖3(f))。由於上述‘ 光部1T具有較i次性修正操作所能去除之最小加工尺 28 201232164 寸來付大寬度，所以不會發生將鄰接遮光部之區域予以 去除之不佳情況。此外，上述矩形狀膜去除部2〇、22、 Μ以及矩形狀修正膜21、23皆以使得矩形狀之一邊和 鄰接透光部或是遮光部之邊緣位置相一致為佳。 藉此，圖3(a)所示之橫跨複數小寬度之透光部所產 生之剩餘缺陷12可被高精度修正。 圖4係例示圖3之遮光部與透光部呈反轉圖案之情 況0 亦即圖4係顯示圖4(a)所示，於具有線_間距之圖 案區域=小寬度之透光部1T，2T，3T與小寬度之遮光部 2S，3S所父互排列而成)與大寬度之遮光部a(在該圖案 區域之圖案排列方向上鄰接於上述透光部⑺之圖案 :’例如横跨3部位之遮光冑1S，2S，3S所形成之缺漏缺 陷13之修正製程。 首先，於包含上述缺漏缺陷13當中從上述大寬产 =遮光部1SS交互依序數算呈交互排列之小寬度之遮 光部與透光部時會成為最大數之遮光部3S所形成之缺 漏缺陷以及鄰接於此遮光部3S之透光部2丁之一部分的 ，域來形成矩形狀修正膜25(參見圖4(b))。其次，將包 含上述製程中於上述遮光部3S與鄰接透光部2T所形成 之L正膜25(所致剩餘缺陷）的區域以矩形狀膜去除部 %來去除(參見圖4(c))。其次，於包含上述製程中去除 了遮光膜之-部分的遮光部2S之缺漏部分的區域形成 矩形狀修正膜27(參見圖4(d))。27 S 201232164 The defect of the light-transmitting part or the light-shielding part is corrected, and the large defects of the cross-transparent light-transmitting part or the light-shielding part (4) can also be corrected. /, Fig. 3 shows the pattern area with line-to-space shown in Fig. 3(a) (interacted by the small width of the light transmitting portions 2T, 3T and the small width of 1S, 2S, 3S) The large-width light transmitting portion η is adjacent to the pattern of the light-shielding portion (9) in the pattern arrangement direction of the pattern region, for example, a correction process of the remaining defects 12 formed by the light-transmitting portions 1T, 2T, and 3T across the three portions. First, among the remaining defects 12, the light-emitting portion and the light-transmitting material having a small width which are alternately arranged from the large-width light-transmitting portion 1 are alternately formed into the remaining defects of the county portion. And a region adjacent to a portion of the light shielding portion 28 of the light transmitting portion 3 is simultaneously removed by the rectangular film removing portion 2G (see FIG. 3(b)). Next, a rectangular correction film 21 is formed in a region including the missing portion of the light-shielding 卩2S in which one portion of the light-shielding film is removed in the above-described process (see Fig. 3(c)). Then, the correction film 21 (the remaining defect) formed by the light shielding portion 2s and the adjacent light transmission portion 2T is removed by the rectangular film removal portion 22 (see Fig. 3(d)). Then, the area of the light-shielding portion 1S in which one of the light-shielding films is removed in the above-described process is replaced by a rectangular correction film 23 (see Fig. 3(e)). Finally, the region including the correction film 23 (residual defect caused by the light-shielding portion and the adjacent light-transmitting portion it) is fresh, and the shape film removal portion 24 is removed (see Fig. 3(f)). Since the above-mentioned "light portion 1T" has a minimum processing scale 28 201232164 inches which can be removed by the i-time correcting operation, the width of the adjacent light-shielding portion is not removed. Further, it is preferable that the rectangular film removing portions 2, 22, Μ and the rectangular correction films 21, 23 are such that one side of the rectangular shape coincides with the edge position of the adjacent light transmitting portion or the light shielding portion. Thereby, the remaining defects 12 generated by the light transmitting portions spanning a plurality of small widths as shown in Fig. 3(a) can be corrected with high precision. 4 is a view showing a case where the light-shielding portion and the light-transmitting portion of FIG. 3 are reversed. FIG. 4 is a view showing a light-emitting portion 1T having a line-pitch pattern area and a small width as shown in FIG. 4(a). 2T, 3T and the small-width light-shielding portions 2S, 3S are arranged in a mutual arrangement) and a large-width light-shielding portion a (a pattern adjacent to the light-transmitting portion (7) in the pattern arrangement direction of the pattern region: 'for example, horizontal The correction process of the missing defect 13 formed by the light-shielding 胄 1S, 2S, 3S across the three parts. First, among the above-mentioned missing defects 13 , the large width = the light-shielding part 1SS is alternately counted and arranged in a small width. When the light-shielding portion and the light-transmitting portion are the largest defects of the light-shielding portion 3S and a portion adjacent to the light-transmitting portion 2 of the light-shielding portion 3S, a rectangular correction film 25 is formed (see FIG. 4 (see FIG. 4). b)). Next, the region including the L-positive film 25 (the remaining defect) formed in the light-shielding portion 3S and the adjacent light-transmitting portion 2T in the above-described process is removed by the rectangular film removing portion % (see FIG. 4). (c)). Secondly, the light-shielding portion 2 of the portion in which the light-shielding film is removed in the above process is included A region of the missing portion of S forms a rectangular correction film 27 (see Fig. 4(d)).

S 29 201232164 其次，將包含於上述遮光部2S與鄰接透光部it 所形成之修正膜27(所致剩餘缺陷）的區域以矩形狀膜 去除部28來去除(參見圖4(e))。最後，於包含利用上述 膜去除部28來去除了遮光膜之一部分的遮光部1S之缺 漏部分的區域形成矩形狀修正膜29(參見圖4(〇)。由於 上述遮光部1S具有較1次性修正操作所能形成之最小 加工尺寸來付大寬度，故可在不致超過鄰接透光部1T 之區域的如乂下形成修正膜29。此外，上述矩形狀膜 去除部26、28以及矩形狀修正膜25、27、29皆以使得 矩形狀之一邊對位於鄰接透光部或是遮光部之邊緣位 置來一致化為佳。藉此，圖4(&)所示之跨越複數小寬度 之遮光部所產生之缺漏缺陷13可被高精度修正。又 〔第3實施形態〕 本發明也可針對橫跨複數透光部或是遮光部而發 生之大缺陷、且於離開大寬度之透光部或是遮光部之^ 置所產生之缺陷進行修正。 圖5係顯示圖5(a)所示，於具有線_間距之圖案區域 (一由小寬度之透光部2Τ〜6Τ與小寬度之遮光部ls^所 交互排列而成）與大寬度之透光部1T(在該圖案區域之 圖案排列方向上鄰接於上述遮光部ls)之圖案中，如 橫跨2部位之透光部4T、5T所形成之剩餘缺陷w j 正製程。 首先’特定上述剩餘缺陷14當中從上述大办 透光部1T起交互依序數算呈交互排列之小寬度 201232164 具有缺陷且會成為最大數之透光部π， 5τ卿叙嶋軸錢鄰接於此 大寬度之透光部側的遮光部4 S之一部分的 形狀❹除部3〇來做一次去除（參見圖 5(b))。其:人，特定上述製程中遮光膜之—部分已被 ，除之遮光部4S ’於包含此遮切4S之缺漏部分以及 祕於此遮光部4S之大寬度之透光部側的透光部4T 之區j形成矩形狀修正膜31(參見圖5(c))。其次，特定 已暫定形祕正狀透絲4了，將包含域絲叮所 形成之修正膜31(所致剩餘缺陷）以及鄰接於透光部4丁 之大寬度之透光部侧之遮光部3S的區域以矩形狀膜去 除部32來去除(參見圖5(d))。 其次，特定於上述製程中已暫定去除遮光膜之一部 分的遮光部3S，於包含遮光部3S之缺漏部分以及鄰接 於遮光部3S之大寬度之透光部側之透光部奵的區域形 成矩形狀修正膜33(參見圖5(e))。其次特定暫時形成有 修正膜之透光部3T’將包含於透光部3T所形成之修正 膜33(所致剩餘缺陷）與鄰接於透光部3τ之大寬度之透 光部側之遮光部2S的區域以矩形狀膜去除部34來去除 (參見圖5(f))。 示 其次’特定上述製程中遮光膜之一部分已暫定去除 之遮光部2S，於包含遮光部2S之缺漏部分以及鄰接於 遮光部2S之大寬度之透光部側之透光部2T的區域形成 矩形狀修正膜35(參見圖5(g))。其次，特定暫時形成有S 29 201232164 Next, the region including the light-shielding portion 2S and the correction film 27 (residual residual defect) formed by the adjacent light-transmitting portion it is removed by the rectangular film removing portion 28 (see Fig. 4(e)). Finally, a rectangular correction film 29 is formed in a region including the missing portion of the light shielding portion 1S in which one portion of the light shielding film is removed by the film removal portion 28 (see FIG. 4 (〇). Since the light shielding portion 1S has a one-time correction Since the minimum processing size that can be formed by the operation is made to have a large width, the correction film 29 can be formed without being over the region adjacent to the light transmitting portion 1T. Further, the rectangular film removing portions 26 and 28 and the rectangular correction film are formed. 25, 27, 29 are preferably made such that one side of the rectangular shape is located adjacent to the edge of the light transmitting portion or the light shielding portion. Thereby, the light shielding portion spanning a plurality of small widths as shown in FIG. 4 (&) The resulting missing defect 13 can be corrected with high precision. [Third Embodiment] The present invention can also be used for large defects that occur across a plurality of light-transmitting portions or light-shielding portions, and that are separated from a large-width light-transmitting portion or It is corrected by the defect generated by the light-shielding portion. Fig. 5 shows the pattern area having the line_pitch shown in Fig. 5(a) (a light-transmitting portion of a small width of 2Τ6Τ and a small width) Part ls^ are arranged by interaction) In the pattern of the light-transmissive portion 1T having a large width (adjacent to the light-shielding portion ls in the pattern arrangement direction of the pattern region), the remaining defects wj formed by the light-transmitting portions 4T and 5T across the two portions are positively processed. In the specific remaining defect 14 described above, the small width 201232164 which is interactively arranged from the above-mentioned large light-transmitting portion 1T has a defect and will become the largest number of light-transmitting portions π, and the 5τ 嶋 嶋 axis is adjacent to this large The shape of one portion of the light-shielding portion 4 S on the side of the light-transmitting portion of the width is removed by a portion 3 (see FIG. 5(b)). It is: a person, in particular, a portion of the light-shielding film in the above process has been removed. The light-shielding portion 4S' forms a rectangular correction film 31 in a region j including the missing portion of the masking portion 4S and the light-transmitting portion 4T on the side of the light-transmitting portion having a large width of the light-shielding portion 4S (see FIG. 5(c) Secondly, the specific shape has been tentatively shaped, and the correction film 31 (the remaining defect) formed by the field filament is included, and the light-transmitting portion side adjacent to the large width of the light-transmitting portion 4 is The area of the light shielding portion 3S is removed by the rectangular film removing portion 32 (see Fig. 5(d)). The light-shielding portion 3S which is tentatively removed from a portion of the light-shielding film in the above-described process is formed in a rectangular shape in a region including the missing portion of the light-shielding portion 3S and the light-transmitting portion 邻接 adjacent to the light-transmitting portion side of the large width of the light-shielding portion 3S. Correction film 33 (see Fig. 5(e)). Secondly, the light-transmitting portion 3T' in which the correction film is temporarily formed is included in the correction film 33 (resulting in residual defects) formed in the light-transmitting portion 3T and adjacent to the light-transmitting portion. The area of the light-shielding portion 2S on the side of the light-transmitting portion having a large width of 3τ is removed by the rectangular film removing portion 34 (see FIG. 5(f)). Next, the light-shielding portion in which one of the light-shielding films has been tentatively removed in the above-described process is specified. 2S, a rectangular correction film 35 is formed in a region including the missing portion of the light shielding portion 2S and the light transmitting portion 2T on the side of the light transmitting portion having a large width of the light shielding portion 2S (see FIG. 5(g)). Second, the specific temporary formation

31 S 201232164 修正膜之透光部2T，將包含於透光部2T卿成之修正 膜35(所致剩餘缺陷）以及鄰接於透光部之大寬产之 透光部側之遮光部1S的區域以矩形狀膜去除部％ ^ 除(參見圖5(h))。 其次，特定上述製程中遮光膜之一部分已暫定去除 之遮光部1S ’於包含遮光部ls之缺漏部分的區域以及 大寬度之透光部1T形成矩形狀修正膜37(參見圖 5(i))。最後，將包含於上述遮光部ls與鄰接透光部叮 所暫時形成之修正膜37(所致剩餘缺陷）的區域以矩形 狀膜去除部38來去除(參見圖5(〇)。由於上述透光部^ 具有較1次性修正操作所能去除之最小加工尺寸來得 大寬度，故於去除上述修正膜37之際，不會發生去除 鄰接遮光部1S之區域的不佳情形。此外，上述矩形狀 膜去除部30、32、34、36、38以及矩形狀修正膜、 33、35、37皆以使得矩形狀之一邊對位於鄰接透光部 或是遮光部之邊緣位置而一致為佳。 藉此，圖5(a)所示之橫跨複數小寬度之透光部所產 生之剩餘缺陷14可被高精度修正。 圖6係例示圖5之遮光部與透光部呈反轉圖案之 況。 ”月 亦即圖6係圖6(a)所示，於具有線_間距之圖案區 域（由小寬度之透光部1Τ〜6Τ與小寬度之遮光部2S〜6S 所交互排列而成）與大寬度之遮光部1S(在該圖案區域 之圖案排列方向上鄰接於上述透光部1T)之圖案中，例 32 201232164 如橫跨2部位之遮光部4S、5S所形成之缺漏缺陷15 之修正製程。 首先’特定上述缺漏缺陷15當中從上述大寬度之 ，光部1S起交互依序數算呈交互排列之小寬度之遮光 部與透光部時具有缺陷且會成為最大數之遮光部5S， 於包含此遮光部5S所形成之缺漏缺陷以及鄰接於此遮 光部5S之大寬度之遮光部側之透光部41>之一部分的區 域形成矩形狀修正膜4〇(參見圖6(b))。其次，特定於上 述製程中暫時形成有修正膜4〇之透光部4T，將包含於 此透光部4Τ所形成之修正膜4〇(所致剩餘缺陷）以及鄰 接於此透光部4Τ之大寬度之遮光部側之遮光部4S的區 ，以矩形狀膜去除部41來去除(參見圖6(c))。其次，特 疋於上述製程中已暫定去除遮光膜之一部分之遮光部 4S，於包含此遮光部4S之缺漏部分以及鄰接於 部4S之大寬度之遮光部側之透光部灯的形矩 狀修正膜42(參見圖6(d))。 其次，特定於上述製程中暫時形成有修正膜42之 透光部3T’將包含於此透光部3T所形成之修正膜42(所 致剩餘缺陷及鄰接於此透光部3Τ之大寬度之遮光部 側之遮光部3S的區域以矩形狀膜去除部43來去除(參 見圖6(e))。其次，特定於上述製程中已暫定去除遮光 膜之一部分之遮光部3S，於包含遮光部3S之缺漏部分 此遮光部3S之大寬度之遮光侧之透光部 、品戍形成矩形狀修正膜44(參見圖6(f))。 33 201232164 其次，特定於上述製程中暫時形成有修正膜44之 透光部2T，將包含於此透光部2T所形成之修正膜44(所 致剩餘缺陷）以及鄰接於此透光部2Τ之大寬度之遮光部 側之遮光部2S的區域以矩形狀膜去除部45來去除(參 見圖6(g))。其次’特定於上述製程中已暫定去除遮光 膜之-部分之遮光部2S，於包含此遮光部2S之缺漏部 分以及鄰接於遮光部2S之大寬度之遮光部側之透光部 1T的區域形成矩形狀修正膜46(參見圖6(h))。 其次，特定暫時形成有修正膜46之透光部1T，將 包含於此透光部1Τ所形成之修正膜46(所致剩餘缺陷） 以及大寬度之遮光部1S的區域以矩形狀膜去除部47來 去除（參見圖6⑴）。最後，於已利用上述膜去除部47來 暫定去除遮光膜之-部分之遮光部18之缺漏部分的區 域形成矩形狀修正膜48(參見圖6(]·))。由於上述遮光部 1S具有較1次性修正操作所能形成之最小加工尺寸來 得大寬度，故可在不超過鄰接之透光部1Τ之區域的前 提下形成修正膜48。此外，上述矩形狀膜去除部41、 43、45、47以及矩形狀修正膜4〇、42、44、的、48皆 :使得矩形狀之一邊對位於鄰接透光部或是遮光部： 邊緣位置來一致為佳。 藉此，@ 6(a)所示之橫跨複數小寬度之遮光部所產 生之缺漏缺陷15可被高精度修正。 修n t第1、第2、第3實施形態所示，本發明之缺陷 "方法中，係使得矩形狀膜去除部之一邊能和與打算 34 201232164 去除膜之透光部鄰接之遮光部之邊緣一致，或是使得矩 形狀修正膜之一邊能和與打算形成膜之遮光部鄰接之 透光部之邊緣一致，藉此可利用具有矩形狀一邊之直線 精度來進行高精度修正。此尤其在將修正製程中於透光 邛所开>成之修正膜加以去除修正之際、或是對修正製程 中已去除了遮光部之一部分的部分形成修正膜之際為 適宜者。再者除了上述以外，亦可適用於透光部所產生 之剩餘缺陷和遮光部呈連續之情況下去_餘缺陷之 際。此外，適合於當在遮光部所產生之缺漏缺陷係和透 光部呈連續之情況下於缺漏缺陷部分形成修正膜之 際。此外，可適合於在圖案邊緣包含直線部分之、 距圖案之缺陷修正方法。該等樣態若例如_去除之二 第1貫把形態係圖1(A)(C)之透光部丨丁與遮光部π 交界’同樣地示於圖1(B)(d)、圖1(〇⑷'、圖心S之 圖 2(B)(c)、圖 2(C)(b)、圖 2(C)(d)等。此外 U、 實施形態則為圖3(b)之遮光部38與透光部3丁 1弟2 同樣地例示圖3(d)、圖3(f)等。此外，若為之^父界， 態，則為圖5之(b)之遮光部5S盥透光邙5丁貫施形 同樣地對應到圖5⑷、圖5⑺、圖5(h)1之，界’ 外，形成修正膜之情況之例係圖1(A)(b)t 等。此 遮光部1S之交界，同樣地示於 =2T與 圖 I(c)(d)等。 、八）圖 i(c)(b)、 依據本發明之缺陷修正方法’當為 缺陷修正裝置之丨次性修正操作龍 雷射 τ 小膜去 201232164 除寬度來得大寬度之透光部的第！遮光部來修正較以 雷射缺f多正裝置之1次性修正操作所能形成之最小 膜形成寬度來得小的遮光部之缺驗陷之情況 ，於前述 修正作業所形成之修正臈必須在前述大寬度之透光部 連同缺漏缺陷部分攸形雜正膜後，將賴於前述大 寬度之透光部之修正膜加以去除^從而，此情況下在第 1遮光部獅成之修正膜在和前述大寬度之透光部之交 界會具有因去除修正膜而形成之雷射轉台㈣P㈣所 致邊緣(例示於圖1⑷⑷之遮光部1S與透光部1T之交 界，同樣地於圖3(f)、圖5(j)等）。 此外’例如依據® 5在對於較以雷射缺陷修正裝置 二1次J生修正操作所能形成之最小膜形成寬度來得小 遮光部之缺漏缺陷進行修正後，必定此遮光部在 有較以雷射缺陷修正裝置之i次性修正操作所能去 :3=除寬度來得大寬度之透光部之侧的邊緣 ::由去除修正膜而形成。此樣態係 jMS^MT^^§5w^5(h)〇^ :/晉:二同樣的遮光部，在有較以雷射缺陷修 裝置之1 :人性修正操作所能去除之最伟 除=====並非藉二 ’:樣態為圖⑽之透光=所 生之此特徵在第1實施形31 S 201232164 The light-transmitting portion 2T of the correction film includes the correction film 35 (the remaining defect) formed in the light-transmitting portion 2T and the light-shielding portion 1S adjacent to the light-transmitting portion side of the large-width transmission portion of the light-transmitting portion. The area is divided by a rectangular film removal portion % ^ (see Fig. 5(h)). Then, the light-shielding portion 1S' in which a portion of the light-shielding film has been temporarily removed in the above-described process is formed in a region including the missing portion of the light-shielding portion ls and the light-transmitting portion 1T having a large width forms a rectangular correction film 37 (see FIG. 5(i)). . Finally, the region including the light-shielding portion ls and the correction film 37 (the remaining defect) temporarily formed by the adjacent light-transmitting portion 以 is removed by the rectangular film removing portion 38 (see FIG. 5 (〇). The light portion has a large width which can be removed by the minimum processing size which can be removed by the primary correction operation, so that when the correction film 37 is removed, the problem of removing the region adjacent to the light shielding portion 1S does not occur. The film removing portions 30, 32, 34, 36, 38 and the rectangular correction film, 33, 35, 37 are preferably such that one of the rectangular sides is positioned adjacent to the edge of the light transmitting portion or the light blocking portion. Therefore, the remaining defects 14 generated by the light transmissive portion across the plurality of small widths shown in FIG. 5(a) can be corrected with high precision. FIG. 6 is a view showing the reverse pattern of the light shielding portion and the light transmitting portion of FIG. Fig. 6 is a pattern area having a line-spacing as shown in Fig. 6 (a). (The light-transmitting portions 1Τ6Τ of a small width and the light-shielding portions 2S~6S of a small width are alternately arranged) The light-shielding portion 1S having a large width (adjacent to the pattern arrangement direction of the pattern region) In the pattern of the light transmitting portion 1T), the example 32 201232164 is a correction process for the missing defect 15 formed by the light shielding portions 4S and 5S across the two portions. First, the light leakage portion 15 is specified from the above-mentioned large width portion. 1S is a light-shielding portion 5S having a small width of the light-shielding portion and the light-transmitting portion which are alternately arranged in an alternating manner, and which has a maximum number of light-shielding portions 5S, and includes a missing defect formed by the light-shielding portion 5S and adjacent to the light-shielding portion 5S A portion of the light-transmitting portion 41 of the large-width light-shielding portion side is formed into a rectangular correction film 4 (see Fig. 6 (b)). Secondly, it is specified to be transparently formed with the correction film 4 in the above process. The portion 4T includes a correction film 4A (residual defect) formed by the light-transmitting portion 4A and a region of the light-shielding portion 4S on the side of the light-shielding portion adjacent to the large width of the light-transmitting portion 4, in a rectangular film. The removal portion 41 is removed (see FIG. 6(c)). Secondly, the light-shielding portion 4S of a portion of the light-shielding film is tentatively removed in the above process, and the missing portion including the light-shielding portion 4S and the adjacent portion 4S are large. Transmissive portion on the side of the shading portion of the width The rectangular correction film 42 (see Fig. 6(d)). Next, the light transmitting portion 3T' which is formed with the correction film 42 temporarily formed in the above process will include the correction film 42 formed by the light transmitting portion 3T ( The area of the light-shielding portion 3S on the side of the light-shielding portion adjacent to the large-width portion of the light-transmitting portion 3A is removed by the rectangular film removing portion 43 (see FIG. 6(e)). Second, it is specified in the above process. The light-shielding portion 3S of a portion of the light-shielding film is tentatively removed, and the light-receiving portion of the light-shielding side of the large-width portion of the light-shielding portion 3S is formed in the missing portion of the light-shielding portion 3S, and the rectangular correction film 44 is formed (see FIG. 6(f) 33 201232164 Next, the light-transmitting portion 2T in which the correction film 44 is temporarily formed in the above-described process is included, and the correction film 44 (the remaining defect) formed in the light-transmitting portion 2T is included and adjacent to the light-transmitting portion. The area of the light shielding portion 2S on the side of the light shielding portion having a large width of 2 inches is removed by the rectangular film removing portion 45 (see Fig. 6(g)). Then, the light-shielding portion 2S which is a portion which is tentatively removed from the light-shielding film in the above-described process is formed in a region including the missing portion of the light-shielding portion 2S and the light-transmitting portion 1T adjacent to the light-shielding portion side of the large width of the light-shielding portion 2S. A rectangular correction film 46 (see Fig. 6(h)). Next, the light-transmitting portion 1T in which the correction film 46 is temporarily formed is specifically formed, and the correction film 46 (the remaining defect) formed in the light-transmitting portion 1A and the region of the light-shielding portion 1S having the large width are defined as a rectangular film-removing portion. 47 to remove (see Figure 6 (1)). Finally, a rectangular correction film 48 is formed in a region where the missing portion of the light shielding portion 18 of the portion of the light shielding film has been tentatively removed by the film removing portion 47 (see Fig. 6 (Fig. 6)). Since the light-shielding portion 1S has a large processing width which can be formed by the minimum processing size which can be formed by the primary correction operation, the correction film 48 can be formed without elevating the region of the adjacent light-transmitting portion 1A. Further, the rectangular film removing portions 41, 43, 45, 47 and the rectangular correction films 4, 42, 44, 48 are such that one side of the rectangular shape is located adjacent to the light transmitting portion or the light blocking portion: the edge position It is better to be consistent. Thereby, the missing defect 15 generated by the light-shielding portion across a plurality of small widths shown in @6(a) can be corrected with high precision. According to the first, second, and third embodiments of the present invention, in the method of the present invention, the side of the rectangular film removing portion can be made to be adjacent to the light shielding portion adjacent to the light transmitting portion of the film. The edges are uniform, or one side of the rectangular correction film can be aligned with the edge of the light-transmitting portion adjacent to the light-shielding portion where the film is to be formed, whereby the high-precision correction can be performed using the linear accuracy of the rectangular side. This is particularly suitable when the correction film is removed in the correction process, or when the correction film is formed in a part of the correction process in which the light-shielding portion has been removed. Further, in addition to the above, it is also applicable to the case where the remaining defects caused by the light transmitting portion and the light shielding portion are continuous. Further, it is suitable for forming a correction film in a defective portion of the defect when the leaky defect and the light-transmitting portion which are formed in the light-shielding portion are continuous. Further, it is suitable for a defect correction method of a pattern from which a straight line portion is included at the edge of the pattern. In the same manner, for example, the first embodiment of the first embodiment is shown in Fig. 1(B)(d) and Fig. 1(B)(d) and Fig. 1(A)(C). 1 (〇(4)', Figure 2 (B) (c) of Figure S, Figure 2 (C) (b), Figure 2 (C) (d), etc. U, the embodiment is Figure 3 (b) The light-shielding portion 38 is similar to the light-transmitting portion 3, and the third embodiment is shown in Fig. 3(d), Fig. 3(f), etc. Further, if it is the parental state, it is the shading of Fig. 5(b). The part 5S 盥 盥 丁 丁 丁 丁 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样 同样Etc. The boundary of the light-shielding portion 1S is similarly shown at = 2T and FIG. 1(c)(d), etc., (8) Figure i(c)(b), the defect correction method according to the present invention' is a defect correction The device's 修正 性 修正 龙 龙 龙 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 The light-shielding portion corrects the defect of the small light-shielding portion which is smaller than the minimum film formation width which can be formed by the one-time correcting operation of the laser-deficient multi-positive device, and the correction flaw formed in the correction operation must be After the light-transmissive portion having a large width and the defect-deficient portion, the correction film of the light-transmitting portion of the large width is removed, and in this case, the modified film of the first light-shielding portion is The boundary between the light-transmitting portion and the large-width light-transmitting portion may have an edge caused by the laser turntable (4) P (4) formed by removing the correction film (illustrated at the boundary between the light-shielding portion 1S and the light-transmitting portion 1T of FIG. 1 (4) (4), similarly to FIG. 3 (f) ), Figure 5 (j), etc.). In addition, it is necessary to correct the missing defect of the small light-shielding portion according to the minimum film formation width which can be formed by the second film J-correction operation of the laser defect correction device, for example, according to the ® 5 The i-time correcting operation of the shot defect correcting device can be performed: 3 = the edge of the side of the light transmitting portion having a large width except for the width: formed by removing the correction film. This state is jMS^MT^^§5w^5(h)〇^:/Jin: Two of the same shading parts, which can be removed by the laser correction device 1: Humanity correction operation =====Do not borrow the second ': the pattern is the light transmission of the figure (10) = the characteristic of the birth is in the first embodiment

36 201232164 悲、第2實施形態、第3實施形態之任一情況也產生。 較以雷射缺陷修正裝置之1次性修正操作所能形 成之最小膜形成寬度來得小寬度之遮光部以複數 1配置，且該等利用本發明之缺陷修正方法來修正之 時，前述經修正之遮光部當中之—的第2遮光部係鄰接 於，以雷射缺陷修正裝置之！姐修正操作所能去除 之最小膜去除寬度來得大寬度之透光部。進而，存在於 ，接近前述第1遮光部之位置的第2遮光部之修正膜與 前述第1遮光部之修正膜_距離係較以t射缺陷^ =置之1姐修正操作所能去除之最小臈去除寬度 來仔小。其理由舉圖yc)為例說明如下。 針對圖1(c)⑷所示之於小寬度之遮光部2s所產生 況，首先如圖i(c)(b)所示 以及和產生該缺漏缺陷10 遠光部2T之一都分的區域 之缺漏缺陷1 〇加以修π：夕，法、、口 . _36 201232164 The grief, the second embodiment, and the third embodiment are also generated. The light-shielding portion having a small width is disposed at a plurality 1 with a minimum film formation width which can be formed by the one-time correcting operation of the laser defect correction device, and the correction is performed when the defect correction method of the present invention is used for the correction. The second light-shielding portion of the light-shielding portion is adjacent to the laser defect correction device! The sister corrects the minimum film removal width that can be removed to obtain a large width of the light transmitting portion. Further, the correction film of the second light-shielding portion that is close to the first light-shielding portion and the correction film _ distance of the first light-shielding portion are removed by the correction operation of the t-defects The minimum 臈 removal width is small. The reason is shown in the figure yc) as follows. For the situation of the small-width light-shielding portion 2s shown in Fig. 1 (c) and (4), first, as shown in Fig. i (c) (b) and the region where the missing defect 10 is formed by one of the high beam portions 2T The defect is missing 1 〇 to repair π: eve, law, mouth. _

—…7” Τ3ζ· 开负月y 六^月ϋ述缺漏缺 陷10之遮光部2S之鉍1:2 Φ U A „>·从—...7” Τ3ζ· Open and negative month y Six months of narration, lack of leaks, 10 shades of shades 2S, 1:2 Φ U A „>·From

將形成於透光部lT 止膜。隶後，如圖 之修正膜加以去除It will be formed in the light-receiving portion 1T to stop the film. After being removed, the modified film is removed as shown in the figure.

S 37 201232164 而、、Ό束修正。如此般，本發明之缺陷修正方法，其特徵 在於.於產生了缺陷之遮光部（或是透光部）之修正之 ，對該缺陷係暫定修正和較以雷射缺陷修正裝置之1 -人性修正操作所能去除之最小膜去除寬度來得大寬度 之透光部側相鄰接部位之透光部（或是遮光部），於下: 製耘將經過暫定修正之部位視為缺陷，而依序反覆進行 修正。此顯示了當使得較以雷射缺陷修正裝置之1次性 修正操作所能去除之最小膜去除寬度來得大寬度之區 域的矩形狀之一邊和圖案之邊緣一致而進行修正之情 況下，逐漸被修正之部位係從開始修正缺陷之位置處A 例如線-間距圖案等情況相對於其具有直線部之邊緣二 垂直且較以雷射缺陷修正裝置之丨次性修正 去除之最小膜去除寬度來得大寬度之透光部之方向斤ς 漸形成。從而，以本發明之缺陷修正方法所修正過之部 位所形成之修正膜係於和圖案邊緣呈垂直之方向並 列，故相鄰之修正膜彼此間距離等同於在修正膜與修正 膜之間所存在之透光部之寬度(較以雷射缺陷修正裝置 之」次性修正操作所能去除之最小膜去除寬度“小 的寬度）。亦即，相鄰修正膜彼此間之距離可成為 雷射缺陷修絲置之！姐修正操作戦去除之最小 膜去除寬度來得小。例如，可使得基於修正膜之遮光部 ，成線寬為Ιμηι以下者、或是基於修正膜之遮光 者Ιμιη以下的間距來形成和其他遮光部相鄰之轉印用 圖案。S 37 201232164 And, the end of the correction. In this way, the defect correction method of the present invention is characterized in that, in the correction of the light-shielding portion (or the light-transmitting portion) in which the defect is generated, the defect is tentatively corrected and the laser defect correction device is one-human. Correcting the minimum film removal width that can be removed by the operation to obtain the light-transmitting portion (or the light-shielding portion) of the adjacent portion of the light-transmitting portion on the large width, and the following: the defective portion is regarded as a defect, and The order is repeated. This shows that when one of the rectangular sides of the region having a large width which is removed by the minimum film removal width which can be removed by the one-time correcting operation of the laser defect correction device is corrected in accordance with the edge of the pattern, it is gradually corrected. The corrected portion is from the position where the defect is corrected at the beginning, for example, the line-pitch pattern or the like is larger than the edge having the straight portion of the straight portion and being smaller than the minimum film removal width of the laser defect correcting device. The direction of the light-transmitting portion of the width is gradually formed. Therefore, the correction film formed by the portion corrected by the defect correction method of the present invention is juxtaposed in a direction perpendicular to the edge of the pattern, so that the distance between adjacent correction films is equal to between the correction film and the correction film. The width of the light transmissive portion (the smaller width than the minimum film removal width that can be removed by the sub-correction operation of the laser defect correction device), that is, the distance between adjacent correction films can be a laser The defect repairing wire is set to be smaller than the minimum film removal width removed by the sister correction operation. For example, the shading portion based on the correction film may have a line width of less than or equal to Ιμηι or a shading based on the correction film Ιμιη A transfer pattern adjacent to the other light shielding portions is formed.

38 201232164 本發明所使用之遮光膜係至少將曝光用光之一部 分予以遮光者，例如當透光部之光穿透率定為1〇〇%之 時可使得曝光用光衰減至1%以下。例如可使用光學濃 度為2以上之膜。或是具有3%到80%、較佳為具有 3%〜60%之穿透率的膜也包含於本發明之遮光膜。例 如，可將具有3%到20%程度之穿透率的膜當作本發明 之「遮光膜」來使用。本發明所說「同等之遮光性」音、 指「同等之穿透率」，所謂「同等」係以打算進行二^ 修正之遮光膜的穿透率為基準而其（將其視為1〇〇%之 時)差可在20%以内。更佳為差可在5%以内。此外，於 本發明中所謂「遮光部」意指透明基板上待形成上述「遮 光膜」之部分。從而，當遮光膜穿透部分曝光用光之情 況，「遮光部」亦可具有既定之穿透率。上述遮光膜以 含有鉻（Cr)之材料而言有例如氮化鉻（CrN)、氧化鉻 (CrO)、氮氧化鉻(CrON)、氟化鉻((：作)等。此外，以含 有鉬（Mo)等金屬與石夕（Si)之材料而言有例如、38 201232164 The light-shielding film used in the present invention is intended to shield at least one of the light for exposure, for example, when the light transmittance of the light-transmitting portion is set to 1% by weight, the exposure light can be attenuated to 1% or less. For example, a film having an optical density of 2 or more can be used. Or a film having a transmittance of 3% to 80%, preferably 3% to 60%, is also included in the light-shielding film of the present invention. For example, a film having a transmittance of about 3% to 20% can be used as the "shading film" of the present invention. In the present invention, the "equivalent light-shielding" sound refers to "the same transmittance", and the "equivalent" is based on the transmittance of the light-shielding film which is intended to be corrected. 〇%) The difference can be within 20%. More preferably, the difference can be within 5%. Further, the term "light-shielding portion" as used in the present invention means a portion on the transparent substrate where the above-mentioned "light-shielding film" is to be formed. Therefore, when the light shielding film penetrates a part of the exposure light, the "light shielding portion" may have a predetermined transmittance. The light-shielding film contains, for example, chromium nitride (CrN), chromium oxide (CrO), chromium oxynitride (CrON), chromium fluoride ((made), etc. as a material containing chromium (Cr). Metals such as (Mo) and materials of Shi Xi (Si) have, for example,

MoSi2 ' MoSiN、MoSiON、MoSiCON 等。此外，遮光 膜也包含該等遮光膜經積層所得者。 用以適用本發明之缺陷修正方法的光罩用途並無 特別限制。可舉出例如電視、監視器等圖像顯示裝置之 領域中在TFT、濾色器等之製造上所使用之光罩。尤其 適合於一邊之尺寸超過1000mm之光罩。進而，針對此 種大型光罩以使用雷射之修正裝置來修正之情況也有 效0 39 201232164 例如’本發明可適用於多灰階光 機之曝光用光解析極限以下的遮光部與=由為曝光 之微細圖案做為穿透率控制部，對形成於，部所形成 光阻膜進行曝光、顯影後所形成之光阻圖：體士之 不同而有光阻膜厚不同之部分)，來修正因: 光解析極限以下的微細圖案所產生之缺陷的=曝先用 此種多灰階光罩所具有之穿透率控制^連 面積之(具有超過曝光機解析極限之線寬 门】： 2含有解析極限以下的微細圖案。此= 帶有具例如3μιη以下（更精密者為㈣以下产^ 圖案以及/或是間距圖案之反覆圖案。此種情況^，盍 :使得形成於被轉印體之光阻圖案膜厚成需’在 ;:圖案之寬度與間距圖案之寬度，來形成區= 透率之光穿透率控制部娜灰階光罩： 案』距圖案之寬度亦可皆為例如_ 2正裝置之最小加工尺寸來得小)，藉由線寬： 此二^數微細圖案來形成複數灰階。若本發明適用於 “罩，不會發生穿透率控制部之穿透率出現改之 障况，可進行精緻的缺陷修正。 文心 本發明適用於其他微細圖案之修正。例如，適用於 2 3μηι以下的線寬、具有微細線-間距圖案之IT〇 圖:之圖案，用光罩或是具有薄膜電晶體之微細通道 茶的光罩等之修正。 此外，可實施本發明之圖案形狀不限於線-間距圖 201232164 案，亦可適用於由曲線、彎曲線所構成之由遮光部與透 光部依序排列而其寬度小之情況。例如對例示於圖7之 (A)〜(D)之各種圖案或類似圖案亦可適宜地實施本發 明。 ' 本發明在上述大尺寸之大型光罩之修正上尤其有 利。尤其，相較於半導體裝置製造所可能使用之使用有 集束離子束之缺陷修正裝置，由於無需在真空下進行缺 陷修正，故有利於上述大尺寸光罩之修正。此乃由於除 了基於裝置之投資成本，即便從伴隨大型真空腔室之減 壓所造成之生產效率降低之觀點，也必須考量對於量產 之影響。 、 【圖式簡單說明】 圖1(A)、（B)、（C)皆為顯示本發明之光罩缺陷修正 方法的第1實施形態之俯視圖。 圖2(A)、（B)、（C)皆為顯示本發明之光罩缺陷修正 方法的第1實施形態之俯視圖。 ^ 圖3係顯示本發明之光罩缺陷修正方法 形態之俯視圖。 的第2實施 圖4係顯示本發明之光罩缺陷修正方法 形態之俯視圖。 的第2實施 圖5係顯示本發明之光罩缺陷修 形態之俯視圖。 正方法的第3實施 正方法的第3實施 圖6係顯示本發明之光罩缺陷修 形態之俯視圖。 夕 201232164 圖7(A)〜(D)皆為例示可實施本發明之圖案形狀之 俯視圖。 圖8(A)、（B)係顯示習知使用雷射之圖案修正例之 俯視圖。 【主要元件符號說明】 I, 3,6,8 修正膜 2,4,5,7 膜去除區域 21,23,25,27,29 修正膜 20,22,24,26,28 膜去除區域 31，33,35,37 修正膜 30,32,34,36,38 膜去除區域 40,42,44,46,48 修正膜 41，43,45,47 膜去除區域 10,13,15 缺漏缺陷 II, 12,14 剩餘缺陷 1T〜6T 透光部 1S〜6S 遮光部 42MoSi2 'MoSiN, MoSiON, MoSiCON, etc. Further, the light-shielding film also includes those obtained by laminating the light-shielding films. The use of the reticle to which the defect correction method of the present invention is applied is not particularly limited. For example, a photomask used in the manufacture of TFTs, color filters, and the like in the field of image display devices such as televisions and monitors can be cited. It is especially suitable for reticle with a size of more than 1000mm on one side. Further, it is also effective to correct such a large-sized photomask by using a laser correction device. 39 39 201232164 For example, the present invention can be applied to a light-shielding portion of a multi-gray scale optical machine for light exposure limit of exposure, and = The fine pattern of the exposure is used as the transmittance control unit, and the photoresist pattern formed by exposing and developing the photoresist film formed in the portion is different from the body and has a different thickness of the photoresist film) Correction due to: defects caused by fine patterns below the light resolution limit = exposure with the transmittance of the multi-gray mask to control the area of the connection (with a line width gate exceeding the resolution limit of the exposure machine): (2) A fine pattern having an analytical limit or less. This = a reverse pattern having a pattern of, for example, 3 μm or less (more precise (4) or less) and/or a pitch pattern. In this case, 盍: is formed on the transferred The thickness of the photoresist pattern of the body is required to be 'in; the width of the pattern and the width of the pitch pattern to form the area = transmittance of the light transmittance control portion of the gray scale mask: the case width can also be the width of the pattern For example, the _ 2 positive device is the most The processing size is small), by the line width: the two fine patterns to form a complex gray scale. If the present invention is applied to the "cover, the penetration rate of the transmittance control portion does not change, Performing delicate defect correction. This invention is applicable to the correction of other fine patterns. For example, it is suitable for line widths below 2 3μηι, IT drawings with fine line-pitch patterns: patterns, masks or films The correction of the mask of the fine channel tea of the transistor, etc. Further, the pattern shape in which the present invention can be implemented is not limited to the line-pitch pattern 201232164, and may be applied to the light shielding portion and the light transmission portion which are composed of curved lines and curved lines. The present invention may be suitably carried out, for example, in various patterns or the like which are exemplified in (A) to (D) of Fig. 7. The present invention is in the above-mentioned large-sized large-sized photomask. The correction is particularly advantageous. In particular, the defect correction device using a bundled ion beam, which may be used in the manufacture of a semiconductor device, is advantageous for the above-mentioned large-sized light since it is not necessary to perform defect correction under vacuum. The correction is due to the fact that, in addition to the investment cost based on the device, even from the viewpoint of the production efficiency reduction caused by the decompression of the large vacuum chamber, the influence on mass production must be considered. [Simplified description] Fig. 1 (A), (B), and (C) are plan views showing the first embodiment of the mask defect correction method of the present invention. Fig. 2 (A), (B), and (C) are diagrams showing the light of the present invention. Fig. 3 is a plan view showing a form of a mask defect correction method according to the present invention. Fig. 3 is a plan view showing a form of a mask defect correction method according to the present invention. Fig. 5 is a plan view showing a defect repairing mode of the reticle of the present invention. Fig. 6 is a plan view showing a reticle defect repairing mode of the present invention. Evening 201232164 Figures 7(A) to (D) are each a plan view illustrating a pattern shape in which the present invention can be implemented. Fig. 8 (A) and Fig. 8(B) are plan views showing a conventional example of pattern correction using a laser. [Description of main component symbols] I, 3, 6, 8 correction film 2, 4, 5, 7 film removal areas 21, 23, 25, 27, 29 correction film 20, 22, 24, 26, 28 film removal area 31, 33,35,37 Correction film 30,32,34,36,38 Membrane removal area 40,42,44,46,48 Correction film 41,43,45,47 Membrane removal area 10,13,15 Missing defect II, 12 , 14 remaining defects 1T to 6T, light transmitting portions 1S to 6S, light blocking portion 42

Claims (1)

201232164 七、申請專利範圍： 1. 種光罩缺陷修正方法’係將形成於透明基板上之 遮光膜經圖案化所形成之具有透光部與遮光部之 光罩所產生之剩餘缺陷以缺陷修正裝置來進行修 正，其特徵在於包含下述製程： 膜去除製程，係將位於透光部之該剩餘缺陷以 及和具有該剩餘缺陷之透光部鄰接之遮光部之遮 光膜之一部分予以同時去除；以及 膜形成製程，係於該膜去除製程中去除了遮光 膜之一部分的該遮光部形成修正膜； 其中於該膜形成製程所進行之膜形成係對於 具有較以該缺陷修正裝置之一次性修正操作所能 形成之最小膜形成寬度來得大寬度之遮光部來進 行0 2, 一種光罩缺陷修正方法，係將形成於透明基板上之 遮光膜經圖案化所形成之具有透光部與遮光部之 光罩所產生之剩餘缺陷以缺陷修正裝置來進行修 正，其特徵在於包含下述製程： 第1膜去除製程，係將位於透光部之該剩餘缺 陷以及和具有該剩餘缺陷之透光部鄰接之遮光部 之遮光膜之一部分予以同時去除； 膜形成製程，係於該第i膜去除製程中已去除 遮光膜之-部分的該遮光部以及鄰接於該遮光^ 之第2透光部形成修正膜；以及 S 43 201232164 該修第2透先部之 對二ΙΓ该第2膜去除製程所進行之膜去除係 所=較以該缺陷修正裝置之-次性修正操作 來it最小膜去除寬度來得大寬度之透光部 3. 4. 5. 6. 盆圍第1或2項之光罩缺陷修正方法， 缺陷之透光部係具有較以該缺陷 除寬操作所能去除之最小膜去 圍第1或2項之光罩缺陷修正方法， 邊緣和奴修正媒之 如申請專利範圍第〗或2 其中該剩餘缺陷係包含該修正膜。、峰正方法’ =光罩缺陷修正方法，係將形成於 遮光膜經圖案化所形成之且月基板上之 光罩所產生之缺漏缺陷以缺陷修正；置=部： 正；其特徵在於包含下述製程·· |置來進订修 膜形成製程，係於包含位於遮 :::具有該缺漏缺陷之遮光部鄰接 之一部分的區域形成修正膜，·叹接之透先^ 膜去除製程，係將於該膜形成 該透光部之修正獏予以去除； <王斤>成之 7. 具有1==:進行之臈去除係對於 ^之則、料除寬料得大寬叙透光部來進 種光軍缺祕正方法，切形錢 化所形成之具有透光部錢光部ΐ 正;其特徵：含缺有陷：::灿 弟1膜形成製程’係於包含位於遮光部之該缺 属缺ρ曰以及和具有該缺漏缺陷之遮光部鄰接之透 光部之一部分的區域形成修正膜； 膜去除製程，係將於該第i膜形成製程中形成 於該透光部之該修正膜以及鄰接於該透光部之第2 遮光部之遮光膜之一部分予以同時去除；以及 第2膜形成製程，係於該膜去除製程中已去除 遮光膜之一部分的該第2遮光部形成修正膜； 其中該第2膜形成製程所進行之膜形成係對 於具有較以該缺陷修正裝置之一次性修正操作所 能形成之最小膜形成寬度來得大寬度之遮光部 進行。 8.如申請專利範圍第6或7項之光罩缺陷修正方法， 其中具有該缺漏缺陷之遮光部係具有較以該缺陷 修正裝置之一次性修正操作所能形成之最小膜^ 成寬度來得小之寬度。 / S 45 201232164 9. 10 11. 12. 或7項之光罩缺陷修正方法 S = 除製程中係使得所去除之修正& 邊緣和该透光部之邊緣一致。 利範圍第6或7項之光罩缺陷修正方法 遮光缺陷修正方法去除] ==圍第H、6或7項中任-項之光， 具J該缺漏棘1其中具有該剩餘缺陷之透光部或肩 八二、缺陷之遮光部之線寬為 1 μιη以下。 正方法’係將形成於透明基板上之 光罩所、化所形成之具有透光部與遮光部之 正；其魏射㈣修正裝置來進行修 該光罩係具有由透光部與遮光部所 而成之圖案區域； 交互排列 案區域係具t較以該缺陷修正裝置之1 正操作所&去除之最]、膜去除寬度來得小 寬又之透光部，·較以該缺陷修正裝置之i次性修正 ，作所能形成之最小膜形成寬度來得小寬度之遮 先部，以及較料缺陷修正裝置之丨次性修正操作 所能去除之最小膜絲寬絲得大寬度之透光部； 且具有下述製程： 製程(A) ’係特定出自該大寬度之透光部起交 互依序數算構成該圖錢域之該小寬度之遮光部201232164 VII. Patent application scope: 1. The reticle defect correction method is to correct the remaining defects generated by the reticle with the light transmitting portion and the light shielding portion formed by patterning the light shielding film formed on the transparent substrate. The device is modified to include a process of: removing a portion of the light-shielding film of the remaining portion of the light-transmitting portion and the light-shielding portion adjacent to the light-transmitting portion having the remaining defect; And a film forming process for removing the light shielding portion of the light shielding film in the film removing process to form a correction film; wherein the film forming process performed by the film forming process has a one-time correction for the device with the defect correction device The minimum film forming width that can be formed by the operation is performed to obtain a large-width light-shielding portion for performing a mask defect correction method, wherein the light-shielding film formed on the transparent substrate is patterned to have a light-transmitting portion and a light-shielding portion. The remaining defects generated by the reticle are corrected by the defect correcting device, and are characterized by the following processes: a film removing process for simultaneously removing the remaining defect located in the light transmitting portion and a portion of the light shielding film of the light shielding portion adjacent to the light transmitting portion having the remaining defect; the film forming process is performed on the ith film removing process The light-shielding portion of the portion from which the light-shielding film has been removed, and the second light-transmitting portion adjacent to the light-shielding portion are formed into a correction film; and S 43 201232164 the second second-stage portion is replaced by the second film-removing process The membrane removal system is performed = the light transmission portion having a large width is obtained by the minimum correction operation width of the defect correction device. 3. 5. 6. The mask of the first or second division of the basin The defect correction method, the light-transmissive part of the defect has a mask defect correction method of the first or second item which is removed by the minimum film which can be removed by the defect de-blending operation, and the edge and the slave correction medium are as claimed in the patent scope. Or 2 wherein the remaining defect comprises the correction film. , peak positive method '= reticle defect correction method, which is formed by patterning the light-shielding film and forming a defect on the moon-shaped substrate, and correcting the defect by defect; setting = part: positive; characterized by In the following process, the film formation process is performed by forming a correction film in a region including a portion adjacent to the light-shielding portion having the missing defect, and a process for removing the film by a sigh. The film will be removed from the modified portion of the film to form the light-transmissive portion; <Wang Jin> into 7. With 1==: the removal of the ruthenium is performed, and the material is widened and widened. The Ministry of Light comes to plant the secret method of the light army, and the light-formed part of the light-shaping department is formed by the light-shaping department; its characteristics: the lack of trapping::: Candi 1 film formation process' Forming a correction film in the region of the light-shielding portion and the portion of the light-transmitting portion adjacent to the light-shielding portion having the defect; the film removal process is formed in the light-transmissive process in the i-th film formation process The correction film of the portion and the second shading adjacent to the light transmitting portion One portion of the light shielding film is simultaneously removed; and the second film forming process is performed by forming the second light shielding portion of the light shielding film in the film removing process to form a correction film; wherein the second film forming process is performed on the film The formation is performed for a light-shielding portion having a large width which is smaller than the minimum film formation width which can be formed by the one-time correction operation of the defect correction device. 8. The reticle defect correcting method according to claim 6 or 7, wherein the opaque portion having the missing defect has a smaller width than a minimum film width which can be formed by a one-time correcting operation of the defect correcting device The width. / S 45 201232164 9. 10 11. 12. or 7 reticle defect correction method S = In addition to the process, the removed correction & edge is consistent with the edge of the light transmission. The reticle defect correction method of the sixth or seventh item of the benefit range is removed by the shading defect correction method] == the light of any of the items H, 6 or 7 has the light leakage of the remaining defect 1 The line width of the shading portion of the part or shoulder 82 and the defect is 1 μιη or less. The positive method 'is a light-transmitting portion and a light-shielding portion formed by the photomask formed on the transparent substrate; and the Wei (4) correction device performs the repairing of the photomask with the light-transmitting portion and the light-shielding portion The patterned area is formed; the cross-correlation area is t-supplemented by the positive operation of the defect correction device, and the film removal width is small and wide, and the light-transmissive portion is corrected by the defect. The minor correction of the device, the minimum film formation width that can be formed to obtain the small width of the mask portion, and the minimum width of the film width that can be removed by the defect correction operation of the material defect correction device The light portion; and has the following process: Process (A) 'Specifically, the light-transmitting portion from the large width is used to calculate the small-width light-shielding portion of the money field. 46 201232164 與該小寬度之透光部時具有缺陷且會成為最大數 之遮光部或是透光部； 製程(B-1)，當藉由該製程(A)特定了遮光部之 日寸，於該已特定之遮光部之缺漏缺陷形成修正膜進 行修正，且於該遮光部之和該大寬度之透光部側鄰 接之透光部(a)同時暫定形成修正臈；或是 製程(B-2)’當藉由該製程(A)特定了透光部之 時，去除該已特定之透光部之剩餘缺陷進行修正， 且將該透光部之和該大寬度之透光部側鄰接之遮 光部之一部分同時暫定去除；以及 製程(C)，係將該已暫定形成或是暫定去除之 部分當作該圖案區域所產生之剩餘缺陷或是缺漏 缺陷，而反覆進行該(A)製程以及該(B_1}製程或; 該(B-2)製程之其中-製程，當於該(B_1}製程中= 透光部(a)和該大寬度之透光部成為一致時，將形^ 於該大寬度之透光部的剩餘缺陷予以去除。 13· —種光罩缺陷修正方法’係將形成於透明基板上之 遮光膜經圖案化所形成之具有透光部與遮光部之 光罩所產生之缺陷以雷射缺陷修正襞置來 正；其特徵在於： 所交互排列 該光罩係具有由透光部與遮光部 而成之圖案區域； 該圖案區域係由：較以該缺陷修正裝置之ι欠 性修正操作所能錯之最傾去除寬度來得小= S 47 201232164 度之透光部、較以該缺陷修正衰置之 作所能形成之最小膜形成寬度來得小寬戶2操 部、以及較以該缺陷修正裝 j見度之遮光 能形成之最小膜形成寬度來 ^ 生修正操作所 構成； 見度來传大寬度之遮光部所 且具有下述製程： 製程（A) ’係特定出自 互依序數算構成該圖案區二u光部起交 與該小寬度之遮光部時二 之遮光部或是透光部； I取曷攱大數 製雖D，當藉由該心 時，於該已特定之遮光部之缺漏缺陷形IS部之 行修正，且於該遮光部之和 二=正膜進 接之透光部⑷同時暫定形成修正膜%是部側鄰 製程(Β-2)，當藉由該製程 時’將該已特定之透光部之剩餘缺陷予=部， =光之透光部之和該大寬度之遮光部:ίϊ 之遮先部(a)之一部分同時暫定去除； ⑽接 製私（c) ’係將該已暫七β 部分當作於該圖案區域所;生 定去除之 漏缺陷，而反覆進行該㈧製：=缺 該㈣)製程之其中_製程，# ( ^程或是 遮光部⑷和該大寬度之遮光部成為一致 於該大寬度之遮光部之缺漏缺陷進行修正㈣成 48 201232164 14.如申請專利範圍第卜2、6、7、12或13項中任一 項之光罩缺陷修正方法，其中基於該缺陷修正裝置 =該膜形成係以雷射CVD來進行，該膜去除係以 雷射照射來進行，以該缺陷修正裝置之一次性修正 操作所能形成之最小膜形成寬度以及以一次性修 15正操作所能去除之最小膜去除寬度為Ιμιη以上。 .一種光罩製造方法，係製造形成於透明基板上之遮 光膜經圖案化所得之具有遮光部與透光部之光 罩，其特徵在於具有下述製程： 準備一於該透明基板上形成有遮光膜之空白 遮光罩之製程； 、 圖 圖 。茶化製程’係藉由光微影法使得該遮光 案化以形成至少具有遮光部與透光部之轉 案，以及 修正製程，係對於所形成之該轉印圖案上 之缺陷進行修正； 八 王 該修正製程中，係適用如申請專利範圍第卜 ^ 6、7、12或13項中任一項之光罩缺陷修正方 16. ，光罩，係形成於透明基板上之遮光膜經圖案化 光遮光部與透光部之光罩;其特徵在於該 S 49 ^U1232l64 正操陷修4置之1次性修 及 此去除之最小膜去除寬度來得大寬度；以 透光圖f區域，係使得鄰接於該大寬度之 所==::=:宽，操作 修正裝置之==: 序交:二=度來得小寬度之透光部依此順 光部於/1該大寬度之透光部鄰接之該小寬度之遮 正膜；μ-遮光部利用雷射缺陷修正裝置形成修 办亥仏正膜之邊緣係成為該第一遮光部與該大 17. 部之交界之一部分，且為藉由該雷射缺 >正裝置去除該修正膜而形成之邊緣。 專利範圍第16項之光罩，係於該圖案區域 接近第一遮光部之位置的第二遮光部 第一遮光部之修正膜與第二遮光部之修正膜 之間的距離係小於以雷射缺陷修正裝置之i次性 修正操作所能去除之最小膜去除寬度。 如申請專利範圍第16或17項之光罩，其中形成有 該修正膜之遮光部之個別的修正膜中，該大的透光 部侧的邊緣係包含已去除該修正膜之邊緣，而和該 S 50 18. 201232164 大的透光部呈相反側的邊緣不包含已去除該修正 膜之邊緣。 19. 一種圖案轉印方法，係使用以如申請專利範圍第 15項之製造方法所得之光罩與曝光裝置來對被轉 印體上進行圖案轉印。 20. —種圖案轉印方法，係使用如申請專利範圍第18 項之光罩與曝光裝置來對被轉印體上進行圖案轉 印〇 51 s46 201232164 The light-transmitting portion having the small width and having the largest number of light-shielding portions or light-transmitting portions; the process (B-1), when the light-receiving portion is specified by the process (A), Correcting the defect correction film formed in the specific light-shielding portion, and simultaneously correcting the light-transmitting portion (a) adjacent to the light-transmitting portion side of the large-width portion of the light-shielding portion; or the process (B) -2) 'When the light transmitting portion is specified by the process (A), the remaining defects of the specific light transmitting portion are removed for correction, and the light transmitting portion is combined with the large width of the light transmitting portion side One part of the adjacent light-shielding portion is temporarily temporarily removed; and the process (C) is to treat the temporarily or temporarily removed portion as a residual defect or a missing defect generated in the pattern region, and repeat the (A) The process and the (B_1) process or the process of the (B-2) process are formed when the (B_1) process = the light transmitting portion (a) and the large width light transmitting portion are identical ^ The remaining defects of the large-width light-transmissive portion are removed. 13·-Removing method of reticle defect' Defects generated by the reticle having the light transmitting portion and the light blocking portion formed by patterning the light shielding film formed on the transparent substrate are positively corrected by the laser defect; and the reticle is alternately arranged The pattern region is formed by the light-transmitting portion and the light-shielding portion; the pattern region is smaller than the most tilt-removal width that can be wrong with the defect correction operation of the defect correction device. The minimum film formation width which can be formed by the defect correction failure to obtain the minimum film formation width and the minimum film formation width formed by the shading of the defect correction device The operation is performed; the visibility is transmitted to the large-width light-shielding portion and has the following process: Process (A) 'Specifically from the mutual-order number calculation to form the pattern area two u-light part intersection and the small-width light-shielding part The light-shielding portion or the light-transmitting portion of the second; the D-number system D, when the core is used, is corrected in the defect-deficient IS portion of the specific light-shielding portion, and is in the light-shielding portion And two = positive membrane The transparent portion (4) is tentatively formed at the same time, and the correction film % is a side-side process (Β-2). When the process is used, the remaining defects of the specific light-transmitting portion are given to the portion, and the light is transmitted. And the portion of the large-width light-shielding portion: a part of the first part (a) of the ϊ 同时 暂 暂 暂 暂 ; ; ; ( ( ( ( ( ( ( 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Removing the missing defect, and repeating the (8) system: = lacking the (4) process, where the process is #, the process or the light-shielding portion (4) and the large-width light-shielding portion become the gaps corresponding to the large-width light-shielding portion. A defect correction method according to any one of the claims 2, 6, 7, 12 or 13 wherein the film formation system is laser-based By CVD, the film removal is performed by laser irradiation, and the minimum film formation width which can be formed by the one-time correction operation of the defect correction device and the minimum film removal width which can be removed by the one-time repair operation are Ιμιη above. A mask manufacturing method is a mask for manufacturing a light-shielding film formed on a transparent substrate and having a light-shielding portion and a light-transmitting portion, which is characterized by having the following process: preparing a film formed on the transparent substrate The process of the blank hood of the light-shielding film; The tea-making process is a method of photolithography to form a translucent film having at least a light-shielding portion and a light-transmitting portion, and a correction process for correcting defects on the formed transfer pattern; In the revision process of the King, the reticle defect correction method of any one of the patent application scopes, No. 6, 6, 12 or 13 is applied. The reticle is a light-shielding film pattern formed on the transparent substrate. a light mask for the light-shielding portion and the light-transmitting portion; wherein the S 49 ^U1232l64 is subjected to the first-time repair and the minimum film removal width of the removal to obtain a large width; The width of the ==::=: adjacent to the large width, the operation correction device ==: the intersection: two = degrees to obtain a small width of the light-transmitting portion according to the smooth portion of the large width of /1 The small width of the masking film adjacent to the light portion; the edge portion of the μ-light-shielding portion formed by the laser defect correcting device is a part of the boundary between the first light blocking portion and the large portion. The edge formed by removing the correction film by the laser missing > positive deviceThe reticle of the 16th item of the patent range is that the distance between the correction film of the first light-shielding portion of the second light-shielding portion and the correction film of the second light-shielding portion is smaller than the laser at the position where the pattern region is close to the first light-shielding portion. The minimum film removal width that can be removed by the defect correction device. The reticle of claim 16 or 17, wherein in the individual correction film in which the light shielding portion of the correction film is formed, the edge of the large light transmission portion side includes the edge from which the correction film has been removed, and The S 50 18.201232164 large transparent portion has an edge on the opposite side that does not include the edge from which the correction film has been removed. A pattern transfer method for pattern transfer onto a substrate by using a photomask and an exposure apparatus obtained by the manufacturing method of claim 15 of the patent application. 20. A pattern transfer method using a mask and an exposure apparatus as claimed in claim 18 for pattern transfer on a transfer target 〇 51 s
TW100135153A 2010-09-30 2011-09-29 Method of correcting a defect of a photomask, method of manufacturing a photomask, photomask, and pattern transfer method TW201232164A (en)

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