JP3075229B2 - Photomask white defect correction method - Google Patents
Photomask white defect correction methodInfo
- Publication number
- JP3075229B2 JP3075229B2 JP26559697A JP26559697A JP3075229B2 JP 3075229 B2 JP3075229 B2 JP 3075229B2 JP 26559697 A JP26559697 A JP 26559697A JP 26559697 A JP26559697 A JP 26559697A JP 3075229 B2 JP3075229 B2 JP 3075229B2
- Authority
- JP
- Japan
- Prior art keywords
- slit
- cvd
- size
- illumination image
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【発明の属する技術分野】本発明は、半導体集積回路や
液晶ディスプレイ等の製造に用いられるフォトマスクの
白欠陥の修正方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for correcting a white defect of a photomask used for manufacturing a semiconductor integrated circuit, a liquid crystal display or the like.
【0002】[0002]
【従来の技術】従来、フォトマスクの白欠陥すなわち欠
損欠陥の修正方法として、原料ガスの雰囲気中に置かれ
たフォトマスク基板に紫外線レ−ザ光を照射し、レ−ザ
CVD法を用いて、原料ガスの光分解反応により遮光膜
を所望の白欠陥部に堆積させて修正する方法が知られて
いる。2. Description of the Related Art Conventionally, as a method for correcting a white defect, ie, a defect defect, of a photomask, a photomask substrate placed in an atmosphere of a source gas is irradiated with ultraviolet laser light, and a laser CVD method is used. In addition, a method is known in which a light-shielding film is deposited on a desired white defect portion by a photodecomposition reaction of a raw material gas to correct it.
【0003】このような白欠陥修正方法の一例として、
特開平2―204746号公報に記載のように、レ−ザ
光とレ−ザ光照射位置観察用の照明光をスリットで矩形
に整形し、これらの整形されたレ−ザビ−ムと整形され
たスリット照明光とをフォトマスク基板上に縮小転写す
る照射光学系を用いて、白欠陥を修正する方法がある。
具体的には、スリットのサイズを調整し、フォトマスク
基板上に結像されたスリット照明像を白欠陥部に目合わ
せし、その後、レーザ光を照射して白欠陥を修正する方
法である。As an example of such a white defect repair method,
As described in JP-A-2 -204,746, Le - The light and Re - the illumination light for laser light irradiation position observed shaped into a rectangular slit, these the shaped les - Zabi - beam and is shaped There is a method of correcting a white defect by using an irradiation optical system for reducing and transferring the slit illumination light onto a photomask substrate.
Specifically, the method is to adjust the size of the slit, align the slit illumination image formed on the photomask substrate with the white defect portion, and then irradiate a laser beam to correct the white defect.
【0004】[0004]
【発明が解決しようとする課題】上述した従来のレーザ
CVDによる白欠陥修正方法では、フォトマスク基板上
に結像されたスリット照明像を欠陥部のエッジに目合わ
せして修正する場合、スリット照明像を欠陥のエッジに
正確に目合わせしても、実際に堆積したCVD膜の形状
が欠陥部のエッジに対し、膨らんだり、または、光学的
な調整によっては逆に内側になったりする問題が生じて
いた。これは、特に、高精度の加工精度を必要とするL
SI用のフォトマスク修正では、現実的な問題であり、
微細化が進みつつあるTFT液晶基板用のフォトマスク
では将来的な問題となる。このため、高精度な修正加工
を行うためには、最初に欠陥部をその欠陥部より大きく
CVD膜で覆い、その後、残留欠陥を修正する黒欠陥修
正機能によりエッジから膨らんだ部分を削り取る方法が
用いられていた。In the above-described conventional method for correcting a white defect by laser CVD, when a slit illumination image formed on a photomask substrate is corrected by aligning it with an edge of a defect portion, a slit illumination is performed. Even if the image is accurately aligned with the edge of the defect, the problem is that the shape of the actually deposited CVD film may bulge or become inward due to optical adjustment with respect to the edge of the defect. Had occurred. This is especially true for L, which requires high processing accuracy.
Fixing photomasks for SI is a real problem,
A photomask for a TFT liquid crystal substrate, which is being miniaturized, will be a problem in the future. Therefore, in order to perform high-precision correction processing, a method of first covering a defective portion with a CVD film larger than the defective portion, and then shaving off a portion bulging from the edge by a black defect correction function for correcting a residual defect. Was used.
【0005】しかしながら、このような2段階の修正工
程は、目合わせを2度行う必要があり、修正のスループ
ットが低下することや、作業者の負担が大きいという課
題を有していた。また、上述の2段階修正工程は、パタ
ーンが近接している場合、光学的な結像性能限界のため
に黒欠陥の最小加工幅が隣接のパターンへ重なってしま
い2段階目の黒欠陥修正を適用できないという課題を有
していた。[0005] However, such a two-stage correction process requires two adjustments, and has a problem that the correction throughput is reduced and the burden on the operator is large. In the above-described two-step correction process, when the patterns are close to each other, the minimum processing width of the black defect overlaps with the adjacent pattern due to the optical imaging performance limit, and the second-step black defect correction is performed. There was a problem that it could not be applied.
【0006】本発明の目的は、従来のこのような課題を
解決し、修正工程の能率を向上させ、しかも、欠陥部の
エッジに高精度で目合わせされたCVD膜を成膜できる
フォトマスクの白欠陥修正方法を提供するものである。An object of the present invention is to solve such a conventional problem, improve the efficiency of a repairing process, and furthermore, provide a photomask capable of forming a CVD film precisely aligned with the edge of a defective portion. It is intended to provide a method for correcting a white defect.
【0007】[0007]
【課題を解決するための手段】本発明のフォトマスクの
白欠陥修正方法は、原料ガス雰囲気中のフォトマスク基
板上に、矩形のスリットにより整形されたレーザビーム
を照射光学系により縮小し照射して、レーザCVD成膜
法により、フォトマスクの白欠陥を修正するフォトマス
ク欠陥修正方法において、前記スリットにより整形され
た照明光を前記照射光学系により縮小し照射して前記フ
ォトマスク基板上に結像された第1のスリット照明像を
白欠陥部に目合わせしてCVD膜を成膜する位置と前記
CVD膜のサイズを特定するための第1工程と、前記第
1のスリット照明像をCVD広がり補正因子と前記照射
光学系の色収差による倍率補正因子でスリットサイズを
補正して第2のスリット照明像を形成する第2工程と、
前記第2のスリット照明像でレーザビームを照射してC
VD膜を成膜する第3工程とを有することを特徴として
いる。According to the present invention, there is provided a method for correcting a white defect of a photomask, which comprises irradiating a laser beam, shaped by a rectangular slit, on a photomask substrate in an atmosphere of a source gas by reducing and irradiating the same with an irradiation optical system. In a photomask defect correction method for correcting a white defect of a photomask by a laser CVD film forming method, illumination light shaped by the slit is reduced and irradiated by the irradiation optical system to form a light on the photomask substrate. A first step for specifying the position of a CVD film to be formed by aligning the imaged first slit illumination image with a white defect portion and a size of the CVD film; A second step of correcting a slit size with a spread correction factor and a magnification correction factor due to chromatic aberration of the irradiation optical system to form a second slit illumination image;
Irradiating a laser beam with the second slit illumination image
And a third step of forming a VD film.
【0008】また、本発明のフォトマスクの白欠陥修正
方法は、前記第1のスリット照明像のサイズをXとし、
前記第2のスリット照明像のサイズをX’とし、前記C
VD広がり補正因子をaとし、前記倍率補正因子をbと
するとき、 X’=(1―b)X―a の関係式を満たすようスリットサイズの補正を行うこと
を特徴としている。In the method for correcting a white defect of a photomask according to the present invention, the size of the first slit illumination image is X,
Let X 'be the size of the second slit illumination image,
When the VD spread correction factor is a and the magnification correction factor is b, the slit size is corrected so as to satisfy the relational expression of X ′ = (1−b) X−a.
【0009】さらに、本発明のフォトマスクの白欠陥修
正方法は、複数の前記CVD広がり補正因子と前記倍率
補正因子と保持し、所望のCVD膜に応じて1組の最適
なCVD広がり補正因子と倍率補正因子を選択してスリ
ットサイズの補正を行うことを特徴としている。Further, the method for correcting a white defect of a photomask according to the present invention is characterized in that a plurality of the CVD spread correction factors and the magnification correction factors are held, and a set of optimal CVD spread correction factors is set according to a desired CVD film. It is characterized in that the slit size is corrected by selecting a magnification correction factor.
【0010】[0010]
【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。Next, embodiments of the present invention will be described with reference to the drawings.
【0011】図1は、本発明のフォトマスクの白欠陥修
正方法の―つの実施の形態を示すための工程図である。
図1(a)はスリット照明像を欠陥部に目合わせする第
1工程で、図1(b)はスリットサイズ補正後のスリッ
ト照明像を欠陥部に位置合わせする第2工程で、図1
(c)はレーザCVDで成膜する第3工程である。フォ
トマスクは、図1(a)に示すように、LSI用の石英
系のフォトマスク基板3上に遮光膜のCr膜2が形成さ
れているものである。欠陥部4は、Cr膜2の−部に膜
のない部分である。FIG. 1 is a process chart showing one embodiment of a method for correcting a white defect of a photomask according to the present invention.
FIG. 1A shows a first step of aligning the slit illumination image with the defect, and FIG. 1B shows a second step of aligning the slit illumination image after the slit size correction with the defect.
(C) is a third step of forming a film by laser CVD. As shown in FIG. 1A, the photomask is formed by forming a light-shielding Cr film 2 on a quartz-based photomask substrate 3 for LSI. The defective portion 4 is a portion where no film is present in the-part of the Cr film 2.
【0012】以下の実施の形態例では、CVD膜の成膜
条件として、レーザCVD光源にQスイッチNd:YA
Gレーザの第4高調波(266nm、40ns、2kH
z)を用い、原料ガスにCr(CO)6(原料濃度:
0.3Torr、CVD圧力:1気圧、キャリアガス:
アルゴンガス)を用い、高繰り返しパルスレーザ光によ
るCrの光CVD法により白欠陥の修正を行う場合であ
る。使用する照射光学系は、レーザ光源からの出射光と
スリット照明光を同軸にして、スリットを通過させ、得
られたレーザビ−ムおよびスリット照明光から成る整形
されたビ−ムをフォトマスク基板上に250分の1の縮
小比で縮小転写すると共に、前記基板上のフォトマスク
のパタ−ンを顕微光学系により拡大して観察する機能を
有している。白欠陥修正時に観察される像は、図1
(a)に示すように、フォトマスクの白欠陥拡大画像の
一部に、目合わせ用のスリット照明像が重なっているも
のである。このスリット照明像の形状とレーザビ−ムの
照射形状とは、光学系の色収差による違いがあるもの
の、ほぼ同じであるので、スリット照明像でレーザビ−
ムの照射形状を観察できる。In the following embodiment, a Q-switch Nd: YA
The fourth harmonic of the G laser (266 nm, 40 ns, 2 kHz)
z) and Cr (CO) 6 (raw material concentration:
0.3 Torr, CVD pressure: 1 atm, carrier gas:
This is a case where a white defect is corrected by a photo-CVD method of Cr using a high repetition pulse laser beam using argon gas. The irradiation optical system used is such that the emitted light from the laser light source and the slit illumination light are made coaxial and passed through the slit, and the obtained beam formed by the laser beam and the slit illumination light is placed on a photomask substrate. And a function of reducing and transferring the image at a reduction ratio of 1/250 and observing the pattern of the photomask on the substrate by enlarging it with a microscopic optical system. The image observed when correcting white defects is shown in FIG.
As shown in (a), a slit illumination image for alignment overlaps a part of the enlarged white defect image of the photomask. The shape of the slit illumination image and the irradiation shape of the laser beam are almost the same, although there is a difference due to the chromatic aberration of the optical system.
The irradiation shape of the camera can be observed.
【0013】さて、図1にしたがって、本発明の白欠陥
修正法の工程を説明する。Now, the steps of the white defect correcting method of the present invention will be described with reference to FIG.
【0014】第1工程では、図1(a)に示すように、
スリットサイズを調整し、観察用のスリット照明光によ
るスリット照明像1をCr膜2上の欠陥部4のエッジに
合わせるように目合わせを行う。スリット照明像1のサ
イズは所望のCVD膜のサイズである。このとき、も
し、前記スリットサイズを保持してレーザ光を照射しC
VD膜を成膜すると、スリット照明像1のサイズより大
きなCVD膜が形成され、所望のサイズのCVD膜が得
られない。所望のサイズのCVD膜を得るためには、ス
リット照明像のサイズに対する成膜されたCVD膜のサ
イズの関係を知る必要がある。図2はスリット照明像の
一辺の長さに対しCVD膜のパターン長さの広がり分を
示す図で,図2(a)はCVD膜のパターン長さの広が
り状態を示す図で,図2( b )はCVD膜のパターン
長さの広がり分の依存性を示す図である。図2(a)に
示すように、スリット照明像の長さLに対して成膜され
たCVD膜のパターン長さは広がり分ΔLだけ広がる。
前記成膜条件でのCVD膜のパターン長さの広がり分Δ
Lの依存性は、図2(b)に示すように、広がり分ΔL
はスリット照明像の長さLに依存しない定数成分と、ス
リット照明像の長さLが大きくなるほど増えるスリット
照明像の長さLに依存する成分の2つの成分からなるこ
とがわかる。広がり分ΔLのほとんどは定数成分で、こ
れは、CVD反応そのものの性質で決まり、レーザ光照
射範囲より膜の堆積範囲が基板面内で広がる成分であ
る。―方、スリット照明像の長さLに比例する成分は、
スリット照明光の波長とレーザ光の波長との違いにより
おこる照射光学系の色収差による倍率のわずかな差のた
めに生じる成分である。前記定数成分をCVD広がり補
正因子aと呼び、前記比例する成分を倍率補正因子bと
呼べば、図2(b)より、 CVD広がり補正因子aは
0.06μm、倍率補正因子bは0.001となること
がわかる。In the first step, as shown in FIG.
The slit size is adjusted, and alignment is performed so that the slit illumination image 1 by the observation slit illumination light is aligned with the edge of the defect 4 on the Cr film 2. The size of the slit illumination image 1 is a desired size of the CVD film. At this time, if the laser beam is irradiated while maintaining the slit size, C
When a VD film is formed, a CVD film larger than the size of the slit illumination image 1 is formed, and a CVD film having a desired size cannot be obtained. In order to obtain a CVD film of a desired size, it is necessary to know the relationship between the size of the formed CVD film and the size of the slit illumination image. FIG. 2 is a diagram showing the spread of the pattern length of the CVD film with respect to the length of one side of the slit illumination image. FIG. 2A is a diagram showing the spread state of the pattern length of the CVD film. FIG. 3B is a diagram showing the dependence of the pattern length of the CVD film on the spread. As shown in FIG. 2A, the pattern length of the CVD film formed with respect to the length L of the slit illumination image is increased by an extension ΔL.
The spread Δ of the pattern length of the CVD film under the above film forming conditions Δ
L depends on the spread ΔL as shown in FIG.
It can be seen that there are two components: a constant component that does not depend on the length L of the slit illumination image, and a component that depends on the length L of the slit illumination image, which increases as the length L of the slit illumination image increases. Most of the spread ΔL is a constant component, which is determined by the nature of the CVD reaction itself, and is a component in which the deposition range of the film spreads more in the substrate surface than in the laser beam irradiation range. -The component proportional to the length L of the slit illumination image is
This is a component generated due to a slight difference in magnification due to chromatic aberration of the irradiation optical system caused by a difference between the wavelength of the slit illumination light and the wavelength of the laser light. If the constant component is called a CVD spread correction factor a and the proportional component is called a magnification correction factor b, from FIG. 2B, the CVD spread correction factor a is 0.06 μm, and the magnification correction factor b is 0.001. It turns out that it becomes.
【0015】第2工程では、図1(b)に示すように、
所望の大きさのCVD膜が得られる様に前記補正因子を
用いてスリットサイズを補正しスリット照明像1のサイ
ズを補正する。第一工程時の設定スリットサイズで決定
されるスリット照明像1の縦の長さをX、横の長さをY
とし、およびレーザ光照射時のスリット照明像の縦の長
さをX’、横の長さY’とするとき、前記CVD広がり
補正因子aと前記倍率補正因子bとを用いて、得られた
関係式 X’=(1―b)X―a Y’=(1―b)Y―a を満たすようスリットサイズを補正する。スリットサイ
ズ補正後のスリット照明像5は、CVDによるパターン
長さの広がり分をキャンセルできるよう第1工程でのス
リット照明像1よりわづかに小さくなっている。In the second step, as shown in FIG.
The slit size is corrected by using the correction factor so as to obtain a CVD film having a desired size, and the size of the slit illumination image 1 is corrected. The vertical length of the slit illumination image 1 determined by the set slit size in the first step is X, and the horizontal length is Y
And when the vertical length of the slit illumination image at the time of laser beam irradiation is X ′ and the horizontal length is Y ′, the slit illumination image is obtained using the CVD spread correction factor a and the magnification correction factor b. The slit size is corrected so as to satisfy the relational expression X '= (1-b) Xa Y' = (1-b) Ya. The slit illumination image 5 after the slit size correction is slightly smaller than the slit illumination image 1 in the first step so that the spread of the pattern length due to CVD can be canceled.
【0016】第3工程は、図1(c)に示すように、レ
ーザCVDによる成膜工程で、上記関係式により補正し
たスリットサイズでレーザ光を照射しCVD膜を成膜す
る。この結果、欠陥部4のエッジに正確に目合わせされ
た所望のレーザCVD膜のパターン6を形成することが
できる。In the third step, as shown in FIG. 1 (c), a film is formed by laser CVD, and a CVD film is formed by irradiating a laser beam with a slit size corrected by the above relational expression. As a result, a desired laser CVD film pattern 6 accurately aligned with the edge of the defect 4 can be formed.
【0017】なお、第2工程は、スリットサイズを制御
するコントローラに補正量を計算させる演算ユニットを
設けることで容易に実現でき、作業者に余分な作業を必
要としない。The second step can be easily realized by providing a controller for controlling the slit size with an arithmetic unit for calculating the correction amount, and does not require any extra work for the operator.
【0018】CVD広がり補正因子aと倍率補正因子b
は、レーザCVD条件や光学系の調整によりわづかに変
化するが、通常、経時変化しないので装置を組み立て調
整した時点で、図2に示すCVD膜のパターン長さの広
がり分のスリット照明像の長さの依存性を測定して、前
記補正因子の値を求めておけば、装置の固有変数として
以後変更する必要はない。A CVD spread correction factor a and a magnification correction factor b
Is slightly changed by the adjustment of the laser CVD conditions and the optical system, but usually does not change with time. Therefore, when the apparatus is assembled and adjusted, the slit illumination image of the spread of the pattern length of the CVD film shown in FIG. If the value of the correction factor is determined by measuring the dependence of the length, there is no need to change it as an intrinsic variable of the device.
【0019】一方、従来のようにスリットサイズの補正
を行わない場合には、第一工程時に正確にエッジへの目
合わせを行っても、設定スリット幅が20μmの場合に
は、エッジのはみ出しが0.1μm程度発生してしま
い、高精度の修正を必要とする場合大きな問題となる。On the other hand, when the slit size is not corrected as in the prior art, even when the edge is accurately aligned in the first step, if the set slit width is 20 μm, the edge protrudes. It is about 0.1 μm, which is a serious problem when high-precision correction is required.
【0020】本発明の別の実施の形態例について説明す
る。Another embodiment of the present invention will be described.
【0021】上述した本発明の実施の形態例では、スリ
ットサイズの補正をする補正値はCVD広がり補正因子
aと倍率補正因子bに対して一組の場合についてのべた
が、白欠陥修正を行うフォトマスク基板の種類に応じて
成膜条件を変更する必要がある場合や、修正すべき白欠
陥の大きさにより対物レンズの倍率を変更する必要があ
る場合には、複数の補正値のセットを装置に組み込み、
対象に応じて最適な補正値のセットを選択する機能を持
つことにより、融通の高い白欠陥修正方法を提供でき
る。In the above-described embodiment of the present invention, the correction value for correcting the slit size is one set for the CVD spread correction factor a and the magnification correction factor b. When it is necessary to change the film forming conditions according to the type of the photomask substrate, or when it is necessary to change the magnification of the objective lens depending on the size of the white defect to be corrected, set a plurality of correction values. Built into the device,
By providing a function of selecting an optimal set of correction values according to an object, a highly versatile white defect correction method can be provided.
【0022】[0022]
【発明の効果】以上説明したように、本発明は、観察時
のスリット照明像のサイズに対して、CVD膜の成膜加
工時のスリット照明像のサイズすなわちレ−ザビ−ムの
サイズを補正して成膜加工するので、白欠陥の修正作業
工程の能率を向上させ、しかも欠陥部のエッジに高精度
で目合わせされたCVD膜を成膜できるので、実用性に
優れる高精度なフォトマスクの白欠陥修正方法を実現す
ることができる効果を有する。As described above, the present invention corrects the size of the slit illumination image, ie, the size of the laser beam, when forming a CVD film with respect to the size of the slit illumination image during observation. High-precision photomask with excellent practicality because it can improve the efficiency of the white defect repair work process, and can form a CVD film that is precisely aligned at the edge of the defective portion. Has the effect of realizing the white defect correction method described above.
【図1】本発明のフォトマスクの白欠陥修正方法の一つ
の実施の形態を示すための工程図である。FIG. 1 is a process diagram showing one embodiment of a method for correcting a white defect of a photomask according to the present invention.
【図2】スリット照明像の一辺の長さに対しCVD膜の
パターン長さの広がり分を示す図である。FIG. 2 is a diagram showing a spread of a pattern length of a CVD film with respect to a length of one side of a slit illumination image.
1 スリット照明像 2 Cr膜 3 フォトマスク基板 4 欠陥部 5 スリットサイズ補正後のスリット照明像 6 レーザCVD膜のパターン DESCRIPTION OF SYMBOLS 1 Slit illumination image 2 Cr film 3 Photomask substrate 4 Defect part 5 Slit illumination image after slit size correction 6 Laser CVD film pattern
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平2−204746(JP,A) 特開 平1−195451(JP,A) 特開 平1−118135(JP,A) 特開 平1−106062(JP,A) 特開 昭61−228626(JP,A) 特開 平5−265193(JP,A) 特開 平8−106155(JP,A) (58)調査した分野(Int.Cl.7,DB名) G03F 1/00 - 1/16 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-2-204746 (JP, A) JP-A-1-195451 (JP, A) JP-A-1-118135 (JP, A) JP-A-1- 106062 (JP, A) JP-A-61-228626 (JP, A) JP-A-5-265193 (JP, A) JP-A 8-106155 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) G03F 1/00-1/16
Claims (3)
に、矩形のスリットにより整形されたレーザビームを照
射光学系により縮小し照射して、レーザCVD成膜法に
より、フォトマスクの白欠陥を修正するフォトマスク欠
陥修正方法において、前記スリットにより整形された照
明光を前記照射光学系により縮小し照射して前記フォト
マスク基板上に結像された第1のスリット照明像を白欠
陥部に目合わせしてCVD膜を成膜する位置と前記CV
D膜のサイズを特定するための第1工程と、前記第1の
スリット照明像をCVD広がり補正因子と前記照射光学
系の色収差による倍率補正因子でスリットサイズを補正
して第2のスリット照明像を形成する第2工程と、前記
第2のスリット照明像でレーザビームを照射してCVD
膜を成膜する第3工程とを有することを特徴とするフォ
トマスクの白欠陥修正方法。1. A laser beam shaped by a rectangular slit is reduced and irradiated by an irradiation optical system onto a photomask substrate in a source gas atmosphere, and a white defect of the photomask is corrected by a laser CVD film forming method. In the method for correcting a photomask defect, the illumination light shaped by the slit is reduced and irradiated by the irradiation optical system, and the first slit illumination image formed on the photomask substrate is aligned with a white defect portion. Where the CVD film is formed by
A first step for specifying the size of the D film, and a second slit illumination image obtained by correcting the slit size of the first slit illumination image with a CVD spread correction factor and a magnification correction factor due to chromatic aberration of the irradiation optical system. A second step of forming a laser beam by irradiating a laser beam with the second slit illumination image.
And a third step of forming a film.
し、前記第2のスリット照明像のサイズをX’とし、前
記CVD広がり補正因子をaとし、前記倍率補正因子を
bとするとき、 X’=(1―b)X―a の関係式を満たすようスリットサイズの補正を行うこと
を特徴とする請求項1記載のフォトマスクの白欠陥修正
方法。2. When the size of the first slit illumination image is X, the size of the second slit illumination image is X ′, the CVD spread correction factor is a, and the magnification correction factor is b. 2. The method according to claim 1, wherein the slit size is corrected so as to satisfy a relational expression of X '= (1-b) Xa.
率補正因子と保持し、所望のCVD膜に応じて1組の最
適なCVD広がり補正因子と倍率補正因子を選択してス
リットサイズの補正を行うことを特徴とする請求項1記
載のフォトマスクの白欠陥修正方法。3. A plurality of said CVD spread correction factors and said magnification correction factors are held, and a set of optimal CVD spread correction factors and magnification correction factors are selected according to a desired CVD film to correct the slit size. 2. The method according to claim 1, wherein the method is performed.
Priority Applications (1)
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JP26559697A JP3075229B2 (en) | 1997-09-30 | 1997-09-30 | Photomask white defect correction method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26559697A JP3075229B2 (en) | 1997-09-30 | 1997-09-30 | Photomask white defect correction method |
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JPH11109604A JPH11109604A (en) | 1999-04-23 |
JP3075229B2 true JP3075229B2 (en) | 2000-08-14 |
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JP2012073553A (en) * | 2010-09-30 | 2012-04-12 | Hoya Corp | Defect correcting method of photomask, manufacturing method of photomask, photomask, and pattern transfer method |
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