TW201231430A - Conductive paste and solar battery cell using said conductive paste - Google Patents
Conductive paste and solar battery cell using said conductive paste Download PDFInfo
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- TW201231430A TW201231430A TW101100208A TW101100208A TW201231430A TW 201231430 A TW201231430 A TW 201231430A TW 101100208 A TW101100208 A TW 101100208A TW 101100208 A TW101100208 A TW 101100208A TW 201231430 A TW201231430 A TW 201231430A
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- 239000011521 glass Substances 0.000 claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 10
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 5
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 239000012776 electronic material Substances 0.000 claims description 2
- 239000006071 cream Substances 0.000 claims 1
- NOTVAPJNGZMVSD-UHFFFAOYSA-N potassium monoxide Inorganic materials [K]O[K] NOTVAPJNGZMVSD-UHFFFAOYSA-N 0.000 abstract description 4
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 6
- 238000001354 calcination Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 238000007496 glass forming Methods 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 208000002874 Acne Vulgaris Diseases 0.000 description 1
- 101100055113 Caenorhabditis elegans aho-3 gene Proteins 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 1
- 235000012765 Cannabis sativa ssp. sativa var. spontanea Nutrition 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 206010000496 acne Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000009120 camo Nutrition 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 235000005607 chanvre indien Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000005447 environmental material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011487 hemp Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000001648 tannin Substances 0.000 description 1
- 235000018553 tannin Nutrition 0.000 description 1
- 229920001864 tannin Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Description
201231430 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種可用作形成於矽半導體太陽電池中之 電極的不含錯之導電性膏。 【先前技術】 作為使用半導體矽基板之電子零件,已知有圖1所示之 太陽電池元件。如圖1所示’太陽電池元件係於厚度為2〇〇 μιη左右之p型半導體矽基板丨之受光面側形成η型半導體石夕 層2’且於受光面側表面形成有用以提昇受光效率之氮化 矽膜等防反射獏3’進而於該防反射臈3上形成有與半導體 連接之表面電極4。 又’於ρ型半導體矽基板1之背側均勻地形成有鋁電極層 5。該鋁電極層5—般而言藉由使用網版印刷等塗佈鋁膏材 料,且於600〜900°C左右之溫度下短時間煅燒而形成,上 述铭膏材料矽含有包含鋁粉末、玻璃料、乙基纖維素或丙 烯酸系樹脂等黏合劑之有機媒劑。 於該銘膏材料之锻燒中,藉由銘擴散至P型半導體石夕基 板1,而於鋁電極層5與ρ型半導體矽基板丨之間,形成稱作 BSF(Back Surface Field,背面電場)層6之以_八丨共晶層,進 而形成鋁擴散之雜質層p+層7。該p+層7係發揮抑制因pn接 面之光電動勢效應而生成之載子之復合造成之損失之效 果,從而有助於太陽電池元件之轉換效率提昇。關於該 BSF效果,揭示有例如專利文獻!或專利文獻2等所揭示, 作為包含於鋁膏材料中之玻璃料,可藉由使用含鉛之玻璃 161407.doc 201231430 而獲得較高之效果。 先前技術文獻 專利文獻 專利文獻1:曰本專利特開2007-59380號公報 專利文獻2:曰本專利特開2003-165744號公報 【發明内容】 發明所欲解決之問題 一般而言,p +層之表面電阻與BSF效果存在相關性,p + 層之表面電阻越低BSF效果越高,且作為太陽電池元件之 轉換效率越高。 上述含船成分之玻璃料可藉由使用於如鋁膏材料之導電 性膏中而獲得較高之BSF效果,進而於使上述導電性膏成 為低溶點之方面為重要之成分’但對人體或環境會造成較 大危害。上述專利文獻1及專利文獻2存在於導電性膏中包 含鉛成分之問題。 因此,本發明之目的在於獲得一種可用作形成於矽半導 體太陽電池之電極之不含船之導電性膏。 解決問題之技術手段 本發明之導電性膏之特徵在於:其係使用半導體矽基板 之太陽電池用導電性膏’且該導電性f中所含之玻璃料之 組成實質上不含鉛成分,且以質量%計包含5〜15之“〇2、 20〜40之82〇3、〇〜1〇之_3、3()〜45之211〇、5〜觀奶(選 自由Mg〇、Ca0、Sr〇 '及Ba〇所組成之群中之至少i種之 合計)、及(M〜6之R2〇(選自由Li2〇、、及K2〇所組成 161407.doc 201231430 之群中之至少1種之合計)。 於利用使用含鉛玻璃料之導電性膏情形時,由於p+層之 表面電阻呈現20〜3 0 Ω/□左右,故使用本發明之導電性膏 時之P +層之表面電阻較佳為30 Ω/□下。該表面電阻越 低’則用作太陽電池元件之情形時,轉換效率越高。 於本發明中’可藉由使玻璃料中含有之r2〇量增加,而 使P+層之表面電阻變為低於30 Ω/□值,但於包含超過6質 量%之該R2〇情形時,由於存在因該尺…之鹼性成分變多而 呈現潮解性之情形,故於本發明中使該心〇為6質量%以 下。 又,本發明之上述玻璃料之特徵在於:3〇<>c〜3〇〇„c下之 熱膨脹係數為(55〜85)x1(r7/t,且軟化點為55(rc以上 65(TC以下。又,於本發明中,上述熱膨脹係數係指線性 膨脹係數》 發明之效果 可藉由本發明,而獲得包含不含鉛之玻璃料之導電性 。可藉由將本發明之導電性f用作太陽電池元件,而獲 膏 得較向之BSF效果。又,可猫^曰也,杜 双禾又了獲彳讀半導㈣基板良好之密 接性。進而,由於實質上不句冬 匕3起成分,故不會對人體或 環境造成危害。 【實施方式】 本發明之導電性膏係不僅句人人+ 尔不僅包含含有鋁粉末與乙基纖維素 或丙烯酸系樹脂等黏合劑之有機 ’賤嫖劑’而且包含玻璃料, 且該玻璃料實質上不含鉛成分,曰丨、,麻β 取η 且以質量%計包含5〜15之 I61407.doc 201231430
Si02、20〜40之 B2〇3、0〜10之 a1203、30〜45之 Zn〇、5〜30之 R〇(選自由MgO、CaO、SrO、及BaO所組成之群中之至少 1種之合計)、及0.1〜6之尺2〇(選自由Li20、Na2〇、及尺2〇所 組成之群中之至少1種之合計)。 於本發明之玻璃料中,Si〇2為玻璃形成成分,且可藉由 使其與作為其他之玻璃形成成分之B2〇3共存而形成穩定之 玻璃’並使其含有5〜15%(質量%,以下亦相同卜若超過 1 5°/。’則玻璃之軟化點上升,難以用作導電性膏。更佳為 7〜13%之範圍。 B2〇3係玻璃形成成分,且使玻璃熔融變得容易,抑制玻 璃之熱膨脹係數之過度上升,且於鍛燒時對玻璃賦予流動 性,使玻璃之介電係數降低,且使其於玻璃中含有 20〜40%。若未達20%,則會因玻璃之流動性變得不充分而 損及燒結性,另一方面若超過40❶/。,則玻璃之穩定性下 降。又,更佳為25〜35%之範圍。
AhO3係抑制玻璃結晶化之成分。使其於玻璃中含有 〇〜10% ’但若超過10%,則會導致玻璃之軟化點上升,難 以用作導電性膏。
ZnO係使玻璃之軟化點降低之成分,且使其於玻璃中含 有3 0〜4 5 %。若未達3 0 %則無法發揮上述作用,若超過4 5 % 則玻璃變得不穩定,易產生結晶。又,更佳為35〜42%之 範圍。 R〇(選自由MgO、CaO、SrO、及BaO所組成之群中之至 少1種之合計)係使玻璃之軟化點降低者,且使其於玻璃中 161407.doc 201231430 含有5〜30% ^若未達5%則玻璃之軟化點之下降變得不充 分,使燒結性受損《另一方面,若超過3〇%則存在玻璃之 熱膨脹係數變得過高之情形。更佳為】〇〜27%之範圍内。 1〇(選自由LhO、Na2〇、及κ:2〇所組成之群中之至少j 種之合計)係使玻璃之軟化點降低,將熱膨脹係數調整於 適當範圍者,並使其包含於範圍内。若未達〇 1% 則玻璃之軟化點之下降變得不充分,使燒結性受損。另一 方面,若超過6%則存在導致熱膨脹係數過度地上升之情 形。更佳為2〜6%之範圍。再者,較佳為至少包含κ2〇作為 R>2〇 〇 其他亦可添加由普通之氧化物表示之Cu〇、Ti〇2、
In203、Bi203、Sn02、及 Te〇2等。 可藉由實質上不含鉛(以下亦存在記載為pb〇之情形), 而消除對人體或環境造成之影響。此處,所謂實質上不包 含PbO係指Pb0作為雜質混入至玻璃原料中之程度的量。 例如,若為低熔點玻璃中之〇.3%以下之範圍,則上述之危 害、即對人體、環境之料、以及對絕緣特性等造成之影 響幾乎不存在’從而實質上不會受到pb〇之影響。 可藉由使用上述玻璃料,而獲得3Gt〜3⑽。c下之熱膨服 係數為(55〜80)x urYc且軟化點為55〇t以上65〇。〇以下之 導電性膏。若熱膨脹係數偏離(55〜85)xl0_7/t>c,則於電極 形成時會產生剝離、基板之翹曲等問題。較佳為(60〜75> …/。。之範圍❶又’若軟化點超過峨^锻燒時未充 分地流動,故而會產生與半導體石夕基板之密接性變差等問 161407.doc 201231430 題。較佳為上述軟化點為58〇°C以上63〇t以下。 本發明之導電性膏可以上述方式用於太陽電池元件。 又,進而該導電性膏可以低溫煅燒,故亦可用作使用銀或 鋁等之配線圖案之形成材料或各種電極等電子材料用基 板。 實施例 以下’基於實施例進行說明。 (導電性膏) 首先,玻璃料末係以達到實施例中記載之特定組成之方 式,將各種無機原料秤量後進行混合,製作原料配料。將 該原料配料投入至鉑坩堝,於電加熱爐内以1〇〇〇〜13〇〇t: 加熱熔融1〜2小時,獲得表}之實施例卜5、表2之比較例 1〜4所示組成之玻璃》使玻璃之一部分流入模具中,成為 塊狀,供熱物性(熱膨脹係數、軟化點)測定用。利用驟冷 雙輥成形機,使剩餘之玻璃成為薄片狀,並使用粉碎裝 置,整粒為平均粒徑丨〜4 μιη、最大粒徑未達1〇 之粉末 狀。 再者’上述軟化點係使用熱分析裝置TG-DTA(Rigaku股 伤有限公司製造)進行測定。又,上述熱膨脹係數係使用 熱膨服什’根據以5°C /分鐘進行升溫時30〜300。(:下之伸長 量求出線性膨脹係數。 繼而’以特定比例將作為黏合劑之乙基纖維素與上述玻 璃叙、又作為導電性粉末之鋁粉末混合於包含α松脂醇與 丁基卡必醇醋酸酯之膏油中,製備黏度為500±50泊左右之 161407.doc 201231430 導電性膏。 其"人’準備Ρ型半導 述製作Μ# 板且對其上部網版印刷上 a取作之導電性膏 0 使該等试驗片於140C之烘箱内乾燥 刀鐘,繼而,伸用 電爐於800 C條件下進行1分鐘煅燒, 獲得於p型丰t 夕基板1上形成有鋁電極層5與BSF層6之 構造。 繼之,為分析鋁電極層5之與p型半導體矽基板〗之密接 性’而將背膠牽條(NICHIBAN公司製造)黏貼於銘電極層 5 ’以目視觀察評價剝離時鋁電極層5之剝落狀態。 其後,將形成有鋁電極層5之?型半導體矽基板丨浸潰於 氫氧化鈉水溶液中,藉由蝕刻鋁電極層5及BSF層ό而使p + 層7露出於表面,利用4探針式表面電阻測定器測定ρ+層7 之表面電阻。 (結果) 無紹低熔點玻璃組成及各試驗結果示於表中。 [表1] 實施例 1 2 3 4 5 玻璃組成(wt%) Si02 7.3 9.2 8.5 10.0 8.5 B2〇3 27.9 30.2 28.0 32.9 26.8 Ab〇3 1.2 ZnO 35.6 38.4 37.6 41.8 32.7 MgO 3.4 CaO 4.7 10.1 SrO 2.1 BaO 20.2 12.7 23.6 23.4 Li20 0.3 1.0 Na20 1.2 K20 4.4 4.8 1.9 4.0 5.5 161407.doc • 9- 201231430 熱膨脹係數(xl(T7/°C) 75 70 67 60 8? 軟化點ΓΟ 600 598 605 618 S80 P+層表面電阻值(Ω/口 20 18 26 17 14 接著強度 1 A A A A A [表2] 比較例 1 2 3 4 玻璃組成(wt%) Si02 12.4 4.6 8.5 4.0 B2O3 31.2 38.9 31.2 32.3 AI2O3 1.0 ZnO 45.5 37.3 32.8 38.9 MgO CaO 22.3 SrO BaO 6.5 6.0 Li20 ~~~1 Na20 1 6.4 7.5 3.8 K20 4.5 4.2 5 7 ις 〇 熱膨脹係數(xl(T7/°C) 78 86 85 X ^ *\J 軟化點(°c) 545 534 58〇 P+層表面電阻值(Ω/口 40 45 38 接著強度 B A c • 再者,於表1及2之接著強度之攔中,A表示接著強度良 好’ B表示接著強度尚且良好’ c表示接著強度不充分。 如表1中之實施例1〜5所示,於本發明之組成範圍内,軟 化點為550°C〜650。(:,且具有較佳之熱膨脹係數(55〜85)χ HT7厂C,與ρ型半導體矽基板1之密接性亦良好。進而,與 太陽電池元件之轉換效率相關之^層7之電阻值亦達到26 Ω/□下,可用作矽半導體太陽電池用導電性膏。 另一方面’偏離本發明之組成範圍之表2中之比較例1〜4 無法獲得與Ρ型半導體矽基板1良好之密接性,且p+層7之 161407.doc •10· 201231430 電阻值高,或者溶解後玻璃呈現潮解性等,而無法應用作 矽半導體太陽電池用導電性膏。 【圖式簡單說明】 圖1係普通之矽半導體太陽電池組電池之概略剖面圖。 【主要元件符號說明】 1 P型半導體矽基板 2 η型半導體矽層 3 防反射膜 4 表面電極 5 鋁電極層 6 BSF 層 7 Ρ+層 161407.doc
Claims (1)
- 201231430 七、申請專利範圍· 1. 一種導電性膏,其特徵在於:其係使用半導體矽基板之 太陽電池用f電性膏,且該導電性膏中所含之玻璃料之 組成實質上不包含船成分,且以質量%計包含: . 5〜15之 Si〇2、 20〜40之B2〇3 、 0〜10之 AI2O3、 30〜45之ZnO、 5~30之RO(選自由MgO、CaO、SrO、及BaO所組成之 群中之至少1種之合計)、及 0.1〜6之R20(選自由Li2〇、Na2〇、及κ2〇所組成之群中 之至少1種之合計)。 2. 如請求項1之導電性膏,其中上述玻璃料係3(rc〜3〇〇力 下之熱膨脹係數為(55〜85)χ1〇-7/°(:,且軟化點為550。(:以 上650°C以下。 3. 一種太陽電池元件’其特徵在於使用如請求項1或2之導 電性膏。 4. 一種電子材料用基板,其特徵在於使用如請求項1或2之 導電性膏。 161407.doc
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