TW201228842A

TW201228842A - Organic electro luminescence (EL) device and manufacturing method thereof

Info

Publication number: TW201228842A
Application number: TW100136438A
Authority: TW
Inventors: Yoshinobu Ono
Original assignee: Sumitomo Chemical Co
Priority date: 2010-10-08
Filing date: 2011-10-07
Publication date: 2012-07-16
Also published as: JP2012084306A; WO2012046736A1

Abstract

This invention is related to an organic EL device featuring a first film and an orgnic EL element provided on the first film. The organic EL element comprises a pair of electrodes, a emissive layer deposited between the electrodes and an electron injection layer deposited between the electrodes. The electron injection layer comprises ionic polymer. The first film includes a gas barrier layer having silicon atoms, oxygen atoms and carbon atoms. The silicon distribution curve, the oxygen distribution curve and the carbon distribution curve obtained from the gas barrier layer satisfy the following conditions: (i) In 90% or more of the region of the gas barrier layer in the thickness direction of the gas barrier layer, the ratio of silicon atom numbers is the sccond largest among the ratio of silicon atom numbers, the ratio of oxygen atom numbers and the ratio of carbon atom numbers, (ii) The above carbon distribution curve has at least one extremum value, and (iii) The difference of maximum value and minimum value of the ratio of the number of the carbon atom nubers in the above carbon distribution curve is over 5 atom% or more.

Description

201228842 六、發明說明：【發明所屬之技術領域】本發明係關於一種有機電激發光（EL)裝置及其製造方法。【先前技術】201228842 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an organic electroluminescence (EL) device and a method of manufacturing the same. [Prior Art]

有機電激發光（EL)元件具有複數薄膜積層之構成。藉由適當設定各薄膜的厚度、材料等，可賦予元件本身可撓性。如此的有機EL元件設置於撓性薄膜上之情況，裝載有機EL元件之裝置全體，可成為撓性裝置。有機EL元件會因暴露於外氣而劣化。特別是構成有機 EL元件的一部分之電子注入層，因大多是包含容易與氧氣及水反應之Li、Na之情況，更容易因暴露於外氣而劣化。所以，有機EL元件通常設置於氧氣、水料易透過之氣體阻隔性高之薄臈上。作為氣體阻隔性高之薄膜，提案有；化石夕、氮㈣、氧氮切及氧化料無機氧化物所構薄膜成膜於塑膠基材上所形成的薄作為無機減物所構成的薄職麟畴基材上之3 法，已知有真絲鍍法、濺鍍法、離子鑛積法⑽)、減壓化學氣相沈積：相Λ 化學氣相沈積法咖）。作為使用予乳相沈積法考隔性-之簿腺―的成膜方法之氣_ U冋之核’例如日本專婦開怀文獻1)，揭露且右藉爲0 a 规AiJU寻利默；揭路^、有積層2層以上之矽氡化的積層蒸賴層之薄膜。 “、、雌所I成另-方面’具有”積層之陶£系無機阻隔臈及聚合 323545 4 201228842 物膜之薄膜’揭露於日本專利特表2002-532850號（專利文獻2)。先前技術文獻專利文獻專利文獻1 :日本特開平4-89236號公報專利文獻2:日本特表2002-532850號公報【發明内容】 (發明所欲解決之課題）The organic electroluminescent (EL) element has a constitution of a plurality of thin film layers. The flexibility of the element itself can be imparted by appropriately setting the thickness, material, and the like of each film. When such an organic EL element is provided on a flexible film, the entire apparatus in which the organic EL element is mounted can be a flexible device. The organic EL element is deteriorated by exposure to external air. In particular, the electron injecting layer constituting a part of the organic EL element often contains Li or Na which are easily reacted with oxygen and water, and is more likely to be deteriorated by exposure to external air. Therefore, the organic EL element is usually disposed on a thin crucible having a high gas barrier property such as oxygen and water. As a film with high gas barrier properties, there is a proposal for thin film formed by thin film formed on a plastic substrate by a thin film of fossil eve, nitrogen (four), oxygen-nitrogen cut, and oxidized inorganic oxide. The three methods on the domain substrate are known as silk plating, sputtering, ion mineralization (10), and reduced pressure chemical vapor deposition: phase Λ chemical vapor deposition. As a film-forming method using the pre-milk phase deposition method - the film of the U-nucleus _ U冋's nucleus', for example, the Japanese woman's enthusiasm for the literature 1), exposes and right-handed as a rule AiJU seeks Limo; Uncovering the road, there is a film of two layers or more of the layered vaporized layer. ",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, CITATION LIST Patent Literature Patent Literature 1: Japanese Laid-Open Patent Publication No. Hei No. Hei-4-89236.

但是，專利文獻1記載的薄膜，氣體阻隔性不足，有被彎曲造成氣體阻隔性降低之問題。根據專利文獻2記載的薄膜，期待提高氣體阻隔性的同時，抑制因彎曲之氣體阻隔性的降低。但县一 X，辱利文獻 2記載的薄膜之製造步驟’有需要複雜且長的製造問題。 wb之本發明的目的’在於提供具備有機EL元件本構成其一部分之電子注入層不易劣化之有機幻_特别疋具備高氣體阻隔性同時薄膜彎曲時氣體阻隔性不久可用簡單的步驟在短時間形成之薄膜的有機El t降低且 (解決課題之手段）〜° 本發明係關於具備第1薄膜以及設置於第丄〆專f~乏有機EL元件之有機EL裝置。有機EL元件具右—、^ _ , —對電極、配置於前述電極間之發光層及配置於前述電核pq 间之^電子· 入層。電子注入層包含離子性聚合物。第1領崎喝具有合石々 (矽原子）、氧（氧原子）及碳（碳原子）之氣體 7 且1^層，對矽 323545 5 201228842 原子、氧原子及碳原子的合計量而言之矽原子的量（數）之比例（石夕原子比）、氧原子的量（數）之比例（氧原子比）及破原子的量（數）之比例（碳原子比），與離前述氣體眼隔層的厚度方向（膜厚方向）之前述氣體_層的—侧表面之距離的關係所分別表示之發分佈曲線、氧分佈曲線及破分佈曲線，滿足下述條件： ⑴於前述氣體阻隔層的厚度方向（膜厚方向）的9誠以上However, the film described in Patent Document 1 has a problem that the gas barrier property is insufficient and the gas barrier property is lowered due to bending. According to the film described in Patent Document 2, it is expected to improve the gas barrier properties and suppress the decrease in gas barrier properties due to bending. However, there is a need for complicated and long manufacturing problems in the manufacturing steps of the film described in the case of the county. The purpose of the present invention of wb is to provide an organic illusion that the electron injection layer having a part of the organic EL element is not easily deteriorated. In particular, the gas barrier property is high, and the gas barrier property is shortly formed in a short time by a simple step. The organic EL of the film is lowered and the problem is solved. The present invention relates to an organic EL device including a first film and a second organic electrode. The organic EL element has a right-side, a _, a counter electrode, a light-emitting layer disposed between the electrodes, and an electron-input layer disposed between the electrodes pq. The electron injecting layer contains an ionic polymer. The first 1st collar is drinking a gas 7 and 1 layer of Hexa (々 atom), oxygen (oxygen atom) and carbon (carbon atom), for the total amount of 矽323545 5 201228842 atoms, oxygen atoms and carbon atoms The ratio of the amount (number of atoms) of the atom (the ratio of the atomic number of the atom) to the amount (number of oxygen atoms) (the ratio of the oxygen atom) and the amount of the atom (the number of atoms) (the ratio of carbon atoms), and the above The distribution curve, the oxygen distribution curve, and the broken distribution curve respectively indicating the relationship between the distances of the gas-layer side surfaces in the thickness direction (film thickness direction) of the gas eye barrier satisfy the following conditions: (1) The gas described above 9 thickness or more in the thickness direction (film thickness direction) of the barrier layer

的區域’㈣子數的比例、氧原子數的比例及破原子數的比例中，秒原子數的比例為帛2a_; ㈤前述碳分佈曲線具有至少1個極值；以及 (111)前述碳分佈曲線之碳原子數的比例比的最大值與最小值的差（絕對值）為5原子％(at%)或以上。且 ,、明係關於有機el裝置的製造方法，該刀办二:對電極、配置於前述電極間之發光層及配二刖…日且包含離子性化合物之電子注人層之有機 EL元件的步驟；形成另士體阻隔層的第^::夕原子、氧原子及碳原子之氣間以配置前述有機使前述第1薄膜與第2薄膜述第2薄叙_。=的方式’料料第1薄膜與前原子的合計量而^ ·隔層’㈣原子、氧原子及碳、〇之矽原子數之比例、氧原子數之μ·/ 碳原子數之__前1髓阻㈣的# 列及體阻隔層的，表面之距離的襲所^述氣線、氧分佈曲線及後分佈曲線，滿U述^切分佈曲 ⑴於前述氣體阻隔層的厚廑方向（膜厚方向）的_或以上 323545 6 201228842 的區f ’㈣子數的比例、氧原子數的比例及碳原子數的比例中，矽原子數的比例為第2大的值； (11)前述碳分佈曲線具有至少丨個極值；以及 (UO前述碳分佈#線之破原子數的比例比的最大值與最小值的差（絕對值）為5原子％(at%)或以上。 (發明的效果）根據本發明，藉由設置含有離子性聚合物的電子注入層可實現具備因外氣的劣化被抑制之有機el元件以及具備高氣體阻隔性’同時薄膜f曲時氣體阻隔性不易降低且可用簡單的步驟在短時間形成之薄膜的有機EL裝置。【實施方式】 < 以下，詳細說明本發明的較佳實施態樣。但是，本發明不限定於以下的實施態樣。關於本實施態樣之有機EL裝置，具備第i薄膜以及設置於第1薄膜上之有機EL元件。有機EL元件，具有一對電極、配置於前述電_之發光層及配置於前述電極間之電子注入層。電子注人層包含離子性聚合物。f丨薄膜具有含發原子、氧原子及碳原子之氣體阻隔層。有機EL裝置’通常具備支持基板以及設置於支持基板 =有機EL元件。有機EL裝置，更具備與支持基板貼合構件’使有機EL元件存在於密封構件與支持基板之《二關於本實施態樣之有機豇裝置的第！薄膜，可使用作為》又有有機虹元件的支持基板，亦可使用作為與支持基板貼合之密封構件。以下，說明更具備第2薄膜作為支持基 323545 7 201228842 板’第1薄膜設置作為密封構件的形態之有機EL裝置。裝載於有機EL裝置之有機EL元件，大致上分為以下 3型的元件《亦即，有機el元件大致上分為（I)朝裝載該有機EL元件的支持基材射出光，亦即底發光型元件，（η) 朝與支持基材相反側射出光，亦即頂發光型元件，（IΗ) 朝支持基材射出光，同時朝與支持基材相反侧射出光之兩面發光型元件。關於本實施態樣之裴載於有機EL裝置之有 • 機EL元件，可為任一型的元件。以下，作為一例，參照第 1圖’說明設有頂發光型元件之有機EL裝置，然後參照第 2圖’說明設有底發光型元件之有機EL裝置。第1圖為表示關於一實施態樣的有機EL裝置之典型剖面圖。第1圖所示的有機EL裝置13,於第2薄膜1上，裝載有機EL元件2。第1薄膜11’隔著有機el元件2，配置於第2薄膜1上，與第2薄膜1 一起密封有機EL元件 2。第1薄膜11與第2薄膜1 ’隔著接著層4而貼合。而 • 且，有機乩元件2，依據需要’可藉由保護層3覆蓋。藉由設置該保護層3,可隔開接著層4而保護有機El元件2。第1圖所示的有機EL元件2為頂發光型元件，朝第1 溥膜11射出光。因此，第1薄膜必須由透過光的構件所形成。另一方面，於本實施態樣，相當於支持基材的第2薄膜1，可由不透過光的不透明構件所形成。作為第2薄膜1 ’可使用塑膠薄膜或金屬薄膜，較理想為金屬薄膜。金屬薄膜，與塑膠薄膜比較時因具有高氣體阻隔性’可提高有機EL裝置的氣體阻隔性。作為金屬薄 323545 8 201228842 膜’例如可使用A1、Cu及Fe的薄板，以及不鏽鋼等合金薄板。第1薄膜11 ’具有含矽原子、氧原子及碳原子之氣體阻隔層5。於本實施態樣，第1薄膜η係由基材6以及設置於基材6的有機EL元件2側的主面上之氣體阻隔層5所構成。氣體阻隔層5，藉由滿足後述的條件（i)、（π)及 (iii)，具備高氣體阻隔性，進而可抑制彎曲時氣體阻隔性的降低。 ® 藉由如此的第1薄膜11與第2薄膜1密封有機EL元件2’可實現撓性的兼具充分耐久性及氣體阻隔性之有機 EL裝置。特別是使用金屬薄膜作為第2薄膜1的情況，因第1薄膜11與第2薄膜1兩者皆顯示高氣體阻隔性，可實現兼具更高耐久性及氣體阻隔性之有機EL裝置。關於本實施態樣的有機EL元件，具備包含離子性聚合· 物之電子注入層。如後述，關於本實施態樣的電子注入層， • 因包含離子性聚合物，與包含Li、Na的傳統電子注入層比較，不易因外氣而劣化。關於本實施態樣的有機EL元件，藉由上述氣體阻隔性高之第1薄膜U與第2薄膜1密封，可實現更難因外氣而劣化之有機EL裝置13。具備包含離子性聚合物之電子注入層之有機EL元件，因在大氣中亦安定，在大氣中的劣化極緩慢地進行。因此，傳統的有機EL元件，不一定需要形成保護臈，可減少有機EL元件的製造步驟數目。關於本實施態樣的有機EL元件，因直至密封步驟纟士束 323545 9 201228842 ==驟(運送步驟及密封步驟)即使在大氣令進行，也牛驟您’賴傳統在^巾或惰性氣體環境+進行密封乂驟’密封步射在大氣巾進行，無需到真空令或惰性氣體環境之大型複雜的製造裝置。特別是 ==滾輪的方法貼合第1薄膜與第2薄膜的情況疋：要大型複雜的製造設備’用以將連續貼合裝置等的、置放置於真空環境下或惰性氣體環境下。另一方 =，關於本實施態樣的有機EL裝置，無需如此的製造設備，可用極單純的製造設備，製造有機EL裝置。第2圖為表示關於其他實施態樣的有機el裝置u之典型剖面圖。第2圖所示的有機EL裝置13，與第i圖所不的實施態樣之有機EL元件2以及第2薄膜夏不同。本實 2態樣的有機EL元件2為紐光型元件射出光。因此，第2薄膜1必須為= 透過性的薄膜。In the ratio of the (4) sub-number, the ratio of the number of oxygen atoms, and the ratio of the number of broken atoms, the ratio of the number of seconds atoms is 帛2a_; (5) the carbon distribution curve has at least one extreme value; and (111) the carbon distribution The difference (absolute value) between the maximum value and the minimum value of the ratio of the carbon atoms of the curve is 5 atom% (at%) or more. Further, the method for manufacturing an organic EL device is a counter electrode, a light-emitting layer disposed between the electrodes, and an organic EL device including an electron-injecting layer of an ionic compound. a step of forming a second layer of the first film and the second film with the organic material disposed between the gas of the other side of the barrier layer of the guest body, the oxygen atom, and the carbon atom. = the way 'the total amount of the first film and the former atom of the material ^ ^ · The ratio of the compartment '(4) atoms, oxygen atoms and carbon, the number of atoms in the ruthenium, the number of oxygen atoms, μ / / the number of carbon atoms __ In the #1 column of the first 1 medullary obstruction (4) and the body barrier layer, the surface distance is measured by the gas line, the oxygen distribution curve and the post-distribution curve, and the full-disclosed distribution curve (1) is in the thickness direction of the gas barrier layer. (in the film thickness direction) _ or above 323545 6 201228842 The ratio of the area f '(four) sub-number, the ratio of the number of oxygen atoms, and the ratio of the number of carbon atoms, the ratio of the number of germanium atoms is the second largest value; (11) The carbon distribution curve has at least one extreme value; and (the difference (absolute value) between the maximum value and the minimum value of the ratio of the number of broken atoms in the carbon distribution # line of UO is 5 atom% (at%) or more. Advantageous Effects of Invention According to the present invention, it is possible to realize an organic EL element which is suppressed by deterioration of external air and a high gas barrier property by providing an electron injecting layer containing an ionic polymer. Reduced and can be formed in a short time by a simple film [Embodiment] The preferred embodiment of the present invention will be described in detail below. However, the present invention is not limited to the following embodiments. The organic EL device of the present embodiment includes an ith film. And an organic EL device provided on the first thin film, the organic EL device having a pair of electrodes, an emission layer disposed on the electric light, and an electron injection layer disposed between the electrodes. The electron injecting layer contains an ionic polymer. The f丨 film has a gas barrier layer containing a hair atom, an oxygen atom, and a carbon atom. The organic EL device generally includes a support substrate and a support substrate = an organic EL device. The organic EL device further includes a bonding member with the support substrate. The organic EL element is present in the sealing member and the support substrate, and the second substrate of the organic germanium device of the present embodiment can be used as a support substrate having an organic rainbow element, and can also be used as a support substrate. Sealing member. Hereinafter, the second film is further provided as a supporting group 323545 7 201228842 The first film is provided as a sealing member. The organic EL device mounted on the organic EL device is roughly classified into the following three types of elements: that is, the organic EL element is roughly divided into (I) light emitted from a support substrate on which the organic EL element is mounted, The bottom light-emitting element, (η) emits light toward the side opposite to the support substrate, that is, the top-emission type element, (I) emits light toward the support substrate, and emits light toward the opposite side of the support substrate. In the present embodiment, the EL element to be mounted on the organic EL device may be any type of element. Hereinafter, an organic EL device having a top emission type element will be described with reference to FIG. 1 as an example. Then, an organic EL device provided with a bottom emission type element will be described with reference to Fig. 2'. Fig. 1 is a typical cross-sectional view showing an organic EL device according to an embodiment. In the organic EL device 13 shown in Fig. 1, the organic EL element 2 is mounted on the second film 1. The first film 11' is placed on the second film 1 via the organic EL element 2, and the organic EL element 2 is sealed together with the second film 1. The first film 11 and the second film 1' are bonded together via the adhesive layer 4. And, the organic germanium element 2 can be covered by the protective layer 3 as needed. By providing the protective layer 3, the organic EL element 2 can be protected by separating the adhesive layer 4. The organic EL element 2 shown in Fig. 1 is a top emission type element, and emits light toward the first meandering film 11. Therefore, the first film must be formed by a member that transmits light. On the other hand, in the present embodiment, the second film 1 corresponding to the supporting substrate can be formed of an opaque member that does not transmit light. As the second film 1 ', a plastic film or a metal film can be used, which is preferable as a metal film. The metal film has a high gas barrier property when compared with a plastic film, and the gas barrier property of the organic EL device can be improved. As the thin metal 323545 8 201228842, for example, a thin plate of A1, Cu, and Fe, and an alloy thin plate such as stainless steel can be used. The first film 11' has a gas barrier layer 5 containing a halogen atom, an oxygen atom and a carbon atom. In the present embodiment, the first film η is composed of the substrate 6 and the gas barrier layer 5 provided on the main surface of the substrate 6 on the side of the organic EL element 2. The gas barrier layer 5 has high gas barrier properties by satisfying the conditions (i), (π), and (iii) to be described later, and further suppresses deterioration of gas barrier properties during bending. By sealing the organic EL element 2' between the first film 11 and the second film 1 as described above, an organic EL device having sufficient durability and gas barrier properties can be realized. In particular, when a metal thin film is used as the second thin film 1, both the first thin film 11 and the second thin film 1 exhibit high gas barrier properties, and an organic EL device having higher durability and gas barrier properties can be realized. The organic EL device of the present embodiment includes an electron injecting layer containing an ionic polymer. As will be described later, the electron injecting layer of the present embodiment is more likely to be deteriorated by the external air than the conventional electron injecting layer containing Li or Na because it contains an ionic polymer. In the organic EL device of the present embodiment, the first thin film U having the high gas barrier property and the second thin film 1 are sealed, whereby the organic EL device 13 which is more difficult to be deteriorated by the outside air can be realized. An organic EL element having an electron injecting layer containing an ionic polymer is stabilized in the atmosphere, and deterioration in the atmosphere is extremely slow. Therefore, the conventional organic EL element does not necessarily need to form a protective layer, and the number of manufacturing steps of the organic EL element can be reduced. Regarding the organic EL element of the present embodiment, since the sealing step gentleman beam 323545 9 201228842 == step (transporting step and sealing step) even if it is carried out in the atmosphere, it is a matter of tradition or in an inert gas atmosphere. + Performing a sealing step 'The sealing step is carried out on an air towel, without the need for a large and complex manufacturing device in a vacuum or inert gas environment. In particular, the method of the == roller is applied to the first film and the second film. 大型: A large-scale and complicated manufacturing facility is used to place a continuous bonding device or the like in a vacuum environment or an inert gas atmosphere. On the other hand, in the organic EL device of the present embodiment, it is not necessary to manufacture such an apparatus, and an organic EL device can be manufactured by using a very simple manufacturing facility. Fig. 2 is a typical cross-sectional view showing an organic EL device u according to another embodiment. The organic EL device 13 shown in Fig. 2 is different from the organic EL device 2 and the second film in the embodiment of Fig. i. The organic EL element 2 of the second embodiment is a neon type element that emits light. Therefore, the second film 1 must be a film having a transparent property.

本實施態樣的第2薄膜！只要是顯示光透過性的薄膜’無特別關，從氣體阻隔性的觀點，與第i薄膜具有切原子、氧原子及碳原子之第2氣體阻隔層 8較理想。於本實施態m薄膜〗係由基材7以及設置於基材7的有機EL树2側的主面上之第2氣體阻隔層 8所構成。該第2氣體阻隔層8，與第！薄膜n的氣體阻隔層5同樣地，藉由滿足後述的條件⑴、⑴）及⑴^，具備高氣體阻隔性，進而可抑制f曲時氣體阻隔性的降低。藉由如此的第1薄膜U與第2薄膜1密封有機EL元 323545 10 201228842 件2,可實現撓性的兼具充分耐久性及氣體阻隔性之 EL裝置。包含離子性聚合物之有機EL元伴，因在大氣中亦安定，與前述實施態樣同樣地，可用極單純的製造設備，製造有機EL元件。於第2圖所示的有機EL裝置，亦可設置兩面發光型有機EL元件，取代底發光型有機EL元件。使用第2薄膜作為密封構件，使用具有氣體阻隔層之第1薄膜作為支持基材，可藉由該第丨薄膜與第2薄膜密封有機EL元件。 ' 例如，於第1圖及第2圖所示的實施態樣，對第2薄膜及/或帛1薄膜，可再貼合附加的薄膜。作為附加的薄膜，例如保護有機EL裝置的表面之保護膜、防止射入有機 EL裝置的外光反射的抗反射膜、具有提高絲出效率的作用之光取出膜、調整光的相位及偏光用的光學功能性薄膜’以及具有選自該些之複數薄膜積層所構成的光學膜等。附加的薄膜可貼合於第2 _及/或第丨薄膜的單面或兩面。第13圖表示關於其他實施態樣的有機乩裝置之剖面圖。第13圖所不的有機EL裝置，以第1薄膜作為支持基材’於第1薄膜上設置有機EL元件2。本實施態樣，為有機EL裝置不具備第2薄膜的態樣。 (接著層）接著層4係將第i薄膜與第2薄膜，在其間配置有機 323545 11 201228842 EL元件的狀態下接合的層。接著層4所使用的接著劑，具有高氣體阻隔性較理想。如第1圖所示，從有機EL元件2 射出的光通過接著層4朝外界射出之有機EL裝置，接著層 4的光透過率高較理想。於該情況，從光取出效率的觀點，與接著層4相接的層，其與接著層4的折射率之差的絕對值小較理想。作為可利用於接著層之接著劑，適合為熱硬化性接著劑及光硬化性接著劑等硬化性接著劑。 ® 作為熱硬化性接著劑，可列舉環氧系接著劑及丙烯酸酯系接著劑等。作為環氧系接著劑，例如可列舉包含選自雙酚A型環氧樹脂、雙酚F型環氧樹脂及苯氧樹脂之環氧化合物之接著劑。作為丙烯酸酯系接著劑，例如可列舉包含選自丙烯酸、曱基丙烯酸、丙烯酸乙醋、丙烯酸丁自旨、丙婦酸2-己 φ 酯、丙烯醯胺、丙烯腈及羥基丙烯酸酯等為主成分的單體以及可與該主成分共聚合之單體的接著劑。作為光硬化性接著劑，可列舉自由基系接著劑及陽離子系接著劑等。作為自由基系接著劑，可列舉包含環氧丙烯酸酯、酯丙烯酸酯及酯丙烯酸酯等接著劑。作為陽離子系接著劑，可列舉包含環氧系樹脂、乙烯醚系樹脂等接著劑。 (保護層） 12 323545 201228842 保護層係設置成為覆盖有機EL元件之方式。错由設置該保護層，可保護有機EL元件不接觸接著層。構成有機EL元件的電子注入層及陰極，因通常包含在大氣中不安定的材料作為主成分，有機EL元件形成後，貼合第1薄膜，到密封該有機EL元件為止之間，電子注入層及陰極恐會因環境中的水分及氧氣等而劣化。因此，保護層，藉由第1薄膜，直到該有機EL元件密封為止之間，遮斷環境中的水分及氧氣等，具有保護有機EL元件的功能較理想。作為保護層所使用的材料，例如在大氣中安定的金屬材料、阻隔性佳之無機絕緣性材料及有機絕緣性材料等。金屬材料例如可從Al、Cu、Ag、Au、Pt、Ti、Cr、Co及 Ni選擇。無機絕緣性材料例如可從Si〇2、SiN、SiOxNy及 Si〇xCy選擇。作為有機絕緣性材料，可使用聚對二曱苯 (parylene)等。由金屬材料形成的保護層，例如可藉由真空蒸鍍法、濺鍍法或電鍍法形成。由無機絕緣性材料形成的保護層，例如可藉由濺鍍法、CVD法（化學氣相沈積法）或雷射剝蝕法（laser ablation)形成。由有機絕緣性材料形成的保護層，例如可藉由包含單體氣體的真空蒸鍍以及包含單體的蒸鍍膜（被包覆表面）的聚合之製膜法形成。 (有機EL裝置的製造方法）以下，參照第3圖，說明有機EL裝置的製造方法。於本實施態樣的有機EL裝置的製造方法，準備主面上 13 323545 201228842 形成有有機EL元件之第2薄膜1。第2薄膜1 ’係在有機 EL元件形成於主面上後，與有機EL元件一起捲成捲筒狀，在捲取的狀態下保管。捲取的第2薄膜1以及有機EL元件’例如在真空中、惰性氣體環境中或大氣環境中保管。其中，在惰性氣體環境中或大氣環境中保管較理想，在大氣環境中保管更理想。關於本實施態樣的有機EL元件’因如前述之因大氣之劣化緩慢進行，捲取的第2薄膜1以及有機EL元件可在大氣環境中保管。於捲取的第2薄膜1以及有機EL元件在大氣環境中保管之情況，製作有機EL裝置用的裝置不複雜，可用簡單的步驟製造有機EL裝置。於本實施態樣’說明在第2薄膜1的主面上預先形成有機EL元件之薄膜’與第1薄膜貼合之形態。於其他實施態樣’亦可在第1薄膜的主面上預先形成有機EL元件之薄膜’與第2薄膜貼合。第3圖為表示製造有機EL裝置的裝置之一實施態樣的 # 概略示意圖。於第3圖所示的裝置，第2薄膜1與第1薄膜11貼合，再將附加的薄膜82〇貼合於第丨薄膜u。於第2薄膜1上，預先形成有機EL元件。捲出滾輪500係送出有機EL元件預先形成於其上之第 2薄膜1。捲出滚輪510係送出第i薄膜u。從捲出滾輪 500达出的第2薄膜1上，藉由第i接著層用的塗佈裝置 610 ’塗佈接著劑’形成第i接著層。然後，第丄薄膜“ 與前述第2薄膜1 ’在其間配置有機此元件的狀態下，藉由將其通過2個滚輪（第1貼合滚輪⑴、⑽之間，經過 323545 201228842 運达滾輪513，供給的帛1薄膜11以及第2薄膜1隔著第 1接著層貼合’再藉由第1接著層用的硬化裝置611，使第 1接著層硬化（固化）。於第1薄膜11上，藉由設置於硬化裝置611的下游之第2接著層用塗佈裝置610，塗佈接著劑，再形成第2接著層。接著，藉由第2貼合滾輪52卜522，第1薄膜u 與從捲出滾輪520捲出經由運送滾輪523供給的附加的薄膜820’隔著第2接著層貼合，再藉由第2接著層用硬化裝置621 ’使第2接著層硬化（固化）。然後，所形成的有機EL裝置’藉由捲取滾輪530捲取。上述貼合步驟，例如可在真空中、惰性氣體環境中或大氣環境中進行。其中，惰性氣體環境中或大氣環境中較理想，大氣環境中更理想。關於本實施態樣之有機EL元件，如前述之因大氣之劣化緩慢產生，可在大氣環境中進行貼合步驟。於大氣環境中進行貼合步驟的情況，製作有機EL裝置用的裝置不複雜，可用簡單的步驟製造有機此裝置。第1薄膜11與第2薄膜1貼合所形成之有機EL裝置，藉由捲取滾輪530捲取。捲取的有機此裝置，例如可在真空中、惰性氣體環境中或大氣環境中保管。其中，在惰性氣體環境中或大氣環境中保管較理想，在大氣環境中保管更理想。關於本實施態樣之有機EL元件，如前述之因大氣之劣化緩慢產生，且藉由氣體阻隔性高的第丨薄膜u與第 2薄膜1密封，捲取的有機EL裝置可在大氣中保管。於捲 323545 15 201228842 取的有機EL裝置在大氣中保管的情況，製作有機乩裝置用的裝置不複雜’可用簡單的步驟製造有機EL裝置。於本實施態樣，主面上形成有有機EL元件之第2薄膜，一旦被捲取保管，不限於如此的形態，於第2薄膜的主面上形成有機EL元件後，可不捲取第2薄膜，而與第ι 溥膜貼合。作為附加的薄膜，可使用例如前述的薄膜。於本實施態樣，雖然貼合1片附加的薄膜，可依序貼合2片以上的附加的薄膜。於貼合3片以上的附加的薄膜之情況，貼合的順序可依據有機EL裝置的積層順序而適當改變。 (第1薄膜）接著’說明第1薄膜i卜本實施態樣的有機乩裝置之一特徵，為第1薄膜，特別是其氣體阻隔層5。以下，首先說明第1薄膜的氣體阻隔層5。第1薄膜具有含石夕原子、氧原子及碳原子之氣體阻隔籲層。藉由-邊改變離氣體阻隔層的厚度方向（膜厚方向）之前述氣體阻隔層的-側的表面之距離，測定對石夕原子、氧原子及%ι原子的合计量而言之矽原子數之比例(矽原子比）、氧原子數之比例（氧原子比）及碳原子數之比例（碳源子比），可得到分別表示各原子比與離氣體阻隔層表面之距離的關係之石夕分佈曲線、氧分佈曲線及碳分佈曲線。從關於本實施態樣之氣體阻隔層所得的該些曲線，滿足下述條件（ι) 、（ii)及（iii)。 ⑴於前述氣體阻隔相厚度方㈣_或以上的區域，石夕 323545 201228842 原子比、氧原子比及碳原子比中，矽原子比為第2大的值。 (ii) 前述碳分佈曲線具有至少1個極值。 (iii) 前述碳分佈曲線之碳原子比的最大值與最小值的差 (絕對值）為5at%或以上。 (i)的條件，換言之’係指於氣體阻隔層的厚度方向的 90%以上的區域，滿足下述式（1)或下述式（2)。 (氧原子比）>(矽原子比）>(碳原子比）...（1) φ (碳原子比）>(矽原子比）>(氧原子比）...（2) 〈第1薄膜的基材〉上述氣體阻隔層，通常形成於基材上。亦即，第1薄膜包含基材以及形成於該基材上之氣體阻隔層。作為第i 薄膜的基材，可列舉無色透明的樹脂薄膜或樹脂薄片。如此的基材所使用的樹脂，例如選自聚對苯二曱酸乙二醋 (pET)、聚萘二甲酸乙二酯（PEN)等聚酯系樹脂；聚乙稀 (PE)、聚丙烯（pp)及環狀聚烯烴等聚烯烴系樹脂；聚酿胺 # 系樹脂；聚碳酸酯系樹脂；聚苯乙烯系樹脂；聚乙烯醇系樹脂；乙烯-乙酸乙烯酯共聚物的皂化物；聚丙烯腈系樹月曰，縮酸·系樹脂；以及聚酿亞胺系樹脂。該些樹脂令，從耐熱性高、線膨脹率小、製造成本低之觀點，較理想為聚酿系樹脂及聚烯烴系樹脂，PET及PEN更理想。該些樹脂可1種單獨使用，亦可組合2種以上使用。第1薄膜的基材之厚度，考慮製造第1薄膜時的安定性’可適當設定。作為第1薄膜的基材之厚度，從真空中亦可運送薄膜之觀點，較理想為5至50；απι的範圍。於藉 17 323545 201228842 由電衆CVD法形成氣體阻隔層之情況，由於通過第i薄膜的基材放電的同時，形成氣體阻隔層，第i薄膜的基材之厚度為50至200 /zm更理想，5〇至1〇〇_更加理相。對第1薄膜的基材，從後述與氣體阻隔層的^ 著性之觀點’實施為了洗淨表面之表面活性處理較理想。作為如此的表面活性處理，例如電暈處理、電漿處理及火焰處理。〈氣體阻隔層〉關於本實施態樣的氣體阻隔層，形成於上述基材的至少單面上。關於本實施態樣的第丨薄膜，具備至少一層之含有矽原子、氧原子及碳原子、且完全滿足上述條件（i)、 (ii)及（iii)之氟體阻隔層即可。例如第1薄膜亦可具有不滿足上述條件（i)、（ii)及（iii)的至少一者的其他層。氣體阻隔層或其他層，可更含有氮原子及鋁原子等。於矽原子比、氧原子比及碳原子比不滿足條件（丨）的情況，氣體阻隔層的氣體阻隔性降低。滿足上述式（1)或（2) 之區域’佔氣體阻隔層的厚度之90%或以上較理想。該比例更理想為95%或以上，更加理想為1〇〇%。於關於本實施態樣的氣體阻隔層，作為上述條件 (i i)’必須碳分佈曲線具有至少1個極值。於如此的氣體阻隔層，碳分佈曲線具有2個極值更理想，具有3個以上的極值更加理想。於碳分佈曲線不具有極值的情況，彎曲第1薄膜時，氣體阻隔層的氣體阻隔性降低。於碳分佈曲線至少具有3個極值之情況，碳分佈曲線的鄰接的極值間的厚度方向之距離為200ηιη以下較理想，i〇〇nm以下更理 323545 18 201228842 想。於本說明書’所謂極值，係指元素的原子比對離氣體阻隔層的厚度方向之氣體阻隔層的表面之距離作圖所得的上述分佈曲線之極大值或極小值。所謂極大值，係指上述分佈曲線中，伴隨從氣體阻隔層的表面之距離變化，元素的原子比的值從增加變為減少的點，且與該點之元素的原子比之值比較，由賴從氣體阻㈣的厚度方向之氣體阻隔層的表面之距離再變化2〇nm之位置的元素的原子比之值減少3at%以上的點之元素的原子比。所謂極小值，係指伴隨從氣體阻隔層的表面之距離變化，元素的原子比的值從減少變為增加的點，且與該點之元素的原子比之值比較，由該點從氣體阻隔層的厚度方向之氣體阻隔層的表面之距離再變化20nm之位置的元素的原子比之值增加3at% 以上的點之元素的原子比。關於本實施態樣的氣體阻隔層，作為上述條件（1丨丨）， •必須碳分佈曲線之碳原子比的最大值與最小值的差（絕對值）為5at%或以上。於如此的氣體阻隔層，碳原子比的最大值與最小值的差為6at%或以上較理想，7at%或以上更理想。於該差未達5at%，彎曲第】薄膜時，氣體阻隔層的氣體阻隔性降低。該差的上限，無特別限制，通常為左右。 (氧分佈曲線、極值）氣體阻隔層的氧分佈曲線，具有至少1個極值較理想，具有至少2個極值更理想，具有至少3個極值更加理 323545 19 201228842 ·' :氧刀佈曲線具有極值的情況，彎曲第1薄膜時，氣 ^阻隔層產生氣體阻隔性之降低有困難的傾向。於氣體阻戶j具的氧刀佈曲線具有至少3個極值的情況，氧分佈曲線所具有之一極值與鄰接該極值之間，分別離氣體阻隔層的向之氣體阻隔層的表面之距離之差，任一者皆為想’ lGGmn以下更理想。 ^氧分佈曲線、最大值與最小值的差）The second film of this embodiment! As long as the film exhibiting light transmittance is not particularly closed, it is preferable from the viewpoint of gas barrier properties that the second film barrier layer 8 having an atom, an oxygen atom and a carbon atom in the i-th film is preferable. In the present embodiment, the m film is composed of a substrate 7 and a second gas barrier layer 8 provided on the main surface of the substrate 7 on the side of the organic EL tree 2. The second gas barrier layer 8, and the first! Similarly, the gas barrier layer 5 of the film n has high gas barrier properties by satisfying the conditions (1), (1), and (1) described below, and further suppresses deterioration of gas barrier properties at the time of f-curve. By sealing the organic EL element 323545 10 201228842 2 between the first film U and the second film 1, the flexible EL device having both sufficient durability and gas barrier properties can be realized. The organic EL element containing the ionic polymer is also stabilized in the atmosphere, and the organic EL device can be produced by a very simple manufacturing apparatus in the same manner as in the above embodiment. In the organic EL device shown in Fig. 2, a double-sided emission type organic EL element may be provided instead of the bottom emission type organic EL element. The second film is used as the sealing member, and the first film having the gas barrier layer is used as the supporting substrate, and the organic EL element can be sealed by the second film and the second film. For example, in the embodiment shown in Figs. 1 and 2, an additional film can be attached to the second film and/or the 帛1 film. As an additional film, for example, a protective film for protecting the surface of the organic EL device, an antireflection film for preventing reflection of external light incident on the organic EL device, a light extraction film having an effect of improving the efficiency of the wire discharge, and a phase for adjusting the light and polarization. The optical functional film 'and an optical film composed of a plurality of thin film laminates selected from the above. The additional film can be applied to one or both sides of the second and/or second film. Fig. 13 is a sectional view showing an organic tantalum apparatus according to another embodiment. In the organic EL device which is not shown in Fig. 13, the organic EL element 2 is provided on the first film by using the first film as a supporting substrate. In this embodiment, the organic EL device does not have the second film. (Next layer) Next, the layer 4 is a layer in which the i-th film and the second film are bonded together with the organic 323545 11 201228842 EL element interposed therebetween. The adhesive used in layer 4 is then preferred to have high gas barrier properties. As shown in Fig. 1, the light emitted from the organic EL element 2 passes through the organic EL device which is emitted to the outside through the bonding layer 4, and the light transmittance of the layer 4 is preferably high. In this case, from the viewpoint of light extraction efficiency, the absolute value of the difference between the refractive index of the layer adjacent to the adhesion layer 4 and the adhesion layer 4 is preferably small. As the adhesive which can be used for the adhesive layer, a curable adhesive such as a thermosetting adhesive or a photocurable adhesive is suitable. ® Examples of the thermosetting adhesive include an epoxy-based adhesive and an acrylate-based adhesive. The epoxy-based adhesive agent may, for example, be an adhesive comprising an epoxy compound selected from the group consisting of a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, and a phenoxy resin. Examples of the acrylate-based adhesive include those selected from the group consisting of acrylic acid, mercaptoacrylic acid, ethyl acrylate, butyl acrylate, 2-hexyl acrylate, acrylamide, acrylonitrile, and hydroxy acrylate. a monomer of the component and an adhesive of a monomer copolymerizable with the main component. Examples of the photocurable adhesive include a radical-based adhesive, a cationic adhesive, and the like. Examples of the radical-based adhesive include an adhesive such as an epoxy acrylate, an ester acrylate, and an ester acrylate. The cation-based adhesive includes an adhesive such as an epoxy resin or a vinyl ether resin. (Protective layer) 12 323545 201228842 The protective layer is set to cover the organic EL element. The protective layer is provided to protect the organic EL element from contacting the adhesive layer. The electron injecting layer and the cathode constituting the organic EL element have a material which is unstable in the atmosphere as a main component, and after the organic EL element is formed, the first thin film is bonded, and the electron injecting layer is sealed between the organic EL element and the electron injecting layer. The cathode may be deteriorated by moisture, oxygen, etc. in the environment. Therefore, the protective layer has a function of protecting the organic EL element by blocking moisture, oxygen, and the like in the environment between the first thin film and the organic EL element. The material used for the protective layer is, for example, a metal material which is stable in the atmosphere, an inorganic insulating material which is excellent in barrier properties, and an organic insulating material. The metal material can be selected, for example, from Al, Cu, Ag, Au, Pt, Ti, Cr, Co, and Ni. The inorganic insulating material can be selected, for example, from Si〇2, SiN, SiOxNy, and Si〇xCy. As the organic insulating material, parylene or the like can be used. The protective layer formed of a metal material can be formed, for example, by a vacuum evaporation method, a sputtering method, or a plating method. The protective layer formed of an inorganic insulating material can be formed, for example, by a sputtering method, a CVD method (chemical vapor deposition method) or a laser ablation method. The protective layer formed of an organic insulating material can be formed, for example, by a vacuum deposition method including a monomer gas and a film formation method including polymerization of a vapor-deposited film (coated surface) of a monomer. (Manufacturing Method of Organic EL Device) Hereinafter, a method of manufacturing the organic EL device will be described with reference to FIG. In the method for producing an organic EL device of the present embodiment, the second thin film 1 on which the organic EL element is formed is prepared on the main surface 13 323545 201228842. After the organic EL element is formed on the main surface, the second thin film 1' is wound into a roll shape together with the organic EL element, and is stored in a wound state. The wound second film 1 and the organic EL element ' are stored, for example, in a vacuum, in an inert gas atmosphere, or in an atmospheric environment. Among them, it is preferable to store in an inert gas atmosphere or in an atmospheric environment, and it is preferable to store it in an atmospheric environment. In the organic EL device of the present embodiment, the second film 1 and the organic EL device that are wound up can be stored in an air atmosphere because the deterioration of the atmosphere is progressing as described above. In the case where the second film 1 to be wound up and the organic EL element are stored in the atmosphere, the apparatus for producing the organic EL device is not complicated, and the organic EL device can be manufactured by a simple procedure. In the present embodiment, a mode in which the film of the organic EL element is formed in advance on the main surface of the second film 1 and the first film is bonded will be described. In another embodiment, the film of the organic EL element is formed on the main surface of the first film, and the second film is bonded to the second film. Fig. 3 is a schematic diagram showing an embodiment of an apparatus for manufacturing an organic EL device. In the apparatus shown in Fig. 3, the second film 1 is bonded to the first film 11, and the additional film 82 is bonded to the second film u. On the second film 1, an organic EL element is formed in advance. The take-up roller 500 feeds the second film 1 on which the organic EL element is previously formed. The take-up roller 510 feeds the i-th film u. From the second film 1 which is taken up by the take-up roller 500, the i-th layer is formed by applying the adhesive agent 610' to the coating device 610' for the i-th layer. Then, the second film "with the second film 1' is placed in the state in which the organic element is disposed, and passes through the two rollers (between the first bonding rollers (1) and (10), and passes through the 323545 201228842 to reach the roller 513. The supplied 帛1 film 11 and the second film 1 are bonded together via the first adhesive layer ′, and the first adhesive layer 611 is cured (cured) by the curing device 611 for the first adhesive layer. On the first film 11 The second adhesive layer 52 is used to form the second adhesive layer by the second adhesive layer coating device 610 disposed downstream of the curing device 611, and then the first adhesive film 52, 522, the first thin film u The second film 820' is wound up from the unwinding roller 520, and the second film is cured (cured) by the second adhesive layer 621'. Then, the formed organic EL device 'is taken up by the take-up roller 530. The above bonding step can be carried out, for example, in a vacuum, an inert gas atmosphere or an atmospheric environment, in which an inert gas atmosphere or an atmospheric environment is compared. Ideal, ideal in the atmosphere. About this In the organic EL device of the embodiment, the bonding process can be performed in an atmospheric environment as described above due to the deterioration of the atmosphere. When the bonding step is performed in an atmospheric environment, the device for fabricating the organic EL device is not complicated and can be used. The organic device is formed by laminating the first film 11 and the second film 1 by a simple process. The organic EL device is wound up by the take-up roller 530. The organic device that is wound up, for example, can be in a vacuum, an inert gas. It is preferable to store it in an inert gas atmosphere or an atmospheric environment, and it is preferable to store it in an atmospheric environment, and it is preferable to store it in the atmospheric environment. The organic EL element of this embodiment is slow to generate by the atmospheric deterioration as mentioned above. And the second film u having a high gas barrier property is sealed with the second film 1, and the wound organic EL device can be stored in the air. The organic EL device taken in 323545 15 201228842 is stored in the air. The apparatus for the organic germanium device is not complicated. The organic EL device can be manufactured by a simple process. In this embodiment, the second thin film of the organic EL element is formed on the main surface. In the case where the organic EL element is formed on the main surface of the second film, the second EL film can be bonded to the first film, and the film can be bonded to the first film. In the present embodiment, in the case of attaching one additional film, two or more additional films may be bonded in order. In the case of bonding three or more additional films, the order of bonding may be It is appropriately changed according to the order of lamination of the organic EL device. (First film) Next, the first film I will be described as one of the features of the organic germanium device, which is a first film, particularly a gas barrier layer 5. First, the gas barrier layer 5 of the first film will be described. The first film has a gas barrier layer containing a stone atom, an oxygen atom and a carbon atom. By changing the distance from the surface of the gas barrier layer in the thickness direction (film thickness direction) of the gas barrier layer, the germanium atom for the total amount of the stone atom, the oxygen atom and the % atom is determined. The ratio of the number (矽 atomic ratio), the ratio of the number of oxygen atoms (oxygen atomic ratio), and the ratio of the number of carbon atoms (carbon source ratio) can be obtained by expressing the relationship between the atomic ratio and the distance from the surface of the gas barrier layer. Shixi distribution curve, oxygen distribution curve and carbon distribution curve. The curves obtained from the gas barrier layer of this embodiment satisfy the following conditions (1), (ii) and (iii). (1) In the region of the gas barrier phase thickness (four)_ or more, in the atomic ratio, the oxygen atom ratio, and the carbon atom ratio of Shi Xi 323545 201228842, the atomic ratio of germanium is the second largest value. (ii) The aforementioned carbon distribution curve has at least one extreme value. (iii) The difference (absolute value) between the maximum value and the minimum value of the carbon atom ratio of the carbon distribution curve is 5 at% or more. The condition of (i), in other words, the region of 90% or more in the thickness direction of the gas barrier layer, satisfies the following formula (1) or the following formula (2). (Oxygen atomic ratio) > (矽 atomic ratio) > (carbon atom ratio) (1) φ (carbon atom ratio) > (矽 atomic ratio) > (oxygen atom ratio) (2 <Substrate of First Film> The gas barrier layer is usually formed on a substrate. That is, the first film includes a substrate and a gas barrier layer formed on the substrate. Examples of the substrate of the i-th film include a colorless transparent resin film or a resin sheet. The resin used for such a substrate is, for example, a polyester resin selected from the group consisting of polyethylene terephthalate (pET) and polyethylene naphthalate (PEN); polyethylene (PE), polypropylene (pp) and a polyolefin resin such as a cyclic polyolefin; a polystyrene # resin; a polycarbonate resin; a polystyrene resin; a polyvinyl alcohol resin; and a saponified product of an ethylene-vinyl acetate copolymer; Polyacrylonitrile-based tree sap, acid-reducing resin; and polyaniline resin. These resins are preferred from the viewpoints of high heat resistance, small linear expansion ratio, and low production cost, and are preferably a polyolefin resin or a polyolefin resin, and PET and PEN. These resins may be used alone or in combination of two or more. The thickness of the base material of the first film can be appropriately set in consideration of the stability at the time of producing the first film. The thickness of the substrate as the first film is preferably from 5 to 50; απι from the viewpoint of transporting the film in a vacuum. In the case of forming a gas barrier layer by the CVD method of 17 323545 201228842, since the gas barrier layer is formed while discharging through the substrate of the i-th film, the thickness of the substrate of the i-th film is preferably 50 to 200 /zm. , 5〇 to 1〇〇_ more rational. The base material of the first film is preferably subjected to surface active treatment for washing the surface from the viewpoint of the stability of the gas barrier layer to be described later. As such a surface active treatment, for example, corona treatment, plasma treatment, and flame treatment. <Gas Barrier Layer> The gas barrier layer of the present embodiment is formed on at least one surface of the above substrate. The second film of the present embodiment may have at least one fluorine-containing barrier layer containing a ruthenium atom, an oxygen atom and a carbon atom and satisfying the above conditions (i), (ii) and (iii). For example, the first film may have another layer that does not satisfy at least one of the above conditions (i), (ii) and (iii). The gas barrier layer or other layer may further contain a nitrogen atom, an aluminum atom or the like. When the atomic ratio, the oxygen atom ratio, and the carbon atom ratio do not satisfy the condition (丨), the gas barrier properties of the gas barrier layer are lowered. It is preferable that the region satisfying the above formula (1) or (2) accounts for 90% or more of the thickness of the gas barrier layer. The ratio is more desirably 95% or more, and more desirably 1%. In the gas barrier layer according to the present embodiment, as the above condition (i i)', the carbon distribution curve must have at least one extreme value. In such a gas barrier layer, the carbon distribution curve has two extreme values, and it is more desirable to have three or more extreme values. In the case where the carbon distribution curve does not have an extreme value, when the first film is bent, the gas barrier property of the gas barrier layer is lowered. In the case where the carbon distribution curve has at least three extreme values, the distance between the adjacent extreme values of the carbon distribution curve is preferably less than 200 ηηη, and more preferably i 〇〇 nm or less. 323545 18 201228842 The term "extreme value" as used herein refers to the maximum or minimum value of the above distribution curve obtained by plotting the atomic ratio of the element to the distance from the surface of the gas barrier layer in the thickness direction of the gas barrier layer. The term "maximum value" refers to a point in the above distribution curve in which the value of the atomic ratio of the element changes from increasing to decreasing with a change in the distance from the surface of the gas barrier layer, and compared with the atomic ratio of the element at the point, The atomic ratio of the element at the point where the atomic ratio of the element at the position of 2 〇 nm is decreased by 3 at% or more from the surface of the gas barrier layer in the thickness direction of the gas barrier (4). The term "minimum value" refers to a point at which the value of the atomic ratio of an element changes from decreasing to increasing with a change in the distance from the surface of the gas barrier layer, and is compared with the value of the atomic ratio of the element at the point, from which the gas is blocked from the gas. The atomic ratio of the element of the point at which the distance of the surface of the gas barrier layer in the thickness direction of the layer is further changed by 20 nm is increased by 3 at% or more. In the gas barrier layer of the present embodiment, as the above condition (1丨丨), the difference (absolute value) between the maximum value and the minimum value of the carbon atom ratio of the carbon distribution curve is required to be 5 at% or more. In such a gas barrier layer, the difference between the maximum value and the minimum value of the carbon atom ratio is preferably 6 at% or more, and 7 at% or more is more preferable. When the difference is less than 5 at% and the film is bent, the gas barrier property of the gas barrier layer is lowered. The upper limit of the difference is not particularly limited and is usually about right and left. (Oxygen distribution curve, extreme value) The oxygen distribution curve of the gas barrier layer has at least one extreme value, preferably at least two extreme values, and has at least three extreme values. 323545 19 201228842 ·' : Oxygen knife When the cloth curve has an extreme value, it is difficult to reduce the gas barrier property of the gas barrier layer when the first film is bent. The oxygen knife cloth curve of the gas barrier has at least three extreme values, and the oxygen distribution curve has an extreme value and abutting the extreme value, respectively, from the surface of the gas barrier layer facing the gas barrier layer The difference between the distances, any one is more desirable than the 'lGGmn below. ^Oxygen distribution curve, the difference between the maximum value and the minimum value)

乳體阻隔層的氧分佈曲線之氧原子比的最大值與最小值的差為5at%或以上較理想，6at%或以上更理想，7at%或以上更加理想。該差為上述的下限以上時，彎曲第1薄膜時，氣體阻隔層產生氣體阻隔性之降低有困難的傾向。該差的上限，無特別限制，通常為30at%左右。氣體阻隔層的矽分佈曲線之矽原子比的最大值與最小值的差為未達5at%較理想，未達4at%更理想，未達3at〇/0 更加理想。該差未達上述的上限時’氣體阻隔層的氣體阻隔性有特別變高的傾向。 (氧碳分佈曲線、最大值與最小值的差）於表示離氣體阻隔層的厚度方向之該層表面之距離與對石夕原子、氧原子及碳原子的合計量而言之氧原子及碳原子的合計量之比例（氧及碳的原子比）的關係之氧碳分佈曲線，氧及碳的原子比之合計的最大值與最小值的差未達 5at%較理想’未達4at%更理想’未達3at%更加理想。該差未達上述的上限時’氣體阻隔層的氣體阻隔性有特別變高的傾向。 323545 20 201228842 矽分佈曲線、氧分佈曲線、碳分佈曲線及氧碳分佈曲線，藉由併用X射線光電子分光法（XPS : Xmy Photoelectron Spectroscopy)的測定與氬氣等稀有氣體The difference between the maximum value and the minimum value of the oxygen atomic ratio of the oxygen barrier curve of the emulsion barrier layer is preferably 5 at% or more, more preferably 6 at% or more, and more preferably 7 at% or more. When the difference is at least the above lower limit, when the first film is bent, the gas barrier layer tends to have a poor gas barrier property. The upper limit of the difference is not particularly limited and is usually about 30 at%. The difference between the maximum value and the minimum value of the 矽 atomic ratio of the gas barrier layer is preferably less than 5 at%, more preferably less than 4 at%, and more preferably less than 3 at 〇/0. When the difference does not reach the above upper limit, the gas barrier properties of the gas barrier layer tend to be particularly high. (oxygen carbon distribution curve, the difference between the maximum value and the minimum value) is the distance between the surface of the layer in the thickness direction of the gas barrier layer and the oxygen atom and carbon in the total amount of the atoms, oxygen atoms and carbon atoms. The oxygen-carbon distribution curve of the ratio of the total atomic ratio (atomic ratio of oxygen to carbon), the difference between the maximum value and the minimum value of the atomic ratio of oxygen and carbon is less than 5 at%, which is more than 'at 4 at%. The ideal 'not up to 3at% is more ideal. When the difference does not reach the above upper limit, the gas barrier property of the gas barrier layer tends to be particularly high. 323545 20 201228842 矽 distribution curve, oxygen distribution curve, carbon distribution curve and oxygen-carbon distribution curve, by X-ray photoelectron spectroscopy (XPS: Xmy Photoelectron Spectroscopy) and rare gas such as argon

離子滅經’使樣品内部露出’同時依序進行表面組成分析，藉由所謂XPS縱深分佈（depth profiling)測定製作。藉由如此的XPS縱彡木分佈測定所得的分佈曲線’例如以縱軸為各元素的原子比（單位：at%)，橫軸為蝕刻時間（濺鍍時間）製作。蝕刻時間大致上與從氣體阻隔層的厚度方向之氣體隔Β的表面之距離相關„ Γ/ί ，怍马，離軋體阻隔層的厚度方向之氣體阻隔層的一侧表面之距離」，可採用從縱冰分佈測定時採用之蝕刻速度與蝕刻時間的關係算出之從氣體阻隔層的表面之距離。於如此的XPS縱深分佈測定，採用之濺鍍法，採用使用氬（的作為_離子種之稀有 =離子錢錢法’其银刻速度（etching rate)為 .nm/sec(Si〇2熱氧化膜換算值）較理想。阻隔膜' 全部均勻且具有良好的氣體阻隔性之氣體點，氣體阻隔層在膜面方向（與氣體阻隔層的主 μ (「表友面）平行之方向）實質上—樣較理想。於本說明書，所 ^分層Ϊ膜面方向實質上一樣」，係指藉由燃縱製作惫_氣體阻隔層的膜面之任意2處的測定處， ^^佈曲線、碳分佈曲線及氧碳分佈曲線之情況，該互測定處所得的碳分佈曲線所具有之極值的數目值的差hr料衫佈曲線之碳料比之最缝與最小值的差互為相同，或者該些差在_以内。 323545 21 201228842 碳分佈曲線實質上為連續較理想。於本說明書’所謂「碳分佈曲線實質上為連續」，係指碳分佈曲線之碳原子比不包含不連續變化的部分。具體地，此係蝕刻速度與蝕刻時間算出的氣體阻隔層的厚度方向之從該層的表面之距離 (X、單位：nm)與碳原子比（c、單位：at%)之關係，滿足下述數學式（F1): '1.0 ^ Cdc/dx) ^ ! 〇 …（F1) 所示的條件。關於本實施態樣之第1薄膜，具備至少1層之完全滿 &上述條件（i)、（ii)及（iii)之氣體阻隔層即可，第1薄膜亦可具備2層以上之完全滿足上述條件（i)、（ii)及（iii) 之氣體阻隔層。於第1薄膜具備2層以上如此的氣體阻隔層之情況’該些複數個氣體阻隔層的材質可為相同’亦可為相異。於第1薄膜具備2層以上如此的氣體阻隔層之情況，該些氣體阻隔層可形成於基材的一側的表面上，亦可 # 分別形成於基材兩側的表面上。第1薄膜亦可包含不具有氣體阻隔性之薄膜層。於矽分佈曲線、氧分佈曲線及碳分佈曲線，矽原子比、氧原子比及碳原子比滿足式（1)所示的條件之情況，對氣體阻隔層中石夕原子、氧原子及碳原子的合計量而言之石夕原子的含量的原子比例為25至45at%較理想，30至40at%更理想。對氣體阻隔層中矽原子、氧原子及碳原子的合計量而 5之氡原子的含量的原子比例為33至67at%較理想，45至 Wat%更理想。對氣體阻隔層中矽原子、氧原子及碳原子的 323545 22 201228842 合計量而言之碳原子的含量的原子比例為3至33at%較理想，3至25at%更理想。於矽分佈曲線、氧分佈曲線及碳分佈曲線，矽原子比、氧原子比及奴原子比滿足式（2)所示的條件之情況，對氣體阻隔層中矽原子、氧原子及碳原子的合計量而言之矽原子的含量的原子比例為25至45at%較理想，30至40at%更理想。對氣體阻隔層中矽原子、氧原子及碳原子的合計量而吕之氧原子的含量的原子比例為1至33at%較理想，1 〇至 27at%更理想。對氣體阻隔層中矽原子、氧原子及碳原子的合計量而言之碳原子的含量的原子比例為33至66at%較理想，40至57at%更理想。氣體阻隔層的厚度為5至3000nm較理想，1〇至2〇〇〇nm 更理想，100至lOOOnm更加理想。氣體阻隔層的厚度為上述數值範圍内時’可得到更好的氧氣阻隔性、水蒸氣阻隔性等氣體阻隔性，同時有更有效地抑制因彎曲之氣體阻隔性之降低的傾向。於第1溥膜具備複數個氣體阻隔層的情況，該些氣體阻隔層的厚度之合計值，通常為1〇至100〇〇11111，1〇至5〇〇〇咖較理想，100至3000mn更理想，2〇〇至2〇〇〇nm更加理想。氣體阻隔層的厚度之合計值為上述數值範圍内時，可得到更好的氧氣阻隔性、水蒸氣阻隔性等氣體阻隔性，同時有更有效地抑制因彎曲之氣體阻隔性之降低的傾向。第1薄膜’除第1薄膜的基材及氣體阻隔層外，依據需要可更具備底塗（primer coat)層、熱封（heat seal)性 323545 23 201228842 樹脂層、接著劑層等。如此的底塗層可使用可能提高基材與氣體阻隔層的接著性之底塗劑而形成。熱封性樹脂層，可使用適當的習知的熱封性樹脂層而形成。接著劑層，可使用適當的習知的接著劑層而形成，藉由如此的接著劑層，可接著複數的第1薄膜彼此。第1薄膜的氣體阻隔層，為藉由電漿化學氣相沈積法形成的層較理想。藉由電漿化學氣相沈積法形成的氣體阻隔層，為將第1薄膜的基材配置於一對成膜滾輪上，藉由 ® 於一對成膜滚輪之間放電而產生電漿之電漿化學氣相沈積法所形成的層更理想。於一對成膜滚輪之間放電時，一對成膜滚輪的極性交替反轉較理想。如此的電漿化學氣相沈積法所使用的成膜氣體，包含有機矽化合物及氧較理想。成膜氣體中的氧含量，為成膜氣體中有機矽化合物的全量完全氧化所必須的理論氧量以下較理想。第1薄膜的氣體阻隔層，為藉由連續成膜製程所形成的層較理想。利用如 Φ 此的電漿化學氣相沈積法，形成氣體阻隔層的方法之詳細，於後述的第1薄膜的製造方法說明。〈第1薄膜的製造方法〉然後，說明第1薄膜的製造方法。第1薄膜，可藉由在第1薄膜的基材表面上形成氣體阻隔層而製造。作為於第1薄膜的基材表面上形成氣體阻隔層之方法，從氣體阻隔性的觀點，電漿化學氣相沈積法（電漿CVD)較理想。電漿化學氣相沈積法亦可為潘寧（Penning)放電電漿方式的電漿化學氣相沈積法。 24 323545 201228842 於電漿化學氣相沈積法，產生電漿時，在複數成膜滾輪之間的空間產生電漿放電較理想，使用一對成膜滾輪，於該一對成膜滾輪分別配置基材，在一對成膜滾輪間放電產生電漿更理想。藉由使用如此的一對成膜滾輪，成膜時，存在於一側的成膜滾輪上之基材上，使氣體阻隔層成膜，且存在於另一侧的成膜滾輪上之基材上，也可同時使氣體阻隔層成膜。藉此，不僅可有效率地製造薄膜（氣體阻隔層），可用2倍成膜速率，同時使相同構造的氣體阻隔層成 ® 膜。結果，碳分佈曲線之極值至少倍增，可有效率地形成完全滿足上述條件（i)、（ii)及（iii)之氣體阻隔層。從生產性的觀點，以滾輪對滾輪（roll-to-roll)方式，在第1 薄膜的基材表面上，形成氣體阻隔層較理想。藉由如此的電漿化學氣相沈積法製造第1薄膜時可使用的裝置，無特別限制，具備至少一對成膜滾輪以及電漿電源，於前述一對成膜滚輪之間可進行放電之裝置較理想。例如，藉由使 φ 用第4圖所示的製造裝置，一邊利用電漿化學氣相沈積法，以滾輪對滾輪（rol卜to-roll)方式可製造第1薄膜。以下，一邊參照第4圖，更詳細地說明第1薄膜的製造方法。第4圖為表示為了製造關於本實施態樣的第1薄膜可適合利用之製造裝置之一例的典型示意圖。以下的說明以及圖式中，相同或相當的構件賦予相同的符號，適當地省略重複的說明。第4圖所示的製造裝置，具備送出滚輪701，運送滾輪21、22、23、24，對向配置之一對成膜滚輪31、32，氣 25 323545 201228842 體供應管4卜電漿產生用電源51，設置於成膜滾輪31及 32的内部之磁場產生裝置61、62以及捲取滾輪 702。於該製造裝置’至少成膜滾輪3卜32，㈣供應管4卜電裝產生用電源5卜磁場產生裝置6卜⑽配置於圖式省略的真空腔體内。该真空腔體連接圖式省略的真空泵（vacuum P卿），藉由如此的真空栗，可適當調整真空腔體内的壓力。於第4圖所不的製造震置，一對成膜滚輪（成膜滚輪 31及32)可作$ —對對肖冑極之功能城膜滚輪分別連接電聚產生用電源5卜藉由從電漿產生用電源51供應電 A輪31與成難輪32之間的空間放電，藉此於成膜/袞輪31、與成臈滚輪犯之間的空間產生電聚。於成膜滾^ 31^成膜滾輪32彻作為電極之情況，適當改變 cm又。十以便可利用作為電極。一對成膜滚輪（成膜滾輪31及32)，g?番士、廿丄 -置成其中心軸在相同平面上略為平行較此的一對成膜滾輪（成膜滾輪31及32)，藉刀、、臈滾輪上使氣體阻隔層成膜，與在一個成膜滚輪上成膜的^比較，可加倍成膜速率。另外，因相同構 &的膜可重豐成膜’碳分佈曲線之極值的數目可能至少倍增根據如此的製造農置，藉由CVD法可於基材6的表面上形成氣触Μ，於成膜滾輪 31上時於基材6的表面上堆積膜的成〃’且再於成膜滾輪32上時於基材6的表面上亦可食積膜的成分。所以，基材6的表面上可有效率地形成氣體阻隔層。於成膜'袞輪31與成膜滚輪32的内部，設置磁場產生 26 323545 201228842 裝置61及62。該磁場產生裝置61及62，例旋轉’其本體錢轉地蚊。 _綠作為成膜滾輪31與成膜滾輪32，可使用通常適合的滾輪。成膜滾輪31及32的直徑，從所謂更有效率地二薄膜域之觀點，實質上相同較理I成膜滾輪3ι及32的直控’從放電條件、腔體的空間等觀點，5至1QQcm較理於圖所示的製造裝置’於—對成膜滾輪（成膜滚輪 )上’配置基材6 ’使基材6的表面互相對向。藉 ^配=如此的基材6，於成膜滾輪31與成膜滾輪犯之間二電產生電_ ’存在於一對成膜滾輪間之基材6的士別表面可能同時成膜。亦即’根據如法，在成膜滚輪31上時於基材6的表面膜滾輪32上時可使膜成分堆積。所二材的表面上，可有效率地形成氣體_層。作為送出滚輪701及運送滾輪21、22、^^，可使用通常的滾輪。捲取滾輪7〇2 , 阻隔層之紐6者㈣，㈣⑽^可捲料成有氣體輪適當選擇。肩限制，可從通常使用的滾料4 = Ϊ管41 ’只要是可以既定的速度供應或排出原 ==電Γ產生用電源51，可使用適當通常的電 ^生裝置的電源。電漿產生用電源Η，供應電力予與其 ^之成膜滾輪31與成膜滾輪32，可·該些作為放電的對向電極。電渡產生用電源51，由於可有效率地實施 323545 27 201228842 電漿CVD，利用可使一對成膜滾輪的極性交替反轉之電源 (交流電源等）較理想。電漿產生用電源51，為了可有效率地實施電漿CVD，可設定施加電力100W至10kW，交流頻率為50Hz至500kHz更理想。磁場產生裝置61及62，可使用適當通常的磁場產生裝置。作為基材6，除第1薄膜的基材外，可使用具有預先形成有氣體阻隔層之薄膜。如此，藉由使用具有預先形成有氣體阻隔層之薄膜作為基材6, 可使氣體阻隔層的厚度變厚。 ^ 使用第4圖所示的製造裝置，例如藉由適當調整原料氣體的種類、電漿產生裝置的電極鼓的電力、真空腔體内的壓力、成膜滾輪的直徑以及薄膜的運送速度，可製造第 1薄膜。使用第4圖所示的製造裝置，供應成膜氣體（原料氣體等）至真空腔體内，同時藉由在一對成膜滾輪（成膜滾輪31 及32)間產生放電，藉由電漿而分解成膜氣體（原料氣體 φ 等），於成膜滚輪31上的基材6的表面上以及於成膜滾輪 32上的基材6的表面上，藉由電聚CVD法形成氣體阻隔層。如此的成膜時，基材6藉由送出滾輪701及成膜滚輪31 等，分別運送，藉由滚輪對滚輪方式之連續成膜的製程，在基材6的表面上形成氣體阻隔層。氣體阻隔層的形成所使用的成膜氣體中的原料氣體，依據所形成的氣體阻隔層之材質適當選擇。作為原料氣體，例如可使用含有矽之有機矽化合物。原料氣體，除有機矽化合物外，亦可含有作為矽來源之單矽烷。 28 323545 201228842 原料氣體，例如包含選自由六曱基二矽氧烷、1，1，3, 3-四甲基二矽氧烷、乙烯基三甲基矽烷、曱基三曱基矽烷、六甲基二矽烷、甲基矽烷、二曱基矽烷、三甲基矽烷、二乙基碎烧、丙基梦烧、苯基碎烧、乙稀基乙氧基碎烧、乙稀基三曱氧基紗院、四曱氧基碎烧、四乙氧基石夕烧、苯基三甲氧基石夕炫、曱基三乙氧基砍烧及八甲基環四碎氧烧所成群中至少1種有機矽化合物。該些有機矽化合物中，從化合物的使用性及所得的氣體阻隔層的氣體阻隔性等特性 ^ 之觀點，較理想為六曱基二矽氧烷及1，1，3, 3-四曱基二矽氧烷。該些有機矽化合物，可單獨1種或組合2種以上使用。成膜氣體可包含除原料氣體以外的反應氣體。作為該反應氣體，可使用適當選擇與原料氣體反應形成氧化物、氮化物等無機化合物之氣體。作為為了形成氧化物的反應氣體，例如可使用氧氣或臭氧。作為為了形成氮化物的反 φ 應氣體，例如可使用氮氣或氨。該些反應氣體，可單獨1 種或組合2種以上使用。例如，於形成氧氮化物的情況，可組合為了形成氧化物的反應氣體與為了形成氮化物的反應氣體。作為成膜氣體，為了供應原料氣體至真空腔體内，依據需要，可使用載送氣體（carrier gas)。作為成膜氣體，為了產生放電，依據需要，可使用放電用氣體。作為如此的載送氣體以及放電用氣體，可使用適當習知者。例如可使用氦氣、氬氣、氖氣及氙氣等稀有氣體或氫氣作為載送 29 323545 201228842 氣體或放電用氣體。於成膜氣體含有原料氣體以及反應氣體的情況，原料氣體與反應氣體的比例，比為了原料氣體以及反應氣體完全反應理論上所需的反應氣體的量之比例，反應氣體的比例不過份過剩較理想。藉由適當地控制反應氣體的比例，可特別有效率地形成完全滿足上述條件（i)、（ii)及（iii) 之氣體阻隔層。於成膜氣體含有有機石夕化合物以及氧氣的情況，成膜氣體的氧氣量，為成膜氣體中的有機矽化合物的全量完全氧化理論上所需要的氧氣量以下較理想。以下’作為成膜氣體，使用含有作為原料氣體之六甲基二矽氧烷（有機矽化合物：HMDSO : (CH3)6Si2〇 :)以及作為反應氣體之氧氣（〇2)之氣體，可列舉製造矽-氧系氣體阻隔層的情況為例’詳細說明成膜氣體中的原料氣體與反應氣體的適合比例等。於含有作為原料氣體之六曱基二矽氧烷（HMDS0、 φ (CHAShO)以及作為反應氣體之氧氣（〇2)之成膜氣體，藉由電漿CVD使其反應，製作矽-氧系氣體阻隔層的情況，在該成膜氣體中，引起下述反應式（3): (CH3)6Si2〇+12〇2-^6C〇2+9H2〇+2Si〇2 (3) 所示的反應，形成二氧化矽。於該反應，1莫耳的六曱基二矽氧烷完全氧化理論上所需要的氧氣量為12莫耳。所以，成膜氣體中，對1莫耳的六曱基二矽氧烷而言含有12 莫耳以上的氧氣完全反應的情況，可形成均勻的二氧化矽。於該情況，無法形成完全滿足上述條件（i)至（iii)之 30 323545 201228842 氣體阻隔層的可能性高。所以，形成關於本實施態樣之氣體阻隔層時’不使上述（3)式的反應完全進行，對1莫耳的六甲基二石夕氧烷而言之氧氣量為少於化學計量比的12莫耳較理想。實際的電漿CVD腔體内的反應，被認為原料的六甲基二石夕氧烷與反應氣體的氧氣，因從氣體供應部朝成膜區域供應而成膜’即使反應氣體的氧氣之莫耳量（流量）為原料的六甲基二矽氧烷之莫耳量（流量）的12倍之莫耳 1(流量），現實上反應無法完全進行，氧氣比化學計量比過份過剩供應，開始就完成反應的情況多。例如，為了藉由CVD法完全氧化得到氧化矽，亦有氧氣的莫耳量（流量）為原料的六甲基二矽氧烷之莫耳量（流量）的20倍以上的程度之情況。所以，對原料的六甲基二矽氧烷之莫耳量（流量）而言之氧氣的莫耳量（流量）為化學計量比的12倍量以下（更理想為1G倍以下）的量較理想。藉由於成膜氣體含有如此的比之六甲基二魏院以及氧氣，沒有完全氧化之六曱基-梦氧烧巾％1原子與氫原子取人氣體阻隔層中。结果，可形成完全滿足上述條件⑴至（iii)之氣體阻隔層、了藉此，發揮所得的第1薄膜之良好的氣體阻隔性及耐青曲性。成膜氣體中對六甲基二珍氧烧而言之氧氣的莫耳量（流量）太少時，沒有氧化之氫原子過剩地取入氣體阻隔層中。於該情況，因層的透利用氣體阻隔層作為如有機EL裝置及有機糾场電料需要相性之裝置㈣撓從如此的觀點’成膜氣體中對六曱基二錢烧之莫耳土量（流 323545 201228842The ion annihilation was carried out to expose the inside of the sample, and the surface composition analysis was sequentially performed, and the measurement was carried out by a so-called XPS depth profiling measurement. The distribution curve obtained by measuring the XPS vertical raft distribution is produced, for example, by the atomic ratio (unit: at%) of each element on the vertical axis and the etching time (sputter time) on the horizontal axis. The etching time is substantially related to the distance from the surface of the gas barrier in the thickness direction of the gas barrier layer „ Γ / ί , 怍 , the distance from the side surface of the gas barrier layer in the thickness direction of the barrier layer of the rolled body, The distance from the surface of the gas barrier layer was calculated using the relationship between the etching rate and the etching time used in the measurement of the longitudinal ice distribution. For such XPS depth distribution measurement, the sputtering method is adopted, and the etch rate of argon is used as the rare ion=ion money method. The etching rate is .nm/sec (Si〇2 thermal oxidation) The membrane-converted value is ideal. The barrier film is a gas point that is uniform and has good gas barrier properties. The gas barrier layer is in the direction of the film surface (in the direction parallel to the main μ of the gas barrier layer). - The sample is ideal. In the present specification, the direction of the layered ruthenium film is substantially the same, which means that the measurement surface of any two of the film faces of the 惫 gas barrier layer is produced by burning, ^^ cloth curve, In the case of the carbon distribution curve and the oxygen-carbon distribution curve, the difference between the number of extreme values of the carbon distribution curve obtained at the mutual measurement is the same as the difference between the minimum and minimum of the carbon material of the cloth cloth curve 323545 21 201228842 The carbon distribution curve is substantially continuous and ideal. In the present specification, the so-called "carbon distribution curve is substantially continuous" means that the carbon atomic ratio of the carbon distribution curve does not contain discontinuities. Part of change The relationship between the distance (X, unit: nm) from the surface of the layer in the thickness direction of the gas barrier layer calculated by the etching rate and the etching time, and the carbon atom ratio (c, unit: at%), satisfy the following Mathematical formula (F1): '1.0 ^ Cdc/dx) ^ ! 〇...(F1) The conditions shown. The first film of the present embodiment may have at least one layer of a gas barrier layer that completely satisfies the above conditions (i), (ii), and (iii), and the first film may have two or more layers. The gas barrier layer satisfying the above conditions (i), (ii) and (iii). In the case where the first film has two or more gas barrier layers, the materials of the plurality of gas barrier layers may be the same or different. In the case where the first film has two or more gas barrier layers, the gas barrier layers may be formed on one surface of the substrate or may be formed on the surfaces on both sides of the substrate. The first film may also include a film layer which does not have gas barrier properties. In the distribution curve, oxygen distribution curve and carbon distribution curve, the atomic ratio, the oxygen atom ratio and the carbon atom ratio satisfy the conditions shown in the formula (1), and the gas atoms, oxygen atoms and carbon atoms in the gas barrier layer The atomic ratio of the content of the stone atoms in the total amount is preferably 25 to 45 at%, more preferably 30 to 40 at%. The atomic ratio of the content of the ruthenium atom in the gas barrier layer and the content of the ruthenium atom of 5 is preferably 33 to 67 at%, more preferably 45 to Wat%. The atomic ratio of the carbon atom content to the ruthenium atom, the oxygen atom and the carbon atom in the gas barrier layer is preferably 3 to 33 at%, more preferably 3 to 25 at%. In the distribution curve, oxygen distribution curve and carbon distribution curve, the atomic ratio, the oxygen atom ratio and the slave atomic ratio satisfy the conditions shown in the formula (2), and the atomic, oxygen and carbon atoms in the gas barrier layer The atomic ratio of the content of germanium atoms in terms of total amount is preferably 25 to 45 at%, more preferably 30 to 40 at%. The atomic ratio of the content of the halogen atom, the oxygen atom and the carbon atom in the gas barrier layer is preferably from 1 to 33 at%, more preferably from 1 〇 to 27 at%. The atomic ratio of the content of carbon atoms in the total amount of germanium atoms, oxygen atoms and carbon atoms in the gas barrier layer is preferably 33 to 66 at%, more preferably 40 to 57 at%. The thickness of the gas barrier layer is preferably from 5 to 3000 nm, more preferably from 1 〇 to 2 〇〇〇 nm, and more preferably from 100 to 100 nm. When the thickness of the gas barrier layer is within the above numerical range, a gas barrier property such as better oxygen barrier property and water vapor barrier property can be obtained, and a tendency to lower the gas barrier property due to bending is more effectively suppressed. In the case where the first ruthenium film has a plurality of gas barrier layers, the total thickness of the gas barrier layers is usually from 1 〇〇 to 100 〇〇 11111, preferably from 1 〇 to 5 〇〇〇, and from 100 to 3000 mn. Ideal, 2〇〇 to 2〇〇〇nm is more ideal. When the total thickness of the gas barrier layer is within the above numerical range, gas barrier properties such as better oxygen barrier properties and water vapor barrier properties can be obtained, and the tendency of the gas barrier property due to bending to be lowered can be more effectively suppressed. In addition to the base material and the gas barrier layer of the first film, a first coat layer, a heat seal 323545 23 201228842 resin layer, an adhesive layer, and the like may be further provided as needed. Such an undercoat layer can be formed using a primer which may improve the adhesion of the substrate to the gas barrier layer. The heat-sealable resin layer can be formed using a suitable conventional heat-sealable resin layer. The subsequent layer can be formed using a suitable conventional adhesive layer, and by such an adhesive layer, a plurality of first films can be bonded to each other. The gas barrier layer of the first film is preferably a layer formed by a plasma chemical vapor deposition method. The gas barrier layer formed by the plasma chemical vapor deposition method is configured such that the base material of the first film is placed on a pair of film forming rollers, and the plasma is generated by discharging between the pair of film forming rollers. The layer formed by slurry chemical vapor deposition is more desirable. When discharging between a pair of film forming rollers, the polarity of the pair of film forming rollers is alternately reversed. The film forming gas used in such a plasma chemical vapor deposition method preferably contains an organic cerium compound and oxygen. The oxygen content in the film forming gas is preferably equal to or less than the theoretical oxygen amount necessary for the complete oxidation of the organic cerium compound in the film forming gas. The gas barrier layer of the first film is preferably a layer formed by a continuous film formation process. The details of the method of forming the gas barrier layer by the plasma chemical vapor deposition method such as Φ will be described in the method for producing the first film to be described later. <Method for Producing First Film> Next, a method for producing the first film will be described. The first film can be produced by forming a gas barrier layer on the surface of the substrate of the first film. As a method of forming a gas barrier layer on the surface of the substrate of the first film, plasma chemical vapor deposition (plasma CVD) is preferred from the viewpoint of gas barrier properties. The plasma chemical vapor deposition method can also be a plasma chemical vapor deposition method in the Penning discharge plasma mode. 24 323545 201228842 In the plasma chemical vapor deposition method, when plasma is generated, it is preferable to generate a plasma discharge in a space between the plurality of film forming rollers, and a pair of film forming rollers are used, and a pair of film forming rollers are respectively arranged. It is more desirable to discharge the plasma between a pair of film forming rollers to produce a plasma. By using such a pair of film forming rollers, when forming a film, the film is formed on the substrate on one side of the film forming roller, the gas barrier layer is formed, and the substrate is formed on the film forming roller on the other side. At the same time, the gas barrier layer can also be formed into a film. Thereby, not only the film (gas barrier layer) can be efficiently produced, but also a film formation rate of 2 times can be used, and a gas barrier layer of the same structure can be formed into a film. As a result, the extreme value of the carbon distribution curve is at least multiplied, and the gas barrier layer which satisfies the above conditions (i), (ii) and (iii) can be efficiently formed. From the viewpoint of productivity, it is preferable to form a gas barrier layer on the surface of the substrate of the first film in a roll-to-roll manner. The apparatus which can be used when manufacturing the first film by such a plasma chemical vapor deposition method is not particularly limited, and includes at least a pair of film forming rollers and a plasma power source, and discharge can be performed between the pair of film forming rollers. The device is ideal. For example, by using φ with the manufacturing apparatus shown in Fig. 4, the first film can be produced by a roll-to-roll method by a plasma chemical vapor deposition method. Hereinafter, a method of manufacturing the first film will be described in more detail with reference to Fig. 4. Fig. 4 is a typical schematic view showing an example of a manufacturing apparatus which can be suitably used for producing the first film of the present embodiment. In the following description and the drawings, the same or corresponding components are designated by the same reference numerals, and the repeated description is omitted as appropriate. The manufacturing apparatus shown in Fig. 4 includes a feed roller 701, transport rollers 21, 22, 23, and 24, and one of the opposing pairs of the film forming rollers 31 and 32, and the gas 25 323545 201228842 body supply pipe 4 for plasma generation. The power source 51 is provided to the magnetic field generating devices 61 and 62 and the winding roller 702 inside the film forming rollers 31 and 32. In the manufacturing apparatus, at least the film forming roller 3b, (4) the supply pipe 4, the electric power generating device 5, and the magnetic field generating device 6 (10) are disposed in the hollow cavity omitted from the drawing. The vacuum chamber is connected to a vacuum pump (vacuum P) which is omitted from the drawing. With such a vacuum pump, the pressure in the vacuum chamber can be appropriately adjusted. In the case of the shock installation in Fig. 4, a pair of film-forming rollers (film-forming rollers 31 and 32) can be used as a power source for the power-collecting roller. The plasma generating power source 51 supplies a space discharge between the electric A wheel 31 and the forming wheel 32, whereby electric power is generated in the space between the film forming/turning wheel 31 and the smashing roller. In the case where the film forming roller 32 is completely used as an electrode, the cm is appropriately changed. Ten so that it can be used as an electrode. a pair of film forming rollers (film forming rollers 31 and 32), g?, 廿丄, and a pair of film forming rollers (film forming rollers 31 and 32) whose central axes are slightly parallel on the same plane, By forming a film on the gas barrier layer by means of a knife and a roller, the film formation rate can be doubled compared with the film formed on a film forming roller. In addition, the number of extreme values of the carbon distribution curve of the film of the same structure can be at least multiplied according to the manufacturing process, and the gas contact can be formed on the surface of the substrate 6 by the CVD method. When the film forming roller 31 is placed on the surface of the substrate 6, the film is deposited on the surface of the substrate 6, and the film is formed on the surface of the substrate 6 when the film is formed on the film roll 32. Therefore, the gas barrier layer can be efficiently formed on the surface of the substrate 6. In the film forming 'turning wheel 31 and the film forming roller 32, a magnetic field is generated to generate 26 323545 201228842 devices 61 and 62. The magnetic field generating devices 61 and 62, for example, rotate their body to the ground. _ Green As the film forming roller 31 and the film forming roller 32, a generally suitable roller can be used. The diameters of the film forming rollers 31 and 32 are substantially the same as the direct control of the film forming rollers 3 and 32 from the viewpoint of the more efficient two film domains, from the viewpoints of discharge conditions, space of the cavity, etc. 5 to 1QQcm is based on the manufacturing apparatus shown in the drawing, and the substrate 6' is disposed on the film forming roller (film forming roller) so that the surfaces of the substrate 6 oppose each other. By using such a substrate 6, between the film forming roller 31 and the film forming roller, the electricity generated by the two electrodes may be simultaneously formed on the surface of the substrate 6 between the pair of film forming rollers. That is, according to the method, when the film forming roller 31 is on the surface film roller 32 of the substrate 6, the film component can be deposited. On the surface of the two materials, the gas layer can be formed efficiently. As the delivery roller 701 and the transport rollers 21, 22, and ^^, a normal roller can be used. The take-up roller 7〇2, the barrier layer 6 (4), (4) (10) ^ can be rolled into a gas wheel to be properly selected. The shoulder limit can be supplied from the commonly used roller 4 = the manifold 41' as long as the power source 51 can be supplied or discharged at a predetermined speed, and the power source of a suitable normal electric device can be used. The plasma generating power source 供应 supplies electric power to the film forming roller 31 and the film forming roller 32, which can serve as counter electrodes for discharging. Since the electric power generation source 51 can efficiently perform 323545 27 201228842 plasma CVD, it is preferable to use a power source (such as an AC power source) that alternately reverses the polarity of a pair of film forming rollers. The plasma generating power source 51 can be set to apply electric power of 100 W to 10 kW and an alternating current frequency of 50 Hz to 500 kHz in order to efficiently perform plasma CVD. The magnetic field generating devices 61 and 62 can use a suitable magnetic field generating device as appropriate. As the substrate 6, in addition to the substrate of the first film, a film having a gas barrier layer formed in advance can be used. Thus, by using a film having a gas barrier layer formed in advance as the substrate 6, the thickness of the gas barrier layer can be made thick. ^ Using the manufacturing apparatus shown in Fig. 4, for example, by appropriately adjusting the type of the material gas, the electric power of the electrode drum of the plasma generating apparatus, the pressure in the vacuum chamber, the diameter of the film forming roller, and the conveying speed of the film, The first film was produced. Using the manufacturing apparatus shown in Fig. 4, a film forming gas (raw material gas, etc.) is supplied into the vacuum chamber while generating a discharge between a pair of film forming rollers (film forming rollers 31 and 32) by means of plasma The gas is formed into a gas barrier layer by electropolymerization CVD on the surface of the substrate 6 on the film forming roller 31 and the surface of the substrate 6 on the film forming roller 32 by decomposing the film forming gas (raw material gas φ, etc.). . In the film formation as described above, the substrate 6 is transported by the feed roller 701, the film forming roller 31, and the like, and a gas barrier layer is formed on the surface of the substrate 6 by a process of continuous film formation by a roller-to-roller method. The material gas in the film forming gas used for forming the gas barrier layer is appropriately selected depending on the material of the gas barrier layer to be formed. As the raw material gas, for example, an organic ruthenium compound containing ruthenium can be used. The material gas may contain, in addition to the organic compound, monodecane as a source of cerium. 28 323545 201228842 The raw material gas, for example, is selected from the group consisting of hexamethylene dioxane, 1,1,3, 3-tetramethyldioxane, vinyl trimethyl decane, decyl decyl decane, hexa Dioxane, methyl decane, dinonyl decane, trimethyl decane, diethyl sinter, propyl monoxide, phenyl sinter, ethylene ethoxy calcination, ethylene tridecyloxy At least one organic group in the group of gauze, tetradecyloxycylcholium, tetraethoxy zebra, phenyltrimethoxyxan, decyl triethoxy chopping and octamethylcyclotetrahydrogen矽 compound. Among these organic ruthenium compounds, hexamethylene dioxane and 1,1,3,3-tetradecyl are preferred from the viewpoints of the properties of the compound and the gas barrier properties of the gas barrier layer obtained. Dioxane. These organic hydrazine compounds may be used alone or in combination of two or more. The film forming gas may contain a reaction gas other than the material gas. As the reaction gas, a gas which reacts with the material gas to form an inorganic compound such as an oxide or a nitride can be appropriately selected. As the reaction gas for forming an oxide, for example, oxygen or ozone can be used. As the anti-φ gas to form a nitride, for example, nitrogen or ammonia can be used. These reaction gases may be used alone or in combination of two or more. For example, in the case of forming an oxynitride, a reaction gas for forming an oxide and a reaction gas for forming a nitride may be combined. As the film forming gas, in order to supply the material gas into the vacuum chamber, a carrier gas can be used as needed. As the film forming gas, a discharge gas can be used as needed in order to generate a discharge. As such a carrier gas and a discharge gas, a suitable one can be used. For example, a rare gas such as helium, argon, helium or neon or hydrogen may be used to carry the gas for gas or discharge. In the case where the film forming gas contains the material gas and the reaction gas, the ratio of the material gas to the reaction gas is not excessively proportional to the ratio of the amount of the reaction gas theoretically required for the complete reaction of the material gas and the reaction gas. ideal. By appropriately controlling the ratio of the reaction gas, a gas barrier layer which satisfies the above conditions (i), (ii) and (iii) can be formed particularly efficiently. In the case where the film forming gas contains the organic compound and oxygen, the amount of oxygen in the film forming gas is preferably less than the theoretical amount of oxygen required for the complete oxidation of the organic cerium compound in the film forming gas. In the following, as the film forming gas, a gas containing hexamethyldioxane (organoantimony compound: HMDSO: (CH3)6Si2::) as a source gas and oxygen (〇2) as a reaction gas can be used. In the case of the 矽-oxygen gas barrier layer, an example of the ratio of the source gas to the reaction gas in the film forming gas will be described in detail. A film-forming gas containing hexamethylene dioxane (HMDS0, φ (CHAShO) as a source gas and oxygen (〇2) as a reaction gas is reacted by plasma CVD to produce a bismuth-oxygen gas. In the case of the barrier layer, in the film forming gas, the reaction represented by the following reaction formula (3): (CH3)6Si2〇+12〇2-^6C〇2+9H2〇+2Si〇2 (3) is caused, The formation of cerium oxide. In this reaction, the theoretical amount of oxygen required for complete oxidation of 1 mole of hexamethylene dioxane is 12 moles. Therefore, in the film forming gas, 1 mole of hexamethylene In the case of a siloxane, the oxygen containing more than 12 moles is completely reacted to form a uniform cerium oxide. In this case, it is impossible to form a gas barrier layer that satisfies the above conditions (i) to (iii) 30 323545 201228842 gas barrier layer. Therefore, when the gas barrier layer of the present embodiment is formed, 'the reaction of the above formula (3) is not completely performed, and the amount of oxygen is less for 1 mol of hexamethyldiazepine. The stoichiometric ratio of 12 moles is ideal. The actual plasma CVD chamber reaction is considered as the raw material of six The oxygen of the base gas and the reaction gas is supplied as a film from the gas supply portion toward the film formation region, even if the oxygen content (flow rate) of the reaction gas is the raw material of hexamethyldioxane. The ear volume (flow rate) is 12 times the molar 1 (flow rate). In reality, the reaction cannot be completely performed. The oxygen is excessively supplied in excess of the stoichiometric ratio, and the reaction is completed at the beginning. For example, in order to completely oxidize by the CVD method. The cerium oxide is obtained, and the molar amount (flow rate) of oxygen is also 20 times or more of the molar amount (flow rate) of the hexamethyldioxane of the raw material. Therefore, the hexamethyldifluorene of the raw material is obtained. The molar amount (flow rate) of oxygen in terms of the molar amount (flow rate) of oxygen is preferably 12 times or less (more preferably 1 G times or less) of the stoichiometric ratio, because the film forming gas contains such a Compared with hexamethyl-di Weiyuan and oxygen, the hexamethylene-monoxide-burning towel has no fully oxidized %1 atom and hydrogen atom in the gas barrier layer. As a result, it can form a condition that satisfies the above conditions (1) to (iii). Gas barrier layer Good gas barrier properties and buckling resistance of the obtained first film. When the amount of oxygen (flow rate) of oxygen in the film formation gas is too small for hexamethyldioxanthine, there is no excess of hydrogen atoms which are oxidized. Into the gas barrier layer. In this case, the gas barrier layer of the layer is used as a device such as an organic EL device and an organic field-correcting electrode. (4) From such a viewpoint, the film-forming gas is in the form of a ruthenium-based group. The amount of Mo's soil burned by two money (flow 323545 201228842

於如此的電製、j_ 置C;’ILl)為比六曱基二梦氧燒之莫支量較理想，多0.5倍之量更理想。力C真空度）’可依據原料氣體的種類〇· IPa至50Pa的範圍。In such an electric system, j_set C; 'ILl) is more desirable than the amount of hexahydrogen oxymethane, and more preferably 0.5 times more. The force C vacuum degree) can depend on the type of the material gas 〇·IPa to 50 Pa.

施加電力未達上塊下 "& —在成膜滾輪31及32間放電力超過上述上_，成料產生的熱材表面的溫度上升。溫度上升時，基材因熱而受膜時產生皺紋的可能性。因狀況而異，因熱使薄膜炫解，露出成膜滾輪，成膜滾輪間產生大電流的放電，成膜滾輪度生用電源51之電極鼓（於本實施態及32)之電力，依據原料氣體的種類等適當調整，較理想為〇. 1至1〇kw。限時’有容易產生粒子之傾向，施加本體可能損傷。基材6的運送速度（線速度），可依據原料氣體的種類 φ 及真空腔體内的壓力等適當調整，〇· 1至100 m/分較理想， 0. 5至20 m/分更理想。線速度未達前述下限時，有起因於熱之薄膜產生皺紋之傾向，線速度超過前述上限時，所形成的氣體阻隔層之厚度有變薄的傾向。 (第2薄膜）如前述之第2薄膜，於從有機EL元件射出的光通過第 2薄膜射出至外界的情況，必須為藉由顯示光透過性的構件所形成。於該情況，與第1薄膜同樣地，具有第2氣體阻隔層較理想。關於一實施態樣的第2薄膜，含有矽原子、 32 323545 201228842 氧原子及碳原子，該第2氣體阻隔層之矽分佈曲線、氧分佈曲線及破分佈曲線滿足上述條件⑴至（iu)。該第2氣體阻隔層，可藉由與第1薄膜之氣體阻隔層相同的方法形 2 °第2氣體m隔層’可具有與第1薄膜之氣體阻隔層完王相同之構成，只要氧分佈曲線及碳分佈曲線滿足條件（i) 至（ill)，可具有不同於第i薄膜之氣體阻隔層之構成。 (有機EL元件） φ 然後’說明有機EL元件之構成。關於本實施態樣之有機EL元件，在第！薄膜與第2薄膜貼合之步驟前，形成於第2薄膜或第1薄膜上。、關於本實施態樣之有機EL元件，具有陽極與陰極所構成的對電極、⑨置於該電極間之發光層、設置於該電極間之電子注入層。於一對電極間，除發光層及電子注入層卜依據扃要可设置既定的層❶發光層不限於！層，可設置複數層。關於本實施態樣之有機EL A件，於發光層與陰 • 極間’具備電子注入層。作為設置於陰極與發光層間之層，例如電子注入層、電子傳輪層及電洞阻隔層等。於陰極與發光層間設置電子注入層及電子傳輸層兩者之情況，連接陰極的層稱為電子 '主入層，除該電子注入層之層，稱為電子傳輸層。電子注入層，具有改善從陰極的電子注入效率之功月t*。電子傳輸層具有從連接陰極侧表面的層之電子注入之功旎。電洞阻隔層，具有阻止電洞的傳輸之功能。電子注入層及/或電子傳輸層具有阻止電洞的傳輸之功能的情 33 323545 201228842 況，該些層可兼作為電洞阻隔層。電洞阻隔層具有阻止電洞的傳輸之功能，例如可製作只流過電洞電流之元件，基於該電流值的減少而確認。作為設置於陽極與發光層間之層，例如電洞注入層、電洞傳輸層及電子阻隔層等。於陽極與發光層間設置電洞注入層及電洞傳輸層兩者之情況，連接陽極的層稱為電洞注入層，除該電洞注入層之層，稱為電洞傳輸層。電洞注入層，具有改善從陽極的電洞注入效率之功 ® 能。電洞傳輸層具有從連接陽極側表面的層之電洞注入之功能。電子阻隔層，具有阻止電子的傳輸之功能。電洞注入層及/或電洞傳輸層具有阻止電子的傳輸之功能的情況，該些層可兼作為電子阻隔層。電子阻隔層具有阻止電子的傳輸之功能，例如可製作只流過電子電流之元件，基於該電流值的減少而確認。電子注入層及電洞注入層總稱為電荷注入層，電子傳 ^ 輸層及電洞傳輸層總稱為電荷傳輸層。本實施態樣的有機EL元件可具有的層構成之一例，表示如下0 a) 陽極/電洞注入層/發光層/電子注入層/陰極 b) 陽極/電洞注入層/發光層/電子傳輸層/電子注入層/陰極 c) 陽極/電洞注入層/電洞傳輸層/發光層/電子注入層/陰極 d) 陽極/電洞注入層/電洞傳輸層/發光層/電子傳輸層/電 34 323545 201228842 子注入層/陰極 e) 陽極/發光層/電子注入層/陰極 f) 陽極/發光層/電子傳輸層/電子注入層/陰極 (此處’記號「/」表示挾夾記號「/」間記載的2層為鄰接積層。以下相同。）本實施態樣的有機EL元件可具有2層以上的發光層。上述a)至f)的層構成中任一者，挾夾陽極與陰極之積層體為「構成單το A」，作為具有2層發光層的有機El元件之構成，例如下述g)所示的層構成。2個（構成單元A)的層構成可為相同，亦可為相異。 g) 陽極/(構成單元A)/電荷產生層/(構成單元A)/陰極「（構成單元A)/電荷產生層」為「構成單元B」時，作為具有3層以上的發光層的有機EL元件之構成，例如下述h)所示的層構成。 h) 陽極/(構成單元B)x/(構成單元A)/陰極 • 記號「x」表示2以上的整數，（構成單元B)x表示由χ 段積層之構成單元Β所構成的積層體。複數的（構成單元 Β)的層構成，可為相同，亦可為相異。所謂電荷產生層，係指藉由施加電場產生電洞與電子之層。作為電荷產生層，例如包含氧化釩、銦錫氧化物 (Indium Tin 〇Xide :簡稱為no)及氧化鉬等的薄膜。積層的層之順序、數目及各層的厚度，考慮發光效率及元件壽命’可適當設定。然後，更具體地說明構成有機EL元件之各層的材料及 323545 35 201228842 形成方法。〈陽極〉於具有從發光層發出的光通過陽極射出至外部之構成的有機EL元件的情況，使用顯示光透過性的電極作為陽極。作為顯示光透過性的電極，可使用金屬氧化物、金屬硫化物及金屬等的薄膜’適合使用導電度及光透過率高之電極。具體地’使用包含氧化銦、氧化鋅、氧化锡、ΙΤ0、銦鋅氧化物（Indium Zinc oxide :簡稱為ιζο)、金、始、 ® 銀及銅等的薄膜。該些之中適合使用ΙΤΟ、ΙΖ0或氧化錫所成的薄膜。作為陽極的製作方法，例如真空蒸鎪法、濺鎪法、離子鑛法及電鑛法等。而且，作為該陽極，亦可使用聚本胺或其衍生物、聚》塞吩或其衍生物等的有機透明導電膜。陽極的膜厚，可考慮要求的特性及步驟的簡易度而適當地設定，例如為l〇nm至l〇jam，較理想為2〇nm至丄以瓜， φ 更理想為50nm至500nm。〈電洞注入層〉作為構成電洞注入層之電洞注入材料，例如氧化釩、氧化鉬、氧化釕及氧化鋁等的氧化物、苯基胺系化合物、星暴型胺化合物、酞青（phthalocyanine)系、非晶質碳、聚苯胺及聚嗔吩衍生物等。作為電洞’主入層的成膜方.法，例如可從含有電洞注入材料的溶液成膜。例如藉由既定的塗佈法，塗佈含有電洞注入材料的溶液而成膜，藉由固化所成膜的溶液，可形成 323545 36 201228842 電洞注入層。作為從溶液成膜所使用之溶劑，只要是可溶解電洞注入材料者，無特別限制，可列舉三氯曱烷、二氯甲烷及二氯乙烷等氯系溶劑，四氫呋喃等醚系溶劑，曱笨及二曱苯等^香族經系溶劑，丙酮及曱基乙基酮等酮系溶劑，乙酸乙酉曰乙酸丁酯及乙酸乙赛路蘇（ethyl cellosolve acetate)等酯系溶劑及水。The application of electric power does not reach the upper block "& - the electric discharge between the film forming rollers 31 and 32 exceeds the above upper _, and the temperature of the surface of the hot material generated by the material increases. When the temperature rises, the substrate may be wrinkled when it is exposed to heat. Depending on the situation, the film is dissipated by heat, the film forming roller is exposed, and a large current is generated between the film forming rollers, and the electric power of the electrode drum of the film forming roller power source 51 (in the present embodiment and 32) is based on The type of the material gas is appropriately adjusted, and it is preferably from 1 to 1 〇 kw. There is a tendency to produce particles in a limited time, and the application of the body may be damaged. The transport speed (linear velocity) of the substrate 6 can be appropriately adjusted depending on the type of the material gas φ and the pressure in the vacuum chamber, and is preferably from 1 to 100 m/min, more preferably from 0.5 to 20 m/min. . When the linear velocity does not reach the above lower limit, there is a tendency that wrinkles are caused by the hot film. When the linear velocity exceeds the above upper limit, the thickness of the gas barrier layer formed tends to be thin. (Second film) When the light emitted from the organic EL element is emitted to the outside through the second film, the second film must be formed by a member that exhibits light transmittance. In this case, it is preferable to have the second gas barrier layer in the same manner as the first film. The second film according to an embodiment contains a ruthenium atom, an oxygen atom of 32 323545 201228842, and a carbon atom. The enthalpy distribution curve, the oxygen distribution curve, and the broken distribution curve of the second gas barrier layer satisfy the above conditions (1) to (iu). The second gas barrier layer can be formed in the same manner as the gas barrier layer of the first film, and the second gas m barrier layer can have the same structure as the gas barrier layer of the first film, as long as the oxygen distribution The curve and the carbon distribution curve satisfy the conditions (i) to (ill) and may have a composition different from the gas barrier layer of the i-th film. (Organic EL element) φ Then, the configuration of the organic EL element will be described. Regarding the organic EL element of this embodiment, in the first! The film is formed on the second film or the first film before the step of bonding the film to the second film. The organic EL device of the present embodiment has a counter electrode composed of an anode and a cathode, a light-emitting layer interposed between the electrodes, and an electron injecting layer provided between the electrodes. Between the pair of electrodes, except for the luminescent layer and the electron injecting layer, a predetermined layer of luminescent layer can be set according to the enthalpy; Layer, you can set multiple layers. In the organic EL A device of the present embodiment, an electron injecting layer is provided between the light-emitting layer and the cathode. As a layer provided between the cathode and the light-emitting layer, for example, an electron injection layer, an electron transport layer, a hole barrier layer, or the like. In the case where both the electron injecting layer and the electron transporting layer are provided between the cathode and the light emitting layer, the layer connecting the cathode is referred to as an electron 'primary layer, and the layer other than the electron injecting layer is referred to as an electron transporting layer. The electron injecting layer has a function of improving the electron injection efficiency from the cathode. The electron transport layer has a function of electron injection from a layer connecting the cathode side surfaces. The hole barrier layer has the function of preventing the transmission of the hole. The electron injection layer and/or the electron transport layer have the function of preventing the transmission of holes 33 323545 201228842, these layers can also serve as a hole barrier layer. The hole barrier layer has a function of preventing the transmission of the hole. For example, an element through which only the hole current flows can be produced, and it is confirmed based on the decrease in the current value. As a layer provided between the anode and the light-emitting layer, for example, a hole injection layer, a hole transport layer, an electron blocking layer, and the like. In the case where both the hole injection layer and the hole transport layer are provided between the anode and the light-emitting layer, the layer connected to the anode is referred to as a hole injection layer, and the layer other than the hole injection layer is referred to as a hole transport layer. The hole injection layer has the ability to improve the efficiency of hole injection from the anode. The hole transport layer has a function of injecting holes from a layer connecting the anode side surfaces. An electronic barrier layer that has the function of blocking the transmission of electrons. The hole injection layer and/or the hole transport layer have a function of preventing the transmission of electrons, and the layers can also serve as an electron blocking layer. The electron blocking layer has a function of blocking the transmission of electrons, for example, an element through which only an electron current flows can be produced, and is confirmed based on the decrease in the current value. The electron injection layer and the hole injection layer are collectively referred to as a charge injection layer, and the electron transport layer and the hole transport layer are collectively referred to as a charge transport layer. An example of the layer constitution which the organic EL element of the present embodiment can have is as follows: 0 a) anode/hole injection layer/light-emitting layer/electron injection layer/cathode b) anode/hole injection layer/light-emitting layer/electron transmission Layer/electron injection layer/cathode c) anode/hole injection layer/hole transport layer/light-emitting layer/electron injection layer/cathode d) anode/hole injection layer/hole transport layer/light-emitting layer/electron transport layer/ Electricity 34 323545 201228842 Sub-injection layer / cathode e) Anode / luminescent layer / electron injection layer / cathode f) Anode / luminescent layer / electron transport layer / electron injection layer / cathode (here 'mark " / " indicates 挟 clip symbol " The two layers described in the above are adjacent layers. The same applies to the following. The organic EL device of the present embodiment may have two or more light-emitting layers. In any one of the layer configurations of the above a) to f), the laminated body in which the anode and the cathode are sandwiched is "constituted single το A", and the organic EL element having two light-emitting layers is configured, for example, as shown in the following g) Layer composition. The layer composition of the two (constituting unit A) may be the same or different. g) When the anode/(composition unit A)/charge generation layer/(constitution unit A)/cathode "(constitution unit A)/charge generation layer" is "constitution unit B", it is organic as having three or more light-emitting layers The composition of the EL element is, for example, a layer configuration shown in the following h). h) Anode/(Structural unit B)x/(Structural unit A)/Cathode • The symbol "x" represents an integer of 2 or more, and (Structure unit B) x represents a layered body composed of the constituent elements of the stack of layers. The layer composition of the plural (constituting unit Β) may be the same or different. The charge generation layer refers to a layer in which holes and electrons are generated by application of an electric field. The charge generating layer includes, for example, a film of vanadium oxide, indium tin oxide (indium tin 〇Xide: abbreviated as no), and molybdenum oxide. The order and number of layers to be laminated and the thickness of each layer can be appropriately set in consideration of luminous efficiency and element life. Then, the materials constituting the respective layers of the organic EL element and the method of forming 323545 35 201228842 will be more specifically described. <Anode> In the case of an organic EL device having a structure in which light emitted from the light-emitting layer is emitted to the outside through the anode, an electrode exhibiting light transmittance is used as an anode. As the electrode for exhibiting light transmittance, a film of a metal oxide, a metal sulfide or a metal can be used. It is suitable to use an electrode having high conductivity and high light transmittance. Specifically, a film containing indium oxide, zinc oxide, tin oxide, antimony oxide, indium zinc oxide (Indium Zinc oxide: abbreviated as ιζο), gold, SiO, and silver is used. Among these, a film made of ruthenium, osmium or tin oxide is suitably used. Examples of the method for producing the anode include a vacuum distillation method, a sputtering method, an ion ore method, and an electric ore method. Further, as the anode, an organic transparent conductive film such as polyamine or a derivative thereof, or a poly(exepene or a derivative thereof) can be used. The film thickness of the anode can be appropriately set in consideration of the required characteristics and the ease of the steps, for example, from 1 〇 nm to l〇jam, more preferably from 2 〇 nm to 丄, and φ is more preferably from 50 nm to 500 nm. <Cell injection layer> As a hole injection material constituting the hole injection layer, for example, an oxide such as vanadium oxide, molybdenum oxide, ruthenium oxide, or aluminum oxide, a phenylamine compound, a starburst amine compound, or indigo ( Phthalocyanine), amorphous carbon, polyaniline, polybenzaldehyde derivatives, and the like. As a film forming method of the main hole of the hole, for example, a film can be formed from a solution containing a hole injecting material. For example, a solution containing a hole injecting material is applied by a predetermined coating method to form a film, and by solidifying the film-formed solution, a hole injection layer of 323545 36 201228842 can be formed. The solvent to be used for the film formation from the solution is not particularly limited as long as it is a material capable of dissolving the hole injection material, and examples thereof include a chlorine solvent such as trichlorosilane, dichloromethane or dichloroethane, and an ether solvent such as tetrahydrofuran.香及 and diterpenal benzene and other fragrant solvent, ketone solvent such as acetone and mercaptoethyl ketone, butyl acetate acetate and ethyl cellosolve acetate and other ester solvents and water.

作為塗佈法，可列舉旋轉塗佈法、鑄膜法、微凹版塗 =法、凹版塗佈法、棒塗法、滾輪塗佈法、線棒塗佈法、塗噴塗法、網版印刷法、膠版印刷法、平版印刷法及喷墨印刷法等。 ★電/同注入層的膜厚，可考慮要求的特性及步驟的簡易度等而適當地設^ ’例如為lnm至丨_，較理想為2⑽至 500nm ’更理想為5nm至2〇〇nm。〈電洞傳輸層〉作為構成電洞傳輸層之電洞傳輸材料，例如聚乙稀基吐或其何生物、聚魏或其衍生物、侧鏈或主鏈具有芳氧_勿，琳(pyraz〇Une)衍生物、 ==生物、二苯乙稀衍生物、三苯基二胺衍生物、 t讀或其衍生物、聚料或其魅物街生物、聚料或其衍生物 ^基胺土伸乙稀基）（poly(2, 5-thienylenevinylene))或其衍生物等。該些之中，作為電洞傳輸材料，例如聚乙稀基味唾或 323545 37 201228842 其衍生物、聚矽烷或其衍生物、側鏈或主鏈具有芳香族胺之聚矽氧烷衍生物、聚苯胺或其衍生物、聚噻吩或其衍生物、聚芳香基胺或其衍生物、聚（對-伸苯基伸乙烯基） (polyphenylenevinylene)或其衍生物及聚（2, 5-伸養吩基伸乙烯基）（p〇ly(2, 5-thienylenevinylene))或其衍生物Examples of the coating method include a spin coating method, a cast film method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a bar coating method, a coating method, and a screen printing method. , offset printing method, lithography method, and inkjet printing method. ★ The film thickness of the electric/injection layer can be appropriately set in consideration of the required characteristics and the ease of the steps, etc., for example, from 1 nm to 丨_, more preferably from 2 (10) to 500 nm, more preferably from 5 nm to 2 〇〇 nm. . <Cell transport layer> As a hole transport material constituting the hole transport layer, for example, polyethylene thiophene or its organism, poly-Wei or its derivatives, side chain or main chain has aryl oxygen_Do, Lin (pyraz 〇Une) derivative, == biological, diphenylethylene derivative, triphenyldiamine derivative, t-read or its derivative, polymer or its fascinating street organism, polymer or its derivative (poly(2, 5-thienylenevinylene)) or a derivative thereof. Among these, as a hole transporting material, for example, a polyethylene-based saliva or a derivative thereof, 323545 37 201228842, a polydecane or a derivative thereof, a polyoxyalkylene derivative having an aromatic amine in a side chain or a main chain, Polyaniline or a derivative thereof, polythiophene or a derivative thereof, polyarylamine or a derivative thereof, poly(phenylenevinylene) or a derivative thereof, and poly(2,5-extended phenanthrene) P〇ly(2, 5-thienylenevinylene) or its derivatives

等的高分子電洞傳輸材料較理想。更理想的電洞傳輸材料為聚乙烯基咔唑或其衍生物、聚矽烷或其衍生物及側鏈或主鏈具有芳香族胺之聚矽氧烧衍生物。於低分子的電洞傳輸材料之情況，較理想為分散於高分子黏結劑使用。作為電洞傳輸層的成膜方法，無特別限制，於低分子電洞傳輸材料，例如從含有高分子黏結劑及電洞傳輸材料之混s液成膜，於咼分子電洞傳輪材料，例如從含有電洞傳輸材料的溶液成膜。作為從溶液成膜所使用的溶劑，只要是可溶解電洞傳輸材料者’無特別限制，可列舉三氯曱院、二氣甲烧及二 =等氯系溶劑’四氫呋喃等醚系溶劑，甲苯及二甲苯 t香族烴系溶劑’丙酮及甲基乙基嗣等酮系溶劑，乙酸乙二乙酸丁醋及乙酸乙赛路蘇(e_ —oh acetate)等酯系溶劑等。膜法成膜之方法，例如與前述電洞注入層的成膜沄相同的塗佈法。電行輸材料組合之高分子黏結劑，以極度不阻礙理想’而且適合使用對可見光吸收弱者。該 I。劑，例如可選自聚碳_旨、聚丙烯酸醋、聚丙 323545 38 201228842 旨、聚甲基丙稀酸甲醋、聚苯乙埽、聚氯⑽及聚電洞傳輪層的厚度，隨所使用的材料而有不同的最佳 f，適當岐使_電壓及❹效率成為適#的值。電洞二須具有至少不產生孔洞之厚度。太厚時，元件 ^ 〜，所以’該電洞傳輸層的厚度，例如為Inm 較理想為2nm至500nm’更理想為—至2〇_。〈發光層〉 ^要由發Λ螢光及/或嶙光的有機物（發光機物與輔助其之摻雜物所形成。摻雜物例如為古Μ:1 ί效率或改變發光波長而添加。包含於發光層的有機物可為低分子化合物，亦可為高分子化合物。因一般 :低分子對溶劑的溶解性高之高分子化合物，適合用於塗 ’法’X光層包含〶分子化合物較理想。發光詹為包含聚本乙婦換算的數平均分子量為1()3至1Q8之高分子化合物較理想。作為構成發光層之發紐料，例如可列舉以下素系材料、金屬錯合㈣材料、高分子系材料及摻雜物材 (色素系材料）作為色素系材料，例如可列舉環噴達明 (cy^lopendamine)衍生物、四苯基丁二烯衍生物化合物、三苯基胺衍生物、噁二唑（oxadiaz〇le)衍生物、吡唑喹咻 (pyrazoloquinoline)衍生物、二笨乙烯基苯衍生物、二笨乙烯基伸芳基衍生物、吡咯衍生物、噻吩環化合物、吡= 323545 39 201228842 環化合物、紫環酮（Perinone)衍生物、茈（perylene)衍生物、寡聚噻吩衍生物、噁二唑二聚物、吡唑啉（pyrazoline) 二聚物、喹吖啶酮（quinacridone)衍生物及香豆素 (coumarin)衍生物等。 (金屬錯合物系材料）作為金屬錯合物系材料，例如可列舉具有從Tb、Eu及 Dy等稀土族金屬以及Al、Zn、Be、Ir及Pt等中選擇之中心金屬，以及從噁二唑、嗟二唑、苯基°比咬、苯基苯并咪 • 唑及喹啉構造等選擇之配位子的金屬錯合物。例如，選自銥錯合物及鉑錯合物等具有從三重態激發狀態發光之金屬錯合物、紹0i琳錯合物、苯并嘻琳鈹錯合物、苯并喔唾 (benzoxazolyl)鋅錯合物、苯并嗟吐鋅錯合物、重氮甲基鋅錯合物、聚卟啉（polyporphyrin)鋅錯合物及啡琳 (phenanthroline)销錯合物。 (高分子系材料） φ 作為高分子系材料，可列舉聚對伸苯基伸乙烯基衍生物（polyparaphenylenevinylene)、聚嗟吩衍生物、聚對伸苯基（polyparaphenylene)衍生物、聚矽烷衍生物、聚乙炔衍生物、聚第（p〇lyfluorene)衍生物、聚乙烯基咔唑衍生物、上述色素系材料或金屬錯合物系發光材料經高分子化的材料等。上述發光性材料中’作為藍色發光之材料，可列舉二笨乙烯基伸芳基衍生物、°惡二^(oxadiazole)衍生物及該些的聚合物、聚乙烯基咔唑衍生物、聚對伸苯基 323545 40 201228842 (polyparaphenylene)衍生物及聚第（p〇lyf iuorene)衍生物等。其中，高分子材料之聚乙烯基味嗤衍生物、聚對伸苯基衍生物及聚苐衍生物等較理想。作為綠色發光之材料’可列舉哇。丫咬嗣（qU i nacr i done ) 衍生物、香豆素（coumarin)衍生物及該些的聚合物、聚對伸本基伸乙烯基（polyparaphenylenevinylene)衍生物及聚S(polyfluorene)衍生物等。其中，以高分子材料之聚 • 對伸苯基伸乙烯基衍生物及聚苐衍生物等較理想。作為紅色發光之材料，可列舉香豆素（c〇umarin)衍生物、噻吩環化合物及該些的聚合物、聚對伸苯基伸乙烯基衍生物、聚噻吩衍生物及聚苐衍生物等。其中，以高分子材料之聚對伸苯基伸乙烯基衍生物、聚噻吩衍生物及聚薙衍生物等較理想。作為白色發光之材料，可使用上述藍色、綠色、紅色的各色發光材料現合者、以成為各色發光的材料之成分為 φ早體，將其聚合之聚合物作為其材料。而且，分別使用各色發光的材料所形成的發光層積層，亦可實現整體發出白色光之元件。 (摻雜物材料）作為捧雜物材料，例如可列舉茈（perylene)衍生物、香豆素（coumarin)衍生物、紅螢衍生物、啥0丫 β定嗣衍生物、+ & / 初方酸（squarylium)衍生物、聚卟淋. (polyporphyrin)衍生物、苯乙烯系色素、並四苯 (racene)衍生物、吼嗤琳g同（pyraz〇i〇ne)衍生物、十環 41 323545 201228842 烯（decacyclene)衍生物及吩噁嘹酮（phen〇xaz〇ne)等。發光層的厚度’通常約為2nm至200nm。〈發光層的成膜方法〉作為發光層的成膜方法，可使用塗佈包含發光材料之溶液的方法、真空蒸鍍法及轉印法等。作為從溶液成膜所使用的溶劑，可列舉與從溶液使電洞注入層成膜時所使用的前述的溶劑為相同的溶劑。作為塗佈包含發光材料之溶液的方法，可列舉旋轉塗 •佈法、鑄膜法、微凹版塗佈法、凹版塗佈法、棒塗法、滾輪塗佈法、線棒塗佈法、浸塗法、狹縫塗佈法、毛細管塗佈法、噴塗法及噴嘴塗佈法等塗佈法、以及凹版印刷法、網版印刷法、膠版印刷法、平版印刷法、反轉印刷法及喷墨印刷法等印刷法。以容易形成圖形及多色分別塗佈之點’較理想為凹版印刷法、網版印刷法、膠版印刷法、平版印刷法、反轉印刷法及喷墨印刷法等印刷法。於顯示昇 φ 華性的低分子化合物之情況，可使用真空蒸鍍法。可使用藉由雷射之轉印或熱轉印，只在所期望的部分形成發光層之方法。〈電子傳輸層〉作為構成電子傳輸層之電子傳輸材料，可使用通常所使用的材料，可列舉°惡二唾（oxadiazole)衍生物、蒽酿二甲烧或其衍生物、苯醌或其衍生物、萘醌或其衍生物.、蒽酿或其衍生物、四氰蒽醌二甲烷或其衍生物、第（f丨u 0 r e n e ) 衍生物、二苯基二氰基乙烯或其衍生物、二苯醌衍生物或 42 323545 201228842 8-羥基喹啉或其衍生物的金屬錯合物、聚喧琳或其衍生物、聚喹噚啉（polyquinoxaline)或其衍生物及聚苐 (polyfluorene)或其衍生物等。該些之中，作為電子傳輸材料，以噁二唑（〇xadiaz〇le) 讨生物、本酿或其竹生物、蒽酿j或其衍生物、或經基啥啉或其衍生物的金屬錯合物、聚喹啉或其衍生物、聚喹噚啉（polyquinoxal ine)或其衍生物及聚 g (p〇lyf lu〇rene) 或其衍生物較理想’以2-(4-聯苯基）__5__(4_第3 丁基苯基） _1，3’4-噁二唑、苯醌、蒽醌、三（8_喹啉基）鋁及聚喹啉更理想。作為電子傳輸層的成膜法，無特別限制。於低分子的電子傳輸材料之情況，可列舉從粉末的真空蒸鐘法或從溶液或熔融狀態的成膜，於高分子的電子傳輪材料之情況，可列舉從溶液或溶融狀態的成膜。於從溶液或溶融狀態的成膜之情況，可併用高分子黏結劑。作為從溶液使電子傳 φ 輸層成膜的方法，可列舉與前述從溶液使電洞注入層成膜之方法相同的成臈法。電子傳輸層的厚度，隨所使用的材料而有不同的最佳值，適當設定使驅動電壓及發光效率成為適當的值。電子傳輪層，必須具有至少不產生孔洞之厚度，太厚時，元件的驅動電壓變高。所以，該電子傳輸層的厚度，例如為lnm 至1/im’較理想為2nm至50〇nm，更理想為5咖至200nm。〈電子注入層〉電子注入層包含離子性聚合物。作為構成電子注入層 323545 43 201228842 之離子性聚合物，例如可列舉包含具有選自下述式（1)所示的基與下述式（2)所示的基所成群的1種以上的基之構造單元的聚合物。作為離子性聚合物之一實施態樣，可列舉具有選自式（1)所示之基以及式（2)所示之基所成群的1種以上的基之構造單元，在全部構造單元中包含15莫耳％至 100莫耳％之聚合物。一（GP) η1-γι (N/P) a, (ZM b1 (1 )Such polymer hole transport materials are ideal. More preferably, the hole transporting material is polyvinylcarbazole or a derivative thereof, polydecane or a derivative thereof, and a polyoxygenated derivative having an aromatic amine in a side chain or a main chain. In the case of a low-molecular hole transporting material, it is preferably dispersed in a polymer binder. The film forming method of the hole transport layer is not particularly limited, and the low molecular hole transport material is formed, for example, from a mixed liquid containing a polymer binder and a hole transport material, and a molecular hole transport material. For example, a film is formed from a solution containing a hole transporting material. The solvent to be used for film formation from a solution is not particularly limited as long as it is a material capable of dissolving a hole transporting material, and examples thereof include an ether solvent such as trichloromethane, a gas-fired product, and a chlorine-based solvent such as tetrahydrofuran. And a xylene t-aromatic hydrocarbon solvent, a ketone solvent such as acetone or methyl ethyl hydrazine, an ester solvent such as acetic acid ethaneacetic acid butyl vinegar or ethyl acetate (e_ oh acetate). The method of film formation by a film method is, for example, the same coating method as the film formation of the above-mentioned hole injection layer. The polymer binder of the electric transmission material combination is extremely unobstructed and ideal for use in the weak absorption of visible light. The I. The agent may, for example, be selected from the group consisting of polycarbonate, polyacrylic acid vinegar, polypropylene 323545 38 201228842, polymethyl methacrylate methyl vinegar, polystyrene acetal, polychlorinated (10) and polyelectrolyte transfer layer thickness. The materials used have different optimum f, and the _voltage and enthalpy efficiency are appropriately adjusted to the value of #. The hole must have a thickness that does not at least create a hole. When it is too thick, the element ^ 〜, so the thickness of the hole transport layer, for example, Inm is preferably 2 nm to 500 nm', more preferably - 2 Å. <Light-emitting layer> ^ It is formed by a fluorescent material and/or a light-emitting organic substance (a luminescent object and a dopant which assists it). The dopant is added, for example, to an efficiency of 1 ί or to change an emission wavelength. The organic substance contained in the light-emitting layer may be a low molecular compound or a high molecular compound. Generally, a polymer compound having a low molecular solubility in a solvent is suitable for coating a 'method' of an X-ray layer containing a ruthenium compound. It is preferable that the light-emitting material is a polymer compound having a number average molecular weight of 1 () 3 to 1 Q8 in terms of a poly-methylene group. Examples of the hair-forming material constituting the light-emitting layer include the following elemental materials and metal mismatches (IV) Materials, polymer materials, and dopant materials (pigment materials) Examples of the pigment materials include cy^lopendamine derivatives, tetraphenylbutadiene derivative compounds, and triphenylamine derivatives. , oxadiaz〇le derivative, pyrazoloquinoline derivative, di-p-vinyl benzene derivative, di-p-vinyl extended-aryl derivative, pyrrole derivative, thiophene ring compound, pyridyl 32354 5 39 201228842 Ring compounds, Perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazoline dimers, quinacridones (quinacridone) derivative, coumarin derivative, etc. (metal complex material) Examples of the metal complex material include rare earth metals such as Tb, Eu, and Dy, and Al and Zn. a central metal selected from Be, Ir, and Pt, and a metal complex of a ligand selected from the group consisting of oxadiazole, oxadiazole, phenyl benzoate, phenylbenziazole, and quinoline structure For example, a metal complex having a luminescence from a triplet state, a ruthenium complex, a benzoxanthene complex, a benzoxazolyl, or a benzoxazolyl Zinc complex, benzoxazole zinc complex, diazomethyl zinc complex, polyporphyrin zinc complex and phenanthroline pin complex. φ As a polymer material, polyparaphenylen Evinylene), polyphenanthene derivative, polyparaphenylene derivative, polydecane derivative, polyacetylene derivative, p〇lyfluorene derivative, polyvinylcarbazole derivative, the above pigment The material or the metal complex-based luminescent material is a polymerized material, etc. Among the above luminescent materials, 'as a material for blue light emission, a diphenyl vinyl aryl derivative, an oxadiazole derivative can be cited. And the polymers, polyvinyl carbazole derivatives, polyparaphenylene 323545 40 201228842 (polyparaphenylene) derivatives and poly(p〇lyf iuorene) derivatives. Among them, a polyvinyl terpene derivative, a polyparaphenylene derivative, and a polyfluorene derivative of a polymer material are preferable. As a material for green light emission, wow is mentioned. U 嗣嗣 (qU i nacr i done ) derivatives, coumarin derivatives and such polymers, polyparaphenylenevinylene derivatives and poly S (polyfluorene) derivatives. Among them, polymer materials such as poly(p-phenylene) vinyl derivatives and polyfluorene derivatives are preferred. Examples of the red light-emitting material include a coumarin derivative, a thiophene ring compound, and a polymer, a polyparaphenylene vinylene derivative, a polythiophene derivative, and a polyfluorene derivative. Among them, a polyparaphenylene vinyl derivative, a polythiophene derivative, and a polyfluorene derivative of a polymer material are preferable. As a material for white light emission, a combination of the above-mentioned blue, green, and red light-emitting materials, a component of a material that emits light of each color, and a polymer obtained by polymerizing the same can be used as the material. Further, it is also possible to realize an element which emits white light as a whole by using a light-emitting layer formed of a material of each color. (Doping material) Examples of the dopant material include a perylene derivative, a coumarin derivative, a red fluorescein derivative, a quinone derivative, and a & Squarylium derivative, polyporphyrin derivative, styrene pigment, racene derivative, pyraz〇i〇ne derivative, ten ring 41 323545 201228842 Decacyclene derivatives and phenoxazoles (phen〇xaz〇ne). The thickness of the light-emitting layer is usually about 2 nm to 200 nm. <Method of Forming Light-Emitting Layer> As a film forming method of the light-emitting layer, a method of applying a solution containing a light-emitting material, a vacuum deposition method, a transfer method, or the like can be used. The solvent to be used for film formation from the solution is the same solvent as the solvent used in forming the film from the solution into the hole injection layer. Examples of the method of applying the solution containing the luminescent material include a spin coating method, a cast film method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a bar coating method, and a dipping method. Coating methods such as coating, slit coating, capillary coating, spray coating, and nozzle coating, and gravure, screen printing, offset printing, lithography, reverse printing, and spraying Printing method such as ink printing method. The printing method in which the pattern is easily formed and the color is applied separately is preferably a printing method such as a gravure printing method, a screen printing method, an offset printing method, a lithographic printing method, a reverse printing method, and an inkjet printing method. In the case of a low molecular compound exhibiting φ hua, a vacuum evaporation method can be used. A method of forming a light-emitting layer only in a desired portion by laser transfer or thermal transfer can be used. <Electron Transport Layer> As the electron transport material constituting the electron transport layer, a commonly used material can be used, and examples thereof include an oxadiazole derivative, a dimethyl alcohol or a derivative thereof, and a benzoquinone or a derivative thereof. , naphthoquinone or a derivative thereof, brewing or its derivative, tetracyanoquinodimethane or a derivative thereof, a (f丨u 0 rene ) derivative, diphenyldicyanoethylene or a derivative thereof , a diphenyl hydrazine derivative or a metal complex of 8- hydroxyquinoline or a derivative thereof, poly phthalocyanine or a derivative thereof, polyquinoxaline or a derivative thereof, and polyfluorene Or its derivatives and the like. Among these, as an electron transporting material, oxadiazole (〇xadiaz〇le) is used to discuss organisms, broth or its bamboo organisms, brewing j or its derivatives, or metal porphyrin or its derivatives. , polyquinoline or a derivative thereof, polyquinoxal ine or a derivative thereof, and poly g (p〇lyf lu〇rene) or a derivative thereof are preferably '2-(4-biphenyl) )__5__(4_3 butylphenyl) _1,3'4-oxadiazole, benzoquinone, anthracene, tris(8-quinolinyl)aluminum and polyquinoline are more desirable. The film formation method as the electron transport layer is not particularly limited. In the case of a low molecular electron transport material, a vacuum vaporization method from a powder or a film formation from a solution or a molten state may be mentioned. In the case of a polymer electron transport material of a polymer, film formation from a solution or a molten state may be mentioned. . In the case of film formation from a solution or a molten state, a polymer binder may be used in combination. As a method of forming a film of the electron transporting φ layer from a solution, the same method as the method of forming a film from the solution into the hole injection layer can be mentioned. The thickness of the electron transport layer has different optimum values depending on the materials used, and is appropriately set so that the driving voltage and the light-emitting efficiency become appropriate values. The electron transfer layer must have a thickness that does not at least create a hole. When it is too thick, the driving voltage of the element becomes high. Therefore, the thickness of the electron transport layer is, for example, from 1 nm to 1/im', preferably from 2 nm to 50 Å, more preferably from 5 to 200 nm. <Electron Injection Layer> The electron injection layer contains an ionic polymer. The ionic polymer constituting the electron injection layer 323545 43 201228842 includes, for example, one or more groups having a group selected from the group represented by the following formula (1) and a group represented by the following formula (2). The polymer of the building block. Examples of the embodiment of the ionic polymer include structural units having one or more groups selected from the group represented by the formula (1) and the group represented by the formula (2), and all the structural units. It contains from 15 moles to 100 mole% of polymer. One (GP) η1-γι (N/P) a, (ZM b1 (1 )

(式（1)中，Q1表示2價有機基；Y1表示-C(V、-S〇3_、-S(V w 或-P〇32_ ; Μ1表示金屬陽離子或具有或無取代基之銨陽離子；Ζ1 表示 Γ、Cl—、Br_、Γ、0ΙΓ、RaS(V、RaC00_、C10-、(In the formula (1), Q1 represents a divalent organic group; Y1 represents -C(V, -S〇3_, -S(V w or -P〇32_ ; Μ1 represents a metal cation or an ammonium cation having or without a substituent) ;Ζ1 means Γ, Cl—, Br_, Γ, 0ΙΓ, RaS (V, RaC00_, C10-,

Cl〇2' CUV、Cl〇4' SCN' cr、N〇3' SO，、HS〇4-、P〇43' ΗΡ0Λ、H2P〇4_、BFr或PF6' ; nl表示0以上的整數，al表示 1以上的整數，bl表示0以上的整數。但，以使式（1)所示的基之電荷為0的方式選擇al及bl〇Ra表示具有或無取代基之碳原子數1至30的烷基或具有或無取代基之碳原子數 φ 6至50的芳香基。Q1、M1及Z1分別為複數個的情況，可為相同，亦可為相異。） -(Q2) n2-Y2 (M2) a2 (Z2) b2 (2) (式（2)中， Q2表示2價有機基； Y2表示碳陽離子、錄陽離子、膦醯（phosphonyl)陽離子、績醢（sulfonyl)陽離子或蛾鑌（iodonium)陽離子；M2 表示 Γ、cr、Β〆、Γ、0Γ、RbS〇3_、RbC00_、CUT、CHV、 C1(V、C1(V、SCN-、CN、N(V、S〇42-、HSOr、P〇43-、ΗΡΟΛ、 44 323545 201228842 H2P(V、BFr或PFr; Z2表示金屬陽離子或具有或無取代基之銨陽離子；n2表示0以上的整數；a2表示1以上的整數， b2表示0以上的整數。但，以使式（2)所示的基之電荷為0 的方式選擇a2及b2。Rb表示具有或無取代基之碳原子數1 至30的烷基或具有或無取代基之碳原子數6至50的芳香基。Q2、M2及Z2分別為複數個的情況，可為相同，亦可為相異。）上述離子性聚合物，可更具有下述式（3)所示的基。式 ® (3)所示的基可包含於離子性聚合物的構造單元中。於該情況，具有式（3)所示的基之構造單元，可為包含與選自式（1) 所示之基以及式（2)所示之基所成群的1種以上的基之構造單元為相同的構造單元，亦可為其他的構造單元。作為離子性聚合物之一實施態樣，可列舉具有選自式（1)所示之基、式（2)所示之基以及式（3)所示之基所成群的至少1種之構造單元，在全部構造單元中包含15莫耳％至100莫耳％ ^ 之聚合物。 -(Q3) Π3-Υ3 (3) (式（3)中， Q3表示2價有機基；Y3表示-CN或式（4)、（5)、（6)、 (7)、（8)、（9)、（10)、（11)或（12)所示的基；n3 表示 0 以上的整數。一 Ο — ( R’ 0) a3—R’ ’ （4)Cl〇2' CUV, Cl〇4' SCN' cr, N〇3' SO, HS〇4-, P〇43' ΗΡ0Λ, H2P〇4_, BFr or PF6'; nl represents an integer greater than 0, and al represents An integer of 1 or more, and bl represents an integer of 0 or more. However, alk and bl〇Ra are selected such that the charge of the group represented by the formula (1) is 0, and the number of carbon atoms having 1 to 30 carbon atoms or having or not having a substituent is represented. An aromatic group of φ 6 to 50. When Q1, M1, and Z1 are plural, they may be the same or different. -(Q2) n2-Y2 (M2) a2 (Z2) b2 (2) (In the formula (2), Q2 represents a divalent organic group; Y2 represents a carbocation, a cation, a phosphonyl cation, (sulfonyl) cation or iodonium cation; M2 represents Γ, cr, Β〆, Γ, 0Γ, RbS〇3_, RbC00_, CUT, CHV, C1 (V, C1 (V, SCN-, CN, N ( V, S〇42-, HSOr, P〇43-, ΗΡΟΛ, 44 323545 201228842 H2P (V, BFr or PFr; Z2 represents a metal cation or an ammonium cation with or without a substituent; n2 represents an integer of 0 or more; a2 represents An integer of 1 or more, and b2 represents an integer of 0 or more. However, a2 and b2 are selected so that the charge of the group represented by the formula (2) is 0. Rb represents a carbon number of 1 to 30 with or without a substituent. An alkyl group or an aromatic group having 6 to 50 carbon atoms with or without a substituent. When Q2, M2 and Z2 are plural, respectively, they may be the same or different.) The above ionic polymer may be more The group represented by the following formula (3): The group represented by the formula (3) may be contained in the structural unit of the ionic polymer. In this case, the structure represented by the formula (3) The unit may be the same structural unit including one or more types of groups selected from the group represented by the formula (1) and the group represented by the formula (2), and may be other structural units. Examples of the ionic polymer include at least one selected from the group consisting of a group represented by the formula (1), a group represented by the formula (2), and a group represented by the formula (3). The structural unit contains 15 mol% to 100 mol% of the polymer in all the structural units. -(Q3) Π3-Υ3 (3) (In the formula (3), Q3 represents a divalent organic group; Y3 represents -CN or a group represented by formula (4), (5), (6), (7), (8), (9), (10), (11), or (12); n3 represents an integer of 0 or more一Ο — ( R' 0) a3—R' ' (4)

(5) 45 323545 201228842 -S -（R，S) a4-R，’ (6) -C (=0) - (R，一 C (=〇) ) a4—R’，⑺ 一C (=S) _ (R’ 一C (=s) ) a4—R’， (8) -N { (R，）a4R，，} 2 ⑻ -c (=0) o- (r’ -c (=0) 0) a4—R，，〇〇) -C (=0) O -（R’ 〇) “-R，’ (1 !) -NHC ( = 0) - (R* nhc (=〇) ) a4_R« > (1 2) (式(4)、（5)、（6)、（7)、（8)、（9)、（10)、（11)及(12)(5) 45 323545 201228842 -S -(R,S) a4-R,' (6) -C (=0) - (R, a C (=〇) ) a4—R',(7) A C (=S ) _ (R' - C (=s) ) a4 - R', (8) -N { (R,) a4R,,} 2 (8) -c (=0) o- (r' -c (=0) 0) a4—R,, 〇〇) -C (=0) O -(R' 〇) “-R,' (1 !) -NHC ( = 0) - (R* nhc (=〇) ) a4_R« > (1 2) (Formula (4), (5), (6), (7), (8), (9), (10), (11), and (12)

中，R’表示具有或無取代基之2價烴基，γ，表示氫原子、具有或無取代基之1價烴基、—C00H、-SOsH、-OH、-SH、 -NRc2、-CN 或-C(=0)NRc2 表示具有或無取代基之3價烴基，a3表示1以上的整數，a4表示〇以上的整數，rc 表示具有或無取代基之碳原子數丨至3()的絲或具有或無取代基之碳原子數6至5G的芳香基。R，、R，，及R，"分別為複數個的情況，可為相同，亦可為相異〇 ) 刀離子性聚合L自式⑽騎的構造單元、式（15) 所示的構造單元、切7)㈣的構造單元）的構造單元所成群的1種以上的構造單元，在2冓= 元中包莫耳％幻⑽莫耳％較理想。在王。早 (13) 示具有或無“外的取;價基，紅'表 323545 46 (14)201228842 R2-{(Q1)m-v1(M1)a1(z1)b1}m1Wherein R' represents a divalent hydrocarbon group with or without a substituent, γ represents a hydrogen atom, a monovalent hydrocarbon group with or without a substituent, -C00H, -SOsH, -OH, -SH, -NRc2, -CN or - C(=0)NRc2 represents a trivalent hydrocarbon group with or without a substituent, a3 represents an integer of 1 or more, a4 represents an integer of 〇 or more, and rc represents a filament having a carbon number of 丨 to 3 () with or without a substituent or An aromatic group having 6 to 5 carbon atoms with or without a substituent. R, R, R, and R, " respectively, in the case of plural, may be the same, or may be different 〇) Knife ionic polymerization L from the structural unit of the formula (10) riding, the structure shown by the formula (15) One or more types of structural units in which the structural units of the unit and the seventh (4) structural unit are grouped are preferably 2% imaginary (10) mole % in the 2 冓 = element. In the king. Early (13) shows with or without "outside; price base, red' table 323545 46 (14)201228842 R2-{(Q1)m-v1(M1)a1(z1)b1}m1

{(Q3)〇3-y3W (式（14)中，R2 表示（l+ml+m2)價有機基。qi、q3、γ1、、 Z1、Y3、nl、a卜bl及n3係如前述。ml及m2分別獨立表示！以上的整數 n3分別為複數個的情況，可為相同，亦可為相異。） (15) (fL 、 (式（15)中，R3表示具有式（16)所示的基之丨價基，表示具有或無R3以外的取代基之（2+n5)價芳香族基，n5表示 1以上的整數。R為複數個的情況，可為相同，亦可為相異^ {(QVY3}m4 〇6) (式（16)中，R4表示（i+m3+m4)價有機基。q2、q3、γ2、… ^广^⑽及心係如前述⑽及^分別獨立表不 1 以上的整數。QH、M2、z2、Y3、n2、a2 n3分別為複數個的情況，可為相同，亦可為相異。） (17) 个斗 (R6)„7 (式（Π)中，R5表示具有式⑽所示的基之i價基，具有式（19)所示的基之丨價基，a 3 不 , 頂丞Ar表不具有或無r5& 6 以外的取代基之（2+n6+n7)價芳香族其貝芩骨孩基，n6及n7分別獨立 323545 47 201228842 表不1以上的整數。R5& r6分別為複數個的情況同，亦可為相異。）了為相，一{(〇1)-丫，)』^(18) (式⑽中’ R7表示直接鍵結或⑽5)價 W、Z 丨、nl、al 及 bl#，兮、+、 ^主-， y Y ' YU、n1、】以上的整數。Q1、 a及bl分別為複數個的情況，亦可為相異。）』马相R，一R8— { (Q3)㈠一丫3} (19) v III u \ wr § (式⑽中，R8表示單鍵或⑽6)價有機基。前述。祕表示丨以上的整數單鍵時祕表示㈣、及n3分別f複數個的情況，可為相同亦可為相 (f) n8 ' -Ar4· 丨 ~ (20) (R10) n9 (式⑽中，R9表*具有式⑻所示的基之丨價基，r 具有式（22)所示的基之1價基，AP表示具有或無: 以外的取代基之（2+n8+n9)價芳香族基，⑽及的分別獨立表不1以上的整數。R9及〇別為複數個的情況，可為相同，亦可為相異。） ' (2 1 ί (〇2) n2-Ya (Μ2) a2 (Za) bz} m? (，（21)中，R11表示單鍵或（1+m7)價有機基。q2、γ2、、 Ζ η2、a2及b2係如前述。m7表示1以上的整數。但γ 為單鍵時m7表示卜Q2、Y2、M2、z2、n2、以及⑽分別為 323545 48 201228842 複數個的情況，可為相同，亦可為相異。） -R12- { (Q3) “-γ” „8 (22){(Q3)〇3-y3W (In the formula (14), R2 represents a (l+ml+m2) valence organic group. qi, q3, γ1, Z1, Y3, nl, ab bl and n3 are as described above. Ml and m2 are independently represented! The above integer n3 is a plurality of cases, which may be the same or different. (15) (fL, (in equation (15), R3 means having equation (16) The valence group of the group represents a (2+n5)-valent aromatic group having or not a substituent other than R3, and n5 represents an integer of 1 or more. When R is plural, it may be the same or may be a phase. ^^ {(QVY3}m4 〇6) (In the formula (16), R4 represents (i+m3+m4) valence organic group. q2, q3, γ2, ... ^广^(10) and the heart system are as described above (10) and ^ respectively The independent table is not an integer of 1 or more. When QH, M2, z2, Y3, n2, and a2 n3 are plural, they may be the same or different. (17) 斗(R6) „7 (式(Π), R5 represents an i-valent group having a group represented by the formula (10), has a valence group of a group represented by the formula (19), a 3 is not, and the top 丞Ar table has no or no other than r5& Substituted (2+n6+n7) valence aromatic, its shellfish base, n6 and n7 are independent 323545 47 20122 8842 indicates an integer greater than 1. The case where R5 & r6 are plural, respectively, may also be different.) For phase, a {(〇1)-丫,) 』^(18) (in equation (10) R7 represents a direct bond or (10) 5) valence W, Z 丨, nl, al, and bl#, 兮, +, ^ main-, y Y ' YU, n1, or more integers. Q1, a, and bl are plural The situation can also be different.) 』Ma Xiang R, a R8 — { (Q3) (a) one 丫 3} (19) v III u \ wr § (in the formula (10), R8 represents a single bond or (10) 6) organic The above is the case where the above-mentioned integer single bond time indicates that (4) and n3 are plural, respectively, and may be the same as (f) n8 ' -Ar4· 丨~ (20) (R10) n9 (In the formula (10), R9 represents that the valence group of the group represented by the formula (8), r has a valent group of the group represented by the formula (22), and AP represents a substituent other than: (2+n8) +n9) Avalent aromatic group, (10) and each of them are independent integers of 1 or more. When R9 and screening are plural, they may be the same or different.) ' (2 1 ί (〇2) n2-Ya (Μ2) a2 (Za) bz} m? (, (21), R11 represents a single bond or a (1+m7) valence organic group. q2 Γ2, Ζ η2, a2, and b2 are as described above. m7 represents an integer of 1 or more. However, when γ is a single bond, m7 represents a case where Q2, Y2, M2, z2, n2, and (10) are 323545 48 201228842, respectively. , can be the same, or can be different. ) -R12- { (Q3) "-γ" „8 (22)

(二(22):/2表示單鍵或(1+m8)價有機基。Y3及n3係如 ,8表示i以上的整數。但Rl2為單鍵時讯8表示卜 Q、Y及Π3分別為複數個的情況，可為相同亦可為相異。）包含於離子性聚合物的構造單元，可具有2種類以上之式⑴所示的基，亦可具有2種類以上之式⑵所示的基，亦可具有2種類以上之式（3)所示的基。 —式（1)所示的基— 式（1)中，作為Q1所示的2價有機基，例如亞甲基、伸乙基、1,2-伸丙基、i，3_伸丙基、丨’卜伸丁基、13—伸丁基、1，4-伸丁基、丨，5_伸戊基、丨，6_伸己基、19_伸壬基、 1，12-伸十二烷基及該些基中至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至5〇之2價飽和烴基’伸乙烯基（ethenylene)、伸丙烯基、3-伸丁烯基、 2-伸丁烯基、2-伸戊烯基、2-伸己烯基、2-伸壬烯基、2-伸十二烯基及該些基中至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數2至50之伸烯基以及包含伸乙炔基且具有或無取代基之碳原子數2至50之2價不飽和烴基；伸環丙基、伸環丁基、伸環戊基、伸環己基、伸環壬基、伸環十二烧基、伸降冰片基（norbornylene)、伸金剛烧基（adamantylene)及該些基中至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數3至50之2 價環狀飽和烴基；1，3-伸苯基、1，4-伸苯基、1,4-伸萘基、 49 323545 201228842 1，5-伸萘基、2, 6-伸萘基、聯苯-4, 4’-二基及該些基中至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至50之伸芳基；伸曱氧基、伸乙氧基、伸丙氧基、伸丁氧基、伸戊氧基、伸己氧基及該些基中至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至 50之伸烧氧基；包含碳原子之具有取代基的亞胺基；以及包含奴原子之具有取代基的亞矽基。從成為離子性聚合物的原料之單體（以下稱為「原料單體」）之合成容易度的觀點’以2價飽和烴基、伸芳基及伸烧氧基較理想。 :為f述取代基，例如烷基、烷氧基、烷硫基、芳香 f芳香氧基、芳香硫基、芳香基烧基、芳香基烧氧基、 ^香基U芳香基婦基、芳香基炔基、胺基、取代胺 =石夕基取代石夕基、自原子、醯基、酸氧基、亞胺殘基、 ^ 1核雜環基、羥基、羧基、取代羧基、(2 (22): /2 represents a single bond or (1+m8) valence organic group. Y3 and n3 are, for example, 8 represents an integer greater than i. However, when Rl2 is a single bond, the signal 8 indicates that Q, Y and Π3 respectively In the case of a plurality of types, the structural unit included in the ionic polymer may have two or more types of the formula represented by the formula (1), or may have two or more types of the formula (2). The base may have two or more types of groups represented by the formula (3). - a group represented by the formula (1), wherein, in the formula (1), a divalent organic group represented by Q1, for example, a methylene group, an exoethyl group, a 1,2-extended propyl group, an i, a 3-propyl group , 丨'b butyl, 13-butylene, 1,4-butylene, anthracene, 5-extension, hydrazine, 6-extension, 19-extension, 1,12-extension An alkyl group and a divalent saturated hydrocarbon group having 1 to 5 carbon atoms having or having no substituent, wherein the alkyl group and at least one of the hydrogen atoms are substituted by a substituent, an ethenylene, an propylene group, 3-butenyl group, 2-butenbutenyl group, 2-endopentenyl group, 2-extended hexenyl group, 2-extended alkenyl group, 2-extended dodecenyl group and at least one of these groups An alkenyl group having 2 to 50 carbon atoms with or without a substituent having a hydrogen atom substituted by a substituent, and a divalent unsaturated hydrocarbon group having 2 to 50 carbon atoms and having or without a substituent. Cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, fluorenyl, fluorene, norbornylene, adamantylene, and a group in which at least one hydrogen atom in the group is substituted by a substituent or the like a valence-free saturated hydrocarbon group having 3 to 50 carbon atoms with or without a substituent; 1,3-phenylene, 1,4-phenylene, 1,4-naphthyl, 49 323545 201228842 1,5 - a naphthyl group, a 2,6-anthranyl group, a biphenyl-4,4'-diyl group, and a carbon atom having or without a substituent such as a group in which at least one hydrogen atom of the group is substituted by a substituent a 6 to 50 exoaryl group; an exomethoxy group, an exoethoxy group, a propenoxy group, a butoxy group, a pentyloxy group, a hexyloxy group, and at least one hydrogen atom in the group are substituted a substituted alkyloxy group having 1 to 50 carbon atoms with or without a substituent; a substituted amine group containing a carbon atom; and a fluorenylene group having a substituent of a slave atom. From the viewpoint of the ease of synthesis of a monomer which is a raw material of the ionic polymer (hereinafter referred to as "raw material monomer"), a divalent saturated hydrocarbon group, an extended aryl group and an extended alkyl group are preferable. Is a substituent such as alkyl, alkoxy, alkylthio, aromatic f-aryloxy, arylthio, arylalkyl, aryloxy, aryl U aryl Alkynyl group, amine group, substituted amine = cyclade-substituted cyclamate, self-atomic, fluorenyl, acidoxy, imine residue, ^ 1 nuclear heterocyclic group, hydroxyl group, carboxyl group, substituted carboxyl group,

,^ :土則迷取代基存在複數個的情況，該些可為相同，亦可為相異。L, ^ : soil, there are multiple cases of substituents, which may be the same or different. L

Λ ., Α 、上述取代基中，胺基、矽基、鹵原子、以下，說明取抑A 足m<n之正整數)土。而且’所謂「匕至Cn」(m’ n為滿基的碳原子數^/語，表示與制闕時記載之有機子數為m至η，若β °例如^ ^基表純基的碳原子數為，若Μ基芳香基，表示烧基的碳原子數為ra至η。#基{至Q基，表示院基的碳原烧烧基，可為直―亦可為分支狀，亦可為環烷基 50 323545 201228842 基的碳原子數，通常為1至20，較理想為丨至10〇作為烷基，例如可列舉甲基、乙基、丙基、異丙基、丁基、異丁基、第2 丁基、f 3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基及月桂基等。烷基的氫原子可被氟原子Λ., Α In the above substituent, an amine group, a fluorenyl group, a halogen atom, or the following, a description is given of the case where the A is a positive integer of m. Moreover, 'the so-called "匕 to Cn" (m' n is the number of carbon atoms in the full base, which means that the number of organic species recorded at the time of preparation is m to η, and if β °, for example, the base of the pure carbon The number of atoms is Μ aryl group, which means that the number of carbon atoms in the group is ra to η. #基{ to Q group, which means the carbon-based burning group of the hospital base, which may be straight or branched. The number of carbon atoms which may be a cycloalkyl group 50 323545 201228842, usually 1 to 20, more preferably 丨 to 10 〇 as an alkyl group, and examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, and a butyl group. Isobutyl, butyl, f 3 butyl, pentyl, hexyl, cyclohexyl, heptyl, octyl, decyl, decyl, lauryl, etc. The hydrogen atom of the alkyl group may be a fluorine atom.

取代。作為氣原子取代之烧基，例如可列舉三氣曱基、五氟乙基、全氟丁基、全氟己基及全氟辛基等。作為（^至Ci2 烷基，例如可列舉甲基、乙基、丙基、異丙基、丁基、異丁基、第2丁基、第3丁基、戊基、異戊基、己基、環己基、庚基、辛基、壬基、癸基及月桂基。燒氧基，可為直鏈狀亦可為分支狀，亦可為環烧氧基，了更具有取代基。院氧基的碳原子數，通常為1至，較理想為1至10。作為烷氧基，例如曱氧基、乙氧基、丙氧基異丙氧基、丁氧基、異丁氧基、第2 丁氧基、第3 丁氧基、戊氧基、己氧基、環己氧基、庚氧基、辛氧基、壬氧基、癸氧基及月桂氧基。烧氧基的氫原子可被氟原子取代作為氟原子取代之烷氧基，例如三氟甲氧基、五氟乙氧基、全氟丁氧基、全氟己氧基及全氟辛氧基。於烧氧基，亦可包含甲氧基甲基氧基及2-甲氧基乙基氧基。作為。至Cu垸氧基’例如曱氧基、乙氧基、丙氧基、里丙氧基、丁氧基、異丁氧基、第2丁氧基、第3丁氧基、戊氧基、 j基、環己氧基、庚氧基、辛氧基、2乂基己氧基、壬虱基、癸氧基、3, 7-二曱基辛氧基及月桂氧基。 =基’可為直鏈狀亦可為分支狀，亦可土為環烧硫基， 7更具有取代基。烧硫基的碳原子數，通常為丄至2〇，較 323545 51 201228842 理想為1至10。作為烷硫基，例如甲硫基、乙硫基、两碎基、異丙硫基、丁硫基、異丁硫基、第2 丁硫基、第3 丁硫基、戊硫基、己硫基、環己硫基、庚硫基、辛硫基、壬硫基、癸硫基及月桂硫基。烧硫基的氫原子可被敗原子取代。作為氟原子取代之烷硫基，例如三氟甲硫基。芳香基，係從芳香族烴除去1個鍵結於構成芳香環的碳原子之氫原子所殘留的原子團。於芳香基，亦包含具有苯環的基、具有縮合環的基及苯環或縮合環2個以上單鍵 ® 或隔著2價有機基（例如伸乙稀基（vinylene)等伸稀基）矣i 合的基。方香基’其奴原子數通常為6至60，較理想為7 至48。作為芳香基，例如可列舉苯基、匕至Ci2烷氧基苯基、 Ci至Ci2烧基本基、1_备基、2-蔡基、1-蒽基、2-蕙基及9-蒽基等。芳香基的氫原子亦可被氟原子取代。作為氟原子取代之芳香基’例如可列舉五氟苯基。作為芳香基，以Cl 炱Cu烷氧基苯基及〇至C12烷基苯基較理想。 φ 作為Cl至Cl2烧氧基苯基，例如曱氧基苯基、乙氧基苯基、丙氧基苯基、異丙氧基苯基、丁氧基苯基、異丁氧基苯基、第2 丁氧基苯基、第3 丁氧基苯基、戊氧基苯基、己氧基苯基、環己氧基苯基、庚氧基苯基、辛氧基苯基、 2-乙基己氧基苯基、壬氧基苯基、癸氧基苯基、3, 7-二曱基辛氧基苯基及月桂氧基苯基。作為Ci至C12烷基苯基，例如可列舉曱基苯基、乙基苯基、二甲基笨基、丙基苯基、均三甲苯基（mesityl)、曱基乙基笨基、異丙基苯基、丁基苯基、異丁基苯基、第3 丁 52 323545 201228842 基苯基、戊基苯基、異戊基苯基、己基苯基、庚基苯基、辛基苯基、壬基苯基、癸基苯基及十二烷基苯基。芳香氧基，其碳原子數通常為6至6〇，較理想為7至 48。作為芳香氧基，例如可列舉苯氧基、匕至L烷氧基苯氧基、Cl至Cl2烷基苯氧基、1_萘氧基、2_萘氧基及五氟苯氧基。作為芳香氧基，以（^至L烷氧基苯氧基及。至^ 烧基笨氧基較理想。作為〇至Cl2烷氧基苯氧基，例如甲氧基苯氧基、乙氧基苯氧基、丙氧基苯氧基、異丙氧基苯氧基、丁氧基苯氧基、異丁氧基苯氧基、第2 丁氧基苯氧基、第3 丁氧基苯氧基、戊氧基苯氧基、己氧基苯氧基、環己氧基苯氧基、庚氧基苯氧基、辛氧基苯氧基、2-乙基己氧基苯氧基、壬氧基苯氧基、癸氧基苯氧基、3, 7_二甲基辛氧基笨氧基及月桂氧基笨氧基。作為匕至^烷基苯氧基，例如甲基苯氧基、乙基苯氧 •基、二甲基苯氧基、丙基苯氧基、丨，3, 5_三甲基苯氧基、曱基乙基笨氧基、異丙基苯氧基、丁基苯氧基、異丁基笨氧基、第2 丁基苯氧基、第3 丁基苯氧基、戊基苯氧基、異戊基笨氧基、己基苯氧基、庚基苯氧基、辛基笨氧基、壬基笨氧基、癸基苯氧基及十二烷基苯氧基。芳香硫基，例如硫元素鍵結於前述芳香基之基。芳香硫基，亦可於前述芳香基的芳香環上具有取代基。芳香硫基，其碳原子數通常為6至6〇，較理想為6至3(N作為芳香硫基，例如苯硫基、〇1至。烷氧基苯硫基、。至h烷 323545 53 201228842 基苯硫基、1-萘硫基、2-萘硫基及五氟苯硫基β 芳香基烷基，例如前述烷基鍵結於前述芳香基之基。芳香基烷基，可具有取代基。芳香基烷基，其碳原子數通常為7至60，較理想為7至30。作為芳香基烷基，例如可列舉苯基-(^至C”烷基、(：!至Clz烷氧基苯基—(^至Cl2烷基、匕至Cu烷基苯基-G至Clz烷基、1-萘基_Ci至Ci2烷基及2_ 萘基-Cl至Cl2烧基。Replace. Examples of the alkyl group substituted by a gas atom include a trimethyl sulfhydryl group, a pentafluoroethyl group, a perfluorobutyl group, a perfluorohexyl group, and a perfluorooctyl group. Examples of the (^ to Ci2 alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, a third butyl group, a pentyl group, an isopentyl group, and a hexyl group. Cyclohexyl, heptyl, octyl, decyl, decyl and lauryl. The alkoxy group may be linear or branched, or may be alkoxylated, more substituted. The number of carbon atoms is usually from 1 to 1, more preferably from 1 to 10. As the alkoxy group, for example, a decyloxy group, an ethoxy group, a propoxyisopropoxy group, a butoxy group, an isobutoxy group, and a second Butoxy, 3, butoxy, pentyloxy, hexyloxy, cyclohexyloxy, heptyloxy, octyloxy, decyloxy, decyloxy and lauryloxy. The hydrogen atom of the alkoxy group can be An alkoxy group substituted by a fluorine atom as a fluorine atom, such as trifluoromethoxy, pentafluoroethoxy, perfluorobutoxy, perfluorohexyloxy and perfluorooctyloxy. It may contain a methoxymethyloxy group and a 2-methoxyethyloxy group. As a Cu-oxyl group, such as a decyloxy group, an ethoxy group, a propoxy group, a propyleneoxy group, a butoxy group, Isobutoxy, 2nd butoxy 3rd butoxy, pentyloxy, j-group, cyclohexyloxy, heptyloxy, octyloxy, 2 decylhexyloxy, decyl, decyloxy, 3,7-didecyloctyloxy Base and lauryloxy. = base ' can be linear or branched, or the earth is a ring-burning sulfur group, and 7 has a substituent. The number of carbon atoms in the sulfur-burning group is usually from 2 to 2, More preferably 323545 51 201228842 is preferably 1 to 10. As an alkylthio group, for example, methylthio, ethylthio, difragyl, isopropylthio, butylthio, isobutylthio, 2nd butylthio, 3rd Butylthio, pentylthio, hexylthio, cyclohexylthio, heptylthio, octylthio, sulfonylthio, sulfonylthio, and laurylthio. The hydrogen atom of the sulfur-burning group can be substituted by a deficient atom. An alkylthio group substituted with a fluorine atom, for example, a trifluoromethylthio group. An aromatic group is an atomic group remaining from a hydrogen atom bonded to a carbon atom constituting an aromatic ring from an aromatic hydrocarbon. a benzene ring group, a condensed ring group, a benzene ring or a condensed ring, two or more single bonds, or a group having a divalent organic group (for example, a vinylene group) The aryl group's atomic number is usually from 6 to 60, more preferably from 7 to 48. Examples of the aryl group include a phenyl group, a fluorene to a Ci2 alkoxyphenyl group, a Ci to a Ci2 alkyl group, and a 1-base group. And a 2-fluoro group, a 1-fluorenyl group, a 2-fluorenyl group, a 9-fluorenyl group, etc. The hydrogen atom of the aryl group may be substituted by a fluorine atom. The aryl group substituted as a fluorine atom may, for example, be a pentafluorophenyl group. As the aromatic group, it is preferred to use a Cl 炱 Cu alkoxyphenyl group and a fluorene to a C12 alkyl phenyl group. φ as a Cl to Cl 2 alkoxyphenyl group such as a decyloxyphenyl group, an ethoxyphenyl group or a propoxy group. Phenylphenyl, isopropoxyphenyl, butoxyphenyl, isobutoxyphenyl, 2, butoxyphenyl, 3, butoxyphenyl, pentyloxyphenyl, hexyloxybenzene , cyclohexyloxyphenyl, heptyloxyphenyl, octyloxyphenyl, 2-ethylhexyloxyphenyl, nonyloxyphenyl, nonyloxyphenyl, 3,7-didecyl Octyloxyphenyl and lauryloxyphenyl. Examples of the Ci to C12 alkylphenyl group include a nonylphenyl group, an ethylphenyl group, a dimethylphenyl group, a propylphenyl group, a mesityl group, a mercaptoethyl strepyl group, and an isopropyl group. Phenylphenyl, butylphenyl, isobutylphenyl, 3rd 52 323545 201228842 phenyl, pentylphenyl, isopentylphenyl, hexylphenyl, heptylphenyl, octylphenyl, Nonylphenyl, nonylphenyl and dodecylphenyl. The aryloxy group has a carbon number of usually 6 to 6 Å, more preferably 7 to 48. Examples of the aromatic oxy group include a phenoxy group, a fluorene to L alkoxyphenoxy group, a Cl to Cl2 alkylphenoxy group, a 1-naphthyloxy group, a 2-naphthyloxy group, and a pentafluorophenoxy group. As the aromatic oxy group, it is preferred to use (^ to L alkoxyphenoxy group and to a pyridyloxy group. As a hydrazine to a C2 alkoxyphenoxy group, for example, a methoxyphenoxy group, an ethoxy group. Phenoxy, propoxyphenoxy, isopropoxyphenoxy, butoxyphenoxy, isobutoxyphenoxy, 2,butoxyphenoxy, 3 butyloxyphenoxy , pentyloxyphenoxy, hexyloxyphenoxy, cyclohexyloxyphenoxy, heptyloxyphenoxy, octyloxyphenoxy, 2-ethylhexyloxyphenoxy, hydrazine An oxyphenoxy group, a decyloxyphenoxy group, a 3,7-dimethyloctyloxyoxy group, and a lauryloxyoxy group. As a hydrazine to an alkylphenoxy group, for example, a methylphenoxy group. Ethylphenoxyl, dimethylphenoxy, propylphenoxy, anthracene, 3,5-trimethylphenoxy, nonylethyloxy, isopropylphenoxy, butyl Phenoxy, isobutyloxy, 2,butylphenoxy, 3 butylphenoxy, pentylphenoxy, isopentyloxy, hexylphenoxy, heptylphenoxy , octyl oxy, decyloxy, nonyl phenoxy and dodecyl phenoxy. A sulfur group such as a sulfur element is bonded to the above-mentioned aromatic group. The aromatic thio group may also have a substituent on the aromatic ring of the above aromatic group. The aromatic thio group has a carbon number of usually 6 to 6 Å, which is preferable. 6 to 3 (N as an aromatic thio group, such as phenylthio, 〇1 to alkoxyphenylthio, to h-hexane 323545 53 201228842 phenylthio, 1-naphthylthio, 2-naphthylthio And a pentafluorophenylthio β arylalkyl group, for example, the aforementioned alkyl group is bonded to the above-mentioned aryl group. The arylalkyl group may have a substituent. The arylalkyl group has a carbon number of usually 7 to 60, More preferably, it is 7 to 30. As the arylalkyl group, for example, phenyl-(^ to C" alkyl group, (:! to Clz alkoxyphenyl group - (^ to Cl2 alkyl group, fluorene to Cu alkyl group) Phenyl-G to Clz alkyl, 1-naphthyl-Ci to Ci2 alkyl and 2-naphthyl-Cl to Cl2 alkyl.

芳香基烷氧基，例如前述烷氧基鍵結於前述芳香基之基。芳香錄氧基，可更具有取代基。芳香就氧基，其碳原子數通常為7至60,較理想為7至3〇〇作為芳香基烷氧基，例如可列舉苯基-dL燒氧基、CjCi2燒氧基苯基‘至h烷氧基、l烷基笨基义至&烷氧基、卜蔡基-(^至k烧氧基及2-萘基-(^至l烷氧基。芳香基炫硫基’例如前述烧疏基鍵結於前述芳香基之基。芳香基烧硫基’可更具有取代基。芳香基烧硫基，其碳原子數通常為7錢，較理想為7至3()。作為芳香基烧硫基，例如可列舉苯基{至_硫基、Μ ^氧基笨基丄至Cl2烧硫基、d L烧基笨基_Ci至&烷硫基、卜蔡基-(^至Cu烧硫基及2-萘基-(^至&燒硫基。 “芳香基嫦基’例如前述婦基鍵結於前述二香基之基。芳香基烯基，其碳原子數通常為8至6()，較理想^至3〇。作為芳香基縣，例如可鱗苯基{至^縣、&至^ 烧氧基苯基-(：2至C12烯基、Cd C12燒基笨基七至^稀基、卜萘基-(：2至C12稀基及2-萘基-c2至Cl2稀基。其中，較理 323545 54 201228842 想為Cl至Cl2烧氧基苯基-C2至Cl2烯基及C2至Cl2烧基苯基 ~C2至Cu稀基。作為C2至Ci2烯基，例如可列舉乙稀基、1_ 丙烯基、2-丙烯基、1-丁烯基、2-丁烯基、1-戊烯基、2-戊烯基、1-己烯基、2-己烯基及卜辛烯基。芳香基抉基，例如前述炔基鍵結於前述芳香基之基。芳香基炔基，其碳原子數通常為8至60，較理想為8至30。作為芳香基炔基，例如可列舉苯基-C2至C12炔基、Cl至Cl2 鲁燒氧基苯基_匕至Cu炔基、C!至Cl2烷基苯基-C2至Cl2炔基、 1蔡基~*C2至Ci2快基及2-萘基-C2至Ci2块基。其中，較理想為（^至c!2烷氧基苯基-(：2至Cu炔基及〇1至c12烷基苯基 C2至Cu炔基。作為C2至Ci2炔基，例如可列舉乙炔基、i_ 丙炔基、2-丙炔基、卜丁炔基、2-丁炔基、卜戊炔基、2-戊炔基、卜己炔基、2-己炔基及1-辛炔基。取代胺基，以胺基的至少丨個氫原子被選自烷基、芳香基、芳香基烷基及1價雜環基所成群的1或2個基取代鲁之胺基較理想。該烧基、芳香基、芳香基烧基或i價雜環基，可具有取代基。取代胺基的碳原子數，在不包含該烷 f、芳香基、芳香基烷基或丨價雜環基可具有的取代基之反原子數下，通常為1至6〇，較理想為2至48。作為取代胺基，例如可列舉甲基胺基、二甲基胺基、乙基胺基、二乙基胺基、丙基胺基、二两基胺基、異丙基胺基、二異丙基胺基、丁基胺基、異丁基胺基、第2丁基胺基、第3丁基胺基、戊基胺S、己基胺基、環己基胺基、$基胺基、辛基胺基、2-乙基己基胺基、壬基胺基、癸基胺基、3,7_ 323545 55 201228842 二甲基辛基胺基、月桂基胺基、環戊基胺基、二環戊基胺基、環己基胺基、二環己基胺基、二（三氟甲基）胺基、苯基胺基、二苯基胺基、（c!至c12烷氧基苯基）胺基、二至Cu烷氧基苯基）胺基、二（〇至〇2烷基苯基）胺基、1-萘基胺基、2-萘基胺基、五敗苯基胺基、η比咬基胺基、噠嗪基（pyridazinyl)胺基、嘧啶基（pyrimidyl)胺基、吼唤基 (pyrazinyl)胺基、三嗓基（triazinyl)胺基、（苯基-Ci至 c·2烷基）胺基、（〇至L烷氧基苯基-(^至C12烷基）胺基、 (Cl至Cl2烧基苯基-Cl至Cl2烧基）胺基、二（Cl至Cl2烧氧基苯基-0至C!2烷基）胺基、二（〇至C"烷基苯基-(^至（]12烷基）胺基、1-萘基-匕至匕2烷基胺基及2-萘基-(^至C12烷基胺基。取代矽基’以矽基的至少1個氫原子被選自烷基、芳香基、芳香基烧基及1價雜環基所成群的1至3個基取代之矽基較理想。該烷基、芳香基、芳香基烷基或丨價雜環 Φ 基，可具有取代基。取代石夕基的碳原子數，在不含該烧基、芳香基、芳香基烷基或1價雜環基可具有的取代基之碳原子數下，通常為1至60,較理想為3至48。作為取代矽基，例如可列舉三曱基矽基、三乙基矽基、三丙基矽基、三異丙基矽基、異丙基二曱基矽基、異丙基二乙基矽基、第3 丁基二甲基矽基、戊基二甲基矽基、己基二甲基矽基、庚基一甲基矽基、辛基二曱基矽基、2-乙基己基二曱基矽基、壬基二曱基矽基、癸基二甲基矽基、3, 7-二曱基辛基二曱基矽基、月桂基二曱基矽基、（苯基_Ci至Ci2烷基）矽基、 323545 56 201228842 (Cl至Cl2烧乳基本基_Cl至Cl2烧基）♦基、（Cl至Cl2烧基苯基-C!至C12烷基）石夕基、（1-萘基-G至C12烷基）石夕基、（2-萘基-Cl至Cl2烧基）碎基、（苯基-Ci至Cl2燒基）二甲基^夕基、三苯基矽基、三（對-二甲苯基）矽基、三苄基石夕基、二苯基曱基石夕基、第3 丁基二苯基石夕基及二曱基苯基石夕基。作為鹵原子’可列舉氟原子、氣原子、溴原子及破原子。醯基’其碳原子數通常為2至20，較理想為2至18。作為醯基，例如可列舉乙醯基、丙醯基、丁醯基、異丁醯基、三曱基乙醯基（pival〇yl)、苯曱醯基、三氟乙醯基及五氟苯甲醯基。醯氧基’其碳原子數通常為2至20,較理想為2至18。作為醯氧基，例如可列舉乙醯氧基、丙醯氧基、丁醯氧基、異丁酿氧基、二甲基乙醯氧基（pivaloyloxy)、苯甲醯氧基、二氟乙醯乳基及五氟苯曱酿氧基。亞胺殘基，係由具有式：H_N=C<及式：_N=CH—的至少者所示的構造之亞胺化合物，除去該構造中丨個氫原子之殘基。作為亞胺化合物，例如可列舉醛亞胺（aldimine)、酮亞胺（ketimine)以及醛亞胺中鍵結於氮原子之氫原子被烷基、芳香基、芳香基烷基、芳香基烯基或芳香基炔基等取代之化合物。亞胺殘基的碳原子數通常為2至2〇，較理想為2至18。作為亞胺殘基，例如一般式：_CR\N_Rr或 #般式：-N=C(RrM式中，V表示氫原子、烷基、芳香基、方香基烷基、芳香基烯基或芳香基炔基，以獨立表示烷基、 323545 57 201228842 芳香基、芳香基烷基、芳香基烯基或芳香基炔基，但存在 2個R7的情況，2個R7互相結合為一體之2價基，例如伸乙基、三亞曱基、四亞甲基、五亞甲基及六亞曱基等碳原子數2至18的伸烷基，亦可形成環。）所示的基。作為亞胺殘基，可列舉以下的基。An arylalkoxy group, for example, the aforementioned alkoxy group is bonded to the above-mentioned aryl group. Aromatic oxime can have more substituents. The aromatic group is an oxy group having a carbon number of usually 7 to 60, more preferably 7 to 3 Å, as an arylalkoxy group, and examples thereof include a phenyl-dL alkoxy group and a CjCi2 alkoxyphenyl group to h. Alkoxy, 1 alkyl, and alkoxy, brocyl-(^ to k alkoxy and 2-naphthyl-(^ to alkoxy. aryl thiol) such as the foregoing The sulphur-based group is bonded to the group of the aforementioned aryl group. The aryl thiol group may have a more substituent. The aryl group has a sulfur atom number of usually 7 money, preferably 7 to 3 (). Examples of the thiol group can be exemplified by phenyl { to thiol, Μ oxy phenyl hydrazine to Cl 2 thiol group, d L alkyl group _Ci to & alkylthio group, 卜蔡基-(^ To Cu-burning thiol and 2-naphthyl-(^ to & thiol-based. "Aromatic fluorenyl" such as the aforementioned cation group bonded to the aforementioned disaccharide group. Aromatic alkenyl group, usually having a carbon number 8 to 6 (), preferably ^ to 3 〇. As an aromatic base, for example, fluorenyl phenyl {to ^ county, & to ^ oxyphenyl- (: 2 to C12 alkenyl, Cd C12 burned The base is a subunit of 7 to a dilute group, a naphthyl-(: 2 to C12 dilute group and a 2-naphthyl-c2 to Cl 2 dilute group. Among them, 323545 54 201228842 is considered to be alkoxy-phenyl-C2 to Cl2 alkenyl group and C2 to Cl2 alkylphenyl~C2 to Cu thin group. As the C2 to Ci2 alkenyl group, for example, ethylene is exemplified. 1, 1 - propenyl, 2-propenyl, 1-butenyl, 2-butenyl, 1-pentenyl, 2-pentenyl, 1-hexenyl, 2-hexenyl and octene An aromatic fluorenyl group, for example, the aforementioned alkynyl group is bonded to the above-mentioned aryl group. The arylalkynyl group has a carbon number of usually 8 to 60, more preferably 8 to 30. As the arylalkynyl group, for example Listed phenyl-C2 to C12 alkynyl, Cl to Cl2 ruthenoxy phenyl 匕匕 to Cu alkynyl, C! to Cl 2 alkyl phenyl-C 2 to Cl 2 alkynyl, 1 radio ~ * C 2 to Ci 2 fast And 2-naphthyl-C2 to Ci2 block. Among them, (^ to c! 2 alkoxyphenyl-(: 2 to Cu alkynyl and 〇 1 to c12 alkyl phenyl C 2 to Cu alkyne) Examples of the C2 to Ci2 alkynyl group include an ethynyl group, an i-propynyl group, a 2-propynyl group, a butynyl group, a 2-butynyl group, a pentynyl group, a 2-pentynyl group, and a dipyridyl group. Alkynyl, 2-hexynyl and 1-octynyl. Substituted amine, at least one hydrogen atom of the amine group is selected from alkyl, aromatic One or two base-substituted amine groups in which a group, an arylalkyl group and a monovalent heterocyclic group are grouped are preferred. The alkyl group, the aromatic group, the aryl group or the i-valent heterocyclic group may have a substitution. The number of carbon atoms of the substituted amine group is usually from 1 to 6 Å in terms of the number of reverse atoms which does not contain the substituent which the alkane f, the aryl group, the arylalkyl group or the fluorene heterocyclic group may have. It is 2 to 48. Examples of the substituted amine group include a methylamino group, a dimethylamino group, an ethylamino group, a diethylamino group, a propylamino group, a diammonyl group, and an isopropylamine. Base, diisopropylamino, butylamino, isobutylamino, t-butylamino, butylamino, pentylamine S, hexylamino, cyclohexylamine, base Amino, octylamino, 2-ethylhexylamino, decylamino, decylamino, 3,7_ 323545 55 201228842 dimethyloctylamino, laurylamine, cyclopentylamino , dicyclopentylamino, cyclohexylamino, dicyclohexylamino, bis(trifluoromethyl)amino, phenylamino, diphenylamino, (c! to c12 alkoxyphenyl) Amino group, di- to Cu alkoxy group Amino group, bis(indenyl-2-alkylphenyl)amino group, 1-naphthylamino group, 2-naphthylamino group, penta-phenylphenylamino group, η-butylamino group, pyridazinyl group (pyridazinyl)amino group, pyrimidyl amine group, pyrazinyl amine group, triazinyl amine group, (phenyl-Ci to c. 2 alkyl) amine group, L alkoxyphenyl-(^ to C12 alkyl)amine, (Cl to Cl2 alkylphenyl-Cl to Cl2 alkyl) amine, di(Cl to Cl2 alkoxyphenyl-0 to C! 2 alkyl)amino, bis(〇 to C"alkylphenyl-(^ to ()12 alkyl)amino, 1-naphthyl-fluorene to decylalkylamino and 2-naphthyl-( ^ to C12 alkylamino group. The substituted fluorenyl group is preferably a fluorenyl group in which at least one hydrogen atom of the fluorenyl group is substituted with 1 to 3 groups selected from the group consisting of an alkyl group, an aromatic group, an aryl group and a monovalent heterocyclic group. The alkyl group, the aryl group, the arylalkyl group or the anthracene heterocyclic ring group may have a substituent. The number of carbon atoms of the substituted Schiffki group is usually from 1 to 60, more preferably 3, in the number of carbon atoms which does not contain the substituent which the alkyl group, the aromatic group, the arylalkyl group or the monovalent heterocyclic group may have. To 48. Examples of the substituted fluorenyl group include a trimethyl fluorenyl group, a triethyl decyl group, a tripropyl fluorenyl group, a triisopropyl fluorenyl group, an isopropyl decyl fluorenyl group, and an isopropyl diethyl fluorenyl group. , 3 butyl dimethyl fluorenyl, pentyl dimethyl fluorenyl, hexyl dimethyl fluorenyl, heptyl monomethyl fluorenyl, octyl decyl fluorenyl, 2-ethylhexyl fluorenyl Sulfhydryl, fluorenyl dimethyl fluorenyl, fluorenyl dimethyl fluorenyl, 3,7-didecyl octyl fluorenyl, lauryl dimercaptoalkyl, (phenyl-Ci to Ci2 alkane) Base), 323545 56 201228842 (Cl to Cl2 calcined base _Cl to Cl2 alkyl) ♦ base, (Cl to Cl2 alkyl phenyl-C! to C12 alkyl) Shi Xiji, (1-naphthalene) --G to C12 alkyl) sylylene, (2-naphthyl-Cl to Cl2 alkyl), (phenyl-Ci to Cl2 alkyl) dimethyl oxime, triphenyl fluorenyl, Tris(p-xylphenyl)fluorenyl, tribenzyl sulphate, diphenyl fluorenyl sulphate, butyl butyl diphenyl sulphate and dinonyl phenyl sulphate. The halogen atom 'is a fluorine atom, a gas atom, a bromine atom, and a broken atom. The fluorenyl group has a carbon number of usually 2 to 20, more preferably 2 to 18. Examples of the fluorenyl group include an ethyl group, a propyl group, a butyl group, an isobutyl group, a pival〇yl group, a benzoinyl group, a trifluoroethenyl group, and a pentafluorobenzylidene group. The decyloxy group has a carbon number of usually 2 to 20, more preferably 2 to 18. Examples of the decyloxy group include an ethoxycarbonyl group, a propenyloxy group, a butoxy group, an isobutyryloxy group, a pivaloyloxy group, a benzamidineoxy group, and a difluoroacetamidine group. Lactic and pentafluorophenyl hydrazine can be made into an oxy group. The imine residue is an imine compound having a structure represented by at least one of the formula: H_N = C < and the formula: _N = CH -, and the residue of one hydrogen atom in the structure is removed. Examples of the imine compound include, for example, aldimine, ketimine, and a hydrogen atom bonded to a nitrogen atom in an aldimine group, an alkyl group, an aryl group, an arylalkyl group, or an arylalkenyl group. Or a compound substituted with an arylalkynyl group or the like. The imine residue usually has a carbon number of 2 to 2 Å, preferably 2 to 18. As the imine residue, for example, the general formula: _CR\N_Rr or #like: -N=C (wherein R represents a hydrogen atom, an alkyl group, an aromatic group, a arylalkyl group, an arylalkenyl group or an aromatic alkyne). a group, which independently represents an alkyl group, 323545 57 201228842 aryl, arylalkyl, arylalkenyl or arylalkynyl, but in the case of two R7, two R7 are bonded to each other as a divalent group, for example An alkyl group having 2 to 18 carbon atoms such as an ethyl group, a trisylene group, a tetramethylene group, a pentamethylene group or a hexamethylene group may form a group represented by a ring. Examples of the imine residue include the following groups.

Me 八人 MeMe Eight People Me

(式中，Me表示甲基，以下相同。）醯胺基，其碳原子數通常為1至20,較理想為2至18。作為醯胺基，例如可列舉曱醯胺基、乙醯胺基、丙醯胺基、丁醯胺基、苯曱醯胺基、三氟乙醯胺基、五氟苯曱醯胺基、二曱醯胺基、二乙醯胺基、二丙醯胺基、二丁醯胺基、二 58 323545 201228842 苯曱醯胺基、二（三氟乙醯胺基）及（二五氟苯甲醯胺基）。醯亞胺基，係從醯亞胺除去鍵結於該氮原子之氫原子所得的殘基。酼亞胺基，其碳原子數通常為4至20，較理想為4至18。作為醯亞胺基，可列舉以下的基。(wherein Me represents a methyl group, the same applies hereinafter.) The guanamine group has a carbon number of usually 1 to 20, more preferably 2 to 18. Examples of the guanamine group include an anthracenyl group, an etidinyl group, a propylamine group, a butylammonium group, a benzoguanamine group, a trifluoroacetamido group, a pentafluorophenylamino group, and Amidino, diethylamine, dipropylamine, dibutylammonium, 258 323545 201228842 benzoguanamine, bis(trifluoroacetamido) and (dipentafluorobenzamide) Amine). The quinone imine group is a residue obtained by removing a hydrogen atom bonded to the nitrogen atom from the quinone imine. The quinone imine group has a carbon number of usually 4 to 20, preferably 4 to 18. Examples of the quinone imine group include the following groups.

所謂1價雜環基，係指從雜環化合物除去1個氳原子所殘留的原子團。所謂雜環化合物，係指具有環狀構造的有機化合物中，作為構成環的元素，不僅包含碳原子，包含氧原子、硫原子、氮原子、填原子、棚原子、碎原子、硒原子、碲原子及砷原子等雜原子之有機化合物。1價雜環基，可具有取代基。1價雜環基，其碳原子數通常為3 至60，較理想為3至20。於1價雜環基的碳原子數，不包含取代基的碳原子數。作為1價雜環基，例如噻吩基 59 323545 201228842 (thienyl)、Ci至Ci2烧基售吩基、啦洛基、呋喃基、π比咬基、Ci至Ci2烧基°比咬基、建嘻基（pyridazinyl)、嘲咬基 (pyrimidyl)、吡嗪基（pyrazinyl)、三嗪基（triazinyl)、 0比咯啶基（pyrrolidyl)、哌啶基（piperidyl)、喹淋基 (quinolyl)及異喹啉基（isoquinolyl)。其中，以噻吩基、 C!至C1Z烷基噻吩基、吡啶基及（^至C1Z烷基吡啶基較理想。再者，作為1價雜環基，較理想為1價芳香族雜環基。所謂取代羧基，係指羧基的氫原子被烷基、芳香基、 ^香基烧基或1價雜環基取代之基，亦即式：-C〇0)0R* (式中，R*表示烷基、芳香基、芳香基烷基或丨價雜環美）所示的基。取代羧基，其碳原子數通常為2至6〇，較理相為2至48。前述烷基、芳香基、芳香基烷基或丨價雜環義〜' 可具有取代基。於碳原子數，不包含前述烷基、芳香^ 务香基烧基或1價雜環基可具有的取代基之碳原子數鲁為取代絲，例如可列舉甲氧基裁基、乙氧基軌。作基縣、異丙氧基縣、丁氧基幾基、異丁氧基^内氧 2 丁氧基縣、第3 丁氧基麟、戊氧基幾基、己Γ、第基、環己氧基縣、庚氧基、辛氧基幾孔基幾氧基縣、壬氧基縣、癸氧基·、3, 7一1甲^基已碳基、十二烷氧基羰基、三氟甲氧基羰基、五氟= > 氣基基、全氟丁氧基絲、全氟己氧基缝、全氟乳基幾苯氧基縣、萘氧基·及料氧基麟。4基、式⑴中’ r表示3'_s〇2'，3或柳、 323545 60 201228842 等仏基作為γ ’從離子性聚合物的酸度之觀點，較理想為-c〇2-、-s〇2-及-Ρ〇3-，更理想為_c〇”作為γ1，從離子性聚合物的安雜之觀點，較理想為心2_、_SG3_、 -Ρ〇3·。式⑴中’Μ表7F金屬陽離子或具有或無取代基之按陽離子。作為金屬陽離子，較理想為1價、2價或3價的陽離子。作為金屬陽離子，可列舉Li、Na、K、cs、Be、Mg、 Ca、Ba、Ag、AhBi、Cu、Fe、Ga、Mn、pbSn、Tiv、 w、+Y、Yb、Zn及Zr等的陽離子，較理想為Li+、Na+、κ+、 Cs、Ag、Mg2+及Ca2+。作為銨離子可具有的取代基，例如可列舉甲基、乙基、丙基、異丙基、正_丁基、異丁基及第 3 丁基等碳原子數丨至1〇的烷基。式⑴中，Z1 表示「、C1-、Br-、r、〇lr、Ras〇3_、Ra·、 CIO3 Cl〇2、ci〇3、ci〇4、scff、CN-、、S〇42_、HS〇r.、 PO4、HPO42、Η2ΡΟΓ、BFr 或 PF6-。式（1)中，nl表示〇以上的整數。從原料單體的合成之觀點，nl較理想為Q至8的整數，更理想為q至2的整數。數式⑴中’ al表示！以上的整數。Μ表示〇以上的整以使式⑴所不的基之電荷為〇的方式選擇以及bi。屈J如 Y 為 C〇2、~s〇3、-S〇2、-p〇3-或—⑽a)3-，…為 i 價金陽離子或具有或無取代基之銨陽離子，z1表示Γ、cr、 1 OH、R S〇3、Rac〇〇-、C1(T、ci〇2-、C1(V、Cl〇4-、 323545 61 201228842 SCN、CN、Nor、HSOr、H2p〇4-、BF4-或 PF6—之情況，選擇滿足 al-bl + 1。Y 為_C〇2、_s〇3、-S〇2、_P〇3 或-B(Ra)3，Μ1 為 2 價金屬陽離子，z1 為 f—、Cl、Br_、Γ、OH'、RaS〇3_、 RaC00—、CIO—、C1(V、Cl〇3-、CUV、SCN_、CfT、N〇3—、HS(V、 H2P(V、BFr或 PF6_之情況，選擇滿足 bl=2xal-l。Y1 為-C(V、 -S(V、-S(V、-P(V或~B(Ra)3-，M1 為 3 價金屬陽離子，Z1 為 F-、Cr、Br、Γ、〇『、RaS〇3-、Rac〇〇.、CIO-、Cl〇2.、C1(V、 C1〇4_、SCN_、CfT、N〇3-、HS〇4_、h2P〇4-、BFr或 PFr之情況，零選擇滿足 bl=3xa卜 1。γΐ 為 _c〇2_、-S〇3-、-S(V、-ΡΟΓ 或 -B(RaV ’ M1為1價金屬陽離子或具有或無取代基之銨陽離子’ Ζ1為SOt或HPOf之情況，選擇滿足al=2xbm。表示 al及Μ的關係之上述任一數學式，ai較理想為1至5的整數’更理想為1或2。The monovalent heterocyclic group means an atomic group remaining by removing one ruthenium atom from the heterocyclic compound. The heterocyclic compound refers to an organic compound having a cyclic structure. The element constituting the ring includes not only a carbon atom but also an oxygen atom, a sulfur atom, a nitrogen atom, a filled atom, a shed atom, a broken atom, a selenium atom, or a ruthenium. An organic compound of a hetero atom such as an atom or an arsenic atom. The monovalent heterocyclic group may have a substituent. The monovalent heterocyclic group has a carbon number of usually from 3 to 60, more preferably from 3 to 20. The number of carbon atoms in the monovalent heterocyclic group does not include the number of carbon atoms of the substituent. As a monovalent heterocyclic group, for example, thienyl group 59 323545 201228842 (thienyl), Ci to Ci2, phenyl group, lalotyl, furyl group, π ratio bite group, Ci to Ci2 base ratio, bite base, building Pyridazinyl, pyrimidyl, pyrazinyl, triazinyl, pyrrolidyl, piperidyl, quinolyl, and Isoquinolyl. Among them, a thienyl group, a C! to C1Z alkylthiophenyl group, a pyridyl group, and a (1 to C1Z alkyl pyridyl group are preferred. Further, as the monovalent heterocyclic group, a monovalent aromatic heterocyclic group is preferable. The term "substituted carboxyl group" means a group in which a hydrogen atom of a carboxyl group is substituted with an alkyl group, an aromatic group, an aryl group or a monovalent heterocyclic group, that is, a formula: -C〇0)0R* (wherein R* represents A group represented by an alkyl group, an aryl group, an arylalkyl group or an anthracene ring. The substituted carboxyl group has a carbon number of usually 2 to 6 Å and a phase of 2 to 48. The aforementioned alkyl group, aryl group, arylalkyl group or fluorene heterocyclic ring-' may have a substituent. The number of carbon atoms does not include the substituent of the alkyl group, the aryl group or the monovalent heterocyclic group, and the number of carbon atoms is a substituted wire, and examples thereof include a methoxy group and an ethoxy group. rail. As a base county, isopropoxy county, butoxy group, isobutoxy ^ endooxy 2 -butoxy county, 3 -butoxy ketone, pentyloxy group, hexanthene, diradyl, cyclohexyl Oxygen, heptyloxy, octyloxy, succinyloxy, decyloxy, decyloxy, 3,7-l-methylcarbyl, dodecyloxycarbonyl, trifluoro Methoxycarbonyl, pentafluoro = > gas based, perfluorobutoxy silk, perfluorohexyloxy slit, perfluorolactyl phenoxy county, naphthyloxy and oxy ketone. 4 base, in the formula (1), 'r denotes 3'_s〇2', 3 or Liu, 323545 60 201228842, etc. The thiol group as γ' is preferably -c〇2-, -s from the viewpoint of the acidity of the ionic polymer. 〇2- and -Ρ〇3-, more preferably _c〇" as γ1, from the viewpoint of the ionic polymer, it is preferable that the heart is 2_, _SG3_, -Ρ〇3·. Table 7F metal cation or cation with or without a substituent. The metal cation is preferably a monovalent, divalent or trivalent cation. Examples of the metal cation include Li, Na, K, cs, Be, Mg, The cations of Ca, Ba, Ag, AhBi, Cu, Fe, Ga, Mn, pbSn, Tiv, w, +Y, Yb, Zn and Zr are preferably Li+, Na+, κ+, Cs, Ag, Mg2+ and Ca2+. Examples of the substituent which the ammonium ion may have include, for example, alkane having a carbon number of from 1 to 10 such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group, an isobutyl group, and a third butyl group. In the formula (1), Z1 represents ", C1-, Br-, r, 〇lr, Ras〇3_, Ra·, CIO3 Cl〇2, ci〇3, ci〇4, scff, CN-, S〇42_ , HS〇r., PO4, HPO42, Η2ΡΟΓ, BFr or PF6 In the formula (1), nl represents an integer of 〇 or more. From the viewpoint of synthesis of a raw material monomer, nl is preferably an integer of Q to 8, more preferably an integer of q to 2. In the formula (1), 'al represents The above integer is Μ Μ Μ 〇〇〇〇〇选择选择选择选择选择选择选择选择 bi bi bi 如如如如如如如如如如如如如如如如如如如如如如如如如如如如如如〇3- or -(10)a)3-,...is an i-valent gold cation or an ammonium cation with or without a substituent, z1 represents Γ, cr, 1 OH, RS〇3, Rac〇〇-, C1 (T, ci〇 2-, C1 (V, Cl〇4-, 323545 61 201228842 SCN, CN, Nor, HSOr, H2p〇4-, BF4- or PF6-, choose to satisfy al-bl + 1. Y is _C〇2 , _s〇3, -S〇2, _P〇3 or -B(Ra)3, Μ1 is a 2-valent metal cation, z1 is f-, Cl, Br_, Γ, OH', RaS〇3_, RaC00-, CIO —, C1 (V, Cl〇3-, CUV, SCN_, CfT, N〇3—, HS (V, H2P (in the case of V, BFr or PF6_, choose to satisfy bl=2xal-l. Y1 is -C ( V, -S(V, -S(V, -P(V or ~B(Ra)3-, M1 is a trivalent metal cation, Z1 is F-, Cr, Br, Γ, 〇", RaS〇3- Rac〇〇. CIO-, Cl〇2., C1 (V, C1〇4_, SCN_, CfT, N〇3-, HS〇4_, h2P〇4-, where the PFr BFr or zero satisfying a bl = 3xa BU 1. Ϊ́ΐ is _c〇2_, -S〇3-, -S(V, -ΡΟΓ or -B (RaV 'M1 is a monovalent metal cation or an ammonium cation with or without a substituent Ζ1 is SOt or HPOf, The selection satisfies a=2xbm. Any of the above mathematical expressions indicating the relationship between al and ,, ai is preferably an integer of 1 to 5, more preferably 1 or 2.

Ra表示具有或無取代基之碳原子數1至3〇的烷基或具有或無取代基之碳原子數6至50的芳香基。作為該些基可 φ 具有的取代基，可列舉關於前述Q1例示的取代基相同的基。於存在複數個取代基之情況，該些可為相同，亦可為相異。作為Ra，例如可列舉曱基、乙基、丙基、異丙基、丁基、異丁基、第2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基及月桂基等碳原子數丨至2〇的嫁基’以及苯基、1-萘基、2-萘基、1-蒽基、2-惹基及 9-蒽基等碳原子數6至30的芳香基。作為式（1)所示的基，例如可列舉以下的基。 323545 62 201228842 -COOM* —CH2-COOM* 一(CH2)2-C〇〇'M* —(CH2)3-COOM* —(CH^-COOM* -(CH2)5-COO*M*· — (CH2)e-C001Vr —(CH；i>7-C〇aM* —(CHzJe-COOM* -O—CH2-COO'M+ —o—(CH2)2-COO'M+ —O—(CHjh-000"^ ~0—(CH2>4-C0° M* -0-(CH2)5-COOM* —0-(CH2)e-C0ffM* —0-(CH2)7-C00*M* —0-(CH2)e-C00M*Ra represents an alkyl group having 1 to 3 Å carbon atoms with or without a substituent or an aromatic group having 6 to 50 carbon atoms having or without a substituent. The substituent which the base φ has may be the same as the substituent exemplified in the above Q1. Where a plurality of substituents are present, the may be the same or may be different. Examples of Ra include a mercapto group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, a ternary butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, and an octyl group. Carbonyl groups such as fluorenyl, fluorenyl and lauryl groups having a carbon number of 2 to 2, and carbons such as phenyl, 1-naphthyl, 2-naphthyl, 1-indenyl, 2-pyryl and 9-fluorenyl An aromatic group having 6 to 30 atoms. Examples of the group represented by the formula (1) include the following groups. 323545 62 201228842 -COOM* —CH2-COOM* I(CH2)2-C〇〇'M* —(CH2)3-COOM* —(CH^-COOM* -(CH2)5-COO*M*· — (CH2)e-C001Vr —(CH;i>7-C〇aM* —(CHzJe-COOM* -O—CH2-COO'M+ —o—(CH2)2-COO'M+ —O—(CHjh-000&quot ;^ ~0—(CH2>4-C0° M* -0-(CH2)5-COOM* —0-(CH2)e-C0ffM* —0-(CH2)7-C00*M* —0-( CH2)e-C00M*

COOM+ ，MOOC ~O~C00M+ ~0 ""Ο —S031W*· — CH2-S03-M* —{CH2)2-S〇3lVr —(CH2)3-S〇iM* —(CH2)*-S03-M* —(CHA-SO^ —(CH2)e-S〇3lvr —(CH2)广 S〇3'M+ —(CH2>e-S03-M+COOM+ ,MOOC ~O~C00M+ ~0 ""Ο —S031W*· — CH2-S03-M* —{CH2)2-S〇3lVr —(CH2)3-S〇iM* —(CH2)*- S03-M* —(CHA-SO^ —(CH2)eS〇3lvr —(CH2)Guang S〇3′M+ —(CH2>e-S03-M+

—O—CH2-SO3M* —O—(CH2h-S〇3'M* 一〇—(CHA-SCVWT —Ο—(0Η2)4~8031\Λ+ —0-(CH2)s-S03M+ —0-(CH2)6-S〇3*M* —〇-{CH2)/-S〇3'M+ —0-(〇Η2)β-5〇3·Μ*—O—CH2-SO3M* —O—(CH2h-S〇3'M* 一〇—(CHA-SCVWT—Ο—(0Η2)4~8031\Λ+—0-(CH2)s-S03M+ —0- (CH2)6-S〇3*M* —〇-{CH2)/-S〇3'M+ —0-(〇Η2)β-5〇3·Μ*

so3*m+ +m 03S<} M = U.Na. K.Cs,N(GH3>4 —式（2)所示的基一式（2)中，作為Q2所示的2價有機基，可列舉與前述 Q1所示的2價有機基之例相同的基。作為Q2，從原料單體的合成容易度之觀點，以2價飽和烴基、伸芳基及伸燒氧基。 Q2所示的2價有機基，可具有取代基。作為該取代基，可列舉前述Q1所示的2價有機基可具有的取代基等。存在複數個取代基之情況，該些可為相同，亦可為相異。式（2)中，Y2表示碳陽離子、銨陽離子、膦醯 (phosphonyl)陽離子、確醯（sulfonyl)陽離子或蛾鑽 (iodonium)陽離子。 323545 63 201228842 可列舉作為碳陽離子，例如 -c+r2 (式中，R表示烷基或芳香基。複數個R可為相同，或者可為相異。）所示的基。作為銨陽離子，例如 -n+r3 (式中，R表示烷基或芳香基。複數個R可為相同，或者可為相異。）所示的基。作為膦醯（phosphonyl)陽離子，例如 -P+R3 (式中，R表示烷基或芳香基。複數個R可為相同，或者可為相異。）所示的基。作為續醯（sulfonyl)陽離子，例如 -S+R2 (式中，R表示烷基或芳香基。複數個R可為相同，或者可為相異。）所示的基。作為峨鏽（iodonium)陽離子，例如 -I+R2 (式中，R表示烷基或芳香基。複數個R可為相同，或者可為相異。）所示的基。式（2)中，從原料單體的合成容易度以及原料單體與離子性聚合物對空氣、濕氣或熱的安定性之觀點，Y2為碳陽離子、銨陽離子、膦醯（phosphonyl)陽離子及續隨 (sulfonyl)陽離子較理想，更理想為銨陽離子。 64 323545 201228842 離子具有或無取代基之㈣子，例如1^、如、1(、（：^,;為1價、2價或3價的離 Cu，，，，、％;、g、、Ca、Ba，、M、Bi、的陽離子。作為銨陽離子 ^、Y、Yb、Zn及Zr等基、乙基、丙基、異丙基、：m例如可列舉甲碳原子數UH)的燒基。丁基、異丁基及第3 丁基等 OH-、RbS(V、Rbc〇〇-、 ‘ N0「、S〇42—、HSOr、 n2較理想為〇至6 b2表示〇以上的整式（2)中 ’ M2 表示 F-、Cl-、Br-、p ci〇-、cuv、ci〇3-、ci〇4-、scn-、cn- P〇43-、HP〇42'、H2P(V、BFr 或 ppv。式（2)令’ n2表示〇以上的整數的整數，更理想為〇至2的整數。式（2)中’ a2表示1以上的整數數。以使式（2)所示的基之電荷為〇的方式選擇a2及b2。 •例如 M2 為 Γ、Cr、Br、I —、OH—、RbS〇3—、RbC0(T、CIO—、CHV、 CUV、Cl〇4_、SCN—、CN_、mV、HSOr、Η2Ρ0Γ、BF4—或 PFr 的情況，Z2為1價金屬離子或具有或無取代基之銨離子時選擇滿足a2=b2+l，Z2為2價金屬離子時選擇滿足 a2=2xb2+l ’ Z2為3價金屬離子時選擇滿足a2=3xb2H。M2 為SO?—、HPO42-的情況，z2為1價金屬離子或具有或無取代基之銨離子時選擇滿足b2=2xa2-l，Z2為3價金屬離子時選擇滿足2xa2= 3xb2+l的關係。表示a2及b2的關係之上述任一數學式’ a2較理想為1至3的整數，更理想為1或 65 323545 201228842So3*m+ +m 03S<} M = U.Na. K.Cs, N (GH3), in the formula (2) represented by the formula (2), as the divalent organic group represented by Q2, The same group as the above-mentioned example of the divalent organic group represented by the above-mentioned Q1. As a Q2, a divalent saturated hydrocarbon group, an extended aryl group, and an extended alkyl group are derived from the viewpoint of easiness of synthesis of a raw material monomer. The valent organic group may have a substituent. Examples of the substituent include a substituent which the divalent organic group represented by the above Q1 may have, and the like, and a plurality of substituents may be present, and the same may be used. In the formula (2), Y2 represents a carbocation, an ammonium cation, a phosphonyl cation, a sulfonyl cation or an iodonium cation. 323545 63 201228842 may be cited as a carbocation such as -c+ R2 (wherein R represents an alkyl group or an aryl group. The plurality of R may be the same or may be different.) The group is shown. As an ammonium cation, for example, -n+r3 (wherein R represents an alkyl group or Aromatic group. A plurality of R groups may be the same or may be different.) The group shown. As a phosphonyl cation, such as -P+ R3 (wherein R represents an alkyl group or an aryl group. The plurality of R's may be the same or may be different.) The group is shown. As a sulfonyl cation, for example, -S+R2 (wherein, R Represents an alkyl group or an aryl group. A plurality of R's may be the same or may be a different base.) As an iodonium cation, for example, -I+R2 (wherein R represents an alkyl group or an aromatic group) The plurality of R may be the same, or may be different.) The base shown in the formula (2), the ease of synthesis from the raw material monomers and the raw material monomer and the ionic polymer to air, moisture or heat From the standpoint of stability, Y2 is preferably a carbocation, an ammonium cation, a phosphonyl cation, and a sulfonyl cation, more preferably an ammonium cation. 64 323545 201228842 Ionic with or without a substituent (IV), for example 1^,如如,1(,(:^,; is a monovalent, divalent or trivalent cation from Cu,,,,,%;, g, Ca, Ba, M, Bi, as ammonium) Examples of the base of the cations such as cations, Y, Yb, Zn and Zr, and the ethyl group, the propyl group, the isopropyl group and the : m group include a group having a methyl group number of carbon atoms (UH). OH-, RbS (V, Rbc〇〇-, 'N0", S〇42-, HSOr, n2 are preferably 〇 to 6 b2, and the above formula (2) 'M2 stands for F-, Cl-, Br-, p ci〇-, cuv, ci〇3-, ci〇4-, scn-, cn-P〇43-, HP〇42', H2P (V, BFr Or ppv. The formula (2) is such that 'n2' represents an integer of 〇 or more, and more preferably an integer of 〇2. In the formula (2), 'a2' represents an integer number of 1 or more. A2 and b2 are selected in such a manner that the charge of the group represented by the formula (2) is 〇. • For example, M2 is Γ, Cr, Br, I —, OH—, RbS〇3—, RbC0 (T, CIO—, CHV, CUV, Cl〇4_, SCN—, CN_, mV, HSOr, Η2Ρ0Γ, BF4—or In the case of PFr, when Z2 is a monovalent metal ion or an ammonium ion with or without a substituent, it is selected to satisfy a2=b2+l, and when Z2 is a divalent metal ion, it is selected to satisfy a2=2xb2+l 'Z2 is a trivalent metal ion. Select a2=3xb2H. When M2 is SO?-, HPO42-, when z2 is a monovalent metal ion or an ammonium ion with or without a substituent, it is selected to satisfy b2=2xa2-l, and Z2 is selected as a trivalent metal ion. 2xa2=3xb2+l relationship. Any of the above mathematical expressions 'a2' representing the relationship between a2 and b2 is preferably an integer of 1 to 3, more preferably 1 or 65 323545 201228842

Rb表示具有或無取代基之碳原子數1至30的烷基或具有或無取代基之碳原子數6至50的芳香基。作為該些基可具有的取代基，可列舉與前述Q1例示的取代基相同的基。於存在複數個取代基之情況，該些可為相同，亦可為相異。作為Rb，例如可列舉甲基、乙基、丙基、異丙基、丁基、異丁基、第2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基及月桂基等碳原子數1至20的烷基， _ 以及苯基、卜萘基、2-萘基、1-蒽基、2-蒽基、9-蒽基等碳原子數6至30的芳香基。作為前述式（2)所示的基，例如可列舉以下的基。Rb represents an alkyl group having 1 to 30 carbon atoms or a aryl group having 6 to 50 carbon atoms which may have a substituent or a substituent. The substituent which the base group may have is the same as the substituent exemplified in the above Q1. Where a plurality of substituents are present, the may be the same or may be different. Examples of Rb include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a t-butyl group, a butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, and an octyl group. An alkyl group having 1 to 20 carbon atoms such as an anthracenyl group, a fluorenyl group, and a lauryl group, and a carbon atom number of 6 and a phenyl group, a naphthyl group, a 2-naphthyl group, a 1-fluorenyl group, a 2-fluorenyl group, and a 9-fluorenyl group. An aromatic group of up to 30. Examples of the group represented by the above formula (2) include the following groups.

66 323545 201228842 —NMeaEt^X- —CH2-NMe2EfX- 一 {CHih-NMejErtI- -<CH2)3-NMe2EfX· —(CHiiU-NMeaEfX-—(CH2)5-NMe2EfX· 一 (CH2)e-NMe2Et+X· —(CH2>广 NMe2Et*X- —(CH^-NMe^^X- —O-CHa-NMezEt^--〇-(ΟΗ2)2-ΝΜβ2ΕΛ(· -〇-(CHjJ3-NMe2Et+X* —〇-(ΟΗ2)4-ΝΜβ2ΕΛ(- —〇-(CH2)s-NMe2EfX- -O-tCH^e-NMejErtt* -〇-(ΟΗ2)7-ΝΜβ2εϊ"χ- —〇-(ΟΗ2)β-ΝΜβ2Ε^* -Η〇-ΝΜβ2ΕΛΓ —^ NMe2EfX'66 323545 201228842 —NMeaEt^X- —CH2-NMe2EfX- a {CHih-NMejErtI- -<CH2)3-NMe2EfX·—(CHiiU-NMeaEfX-—(CH2)5-NMe2EfX· one (CH2)e-NMe2Et+ X·—(CH2>Guang NMe2Et*X-—(CH^-NMe^^X-—O-CHa-NMezEt^--〇-(ΟΗ2)2-ΝΜβ2ΕΛ(· -〇-(CHjJ3-NMe2Et+X* -〇-(ΟΗ2)4-ΝΜβ2ΕΛ(--〇-(CH2)s-NMe2EfX- -O-tCH^e-NMejErtt* -〇-(ΟΗ2)7-ΝΜβ2εϊ"χ--〇-(ΟΗ2)β- ΝΜβ2Ε^* -Η〇-ΝΜβ2ΕΛΓ —^ NMe2EfX'

—NHMe2+X* —CH2-NHMe，X. 一一(CHjJj-NHMej^X- —(CH^-NHMej^X- —(CH2)6—N HMe2+X* 一(CHjJe-NHMej^X* 一(CH^7-NHMe2',X* —(CH^e-ΝΗΜβ2*Χ*—NHMe2+X* —CH2-NHMe, X. One by one (CHjJj-NHMej^X-—(CH^-NHMej^X-—(CH2)6—N HMe2+X* one (CHjJe-NHMej^X* one (CH^7-NHMe2', X* —(CH^e-ΝΗΜβ2*Χ*

_〇-_〇Η2-ΝΗΜβ2+Χ* —O-tCH^-NHMe^- -0-<CHJ,-NHMe2+X- 一 O—(CHj)4-NHMe2+X- —〇-(CH2)5-NE^X- -〇-ί〇Η2)β-ΝΕ^· -Ο-^Η^-ΝΗΜβ/Χ· _CMCH^-NHMe/X·_〇-_〇Η2-ΝΗΜβ2+Χ* —O-tCH^-NHMe^- -0-<CHJ,-NHMe2+X-O-(CHj)4-NHMe2+X--〇-(CH2) 5-NE^X- -〇-ί〇Η2)β-ΝΕ^· -Ο-^Η^-ΝΗΜβ/Χ· _CMCH^-NHMe/X·

NHMej^X* -X+Me2HN —^-NHMe2^· — —NEtj+X" —CH2~NE1&+X· 一(CH2)2-NEta+X* —{ΟΗ^-ΝΕ^+Χ* —(CH^-NEtj^X*NHMej^X* -X+Me2HN —^-NHMe2^· — —NEtj+X"—CH2~NE1&+X· one (CH2)2-NEta+X* —{ΟΗ^-ΝΕ^+Χ* —( CH^-NEtj^X*

(ΟΗ^β-ΝΕ^' ~~(CH^e-NE^X· —(CHA-NEV^X. —(CHJe-NEV*X 一 0_CH2-NEVX- —〇-(CH2)2-NEb*X· —O-iCH^-NE%^- 一 0_(CHz)4-NEli/X· —〇-(CH2)5-NEt3+X- -O-iCH^e-NE^+X* 一〇-(CH2)7-NEt5*X· —O-tCHaJe-NEtj^-(ΟΗ^β-ΝΕ^' ~~(CH^e-NE^X·—(CHA-NEV^X. —(CHJe-NEV*X_0_CH2-NEVX-——〇-(CH2)2-NEb*X · —O-iCH^-NE%^- A 0_(CHz)4-NEli/X·—〇-(CH2)5-NEt3+X- -O-iCH^e-NE^+X* 一〇-( CH2)7-NEt5*X·—O-tCHaJe-NEtj^-

NEt3*X- 'X^EtaN -〇-ne^xNEt3*X- 'X^EtaN -〇-ne^x

Me-CMd Et = CH2CH5 X : F,CI· Br, I, BPh4,CH3COO, CF^SO；» 323545 67 201228842 —NHEt2+X' —CH2-NHEt2+X* 一<CH2)2-NHEt2+X' 一(CH2h-NHEt2*X· —(CHd4-NHEt24X* —(CH^s-HHEtz^* —(CH2)e-NHEt2+X' —1(CH2)7-NHEt2+X· —<CH2)8_NHEt2+X. —〇—CH2-NHEt2*X' —〇—(CH2)2-NHEt2+X· —O —(CH2h-NHEt2+X· —O —(CH^-WEt/X· —〇-(CH2fe-NHEt2*X· —〇-<CH2)e-NHEt2*X· —O-iCHzJz-NHEta^· —〇-(CH2)8-NHEt2+X·Me-CMd Et = CH2CH5 X : F, CI· Br, I, BPh4, CH3COO, CF^SO; » 323545 67 201228842 —NHEt2+X' —CH2-NHEt2+X* a <CH2)2-NHEt2+X '一(CH2h-NHEt2*X·—(CHd4-NHEt24X* —(CH^s-HHEtz^* —(CH2)e-NHEt2+X′ —1(CH2)7-NHEt2+X· —<CH2) 8_NHEt2+X. —〇—CH2-NHEt2*X′ —〇—(CH2)2-NHEt2+X·—O—(CH2h-NHEt2+X·—O—(CH^-WEt/X·—〇-( CH2fe-NHEt2*X·—〇-<CH2)e-NHEt2*X·—O-iCHzJz-NHEta^·—〇-(CH2)8-NHEt2+X·

WEt2*X· X^EtjHN HEt2+X*WEt2*X· X^EtjHN HEt2+X*

一NEtPh24X- —CH2-NEtPh2+X* 一 (CHA-NEtPha^X· —(CH^ 一 NEtRi2’X* 一{CHjJi^NEtPhi'X' (CH2)5-NEtPh2*X· 一(CH2)e~NEtPh2*X· (CH2)7**NEtPh2*X* 一(CHjfe-NEtPhj^X· r—O—CH2-NEtPh 2+X- 一〇-(CH2)2-NEtPh2+X· —O -(CH2h-N EtPh2+X' —〇 —(CH 2)4-NEtPh2+X' 一O —(Ch^s-NEtR^^X--〇-(CH2)e-NEtPh2*X- —〇-(CH^7-NEtf=h2+X' ~〇-(CH2)8-NEtPh2+X*A NEtPh24X--CH2-NEtPh2+X* one (CHA-NEtPha^X·-(CH^-NEtRi2'X*-{CHjJi^NEtPhi'X' (CH2)5-NEtPh2*X· one (CH2)e~ NEtPh2*X· (CH2)7**NEtPh2*X* I (CHjfe-NEtPhj^X·r-O-CH2-NEtPh 2+X- 〇-(CH2)2-NEtPh2+X·—O -(CH2h -N EtPh2+X' -〇-(CH 2)4-NEtPh2+X' -O -(Ch^s-NEtR^^X--〇-(CH2)e-NEtPh2*X--〇-(CH^ 7-NEtf=h2+X' ~〇-(CH2)8-NEtPh2+X*

NEtPha^· *X*Ph2EtN -^Q-NEtPh2*X-NEtPha^· *X*Ph2EtN -^Q-NEtPh2*X-

—NHPha^X' —CH2-NHPh2+X· —<CH2)2-NHPh2+X· —<CH2)3-NHPh2*X- —(CH2)4-NHPh2V —<CH2)5-NHPh2+X* —(CH2)e-NHPh2+X- —(CH^-NHPhj^* —(CHjJg-NHPhj^X- 一〇-CH2-NHPh2+X' —<CH2)2-NHPh2*X· 一 0-(CH2>3-NHPh2+X- — O —(CH2>4-NHPh2+X-—NHPha^X' —CH2-NHPh2+X·—<CH2)2-NHPh2+X·—<CH2)3-NHPh2*X- —(CH2)4-NHPh2V —<CH2)5-NHPh2+ X* —(CH2)e-NHPh2+X-—(CH^-NHPhj^* —(CHjJg-NHPhj^X- 一〇-CH2-NHPh2+X' —<CH2)2-NHPh2*X· 一0 -(CH2>3-NHPh2+X--O-(CH2>4-NHPh2+X-

—〇-(CH2>5 一 NHPI^^X-—^-NHPh2*X- O-(CH 分 e-NHPh2+X· NHPh2<X' ~〇-<CH2)7-NHPh2*X' —〇-(CH2)8-NHPh24X--〇-(CH2>5-NHPI^^X--^-NHPh2*X-O-(CH points e-NHPh2+X· NHPh2<X' ~〇-<CH2)7-NHPh2*X' -〇 -(CH2)8-NHPh24X-

Et = CH2CH3 Ph = CeH5 X = F,C|, Br.l, BPh4. CH^CCX), CF3SO3, _式（3)所示的基一式（3)中，作為Q3所示的2價有機基，可列舉與前述 Q1所示的2價有機基之例示的基。作為q3，從原料單體的合成容易度之觀點，以2價飽和烴基、伸芳基及伸烧氧基 323545 68 201228842 較理想 Q3所示的2價有機其〜可列舉Qi所示的2價^；·具I取代基。作為該取代基，個取代基讀況，祕取代鱗。存在複數 Q3所示的2價有機基Γ，亦可為相異。 n3表示〇以上的：乂理想為-(CH2)-所示的基。更理想為0至8的整數β數。113較理想為0至20的整數，式（3)中，Y3 表示〜ci\f γ ^、 (9)、(1〇)、(⑴或(12)所V 的基。、(5)、(6)、⑺、⑻、式（4)、（5)、（6)、m /、中，作為R’所示的2價炉烏8⑼、（1Q)、⑴）及⑽ U-伸两基、1>3-伸=基/例如可列舉亞甲基、伸乙基、 , 土 1，2-伸丁基、1，3-伸丁基、1 4- 伸丁基、1，5-伸戊基、1 β ’ 伸十二燒基及該些基的至ΓΆ1，9—伸壬基、n 等的具有或無取代基⑽子被取代基取代之基 ”'、灭原子數1至50之2價飽和烴基；伸乙稀基（ethenylene)、伸丙稀基、3伸丁烯基、2_伸丁烯基、2-伸戊烯基、2-伸己縣、2_伸壬烯基、2_伸十二烯基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數2至5〇之伸烯基以及包含伸乙炔基且具有或無取代基之碳原子數2至50之2價不飽和烴基；伸環丙基、伸環丁基、伸環戊基、伸環己基、伸環壬基、伸環十二炫基、伸降冰片基（norbornylene)、伸金剛烧基（adamantylene)及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數3至50之2價環 69 323545 201228842 狀飽和烴基；1，3-伸苯基、1，4-伸苯基、1，4〜伸荠美、丨5_ 伸萘基、2, 6-伸萘基、聯苯_4, 4, _二基及該些至少^ 個氫原子被取代基取代之基等的具有或無取代^之碳^子數6至50之伸芳基；以及伸甲氧基、伸乙氧基、土伸丙1基、伸丁氧基、伸戊氧基、伸己氧基及齡基h少丨個^原子被取代基取代之基等的具有或無取代基之嗥原子數^至 50之伸烷氧基。 ’、作為前述取代基，可列舉例如關於前述Q1的說明中舉例之取代基等。存在複數個取代基之情況，該些可為相同，可為相異。〜 … ^(4)：(5).(6).(7).(8).(9).(1〇)^(ii)^(i2) 中作為R所示的1價烴基，例如可列舉甲義、乙某、丙基、異丙基、丁基、異丁基、第2 丁基、第=丁某:戊己基、庚基、辛基、壬基、癸基、月二及 u二基的至夕1個氫原子被取代基取代之基等取代基之碳原子數1至2G的絲；以及苯基^ 蔡基、卜葱基、2-葱基、9—葱基及該些基的至少^氮原子破取代絲代之鱗的具有或無取代基之⑼子數6至 3〇的芳香基等。作為R"所示的j價煙基，從離子性聚合物的溶解性的觀點，以甲基、乙基、苯基、卜萘基及2-萘基較理想。作為前述取代基，可列舉關於前述Q1的說明中舉例之取代基等。存在複數餘代基之n該些可為相同，亦可為相異。式（5)中，作為R，’’所示的3價烴基，例如甲烷三基 323545 70 201228842 (methanetriyi)、乙烷三基、12 3一丙烷三基、12 4一丁烧三基、1，2,5-戊烷三基、ι，3,5-戊烷三基、1，2,6-己烷二基、1，3, 6〜己烷三基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至20的烷三基；以及1，2, 3-苯三基、1，2, 4-苯三基、1，3, 5-苯三基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至30的芳香基等。作為R，，，所示的3 • 價:^基從離子性聚合物的溶解性之觀點，較理想為甲烧二基、乙烷二基、1，2, 4-苯三基及1，3, 5-苯三基。作為前述取代基，可列舉關於前述Q1的說明中舉例之取代基等。存在複數個取代基之情況，該些可為相同，亦可為相異。式（4)、（5)、（6)、（7)、（8)、（9)、（1〇)、（11)及（12) 中，作為r，從離子絲合物的溶解性之觀點，較理想為甲基、乙基、苯基、1 一萘基及2_萘基。式（4)及（5)中，a3表示1以上的整數，較理相為3 # 的整數。式⑹、⑺、⑻、（9)、⑽、‘及=)3中至 a4表不〇以上的整數。於式（6)，a4為〇至別的整數較理想，3至20的整數更理想。於式⑺、（8)、（9)及（1〇)， Μ為0至1G的整數較理想，0至5的整數更理想。於式 (U) ’a4為〇至20的整數較理想，3至2〇的整數更理想。於式（12)，a4為0至20的整數較理想，〇至1〇的整數更理想。作為Y3，從原料單體的合成容易度之觀點，較理想為 CN、式（4)所不的基、式（6)所示的基、式（1〇)所示的基、 323545 71 201228842 式（11)所示的基，更理想為式（4)所示的基、式（6)所示的基及式（11)所示的基，特別理想為以下的基。 —〇iCH2CH2〇)2Me —0-ί〇Η2ΟΗ^Ο)3Μβ —〇iCH2CHP)4MeEt = CH2CH3 Ph = CeH5 X = F, C|, Br.l, BPh4. CH^CCX), CF3SO3, _ Formula (3), in the formula (3), as a divalent organic group represented by Q3 The exemplified group of the divalent organic group represented by the above Q1 can be mentioned. As q3, from the viewpoint of easiness of synthesis of the raw material monomers, the divalent saturated hydrocarbon group, the extended aryl group, and the extended alkyl group 323545 68 201228842 are more preferably a divalent organic compound represented by Q3. ^;· has an I substituent. As the substituent, the substituent reads, and the scale replaces the scale. There is a divalent organic hydrazine represented by a plurality of Q3, which may be different. N3 represents 〇 or more: 乂 is ideally a group represented by -(CH2)-. More preferably, it is an integer β number of 0 to 8. 113 is preferably an integer of 0 to 20, and in the formula (3), Y3 represents a base of ~ci\f γ ^, (9), (1〇), ((1) or (12) V., (5), (6), (7), (8), (4), (5), (6), m /, in the case of R', the two-valent furnace 8 (9), (1Q), (1)) and (10) U-extension The group, 1 > 3-extension = group / for example, a methylene group, an ethyl group, a 1,2-butyl group, a 1,3-butylene group, a 4-butylene group, a 1,5- a pentyl group, a 1β' extended dodecanyl group, and a group of the substituents having a substituent of a substituent such as a ruthenium 1,9-anthracene group, n, etc., substituted by a substituent, and an atomic number of 1 50% divalent saturated hydrocarbon group; ethenylene, propylene, 3, butenyl, 2_butenyl, 2-extenyl, 2-extension, 2_ An alkenyl group, a 2-decandenyl group, and an alkenyl group having 2 to 5 carbon atoms and having an ex-ethynyl group having or having no substituent, wherein at least one hydrogen atom of the group is substituted with a substituent And a divalent unsaturated hydrocarbon group having 2 to 50 carbon atoms with or without a substituent; a cyclopropyl group, a cyclobutene butyl group, a cyclopentylene group, a cyclohexylene group, a fluorenyl group, a ring-shaped 12-ray group, a norbornylene group, an adamantylene group, and a group having at least one hydrogen atom of the group substituted with a substituent, such as a carbon atom having 3 or 50 valence ring 69 323545 201228842 saturated hydrocarbon group; 1,3-phenylene, 1,4-phenylene, 1,4~ 荠美美, 丨5_ stilbene, 2,6-anthranyl, a biphenyl- 4, 4, yl-diyl group and an alkyl group having 6 to 50 carbon atoms having or without a substituent substituted by a substituent; and a methoxy group, An argon atom having or without a substituent, such as an ethoxy group, a propylene group, a pentyloxy group, a pentyloxy group, a hexyloxy group, and an oxime group; Examples of the substituent include, for example, a substituent exemplified in the description of the above Q1, etc. In the case where a plurality of substituents are present, the same may be the same, and may be different. ~ ... ^(4):(5).(6).(7).(8).(9).(1〇)^(ii)^(i2) is a monovalent hydrocarbon group represented by R, For example, amethyst, ethyl, propyl, isopropyl, butyl, a butyl group, a butyl group, a butyl group, a heptyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a ruthenium group, a ruthenium group, and a substituent of a group in which a hydrogen atom is substituted with a substituent. a filament having a carbon number of 1 to 2 G; and a phenyl group; a phenyl group, a lysine group, a 2-onion group, a 9-onion group, and at least a nitrogen atom of the group having a substituted or substituted scale (9) an aromatic group having a number of 6 to 3 Å, etc. As a j-valent smoky group represented by R", from the viewpoint of solubility of an ionic polymer, a methyl group, an ethyl group, a phenyl group, a naphthyl group, and 2- Naphthyl is preferred. Examples of the substituent include a substituent exemplified in the description of the above Q1. There are a plurality of complex bases n which may be the same or different. In the formula (5), a trivalent hydrocarbon group represented by R, '', for example, methane triyl 323545 70 201228842 (methanetriyi), ethane triyl, 12 3 -propane triyl, 12 4 -butylene triyl, 1 , 2,5-pentanetriyl, iota, 3,5-pentanetriyl, 1,2,6-hexanediyl, 1,3,6-hexanetriyl, and at least one of the groups An alkanetriyl group having 1 to 20 carbon atoms with or without a substituent in which a hydrogen atom is substituted with a substituent; and 1,2,3-benzenetriyl, 1,2,4-benzenetriyl, 1, 3, 5-phenyltriyl group and an aromatic group having 6 to 30 carbon atoms having or having no substituent, such as a group substituted with a substituent of at least one hydrogen atom of the group. As R,, the 3 valence shown: from the viewpoint of the solubility of the ionic polymer, it is preferably a methanediyl group, an ethanediyl group, a 1,2,4-benzenetriyl group, and 1, 3, 5-Benzene triyl. The substituents exemplified in the description of the above Q1 and the like are exemplified as the above substituent. Where a plurality of substituents are present, the may be the same or may be different. In the formulas (4), (5), (6), (7), (8), (9), (1), (11), and (12), as the r, the solubility of the ionomer The viewpoint is preferably a methyl group, an ethyl group, a phenyl group, a 1-naphthyl group or a 2-naphthyl group. In the formulas (4) and (5), a3 represents an integer of 1 or more, and the opposite phase is an integer of 3 #. In the formulas (6), (7), (8), (9), (10), and "and =) 3, a4 is not more than the above integer. In the formula (6), a4 is 〇 to other integers, and an integer of 3 to 20 is more desirable. In the formulas (7), (8), (9), and (1), an integer of 0 to 1 G is preferable, and an integer of 0 to 5 is more preferable. It is preferable that the formula (U) 'a4 is an integer of 〇 to 20, and an integer of 3 to 2 更 is more preferable. In the formula (12), a4 is an integer of 0 to 20, and an integer of 〇 to 1〇 is more preferable. From the viewpoint of easiness of synthesis of the raw material monomer, Y3 is preferably a group represented by CN, a formula (4), a group represented by the formula (6), a group represented by the formula (1〇), and 323545 71 201228842. The group represented by the formula (11) is more preferably a group represented by the formula (4), a group represented by the formula (6), and a group represented by the formula (11), and particularly preferably the following group. —〇iCH2CH2〇)2Me —0-ί〇Η2ΟΗ^Ο)3Μβ —〇iCH2CHP)4Me

—〇iCH2CH2p)6Me —〇iCH2CH2p)3H —0-<CH2CHp)6H —0-<CH2CHPfeMe—〇iCH2CH2p)6Me —〇iCH2CH2p)3H —0-<CH2CHp)6H —0-<CH2CHPfeMe

—0-(CH2CHi〇)2H—0-(CH2CHi〇)2H

—0-(CH2CHp)5H—0-(CH2CHp)5H

*——0-( CH2CH 2p)?Me —0-(CH2CH2p)4H*——0-( CH2CH 2p)?Me —0-(CH2CH2p)4H

0 1 -C—0~(〇Η2〇Η2〇 feMe —C一^〇iCH2CH2〇)3Me ——〇iCH2CH2〇)7H 〇 —^C—〇iCH2CH2〇)4Me Χ〇·2—)5Μβ —8—O^CHjCHpJeMe J 一—e 〇 —i—*0-(CH2CHp)2H 」〇_)3h 〇 —5—0-<CH2CHp)4H 0 0 〇 ~~C—〇-<CH2CH2〇)5H —C—〇iCH2CH2〇)^H —C—〇iCH2CH^O}7H 一離子性聚合物中的構造單元一關於本實施態樣的離子性聚合物，較理想為包含選自式（13)所示的構造單元、式（15)所示的構造單元、式（17) • 所示的構造單元及式（20)所示的構造單元所成群中至少1 種構造單元較理想，該些構造單元在全部構造單元中包含 15至100莫耳％更理想。 •式（13)所示的構造單元式（13)中，R1表示具有式（14)所示的基之1價基，Ar1 表示具有或無R1以外的取代基之（2+n4)價芳香族基，n4表示1以上的整數。式（14)所示的基，可直接鍵結於Ar1，或隔著選自亞甲 72 323545 201228842 基、伸乙基、伸丙基、伸丁基、伸戊基、伸已基、伸壬基、伸十二烷基、伸環丙基、伸環丁基、伸環戊基、伸環己基、伸環壬基、伸環十二烷基、伸降冰片基（n〇rb〇rnylene)、伸金剛烷基（adamantylene)及該些基的至少！個氫原子被取代基取代之基等之具有或無取代基之碳原子數丨至5〇之伸烷基；選自氧伸甲基、氧伸乙基、氧伸丙基、氧伸丁基、氧伸戊基、氧伸己基、氧伸壬基、氧伸十二烷基、伸環丙氧基、伸環丁氧基、伸環戊氧基、伸環己氧基、伸環壬氧基、伸環十二烷氧基、伸降冰片氧基、伸金剛烷氧基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之氧伸烷基；具有或無取代基之亞胺基；具有或無取代基之伸矽基；具有或無取代基之伸乙烯基（ethenylene);伸乙炔基；具有或無取代基之甲烷三基；以及氧原子、氮原子、硫原子等雜原子，與AjJ結合。0 1 -C—0~(〇Η2〇Η2〇feMe—C一^〇iCH2CH2〇)3Me——〇iCH2CH2〇)7H 〇—^C—〇iCH2CH2〇)4Me Χ〇·2—)5Μβ—8— O^CHjCHpJeMe J I—e 〇—i—*0-(CH2CHp)2H 〇_)3h 〇—5—0—<CH2CHp)4H 0 0 〇~~C—〇-<CH2CH2〇)5H — C—〇iCH2CH2〇)^H—C—〇iCH2CH^O}7H Structural unit in an ionic polymer—The ionic polymer of the present embodiment preferably contains an excimer selected from the formula (13). At least one structural unit of the group of the structural unit, the structural unit represented by the formula (15), the structural unit represented by the formula (17), and the structural unit represented by the formula (20) is preferable, and the structural unit It is more desirable to include 15 to 100 mol% in all structural units. In the structural unit formula (13) represented by the formula (13), R1 represents a monovalent group having a group represented by the formula (14), and Ar1 represents a (2+n4) aromatic group having a substituent other than R1. The group base, n4 represents an integer of 1 or more. The group represented by the formula (14) may be directly bonded to Ar1 or may be selected from the group consisting of methylene 72 532545 201228842, ethyl, propyl, butyl, pentyl, hexyl, and hydrazine. Base, dodecyl group, cyclopropyl, cyclobutene, cyclopentyl, cyclohexyl, fluorenyl, fluorenyl, decyl, n 〇〇〇 , adamantylene and at least these bases! a hydrogen atom having a substituent substituted by a substituent, etc., having or having no substituent, having a carbon number of from 丨 to 5 Å, and an alkyl group selected from the group consisting of an oxygen-extended methyl group, an oxygen-extended ethyl group, an oxygen-extended propyl group, and an oxygen-extended butyl group. , oxopentyl, oxyhexanyl, oxo, oxetane, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclohexyloxy a group having 1 or less carbon atoms with or without a substituent, such as a fluorenyloxy group, a ferroceneoxy group, an adamantyloxy group, and a group in which at least one hydrogen atom of the group is substituted by a substituent 50 oxoalkylene; imine group with or without a substituent; exocyclic group with or without a substituent; ethenylene with or without a substituent; ethynyl group; with or without a substituent a methane triyl group; and a hetero atom such as an oxygen atom, a nitrogen atom or a sulfur atom, combined with AjJ.

Ar可具有R1以外的取代基。作為該取代基，可列舉關 • 於前述Q1的說明中舉例之取代基。取代基存在複數個之情況’該些可為相同，亦可為相異。作為Ar1具有之R1以外的取代基，從原料單體的合成容易度之觀點，較理想為烷基、烷氧基、芳香基、芳香氧基、幾基及取代幾基。式（13)中’ n4表示1以上的整數^ μ較理想為1至4 的整數’更理想為1至3的整數。式（13)中Ar所示的（2+n4)價芳香族基，可列舉（2+n4) 價芳香族烴基及（2+n4)價芳香族雜環基，以只有碳原子所 323545 73 201228842 構成的（2+n4)價芳香族基以及碳原子與選自氮原子、氮原原子所成群的】個以上的原子所構成之⑵n4)價芳香^較理想1為該（2+n4)價芳香族基，例如可列舉從 ::環二、广 (p一)’、·：Γ、:夫:广 —_等單^ （〇=〇le)環及喔二嗤環縮合之縮合多環成群中2個以上的價基;從選自該單;f ?:r:n4)個氫原子之(2+η4) rpfh彳、的方香環，以單鍵、伸乙烯基或伸乙炔基子之二4:Ϊ結::的芳香環集合，除去(峰環集合相鄰的2個芳縮合多環式芳香環或該芳香基架橋的有橋、伸乙基及錄等2價價基等。式方香環，除去（2+η4)個氫原子之（2+η4)Ar may have a substituent other than R1. As the substituent, a substituent exemplified in the above description of Q1 can be mentioned. There are a plurality of substituents. 'These may be the same or different. The substituent other than R1 of Ar1 is preferably an alkyl group, an alkoxy group, an aryl group, an aromatic oxy group, a aryl group or a substituted group from the viewpoint of easiness of synthesis of a raw material monomer. In the formula (13), 'n4' represents an integer of 1 or more, and more preferably an integer of 1 to 4' is more preferably an integer of 1 to 3. The (2+n4)-valent aromatic group represented by Ar in the formula (13) includes a (2+n4)-valent aromatic hydrocarbon group and a (2+n4)-valent aromatic heterocyclic group, and only the carbon atom is 323545 73 201228842 The (2+n4)-valent aromatic group and the (2)n4)-valent aromatic compound composed of a carbon atom and a group of atoms selected from the group consisting of a nitrogen atom and a nitrogen atom are preferably 1 (2+n4). The valence aromatic group may, for example, be condensed from: condensed ring, broad (p-)', Γ, 夫: 广-_, etc., condensed by a single (〇=〇le) ring and a fluorene ring More than two valence groups in a polycyclic group; a square ring of (2+η4) rpfh彳 selected from the group; f?:r:n4) hydrogen atoms, with a single bond, a vinyl group or an extended acetylene group The second base of the base 4: Ϊ knot:: the aromatic ring is collected, removed (the two ring-condensed polycyclic aromatic rings adjacent to the peak ring set or the bridged, extended ethyl and recorded bivalent valence groups of the aromatic bridge Etc. Fangxiang ring, remove (2+η4) hydrogen atoms (2+η4)

式芳香環’例如可列舉以下的〇 0 0 0 'The aromatic ring of the formula ’ exemplifies the following 〇 0 0 0 '

為縮&夕環式芳香環，例如可列舉以下的環 323545 74 201228842 cbcoo〇ccoa：x^ lfi iz 1& 议 2ftFor the condensed & oxime-type aromatic ring, for example, the following ring can be cited 323545 74 201228842 cbcoo〇ccoa:x^ lfi iz 1& 2ft

ZI U 21 21 21 OD CCO cg3ZI U 21 21 21 OD CCO cg3

2ft 21 作為芳香環集合，例如可列舉以下的環。2 ft 21 As the aromatic ring collection, for example, the following rings are exemplified.

32 21 Η 32. Μ 作為有橋多環式芳香環，例如可列舉以下的環。 75 323545 20122884232 21 Η 32. Μ As the bridged polycyclic aromatic ring, for example, the following rings are exemplified. 75 323545 201228842

作為（2+n4)價的芳香族基，從原料單體的合成容易度之觀點’較理想為從式1至14、26至29、37至39或41 所示的環，除去（2+n4)個氫原子之基，更理想為從式i至 6、8、13、26、27、37或41所示的環，除去（2+n4)個氫原子之基’更加理想為從式卜37或41所示的環，除去（2+n4) 個氫原子之基。式（14)中，作為R2所示的（1+ml+m2)價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁基、第2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至20之燒基，除去（ml+m2)個氫原子之基；從選自苯基、卜萘基、2_萘基、 1-蒽基、2-蒽基、9-蒽基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至30之芳香基’除去（ml+m2)個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烧氧基、 323545 76 201228842 環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少 1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去（ml+m2)個氫原子之基；從具有包含碳原子之取代基的胺基，除去（ml+m2)個氫原子之基；以及，從具有包含碳原子之取代基的矽基，除去個氫原子之基。作為R2所示的（1+ml+m2)價有機基，從原料單體的合成容易度之觀點，較理想為從烷基除去個氫原子之基、從芳香基除去（ml+m2)個氫原子之基及從燒氧基除去（ml+m2)個氫原子之基。作為前述取代基，可列舉關於前述以的說明中舉例之取代基等。取代基存在複數個之情況，該些可為相同，亦可為相異。 •式（15)所不的構造單元式（15)中，R3表示具有式（16)所示的基之丨價基，Ar2 φ 表示具有或無R3以外的取代基之（2+n5)價芳香族基，n5表不1以上的整數。式（16)所示的基，可直接鍵結於Ar2，或隔著選自伸曱基、伸乙基、伸丙基、伸丁基、伸戊基、伸己基、伸壬基、伸十二烷基、伸環丙基、伸環丁基、伸環戊基、伸環己基、伸％壬基、伸環十二院基、伸降冰片基、伸金剛烷基（adamantylene)及該些基的至.少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至5〇之伸烷基；選自氧伸甲基、氧伸乙基、氧伸丙基、氧伸丁基、 323545 77 201228842 氧伸戊基、氧伸己基、氧伸壬基、氧伸十二烧基、伸環汚氧基、伸環丁氧基、伸環戊氧基、伸環己氧基、伸環^ 基、伸壞十一烧氧基、伸降冰片氧基、伸金剛燒氧基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之氧伸絲；具有或無取代基之亞胺基；具有或無取代基之伸石夕基；具有或無取代基之伸乙稀基（ethenylene);伸乙炔基；具有或無取代基之甲燒三基；以及，氧原子、氮原子、硫原子等雜原子，與Ar2結合^ Ar2可具有R3以外的取代基。作為該取代基，可列舉關於前述Q1的說明中舉例之取代基。取代基存在複數個之情況，該些可為相同，亦可為相異。月作為Ar2具有之R3以外的取代基，從原料單體的合成容易度之觀點，較理想為烷基、烷氧基、芳香基、芳香氧基、羧基及取代羧基。式（15)中’ n5表示1以上的整數。沾較理想為1至4 φ 的整數，更理想為1至3的整數。式（15)中Ar2所示的（2+n5)價芳香族基，可列舉（2+n5) "U务香私烴基及（2+n5)價芳香族雜環基，以只有碳原子所構成的（2+n5)價芳香族基及碳原子與選自氫原子、氮原子及氧原子所成群的1個以上的原子所構成之（2+n5)價芳香族基較理想。作為該（2+n5)價芳香族基，例如可列舉從笨王展、吡啶環、1，2-二嗪（diazine)環、1，3-二嗪環、1，4__ 二嗪環、1，3’5-三嗪環、呋喃環、吡咯環、n比唑環 (Pyrazole)、咪唑環、噁唑（oxaz〇le)環及噁二唑 323545 78 201228842 (oxadiazole)環等單環式芳香環，除去（2+n5)個氫原子之 (2+n5)價基；從選自該單環式芳香環所成群中2個以上的環縮合之縮合多環式芳香環，除去（2+n5)個氫原子之（2+n5) 價基；從選自該單環式芳香環及該縮合多環式芳香環所成群中2個以上的方香Ϊ衣’以单鍵、伸乙烯基或伸乙炔基（ethynylene)連結所成的芳香環集合，除去 (2+n5)個氫原子之（2+n5)價基；以及，從該縮合多環式芳香％•或5亥方香壞集合相鄰的2個芳香環以伸曱基、伸乙基 9 及幾基等2價基橋接的有橋多環式芳香環，除去（2+n5)個氫原子之（2+n5)價基。作為單環式芳香環’例如可列舉關於式（13)所示的構造單元之說明中舉例的式1至12所示的環。作為縮合多環式芳香環，例如可列舉關於式（1 3 )所示的構造單元之說明中舉例的式13至27所示的環。作為芳香環集合，例如可列舉關於式（13)所示的構造單元之說明中舉例的式28至36所示的環。 _ 作為有橋多環式芳香環，例如可列舉關於式（13)所示的構造單元之說明中舉例的式37至44所示的環。作為（2+n5)價的芳香族基，從原料單體的合成容易度之觀點’較理想為從式1至14、26至29、37至39或41 戶斤示的環，除去（2+n5)個氫原于之基，更理想為從式1至 6、8、13、26、27、37或41所示的環，除去（2+n5)個氫原子之基’更加理想為從式卜37或41所示的環，除去（2+n5) 個氫原子之基。 323545 79 201228842 式（16)中，m3及m4表示分別獨立的i以上的整數。式（16)中，作為R所示之（l+m3+m4)價有機基，例如可列舉從選自甲基、乙基、丙基、異丙基、丁基、異丁基、第2丁基、第3丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數丨至2〇之烷基，除去（m3+m4)個氫原子之基；從選自笨基、卜萘基、2_萘基、 1_蒽基、2_蒽基、9-蒽基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至3〇的芳香基，除去（m3+m4)個氫原子之基；從選自曱氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、裱十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少 1個氩原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烧氧基，除去（m3+m4)個氫原子之基；從包 ^ 3碳原子之具有取代基的胺基，除去（m3+m4)個氫原子之基；以及，從包含碳原子之具有取代基的矽基，除去（m3+m4) 個氫原子之基。作為R4所示之（l+m3+m4)價有機基，從原料單體的合成容易度之觀點，較理想為從烷基除*(m3+m4) 個氫原子之基、從芳香基除去（m3+m4)個氫原子之基及從烷氧基除去（m3+m4)個氫原子之基。作為前述取代基，可列舉關於前述Ql的說明中舉例之取代基等。取代基存在複數個之情況，該些可為相同，亦可為相異。 80 323545 201228842 •式（17)所示的構造單元式（17)中，R5表示具有式（18)所示的基之1價基，R6 表不具有式（19)所不的基之1價基，Aj·3表示具有或無R5 及R6以外的取代基之（2+n6+n7)價芳香族基，n6及π7表示分別獨立之1以上的整數。式（18)所示的基以及式（19)所示的基，可直接結合於 Ar3 ’或隔著選自伸曱基、伸乙基、伸丙基、伸丁基、伸戊基、伸己基、伸壬基、伸十二烧基、伸環丙基、伸環丁基、 ® 伸環戊基、伸環己基、伸環壬基、伸環十二烷基、伸降冰片基（norbornylene)、伸金剛烷基（adamantylene)及該些基的至少1個氩原子被取代基取代之基等的具有或無取代基之碳原子數1至50之伸烷基；選自氧伸曱基、氧伸乙基、氧伸丙基、氧伸丁基、氧伸戊基、氧伸己基、氧伸壬基、氧伸十二烷基、伸環丙氧基、伸環丁氧基、伸環戊氧基、伸環己氧基、伸環壬氧基、伸環十二烷氧基、伸降冰片氧 φ 基、伸金剛烷氧基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至5〇之氧伸烷基；具有或無取代基之亞胺基；具有或無取代基之伸矽基；具有或無取代基之伸乙烯基（ethenylene);伸乙炔基；具有或無取代基之曱烧二基，以及’氧原子、氣原子、硫原子等雜原子，與Ar3結合。The (2+n4)-valent aromatic group is preferably removed from the ring represented by Formulas 1 to 14, 26 to 29, 37 to 39 or 41 from the viewpoint of easiness of synthesis of the raw material monomers. N4) a group of hydrogen atoms, more preferably a ring represented by formula i to 6, 8, 13, 26, 27, 37 or 41, and a radical of (2+n4) hydrogen atoms is removed. The ring represented by 37 or 41 removes the radical of (2+n4) hydrogen atoms. In the formula (14), the (1+ml+m2)-valent organic group represented by R2 may, for example, be selected from the group consisting of an anthracenyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a second embodiment. Butyl, butyl, pentyl, hexyl, cyclohexyl, heptyl, octyl, decyl, decyl, lauryl, and the An unsubstituted group having from 1 to 20 carbon atoms, excluding (ml + m 2 ) hydrogen atom groups; from a phenyl group, a naphthyl group, a 2-naphthyl group, a 1-fluorenyl group, a 2-fluorenyl group, and 9 - an alkyl group having 6 to 30 carbon atoms having or having no substituent, such as a fluorenyl group and a group having at least one hydrogen atom substituted by a substituent, is removed (ml + m 2 ) of a hydrogen atom; Selected from methoxy, ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, 323545 76 201228842 cyclopropoxy, cyclobutoxy, ring a pentyloxy group, a cyclohexyloxy group, a cyclodecyloxy group, a cyclododecyloxy group, a norbornyloxy group, an adamantyloxy group, or a group in which at least one hydrogen atom of the group is substituted with a substituent or the like Unsubstituted carbon atom Alkoxy group of 1 to 50, which removes (ml + m 2 ) hydrogen atom groups; removes (ml + m 2 ) hydrogen atoms from an amine group having a substituent containing a carbon atom; and, has carbon The sulfhydryl group of the substituent of the atom removes the group of a hydrogen atom. The (1+ml+m2) valent organic group represented by R2 is preferably a group in which one hydrogen atom is removed from the alkyl group and is removed from the aryl group (ml+m2) from the viewpoint of easiness of synthesis of the raw material monomer. A group of a hydrogen atom and a group of (ml + m 2 ) hydrogen atoms removed from the alkoxy group. Examples of the substituent include a substituent exemplified in the above description. Where there are a plurality of substituents, the ones may be the same or different. In the structural unit formula (15) which is not represented by the formula (15), R3 represents a valence group having a group represented by the formula (16), and Ar2 φ represents a (2+n5) valence having a substituent other than R3. The aromatic group, n5 represents an integer of 1 or more. The group represented by the formula (16) may be directly bonded to Ar2, or may be selected from the group consisting of an extensor group, an exoethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a hydrazine group, and a decene group. Dialkyl, cyclopropyl, cyclobutene, cyclopentyl, cyclohexyl, fluorene, fluorene, borneon, adamantylene, and An alkyl group having from 1 to 5 carbon atoms with or without a substituent substituted by a substituent, such as an oxygen-extension methyl group, an oxygen-extended ethyl group, and an oxygen-extended group. Base, oxybutylene, 323545 77 201228842 Oxygen-extension pentyl group, oxygen-extension hexyl group, oxygen-extension sulfhydryl group, oxygen-extension decyl group, ring-exposed oxy group, cyclobutoxy group, cyclopentyloxy group, extens a cyclohexyloxy group, a stretching ring group, an extended eleven alkoxy group, an extended borneoloxy group, an exo-adamantyloxy group, and a group in which at least one hydrogen atom of the group is substituted with a substituent, etc. An oxygen-extension of a substituent having from 1 to 50 carbon atoms; an imine group having or without a substituent; a streptylene group having or without a substituent; an ethenylene having or without a substituent; B An alkynyl group; a methyl group having or without a substituent; and a hetero atom such as an oxygen atom, a nitrogen atom or a sulfur atom, which may be bonded to Ar2 and may have a substituent other than R3. As the substituent, a substituent exemplified in the description of the above Q1 can be mentioned. There are a plurality of substituents, which may be the same or different. The substituent other than R3 which is contained in Ar2 is preferably an alkyl group, an alkoxy group, an aryl group, an aromatic oxy group, a carboxyl group or a substituted carboxyl group from the viewpoint of easiness of synthesis of a raw material monomer. In the formula (15), 'n5 represents an integer of 1 or more. The dip is preferably an integer of 1 to 4 φ, more preferably an integer of 1 to 3. The (2+n5)-valent aromatic group represented by Ar2 in the formula (15) includes (2+n5) "U scented aromatic hydrocarbon group and (2+n5) valent aromatic heterocyclic group to have only a carbon atom The (2+n5)-valent aromatic group and the (2+n5)-valent aromatic group composed of one or more atoms selected from the group consisting of a hydrogen atom, a nitrogen atom and an oxygen atom are preferable. Examples of the (2+n5)-valent aromatic group include a pyridine ring, a pyridine ring, a 1,2-diazine ring, a 1,3-diazine ring, and a 1,4-diazine ring. , 3'5-triazine ring, furan ring, pyrrole ring, n-pyrazole ring (Pyrazole), imidazole ring, oxazole ring and oxadiazole 323545 78 201228842 (oxadiazole) ring monocyclic aromatic a (2+n5) valence group of (2+n5) hydrogen atoms; a condensed polycyclic aromatic ring condensed by two or more rings selected from the group consisting of the monocyclic aromatic ring, (2) +n5) a (2+n5) valence group of a hydrogen atom; a single bond, a stretch of two or more squares selected from the group consisting of the monocyclic aromatic ring and the condensed polycyclic aromatic ring a group of aromatic rings formed by linking ethylene or ethynylene to remove (2+n5) valence groups of (2+n5) hydrogen atoms; and, from the condensed polycyclic aromatic %• or 5 haifang The two adjacent aromatic rings of the fragrant group are bridged polycyclic aromatic rings bridged by a divalent group such as an extended thiol group, an extended ethyl group 9 and a few groups, and (2+n5) hydrogen atoms are removed (2+n5). ) Price base. As the monocyclic aromatic ring, for example, the ring represented by the formulae 1 to 12 exemplified in the description of the structural unit represented by the formula (13) can be cited. The condensed polycyclic aromatic ring may, for example, be a ring represented by the formulae 13 to 27 exemplified in the description of the structural unit represented by the formula (13). As the aromatic ring set, for example, the ring represented by the formulas 28 to 36 exemplified in the description of the structural unit represented by the formula (13) can be cited. _ As the bridged polycyclic aromatic ring, for example, the ring represented by the formulas 37 to 44 exemplified in the description of the structural unit represented by the formula (13) can be cited. The (2+n5)-valent aromatic group is preferably a ring represented by Formula 1 to 14, 26 to 29, 37 to 39 +n5) a group of hydrogen atoms, more preferably a ring represented by formula 1 to 6, 8, 13, 26, 27, 37 or 41, and a radical of (2+n5) hydrogen atoms is more desirable From the ring represented by Formula 37 or 41, the group of (2+n5) hydrogen atoms is removed. 323545 79 201228842 In the formula (16), m3 and m4 represent independent integers of i or more. In the formula (16), the (l+m3+m4)-valent organic group represented by R may, for example, be selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, and second. Butyl, butyl, pentyl, hexyl, cyclohexyl, heptyl, octyl, decyl, decyl, lauryl, and the An unsubstituted alkyl group having a carbon number of 2 to 2, a group of (m3+m4) hydrogen atoms removed; selected from a group consisting of a stupid group, a naphthyl group, a 2-naphthyl group, a 1 fluorenyl group, a 2 fluorenyl group, 9-fluorenyl group and an aromatic group having 6 to 3 Å of a carbon atom having or without a substituent, wherein at least one hydrogen atom of the group is substituted with a substituent, and the base of (m3+m4) hydrogen atoms is removed. From selected from the group consisting of decyloxy, ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, cyclopropoxy, cyclobutoxy, cyclopentyl An oxy group, a cyclohexyloxy group, a cyclodecyloxy group, a fluorenyldodecyloxy group, a norbornyloxy group, an adamantyloxy group, and a group in which at least one argon atom of the groups is substituted with a substituent, etc. Substituent carbon number 1 to 50 a group of (m3+m4) hydrogen atoms; a group of (m3+m4) hydrogen atoms removed from an amine group having a substituent of a carbon atom; and a substituent having a carbon atom A sulfhydryl group that removes (m3+m4) hydrogen atoms. As the (l+m3+m4) valent organic group represented by R4, from the viewpoint of easiness of synthesis of a raw material monomer, it is preferred to remove a radical from the alkyl group by removing *(m3+m4) hydrogen atoms from the alkyl group. (m3+m4) a group of hydrogen atoms and a group of (m3+m4) hydrogen atoms removed from the alkoxy group. Examples of the substituent include a substituent exemplified in the description of the above Q1. Where there are a plurality of substituents, the ones may be the same or different. 80 323545 201228842 • In the structural unit formula (17) represented by the formula (17), R5 represents a monovalent group having a group represented by the formula (18), and R6 represents a monovalent group having no group of the formula (19). The group Aj·3 represents a (2+n6+n7)valent aromatic group having or not a substituent other than R5 and R6, and n6 and π7 each represent an integer of 1 or more. The group represented by the formula (18) and the group represented by the formula (19) may be directly bonded to Ar3' or may be selected from the group consisting of an extensor group, an exoethyl group, a propyl group, a butyl group, a pentyl group and a stretching group. Hexyl, hydrazine, fluorene, propyl, butyl, Cyclopentyl, Cyclohexyl, Cyclodecyl, Cyclodecyl, Norbornylene And an alkyl group having 1 to 50 carbon atoms having or having no substituent, wherein at least one argon atom of the group is substituted with a substituent; , oxygen-extended ethyl, oxypropyl propyl, oxybutylene, oxopentyl, oxyhexyl, oxo, oxetane, cyclopropoxy, cyclobutoxy, extens Cyclopentyloxy, cyclohexyloxy, cyclohexyloxy, cyclopentadecanyloxy, borneolyloxy, adamantyloxy, and at least one hydrogen atom of the substituents are substituted An alkylene group having 1 to 5 carbon atoms with or without a substituent, such as a substituted alkyl group; an imido group having or without a substituent; a mercapto group having or without a substituent; having or not having a substituent Extending vinyl (ethenylene); extending ethynyl; Yue unsubstituted or having the burned-diyl group, and "an oxygen atom, a gas atom, a sulfur atom and other hetero atoms, in combination with Ar3.

Ar3可具有R5及R6以外的取代基。作為該取代基，可列舉關於前述Q1的說明中舉例之取代基。取代基存在複數個之情況’該些可為相同，亦可為相異。 323545 81 201228842 作為Ar3具有之R5及R6以外的取代基，從原料單體的合成容易度之觀點，較理想為烷基、烷氧基、芳香美、芳香氧基、羧基及取代羧基。土方式（17)中’ n6表示1以上的整數。肋較理想為1至4 的整數，更理想為1至3的整數。式（17)中，n7表示1以上的整數。n7較理想為1至4 的整數，更理想為1至3的整數。式（17)中’作為Ar3所示的（2+n6+n7)價芳香族基，可列舉（2+n6+n7)價的芳香族烴基及（2+n6+n7)價的芳香族雜環基，以只有碳原子所構成的（2+n6+n7)價芳香族基或碳原子與選自氫原子、氮原子及氧原子所成群的丨個以上的原子所構成之（2+n6+n7)價芳香族基較理想。作為該（2+n6+n7^ 價芳香族基，例如可列舉從苯環、吡啶環、丨，2_二嗪 (diazine)環、1，3-二唤環、1，4-二嗓環、咬。南環、啦略環、吡唑環（pyrazo 1 e)、咪唑環及噁唑（oxazo 1 e )環等單環式芳鲁香環，除去（2+n6+n7)個氫原子之（2+n6+n7)價基；從選自該單環式芳香環所成群中2個以上的環縮合之縮合多環式芳香環，除去（2+n6+n7)個氫原子之（2+n6+n7)價基；從選自該單環式芳香環及該縮合多環式芳香環所成群中2個以上的芳香環，以單鍵、伸乙烯基或伸乙炔基連結所成的芳香環集合，除去（2+n6+n7)個氫原子之（2+n6+n7)價基；以及’從該縮合多環式芳香環或該芳香環集合相鄰的2個芳香環以伸曱基、伸乙基及羰基等2價基橋接之有橋多環式芳香環’除去（2+η6+η7)個氫原子之（2+η6+η7)價基。 82 323545 201228842 作為單環式芳香環，例如可列舉關於式（13)所示的構造單疋之說明中舉例的式1至5、式7至10所示的環。作為縮合多環式芳香環，例如可列舉關於式（13)所乔的構造單元之說明中舉例的式13至27所示的環。作為芳香環集合’例如可列舉關於式（13)所示的構造單元之說明中舉例的式28至36所示的環。作為有橋多環式芳香環，例如可列舉關於式（13)所示的構造單元之說明中舉例的式37至44所示的環。作為（2+n6+n7)價的芳香族基，從原料單體的合成容易度之觀點，較理想為從式1至5、7至10、13、14、26至 29、37至39或41所示的環，除去（2+n6+n7)個氫原子之基，更理想為從式1、37或41所示的環，除去（2+n6+n7) 個虱原子之基’更加理想為從式1、38或42所示的環，除去（2+n6+n7)個氫原子之（2+n6+n7)價基。式（18)中，R7表示單鍵或（i+m5)價有機基，較理想為 φ (l+m5)價有機基。式（18)中，作為R7所示之（i+m5)價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁基、第 2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至20之烷基，除去m5個氫原子之基；從選自苯基、1-萘基、2-萘基、1-蒽基、2-蒽基、9-蒽基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至30的芳香 83 323545 201228842 基，除去m5個氫原子之基；從選自曱氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、= 十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少i 個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去m5個氫原子之基；從包含碳原子之具有取代基的胺基’除去m5個氫原子之基；以及，從包含碳原子之具有取代基的石夕基，除去m5個氫原子之武。作為R7所示之（l+m5)價有機基，從原料單體的合成容易度之觀點，較理想為從烷基除去m5個氫原子之基、從芳香二除去m5個氫原子之基及從烷氧基除去祁個氫原子之基广作為前述取代基，可列舉關於前述Q1的說明中舉例之取代基等。取代基存在複數個之情況，該些可為相同，亦可為相異。式（18)中，m5表示1以上的整數。但R7為單鍵時的表示1。式（19)中，R8表示單鍵或（i+m6)價有機基，較理想為 (1+ΙΠ6)價有機基。式（19)中，作為R8所示之（i+m6)價有機基，例如可列舉從選自甲基、乙基、丙基、異丙基、丁基、異丁基、第 2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至20之烷基，除去m6個氫原子之基；從選自苯基、卜萘基、2_萘基、卜 323545 84 201228842 蒽基、2-蒽基、9-蒽基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至3〇的芳香基，除去m6個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二燒氧基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少i 個氫原子被取代基取代之基等的具有或無取代基之碳原子 φ 數1至50之烷氧基，除去m6個氫原子之基；從包含碳原子之具有取代基的胺基，除去m6個氫原子之基；以及從包含碳原子之具有取代基的矽基，除去咄個氫原子之基。作為R8所示之（l+m6)價有機基，從原料單體的合成容易度之觀點，較理想為從烷基除去m6個氫原子之基、從芳香基除去祕個氫原子之基及從烷氧基除去祕個氫原子之基。作為前述取代基，可列舉關於前述Q1的說明中舉例之取代基。取代基存在複數個之情況，該些可為相同，亦可為相異。式（19)中’ ra6表示1以上的整數。但R8為單鍵時m6 表示1。 •式（20)所示的構造單元式（20)中’ R表示具有式（21)所示的基之1價基，Ri〇表示具有式（22)所示的基之1價基，Ar4表示具有或無R9 及R1。以外的取代基之（2+n8+n9)價芳香族基，·η8及n9表示分別獨立之1以上的整數。式（21)所示的基以及式（22)所示的基，可直接結合於 323545 85 201228842Ar3 may have a substituent other than R5 and R6. As the substituent, a substituent exemplified in the description of the above Q1 can be mentioned. There are a plurality of substituents in the case of 'these may be the same or different. 323545 81 201228842 The substituent other than R5 and R6 which is contained in Ar3 is preferably an alkyl group, an alkoxy group, an aromatic group, an aromatic aryl group, a carboxyl group or a substituted carboxyl group from the viewpoint of easiness of synthesis of a raw material monomer. In the formula (17), 'n6 represents an integer of 1 or more. The ribs are desirably an integer of 1 to 4, more preferably an integer of 1 to 3. In the formula (17), n7 represents an integer of 1 or more. N7 is preferably an integer of 1 to 4, more preferably an integer of 1 to 3. In the formula (17), the (2+n6+n7)-valent aromatic group represented by Ar3 may, for example, be a (2+n6+n7)-valent aromatic hydrocarbon group or a (2+n6+n7)-valent aromatic hetero a cyclic group consisting of a (2+n6+n7) valent aromatic group or a carbon atom composed only of carbon atoms and more than one atom selected from the group consisting of a hydrogen atom, a nitrogen atom and an oxygen atom (2+) The n6+n7) valence aromatic group is ideal. Examples of the (2+n6+n7^valent aromatic group) include a benzene ring, a pyridine ring, an anthracene, a 2-diazine ring, a 1,3-second ring, and a 1,4-dioxane ring. a single-ring aromatic scented ring of the south ring, the Raleigh ring, the pyrazoline (pyrazo 1 e), the imidazole ring, and the oxazo 1 e ring, and removes (2+n6+n7) hydrogen atoms. (2+n6+n7) valent group; condensed polycyclic aromatic ring condensed by two or more rings selected from the group consisting of the monocyclic aromatic ring, (2+n6+n7) hydrogen atoms are removed ((2+n6+n7)) a 2+n6+n7) valent group; two or more aromatic rings selected from the group consisting of the monocyclic aromatic ring and the condensed polycyclic aromatic ring, which are bonded by a single bond, a vinyl group or an ethynyl group. a set of aromatic rings, removing (2+n6+n7) valence groups of (2+n6+n7) hydrogen atoms; and 'from the condensed polycyclic aromatic ring or two aromatic rings adjacent to the aromatic ring set The (2+η6+η7) valence group of (2+η6+η7) hydrogen atoms is removed by a bridged polycyclic aromatic ring bridged by a divalent group such as an extended thiol group, an ethyl group and a carbonyl group. 82 323545 201228842 The monocyclic aromatic ring may, for example, be a structure represented by the formula (13). The ring represented by Formulas 1 to 5 and Formulas 7 to 10 exemplified in the description of the oxime. As the condensed polycyclic aromatic ring, for example, Formulas 13 to 27 exemplified in the description of the structural unit of the formula (13) can be cited. The ring shown in the following. For example, the ring represented by the formulas 28 to 36 exemplified in the description of the structural unit represented by the formula (13) can be cited. As the bridged polycyclic aromatic ring, for example, The ring represented by the formulae 37 to 44 exemplified in the description of the structural unit represented by the formula (13). As the (2+n6+n7)-valent aromatic group, it is preferable from the viewpoint of easiness of synthesis of the raw material monomer. For the ring represented by Formulas 1 to 5, 7 to 10, 13, 14, 26 to 29, 37 to 39 or 41, the group of (2+n6+n7) hydrogen atoms is removed, more preferably from Formula 1. The ring represented by 37 or 41 removes (2+n6+n7) groups of ruthenium atoms. It is more desirable to remove (2+n6+n7) hydrogen atoms from the ring represented by Formula 1, 38 or 42 ( 2+n6+n7) valent group. In the formula (18), R7 represents a single bond or an (i+m5) valence organic group, and is preferably a φ (l+m5) valent organic group. In the formula (18), as R7 The (i+m5) valence organic group shown, for example, From selected from decyl, ethyl, propyl, isopropyl, butyl, isobutyl, butyl, butyl, pentyl, hexyl, cyclohexyl, heptyl, octyl, decyl a fluorenyl group, a lauryl group, and an alkyl group having 1 to 20 carbon atoms with or without a substituent, wherein at least one hydrogen atom of the group is substituted with a substituent, and a group of m5 hydrogen atoms is removed; With or without substitution of a phenyl group, a 1-naphthyl group, a 2-naphthyl group, a 1-fluorenyl group, a 2-fluorenyl group, a 9-fluorenyl group, and a group in which at least one hydrogen atom of the group is substituted with a substituent a group having a carbon number of 6 to 30, 83 323545 201228842, a group of m5 hydrogen atoms removed; selected from the group consisting of a decyloxy group, an ethoxy group, a propoxy group, a butoxy group, a pentyloxy group, a hexyloxy group, Alkoxy, dodecyloxy, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclodecyloxy, =dodecyloxy, norbornyloxy, adamantyloxy And an alkoxy group having 1 to 50 carbon atoms having or without a substituent, wherein the at least one hydrogen atom of the group is substituted with a substituent, the group of m5 hydrogen atoms is removed; Substituent Amine 'm5 removing one hydrogen atom of the group; and, from the group consisting of carbon atoms having a substituent Xi stone, Wu m5 removal of one hydrogen atom. The (l+m5)-valent organic group represented by R7 is preferably a group from which m5 hydrogen atoms are removed from the alkyl group, and m5 hydrogen atoms are removed from the aromatic group from the viewpoint of easiness of synthesis of the raw material monomer. The group in which the hydrogen atom is removed from the alkoxy group is widely used as the substituent, and examples of the substituents exemplified in the description of the above Q1 include the above. Where there are a plurality of substituents, the ones may be the same or different. In the formula (18), m5 represents an integer of 1 or more. However, when R7 is a single bond, it means 1. In the formula (19), R8 represents a single bond or an (i+m6) valent organic group, and more preferably a (1+ΙΠ6) valent organic group. In the formula (19), the (i+m6)-valent organic group represented by R8 may, for example, be selected from the group consisting of a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a second butyl group. And a butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a decyl group, a fluorenyl group, a lauryl group, and the like having or substituted with at least one hydrogen atom of the group substituted by a substituent. a group having 1 to 20 carbon atoms and a group of m6 hydrogen atoms; selected from the group consisting of phenyl, naphthyl, 2-naphthyl, 323545 84 201228842 fluorenyl, 2-mercapto, 9-fluorenyl and An aromatic group having 6 to 3 carbon atoms having or having no substituent, wherein at least one hydrogen atom of the group is substituted with a substituent, the group of m6 hydrogen atoms is removed; and is selected from the group consisting of methoxy and B. Oxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclo a carbon atom φ number 1 to or without a substituent, such as a decyloxy group, a cyclododecyloxy group, a norbornyloxy group, an adamantyloxy group, or a group in which at least one hydrogen atom of the group is substituted with a substituent 50 Alkoxy group, a group of m6 hydrogen atoms removed; a group of m6 hydrogen atoms removed from an amine group having a substituent of a carbon atom; and a hydrogen atom removed from a thiol group having a substituent having a carbon atom The basis. The (l+m6)-valent organic group represented by R8 is preferably a group from which m6 hydrogen atoms are removed from an alkyl group, and a radical of a hydrogen atom is removed from an aromatic group, from the viewpoint of easiness of synthesis of a raw material monomer. The radical of the hydrogen atom is removed from the alkoxy group. As the substituent, a substituent exemplified in the description of the above Q1 can be mentioned. Where there are a plurality of substituents, the ones may be the same or different. In the formula (19), ' ra6 represents an integer of 1 or more. However, when R8 is a single bond, m6 represents 1. In the structural unit formula (20) represented by the formula (20), 'R represents a monovalent group having a group represented by the formula (21), and Ri 〇 represents a monovalent group having a group represented by the formula (22), Ar4 Indicates with or without R9 and R1. The (2+n8+n9) valent aromatic group of the substituent other than the substituent, η8 and n9 represent an integer of 1 or more independently. The group represented by the formula (21) and the group represented by the formula (22) can be directly bonded to 323545 85 201228842

Ar4 ’或隔著選自伸曱基、伸乙基、伸丙基、伸丁基、伸戊基、伸己基、伸壬基、伸十二烷基、伸環丙基、伸環丁基、伸環戊基、伸環己基、伸環壬基、伸環十二烷基、伸降冰片基（norbornylene)、伸金剛烷基（adamantylene)及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之伸院基；選自氧伸曱基、氧伸乙基、氧伸丙基、氧伸丁基、氧伸戍基、氧伸己基、氧伸壬基、氧伸十二烧基、伸環丙氧基、伸環丁氧基、伸環戊氧基、伸環己氧基、伸環壬氧基、伸環十二烷氧基、伸降冰片氧基、伸金剛烷氧基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至之氧伸烧基；具有或無取代基之亞胺基；具有或無取代基之伸矽基；具有或無取代基之伸乙稀基（ethenylene);伸乙炔基；具有或無取代基之甲烷三基；以及，氧原子、氮原子、硫原子等雜原子，與Ar4結合。Ar4' or a device selected from the group consisting of an exogenous group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a decyl group, a dodecyl group, a cyclopropyl group, a cyclobutyl group, Cyclopentyl, cyclohexyl, fluorenyl, fluorenyl dodecyl, norbornylene, adamantylene, and at least one hydrogen atom of the group are replaced by a substituent a base group having 1 to 50 carbon atoms with or without a substituent; or an exudate group selected from the group consisting of an oxygen-extension group, an oxygen-extension group, an oxygen-extension group, an oxygen-terminated butyl group, an oxygen-extension group, and an oxygen extension group. Hexyl, oxyalkylene, oxo-12, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclohexyloxy, cyclododecanoxy a thioloxy group, an adamantyloxy group, and an oxygen-free alkyl group having 1 or less carbon atoms having or without a substituent, wherein at least one hydrogen atom of the group is substituted with a substituent; Unsubstituted imino group; exocyclic group with or without substituent; ethenylene with or without substituent; ethynyl group; methane triyl group with or without substituent And a hetero atom such as an oxygen atom, a nitrogen atom or a sulfur atom, which is bonded to Ar4.

Ar可具有R9及以外的取代基。作為該取代基可列舉關於前述Q1的說明中舉例之取代基。取代基存在複數個之情況，該些可為相同，亦可為相異。作為Ar4具有之R9及ri。以外的取代基，從原料單體的合成容易度之觀點，較理想為烷基、烷氧基、芳香基、芳香氧基、羧基及取代羧基。式（20)中，⑽表示1以上的整數。n8較理想為】至4 的整數，更理想為1至3的整數。式（20)中，n9表示1以上的整數。n9較理想為^至4 323545 86 201228842 的整數，更理想為1至3的整數。式（20)中’作為Ar4所示的（2+n8+n9)價芳香族基，例如（2+n8+n9)價的芳香族烴基及（2+n8+n9)價的芳香族雜環基，以只有碳原子所構成的（2+n8+n9)價芳香族基或碳原子與選自氫原子、氮原子及氧原子所成群的丨個以上的原子所構成之（2+η8+π9)價芳香族基較理想。作為該（2+n8+n9) 價芳香族基，例如從苯環、吡啶環、丨，2_二嗪（diazine) 環、1，3-二唤環、1’4-二嗪環"夫σ南環"比洛環、吼嗤環 (pyrazole)及味唾環等單環式芳香環，除去（2+η8+η9)個氫原子之（2+π8+π9)價基；從選自該單環式芳香環所成群中2 個以上的環m合多環式芳香環，除去（編+η9)個氮原子之（2+η8+η9)價基；從選自料環式㈣環及該縮合多環式芳香環所成群中2個以上的芳香環，以單鍵、伸乙烯基或伸乙絲賴醜料麵集合，除去⑵η·)個氮 f子之（2+η8+η9)價基；從_合多環式芳香環或該芳香環集合相鄰的2個芳香環以伸甲基、伸乙基及絲等2價基橋接之有橋多環式料環，除去（編+η9)個氫原子之 (2+η8+η9)價基。作為單環式芳香環，可列舉關於式（13)所示的構造單元之說明中舉例的式1至5、式UH)所科環。作為縮合多環式芳香環，可列舉關於式⑽所示的構造單元之說明中舉例的式13至27所示的環。作為芳香環集合，可列舉關於式（13)所示的構造單元之說明中舉例的式28至36所示的環。 323545 87 201228842 作為有橋多環式芳香環，可列舉關於式（丨3)所示的構造單元之說明中舉例的式37至44所示的環。作為（2+η 8+η 9 )價的芳香族基，從原料單體的合成容易度之觀點，較理想為從式1至5、7至10、13、14、26至 29、37至39或41所示的環，除去（2+η8+η9)個氳原子之基’更理想為從式1至6、8、14、27、28、38或42所示的裱，除去（2+η8+η9)個氫原子之基，更加理想為從式J、 37或41所示的環，除去（2+n8+n9)個氫原子之基。式（21)中，R11表示單鍵或（1+1117)價有機基，較理想為 (l+m7)價有機基。式（21)中，作為R11所示之（1+m7)價有機基，例如可列舉從選自甲基、乙基、丙基、異丙基、丁基、異丁基、第 2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數丨至2〇之烷基， Φ 除去m7個氫原子之基；從選自苯基、卜萘基、2-萘基、1-蒽基、2-蒽基、9-蒽基及該些基中至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至3〇的芳香基，除去m7個氫原子之基；從選自曱氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烧氧基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少i 個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去m7個氫原子之基；從包含碳原 323545 88 201228842 子之具有取代基的胺基，除去m7個氫原；+ 1 ·、丁巷' ’以及，從包含碳原子之具有取代基的石夕基’除去m?個氫原子之義。作為R"料之(偏）财機基，㈣料單㈣合成容易土产之觀點，較理想為從烧基除去m7個氫原子之基"^ 除去《17個氫原子之基及從烷氧基除去…個氫原子基作為前述取代基，可列舉關於前述Q1的說明令舉了狀取代基。取代基存在複數個之情況，心柯為相同為相異。表示^(21)中，W表示1以上的整數。但Rl、單鍵時W 式(22)中’ R、示單鍵或⑴⑹價有機 (l+m8)價有機基。早乂里心為式（22)中，作為γ所示之（1+m8) 舉從選自曱美A w 有機基’例如可列 2二第，二基、丙基、異丙基、丁基、異丁基、第壬/4 =、戊基、己基、環己基、庚基、辛基、取代之基等的具有或轉似^，原子被取代基除去祕個t Μ &原子數1至20之烷基， 8個氧原子之基;從選自苯基、玉、萘二代基及該些基的至少1個基，除去2 Λ 取代叙麵子數6錢的芳香作云m8個虱原子之基；從選自甲基、丁氧基、戊氣I ?I 氣基'乙氧基、丙氧丙氧基、環丁基'壬氧基、十二院氧基、環十二燒氧基、降:二:：己氧基、環壬氧基、環片軋基、金剛烷氧基及該些基的至少1 323545 89 201228842 個氫原子跡代絲奴基等㈣有絲取絲之碳原子數1至5G之絲基，除去m8個氫原子之基；從包含碳原子之具有取代基的胺基，除去ro8個氫原子之基；以及從包含碳原子之具有取代基㈣基，除去㈣個氫原子之基。作為R12射之（l+m8)财缝，從原料賴的合成容易度之觀點，較理想為從絲除Sm8個氫原子之基、從芳香基除去m8減料之基及魏氧祕去m8個氫原子之基。作為前述取代基，可列舉關於前述以的說明中舉例之取代基。取代基存在複數個之情況，該些可為相同’亦可為相異。式（22)中，m8表示1以上的整數。但ri2為單鍵時ιη8 表示1。 •式（13)所示的構造單元之例Ar may have a substituent other than R9. As the substituent, a substituent exemplified in the description of the above Q1 can be cited. Where there are a plurality of substituents, the ones may be the same or may be different. As Ar4 has R9 and ri. The substituent other than the substituent is preferably an alkyl group, an alkoxy group, an aromatic group, an aromatic oxy group, a carboxyl group or a substituted carboxyl group from the viewpoint of easiness of synthesis of the raw material monomer. In the formula (20), (10) represents an integer of 1 or more. N8 is preferably an integer of 4 to 4, more preferably an integer of 1 to 3. In the formula (20), n9 represents an integer of 1 or more. N9 is preferably an integer of ^ to 4 323545 86 201228842, more preferably an integer of 1 to 3. In the formula (20), '(2+n8+n9) valent aromatic group represented by Ar4, for example, (2+n8+n9) valent aromatic hydrocarbon group and (2+n8+n9) valent aromatic heterocyclic ring a group consisting of (2+n8+n9) valent aromatic groups or carbon atoms composed of only carbon atoms and more than one atom selected from the group consisting of hydrogen atoms, nitrogen atoms and oxygen atoms (2+η8) The +π9) valence aromatic group is ideal. As the (2+n8+n9) valent aromatic group, for example, from a benzene ring, a pyridine ring, an anthracene, a 2-diazine ring, a 1,3-second ring, and a 1'4-diazine ring" a single-ring aromatic ring such as a bilobon ring, a pyrazole ring, and a taste ring, removing (2+η8+η9) hydrogen atoms (2+π8+π9) valence groups; From the group of the monocyclic aromatic ring, two or more ring m-incorporated polycyclic aromatic rings are removed, and the (2+η8+η9) valence group of the nitrogen atom is removed; (4) Two or more aromatic rings in the group of the ring and the condensed polycyclic aromatic ring, which are separated by a single bond, a vinyl group or a hexagram, to remove (2) η·) a nitrogen f (2+) Η8+η9) valence group; bridged multi-ring ring bridged from a _heterocyclic aromatic ring or two adjacent aromatic rings of the aromatic ring with a divalent group such as methyl, ethyl and silk The (2+η8+η9) valence group of (hydrogenation + η9) hydrogen atoms is removed. The monocyclic aromatic ring may be exemplified by the formulae 1 to 5 and the formula UH) exemplified in the description of the structural unit represented by the formula (13). The condensed polycyclic aromatic ring may, for example, be a ring represented by the formulae 13 to 27 exemplified in the description of the structural unit represented by the formula (10). The aromatic ring assembly may be a ring represented by the formulas 28 to 36 exemplified in the description of the structural unit represented by the formula (13). 323545 87 201228842 As the bridged polycyclic aromatic ring, a ring represented by the formulas 37 to 44 exemplified in the description of the structural unit represented by the formula (丨3) can be cited. The aromatic group having a (2+η 8+η 9 ) valence is preferably from the formulae 1 to 5, 7 to 10, 13, 14, 26 to 29, 37 from the viewpoint of easiness of synthesis of the raw material monomers. The ring shown by 39 or 41 is removed from the group of (2+η8+η9) germanium atoms. More preferably, it is removed from the formula 1 to 6, 8, 14, 27, 28, 38 or 42. +η8+η9) A group of hydrogen atoms, more preferably a ring of (2+n8+n9) hydrogen atoms is removed from the ring represented by Formula J, 37 or 41. In the formula (21), R11 represents a single bond or a (1+1117)-valent organic group, and more preferably a (l+m7)-valent organic group. In the formula (21), the (1+m7)-valent organic group represented by R11 may, for example, be selected from the group consisting of a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a second butyl group. And a butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a lauryl group, and the like, wherein at least one hydrogen atom of the group is substituted with a substituent, or the like a group having a carbon number of 丨 to 2 烷基, Φ removing a group of m7 hydrogen atoms; and a group selected from the group consisting of phenyl, naphthyl, 2-naphthyl, 1-indenyl, 2-indenyl, 9-fluorenyl and An aromatic group having 6 to 3 carbon atoms having or without a substituent in which at least one hydrogen atom is substituted by a substituent, and a group having m7 hydrogen atoms removed from the group; Oxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclo a methoxy group, a cyclododecyloxy group, a norbornyloxy group, an adamantyloxy group, and a group having at least one hydrogen atom of the group substituted with a substituent, etc., having or having no substituent, having 1 to 50 carbon atoms Alkoxy group, To the base of m7 hydrogen atoms; remove m7 hydrogenogens from the amine group containing a substituent of carbonogen 323545 88 201228842; + 1 ·, Dingxiang ' ' and, from the stone containing a substituent of a carbon atom Xiji' removes the meaning of m? As the basis of the R" material, (4) material list (4) is easy to produce, it is preferable to remove the base of m7 hydrogen atoms from the burning group "^ Remove the "17 hydrogen atom base and the alkoxy The group in which the hydrogen atom group is removed as the substituent is exemplified by the description of the above Q1. There are a plurality of substituents, and the same is different for the same. In the case of ^(21), W represents an integer of 1 or more. However, when R1 or a single bond, W is in the formula (22), R is a single bond or (1) is a (6) organic (l+m8) organic group. In the early formula, (22), as shown by γ (1+m8), it is selected from the group consisting of 曱美 A w organic group, such as can be listed as 2nd, diyl, propyl, isopropyl, butyl. a group, an isobutyl group, a fluorene/4 =, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a substituted group, or the like having or converted to a ^, an atom is removed by a substituent, and the number of atoms is t & An alkyl group of 1 to 20, a group of 8 oxygen atoms; a condensed cloud m8 which is removed from at least one group selected from the group consisting of a phenyl group, a jade, a naphthalene disubstituted group, and a group of these groups. a base of a ruthenium atom; from a methyl group, a butoxy group, a pentane I?I gas group 'ethoxy group, a propoxy oxy group, a cyclobutyl 'decyloxy group, a twelfth oxy group, a ring ten Di-oxygenated, lower: two: hexyloxy, cyclodecyloxy, ring-rolled, adamantyloxy and at least 1 323545 89 201228842 hydrogen atom traces of silk slaves (four) filament Taking a silk group having 1 to 5 G carbon atoms, removing a group of m8 hydrogen atoms; removing a base of ro8 hydrogen atoms from an amine group having a substituent having a carbon atom; and having a substituent having a carbon atom (4) base, remove (four) The base of a hydrogen atom. As the R12 shot (l+m8) fiscal seam, from the viewpoint of the ease of synthesis of the raw material, it is preferable to remove the base of the S8 hydrogen atom from the filament, remove the base of the m8 from the aromatic group, and remove the m8. The base of a hydrogen atom. As the above substituent, a substituent exemplified in the above description may be mentioned. Where there are a plurality of substituents, the same may be the same 'may be different. In the formula (22), m8 represents an integer of 1 or more. However, when ri2 is a single bond, ιη8 represents 1. • Example of a structural unit represented by the formula (13)

作為式（13)所示的構造單元，從所得的離子性聚合物之電子傳輸性的觀點，較理想為式（23)所示的構造單元及式（24)所示的構造單元，更理想為式（24)所示的構造單元The structural unit represented by the formula (13) is more preferably a structural unit represented by the formula (23) and a structural unit represented by the formula (24) from the viewpoint of electron transport properties of the obtained ionic polymer. The structural unit shown in the formula (24)

^{(Q^na-Y3 1 (23) w、r1>vy_)-《z1)4 m1〇 (式（23)中，R13表示（l+m9+ml〇)價有機基，R14表斧1償# 機基。Q1、Q3、Y1、Μ1、Z1、Y3、nl、al、bl 及 n3 係如前述 1 Tj ' m9及mlO分別獨立表示1以上的整數。Q1、Q3、Y1、Μ、 Υ3、nl、al、bl及η3分別為複數個的情況，可為相同’ 201228842 可為相異。）式（23)中，作為R13所示之（l+m9+ml0)價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁基、第2丁基、第3丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至20之烷基，除去（m9+ml0)個氫原子之基；從選自苯基、1-萘基、2-萘基、1-蒽基、2-蒽基、9-蒽基及該些基的至少1個氫原子 ® 被取代基取代之基等的具有或無取代基之碳原子數6至30 的芳香基，除去（m9+ml0)個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去（m9+ml0)個氫原子 φ 之基；從包含碳原子之具有取代基的胺基，除去（m9+ml0) 個氫原子之基；以及，從包含碳原子之具有取代基的矽基，除去（m9+ml0)個氫原子之基。作為R13所示之（1+m9+mi〇)價有機基’從原料單體的合成容易度之觀點，較理想為從烧基除去（m9+ml0)個氫原子之基、從芳香基除去（m9+ml〇)個氫原子之基及從烷氧基除去（m9+ml〇)個氫原子之基。式（23)中’作為R14所示1價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁基、第2丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸 323545 91 201228842 基、月桂基及該些基的至少丨個氫原子被取代基取等的具有或無取代基之碳原子數U2〇之燒基，除去^ 氫原子之基，從選自笨基、卜餘、2_萘基、卜蒽基、2— 惠基、9-®、基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至30的芳香基，除去 1個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧基、環丙氧基、^{(Q^na-Y3 1 (23) w, r1> vy_)-"z1)4 m1〇 (in the formula (23), R13 represents (l+m9+ml〇) valence organic group, R14 table axe 1 Resolving # machine base. Q1, Q3, Y1, Μ1, Z1, Y3, nl, al, bl, and n3 are respectively integers of 1 or more as described above. T1, m3, and ml3 , nl, al, bl, and η3 are plural cases, respectively, and may be the same '201228842 may be different.) In the formula (23), as the (l+m9+ml0) valence organic group represented by R13, for example, Listed from thiol, ethyl, propyl, isopropyl, butyl, isobutyl, 2, butyl, butyl, pentyl, hexyl, cyclohexyl, heptyl, octyl, decyl And a fluorenyl group, a lauryl group, and an alkyl group having 1 to 20 carbon atoms having or having no substituent, wherein at least one hydrogen atom of the group is substituted with a substituent, and (m9+ml0) hydrogen atoms are removed. a group substituted with a substituent selected from the group consisting of a phenyl group, a 1-naphthyl group, a 2-naphthyl group, a 1-fluorenyl group, a 2-fluorenyl group, a 9-fluorenyl group, and at least one hydrogen atom of the groups. An aromatic group having 6 to 30 carbon atoms with or without a substituent, and removing a group of (m9+ml0) hydrogen atoms; From the group consisting of methoxy, ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, cyclopropoxy, cyclobutoxy, cyclopentyloxy a group, a cyclohexyloxy group, a cyclodecyloxy group, a cyclododecyloxy group, a norbornyloxy group, an adamantyloxy group, or a group substituted with at least one hydrogen atom of the group, or the like a group having from 1 to 50 carbon atoms, a group of (m9+ml0) hydrogen atoms φ; and a group of (m9+ml0) hydrogen atoms removed from an amine group having a substituent having a carbon atom; And, a group of (m9+ml0) hydrogen atoms is removed from a thiol group having a substituent of a carbon atom. The (1+m9+mi〇)valent organic group represented by R13 is preferably removed from the aromatic group by removing (m9+ml0) hydrogen atoms from the group, from the viewpoint of easiness of synthesis of the raw material monomer. (m9+ml〇) a group of hydrogen atoms and a group of (m9+ml〇) hydrogen atoms removed from the alkoxy group. In the formula (23), the monovalent organic group represented by R14 may, for example, be selected from the group consisting of an anthracenyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, and a third butyl group. , pentyl, hexyl, cyclohexyl, heptyl, octyl, decyl, oxime 323545 91 201228842 base, lauryl group and at least one hydrogen atom of the group are substituted with a substituent having a carbon atom with or without a substituent a plurality of U2 oxime groups, the base of the hydrogen atom is removed, and at least one hydrogen atom selected from the group consisting of a stupid group, a ruthenium, a 2-naphthyl group, a diterpene group, a 2-kee group, a 9-® group, and a group An aromatic group having 6 to 30 carbon atoms with or without a substituent substituted by a substituent or the like, excluding a group of one hydrogen atom; and selected from a methoxy group, an ethoxy group, a propoxy group, a butoxy group , pentyloxy, hexyloxy, decyloxy, dodecyloxy, cyclopropoxy,

裱丁氧基、環戊氧基、環己氧基、環壬氧基、環十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至5〇之烧氧基’除去1個氫原子之基；從包含碳原子之具有取代基的胺基’除去1個氫原子之基；以及，從包含碳原子之具有取代基的矽基’除去1個氫原子之基。作為R14所示 1價有機基，從原料單體的合成容易度之觀點，較理想為從烧基除去1個氫原子之基、從芳香基除去1個氫原子之基及從烷氧基除去1個氫原子之基。作為式（23)所示的構造單元，可列舉以下的構造單元。 92 323545 201228842Butyloxy, cyclopentyloxy, cyclohexyloxy, cyclodecyloxy, cyclododecyloxy, norbornyloxy, adamantyloxy and at least one hydrogen atom of these groups are substituted by a substituent An alkoxy group having 1 to 5 carbon atoms having or having no substituent, such as a group having one hydrogen atom removed; and a group having one hydrogen atom removed from an amine group having a substituent having a carbon atom; And, a group of one hydrogen atom is removed from a thiol group having a substituent of a carbon atom. The monovalent organic group represented by R14 is preferably a group which removes one hydrogen atom from a burnt group, a base which removes one hydrogen atom from an aromatic group, and is removed from an alkoxy group from the viewpoint of easiness of synthesis of a raw material monomer. A base of a hydrogen atom. The structural unit represented by the formula (23) includes the following structural units. 92 323545 201228842

Μ = Li, Na, K, Cs, N(CH3)4Μ = Li, Na, K, Cs, N(CH3)4

ocnyT (CH2CH2〇)2CH3 M = Li, Na. K. Cs, N(CH3)4ocnyT (CH2CH2〇)2CH3 M = Li, Na. K. Cs, N(CH3)4

M = h3co rvco〇M+ i(CH2CH2〇hCH3 Li, Na, K. Cs. N(CH3)4M = h3co rvco〇M+ i(CH2CH2〇hCH3 Li, Na, K. Cs. N(CH3)4

cooivr (CH2CH20}2CH3 M = Li, Na, K, Cs, N(CH3)4 M = Li, Na, K, Cs, N(CH3)4 93 323545 (24) 201228842Cooivr (CH2CH20}2CH3 M = Li, Na, K, Cs, N(CH3)4 M = Li, Na, K, Cs, N(CH3)4 93 323545 (24) 201228842

{(Z'Jbi (M1)a1 γΐ.(αι)η11 X i3^(Qi)n1-Yi(M1)a1(Z1)b1} m11卜桃E2 >)Π〆} m12 (式（24)中 ’ R13 表示（l+mll+ml2)價有機基。QUQ3、Y'M1、 Z1、γ3、nl、al、bl及n3係如前述。mil及ml2分別獨立表示 1 以上的整數。r丨3、mli、ml2、Q1、Q3、Y1、Μ1、Z1、 Υ3、nl、al、bl及η3分別為複數個的情況，可為相同，亦 _可為相異。）式（24)中，作為R13所示之（i+mii+mi2)價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁基、第2丁基、第3丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至2〇之烷基’除去（ml Hml2)個氫原子之基；從選自苯基、1-萘基、 φ 2-萘基、1-蒽基、2-蒽基、9_蒽基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數6 至30的芳香基’除去（mi1+ml2)個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去（mll+ml2) 個氫原子之基；從包含碳原子之具有取代基的胺基，除去 323545 94 201228842 ⑽遍2)個氫原子之基，·以及，從包含碳原子之具有取代基的石夕基’除去（mll+m12)個氫原子之基。作為Rl3所示之〇+mll+ml2)價有機基’從原料單體的合成容易度之觀點，較理想為從烧基除去（inll+ml2)個氫原子之基、從芳香基除去（mll+ml2)個氫原子之基及從烷氧基除去（mll+ml2)個氫原子之基。作為式（24)所示的構造單元，可列舉以下的構造單元。{(Z'Jbi (M1)a1 γΐ.(αι)η11 X i3^(Qi)n1-Yi(M1)a1(Z1)b1} m11卜桃E2 >)Π〆} m12 (in equation (24) ' R13 represents a (l+mll+ml2) valence organic group. QUQ3, Y'M1, Z1, γ3, nl, a1, bl, and n3 are as described above. mil and ml2 each independently represent an integer of 1 or more. r丨3, Mli, ml2, Q1, Q3, Y1, Μ1, Z1, Υ3, nl, al, bl, and η3 are respectively a plurality of cases, which may be the same, and may be different.) In the formula (24), as R13 The (i+mii+mi2) valent organic group shown may, for example, be selected from the group consisting of an anthracenyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, and a third butyl group. a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a lauryl group, and a carbon atom having 1 or the like in which at least one hydrogen atom of the group is substituted with a substituent or the like Alkyl groups of 2' to remove (ml Hml2) hydrogen atoms; selected from the group consisting of phenyl, 1-naphthyl, φ 2-naphthyl, 1-indenyl, 2-indenyl, 9-fluorenyl and An aromatic group having 6 to 30 carbon atoms with or without a substituent of at least one hydrogen atom of the group substituted with a substituent The group of (mi1+ml2) hydrogen atoms; from a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a pentyloxy group, a hexyloxy group, a decyloxy group, a dodecyloxy group, a ring Propyloxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclodecyloxy, cyclododecyloxy, norbornyloxy, adamantyloxy and at least one hydrogen atom of such radicals An alkoxy group having 1 to 50 carbon atoms with or without a substituent substituted by a substituent, etc., removing a group of (m11 + ml2) hydrogen atoms; and removing an amine group having a substituent containing a carbon atom 323545 94 201228842 (10) A base of 2) hydrogen atoms, and a group of (mll+m12) hydrogen atoms removed from a group having a substituent of a carbon atom. The oxime +mll+ml2) valence organic group represented by Rl3 is preferably removed from the aryl group from the viewpoint of the ease of synthesis of the raw material monomer, and is preferably removed from the group (inll+ml2) of hydrogen atoms. +ml2) a group of hydrogen atoms and a group of (mll+ml2) hydrogen atoms removed from the alkoxy group. The structural unit represented by the formula (24) includes the following structural units.

323545 95323545 95

201228842 +ΜΌΟ〇γ^»ί >^yc〇〇-M* H3C(OH2CH2C)2〇i^ ^0(CH2CH2〇)2CH3 M = U, Na, K, Cs, N(CH3)4201228842 +ΜΌΟ〇γ^»ί >^yc〇〇-M* H3C(OH2CH2C)2〇i^ ^0(CH2CH2〇)2CH3 M = U, Na, K, Cs, N(CH3)4

+ΜΌΟΟ-γ^ί KV-COO'M"· H3C(OH2CH2C)5Cf^ (3(CH2CH2〇)5CH3 M = Li, Na, K, Cs, N(CH3)4+ΜΌΟΟ-γ^ί KV-COO'M"· H3C(OH2CH2C)5Cf^ (3(CH2CH2〇)5CH3 M = Li, Na, K, Cs, N(CH3)4

*MOOC-^< Υ^γ-COO M* H3C(OH2CH2C)6〇r^ (DiCHaCHaO^CHa M = U，Na_ K. Cs. N(CH3)4 +M*CX3C-^< V^ycOCM* H3C(OH2CH2C)7C»^ N〇(CH2CH2〇)7CH3 M = Li, Na, K, Cs. N(CH3)4*MOOC-^< Υ^γ-COO M* H3C(OH2CH2C)6〇r^ (DiCHaCHaO^CHa M = U,Na_ K. Cs. N(CH3)4 +M*CX3C-^< V^ycOCM * H3C(OH2CH2C)7C»^ N〇(CH2CH2〇)7CH3 M = Li, Na, K, Cs. N(CH3)4

Η30{ΟΗ2〇Η2〇)2〇>./νΛ-〇(〇Η2〇Η2〇)2〇Η3 ♦MOOC^ '^COO'M* M = Li, Na, K. CS. N(CH3)4Η30{ΟΗ2〇Η2〇)2〇>./νΛ-〇(〇Η2〇Η2〇)2〇Η3 ♦MOOC^ '^COO'M* M = Li, Na, K. CS. N(CH3)4

H3C{OH2CH2C)4〇^A^〇(CH2CH2〇)4CH3 *MOOC^ ^ΌΟΟΤΛ* M » Li. Na, K. Cs, N(CH3)4H3C{OH2CH2C)4〇^A^〇(CH2CH2〇)4CH3 *MOOC^ ^ΌΟΟΤΛ* M » Li. Na, K. Cs, N(CH3)4

H3C(0H2CH2C)60^/Y^0(CH2CH20)6CH3 *MOOC^ ^COO-M*H3C(0H2CH2C)60^/Y^0(CH2CH20)6CH3 *MOOC^ ^COO-M*

M = Li, Na, K, Cs, N(CH3)4 Η30(ΟΗ2ΟΙ2〇7〇>^/γ^：〇(〇Η2〇Η2〇)7εΗ3 +M*OOC^ ^*COO'M* M = Li, Na, K, CS, N(CH3)4 96 323545M = Li, Na, K, Cs, N(CH3)4 Η30(ΟΗ2ΟΙ2〇7〇>^/γ^:〇(〇Η2〇Η2〇)7εΗ3 +M*OOC^ ^*COO'M* M = Li, Na, K, CS, N(CH3)4 96 323545

201228842 +M-〇3S-y^( V^ys〇3-M-H3C(OH2CH2C)2〇^ ^0(CH2CH20)2CH3 M = U, Na, K, Cs, N(CH3)4201228842 +M-〇3S-y^( V^ys〇3-M-H3C(OH2CH2C)2〇^ ^0(CH2CH20)2CH3 M = U, Na, K, Cs, N(CH3)4

+mo3sv^ )rvso3M+ H3C(OH2CH2C)6Ci ' t>(CH2CH20)6CH3 M = U, Na, K. Cs, N(CH3)4+mo3sv^ )rvso3M+ H3C(OH2CH2C)6Ci 't>(CH2CH20)6CH3 M = U, Na, K. Cs, N(CH3)4

H3C(OH2CH2C>20>VV<〇(CH2CH20)2CH3 fMO3S一 _ ^03-M+ M = U, Na. K, Cs, N(CH3)4 H3C(OH2CH2C)3〇H3C(OH2CH2C>20>VV<〇(CH2CH20)2CH3 fMO3S_ _ ^03-M+ M = U, Na. K, Cs, N(CH3)4 H3C(OH2CH2C)3〇

o(ch2ch2o)3ch3 〇3*M+ M = Li. Na, K. Cs, N{CH3)4o(ch2ch2o)3ch3 〇3*M+ M = Li. Na, K. Cs, N{CH3)4

HaCiOH^HzCUO-^/WOtCH^HaOJ^Ha • +M*03S^〜 ^'SOaM* M = U, Na, K. Cs, N(CH3)4HaCiOH^HzCUO-^/WOtCH^HaOJ^Ha • +M*03S^~ ^'SOaM* M = U, Na, K. Cs, N(CH3)4

+mo3s^ —、o3.m+ H3C(OH2CH2C)50>t!yV<0(CH2CH2〇)5CH3 M = U, Na, K. Cs, N(CH3)4+mo3s^ —, o3.m+ H3C(OH2CH2C)50>t!yV<0(CH2CH2〇)5CH3 M = U, Na, K. Cs, N(CH3)4

97 H3C(OH2CH2C)7〇>^^-〇(CH2CH2〇)7CH3 "M-OaS^·^ NS03*M+ M = Li, Na, K, Cs, N{CH3)4 323545 201228842 H3CH2COOC +m*ooch2c 丨97 H3C(OH2CH2C)7〇>^^-〇(CH2CH2〇)7CH3 "M-OaS^·^ NS03*M+ M = Li, Na, K, Cs, N{CH3)4 323545 201228842 H3CH2COOC +m* Ooch2c 丨

cooch2ch3 ch3co〇-m+Cooch2ch3 ch3co〇-m+

OOCH2CH3 (CH2)2CO〇-M+ M = Li, Na, K, Cs, N(CH3)4 h3ch2cooc fMOOC(H2C)2 M = Li，Na, K, Cs, N(CH3>4OOCH2CH3 (CH2)2CO〇-M+ M = Li, Na, K, Cs, N(CH3)4 h3ch2cooc fMOOC(H2C)2 M = Li,Na, K, Cs, N(CH3>4

HaCHzCOOCY^ y^yCOOCH2CH3 *MO0C(H2C)30^ ^〇(ch2)3co〇-m+HaCHzCOOCY^ y^yCOOCH2CH3 *MO0C(H2C)30^ ^〇(ch2)3co〇-m+

M = Li, Na, K, Cs, N(CH3)4M = Li, Na, K, Cs, N(CH3)4

H3CH2COOCY^ rV^COOCH2CH3 *MOOC(H2C)5C»^ (D{CH2)5COOM' M = Li, Na, K, Cst N(CH3)4 h3ch2cooc^»( jrycoocH2cH3 +MOOC(H2C)4〇， (D(CH2)4CO〇-M- M = Li, Na, K, Cs, N(CH3)4H3CH2COOCY^ rV^COOCH2CH3 *MOOC(H2C)5C»^ (D{CH2)5COOM' M = Li, Na, K, Cst N(CH3)4 h3ch2cooc^»( jrycoocH2cH3 +MOOC(H2C)4〇, (D( CH2)4CO〇-M- M = Li, Na, K, Cs, N(CH3)4

Η30Η200Ο0γ^ί r^yCOOCH2CH3 +M-〇OC(H2C)6〇A^ <3(ΟΗ2)β〇〇〇ΊνΓ M = U, Na, K, Cs, N(CH3)4 H3CH2COOC +MO3SH2〇Η30Η200Ο0γ^ίr^yCOOCH2CH3 +M-〇OC(H2C)6〇A^ <3(ΟΗ2)β〇〇〇ΊνΓ M = U, Na, K, Cs, N(CH3)4 H3CH2COOC +MO3SH2〇

ooch2ch3 CH2S〇3M+Ooch2ch3 CH2S〇3M+

M = Li, Na, K, Cs, N(CH3)4 I^CHzCOOCV^ rVC〇〇CH2CH3 +M-〇3S(H2C)2Qr ^ t>(CH2)2S03-M+ M = Li. Na, K, Cs, N(CH3)4M = Li, Na, K, Cs, N(CH3)4 I^CHzCOOCV^ rVC〇〇CH2CH3 +M-〇3S(H2C)2Qr ^ t>(CH2)2S03-M+ M = Li. Na, K, Cs , N(CH3)4

Η3ΟΗ2〇000~ν^ί )rV，COOCH2CH3 +M-〇3S(H2C)4Cy^ N〇(CH2)4S〇3-M+ h3ch2cooc^^( )rycooCH2cH3 WOaS^ChGT — t){CH2)3S〇3*M4 M = Li, Na, K, Cs, N(CH3)4 Μ = ϋ, Na, K, Cs, N(CH3)4Η3ΟΗ2〇000~ν^ί )rV,COOCH2CH3 +M-〇3S(H2C)4Cy^ N〇(CH2)4S〇3-M+ h3ch2cooc^^( )rycooCH2cH3 WOaS^ChGT — t){CH2)3S〇3* M4 M = Li, Na, K, Cs, N(CH3)4 Μ = ϋ, Na, K, Cs, N(CH3)4

H3CH2COOCY^ ；PyCOOCH2CH3 ^ΜΌ38(Η20)5σ 0(CH2)5S03-M^ M = Li, Na, K, Cs, N(CH3)4 h3ch2coocy^ ^rycoocH2cH3 +M-〇3S(H2C)6〇/^ <D(CH2)6S〇3'M+ M = Li, Na, K, Cs, N(CH3)4 98 323545 201228842H3CH2COOCY^ ; PyCOOCH2CH3 ^ΜΌ38(Η20)5σ 0(CH2)5S03-M^ M = Li, Na, K, Cs, N(CH3)4 h3ch2coocy^ ^rycoocH2cH3 +M-〇3S(H2C)6〇/^ &lt ;D(CH2)6S〇3'M+ M = Li, Na, K, Cs, N(CH3)4 98 323545 201228842

十 M〇oq H3C(OH2CH2C)2〇 H3C(OH2CH2C)2〇y COO-M4* (CH2CH20)2CH3 (ch2ch2o>2ch3Ten M〇oq H3C(OH2CH2C)2〇 H3C(OH2CH2C)2〇y COO-M4* (CH2CH20)2CH3 (ch2ch2o>2ch3

^MOOC h3c(oh2ch2c)3o h3c(oh2ch2c>3 CO〇-M+ 0(CH2CH20)3CH3 (CH2CH2〇hCH3 M = LI, Na, K, Cs. N(CH3)4 M = Li, NaP K, Cs, N(CH3)4 +MOOC H3C(0H2CH2C)40 h3c(oh2ch2c)4〇t^MOOC h3c(oh2ch2c)3o h3c(oh2ch2c>3 CO〇-M+ 0(CH2CH20)3CH3 (CH2CH2〇hCH3 M = LI, Na, K, Cs. N(CH3)4 M = Li, NaP K, Cs, N (CH3)4 +MOOC H3C(0H2CH2C)40 h3c(oh2ch2c)4〇t

COO'M* o(ch2ch2o)4ch3 丨(ch2ch2o)4ch3 ^ΜΌ〇ι H3C(OH2CH2C)s〇 HaCtOHgCHaCJsGrCOO'M* o(ch2ch2o)4ch3 丨(ch2ch2o)4ch3 ^ΜΌ〇ι H3C(OH2CH2C)s〇 HaCtOHgCHaCJsGr

；0〇-M+ (ch2ch2o)5ch3 (ch2ch2o)5ch3 M = Li, Na. K· Cs, N(CH3)4 M = U. Na, K. Cs, N(CH3)4;0〇-M+ (ch2ch2o)5ch3 (ch2ch2o)5ch3 M = Li, Na. K· Cs, N(CH3)4 M = U. Na, K. Cs, N(CH3)4

+MOOC H3C(0H2CH2C)60 H3C(OH2CH2C)6< COO-M* (ch2ch2o)bch3 <CH2CH2〇)eCH3+MOOC H3C(0H2CH2C)60 H3C(OH2CH2C)6<COO-M* (ch2ch2o)bch3 <CH2CH2〇)eCH3

+MOOC H3C(0H2CH2C)/0 H3C(OH2CH2C)7 丨 C〇0'M+ 0(CH2CH20)7CH3 0(CH2CH20>7CH3 M = Li, Na, K, Cs, N(CH3)4 M = U, Na, K, Cs, N(CH3)4+MOOC H3C(0H2CH2C)/0 H3C(OH2CH2C)7 丨C〇0'M+ 0(CH2CH20)7CH3 0(CH2CH20>7CH3 M = Li, Na, K, Cs, N(CH3)4 M = U, Na, K, Cs, N(CH3)4

h3ch2cooc *mo3sc6h4<H3ch2cooc *mo3sc6h4<

M = Li, Na, K, Cs. N(CH3)4 OOCH2CH3 t)C6H4S〇3-M+ h3ch2c〇〇c ^MOOCiHzChOt M = Li. NaM = Li, Na, K, Cs. N(CH3)4 OOCH2CH3 t)C6H4S〇3-M+ h3ch2c〇〇c ^MOOCiHzChOt M = Li. Na

OOCH^H3 (ch^coctiwT N(CH3)4 H3CH2COOC +MOOCC6H4,OOCH^H3 (ch^coctiwT N(CH3)4 H3CH2COOC +MOOCC6H4,

OOCH2CH3 C6H4CO〇-M+ M = Li. Na. K. Cs. N(CH3)4 式（13)所示的構造單元，從所得的離子性聚合物之耐久性的觀點，較理想為式（25)所示的構造單元。OOCH2CH3 C6H4CO〇-M+ M = Li. Na. K. Cs. N(CH3)4 The structural unit represented by the formula (13) is preferably a formula (25) from the viewpoint of durability of the obtained ionic polymer. The structural unit shown.

m15 (25) (式（25)中，R15表示（l+ml3+ml4)價有機基。Q1、Q3、γ1、Μ1 99 323545 201228842 ^ mid、mi4 及 ml5 分別 ml4、Q1、q3、γ1、μ1、 Z Y 111、9^、^)1及]13係如前述。1]]13、獨立表示1以上的整數。、ml3、ml4、( Z、Y、nl、a卜bl及n3分別為複數個的情況，可為相同，亦可為相異。）式（25)中，作為R15所示之（1+ml3+ml4)價有機基，例M15 (25) (In the formula (25), R15 represents a (l+ml3+ml4) valence organic group. Q1, Q3, γ1, Μ1 99 323545 201228842 ^ mid, mi4 and ml5 are respectively ml4, Q1, q3, γ1, μ1 , ZY 111, 9^, ^) 1 and ] 13 are as described above. 1]] 13, independently represents an integer of 1 or more. , ml3, ml4, (Z, Y, nl, ab, bl, and n3 are plural cases, respectively, and may be the same or different.) In the formula (25), as shown by R15 (1+ml3) +ml4) price organic base, examples

— .一 q，丨工么w入吻丄個氫原子被取代基取代之基等的具有或無取代基之碳原子數丨至2〇之烷基，除去（ml 3+ml4)個氫原子之基；從選自苯基、卜萘基、 2-萘基、1-蒽基、2-蒽基、9-蒽基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數6 至30的芳香基，除去（ml3+ml4)個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十一烧氧基、環丙氧基、環丁氧基、環戊氧基、環己 φ 氧基、環壬氧基、環十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去（ml3+ml4) 個II原子之基，從包含碳原子之具有取代基的胺基，除去 (nil3+ml4)個虱原子之基；以及，從包含碳原子之具有取代基的矽基，除去（ml3+ml4)個氫原子之基。作為p5所示之 (l+ml3+ml4)價有機基，從原料單體的合成容易度之觀點，較理想為從院基除去（ml 3+ml4)個氫原子之基、從芳香基除去（ral3+ml4)個氫原子之基及從烷氧基除去（ml3+ml4)個氫 323545 100 201228842 原子之基。作為式（25)所示的構造單元，可列舉以下的構造單元。- a q, a workman's work, a hydrogen atom with a substituent substituted by a substituent, etc., with or without a substituent, the number of carbon atoms 丨 to 2 〇 alkyl, remove (ml 3 + ml 4) hydrogen atoms Or a group selected from the group consisting of a phenyl group, a naphthyl group, a 2-naphthyl group, a 1-fluorenyl group, a 2-fluorenyl group, a 9-fluorenyl group, and a group in which at least one hydrogen atom of the groups is substituted with a substituent An unsubstituted aryl group having 6 to 30 carbon atoms, excluding (m3 + ml 4) hydrogen atoms; from a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a pentyloxy group, and a hexyl group Oxy, decyloxy, eleven alkoxy, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclodecyloxy, cyclododecyloxy, norbornyloxy And an alkoxy group having 1 to 50 carbon atoms having or having no substituent, wherein the adamantyloxy group and at least one hydrogen atom of the group are substituted with a substituent, and (ml3+ml4) II atoms are removed. a group of (nil3+ml4) fluorene atoms removed from an amine group having a substituent having a carbon atom; and (ml3+ml4) hydrogen atoms are removed from a thiol group having a substituent having a carbon atom base. The (1+ml3+ml4) valent organic group represented by p5 is preferably removed from the aromatic group by removing (ml 3+ml4) hydrogen atoms from the viewpoint of the ease of synthesis of the raw material monomers. (ral3+ml4) base of hydrogen atom and removal of alkoxide (ml3+ml4) hydrogen 323545 100 201228842 atomic base. The structural unit represented by the formula (25) includes the following structural units.

♦WOOC +MOOC ^MOOC♦WOOC +MOOC ^MOOC

0(CH2CH20)4CH3 M s U Na, Kt Cs, NMe4 M = U· Na. K. Cs· NMe屬 Μ»ϋ. Na, K, Cs, NMe40(CH2CH20)4CH3 M s U Na, Kt Cs, NMe4 M = U· Na. K. Cs· NMe Μ»ϋ. Na, K, Cs, NMe4

+MOOC +MOOC 4MOOC+MOOC +MOOC 4MOOC

M = U, Na, K. Cs, ΝΜβ4 M = U. Nat K, Cs, NMe4 M=Ut Na, K, Cs, NMe4 式（15)所示的構造單元之例作為式（15)所示的構造單元，從所得的離子性聚合物之電子傳輸性的觀點，較理想為式（26)所示的構造單元及式（27)所示的構造單元，更理想為式（27)所示的構造單元。 101 323545 201228842M = U, Na, K. Cs, ΝΜβ4 M = U. Nat K, Cs, NMe4 M=Ut Na, K, Cs, NMe4 Example of the structural unit represented by the formula (15) as shown in the formula (15) The structural unit is preferably a structural unit represented by the formula (26) and a structural unit represented by the formula (27) from the viewpoint of electron transport properties of the obtained ionic polymer, and more preferably represented by the formula (27). Construction unit. 101 323545 201228842

(式（26)中’ R16表示（i+ml6+ml7)價有機基，R17表示1價有機基。Q2、Q3、Y2、M2、f、Y3、n2、a2、b2 及 n3 係如前述。 ml6及ml7分別獨立表示i以上的整數。q2、q3、γ2、m2、 22^3、112、32、52及113分別為複數個的情況，可為相同， _亦可為相異。）式（26)中’作為r16所示之（i+mi6+mi7)價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁基、第2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至2〇之烷基，除去（ml6+ml7)個氫原子之基；從選自苯基、卜萘基、 φ 萘基、1-蒽基、2-蒽基、9-蒽基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數6 至30的^•香基，除去（mi6+mi7)個氫原子之基；從選自曱氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十一院氧基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去（mi6+m17) 個氫原子之基；從包含碳原子之具有取代基的胺基，除去 102 323545 201228842 (ml6+ml7)個氫原子之基；以及，從包含碳原子之具有取代基的矽基，除去（ml6+ml7)個氫原子之基◊作為所示之 (1+ ml6+ml7)價有機基，從原料單體的合成容易度之觀點，較理想為從烷基除去（ml6+ml7)個氫原子之基、從芳香基除去（ml6+ml7)個氫原子之基及從烷氧基除去（ml6+ml7) 個氫原子之基。式（26)中，作為R17所示1價有機基，例如可列舉從選自甲基、乙基、丙基、異丙基、丁基、異丁基、第2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數丨至2〇之烷基，除去i ^ 氳原子之基；從選自苯基、卜萘基、2_萘基、卜蒽基、2— 蒽基、9-蒽基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至3〇的芳香基，除去 1個氫原子之基;從選自甲氧基、乙氧基、丙氧二；氧基、戊氧基、己氧基、壬氧基、十二絲基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十二^氣基、降冰片氧基、金剛烧氧基及該些基的至少丨個被取代基取代之基等的具有或無取代基之碳原子數！至之烧氧基，除去i個氫原子之基；從包含碳原子之代基的胺基’除去丨個氫原子之基；以及，從包含碳之具有取代基的石夕基，除去i個氫原子之基。作為^所_、 1價有機基，從原料單體的合成容易度之觀點，較：從烧基除去丨個氫原子之基、從芳香基除去i個氫原^ 323545 103 201228842 基及從烷氧基除去1個氫原子之基。作為式（26)所示的構造單元，可列舉以下的構造單元(In the formula (26), 'R16 represents (i+ml6+ml7) valent organic group, and R17 represents a monovalent organic group. Q2, Q3, Y2, M2, f, Y3, n2, a2, b2 and n3 are as described above. Ml6 and ml7 each independently represent an integer greater than i. q2, q3, γ2, m2, 22^3, 112, 32, 52, and 113 are plural cases, respectively, and may be the same, and _ may also be different. (26) The 'i+mi6+mi7) valence organic group represented by r16, which may, for example, be selected from the group consisting of a mercapto group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a second group. a group having a base, a butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a lauryl group, and a group in which at least one hydrogen atom of the groups is substituted with a substituent, etc. An alkyl group having 1 to 2 carbon atoms in the substituent, which is removed from the group of (ml6+ml7) hydrogen atoms; and is selected from the group consisting of phenyl, naphthyl, φ-naphthyl, 1-indenyl, 2-indenyl, 9- a mercapto group and a group having 6 to 30 carbon atoms having or having no substituent, wherein at least one hydrogen atom of the group is substituted with a substituent, and a group of (mi6+mi7) hydrogen atoms is removed; From the group consisting of methoxy, ethoxy, propoxy, Butoxy, pentyloxy, hexyloxy, decyloxy, eleventhoxy, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclodecyloxy, ring twelve Alkoxy group having 1 to 50 carbon atoms having or having no substituent, such as an alkoxy group, a norbornyloxy group, an adamantyloxy group or a group in which at least one hydrogen atom of the group is substituted with a substituent; Mi6+m17) a hydrogen atom group; a radical having 102 323545 201228842 (ml6+ml7) hydrogen atoms removed from an amine group having a carbon atom; and a thiol group having a substituent containing a carbon atom The base of the (ml6+ml7) hydrogen atom is removed as the (1+ml6+ml7) valence organic group, and it is preferably removed from the alkyl group from the viewpoint of easiness of synthesis of the raw material monomer (ml6+ml7). a group of a hydrogen atom, a group of (6 6 ml/ml 7 ) hydrogen atoms removed from the aromatic group, and a group of (m 6 + ml 7 ) hydrogen atoms removed from the alkoxy group. In the formula (26), examples of the monovalent organic group represented by R17 include, for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, and a third butyl group. a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a lauryl group, and a carbon atom having or without a substituent in which at least one hydrogen atom of the group is substituted with a substituent An alkyl group of 2 〇, which removes a group of i ^ 氲 atoms; and at least one hydrogen atom selected from the group consisting of phenyl, naphthyl, 2-naphthyl, indanyl, 2-indenyl, 9-fluorenyl, and the same An aromatic group having 6 to 3 Å carbon atoms with or without a substituent substituted by a substituent, etc., excluding one hydrogen atom; from a methoxy group, an ethoxy group, a propoxy oxy group; , pentyloxy, hexyloxy, decyloxy, dodecyl, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclodecyloxy, cyclododexyl, The number of carbon atoms having or without a substituent such as a norbornyloxy group, a diamond alkoxy group, and at least one of the groups substituted with a substituent; To alkoxylate, to remove a group of i hydrogen atoms; to remove a group of hydrogen atoms from an amine group containing a carbon atom substituent; and to remove i from a Shihji group containing a substituent having carbon The base of a hydrogen atom. From the viewpoint of easiness of synthesis of a raw material monomer, from the viewpoint of easiness of synthesis of a raw material monomer, it is preferable to remove one hydrogen atom from a burnt group, and to remove i hydrogen atoms from an aromatic group. 323545 103 201228842 base and alkane The oxy group removes a group of one hydrogen atom. As the structural unit represented by the formula (26), the following structural unit can be cited

J(CH3)2CH2CH3>*X' 5(CH2CH2〇)3CH3 χ = F, Cl. Br, I, BPh4. CF3S〇3, CH3COOJ(CH3)2CH2CH3>*X' 5(CH2CH2〇)3CH3 χ = F, Cl. Br, I, BPh4. CF3S〇3, CH3COO

(N(CH3)2CH2CH3}+X· >(CH2CH2〇hCH3 X = F, Cl. Br, I, BPfu, CF3SO3. CH3COO(N(CH3)2CH2CH3}+X· >(CH2CH2〇hCH3 X = F, Cl. Br, I, BPfu, CF3SO3. CH3COO

iN(CH3)2CH2CH3j*X· )(CH2CH2〇bCH3 X * F. a. Br. I. BPh«. CF3SO3, CH3COOiN(CH3)2CH2CH3j*X· )(CH2CH2〇bCH3 X * F. a. Br. I. BPh«. CF3SO3, CH3COO

4(CH3)aCH2CH3pX· )(CH2CH2〇hCH3 X = F, Cl. Br, I, BPh4. CF3S03l CH3COO4(CH3)aCH2CH3pX· )(CH2CH2〇hCH3 X = F, Cl. Br, I, BPh4. CF3S03l CH3COO

{N(CH3)2CH2CH3}*X· 3(CH2CH2〇>3CH3 x = F, a. Br, I. BPh4. CF3SO3, CH3CCX>{N(CH3)2CH2CH3}*X·3(CH2CH2〇>3CH3 x = F, a. Br, I. BPh4. CF3SO3, CH3CCX>

iN(CH3)2CH2CH3}<-X· )(CH2CH2〇)3CH3 X = F. Cl. Br, I, BPh4l CF3S03> CH3COOiN(CH3)2CH2CH3}<-X· )(CH2CH2〇)3CH3 X = F. Cl. Br, I, BPh4l CF3S03> CH3COO

<(CH3J2CH2CH3}*X· 3(CH2CH20)3CH3 X = F, Cl. Br, I, BPh4, CF3S〇3, CH3CX)0<(CH3J2CH2CH3}*X·3(CH2CH20)3CH3 X = F, Cl. Br, I, BPh4, CF3S〇3, CH3CX)0

J(CH3)2CH2CH3}*X* )(CH2CH2〇)3CH3 X s f. CI. Βγ_ I, BPh4, CF3S03, CH3COOJ(CH3)2CH2CH3}*X*)(CH2CH2〇)3CH3 X s f. CI. Βγ_ I, BPh4, CF3S03, CH3COO

{N(CH3)2CH2CH3}+X'{N(CH3)2CH2CH3}+X'

〕(ch2ch2o)3ch3-X = F. Cl. Br. I. BPh4, CF3SO3. CH3COO](ch2ch2o)3ch3-X = F. Cl. Br. I. BPh4, CF3SO3. CH3COO

H13C6O >-ViN(CH3)2CH2CH3}*X-)(CH2CH20)3CH3 X = F. Cl. Br_ I. BPh4, CF3S〇3, CH3COOH13C6O >-ViN(CH3)2CH2CH3}*X-)(CH2CH20)3CH3 X = F. Cl. Br_ I. BPh4, CF3S〇3, CH3COO

H17C80 )^"V{N(CH3)2CH2CH3pC 〕(ch2ch2o)3ch3 X = F. Cl. Br. I. BPh4, CF3SO3, CH3COO -{Ν(ΟΗ3)2〇Η2〇Η3Γχ· )(ch2ch2o)3ch3H17C80 )^"V{N(CH3)2CH2CH3pC](ch2ch2o)3ch3 X = F. Cl. Br. I. BPh4, CF3SO3, CH3COO -{Ν(ΟΗ3)2〇Η2〇Η3Γχ· )(ch2ch2o)3ch3

X = F. Cl. Br. I, BPfu, CF3SO3, CH3COO 104 323545 201228842 {{Z2)b2(M2)a2Y2.(Q2)n2l/^6^ (27) 卜納n3g χ (式（27)中，R16表示（l+m16+ml7)價有機基。Q2、Q3、Y2、Μ2、 Ζ2、Υ3、η2、a2 ' b2及η3係如前述。ml6及ml7分別獨立表示 1 以上的整數 eR16、ml6、inl7、Q2、Q3、Y2、M2、Z2、 Y3、n2、a2、b2及n3分別為複數個的情況，可為相同，亦 # 可為相異。）式（27)中，作為R16所示之（i+mi6+m17)價有機基，例如可列舉從選自甲基、乙基、丙基、異丙基、丁基、異丁基、第2丁基、第3丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至2〇之烷基，除去（ml6+ml7)個氫原子之基；從選自苯基、卜萘基、參萘基、1-蒽基、2-蒽基、9-蒽基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數6 至30的芳香基’除去（ml6+ml7)個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烧氧基、環丙氧基、環丁氧基、環戍氧基、環己氧基、環壬氧基、環十二烧氧基、降冰片氧基、金剛烧氧基及該些基的至少1個氫原子被取代基取代之基等的具有或，取代基之碳原子數丨至5G找氧基，除去⑺ 個氫原子之基；從包含碳原子之具有取代基的胺基，除去 323545 105 201228842 (ml6+ml7)個氫原子之基；以及，從包含碳原子之具有取代基的矽基，除去（ml6+ml7)個氫原子之基。作為β16所示之 (1+ ml6+ml7)價有機基，從原料單體的合成容易度之觀點’較理想為從烧基除去（ml 6+ml7)個氫原子之基、從芳香基除去（ml6+ml7)個氫原子之基及從烷氧基除去（ml6+ml7) 個氫原子之基。. 作為式（27)所示的構造單元，可列舉以下的構造單元X = F. Cl. Br. I, BPfu, CF3SO3, CH3COO 104 323545 201228842 {{Z2)b2(M2)a2Y2.(Q2)n2l/^6^ (27) 纳纳n3g χ (in (27), R16 represents (l+m16+ml7) valence organic group. Q2, Q3, Y2, Μ2, Ζ2, Υ3, η2, a2'b2 and η3 are as described above. ml6 and ml7 each independently represent an integer of 1 or more eR16, ml6, Inl7, Q2, Q3, Y2, M2, Z2, Y3, n2, a2, b2, and n3 are plural cases, respectively, and may be the same, and # may be different.) In equation (27), as shown by R16 The (i+mi6+m17) valence organic group may, for example, be selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t-butyl, butyl, pentyl. a hexyl group having a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a lauryl group, and a group having at least one hydrogen atom of the group substituted with a substituent, or the like, having 1 to 2 carbon atoms An alkyl group of hydrazine, excluding (ml6+ml7) hydrogen atom groups; from at least 1 selected from the group consisting of phenyl, naphthyl, xanthenyl, 1-indenyl, 2-indenyl, 9-fluorenyl and the same The number of carbon atoms with or without a substituent, such as a group in which a hydrogen atom is substituted by a substituent The aryl group of 30' is removed (ml6 + ml7) of a hydrogen atom; from a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a pentyloxy group, a hexyloxy group, a decyloxy group, and twelve Alkoxy, cyclopropoxy, cyclobutoxy, cyclodecyloxy, cyclohexyloxy, cyclodecyloxy, cyclododecyloxy, norbornyloxy, adamantyloxy and the like a group having at least one hydrogen atom substituted by a substituent, or the like, having a carbon number of 取代 to 5G to form an oxy group, removing a group of (7) hydrogen atoms; and removing an amine group having a substituent containing a carbon atom 323545 105 201228842 (ml6+ml7) groups of hydrogen atoms; and, from a thiol group having a substituent having a carbon atom, a group of (ml6+ml7) hydrogen atoms is removed. The (1+ml6+ml7) valent organic group represented by β16 is preferably removed from the aryl group from the viewpoint of easiness of synthesis of the raw material monomer, and is preferably removed from the aldehyde group by removing (ml 6+ml7) hydrogen atoms from the group. (ml6+ml7) groups of hydrogen atoms and groups of (hydrogen atoms (ml6+ml7)) removed from the alkoxy group. As the structural unit represented by the formula (27), the following structural units can be cited

•X4{H3CH2C(H3C)2NhQ ry^i(CH3)2CH2C\i^*X· -X4{HaCH2C(H3C)2N： H3C(OH2CH2C)2C( / N〇(CH2CH2〇)2CH3 H8C(OH2CH2C)3 X = F.CI.Br.l1BPh4,CF3S〇3• X4{H3CH2C(H3C)2NhQ ry^i(CH3)2CH2C\i^*X· -X4{HaCH2C(H3C)2N: H3C(OH2CH2C)2C( / N〇(CH2CH2〇)2CH3 H8C(OH2CH2C)3 X = F.CI.Br.l1BPh4, CF3S〇3

N(CHs)zCH2CH3}+X. (CH2CHaO),CH3 X = F, C!, Er, I. BPh4l CFjSO,N(CHs)zCH2CH3}+X. (CH2CHaO), CH3 X = F, C!, Er, I. BPh4l CFjSO,

-X*{H3CHjC(H3C)2NhY^( rViNiCHafeCHzCH^X-H3C(OH2CH3C)4〇X ^0(CH2CH2〇)4CH3 X = F. CI.Br, I, BPh4. CF3SO3 •X^KHaCHaCfeNW^f ^TV-{N(CH3)2CH2CH3}*X· H3C(OH2CH2C)sCr^ ^0(CH2CH20)5CH3 X = F.CI,Br.l. BPh4, CF3SO3-X*{H3CHjC(H3C)2NhY^( rViNiCHafeCHzCH^X-H3C(OH2CH3C)4〇X ^0(CH2CH2〇)4CH3 X = F. CI.Br, I, BPh4. CF3SO3 •X^KHaCHaCfeNW^f ^TV -{N(CH3)2CH2CH3}*X· H3C(OH2CH2C)sCr^ ^0(CH2CH20)5CH3 X = F.CI, Br.l. BPh4, CF3SO3

N(CH3)2CH2CH3rX· Xt{H3CH2C{H3C)2N i(CH2CH20)bCH3 HaCiOHjCHzChiN(CH3)2CH2CH3rX· Xt{H3CH2C{H3C)2N i(CH2CH20)bCH3 HaCiOHjCHzChi

X，{H3CH2C(H3C)2N:X,{H3CH2C(H3C)2N:

HjqOHjCHzCV X=F,a, Br.l, ΒΡΙ>4, CF3SO3HjqOHjCHzCV X=F,a, Br.l, ΒΡΙ>4, CF3SO3

HjCiOHzCHzCfcOY^ rVOtCHjCHaOfcCHj ^Sn(ch3)2Ch2ch3pc· X = F.CI, Br. I, BPlv. CF3SO3HjCiOHzCHzCfcOY^ rVOtCHjCHaOfcCHj ^Sn(ch3)2Ch2ch3pc· X = F.CI, Br. I, BPlv. CF3SO3

H3C{〇H2CH2C)4〇YM rY〇(CH2CHa〇>4CH3 X^HaCHaCtHaCJzN}*^ ^^tNiCHafeCHzCHsrx-X = F, Cl, Br,丨,BPh4. CF3S〇3 N(CH3)2CH2CH3TX· (CH2CH20)7CH3 X = F, CI, Br, I，BPh4, CF3S〇3 H3C(OH2CH2C)3〇^·^ 广"Y〇(CH2CH20)3CH3 X*{H3CH2C(H3C)2N}/A^ N*XN(CH3)2CH2CH3}*X· X = F.CI. Br. I.BPh4< CF3S03 H3C(OH2CH2C)5〇Y^ ^rY〇(CH2CH20)sCH3 -XlHaCHzC^CfeN/'/'^tNiCHACHzCWX· X = F,CI,Br,l,BPh4，CF3S03H3C{〇H2CH2C)4〇YM rY〇(CH2CHa〇>4CH3 X^HaCHaCtHaCJzN}*^ ^^tNiCHafeCHzCHsrx-X = F, Cl, Br, 丨, BPh4. CF3S〇3 N(CH3)2CH2CH3TX· (CH2CH20) 7CH3 X = F, CI, Br, I, BPh4, CF3S〇3 H3C(OH2CH2C)3〇^·^ Wide"Y〇(CH2CH20)3CH3 X*{H3CH2C(H3C)2N}/A^ N*XN( CH3)2CH2CH3}*X· X = F.CI. Br. I.BPh4<CF3S03 H3C(OH2CH2C)5〇Y^ ^rY〇(CH2CH20)sCH3 -XlHaCHzC^CfeN/'/'^tNiCHACHzCWX· X = F, CI, Br, l, BPh4, CF3S03

H3C(OH?CH2C)7〇Y^( rY〇(CH2CH20)7CH3 X = F, CI.Br, I.BPhe, CF3SO3 H3C(OH；,CH2C)8〇-V^i |ry〇(CH2CH2〇)BCH3 XMHaCHjqHjOaN}^^ ^{NiCHs^CHaCHa}^ X=F,a, Br,i,BPh4.CF3S〇3 106 323545 201228842H3C(OH?CH2C)7〇Y^(rY〇(CH2CH20)7CH3 X = F, CI.Br, I.BPhe, CF3SO3 H3C(OH;,CH2C)8〇-V^i |ry〇(CH2CH2〇) BCH3 XMHaCHjqHjOaN}^^ ^{NiCHs^CHaCHa}^ X=F,a, Br,i,BPh4.CF3S〇3 106 323545 201228842

H3CHaCOOC^/^i Υ^γΟΟΟΟΗ^Ι^ X*WHiC)2HN}H2CGr^ ^OCHatNHiCMaJj}^ X = F· Cl. Βτ· I. BRu, CFaSCH CHaCOO H^CHaCOOC^^ )T\^COOCHiCH3 X^HaCJzHNMHaCJzCr ' ^(CHjWN^CHafe}*^·H3CHaCOOC^/^i Υ^γΟΟΟΟΗ^Ι^ X*WHiC)2HN}H2CGr^ ^OCHatNHiCMaJj}^ X = F· Cl. Βτ· I. BRu, CFaSCH CHaCOO H^CHaCOOC^^ )T\^COOCHiCH3 X^HaCJzHNMHaCJzCr ' ^(CHjWN^CHafe}*^·

χ = F. Cl, Br.“ ΘΡ~ CF^SO^ CH3COOχ = F. Cl, Br." ΘΡ~ CF^SO^ CH3COO

WjCHj •(CHabJNHiCH^^X-WjCHj •(CHabJNHiCH^^X-

Η3〇Η2〇0〇ι X^HaC^HNJiHaC； X» F, a. Br. I, BPfM. CF^SO^ CH^COOΗ3〇Η2〇0〇ι X^HaC^HNJiHaC; X» F, a. Br. I, BPfM. CF^SO^ CH^COO

H3CH2COOC. •X^HiCJaHNKHaCWH3CH2COOC. •X^HiCJaHNKHaCW

丨 2CHj:CHa)4{NH<CH3hpC丨 2CHj:CHa)4{NH<CH3hpC

HzCHfiOOC 'X+{{H3〇2HNKH2C)5(HzCHfiOOC 'X+{{H3〇2HNKH2C)5(

丨aPH3 (CHdsCNHiCH^X·丨aPH3 (CHdsCNHiCH^X·

X · F· Cl. Br. I· BPh4. CF^SQ^ CH^COOX · F· Cl. Br. I· BPh4. CF^SQ^ CH^COO

X = F. Cl. Sr, I. BPfu. CF3SO3, CH3COOX = F. Cl. Sr, I. BPfu. CF3SO3, CH3COO

HaCHaCOOCHaCHaCOOC

KCHj^tNtCHaiiCMaCHajV X = F, Cl, Br, I, BPh4. CFaSOa，CH3COO H3CH2COOC ^{HaCHaCtH^NKHfiCJstKCHj^tNtCHaiiCMaCHajV X = F, Cl, Br, I, BPh4. CFaSOa, CH3COO H3CH2COOC ^{HaCHaCtH^NKHfiCJst

COOCHzCH3 H3CH2COOI(CHaJ^CHaJjC^arx· •x+tHaCHaCCHaOaNKHaq:COOCHzCH3 H3CH2COOI(CHaJ^CHaJjC^arx· •x+tHaCHaCCHaOaNKHaq:

OCHaCH3 '(CH^iCHaJaCHaCHs)^OCHaCH3 '(CH^iCHaJaCHaCHs)^

X = F. Ο. Br, I, BPh4. CF3SO» CH^OO * F. Cl, Br, lr £X = F. Ο. Br, I, BPh4. CF3SO» CH^OO * F. Cl, Br, lr £

>3, CH3COO 107 323545 201228842>3, CH3COO 107 323545 201228842

X S F. α· Βτ· I, BPh4. CFjS〇3. ch3cooX S F. α· Βτ· I, BPh4. CFjS〇3. ch3coo

DQIjCH, -^{HaCHaCtHaCfeNKHaCbb OtCHzfetNiCH^CHzOy^X X = F. Cl. Br. I· BPTu· 0=38¾ CHjCOODQIjCH, -^{HaCHaCtHaCfeNKHaCbb OtCHzfetNiCH^CHzOy^X X = F. Cl. Br. I· BPTu· 0=383⁄4 CHjCOO

式（15)所示的構造單元，從所得的離子性聚合物之耐久性的觀點，較理想為式（28)所示的構造單元。 |(Q2)„2-V2 (M2)a2(Z2)b2L18 /叫納抑-丫3 m19The structural unit represented by the formula (15) is preferably a structural unit represented by the formula (28) from the viewpoint of durability of the obtained ionic polymer. |(Q2)„2-V2 (M2)a2(Z2)b2L18 / called 纳抑-丫3 m19

m20 (28) (式（28)中，R18表示（l+ml8+ml9)價有機基。Q2、Q3、Y2、 Z2、Y3、n2、a2、b2 及 n3 係如前述。ml8、ml9 及 m20 分別獨立表示1以上的整數。R18、ml8、ml9、Q2、Q3、Y2、M2、 22、丫3、112、&2、匕2及113分別為複數個的情況，可為相同，亦可為相異。） 108 323545 201228842 式IT)中作為R18所示之（i+mi8+mi9)價有機基，例如可列舉從選自甲基、乙基、丙基、異丙基'丁里丁基、第2丁基、第3丁基、戍基、己基、環己基、庚基、M20 (28) (In the formula (28), R18 represents (l+ml8+ml9) valence organic group. Q2, Q3, Y2, Z2, Y3, n2, a2, b2 and n3 are as described above. ml8, ml9 and m20 Each of the integers of 1 or more is independently indicated. R18, ml8, ml9, Q2, Q3, Y2, M2, 22, 丫3, 112, & 2, 匕2, and 113 are respectively plural, and may be the same, or may be the same It is different.) 108 323545 201228842 The (i+mi8+mi9) valence organic group represented by R18 in the formula IT) can be exemplified, for example, from methyl, ethyl, propyl, isopropyl 'butridin Base, butyl, butyl, decyl, hexyl, cyclohexyl, heptyl,

取代基取狀基相具有或無取彳m料數1至別之烷基，除去（ml8+ml9)個氣原子之基；從選自苯基、卜蔡某、 2-萘基、卜蒽基m、9_蒽基及該些基的至少^氮原子被取代絲狀鱗料有或絲代基之絲子數6 ,30的芳香基，除去(ml8+ml9)個氫原子之基；從選自曱氧基、乙氧基、丙氧基、τ氧基、戊氧基、己氧基、壬氧基、十二燒氧基、環丙氧基、環丁氧基、環戊氧基氧基、環壬氧基、環十二烧氧基、降冰片氧基、金剛烧氧基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳料數丨至5〇之魏基，除去（ml8+mi9) 個氳原子之基；從包含碳原子之具有取代基的胺基，除去 (ml8+ml9)個氫原子之基；以及，從包含碳原子之具有取代基的石夕基，除去（ml8+ml9)個氫原子之基。作為ri8所示之 (1+ ml8+ml9)價有機基，從原料單體的合成容易度之觀點，較理想為從烷基除去（m18+ml9)個氫原子之基、從芳香基除去（ml8+ml9)個氫原子之基及從烷氧基除去（ml8+ml9) 個氫原子之基。作為式（28)所示的構造單元，可列舉以下的構造單元。 109 323545 201228842 *Χ*{{Η3〇)2ΗΝΚ p(CH2CHa〇)aCHa ^((HaCkHNl^DC^CHzOhCHa ^((Η^Ο^ΗΝΚThe substituent-based phase has or does not take the number of alkyl groups 1 to another alkyl group, and removes (ml8+ml9) gas atom groups; from phenyl group, Bucai, 2-naphthyl group, diterpene group m , 9_ fluorenyl group and at least the nitrogen atom of the group are substituted for the filamentous scaly or the aryl group having 6 or 30 filaments of the silky group, and the base of (ml8+ml9) hydrogen atoms is removed; From methoxy, ethoxy, propoxy, τoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, cyclopropoxy, cyclobutoxy, cyclopentyloxy Number of carbons with or without substituents such as a group, a cyclodecyloxy group, a cyclododecyloxy group, a norbornyloxy group, a diamond alkoxy group, and a group in which at least one hydrogen atom of the group is substituted by a substituent魏 to 5 〇 Wei Ke, remove (ml8 + mi9) 氲 atomic base; remove the (ml8 + ml 9) hydrogen atom base from the amine group containing a carbon atom; and, from the inclusion of carbon atoms The Shiheji group having a substituent removes a group of (ml8+ml9) hydrogen atoms. The (1+ml8+ml9) valent organic group represented by ri8 is preferably removed from the aromatic group by removing (m18+ml9) hydrogen atoms from the alkyl group from the viewpoint of easiness of synthesis of the raw material monomers. Ml8+ml9) base of a hydrogen atom and a group of (a8-8 ml) hydrogen atoms removed from the alkoxy group. The structural unit represented by the formula (28) includes the following structural units. 109 323545 201228842 *Χ*{{Η3〇)2ΗΝΚ p(CH2CHa〇)aCHa ^((HaCkHNl^DC^CHzOhCHa ^((Η^Ο^ΗΝΚ

X = F. Cl. Br.l. BPh4_ CFaSQj. CHgCOO X = F. O. Br, I. BPh4. CF3SOJ, CHaCOO X = F_ Cl, Br· I. BPtv CF^. CHaCOO X^HaOaHNV 0(〇Η2〇Η2〇)5〇Η3 p{CH2CH20}li0H3 /XCHaCHaOhCHaX = F. Cl. Br.l. BPh4_ CFaSQj. CHgCOO X = FO Br, I. BPh4. CF3SOJ, CHaCOO X = F_ Cl, Br· I. BPtv CF^. CHaCOO X^HaOaHNV 0(〇Η2〇Η2〇 )5〇Η3 p{CH2CH20}li0H3 /XCHaCHaOhCHa

X * F. Cl, Br· * BPtVt. CF3S〇3, CHaCOO X = F, Ci, Brt I, BPhi( CFaSOj, CH3COO X = F_ a, Β「Λ BPh<_ CFsS〇3_ CHaC〇〇 X^HaCHaCCHsCfeN^ ptC^CHzOfeCHs XW^VW^^JDCCHaCHzOfeCHa •riHaCHaC^C^NJ^^CHzCHaOyaCHiX * F. Cl, Br· * BPtVt. CF3S〇3, CHaCOO X = F, Ci, Brt I, BPhi( CFaSOj, CH3COO X = F_ a, Β "Λ BPh<_ CFsS〇3_ CHaC〇〇X^HaCHaCCHsCfeN ^ ptC^CHzOfeCHs XW^VW^^JDCCHaCHzOfeCHa •riHaCHaC^C^NJ^^CHzCHaOyaCHi

X= F, a Br, I, BPbAt CF3SO)t CH^COO X» F. Cl, Br, I, ΒΡΤν», CF3SO3, CHSCOO X = F. Qt Br, I. BP»m. CF3S〇a. CH3COOX= F, a Br, I, BPbAt CF3SO)t CH^COO X» F. Cl, Br, I, ΒΡΤν», CF3SO3, CHSCOO X = F. Qt Br, I. BP»m. CF3S〇a. CH3COO

X = F. a. Br. I. BPh*. CF3SO3. CH3COO X = F. Cl. Br. I. BPfu, CF3SO3. CH3COOX = F. a. Br. I. BPh*. CF3SO3. CH3COO X = F. Cl. Br. I. BPfu, CF3SO3. CH3COO

• CF3S〇3· CH3COO x = F. a, Brt I. BPh4, CF3SO3. CH3COO X = F, a. 8r,l· BRU. CF3S〇3· CH3COO• CF3S〇3· CH3COO x = F. a, Brt I. BPh4, CF3SO3. CH3COO X = F, a. 8r, l· BRU. CF3S〇3· CH3COO

χΊί^^ΗΝκ(CHaCHaOfeCH， /~V〇(CH2CH2a)BCH3 \ )-〇(CH2CHzO>?CH3χΊί^^ΗΝκ(CHaCHaOfeCH, /~V〇(CH2CH2a)BCH3 \ )-〇(CH2CHzO>?CH3

X = F, Ο. Br. I. BPh*. CF3S〇3. CHjCOO X = F, 〇. Br. I, BPh4, CF3S〇3, CHaCOO X = F, 〇, Br, lf BPh4( CF3S〇a，CH3COO *X*{H3CH2C(H3Cfel XiHaCHjCiHaC)^ -0(0^^0)^3 ΗΟΗ,ΟΗ,Ο^X = F, Ο. Br. I. BPh*. CF3S〇3. CHjCOO X = F, 〇. Br. I, BPh4, CF3S〇3, CHaCOO X = F, 〇, Br, lf BPh4( CF3S〇a, CH3COO *X*{H3CH2C(H3Cfel XiHaCHjCiHaC)^ -0(0^^0)^3 ΗΟΗ,ΟΗ,Ο^

X = F. a. Br, I. BPh4. CFgSOj, CH3COO X = F, Cl, Br. I, BPfu, CF3S03, CH3CO〇 -^{HsCHaCCHaC^N},X = F. a. Br, I. BPh4. CFgSOj, CH3COO X = F, Cl, Br. I, BPfu, CF3S03, CH3CO〇 -^{HsCHaCCHaC^N},

CHaCHjOfeCHa X'tHaCHAHsCfeN},CHaCHjOfeCHa X'tHaCHAHsCfeN},

'(CHaCHjOaCHs'(CHaCHjOaCHs

Xf{H3CH2C(H3C)2N},Xf{H3CH2C(H3C)2N},

；〇Η2〇Η2〇>7〇Η3;〇Η2〇Η2〇>7〇Η3

X = F, Cl. Br. I, BPh^, CF3S〇3t Ch3COO X = F. Cl. Br, I, SPh^. CFjSOa. CH3COO X = F, α. Br, I, BPtv,. CF3S〇3. CHfiOQ 式（17)所示的構造單元之例 110 323545 201228842 式（17)所示的構造·¥*元，從所得的離子性聚合物之電子傳輸性的觀點，較理想為式（29)所示的構造單元。X = F, Cl. Br. I, BPh^, CF3S〇3t Ch3COO X = F. Cl. Br, I, SPh^. CFjSOa. CH3COO X = F, α. Br, I, BPtv,. CF3S〇3. CHfiOQ Example of the structural unit represented by the formula (17) 323545 201228842 The structure and the ** element represented by the formula (17) are preferably from the viewpoint of electron transport properties of the obtained ionic polymer. The constructed unit.

(式（29)中，R19表示單鍵或（l+m21)價有機基，R2()表示單鍵或（l+m22)價有機基。Q1、Q3、Y1、Μ1、Z1、Y3、rU、al、bl • 及n3係如前述。m21及m22表示分別獨立之1以上的整數。但R19為單鍵時m2i表示1，R2。為單鍵時^22表示1。Q1、 Q3、Y1、Μ1、Z1、Y3、nl、al、Μ及n3分別為複數個的情況，可為相同’亦可為相異。）式（29)中，作為R19所示之（i+m2i)價有機基，例如可列舉從選自甲基、乙基、丙基、異丙基、丁基、異丁基、第2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少1個氫原子被取代基 •取代之基等的具有或無取代基之碳原子數1至20之烷基，除去（m21)個氫原子之基；從選自苯基、卜萘基、2_萘基、 1蒽基、2-蒽基、9-蒽基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至30的芳香基’除去（m21)個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧基、 %丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少 323545 111 201228842 1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烧氧基，除去（m21)個氫原子之基；從包含石厌原子之具有取代基的胺基，除去（m2i)個氫原子之基；以及，從包含碳原子之具有取代基的矽基，除去（m21)個氫原子之基。作為R19所示之（l+m2i)價有機基，從原料單體的合成容易度之觀點，較理想為從烷基除去（m21)個氫原子之基、從芳香基除去（m21)個氫原子之基及從烷氧基除去（m21) 個氫原子之基。 ® 式（29)中，作為R2e所示之（Hm22)價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁基、第2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數〖至2〇之烷基，除去（m22)個氫原子之基；從選自苯基、卜萘基、2_萘基、卜蒽基、2-蒽基、9-蒽基及該些基的至少丨個氫原子被取 φ 代基取代之基等的具有或無取代基之碳原子數6至30的芳香基，除去（m22)個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、 %十一烷氧基、降冰片氧基、金剛烷氧基及該些基的至少 1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烧氧基，除去（m22)個氫原子之基；從包含碳原子之具有取代基的胺基，除去（m22)個氫原子之基；以及，從包含碳原子之具有取代基的矽基，除去（m22)個氳原 323545 112 201228842 子之基。作所示之（1+ηι22)價有機基，從原料單體的合成容易度之觀點，較理想為從絲除心22)個氫原子之基、從芳香基除去（m22)個氫原子之基及從烧氧基除去（m22) 個氫原子之基。(In the formula (29), R19 represents a single bond or a (l+m21) valent organic group, and R2() represents a single bond or a (l+m22) valent organic group. Q1, Q3, Y1, Μ1, Z1, Y3, rU , al, bl, and n3 are as described above. m21 and m22 represent integers of 1 or more, respectively. However, when R19 is a single bond, m2i represents 1, and R2. When it is a single bond, ^22 represents 1. Q1, Q3, Y1. Μ1, Z1, Y3, nl, al, Μ, and n3 are plural cases, respectively, and may be the same 'may be different.) In the formula (29), the (i+m2i) valence organic group represented by R19 For example, it may be selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, butyl, butyl, pentyl, hexyl, cyclohexyl, heptyl, octyl And an alkyl group having 1 to 20 carbon atoms with or without a substituent, such as a mercapto group, a fluorenyl group, a lauryl group, and at least one hydrogen atom of the group, and a substituent, etc., removing (m21) hydrogen a group derived from a group selected from the group consisting of a phenyl group, a naphthyl group, a 2-naphthyl group, a 1 fluorenyl group, a 2-fluorenyl group, a 9-fluorenyl group, and a group in which at least one hydrogen atom of the groups is substituted with a substituent. An aromatic group having 6 to 30 carbon atoms without a substituent (m21) a group of hydrogen atoms; selected from the group consisting of methoxy, ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, % propoxy , cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclodecyloxy, cyclododecyloxy, norbornyloxy, adamantyloxy and at least 323545 111 201228842 1 hydrogen atom of these groups An alkoxy group having 1 to 50 carbon atoms with or without a substituent substituted by a substituent, etc., removing a group of (m21) hydrogen atoms; and removing from an amine group having a substituent of a stone anodic atom ( M2i) a group of hydrogen atoms; and a group of (m21) hydrogen atoms removed from a thiol group having a substituent of a carbon atom. As the (l+m2i) valent organic group represented by R19, from the viewpoint of easiness of synthesis of the raw material monomer, it is preferred to remove (m21) hydrogen atoms from the alkyl group and (m21) hydrogen from the aromatic group. The base of the atom and the group of (m21) hydrogen atoms removed from the alkoxy group. In the formula (29), the (Hm22)-valent organic group represented by R2e may, for example, be selected from the group consisting of an anthracenyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a second butyl group. a third butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a lauryl group, and a substituent having at least one hydrogen atom of the group substituted with a substituent, etc., with or without a substituent The number of carbon atoms is from 2 to 2, and the base of (m22) hydrogen atoms is removed; and is selected from the group consisting of phenyl, naphthyl, 2-naphthyl, decyl, 2-indenyl, 9-fluorenyl and the same. An aromatic group having 6 to 30 carbon atoms having or having no substituent, such as a hydroxy group, is substituted with a substituent of at least one hydrogen atom, and a group of (m22) hydrogen atoms is removed; Oxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclo a methoxy group, a non-undecyloxy group, a norbornyloxy group, an adamantyloxy group, and a group having at least one hydrogen atom of the group substituted with a substituent, etc., having or having no substituent, having 1 to 50 carbon atoms Burn a group of (m22) hydrogen atoms; a group of (m22) hydrogen atoms removed from an amine group having a substituent having a carbon atom; and, removed from a thiol group having a substituent containing a carbon atom M22) 氲原323545 112 201228842 子之基. The (1+ηι22) valent organic group is preferably a group of 22 hydrogen atoms from the core and (m22) hydrogen atoms from the aromatic group from the viewpoint of easiness of synthesis of the raw material monomers. And a group of (m22) hydrogen atoms removed from the alkoxy group.

作為式（29)所示的構造單元，可列舉以下的構造單元。The structural unit represented by the formula (29) includes the following structural units.

M = Li. Na, K, Cs, N(CH3>4 Μ = Li, Na, K, Cs. N(CH3>4M = Li. Na, K, Cs, N(CH3>4 Μ = Li, Na, K, Cs. N(CH3>4

M = Li, Na, K, Cs, N(CH3)4M = Li, Na, K, Cs, N(CH3)4

H3C(OH2CH2C)3d (CH2)4S〇3 M M = Li, Na. K. Cs. N(CH^H3C(OH2CH2C)3d (CH2)4S〇3 M M = Li, Na. K. Cs. N(CH^

M = Li, Na. K. Cs. Ν(〇Η3)4 式（17)所示的構造單元’從所得的離子性聚合物之耐久性的觀點，較理想為式（30)所示的構造單元。 113 323545 201228842M = Li, Na. K. Cs. Ν(〇Η3)4 The structural unit represented by the formula (17) is preferably a structure represented by the formula (30) from the viewpoint of durability of the obtained ionic polymer. unit. 113 323545 201228842

m23 (30) ιπ25 、砰十(Q\3-Y3j (式（30)中，R21表示單鍵或（i+m23)價有機基’ R22表示單鍵或（l+m24)價有機基。Q1、Q3、γ1、μ1、Z1、Y3、nl、al、blM23 (30) ιπ25, 砰10 (Q\3-Y3j (in the formula (30), R21 represents a single bond or (i+m23) valence organic group 'R22 represents a single bond or (l+m24) valence organic group. Q1 , Q3, γ1, μ1, Z1, Y3, nl, al, bl

及τι3係如前述。m23及m24表示分別獨立之1以上的整數。但R為單鍵時m23表示1，R22為單鍵時m24表示1。m25 及m26表示分別獨立之1以上的整數em23、m24、R21、R22、 Q、Q、Y、Μ1、Z1、Y3、nl、al、bl 及 n3 分別為複數個的情況，可為相同，亦可為相異。）式C30)中，作為γ所示之（1+m23)價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁基、第2 丁基、第3 丁基、戊基、己基、環己基、庚基、、辛 ^基、癸基、月桂基及該些基的至少i個氫原子被取代基代之基等的具有或無取代基之碳原子數丨至之烷基，除去（m23)個氫原子之基；從選自苯基、卜萘基、2_=、 1-葱基、2-蒽基、9-蒽基及該些基的至少^ 、二代基取代之基等的具有或無取代基之碳虱至:: 香基，除去Οη23)個氫原子之基；從選m方丙氧基、丁氧基、戊氧基、己氧基、壬氧:氧，=、環丙氧基、環τ氧基、環絲基、環^基、;、、十二燒氧基、降冰片氧基、金剛燒氧基及該:基=少 323545 114 201228842 1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基’除去（m23)個氫原子之基；從包含碳原子之具有取代基的胺基，除去（m23)個氫原子之基；以及，從包含碳原子之具有取代基的矽基，除去（m23)個氫原子之基。作為R21所示之（l+m23)價有機基，從原料單體的合成容易度之觀點’較理想為從烷基除去（m23)個氫原子之基、從芳香基除去（m23)個氫原子之基及從烷氧基除去（ιη23；) 個氫原子之基。 _ 式（3〇)中，作為R22所示之（Hm24)價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁基、第2丁基、第3丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至2〇之烷基，除去（m24)個氫原子之基；從選自苯基、卜萘基、2-萘基、卜蒽基、2-蒽基、9-蒽基及該些基的至少1個氫原子被取 φ 代基取代之基等的具有或無取代基之碳原子數6至30的芳香基，除去（m24)個氫原子之基；從選自曱氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十一烧氧基、降冰片氧基、金剛烧氧基及該些基的至少 1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去（m24)個氫原子之基；從包含碳原子之具有取代基的胺基，除去（m24)個氫原子之基；以及，從包含碳原子之具有取代基的矽基，除去（m24)個氫原 115 323545 201228842 八之基作為R22所示之（1+πι24)價有機基，從原料單體的〇成各易度之觀點，較理想為從烷基除去（m24)個氫原子之 A、從芳香基除去（m24)個氫原子之基及從烷氧基除去（m24) 個氳原子之基。作為式（30)所示的構造單元’可列舉以下的構造單元。And τι3 are as described above. M23 and m24 represent integers of 1 or more independently. However, when R is a single bond, m23 represents 1, and when R22 is a single bond, m24 represents 1. M25 and m26 represent the case where the integers em23, m24, R21, R22, Q, Q, Y, Μ1, Z1, Y3, nl, a1, bl, and n3 which are independent of one or more are respectively plural, and may be the same, Can be different. In the formula (C30), the (1+m23)-valent organic group represented by γ may, for example, be selected from the group consisting of an anthracenyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a second butyl group. a carbon having or without a substituent such as a butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, a decyl group, a fluorenyl group, a lauryl group, and at least one hydrogen atom of the group An alkyl group having an atomic number of ,, a group of (m23) hydrogen atoms removed; and at least ^ selected from the group consisting of phenyl, naphthyl, 2_=, 1-onionyl, 2-indenyl, 9-fluorenyl, and the radicals a carbon-palladium having or without a substituent, such as a aryl group, a group of a hydrogen atom; a m-propoxy group, a butoxy group, a pentyloxy group, a hexyloxy group Base, oxime: oxygen, =, cyclopropoxy, cyclo-butoxy, cycloserpine, cyclopropenyl, ;, dodecyloxy, norbornyloxy, adamantyloxy and the base = 323545 114 201228842 One alkoxy group having 1 to 50 carbon atoms with or without a substituent substituted by a substituent such as a substituent of a hydrogen atom to remove (m23) hydrogen atoms; having a substitution from a carbon atom Amino group Removed (M23) group hydrogen atoms; and, from the carbon atoms comprising the silicon based substituent group having removed (M23) hydrogen atom of group. As the (l+m23)-valent organic group represented by R21, it is preferable to remove (m23) hydrogen atoms from the alkyl group and (m23) hydrogen from the aromatic group from the viewpoint of easiness of synthesis of the raw material monomers. The base of the atom and the radical (1, 7;) of the hydrogen atom are removed from the alkoxy group. In the formula (3〇), the (Hm24)-valent organic group represented by R22 may, for example, be selected from the group consisting of an anthracenyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a second butyl group. And a butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a decyl group, a fluorenyl group, a lauryl group, and the like, or a substituent of a group in which at least one hydrogen atom of the group is substituted with a substituent An alkyl group having 1 to 2 Å carbon atoms, excluding (m24) groups of hydrogen atoms; selected from the group consisting of phenyl, naphthyl, 2-naphthyl, diphenyl, 2-indenyl, 9-fluorenyl and the like The at least one hydrogen atom of the group is an aromatic group having 6 to 30 carbon atoms with or without a substituent, such as a group substituted with a φ substituent, and the group of (m24) hydrogen atoms is removed; Ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, a cyclodecyloxy group, a cyclodecyloxy group, a norbornyloxy group, a ruthenium alkoxy group, and a group having one or more hydrogen atoms of the group substituted with a substituent, such as a carbon atom having 1 or less 50 alkoxy a group of (m24) hydrogen atoms removed; a group of (m24) hydrogen atoms removed from an amine group having a substituent of a carbon atom; and a thiol group having a substituent containing a carbon atom is removed (m24 a hydrogen source 115 323545 201228842 octabase as the (1+πι24) valence organic group represented by R22, from the viewpoint of the enthalpy of the raw material monomers, it is preferred to remove (m24) hydrogen atoms from the alkyl group. A, a group of (m24) hydrogen atoms is removed from the aryl group, and (m24) groups of ruthenium atoms are removed from the alkoxy group. The following structural unit is exemplified as the structural unit represented by the formula (30).

116 323545 201228842116 323545 201228842

♦M*OOC♦M*OOC

0(CH2CH2〇)2CH30(CH2CH2〇)2CH3

M = Li. Na. K, Cs. NMe4 M = Li, Na, K, Cs. ΝΜβ4 M = U, Na, K, Cs. NMe4 +WOOC 0(CH2CH20)5CH3 M = Li, Na, K. Cs, NMe4 COOM*M = Li. Na. K, Cs. NMe4 M = Li, Na, K, Cs. ΝΜβ4 M = U, Na, K, Cs. NMe4 +WOOC 0(CH2CH20)5CH3 M = Li, Na, K. Cs, NMe4 COOM*

COOM+ 0(CH2CH20)2CH3 a, K, Cs. NMe4 cooivr COOM+COOM+ 0(CH2CH20)2CH3 a, K, Cs. NMe4 cooivr COOM+

0(CH2CH20)sCH3 0(CH2CH20}6CH3 0(CH2CH20)rCH3 M = Li. Na, K. Cs, NMe4 M = Li, Na, K, Cs, NMe4 M = LI, Na, K. Cs. NMe40(CH2CH20)sCH3 0(CH2CH20}6CH3 0(CH2CH20)rCH3 M = Li. Na, K. Cs, NMe4 M = Li, Na, K, Cs, NMe4 M = LI, Na, K. Cs. NMe4

0(CH2CH20)2CH3 CO〇-M+ M = Li, Na, K, Cs, ΝΜβ4 (CH2CH20>3CH3 丫 0(CH2CH20)4CH3 CO〇-M+ M = U, Na. K, Cs, NMe4 策 COOM+ M = Li, Na, K, Cs, NMe40(CH2CH20)2CH3 CO〇-M+ M = Li, Na, K, Cs, ΝΜβ4 (CH2CH20>3CH3 丫0(CH2CH20)4CH3 CO〇-M+ M = U, Na. K, Cs, NMe4 policy COOM+ M = Li , Na, K, Cs, NMe4

M = Li. Na. K, Cs. NMe4 0(CH2CH20)3CH3 COO*M+ M-U. Na,K.Cs, NMe4 0(CH2CH2〇)eCH3 〇(CH2CH2〇)6CH3 〇i cooiw* coowM = Li. Na. K, Cs. NMe4 0(CH2CH20)3CH3 COO*M+ M-U. Na,K.Cs, NMe4 0(CH2CH2〇)eCH3 〇(CH2CH2〇)6CH3 〇i cooiw* coow

0(CH2CH20)5CH3 COO.M* M = U, Na, K, Cs, NMe4 0(CH2CH20)2CH3 CO〇-M+ M = U, Na, K,Csr NMe4 0(CH2CH20)5CH3 (CH2CH20)7CH3 + M = U, Na. K, Cs. NMe4 0(CH2CH20}4CH3 M = Li, Na, K9 Cs. NMe4 0(CH2CH2〇>7CH3 COOM+ M = Li, Na. Kt Cst NMe4 COO'M^ M = Li, Na, Kt Cs· NMe4 COOM4 M - Li, Na, K, Cs, ΝΜβ4 117 323545 201228842 式（20)所示的構造單元之例式（20)所示的構造單元，從所得的電子傳輸性的觀點，較理想為式（31)所示的構造單元。0(CH2CH20)5CH3 COO.M* M = U, Na, K, Cs, NMe4 0(CH2CH20)2CH3 CO〇-M+ M = U, Na, K, Csr NMe4 0(CH2CH20)5CH3 (CH2CH20)7CH3 + M = U, Na. K, Cs. NMe4 0(CH2CH20}4CH3 M = Li, Na, K9 Cs. NMe4 0(CH2CH2〇>7CH3 COOM+ M = Li, Na. Kt Cst NMe4 COO'M^ M = Li, Na, Kt Cs· NMe4 COOM4 M - Li, Na, K, Cs, ΝΜβ4 117 323545 201228842 The structural unit represented by the formula (20) of the structural unit represented by the formula (20), from the viewpoint of the obtained electron transport property More preferably, it is a structural unit represented by the formula (31).

(式（31)中，R23表示單鍵或（1+πι27)價有機基，R24表示單鍵或（l+m28)價有機基。Q2、Q3、Υ2、Μ2、Ζ2、γ3、n2、a2、b2 及n3係如前述。m27及m28表示分別獨立之1以上的整數。但R23為單鍵時m27表示1，R24為單鍵時πι28表示1。Q2、 Q3、Υ2、Μ2、Ζ2、Υ3、n2、a2、b2及η3分別為複數個的情況，可為相同，亦可為相異。）式（31)中’作為R23所示之（l+m27)價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁芙、第2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數丨至2()之烧基，除去U27)個氫原子之基·’從選自苯基、卜萘基、2_萘美、 1'!基、2'葱基、9'f基及該些基的至少"固氫原子:取代基取代之基㈣具有或無取代基q原子數6至3〇的芳香基’除去U27)個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烧氧i、環丙氧基、環T氧基、環就基、環己氧基、環壬氧基、 323545 118 201228842 環十二燒氧基、降冰片氧基、金剛院氧基及該些基的至少 1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去（m27)個氫原子之基；從包含碳原子之具有取代基的胺基’除去（m27)個氫原子之基；以及’從包含碳原子之具有取代基的矽基，除去（m27)個氬原子之基。作為R23所示之（1+Π127)價有機基’從原料單體的合成容易度之觀點’較理想為從烷基除去（m27)個氫原子之基、從芳香基除去（m27)個氫原子之基及從烷氧基除去（m27) •個氫原子之基。式（31)中，作為R24所示之（1+m28)價有機基，例如可列舉從選自甲基、乙基、丙基、異丙基、丁基、異丁基、第2丁基、第3丁基、戊基、己基、環己基、庚基、辛基、壬基、癸基、月桂基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至2〇之烷基，除去（m28)個氫原子之基；從選自苯基、卜萘基、2_萘基、 φ 1_蒽基、2_蒽基、9—蒽基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至3〇的芳香基’除去（m28)個氫原子之基；從選自曱氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧基、環丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少 1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去（m28)個氫原子之基；從包含碳原子之具有取代基的胺基，除去（m28)個氫原子之基；以 323545 119 201228842 及’從包含碳原子之具有取代基的石夕基，除去（m28)個氫原子之基。作為R24所示之（l+m28)價有機基，從原料單體的合成容易度之觀點，較理想為從烷基除去（m28)個氫原子之基、從芳香基除去（m28)個氮原子之基及從烷氧基除去（m28) 個氫原子之基。作為式（31)所示的構造單元，可列舉以下的構造單元。(In the formula (31), R23 represents a single bond or a (1+πι27) valent organic group, and R24 represents a single bond or a (l+m28) valent organic group. Q2, Q3, Υ2, Μ2, Ζ2, γ3, n2, a2 B2 and n3 are as described above. m27 and m28 represent an integer of 1 or more, respectively. However, when R23 is a single bond, m27 represents 1, and when R24 is a single bond, πι28 represents 1. Q2, Q3, Υ2, Μ2, Ζ2, Υ3 And n2, a2, b2, and η3 are plural cases, and may be the same or different.) In the formula (31), the (l+m27)-valent organic group represented by R23 may be, for example, Selected from decyl, ethyl, propyl, isopropyl, butyl, isobutyl, 2, butyl, butyl, pentyl, hexyl, cyclohexyl, heptyl, octyl, decyl, fluorene a group having a carbon atom number of 丨 to 2 () having or having no substituent, wherein at least one hydrogen atom of the group is substituted with a substituent, and the base of the hydrogen atom is removed. a group substituted with at least a "solid hydrogen atom: substituent substituted with a phenyl group, a naphthyl group, a 2-naphthyl group, a 1'! group, a 2' onion group, a 9'f group, and the groups, with or without a substituent Q atomic number 6 to 3 〇 ing' To the group of U27) hydrogen atoms; from the group consisting of methoxy, ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodeoxygen i, cyclopropoxy , ring Toxy, cyclopropenyl, cyclohexyloxy, cyclodecyloxy, 323545 118 201228842 cyclododecanyloxy, norbornyloxy, porphyrinoxy and at least one hydrogen atom of these groups Alkoxy group having 1 to 50 carbon atoms with or without a substituent substituted by a substituent group, etc., removing a group of (m27) hydrogen atoms; removing (a27) from an amine group having a substituent containing a carbon atom a group of hydrogen atoms; and 'from the group having a substituent of a carbon atom, the group of (m27) argon atoms is removed. It is preferable that the (1+Π127) valence organic group represented by R23 is from the viewpoint of easiness of synthesis of the raw material monomer, and it is preferable to remove (m27) hydrogen atoms from the alkyl group and remove (m27) hydrogen from the aromatic group. The base of the atom and the base of the hydrogen atom removed from the alkoxy group (m27). In the formula (31), the (1+m28)-valent organic group represented by R24 may, for example, be selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl and t-butyl groups. And a butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a decyl group, a fluorenyl group, a lauryl group, and the like, or a substituent of a group in which at least one hydrogen atom of the group is substituted with a substituent An alkyl group having 1 to 2 carbon atoms and a base of (m28) hydrogen atoms; selected from the group consisting of phenyl, naphthyl, 2-naphthyl, φ 1 -fluorenyl, 2 fluorenyl, 9-fluorene And an aryl group having 6 to 3 Å of a carbon atom having or having no substituent, wherein at least one hydrogen atom of the group is substituted with a substituent, is removed (m28) of a hydrogen atom; Oxy, ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, cyclopropoxy, cyclobutoxy, cyclopentyloxy, cyclohexyl a carbon atom having or without a substituent such as an oxy group, a cyclodecyloxy group, a cyclododecyloxy group, a norbornyloxy group, an adamantyloxy group, or a group in which at least one hydrogen atom of the group is substituted with a substituent 1 to 50 alkoxy groups a group of (m28) hydrogen atoms; a group of (m28) hydrogen atoms removed from an amine group having a substituent of a carbon atom; and 323545 119 201228842 and 'from Shishi with a substituent containing a carbon atom A group of (m28) hydrogen atoms is removed. As the (l+m28) valent organic group represented by R24, from the viewpoint of easiness of synthesis of the raw material monomer, it is preferred to remove (m28) hydrogen atoms from the alkyl group and remove (m28) nitrogen from the aromatic group. The base of the atom and the group of (m28) hydrogen atoms removed from the alkoxy group. The structural unit represented by the formula (31) includes the following structural units.

HaCtOHaCHjCjaO ^'{N(CH3)2CH2CH3}+X* X = F. Cl. Br. 1. BPh4t CF3SO3. CH3COOHaCtOHaCHjCjaO ^'{N(CH3)2CH2CH3}+X* X = F. Cl. Br. 1. BPh4t CF3SO3. CH3COO

X = F. Cl, Br. I. BPh4, CF3SO3. CHjCOOX = F. Cl, Br. I. BPh4, CF3SO3. CHjCOO

式（20)所示的構造單元，從所得的離子性聚合物之耐 • 久性的觀點，較理想為式（32)所示的構造單元。The structural unit represented by the formula (20) is preferably a structural unit represented by the formula (32) from the viewpoint of durability of the obtained ionic polymer.

(式（32)中，R25表示單鍵或（l+m29)價有機基，R26表示單鍵或（l+m30)價有機基。Q2、Q3、Y2、Μ2、Z2、Y3、n2、a2、b2 及ιι3係如前述。m29及m30表示分別獨立之1以上的整數。 120 323545 201228842 但R為單鍵時m29表示1，R26為單鍵時^30表示1。m3i 及m32表示分別獨立之1以上的整數。m29、m30、R25、R26、 Q2、Q3、Y2、Μ2、Z2、Y3、π2、a2、b2 及 n3 分別為複數個的情況，可為相同，亦可為相異。）式（32)中，作為R25所示之〇+m29)價有機基，例如可列舉從選自甲基、乙基、丙基、異丙基、丁基、異丁基、第2丁基、第3丁基、戊基、己基、環己基、庚基、辛基、 • 壬基、癸基、月桂基及該些基的至少1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至20之烷基，除去（m29)個氫原子之基；從選自苯基、卜萘基、2_萘基、卜蒽基、2-蒽基、9-蒽基及該些基的至少丨個氫原子被取代基取代之基等的具有或無取代基之碳原子數6至3〇的芳香基，除去（m29)個氫原子之基；從選自曱氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧基、裱丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、 %裱十二烷氧基、降冰片氧基、金剛烷氧基及該些基的至少 1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去（m29)個氫原子之基；從包含碳原子之具有取代基的胺基，除去（m29)個氫原子之基；以及，從包含碳原子之具有取代基的矽基，除去（ra29)個氫原子之基。作為R25所示之（l+m29)價有機基，從原料單體的合成容易度之觀點，較理想為從烷基除去（m29)個氫原子之基、從芳香基除去（m29)個氫原子之基及從烷氧基除去（m29) 個氫原子之基。 323545 121 201228842 式（32)中’作為所示之（1+m3〇)價有機基，例如可列舉從選自曱基、乙基、丙基、異丙基、丁基、異丁基、第2丁基、第3 丁基、戊基、己基、環己基、庚基、、辛壬基、癸基、月桂基及該些基的至幻個氫原子被取代基取代之基等的具有或無取代基之碳原子數i至2()之烧基，除去（m30)個氫原子之基；從選自苯基、卜萘基、2_萘基、卜S基、2-蒽基、9-蒽基及該些基的至少i丁個土氮原取代基取代之基等的具有或無取代基之碳原子數6至3〇的芳香基，除去（m30)個氫原子之基；從選自甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、壬氧基、十二烷氧^、，丙氧基、環丁氧基、環戊氧基、環己氧基、環壬氧基、環十一烷氧基、降冰片氧基、金剛烷氧基及該些基的至少 1個氫原子被取代基取代之基等的具有或無取代基之碳原子數1至50之烷氧基，除去（m3〇)個氫原子之基；從包含石反原子之具有取代基的胺基，除去（m30)個氫原子之基；以及，從包含碳原子之具有取代基的矽基，除去（m3〇)個氳原子之基。作為R26所示之（l+m30)價有機基，從原料單體的合成容易度之觀點，較理想為從烷基除去（m30)個氳原子之基、從芳香基除去（m3〇)個氫原子之基及從烷氧基除去（m3〇) 個氫原子之基。作為式（32)所示的構造單元，可列舉以下的構造單元。 323545 122 201228842 ·χ*(Η3〇Η2〇(Η3〇2Ν)(In the formula (32), R25 represents a single bond or a (l+m29) valence organic group, and R26 represents a single bond or a (l+m30) valence organic group. Q2, Q3, Y2, Μ2, Z2, Y3, n2, a2 , b2 and ιι3 are as described above. m29 and m30 represent integers of 1 or more, respectively. 120 323545 201228842 However, when R is a single bond, m29 represents 1, and when R26 is a single bond, ^30 represents 1. m3i and m32 represent independent An integer of 1 or more. When m29, m30, R25, R26, Q2, Q3, Y2, Μ2, Z2, Y3, π2, a2, b2, and n3 are plural, they may be the same or different. In the formula (32), the fluorene + m29) valent organic group represented by R25 may, for example, be selected from the group consisting of a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a second butyl group. a butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, an octyl group, a fluorenyl group, a fluorenyl group, a lauryl group, and a group having at least one hydrogen atom of the group substituted with a substituent, etc. An alkyl group having 1 to 20 carbon atoms, which is a group of (m29) hydrogen atoms removed; and is selected from the group consisting of a phenyl group, a naphthyl group, a 2-naphthyl group, a decyl group, a 2-fluorenyl group, a 9-fluorenyl group, and the like. At least one hydrogen source An aromatic group having 6 to 3 carbon atoms having or without a substituent, which is substituted by a substituent, etc., excluding (m29) a hydrogen atom; from a decyloxy group, an ethoxy group, a propoxy group, Butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, decyloxy, cyclobutoxy, cyclopentyloxy, cyclohexyloxy, cyclodecyloxy, % 裱10 a dialkoxy group, a norbornyloxy group, an adamantyloxy group, and an alkoxy group having 1 to 50 carbon atoms having or without a substituent, wherein at least one hydrogen atom of the group is substituted with a substituent, (m29) a group of hydrogen atoms; a group of (m29) hydrogen atoms removed from an amine group having a substituent of a carbon atom; and (ra29) removed from a thiol group having a substituent containing a carbon atom The base of a hydrogen atom. As the (l+m29)-valent organic group represented by R25, from the viewpoint of easiness of synthesis of the raw material monomer, it is preferred to remove (m29) hydrogen atoms from the alkyl group and (m29) hydrogen from the aromatic group. The base of the atom and the group of (m29) hydrogen atoms removed from the alkoxy group. 323545 121 201228842 In the formula (32), as the (1+m3〇) valent organic group shown, for example, it may be selected from the group consisting of a mercapto group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and the like. a butyl group, a butyl group, a pentyl group, a hexyl group, a cyclohexyl group, a heptyl group, a decyl group, a fluorenyl group, a lauryl group, and the like or the like of the group in which the hydrogen atom of the group is substituted with a substituent. a group of carbon atoms i to 2 (), removing (m30) hydrogen atom groups; from a phenyl group, a naphthyl group, a 2-naphthyl group, a s- group, a 2-indenyl group, a 9-fluorenyl group And an aromatic group having 6 to 3 carbon atoms having or without a substituent, such as a group substituted with at least one of the nitrogen-substituted substituents of the group, excluding (m30) groups of hydrogen atoms; Oxy, ethoxy, propoxy, butoxy, pentyloxy, hexyloxy, decyloxy, dodecyloxy, propoxy, cyclobutoxy, cyclopentyloxy, cyclohexyl a carbon atom having or without a substituent such as an oxy group, a cyclodecyloxy group, a cycloundecyloxy group, a norbornyloxy group, an adamantyloxy group, or a group in which at least one hydrogen atom of the group is substituted with a substituent Numbers 1 to 50 An oxy group which removes (m3 〇) a hydrogen atom; a radical having (m30) a hydrogen atom removed from an amine group having a substituent of a stone counter atom; and a thiol group having a substituent having a carbon atom , remove (m3 〇) a base of a ruthenium atom. The (l+m30) valent organic group represented by R26 is preferably a group of m3 atomic groups removed from the alkyl group and (m3〇) removed from the aryl group from the viewpoint of easiness of synthesis of the raw material monomers. a group of a hydrogen atom and a group of (m3〇) hydrogen atoms removed from the alkoxy group. The structural unit represented by the formula (32) includes the following structural units. 323545 122 201228842 ·χ*(Η3〇Η2〇(Η3〇2Ν)

X^HgCHzCHHaChNIX^HgCHzCHHaChNI

•X*{H3〇HiC<H3C>2N) 〇(CH2CH2〇)2CH3 OiCHjCHaOJaCHa X » F, a. Br,l. BPh, CF3S03, CH3COO X - F. O. Br. I. BPh4, CFjSOg, CH3COO X*{H3CHaC(H3C)2N) · ·χ*{Η3ΟΗ2〇<Η3〇2Ν)4 Χ^ΟΗ/ίΗΑΝ}• X*{H3〇HiC<H3C>2N) 〇(CH2CH2〇)2CH3 OiCHjCHaOJaCHa X » F, a. Br,l. BPh, CF3S03, CH3COO X - FO Br. I. BPh4, CFjSOg, CH3COO X*{H3CHaC (H3C)2N) · ·χ*{Η3ΟΗ2〇<Η3〇2Ν)4 Χ^ΟΗ/ίΗΑΝ}

0(CH2CH2〇}4CH) X - Fr a Br, I. BPh4. CF^SOa，CH3COO0(CH2CH2〇}4CH) X - Fr a Br, I. BPh4. CF^SOa, CH3COO

CXCHaCHjOJgCHa X = F. Cl, Br. I. BPh4, CF3SO3, CH3COO (C)aN)CXCHaCHjOJgCHa X = F. Cl, Br. I. BPh4, CF3SO3, CH3COO (C)aN)

〇iCH2CH2〇)BCH3 X = F. Cl, Br. I, BPh4. CF3S〇3, CH^COO〇iCH2CH2〇)BCH3 X = F. Cl, Br. I, BPh4. CF3S〇3, CH^COO

0(εΗ2〇Η2〇)2〇Η3 X = F, Ct. Br, I, BPh4. CF3SO3, CH}COO {NtCH^HaCH^X-0(εΗ2〇Η2〇)2〇Η3 X = F, Ct. Br, I, BPh4. CF3SO3, CH}COO {NtCH^HaCH^X-

WCH^H2CH^r 0(CH2CH2〇hCH3 X = F, Cl* Br· I· BPh4, CFgSOa, CH3COO (N(CH3)2CH2CH^+X-WCH^H2CH^r 0(CH2CH2〇hCH3 X = F, Cl* Br· I· BPh4, CFgSOa, CH3COO (N(CH3)2CH2CH^+X-

OiCHaCHaO^CH, X = F, C*, Br· lt BPh4· CF：jS03· CH3COOOiCHaCHaO^CH, X = F, C*, Br· lt BPh4· CF:jS03· CH3COO

{N(CH3>2CHaCH3TX 0{CH2CH2〇)3CH3 X ^ F, Ct, Br, I. BPh4, CFgSOa. CH3COO (NiCHjfeCHzCH^ 0(CH2CH2〇)4CH3 X = F. Cl. Br. 1. BPh4· CF3SO3. CHaCOO {NiCHafaCHzCHj)4^{N(CH3>2CHaCH3TX 0{CH2CH2〇)3CH3 X ^ F, Ct, Br, I. BPh4, CFgSOa. CH3COO (NiCHjfeCHzCH^ 0(CH2CH2〇)4CH3 X = F. Cl. Br. 1. BPh4· CF3SO3. CHaCOO {NiCHafaCHzCHj)4^

0(CH3CH20)bCH, X = F, a· Br, I· BPh4· CFjjSO^ CHaCOO0(CH3CH20)bCH, X = F, a· Br, I· BPh4· CFjjSO^ CHaCOO

OtCHjCH^CH, X « F. α» ΒΓΛ BPtu* CF3SO3, CHaCOOOtCHjCH^CH, X « F. α» ΒΓΛ BPtu* CF3SO3, CHaCOO

0(CH2CH2〇>sCH3 mCH^HiCHipC )C * F. Cl. Br. I. ePh4, CFaSOi CHgCOO0(CH2CH2〇>sCH3 mCH^HiCHipC )C * F. Cl. Br. I. ePh4, CFaSOi CHgCOO

0(CH2CH2〇)aCH3 {NCCHaiaCHzCHgrx-X = F, Cl, Br. I. BPh4, CF3S〇3, CH3COO0(CH2CH2〇)aCH3 {NCCHaiaCHzCHgrx-X = F, Cl, Br. I. BPh4, CF3S〇3, CH3COO

Xi ckchXi ckch

；H2CH/})4CHa if^CHafeCHafCHjTX· X = F. Cl. Bf. I. BPh4, CF3303, CH3COO;H2CH/})4CHa if^CHafeCHafCHjTX· X = F. Cl. Bf. I. BPh4, CF3303, CH3COO

OfCHzCHTOJeCHa {N(CH3)2CH2CHs>*X· X = F. Cl. Br. I. BPh4. CF3SO3. CH3COOOCCHzCHzOJzCHaOfCHzCHTOJeCHa {N(CH3)2CH2CHs>*X· X = F. Cl. Br. I. BPh4. CF3SO3. CH3COOOCCHzCHzOJzCHa

0(CH2CH2〇)eCH3 {NCCH^jCH^CH^^X- X = F. Cl. Br, I, BPh4_ CF3S〇3_ CHsCOO OtCHgCH^hCHa0(CH2CH2〇)eCH3 {NCCH^jCH^CH^^X- X = F. Cl. Br, I, BPh4_ CF3S〇3_ CHsCOO OtCHgCH^hCHa

0(ΟΗ2〇Η2〇)τ〇Η3 (NiCHahCHaCH^X-X = F. Cl, Br. I. BPh<. CF3SO3, CH3CCX>0(ΟΗ2〇Η2〇)τ〇Η3 (NiCHahCHaCH^X-X = F. Cl, Br. I. BPh<. CF3SO3, CH3CCX>

0(ΟΗ2〇Η2〇>4〇Η30(ΟΗ2〇Η2〇>4〇Η3

{NiCHgXjCHaCHa}4^ X = F, Cl. Br.l. BP〜· CFjSO》CH3COO0(CH2CH20)5CH3 X = F. Cl. Br. I. QPh4, CF3S〇3. CH3COO 0(ΟΗ2〇Η2〇)6〇Η3{NiCHgXjCHaCHa}4^ X = F, Cl. Br.l. BP~· CFjSO"CH3COO0(CH2CH20)5CH3 X = F. Cl. Br. I. QPh4, CF3S〇3. CH3COO 0(ΟΗ2〇Η2〇)6 〇Η3

{N(CH3)2CH2CH3)+X-X = F. a. Br, I, BPN4, CFaSOj, CH3COO 0(CH2CH2〇)/CH3{N(CH3)2CH2CH3)+X-X = F. a. Br, I, BPN4, CFaSOj, CH3COO 0(CH2CH2〇)/CH3

X = F. Cl. Br, l( BP»m. CF3SO3. CHaCOOX = F. Cl. Br, l( BP»m. CF3SO3. CHaCOO

{N(CH3l2CH2CH3pC_ {r^CHafeCUzCHaJ+X· X = F, Cl, Br, I. BPh^, CF3S03f CH3C〇〇 X * F. Cl, Br. I, BPh^, CF3SO3. CH3COO •其他構造單元關於本實施態樣的離子性聚合物，可更具有式（33)所 123 323545 201228842 示的1種以上的構造單元。少 (33) (式（33)中，Ar5表示具有或無取代基之2價芳香族基或具有或無取代基之2價芳香族胺殘基，X’表示具有或無取代基之亞胺基、具有或無取代基之伸矽基、具有或無取代基之伸乙烯基或伸乙炔基，m33及m34表示分別獨立之0或 1，m33及m34中至少之一為1。） φ 式（33)中，作為Ar5所示的2價芳香族基，可列舉2 價芳香族烴基及2價芳香族雜環基。作為該2價芳香族基，例如可列舉從選自苯環、吼咬環、1，2-二嗪（diazine)環、 1，3-二嗓環、1，4-二嗓環、1，3, 5-三嗓環、咬喃環、°比口各環、嗟吩環、α比嗤環（pyrazole)、味°坐環、α惡哇（oxazole) 環、°惡二^(oxadiazole)環及氮雜二唾（azadiazole)環等單環式芳香環，除去2個氫原子之2價基；從選自該單環式芳香環所成群中2個以上縮合之縮合多環式芳香環，除 ® 去2個氫原子之2價基；從選自該單環式芳香環及該縮合多環式芳香環所成群中2個以上的芳香環，以單鍵、伸乙烯基或伸乙炔基連結所成的芳香環集合，除去2個氫原子之2價基；以及，從該縮合多環式芳香環或該芳香環集合相鄰的2個芳香環以伸曱基、伸乙基、羰基及亞胺基等2 價基橋接之有橋多環式芳香環，除去2個氫原子之2價基。縮合多環式芳香環，從離子性聚合物的溶解性之觀點，縮合2至4個單環式芳香環較理想。該單環式芳香環 124 323545 201228842 的縮^數尽，更理想為2至3，更加理想為2。個芳從離子性聚合物的溶解性之觀點，2至4 該芳香環的連結數目，更理^ 2 2至4個從離子性聚合物的溶解性之觀點，想為⑴二：為理2想。橋接的芳香環的數目，更理作為單環式芳香環，例如m…{N(CH3l2CH2CH3pC_ {r^CHafeCUzCHaJ+X· X = F, Cl, Br, I. BPh^, CF3S03f CH3C〇〇X * F. Cl, Br. I, BPh^, CF3SO3. CH3COO • Other structural units on this The ionic polymer of the embodiment may further have one or more structural units represented by the formula (33), 123 323545 201228842. Less (33) (In the formula (33), Ar5 represents a valence of 2 with or without a substituent. An aromatic group or a divalent aromatic amine residue having or without a substituent, X' represents an imido group having or without a substituent, a fluorenyl group having or without a substituent, and a vinyl group having or without a substituent Or an ethynyl group, m33 and m34 each independently represent 0 or 1, and at least one of m33 and m34 is 1.) φ In the formula (33), as the divalent aromatic group represented by Ar5, a divalent aromatic group is exemplified. a hydrocarbon group and a divalent aromatic heterocyclic group. Examples of the divalent aromatic group include a benzene ring, a bite ring, a 1,2-diazine ring, and a 1,3-dioxane ring. , 1,4-dioxane, 1,3,5-trianthene ring, nucleus ring, ° specific ring, porphin ring, α-pyrazole, taste ° ring, α-wow ( Oxazole) ring, ° 恶二^(oxa Diazole) a monocyclic aromatic ring such as a ring and an azadiazole ring, which removes a divalent group of two hydrogen atoms; and a condensed polycyclic ring of two or more condensations selected from the group consisting of the monocyclic aromatic ring An aromatic ring, in addition to the 2 valent group of 2 hydrogen atoms; 2 or more aromatic rings selected from the group consisting of the monocyclic aromatic ring and the condensed polycyclic aromatic ring, with a single bond, ethylene a set of aromatic rings formed by linking a acetylene group or a acetylene group, and removing a divalent group of two hydrogen atoms; and, from the condensed polycyclic aromatic ring or the two aromatic rings adjacent to the aromatic ring, A bimodal aromatic ring with a 2-valent group such as an ethyl group, a carbonyl group or an imine group bridged to remove a divalent group of two hydrogen atoms. A condensed polycyclic aromatic ring from the viewpoint of solubility of an ionic polymer Condensation of 2 to 4 monocyclic aromatic rings is preferred. The monocyclic aromatic ring 124 323545 201228842 has a reduced number of tubes, more preferably 2 to 3, more preferably 2. Dissolution of the aryl polymer from the ionic polymer Sexual point of view, 2 to 4 the number of linkages of the aromatic ring, more 2 2 to 4 from the viewpoint of solubility of the ionic polymer I want to think of (1) two: for reason 2. The number of bridging aromatic rings is more reasonable as a single-ring aromatic ring, such as m...

53 作為縮合多環式芳香，例如可列舉以下的環〇 27^δ< 125 20122884253 As a condensed polycyclic aromatic, for example, the following ring 〇 27^δ< 125 201228842

〇-=~〇〇~_= O 〇~n_hO 89 90 2i 作為有橋多環式芳香環，例如可列舉以下的環。 126 323545 201228842 M 93 94〇-=~〇〇~_= O 〇~n_hO 89 90 2i Examples of the bridged polycyclic aromatic ring include the following rings. 126 323545 201228842 M 93 94

從離子性聚合物的電子接受性及電洞接受性的任一者或兩者的觀點，Ar5所示的2價芳香族基為從式45至60、 61至71、77至80、91、92、93或96所示的環，除去2 個氩原子之2價基較理想，從式45至50、59、60、77、 80、91、92或96所示的環，除去2個氫原子之2價基更理想。上述2價芳香族基，可具有取代基。作為該取代基，可列舉關於前述Q1的說明中舉例之取代基等。式（33)中，作為Ar5所示的2價芳香族胺殘基，可列舉式（34)所示的基。From the viewpoints of either or both of electron acceptability and hole acceptability of the ionic polymer, the divalent aromatic group represented by Ar5 is from the formulas 45 to 60, 61 to 71, 77 to 80, 91, For the ring shown in 92, 93 or 96, it is preferred to remove the divalent group of two argon atoms, and remove two hydrogens from the ring represented by formula 45 to 50, 59, 60, 77, 80, 91, 92 or 96. The divalent base of the atom is more desirable. The divalent aromatic group may have a substituent. Examples of the substituent include a substituent exemplified in the description of the above Q1. In the formula (33), the divalent aromatic amine residue represented by Ar5 may, for example, be a group represented by the formula (34).

Ar11——N "Η一^ m35 Ar12 (34) (式（34)中，Ar6、Ar7、Ar8及Ar9分別獨立表示具有或無取 127 323545 201228842 代基之伸芳基或具有或無取代基之2價雜環基，紅1()、Ar„ 及Ar分別獨立表示具有或無取代基之芳香基或具有或無取代基之1價雜環基，nl0及m35分別獨立表示〇或丨。）作為前述伸芳基、芳香基、2價雜環基、丨價雜環基具有之取代基，例如可列舉齒原子、烷基、烷氧基、烷硫基、芳香基、芳香氧基、芳香硫基、芳香基烧基、芳香基烧氧基、芳香基烧硫基、烯基、炔基、芳香基烯基、芳香基炔基、醯基、醯氧基、醯胺基、醯亞胺基、亞胺殘基、取代擊胺基、取代石夕基、取代石夕氧基、取代石夕硫基、取代石夕胺基、氰基硝基、1 貝雜環基、雜芳香氧基（heter〇ary ίο”）、雜芳香硫基、烷氧基羰基、芳香氧基羰基、芳香基烷氧基羰基、雜芳香氧基羰基及羧基。該取代基，可為乙烯基 (vinyl)、乙炔基、丁烯基、丙烯酸基、丙烯酸酯基、丙烯醯胺基、甲基丙烯酸基、甲基丙烯酸酯基、甲基丙烯醯胺基、乙烯醚基、乙烯胺基、矽烷醇基、具有小員環（環丙基、 • 環丁基、環氧基、氧雜環丁基（oxetane)、雙乙烯酮基 (diketene)、環硫化物基（episulfide)等）之基、内酯基、内酿胺基或含有矽氧烷衍生物的構造之基等交聯基。 nl〇為0的情況’ Ar6中的碳原子與Ar8中的碳原子可直接結合，亦可隔著_〇_、—S—等2價基而結合。作為Ar1D、Ar11、Ar12所示的芳香基及1價雜環基’可列舉與前述作為取代基說明的例示之芳香基及1價雜環基相同者。作為Ar6、Ar7、Ar8及Ar9所示的伸芳基，例如從芳香 128 323545 201228842 她除去2健合於構成μ環的碳原子之⑽子殘留的 =子團所構成祕。作為伸絲，例如可列舉具有苯環的 :、具有縮合_基、苯環或縮合環2個以切單鍵或隔者2價有機基（例如伸乙縣料縣）而結合之基。伸芳基之碳原子數，通常為6至6G，較理想為7至48。作為伸芳基的具體例，例如可列舉伸苯基、伸聯笨基、〇至&烧氧基伸笨基、a en絲伸苯基、卜伸萘基、2_伸萘基t 1 —伸®'基、2-伸S、基及9-伸蒽基。伸芳基的氫原子可被敗原：取代。作為被氟原子取代之伸芳基，例如可列舉四敦基。伸芳基中’較理想為伸笨基、伸聯苯基、Cl至匕2 貌氧基伸苯基及〇至Cu烷基伸苯基。作為Ai*6、At·7、AI·8及Ar9所示的2價雜環基，可列舉破雜環化合物除去2個氫原子_的原子團所構成的基。戶=言胃雜環化合物，係指具有環狀構造的有機化合物中，作 :構，的元素，不只是碳原子，包含選自氧原子、硫原、I原子、磷原子、侧原子、石夕原子、石西原子、碌原子 p申原子等所成群的1種以上的雜原子之有機化合物。2 =雜環基亦可具有取代基。2價雜環基的碳原子數，通常 ^ 4至60，較理想為4至20。於2價雜環基的碳原子數，嘍^含取代基的碳原子數。作為2價雜環基，例如可列舉。吩二基、〇!至。烷基噻吩二基、吡咯二基、呋喃二基、Ar11——N "Η一^m35 Ar12 (34) (In the formula (34), Ar6, Ar7, Ar8 and Ar9 respectively represent an extended aryl group with or without a substituent of 127 323545 201228842 The divalent heterocyclic group, red 1 (), Ar „ and Ar each independently represent an aryl group having or not having a substituent or a monovalent heterocyclic group having or without a substituent, and n10 and m35 each independently represent ruthenium or osmium. Examples of the substituent of the above-mentioned extended aryl group, aryl group, divalent heterocyclic group, and fluorene heterocyclic group include a tooth atom, an alkyl group, an alkoxy group, an alkylthio group, an aromatic group, and an aromatic oxy group. Aromatic thiol, arylalkyl, aryloxy, arylthio, alkenyl, alkynyl, arylalkenyl, arylalkynyl, fluorenyl, decyloxy, decylamino, sulfhydryl Amine, imine residue, substituted amine group, substituted sulphate, substituted oxalyloxy group, substituted oxasulfanyl group, substituted oxalylamino group, cyano nitro group, 1 benzene heterocyclic group, heteroaromatic oxygen (heter〇ary ίο), heteroaromatic thio, alkoxycarbonyl, aryloxycarbonyl, arylalkoxycarbonyl, heteroaryloxy And carboxyl group. The substituent may be vinyl, ethynyl, butenyl, acrylate, acrylate, acrylamide, methacrylic, methacrylate, methacrylamido, ethylene Ether group, vinylamine group, stanol group, having a small member ring (cyclopropyl, • cyclobutyl, epoxy, oxetane, diketene, episulfide) a crosslinking group such as a group, a lactone group, an internal amine group or a structure containing a siloxane derivative. When nl〇 is 0, the carbon atom in Ar6 may be directly bonded to the carbon atom in Ar8, or may be bonded via a divalent group such as _〇_, -S-. The aryl group and the monovalent heterocyclic group represented by Ar1D, Ar11 and Ar12 are the same as the exemplified aromatic group and monovalent heterocyclic group described above as the substituent. As the aryl group represented by Ar6, Ar7, Ar8 and Ar9, for example, from the fragrance 128 323545 201228842, it is secreted by the subgroup of (10) which is bonded to the carbon atom constituting the μ ring. Examples of the stretching wire include a group having a benzene ring, a condensed group, a benzene ring or a condensed ring, which are bonded by a singular bond or a divalent organic group (e.g., Yixian County). The number of carbon atoms in the aryl group is usually from 6 to 6 G, more preferably from 7 to 48. Specific examples of the aryl group include, for example, a phenyl group, a phenyl group, an anthracene group, an alkoxy group, a phenyl group, a naphthyl group, and a 2-naphthyl group. Stretch®' base, 2-extension S, base and 9-stretch base. The hydrogen atom of the aryl group can be destroyed: substituted. As the extended aryl group substituted by a fluorine atom, for example, a tetradyl group can be mentioned. In the aryl group, it is preferred to extend the phenyl group, the phenyl group to the phenyl group, and the phenyl group to the phenyl group. Examples of the divalent heterocyclic group represented by Ai*6, At·7, AI·8 and Ar9 include a group consisting of a radical in which a heterocyclic compound is removed and two hydrogen atoms are removed. The term "stomach heterocyclic compound" refers to an organic compound having a cyclic structure, which is an element of a structure, not only a carbon atom, but is selected from the group consisting of an oxygen atom, a sulfur atom, an I atom, a phosphorus atom, a side atom, and a stone. An organic compound of one or more kinds of hetero atoms grouped in a group such as an atomic atom, a lithiate atom, or a sulfonium atom. 2 = Heterocyclic group may have a substituent. The number of carbon atoms of the divalent heterocyclic group is usually from 4 to 60, more preferably from 4 to 20. The number of carbon atoms in the divalent heterocyclic group, and the number of carbon atoms in the substituent. Examples of the divalent heterocyclic group include a divalent heterocyclic group.吩二基,〇!到. Alkylthiophenediyl, pyrrole diyl, furandiyl,

基匕至Ci2院基°比咬一基、建嗪（pyridazine)二基、 D密嘴_ A 一暴、吡嗪（pyrazine)二基、三嗪二基、吡咯烷 pyrr〇i1(ilne)二基、哌啶（piperidine)二基、喹啉 323545 129 201228842 (quinol ine)二基及異啥淋二基，其中較理想為嗟吩二基、 (^至C12烷基噻吩二基、吡啶二基及（^至C12烷基吡啶二基。包含2價芳香族胺殘基作為構造單元之離子性聚合物，可再具有其他構造單元。作為其他構造單元，例如可列舉伸苯基及苐二基（fluorenediyl)等伸芳基。離子性聚合物中，包含交聯基者較理想。作為式（34)所示的芳香族胺殘基，可例示從下述式101 至110.所示的芳香族胺除去2個氫原子之基。Based on the base to the Ci2, a base, a pyridazine diyl, a D-mouth, a pyrazine, a triazine, a pyrrolidine pyrrium i1 (ilne) Piper, piperidine diyl, quinoline 323545 129 201228842 (quinol ine) diyl and isoindole diyl, of which more preferred is porphin diyl, (^ to C12 alkylthiophenediyl, pyridyl diyl And (^ to C12 alkylpyridinyl group. The ionic polymer containing a divalent aromatic amine residue as a structural unit may have other structural units. As other structural units, for example, a phenyl group and a fluorenyl group may be mentioned. The fluorinated group is preferably an aryl group. The ionic polymer preferably contains a crosslinking group. The aromatic amine residue represented by the formula (34) can be exemplified by the following formula 101 to 110. The amine group removes the base of two hydrogen atoms.

式101至110所示的芳香族胺，在可生成2價芳香族胺殘基的範圍下可具有取代基，作為該取代基，可列舉關於前述Q1的說明中例示的取代基等。於存在複數個取代基之情況，該些可為相同，亦可為相異。 130 323545 201228842 式（33)中，X’表示具有或無取代基之亞胺基、具有或無取代基之伸矽基、具有或無取代基之伸乙烯基或伸乙炔基。作為亞胺基、伸矽基或伸乙烯基具有的取代基，例如可列舉甲基、乙基、丙基、異丙基、丁基、異丁基、第2 丁基、第3 丁基、戊基、己基、環己基、庚基、辛基、2一乙基己基、壬基、癸基、3, 7-二曱基辛基及月桂基等碳原子數1至20的烷基；以及，苯基、丨_萘基、2_萘基、卜蒽基、2-蒽基及9-蒽基等碳原子數6至30的芳香基。於存在複數個取代基之情況，該些可為相同，亦可為相異。從離子性聚合物對空氣、濕氣或熱的安定性的觀點， X’為亞胺基、伸乙烯基及伸乙炔基較理想。從離子性聚合物的電子接受性及電洞接受性的觀點， m33為1、m34為0較理想。作為式（33)所示的構造單元，從離子性聚合物的電子接受性的觀點’式（35)所示的構造單元較理想。 • —(-Ar13)— (35) (式（35)中，Ar13表示具有或無取代基之咐i啶二基、具有或無取代基之吡嗪二基、具有或無取代基之嘧啶二基、具有或無取代基之噠嗪（pyridazine)二基或具有或無取代基之二°秦二基。）作為吡咬（pyridine)二基可具有的取代基，可列舉關於前述Q1的說明中例示的取代基。於存在複數個取代基之情況，該些可為相同，亦可為相異。 131 323545 201228842 作為吡嗪（pyrazine)二基可具有的取代基，可列舉關於前述Q1的說明中例示的取代基。於存在複數個取代基之情況，該些可為相同，亦可為相異。作為嘧啶二基可具有的取代基，可列舉關於前述Ql的說明中例示的取代基。於存在複數個取代基之情況，該些可為相同，亦可為相異。作為噠嗪（pyridazine)二基可具有的取代基，可列舉關於前述Q1的說明中例示的取代基.於存在複數個取代基The aromatic amine represented by the formulae 101 to 110 may have a substituent in the range in which a divalent aromatic amine residue can be formed, and examples of the substituent include the substituents exemplified in the description of Q1. Where a plurality of substituents are present, the ones may be the same or different. 130 323545 201228842 In the formula (33), X' represents an imido group having or not having a substituent, a mercapto group having or not having a substituent, and a vinyl group or an ethynyl group having or without a substituent. Examples of the substituent of the imido group, the mercapto group or the vinyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, and a ternary butyl group. An alkyl group having 1 to 20 carbon atoms such as pentyl, hexyl, cyclohexyl, heptyl, octyl, 2-ethylhexyl, anthracenyl, fluorenyl, 3,7-didecyloctyl and lauryl; An aromatic group having 6 to 30 carbon atoms such as a phenyl group, a fluorene-naphthyl group, a 2-naphthyl group, a diterpene group, a 2-fluorenyl group and a 9-fluorenyl group. In the case where a plurality of substituents are present, the ones may be the same or may be different. From the viewpoint of the stability of the ionic polymer to air, moisture or heat, X' is preferably an imido group, a vinyl group and an ethynyl group. From the viewpoints of electron acceptability and hole acceptability of the ionic polymer, it is preferable that m33 is 1, and m34 is 0. The structural unit represented by the formula (33) is preferably a structural unit represented by the formula (35) from the viewpoint of electron acceptability of the ionic polymer. • —(-Ar13)— (35) (In the formula (35), Ar13 represents a pyridinium group having or without a substituent, a pyrazinediyl group having or without a substituent, and a pyrimidine having or not having a substituent. a pyridazine diyl group having or not having a substituent or a dioctyldiyl group having or without a substituent.) The substituent which the pyridine diyl group may have may be exemplified in the above Q1. The substituents exemplified. In the case where a plurality of substituents are present, the ones may be the same or different. 131 323545 201228842 The substituent which may be exemplified in the above description of Q1 may be mentioned as a substituent which the pyrazine diyl group may have. In the case where a plurality of substituents are present, the ones may be the same or different. Examples of the substituent which the pyrimidinediyl group may have include the substituents exemplified in the above description of Q1. In the case where a plurality of substituents are present, the ones may be the same or different. The substituent which may be possessed by the pyridazine diradical group may be a substituent exemplified in the description of the above Q1. In the presence of a plurality of substituents

作為二嗪二基可具有的取代基，可列舉關於前述《的說明中例示的取代基。於存在複數個取代基之情況，該些可為相同，亦可為相異。 •構造單元的比例所含的全部構造單元中， •末端的構造軍元關於本實施態樣的離子性聚合物所含的式所示的構造單元、式（15)所示的構造單元、式（17)所示的構造單 _元及式（20)所示的構造單元之數目的合計，從有機乩元件的發光效率之觀點，除末端的構造單元之該離子性聚合物較理想為30莫耳％至1〇〇莫界％。作為關於本實施態樣的離子性聚合物之末端的構造單Examples of the substituent which the diazinediyl group may have include the substituents exemplified in the above description. In the case where a plurality of substituents are present, the ones may be the same or different. In all the structural units included in the ratio of the structural unit, the structural unit at the end is a structural unit represented by the formula contained in the ionic polymer of the present embodiment, a structural unit represented by the formula (15), and a formula The total number of structural units shown in (17) and the number of structural units represented by the formula (20) is preferably 30 in terms of the luminous efficiency of the organic germanium element except for the terminal structural unit. Mol% to 1%. A construction sheet as an end of the ionic polymer of the present embodiment

、丙基、異甲氧基、乙氧基、丙氧基、 ‘丁基、第3 丁基、戊基、具戊辛基、壬基、癸基、月桂基、異丙氧基、丁氧基、異丁氧基、 323545 132 201228842 第2 丁氧基、第3 丁氧基、戊氧基、己氧基、環己氧基、庚氧基、辛氧基、2-乙基己氧基、壬氧基、癸氧基、3, 7__ 二曱基辛氧基、月桂氧基、甲硫基、乙硫基、丙硫基、異丙硫基、丁硫基、異丁硫基、第2 丁硫基、第3 丁硫基、戊硫基、己硫基、環己硫基、庚硫基、辛硫基、壬硫基、癸硫基、月桂硫基、曱氧基苯基、乙氧基苯基、丙氧基笨基、異丙氧基苯基、丁氧基苯基、異丁氧基苯基、第2 丁氧基苯基、第3 丁氧基苯基、戊氧基苯基、己氧基苯基、 ® 環己氧基苯基、庚氧基苯基、辛氧基苯基、2-乙基己氧基苯基、壬氧基苯基、癸氧基苯基、3, 7-二甲基辛氧基苯基、月桂氧基苯基、曱基苯基、乙基苯基、二甲基苯基、丙基苯基、均三甲苯基（mesityl)、甲基乙基苯基、異丙基苯基、丁基苯基、異丁基苯基、第3 丁基苯基、戊基苯基、異戊基苯基、己基苯基、庚基苯基、辛基苯基、壬基苯基、癸基苯基、十二烷基苯基、甲基胺基、二曱基胺基、乙基胺 φ 基、二乙基胺基、丙基胺基、二丙基胺基、異丙基胺基、二異丙基胺基、丁基胺基、異丁基胺基、第2 丁基胺基、第3 丁基胺基、戊基胺基、己基胺基、環己基胺基、庚基胺基、辛基胺基、2-乙基己基胺基、壬基胺基、癸基胺基、 3, 7-二曱基辛基胺基、月桂基胺基、環戊基胺基、二環戊基胺基、環己基胺基、二環己基胺基、二（三氟甲基）胺基、苯基胺基、二苯基胺基、至C12烷氧基苯基）胺基、二（G 至C!2烷氧基苯基）胺基、二（匕至（：12烷基苯基）胺基、1-萘基胺基、2-萘基胺基、五氟苯基胺基、咐*啶基胺基、噠嗪 133 323545 201228842 (pyridazinyl)基胺基、嘧啶基胺基、吡嗪（pyrazinyl)基胺基、三嗪（triazinyl)基胺基、（苯基-0至Ci2烷基）胺基、 (匕至Cu烷氧基苯基-匕至Cl2烷基）胺基、（〇至C12烷基苯基-(^至Ck烷基）胺基、二（〇至C12烷氧基苯基-0至〇2烷基）胺基、二至Ck烷基苯基-匕至C12烷基）胺基、卜萘基-Cl至Cl2烷基胺基、2-萘基-Cl至Cl2烷基胺基、三曱基梦基、二乙基碎基、二丙基碎基、三異丙基梦基、異丙基二甲基矽基、異丙基二乙基矽基、第3 丁基二甲基矽基、 ® 戊基二甲基矽基、己基二甲基矽基、庚基二曱基矽基、辛基二曱基矽基、2-乙基己基二曱基矽基、壬基二曱基石夕基、癸基二甲基石夕基、3, 7-二甲基辛基二甲基石夕基、月桂基二甲基矽基、（苯基-Ci至Cu烷基）矽基、至C,2烧氧基笨基-Cl至Cl2烧基）石夕基、（Cl至Cl2烧基苯基-Cl至Cl2烧基）矽基、α-萘基-匕至clz烷基）矽基、（2-萘基-(^至Cl2垸基）矽基、（苯基-Cl至Cl2烷基）二甲基矽基、三苯基矽基、三（對 Φ -二甲苯基）矽基、三苯甲基矽基、二笨基曱基矽基、第3 丁基二苯基梦基、二甲基苯基石夕基、嚷吩基（thienyi)、g 至Ci2烷基噻吩基、吡洛基、呋喃基、吡啶基、（^至ci2燒基吡啶基、噠嗪基、嘧啶基、吡嗪基、三嗪基、吡咯烷基、哌啶基、喹啉基、異喹啉基、羥基、巯基、氟原子、氣原子、溴原子及碘原子。於末端的構造單元存在複數個的情況，該些可為相同，亦可為相異。一離子性聚合物的特性一關於本實施態樣的離子性聚合物，較理想為共軛化人 323545 134 201228842 物。於本說明書，所謂「共軛化合物物的主鏈巾’存在彡重鍵結（例如雙姆子性聚合氧原子等具有的非共用電子對夾著i個單=及於離子性聚合物為共軛化合物的情連之Q域。子傳輸性的觀點， 4 /、軛化合物的電以{(多重鍵結或非共用電子對夾著丨域所含的线上的原子數）/(_上的1早鍵相連的區所計算的比為50%以上較理想，6〇%以上原子數）}χΐ〇〇% 更加理想，80%以上更加理想，90%以上更力理心、，7〇%以上關於本實施態樣的離子性聚合物 σ進—步理想。合物’更理想為共輛高分子化合物。於t理想為高分子化分子化合物」，係指聚苯乙埽換算的數平=書i所謂「高以上之化合物。於本說明書，所謂「子量為Ιχίο3 高分子化合物」，係指離子性聚合物聚合物為共軛子化合物。 °物為料化合物且為高分從離子性聚合物的塗佈成膜性的觀點的聚苯乙烯換算之數平均分子量為 γ 性聚合物咖…更理想，至⑽較理想， lxio7更加進一步理想。從離子性二理心’ 5xl〇3至笨乙稀換算之重量平均分子二物至的：觀點’聚 ΐχΐ〇3^ΐχΐο^,ι^，ιχ10^5χ1〇6^σίΐ^〇^^ 聚合物的溶解性之觀點，聚苯乙_算ς' =子性為_3至5Χ105較理想，1χ1〇3 勺分子量〇νι n3 ® , aXJG 更理想，Ιχϊ Γ)3 Ζί 更加理想。離子性聚合物的聚苯乙職算之數平^ 323545 135 A ^8842 子量及重息、可求得。重平均分子量，例如使用凝膠滲透層析法（GPC) 讀離子性聚合物的純度之觀點’除了末端構造單元之聚合物所含的全部構造單元的數目（亦即’聚合度) A从上？(1 以ΊΓ宙以下較理想’ 1以上10以下更理想’ 1以上5 更加理想。離子從離子性聚合物的電子接受性及電洞接受性之觀點’ 4性聚合物的最低未佔有分子軌道（LUMO)的軌道能量為以上-2. 〇ev以下較理想，_4. 5eV以上-2. 〇eV以下更理想。從同樣的觀點，離子性聚舍物的最高佔有分子軌 (HOMO)的執道能量為以上一3· 〇ev以下較理想， 5. 5eV以上-3. 〇ev以下更理想。俱是，HOMO的執道能量匕LUM0的軌道能量低。離子性聚合物的最高佔有分子軌道 (HOMO)的軌道能量’係藉由測定離子性聚合物的離子化電位’所得的離子化電位作為該軌道能量而求得。離子性聚合物的最低未佔有分子軌道（LUM〇)的軌道能量，係求出 HOMO與L_的能量差’該能量差的值與上述測定的離子 $電位的和作為LUM〇軌道的能量而求得。離子化電位的測定係使用光電子分光裝置。而且，HOMO與UIM0的能量差係使用兔外光•可見光·近紅外線分光光度計，測定離子性聚合物的吸收光譜，由該吸收末端求得。尸路Γ於本實施態樣的聚合物（離子性聚合物）使用作為電 =光4的情況，實質上為非發雜較書’所謂「聚合物實質上為非發光性」，係如以下的 323545 136 201228842, propyl, isomethoxy, ethoxy, propoxy, 'butyl, butyl, pentyl, with pentenyl, decyl, decyl, lauryl, isopropoxy, butoxy , isobutoxy, 323545 132 201228842 2nd butoxy, 3, butoxy, pentyloxy, hexyloxy, cyclohexyloxy, heptyloxy, octyloxy, 2-ethylhexyloxy , decyloxy, decyloxy, 3,7__didecyloctyloxy, lauryloxy, methylthio, ethylthio, propylthio, isopropylthio, butylthio, isobutylthio, 2 butylthio, 3 butylthio, pentylthio, hexylthio, cyclohexylthio, heptylthio, octylthio, sulfonylthio, sulfonylthio, lauric thio, decyloxyphenyl, Ethoxyphenyl, propoxyphenyl, isopropoxyphenyl, butoxyphenyl, isobutoxyphenyl, 2, butoxyphenyl, 3, butoxyphenyl, pentyloxy Phenyl, hexyloxyphenyl, ® cyclohexyloxyphenyl, heptyloxyphenyl, octyloxyphenyl, 2-ethylhexyloxyphenyl, nonyloxyphenyl, nonyloxybenzene , 3, 7-dimethyloctyloxyphenyl, lauryloxyphenyl, nonylphenyl, ethyl Base, dimethylphenyl, propylphenyl, mesityl, methylethylphenyl, isopropylphenyl, butylphenyl, isobutylphenyl, butylbenzene , pentylphenyl, isopentylphenyl, hexylphenyl, heptylphenyl, octylphenyl, nonylphenyl, nonylphenyl, dodecylphenyl, methylamino, two Mercaptoamine, ethylamine φ, diethylamino, propylamino, dipropylamino, isopropylamino, diisopropylamino, butylamino, isobutylamine Base, 2, butylamino, 3, butylamino, pentylamino, hexylamino, cyclohexylamino, heptylamino, octylamino, 2-ethylhexylamino, fluorenyl Amino, mercaptoamine, 3,7-didecyloctylamino, laurylamine, cyclopentylamino, dicyclopentylamino, cyclohexylamino, dicyclohexylamino, di (trifluoromethyl)amino, phenylamino, diphenylamino, to C12 alkoxyphenyl)amine, bis(G to C!2 alkoxyphenyl)amine, bis(匕To (:12 alkylphenyl)amino, 1-naphthylamino, 2-naphthylamino, pentafluorophenyl Base, hydrazinylamino group, pyridazine 133 323545 201228842 (pyridazinyl) arylamino group, pyrimidinyl group, pyrazinyl group amino group, triazine (triazinyl) group, (phenyl-0 to Ci2 alkyl)amino group, (匕 to Cu alkoxyphenyl-anthracene to Cl2 alkyl)amino group, (〇 to C12 alkylphenyl-(^ to Ck alkyl)amino group, di(〇 to C12) Alkoxyphenyl-0 to oxime 2 alkyl)amino, dimethyl-Ck alkylphenyl-anthracene to C12 alkyl)amino, naphthyl-Cl to Cl2 alkylamino, 2-naphthyl-Cl to Cl2 alkylamino, tridecylmethyl, diethyl, dipropyl, triisopropyl, isopropyldimethylmethyl, isopropyldiethyl fluorenyl, 3 butyl dimethyl fluorenyl, ® pentyl dimethyl fluorenyl, hexyl dimethyl fluorenyl, heptyl dimethyl fluorenyl, octyl decyl fluorenyl, 2-ethylhexyl fluorenyl fluorenyl Base, fluorenyl fluorenyl fluorenyl, fluorenyl dimethyl sylylene, 3, 7-dimethyloctyl dimethyl sylylene, lauryl dimethyl fluorenyl, (phenyl-Ci to Cu Alkyl) fluorenyl, to C, 2 alkoxy-phenyl-Cl to Cl2 alkyl), Shiki, (Cl to Cl2 alkyl) Cl to Cl2 alkyl) fluorenyl, α-naphthyl-anthracene to clz alkyl) fluorenyl, (2-naphthyl-(^ to Cl2 fluorenyl) fluorenyl, (phenyl-Cl to Cl2 alkyl) Methyl fluorenyl, triphenyl fluorenyl, tris(p-Φ-xylyl) fluorenyl, trityl fluorenyl, diphenyl fluorenyl decyl, butyl butyl diphenyl amide Phenyl fluorenyl, thienyi, g to Ci2 alkylthiophenyl, pyrrolyl, furyl, pyridyl, (^ to ci2 pyridyl pyridyl, pyridazinyl, pyrimidinyl, pyrazinyl And a triazinyl group, a pyrrolidinyl group, a piperidinyl group, a quinolyl group, an isoquinolyl group, a hydroxyl group, a fluorenyl group, a fluorine atom, a gas atom, a bromine atom, and an iodine atom. There are a plurality of structural units at the ends, which may be the same or different. Characteristics of the monoionic polymer - The ionic polymer of the present embodiment is preferably a conjugated human 323545 134 201228842. In the present specification, the "main chain towel of a conjugated compound" has a helium-heavy bond (for example, a non-shared electron pair having a diatom-polymerized oxygen atom or the like has a single pair = and an ionic polymer is common. The Q-domain of the conjugated compound. The sub-transportability point of view, 4 /, the yoke compound's electricity is {(multiple bond or non-shared electron pair sandwiches the number of atoms on the line contained in the 丨 domain) / (_ The ratio calculated by the area where the 1 early bond is connected is more than 50%, and the number of atoms above 6〇%)}χΐ〇〇% is more ideal, more than 80% is more ideal, more than 90% is more prudent, 7〇 % or more of the ionic polymer of the present embodiment is ideal for the σ-step-precision. The composition is more preferably a total of a polymer compound. The ideal polymer compound at t is a polyphenyl hydrazine-converted number. Ping = book i "higher compound. In this specification, the "sub-quantity is 高分子ίο3 polymer compound" means that the ionic polymer polymer is a conjugated compound. The substance is a compound and is a high score. Polystyrene exchange from the viewpoint of coating film forming property of ionic polymer The average molecular weight is γ polymer coffee... more ideal, to (10) ideal, lxio7 is even more ideal. From the ionic two core '5xl〇3 to the stupid ethylene equivalent weight average molecular two to: view'聚ΐχΐ〇3^ΐχΐο^, ι^, ιχ10^5χ1〇6^σίΐ^〇^^ The viewpoint of the solubility of the polymer, polystyrene _ ς = ' = sub-sex is _3 to 5 Χ 105 is ideal, 1 χ 1 〇 3 scoops of molecular weight 〇νι n3 ® , aXJG is more ideal, Ιχϊ Γ)3 Ζί is more ideal. The number of polystyrene occupants of ionic polymers is flat 323545 135 A ^8842 Sub-quantity and weight can be obtained. The weight average molecular weight, for example, the viewpoint of using gel permeation chromatography (GPC) to read the purity of the ionic polymer 'except for the number of all structural units (ie, 'polymerization degree) A contained in the polymer of the terminal building unit ? (1) It is more desirable to be less than 1 or more than 10 or less. 1 or more is more desirable. From the viewpoint of electron acceptability and hole acceptability of ionic polymers, the lowest unoccupied molecular orbital of 4-polymer The orbital energy of (LUMO) is above -2. 〇ev is ideal, _4. 5eV or more - 2. 〇eV or less is more desirable. From the same point of view, the highest occupied molecular orbital (HOMO) of ionic aggregates The energy of the channel is ideal for the above 3·〇ev, 5. 5eV or more-3. The following is more ideal for 〇ev. The HOO's orbital energy 匕LUM0 has low orbital energy. The highest occupied molecular orbital of ionic polymer The orbital energy of (HOMO) is obtained by measuring the ionization potential obtained by measuring the ionization potential of the ionic polymer as the orbital energy. The lowest unoccupied molecular orbital (LUM〇) orbital energy of the ionic polymer The energy difference between HOMO and L_ is obtained. The sum of the value of the energy difference and the measured ion potential is determined as the energy of the LUM〇 orbit. The ionization potential is measured by using a photoelectron spectroscope. With UIM0 The difference is obtained by using a rabbit external light/visible light/near-infrared spectrophotometer to measure the absorption spectrum of the ionic polymer, and the absorption end is obtained from the absorption end. The polymer (ionic polymer) used in the present embodiment is used as a difference. In the case of electricity = light 4, it is essentially a non-exhaustive book "the so-called "polymer is substantially non-luminescent", as follows 323545 136 201228842

首先’製作具有包含聚合物的層之電場發光元件A ^製作不具有包含聚合物的層之電場發光元件2。只有在電場發光元件A具有包含聚合物的層以及電場發光元件2不具有包含聚合物的層之點，電場發光元件A與電場發光元件2 不同。然後’於電場發光元件A以及電場發光元件2，施加10V的順向電壓，測定發光光譜。對電場發光元件2所得的發光光譜’求得具有最大波峰之波長λ。以波長又之發光強度為1 ’亦規格化（normalize)電場發光元件2所得的發光光譜’對波長積分’計算規格化發光量S。。另一方面以波長λ之發光強度為1 ’亦規格化（normalize)電場發光元件A所得的發光光譜，對波長積分，計算規格化發光置S。（s-s〇)/s〇xl〇〇%所計算的值為30%以下的情況，亦即與不具有包含聚合物的層之電場發光元件2之規格化發光量比較’具有包含聚合物的層之電場發光元件A之規格化發光量的增加成分為30%以下時，所使用的聚合物實質上為非發光性者。（S-S〇)/S〇xl00%所計算的值為 15%以下較理想，10%以下更理想。作為包含式（1)所示的基及式（3)所示的基之離子性聚 &物可列舉只由式（23)所示的基所構成的離子性聚合 ^自式（23)所示的基以及從式至5〇、59、60、77、 80 ' 91 ' Q9 > nc τ» ^ w 96及101至110所示的基除去2個氫原子之基所成群的1種以上的基所構成的離子性聚合物、只由式 (24)所不的基所構成的離子性聚合物、選自式（24)所示的基以及從 45 至 5〇、59、60、77、80、9卜 92、96 及 101 137 323545 201228842 至110所示的基除去2個氫原子之基基所構成的離子性聚合物、只由式的=士的 .6〇、77、80、91、92、96及1〇1至=式45至5〇、 2個氫原子之基所成群的丨種 ^的基除去入物、口如、町暴所構成的離子性聚 ° '、式（29)所不的基所構成的離子性聚人物. 式⑽所示的基以及從式45至5()、59、6 °、' 犯、96及1〇1至11〇所示的基除去的1種以上的基所構成的離子性聚合物3 =成群的基所構成的離子性聚合物、選自式(3〇);=(其〇)所示式 45 至 50、59、60、77、80、91、92 I ! 土以及從所示的基除去2個氮原子之基所成鮮^種以上成的離子性聚合物。上的基所構人/ί包ί式⑴所示的基及式(3)所示的基之離子性聚；° 2 /」刀I又之式所示的高分子化合物，如一例為P莫耳%，右側的構造單元之比例為⑽_=二之:First, an electroluminescent element A having a layer containing a polymer was fabricated to produce an electroluminescent element 2 having no layer containing a polymer. The electric field light-emitting element A is different from the electric field light-emitting element 2 only in the case where the electric field light-emitting element A has a layer containing a polymer and the electric field light-emitting element 2 does not have a layer containing a polymer. Then, a forward voltage of 10 V was applied to the electric field light-emitting element A and the electric field light-emitting element 2, and the emission spectrum was measured. The wavelength λ having the largest peak is obtained for the luminescence spectrum obtained by the electric field light-emitting element 2. The normalized luminescence amount S is calculated by normalizing the luminescence spectrum 'to the wavelength integral' obtained by the electric field light-emitting element 2 with the wavelength of the luminescence intensity being 1 '. . On the other hand, the luminescence spectrum obtained by the electric field light-emitting element A is normalized by the light-emitting intensity of the wavelength λ of 1 ', and the wavelength is integrated to calculate the normalized illuminating S. (ss〇) / s 〇 xl 〇〇 % The calculated value is 30% or less, that is, compared with the normalized luminescence amount of the electric field light-emitting element 2 having no polymer-containing layer 'having a layer containing a polymer When the component of the normalized luminescence amount of the electric field light-emitting element A is 30% or less, the polymer to be used is substantially non-luminescent. The value calculated by (S-S〇)/S〇xl00% is preferably 15% or less, and more preferably 10% or less. Examples of the ionic poly-amplifier containing the group represented by the formula (1) and the group represented by the formula (3) include an ionic polymerization method consisting of only the group represented by the formula (23). The group shown and the group from the formula to 5〇, 59, 60, 77, 80 '91 'Q9 > nc τ» ^ w 96 and 101 to 110 are grouped by a group of two hydrogen atoms. An ionic polymer composed of the above various groups, an ionic polymer composed only of a group not represented by the formula (24), a group selected from the formula (24), and from 45 to 5, 59, 60 , 77, 80, 9, 92, 96, and 101 137 323545 201228842 to 110, an ionic polymer composed of a base from which two hydrogen atoms are removed, only by the formula: 6.〇, 77, 80, 91, 92, 96, and 1〇1 to = 45 to 5〇, a group of two hydrogen atoms, a group of enthalpy species, an ionic group formed by the mouth, and a typhoon. The ionic poly-character composed of the base of the formula (29). The base represented by the formula (10) and the formulas 45 to 5 (), 59, 6 °, 'criminal, 96 and 1 to 1 to 11 Ionic polymer composed of one or more kinds of groups removed by the group shown in the group 3 = group An ionic polymer composed of a group selected from the group consisting of formula (3〇); = (〇), formula 45 to 50, 59, 60, 77, 80, 91, 92 I and soil The ionic polymer formed by the above two kinds of nitrogen atoms is formed. The ionic group of the formula (3) and the ionic group of the group represented by the formula (3); the polymer compound represented by the formula of the formula 2, such as P Moer%, the ratio of the structural unit on the right is (10)_= two:

些構造早4不規賴列。以下式中，η表示聚合度。X 201228842These structures are unresolved early. In the following formula, η represents the degree of polymerization. X 201228842

HsqOHjCHjC^aHsqOHjCHjC^a

00〇γΜ+ CHzCH20)3a% M = U,Na.K Cs00〇γΜ+ CHzCH20)3a% M = U,Na.K Cs

+M*OOC-+M*OOC-

HjQOHjCHjQja ^ " OiCHjCHjOJsCH, M^HNa.K, CsHjQOHjCHjQja ^ " OiCHjCHjOJsCH, M^HNa.K, Cs

/-<»7 οοσΜ* [C^CHaOJjCH, M = Li,Na.K.Cs (p:獅-pmol%)/-<»7 οοσΜ* [C^CHaOJjCH, M = Li, Na.K.Cs (p: lion-pmol%)

ν〇0〇γ^< >^γ〇0〇·Μ+〇0〇γ〇<>^γ〇0〇·Μ+

HjCiOHjCHjQjCT^ NsnD(CH2CH2p)4CH3 M = U.Na,K.Cs (p: ίΟΟ-p mol%)HjCiOHjCHjQjCT^ NsnD(CH2CH2p)4CH3 M = U.Na, K.Cs (p: ΟΟ -p mol%)

-〇οσΜ+ H3q〇H2CH2C)3a^ ^OiCHjCHiOJsCH M = Ll NatK. Cs (p: ίΟΟ-pmol%)-〇οσΜ+ H3q〇H2CH2C)3a^ ^OiCHjCHiOJsCH M = Ll NatK. Cs (p: ΟΟ -pmol%)

Vooc HaQOI^CHaQaOVooc HaQOI^CHaQaO

CX)〇-M+ (CHaCHaO}3CH3 M=U1Na.K,Cs ^7CX)〇-M+ (CHaCHaO}3CH3 M=U1Na.K, Cs ^7

Vooc Η30(Ο^ΟΗ2〇3Vooc Η30(Ο^ΟΗ2〇3

ΟΟΟΊΛ*· (CH2CH2〇)3CH3 M = U.Na, K,CsΟΟΟΊΛ*· (CH2CH2〇)3CH3 M = U.Na, K, Cs

♦ΜΌ丨 HjQOHjCHzC)^♦ΜΌ丨 HjQOHjCHzC)^

ft οοσΜ+ [CH2CH20),CH, M=Li.Na.K.Cs 139 323545 201228842Ft οοσΜ+ [CH2CH20),CH, M=Li.Na.K.Cs 139 323545 201228842

ip: 10Q~p mol%)Ip: 10Q~p mol%)

H3q〇H2CH2C)30<H3q〇H2CH2C)30<

l~CO)-οοσΜ* n 0Η2εΗ20),0Η, M = U,Na.K.Cs (p: 700-p mol%)l~CO)-οοσΜ* n 0Η2εΗ20),0Η, M = U,Na.K.Cs (p: 700-p mol%)

(p: 100-p mol%)(p: 100-p mol%)

(p: 700-p mol%)(p: 700-p mol%)

140 323545 201228842140 323545 201228842

(p: 100 - p md%)(p: 100 - p md%)

(p： ΪΟΟ-p mol%)(p: ΪΟΟ-p mol%)

(p:100-pwo\%)(p:100-pwo\%)

(pifOO-pmol%)(pifOO-pmol%)

*MOOCv H3q〇H2CH2C)3〇*MOOCv H3q〇H2CH2C)3〇

3(CH2CH2〇)jCrt M = LltNa,K(Cs (ρ:100~ρπκ>\%) M = UNa,K,Cs3(CH2CH2〇)jCrt M = LltNa,K(Cs (ρ:100~ρπκ>\%) M = UNa,K,Cs

(p: iOO-pmoi%) M = Li, Na.K.Cs 141 323545 201228842(p: iOO-pmoi%) M = Li, Na.K.Cs 141 323545 201228842

(p: 100 -pmo*%)(p: 100 -pmo*%)

142 323545 201228842142 323545 201228842

*μό3； H3q〇H2CH2Q3Q*μό3; H3q〇H2CH2Q3Q

ΓΜ* CHjCHp^CHj M = U,Na.KCsΓΜ* CHjCHp^CHj M = U,Na.KCs

V-ysCb-M4· HjqOHaCHjQaC»^ ^H〇(CH2CH20)3CHj M=Li,Na, K Cs +MO3: H3q〇HjCH2C)；V-ysCb-M4· HjqOHaCHjQaC»^ ^H〇(CH2CH20)3CHj M=Li,Na, K Cs +MO3: H3q〇HjCH2C);

/母 ΓΜ" CHaCHjO^CHj/母ΓΜ" CHaCHjO^CHj

M = Li.Na,K. Cs (p:100-pn\o\°/〇) ♦MO3SY^ ^ysofM夺 H3q〇H2CH2Q,Cr^ ^n〇(CH2CH20)3CH3 M=Li. Na.KCsM = Li.Na, K. Cs (p:100-pn\o\°/〇) ♦MO3SY^ ^ysofM HH3q〇H2CH2Q,Cr^ ^n〇(CH2CH20)3CH3 M=Li. Na.KCs

H3QOH^2C)3〇Xs^ N^q〇H2CH20)3CHs M = U Na.KCs (p: 100~pmdi%)H3QOH^2C)3〇Xs^ N^q〇H2CH20)3CHs M = U Na.KCs (p: 100~pmdi%)

H3C(OH,CH2q3〇r^ ^n〇(CH2CH20)3CH5 M=Li, Na.K.Cs (p ： fOO-p mol%)H3C(OH,CH2q3〇r^^n〇(CH2CH20)3CH5 M=Li, Na.K.Cs (p : fOO-p mol%)

*M~Q HsQOHaCHsC)^*M~Q HsQOHaCHsC)^

M = Li, Na.KCsM = Li, Na.KCs

fM* CH2CH20)3Cli 143 323545 201228842fM* CH2CH20)3Cli 143 323545 201228842

Vo3:Vo3:

CHjCHjO^CH, M = U.Na,K,Cs {p:^00-pmol%>CHjCHjO^CH, M = U.Na, K, Cs {p:^00-pmol%>

&>: 700-pmo!%)&>: 700-pmo!%)

(p: 100-pmdi%)(p: 100-pmdi%)

144 323545 201228842144 323545 201228842

(p: ΙΟΟ-pmd%)(p: ΙΟΟ-pmd%)

(p: 1CO-pmo\%)(p: 1CO-pmo\%)

{p: 100-pracA%){p: 100-pracA%)

{p: 100-prnci%){p: 100-prnci%)

(p: 100 -p mol%)(p: 100 -p mol%)

(p: 100-pmol%) Na.K.Cs 145 323545 201228842(p: 100-pmol%) Na.K.Cs 145 323545 201228842

(p: ^OE7-pmd%)(p: ^OE7-pmd%)

.(p: fOO-pmd%).(p: fOO-pmd%)

(式中，p表示15至100的數。）作為包含式（2)所示的基及式（3)所示的基之離子性聚合物，可列舉只由式（26)所示的基所構成的離子性聚合物、選自式（26)所示的基以及從式45至50、59、60、77、 80、91、92、96及101至110所示的基除去2個氫原子之基所成群的1種以上的基所構成的離子性聚合物、只由式 (27)所示的基所構成的離子性聚合物、選自式（27)所示的 146 323545 201228842 基以及從式 45 至 50、59、60、77、80、91、92、96 及 101 至110所示的基除去2個氩原子之基所成群的1種以上的基所構成的離子性聚合物、只由式（28)所示的基所構成的離子性聚合物、選自式（28)所示的基以及從式45至50、 59、60、77、80、91、92、96 及 101 至 110 所示的基除去 2個氫原子之基所成群的1種以上的基所構成的離子性聚合物、只由式（31)所示的基所構成的離子性聚合物、選自式（31)所示的基以及從式45至50、59、60、77、80、91、 ® 92、96及101至110所示的基除去2個氫原子之基所成群的1種以上的基所構成的離子性聚合物、只由式（32)所示的基所構成的離子性聚合物、選自式（32)所示的基以及從式 45 至 50、59、60、77、80、91、92、96 及 101 至 110 所示的基除去2個氳原子之基所成群的1種以上的基所構成的離子性聚合物。作為包含式（2)所示的基及式（3)所示的基之離子性聚 φ 合物，可列舉以下的高分子化合物。2種構造單元以斜線「/」分段之式所示的高分子化合物，左侧的構造單元之比例為P莫耳％，右側的構造單元之比例為（100-P)莫耳％，該些構造單元為不規則排列。以下式中，η表示聚合度。 147 323545 201228842 ^{HaCH^iHsCfeN； H3C(OH3CH2C)3i(In the formula, p represents a number of 15 to 100.) The ionic polymer containing a group represented by the formula (2) and a group represented by the formula (3) includes a group represented by the formula (26) only. The ionic polymer, the group selected from the formula (26), and the hydrogen represented by the formulas 45 to 50, 59, 60, 77, 80, 91, 92, 96, and 101 to 110 are removed. An ionic polymer composed of one or more groups of a group of atoms, an ionic polymer composed only of a group represented by the formula (27), and a 146 323545 201228842 selected from the formula (27) Ionicity consisting of a group and one or more groups of groups in which groups of two argon atoms are removed from groups represented by Formulas 45 to 50, 59, 60, 77, 80, 91, 92, 96, and 101 to 110 a polymer, an ionic polymer composed only of the group represented by the formula (28), a group selected from the formula (28), and a formula 45 to 50, 59, 60, 77, 80, 91, 92, An ionic polymer composed of one or more groups in which a group of two hydrogen atoms is removed by a group of 96 and 101 to 110, and an ionic polymer composed only of a group represented by the formula (31) , selected from the formula (31) And a group consisting of one or more groups in which groups of two hydrogen atoms are removed from groups represented by Formulas 45 to 50, 59, 60, 77, 80, 91, ® 92, 96, and 101 to 110 An ionic polymer, an ionic polymer composed only of a group represented by the formula (32), a group selected from the formula (32), and a formula 45 to 50, 59, 60, 77, 80, 91, An ionic polymer composed of one or more groups in which a group of two ruthenium atoms is grouped by a group of 92, 96 and 101 to 110 is removed. The ionic cation compound containing the group represented by the formula (2) and the group represented by the formula (3) includes the following polymer compounds. Two kinds of structural units are polymer compounds represented by a slash "/" segment, the ratio of the structural unit on the left side is P mol%, and the ratio of the structural unit on the right side is (100-P) mol%. These structural units are arranged irregularly. In the following formula, η represents the degree of polymerization. 147 323545 201228842 ^{HaCH^iHsCfeN; H3C(OH3CH2C)3i

:N(CH3)2CH2CH3^X· (CHzCHsOiaCHa -X^HaCHzCtHaCfel HaCiOHaCHaC)^:N(CH3)2CH2CH3^X· (CHzCHsOiaCHa -X^HaCHzCtHaCfel HaCiOHaCHaC)^

^{CH2^OH2CH^*X· CHgCHjOhCHa^{CH2^OH2CH^*X· CHgCHjOhCHa

X = F· Cl. Br· I· BPh( CF3SQ3· CH3COOX = F· Cl. Br· I· BPh ( CF3SQ3· CH3COO

X = F, Cl. Br. I. BPh4, CF3SO3. CH3COO ^r{H3CH2C(HaC)2N； H3C(OHaCH2C)；X = F, Cl. Br. I. BPh4, CF3SO3. CH3COO ^r{H3CH2C(HaC)2N; H3C(OHaCH2C);

/-〇v NiCHaJaCHzCHgJ^· 丨(CH2CH2〇bCH3 _X*{H3CH2C(H3C)2N: H3C(〇H2CH2C>3〇,/-〇v NiCHaJaCHzCHgJ^· 丨(CH2CH2〇bCH3 _X*{H3CH2C(H3C)2N: H3C(〇H2CH2C>3〇,

(CH^CHaCH^X- i(CH2CH20)3CH3(CH^CHaCH^X-i(CH2CH20)3CH3

X = F, CL Br. I, BPh4. CF3S〇3, CH3COO (p: 700-pmoI%)X = F, CL Br. I, BPh4. CF3S〇3, CH3COO (p: 700-pmoI%)

X = Ff a. Br. \t BPh4, CF3SO3. CH3COOX = Ff a. Br. \t BPh4, CF3SO3. CH3COO

/_〇)7 ^{Η3ΟΗ2〇(Η3〇)2Ν^γ^ >^ν{Ν(ΟΗ3)2〇Η2〇Η3ΓΚ· H3C(OH2CH2C)3Cr^ <D(CH2CH2〇)3CH3 X = F. CL Br. I. BPh4, CF3SO3. CH3COO (p: 100-p mol%) X*{H3CH2C(H3C)2l Η30(〇Η2〇Η2〇；/_〇)7 ^{Η3ΟΗ2〇(Η3〇)2Ν^γ^ >^ν{Ν(ΟΗ3)2〇Η2〇Η3ΓΚ· H3C(OH2CH2C)3Cr^ <D(CH2CH2〇)3CH3 X = F. CL Br. I. BPh4, CF3SO3. CH3COO (p: 100-p mol%) X*{H3CH2C(H3C)2l Η30(〇Η2〇Η2〇;

:N(CH3}2〇H2CH3}*X· ；CH2CH2〇)3CH3 -Of:N(CH3}2〇H2CH3}*X· ;CH2CH2〇)3CH3 -Of

X = F. CL Br, I, BPh4, CF3S03l CH3COOX = F. CL Br, I, BPh4, CF3S03l CH3COO

X+{H3CH2C(H3C)2NW^ rV{N(CH3j2CH2CH3>+X· HaCiOHzCHjChCT^ ^b(CH2CH2〇)3CH3 X = F, a. Br, I, BPh4( CF3SO3, CH3COO (p: ίΟΟ-p mol%) -Χ+{Η3〇Η2〇{Η3〇)2Ν} HaCiOHzCHaCb)X+{H3CH2C(H3C)2NW^rV{N(CH3j2CH2CH3>+X· HaCiOHzCHjChCT^^b(CH2CH2〇)3CH3 X = F, a. Br, I, BPh4( CF3SO3, CH3COO (p: ΟΟ -p mol%) -Χ+{Η3〇Η2〇{Η3〇)2Ν} HaCiOHzCHaCb)

Ν(〇Η3)2〇Η2〇Η3}*Χ* l(CH2CH2〇)3CH3 X = F, a. Br, l( BPh4, CF3SO3. CH3C00Ν(〇Η3)2〇Η2〇Η3}*Χ* l(CH2CH2〇)3CH3 X = F, a. Br, l( BPh4, CF3SO3. CH3C00

^{H3CH2C<H3C)2NW^ >^V{N(CH3)2CH2CH3}*X· HgPiOHzCHaChOT^ C)(CH2CH2〇)iCH3 X = F· Cl. Br· I, BPN· CF35O3· CHaCOO (p： fOO-pmol%) X^iHsCHaCiHaCfel HaCtOH^HzChi^{H3CH2C<H3C)2NW^ >^V{N(CH3)2CH2CH3}*X· HgPiOHzCHaChOT^ C)(CH2CH2〇)iCH3 X = F· Cl. Br· I, BPN· CF35O3· CHaCOO (p: fOO -pmol%) X^iHsCHaCiHaCfel HaCtOH^HzChi

NtCHa^HapHW (CHzCHzObCHaNtCHa^HapHW (CHzCHzObCHa

X = F, Cl. Br, I. BPh4, CF3SO3, CH3COO •^{HaCHjCtHaCbN： H3C(OH2CH2C)3lX = F, Cl. Br, I. BPh4, CF3SO3, CH3COO •^{HaCHjCtHaCbN: H3C(OH2CH2C)3l

H{CHz)fiHzCH^K (CH2CH2〇feCH3 •X+{H3CH2C(H3C)2N] H3C(OH2CH2C)3<H{CHz)fiHzCH^K (CH2CH2〇feCH3 •X+{H3CH2C(H3C)2N] H3C(OH2CH2C)3<

(CHjJjCMzCHaJ^X- ；CH2CH20)3CH3(CHjJjCMzCHaJ^X- ;CH2CH20)3CH3

X = F· Cl. Br. BPh4. CFaSOa» Cl I3COO (p: 100-p mol%)X = F· Cl. Br. BPh4. CFaSOa» Cl I3COO (p: 100-p mol%)

X = F. Cl. Br. I, ΘΡΚ4. CF3SO3. CH3COO 148 323545 201228842X = F. Cl. Br. I, ΘΡΚ 4. CF3SO3. CH3COO 148 323545 201228842

X^CHaCCHaCfeN] HaCtOHaCHjCfe XX^CHaCCHaCfeN] HaCtOHaCHjCfe X

丨(CHaJaC^CHaTX· ；CH2CH2〇)3CH3 ^{HjCHaCiHjOjN] HaCiOHjCHjC；丨(CHaJaC^CHaTX· ;CH2CH2〇)3CH3 ^{HjCHaCiHjOjN] HaCiOHjCHjC;

l(CH3)aCH2CHJ*X· t2〇hCH3 F, Cl. Βτ· I· BPh CF3SO3· CI^COO (p: fOO-p mol%)l(CH3)aCH2CHJ*X·t2〇hCH3 F, Cl. Βτ· I· BPh CF3SO3· CI^COO (p: fOO-p mol%)

X = F, CL Br, I, BPh4. CF3SO3· CH3COO ·5ΠΗ3ΟΗ2〇(Η3〇2Ν; H3C(OH2CH2C)3(X = F, CL Br, I, BPh4. CF3SO3· CH3COO ·5ΠΗ3ΟΗ2〇(Η3〇2Ν; H3C(OH2CH2C)3(

X = F. Cl. Br. I, BPti4, CF3S〇3, CH^CX) (p: TOO-p mol%)X = F. Cl. Br. I, BPti4, CF3S〇3, CH^CX) (p: TOO-p mol%)

；N(CH3)2CH2CH3}*X· ^{Η3〇Η2〇(Η3ϋ)2Μ)-ν^ r^HN(C>i3>2CH2CH3)+X' ；CH2CH2〇)3CH3 HaCiOH^CH^^Ci^ V>，-〇(CHiCH2〇)3CH3 X : F· a Br· I· BPtv CF3S03, CH3COO;N(CH3)2CH2CH3}*X·^{Η3〇Η2〇(Η3ϋ)2Μ)-ν^ r^HN(C>i3>2CH2CH3)+X' ;CH2CH2〇)3CH3 HaCiOH^CH^^Ci^ V&gt ;,-〇(CHiCH2〇)3CH3 X : F· a Br· I· BPtv CF3S03, CH3COO

^{H3CH2C(H3C)aNhY^i py-iNCCHaJaCHaCHg}^ HaCtOHaCHaOaCT^ ^CXCHzCHzObCHa X = F. a. Br. I, BPh4. CF3SO3. CH3COO (p: 100-p mol%) -X*{H3CH2C(H3C)a： HjCiOHzCHaOal^{H3CH2C(H3C)aNhY^i py-iNCCHaJaCHaCHg}^ HaCtOHaCHaOaCT^ ^CXCHzCHzObCHa X = F. a. Br. I, BPh4. CF3SO3. CH3COO (p: 100-p mol%) -X*{H3CH2C(H3C) a: HjCiOHzCHaOal

〇〇> ^(CHaJaCHaChiJ}^ CH^HaOaCHg〇〇> ^(CHaJaCHaChiJ}^ CH^HaOaCHg

ix〇i ·χ*{Η3ΟΗ20(Η3〇)2Ν>^Μ V^yiNfCHafcCHaCHaJ^X· HaCtOHaCHaC^CJ^ *3fCH2CH2〇)3CH3 X = Ft Cl. Br, I, BPIv，CF3S03, CH3COO (p: 100-pmot%)Ix〇i ·χ*{Η3ΟΗ20(Η3〇)2Ν>^ΜV^yiNfCHafcCHaCHaJ^X· HaCtOHaCHaC^CJ^ *3fCH2CH2〇)3CH3 X = Ft Cl. Br, I, BPIv, CF3S03, CH3COO (p: 100- Pmot%)

X * f=. Cl. Br, I. BRv, CF3S〇3. CH3COOX * f =. Cl. Br, I. BRv, CF3S〇3. CH3COO

X^CHzCtHaOjiNh^j py{N(CH3)2CH2CH3pC·X^CHzCtHaOjiNh^j py{N(CH3)2CH2CH3pC·

HaCtOHaCHaC^CJ^ ^OtCHjCHiOJaCHa X = F, Cl. Br· I, BPh4. CFaSQj. CH3COO (p: 100-pwd%) ^{HsCHzCiHjCbl Η3〇(〇Η2〇Η2〇：HaCtOHaCHaC^CJ^ ^OtCHjCHiOJaCHa X = F, Cl. Br· I, BPh4. CFaSQj. CH3COO (p: 100-pwd%) ^{HsCHzCiHjCbl Η3〇(〇Η2〇Η2〇:

丨(CHaJaCHzCHaTX· IC^CHjOJaC^丨(CHaJaCHzCHaTX· IC^CHjOJaC^

X = F. Cl· Βτ· I· BPh4· CF3SO3, CH3COOX = F. Cl· Βτ· I· BPh4· CF3SO3, CH3COO

(CH3)2CH2CH3)*X· ^{HaCHzCtHaCJzN i(CH2〇H20)3CH3 HaCtOHjCH^(CH3)2CH2CH3)*X· ^{HaCHzCtHaCJzN i(CH2〇H20)3CH3 HaCtOHjCH^

X+{H3CH2qH3C: H^OH^HjCW X = F. a. Br. I. BPh4, CF3SO3. CH3COO (p: 100 · p mol%)X+{H3CH2qH3C: H^OH^HjCW X = F. a. Br. I. BPh4, CF3SO3. CH3COO (p: 100 · p mol%)

[CHaCHzOfeCHa F. a. Br. I. BPtM. CF3S03i CH3COO OC〇} 149 323545 201228842 X^H^CHzCiHaCfeN] H3C(OH2CH2〇3i[CHaCHzOfeCHa F. a. Br. I. BPtM. CF3S03i CH3COO OC〇} 149 323545 201228842 X^H^CHzCiHaCfeN] H3C(OH2CH2〇3i

/-ί〇χ4 NtCHafeCHaCHd^ r ：CH2CH2〇)3CH3/-ί〇χ4 NtCHafeCHaCHd^ r :CH2CH2〇)3CH3

游 X = F· CL Br· l_ BRU. CF3S03· CH3COO (p： 100-p mol%)Tour X = F· CL Br· l_ BRU. CF3S03· CH3COO (p: 100-p mol%)

Χ*{Ηϊ〇Η20(Η3α)2Ν}-γ^\ f^HNlCHjJzCHaCHjJ'X· HjClOHjCHjOjCf^ ^OiCHjCHjOJjCHj X = F. a. Br, I. BPh4. CFaSQj. CH^OO •x^HaCHaCiHaC)； HaCiOHaCH^bO^Χ*{Ηϊ〇Η20(Η3α)2Ν}-γ^\ f^HNlCHjJzCHaCHjJ'X· HjClOHjCHjOjCf^ ^OiCHjCHjOJjCHj X = F. a. Br, I. BPh4. CFaSQj. CH^OO •x^HaCHaCiHaC); HaCiOHaCH^ bO^

(CHafcCHaCHaTX (CH2CH2〇hCH3 X^CHjCiHjCW H3C(OH2CH2C)3Cr(CHafcCHaCHaTX (CH2CH2〇hCH3 X^CHjCiHjCW H3C(OH2CH2C)3Cr

:〇13抑2〇13}+)«· ；CH2CH2〇hCH} •X^HaCHjAHaC^N} Η3〇(〇Η2〇Η2〇3Ι:〇13抑2〇13}+)«· ;CH2CH2〇hCH} •X^HaCHjAHaC^N} Η3〇(〇Η2〇Η2〇3Ι

丨{CHjjfeCHzayx* pHjCHaOfeCHj丨{CHjjfeCHzayx* pHjCHaOfeCHj

i(CH3)2CHiCHj}*X· i(CH2CH20)3CH3 X = F. a. Br. I, BPh4. CF3SO3. CH3COO (p: 100 - p mol%) I集 X = F. a. Br, I, BPh*. CF3SO3. CH3COO (p： fOO-pmol%)i(CH3)2CHiCHj}*X· i(CH2CH20)3CH3 X = F. a. Br. I, BPh4. CF3SO3. CH3COO (p: 100 - p mol%) I set X = F. a. Br, I, BPh*. CF3SO3. CH3COO (p: fOO-pmol%)

X = F, a. Br. I, BPh4. CF3SO3, CH3C<XJ -X*{H3CH2C(H3C)2l HsC(OH2CH2C)3IX = F, a. Br. I, BPh4. CF3SO3, CH3C<XJ-X*{H3CH2C(H3C)2l HsC(OH2CH2C)3I

X = F, a. Br, I, BPh*. CF3SO3. CH3COOX = F, a. Br, I, BPh*. CF3SO3. CH3COO

-X^CHa^HjCfeN}· HsCJOHzCHjCbCr^ £)(ΟΗ2〇Η2〇)3〇Η3 X = F. Cl. Br. I. BPh4. CF3SOj, CH3COO (p： 100 - p wd%) l(CH3)2CH2CH3}+X· -x^HjCH^HaOzN] HjCiOHzCH^hl-X^CHa^HjCfeN}· HsCJOHzCHjCbCr^ £)(ΟΗ2〇Η2〇)3〇Η3 X = F. Cl. Br. I. BPh4. CF3SOj, CH3COO (p: 100 - p wd%) l(CH3)2CH2CH3 }+X· -x^HjCH^HaOzN] HjCiOHzCH^hl

丨(CHaJzCH^HaTX* [CHjCHzOJaCHj丨(CHaJzCH^HaTX* [CHjCHzOJaCHj

X = F. Cl. Br. I. BPIV. CF3SO3. CH3COOX = F. Cl. Br. I. BPIV. CF3SO3. CH3COO

ΟΗ^ΗζΟΗ^χ· -X*{H,CHjC{HjC： CHjCHzOIijCHs HjCCOHjCHzCblΟΗ^ΗζΟΗ^χ· -X*{H,CHjC{HjC: CHjCHzOIijCHs HjCCOHjCHzCbl

•X*{H3CH2C(H3C)2l H3C(OH2CH2C)3 X « F, a Br, I, BPh4. CFjS〇3, CH3COO (p: 100-pmd%)• X*{H3CH2C(H3C)2l H3C(OH2CH2C)3 X « F, a Br, I, BPh4. CFjS〇3, CH3COO (p: 100-pmd%)

CgHi/^ 'CbHi? l(CH3feCH2CH3l*X·CgHi/^ 'CbHi? l(CH3feCH2CH3l*X·

X = Γ. a Br. I. BPHi. CF3S〇3, CHjCOO X^HjCHzCCHsCfeN} H3C(OH2CH2C)3〇rX = Γ. a Br. I. BPHi. CF3S〇3, CHjCOO X^HjCHzCCHsCfeN} H3C(OH2CH2C)3〇r

[NtCHjfeCHzCH^X- (CHjCH^hCHa 卿萍…烟[NtCHjfeCHzCH^X- (CHjCH^hCHa Qingping...smoke

X = F, Cl. Br. I, BPh4l CF3SO3. CH3COO (p: i(W-pmol%)X = F, Cl. Br. I, BPh4l CF3SO3. CH3COO (p: i (W-pmol%)

CeH1: [N(CH3JzCH2CH3TX. H3C(OH2CHjCh〇 u<CH2CH2〇hCH3CeH1: [N(CH3JzCH2CH3TX. H3C(OH2CHjCh〇 u<CH2CH2〇hCH3

X = F. Cl. 8τ· I. ΒΡΠφ CH3COO 150 323545 201228842 χ+(Η3〇Η2〇(Η3〇)2Ν>- HaC(OH2CH2C)3C)X = F. Cl. 8τ· I. ΒΡΠφ CH3COO 150 323545 201228842 χ+(Η3〇Η2〇(Η3〇)2Ν>- HaC(OH2CH2C)3C)

'{N(CH3)2CH2CH3>^C 〕(CH2CH2〇hCH3'{N(CH3)2CH2CH3>^C 〕(CH2CH2〇hCH3

Hia 'X+{H3CH2C(H3C)2N}- H3C<〇H2CH2C)；Hia 'X+{H3CH2C(H3C)2N}- H3C<〇H2CH2C);

X = F· Cl· Br· Ι· ΒΡ»μ· CFjjSC^ CH3COO (p： fOO-pmol%)X = F· Cl· Br· Ι· ΒΡ»μ· CFjjSC^ CH3COO (p: fOO-pmol%)

HN(CH3)2CH2CH3rX* i(CH2CHz〇)3CH3 X = F, Cl. Br，丨· BPiu* CFaSOs· CH3COOHN(CH3)2CH2CH3rX* i(CH2CHz〇)3CH3 X = F, Cl. Br, 丨·BPiu* CFaSOs· CH3COO

X*{H3CH2C(H3CfeN)X*{H3CH2C(H3CfeN)

{N(CHshCI X^CH^HaCh H3C(OH2CH2Cbd CHCHjCHjObCHs X = F. Cl. Br. L BPh4. CF3SO3. CH3COO (p: fOO-pmol%) H3C(〇HzCH2〇3Cr ^ G(CH2CH2〇)3CH3{N(CHshCI X^CH^HaCh H3C(OH2CH2Cbd CHCHjCHjObCHs X = F. Cl. Br. L BPh4. CF3SO3. CH3COO (p: fOO-pmol%) H3C(〇HzCH2〇3Cr ^ G(CH2CH2〇)3CH3

X » F. Cl. Br. I. BPfU. CF>S〇3. CH3COO ；N(CH3)aCH^Hal"X-X » F. Cl. Br. I. BPfU. CF>S〇3. CH3COO ;N(CH3)aCH^Hal"X-

HsC(OH2CH2C；HsC(OH2CH2C;

(CH2CH2〇)3CH3 X = F. Cl. Br, I, BPh4· CF3SO3. CH3COO •X，(H傳娜_ -_H_例. H3C(OH2CH2C)3Cf btCHjCHiObCHs X = F. Cl. Br. I, BPh4. CFsSO» CH3COO (p: fOO-pmol%)(CH2CH2〇)3CH3 X = F. Cl. Br, I, BPh4· CF3SO3. CH3COO •X,(H传娜_ -_H_例. H3C(OH2CH2C)3Cf btCHjCHiObCHs X = F. Cl. Br. I, BPh4 . CFsSO» CH3COO (p: fOO-pmol%)

X+{H3CH2C(H3CfeN: H3C(OH2CH2C)3Ci 〇(CH2CH2〇hCH3 X = F( Cl. Br, I, BPh4, CF3SO3. CH3COO (p: YOO-p mol%) ^ ^ •^(HaCHaCtHaOzN] '(CHahCHjCH^X·X+{H3CH2C(H3CfeN: H3C(OH2CH2C)3Ci 〇(CH2CH2〇hCH3 X = F(Cl. Br, I, BPh4, CF3SO3. CH3COO (p: YOO-p mol%) ^ ^ •^(HaCHaCtHaOzN] '(CHahCHjCH ^X·

HjC(OH2CH2C)：HjC(OH2CH2C):

(CHaJzCI '〇(CH2CH2〇)iCH；(CHaJzCI '〇(CH2CH2〇)iCH;

X = F, Cl. Br, I, BPIu. CF3S〇3· CH^COOX = F, Cl. Br, I, BPIu. CF3S〇3· CH^COO

(p: 700-pmoi%) (式中，p表示15至100的數。） _離子性聚合物的製造方法一然後，說明製造關於本實施態樣的離子性聚合物之方法。作為製造關於本實施態樣的離子性聚合物的適合方法’例如可列舉將下述一般式（36)所示的化合物作為原料之一’使其縮合聚合之方法。下述一般式（36)所示的化人物中’使用選自-Aa-為式（13)所示的構造單元之化合物、 323545 151 201228842 式（15)所示的構造單元之化合物、式（17)所示的構造單元之化合物及式（20)所示的構造單元之化合物所成群的至少 1種較理想。 Y4-Aa —Y5 (36) (式（36)中，Aa表示具有選自式（1)所示的基以及式（2)所示的基所成群的1種以上的基與式（3)所示的1種以上的基之構造單元，Y4及Y5分別獨立表示參與縮合聚合的基。）關於本實施態樣的離子性聚合物中，含有上述式（36) 中的-Aa-所示的構造單元以及-Aa-以外的其他構造單元之情況，使具有-Aa-以外的其他構造單元與2個參與縮合聚合的基之化合物，與式（36)所示的化合物一起縮合聚合。作為具有-Aa-以外的其他構造單元與2個參與縮合聚合的基之化合物，例如式（37)所示的化合物。藉由式（36) 所示的化合物與式（37)所示的化合物縮合聚合，可製造更具有-Ab-所示的構造單元之離子性聚合物。 Y6-Ab-Y7 (37) (式（37)中，Ab為一般式（33)所示的構造單元或一般式（35) 所示的構造單元，Y6及Y7分別獨立表示參與縮合聚合的基。）作為參與縮合聚合的基（Y4、Y5、Y6及γ7)，例如可列舉氫原子、iS原子、烧基續酸酷基、芳香基續酸S旨基、芳香基院基續酸醋基、棚酸酉旨殘基、疏曱基、鱗曱基、填酸酉旨曱基、單鹵化曱基、-b(oh)2、曱醯基、氰基及乙烯基 (vinylene)等0 152 323545 201228842 作為鹵原子，例如氟原子、氣原子、漠原子及蛾原子。作為烧基續酸s旨基，可例示甲烧續酸s旨基、乙燒續酸酯基及三氟曱烷磺酸酯基，作為芳香基磺酸酯基，可例示苯磺酸酯基及對-曱苯磺酸酯基。作為芳香基烧基續酸醋基，可例示苯甲基橫酸S旨基。而且，作為硼酸酯殘基，可例示下述式所示的基。(p: 700-pmoi%) (wherein, p represents a number of 15 to 100.) _ Manufacture method of ionic polymer 1 Next, a method of producing an ionic polymer according to the present embodiment will be described. A suitable method for producing the ionic polymer according to the present embodiment is, for example, a method in which a compound represented by the following general formula (36) is used as one of the raw materials to carry out condensation polymerization. In the chemical person represented by the following general formula (36), a compound using a structural unit selected from the group consisting of -Aa- is a formula (13), a compound represented by the formula (15) of 323545 151 201228842 (15), and a formula ( It is preferable that at least one of the group of the compound of the structural unit shown and the compound of the structural unit of the formula (20) is grouped. Y4-Aa - Y5 (36) (In the formula (36), Aa represents one or more kinds of groups and formulas (3) having a group selected from the group represented by the formula (1) and a group represented by the formula (2). In the structural unit of one or more types shown, Y4 and Y5 each independently represent a group which participates in condensation polymerization.) The ionic polymer of the present embodiment contains -Aa- in the above formula (36) In the case of the structural unit shown and other structural units other than -Aa-, a compound having a structural unit other than -Aa- and two compounds participating in the condensation polymerization are condensed and polymerized together with the compound represented by the formula (36). As a compound having a structural unit other than -Aa- and two groups participating in condensation polymerization, for example, a compound represented by the formula (37). By condensing and polymerizing a compound represented by the formula (36) with a compound represented by the formula (37), an ionic polymer having a structural unit represented by -Ab- can be produced. Y6-Ab-Y7 (37) (In the formula (37), Ab is a structural unit represented by the general formula (33) or a structural unit represented by the general formula (35), and Y6 and Y7 each independently represent a group participating in the condensation polymerization. Examples of the groups (Y4, Y5, Y6, and γ7) involved in the condensation polymerization include a hydrogen atom, an iS atom, an alkyl group, an aromatic group, and an aromatic group. , shed acid residue, sulfhydryl, sulfhydryl, hydrazine, monohalogenated fluorenyl, -b(oh)2, fluorenyl, cyano and vinylene 0 152 323545 201228842 As a halogen atom, for example, a fluorine atom, a gas atom, a desert atom, and a moth atom. Examples of the carboxylic acid s group include a methyl sulfonate group, an ethyl sulfonate group, and a trifluorosulfonate group. Examples of the aryl sulfonate group include a benzenesulfonate group. And p-toluenesulfonate. As the aryl group-based acid vinegar group, a benzyl sulfonate S group can be exemplified. Further, examples of the boronic acid ester residue include a group represented by the following formula.

och3 oc2h5 B —Q OCH3 、OC2H5Och3 oc2h5 B —Q OCH3 , OC2H5

〇 — \ 〇再者，作為锍曱基，可例示下述式： -CH2S+Me2E-或-CH2S+Ph2E_ (式中，E表示鹵原子。Ph表示苯基。以下相同。）所示的基。作為鱗甲基，可例示下述式： -CH2P+Ph3E- φ (式中，E表示鹵原子。）所示的基。作為磷酸酯甲基，可例示下述式： -CH2P0(0Rd)2 (式中，Rd表示院基、芳香基或芳香基烧基。）所示的基。作為單鹵化甲基，可例示氟化曱基、氯化曱基、溴化甲基及碘化甲基。適合作為參與縮合聚合的基之基，隨聚合反應的種類而異，例如使用山本（Yamamoto)偶合反應等0價鎳錯合物 153 323545 201228842 的情況，可列舉鹵原子、烷基磺酸酯基、芳香基磺酸酯基及芳香基烧基碟酸酯基。使用鈴木（Suzuki)偶合反應等錄觸媒或鈀觸媒的情況，可列舉為烷基磺酸酯基、鹵原子、蝴酸酯殘基及-B(0H)2等。於氧化劑或電化學氧化聚合的情況’可列舉氫原子。作為製造關於本實施態樣的離子性聚合物之方法，例如可採用將一般式（36)或（37)所示的化合物（單體），依據需要溶解於有機溶劑，使用臉、適當的觸媒，在有機溶劑的熔點以上沸點以下的溫度反應聚合的方法。作為如此的聚合方法，可採用例如“有機反應（Organic Reactions)” ，第 14 卷，270-490 頁，約翰威力公司（John Wiley & Sons)，1965 年；“有機合成（Organic Syntheses)” ，和集第 6 卷（Collective Volumn VI)， 407-411 頁，約翰威力公司（John Wiley & Sons)，1988 年；化學回顧（Chem· Rev·)，第95卷，2457頁（1995年）；有機金屬化學期刊（J. Organomet. Chem.)，第576卷，147 頁（1999年）；巨大分子化學巨大分子研討會（Macromol. Chera.，Macromol. Symp.)，第 12 卷，229 頁（1987 年）記载之方法。作為製造關於本實施態樣的離子性聚合物之方法，依據參與縮合聚合的基之種類，可採用已知的縮合聚合反應。作為如此的聚合方法，例如可列舉將適當的單體藉由鈴木（Suzuki)偶合反應聚合的方法、藉由格里納（Grignard) 反應聚合的方法、藉由Ni零價錯合物（Ni(0)錯合物）聚合 154 323545 201228842 的方法、藉由FeCh等氧化劑聚合的方法及電化學氧化聚合的方法、或分解具有適當脫離基之中間體高分子之方法° 其中’將適當的單體藉由鈴木（Suzuki)偶合反應聚合的方法、藉由格里納（Grignard)反應聚合的方法以及藉由痛零價錯合物聚合的方法，因所得的離子性聚合物的構造容易控制，所以較理想。關於本實施態樣的離子性聚合物之較佳製造方法的〆態樣，係使用具有選自_原子、烧基續酸酯基、芳香纂轉 • 酸酯基及芳香基烷基磺酸酯基所成群的基之原料單體的炱少1種，作為參與縮合聚合的基，在錄零價錯合物存在下進行縮合聚合，製造離子性聚合物之方法。作為該情況之原料單體’例如可列舉二鹵化化合物、雙（烧基續酸酯）化合物、雙（芳香基磺酸酯）化合物、雙（芳香基烷基磺酸酯）化合物、齒素-烷基磺酸酯化合物、齒素—芳香基磺酸酯化合物、鹵素-芳香基烷基磺酸酯化合物、烷基磺酸酯_芳香 φ 基磺酸酯化合物、烷基磺酸酯-芳香基烷基磺酸酯化合物及芳香基續酸酯-芳香基烷基磺酸酯化合物。關於本實施態樣的離子性聚合物之較佳製造方法的其他態樣，係使用具有選自鹵原子、烷基磺酸酯基、芳香基 %酸酯基、芳香基烷基磺酸酯基、_B(0H)2及硼酸酯殘基所成群的基，作為參與縮合聚合的基，全部原料單體具有之鹵原子、烷基磺酸酯基、芳香基磺酸酯基、芳香基烷基磺酸醋基的莫耳數之合計⑴以及原料單體中-B(〇H)2及職酯殘基的莫耳數之合計（K)的比實質上為〗（通常K/J為〇 . 7 323545 155 201228842 至1· 2的範圍）之原料單體，在鎳觸媒或鈀觸媒的存在下進行縮合聚合，製造離子性聚合物之方法。作為有機溶劑，根據原料單體的種類及反應的種類而異，為了抑制副反應，使用充分施以脫氧處理之有機溶劑較理想。於製造關於本實施態樣的離子性聚合物的情況’ 使用脫氧處理的有機溶劑，在惰性環境下進行反應較理想。有機溶劑，進行與前述脫氧處理同樣的脫水處理較理想。但是，鈴木偶合反應等的與水的2相系之反應之情況’ 則不受此限制。作為有機溶劑，例如可列舉戊烧、己院、庚炫、辛烧、環己烷等飽和烴，苯、甲苯、乙基苯、二曱笨等不飽和烴’ 四氣化碳、三氯曱烷、二氯曱烷、氯丁烷、溴丁烷、氯戊烷、溴戊烷、氯己烷、溴己烷、氯環己烷及溴環己烷等鹵化飽和烴，氣苯、二氯苯及三氣苯等齒化不飽和烴、曱醇、乙醇、丙醇、異丙醇、丁醇及第3丁醇等醇類，甲酸、乙酸及丙酸等羧酸類，甲醚、乙醚、曱基-第3 丁基醚、四氫呋喃、四氩吡喃（tetrahydropyran)及二噁烷（dioxane)等 _類’三曱基胺、三乙基胺、Ν，Ν，Ν’，Ν’-四曱基乙二胺及. 吡啶等胺類、以及Ν，Ν-二甲基甲醯胺、Ν，Ν-二曱基乙醯胺、 Ν,Ν-二乙基乙醯胺及Ν-曱基氧化嗎琳 (N-methylmorpholine oxide)等醯胺類。有機溶劑，可單獨1種或混合2種以上使用。有機溶劑中，從反應性的觀點，醚類更理想，四風11夫喃及乙趟更加理想。有機溶劑中，從反應速度的觀點，曱苯及二甲苯車交理押。 323545 156 201228842 製造離子性聚合物時，為了使原料單體有效率地反應，添加鹼、適當的觸媒於反應液較理想。鹼或觸媒，依據採用的聚合方法等選擇即可。作為驗或觸媒，充分溶解於反應所使用的溶劑者較理想。而且，作為混合驗或觸媒之方法，例如將反應液在氬氣或氮氣等惰性環境下一邊攪拌一邊慢慢添加驗或觸媒的溶液之方法、以及於驗或觸媒的溶液中慢慢添加反應液之方法。關於本實施態樣的離子性聚合物，末端基依照原樣殘 ® 留時，因所得的發光元件的發光特性、壽命特性可能降低，末端基亦可被安定的基保護。於關於本實施態樣的離子性聚合物為共軛化合物的情況，保護末端基之安定的基，以具有共軛鍵結’形成與離子性聚合物的主鏈的共軛構造連續之共軛構造較理想。作為該構造，例如可列舉隔著碳-碳鍵與芳香基或雜環基結合的構造。作為保護末端基之安定的基’例如可列舉日本特開平9-45478號公報之化10的 φ 構造式所示的1價芳香族化合物基等的取代基。作為製造包含式（1)所示的構造單元之離子性聚合物之其他較佳方法’可列舉在第1步驟，聚合不具有陽離子之離子性聚合物’在第2步驟，從該離子性聚合物含有陽離子之製造離子性聚合物的方法。作為第1步驟之聚合不具有陽離子之離子性聚合物的方法，可列舉前述縮合聚合反應。作為第2步驟的反應，可列舉藉由金屬氫氧化物或烷基銨氫氧化物等之水解反應等。作為製造包含式（2)所示的基之離子性聚合物之其他 157 323545 201228842 較佳方法，可列舉在第1步驟，聚合不具有離子之離子性聚合物，在第2步驟，從該離子性聚合物含有離子之製造離子性聚合物的方法。作為第1步驟之聚合不具有離子之離子性聚合物的方法，可列舉前述縮合聚合反應。作為第 2步驟的反應，可列舉使用鹵化烷基之胺的4級銨氯化反應或藉由SbF5之脫鹵素反應等。關於本實施態樣的離子性聚合物，電荷的注入性及傳輸佳。所以，具有包含關於本實施態樣的離子性聚合物的 ^層之發光元件，可以高亮度發光。作為形成包含離子性聚合物的層之方法，例如可列舉使用含有離子性聚合物的溶液成膜之方法。Further, as the fluorenyl group, the following formula: -CH2S+Me2E- or -CH2S+Ph2E_ (wherein, E represents a halogen atom. Ph represents a phenyl group. The same applies hereinafter.) . The quaternary methyl group may, for example, be a group represented by the following formula: -CH2P+Ph3E-φ (wherein, E represents a halogen atom). The phosphate methyl group may, for example, be a group represented by the formula: -CH2P0(0Rd)2 (wherein, Rd represents a group, an aromatic group or an aromatic group). The monohalogenated methyl group may, for example, be a fluorinated fluorenyl group, a ruthenium chloride group, a brominated methyl group or a methyl iodide group. The base which is suitable as a base for the condensation polymerization varies depending on the type of the polymerization reaction. For example, a case where a zero-valent nickel complex 153 323545 201228842 such as a Yamamoto coupling reaction is used, and a halogen atom or an alkyl sulfonate group may be mentioned. An aryl sulfonate group and an aryl siloxane group. When a recording medium or a palladium catalyst such as a Suzuki coupling reaction is used, an alkylsulfonate group, a halogen atom, a carboxylate residue, and -B(0H)2 may be mentioned. In the case of oxidizing agent or electrochemical oxidative polymerization, a hydrogen atom can be cited. As a method of producing the ionic polymer according to the present embodiment, for example, a compound (monomer) represented by the general formula (36) or (37) can be used, if necessary, dissolved in an organic solvent, using a face, an appropriate touch. The medium is a method of reactive polymerization at a temperature below the melting point of the organic solvent. As such a polymerization method, for example, "Organic Reactions", Vol. 14, pp. 270-490, John Wiley & Sons, 1965; "Organic Syntheses", And Vol. 6 (Collective Volumn VI), pp. 407-411, John Wiley & Sons, 1988; Chem. Rev., vol. 95, p. 2457 (1995); J. Organomet. Chem., vol. 576, pp. 147 (1999); Macromolecule Cherik. 1987) method described. As a method of producing the ionic polymer according to the present embodiment, a known condensation polymerization reaction can be employed depending on the kind of the group which participates in the condensation polymerization. As such a polymerization method, for example, a method in which a suitable monomer is polymerized by a Suzuki coupling reaction, a method by a Grignard reaction polymerization, and a Ni zero-valent complex (Ni ( 0) a compound of 154 323545 201228842, a method of polymerization by an oxidizing agent such as FeCh, a method of electrochemical oxidative polymerization, or a method of decomposing an intermediate polymer having a suitable detachment group, wherein 'the appropriate monomer By the Suzuki coupling reaction polymerization method, the Grignard reaction polymerization method, and the pain zero-valent complex polymerization method, the structure of the obtained ionic polymer is easily controlled, so More ideal. A preferred aspect of the preferred method for producing an ionic polymer according to the present embodiment is the use of a group selected from the group consisting of _ atoms, alkyl acrylate groups, aromatic oxime ester groups, and aryl alkyl sulfonates. The method of producing an ionic polymer by performing condensation polymerization in the presence of a zero-valent complex as a group participating in the condensation polymerization as a group which participates in the condensation polymerization. Examples of the raw material monomer 'in this case include a dihalogenated compound, a bis(alkyl phthalate) compound, a bis(arylsulfonate) compound, a bis(arylalkylsulfonate) compound, and a dentate- Alkyl sulfonate compound, dentate-aryl sulfonate compound, halogen-aryl alkyl sulfonate compound, alkyl sulfonate _ aromatic φ sulfonate compound, alkyl sulfonate-aryl group Alkyl sulfonate compounds and aryl phthalate-arylalkyl sulfonate compounds. Other aspects of the preferred method for producing an ionic polymer according to the present embodiment are those having a halogen atom, an alkyl sulfonate group, an aryl ester group, an aryl alkyl sulfonate group. a group in which _B(0H)2 and a borate residue are grouped, and as a group participating in the condensation polymerization, all of the raw material monomers have a halogen atom, an alkylsulfonate group, an arylsulfonate group, and an aromatic group. The total number of moles of the alkyl sulfonate vine group (1) and the ratio of the total number of moles (K) of the -B(〇H) 2 and the ester residue of the starting monomer are substantially ** (usually K/J) The method of producing an ionic polymer by carrying out condensation polymerization in the presence of a nickel catalyst or a palladium catalyst is a raw material monomer of 7 323545 155, 201228842 to 1-2. The organic solvent is preferably an organic solvent which is sufficiently subjected to deoxidation treatment in order to suppress side reactions depending on the type of the raw material monomer and the type of the reaction. In the case of producing an ionic polymer according to the present embodiment, it is preferable to carry out the reaction in an inert environment using a deoxidizing organic solvent. The organic solvent is preferably treated in the same manner as the deoxidation treatment described above. However, the case of the reaction with the two-phase system of water such as the Suzuki coupling reaction is not limited thereto. Examples of the organic solvent include saturated hydrocarbons such as pentylthasone, hexazone, heptane, octane, and cyclohexane, and unsaturated hydrocarbons such as benzene, toluene, ethylbenzene, and dioxane, which are four-gasified carbon and trichloroanthracene. Halogenated saturated hydrocarbons such as alkane, dichlorodecane, chlorobutane, bromobutane, chloropentane, bromopentane, chlorohexane, bromohexane, chlorocyclohexane and bromocyclohexane, benzene, dichlorobenzene Toxic unsaturated hydrocarbons such as benzene and tri-benzene, alcohols such as decyl alcohol, ethanol, propanol, isopropanol, butanol and third butanol, carboxylic acids such as formic acid, acetic acid and propionic acid, methyl ether and diethyl ether, Mercapto-tert-butyl ether, tetrahydrofuran, tetrahydropyran, dioxane, etc., such as 'tridecylamine, triethylamine, hydrazine, hydrazine, hydrazine', Ν'-four Amines such as mercaptoethylenediamine and pyridine, and hydrazine, hydrazine-dimethylformamide, hydrazine, hydrazine-dimercaptoacetamide, hydrazine, hydrazine-diethylacetamide and hydrazine-fluorenyl Amidoxime such as N-methylmorpholine oxide. The organic solvent may be used singly or in combination of two or more. Among the organic solvents, from the viewpoint of reactivity, the ethers are more desirable, and the four winds 11 and the acetamidine are more desirable. In the organic solvent, from the viewpoint of the reaction rate, the indene and xylene vehicles are handled. 323545 156 201228842 When producing an ionic polymer, in order to efficiently react a raw material monomer, it is preferred to add a base and a suitable catalyst to the reaction liquid. The base or the catalyst may be selected depending on the polymerization method to be employed. As the test or catalyst, it is preferred to dissolve the solvent used in the reaction. Further, as a method of mixing or a catalyst, for example, a method in which a reaction solution is slowly added to a solution of a catalyst or a catalyst while stirring in an inert atmosphere such as argon or nitrogen, and a solution in a test or catalyst is slowly taken. A method of adding a reaction solution. In the ionic polymer of the present embodiment, when the terminal group remains as it is, the light-emitting characteristics and life characteristics of the obtained light-emitting element may be lowered, and the terminal group may be protected by a stable group. In the case where the ionic polymer of the present embodiment is a conjugated compound, the group which protects the terminal group is stabilized, and has a conjugated bond to form a continuous conjugate with the conjugated structure of the main chain of the ionic polymer. The structure is ideal. As such a structure, for example, a structure in which a carbon-carbon bond is bonded to an aromatic group or a heterocyclic group is exemplified. For example, a substituent such as a monovalent aromatic compound group represented by the φ structural formula of Chemical Formula 10 of JP-A-9-45478 is used. Another preferred method for producing an ionic polymer comprising a structural unit represented by the formula (1) is exemplified by the first step of polymerizing an ionic polymer having no cation in the second step, from the ionic polymerization. A method of producing an ionic polymer containing a cation. As a method of polymerizing the ionic polymer having no cation in the first step, the above condensation polymerization reaction can be mentioned. The reaction in the second step includes a hydrolysis reaction by a metal hydroxide or an alkylammonium hydroxide or the like. Another preferred method for producing an ionic polymer comprising a group represented by the formula (2) is 157 323545 201228842, which is exemplified by the first step of polymerizing an ionic polymer having no ions, and in the second step, from the ion A method in which a polymer contains ions to produce an ionic polymer. The method of polymerizing the ionic polymer without ions in the first step includes the above condensation polymerization reaction. The reaction of the second step may be a 4-stage ammonium chloride reaction using an amine of a halogenated alkyl group or a dehalogenation reaction by SbF5. Regarding the ionic polymer of the present embodiment, charge injection property and transport are good. Therefore, a light-emitting element having a layer containing the ionic polymer of the present embodiment can emit light with high luminance. As a method of forming a layer containing an ionic polymer, for example, a method of forming a film using a solution containing an ionic polymer can be mentioned.

作為從溶液成膜所使用的溶劑，除水外，於醇類、醚類、酯類、腈化合物類、硝基化合物類、鹵化烷類、鹵化芳香族類、硫醇類、硫化物類、亞砜類、硫酮類、醯胺類及羧酸類等溶劑中，溶解度參數為9. 3以上的溶劑較理 φ 想。作為溶劑（各括號内的值表示各溶劑的溶解度參數之值），例如可列舉甲醇（12. 9)、乙醇（11. 2)、2-丙醇（11. 5)、卜丁醇（9. 9)、第 3 丁醇（10. 5)、乙腈（11. 8)、1，2-乙二醇 (14. 7)、N，N-二曱基甲醯胺（11.5)、二甲基亞砜（12.8)、乙酸（12.4)、硝基苯（11.1)、硝基曱烷（11.0)、1,2-二氣乙烷（9.7)、二氯曱烷（9.6)、氯苯（9.6)、溴苯（9.9)、二 0惡烧（9. 8)、碳酸伸丙S旨（13. 3)、°比咬（10. 4)、二硫化碳 (10. 0)及該些溶劑的混合溶劑。混合2種溶劑（溶劑1及溶劑2)所成的混合溶劑的溶解度參數<〇)可藉由X 158 323545 201228842 Φ1+5 2X0 2求得（5 1為溶劑1的溶解度參數、Λ * 的體積比例、&為溶劑2的溶解度參數數劑1 體積比例。ρ ^為溶劑2的而異電=2度’最佳值隨所使用的離子性聚合物 Μ入Ϊ _壓與發級率成為適當的值。電 ^日，必須具有不產生孔洞（Pin " 低::的驅動電壓之觀點’電子注入層之厚度為理想’ 2nm至5〇〇nm更理想，2nm至200nm更加理押。從保護發光層的觀點，電子注人層之厚度為5⑽至理想。双· 〈陰極〉作為陰極材料，以功函數小、對發光層容易注入電子且電度咼的材料較理想。於從陽極侧取出光之有機EL元件的I#况’為了於陽極側反射來自發光層發出的光，可見光反射率高的材料作為陰極的材料較理想。作為陰極材 _料’可使用例如驗金屬、驗土類金屬、過渡金屬及週期表 13族金屬。作為陰極材料，例如使用鐘、納、鉀、紙、絶、鈹、鎂、鈣、鳃、鋇、鋁、銃、釩、鋅、釔、銦、鈽、釤、銪、铽（Tb)、镱（Yb)等金屬及包含選自該些中2種以上的金屬之合金、選自前述金屬中丨種以上與金、銀、鉑、銅、錳、鈦、鈷、鎳、鎢及錫中丨種以上的合金、或石墨或石墨層間化合物。作為合金的例，例如鎂_銀合金、鎂〜銦合金、鎂-鋁合金、銦-銀合金、鋰—鋁合金、鋰_鎂合金、鋰一銦合金及鈣-鋁合金等。作為陰極，可使用導電性金屬氧化 323545 159 201228842 物及導電性有機物等所成的透明導電性電極。具體地，作為導電性金屬氧化物’可列舉氧化銦、氧化鋅、'氧化锡、 ΙΤ0及ΙΖ0,作為導電性有機物’可列舉聚笨胺或其衍生物及聚噻吩或其衍生物等。陰極可為由2層以上積層的積層體所構成。電子注入層有使用作為陰極的情況。陰極的膜厚’考慮要求的特性及步驟的簡易度等適當地設計，例如為10nm至ΙΟ/zm，較理想為別⑽至更理想為50nm至500nm。作為陰極的製作方法，例如真空蒸錢法、賤錄法及轨壓金屬薄膜之層合法等。以上’有機EL裝置’藉由追加既定的構成構件，可使用作為照明裝置、面光源裝置或顯示裝置。實施例 (參考例A1) 使用前述第4圖所示的製造裝置，製造第i薄膜。亦即，使用2軸延伸之聚萘二甲酸乙二酉旨⑽薄膜、厚度：寬度：35〇咖、帝人杜邦薄膜（股）製、商品名「肌 Q65FA」）作為基材（基材6) ’將其安裝於送出滾輪7〇1。然 j ’於成麻輪31與成職輪32 _加祕，同時對成 ^衰輪31與賴滾輪32分難應電力，於成職輪31與膜滚輪32之間進行放電’產生電襞。於形成的放電區 ^供㈣職體（作絲料氣體之巧基二㈣紐誦) =為反應氣體之氧氣（也作為放電氣體的功能）的混合氣體），以下述條件’進行藉由電聚CVD法之薄膜形成，得到 323545 160 201228842 第1薄膜。〈成膜條件> 原料氣體的供應量：5〇sccm(換算零度、1大氣壓之 standard cubic centimetre per minute。以下相同。）氧氣的供應量：500sccm 真空腔體内的真空度：3Pa 從電聚產生用電源的施加電力：0. 8Kw 電聚產生用電源的頻率：70kHz λ專膜運送速度：0.5m/min 所得的第1薄膜之氣體阻隔層的厚度為0.3//m。而且’所得的第1薄膜之水蒸氣透過度，在溫度40°C、低濕度側的濕度0%RH、高濕度側的濕度90%RH的條件下為3. 1 xl(T4g/(in2· day)，於溫度40°C、低濕度侧的濕度10%RH、高濕度側的濕度100% RH的條件為檢測界限以下的值。再者，曲率半徑8mm的條件下彎曲第1薄膜後的溫度4(TC、 φ 低濕度側的濕度10% RH、高濕度侧的濕度100% RH的條件之水蒸氣透過度為檢測界限以下的值，確認即使彎曲第1 薄膜的情況下充分抑制氣體阻隔性的降低。對第1薄膜，以下述條件，進行XPS縱深分佈（depth profiling)測定，得到矽分佈曲線、氧分佈曲線及碳分佈曲線。 #刻離子種類：氬（Ar+) 餘刻速率（Si〇2熱氧化膜換算值）：0.05nm/sec 蝕刻間隔（Si〇2換算值）：lOnra 161 323545 201228842 \ _ i射線光電子分光裝置：Thermo Fisher Scienticfic A司、機種名稱「VG Theta Probe」照射X射線：單結晶分光ΑΙΚα 射β線的點及其大小：_^糊_的橢圓形As a solvent used for film formation from a solution, in addition to water, alcohols, ethers, esters, nitrile compounds, nitro compounds, halogenated alkanes, halogenated aromatics, mercaptans, sulfides, In a solvent such as a sulfoxide, a thiol, a guanamine or a carboxylic acid, a solvent having a solubility parameter of 9.3 or more is considered to be φ. Examples of the solvent (the values in the respective parentheses indicate the solubility parameter of each solvent) include methanol (12.9), ethanol (11.2), 2-propanol (11.5), and butanol (9). 9), 3rd butanol (10.5), acetonitrile (1. 8), 1,2-ethanediol (14.7), N,N-dimercaptocarboxamide (11.5), dimethyl Sulfone (12.8), acetic acid (12.4), nitrobenzene (11.1), nitrodecane (11.0), 1,2-dioxaethane (9.7), dichlorodecane (9.6), chlorobenzene ( 9.6), bromobenzene (9.9), dioxin (9.8), carbonic acid propylene (13. 3), ° bite (10.4), carbon disulfide (10.0) and these solvents Mixed solvent. The solubility parameter <〇) of a mixed solvent obtained by mixing two kinds of solvents (solvent 1 and solvent 2) can be obtained by X 158 323545 201228842 Φ1+5 2X0 2 (5 1 is the solubility parameter of solvent 1 , Λ * The volume ratio, & is the solubility parameter of solvent 2, the volume of the agent is 1 volume ratio. ρ ^ is the solvent 2 and the isoelectricity = 2 degrees 'the optimum value with the ionic polymer used Μ _ pressure and the rate of occurrence It is an appropriate value. The electric day must have a hole (Pin " low:: drive voltage point of view 'the thickness of the electron injection layer is ideal' 2nm to 5〇〇nm is more ideal, 2nm to 200nm more pledged From the viewpoint of protecting the light-emitting layer, the thickness of the electron-injecting layer is 5 (10) to ideal. Double · <Cathode> As a cathode material, a material having a small work function and easily injecting electrons into the light-emitting layer and having an electric enthalpy is preferable. In order to reflect light emitted from the light-emitting layer on the anode side, a material having a high visible light reflectance is preferable as a material of the cathode. For example, a metal material can be used as the cathode material. Soil testing metals, transition metals and Metals of Group 13 of the Periodic Table. As cathode materials, for example, bell, nano, potassium, paper, bismuth, barium, magnesium, calcium, strontium, barium, aluminum, strontium, vanadium, zinc, antimony, indium, antimony, bismuth, antimony, a metal such as lanthanum (Tb) or yttrium (Yb) or an alloy containing two or more metals selected from the above, selected from the above metals and selected from the group consisting of gold, silver, platinum, copper, manganese, titanium, cobalt, and nickel. , alloys of graphite or graphite in tungsten and tin, or graphite or graphite intercalation compounds. Examples of alloys such as magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium-silver alloy, lithium-aluminum alloy, lithium _Magnesium alloy, lithium-indium alloy, calcium-aluminum alloy, etc. As the cathode, a transparent conductive electrode made of a conductive metal oxide 323545 159 201228842 or a conductive organic substance can be used. Specifically, it is used as a conductive metal oxide. 'Indium oxide, zinc oxide, 'tin oxide, ΙΤ0 and ΙΖ0, and a conductive organic substance' may, for example, be a polyphenylamine or a derivative thereof, or a polythiophene or a derivative thereof. The cathode may be a laminate of two or more layers. The body is composed of electron injection layer The film thickness of the cathode is appropriately designed in consideration of required characteristics and ease of steps, and the like, for example, is 10 nm to ΙΟ/zm, more preferably (10) to more preferably 50 nm to 500 nm. For example, a vacuum evaporation method, a recording method, and a layering method of a rail-pressed metal film. The above-mentioned 'organic EL device' can be used as a lighting device, a surface light source device, or a display device by adding a predetermined constituent member. Example A1) The i-th film was produced by using the manufacturing apparatus shown in the above-mentioned FIG. 4, that is, using a 2-axially stretched polyethylene naphthalate (10) film, thickness: width: 35 〇、, Teijin DuPont film ( The base product (product name "Muscle Q65FA") is used as a base material (base material 6). It is attached to the delivery roller 7〇1. However, j' is formed on the hemp wheel 31 and the professional wheel 32. At the same time, the electric power is generated by the electric power between the professional wheel 31 and the film roller 32. In the discharge area formed, (4) the body (the mixture of the gas and the gas (2)) is a mixed gas of the oxygen of the reaction gas (also functioning as a discharge gas), and is powered by the following conditions. The film of the poly CVD method was formed to obtain a first film of 323545 160 201228842. <Film formation conditions> Supply amount of raw material gas: 5 〇 sccm (standard cubic centimetre per minute converted to zero degree, 1 atm. The same applies below.) Supply of oxygen: 500 sccm Vacuum degree in vacuum chamber: 3 Pa From electropolymerization Power applied to the power source: 0. 8Kw Frequency of power generation for electropolymerization: 70 kHz λ film transport speed: 0.5 m/min The thickness of the gas barrier layer of the obtained first film was 0.3/m. Further, the water vapor transmission degree of the obtained first film is 3. 1 xl (T4g/(in2·) at a temperature of 40 ° C, a humidity of 0% RH on the low humidity side, and a humidity of 90% RH on the high humidity side. Day), the temperature is 40 ° C, the humidity on the low humidity side is 10% RH, and the humidity on the high humidity side is 100% RH, which is a value below the detection limit. Further, after bending the first film under the condition of a curvature radius of 8 mm The water vapor permeability of the condition 4 (TC, φ, humidity of 10% RH on the low humidity side, and humidity 100% RH on the high humidity side) is a value below the detection limit, and it is confirmed that the gas barrier is sufficiently suppressed even when the first film is bent. The first film was subjected to XPS depth profiling under the following conditions to obtain a ruthenium distribution curve, an oxygen distribution curve, and a carbon distribution curve. #刻离子类: Argon (Ar+) Residual rate (Si 〇2 thermal oxide film conversion value): 0.05nm/sec etch interval (Si〇2 conversion value): lOnra 161 323545 201228842 \ _ i-ray photoelectron spectroscopy device: Thermo Fisher Scienticfic A division, model name "VG Theta Probe" irradiation X Ray: single crystal split ΑΙΚα shot β Point and its size: _ ^ _ oval paste

分佈曲線、氧分佈曲線及碳分佈曲線分別表佈曲線5圖。關於所得的矽分佈曲線、氧分佈曲線及碳分、，原子比（原子濃度）與蝕刻時間的關係，同時原子表厂原:濃度)與離氣體阻隔層表面之距離(n m )的關係合併 ^於第6 ® °第6圖的圖表的橫軸記載之「距離（nm)」係從餘刻時間與蝴速度計算求得的值。由第5圖及第6圖所示的結果得知，確認所得的碳分佈曲線具有複數明確的極值，碳的原子比的最大值與最小值的差為5at%以上’以及於氣體阻隔層的厚度方向的9〇% =上的區域’料原子比、氧的原子比及碳的原子比滿足前述式（1)所示的條件。 (參考例A2) ★將參考例A1所得的具有厚度〇.3iain的氣體阻隔層之第1薄獏安裝於送出滾輪7(Π，於氣體阻隔層的表面上形成新的氣體阻隔層。除此之外，與參考例A1同樣地，得到第1薄膜（A)。第1薄膜（A)之基材（pEN薄膜）上的氣體阻隔層之厚度為〇.6//m。將第1薄膜（A)安裝於送出滾輪7〇1，於氣體阻隔層的表面上形成新的氣體阻隔層。除此之外，與參考例A1同樣地’得到第1薄膜（B)。 323545 162 201228842 第1薄膜（B)之氣體阻隔層之厚度為〇 9/zm。第1薄膜（B)之水蒸氣透過度，在溫度4〇〇c、低濕度侧的濕度〇% RH、高濕度侧的濕度90% RH的條件下為6.9xl0_4g/(m2· day)，於溫度40°C、低濕度側的濕度i〇%RH、高濕度侧的濕度100% RH的條件為檢測界限以下的值。再者，曲率半徑8mm的條件下彎曲第1薄膜（B)後的溫度4(Tc、低濕度側的濕度10% RH、高濕度側的濕度loo% rh的條件之水蒸氣透過度為檢測界限以下的值，確認即使彎曲第1薄膜（B) ® 的情況下亦充分抑制氣體阻隔性的降低。對第1薄膜（B)，藉由與參考例A1相同的方法’製作矽分佈曲線、氧分佈曲線及碳分佈曲線。所得的結果表示於第7圖。關於所得的石夕分佈曲線、氧分佈曲線及碳分佈曲線，原子比（原子濃度）與蝕刻時間的關係，同時原子比 (原子濃度）與離氣體阻隔層表面之距離（nm)的關係合併表示於第8圖。第8圖的圖表的橫轴記載之「距離（nm)」係 • 從蝕刻時間與蝕刻速度計算求得的值。由第7圖及第8圖所示的結果得知，確認所得的碳分佈曲線具有複數明確的極值，碳的原子比的最大值與最小值的差為5at%以上，以及於氣體阻隔層的厚度方向的90% 以上的區域，石夕的原子比、氧的原子比及碳的原子比滿足前述式（1)所示的條件。 (參考例A3) 除原料氣體的供應量為l〇〇sccm外，與參考例A1同樣地，得到第1薄膜。 163 323545 201228842 第1薄膜之氣體阻隔層之厚度為0. 6#m。第1薄膜之水蒸氣透過度，在溫度40°C、低濕度側的濕度0% RH、高濕度側的濕度90%RH的條件下為3.2xl0_4g/(in2· day)，於溫度40°C、低濕度側的濕度10% RH、高濕度侧的濕度100% RH的條件為檢測界限以下的值。再者，曲率半徑8 mm的條件下彎曲第1薄膜後的溫度40°C、低濕度側的濕度10% RH、高濕度側的濕度100% RH的條件之水蒸氣透過度為檢測界限以下的值，確認即使彎曲第1薄膜的情況下亦充分 ®抑制氣體阻隔性的降低。對第1薄膜，藉由與參考例A1相同的方法，製作矽分佈曲線、氧分佈曲線及碳分佈曲線。所得的結果表示於第 9圖。關於所得的矽分佈曲線、氧分佈曲線及碳分佈曲線，原子比（原子濃度）與蝕刻時間的關係，同時原子比（原子濃度）與離氣體阻隔層表面之距離（nm)的關係合併表示於第 10圖。第10圖的圖表的橫軸記載之「距離（nm)」係從蝕 φ 刻時間與蝕刻速度計算求得的值。由第9圖及第10圖所示的結果得知，確認所得的碳分佈曲線具有複數明確的極值，碳的原子比的最大值與最小值的差為5at%以上，以及於氣體阻隔層的厚度方向的90% 以上的區域，石夕的原子比、氧的原子比及碳的原子比滿足前述式（1)所示的條件。 (參考比較例A1)The distribution curve, the oxygen distribution curve, and the carbon distribution curve respectively represent the curve 5 diagram. The relationship between the obtained enthalpy distribution curve, the oxygen distribution curve and the carbon content, the atomic ratio (atomic concentration) and the etching time, and the relationship between the atomic mass spectrometer and the distance from the surface of the gas barrier layer (nm) The "distance (nm)" described on the horizontal axis of the graph of Fig. 6 ® °, Fig. 6 is a value obtained by calculating the residual time and the butterfly speed. From the results shown in Figs. 5 and 6, it is confirmed that the obtained carbon distribution curve has a complex maximum value, and the difference between the maximum value and the minimum value of the atomic ratio of carbon is 5 at% or more 'and the gas barrier layer. In the thickness direction, 9〇% = the upper region 'material atom ratio, oxygen atom ratio, and carbon atom ratio satisfy the condition shown by the above formula (1). (Reference Example A2) ★ The first thin crucible having a gas barrier layer having a thickness of 33iain obtained in Reference Example A1 was attached to the delivery roller 7 (Π, a new gas barrier layer was formed on the surface of the gas barrier layer. In the same manner as in Reference Example A1, the first film (A) was obtained. The thickness of the gas barrier layer on the substrate (pEN film) of the first film (A) was 〇6/m. (A) The first film (B) was obtained in the same manner as in Reference Example A1 except that a new gas barrier layer was formed on the surface of the gas barrier layer, and the first film (B) was obtained. 323545 162 201228842 1 The thickness of the gas barrier layer of the film (B) is 〇9/zm. The water vapor transmission rate of the first film (B) is 4 〇〇c at a temperature, 〇% RH on the low humidity side, and 90% at a high humidity side. The condition of % RH is 6.9x10_4g/(m2·day), and the temperature is 40°C, the humidity on the low humidity side is i〇%RH, and the humidity on the high humidity side is 100% RH. The value is equal to or lower than the detection limit. The temperature 4 (Tc, humidity 10% RH on the low humidity side, and humidity loo% rh on the high humidity side) after bending the first film (B) under the condition of a curvature radius of 8 mm The water vapor transmission rate is a value below the detection limit, and it is confirmed that the gas barrier property is sufficiently suppressed even when the first film (B) ® is bent. The first film (B) is the same as the reference example A1. Method 'Preparation of 矽 distribution curve, oxygen distribution curve and carbon distribution curve. The results obtained are shown in Fig. 7. Regarding the obtained Shishi distribution curve, oxygen distribution curve and carbon distribution curve, atomic ratio (atomic concentration) and etching time The relationship between the atomic ratio (atomic concentration) and the distance (nm) from the surface of the gas barrier layer is shown in Fig. 8. The "distance (nm)" on the horizontal axis of the graph of Fig. 8 is from the etching time. The value obtained by calculating the etching rate is obtained from the results shown in Fig. 7 and Fig. 8. It is confirmed that the obtained carbon distribution curve has a complex maximum value, and the difference between the maximum value and the minimum value of the atomic ratio of carbon is 5 atom% or more, and an atomic ratio of oxygen, an atomic ratio of oxygen, and an atomic ratio of carbon satisfy the condition shown by the above formula (1) in a region of 90% or more in the thickness direction of the gas barrier layer. (Reference Example A3) In addition to raw material gas The first film is obtained in the same manner as in Reference Example A1. 163 323545 201228842 The thickness of the gas barrier layer of the first film is 0. 6#m. The water vapor permeability of the first film. It is 3.2x10_4g/(in2·day) at a temperature of 40°C, a humidity of 0% RH on the low humidity side, and a humidity of 90%RH on the high humidity side, and a humidity of 10% at a temperature of 40°C and a low humidity side. The conditions of RH and humidity on the high humidity side of 100% RH are values below the detection limit. Further, the water vapor permeability of the condition that the temperature after bending the first film is 40° C, the humidity on the low humidity side is 10% RH, and the humidity on the high humidity side is 100% RH under the condition of a curvature radius of 8 mm is equal to or less than the detection limit. The value was confirmed to be sufficient to suppress a decrease in gas barrier properties even when the first film was bent. With respect to the first film, a ruthenium distribution curve, an oxygen distribution curve, and a carbon distribution curve were produced by the same method as Reference Example A1. The results obtained are shown in Fig. 9. Regarding the obtained enthalpy distribution curve, oxygen distribution curve, and carbon distribution curve, the relationship between the atomic ratio (atomic concentration) and the etching time, and the relationship between the atomic ratio (atomic concentration) and the distance (nm) from the surface of the gas barrier layer are combined. Figure 10. The "distance (nm)" described on the horizontal axis of the graph of Fig. 10 is a value obtained by calculating the etching time and the etching rate. From the results shown in Fig. 9 and Fig. 10, it was confirmed that the obtained carbon distribution curve has a complex maximum value, and the difference between the maximum value and the minimum value of the atomic ratio of carbon is 5 at% or more, and in the gas barrier layer. In the region of 90% or more in the thickness direction, the atomic ratio of the stone, the atomic ratio of oxygen, and the atomic ratio of carbon satisfy the condition shown by the above formula (1). (Refer to Comparative Example A1)

於2軸延伸之聚萘二曱酸乙二酯（PEN薄膜、厚度：100 Ann、寬度：350mm、帝人杜邦薄膜（股）製、商品名「TEONEX 164 323545 201228842 Q65FA」）的表面上，使用矽濺鍍靶，於含有氧的氣體環境中，藉由反應濺鍍法，形成氧化矽所構成的氣體阻隔層足得到比較用的第1薄膜。 g ’ 第1薄膜之氣體阻隔層之厚度為100nm。而且，第至薄膜之水蒸氣透過度，在溫度4(TC、低濕度侧的濕度1〇?/ RH、高濕度側的濕度100%RH的條件下為13g/(m2·二y)) 其氣體阻隔性不足。 ’ 對第1薄膜，藉由與參考例A1相同的方法，製作矽分佈曲線、氧分佈轉及碳分佈曲線。所得的結果表示於= 11圖。關於所得的矽分佈曲線、氧分佈曲線及碳分佈曲線，原子比（原子濃度）與蝕刻時間的關係，同時原子比（原子度）與離氣體關層表面之㈣（nm)的關係合併表示於第 12圖。第12圖的圖表的橫轴記載之「距離（nm)」係從餘刻時間與㈣速度計算求得的值。由第u圖及第12圖所示的結果得知，確認所得的碳分佈曲線不具有極值。如以上說明，於關於本發明的有機EL裝置.，所利用的具有氣體阻隔層的第1薄膜，具有充分的氣體阻隔性，並且即使於彎曲的情況也可充分抑制氣體阻隔性的降低。然後，製作離子聚合物的同時，使用所製作的離子合物，製作有機EL元件。 Λ 聚合物的重量平均分子量（Mw)以及數平均分子量 (Μη)，係使用凝膠渗透層析法（Gpc)(東曹（T〇SQh)公里 HLC-822GGPC：)，求得聚苯乙馳算之重量平均分子量以及數平均分子量。m丨定的樣品，係溶解於四氫咬嗔， 323545 165 201228842 成為約0. 5重量％的濃度，以5〇以l注入gpc。再者，作為 GPC的移動相，係使用四氫呋喃，以〇 5mL/分的流速流動。聚合物的構造分析，係使用瓦里安（Varian»司製3〇〇MHz NMR光譜儀’藉由分析1H-NMR進行。而且，測定係以2〇mg/mL 的濃度，將樣品溶解於可溶的重溶劑（溶劑分子中的氫原子被重氫原子取代之溶劑）進行。聚合物的最高佔有分子執道 (HOMO)的軌道能量，係測定聚合物的離子化電位，所得的離子化電位作為該軌道能量而求得。另一方面，聚合物的最低未佔有分子轨道（LUM0)的執道能量，係求得H〇M〇與 LUM0的能量差，將其值與前述測定的離子化電位之和作為該軌道能量而求得。於離子化電位之測定，係使用光電子分光裝置（理研計器公司製：AC-2)。而且，HOMO與LUM0 的倉b篁差，係使用紫外光•可見光·近紅外線分光光度計 (瓦里安公司製：Cary5E)，測定聚合物的吸收光譜，由該吸收末端求得。 φ [參考例1] 2, —>臭_9, 9-雙[3-乙氧基幾基-4-[2-[2-(2-甲氧基乙氧基）乙氧基]乙氧基]笨基]-第（f luorene)(化合物A)的合成將2’ 7-二溴-9, 9-第（52. 5g)、水揚酸乙酯（154. 8g)及翰乙酸（mercaptoacetic acid)(1.4g)放入 300 毫升的燒瓶’燒瓶内的環境進行氮氣置換。於其中，添加曱院續酸 (630毫升）’將混合液在751攪拌整夜。將混合物放置冷卻，添加於冰水，攪拌1小時。過濾所生成的固體，以加 323545 166 201228842 熱的乙腈洗淨。使洗淨後之該固體溶解於㈣，從所丙酮溶液’再結晶固體，進行過濾。使所得的固體（62 = 2-[2-(2-曱氧基乙氧基）乙氧基卜對_甲笨續酸醋 (86· 3g)、碳酸_2·⑻及18-冠鍵_6(7. 2g)溶解於n n 二甲基曱醯胺（DMF)(670毫升），將溶液移入燒瓶，在1〇5。〇授拌整夜。所得的混合物冷卻至室溫，添加冰水，授拌1 小時。於反應液添加氯仿（300毫升），進行分液萃取，藉Use 矽 on the surface of 2-axially stretched polyethylene naphthalate (PEN film, thickness: 100 Ann, width: 350 mm, manufactured by Teijin DuPont Film Co., Ltd., trade name "TEONEX 164 323545 201228842 Q65FA") The sputtering target is used to form a gas barrier layer composed of cerium oxide by a reactive sputtering method in a gas atmosphere containing oxygen to obtain a first film for comparison. g The thickness of the gas barrier layer of the first film was 100 nm. Further, the water vapor transmission degree of the first film is 13 g/(m2·two y) at a temperature of 4 (TC, humidity of 1 〇?/ RH on the low humidity side, and humidity 100% RH on the high humidity side). Insufficient gas barrier properties. For the first film, a ruthenium distribution curve, an oxygen distribution turn, and a carbon distribution curve were produced by the same method as Reference Example A1. The results obtained are shown in the = 11 graph. Regarding the obtained enthalpy distribution curve, oxygen distribution curve and carbon distribution curve, the relationship between the atomic ratio (atomic concentration) and the etching time, and the atomic ratio (atomic degree) and the relationship from the (four) (nm) of the gas-off layer surface are combined. Figure 12. The "distance (nm)" described on the horizontal axis of the graph of Fig. 12 is a value obtained by calculating the residual time and the (four) velocity. From the results shown in Figs. 12 and 12, it was confirmed that the obtained carbon distribution curve did not have an extreme value. As described above, the first film having the gas barrier layer used in the organic EL device of the present invention has sufficient gas barrier properties and can sufficiently suppress the decrease in gas barrier properties even in the case of bending. Then, an ionic polymer was produced, and an organic EL device was produced using the produced ion compound.重量 The weight average molecular weight (Mw) and number average molecular weight (Μη) of the polymer are determined by gel permeation chromatography (Gpc) (Tong SQh km km HLC-822GGPC:) to obtain polystyrene. The weight average molecular weight and the number average molecular weight are calculated. The m 丨 sample was dissolved in tetrahydrogen occlusion, 323545 165 201228842 became a concentration of about 0.5% by weight, and injected into the gpc at 5 〇. Further, as the mobile phase of GPC, tetrahydrofuran was used to flow at a flow rate of 〇 5 mL/min. The structural analysis of the polymer was carried out by analyzing 1H-NMR using a Varian (3 〇〇 MHz NMR spectrometer manufactured by Varian). Moreover, the sample was dissolved at a concentration of 2 〇 mg/mL to dissolve the sample. The heavy solvent (the solvent in which the hydrogen atom in the solvent molecule is replaced by a heavy hydrogen atom) is carried out. The highest occupied molecular energy of the molecule (HOMO) orbital energy is determined by measuring the ionization potential of the polymer, and the resulting ionization potential is taken as On the other hand, the lowest energy of the polymer does not occupy the orbital energy of the molecular orbital (LUM0), and the energy difference between H〇M〇 and LUM0 is obtained, and the value is compared with the ionization potential measured as described above. The sum is obtained as the orbital energy. The photoelectron spectroscopic device (AC-2 manufactured by Riken Keiki Co., Ltd.) is used for the measurement of the ionization potential. Moreover, the HOMO and LUM0 are inferior to the LUM0, and the ultraviolet light and visible light are used. - Near-infrared spectrophotometer (manufactured by Varian Co., Ltd.: Cary 5E), the absorption spectrum of the polymer was measured, and the absorption end was obtained. φ [Reference Example 1] 2, -> 臭_9, 9-double [3] -ethoxymethyl-4-[2-[2-(2-methoxyethoxy) Synthesis of ethoxy]ethoxy]yl]]- (f luorene) (Compound A) 2' 7-dibromo-9, 9- (52. 5g), ethyl salicylate (154) 8g) and mercaptoacetic acid (1.4g) were placed in a 300 ml flask 'flask environment for nitrogen replacement. Add broth (630 ml) to the mixture and stir the mixture overnight at 751. The mixture was left to cool, added to ice water, and stirred for 1 hour. The solid formed was filtered and washed with 323 545 166 201228842 hot acetonitrile. The solid after washing was dissolved in (iv), and recrystallized from the acetone solution. The solid was filtered, and the obtained solid (62 = 2-[2-(2-decyloxyethoxy) ethoxy b- _ phenyl acid vinegar (86·3 g), carbonic acid _2 (8) and 18-crown _6 (7.2 g) was dissolved in nn dimethyl decylamine (DMF) (670 ml), the solution was transferred to the flask, and the mixture was stirred overnight at 1. 5 Torr. The resulting mixture was cooled to room. Warm, add ice water, and stir for 1 hour. Add chloroform (300 ml) to the reaction solution, and perform liquid separation extraction.

由》農縮溶液’得到2, 7-二漠-9, 9-雙[3-乙氧基幾基-4-[2-[2-(2-曱氧基乙氧基）乙氧基]乙氧基]苯基]_s (化合物 A)(51.2g)。From 2, 7-dimo-9,9-bis[3-ethoxybenzyl-4-[2-[2-(2-decyloxyethoxy)ethoxy] Ethoxy]phenyl]_s (Compound A) (51.2 g).

c2h5ooc H^O{OH2CH2C)3Ci OOC2H5 ’0(CH2CH：P}3CH3C2h5ooc H^O{OH2CH2C)3Ci OOC2H5 ’0(CH2CH:P}3CH3

化合物ACompound A

[參考例2] 2, 7-雙（4,4,5,5-四甲基-1,3, 2-二氧雜硼雜環戊 (以〇又713〇1'〇1&11)-2-基）-9,9-雙[3-乙氧基羰基-4-[2-[2-(2-曱氧基乙氧基）乙氧基]乙氧基]苯基]-苐（化合物B)之合成氮氣環境下，混合化合物A(15g)、雙戊醯二硼（Bis (pinacolato)diboron)(8. 9g)、[1，1’_雙（二苯膦基）二茂鐵（ferrocene)]二氯化把（II)二氯曱烧錯合物（0. 8g)、 Ι,Γ-雙（二苯膦基）二茂鐵（〇. 5g)、乙酸鉀（9.4g)、二噁烷 167 323545 201228842 (400毫升），加熱該混合物至110°C，加熱回流10小時。放置冷卻後，過濾反應液，減壓濃縮濾液。將減壓濃縮的反應混合物以曱醇洗淨3次，得到沈澱物。使沈澱物溶解於曱苯，於溶液添加活性碳，進行攪拌。然後，進行過濾，減壓濃縮濾液，得到2, 7-雙（4, 4, 5, 5-四曱基-1，3, 2-二氧雜硼雜環戊-2-基）-9, 9-雙[3-乙氧基羰基-4-[2- [2-(2- 曱氧基乙氧基）乙氧基]乙氧基]苯基]-苐（化合物B) (11.7g)。[Reference Example 2] 2,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane (〇〇 713〇1'〇1&11)- 2-yl)-9,9-bis[3-ethoxycarbonyl-4-[2-[2-(2-decyloxyethoxy)ethoxy]ethoxy]phenyl]-indole ( Compound B) in a mixed nitrogen atmosphere, compound A (15 g), Bis (pinacolato) diboron (8.9 g), [1,1'-bis(diphenylphosphino)ferrocene (ferrocene)] dichlorinated (II) dichlorohydrazine smoldering complex (0.8 g), hydrazine, hydrazine-bis(diphenylphosphino)ferrocene (〇. 5 g), potassium acetate (9.4 g) Dioxane 167 323545 201228842 (400 ml), the mixture was heated to 110 ° C and heated to reflux for 10 hours. After standing to cool, the reaction liquid was filtered, and the filtrate was concentrated under reduced pressure. The reaction mixture concentrated under reduced pressure was washed three times with methanol to give a precipitate. The precipitate was dissolved in toluene, and activated carbon was added to the solution to stir. Then, filtration was carried out, and the filtrate was concentrated under reduced pressure to give 2,7-bis(4,4,5,5-tetradecyl-1,3,2-dioxaborolan-2-yl)-9. 9-bis[3-ethoxycarbonyl-4-[2-[2-(2-decyloxyethoxy)ethoxy]ethoxy]phenyl]-indole (Compound B) (11.7 g) .

[參考例3] 聚[9, 9-雙[3-乙乳基幾基-4~*[2-[2-(2-甲氡基乙氧基） • 乙氧基]乙氧基]笨基]-第](聚合物A)之合成惰性環境下’混合化合物A(0.55g)、化合物b (0. 61g)、二本膦把（0. Olg)、甲基三辛基氯化銨（奥得里其 (Aldrich)製、商品名 Aliquat336(登記商標））（〇.2〇g)及甲苯（10毫升）’加熱至105°C。於該反應液，滴入2M碳酸鈉水溶液（6毫升），回流8小時。於反應液，添加4_第3 丁基苯硼酸（0. Olg)，回流6小時。然後，於反應液添加二乙基二硫胺曱酸鈉（sodium N，Ν’- diethyldithiocarbamate)水溶液（ι〇毫升、濃度：〇〇5g/ 323545 168 201228842 mL) ’游2小時。將所得混合溶液滴人甲醇期毫升中，攪拌1小時後，過遽析出的沈殿，減壓乾燥2小時後，溶解於四氫料2G毫升。將所得的溶液滴人 2() 3重利乙酸水溶液5G毫升的混合溶射，攪拌丨小時後，過渡析出的歧，將沈麟解於四氫W 2q毫升。將如此所得的溶液滴人甲醇毫升，_ 30分鐘後，過滤析出的沈殿’得到㈣。將所得的固體溶解於四氫料，藉由通過氧化!呂管柱、魏膠管柱精製。從管㈣收的四氮咬喃溶液濃縮後，滴入甲醇⑽毫升）中，過遽析出的固體，使其乾燥。所得的聚[9,9_雙[3_乙氧絲基_4_雙[2_[2_ (2-甲氧基乙氧基）乙氧基]乙氧基]笨基]聚合物a)之產量為520mg。 I合物A的聚苯乙烯換算的數平均分子量為5. 2χι〇4。聚合物Α係由式（Α)所示的構造單元所成。[Reference Example 3] Poly[9,9-bis[3-ethyllacylmethyl-4~*[2-[2-(2-carbamimidyloxy))ethoxymethyl]ethoxy] Synthesis of a mixture of compound A (0.55 g), compound b (0.61 g), diphosphine (0. Olg), methyl trioctyl ammonium chloride (Odrich, trade name Aliquat 336 (registered trademark)) (〇.2〇g) and toluene (10 ml) were heated to 105 °C. To the reaction mixture, a 2M aqueous sodium carbonate solution (6 ml) was added dropwise, and the mixture was refluxed for 8 hours. To the reaction liquid, 4_3 butylbenzeneboronic acid (0. Olg) was added, and the mixture was refluxed for 6 hours. Then, an aqueous solution of sodium sulphate (sodium N, Ν'-diethyldithiocarbamate) (md, concentration: 〇 5 g / 323545 168 201228842 mL) was added to the reaction solution for 2 hours. The resulting mixed solution was added dropwise to methanol in a milliliter period, and after stirring for 1 hour, the precipitate was separated and dried under reduced pressure for 2 hours, and then dissolved in 2 g of tetrahydrogen. The obtained solution was mixed with a mixture of 2 (3 g of acetic acid and 5 g of acetic acid aqueous solution), and after stirring for a few hours, the precipitate was separated, and the solution was dissolved in tetrahydro W 2q ml. The solution thus obtained was dropped into methanol (ML), and after _30 minutes, the precipitated precipitate was filtered to obtain (4). The obtained solid was dissolved in a tetrahydrogen, and purified by oxidation of a ruthenium column and a Wei gum column. After concentrating the tetranitrogenate solution from the tube (iv), it was added dropwise to methanol (10 ml), and the solid which precipitated was dried and dried. The resulting poly[9,9-bis[3-ethoxymethyl- 4-bis[2_[2-(2-methoxyethoxy)ethoxy]ethoxy] phenyl] polymer a) The yield was 520 mg. Iχι〇4。 The polystyrene-equivalent number average molecular weight of the compound I is 5. 2χι〇4. The polymer lanthanide is formed by a structural unit represented by the formula (Α).

〇2H5ooc COOC2H5 〇ί〇Η2ΟΗ2〇)3〇Η3 (A) [實驗例1] 聚合物A的鉋鹽的合成將聚合物A(200mg)放入1〇〇亳升燒瓶，將燒瓶内的環境以氮氣置換。添加四氫呋喃（2〇毫升）及乙醇（2〇毫升），將混合物升溫至55t。於其中，添加氫氧化铯（2〇〇mg)溶解於水（2毫升）之水溶液，在55。(：攪拌6小時。混合物冷 323545 169 201228842 卻至室溫後，減壓蒸餾除去反應溶劑。所生成的固體以水洗淨，以減壓乾燥，得到淡黃色固體（150mg)。藉由NMR(核磁共振）光譜，確認聚合物A内的來自乙酯部位的乙基之訊號完全消失。所得的聚合物A的鉋鹽’稱為共軛高分子化合物1。共輛高分子化合物1係由式（B)所示的構造單元所構成（「全部構造單元中，包含選自式（1)所示的基以及式 (2)所示的基所成群的1種以上的基以及式（3)所示的1種以上的基之構造單元的比例」以及「全部構造單元中式 ® (13)、（15)、（17)及（20)所示的構造單元之比例」為1〇〇莫耳％。）。共軛高分子化合物1的HOMO的執道能量為 -5. 5eV，LUM0的軌道能量為-2. 7eV。〇2H5ooc COOC2H5 〇ί〇Η2ΟΗ2〇)3〇Η3 (A) [Experimental Example 1] Synthesis of Planer Salt of Polymer A Polymer A (200 mg) was placed in a 1 liter flask, and the environment inside the flask was Nitrogen replacement. Tetrahydrofuran (2 mL) and ethanol (2 mL) were added and the mixture was warmed to 55t. Thereto, an aqueous solution of cesium hydroxide (2 〇〇 mg) dissolved in water (2 ml) was added at 55. (Stirring for 6 hours. The mixture was cooled to 323545 169 201228842. After the reaction mixture was cooled to room temperature, the solvent was evaporated to dryness. The NMR spectrum confirmed that the signal of the ethyl group derived from the ethyl ester moiety in the polymer A completely disappeared. The obtained salt of the polymer A was called the conjugated polymer compound 1. The total polymer compound 1 was (B) is a structural unit shown in (B) ("All structural units include one or more groups selected from the group represented by the formula (1) and the group represented by the formula (2), and the formula (3) "The ratio of the structural unit of one or more kinds of bases shown in the above" and "the ratio of the structural units shown by the formulas (13), (15), (17), and (20) of all the structural units are 1" 7eV。 The conjugated polymer compound 1 HOMO of the orbital energy is -5. 5eV, LUM0 orbital energy is -2.7 eV.

[實驗例2] 聚合物A的鉀鹽的合成將聚合物A(200mg)放入1〇〇毫升燒瓶，將燒瓶内的環境以氮氣置換。混合四氫呋喃（2〇毫升）及甲醇（1〇毫升），於混合溶液，添加氫氧化鉀（4〇()mg)溶解於水（2毫升）之水溶液，在65°C攪拌1小時。於反應溶液，添加甲醇50毫升，再在65°C攪拌4小時。混合物冷卻至室溫後，滅壓蒸餾除去反應溶劑。所生成的固體以水洗淨，以減壓乾燥，得到淡黃色固體（131mg)。藉由NMR光譜，確認聚合物A内 323545 170 201228842 的來自乙酯部位的乙基之訊號完全消失。所得的聚合物A 的鉀鹽，稱為共軛高分子化合物2。共軛高分子化合物2 係由式（c)所禾的構造單元所構成（「全部構造單元中，包含選自式（1)所示的基以及式（2)所示的基所成群的1種以上的基以及式（3)所示的1種以上的基之構造單元的比例」以及「全部構造單元中式（13)、（15)、（17)及（20)所示的構造單元之比例」為100莫耳％。）。共軛高分子化合物2 的HOMO的轨道能量為-5· 5eV，LUMO的軌道能量為-2. 7eV。[Experimental Example 2] Synthesis of potassium salt of polymer A Polymer A (200 mg) was placed in a 1 ml flask, and the atmosphere in the flask was replaced with nitrogen. Tetrahydrofuran (2 ml) and methanol (1 ml) were mixed, and a solution of potassium hydroxide (4 mg (mg)) dissolved in water (2 ml) was added to the mixture, and the mixture was stirred at 65 ° C for 1 hour. To the reaction solution, 50 ml of methanol was added, followed by stirring at 65 ° C for 4 hours. After the mixture was cooled to room temperature, the reaction solvent was evaporated under reduced pressure. The resulting solid was washed with water and dried under reduced pressure to give pale yellow solid (131mg). From the NMR spectrum, it was confirmed that the signal of the ethyl group from the ethyl ester moiety of 323545 170 201228842 in the polymer A completely disappeared. The potassium salt of the obtained polymer A is referred to as a conjugated polymer compound 2. The conjugated polymer compound 2 is composed of a structural unit of the formula (c) ("all structural units include a group selected from the group represented by the formula (1) and a group represented by the formula (2)). The ratio of one or more kinds of bases and one or more types of structural units represented by formula (3) and the structural units shown by formulas (13), (15), (17), and (20) in all structural units The ratio is 100% by mole.). The ergonomic energy of the HOMO of the conjugated polymer compound 2 is -5·5 eV, and the orbital energy of LUMO is -2.7 eV.

聚合物A的鈉鹽的合成將聚合物A(20〇mg)放入100毫升燒瓶，將燒瓶内的環 i兄以氮氣置換。混合四氫π夫喃（20毫升）及曱醇（1〇毫升），Synthesis of sodium salt of polymer A Polymer A (20 mg) was placed in a 100 ml flask, and the ring in the flask was replaced with nitrogen. Mix tetrahydropyran (20 ml) and decyl alcohol (1 ml),

於混合溶液，添加氫氧化鈉（26Qmg)溶解於水（2毫升）之水溶液，在65t攪拌丨小時。於反應溶液，添加甲醇3〇亳升，再在阶授拌4小時。⑨合物冷卻至室錢，減壓蒸德除去反躲劑。所生制_财洗淨，以減壓乾燥，、付到淡只色固體（123mg)。藉由醜光譜確認聚合物的來:乙酯部位的乙基之訊號完全消失的稱為轉高分子化合物3。共輛高分子化合。係由式⑻所_構造單元所構成（「全部構造單元令，包 323545 171 201228842 含選自式（1)所示的基以及式（2)所示的基所成群的1種以上的基以及式（3)所示的基之構造單元的比例」以及「全部構造單元中式（13)、（15)、（17)及（20)所示的構造單元之比例」為1 〇〇莫耳％。）。共輛高分子化合物3的homo的軌道能量為-5. 6eV，LUM0的軌道能量為-2. 8eV。To the mixed solution, sodium hydroxide (26Qmg) was added to an aqueous solution of water (2 ml), and stirred at 65 ° for several hours. To the reaction solution, methanol was added to 3 liters, and then mixed for 4 hours. The compound was cooled to room temperature, and the anti-doping agent was removed by steaming under reduced pressure. The product was washed, dried under reduced pressure, and applied to a pale solid (123 mg). It was confirmed by the ugly spectrum that the signal of the ethyl group at the ethyl ester site completely disappeared was called the polymer compound 3. A total of polymer compound. It is composed of the structural unit of the formula (8) ("All structural unit commands, package 323545 171 201228842 contains one or more groups selected from the group represented by the formula (1) and the group represented by the formula (2). And the ratio of the structural unit of the base represented by the formula (3) and the ratio of the structural unit shown by the formula (13), (15), (17), and (20) in all the structural units are 1 〇〇 Moule %.). 8eV。 The orbital energy of the total polymer compound 3 is -5. 6eV, the orbital energy of LUM0 is -2. 8eV.

[實驗例4] 聚合物A的銨鹽的合成將聚合物A(200mg)放入1〇〇毫升燒甑，將燒瓶内的環境以氮氣置換。混合四氫π夫喃（2〇毫升）及甲醇（15毫升），於混合溶液，添加氫氧化四曱基銨（5〇mg)溶解於水（1毫升）之水溶液，在65°C攪拌6小時《於反應溶液，添加氫氧化四曱基銨（50mg)溶解於水（1毫升）之水溶液，再在邸^攪拌4小時。混合物冷卻至室溫後，減壓蒸餾除去反應溶劑。所生成的固體以水洗淨，以減壓乾燥，得到淡黃色固體 (150mg)。藉由NMR光譜，確認聚合物a内的來自乙酯部位的乙基之訊號90%消失。所得的聚合物a的銨鹽，稱為共軛高分子化合物4。共軛高分子化合物4係由式（E)所示的構造單元所構成（「全部構造單元中，包含選自式（1)所承的基以及式（2)所示的基所成群的1種以上的基以及式（3) 所不的1種以上的基之構造單元的比例」以及「全部構造 172 323545 201228842 單元中式（13)、（15)、（17)及（20)所示的構造單元之比例_ 為90莫耳％。）。共軛高分子化合物4的HOMO的軌道能量為-5. 6eV，LUM0的軌道能量為-2. 8eV。[Experimental Example 4] Synthesis of ammonium salt of polymer A Polymer A (200 mg) was placed in 1 mL of a crucible, and the atmosphere in the flask was replaced with nitrogen. Mix tetrahydropyrrole (2 ml) and methanol (15 ml), and add a solution of tetramethylammonium hydroxide (5 mg) dissolved in water (1 ml) in a mixed solution, and stir at 65 °C. Hour "In the reaction solution, an aqueous solution of tetramethylammonium hydroxide (50 mg) dissolved in water (1 ml) was added, and the mixture was stirred for 4 hours. After the mixture was cooled to room temperature, the reaction solvent was evaporated under reduced pressure. The resulting solid was washed with water and dried under reduced pressure toiel From the NMR spectrum, it was confirmed that 90% of the signal of the ethyl group derived from the ethyl ester moiety in the polymer a disappeared. The obtained ammonium salt of the polymer a is referred to as a conjugated polymer compound 4. The conjugated polymer compound 4 is composed of a structural unit represented by the formula (E) ("all structural units include a group selected from the group consisting of the formula (1) and the group represented by the formula (2). "The ratio of one or more types of structural units of the base and the one or more types of the formula (3)" and "all structures 172 323545 201228842 units shown by the formulas (13), (15), (17), and (20) The ergonomic energy of the conjugated polymer compound 4 is -5. 6eV, and the orbital energy of LUM0 is -2. 8eV.

[參考例4][Reference Example 4]

2, 7-雙[7-(4-曱基苯基）-9, 9-二辛基荈基]-9, 9-雙[3-乙氧基羰基-4-[2-[ 2-(2-曱氧基乙氧基）乙氧基]乙氧基]苯基]-苐（聚合物B)之合成惰性環境下，混合化合物A(0. 52g)、2, 7-雙（1，3, 2-二氧雜硼雜環戊-2-基）-9,9-二辛基苐（1.29g)、三苯膦鈀 (〇.0087g)、曱基三辛基氯化銨（奥得里其（△丨如“…製、商品名Aliquat336(登記商標））（〇.2〇g)、甲苯（1〇毫升）及 2M碳酸鈉水溶液（1〇毫升），加熱至。使反應液反應 3·5小時。然後，於反應液，添加對—溴甲苯（〇 68g)，再 =應2. 5小時。反應後，冷卻反應液至室溫，添加乙酸乙，50毫升/蒸顧水50毫升，除去水層。再添加蒸顧水5〇宅升，除去水層後’添加硫酸鎂作為乾燥劑。過濾不溶物，有機溶#1 ’得_渣。所得的_ ’再溶解於刪〇笔升’添加飽和二乙基二硫胺甲酸納（崎咖N N，_ ^thyldithiocarbamateR 2 毫升，_ 3〇分鐘後，除有機溶劑。藉由通過氧魅管柱（展開溶劑己燒：乙酸乙 323545 173 201228842 酉曰二1 : 1，v/v)精製，過濾析出的沈澱，減壓乾燥12小時後，％到2,7-雙[7-(4-曱基苯基）一99__二辛基苐_2_ 基]-9, 9-雙[3-乙氧基羰基—4-[2-[2-(2-甲氧基乙氧基）乙氧基]乙氧基]苯基]-第（聚合物B)524mg。聚合物B的聚苯乙烯換算的數平均分子量為2. ΟχΜ、聚合物B係由式（F)所示。2,7-bis[7-(4-mercaptophenyl)-9,9-dioctylfluorenyl]-9,9-bis[3-ethoxycarbonyl-4-[2-[ 2-( Synthesis of 2-nonyloxyethoxy)ethoxy]ethoxy]phenyl]-indole (Polymer B) In an inert environment, compound A (0.52 g), 2, 7-bis (1, 3,2-dioxaborolan-2-yl)-9,9-dioctylfluorene (1.29g), triphenylphosphine palladium (〇.0087g), decyltrioctyl ammonium chloride得里其(△丨, such as "products, trade name Aliquat336 (registered trademark)) (〇.2〇g), toluene (1 〇 ml) and 2M sodium carbonate aqueous solution (1 〇 ml), heated to the reaction solution The reaction was carried out for 3.5 hours. Then, p-bromotoluene (〇68g) was added to the reaction solution, and then the reaction time was 2.5 hours. After the reaction, the reaction solution was cooled to room temperature, and ethyl acetate was added thereto, 50 ml/vaporized water. 50 ml, remove the water layer. Add steamed water to 5 liters of house liters, remove the water layer, then add magnesium sulphate as a desiccant. Filter insoluble matter, organic solution #1 'to get _ slag. The resulting _ 'redissolved in the deletion 〇 pen liter 'add saturated sodium diethyldithiocarbamate (saki NN, _ ^thyldithiocarbamateR 2 ml, _ 3 〇 minutes In addition to the organic solvent, the precipitate was purified by oxidizing the column (expanded solvent: acetic acid: 323545 173 201228842 酉曰2: 1, v/v), and the precipitate was filtered and dried under reduced pressure for 12 hours. 2,7-bis[7-(4-mercaptophenyl)-99__dioctyl苐_2_yl]-9,9-bis[3-ethoxycarbonyl-4-[2-[2-( 2-methoxyethoxy)ethoxy]ethoxy]phenyl]- (Polymer B) 524 mg. The polystyrene-equivalent number average molecular weight of the polymer B was 2. ΟχΜ, polymer B system It is shown by the formula (F).

聚合物B的鉋鹽的合成將聚合物B(262mg)放入1〇〇毫升燒瓶，將燒瓶内的環境以氬氣置換。於其中，添加四氫呋喃（1〇毫升）及曱醇（15 毫升），將混合物升溫至55°〇於其中，添加氫氧化鉋（341mg) 溶解於水（1毫升）之水溶液，在55°C攪拌5小時。冷卻所得的混合物至室溫後’減壓蒸德除去反應溶劑。所生成的固體以水洗淨’以減壓乾综’付到淡黃色固體（2 5 0 mg)。藉由NMR光譜，確認來自乙酯部位的乙基之訊號完全消失。所得的聚合物B的铯鹽，稱為共輛高分子化合物5。共1¾ 1¾分子化合物5係由式（G)所示（「全部構造單元中，包含選自式（1)所示的基以及式（2)所示的基所成群的1種以上的基以及式（3)所示的1種以上的基之構造單元的比例」以及「全部構造單元中式（13)、（15)、（17)及（20)所示的構造單元之比例」’在小數第2位四捨五入為33. 3莫耳％。）。 323545 174 201228842 共軛高分子化合物5的HOMO的軌道能量為-5. 6eV，LUMO 的執道能量為-2. 6eV。Synthesis of Planar Salt of Polymer B Polymer B (262 mg) was placed in a 1 ml flask, and the atmosphere in the flask was replaced with argon. To the mixture, tetrahydrofuran (1 ml) and decyl alcohol (15 ml) were added, and the mixture was warmed to 55 °, and then added to a water-soluble (1 ml) aqueous solution and stirred at 55 ° C. 5 hours. After cooling the obtained mixture to room temperature, the reaction solvent was removed under reduced pressure. The resulting solid was washed with water to give a pale yellow solid (250 mg). From the NMR spectrum, it was confirmed that the signal of the ethyl group derived from the ethyl ester site completely disappeared. The obtained phosphonium salt of the polymer B is referred to as a co-polymer compound 5. A total of 1⁄4 13 of the molecular compound 5 is represented by the formula (G) ("all structural units include one or more groups selected from the group represented by the formula (1) and the group represented by the formula (2)) And the ratio of the structural unit of the one or more types of bases represented by the formula (3) and the ratio of the structural units represented by the formulas (13), (15), (17), and (20) in all the structural units. The second decimal place is rounded to 33. 3 moles.). 6eV。 323545 174 201228842 conjugated polymer compound 5 HOMO orbital energy is -5. 6eV, LUMO's ego energy is -2.6.

CflH17CaH^7 +CsOOC H3C(OH2CH2C)3CflH17CaH^7 +CsOOC H3C(OH2CH2C)3

COOCs 令 >(CH2CH20>3CH3COOCs Order >(CH2CH20>3CH3

[參考例5] 聚合物C的合成惰性環境下，混合化合物A(0.40g)、化合物B • (〇.49g)、N，N’-雙（4-溴苯基）-N，N’-雙（4-第 3 丁基-2, 6- 二曱基苯基）1，4-苯二胺（35mg)、三苯膦鈀（8mg)、甲基三辛基氯化銨（奥得里其（Aldrich)製、商品名Aliquat336(登記商標））（0· 20g)及甲苯（10毫升），加熱至1〇5。〇。於該反應液’滴入2M破酸納水溶液（6毫升），回流8小時。於反應液’添加苯棚酸（0. 01 g) ’回流6小時。然後，添加二乙基二硫胺甲酸鈉（sodium N，N，-diethyldithiocarbamate) 水溶液（10毫升、濃度：〇. 〇5g/mL) ’攪拌2小時。將混合溶液滴入曱醇300毫升中，攪拌1小時後，過濾析出的沈殿，減壓乾燥2小時，使其溶解於四氫咬π南毫升。將所得的溶液滴入曱醇120毫升及3重量％乙酸水溶液50毫升的混合溶劑中，攪拌1小時後，過濾析出的沈澱，使其溶解於四氫呋喃20毫升。將如此所得的溶液滴入甲醇2〇〇毫升，攪拌30分鐘後，過濾析出的沈澱，得到固體。將所得的固體溶解於四氫呋喃’藉由通過氧化鋁管柱、矽凝膠管枉精製。濃縮從管柱回收的四氫呋喃溶液後，將其滴入甲 175 323545 201228842 使其乾燥。所得的固[Reference Example 5] Synthesis of Polymer C In a mixed inert atmosphere, Compound A (0.40 g), Compound B (〇.49 g), N,N'-bis(4-bromophenyl)-N,N'- Bis(4-tert-butyl-2,6-diamidinophenyl)1,4-phenylenediamine (35 mg), triphenylphosphine palladium (8 mg), methyltrioctyl ammonium chloride (Odley) It was made by Aldrich, trade name Aliquat 336 (registered trademark) (0·20 g) and toluene (10 ml), and heated to 1〇5. Hey. A 2 M aqueous sodium sulphate solution (6 ml) was added dropwise to the reaction mixture, and refluxed for 8 hours. The benzene succinic acid (0.11 g) was added to the reaction solution to reflux for 6 hours. Then, an aqueous solution of sodium succinate (sodium N,N,-diethyldithiocarbamate) (10 ml, concentration: 〇. 〇 5 g/mL) was added and stirred for 2 hours. The mixed solution was added dropwise to 300 ml of methanol, and after stirring for 1 hour, the precipitated precipitate was filtered, dried under reduced pressure for 2 hours, and dissolved in tetrahydrogen π nan liter. The obtained solution was added dropwise to a mixed solvent of 120 ml of decyl alcohol and 50 ml of a 3 wt% aqueous acetic acid solution, and the mixture was stirred for 1 hour, and then the precipitate was filtered and dissolved in 20 ml of tetrahydrofuran. The solution thus obtained was added dropwise to 2 liters of methanol, stirred for 30 minutes, and then the precipitate was filtered to give a solid. The obtained solid was dissolved in tetrahydrofuran, and purified by passing through an alumina column and a gel column. After concentrating the tetrahydrofuran solution recovered from the column, it was dropped into a 175 323545 201228842 and allowed to dry. Obtained solid

聚合物C的铯鹽的合成醇（200毫升）中，過濾析出的固體’ 體（聚合物C)之產量為526mg。將聚合物C(200mg)放入1〇〇毫升燒瓶，將燒瓶内的環境以氮氣置換。添加四氫呋喃（2〇毫升）及甲醇（2()毫升）後混合。於混合溶液，添加氫氧化铯（2〇〇mg)溶解於水（2 •毫升）之水溶液，在65它攪拌1小時。於反應溶液，添加曱醇30毫升’再在65°C攪拌4小時。冷卻混合物至室溫後，減壓蒸德除去反應溶劑。所生成的固體以水洗淨，以減壓乾燥，得到淡黃色固體（150mg)。藉由NMR光譜，確認聚合物C内的來自乙酯部位的乙基之訊號完全消失。所得的聚合物C的絶鹽，稱為共軛高分子化合物6。共軛高分子化合物6係由式（I)所示的構造單元所構成（「全部構造單元中’包含選自式（1)所示的基以及式（2)所示的基所成 176 3235^5 201228842 群的1種以上的基以及式（3)所示的1種以上的基之構造單元的比例」以及「全部構造單元中式（13)、（15)、（丨7)及 (20)所示的構造單元之比例」為95莫耳％。）。共軛高分子化合物6的HOMO的軌道能量為-5· 3eV ’ LUM0的執道能量為-2. 6eV。Synthesis of the phosphonium salt of the polymer C The yield of the solid body (polymer C) which was precipitated by filtration in an alcohol (200 ml) was 526 mg. Polymer C (200 mg) was placed in a 1 ml flask, and the atmosphere in the flask was replaced with nitrogen. Add tetrahydrofuran (2 ml) and methanol (2 (ml)) and mix. To the mixed solution, an aqueous solution of cesium hydroxide (2 〇〇 mg) dissolved in water (2 ml) was added, and it was stirred at 65 for 1 hour. To the reaction solution, 30 ml of decyl alcohol was added, and the mixture was further stirred at 65 ° C for 4 hours. After cooling the mixture to room temperature, the reaction solvent was removed under reduced pressure. The resulting solid was washed with water and dried under reduced pressure toiel It was confirmed by NMR spectrum that the signal of the ethyl group derived from the ethyl ester moiety in the polymer C completely disappeared. The resulting salt of the polymer C is referred to as a conjugated polymer compound 6. The conjugated polymer compound 6 is composed of a structural unit represented by the formula (I) ("in all structural units" includes a group selected from the group represented by the formula (1) and a group represented by the formula (2). ^5 201228842 The ratio of one or more kinds of groups of the group and the structural unit of one or more kinds of the bases represented by the formula (3)" and "all the structural units (13), (15), (丨7), and (20) The ratio of the structural unit shown is "95 mol%.". The conjugated polymer compound 6 has an orbital energy of -5·3eV ' LUM0 of -2. 6eV.

[參考例6] 聚合物D的合成惰性環境下，混合化合物A(0. 55g)、化合物B (0.67g)、Ν,Ν’-雙（4-溴苯基）-N，N’-雙（4-第 3 丁基-2,6-二曱基苯基）1，4-苯二胺（0.038g)、3,7-二溴-N-(4-正丁基苯基）吩噻嗪（Phenoxazine)O. 009g、三苯膦把（0· 〇lg)、甲 # 基三辛基氯化銨（奥得里其（Aldrich)製、商品名[Reference Example 6] Synthesis of Polymer D In a mixed inert environment, Compound A (0.55 g), Compound B (0.67 g), hydrazine, Ν'-bis(4-bromophenyl)-N, N'-double were mixed. (4-tert-butyl-2,6-dimercaptophenyl)1,4-phenylenediamine (0.038 g), 3,7-dibromo-N-(4-n-butylphenyl)phenothiphenyl Phenoxazine O. 009g, triphenylphosphine (0· 〇lg), A# trioctyl ammonium chloride (Aldrich), trade name

Aliquat336(登記商標））（〇. 20g)及曱笨（10毫升），加熱至 105°C。於該反應液，滴入2M碳酸鈉水溶液（6毫升），回流2小時。於反應液’添加苯硼酸（〇. 〇〇4g)，回流6小時。然後’添加二乙基二硫胺曱酸鈉（sodium N，N，-diethyldithiocarbamate)水溶液（i〇毫升、濃度：〇〇5g/ mL)，攪拌2小時。將混合溶液滴入曱醇3〇〇毫升中，攪拌 1小時後，過濾析出的沈澱，減壓乾燥2小時，溶解於四 323545 177 201228842 氫呋喃20毫升。將所得的溶液滴入甲醇12〇毫升及3重量 %乙酸水溶液50毫升的混合溶射，龄丨小時後，過滤析出的沈殿’溶解於四氫M 2G毫升。將如此所得的溶液肩入曱醇2GG毫升’授拌3〇分鐘後，過滤析出的沈殿，得到固體。將所得的固體溶解於四氫吱喃，藉由通過氧化紹管柱、矽凝膠管柱精製。濃縮從管柱回收的四氫呋喃溶液後，滴入甲醇（200毫升）中，過濾析出的固體，使其乾燥。所得的固體（聚合物D)之產量為59〇mg。聚合物D的聚苯乙烯換算的數平均分子量為2. 7χ1〇4。聚合物D係由式（J)所示的構造單元所成。3, 7_二溴_Ν_(4_ 正丁基苯基）吩噻嗪（Phenoxazine)可藉由曰本專利 JP2004137456記載之方法合成。Aliquat 336 (registered trademark)) (〇. 20g) and 曱 (10 ml), heated to 105 °C. To the reaction mixture, a 2M aqueous sodium carbonate solution (6 ml) was added dropwise and refluxed for 2 hr. To the reaction solution was added phenylboric acid (〇. 4 g), and refluxed for 6 hours. Then, an aqueous solution of sodium dithionate (sodium N,N,-diethyldithiocarbamate) (i liter, concentration: 〇 5 g / mL) was added and stirred for 2 hours. The mixed solution was added dropwise to 3 ml of methanol, and after stirring for 1 hour, the precipitate which precipitated was filtered, dried under reduced pressure for 2 hours, and dissolved in 20 323 545 177 201228842 Hydrofuran 20 ml. The resulting solution was added dropwise to a mixed solution of 12 ml of methanol and 50 ml of a 3 wt% aqueous acetic acid solution. After aging, the precipitated precipitate was dissolved in tetrahydro M 2 G ml. The solution thus obtained was poured into 2 GG ml of sterol for 3 minutes, and the precipitated precipitate was filtered to obtain a solid. The obtained solid was dissolved in tetrahydrofuran, and purified by oxidizing the column and the ruthenium gel column. After concentrating the tetrahydrofuran solution recovered from the column, it was added dropwise to methanol (200 ml), and the precipitated solid was filtered and dried. The yield of the obtained solid (Polymer D) was 59 〇 mg. Χ1〇4。 The polystyrene-equivalent number average molecular weight of the polymer D is 2. 7χ1〇4. The polymer D is formed of a structural unit represented by the formula (J). 3,7-Dibromo-indole-(4-butylphenyl)phenothiazine (Phenoxazine) can be synthesized by the method described in JP2004137456.

聚合物D的絶鹽的合成Synthesis of the salt of polymer D

將聚合物D(200mg)放入100毫升燒瓶，進行氮氣置換。混合四氫吱喃（15毫升）及甲醇（1〇毫升）。於混合溶液’添加氫氧化铯（360mg)溶解於水（2毫升）之水溶液，在 65 C搜掉3小時。於反應溶液，添加曱醇1〇毫升，再在 65°C攪拌4小時。冷卻混合物至室溫後，減壓蒸餾除去反應溶劑。所生成的固體以水洗淨，以減壓乾燥，得到淡黃 178 323545 201228842 色固體（210mg)。藉由_R光譜，確認聚合物D内的來2，酯部位的乙基之訊號完全消失。所得的聚合物D的銘）稱為共輛高分子化合物7。共軛高分子化合物7係由所示的構造單元所構成（「全部構造單元中，包含選自""，反所示的基以及式（2)所示的基所成群的1種以上的基 r 式（3)所示的1種以上的基之構造單元的比例」以及〃/之構造單元中式（13)、（15)、（Π)及（20)所示的構造草元比例」為90莫耳％。）。共輛高分子化合物7的Polymer D (200 mg) was placed in a 100 ml flask and purged with nitrogen. Tetrahydrofuran (15 ml) and methanol (1 ml) were mixed. An aqueous solution of cesium hydroxide (360 mg) dissolved in water (2 ml) was added to the mixed solution, and the mixture was collected at 65 C for 3 hours. To the reaction solution, 1 ml of methanol was added, followed by stirring at 65 ° C for 4 hours. After cooling the mixture to room temperature, the reaction solvent was distilled off under reduced pressure. The resulting solid was washed with water and dried under reduced pressure to give pale yellow 178 323545 201228842 color solid (210 mg). By the _R spectrum, it was confirmed that the signal of the ethyl group in the polymer D was completely disappeared. The obtained polymer D is referred to as a total of polymer compound 7. The conjugated polymer compound 7 is composed of the structural unit shown ("all structural units include one selected from the group consisting of "", the opposite and the group represented by the formula (2). The ratio of the structural unit of one or more kinds of bases represented by the above formula (3) and the structural unit of the formulas (13), (15), (Π), and (20) in the structural unit of 〃/ The ratio is 90% by mole.). A total of polymer compound 7

遒能量為-5. 3eV ’ LUMO的軌道能量為-2.4eV。The energy of the 遒 is -5. 3eV ’ LUMO has an orbital energy of -2.4 eV.

(K) c4h9 [參考例7] 聚合物E的合成惰性環境下，混合化合物A(0. 37g)、化合物B Φ (〇. 82这）、1，3-二溴苯（0· 09g)、三苯膦鈀（〇. 〇lg)、曱基三辛基鼠化錢（奥得里其（Aldrich)製、商品名A1 iquat336(登記商標））（0.20g)及甲苯（10毫升），加熱至l〇5°C。於該反應液，滴入2M碳酸鈉水溶液（6毫升），回流7小時。於反應液，添加苯硼酸（0. 002g)，回流10小時。然後，添加二乙基二硫胺曱酸納（sc?dium Ν, Ν’ - diethyldithiocarbamate)水溶液（10 毫升、濃度：〇.〇5g/ mL)，攪拌1小時。將混合溶液滴入曱醇3〇〇毫升，攪拌1 179 323545 201228842 小時後，過濾析出的沈澱，減壓乾燥2小時，溶解於四氫呋喃20毫升。將所得的溶液滴入甲醇12〇毫升及3重量％乙酸水溶液50毫升的混合溶劑中，攪拌η、時後，過滤析出的沈澱，溶解於四氩呋喃2〇毫升。將如此所得的溶液滴入曱醇200冑升’攪拌3〇分鐘後，過遽析出的沈殿，得到固體。將所得的ϋ體溶解於四氫W，藉由通過氧化銘管柱、矽凝膠官柱精製。濃縮從管杈回收的四氫呋喃溶液後，滴入曱醇（200毫升）中’過滤析出的固體，使其乾燥。所得的固體（聚合物Ε)之產量為293mg。，、聚合物E的聚苯乙烯換算的數平均分子量為18χΐ〇4。聚合物Ε係由式（L)所示的構造單元所成。(K) c4h9 [Reference Example 7] Synthesis of Polymer E In a mixed inert environment, compound A (0.33 g), compound B Φ (〇. 82), 1,3-dibromobenzene (0·09 g), Triphenylphosphine palladium (〇. 〇lg), decyl trioctyl ratification (made by Aldrich, trade name A1 iquat336 (registered trademark)) (0.20 g) and toluene (10 ml), heated To l〇5 °C. To the reaction solution, a 2M aqueous sodium carbonate solution (6 ml) was added dropwise and refluxed for 7 hr. To the reaction solution, phenylboric acid (0.02 g) was added and refluxed for 10 hours. Then, an aqueous solution of sodium dithiodithioacetate (10 μm, concentration: 〇.〇5 g/mL) was added and stirred for 1 hour. The mixed solution was added dropwise to 3 ml of methanol, and after stirring for 1 179 323545 201228842 hours, the precipitate which precipitated was filtered, dried under reduced pressure for 2 hours, and dissolved in 20 ml of tetrahydrofuran. The obtained solution was added dropwise to a mixed solvent of 12 ml of methanol and 50 ml of a 3 wt% aqueous acetic acid solution, and after stirring, the precipitate was filtered, and dissolved in 2 ml of tetrahydrofuran. The solution thus obtained was added dropwise to 200 liters of decyl alcohol. After stirring for 3 minutes, the precipitate was precipitated to obtain a solid. The obtained steroid was dissolved in tetrahydrogen W, and purified by oxidizing the column and the ruthenium gel column. After concentrating the tetrahydrofuran solution recovered from the hydrazine, it was added dropwise to decyl alcohol (200 ml), and the precipitated solid was filtered and dried. The yield of the obtained solid (polymer oxime) was 293 mg. The polystyrene-equivalent number average molecular weight of the polymer E is 18χΐ〇4. The polymer lanthanide is formed by the structural unit represented by the formula (L).

聚合物Ε的絶鹽的合成將聚合物E(200mg)放入100毫升燒瓶，將燒瓶内的環境以氮氣置換。混合四氫呋喃（10毫升）及甲醇（5毫升）。於混合溶液，添加氫氧化鉋（200mg)溶解於水（2毫升）之水溶液’在65°C攪拌2小時。於反應溶液，添加甲醇1〇毫升，再在65°C攪拌5小時。冷卻混合物至室溫後，減壓蒸餾除去反應溶劑。所生成的固體以水洗淨，以減壓乾燥， 323545 180 201228842 得到淡黃色固體（17〇mg)。藉由NMR光譜’碟認聚合物E内的來自乙酯部位的乙基之訊號完全消失。所得的聚合物E 的铯鹽，稱為兴輛高分子化合物8。共輛高分子化合物8 係由式（M)所示的構造單元所構成（「全部構造單元中，包含選自式（1)所示的基以及式（2)所示的基所成群的1種以上的基以及式（3)所示的1種以上的基之構造單元的比例」以及「全部構造單元中式（13)、（15)、（17)及（20)所示的構造單元之比例」為75莫耳％。）。共軛高分子化合物8的 • HOMO的執道能量為-5. 6eV，LUMO的執道能量為-2. 6eV。Synthesis of the sulphate of the polymer oxime Polymer E (200 mg) was placed in a 100 ml flask, and the atmosphere in the flask was replaced with nitrogen. Tetrahydrofuran (10 ml) and methanol (5 ml) were combined. To the mixed solution, a water-soluble solution (200 mg) dissolved in water (2 ml) was added, and the mixture was stirred at 65 ° C for 2 hours. To the reaction solution, methanol was added in an amount of 1 Torr, and stirred at 65 ° C for 5 hours. After the mixture was cooled to room temperature, the reaction solvent was evaporated under reduced pressure. The resulting solid was washed with water and dried under reduced pressure, 323 545 180 201228842. The signal from the ethyl ester moiety in the polymer E was completely disappeared by the NMR spectrum. The obtained phosphonium salt of the polymer E is referred to as a polymer compound 8. The total polymer compound 8 is composed of a structural unit represented by the formula (M) ("all structural units include a group selected from the group represented by the formula (1) and a group represented by the formula (2)). The ratio of one or more kinds of bases and one or more types of structural units represented by formula (3) and the structural units shown by formulas (13), (15), (17), and (20) in all structural units The ratio is "75 mol%.". 6eV。 The conjugated polymer compound 8 • HOMO's ego energy is -5. 6eV, LUMO's ego energy is -2.6e.

[參考例8] 聚合物F的合成惰性環境下，混合化合物B(l.Olg)、1,4-二漠-2,3,5,6-四氟苯（0.30叾）、三苯膦鈀（0.022)、甲基三辛基氣化銨（奥得里其（Aldrich)製、商品名Aliquat336(登記商標））（0.20g)及甲苯（10毫升），加熱至105°C。於該反應液’滴入2M碳酸鈉水溶液（6毫升），回流4小時。於反應液’添加苯硼酸（0· 002g)，回流4小時。然後，於反應液，添加二乙基二硫胺甲酸鈉（sodium N，N，-diethyldithiocarbamate)水溶液（10 毫升、濃度：0.05g/ 181 323545 201228842 mL)，攪拌1小時。將混合溶液滴入曱醇3〇〇毫升，攪拌1 小時後，過濾析出的沈澱，減壓乾燥2小時，溶解於四氫呋喃2卩毫升。將所得的溶液滴入甲醇12〇毫升及3重量％乙酸水溶液50毫升的混合溶劑中，攪拌丨小時後，過濾析出的沈澱，溶解於四氫呋喃2〇毫升。將如此所得的溶液滴入曱醇200毫升，攪拌3〇分鐘後，過濾析出的沈澱，得到固體。將所得的固體溶解於四氫呋喃/乙酸乙酯（1/1(體積比））的混合溶劑，藉由通過氧化鋁管柱、矽凝膠管柱精製。濃縮從管柱回收的四氫呋喃溶液後，將其滴入曱醇（2〇〇毫升）中，過濾析出的固體，使其乾燥。所得的固體（聚合物 F)之產量為343mg。聚合物F的聚笨乙烯換算的數平均分子量為6 〇χ1〇4。聚合物F係由式（Ν)所示的構造單元所成。[Reference Example 8] Synthesis of Polymer F In a mixed inert environment, compound B (1. Olg), 1,4-dimo-2, 3,5,6-tetrafluorobenzene (0.30 Å), triphenylphosphine palladium (0.022), methyl trioctyl ammonium hydride (manufactured by Aldrich, trade name Aliquat 336 (registered trademark)) (0.20 g) and toluene (10 ml) were heated to 105 °C. A 2 M aqueous sodium carbonate solution (6 ml) was added dropwise to the mixture, and the mixture was refluxed for 4 hr. Phenylboronic acid (0·002 g) was added to the reaction solution, and refluxed for 4 hours. Then, an aqueous solution of sodium sodium dithionate (sodium N,N,-diethyldithiocarbamate) (10 ml, concentration: 0.05 g / 181 323545 201228842 mL) was added to the reaction mixture, and the mixture was stirred for 1 hour. The mixed solution was added dropwise to 3 ml of methanol, and after stirring for 1 hour, the precipitate which precipitated was filtered, dried under reduced pressure for 2 hours, and dissolved in 2 ml of tetrahydrofuran. The obtained solution was added dropwise to a mixed solvent of 12 ml of methanol and 50 ml of a 3 wt% aqueous acetic acid solution, and the mixture was stirred for a few hours, and the precipitate was filtered and dissolved in 2 ml of tetrahydrofuran. The solution thus obtained was added dropwise to 200 ml of decyl alcohol, and after stirring for 3 minutes, the precipitate which precipitated was filtered to obtain a solid. The obtained solid was dissolved in a mixed solvent of tetrahydrofuran/ethyl acetate (1/1 (by volume)), and purified by passing through an alumina column and a hydrazine gel column. After concentrating the tetrahydrofuran solution recovered from the column, it was dropped into decyl alcohol (2 Torr), and the precipitated solid was filtered and dried. The yield of the obtained solid (Polymer F) was 343 mg. The polystyrene-converted number average molecular weight of the polymer F was 6 〇χ1〇4. The polymer F is formed of a structural unit represented by the formula (Ν).

[實驗例9] 聚合物F的鉋鹽的合成將聚合物F(150mg)放入100毫升燒瓶，將燒瓶内的環境以氮氣置換。混合四氫呋喃（1〇毫升）及曱醇（5毫升）。於混合溶液，添加氫氧化铯（26〇mg)溶解於水（2毫升）之水 >谷液’在65C携拌2小時。於反應溶液，添加甲醇毫 323545 182 201228842 升，再在65°C攪拌5小時。冷卻混合物至室温後，減壓蒸餾除去反應溶劑。所生成的固體以水洗淨，以減壓乾燥，得到淡黃色固體（130mg)。藉由NMR光譜，確認聚合物F内的來自乙酯部位的乙基之訊號完全消失。所得的聚合物F 的鉋鹽’稱為并軛高分子化合物9。共軛高分子化合物9 係由式（0)所示的構造單元所構成（「全部構造單元中，包含選自式（1)所示的基以及式（2)所示的基所成群的1種以上的基以及式（3)所示的1種以上的基之構造單元的比例」以及「全部構造單元中式（13)、（15)、（π)及（20)所示的構造早元之比例」為75莫耳％。）。共輛高分子化合物9的 HOMO的軌道能量為-5. 9eV ’ LUM0的軌道能量為-2. 8eV。[Experimental Example 9] Synthesis of planer salt of polymer F Polymer F (150 mg) was placed in a 100 ml flask, and the atmosphere in the flask was replaced with nitrogen. Tetrahydrofuran (1 mL) and decyl alcohol (5 mL) were combined. To the mixed solution, cesium hydroxide (26 〇 mg) dissolved in water (2 ml) of water > gluten solution was stirred at 65 C for 2 hours. To the reaction solution, methanol 323545 182 201228842 liter was added, followed by stirring at 65 ° C for 5 hours. After the mixture was cooled to room temperature, the reaction solvent was evaporated under reduced pressure. The resulting solid was washed with water and dried under reduced pressure to give a pale yellow solid (130 mg). From the NMR spectrum, it was confirmed that the signal of the ethyl group derived from the ethyl ester moiety in the polymer F completely disappeared. The obtained planer salt of the polymer F is referred to as a conjugated polymer compound 9. The conjugated polymer compound 9 is composed of a structural unit represented by the formula (0) ("all structural units include a group selected from the group represented by the formula (1) and a group represented by the formula (2)). The ratio of the structural unit of one or more kinds of bases and one or more kinds of bases represented by formula (3) and the structures shown by formulas (13), (15), (π), and (20) in all structural units are early. The ratio of the yuan is 75 mol%.). 8eV。 The orbital energy of the HOMO of the polymer compound 9 is -5. 8eV.

惰性環境下，混合2-[2-(2-曱氧基乙氧基）乙氧基]-對-甲笨磺酸酯（11. Og)、三乙二醇（30. Og)、氫氧化鉀 (3. 3g)，在100°C加熱攪拌18小時。放置冷卻後，將反應溶液加入水（100毫升）’以氣仿進行分液萃取，濃縮溶液。將濃縮的溶液藉由球管蒸德（Kugelrohr distil 1 at ion) (lOmniTorr、180°C)，得到 2-(2-(2-(2-(2-(2-甲氧基乙氧基）-乙氧基）-乙氧基）_乙氧基）-乙氧基）乙醇（6. lg)。 183 323545 201228842 [參考例ίο] 惰性環境下，混合2-(2-(2-(2-(2-(2-曱氧基乙氧基）_ 乙氧基）-乙氧基）-乙氧基）-乙氧基）乙醇（8· 0g)、氫氧化鈉 (1.4g)、蒸顧水（2毫升）及四氫吱喃（2毫升），冰冷。於混合溶液，花費30分鐘滴入對甲苯磺醯氯（tosyl chloride)(5. 5g)之四氫吱喃（6. 4毫升）溶液’滴入後將反應溶液升溫至室溫，攪拌15小時。於反應溶液，添加蒸镏水（50毫升），以6M硫酸中和反應溶液後，以氣仿進行分液萃取。藉由濃縮溶液，得到2-(2-(2-(2-(2-(2~甲氧基乙氧基）_乙氧基）-乙氧基）-乙氧基）-乙氧基）對甲苯磺酸酯（11. 8g)。 [參考例11] 2, 7-二溴-9, 9-雙[3-乙氧基羰基-4-[2-(2-(2-(2- (2-(2-甲氧基乙氧基）-乙氧基）—乙氧基）_乙氧基）_乙氧基）乙氧基]苯基]-第（化合物C)的合成 2, 7-二溴-9-第（127. 2g)、水楊酸乙酯（375. 2g)及疏乙酸（mercaptoaceticacid)(3.5g)放入 300 毫升的燒瓶，燒瓶内的環境進行氮氣置換。於其中，添加曱烷磺酸（142〇毫升），將混合液在75。(：攪拌整夜。將混合物放置冷卻，添加於冰水，攪拌丨小時。過濾所生成的固體，以加熱的乙腈洗淨。使洗淨後之該固體溶解於丙酮，從所得的丙酮溶液，再結晶固體，進行過濾，得到固體（167 8g：^使所得的固體（5g)、2-(2-(2-(2-(2~(2-甲氧基乙氧基）-乙氧基) -乙氧基）-乙氧基）-乙氧基）對甲苯磺酸酯（1〇.4g)、碳酸鉀 184 323545 201228842 (5. 3g)及18-冠醚-6(0. 6g)溶解於n N-二甲真田* ⑽毫升)，將溶液移入燒瓶，在的混合物冷卻至室溫，加入冰水，攪拌丨小時私2侍 4於反應液添加氯仿（300毫升），進行分液萃取，濃縮溶液。溶解縮物於乙酸乙醋，通過氧化铭管柱’藉由濃縮溶液\得到 2, 7-二溴-9, 9-雙[3-乙氧基幾基-4-[2-(2-(2-(；2~d(2 曱氧基乙氧基）-乙氧基）-乙氧基）-乙氧基）_乙氧基）乙基]苯基]-莽（化合物C)(4. 5g)。 a 一2-(2-(2-methoxyethoxy)ethoxy]-p-methyl sulfonate (1. Og), triethylene glycol (30. Og), hydrogen peroxide Potassium (3.3 g) was stirred and heated at 100 ° C for 18 hours. After standing to cool, the reaction solution was added to water (100 ml), and the mixture was subjected to liquid-liquid extraction, and the solution was concentrated. The concentrated solution was passed through a Kugelrohr distil 1 at (lOmniTorr, 180 ° C) to give 2-(2-(2-(2-(2-methoxyethoxy))) Ethoxy)-ethoxy)-ethoxy)-ethoxy)ethanol (6. lg). 183 323545 201228842 [Reference example ίο] 2-(2-(2-(2-(2-(2-(ethoxy)ethoxy))ethoxy)-ethoxy)-ethoxy Base)-ethoxy)ethanol (8.0 g), sodium hydroxide (1.4 g), distilled water (2 ml) and tetrahydrofuran (2 ml), ice-cooled. To the mixed solution, a solution of tosyl chloride (5.5 g) in tetrahydrofuran (6.4 ml) was added dropwise for 30 minutes. After the dropwise addition, the reaction solution was warmed to room temperature and stirred for 15 hours. . To the reaction solution, distilled water (50 ml) was added, and the reaction solution was neutralized with 6 M sulfuric acid, and then subjected to liquid separation by gas chromatography. By concentrating the solution, 2-(2-(2-(2-(2-(2-methoxy)ethoxy)-ethoxy)-ethoxy)-ethoxy)-ethoxy) P-toluenesulfonate (11.8 g). [Reference Example 11] 2,7-Dibromo-9,9-bis[3-ethoxycarbonyl-4-[2-(2-(2-(2-(2-(2-methoxyethoxy)) Synthesis of 2,7-dibromo-9- (127. ethoxy)-ethoxy)-ethoxy]phenyl]-(Compound C). 2 g), ethyl salicylate (375. 2 g) and mercaptoacetic acid (3.5 g) were placed in a 300 ml flask, and the atmosphere in the flask was replaced with nitrogen. Thereto, decanesulfonic acid (142 ml) was added and the mixture was at 75. (: stirring overnight. The mixture was left to cool, added to ice water, and stirred for a few hours. The resulting solid was filtered and washed with heated acetonitrile. The solid after washing was dissolved in acetone, from the obtained acetone solution, The solid was recrystallized and filtered to give a solid (167 g, EtOAc, EtOAc (EtOAc, EtOAc) - ethoxy)-ethoxy)-ethoxy)p-toluenesulfonate (1. 4g), potassium carbonate 184 323545 201228842 (5. 3g) and 18-crown-6 (0. 6g) Dissolve in n N- dimethyl field * (10 ml), transfer the solution to the flask, cool the mixture to room temperature, add ice water, stir for 2 hours, add 2 chloroform (300 ml) to the reaction solution, and dispense. Extract, concentrate the solution, dissolve the shrinkage in ethyl acetate, and oxidize the column to obtain 2,7-dibromo-9,9-bis[3-ethoxymethyl-4-[2 -(2-(2-(;2~d(2 methoxyethoxy)-ethoxy)-ethoxy)-ethoxy)-ethoxy)ethyl]phenyl]-indole ( Compound C) (4.5 g). a one

H3C(OH2CH2C)6〇〇(CH2CH2〇)6CH3 化合物c [參考例12] 聚合物G的合成惰性環境下，將化合物c(1· 〇g)、溴化4—第3 丁基笨鲁（〇. 9mg)、2 -聯"比咬（〇 3g)、脫水四氫吱喃（5〇毫升）放入200毫升燒瓶，進行混合。將混合物升溫至的它後，添加雙（1，5-環辛二烯）鎳（0.6g)，在55t：攪拌5小時。冷卻混合物至室溫後，將反應溶液滴入甲醇（2〇〇毫升）、Μ稀鹽酸（2〇〇毫升）的混合液。所生成的沈澱物藉由過遽後收集後，再溶解於四氫呋喃。滴入曱醇（2〇〇毫升）、15%氨水 (100毫升）的混合液，所生成的沈殿物藉由過濾後收集。沈澱物再溶解於四氫呋喃，滴入甲醇（2〇〇毫升）、水 323545 185 201228842 毫升）的混合液，所生成的沈澱物藉由過濾收集。收集的沈澱物藉由減壓乾燥’得到聚合物G(360mg)。聚合物G的聚苯乙烯換算的數平均分子量為6. OxlO4。聚合物G係由式（p) 所示的構造單元所成。H3C(OH2CH2C)6〇〇(CH2CH2〇)6CH3 Compound c [Reference Example 12] Synthesis of polymer G Under the inert environment, compound c (1· 〇g), brominated 4-butyl butyl ruthenium (〇) 9 mg), 2-linked " than bite (〇3g), dehydrated tetrahydrofuran (5〇ml) was placed in a 200 ml flask and mixed. After the mixture was warmed to this time, bis(1,5-cyclooctadiene)nickel (0.6 g) was added, and stirred at 55t for 5 hours. After cooling the mixture to room temperature, the reaction solution was added dropwise to a mixture of methanol (2 mL) and dilute hydrochloric acid (2 mL). The resulting precipitate was collected by hydrazine and then dissolved in tetrahydrofuran. A mixture of decyl alcohol (2 ml) and 15% aqueous ammonia (100 ml) was added dropwise, and the resulting sediment was collected by filtration. The precipitate was redissolved in tetrahydrofuran, and a mixture of methanol (2 ml), water 323545 185 201228842 ml) was added, and the resulting precipitate was collected by filtration. The collected precipitate was dried under reduced pressure to give a polymer G (360 mg). The polymer has a polystyrene-equivalent number average molecular weight of 6. OxlO4. The polymer G is formed of a structural unit represented by the formula (p).

聚合物G的鉋鹽的合成將聚合物G(150mg)放入100毫升燒瓶，進行氮氣置換。混合四氫呋喃（15毫升）及甲醇（5毫升）。於混合溶液，添加氫氧化铯（170mg)溶解於水（2毫升）之水溶液，在65°C 攪拌6小時。冷卻混合物至室溫後，減壓蒸餾除去反應溶劑。所生成的固體以水洗淨，以減壓乾燥，得到淡黃色固體（95mg)。藉由NMR光譜，確認聚合物G内的來自乙酯部位的乙基之訊號完全消失。所得的聚合物G的鉋鹽，稱為共耗高分子化合物10。共扼高分子化合物10係由式（Q)所示的構造單元所構成（「全部構造單元中，包含選自式（1) 所示的基以及式（2)所示的基所成群的1種以上的基以及式（3)所示的1種以上的基之構造單元的比例」以及「食部構造單元中式（13)、（15)、（17)及（20)所示的構造箏元& 比例」為100莫耳％。）。共輛高分子化合物1〇的’ 執道能量為-5. 7eV，LUM0的執道能量為-2. 9eV。 186 〆 201228842Synthesis of Planer Salt of Polymer G Polymer G (150 mg) was placed in a 100 ml flask and purged with nitrogen. Tetrahydrofuran (15 ml) and methanol (5 ml) were combined. To the mixed solution, an aqueous solution of cesium hydroxide (170 mg) dissolved in water (2 ml) was added, and the mixture was stirred at 65 ° C for 6 hours. After cooling the mixture to room temperature, the reaction solvent was distilled off under reduced pressure. The resulting solid was washed with water and dried under reduced pressure to give pale yellow solid (95mg). It was confirmed by NMR spectrum that the signal of the ethyl group derived from the ethyl ester moiety in the polymer G completely disappeared. The obtained planer salt of the polymer G is referred to as a co-consumed polymer compound 10. The conjugated polymer compound 10 is composed of a structural unit represented by the formula (Q) ("all structural units include a group selected from the group represented by the formula (1) and a group represented by the formula (2)). The ratio of the structural unit of one or more kinds of bases and one or more types of bases represented by the formula (3) and the structures shown by the formulas (13), (15), (17), and (20) in the food structure unit The zither & ratio is 100 mol%.). 9eV。 The total energy of the polymer compound is -5. 186 〆 201228842

[參考例13] 1，3-二溴-5-乙氧基羰基-6-[2-[2-(2-曱氧基乙氧基）乙氧基]乙氧基]苯的合成惰性環境下，混合3, 5-二溴水揚酸（2〇g)、乙醇毫升）、濃硫酸（1.5毫升）、曱苯（7毫升），在i3(rc加熱擾拌20小時。放置冷卻後，將反應溶液加入冰水（1〇〇毫升），以氯仿進行分液萃取，濃縮溶液。所得的固體溶解於異丙醇’將溶液滴入蒸餾水中。所得的析出物藉由過濾，得到固體（18g)。惰性環境下，混合所得的固體（ig)、2_[2_(2_ 甲氧基乙氧基）乙氧基]-對-曱苯礦酸酯（1.5g)、碳酸卸 (〇. 7g)及DMF(15毫升），在l〇〇°C加熱授拌4小時。放置 % 冷卻後’添加氣仿，進行分液萃取，濃縮溶液。將濃縮物各解於氣仿，藉由通過石夕凝膠管柱精製。藉由濃縮溶液，得到1，3-二溴-5-乙氧基羰基_6-[2-[2-(2-曱氧基乙氧基）己氧基]乙氧基]笨（l.Og)。 [參考例14] 聚合物Η的合成惰性環境下，混合化合物A(0. 2g)、化合物Β (0. 5g)、 1’3-二溴-5_乙氧基羰基_6_[2-[2-(2-曱氡基乙氧基）乙氧基]乙氧基]苯（0. lg)、三苯膦鈀（30mg)、溴化四丁基銨（4mg) 187 323545 Z) 201228842 及曱苯U9毫升）’加熱至l〇5°C。於該反應液，滴入酸鈉水溶液（5毫升），回流5小時。於反應液，< 添加2^碳酸（6mg)，回流14小時。然後，添加二乙基二坊二σ本堋 (sodium N，N，-diethyldithiocarbamate)水溶液（1〇升、濃度：0.05g/mL)，攪拌2小時。除去水層 0毫洗淨有機層，使濃縮所得的固體溶解於氣仿，藉由通尚_ 化鋁管柱、矽凝膠管柱精製。濃縮從管柱之洗出液，乾燥。所得的聚合物Η之產量為〇. 44g。、聚合物Η的聚苯乙烯換算的數平均分子量為3. 6χ1〇、聚合物Η係由式（R)所示的構造單元所成。[Reference Example 13] Synthesis inert atmosphere of 1,3-dibromo-5-ethoxycarbonyl-6-[2-[2-(2-decyloxyethoxy)ethoxy]ethoxy]benzene Next, mix 3, 5-dibromo salicylic acid (2〇g), ethanol (ml), concentrated sulfuric acid (1.5 ml), toluene (7 ml), and stir on i3 (rc heating for 20 hours. After standing and cooling, The reaction solution was added to ice water (1 ml), and the mixture was extracted with chloroform, and the solution was concentrated. The obtained solid was dissolved in isopropyl alcohol. The solution was dropped into distilled water. The resulting precipitate was filtered to give a solid ( 18g), the resulting solid (ig), 2_[2_(2_methoxyethoxy)ethoxy]-p-nonyl phthalate (1.5g), carbonic acid unloading (〇. 7g) under inert atmosphere And DMF (15 ml), heat-mixed at l ° ° C for 4 hours. Placement % After cooling, 'add gas, add liquid extraction, concentrate the solution. Dissolve the concentrate in the air, by passing the stone Refining the gel column. By concentrating the solution, 1,3-dibromo-5-ethoxycarbonyl-6-[2-[2-(2-decyloxyethoxy)hexyloxy]B is obtained. Oxyl] stupid (l.Og) [Reference Example 14] Synthesis of polymer ruthenium Mixing compound A (0.2 g), compound hydrazine (0.5 g), 1'3-dibromo-5-ethoxycarbonyl _6_[2-[2-(2-mercapto ethoxy) under inert atmosphere Ethyl]ethoxy]benzene (0.3 g), triphenylphosphine palladium (30 mg), tetrabutylammonium bromide (4 mg) 187 323545 Z) 201228842 and toluene U9 ml) 'heated to l〇 5 ° C. To the reaction mixture, a sodium aqueous solution (5 ml) was added dropwise and the mixture was refluxed for 5 hr. To the reaction mixture, <2> 2 of carbonic acid (6 mg) was added and refluxed for 14 hours. Then, an aqueous solution of sodium N,N,-diethyldithiocarbamate (1 liter, concentration: 0.05 g/mL) was added, and the mixture was stirred for 2 hours. The water layer was removed and the organic layer was washed, and the concentrated solid was dissolved in a gas mixture, and purified by a galvanic column and a ruthenium gel column. The eluate from the column was concentrated and dried. The yield of the obtained polymer ruthenium was 〇 44 g. The polystyrene-equivalent number average molecular weight of the polymer crucible is 3. 6 χ 1 〇, and the polymer oxime is formed by a structural unit represented by the formula (R).

[實驗例11] 聚合物Η的鉋鹽的合成將聚合物H(200mg)放入100毫升燒瓶，進行氮氣置換。添加四氫呋喃（14毫升）及甲醇（7毫升），使其混合。於混合溶液，添加氫氧化鉋（90mg)溶解於水（1毫升）之水溶液，在65〇C攪拌1小時。於反應溶液，添加甲醇5毫升，再在65°C攪拌4小時。冷卻混合物至室溫後，減壓蒸餾除去反應溶劑。所生成的固體以水洗淨，以減壓乾燥’得到淡黃色固體（190mg)。藉由NMR光譜，確認聚合物Η内的來 323545 188 201228842 自乙酯部位的乙基之訊號完全消失。所得的聚合物Η的铯鹽，稱為共軛高分子化合物11。共軛高分子化合物11係由式（S)所示的構造單元所構成（「全部構造單元中，包含選自式（1)所示的基以及式（2)所示的基所成群的1種以上的基以及式（3)所示的1種以上的基之構造單元的比例」以及「全部構造單元中式（13)、（15)、（17)及（20)所示的構造單元之比例」為100莫耳％。）。共軛高分子化合物11的[Experimental Example 11] Synthesis of a planer salt of a polymer crucible Polymer H (200 mg) was placed in a 100 ml flask and subjected to nitrogen gas replacement. Tetrahydrofuran (14 ml) and methanol (7 ml) were added and mixed. To the mixed solution, an aqueous solution of water (10 mg) dissolved in water (1 ml) was added, and the mixture was stirred at 65 ° C for 1 hour. To the reaction solution, 5 ml of methanol was added, followed by stirring at 65 ° C for 4 hours. After the mixture was cooled to room temperature, the reaction solvent was evaporated under reduced pressure. The resulting solid was washed with water and dried under reduced pressure to give a pale yellow solid (190 mg). From the NMR spectrum, it was confirmed that the signal of the ethyl group from the ethyl ester moiety of 323545 188 201228842 completely disappeared. The obtained ruthenium salt of the polymer ruthenium is referred to as a conjugated polymer compound 11. The conjugated polymer compound 11 is composed of a structural unit represented by the formula (S) ("all structural units include a group selected from the group represented by the formula (1) and a group represented by the formula (2)). The ratio of one or more kinds of bases and one or more types of structural units represented by formula (3) and the structural units represented by formulas (13), (15), (17), and (20) in all structural units The ratio is 100% by mole.). Conjugated polymer compound 11

Α 卜二溴-9, 9-雙[3,4-雙[2-[2-(2-甲氧基^〜^^^ 氧基]乙氧基]-5-甲氧基羰基苯基]苐（化合物D)的合成 2，7 一填~9-第（34. lg)、2，3_二經基安息香酸甲酉旨 (l〇l. 3g)及騎乙酸（mercapt〇acetic acid)(l. 4g)放入 500 毫升的燒瓶’進行氮氣置換。於其中，添加曱烷磺酸（350 毫升），將混合液在90°C攪拌19小時。將混合物放置冷卻，添加於冰水’攪拌1小時。過濾所生成的固體，以加熱的乙睛洗淨。使洗淨後之該固體溶解於丙酮，從所得的丙酮岭液’再結晶固體，進行過濾。使所得的固體（16. 3g)、〜[2〜（2-甲氣基乙氧基）乙氧基]-對曱苯磺酸酯（6〇. 3g)、 189 323545 201228842 碳酸鉀（48. 6g)及18-冠醚-6(2. 4g)溶解於N-二甲基曱醯胺（DMF)(500毫升），將溶液移入燒瓶’在li〇°c擾拌15小時。所得的混合物冷卻至室温，加入冰水，攪拌1小時。於反應液添加乙酸乙酯（3〇〇毫升）’進行分液萃取，濃縮溶液，使其溶解於氯仿/曱醇（50/1(體積比））的混合溶劑，藉由通過石夕凝膠管柱精製。藉由濃縮通過管柱之溶液，得到2,7-二溴-9,9-雙[3,4-雙[2-[2-(2-曱氧基乙氧基）乙氧基]乙氧基]-5-甲氧基羰基苯基]苐（化合物D)(20. 5g)。參[參考例16] 2, 7-雙[7-(4-甲基苯基）-9, 9-二辛基苐-2-基]-9, 9一雙[5-曱氧基羰基-3, 4-雙[2-[2-(2-曱氧基乙氧基）乙氧基] 乙氧基]苯基]-第（聚合物I)的合成惰性環境下，混合化合物D(0.70g)、2-(4,4,5,5-四甲基-1，2, 3-二氧雜硼雜環戊-2-基）-9, 9-二辛基苐 (0. 62g)、三苯膦鈀（〇. 〇i9g)、二噁烷（40毫升）、水（6毫 φ 升）及碳酸鉀水溶液（1.38g)，加熱至8(TC。使反應液反應 1小時。反應後’添加飽和二乙基二硫胺曱酸鈉（s〇dium N，Ν’ -diethyldithiocarbamate)水溶液 5 毫升，授拌 3〇分鐘後，除去有機溶劑。所得的固體藉由通過氧化鋁管柱（展開溶劑己烷：乙酸乙酯=1 : 1(體積比））精製，藉由濃縮溶液，得到2,7-雙[7-(4-甲基苯基）—9,9-二辛基苐-2__ 基]-9, 9-雙[3-乙氧基羰基-4-[2-[2-(2-甲氧基乙氧基）乙氧基]乙氧基]本基]-第（聚合物I)66〇mg。聚合物I的聚苯乙烯換算的數平均分子量為2 〇χ1〇3。 323545 190 201228842 聚合物I係由式（T)所示。2-(4, 4, 5, 5-四曱基-1，2, 3-二氧雜硼雜環戊-2-基）-9, 9-二辛基苐可藉由日本專利特開 2009-74017號公報記載之方法合成。Dibromo-9,9-bis[3,4-bis[2-[2-(2-methoxy^~^^^oxy]ethoxy]-5-methoxycarbonylphenyl] Synthesis of hydrazine (Compound D) 2,7 One-filled~9-(34. lg), 2,3-di-based benzoic acid formazan (l〇l. 3g) and acetic acid (mercapt〇acetic acid) (1.4 g) was placed in a 500 ml flask for nitrogen replacement, in which decanesulfonic acid (350 ml) was added, and the mixture was stirred at 90 ° C for 19 hours. The mixture was allowed to cool and added to ice water. After stirring for 1 hour, the resulting solid was filtered and washed with heated acetonitrile. The solid after washing was dissolved in acetone, and the solid was recrystallized from the obtained acetone celite and filtered to obtain the obtained solid (16. 3g), ~[2~(2-Methoxyethyloxy)ethoxy]-p-toluenesulfonate (6〇. 3g), 189 323545 201228842 Potassium carbonate (48. 6g) and 18-crown ether -6 (2.4 g) was dissolved in N-dimethyl decylamine (DMF) (500 ml), and the solution was transferred to a flask. The mixture was stirred at 15 ° C for 15 hours. The resulting mixture was cooled to room temperature and ice water was added. , stirring for 1 hour. Add ethyl acetate (3 ml) to the reaction solution. The liquid separation extraction was carried out, and the solution was concentrated and dissolved in a mixed solvent of chloroform/nonanol (50/1 (volume ratio)), and purified by passing through a column of a stone gel column. 2,7-dibromo-9,9-bis[3,4-bis[2-[2-(2-decyloxyethoxy)ethoxy]ethoxy]-5-methoxycarbonylbenzene Base] oxime (Compound D) (20.5 g). Reference [Reference Example 16] 2,7-bis[7-(4-methylphenyl)-9,9-dioctylfluoren-2-yl]- 9, 9-double [5-decyloxycarbonyl-3,4-bis[2-[2-(2-decyloxyethoxy)ethoxy]ethoxy]phenyl]- (polymer) In a synthetic inert atmosphere of I), compound D (0.70 g), 2-(4,4,5,5-tetramethyl-1,2,3-dioxaborolan-2-yl)- 9, 9-dioctylhydrazine (0.62 g), triphenylphosphine palladium (〇. 〇i9g), dioxane (40 ml), water (6 m φ liter) and aqueous potassium carbonate solution (1.38 g), heated To 8 (TC. The reaction solution was allowed to react for 1 hour. After the reaction, add 5 ml of a saturated aqueous solution of sodium dithionate (s〇dium N, Ν'-diethyldithiocarbamate), and mix for 3 minutes, then remove the organic Solvent. The resulting solid is passed through oxygen The aluminum column (developed solvent hexane: ethyl acetate = 1 : 1 (volume ratio)) was refined, and the solution was concentrated to obtain 2,7-bis[7-(4-methylphenyl)-9,9 -dioctylindole-2__yl]-9,9-bis[3-ethoxycarbonyl-4-[2-[2-(2-methoxyethoxy)ethoxy]ethoxy] Base]- (Polymer I) 66 〇 mg. The polystyrene-equivalent number average molecular weight of the polymer I was 2 〇χ1〇3. 323545 190 201228842 Polymer I is represented by formula (T). 2-(4, 4, 5, 5-tetradecyl-1,2,3-dioxaborolan-2-yl)-9,9-dioctylfluorene can be obtained by Japanese Patent Laid-Open 2009 The method described in the publication No. -74017 is synthesized.

_ [實驗例12] 聚合物I的铯鹽的合成將聚合物1(236ing)放入100毫升燒瓶，將燒瓶内的環境以氮氣置換。於其中，添加四氫σ夫喃（20毫升）及曱醇（1〇毫升）混合，使混合物升溫至65°C。於其中，添加氫氧化鉋（240mg)溶解於水（2毫升）之水溶液，在65。(：擾拌7小時。冷卻所得的混合物至室溫後，減壓蒸餾除去反應溶劑。 • 所生成的固體以水洗淨，以減壓乾燥，得到淡黃色固體 (190mg)。藉由NMR光譜，確認來自乙酯部位的乙基之訊號完全消失。所得的聚合物I的鉋鹽，稱為共軛高分子化合物12。共軛高分子化合物12係由式（u)所示（「全部構造單元中’包含選自式（1)所示的基以及式（2)所示的基所成群的1種以上的基以及式（3)所示的1種以上的基之構造單元的比例」以及「全部構造單元中式（13)、（15)、（17)及 (20)所示的構造單元之比例j，在小數第2位四捨五入為 33. 3莫耳％。）。共軛高分子化合物12的HOMO的軌道能量 191 323545 201228842 為-5. 6eV，LUM0的執道能量為-2. 8eV。[Experimental Example 12] Synthesis of sulfonium salt of polymer I Polymer 1 (236ing) was placed in a 100 ml flask, and the atmosphere in the flask was replaced with nitrogen. Thereto, tetrahydro-zepulran (20 ml) and decyl alcohol (1 ml) were added, and the mixture was heated to 65 °C. Thereto, an aqueous solution of a hydroxide (240 mg) dissolved in water (2 ml) was added at 65. (: The mixture was stirred for 7 hours. After the mixture was cooled to room temperature, the reaction solvent was evaporated under reduced pressure. The solid obtained was washed with water and dried under reduced pressure to give a pale yellow solid (190 mg). It was confirmed that the signal of the ethyl group from the ethyl ester site completely disappeared. The obtained salt of the polymer I was referred to as the conjugated polymer compound 12. The conjugated polymer compound 12 was represented by the formula (u) ("all structures The ratio of the structural unit including one or more groups selected from the group represented by the formula (1) and the group represented by the formula (2) and one or more groups represented by the formula (3) in the unit And the ratio j of the structural units shown in the equations (13), (15), (17), and (20) in all the structural units is rounded off to the third decimal place to be 33. 3 mol%.). Conjugation height The ego energy of the HOMO of the molecular compound 12 is 191 323545 201228842 is -5. 6eV, and the LUM0 is -2. 8eV.

(U) [實驗例13] 〈有機EL元件的製作〉成膜圖形化於玻璃基板表面的ΙΤ0陽極（膜厚. 上’塗佈電洞注入材料溶液，藉由旋轉塗佈法， 45nm) 以獏厚成為60nm的方式使電洞注入層成膜。於電洞注入層成膜的玻璃基板，在惰性環境下（氮氣環境下）、2〇(rc加熱1〇分鐘，使電洞注入層不溶化，使基板在室溫自然冷卻，得到形成有電洞注入層的基板。此處’於電洞注入材料，使用Starck VTECH公司製 ?£001':?33溶液（聚（3,4-伸乙基二氧基噻吩）.聚苯乙烯續酸’製品名「Baytron」）。然後’屍合電洞傳輸性高分子材料與二甲苯，得到包含0.7重量％的電洞傳輸性高分子材料之電洞傳輸層形成用組成物。此處，電洞傳輸性高分子材料，可用以下的方法合成。於具備回流冷卻器及頂置式攪拌器之丨升3 口圓底燒瓶，添加2, 7-雙（1，3, 2-二氧雜硼雜環戊基）_9, 9_二（1_辛基）第（3. 863g、7. 283 毫莫耳）、N，n-二（對-溴苯基 192 323545 201228842 (丁-2-基）苯基）胺（3. 177g、6. 919毫莫耳）及（4〜漠苯基）苯并環丁烷胺（156. 3mg、〇. 364毫莫耳）。然後，添加氯化三辛基曱基銨（奥得里其（Aldrich)公司製、商品名：(U) [Experimental Example 13] <Production of Organic EL Element> The film was patterned on the surface of the glass substrate, ΙΤ0 anode (film thickness. Upper 'coating hole injection material solution, by spin coating method, 45 nm) The hole is formed into a film by a thickness of 60 nm. The glass substrate formed on the hole injection layer is heated in an inert atmosphere (under a nitrogen atmosphere) at 2 Torr (rc for 1 minute to insolubilize the hole injection layer, and the substrate is naturally cooled at room temperature to form a hole. The substrate of the injection layer. Here, the material injected into the hole is made of Starch VTECH's ?001':?33 solution (poly(3,4-extended ethylenedioxythiophene).polystyrene acid-reducing' product) "Baytron". Then, the body-transporting polymer material and xylene were used to obtain a hole transport layer forming composition containing 0.7% by weight of a hole transporting polymer material. Here, hole transport The polymer material can be synthesized by the following method. Add a 2, 7-bis(1,3,2-dioxaborolane) to a 3-liter round bottom flask equipped with a reflux condenser and an overhead stirrer. Base)_9, 9_bis(1_octyl) (3. 863g, 7.283 millimolar), N,n-di(p-bromophenyl 192 323545 201228842 (but-2-yl)phenyl Amine (3. 177g, 6. 919 millimoles) and (4~ desert phenyl) benzocyclobutaneamine (156. 3mg, 〇. 364 millimolar). Yue added trioctyl ammonium group (in which Oder (Aldrich) Corporation, trade name:

Aliquat(登記商標）336)(2.29g)然後曱苯50毫升。添加 PdCMPPha)2 (4. 9mg)後，將混合物在i〇5°C的油浴中攪拌 15分鐘。添加碳酸鈉水溶液（2. 〇M、14毫升），所得的混合物在l〇5°C的油浴中攪拌16 5小時，然後，添加苯硼酸 (〇.5g) ’所得的混合物攪拌7小時。除去水層，將有機層以水50毫升洗淨。將有機層放回反應燒瓶，添加二乙基二硫胺曱酸鈉〇.75g及水5〇毫升。所得的混合物在851的油浴中攪拌16小時。除去水層，將有機層以水1〇〇毫升洗淨3次’然後’通過矽凝膠及鹼性氧化鋁管柱。使用曱苯作為溶離劑（elute)，回收包含洗出的聚合物之甲笨溶液。然後，將回收的前述曱苯溶液注入曱醇，使聚合物沈澱。將沈殿的聚合物再度溶解於η將麟的甲苯溶液注入曱醇’使聚合物再沈澱。將沈澱的聚合物在進行真空乾燥’得到電洞傳輸性高分子材料4. 2g。根據凝膠渗透詹析法所知的電洞傳輸性高分子材料的聚苯乙烯換算的重平=子置為1 · 25x10，分子量分佈指數（Mw/Mn)為2. 8。於上述彳于到的形成有電洞注入層的基板之電洞注入層上’藉由旋轉塗佈法，塗佈電洞傳輸層形成用組成物，得到膜厚2〇nm的塗膜。將設有該塗膜之基板，在惰性環境下 (氣氣環境下）、190°C加熱20分鐘，使塗膜不溶化後，在室溫自然冷卻’得卿财電洞傳輸層的基板。 193 323545 201228842 然後，混合發光高分子材料（Sumation公司製「Lumation BP361」）以及二曱苯，得到包含1 4重量％的發光高分子材料之發光層形成用組成物。於上述得到的形成有電洞傳輸層的基板之電洞傳輸層上，藉由旋轉塗佈法，塗佈發光層形成用組成物，得到膜厚8〇nm的塗膜。將Aliquat (registered trademark) 336) (2.29 g) and then benzene 50 ml. After the addition of PdCMPPha) 2 (4.9 mg), the mixture was stirred in an oil bath at 5 ° C for 15 minutes. An aqueous solution of sodium carbonate (2. 〇M, 14 ml) was added, and the mixture was stirred for 16 hrs in an oil bath of <RTIgt;</RTI> The aqueous layer was removed, and the organic layer was washed with 50 ml of water. The organic layer was returned to the reaction flask, and sodium diethyldithioacetate, sodium ruthenium, 75 g, and water, 5 ml, were added. The resulting mixture was stirred in an oil bath of 851 for 16 hours. The aqueous layer was removed, and the organic layer was washed three times with water (1) and then passed through a hydrazine gel and a basic alumina column. A benzene solution containing the eluted polymer was recovered using benzene as an eluent. Then, the recovered toluene solution was poured into decyl alcohol to precipitate a polymer. The polymer of the shoal was re-dissolved in η to inject the toluene solution of lin to the sterol' to reprecipitate the polymer. 2克。 The polymer was transferred to the polymer to obtain a hole transporting polymer material 4. 2g. 0。 The polystyrene-equivalent weight of the hole-transporting polymer material is 1. 25 × 10, the molecular weight distribution index (Mw / Mn) is 2.8. On the hole injection layer of the substrate on which the hole injection layer was formed, the composition for forming a hole transport layer was applied by a spin coating method to obtain a coating film having a film thickness of 2 〇 nm. The substrate provided with the coating film was heated in an inert atmosphere (in an air atmosphere) at 190 ° C for 20 minutes to insolubilize the coating film, and then naturally cooled at a room temperature to the substrate of the transmission layer. 193 323545 201228842 Then, a light-emitting polymer material ("Lumation BP361" manufactured by Sumation Co., Ltd.) and diphenylbenzene were mixed to obtain a composition for forming a light-emitting layer containing 14% by weight of a light-emitting polymer material. On the hole transport layer of the substrate on which the hole transport layer was formed, the composition for forming a light-emitting layer was applied by a spin coating method to obtain a coating film having a film thickness of 8 Å. will

設有該塗膜之基板，在惰性環境下（氮氣環境下）、13(rCM 熱15分鐘’使溶劑蒸發後，在室溫自然冷卻，得到形成有發光層的基板。鲁 ❿合甲醇與共輛高分子化合物丨，得到包含Q 2重量％共輛高分子化合物1之組成物。於上述得到的發光層的基板的發光層上，藉由旋轉塗佈法塗佈前述組成物，得到膜 ^ 10nm，塗膜叹有該塗膜之基板，在常壓的惰性氣體環 i兄下（氮氣環i兄下）’在l3『c加熱1〇分鐘，使溶劑蒸發後，自然冷卻至室溫，得_成有包含_高分子化合物1的電子注入層之基板。 •訂述所得的形成有包含共軛高分子化合物1的層之基板’插入真空裝置内，藉由真空蒸錄法，在該層上，使 A1成膜8Gnm’形錢極，製造制構造體卜上述所得的積層構造體1從真空裝置取出，在惰性氣衣境下（氮氣w兄下），以密封玻璃與2液混合型環氧樹脂密封，得到有機EL元件J。 [實驗例14] 於實驗例13 ’除使用共輛高分子化合物2取代共輪高刀子化合物1以外’輿實驗例13同樣地操作，得到有機 194 323545 201228842 EL元件2。 [實驗例15] 於實驗例13，除混合甲醇、水及共軛高分子化合物3 (曱醇/水的體積比=20/1)，使用包含0.2重量％共軛高分子化合物3之組成物，取代混合曱醇與共軛高分子化合物1，得到包含0. 2重量％共軛高分子化合物1之組成物外，與實驗例13同樣地操作，得到有機EL元件3。 [實驗例16] ® 於實驗例13，除使用共軛高分子化合物4取代共軛高分子化合物1以外，與實驗例13同樣地操作，得到有機 EL元件4。 [實驗例17] 於實驗例13，除使用共軛高分子化合物5取代共軛高分子化合物1以外，與實驗例13同樣地操作，得到有機 EL元件5。 φ [實驗例18] 於實驗例13，除使用共軛高分子化合物6取代共軛高分子化合物1以外，與實驗例13同樣地操作，得到有機 EL元件6。 [實驗例19] 於實驗例13，除使用共軛高分子化合物7取代共軛高分子化合物1以外，與實驗例13同樣地操作，得到有機 EL元件7。 [實驗例20] 195 323545 201228842 於實驗例13，除使用共軛高分子化合物8取代共軛高分子化合物1以外，與實驗例13同樣地操作，得到有機 EL元件8。 [實驗例21] 於實驗例13，除使用共軛高分子化合物9取代共軛高分子化合物1以外，與實驗例13同樣地操作，得到有機 EL元件9。 [實驗例22] ® 於實驗例13，除使用共軛高分子化合物10取代共軛高分子化合物1以外，與實驗例13同樣地操作，得到有機 EL元件10。 [實驗例23] 於實驗例13,除使用共軛高分子化合物11取代共軛高分子化合物1以外，與實驗例13同樣地操作，得到有機 EL元件11。 φ [實驗例24] 於實驗例13,除使用共軛高分子化合物12取代共輛高分子化合物1以外，與實驗例13同樣地操作，得到有機 EL元件12。 [實驗例25] 於實驗例13，除使用混合曱醇、共軛高分子化合物1 及A1摻雜的ZnO奈米粒子（奥得里其（Aldrich)製）之組成物，取代混合曱醇與共軛高分子化合物1，得到包含0.2 重量％共軛高分子化合物1之組成物外，與實驗例13同樣 196 323545 201228842 地操作，得到有機EL元件13。 [實驗例26] 於實驗例13，除混合共軛高分子化合物1以及低分子化合物（奥得里其（Aldrich)製、3, 5-雙（4-第3 丁基苯基） _4-苯基-4H-1，2，4-三。坐）》得到包含0. 2重量％共扼高分子化合物1以及0. 2重量％低分子化合物之組成物，取代混合甲醇與共軛高分子化合物1，得到包含0.2重量％共軛高分子化合物1之組成物外，與實驗例13同樣地操作，得到有籲機EL元件14。 [實驗例27] 於實驗例13，除使用Ag取代A1外，與實驗例13同樣地操作，得到有機EL元件15。 [實驗例28] 於實驗例13，除使用Au取代A1外，與實驗例13同樣地操作，得到有機EL元件16。 φ [測定] 於上述所得的有機EL元件1至16，施加10V的順向電壓，測定發光亮度及發光效率。結果表示於表1。 197 323545 201228842 [表i] 高分子化合物陰極發光亮度 (cd/m2) 發光效率 (cd/A) 實驗例13 (有機EL元件1) 共軛高分子化合物1 A1 31652 7. 9 實驗例14 (有機EL元件2) 共軛高分子化合物2 A1 22664 7. 2 實驗例15 (有機EL元件3) 共軛高分子化合物3 A1 16673 6. 3 實驗例16 (有機EL元件4) 共軛高分子化合物4 A1 20748 7. 7 實驗例17 (有機EL元件5) 共軛高分子化合物5 A1 33254 9. 1 實驗例18 (有機EL元件6) 共輕高分子化合物6 A1 25496 8. 0 實驗例19 (有機EL元件7) 共軛高分子化合物7 A1 33984 8. 8 實驗例20 (有機EL元件8) 共軛高分子化合物8 A1 28114 7. 9 實驗例21 (有機EL元件9) 共軛高分子化合物9 A1 10212 5. 3 實驗例22 (有機EL元件10) 共輛高分子化合物10 A1 12308 6. 5 實驗例23 (有機EL元件11) 共軛高分子化合物11 A1 14927 6. 5 實驗例24 (有機EL元件12) 共軛高分子化合物12 A1 17735 6. 1 實驗例25 (有機EL元件13) 共軛高分子化合物1 +ZnO A1 A1 10773 6. 9 實驗例26 (有機EL元件14) 共軛高分子化合物1 +低分子化合物1 A1 19610 6. 8 實驗例27 (有機EL元件15) 共軛高分子化合物1 Ag 18300 7. 1 實驗例28 (有機EL元件16) 共軛高分子化合物1 Au 3579.5 3. 1 198 323545 i) 201228842 [實驗例29] 混合曱醇與共麵高分子化合物1，得到包含0.2重量％共軛南分子化合物丨之組成物。於玻璃基板表面成膜圖形化的no陰極（膜厚：45nm)i，在大氣中，藉由旋轉塗佈法塗佈刖述組成物，得到膜厚l〇nm的塗膜。設有該塗膜之基板’在惰性氣體環境下（氮氣環境下），在13(TC加熱10 分鐘，使溶劑蒸發後，自然冷卻至室溫，得到形成有包含共軛高分子化合物1的電子注入層之基板。然後’混合發光尚分子材料（Sumat i〇n公司製「Lumation BP361」）以及二甲苯，得到包含ι·4重量％發光高分子材料之發光層形成用組成物。於上述所得的形成有包含共輛高分子化合物1的層之基板的包含共輛高分子化合物1的層上’在大氣中’藉由旋轉塗佈法塗佈發光層形成用組成物，得到膜厚80nm的塗膜。設有該塗膜之基板’在惰性氣體環境下（氮氣環境下），在130°C加熱15分鐘，使溶劑蒸發後，自然冷卻至室溫，得到形成有發光層之基板。然後，於上述所得的形成有發光層之基板的發光層上，在大氣中，藉由旋轉塗佈法塗佈電洞注入材料溶液，得到膜厚60nm的塗膜。設有該塗膜之基板，在惰性氣體環境下（氮氣環境下），在130°C加熱15分鐘，使溶劑蒸發後，自然冷卻至室溫，得到形成有電洞注入層之基板。此處，電洞注入材料溶液，係使用Starck V TECH公司製PED0T : PSS溶液（聚（3, 4-伸乙基二氧基噻吩）·聚苯乙烯磺酸、製 199 323545 201228842 品名：「Baytron」）。將上述所得的形成有電洞注入層之基板，插入真空裝置内，藉由真空蒸鍍法，在該層上，使Au成膜80nm，形成陽極，製造積層構造體2。上述所得的積層構造體2從真空裝置取出，在惰性氣體環境下（氮氣環境下），以密封玻璃與2液混合型環氧樹脂密封，得到有機EL元件17。於上述所得的有機EL元件17，施加10V的順向電壓， • 測定發光亮度及發光效率。結果表示於表2。 [表2] 發光亮度 (cd/m2) 發光效率 (cd/A) 有機EL元件17 3580 3. 1 [實驗例30] 〈兩面發光型有機EL元件的製作〉於實驗例29，Au的膜厚為20nm以外，與實驗例29同樣地操作，得到兩面發光型有機EL元件18。於上述所得的兩面發光型有機EL元件18，施加15V 的順向電壓，測定發光亮度及發光效率。結果表示於表3。 [表3] 發光亮度 (cd/m2) 發光效率 (cd/A) 有機EL元件18 上面側：1091 下面側：5341 上面侧：0. 3 下面側：1. 1 200 323545 201228842 如表2及3所示，確認在大氣中以塗佈製程使離子性聚合物成膜，形成電子注入層的相反積層的有機EL元件發光。【圖示簡單說明】第1圖為表示關於一實施態樣的有機EL裝置之剖面圖。第2圖為表示關於一實施態樣的有機EL裝置之剖面圖。第3圖為表示為用於製造有機EL裝置的裝置之一實施態樣的概念示意圖。第4圖為表示為用於製造第1薄膜的裝置之一實施態樣的典型示意圖。第5圖為表示參考例A1所得的第1薄膜之矽分佈曲線、氧分佈曲線及碳分佈曲線之圖。第6圖為表示參考例A1所得的第1薄膜之矽分佈曲線、氧分佈曲線、碳分佈曲線及氧碳分佈曲線之圖。第7圖為表示參考例A2所得的第1薄膜之矽分佈曲線、氧分佈曲線、碳分佈曲線及氧碳分佈曲線之圖。第8圖為表示參考例A2所得的第1薄膜之矽分佈曲線、氧分佈曲線、碳分佈曲線及氧碳分佈曲線之圖。第9圖為表示參考例A3所得的第1薄膜之矽分佈曲線、氧分佈曲線及碳分佈曲線之圖。第10圖為表示參考例A3所得的第1薄膜之矽分佈曲線、氧分佈曲線、碳分佈曲線及氧碳分佈曲線之圖。 201 323545 201228842 第11圖為表示參考比較例A1所得的第1薄膜之矽分佈曲線、氧分佈曲線及碳分佈曲線之圖。第12圖為表示參考比較例A1所得的第1薄膜之矽分佈曲線、氧分佈曲線、碳分佈曲線及氧碳分佈曲線之圖。第13圖為表示關於一實施態樣的有機EL裝置之剖面The substrate provided with the coating film is cooled in an inert environment (under a nitrogen atmosphere), 13 (rCM heat for 15 minutes), and then naturally cooled at room temperature to obtain a substrate on which a light-emitting layer is formed. The polymer compound 丨 was obtained, and a composition containing a total of 2% by weight of the polymer compound 1 was obtained. The composition was applied onto the light-emitting layer of the substrate of the light-emitting layer obtained above by a spin coating method to obtain a film. 10nm, the film sighs the substrate of the coating film, under the atmospheric pressure of the inert gas ring brother (under the nitrogen ring i brother) 'heated at l3 "c for 1 minute, the solvent is evaporated, and naturally cooled to room temperature, The substrate having the electron injecting layer of the polymer compound 1 is formed. The substrate of the layer in which the layer containing the conjugated polymer compound 1 is formed is inserted into a vacuum device by vacuum evaporation. On the layer, A1 is formed into a film of 8Gnm' shape, and the structure is manufactured. The laminated structure 1 obtained as described above is taken out from the vacuum apparatus, and is mixed with the two liquids under an inert atmosphere (under nitrogen gas). Epoxy resin seal, get organic EL element J. [Experimental Example 14] An organic 194 323545 201228842 EL element 2 was obtained in the same manner as in Experimental Example 13 except that the common polymer compound 2 was used instead of the common high-knife compound 1 to obtain the organic 194 323545 201228842 EL device 2. Example 15] In Experimental Example 13, except that methanol, water, and conjugated polymer compound 3 (volume ratio of sterol/water = 20/1) were mixed, and a composition containing 0.2% by weight of conjugated polymer compound 3 was used instead. The organic EL device 3 was obtained in the same manner as in Experimental Example 13 except that the conjugated polymer compound 1 was mixed with the conjugated polymer compound 1 to obtain a composition containing 0.2% by weight of the conjugated polymer compound 1. [Experimental Example 16] ® In the same manner as in Experimental Example 13, except that the conjugated polymer compound 4 was used instead of the conjugated polymer compound 1, the organic EL device 4 was obtained. [Experimental Example 17] In Experimental Example 13, except that the conjugate height was used. The organic EL device 5 was obtained in the same manner as in Experimental Example 13 except that the molecular compound 5 was substituted for the conjugated polymer compound 1. φ [Experiment 18] In the experimental example 13, the conjugated polymer compound 6 was used instead of the conjugated polymer. In addition to compound 1, In the same manner as in Experimental Example 13, except that the conjugated polymer compound 7 was used instead of the conjugated polymer compound 1, the organic EL device 6 was obtained. Element 7: [Experimental Example 20] 195 323545 201228842 In the same manner as in Experimental Example 13, except that the conjugated polymer compound 8 was used instead of the conjugated polymer compound 1, the organic EL device 8 was obtained. In the same manner as in Experimental Example 13, except that the conjugated polymer compound 9 was used instead of the conjugated polymer compound 1, the organic EL device 9 was obtained. [Experimental Example 22] In the same manner as in Experimental Example 13, except that the conjugated polymer compound 10 was used instead of the conjugated polymer compound 1, the organic EL device 10 was obtained. [Experimental Example 23] An organic EL device 11 was obtained in the same manner as in Experimental Example 13 except that the conjugated polymer compound 11 was used instead of the conjugated polymer compound 1. φ [Experimental Example 24] An organic EL device 12 was obtained in the same manner as in Experimental Example 13 except that the conjugated polymer compound 12 was used instead of the polymer compound 1. [Experimental Example 25] In Experimental Example 13, a mixture of sterol, conjugated polymer compound 1 and A1 doped ZnO nanoparticle (made by Aldrich) was used instead of the mixed sterol. The conjugated polymer compound 1 was obtained in the same manner as in Experimental Example 13 except that the composition of the conjugated polymer compound 1 was obtained in an amount of 0.2% by weight, and the organic EL device 13 was obtained. [Experimental Example 26] In Experimental Example 13, except that the conjugated polymer compound 1 and the low molecular compound (made by Aldrich, 3, 5-bis(4-tert-butylphenyl)-4-benzene were mixed.基-4H-1,2,4-three. Sit)" obtained a composition comprising 0.2% by weight of a conjugated polymer compound 1 and 0.2% by weight of a low molecular compound, substituted mixed methanol and a conjugated polymer compound (1) An organic EL element 14 was obtained in the same manner as in Experimental Example 13 except that a composition containing 0.2% by weight of the conjugated polymer compound 1 was obtained. [Experimental Example 27] An organic EL device 15 was obtained in the same manner as in Experimental Example 13 except that Ag was used instead of A1. [Experimental Example 28] An organic EL device 16 was obtained in the same manner as in Experimental Example 13 except that Au was used instead of A1. φ [Measurement] The organic EL elements 1 to 16 obtained above were applied with a forward voltage of 10 V, and the luminance and the luminous efficiency were measured. The results are shown in Table 1. 197 323545 201228842 [Table i] Cathodoluminescence Brightness (cd/m2) of Polymer Compound Luminescence Efficiency (cd/A) Experimental Example 13 (Organic EL Element 1) Conjugated Polymer Compound 1 A1 31652 7. 9 Experimental Example 14 (Organic EL element 2) Conjugated polymer compound 2 A1 22664 7. 2 Experimental Example 15 (Organic EL device 3) Conjugated polymer compound 3 A1 16673 6. 3 Experimental Example 16 (Organic EL device 4) Conjugated polymer compound 4 A1 20748 7. 7 Experimental Example 17 (Organic EL device 5) Conjugated polymer compound 5 A1 33254 9. 1 Experimental Example 18 (Organic EL device 6) Co-light polymer compound 6 A1 25496 8. 0 Experimental Example 19 (Organic EL element 7) Conjugated polymer compound 7 A1 33984 8. 8 Experimental Example 20 (Organic EL device 8) Conjugated polymer compound 8 A1 28114 7. 9 Experimental Example 21 (Organic EL device 9) Conjugated polymer compound 9 A1 10212 5. 3 Experimental Example 22 (Organic EL device 10) A total of polymer compound 10 A1 12308 6. 5 Experimental Example 23 (Organic EL device 11) Conjugated polymer compound 11 A1 14927 6. 5 Experimental Example 24 (Organic EL element 12) Conjugated polymer compound 12 A1 17735 6. 1 Experimental Example 25 (Organic EL element 13) Conjugated polymer Compound 1 + ZnO A1 A1 10773 6. 9 Experimental Example 26 (Organic EL device 14) Conjugated polymer compound 1 + low molecular compound 1 A1 19610 6. 8 Experimental Example 27 (Organic EL device 15) Conjugated polymer compound 1 Ag 18300 7. 1 Experimental Example 28 (Organic EL device 16) Conjugated polymer compound 1 Au 3579.5 3. 1 198 323545 i) 201228842 [Experimental Example 29] Mixing decyl alcohol and coplanar polymer compound 1 to obtain 0.2 weight % Conjugated South Molecular Compound 丨 Composition. A patterned no cathode (film thickness: 45 nm) i was formed on the surface of the glass substrate, and the composition was coated by a spin coating method in the air to obtain a coating film having a film thickness of 10 nm. The substrate provided with the coating film was heated in an inert gas atmosphere (under a nitrogen atmosphere) at 13 (TC for 10 minutes, and then evaporated to room temperature to obtain an electron containing the conjugated polymer compound 1). The substrate of the layer was injected. Then, a light-emitting molecular material ("Lumation BP361" manufactured by Sumat i〇n Co., Ltd.) and xylene were mixed to obtain a composition for forming a light-emitting layer containing 1-4% by weight of a light-emitting polymer material. On the layer containing the polymer compound 1 containing the layer of the polymer compound 1 in common, the composition for forming a light-emitting layer was applied by a spin coating method on a layer containing a total of the polymer compound 1 to obtain a film thickness of 80 nm. The coating film was provided. The substrate provided with the coating film was heated in an inert gas atmosphere (under a nitrogen atmosphere) at 130 ° C for 15 minutes to evaporate the solvent, and then naturally cooled to room temperature to obtain a substrate on which the light-emitting layer was formed. On the light-emitting layer of the substrate on which the light-emitting layer was formed as described above, a hole injection material solution was applied by a spin coating method in the air to obtain a coating film having a film thickness of 60 nm. The substrate is heated in an inert gas atmosphere (under a nitrogen atmosphere) at 130 ° C for 15 minutes to evaporate the solvent, and then naturally cooled to room temperature to obtain a substrate on which a hole injection layer is formed. Here, the hole injection material For the solution, a PED0T: PSS solution (poly(3,4-extended ethyldioxythiophene)·polystyrenesulfonic acid, manufactured by Starck V TECH Co., Ltd., 199 323545 201228842, product name: "Baytron") was used. The substrate on which the hole injection layer was formed was inserted into a vacuum apparatus, and Au was formed into a film by 80 nm on the layer to form an anode, thereby producing a laminated structure 2. The laminated structure 2 obtained above was vacuumed. The apparatus was taken out and sealed with a two-liquid mixed epoxy resin in an inert gas atmosphere (under a nitrogen atmosphere) to obtain an organic EL element 17. The organic EL element 17 obtained above was applied with a forward voltage of 10 V, The luminescence brightness and the luminescence efficiency were measured. The results are shown in Table 2. [Table 2] Luminance (cd/m2) Luminous efficiency (cd/A) Organic EL element 17 3580 3. 1 [Experimental Example 30] <Two-sided luminescent organic EL Component production In the same manner as in Experimental Example 29, the double-sided light-emitting organic EL device 18 was obtained in the same manner as in Experimental Example 29, and a forward voltage of 15 V was applied to the double-sided light-emitting organic EL device 18 obtained as described above. Light-emitting luminance and luminous efficiency. The results are shown in Table 3. [Table 3] Luminous luminance (cd/m2) Luminous efficiency (cd/A) Organic EL element 18 Upper side: 1091 Lower side: 5341 Upper side: 0.33 Lower side 1200 323545 201228842 As shown in Tables 2 and 3, it was confirmed that the ionic polymer was formed into a film by a coating process in the atmosphere, and the organic EL element forming the opposite layer of the electron injecting layer was caused to emit light. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an organic EL device according to an embodiment. Fig. 2 is a cross-sectional view showing an organic EL device according to an embodiment. Fig. 3 is a conceptual diagram showing an embodiment of an apparatus for manufacturing an organic EL device. Fig. 4 is a typical schematic view showing an embodiment of an apparatus for manufacturing a first film. Fig. 5 is a view showing a meandering distribution curve, an oxygen distribution curve, and a carbon distribution curve of the first film obtained in Reference Example A1. Fig. 6 is a view showing a meandering distribution curve, an oxygen distribution curve, a carbon distribution curve, and an oxygen-carbon distribution curve of the first film obtained in Reference Example A1. Fig. 7 is a graph showing the enthalpy distribution curve, the oxygen distribution curve, the carbon distribution curve, and the oxygen-carbon distribution curve of the first film obtained in Reference Example A2. Fig. 8 is a graph showing the enthalpy distribution curve, the oxygen distribution curve, the carbon distribution curve, and the oxygen-carbon distribution curve of the first film obtained in Reference Example A2. Fig. 9 is a view showing a meandering distribution curve, an oxygen distribution curve, and a carbon distribution curve of the first film obtained in Reference Example A3. Fig. 10 is a view showing the enthalpy distribution curve, the oxygen distribution curve, the carbon distribution curve, and the oxygen-carbon distribution curve of the first film obtained in Reference Example A3. 201 323545 201228842 Fig. 11 is a view showing a 矽 distribution curve, an oxygen distribution curve, and a carbon distribution curve of the first film obtained by referring to Comparative Example A1. Fig. 12 is a view showing a ruthenium distribution curve, an oxygen distribution curve, a carbon distribution curve, and an oxygen-carbon distribution curve of the first film obtained by referring to Comparative Example A1. Figure 13 is a cross-sectional view showing an organic EL device according to an embodiment.

圖。【主要元件符號說明】 I 第2薄膜 3 保護層 5 氣體阻隔層 7 第2薄膜的基材 II 第1薄膜 21、22、23、24傳送滾輪 41 氣體供應管 61、62 磁場產生裝置 511、512第1貼合滚輪 52卜522第2貼合滾輪 820 附加的薄膜 611、621接著層硬化裝置 2 有機EL元件 4 接著層 6 第1薄膜的基材 8 第2氣體阻隔層 13 有機EL裝置 31、32 成膜滾輪 51 電漿產生用電源 500、510、520捲出滾輪 513、523傳送滚輪 530 捲取滾輪 610、620接著層塗佈裝置 701 送出滾輪 702 捲取滾輪 202 323545Figure. [Description of main components] I 2nd film 3 Protective layer 5 Gas barrier layer 7 Substrate of second film II First film 21, 22, 23, 24 transfer roller 41 Gas supply pipes 61, 62 Magnetic field generating devices 511, 512 First bonding roller 52 522 second bonding roller 820 additional film 611, 621 bonding layer curing device 2 organic EL element 4 subsequent layer 6 substrate of first film 8 second gas barrier layer 13 organic EL device 31, 32 Film-forming roller 51 Plasma generating power supply 500, 510, 520 Roll-out roller 513, 523 Transfer roller 530 Winding roller 610, 620 Next layer coating device 701 Feed roller 702 Winding roller 202 323545

Claims

201228842 VII. Patent application scope: 1. An organic electroluminescence (EL) device comprising: a first film; and an organic EL element provided on the first film; wherein the organic EL element has a pair of electrodes and a configuration a light-emitting layer between the electrodes; and an electron injection layer disposed between the electrodes; the electron injection layer includes an ionic polymer; and the first film has a gas/magic barrier layer containing germanium atoms, oxygen atoms, and carbon atoms; And a ratio of the ratio of the number of argon atoms, the ratio of the number of oxygen atoms, and the ratio of the number of carbon atoms to the total amount of the ruthenium atom, the oxygen atom, and the carbon atom, and the gas barrier layer from the thickness direction of the gas barrier layer The 矽 distribution curve, the oxygen distribution curve, and the carbon distribution curve of the relationship between the distances of the side surfaces satisfy the following conditions: (0) in the region of 90% or more in the thickness direction of the gas barrier layer, the ratio of the number of atoms in the stone, oxygen In the ratio of the number of atoms and the ratio of the number of carbon atoms, the ratio of the number of germanium atoms is the second largest value; (ii) the carbon distribution curve has at least one extreme value. And (iii) the difference between the maximum value and the minimum value of the ratio of the number of carbon atoms in the carbon distribution curve is 5 atom% or more. 2. The organic EL device according to claim 1, further comprising: The film is bonded to the first film, and the organic EL device is sealed together with the first film; wherein the organic EL device is disposed between the second film and the first film of 1 323545 201228842. The method for producing an EL device includes the steps of: forming an organic EL element having a pair of electrodes, a light-emitting layer disposed between the electrodes, and an electron injection layer disposed between the electrodes and containing an ionic compound; a step of forming a first film of a gas barrier layer of an oxygen atom and a carbon atom; and bonding the first film and the second film so that the organic EL element is disposed between the first film and the second film a step; wherein, the ratio of the number of argon atoms, the ratio of the number of oxygen atoms, and the number of carbon atoms, respectively, for the total amount of the broken atom, the oxygen atom, and the carbon atom The enthalpy distribution curve, the oxygen distribution curve, and the carbon distribution curve of the relationship between the ratio and the distance from the one surface of the gas barrier layer in the thickness direction of the gas barrier layer satisfy the following conditions: (i) in the gas barrier layer In the region of 90% or more in the thickness direction, the ratio of the atomic number of the 5th atom, the ratio of the number of oxygen atoms, and the ratio of the number of carbon atoms, the ratio of the number of germanium atoms is the second largest value; (ii) the carbon distribution described above The curve has at least one extreme value; and (iii) the difference between the maximum value and the minimum value of the ratio of the carbon atoms of the carbon distribution curve is 5 atom% or more. 4. As described in claim 3 In the above-described bonding step, the organic EL element is disposed between the first film and the second film, and the organic film is overlapped with the first film, the second film, and 2 323545 201228842 In this state, the first film and the second film are bonded together by passing between the two rollers. 5. The method according to Item 3 or 4, wherein the ith film and the second film are bonded together in an atmosphere. 6. The method according to any one of claims 3 to 5, wherein the step of forming the organic EL element is described in the first film and the second film. Forming the aforementioned organic EL element on the film;

7. 8.

9. Further, after the step of forming the organic EL element, the film in which the organic EL element is formed is taken up in a roll shape together with the organic germanium element, and the step of storing the wound film and the organic EL element is performed. . The method of claim 6, wherein the wound film and the organic EL element are stored in an atmosphere. The method according to any one of claims 3 to 7, further comprising: after the first step, 'the first thin sheet and the second secret of the Yu Shu, and the aforementioned organic EL The component and the step of storing the EL element after the winding of the first thin defect. The second secret and the fourth (4) organic, such as the first thin film mentioned in item S of the patent application, the second film and Yu, are stored in the former ambiguous environment. Organic EL elements in the atmosphere j襄 323545 3