201225358 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種封裝結構，特別是發光二極體封裝結構 ，還涉及一種發光二極體封裝結構的製造方法。 [0002] 【先前技術】 習知技術中，為了提高發光二極體（Light Emitting Diode，LED)的發光效率’通常先在封裝基板上形成反 射杯結構，然後再在反射杯形成的凹陷中採用固晶打線 〇 [0003] 或覆晶的方式裝設發光二極體晶片。 由於發光二極體晶片需要裝設在凹陷令，所以固晶打線 或覆晶時機械設備需伸入凹陷中完成，機械設備作業的 空間受到限制，一則在技術上更有難度，二則容易影響 成品的良率。 [0004] 【發明内容】 有鑒於此，本發明旨在提供一種先電連接發光二極體再 形成反射杯的發光二極體封裝結構及其製造方法。 Ο [0005] 一種發光二極體封裝結構的製造方法，包括以下步驟： [0006] 提供一個基板，並於基板上形成兩電極； [0007] 將發光二極體晶片裝設於基板上並與電極電連結； [0008] 提供殼體，該殼體包括圍壁，該圍壁的高度大於所述基 板的厚度，該圍壁的底面裝設有電路結構，將基板置於 該殼體内，電極與電路結構電連接；以及 [0009] 形成封裝層並將發光二極體晶片封裝在殼體内。 099143131 表單編號A0101 第3頁/共19頁 0992074710-0 201225358 [0010] 設置於基板上的 種發光二極體封裝結構，包括基板， 電極，裝設於基板上絲红電連接的發光二極體晶片 ’以及覆蓋發光二極體晶片的封裝層，還包括包圍該基 板與封裝層的殼體，該殼體包括圍壁，該_的^大 於該基板的厚度，該圍壁的底部裝設有電路結構=電 路結構與所述電極電連接。 [0011] 先在封裝基板上進行固晶打線或覆晶工序將發光二極體 晶片電連接於基板上，再採用殼體套設於封裝基板形成 反射杯。採用此種工序步驟使固晶打線或覆晶的操作更 加容易’可提高電連接發光二極體晶片的良率，同時也 可使發光二極體的發光及反射效率得到保證。 [0012] 下面參照附圖，結合具體實施例對本發明作進一步的描 述0 【實施方式】 [0013] 如圖6和圖8所示，本發明一實施例的發光二極體封裝結 構包括基板10 ’形成於基板10上的電極2〇，裝設於基板 10上並與電極20電連接的發光二極體晶片3〇，包圍該基 板10的殼體40，以及覆蓋發光二極體晶片3〇的封裝層5〇 。殼體40包括圍壁41，該圍壁41的高度大於基板1〇的厚 度，使高出基板10的圍壁41形成反射杯結構。該圍壁41 的底部裝設有電路結構43 ’所述基板10的電極20抵靠於 該電路結構43上。 [0014] 以下，將結合其他附圖及實施例對本技術方案的發光二 極體封裝結構的製造方法進行詳細說明。 099143131 表單編號A0101 第4頁/共19頁 0992074710-0 201225358 [0015] [0016] Ο [0017] [0018]Ο 圖1為本發明一實施例發光二極體封裝結構製造方法的步 驟流程圖。請同時參考圖2，本發明發光二極體封裝結構 的製造方法步驟一為，首先提供一個基板1Q，該基板 呈平板狀。於該基板10上形成電極20，該電極2〇可藉由 機械、钱刻或鐳射加工等技術在基板10上形成。 請參閱圖3，接著在基板1〇上藉由固晶打線方式用導線32 將發光二極體晶片30與電極20電連接。由於該基板1〇上 表面平坦，無任何阻礙和遮擋，使打線的空間不受限制 ，故打線機能夠更加靈活地操作，同時有利於提高打線 良率。在其他實施例中，稂棣基板10的電極2〇設置不同 。還可以藉由覆晶的方式將發光二極體晶片3 〇電連接於 電極20上。 如圖4所示，提供一個殼體40，該殼體4〇包括圍壁“、設 於圍壁41底部的電路結構43以及緊貼圍壁41内壁的金屬 層4 6。 ：：；；· ：： . ....... ： ：! :: 該圍壁41包括兩個分離的半邊圍壁42 V在本實施例中， 該兩個半邊圍壁42採用金屬材料，並藉由連接塊託形成 的絕緣層圍合成一個矩形框並彼此絕緣。該圍壁41容置 空間的長度和寬度與基板10的長度和寬度相匹配，以保 證該基板10能夠自上而下推入該殼體40;該圍壁41的高 度大於基板10的厚度，以保證高出基板1〇的半邊圍壁42 形成反射杯結構。 該電路結構43採用導電金屬材料製成，供電極2〇電性連 接，並在基板10容置於該殻體40時起到擋持的作用。該 099143131 表單編號Α0101 第5頁/共19頁 0992074710-0 [0019] 201225358 電路結構43以該連接塊45為分界線左右彼此分離並絕緣 ，中間留出一段間隔44。將完成電性連接步驟的基板j 〇 向下推入殼體40内直至基板1〇底部的電極2〇與電路結構 43充分接觸從而構成電性連接。 [0020] 請同時參考圖6，該金屬層46分為導電層46a與反射層 46b與基板1〇相接觸的部分為導電層46a，其選用與電 路結構43相同的一般導電金屬材料，如銅等；基板1〇之 上的部分為反射層46b，其選用具有良好反射率的材料， 如銀等。當然在其他實施例中為了製作過程的簡便，可 將忒金屬層46採用與電路結構43相同的單一金屬材料製 成。 [0021] 圖5為本發明所提供另一實施例的殼體8〇的俯視示意圖。 該殼體8D包括圍壁81，緊關壁81内壁的金屬層86以及 圍壁81底部相互絕緣的電路結構83。該圍壁81呈矩形框 形狀，其可採用一體成型的注塑成型等工藝製成，再在 其内壁形成金屬層86，同時保證該圍壁们的高度大於基 板1〇的厚度，長寬能夠卡持基板1Q。當^，在採用非金 屬材質製作圍壁81時，也可與前述實施例相同先製作 兩個半邊圍壁’再將該兩個半邊圍壁連接固定。 [0022] 099143131 如圖6所示，形成封裝層5G於殼购内，並覆蓋發光二極 體晶片3〇。該«㈣是採用點膠卫藝完成，先在基板 1〇的上表面利用點膠機點上封裝谬，使封裝膠覆蓋發光 二極體晶片30並填滿殼體4〇包圍的區域，然後用模具擠 麼將封裝層50的上端與殼體40上端平齊。在其他實施例 中，可在準備料料混合螢祕，切以在封裝完成 第6頁/共〗9頁 0992074710-0 表單煸號A0101 201225358 [0023] Ο [0024] ❹ [0025] [0026] 099143131 後，於封裝層50的上表面塗覆一層螢光層（圖未示）。 圖7為本發明發光二極體封裝結構的製造方法步驟三的另 一實施方式得到的發光二極體封裝結構的結構示意圖。 提供兩個對稱的半邊圍壁42，該半邊圍壁42採用金屬材 料，其底部同樣鋪設有電路結構。將兩個半邊圍壁42對 稱放置於基板10的左右兩侧，該兩個半邊圍壁42的長度 之和小於基板10的長度。請同時參閱圖8，同時向内推動 半邊圍壁42，直到基板10的左右兩側邊緊靠半邊圍壁42 的内壁，自此兩個半邊圍壁42仍相距一定距離。再用絕 緣膠填補其中形成連接塊45，從而連接固定兩個半邊圍 壁42彼此絕緣並形成一個完整的殼體40。當然，該兩個 半邊圍壁42還可以採用非金屬材料製成，在與基板10固 定後，再採用膠體將該兩個半邊圍壁42連接固定。 然後形成封裝層50封裝於殼體40内，覆蓋發光二極體晶 片30。综上所述，本發明確已符合發明專利之要件，遂 依法提出專利申請。惟，以上所述者僅為本發明之較佳 實施方式，自不能以此限制本案之申請專利範圍。舉凡 熟悉本案技藝之人士援依本發明之精神所作之等效修飾 或變化，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1為本發明的發光二極體封裝結構的製造方法步驟流程 示意圖。 圖2至圖3為本發明的發光二極體封裝結構的製造方法步 驟一和步驟二所得到的發光二極體封裝結構的剖面示意 圖。 表單編號A0101 第7頁/共19頁 0992074Π0-0 201225358 [0027] 圖4為本發明的發光二極體封裝結構的製造方法步驟三所 提供的殼體結構的俯視示意圖。 [0028] 圖5為本發明的發光二極體封裝結構的製造方法步驟三所 提供另一實施例的殼體結構的俯視示意圖。 [0029] 圖6為本發明的發光二極體封裝結構的製造方法步驟四所 得到的發光二極體封裝結構的剖面示意圖。 [0030] 圖7至圖8為本發明另一實施方式的發光二極體封裝結構 的製造方法步驟三和步驟四所得到的發光二極體封裝結 構的俯視示意圖。 【主要元件符號說明】 [0031] 基板：10 [0032] 電極：20 [0033] 發光二極體晶片：30 [0034] 導線：32 [0035] 殼體：40、80 [0036] 圍壁：41、81 [0037] 半邊圍壁：42 [0038] 電路結構：43、83 [0039] 間隔：44 [0040] 連接塊：45 [0041] 金屬層·· 46、86 099143131 表單編號A0101 第8頁/共19頁 0992074710-0 201225358 [0042] 導電層 [0043] 反射層 [0044] 封裝層 :46a :46b :50201225358 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a package structure, particularly a light emitting diode package structure, and a method of manufacturing a light emitting diode package structure. [0002] In the prior art, in order to improve the luminous efficiency of a light emitting diode (LED), a reflective cup structure is usually formed on a package substrate, and then used in a recess formed by the reflective cup. A light-emitting diode wafer is mounted by a solid crystal 〇 [0003] or a flip chip. Since the light-emitting diode chip needs to be installed in the recessed order, the mechanical equipment needs to be extended into the recess when the solid crystal is wired or flipped, and the space for mechanical equipment operation is limited, one is technically more difficult, and the second is easily affected. The yield of the finished product. SUMMARY OF THE INVENTION In view of the above, the present invention is directed to a light emitting diode package structure in which a light emitting diode is electrically connected to form a reflective cup, and a method of fabricating the same. [0005] A method for fabricating a light emitting diode package structure, comprising the steps of: [0006] providing a substrate and forming two electrodes on the substrate; [0007] mounting the light emitting diode chip on the substrate and Electrode is electrically connected; [0008] providing a casing, the casing comprising a surrounding wall having a height greater than a thickness of the substrate, the bottom surface of the surrounding wall is provided with a circuit structure, and the substrate is disposed in the casing The electrodes are electrically connected to the circuit structure; and [0009] forming an encapsulation layer and encapsulating the light emitting diode chip within the housing. 099143131 Form No. A0101 Page 3 of 19 0992074710-0 201225358 [0010] A light-emitting diode package structure disposed on a substrate, comprising a substrate, an electrode, and a light-emitting diode mounted on the substrate The wafer and the encapsulation layer covering the LED substrate further include a casing surrounding the substrate and the encapsulation layer, the casing including a surrounding wall, the thickness of the substrate being greater than the thickness of the substrate, and the bottom of the surrounding wall is mounted Circuit structure = circuit structure is electrically connected to the electrode. [0011] First, a light-emitting diode or a flip chip process is performed on the package substrate to electrically connect the light-emitting diode wafer to the substrate, and then the shell is sleeved on the package substrate to form a reflective cup. By using such a process step, the operation of bonding or flip chip bonding is made easier. The yield of the light-emitting diode chip can be improved, and the light-emitting and reflection efficiency of the light-emitting diode can be ensured. [0012] The present invention will be further described with reference to the accompanying drawings, with reference to the accompanying drawings. [Embodiment] [0013] As shown in FIG. 6 and FIG. 8, a light emitting diode package structure according to an embodiment of the present invention includes a substrate 10 The electrode 2 formed on the substrate 10, the light-emitting diode wafer 3 mounted on the substrate 10 and electrically connected to the electrode 20, the case 40 surrounding the substrate 10, and the light-emitting diode chip 3 The encapsulation layer is 5〇. The housing 40 includes a surrounding wall 41 having a height greater than the thickness of the substrate 1 such that the surrounding wall 41 of the substrate 10 forms a reflective cup structure. The bottom of the surrounding wall 41 is provided with a circuit structure 43'. The electrode 20 of the substrate 10 abuts against the circuit structure 43. [0014] Hereinafter, a method of manufacturing the light emitting diode package structure of the present invention will be described in detail with reference to other drawings and embodiments. 099143131 Form No. A0101 Page 4 of 19 0992074710-0 201225358 [0015] [0018] FIG. 1 is a flow chart showing the steps of a method for fabricating a light emitting diode package structure according to an embodiment of the present invention. Referring to FIG. 2 simultaneously, in the first step of the manufacturing method of the LED package structure of the present invention, first, a substrate 1Q is provided, and the substrate has a flat shape. An electrode 20 is formed on the substrate 10, and the electrode 2 can be formed on the substrate 10 by techniques such as mechanical, magnetic or laser processing. Referring to FIG. 3, the LED array 30 is electrically connected to the electrode 20 by a wire 32 by means of a die bonding method on the substrate 1A. Since the upper surface of the substrate 1 is flat, without any obstruction and obstruction, the space for the wire is not limited, so the wire machine can operate more flexibly and at the same time, it is advantageous for improving the wire bonding yield. In other embodiments, the electrodes 2〇 of the germanium substrate 10 are set differently. It is also possible to electrically connect the light-emitting diode chip 3 to the electrode 20 by flip chip. As shown in FIG. 4, a housing 40 is provided, which includes a surrounding wall, a circuit structure 43 disposed at the bottom of the surrounding wall 41, and a metal layer 46 that abuts against the inner wall of the surrounding wall 41. ::; :: . . . : :! :: The surrounding wall 41 comprises two separate half-walls 42 V. In this embodiment, the two half-walls 42 are made of a metal material and are connected by The insulating layer formed by the block is formed by a rectangular frame and insulated from each other. The length and width of the receiving space of the surrounding wall 41 are matched with the length and width of the substrate 10 to ensure that the substrate 10 can be pushed into the casing from top to bottom. The height of the surrounding wall 41 is greater than the thickness of the substrate 10 to ensure that the half wall 42 of the substrate 1 is formed into a reflective cup structure. The circuit structure 43 is made of a conductive metal material for electrically connecting the electrodes 2 And functioning as a barrier when the substrate 10 is housed in the housing 40. The 099143131 form number Α 0101 5th page / 19 pages 0992074710-0 [0019] 201225358 The circuit structure 43 is bounded by the connecting block 45 Separate and insulated from each other, leaving a gap 44 in the middle. The electrical connection step will be completed. The substrate j 推 is pushed down into the casing 40 until the electrode 2 〇 at the bottom of the substrate 1 is in sufficient contact with the circuit structure 43 to form an electrical connection. [0020] Referring also to FIG. 6, the metal layer 46 is divided into a conductive layer 46a. The portion in contact with the reflective layer 46b and the substrate 1 is a conductive layer 46a, which is selected from the same general conductive metal material as the circuit structure 43, such as copper; the portion above the substrate 1 is a reflective layer 46b, which is preferably selected. A material of reflectivity, such as silver, etc. Of course, in other embodiments, the base metal layer 46 may be made of the same single metal material as the circuit structure 43 for ease of fabrication. [0021] FIG. A schematic view of a housing 8 of another embodiment. The housing 8D includes a surrounding wall 81, a metal layer 86 that closely seals the inner wall of the wall 81, and a circuit structure 83 that is insulated from each other at the bottom of the surrounding wall 81. The surrounding wall 81 has a rectangular frame. The shape can be formed by an integral injection molding process, and then a metal layer 86 is formed on the inner wall thereof, and at the same time, the height of the surrounding walls is greater than the thickness of the substrate 1 , and the length and width can hold the substrate 1Q. Adopting non When the surrounding wall 81 is made of the material, the two half-walls can be formed first and then the two half-walls can be connected and fixed. [0022] 099143131 As shown in FIG. 6, the encapsulation layer 5G is formed in the shell. It is purchased and covered with a light-emitting diode chip 3〇. The «(4) is completed by using a gel-and-protection technique. The top surface of the substrate is first coated with a dispenser on the top surface of the substrate, so that the package adhesive covers the light-emitting diode chip. 30 and filling the area surrounded by the casing 4, and then squeezing the upper end of the encapsulation layer 50 with the upper end of the casing 40. In other embodiments, the material can be mixed in the preparation of the material, and cut in the package. Completion Page 6/Total 9 Page 0992074710-0 Form No. A0101 201225358 [0023] ❹ [0025] [0026] After 099143131, a layer of phosphor is coated on the upper surface of the encapsulation layer 50 (Fig. Show). FIG. 7 is a schematic structural view of a light emitting diode package structure obtained by another embodiment of the third step of the manufacturing method of the light emitting diode package structure of the present invention. Two symmetrical half-walls 42 are provided, which are made of a metal material and the bottom of which is also provided with a circuit structure. The two half-walls 42 are symmetrically placed on the left and right sides of the substrate 10, and the sum of the lengths of the two half-walls 42 is smaller than the length of the substrate 10. Referring to FIG. 8 at the same time, the half wall 42 is pushed inwardly until the left and right sides of the substrate 10 abut against the inner wall of the half wall 42 from which the two half walls 42 are still at a certain distance. The connecting block 45 is formed by filling with an insulating glue, so that the connecting and fixing two half-walls 42 are insulated from each other and form a complete casing 40. Of course, the two half-walls 42 can also be made of a non-metallic material. After being fixed to the substrate 10, the two half-walls 42 are joined and fixed by a colloid. The encapsulation layer 50 is then encapsulated within the housing 40 to cover the LED array 30. In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic flow chart showing the steps of a method for fabricating a light emitting diode package structure according to the present invention. 2 to 3 are schematic cross-sectional views showing a light emitting diode package structure obtained in steps 1 and 2 of the method for fabricating a light emitting diode package structure of the present invention. Form No. A0101 Page 7 of 19 0992074Π0-0 201225358 [0027] FIG. 4 is a top plan view showing the structure of the casing provided in the third step of the manufacturing method of the LED package structure of the present invention. 5 is a top plan view showing a housing structure of another embodiment of the method for manufacturing a light emitting diode package structure according to the third step of the present invention. 6 is a cross-sectional view showing a light emitting diode package structure obtained in the fourth step of the method for fabricating a light emitting diode package structure according to the present invention. 7 to FIG. 8 are schematic top views of a light emitting diode package structure obtained in steps 3 and 4 of the method for fabricating a light emitting diode package according to another embodiment of the present invention. [Main component symbol description] [0031] Substrate: 10 [0032] Electrode: 20 [0033] Light-emitting diode wafer: 30 [0034] Conductor: 32 [0035] Housing: 40, 80 [0036] Fence: 41 , 81 [0037] Half-wall: 42 [0038] Circuit structure: 43, 83 [0039] Interval: 44 [0040] Connection block: 45 [0041] Metal layer · · 46, 86 099143131 Form No. A0101 Page 8 / 19 pages 0992074710-0 201225358 [0042] Conductive layer [0043] Reflective layer [0044] Encapsulation layer: 46a: 46b: 50
099143131 表單編號A0101 第9頁/共19頁 0992074710-0099143131 Form No. A0101 Page 9 of 19 0992074710-0