TWI414094B - Led package structure and the method of manufacturing the same - Google Patents

Led package structure and the method of manufacturing the same Download PDF

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Publication number
TWI414094B
TWI414094B TW99143131A TW99143131A TWI414094B TW I414094 B TWI414094 B TW I414094B TW 99143131 A TW99143131 A TW 99143131A TW 99143131 A TW99143131 A TW 99143131A TW I414094 B TWI414094 B TW I414094B
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Taiwan
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substrate
emitting diode
surrounding wall
light emitting
package structure
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TW99143131A
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Chinese (zh)
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TW201225358A (en
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Yau Tzu Jang
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Advanced Optoelectronic Tech
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Abstract

The present invention provides an LED package structure and the method of manufacturing the same. First, the LED chips are connected with the substrate electrically. Then, the substrate is accommodated into the housing, wherein a part of the housing forms a reflecting cup.

Description

發光二極體封裝結構及其製造方法 Light-emitting diode package structure and manufacturing method thereof

本發明涉及一種封裝結構,特別是發光二極體封裝結構,還涉及一種發光二極體封裝結構的製造方法。 The invention relates to a package structure, in particular to a light emitting diode package structure, and to a method for manufacturing a light emitting diode package structure.

習知技術中,為了提高發光二極體(Light Emitting Diode,LED)的發光效率,通常先在封裝基板上形成反射杯結構,然後再在反射杯形成的凹陷中採用固晶打線或覆晶的方式裝設發光二極體晶片。 In the prior art, in order to improve the luminous efficiency of a light emitting diode (LED), a reflective cup structure is usually formed on a package substrate, and then a solid crystal wire or a flip chip is used in the recess formed by the reflective cup. The method is to install a light emitting diode chip.

由於發光二極體晶片需要裝設在凹陷中,所以固晶打線或覆晶時機械設備需伸入凹陷中完成,機械設備作業的空間受到限制,一則在技術上更有難度,二則容易影響成品的良率。 Since the light-emitting diode chip needs to be installed in the recess, the mechanical equipment needs to be extended into the recess when the solid crystal is wired or flipped, and the space for mechanical equipment operation is limited, one is technically more difficult, and the second is easily affected. The yield of the finished product.

有鑒於此,本發明旨在提供一種先電連接發光二極體再形成反射杯的發光二極體封裝結構及其製造方法。 In view of the above, the present invention aims to provide a light emitting diode package structure in which a light emitting diode is electrically connected to form a reflective cup, and a manufacturing method thereof.

一種發光二極體封裝結構的製造方法,包括以下步驟:提供一個基板,並於基板上形成兩電極;將發光二極體晶片裝設於基板上並與電極電連結; 提供殼體,該殼體包括圍壁,該圍壁的高度大於所述基板的厚度,該圍壁的底面裝設有電路結構,將基板置於該殼體內,電極與電路結構電連接;以及形成封裝層並將發光二極體晶片封裝在殼體內。 A manufacturing method of a light emitting diode package structure, comprising the steps of: providing a substrate and forming two electrodes on the substrate; mounting the light emitting diode chip on the substrate and electrically connecting the electrode; Providing a casing, the casing comprising a surrounding wall having a height greater than a thickness of the substrate, the bottom surface of the surrounding wall is provided with a circuit structure, the substrate is disposed in the casing, and the electrode is electrically connected to the circuit structure; An encapsulation layer is formed and the light emitting diode chip is packaged within the housing.

一種發光二極體封裝結構,包括基板,設置於基板上的電極,裝設於基板上並與電極電連接的發光二極體晶片,以及覆蓋發光二極體晶片的封裝層,還包括包圍該基板與封裝層的殼體,該殼體包括圍壁,該圍壁的高度大於該基板的厚度,該圍壁的底部裝設有電路結構,該電路結構與所述電極電連接。 A light emitting diode package structure comprising a substrate, an electrode disposed on the substrate, a light emitting diode chip mounted on the substrate and electrically connected to the electrode, and an encapsulation layer covering the light emitting diode chip, further comprising surrounding the a housing of the substrate and the encapsulation layer, the housing comprising a surrounding wall having a height greater than a thickness of the substrate, the bottom of the surrounding wall being provided with a circuit structure electrically connected to the electrode.

先在封裝基板上進行固晶打線或覆晶工序將發光二極體晶片電連接於基板上,再採用殼體套設於封裝基板形成反射杯。採用此種工序步驟使固晶打線或覆晶的操作更加容易,可提高電連接發光二極體晶片的良率,同時也可使發光二極體的發光及反射效率得到保證。 First, the LED wiring is electrically connected to the substrate by performing a solid crystal wire bonding or a flip chip process on the package substrate, and then the housing is sleeved on the package substrate to form a reflective cup. The use of such a process step makes the operation of the solid crystal wire bonding or flip chip easier, improves the yield of the electrically connected LED chip, and ensures the light-emitting and reflection efficiency of the LED.

下面參照附圖,結合具體實施例對本發明作進一步的描述。 The invention will now be further described with reference to the specific embodiments thereof with reference to the accompanying drawings.

10‧‧‧基板 10‧‧‧Substrate

20‧‧‧電極 20‧‧‧ electrodes

30‧‧‧發光二極體晶片 30‧‧‧Light Emitter Wafer

32‧‧‧導線 32‧‧‧Wire

40、80‧‧‧殼體 40, 80‧‧‧ shell

41、81‧‧‧圍壁 41, 81‧‧‧ wall

42‧‧‧半邊圍壁 42‧‧‧Half wall

43、83‧‧‧電路結構 43, 83‧‧‧ circuit structure

44‧‧‧間隔 44‧‧‧ interval

45‧‧‧連接塊 45‧‧‧Connection block

46、86‧‧‧金屬層 46, 86‧‧‧ metal layer

46a‧‧‧導電層 46a‧‧‧ Conductive layer

46b‧‧‧反射層 46b‧‧‧reflective layer

50‧‧‧封裝層 50‧‧‧Encapsulation layer

圖1為本發明的發光二極體封裝結構的製造方法步驟流程示意圖。 1 is a schematic flow chart showing the steps of a method for fabricating a light emitting diode package structure according to the present invention.

圖2至圖3為本發明的發光二極體封裝結構的製造方法步驟一和步驟二所得到的發光二極體封裝結構的剖面示意圖。 2 to FIG. 3 are schematic cross-sectional views showing a light emitting diode package structure obtained in steps 1 and 2 of the method for fabricating a light emitting diode package structure according to the present invention.

圖4為本發明的發光二極體封裝結構的製造方法步驟三所提 供的殼體結構的俯視示意圖。 4 is a third step of the manufacturing method of the LED package structure of the present invention A schematic view of the housing structure provided.

圖5為本發明的發光二極體封裝結構的製造方法步驟三所提供另一實施例的殼體結構的俯視示意圖。 FIG. 5 is a schematic top plan view showing a housing structure of another embodiment provided by the third step of the manufacturing method of the LED package structure of the present invention.

圖6為本發明的發光二極體封裝結構的製造方法步驟四所得到的發光二極體封裝結構的剖面示意圖。 6 is a cross-sectional view showing a light emitting diode package structure obtained in the fourth step of the method for fabricating a light emitting diode package structure according to the present invention.

圖7至圖8為本發明另一實施方式的發光二極體封裝結構的製造方法步驟三和步驟四所得到的發光二極體封裝結構的俯視示意圖。 FIG. 7 to FIG. 8 are schematic top views of the LED package structure obtained in the third and fourth steps of the manufacturing method of the LED package structure according to another embodiment of the present invention.

如圖6和圖8所示,本發明一實施例的發光二極體封裝結構包括基板10,形成於基板10上的電極20,裝設於基板10上並與電極20電連接的發光二極體晶片30,包圍該基板10的殼體40,以及覆蓋發光二極體晶片30的封裝層50。殼體40包括圍壁41,該圍壁41的高度大於基板10的厚度,使高出基板10的圍壁41形成反射杯結構。該圍壁41的底部裝設有電路結構43,所述基板10的電極20抵靠於該電路結構43上。 As shown in FIG. 6 and FIG. 8 , a light emitting diode package structure according to an embodiment of the present invention includes a substrate 10 , an electrode 20 formed on the substrate 10 , and a light emitting diode mounted on the substrate 10 and electrically connected to the electrode 20 . The bulk wafer 30 surrounds the housing 40 of the substrate 10 and the encapsulation layer 50 covering the LED substrate 30. The housing 40 includes a surrounding wall 41 having a height greater than the thickness of the substrate 10 such that the surrounding wall 41 of the substrate 10 forms a reflective cup structure. A circuit structure 43 is mounted on the bottom of the surrounding wall 41, and the electrode 20 of the substrate 10 abuts against the circuit structure 43.

以下,將結合其他附圖及實施例對本技術方案的發光二極體封裝結構的製造方法進行詳細說明。 Hereinafter, a method of manufacturing the light emitting diode package structure of the present invention will be described in detail in conjunction with other drawings and embodiments.

圖1為本發明一實施例發光二極體封裝結構製造方法的步驟流程圖。請同時參考圖2,本發明發光二極體封裝結構的製造方法步驟一為,首先提供一個基板10,該基板10呈平板狀。於該基板10上形成電極20,該電極20可藉由機械、蝕刻或 鐳射加工等技術在基板10上形成。 1 is a flow chart showing the steps of a method for fabricating a light emitting diode package structure according to an embodiment of the invention. Referring to FIG. 2 simultaneously, in the first step of the manufacturing method of the LED package structure of the present invention, first, a substrate 10 is provided, and the substrate 10 has a flat shape. Forming an electrode 20 on the substrate 10, the electrode 20 can be mechanically, etched or Techniques such as laser processing are formed on the substrate 10.

請參閱圖3,接著在基板10上藉由固晶打線方式用導線32將發光二極體晶片30與電極20電連接。由於該基板10上表面平坦,無任何阻礙和遮擋,使打線的空間不受限制,故打線機能夠更加靈活地操作,同時有利於提高打線良率。在其他實施例中,根據基板10的電極20設置不同。還可以藉由覆晶的方式將發光二極體晶片30電連接於電極20上。 Referring to FIG. 3, the LEDs 30 are electrically connected to the electrodes 20 by wires 32 by means of a die bonding method on the substrate 10. Since the upper surface of the substrate 10 is flat without any obstruction and obstruction, the space for the wire is not limited, so the wire machine can operate more flexibly and at the same time, it is beneficial to improve the wire bonding yield. In other embodiments, the electrodes 20 are arranged differently depending on the substrate 10. It is also possible to electrically connect the light-emitting diode wafer 30 to the electrode 20 by flip chip.

如圖4所示,提供一個殼體40,該殼體40包括圍壁41、設於圍壁41底部的電路結構43以及緊貼圍壁41內壁的金屬層46。 As shown in FIG. 4, a housing 40 is provided. The housing 40 includes a surrounding wall 41, a circuit structure 43 disposed at the bottom of the surrounding wall 41, and a metal layer 46 abutting against the inner wall of the surrounding wall 41.

該圍壁41包括兩個分離的半邊圍壁42,在本實施例中,該兩個半邊圍壁42採用金屬材料,並藉由連接塊45形成的絕緣層圍合成一個矩形框並彼此絕緣。該圍壁41容置空間的長度和寬度與基板10的長度和寬度相匹配,以保證該基板10能夠自上而下推入該殼體40;該圍壁41的高度大於基板10的厚度,以保證高出基板10的半邊圍壁42形成反射杯結構。 The surrounding wall 41 includes two separate half-walls 42. In the present embodiment, the two half-walls 42 are made of a metal material and are surrounded by an insulating layer formed by the connecting block 45 to form a rectangular frame and insulated from each other. The length and width of the accommodating space of the surrounding wall 41 are matched with the length and width of the substrate 10 to ensure that the substrate 10 can be pushed into the casing 40 from top to bottom; the height of the surrounding wall 41 is greater than the thickness of the substrate 10, The reflector cup structure is formed to ensure that the half wall 42 of the substrate 10 is raised.

該電路結構43採用導電金屬材料製成,供電極20電性連接,並在基板10容置於該殼體40時起到擋持的作用。該電路結構43以該連接塊45為分界線左右彼此分離並絕緣,中間留出一段間隔44。將完成電性連接步驟的基板10向下推入殼體40內直至基板10底部的電極20與電路結構43充分接觸從而構成電性連接。 The circuit structure 43 is made of a conductive metal material, and the electrode 20 is electrically connected, and functions as a barrier when the substrate 10 is received in the casing 40. The circuit structure 43 is separated and insulated from each other by the connecting block 45 as a boundary line, with a space 44 left therebetween. The substrate 10 that has completed the electrical connection step is pushed down into the casing 40 until the electrode 20 at the bottom of the substrate 10 is in sufficient contact with the circuit structure 43 to constitute an electrical connection.

請同時參考圖6,該金屬層46分為導電層46a與反射層46b, 與基板10相接觸的部分為導電層46a,其選用與電路結構43相同的一般導電金屬材料,如銅等;基板10之上的部分為反射層46b,其選用具有良好反射率的材料,如銀等。當然在其他實施例中為了製作過程的簡便,可將該金屬層46採用與電路結構43相同的單一金屬材料製成。 Referring to FIG. 6 at the same time, the metal layer 46 is divided into a conductive layer 46a and a reflective layer 46b. The portion in contact with the substrate 10 is a conductive layer 46a, which is selected from the same general conductive metal material as the circuit structure 43, such as copper, etc.; the portion above the substrate 10 is a reflective layer 46b, which is selected from materials having good reflectivity, such as Silver and so on. Of course, in other embodiments, the metal layer 46 can be made of the same single metal material as the circuit structure 43 for ease of fabrication.

圖5為本發明所提供另一實施例的殼體80的俯視示意圖。該殼體80包括圍壁81,緊貼圍壁81內壁的金屬層86以及圍壁81底部相互絕緣的電路結構83。該圍壁81呈矩形框形狀,其可採用一體成型的注塑成型等工藝製成,再在其內壁形成金屬層86,同時保證該圍壁81的高度大於基板10的厚度,長寬能夠卡持基板10。當然,在採用非金屬材質製作圍壁81時,也可與前述實施例相同,先製作兩個半邊圍壁,再將該兩個半邊圍壁連接固定。 FIG. 5 is a top plan view of a housing 80 according to another embodiment of the present invention. The housing 80 includes a surrounding wall 81, a metal layer 86 that abuts against the inner wall of the surrounding wall 81, and a circuit structure 83 that is insulated from each other at the bottom of the surrounding wall 81. The surrounding wall 81 has a rectangular frame shape, and can be formed by an integral injection molding process, and then forms a metal layer 86 on the inner wall thereof, and at the same time ensures that the height of the surrounding wall 81 is greater than the thickness of the substrate 10, and the length and width can be carded. Holding the substrate 10. Of course, when the surrounding wall 81 is made of a non-metallic material, as in the previous embodiment, two half-walls are first formed, and the two half-walls are connected and fixed.

如圖6所示,形成封裝層50於殼體40內,並覆蓋發光二極體晶片30。該封裝層50是採用點膠工藝完成,先在基板10的上表面利用點膠機點上封裝膠,使封裝膠覆蓋發光二極體晶片30並填滿殼體40包圍的區域,然後用模具擠壓將封裝層50的上端與殼體40上端平齊。在其他實施例中,可在準備封裝膠時混合螢光粉,也可以在封裝完成後,於封裝層50的上表面塗覆一層螢光層(圖未示)。 As shown in FIG. 6, an encapsulation layer 50 is formed within the housing 40 and covers the LED array 30. The encapsulation layer 50 is completed by a dispensing process. The encapsulant is first applied to the upper surface of the substrate 10 by a dispenser, so that the encapsulant covers the LED wafer 30 and fills the area surrounded by the housing 40, and then the mold is used. The upper end of the encapsulation layer 50 is flush with the upper end of the casing 40. In other embodiments, the phosphor powder may be mixed during preparation of the encapsulant, or a phosphor layer (not shown) may be coated on the upper surface of the encapsulation layer 50 after the package is completed.

圖7為本發明發光二極體封裝結構的製造方法步驟三的另一實施方式得到的發光二極體封裝結構的結構示意圖。提供兩個對稱的半邊圍壁42,該半邊圍壁42採用金屬材料,其底部 同樣鋪設有電路結構。將兩個半邊圍壁42對稱放置於基板10的左右兩側,該兩個半邊圍壁42的長度之和小於基板10的長度。請同時參閱圖8,同時向內推動半邊圍壁42,直到基板10的左右兩側邊緊靠半邊圍壁42的內壁,自此兩個半邊圍壁42仍相距一定距離。再用絕緣膠填補其中形成連接塊45,從而連接固定兩個半邊圍壁42彼此絕緣並形成一個完整的殼體40。當然,該兩個半邊圍壁42還可以採用非金屬材料製成,在與基板10固定後,再採用膠體將該兩個半邊圍壁42連接固定。 FIG. 7 is a schematic structural view of a light emitting diode package structure obtained by another embodiment of the third step of the manufacturing method of the light emitting diode package structure of the present invention. Two symmetrical half-walls 42 are provided, the half-walls 42 being made of a metal material and having a bottom The same circuit structure is also laid. The two half-walls 42 are symmetrically placed on the left and right sides of the substrate 10, and the sum of the lengths of the two half-walls 42 is smaller than the length of the substrate 10. Referring to FIG. 8 at the same time, the half wall 42 is pushed inwardly until the left and right sides of the substrate 10 abut against the inner wall of the half wall 42 from which the two half walls 42 are still at a certain distance. The connecting block 45 is formed by filling with an insulating glue, so that the connecting and fixing the two half-walls 42 are insulated from each other and form a complete casing 40. Of course, the two half-walls 42 can also be made of a non-metallic material. After being fixed to the substrate 10, the two half-walls 42 are connected and fixed by a colloid.

然後形成封裝層50封裝於殼體40內,覆蓋發光二極體晶片30。綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自 不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人 士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 The encapsulation layer 50 is then encapsulated within the housing 40 to cover the LED array 30. In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above is only a preferred embodiment of the present invention, since This cannot limit the scope of patent application in this case. Anyone who is familiar with the skills of this case Equivalent modifications or variations made by Shishi in accordance with the spirit of the present invention are intended to be included in the scope of the following claims.

Claims (9)

一種發光二極體封裝結構的製造方法,包括以下步驟:提供一個基板,並於基板上形成兩電極;將發光二極體晶片裝設於基板上並與電極電連結;提供殼體,該殼體包括圍壁,其為非金屬材料,該圍壁的高度大於所述基板的厚度,該圍壁的底面裝設有電路結構,該圍壁內表面具有金屬層,該金屬層包括與基板接觸的導電層和位於基板以上的反射層,導電層與反射層的材料不同,將基板置於該殼體內,電極與電路結構電連接;以及形成封裝層並將發光二極體晶片封裝在殼體內。 A manufacturing method of a light emitting diode package structure, comprising the steps of: providing a substrate and forming two electrodes on the substrate; mounting the light emitting diode chip on the substrate and electrically connecting the electrode; providing a housing The body includes a surrounding wall, which is a non-metallic material, the height of the surrounding wall is greater than the thickness of the substrate, and the bottom surface of the surrounding wall is provided with a circuit structure, the inner surface of the surrounding wall has a metal layer, and the metal layer includes contact with the substrate a conductive layer and a reflective layer above the substrate, the conductive layer and the reflective layer are different in material, the substrate is placed in the case, the electrode is electrically connected to the circuit structure; and the package layer is formed and the light emitting diode chip is packaged in the case . 如申請專利範圍第1項所述的發光二極體封裝結構的製造方法,其中所述圍壁包括兩個相互間隔的半邊圍壁,該兩個半邊圍壁藉由非金屬材料連接固定。 The manufacturing method of the light-emitting diode package structure according to claim 1, wherein the surrounding wall comprises two mutually spaced half-walls, and the two half-walls are connected and fixed by a non-metal material. 如申請專利範圍第1項所述的發光二極體封裝結構的製造方法,其中所述圍壁為非金屬材料,並採用一體成型的方式製成。 The method for manufacturing a light-emitting diode package structure according to claim 1, wherein the surrounding wall is made of a non-metal material and is formed by integral molding. 如申請專利範圍第2項所述的發光二極體封裝結構的製造方法,其中所述將基板置於殼體內的步驟是先用非金屬材料將兩個半邊圍壁連接固定形成殼體,再將基板從豎直方向推入殼體中。 The method for manufacturing a light-emitting diode package structure according to claim 2, wherein the step of placing the substrate in the casing is to first connect the two half-walls with a non-metal material to form a casing, and then Push the substrate from the vertical direction into the housing. 如申請專利範圍第2項所述的發光二極體封裝結構的製造方法,其中所述將基板置於殼體內的步驟是先將兩個半邊圍壁 從基板左右兩邊水平推進,使基板卡持固定,再填入非金屬材料,將兩個半邊圍壁連接固定。 The method for manufacturing a light emitting diode package structure according to claim 2, wherein the step of placing the substrate in the casing is to first divide the two half walls Push horizontally from the left and right sides of the substrate to hold the substrate, and then fill in the non-metallic material to connect and fix the two half-walls. 如申請專利範圍第3項所述的發光二極體封裝結構的製造方法,其中所述將基板置於殼體內的步驟是直接將基板從豎直方向推入圍壁中,使所述電極抵靠在電路結構上。 The manufacturing method of the light emitting diode package structure according to claim 3, wherein the step of placing the substrate in the casing directly pushes the substrate into the surrounding wall from the vertical direction, so that the electrode abuts On the circuit structure. 一種發光二極體封裝結構,包括基板,設置於基板上的電極,裝設於基板上並與電極電連接的發光二極體晶片,以及覆蓋發光二極體晶片的封裝層,其改良在於:還包括包圍該基板與封裝層的殼體,該殼體包括圍壁,其為非金屬材料,該圍壁的高度大於該基板的厚度,該圍壁的底部裝設有電路結構,該圍壁內表面具有金屬層,該金屬層包括與基板接觸的導電層和位於基板以上的反射層,導電層與反射層的材料不同,該電路結構與所述電極電連接。 A light emitting diode package structure comprising a substrate, an electrode disposed on the substrate, a light emitting diode chip mounted on the substrate and electrically connected to the electrode, and an encapsulation layer covering the LED chip, wherein the improvement is: The housing further includes a casing surrounding the substrate and the encapsulation layer, the casing including a surrounding wall having a non-metallic material, the height of the surrounding wall being greater than the thickness of the substrate, and the bottom of the surrounding wall is provided with a circuit structure, the surrounding wall The inner surface has a metal layer including a conductive layer in contact with the substrate and a reflective layer above the substrate, the conductive layer being different from the material of the reflective layer, the circuit structure being electrically connected to the electrode. 如申請專利範圍第7項所述的發光二極體封裝結構,其中所述圍壁包括兩個相互間隔的半邊圍壁,該兩個半邊圍壁藉由非金屬材料連接固定。 The light emitting diode package structure of claim 7, wherein the surrounding wall comprises two mutually spaced half-walls, the two half-walls being fixed by a non-metallic material. 如申請專利範圍第7項所述的發光二極體封裝結構,其中所述圍壁為採用非金屬材料一體成型。 The light emitting diode package structure according to claim 7, wherein the surrounding wall is integrally formed by using a non-metal material.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200737541A (en) * 2006-03-24 2007-10-01 Advanced Optoelectronic Tech Package structure of LED
TW201042780A (en) * 2009-02-19 2010-12-01 Philips Lumileds Lighting Co Compact molded LED module

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200737541A (en) * 2006-03-24 2007-10-01 Advanced Optoelectronic Tech Package structure of LED
TW201042780A (en) * 2009-02-19 2010-12-01 Philips Lumileds Lighting Co Compact molded LED module

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