201225204 六、發明說明： 【發明所屬之技術領域】 該發明係關於靜電吸盤及其製造方法。 【先前技術】 在半導體製程中之離子注入處理，或在液晶製造領域 中之基板貼合處理等，在各種狀況下使用靜電吸盤裝置。 近年來，如半導體基板或玻璃基板等般，隨著以靜電吸盤 裝置吸附之對象物大型化，提高靜電吸盤裝置之吸附力， 或減少該些基板之背面之微粒成爲重要之課題。 其中，爲了增大靜電吸盤裝置之吸附力，針對被載置 在基盤上之靜電吸盤，除了提高施加於其吸附電極之電壓 ，或縮窄雙極型之吸附電極間之距離外，也考慮使半導體 基板或玻璃基板等般之吸附對象之板狀工件和吸附電極之 距離接近等。但是，因該些中之任一者與電性之耐絕緣性 之問題具有關係，故不被期待容易大幅度地增大吸附力。 於是，在液晶顯示器等之平面顯示器之製造中所使用 之真空貼合裝置中，所知的有在吸附保持基板（板狀工件 )之保持板配置黏著材料和靜電吸盤，依此形成基板吸附 面（參照專利文獻1、2)。但是，在該裝置中，雖然基板 之大部分被黏著材料保持，在位於基板四角落之處，配設 靜電吸盤，而補強基板之保持，但是由於黏著材料和靜電 吸盤在保持板以平頂狀形成基板吸附面，故可想像有下述 問題。 -5- 201225204 即是，藉由靜電吸盤之吸附力使用電性之力量，由於 在與基板之間產生多數電荷，故即使切斷與靜電吸盤之吸 附電極連接之電源，電荷也不會立即消滅。因此，當在基 板帶電之狀態下從裝置拆卸時，則有使高價之基板受損之 虞。再者，當由靜電吸盤所構成之基板吸附面和由黏著材 料所構成之基板吸附面非相同素材之材料時，由於在處理 基板之過程中熱膨脹率等不同，故有無法對基板背面形成 平坦面之情形，吸附力則成爲不均勻，有基板之處理或基 板之冷卻效果等產生差異之虞。並且，也考慮到處理氛圍 中之微粒被靜電吸盤吸引，接觸此而污染基板背面之問題 〇 並且，就以熱傳導性高之基板載置裝置而言，所知的 有在內部具備電極之介電體之表面凹部，配設有能夠壓縮 之彈性構件（參照專利文獻3 )。然而，在該裝置中，藉 由一面吸附基板而壓縮彈性構件，一面使基板背面接觸於 介電體之表面，來維持良好之熱傳導性，反而使得彈性構 件之反力妨礙靜電吸盤之吸附力，再者也難以平坦之吸附 面來吸附基板全體。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特開2005-35 1 96 1號公報（段落 0021、段落0025、第2圖） 〔專利文獻2〕日本專利第4 1 1 7 3 3 8號公報（段落0 0 1 3 201225204 〔專利文獻3〕日本專利第4046424號公報（段落0010 、0025 ) 【發明內容】 〔發明所欲解決之課題〕 本案發明者等根據如此之狀況，針對充分具備耐絕緣 性且可以提高吸附力，並且可以對吸附對象之板狀工件之 背面維持平坦之面而予以吸附保持，而且抑制板狀工件之 帶電量，降低於拆卸基板時造成之負荷，並且可及性地排 除微粒等附著於板狀工件背面之可能性的靜電吸盤裝置， 精心硏究之結果，找出藉由在基盤上突出設置由樹脂材料 所構成之保持構件，而吸附保持板狀工件，並且以較保持 構件低之方式在基盤上配設靜電吸盤，而在對板狀工件呈 非接觸之狀態下進行靜電吸引，可以同時解決上述般之課 題，而完成本發明。 因此，本發明之目的係提供發現相對於板狀工件優良 的吸附力，並且可以對板狀工件之背面維持平坦之面，而 且於處理後可以容易拆卸板狀工件，並且可以可及性地迴 避板狀工件經裝置而被污染之可能性的電吸盤裝置。 再者，本發明之另外的目的，係提供置製造上述般之 靜電吸盤裝置之方法。 〔用以解決課題之手段〕 201225204 即是，本發明係在基盤上突出設置由樹脂材料所構成 之保持構件，而可以吸附保持板狀工件，並且在經保持構 件而被形成於板狀工件和基盤之間的空間之至少一部分， 以成爲較保持構件低之方式，配設有在內部具有吸附電極 之靜電吸盤，而在對板狀工件呈非接觸之狀態下，靜電吸 盤靜電吸引板狀工件。 再者，本發明之靜電吸盤裝置之製造方法之特徵在於 :在絕緣薄片構件之一方之面上，形成具有特定之開口部 的吸附電極，以至少使開口部被絕緣性之接著樹脂塡充之 方式，在吸附電極側貼附其他之絕緣薄片構件而製作靜電 吸盤，接著，以通過吸附電極之開口部而貫通靜電吸盤之 表背面間之方式，形成比開口部小一圈的貫通孔之後，藉 由將該靜電吸盤貼附在基盤，並且以由樹脂材料所構成之 保持構件從靜電吸盤突出之方式，對應於貫通孔而使保持 構件突出設置在基盤上，保持構件可以吸附保持板狀工件 ，並且在對板狀工件呈非接觸之狀態下，使成爲靜電吸盤 可以靜電吸引板狀工件。 本發明之靜電吸盤裝置係在基盤上突出設置由樹脂材 料所構成之保持構件，而吸附保持板狀工件。針對保持構 件之配置位置或形狀、數量等，若爲以可以吸附保持板狀 工件之方式，形成工件吸附面者時，則並無特別限制，較 理想係可以例示下述般之形態的保持構件。即是，即使使 複數之突起保持構件突出設置在基盤上，形成壓花狀之工 件吸附面，使可以略均句地吸附保持板狀工件之自重亦可 -8- 201225204 。再者，即使以沿著板狀工件之外周部之 外周凸條保持構件，而使板狀工件之外周 並且，即使以從板狀工件之中心朝向外周 之方式，突出設置複數凸條保持構件亦可 突起保持構件和凸條保持構件，而形成工 針對形成保持構件之樹脂材料，必須 圓爲代表之半導體基板、玻璃基板、藍寶 板狀工件，並且必須可以一面形成工件吸 狀工件。由如此之觀點來看以由彈性^ 1 OMPa以下之樹脂材料形成保持構件爲佳 2MPa以上3 MPa以下之樹脂材料形成保持 者，吸附板狀工件之原理不並明確，其中 子間力有關係。因此，由在與板狀工件之 間力之觀點來看，吸附板狀工件而形成工 構件之頂面，係以三次元平均表面粗度（ 以上0.55/zM以下爲佳，以0.4ym以上〇.: 。就以樹脂材料之具體例而言，可以舉出 烯- 丁二烯橡膠、氯磺化聚乙烯橡膠、丙 乙烯橡膠、乙丙橡膠、氯丁橡膠、丁二烯 異丁烯-異戊二烯橡膠、氨基甲酸乙酯橡 有上述般之彈性率或表面形狀的矽氧樹脂 針對突出設置保持構件之基盤，使至 之處具有平面度爲20^111幾下之平坦面爲 使配置有保持構件之處，及配設有靜電吸 方式，突出設置 部不捲曲亦可。 部直徑順序增大 ，並且即使組合 件吸附面亦可。 可以吸附以矽晶 石基板等之該些 附面一面保持板 替爲0.5MPa以上 ，以由彈性率爲 構件爲更佳。再 之一推測爲與分 間容易發現分子 件吸附面之保持 SRa )爲 0.01 // m 5 // m以下爲更佳 矽氧樹脂、苯乙 烯腈-丁二烯-苯 橡膠、氟橡膠、 膠等，其中以具 爲適合。 少配設保持構件 佳，詳細而言， 盤之處，也具有 -9- 201225204 平面度爲20#m以下，最理想平面度l〇// m以下之 爲佳。至少，若藉由在如此之平坦面突出設置保持 ，保持構件之頂面反應基盤之平坦面’可以以保持 之工件吸附面對板狀工件予以吸附保持。 再者，本發明中之靜電吸盤裝置，係設爲在經 件而被形成在板狀工件和基盤之間的空間置至少一 於基盤上配置靜電吸盤，較理想係設成在上述空間 ，於基盤上配置靜電吸盤。其中，設成靜電吸盤之 較保持構件之高度低，在靜電吸盤和板狀工件呈非 狀態下，靜電吸引板狀工件。該靜電吸盤係在內部 附電極，在靜電吸盤之表背面及側面中，不使吸附 出，較理想係使電性絕緣部介於突出設置於基盤上 構件和吸附電極之間，確實地保持吸附電極之電性 於設成靜電吸盤較保持構件低時，以吸附保持 件，而維持靜電吸盤和板狀工件非接觸之狀態之方 慮樹脂材料之彈性率等而予以適當設定爲佳，但是 附板狀工件之狀態下的保持構件之高度和靜電吸盤 的高低間距離，也必須考慮到不能降低藉由靜電吸 得之庫倫力等之電性的力量來吸引板狀工件之動作 想係靜電吸盤在板狀工件側具備之上部介電層之 1 /5以下，下限値爲5 // m爲佳，更理想係靜電吸盤 工件側具備之上部介電層之厚度的1/6以下，下限値 爲佳。 平坦面 構件時 平坦性 保持構 部分， 之全部 表面皆 接觸之 具備吸 電極露 之保持 絕緣性 板狀工 式，考 針對吸 之表面 盤所取 ，較理 厚度的 在板狀 爲7 y m -10- 201225204 就以製造本發明之靜電吸盤裝置之方法而言，最佳爲 可以例示下述般之方法。首先，在由樹脂、陶磁等所構成 之絕緣薄片構件之一方之面，塗佈或印刷導電性塗料而形 成具有特定之.開口部的吸附電極。再者，藉由金凋之蒸鍍 或濺鍍形成電極面，使用黏合薄片等而冲壓壓合銅箔等之 金屬箔等而形成電極面，藉由使用遮罩之蝕刻處理，形成 具有特定之開口部的吸附電極。或是，對具備有金屬箔之 絕緣薄片構件，藉由使用遮罩之蝕刻處理，由金屬箔形成 具有特定之開口部的吸附電極。接著，至少使開口部被矽 氧樹脂或環氧樹脂等之絕緣性之接著樹脂塡充，在吸附電 極側貼附另外之絕緣薄片構件，依此製作具備有上部介電 層、吸附電極及下部介電層的靜電吸盤。在此，就以絕緣 性之接著樹脂而言，即使塗佈液狀之接著劑亦可，即使使 樹脂製之黏合薄片等介於中間，藉由冲壓壓合使其一部分 塡充至開口部亦可。 然後，以通過吸附電極之開口部而貫通靜電吸盤之表 背面間之方式，若形成較開口部小一圈之貫通孔時，則使 由絕緣性接著樹脂所構成之電性絕緣部介於吸附電極之開 口部和貫通孔之間。並且，若吸附電極之開口部和形成於 靜電吸盤之貫通孔中之任一者皆配合突出設置於基盤上之 保持構件之數量或形狀等，而予以適當設計即可。 接著，透過接著劑或黏合薄片等，將該靜電吸盤貼附 在基盤上，並且以由樹脂材料所構成之保持構件從靜電吸 盤突出之方式，在貫通孔插入保持構件而突出設置在基盤 -11 - 201225204 上，依此可以取得本發明之靜電吸盤裝置。然後’藉由對 靜電吸盤之吸附電極連接電源，可一面以靜電吸盤之電性 的力量在非接觸之狀態下對板狀工件靜電吸引，一面使保 持構件吸附保持板狀工件。 爲了取得本發明之靜電吸盤裝置，當然除了上述以外 之方法亦可，例如可舉出事先在基盤上突出設置特定之保 持構件，對形成在保持構件之間的凹部塗佈絕緣性材料或 印刷而形成下部介電層，在其上方使用導電性材料而形成 特定之吸附電極，又從上方塗佈或印刷絕緣性材料而形成 上部介電層，使上部介電層較保持構件低而在基盤上形成 靜電吸盤之方法。 針對靜電吸盤在板狀工件側具備之上部介電層，及在 基盤側具備之下部介電層，兩者雖然即使由相同材質形成 亦可，即使使用互相不同材質者亦可，但是至少上部介電 層考慮到低發塵性或介電率等，較理想係由聚醯亞胺膜、 PET膜、液晶聚合物膜等之樹脂膜所構成爲佳。更理想係 上部介電層及下部介電層皆以該些樹脂膜所形成爲佳。 再者’針對上部介電層及下部介電層之厚度，以各爲 25 M m以上120 e m以下爲佳，較理想係25 // m以上50 y m以 下爲佳。該些厚度中之任一者若在上述範圍內時，則可以 確保相對於吸附電極之電性絕緣性，其中在上部介電層側 ’相對於板狀工件可以效率佳發現電性之力量。再者，介 於吸附電極之開口部和貫通孔之間的電性絕緣部之厚部， 爲了確實地確保電性絕緣性，以1 m m以上爲佳，較理想係 -12- 201225204 2mm以上3mm以下爲佳。雖然僅以增加電性絕緣部之厚度 的部分更容易確保絕緣性，但是當電性絕緣部之厚度超過 5mm，因效果幾乎要飽和，或減少了吸附電極之面積，故 較不理想。 再者，針對吸附電極，即使採用在與板狀工件之間施 加電壓，所謂的單極型，或是在電極間設置電位差，所謂 的雙極型亦可。於雙極型之吸附電極之時，即使相同平面 狀地排列電極亦可，即使隔著電極間絕緣層，而上下排列 電極亦可。單極型或雙極型之選擇，係可以因應板狀工件 之種類或板狀工件被處理之條件等而適當予以選定。再者 ，即使針對吸附電極之形狀，可以因應例如平板狀、半圓 狀、梳齒狀或網目般之圖案形狀等，板狀工件之種類或尺 寸等而適當予以選定。並且，吸附電極之厚度並不特別限 制，但是若考慮設計等時，實用上則以〇 · 1 iz m以上3 0 // m 以下程度爲佳。 針對基盤，其材質並不特別限制，可以舉出鋁或鋁合 金、石英玻璃、陶磁、聚醯亞胺、不鏽鋼等。再者，於設 置靜電吸盤或保持構件之前，事先藉由機械加工或飩刻處 理等，以具有特定之平面度之方式，對基盤表面施予平坦 化處理爲佳。並且，即使設爲在基盤之表面設置凹凸而可 以調節靜電吸盤和保持構件之高度關係，但是此時，以個 別地具有特定之平面度之方式將配設有保持構件或靜電吸 盤之處予以平坦化處理爲佳。再者，在基盤上，即使與眾 知之靜電吸盤裝置之情形相同，具備用以流通冷卻媒體之 -13- 201225204 流路，使板狀工件之背面側上推之上推銷等當然亦可。 〔發明之效果〕 若藉由本發明之靜電吸盤裝置時，由於突出設置在基 盤上之由樹脂材料所構成之保持構件可以吸附保持板狀工 件，並且在對板狀工件呈非接觸之狀態下，靜電吸盤靜電 吸引板狀工件，故可以一面充分確保電性絕緣性，一面提 高靜電吸盤裝置之吸附力。再者，由於對板狀工件之背面 維持平坦之面而予以吸附保持，故可以均勻地進行板狀工 件之冷卻效果或板狀工件之處理。並且，由於相對於靜電 吸盤裝置之厚度方向於保持構件之下側不存在靜電吸盤， 而且板狀工件和靜電吸盤係在非接觸之狀態下吸附保持， 故可以抑制切斷電源後之板狀工件之帶電量，而降低拆下 板狀工件之時之負荷，可及性地排除爲例等對板狀工件之 背面附著之可能性。 【實施方式】 以下，一面根據附件之圖面，一面更具體性地說明本 發明。 〔實施例〕 第1圖及第2圖係表示與本發明之實施例有關之靜電吸 盤裝置。第1圖爲斜視說明圖，第2圖爲表示第1圖中之A-A 剖面之剖面說明圖（一部分）。該靜電吸盤裝置係在基盤 -14- 201225204 1上突出設置由樹脂材料所構成之保持構件2，可以吸附保 持1 2吋之矽晶圓（板狀工件）W，並且經由保持構件2而形 成在矽晶圓w和基盤1之間的空間內，以較保持構件2低之 方式配設在內部具備吸附電極之靜電吸盤3，靜電吸盤3和 矽晶圓w在非接觸之狀態下，靜電吸盤3可以靜電吸引矽晶 圓w。 其中，基盤1爲直徑29411111^高度17.5111111之鋁合金製， 配置有保持構件2和靜電吸盤3之載置面la係藉由硏磨加工 而被平坦化處理成平面度15μπι。再者，在該基盤1之內部 ，形成有流通冷卻氣體等之冷媒流路（圖示外）。 被配置於基盤1之載置面la之保持構件2，係由突出設 置成壓花狀之合計106個之突起保持構件2a，和突出設置 成沿著矽晶圓w之外周部的外周凸條保持構件2b所構成， 任一者之高度皆爲140 " m，圓柱狀之突起保持構件2a之頂 面之直徑爲2mm，外周凸條保持構件2b之頂面之寬度爲 2mm。該些保持構件2係使用彈性率2.7MPa之矽氧樹脂（ 扶桑橡膠產業公司製作，產品名：Sirius )而形成，吸附 矽晶圓w而形成工件吸附面之保持構件2 (突起保持構件2a 及外周凸條保持構件2b )之頂面係三次元平均表面粗度（ SRa )爲0.46 ym。並且，在附件圖面中，針對突起保持構 件2a之一部分、後述之吸附電極之開口部5 c之一部分及靜 電吸盤之貫通孔8，因應紙面之狀況而省略。 另外，靜電吸盤3係以下述般而形成。首先，如第3圖 (a)所示般，在厚度爲5〇em而成爲上部介電層之聚醯亞 -15- 201225204 胺膜（絕緣薄片構件）4之單面側，藉由網版印刷塗佈導 電性油墨，如第4圖所示般，形成半圓狀之第一吸附電極 5a及第二吸附電極5b (直徑皆爲288 mm，厚度皆爲5 ym) ，並且如第3圖（b)所示般，對應於配置在基盤1之突起 保持構件2a之位置及形狀，形成開口徑（直徑）ch = 5mm 之開口部5c，成爲雙極性之吸附電極5。並且，在所取得 之第一吸附電極5a和第二吸附電極5b，以可以連接於直流 電源（圖示外）之方式，安裝有圖示外之連接端子。 接著，如第3圖（c)所示般’經由厚度15//m之環氧 樹脂製黏合薄片6，在吸附電極5側’重疊厚度爲50μιη而 成爲下部介電層之聚醯亞胺（絕緣薄片構件）7而予以沖 壓加工，且使在吸附電極5之開口部5c塡充黏合薄片6之一 部分，而取得疊層物。接著，以與吸附電極之開口部5<:成 爲同心圓之方式，藉由當湯姆遜式沖壓機（Thomson pressing machine)使疊層物之表背面間貫通，如第3圖（ d )所示般，形成較開口部5c小一圈之開口徑（直徑）6 = 3mm之貫通孔8，同時以圓均勻地包圍半圓狀之第一吸 附電極5a及第二吸附電極5b之外側’而穿孔成直徑294mm 之圓形薄片狀，取得靜電吸盤3。此時’滿足吸附電極之 開口部5c之黏合薄片6之一部分，和沿著第一吸附電極5a 及第二吸附電極5b之外周而圍繞之黏合薄片6之一部分係 形成各介於保持構件2a、2b和吸附電極5之間的電性絕緣 部6a。 然後，如第5圖所示般’使用另外之黏合薄片9’將上 -16 - 201225204 述所取得之靜電吸盤3貼附在基盤1之載置面la，並且在靜 電吸盤3之貫通孔8插入突起保持構件2a而貼在基盤1之載 置面la，使突起保持構件2a從靜電吸盤3之表面突出7/zm ，並且使沿著靜電吸盤3之外周側面，而將外周凸條保持 構件2b貼在基盤1之載置面la，使外周凸條保持構件2b從 靜電吸盤3之表面突出7/zm，而完成與本實施例有關之靜 電吸盤裝置。針對所取得之靜電吸盤裝置，使矽晶圓w依 附保持在由突起保持構件2a和外周凸條保持構件2b所構成 之工件吸附面w’，並且於靜電吸盤3之第一吸附電極5a和 第二吸附電極5b之間施加電位差1 000V之電壓而靜電吸引 矽晶圓w，如此一來矽晶圓w被強固吸附保持，保持構件2a 、2b之高度和靜電吸盤3之表面之高低間距離（第2圖所示 之 h 1 )爲 7 /z m。 【圖式簡單說明】 第1圖爲表示本發明之靜電吸盤裝置的斜視說明圖。 第2圖爲第1圖之靜電吸盤裝置之剖面說明圖。 第3圖爲表示形成靜電吸盤之程序的剖面說明圖。 第4圖爲表示形成靜電吸盤中之吸附電極之樣子的平 面說明圖。 第5圖爲表示保持構件和靜電吸盤被貼在基盤上之樣 子的斜視說明圖。 【主要元件符號說明】 -17- 201225204 1 :基盤 1 a :載置面 2 :保持構件 2a :突起保持構件 2b :外周凸條保持構件 3 :靜電吸盤 4 :聚醯亞胺膜（絕緣薄片構件） 5 :吸附電極（銅箔） 5 a :第一吸附電極 5 b :第二吸附電極 5 c :開口部 6 :黏合薄片 6a :電性絕緣部 7 :聚醢亞胺膜（絕緣薄片構件） 8 :貫通孔 9 :黏合薄片 W :矽晶圓（板狀工件） W ’ ：工件吸附面 -18-201225204 VI. Description of the Invention: [Technical Field to Be Invented] The present invention relates to an electrostatic chuck and a method of manufacturing the same. [Prior Art] An electrostatic chuck device is used under various conditions in an ion implantation process in a semiconductor process or a substrate bonding process in the field of liquid crystal manufacturing. In recent years, as the size of the object adsorbed by the electrostatic chuck device has increased, such as a semiconductor substrate or a glass substrate, it has become an important issue to increase the adsorption force of the electrostatic chuck device or to reduce the particles on the back surface of the substrate. In order to increase the adsorption force of the electrostatic chuck device, in addition to increasing the voltage applied to the adsorption electrode or narrowing the distance between the bipolar adsorption electrodes, the electrostatic chuck placed on the substrate is also considered to be The distance between the plate-shaped workpiece and the adsorption electrode to be adsorbed, such as a semiconductor substrate or a glass substrate, is close to each other. However, since any of these has a relationship with electrical insulation resistance, it is not expected to greatly increase the adsorption force. Therefore, in a vacuum bonding apparatus used for manufacturing a flat panel display such as a liquid crystal display, it is known that an adhesive material and an electrostatic chuck are disposed on a holding plate of a suction holding substrate (plate-shaped workpiece), thereby forming a substrate adsorption surface. (Refer to Patent Documents 1 and 2). However, in this device, although most of the substrate is held by the adhesive material, an electrostatic chuck is disposed at the four corners of the substrate, and the reinforcing substrate is held, but the adhesive material and the electrostatic chuck are in a flat shape on the holding plate. Since the substrate adsorption surface is formed, it is conceivable that the following problems occur. -5- 201225204 That is, the electric force is used by the adsorption force of the electrostatic chuck, and since a large amount of electric charge is generated between the substrate and the substrate, the electric charge is not immediately extinguished even if the power source connected to the adsorption electrode of the electrostatic chuck is cut off. . Therefore, when the substrate is detached from the device while it is being charged, there is a problem that the expensive substrate is damaged. In addition, when the substrate adsorption surface composed of the electrostatic chuck and the substrate adsorption surface composed of the adhesive material are not the same material, the thermal expansion rate or the like is different during the processing of the substrate, so that the substrate back surface cannot be formed flat. In the case of the surface, the adsorption force becomes uneven, and there is a difference in the treatment of the substrate or the cooling effect of the substrate. Further, in consideration of the problem that the particles in the processing atmosphere are attracted by the electrostatic chuck, and the back surface of the substrate is contaminated by the contact, and the substrate mounting device having high thermal conductivity is known, there is a dielectric having an electrode therein. The surface concave portion of the body is provided with an elastic member that can be compressed (see Patent Document 3). However, in this apparatus, by compressing the elastic member while adsorbing the substrate, the back surface of the substrate is brought into contact with the surface of the dielectric body to maintain good thermal conductivity, and the reaction force of the elastic member hinders the adsorption force of the electrostatic chuck. Furthermore, it is also difficult to flatten the adsorption surface to adsorb the entire substrate. [Prior Art Document] [Patent Document 1] [Patent Document 1] JP-A-2005-35 1 96 1 (paragraph 0021, paragraph 0025, 2) [Patent Document 2] Japanese Patent No. 4 1 1 7 3 3 Japanese Patent Publication No. 4046424 (paragraphs 0010, 0025) [Problems to be Solved by the Invention] The inventors of the present invention have sufficiently addressed the situation based on such a situation. It has insulation resistance and can improve the adsorption force, and can hold and hold the flat surface of the plate-shaped workpiece to be adsorbed, and suppress the charge amount of the plate-shaped workpiece, thereby reducing the load caused when the substrate is removed, and An electrostatic chuck device that removes the possibility of adhesion of particles or the like to the back surface of the plate-like workpiece, and as a result of careful investigation, finds that the holding member formed of a resin material is protruded from the base plate, and the plate-shaped workpiece is adsorbed and held. And electrostatic chuck is disposed on the base plate in a manner lower than the holding member, and electrostatic attraction is performed in a state in which the plate-shaped workpiece is in non-contact state, The present invention has been accomplished by solving the above problems. Therefore, it is an object of the present invention to provide an excellent adsorption force with respect to a plate-like workpiece and to maintain a flat surface on the back surface of the plate-like workpiece, and it is easy to handle after the treatment. A plate suction device that disassembles a plate-like workpiece and can avoid the possibility that the plate-like workpiece is contaminated by the device. Further, another object of the present invention is to provide a method for manufacturing the above-described electrostatic chuck device [Means for Solving the Problem] 201225204 That is, the present invention is characterized in that a holding member made of a resin material is protruded from a base plate, and a plate-like workpiece can be adsorbed and held, and formed in a plate-like workpiece by a holding member. At least a part of the space between the base plate and the base plate is provided with an electrostatic chuck having an adsorption electrode inside, and the electrostatic chuck is electrostatically attracted to the plate-shaped workpiece in a state of being non-contact with the plate-shaped workpiece. Further, the manufacturing method of the electrostatic chuck device of the present invention is characterized in that one of the insulating sheet members is On the surface, an adsorption electrode having a specific opening is formed, and another insulating sheet member is attached to the adsorption electrode side so that at least the opening is filled with an insulating resin, and an electrostatic chuck is produced. After the opening of the electrode penetrates between the front and back surfaces of the electrostatic chuck, a through hole smaller than the opening is formed, and the electrostatic chuck is attached to the substrate, and the holding member made of a resin material is electrostatically charged. The manner in which the suction cup protrudes is such that the holding member protrudes from the base plate corresponding to the through hole, the holding member can adsorb and hold the plate-shaped workpiece, and the electrostatic chuck can be electrostatically attracted in the state of being in contact with the plate-shaped workpiece. The electrostatic chuck device of the present invention has a holding member made of a resin material protruding from a base plate to adsorb and hold a plate-like workpiece. The position, the shape, the number, and the like of the holding member are not particularly limited as long as the workpiece suction surface is formed so as to be capable of adsorbing and holding the plate-like workpiece. Preferably, the holding member of the following form can be exemplified. . That is, even if a plurality of projection holding members are protruded from the base plate, an embossed workpiece suction surface is formed, so that the self-weight of the plate-like workpiece can be adsorbed and held evenly evenly -8-201225204. Further, even if the outer peripheral portion of the plate-like workpiece is held along the outer peripheral rib holding member along the outer peripheral portion of the plate-like workpiece, even if the plurality of ridge retaining members are protruded from the center of the plate-like workpiece toward the outer periphery, The holding member and the ridge holding member may be protruded to form a semiconductor substrate, a glass substrate, a sapphire plate-like workpiece which is representative of the resin material forming the holding member, and it is necessary to form the workpiece absorbing workpiece on one side. From such a viewpoint, it is preferable that the resin member having a holding material of elastic material of 1 MPa or less is formed of a resin material of 2 MPa or more and 3 MPa or less, and the principle of adsorbing the plate-shaped workpiece is not clear, and the inter-sub force is related. Therefore, from the viewpoint of the force with the plate-like workpiece, the top surface of the workpiece is formed by adsorbing the plate-like workpiece, and the average surface roughness is three-dimensional (above 0.55/zM or less, preferably 0.4 μm or more). . . . Specific examples of the resin material include olefin-butadiene rubber, chlorosulfonated polyethylene rubber, propylene vinyl rubber, ethylene propylene rubber, chloroprene rubber, butadiene isobutylene-isoprene The olefin rubber and the urethane rubber have the above-mentioned elastic modulus or surface shape of the epoxy resin for the base plate on which the holding member is protruded, so that the flat surface having a flatness of 20^111 is provided for the configuration to be maintained. The member is provided with an electrostatic suction method, and the protruding portion is not curled. The diameter of the portion is increased sequentially, and even the adsorption surface of the assembly can be adsorbed. The plate substitution is 0.5 MPa or more, and it is more preferable that the elastic modulus is a member. Another one is presumed to be that the retention of the molecular component adsorption surface is easily found to be 0.01 // m 5 // m or less. Styrene-butyl Alkenyl - styrene-butadiene rubber, fluorine rubber, plastic and the like, which has suitable. It is better to have a holding member. In detail, the plate has a flatness of -20-201225204 and a flatness of 20#m or less, and the most ideal flatness is l〇//m or less. At least, if the holding surface is held in such a flat surface, the flat surface of the top surface reaction substrate of the holding member can be adsorbed and held by the held workpiece suction surface facing the plate-like workpiece. Furthermore, the electrostatic chuck device of the present invention is configured such that at least one of the space between the plate-like workpiece and the base plate is disposed on the substrate, and the electrostatic chuck is disposed on the substrate, and is preferably disposed in the space. An electrostatic chuck is placed on the base plate. Among them, the electrostatic chuck is set to have a lower height than the holding member, and the electrostatic chuck and the plate-like workpiece are in a non-state, and the plate-shaped workpiece is electrostatically attracted. The electrostatic chuck is internally provided with an electrode, and is not adsorbed on the front and back sides of the electrostatic chuck, and it is preferable that the electrical insulating portion is disposed between the upper member of the substrate and the adsorption electrode to be surely retained. When the electric potential of the electrode is set to be lower than that of the holding member, it is preferable to appropriately set the state in which the electrostatic chuck and the plate-like workpiece are not in contact with each other, and the elastic modulus of the resin material is maintained. The height of the holding member in the state of the plate-like workpiece and the distance between the height and the bottom of the electrostatic chuck must also be considered in order to prevent the action of the plate-like workpiece from being attracted by the electric force of the Coulomb force such as electrostatic attraction. The plate-like workpiece side is provided with 1/5 or less of the upper dielectric layer, and the lower limit 値 is preferably 5 // m. More preferably, the electrostatic chuck workpiece side has 1/6 or less of the thickness of the upper dielectric layer, and the lower limit 値It is better. In the flat surface member, the flatness retaining structure portion, the entire surface of which is in contact with the suction electrode exposed to maintain the insulating plate shape, the test is taken for the suction surface plate, and the thickness of the plate is 7 ym -10 in the shape of the plate. - 201225204 In order to manufacture the electrostatic chuck device of the present invention, the following method can be preferably exemplified. First, a conductive paint is applied or printed on one surface of an insulating sheet member made of a resin, ceramic or the like to form an adsorption electrode having a specific opening. In addition, an electrode surface is formed by vapor deposition or sputtering of gold, and a metal foil such as a copper foil is press-bonded using an adhesive sheet or the like to form an electrode surface, and is formed by etching using a mask. Adsorption electrode in the opening. Alternatively, an insulating sheet member having a metal foil is formed by a metal foil to form an adsorption electrode having a specific opening portion by etching using a mask. Then, at least the opening portion is filled with an insulating resin such as a silicone resin or an epoxy resin, and another insulating sheet member is attached to the adsorption electrode side, thereby producing an upper dielectric layer, an adsorption electrode, and a lower portion. Electrostatic chuck of the dielectric layer. Here, in the case of the insulating adhesive resin, even if a liquid adhesive is applied, even if a resin-made adhesive sheet or the like is interposed, a part of the resin is filled into the opening by press-pressing. can. Then, when the through hole of the opening of the electrostatic chuck is penetrated through the opening of the adsorption electrode, when the through hole is formed one hole smaller than the opening, the electrically insulating portion made of the insulating adhesive resin is adsorbed. Between the opening of the electrode and the through hole. Further, any one of the opening of the adsorption electrode and the through hole formed in the electrostatic chuck may be appropriately designed in accordance with the number or shape of the holding member which is provided on the substrate. Then, the electrostatic chuck is attached to the substrate through an adhesive or a bonding sheet, and the holding member made of a resin material is inserted into the holding member in the through hole so as to protrude from the electrostatic chuck, and is protruded from the substrate -11. - 201225204, whereby the electrostatic chuck device of the present invention can be obtained. Then, by connecting the power source to the adsorption electrode of the electrostatic chuck, the plate-like workpiece can be electrostatically attracted to the plate-like workpiece in a non-contact state by the electric force of the electrostatic chuck, and the holding member can be sucked and held by the plate-like workpiece. In order to obtain the electrostatic chuck device of the present invention, of course, in addition to the above-described methods, for example, a specific holding member may be protruded from the base plate in advance, and an insulating material or printing may be applied to the concave portion formed between the holding members. Forming a lower dielectric layer, using a conductive material thereon to form a specific adsorption electrode, and coating or printing an insulating material from above to form an upper dielectric layer, so that the upper dielectric layer is lower than the holding member on the substrate A method of forming an electrostatic chuck. The electrostatic chuck has an upper dielectric layer on the plate-like workpiece side and a lower dielectric layer on the substrate side. Although the two may be formed of the same material, even if different materials are used, at least the upper layer may be used. The electric layer is preferably composed of a resin film such as a polyimide film, a PET film or a liquid crystal polymer film in view of low dust generation property or dielectric constant. More preferably, both the upper dielectric layer and the lower dielectric layer are preferably formed of the resin films. Further, the thickness of the upper dielectric layer and the lower dielectric layer is preferably 25 Mm or more and 120 em or less, more preferably 25 // m or more and 50 μm or less. When any of these thicknesses is within the above range, electrical insulation with respect to the adsorption electrode can be ensured, and the electric force can be efficiently found on the upper dielectric layer side with respect to the plate-like workpiece. Further, the thick portion of the electrically insulating portion between the opening portion of the adsorption electrode and the through hole is preferably 1 mm or more in order to secure electrical insulation, and is preferably 12-201225204 2 mm or more and 3 mm. The following is better. Although the insulation is more easily ensured only by the portion where the thickness of the electrical insulating portion is increased, when the thickness of the electrical insulating portion exceeds 5 mm, the effect is almost saturated, or the area of the adsorption electrode is reduced, which is not preferable. Further, the so-called bipolar type may be used for the adsorption electrode even if a voltage is applied between the plate-like workpiece, a so-called unipolar type, or a potential difference between the electrodes. In the case of the bipolar type adsorption electrode, even if the electrodes are arranged in the same plane, the electrodes may be arranged up and down even with the inter-electrode insulating layer interposed therebetween. The choice of the unipolar type or the bipolar type can be appropriately selected depending on the type of the plate-shaped workpiece or the condition in which the plate-shaped workpiece is processed. Further, the shape of the adsorption electrode can be appropriately selected in accordance with, for example, a flat shape, a semicircular shape, a comb shape or a mesh pattern shape, and the like, the type or size of the plate-shaped workpiece. Further, the thickness of the adsorption electrode is not particularly limited, but in consideration of design, etc., it is preferable to use 〇 · 1 iz m or more and 3 0 // m or less. The material of the base plate is not particularly limited, and examples thereof include aluminum or aluminum alloy, quartz glass, ceramic, polyimide, and stainless steel. Further, it is preferable to apply a planarization treatment to the surface of the substrate in such a manner as to have a specific flatness by mechanical processing or engraving before the electrostatic chuck or the holding member is provided. Further, even if it is set to have irregularities on the surface of the base plate, the height relationship between the electrostatic chuck and the holding member can be adjusted, but in this case, the holding member or the electrostatic chuck is flattened so as to have a specific flatness individually. Processing is better. Further, in the case of the electrostatic chuck device of the known type, the base plate is provided with a -13 - 201225204 flow path for circulating a cooling medium, and it is a matter of course that the back side of the plate-shaped workpiece is pushed up and pushed up. [Effects of the Invention] According to the electrostatic chuck device of the present invention, the holding member formed of a resin material protruding from the base plate can adsorb and hold the plate-like workpiece, and in a state in which the plate-like workpiece is non-contacted, Since the electrostatic chuck electrostatically attracts the plate-like workpiece, the electrostatic attraction of the electrostatic chuck device can be improved while sufficiently ensuring electrical insulation. Further, since the back surface of the plate-like workpiece is maintained and held by the flat surface, the cooling effect of the plate-shaped workpiece or the treatment of the plate-like workpiece can be uniformly performed. Moreover, since the electrostatic chuck is not present on the lower side of the holding member with respect to the thickness direction of the electrostatic chuck device, and the plate-shaped workpiece and the electrostatic chuck are adsorbed and held in a non-contact state, the plate-like workpiece after the power supply is cut off can be suppressed. The amount of electric charge is reduced, and the load at the time of removing the plate-like workpiece is reduced, and the possibility of attaching to the back surface of the plate-like workpiece as an example is arbitrarily excluded. [Embodiment] Hereinafter, the present invention will be described more specifically with reference to the drawings of the attached drawings. [Embodiment] Figs. 1 and 2 show an electrostatic chuck device according to an embodiment of the present invention. Fig. 1 is a squint explanatory view, and Fig. 2 is a cross-sectional explanatory view (partial part) showing a cross section taken along the line A-A in Fig. 1. The electrostatic chuck device has a holding member 2 made of a resin material protruding from a base plate-14-201225204, and can hold and hold a wafer (plate-like workpiece) W of 12 inches, and is formed via the holding member 2. In the space between the wafer w and the substrate 1, the electrostatic chuck 3 having the adsorption electrode inside is disposed lower than the holding member 2, and the electrostatic chuck 3 and the wafer w are in a non-contact state, and the electrostatic chuck 3 can electrostatically attract the wafer w. The base plate 1 is made of an aluminum alloy having a diameter of 29411111 and a height of 17.5111111. The mounting surface la of the holding member 2 and the electrostatic chuck 3 is flattened to a flatness of 15 μm by honing. Further, inside the base 1, a refrigerant flow path (not shown) through which a cooling gas or the like flows is formed. The holding member 2 disposed on the mounting surface 1a of the base 1 is composed of a total of 106 projection holding members 2a which are provided in an embossed shape and protruded so as to be provided along the outer peripheral ridges of the outer periphery of the crucible wafer w. The holding member 2b is constructed such that the height of each of the holding members 2b is 140 " m, the diameter of the top surface of the cylindrical projection holding member 2a is 2 mm, and the width of the top surface of the outer peripheral ridge holding member 2b is 2 mm. These holding members 2 are formed by using a silicone resin having an elastic modulus of 2.7 MPa (manufactured by Fuso Rubber Industry Co., Ltd., product name: Sirius), and the holding member 2 (the protrusion holding member 2a and the workpiece suction surface) is formed by adsorbing the silicon wafer w. The top surface of the outer peripheral ridge holding member 2b) has a three-dimensional average surface roughness (SRa) of 0.46 ym. Further, in the accessory drawing, a part of the projection holding member 2a, a portion of the opening portion 5c of the adsorption electrode to be described later, and the through hole 8 of the electrostatic chuck are omitted in accordance with the condition of the paper surface. Further, the electrostatic chuck 3 is formed as follows. First, as shown in Fig. 3(a), on one side of the polyimide film (insulating sheet member) 4 having a thickness of 5 〇em and becoming an upper dielectric layer, by screen Printing and coating the conductive ink, as shown in Fig. 4, forming a semi-circular first adsorption electrode 5a and a second adsorption electrode 5b (both diameters are 288 mm, thickness is 5 μm), and as shown in Fig. 3 In the case of b), the opening 5c having an opening diameter (diameter) ch = 5 mm is formed corresponding to the position and shape of the projection holding member 2a disposed on the base 1, and the bipolar adsorption electrode 5 is formed. Further, the obtained first adsorption electrode 5a and second adsorption electrode 5b are connected to a DC power supply (outside the drawing) so as to be connected to a connection terminal other than the one shown. Next, as shown in Fig. 3(c), the adhesive sheet 6 made of epoxy resin having a thickness of 15/m is formed on the side of the adsorption electrode 5 by a thickness of 50 μm to form a polyimide layer of the lower dielectric layer ( The insulating sheet member 7 is press-worked, and a portion of the sheet 6 is bonded to the opening 5c of the adsorption electrode 5 to obtain a laminate. Next, the opening and the bottom of the adsorption electrode 5 <: are concentric circles, and the Thomson pressing machine is used to penetrate the front and back surfaces of the laminate, as shown in Fig. 3(d) In general, a through hole 8 having an opening diameter (diameter) of 6 = 3 mm smaller than the opening portion 5c is formed, and the outer side of the semi-circular first adsorption electrode 5a and the second adsorption electrode 5b is uniformly surrounded by a circle and is perforated. A circular sheet having a diameter of 294 mm is used to obtain an electrostatic chuck 3. At this time, a portion of the bonding sheet 6 that satisfies the opening portion 5c of the adsorption electrode, and a portion of the bonding sheet 6 that surrounds the outer periphery of the first adsorption electrode 5a and the second adsorption electrode 5b are formed between the holding members 2a, An electrically insulating portion 6a between the 2b and the adsorption electrode 5. Then, as shown in Fig. 5, the electrostatic chuck 3 obtained by the above-mentioned 16 - 201225204 is attached to the mounting surface 1a of the base 1 and the through hole 8 of the electrostatic chuck 3 is used as shown in Fig. 5 The projection holding member 2a is inserted and attached to the mounting surface 1a of the base 1, so that the projection holding member 2a protrudes 7/zm from the surface of the electrostatic chuck 3, and the peripheral rib holding member is placed along the outer circumferential side of the electrostatic chuck 3. 2b is attached to the mounting surface 1a of the base 1, and the outer peripheral ridge holding member 2b is protruded 7/zm from the surface of the electrostatic chuck 3 to complete the electrostatic chuck device according to the present embodiment. With respect to the obtained electrostatic chuck device, the tantalum wafer w is attached and held to the workpiece adsorption surface w' constituted by the protrusion holding member 2a and the outer peripheral ridge holding member 2b, and the first adsorption electrode 5a and the first electrode of the electrostatic chuck 3 A voltage of a potential difference of 1 000 V is applied between the two adsorption electrodes 5b to electrostatically attract the wafer w, so that the wafer w is strongly adsorbed and held, and the height of the holding members 2a, 2b and the surface of the electrostatic chuck 3 are at a high distance ( The h 1 ) shown in Fig. 2 is 7 /zm. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the electrostatic chuck device of the present invention. Fig. 2 is a cross-sectional explanatory view of the electrostatic chuck device of Fig. 1. Fig. 3 is a cross-sectional explanatory view showing a procedure for forming an electrostatic chuck. Fig. 4 is a plan explanatory view showing a state in which an adsorption electrode in an electrostatic chuck is formed. Fig. 5 is a perspective view showing a state in which the holding member and the electrostatic chuck are attached to the base. [Description of main component symbols] -17- 201225204 1 : Base plate 1 a : Mounting surface 2 : Holding member 2 a : Projection holding member 2 b : Peripheral rib holding member 3 : Electrostatic chuck 4 : Polyimide film (insulating sheet member) 5 : adsorption electrode (copper foil) 5 a : first adsorption electrode 5 b : second adsorption electrode 5 c : opening portion 6 : adhesive sheet 6 a : electrical insulating portion 7 : polyimide film (insulating sheet member) 8 : Through hole 9 : Bonded sheet W : 矽 wafer (plate-shaped workpiece) W ' : workpiece adsorption surface -18-