JP2000100917A - Electrostatic chuck - Google Patents

Electrostatic chuck

Info

Publication number
JP2000100917A
JP2000100917A JP10267582A JP26758298A JP2000100917A JP 2000100917 A JP2000100917 A JP 2000100917A JP 10267582 A JP10267582 A JP 10267582A JP 26758298 A JP26758298 A JP 26758298A JP 2000100917 A JP2000100917 A JP 2000100917A
Authority
JP
Japan
Prior art keywords
electrostatic chuck
sample
chuck plate
posts
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10267582A
Other languages
Japanese (ja)
Inventor
Noriyuki Kamata
範幸 鎌田
Hirofumi Miyao
裕文 宮尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP10267582A priority Critical patent/JP2000100917A/en
Publication of JP2000100917A publication Critical patent/JP2000100917A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To prevent particles such as dusts, etc., deposited to an electrostatic chuck plate from moving to a sample by providing posts piercing the electrostatic chuck plate to form a small clearance to avoid direct contact between the electrostatic chuck plate and the sample. SOLUTION: Eight polyimide-made dielectric posts 4 are provided at equal spacings on the same circle of an electrostatic chuck 2 and a plurality of holes 5 piercing the posts 4 are provided, corresponding to the number and positions of the posts 4, thereby forming a clearance 6 of several tens μm between a wafer sample 1 and electrostatic chuck plate 2, the wafer sample 1 being put over the posts 4 on a sample stage. When a specified voltage is applied to the electrostatic chuck plate 2, the wafer sample 1 receives an electrostatic chucking force while owing to the posts 4 protruding several tens μm from the electrostatic chuck plate 2 surface, the wafer sample 1 never directly contacts the electrostatic chuck plate 2.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】 本発明は、ウェハ等の平板
試料を静電吸着する静電チャック装置に関する。特に、
半導体ウェハ検査用走査電子顕微鏡等に好適な静電チャ
ック装置に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to an electrostatic chuck device for electrostatically holding a flat sample such as a wafer. In particular,
The present invention relates to an electrostatic chuck device suitable for a scanning electron microscope for semiconductor wafer inspection and the like.

【0002】[0002]

【従来の技術】従来より、静電チャックは、半導体ウェ
ハ検査用走査電子顕微鏡等にウェハ試料を試料ステージ
に保持する手段として広く用いられている。図1に静電
チャック、図2に静電チャック装置を搭載した走査電子
顕微鏡の基本的な一例をそれぞれ示す。図1の(a)は
平面図、(b)は断面図である。1はウェハ試料、2は
静電チャックプレート、3は保持台である。なお、図示
しないが、静電チャックプレート2には静電吸着力を与
えるための電圧を印加するための制御電源が接続されて
いる。図2中、10は高真空に保たれた電子顕微鏡の鏡
筒、11は電子ビームを発生させる電子銃、12および
13は電子ビームを集束して細く絞るための集束レンズ
と対物レンズ、14は電子ビームを2次元的に走査する
走査コイル、15はこれも高真空に保たれた試料室、1
6はこの試料室内に設置された試料ステージであって、
自在にX、Y動、傾斜動などができ、試料上の所望の位
置の顕微鏡観察ができる。試料ステージ16は、その上
面を前記保持台3とし、静電チャックプレート2を取り
付け、ウェハ試料1を載置する。試料1は、図示しない
エアロック室等を経て、試料室外から試料室内に装填さ
れ、試料ステージ16の静電チャックプレート2の上に
載置される。17は電子ビームの照射によって試料から
発生した二次電子を検出する検出器である。更に、図示
しないが、電子銃11、各レンズ12、13、走査コイ
ル14、試料ステージ16等にはこれらを制御する電気
回路が接続され、検出器17からの信号を増幅等する電
気回路、走査電子顕微鏡像を表示するためのCRT等が
接続されている。この様な装置においては、操作に伴い
ゴミ等の微粒子がウェハ試料表面に付着することは極力
避けなければならない。しかし、静電チャックとウェハ
試料とが接触することによって、静電チャックに付着し
たゴミ等の微粒子が被吸着物であるウェハに移ってしま
う問題があった。このため、これを防ぐための様々な工
夫がなされていた。例えば、特開昭63−95644号
公報では、静電チャックの絶縁膜上に凹部と凸部より成
る段差を設けてダスト付着の悪影響の改善を図ってい
る。また、特開平5−6933号公報では、吸着面に凹
部を形成して被吸着物との接触部の面積比を10〜30
%として、ゴミを付着させ難くしている。
2. Description of the Related Art Conventionally, an electrostatic chuck has been widely used as a means for holding a wafer sample on a sample stage in a scanning electron microscope for semiconductor wafer inspection or the like. FIG. 1 shows a basic example of an electrostatic chuck, and FIG. 2 shows a basic example of a scanning electron microscope equipped with an electrostatic chuck device. 1A is a plan view, and FIG. 1B is a cross-sectional view. 1 is a wafer sample, 2 is an electrostatic chuck plate, and 3 is a holding table. Although not shown, the electrostatic chuck plate 2 is connected to a control power supply for applying a voltage for giving an electrostatic attraction force. In FIG. 2, 10 is a column of an electron microscope kept in a high vacuum, 11 is an electron gun for generating an electron beam, 12 and 13 are a focusing lens and an objective lens for focusing and narrowing the electron beam, and 14 is A scanning coil 15 for scanning the electron beam two-dimensionally, 15 is a sample chamber also maintained in a high vacuum, 1
Reference numeral 6 denotes a sample stage installed in the sample chamber,
X, Y movement, tilt movement, etc. can be performed freely, and a desired position on the sample can be observed with a microscope. The sample stage 16 has the upper surface thereof as the holding table 3, the electrostatic chuck plate 2 is attached, and the wafer sample 1 is placed thereon. The sample 1 is loaded from outside the sample chamber into the sample chamber via an airlock chamber (not shown) and mounted on the electrostatic chuck plate 2 of the sample stage 16. Reference numeral 17 denotes a detector for detecting secondary electrons generated from the sample by the irradiation of the electron beam. Further, although not shown, an electric circuit for controlling these elements is connected to the electron gun 11, the lenses 12, 13, the scanning coil 14, the sample stage 16, and the like, and an electric circuit for amplifying a signal from the detector 17 and the like. A CRT or the like for displaying an electron microscope image is connected. In such an apparatus, it is necessary to minimize the attachment of fine particles such as dust to the wafer sample surface during operation. However, there has been a problem that, when the electrostatic chuck and the wafer sample come into contact with each other, fine particles such as dust adhered to the electrostatic chuck are transferred to the wafer to be adsorbed. For this reason, various measures have been taken to prevent this. For example, in Japanese Patent Application Laid-Open No. 63-95644, a step having a concave portion and a convex portion is provided on an insulating film of an electrostatic chuck to improve the adverse effect of dust adhesion. Further, in Japanese Patent Application Laid-Open No. Hei 5-6933, a concave portion is formed on an adsorption surface to make an area ratio of a contact portion with an adsorption object 10 to 30.
% Makes it difficult to attach garbage.

【0003】[0003]

【発明が解決しようとする課題】しかし、上記のように
吸着面に凹凸等の加工を施すだけでは、まだ十分にゴミ
の付着を防止できず満足できるものではなかった。
However, as described above, simply applying irregularities or the like to the suction surface has not been able to sufficiently prevent adhesion of dust, and has not been satisfactory.

【0004】本発明は、上述した問題点を解決すべくな
されたものであり、ゴミの付着をより一層防止する静電
チャック装置を提起することを目的としている。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and has as its object to provide an electrostatic chuck device that further prevents dust from adhering.

【0005】[0005]

【課題を解決するための手段】この目的を達成するため
本発明は、ウェハ等の試料を装着する試料ステージの静
電チャック装置において、複数の貫通孔を有する静電チ
ャックプレートと、前記貫通孔を貫通する複数のポスト
とを前記試料ステージに取り付け、前記ポストは前記静
電チャックプレートの表面より僅かに突出するようにす
ることによって、ウェハ等の試料が静電チャックプレー
トと直接触れることのないようにしたことを特徴とす
る。
According to the present invention, there is provided an electrostatic chuck apparatus for a sample stage on which a sample such as a wafer is mounted, comprising: an electrostatic chuck plate having a plurality of through holes; By mounting a plurality of posts penetrating through the sample stage on the sample stage and projecting the posts slightly from the surface of the electrostatic chuck plate, a sample such as a wafer does not directly touch the electrostatic chuck plate. It is characterized by doing so.

【0006】[0006]

【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を詳細に説明する。
Embodiments of the present invention will be described below in detail with reference to the drawings.

【0007】図3は、本発明の静電チャック装置の実施
形態の一例を示しており、(a)は平面図、(b)は断
面図である。この図3で図2の従来装置と同一番号は同
一構成要素を示す。図中、4はポストであって、例え
ば、ポリイミド製の誘電体物質から成り、同一円周上に
等間隔で8個所設けられる。5はポスト4を貫通させる
ための静電チャックプレート2に開けられた孔であっ
て、少なくとも前記ポストの数と位置とに合わせて複数
設けられる。6はポスト4を設けることによって、ウェ
ハ試料1と静電チャックプレート2の間にできる空隙で
あって、100μm以下の数十μmである。
FIGS. 3A and 3B show an embodiment of the electrostatic chuck device according to the present invention, wherein FIG. 3A is a plan view and FIG. 3B is a sectional view. In FIG. 3, the same reference numerals as those of the conventional device of FIG. 2 indicate the same components. In the drawing, reference numeral 4 denotes posts, which are made of, for example, a dielectric material made of polyimide, and are provided at eight locations on the same circumference at equal intervals. Reference numeral 5 denotes a plurality of holes formed in the electrostatic chuck plate 2 for penetrating the posts 4, and a plurality of holes 5 are provided in accordance with at least the number and positions of the posts. Numeral 6 denotes a gap formed between the wafer sample 1 and the electrostatic chuck plate 2 by providing the post 4, which is several tens μm of 100 μm or less.

【0008】このような構成の動作について次に説明す
る。ウェハ試料1は、図示しないエアロック室等を経
て、試料室外から試料室内に装填され、試料ステージ1
6上の複数のポスト4の上に置かれる。続いて、これも
図示しない静電チャック用制御電源から所定の電圧を静
電チャックプレート2に印加すると、ウェハ試料1は、
静電チャックプレート2からの静電吸着力を受ける。こ
のとき、ポスト4は、静電チャックプレート2の表面よ
りも僅かに(数十μm)突出しており、ウェハ試料1と
静電チャックプレート2は直接触れることはない。しか
も、ポスト4は静電チャックプレート2に直接には接触
しない様に貫通孔5を貫通して直接試料ステージ16に
取り付けられている。従来の、静電チャックプレートの
絶縁膜上に凹部と凸部の段差を設ける方法や吸着面に凹
部を形成して接触面積を少なくする方式では、静電チャ
ックプレートの吸着部の一部が直接試料と接触してお
り、この部分での微粒子の付着は避けられなかったが、
本発明の方式では、試料は吸着力のないポストとの接触
であり、本質的にそのようなことは起こり難い。一方、
従来の方式は、吸着力の低下を極力少なくすることも重
要な課題であったが、これに対して、本発明の方式で
は、ポスト自身は吸着力を持たず、しかも静電チャック
プレートと試料との間は真空の空隙があり、吸着力の低
下はある。しかし、幸いなことに近年の静電チャック装
置の性能の向上は著しく、本発明の方式でも実験によれ
ば十分な吸着力が得られることが分かった。
Next, the operation of such a configuration will be described. The wafer sample 1 is loaded into the sample chamber from outside the sample chamber via an air lock chamber (not shown) and the like.
6 on a plurality of posts 4. Subsequently, when a predetermined voltage is applied to the electrostatic chuck plate 2 from a control power supply for electrostatic chuck (not shown), the wafer sample 1
It receives an electrostatic attraction force from the electrostatic chuck plate 2. At this time, the post 4 protrudes slightly (several tens of μm) from the surface of the electrostatic chuck plate 2, and the wafer sample 1 and the electrostatic chuck plate 2 do not directly touch. Moreover, the post 4 is directly attached to the sample stage 16 through the through hole 5 so as not to directly contact the electrostatic chuck plate 2. In the conventional method of providing a step between a concave portion and a convex portion on the insulating film of the electrostatic chuck plate or a method of forming a concave portion on the suction surface to reduce the contact area, a part of the suction portion of the electrostatic chuck plate is directly Although it was in contact with the sample, adhesion of fine particles at this part was unavoidable,
In the system of the present invention, the sample is in contact with a non-adsorbing post, and such is essentially unlikely. on the other hand,
In the conventional method, it was also important to minimize the decrease in the suction force. On the other hand, in the method of the present invention, the post itself did not have the suction force, and the electrostatic chuck plate and the sample were not attached. There is a vacuum gap between them and there is a decrease in the attraction force. Fortunately, however, the performance of the electrostatic chuck device has been greatly improved in recent years, and experiments have shown that a sufficient suction force can be obtained even with the method of the present invention.

【0009】以上本発明の実施の形態を説明したが、本
発明は上記形態に限定されるものではない。例えば、ポ
ストの材質は、フッ素樹脂でもよく、その他ウェハ試料
を汚染し難い材料であればよい。また、ポストは同一円
周上に等間隔で8個所としたが、個数は3以上であれば
よく、勿論その位置も適宜定めればよい。要は、試料に
反りが発生することなく、パランスよく保持できるよう
な配置であればよい。
Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. For example, the material of the post may be fluororesin, or any other material that does not easily contaminate the wafer sample. In addition, eight posts are provided at equal intervals on the same circumference, but the number may be three or more, and of course, the position may be appropriately determined. In short, any arrangement may be used as long as the sample can be held well without warping.

【0010】[0010]

【発明の効果】以上説明したように、本発明において
は、静電チャックプレートを貫通するポストを設けて、
僅かな空隙を作り、静電チャックプレートと試料とは直
接接触しないようにした。また、前記ポストは、ポリイ
ミドあるいはフッ素樹脂製とした。その結果、静電チャ
ックプレートに付着しているゴミ等の微粒子が試料に移
ることを防ぐことができる。
As described above, in the present invention, the post penetrating the electrostatic chuck plate is provided,
A slight gap was created to prevent direct contact between the electrostatic chuck plate and the sample. The posts were made of polyimide or fluororesin. As a result, it is possible to prevent fine particles such as dust adhering to the electrostatic chuck plate from being transferred to the sample.

【図面の簡単な説明】[Brief description of the drawings]

【図1】従来の静電チャック装置の一例を示す平面図と
断面図である。
FIG. 1 is a plan view and a sectional view showing an example of a conventional electrostatic chuck device.

【図2】静電チャック装置を搭載した走査電子顕微鏡の
基本的な一例を示す図である。
FIG. 2 is a diagram showing a basic example of a scanning electron microscope equipped with an electrostatic chuck device.

【図3】本発明にかかる静電チャック装置の実施形態の
一例を示す平面図と断面図である。
FIG. 3 is a plan view and a cross-sectional view illustrating an example of an embodiment of the electrostatic chuck device according to the present invention.

【符号の説明】[Explanation of symbols]

1…ウェハ試料、2…静電チャックプレート、3…保持
台、4…ポスト、5…貫通孔、6…空隙、10…電子顕
微鏡鏡筒、11…電子銃、12…集束レンズ、13…対
物レンズ、14…走査コイル、15…試料室、16…試
料ステージ、17…検出器
DESCRIPTION OF SYMBOLS 1 ... Wafer sample, 2 ... Electrostatic chuck plate, 3 ... Holder, 4 ... Post, 5 ... Through hole, 6 ... Void, 10 ... Electron microscope column, 11 ... Electron gun, 12 ... Focusing lens, 13 ... Objective Lens 14 Scan coil 15 Sample chamber 16 Sample stage 17 Detector

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 ウェハ等の平板試料を装着する試料ステ
ージ用の静電チャック装置において、複数の貫通孔を有
する静電チャックプレートと、前記貫通孔を貫通する複
数のポストとを前記試料ステージに取り付け、前記ポス
トは前記静電チャックプレートの表面より僅かに突出す
るようにすることによって、静電チャックプレートと前
記平板試料との間に空隙を生じせしめ、前記平板試料の
装着面が前記静電チャックプレートの表面と直接触れる
ことのないように成したことを特徴とする静電チャック
装置。
1. An electrostatic chuck device for a sample stage for mounting a flat sample such as a wafer, wherein an electrostatic chuck plate having a plurality of through holes and a plurality of posts penetrating through the through holes are provided on the sample stage. Attachment, the post is made to slightly protrude from the surface of the electrostatic chuck plate to create a gap between the electrostatic chuck plate and the plate sample, and the mounting surface of the plate sample is An electrostatic chuck device characterized in that it does not directly touch the surface of the chuck plate.
【請求項2】 前記ポストの材質は、ポリイミドあるい
はフッ素樹脂であることを特徴とする請求項1記載の静
電チャック装置。
2. The electrostatic chuck device according to claim 1, wherein a material of the post is polyimide or fluororesin.
【請求項3】 前記空隙は、100μm以下であること
を特徴とする請求項1および2記載の静電チャック装
置。
3. The electrostatic chuck device according to claim 1, wherein the gap is 100 μm or less.
JP10267582A 1998-09-22 1998-09-22 Electrostatic chuck Pending JP2000100917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10267582A JP2000100917A (en) 1998-09-22 1998-09-22 Electrostatic chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10267582A JP2000100917A (en) 1998-09-22 1998-09-22 Electrostatic chuck

Publications (1)

Publication Number Publication Date
JP2000100917A true JP2000100917A (en) 2000-04-07

Family

ID=17446782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10267582A Pending JP2000100917A (en) 1998-09-22 1998-09-22 Electrostatic chuck

Country Status (1)

Country Link
JP (1) JP2000100917A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012026421A1 (en) * 2010-08-24 2012-03-01 株式会社クリエイティブ テクノロジー Electrostatic chuck apparatus and method for manufacturing same
EP2430654A2 (en) * 2009-05-15 2012-03-21 Entegris, Inc. Electrostatic chuck with polymer protrusions
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US9025305B2 (en) 2010-05-28 2015-05-05 Entegris, Inc. High surface resistivity electrostatic chuck
US9543187B2 (en) 2008-05-19 2017-01-10 Entegris, Inc. Electrostatic chuck

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543187B2 (en) 2008-05-19 2017-01-10 Entegris, Inc. Electrostatic chuck
US10395963B2 (en) 2008-05-19 2019-08-27 Entegris, Inc. Electrostatic chuck
EP2430654A2 (en) * 2009-05-15 2012-03-21 Entegris, Inc. Electrostatic chuck with polymer protrusions
EP2430654A4 (en) * 2009-05-15 2013-12-04 Entegris Inc Electrostatic chuck with polymer protrusions
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US8879233B2 (en) 2009-05-15 2014-11-04 Entegris, Inc. Electrostatic chuck with polymer protrusions
US9721821B2 (en) 2009-05-15 2017-08-01 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US9025305B2 (en) 2010-05-28 2015-05-05 Entegris, Inc. High surface resistivity electrostatic chuck
WO2012026421A1 (en) * 2010-08-24 2012-03-01 株式会社クリエイティブ テクノロジー Electrostatic chuck apparatus and method for manufacturing same

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