TW201216367A - High-temperature activation process - Google Patents
High-temperature activation process Download PDFInfo
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- TW201216367A TW201216367A TW100123172A TW100123172A TW201216367A TW 201216367 A TW201216367 A TW 201216367A TW 100123172 A TW100123172 A TW 100123172A TW 100123172 A TW100123172 A TW 100123172A TW 201216367 A TW201216367 A TW 201216367A
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- glass substrates
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- 238000001994 activation Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 169
- 239000011521 glass Substances 0.000 claims abstract description 108
- 238000000034 method Methods 0.000 claims abstract description 69
- 238000012545 processing Methods 0.000 claims abstract description 29
- 238000000137 annealing Methods 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 37
- 238000000227 grinding Methods 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 230000004931 aggregating effect Effects 0.000 claims description 6
- 238000011068 loading method Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000009966 trimming Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000000576 coating method Methods 0.000 description 35
- 239000011248 coating agent Substances 0.000 description 28
- 230000008569 process Effects 0.000 description 23
- 239000010410 layer Substances 0.000 description 21
- 239000011888 foil Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000001146 hypoxic effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/08—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
- B24B9/10—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass
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- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
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- B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
- B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
- B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
- B65G49/068—Stacking or destacking devices; Means for preventing damage to stacked sheets, e.g. spaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
- B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
- B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
- B65G49/068—Stacking or destacking devices; Means for preventing damage to stacked sheets, e.g. spaces
- B65G49/069—Means for avoiding damage to stacked plate glass, e.g. by interposing paper or powder spacers in the stack
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
- C03B25/02—Annealing glass products in a discontinuous way
- C03B25/025—Glass sheets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
- C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
- C03B29/025—Glass sheets
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B35/00—Transporting of glass products during their manufacture, e.g. hot glass lenses, prisms
- C03B35/14—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands
- C03B35/16—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands by roller conveyors
- C03B35/18—Construction of the conveyor rollers ; Materials, coatings or coverings thereof
- C03B35/181—Materials, coatings, loose coverings or sleeves thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
Description
201216367 六、發明說明: 【發明所屬之技術領域】 本發明係關於光伏打模組及生產方法。 【先前技術】 光伏打模組可包含形成於一基板相鄰處之一或多個塗 k 層。處理多個經塗佈基板之現行方法效率低下。 【發明内容】 光伏打模組可包含建立於一基板(或上基板)相鄰處之多 個塗層。該基板可包含任何適合基板材料,其包含(例如) 玻璃。例如,一光伏打模組可包含呈一堆疊體形成於一坡 璃基板上之一障壁層、一透明導電氧化物(TCO)層、一緩 衝層、一半導體窗層及一半導體吸收體層。以高容量完全 自動化模式處理基板之一方法可包含一高溫活化方法。例 如’ 一或多個玻璃基板可被載入至一邊緣處理腔室中。該 等玻璃基板可包含一或多個塗層。為經久耐用,可使用— 邊緣修整方法(例如邊緣研磨)來處理該等玻璃基板之邊 緣。接著,該等玻璃基板可被沖洗或被堆積在用於清洗該 等基板之封閉體中。接著,一輸送機可用以將該等玻璃 ' &板分組成㈣適合大小分批,其包含⑽如卜批或多 、 批、兩批或兩批以上或三批或三抵以上。接著,可在一熱 處理腔室(例如-高溫低氧親道爐腫)中處理該等玻璃基 板,此後可檢驗玻璃。可施加隔離介質,且可堆叠玻璃且 不實體接觸經塗佈表面。 在一態樣中,處理一基板之一方汰 万去可包含修整一或多個 157234.doc 201216367 玻璃基板之-邊緣。該方法可包含沖洗該〜個玻璃美 板。該方法可包含將該-或多個玻璃基板分組成—批或: 批。該方法可包含使各分批退火。該方法可包含堆疊該 或多個玻璃基板之各者。 修整可包含研磨一或多個邊緣。該方法可包含將一或多 個玻璃基板載入至一熱處理腔室中》—或多個玻璃基板之 各者可包含一經塗佈表面。該載入可包含傳輸一或多個玻 璃基板且不實體接觸經塗佈表面之任一者。該載入可包含 將一或多個玻璃基板放置在一或多個陶莞滾輪上。該熱處 理腔室可包含該一或多個陶瓷滾輪。該方法可包含在退火 期間來回振蘆該一或多個陶究滾輪。一或多個玻璃基板之 各者可包含一經塗佈表面。該堆疊可包含使一或多個玻璃 基板之各者彼此垂直相鄰地定位使得一經塗佈表面不接觸 一垂直相鄰基板之一底面。該堆疊可包含將玻璃隔離介質 施加於一或多個玻璃基板之間。該退火可包含將一或多個 玻璃基板加熱至約3 00°C以上。該退火可包含將一或多個 玻璃基板加熱至約80CTC以下。該退火可包含使一或多個 玻璃基板加熱超過約5分鐘。該退火可包含使一或多個玻 璃基板加熱不超過約30分鐘》該退火可包含在一環境中加 熱一或多個玻璃基板。該退火可包含在包含一成形氣體之 一氛圍中加熱一或多個玻璃基板。該退火可包含在包含氫 氣之一氛圍中加熱一或多個玻璃基板。該退火可i 3在匕 含氮氣之-氛圍中加熱-或多個玻璃基板。該退火可包含 在包含氧氣之-氛圍中加熱一或多個玻璃基板。該沖洗可 157234.doc -4- 201216367 包含在一容器中沈積一或多個玻璃基板之各者》該沖洗可 包含在一溶液中清洗一或多個玻璃基板之各者。該退火可 包含在一輥道爐膛中加熱一或多個玻璃基板》該退火可包 含在一熱處理腔室中加熱一或多個玻璃基板。該退火可包 含在一馬弗管式爐中加熱一或多個玻璃基板。該退火可包
W 含在一帶式爐中加熱一或多個玻璃基板。該分組可包含將 一或多個玻璃基板聚集成一批或多批。該分組可包含將一 或多個玻璃基板聚集成三批或三批以下。該分組可包含將 一或多個玻璃基板聚集成包含一並排組態之若干批。該分 組可包含將一或多個玻璃基板聚集成包含一堆疊組態之若 干批《該方法可包含在使各分批退火之後檢驗一或多個玻 璃基板。 【實施方式】 圖1包含一流程圖,其繪示以一高容量完全自動化模式 處理基板之一方法,該方法可包含一高溫活化方法。在步 驟101中,一或多個基板可經受一邊緣研磨製程,可在此 期間研磨基板之一或多個邊緣^ (步驟101亦可包含任何其 他適合之邊緣修整製程)。可使用任何適合儀器(包含(例 如)任何適合機械或光學工具)來執行邊緣研磨製程。例 如’邊緣研磨製程可*將—或多個f射導引至基板之一或 多個邊緣處組成。邊緣研磨製程可由減少基板之一或多個 邊緣之-或多個部分組成。例如,邊緣研磨製程可由使基 板之-或多個邊緣成圓形組成。例如,在邊緣研磨製程二 後’基板可具有-或多個實質上圓形邊緣。在邊緣研磨製 157234.doc 201216367 程之後’基板之一或多個邊緣可具有改良耐用性。基板可 包a任何適合基板材料,其包含(例如)玻璃(例如鈉鈣玻 璃)。例如,邊緣研磨製程可產生具有一或多個圓形邊緣 及改良耐用性之一玻璃基板。基板可包含一或多個塗層, 且基板之一或多個邊緣可實質上無該一或多個塗層。邊緣 研磨製程可發生在任何適合環境中,其包含(例如)在任何 適合溫度下,該溫度包含(例如)大於約1〇β(:、大於約 20 C、小於約50°c、小於約4〇〇c或小於約5〇它。邊緣研磨 製程可發生在約20°C至約30°C之一溫度下。 圖2綠具有形成於一樣品基板相鄰處之一塗層之該樣 。口基板。特定言之,圖2&描繪具有一塗層21〇之一基板 2〇〇 °基板200可包含任何適合基板材料,其包含(例如)一 玻璃(例如鈉鈣玻璃)^塗層21〇可包含任何適合光伏打模組 塗層,其包含(例如)一透明導電氧化物層、一透明導電氧 化物堆疊、一或多個障壁層、一或多個緩衝層、一或多個 半導體層及/或一或多個背接觸層。塗層21〇可包含一單一 材料之一單一層,或塗層210可包含一或多個單獨材料之 多個層。例如’塗層210可包含一透明導電氧化物堆疊, 其可包含基板200上之全部彼此相鄰之(例如)一障壁層、一 透明導電氧化物層及一緩衝層。例如,塗層21 〇可包含一 透明導電氧化物層’其可包含任何適合導電材料(包含(例 如)一録錫層或一鋅錫層塗層21〇可佔有基板2〇〇上之一 可觀數量之表面積’其包含基板200之幾乎全部表面積。 基板200之表面可具有無塗層21〇之一或多個區域。例如, ]57234.doc -6- 201216367 « 基板200之一或多個邊緣2〇1可實質上無塗層21〇之任何部 勿。例如’在處理之前,具有塗層210之基板2〇〇可經受一 邊緣切除製程,可在此期間移除塗層之一或多個部分。此 • 一邊緣切除製程可用以自基板200之邊緣201移除塗層,從 而保留沿基板2〇〇之表面之一或多個暴露部分。塗層材料
W 之邊緣201可用於處置基板200。 返回參考圖1,舉例而言,在步驟1〇1中,具有塗層21〇 之一或多個基板200可被載入至一邊緣處理腔室中,且不 實體接觸塗層210之任何部分。無塗層邊緣2〇丨可用以將具 有塗層210之基板2〇〇之任何者傳輸至用於研磨各基板2〇〇 之一或多個邊緣201之邊緣處理腔室中。在邊緣研磨製程 之後,在步驟102中,經塗佈玻璃基板可經沖洗以移除任 何無用材料、塗層或碎屑。各種技術可用以沖洗基板。例 如’經塗佈玻璃基板可被沈積至用於清洗之一容器中。在 沖洗之後,在步驟1〇3中,經塗佈玻璃基板可被分組成任 何適合數量之分批,其包含(例如)一批或多批、兩批或兩 批以上、二批或二批以上或四批或四批以下。在步驟1〇4 中,經塗佈玻璃基板可被載入至用於高溫熱處理之一熱處 . 理腔室中。任何適合熱處理腔室可用於步驟1〇4,其包含 ' (例如)任何適當加熱爐或熔爐(包含(例如)一馬弗管式爐或 一帶式爐)。熔爐或加熱爐可具有陶瓷滾輪,可基於該等 陶瓷滾輪而使經塗佈玻璃基板傳輸通過加熱爐或熔爐。該 熱處理腔室可具有可包含-環境條件之一受控環境。該熱 處理腔至可具有一或多個區,該一或多個區之各者可含有 157234.doc 201216367 組唯一受控條件。例如,該熱處理腔室可包含 經塗佈玻璃基板之-進人點之―第—區,且可包含一實質 上低壓環境。一第二區(與該第一區至少部分隔離及不同) 可包含一略微超壓環境。該熱處理腔室可包含陶瓷滾輪以 於該第一區與該第二區之間及/或腔室内之任何額外區之 間傳輸經塗佈玻璃基板。該熱處理腔室可包含具有一惰性 氣圍之_或多個區β 該熱處理腔室可經組態以一次處理一個以上經塗佈玻璃 基板。例如,該熱處理腔室可經組態以一次處理一或多 個、兩個或兩個以上、三個或三個以上或少於四個之經塗 佈玻璃基板。該熱處理腔室可經組態以處理及/或輸出一 高容量基板。例如’該熱處理腔室可經組態以處理並排定 位之兩個或兩個以上基板。該熱處理腔室亦可經組態以收 容沿一堆疊定向之一或多個經塗佈玻璃基板。待處理之一 批兩個或兩個以上基板内之各基板可一次一個地被卸載, 或可與各自分批内之其他基板同時存在。該熱處理腔室可 經組態而以任何適合速度處理經塗佈玻璃基板。例如,該 熱處理腔室可包含經組態以加快或減緩處理速度之一帶式 爐。該帶式爐可回應於各種參數(包含(例如)溫度)之任一 者而調整處理速度。該熱處理腔室亦可經組態以使用各種 沈積技術(包含(例如)汽相傳輸沈積)來沈積一或多個層。 一或多個層之汽相傳輸沈積可將退火步驟供應給基板上之 一或多個塗層。 該熱處理腔室可裝配有滾輪,在退火製程之上升及保持 157234.doc 201216367 期之後該等滾輪可經組態以在一冷卻製程期間來回振盪基 板。可使經塗佈玻璃基板冷卻任何適合持續時間。例如, 經塗佈玻璃基板可經受一實質上快速之冷卻製程。在該冷 . 卻製程期間,可調整一或多個大氣條件,其包含(例如)腔 至中之氧氣量。例如,在經塗佈玻璃基板之冷卻期間,腔 室中之氧氣含量可保持足夠低或替代地保持足夠高。腔室 中之大氣條件可包含一氣體,其包含任何適合氧氣含量, 包含(例如)大於約70%、大於約80%、大於約90。/。或小於約 95%之氧氣或大於約1%、大於約5% '大於約1〇%、大於約 20%、小於約30%、小於約15%或小於約2%之氧氣。具有 塗層210之基板200(來自圖2a)之退火可產生退火塗層 220(來自圖2b)。相較於塗層之預退火組分,退火塗層22〇 可具有一更穩固組分。例如,對於包含一半導體吸收體層 之一塗層220,退火步驟可實質上減少缺陷之數量,藉此 改良一所得光伏打模組之載體濃度。 基板可在任何溫度下退火以最佳化一所得光伏打裝置之 性能。例如,一或多個基板可在大於約3〇〇〇c、大於約 4〇〇°C、大於約500。(:、小於約8〇〇〇c、小於約7〇〇它或小於 - 約600°C之一溫度下退火。該一或多個基板可在任何適合 • 持續時間内退火,包含(例如)大於約30秒、大於約1分鐘、 大於約5分鐘、大於約1〇分鐘、大於約15分鐘小於約3〇 分鐘、小於約25分鐘或小於約20分鐘。 可使用任何適合方式來使基板退火。例如,一或多個基 板可被載入至經組態以接收一或多種氣體之一熱處理腔室 157234.doc 201216367 中。例如’該一或多個基板可被載入至一熱處理腔室中且 在一環境中退火。例如,可藉由在退火步驟期間使適當數 量之氫氣及氮氣流入至腔室中而使一成形氣體環境形成於 熱處理腔室内。任何適合比率之氮氣與氫氣可被併入至退 火製程中。例如,該環境可包含大於約70%、大於約 80%、大於約90%或小於約95%之氮氣,及/或大於約1%、 大於約5%、大於約10%、大於約2〇%、小於約3〇%、小於 約15%或小於約2%之氫氣。任何適合氣體可被沈積至熱處 理腔室中以實現基板之最佳處理。例如,可在退火期間將 適S數量之氧氣及/或氬氣供給至熱處理腔室中。 在步驟1〇4中,$火製程可包含一實質上快速上升階 段、接著之一適當保持期及一隨後降溫期。各階段可發生 在任何適合持續時間内。例如,該上升階段可發生在一實 質上較短之持續時間内,例如小於約i分鐘或小於㈣ 秒》替代地,該上升階段可實質上持續更長時間,其包含 (例如)大於約i分鐘、大於約2分鐘、大於約5分鐘或小於: 1〇分鐘。類似地’該降溫期可發生在-短或長持續時間 ^包含(例如)A於約1分鐘、大於叫鐘、大於約5分鐘 或小於約10分鐘《該保持時間實質上可以「 (即,對於一15分鐘退火,保持時間可為約15 n日㈣ 退火可導致基板上之一f右钕变苗迎 题)界疋。 守双丞板上之更有效率更穩固塗層 可消除或以其他方式大幅減少基板上之一 ,退火 此等缺陷之消除可導致-更高載體渡度,藉此導2 改良之光伏打裝置性能。 精此導致 157234.doc •10· 201216367 在退火步驟1 04之後,經塗佈玻璃基板可沿一較佳定向 而定位以用於將來處理。例如,在步驟105中,可使經塗 佈玻璃基板彼此相鄰堆疊。圖3描繪垂直堆叠於一經塗佈 玻璃基板32相鄰處之一經塗佈玻璃基板30。玻璃隔離介質 可施加於各經塗佈玻璃基板之間以使經塗佈玻璃基板32之 退火塗層220與經塗佈玻璃基板30之基板200之底面隔離。 一或多個額外經塗佈玻璃基板可經由額外隔離介質而堆疊 在經塗佈玻璃基板30上,以避免實體接觸塗層及上方所堆 疊之基板。可垂直堆疊任何適合數量之基板,其包含(例 如)兩個或兩個以上、五個或五個以上、十個或十個以上 或十五個或十五個以下。 使用本文中所論述之方法及系統而處理之基板可用於製 造可併入至一或多個光伏打模組中之一或多個光伏打電 池。例如,使用前面所提及之方法及系統而處理之基板可 具有沈積在該等基板上之各種層,其包含(例如)一或多個 光伏打裝置層(例如碲化鎘)。由此所製造之光伏打電池可 被併入至可包含一或多個子模組之一或多個光伏打模組 中。該等光伏打模組可被併入至用於發電之各種系統中。 例如,一光伏打模組可包含由串聯連接之多個光伏打電池 組成之一或多個子模組。一或多個子模組可經由一共用電 池而並聯連接以形成一光伏打模組。 一匯流排總成可附接至一光伏打模組之一接觸面以實現 額外電組件(例如一或多個額外模組)之連接。例如,一第 一條雙面膠帶可沿模組之一長度而分佈,且一第一鉛箱可 157234.doc • 11- 201216367 施加至該第一條雙面膠帶之相鄰處。一第二條雙面膠帶 (小於該第一條)可施加至該第一鉛箔之相鄰處。一第二鉛 箔可施加至該第二條雙面膠帶之相鄰處。該等膠帶及鉛箔 可經定位使得該第一鉛箔之至少一部分被暴露且該第二鉛 羯之至少一部分被暴露。在施加該等膠帶及鉛箔之後,複 數個匯流排可沿模組之接觸區而定位。該等匯流排可彼此 平行地以任何適合間距定位。例如,該複數個匯流排可包 含定位在該第一鉛箔之一部分上之至少一匯流排及定位在 該第二鉛箔之一部分上之至少一匯流排。該匯流排及鉛箔 之該部分(已將該匯流排施加在該部分上)可界定一正或負 區。一滾輪可用以建立沿該第一或第二鉛箔之一截面之一 線圈。該線圈可螺旋穿過一隨後沈積之背面玻璃之孔。光 伏打模組可連接至其他電子組件,其等包含(例如)一或多 個額外光伏打模組例如,光伏打模組可電連接至一或多 個額外光伏打模組以形成一光伏打陣列。 光伏打電池/模組/陣列可包含在用於發電之一系統中。 例如,一光伏打電池可由一光束照射以產生一光電流。可 收集該光電流並將其自直流(DC)轉換為交流(AC),且將該 光電流分配給一電力網。可將任何適合波長(包含(例如)大 於400奈米或小於700奈米(例如紫外光))之光導引至該電池 處以產生該光電流。由—光伏打電池產生之光電流可與由 其他光伏打電池產生之光電流組合。例如,光伏打電池可 為-光伏㈣列巾之-或多個光伏打漁之部分,可利用 及分配來自該光伏打陣列之聚集電流。 157234.doc •12- 201216367 以繪示及例示方式提供上述實施例。應瞭解,以上所提 供之實例可在某些態樣中被修改且仍在申請專利範圍之範 内。應瞭解’雖然已參考以上較佳實施例而描述本發 明,但其他實施例係在申請專利範圍之範疇内。 【圖式簡單說明】 圖1係處理多個基板之一自動化方法之一流程圖。 圖2a描繪具有形成於一玻璃基板相鄰處之一塗層之該玻 璃基板。 圖2b描繪具有形成於一玻璃基板相鄰處之一塗層之該玻 璃基板^ 圖3描繪堆疊多個經塗佈基板之一方法。 【主要元件符號說明】 30 經塗佈玻璃基板 32 經塗佈玻璃基板 101 邊緣研磨製程 102 沖洗基板 103 將基板分組成一批或多批 104 使基板退火 105 堆疊基板 200 基板 201 邊緣 210 塗層 220 退火塗層 157234.doc -13·
Claims (1)
- 201216367 七、申請專利範圍: 1· 一種處理基板之方法,該方法包括: 修整一或多個玻璃基板之一邊緣; 沖洗該一或多個玻璃基板; 將該一或多個玻璃基板分組成一批或多批; ' 使各分批退火;及 堆疊該一或多個玻璃基板之各者。 2. 如請求項1之方法,其中該修整包括研磨一或多個邊 緣。 3. 如請求項1之方法,其進一步包括將該一或多個玻璃基 板載入至熱處理腔室中,其中該一或多個玻璃基板之 各者包括一經塗佈表面,且該載入包括傳輸該一或多個 玻璃基板且不實體接觸該等經塗佈表面之任一者。 4·如請求項3之方法,其中該载入進一步包括將該一或多 個玻璃基板放置在一或多個陶竟滾輪上,其中該熱處理 腔室包括該一或多個陶瓷滾輪。 5.如請求項4之方法’其進一步包括在該退火期間來回振 盪該一或多個陶瓷滾輪。 .6.如凊求項1之方法’其中該-或多個玻璃基板之各者包 . 括—經塗佈表面,且該堆疊包括使該-或多個玻璃基板 各者彼此垂直相鄰地定位使得一經塗佈表面不接觸一 垂直相鄰基板之一底面。 7·如請求項6之方法,其中該堆疊進一步包括將玻璃隔離 介質施加於該一或多個玻璃基板之間。 157234.doc 201216367 8.如請求们之方法,彡中該退火包括將一或多個玻璃基 板加熱至約300°C以上。 9·如請求項1之方法,其中該退火包括將一或多個玻璃基 板加熱至約800°C以下。 1〇·如請求们之方法’其中該退火包括使—或多個玻璃基 板加熱超過約5分鐘。 如請求項1之方法,其中該退火包括使一或多個玻璃基 板加熱不超過約30分鐘。 12.如請求項1之#法,其中該退火包括在一環i竟中加熱一 或多個玻璃基板。 13·如項1之方法’其中該退火包括在包括-成形氣體 之一氛圍中加熱一或多個玻璃基板。 14·如峭求項1之方法’其中該退火包括在包括氫氣之-氛 圍中加熱一或多個玻璃基板。 1 5·如凊求項1之方法,其中該退火包括在包括氮氣之-氛 圍中加熱一或多個玻璃基板。 16. 如叫求項丨之方法’其中該退火包括在包括氧氣之一氛 圍中加熱一或多個玻璃基板。 17. 如清求項1之方法,其中該沖洗包括: 在一容器中沈積該一或多個玻璃基板之各者;及 在—溶液中清洗該一或多個玻璃基板之各者。 18. 如請求項1之方法’其中該退火包括在一輥道爐膛中加 熱一或多個玻璃基板。 19·如請求項1之方法,其中該退火包括在一熱處理腔室中 157234.doc 201216367 加熱一或多個玻璃基板β 20.如請求項1之方法,其中該退火包括在一馬弗管式爐中 加熱一或多個玻璃基板。 , 21.如請求項丨之方法,其中該退火包括在一帶式爐中加熱 一或多個玻璃基板。 22.如請求項1之方法,其中該分組包括將一或多個玻璃基 板聚集成一批或多批。 23·如請求項1之方法,其中該分組包括將一或多個玻璃基 、 板聚集成三批或三批以下。 24. 如請求項1之方法’其中該分組包括將一或多個玻璃基 板聚集成包括一並排組態之若干批。 25. 如請求項1之方法’其中該分組包括將一或多個玻璃基 板聚集成包括一堆疊組態之若干批。 26_如請求項1之方法,其進一步包括在使各分批退火之後 檢驗該一或多個玻璃基板。 157234.doc
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2011
- 2011-06-24 CN CN201180032807.8A patent/CN102971110B/zh active Active
- 2011-06-24 WO PCT/US2011/041757 patent/WO2012003139A1/en active Application Filing
- 2011-06-28 US US13/170,390 patent/US8850852B2/en active Active
- 2011-06-30 TW TW104102428A patent/TWI560777B/zh not_active IP Right Cessation
- 2011-06-30 TW TW100123172A patent/TWI476835B/zh not_active IP Right Cessation
-
2014
- 2014-09-04 US US14/477,056 patent/US20140370641A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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US20140370641A1 (en) | 2014-12-18 |
US8850852B2 (en) | 2014-10-07 |
CN102971110A (zh) | 2013-03-13 |
TW201519323A (zh) | 2015-05-16 |
US20120000247A1 (en) | 2012-01-05 |
TWI476835B (zh) | 2015-03-11 |
WO2012003139A1 (en) | 2012-01-05 |
CN102971110B (zh) | 2015-04-15 |
TWI560777B (en) | 2016-12-01 |
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