TW201207913A - Two-stage encapsulation removing method for semiconductor device and laser grooving device - Google Patents
Two-stage encapsulation removing method for semiconductor device and laser grooving device Download PDFInfo
- Publication number
- TW201207913A TW201207913A TW99127072A TW99127072A TW201207913A TW 201207913 A TW201207913 A TW 201207913A TW 99127072 A TW99127072 A TW 99127072A TW 99127072 A TW99127072 A TW 99127072A TW 201207913 A TW201207913 A TW 201207913A
- Authority
- TW
- Taiwan
- Prior art keywords
- laser
- dust
- semiconductor
- component
- groove
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 149
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000005538 encapsulation Methods 0.000 title claims abstract description 16
- 238000012634 optical imaging Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000003486 chemical etching Methods 0.000 claims abstract description 6
- 239000000428 dust Substances 0.000 claims description 78
- 239000000565 sealant Substances 0.000 claims description 38
- 238000007789 sealing Methods 0.000 claims description 37
- 238000001816 cooling Methods 0.000 claims description 28
- 238000007664 blowing Methods 0.000 claims description 26
- 239000003566 sealing material Substances 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000008393 encapsulating agent Substances 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 13
- 238000012876 topography Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 6
- 238000002485 combustion reaction Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000000084 colloidal system Substances 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 238000003672 processing method Methods 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 230000005641 tunneling Effects 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims 2
- 150000004985 diamines Chemical class 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- 238000005553 drilling Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 18
- 239000002253 acid Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000007488 abnormal function Effects 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000012812 sealant material Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Laser Beam Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99127072A TW201207913A (en) | 2010-08-13 | 2010-08-13 | Two-stage encapsulation removing method for semiconductor device and laser grooving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99127072A TW201207913A (en) | 2010-08-13 | 2010-08-13 | Two-stage encapsulation removing method for semiconductor device and laser grooving device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201207913A true TW201207913A (en) | 2012-02-16 |
| TWI411026B TWI411026B (enExample) | 2013-10-01 |
Family
ID=46762362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW99127072A TW201207913A (en) | 2010-08-13 | 2010-08-13 | Two-stage encapsulation removing method for semiconductor device and laser grooving device |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201207913A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104517805A (zh) * | 2013-09-26 | 2015-04-15 | 蔡宜兴 | 方形扁平无引脚封装晶片的除胶方法 |
| CN114334749A (zh) * | 2022-03-09 | 2022-04-12 | 绍兴中芯集成电路制造股份有限公司 | 塑封器件的开封方法 |
| CN117238820A (zh) * | 2023-09-19 | 2023-12-15 | 南京江智科技有限公司 | 一种半导体封装结构及其封装方法 |
| TWI883466B (zh) * | 2023-06-20 | 2025-05-11 | 東捷科技股份有限公司 | 邊緣材料移除設備及邊緣材料移除方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335208B1 (en) * | 1999-05-10 | 2002-01-01 | Intersil Americas Inc. | Laser decapsulation method |
| JP4509573B2 (ja) * | 2002-03-12 | 2010-07-21 | 浜松ホトニクス株式会社 | 半導体基板、半導体チップ、及び半導体デバイスの製造方法 |
| SG172606A1 (en) * | 2006-06-08 | 2011-07-28 | Apic Yamada Corp | Semiconductor cutting device, semiconductor cutting method, semiconductor cutting system, laser cutting device and laser cutting method |
| JP5096040B2 (ja) * | 2007-05-16 | 2012-12-12 | 日東電工株式会社 | レーザー加工方法及びレーザー加工品 |
-
2010
- 2010-08-13 TW TW99127072A patent/TW201207913A/zh unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104517805A (zh) * | 2013-09-26 | 2015-04-15 | 蔡宜兴 | 方形扁平无引脚封装晶片的除胶方法 |
| CN114334749A (zh) * | 2022-03-09 | 2022-04-12 | 绍兴中芯集成电路制造股份有限公司 | 塑封器件的开封方法 |
| CN114334749B (zh) * | 2022-03-09 | 2022-06-14 | 绍兴中芯集成电路制造股份有限公司 | 塑封器件的开封方法 |
| TWI883466B (zh) * | 2023-06-20 | 2025-05-11 | 東捷科技股份有限公司 | 邊緣材料移除設備及邊緣材料移除方法 |
| CN117238820A (zh) * | 2023-09-19 | 2023-12-15 | 南京江智科技有限公司 | 一种半导体封装结构及其封装方法 |
| CN117238820B (zh) * | 2023-09-19 | 2024-03-08 | 南京江智科技有限公司 | 一种半导体封装结构及其封装方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI411026B (enExample) | 2013-10-01 |
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