TW201145620A - Method of manufacturing light-emitting device - Google Patents

Method of manufacturing light-emitting device Download PDF

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Publication number
TW201145620A
TW201145620A TW100112603A TW100112603A TW201145620A TW 201145620 A TW201145620 A TW 201145620A TW 100112603 A TW100112603 A TW 100112603A TW 100112603 A TW100112603 A TW 100112603A TW 201145620 A TW201145620 A TW 201145620A
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Taiwan
Prior art keywords
light
particles
reflective
manufacturing
anisotropic conductive
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TW100112603A
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Chinese (zh)
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TWI529980B (en
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Hidetsugu Namiki
Shiyuki Kanisawa
Hideaki Umakoshi
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Sony Chemical & Inf Device
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Publication of TWI529980B publication Critical patent/TWI529980B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75314—Auxiliary members on the pressing surface
    • H01L2224/75315—Elastomer inlay
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75314—Auxiliary members on the pressing surface
    • H01L2224/75315—Elastomer inlay
    • H01L2224/75316—Elastomer inlay with retaining mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Wire Bonding (AREA)

Abstract

Provided is a method of manufacturing a light-emitting device, wherein, upon manufacturing a light-emitting device by flip-chip mounting a light-emitting element such as a light-emitting diode (LED) onto a wiring board, using an anisotropic conductive adhesive, light-emitting efficiency can be improved without forming any light reflection layer on the LED element, which will bring about increase in manufacturing cost, and cracks or splintering are prevented from being generated on the light-emitting elements. In order to achieve this, an anisotropic conductive connection is carried out, by arranging a light-reflecting anisotropic conductive adhesive, which contains thermosetting resin constituents, conductive particles, and light-reflecting insulative particles, between the light-emitting elements and the wiring board onto which the light-emitting elements are to be connected, and then, heating and pressurizing the light-emitting elements onto the wiring board with an elastomer head, which has a Shore A rubber hardness (JIS K6253) of not less than 40 and not more than 90 at the pressurizing face thereof.

Description

201145620 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種於配線板異向性導電連接LED元件 等發光元件而成之發光裝置之製造方法。 【先前技術】 於配線板構裝LED元件之情形時，目前係藉由金打線 法進行連接，但利用金線之連接強度並不充分，又，存在 因與密封樹脂間之熱膨脹係數之差較大而導致連接可靠性 降低之問題。進而，存在因金線之光吸收而導致光提取效BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a light-emitting device in which a light-emitting element such as an LED element is electrically connected to an anisotropic conductive layer of a wiring board. [Prior Art] When the LED component is mounted on the wiring board, it is currently connected by the gold wire bonding method, but the connection strength by the gold wire is not sufficient, and the difference in thermal expansion coefficient between the sealing resin and the sealing resin is different. The problem is that the connection reliability is reduced. Furthermore, there is light extraction due to absorption of light from the gold wire.

率（發光效率）降低之問題；或因用於在配線板固定lED 元件的黏晶之硬化速度較慢而導致構裝節拍時間（takt time) 延長之問題。 因此，提出有如下技術：為了改善連接可靠性及節拍 時間，通常使用具有加熱加壓用之金屬壓頭之接合機，經 由異向性導電接著劑於配線板倒裝晶片構裝LED元件，此 時由於異向性導電接著劑中之導電粒子或黏合樹脂會吸 收發光7C件所發出之光’故而為了提高發光效率，於面向 配線板側之LED 7C件表面之一對電極間設置反光層，以將 自LED %件之内部射出至下方（配線板側）之光提取至上 方（專利文獻1 )。 專利文獻1 ··日本特開平u_ 168235號公報 【發明内容】 然而，此種弁；5 44· a 但尤反射層必須以與LED元件表面之一對電 極絕緣之方式ϋ + 1 g 飞藉由金屬蒸鍍法等而設置，於製造上存在無 201145620 法避免成本增加之問題β 曰κ μ # + & 於利用加熱加壓頭進行倒裝 日日片構裝之情形時，存在田 配線板或發光元件之接合面之 凹凸，導致加熱加壓頭對發 峭耵發先兀件之抵壓之面内均勻性降 低’而於發光元件上產 ”生降 座生龜裂或缺損的問題。 本發明之目的在於解決 、 上先則技術之問題，使用Η 向性導電接著劑，於配蝮妬 異 、Ί倒I a曰片構裝發光二極體（LED ) 儿件4發光元件而製造發The problem of a decrease in the rate (luminous efficiency); or the problem that the takt time is prolonged due to the slower hardening speed of the die crystal used for fixing the lED element on the wiring board. Therefore, in order to improve connection reliability and tact time, a bonding machine having a metal indenter for heating and pressurizing is generally used, and an LED element is flip-chip mounted on a wiring board via an anisotropic conductive adhesive. Since the conductive particles or the binder resin in the anisotropic conductive adhesive absorbs the light emitted by the light-emitting 7C member, in order to improve the light-emitting efficiency, a light-reflecting layer is disposed between one of the electrodes on the surface of the LED 7C facing the wiring board side. The light emitted from the inside of the LED % member to the lower side (the wiring board side) is extracted upward (Patent Document 1). Patent Document 1: Japanese Laid-Open Patent Publication No. 168235. SUMMARY OF THE INVENTION However, such a flaw must be ϋ + 1 g by means of insulation from one of the surfaces of the LED element. Metal vapor deposition method or the like is provided, and there is a problem that the manufacturing method does not have the 201145620 method to avoid an increase in cost. β 曰κ μ # + & When there is a case where the heating and pressing head is used for flipping the Japanese wafer assembly, there is a field wiring board. Or the unevenness of the joint surface of the light-emitting element causes a decrease in the in-plane uniformity of the pressing of the heating and pressing head against the squeezing of the squeezing element, and the problem of cracking or chipping of the seat is produced on the light-emitting element. The object of the present invention is to solve the problems of the prior art, and to manufacture a light-emitting diode (LED) device 4 light-emitting element by using a conductive conductive adhesive. hair

我&amp;發九裝置時，即使不於LED 置會導致製造成本增加之光+ 疋件°又 ^ _ 0炙九反射層，亦可改善發光效率， 、、發光7L件不產生龜裂或缺損，而製造發光裝置。 本發明人等在若使異向性導電接著劑本身具備光反射 功能’則可不使發光效率降低之假設下進行潛心研究，結 果發現：藉由於異向性導雷接 导電接者劑摻合光反射性絕緣粒 子’則可不使發光元件之發光效率降低。χ，本發明 得知雖然藉由將接合播$ λ 接口機之加熱加壓頭之材質由金屬變為彈 性體’一般可以無損連接可靠性且不使發光元件上產生龜 裂或缺損而進行抵壓’但若於異向性導電接著劑摻合如上 述之光反射性絕緣粒子，則有於發光元件產生龜裂或缺損 之It开ν ’ it而發現.為了防止此類龜裂或缺損，只要使用 特定之橡膠硬度之彈性體作為欲使用之彈性體即可，從而 完成本發明。 P本發明提供-種製造方法，其係於配線板異向性 導電連接發光元件而成之發光裝置之製造方法其具有以 下之步驟（A)及（B): 步驟（A ) 201145620 於發光元件與待連接該發光元件之配線板之間，配置 3有熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子 之光反射性異向性導電接著劑之步驟；及 步驟（B ) 對配線板，利用抵壓面之蕭氏A橡膠硬度（K6253 ) 為40以上、未達9〇之彈性壓頭加熱加壓發光元件，藉此 進行異向性導電連接之步驟。 再者，戎製造方法亦可更具有以下之步驟（C) 步驟（C ) 使用透明樹脂密封被異向性導電連接於配線板上之發 光元件的步驟。 又，本發明提供一種藉由上述製造方法而製造之發光 裝置。 本發明之發光裝置之製造方法中所使用之光反射性異 向性導電接著劑由於含有光反射性絕緣粒子，故而可反射 發光7L件所發出之光。因此，本發明之發光裝置之製造方 法可不使發光元件之發光效率降低而於配線板異向性導電 連接發光元件。 又，本發明之發光裝置之製造方法中所使用之加埶加 壓頭由於係設定為最佳硬度之彈性壓頭，故而可對配線 板，以最佳之抵壓均勻地加壓加熱發光元件。因此，本發 明之發光裝置之製造方法可於使用含有光反射性絕緣粒子 之光反射性異向性導電接著劑而進行異向性導電連接時， 防止發光元件產生龜裂或缺損。 201145620 【實施方式】 本發明係關於一種於配線板異向性導電連接發光元件 而成之發光裝置之製造方法，其具有步驟（A)與步驟（B)。 步驟（A广於發光元件與待連接該發光元件之配線板之間， 配置含有熱硬化性樹脂組成物、導電粒子及光反射性絕緣 粒子之光反射性異向性導電接著劑之步驟；步驟（B ):對 配線板，利用抵壓面之蕭氏八橡膠硬度（JISK6253 )為4〇 以上、未達90之彈性壓頭加熱加壓發光元件，藉此進行異 向性導電連接之步驟。該方法亦可更具有步驟（C):使用 透明樹脂密封被異向㈣電連接力配線板上之發光元件之 步驟。 以下，一面參照圖式， 本發明。再者，各圖中，相 要素。 一面按照步驟順序具體地說明 同符號表示相同或同等之構成 &lt;步驟（A) &gt; 首先’如圖1 A所示，於發光元件1與待連接發光元件 1之配線板2之間，通常於欲相互連接之發光元件】之電極 la與配線板之電極2a互相對向之間，藉由公知方法、例如 :::刷法、移轉印刷法、點膠塗佈法等，將光反射性異 二電接著劑3根據其形態（液狀、糊狀、膜 進行配置。且躺寸 έ，於配線板2之至少電極2a上暫時貼 ’反射性異向性導電接著劑3，以夾住該光反射性異亡 導電接著劑3之太…… /尤汉射性異向性 ^發光兀*件1之電極la與配線板2之 1：極2a相對向。 201145620 再者，為了提高連接可靠性，亦可於 電極2a之任一者或兩者上藉由公知方法形成凸塊。、 本發明中所使用之發光元件卜可使用與先前發光震置 t所使用者相同之發光元件，例 .T Fn _ ^ x j列舉發先二極體元件 (LED το件）、雷射二極體元件（LD元件）等。 本發明中所使用之配線板2,亦可使用與先前發光裝置 中所使用者相同之配線板，例如可使用石夕半導體基板、玻 璃配線板、陶瓷配線板等。又’配線板2之配線 /S間距等亦可採用先前公知之構成。 、 步驟（A)中所使用之光反射性異向性導電接著劑3係 不僅有助於發光幻牛i與配線板2之間之異向性導電連 接，亦可反射發光元件i所發出之光而有助於提高發光效 率，其含有熱硬化性樹脂組成斗勿3a、與分散於其中之導電 粒子3 b及光反射性絕緣粒子3 c。 光反射性I㈣子3。隸人射至異向料電接著劑之 光反射至外部’而料異向性導電接著劑光反射性。 -般而言，具有光反射性之粒子包含：金屬粒子，利 用樹脂被覆金屬粒子而成之粒子，於自然光下為灰色至白 色之金屬氧化物、金屬氮化物、金屬硫化物等之無機粒子， 利用無機粒子被覆樹脂核心粒子而成之粒子，不論粒子之 材質如何其表面有凹凸之粒子。但是’該等粒子中，由於 要求表現出絕緣性’故而可用於本發明之光反射性絕緣粒 子不包含金屬粒子。又，金屬氧化物粒子中，# ιτ〇之類 的具有導電性者無法使用。又，一般而言，較佳為使用折 201145620 射率為1.4以上者。 此種光反射性絕緣粒子3e之較佳具體例，可列舉：氧 化石夕（SiCh)、氧化欽（Ti〇2)、氮化删（BN)、氧化辞（ 氧化鋁（Al2〇3)、鈦酸鋇、鈦酸鳃、硫化鋅、鉛白、硫酸鋇、 氧:匕鎂、硫化鋅、碳酸鈣、氫氧化鋁、雲母、黏土礦物等。 該=光反射性絕緣粒子3e可併用2種以上。此處，為了賦 予高於光反射性異向性導電接著们之反射率，該等光反 射性絕緣粒子中，亦可較佳地使用折射率高於所使用之 熱硬化性樹脂組成物3a者，具體而言，可較佳地使用氧化 鈦（加2)、氮化蝴（BN)、氧化鋅（Zn〇)及氧化銘（MM 等’可尤佳地使用氧化鈦（Ti〇2)。 …光反射性絕緣粒子3e之形狀，可為球狀、鱗片狀、不 疋升少狀名十狀等，若考慮反射效率，則較佳為球狀、鱗片 狀。又’其平均粒徑’若考慮到於粒徑為入射波長之1/2 時散射效率成為變為最高之Mie區域，且對粒子之入射光 被無損失地反射及可見光波長為_〜78Qnm，則較佳為15〇 :5〇〇nm，更佳為19〇〜39〇nm。於此情形時，較佳為根據 發光元件之發光波長衫粒徑。例如，於❹藍色⑽元 件之情形時’由於發光波長分佈於4〇〇〜55一故而較佳 之平均粒徑為200〜275nme再者，於鱗片狀粒子之情形時 =較佳為將長徑作為基準。此處，「平均」粒徑係指利 雷射繞射式粒度分佈測定裝置（例如SAU3L島 津製作所製造）測得之平均粒徑。 於本發明中，可使用以上你_ 上所說明之無機粒子作為光反 201145620 射性絕緣粒子，亦im u m 4 了使用利用透明之絕緣性樹脂被覆鱗片 狀或球狀金屬粒子之表面而成之樹脂被覆金屬粒子作為光 反射性絕緣粒子。此處，金屬粒子可列舉錄、銀、铭等。 粒子之形狀可列舉無固定形狀、球狀、鱗片狀、針狀等， 其中’就光擴散效果之觀點而言較佳為球狀，就全反射效 果之觀點而言較佳為鱗片狀。就光反射率之觀點而言，尤 佳為鱗片狀銀粒子。該等金屬粒子較佳為於被覆絕緣性樹 脂之前’預先利用石夕烷偶合劑將卜環氧丙氧氧基或乙烯 基等導入至金屬表面。 光反射性絕緣粒子之樹脂被覆金屬粒子之大小根據形 狀而有所不同，但一般而言若過大，則有阻礙異向性導電 粒子所致之連接之虞，若過小，則變得難以反射光線，因 此於球狀之情形時，平均粒徑較佳為Q丨〜3()心，更佳為 〇.2〜Wm。X，就與上述相同之觀點而言，於鱗片狀: 情形時，平均長徑較佳為。.卜⑽⑽，更佳為U一 平均厚度較佳為0.01〜10ym，更佳為〇」〜5心。此處， 於經絕緣被覆之情形時，光反應性粒子之大小亦具有 緣被覆之大小。 〃' 此種樹脂被覆金屬粒子上之被覆用之樹脂，可使用各When I am sending a device, even if it is not placed in the LED, it will increase the manufacturing cost of the light + °°°^ _ 0炙9 reflective layer, which can improve the luminous efficiency, and the 7L parts will not be cracked or damaged. And manufacturing a light-emitting device. The inventors of the present invention conducted an intensive study on the assumption that the anisotropic conductive adhesive itself has a light reflecting function, and that the light-emitting efficiency is not lowered, and it is found that the bonding is achieved by the anisotropic conduction of the conductive bonding agent. The light-reflective insulating particles' can reduce the luminous efficiency of the light-emitting element. In other words, the present invention has been known that the material of the heating and pressurizing head of the bonding λ interface machine is changed from a metal to an elastic body. Generally, the connection reliability can be reduced without causing cracks or defects in the light-emitting element. But if the anisotropic conductive adhesive is blended with the light-reflective insulating particles as described above, it is found in the crack or defect of the light-emitting element. In order to prevent such cracks or defects, The present invention can be completed by using an elastomer having a specific rubber hardness as the elastomer to be used. The present invention provides a method of manufacturing a light-emitting device in which a wiring board is anisotropically electrically connected to a light-emitting element, which has the following steps (A) and (B): Step (A) 201145620 for a light-emitting element a step of disposing a light-reflective anisotropic conductive adhesive having a thermosetting resin composition, conductive particles, and light-reflective insulating particles between the wiring board to be connected to the light-emitting element; and step (B) of wiring The plate is subjected to an anisotropic conductive connection by heating the pressure light-emitting element with an elastic ram of 40 or more and having a hardness of 40 or more and having a hardness of 40 or more. Further, the crucible manufacturing method may further have the following step (C). Step (C) A step of sealing the electroconductive element which is anisotropically electrically connected to the wiring board by using a transparent resin. Further, the present invention provides a light-emitting device manufactured by the above manufacturing method. Since the light-reflective anisotropic conductive adhesive used in the method for producing a light-emitting device of the present invention contains light-reflective insulating particles, the light emitted by the light-emitting 7L member can be reflected. Therefore, the method of manufacturing the light-emitting device of the present invention can electrically connect the light-emitting element to the wiring board in an anisotropic manner without lowering the light-emitting efficiency of the light-emitting element. Moreover, since the twisting press head used in the method for manufacturing a light-emitting device of the present invention is an elastic head which is set to an optimum hardness, the light-emitting element can be uniformly pressurized and pressurized uniformly with respect to the wiring board. . Therefore, in the method of manufacturing a light-emitting device of the present invention, when an anisotropic conductive connection is performed using a light-reflective anisotropic conductive adhesive containing light-reflective insulating particles, cracking or chipping of the light-emitting element can be prevented. [Embodiment] The present invention relates to a method of manufacturing a light-emitting device in which a wiring board is anisotropically electrically connected to a light-emitting element, which has steps (A) and (B). Step (A) is a step of arranging a light-reflective anisotropic conductive adhesive containing a thermosetting resin composition, conductive particles, and light-reflective insulating particles between the light-emitting element and the wiring board to be connected to the light-emitting element; (B): The step of performing the anisotropic conductive connection by heating the pressure-sensitive light-emitting element with an elastic embossing of 4 〇 or more and less than 90 by the Xiao's eight rubber hardness (JISK6253) of the pressure-receiving surface. In this method, the step (C) may further include the step of sealing the light-emitting elements on the anisotropic (four) electrical connection wiring board with a transparent resin. Hereinafter, the present invention will be described with reference to the drawings. The same reference numerals are used to denote the same or equivalent components in the order of steps. <Step (A) &gt; First, as shown in FIG. 1A, between the light-emitting element 1 and the wiring board 2 to which the light-emitting element 1 is to be connected, Usually, the electrode 1a of the light-emitting element to be connected to each other and the electrode 2a of the wiring board are opposed to each other by a known method, for example, a brushing method, a transfer printing method, a dispensing method, or the like. Reflective The adhesive 3 is disposed in accordance with the form (liquid, paste, or film), and is temporarily placed on the at least electrode 2a of the wiring board 2 with a reflective anisotropic conductive adhesive 3 to sandwich the light reflection. Sexually-conducting conductive adhesive 3 is too... /Yuhan-induced anisotropy^Luminous 兀*The electrode 1 of the piece 1 and the wiring board 2 of 1: The pole 2a is opposed. 201145620 Furthermore, in order to improve the connection reliability, The bumps may be formed by any known method on either or both of the electrodes 2a. The light-emitting elements used in the present invention may use the same light-emitting elements as those of the previous light-emitting devices, for example, T. Fn _ ^ xj exemplifies a first diode element (LED τ), a laser diode element (LD element), etc. The wiring board 2 used in the present invention can also be used as a user in a conventional illuminating device. For the same wiring board, for example, a Shiyue semiconductor substrate, a glass wiring board, a ceramic wiring board, etc. can be used. The wiring of the wiring board 2, the S pitch, and the like can also be formed by a conventionally known configuration. Light-reflective anisotropic conductive adhesive 3 series not only helps hair The anisotropic conductive connection between the optical illusion i and the wiring board 2 can also reflect the light emitted by the illuminating element i to improve the luminous efficiency, and the thermosetting resin is composed of the squeegee 3a and dispersed therein. The conductive particles 3 b and the light-reflective insulating particles 3 c. The light-reflective I (four) sub-3. The light that is incident on the anisotropic charge is reflected to the outside and the anisotropic conductive adhesive is light-reflective. In general, the light-reflecting particles include: metal particles, particles obtained by coating metal particles with a resin, and inorganic particles such as metal oxides, metal nitrides, and metal sulfides which are gray to white under natural light. The inorganic particles are coated with the resin core particles, and the particles have irregularities on the surface regardless of the material of the particles. However, in the above-mentioned particles, the light-reflective insulating particles which can be used in the present invention do not contain metal particles because they are required to exhibit insulating properties. Further, in the metal oxide particles, those having conductivity such as #ιτ〇 cannot be used. Further, in general, it is preferable to use the 201145620 radiation rate of 1.4 or more. Preferable specific examples of such light-reflective insulating particles 3e include: oxidized stone (SiCh), oxidized (Ti〇2), nitrided (BN), and oxidized (alumina (Al2〇3), Barium titanate, barium titanate, zinc sulfide, lead white, barium sulfate, oxygen: barium magnesium, zinc sulfide, calcium carbonate, aluminum hydroxide, mica, clay minerals, etc. The light reflective insulating particles 3e can be used in combination Here, in order to impart a reflectance higher than that of the light-reflective anisotropic conductive material, it is preferable to use a thermosetting resin composition having a refractive index higher than that of the light-reflective insulating particles. 3a, specifically, titanium oxide (plus 2), nitrided butterfly (BN), zinc oxide (Zn〇), and oxidized (MM, etc.) can be preferably used for titanium oxide (Ti〇2). The shape of the light-reflective insulating particles 3e may be spherical, scaly, or less, and may be in the form of a spherical shape or a scaly shape in consideration of the reflection efficiency. When the diameter ' takes into account that the particle diameter is 1/2 of the incident wavelength, the scattering efficiency becomes the highest Mie region, and the particle is infused. The light is reflected without loss and the visible light wavelength is _~78Qnm, preferably 15 〇: 5 〇〇 nm, more preferably 19 〇 to 39 〇 nm. In this case, it is preferably according to the light-emitting wavelength of the light-emitting element. The particle size of the shirt. For example, in the case of an indigo (10) element, 'the average wavelength of the light-emitting wavelength is 4 to 55, and the average particle diameter is 200 to 275 nm. In the case of scaly particles, it is preferable. In order to use the long diameter as a reference, the "average" particle size refers to the average particle diameter measured by a laser diffraction type particle size distribution measuring apparatus (for example, manufactured by SAU3L Shimadzu Corporation). In the present invention, the above can be used. _ The inorganic particles described above are used as the light-reflective insulating particles of the light-reflective 201145620, and the resin-coated metal particles obtained by coating the surface of the scaly or spherical metal particles with a transparent insulating resin as the light-reflective insulation Here, the metal particles may be exemplified by records, silver, or the like. The shape of the particles may be, for example, a non-fixed shape, a spherical shape, a scaly shape, or a needle shape, wherein 'the shape is preferably spherical from the viewpoint of light diffusion effect. , From the viewpoint of total reflection effect, it is preferably scaly. In terms of light reflectance, scaly silver particles are particularly preferable. These metal particles are preferably used in advance before coating the insulating resin. The mixture introduces a glycidoxyoxy group, a vinyl group, etc. onto the metal surface. The size of the resin-coated metal particles of the light-reflective insulating particles varies depending on the shape, but generally, if it is too large, the anisotropy is inhibited. When the connection due to the conductive particles is too small, it becomes difficult to reflect the light. Therefore, in the case of a spherical shape, the average particle diameter is preferably Q丨~3 (), more preferably 〇.2 to Wm. X, in the same manner as above, in the case of scales: in the case of the case, the average length is preferably. (10) (10), more preferably the average thickness of U is preferably 0.01 to 10 μm, more preferably 〇"~5 heart. Here, in the case of being covered by insulation, the size of the photoreactive particles also has the size of the edge coating. 〃' This resin is coated with a resin for coating on metal particles, and each can be used.

種絕緣性樹脂。就機械強度或透明性等 A π机制rfrj g ,可較佳 地利用丙烯酸系樹脂之硬化物。較佳可列舉於過氧 過氧化物等自由基起始劑之存在下，使甲基丙烯 酸曱g曰與甲基丙烯酸2_羥乙酯進行自由基妓聚人而成 樹脂。於該情形時，更佳為制2,4_甲苯：;氰 201145620 氰酸酯系交聯劑進行交聯β 此種樹脂被覆金屬粒子，例如可藉由於甲苯等溶劑中 杈入金屬粒子與矽烷偶合劑，於室溫下攪拌約1小時後， 投入自由基單體、自由基聚合起始劑與視需要之交聯劑， 面力”，、至自由基聚合起始溫度一面揽拌而製造。 以上所說明之光反射性絕緣粒子3e於光反射性異向性 導電接著劑中之摻合量，若過少則難以實現充分之光反 射又右過夕則會阻礙基於所併用之導電粒子之連接， 因此於熱硬化性樹脂組成物中，較佳為Μ。體積％，更佳 為2〜25體積％，再更佳為3〜2〇體積％。 構成本發明中所使用之光反射性異向性導電接著劑3 之導電粒子3b，可利用異向性導電連接用之先前之導電粒 子所使用之金屬粒子。例如可列舉金、錄、銅、銀、錫、 鈀紹、δ亥等之合金、該等之多層化物（例如_/閃炼 ^金物）f纟中’金、錦' 銅由於會使導電粒子成為褐 果故而可較其他之金屬材料更加有效地利用本發明之效 又，導電粒子可使用利用金屬材料被覆樹脂粒子而成 之金屬被覆樹脂粒子。此種樹脂粒子可列舉笨乙稀系樹脂 '=子、苯胍口井樹脂粒子、尼龍樹脂粒子等。利用金屬材料被 ㈣㈣子之方法亦可採用先前公知之方法，可利用益電 :敷法'電解錄敷法等…所被覆之金屬材料之層厚係 足以確保良好之連接可靠性之厚度，其雖取決於樹脂粒子 之粒杈或金屬之種類，但通常為〇.丨〜3 β m。 10 201145620 又’若樹脂粒子之粒徑過小，則有發生導通不良之傾 向右過大則有發生圖案間短路之傾向，因而較佳為！〜2〇 &quot;in’更佳為3〜l〇#m，尤佳為3〜5”。於該情形時， 核“立子1之形狀較佳為球形，亦可為薄片狀、橄欖球狀。 較佳之金屬被覆樹脂粒子為球狀形狀，若其粒徑過 大，則連接可靠性會降低，因此較佳為，更佳為 3 〜10 e m。 於本發明中’較佳為使用如上述之對粒子賦予光反射 性而成之光反射性導電粒子作為導電粒子。圖2a及圖Μ 係此種光反射性導電粒+ 2⑻及多層化光反射性導電粒子 之幻面圖。首先，自圖2A之光反射性導電粒子開始說 明。 光反射性導電粒子200係由利用金屬材料被覆之核心 粒子21、與其表面之光反射層23所構成，該光反射層23 係由選自氧化鈦（Tl〇2)粒子、氧化鋅（Zn〇)粒子或氧化 鋁（A1203 )粒子中之至少一種無機粒子22所形成。氧化鈦 /卡子氧化辞粒子或氧化鋁粒子係於太陽光下呈現白色之 無機粒子。因此，由該等所形成之光反射層23呈現白色〜 灰色。呈現白色〜灰色表示對可見光之反射特性之波長依 賴性較小，且易反射可見光。 再者，於氧化鈦粒子、氧化鋅粒子或氧化鋁粒子中， 於擔憂硬化之異向性導電接著劑之熱硬化性樹脂組成物之 硬化物之光劣化之情形日夺’較佳為使用冑光劣化無觸媒性 且折射率較高之氧化鋅。 201145620 由於核心粒子21係供於異向性導電連接者，故而其表 面由金屬材料所構成。此處，表面由金屬材料所被覆之型 態，如上述般可列舉上述核心粒子21本身為金屬材料之型 態、或者樹脂粒子之表面由金屬材料所被覆之型態。 就與核心粒子21之粒徑之相對大小之觀點而言，若由 無機粒子22所形成之光反射層23之層厚相對於核心粒子 21之粒徑過小，則反射率明顯降低，若過大則會發生導通 不良，因此較佳為0.5〜50〇/〇，更佳為i — 。 又，於光反射性導電粒子200中，若構成光反射層23 之無機粒子22之粒徑過小’則有難以產生光反射現象之傾 向’若過大則有光反射層之形成變難之傾向，因此較佳為 〇.02〜“m，更佳為0.1〜^爪，尤佳為0.2〜〇“m。於 該情形時，就被反射之光的波長之觀點而言， 被反射之光（即發光元件發出之光）發生透射 為了避免應 ，無機粒子 22之粒徑較佳為該光之波長之鄕以上。於該情形時，盔 機粒子22之形狀’可列舉無固定形狀 '球狀、鱗片狀、針 狀等，其中就光擴散效果之觀點而言較佳為球狀，就全反 射效果之觀點而言較佳為鱗片狀。 圖2A之光反射性導電粒+ 200可藉由公知成膜技術 (即機械融合法）而製造，該技術係：藉由使大小之粉末 彼此發生物理性碰撞，而於大粒徑粒子之矣 〜衣艰成由小粒 徑粒子所構成之膜。於該情形時，無機粒子22係以沒入核 心粒子21之表面之金屬材料之方式固定，另一 乃 万面，由於 無機粒子彼此難以熔接固定’故而無機粒子之單層構成光 12 201145620 反射層23。因此，於圖2八之情形時，認為光反射層^之 層厚等於或者小於無機粒子22之粒徑。 -人，對圖2B之多層化光反射性導電粒子3〇〇進行說 明。於該多層化光反射性導電粒子300中，光反射層23含 有作為接著劑而發揮功能之熱塑性樹脂24，無機粒子η彼 此亦由該熱塑性樹脂24固定，就無機粒子22之多層化（例 如多層化為2層或3層）之觀點而言，與圖2a之光反射性 導電粒子200不同。藉由含有此種熱塑性樹脂24，可提高 光反射層23之機械強度，變得不易發生無機粒子之剝落等。 熱塑性樹脂24，為了實現低環境負擔，可較佳地使用 無鹵素之熱塑性樹脂，例如可較佳地使用聚乙烯、聚丙烯 41稀煙，或聚苯乙稀、丙稀酸樹脂等。 此種多層化光反射性導電粒子3〇〇亦可藉由機械融合 法而製造。若用於機械融合法之熱塑性樹月旨24之粒徑過 小’則接著功能降低’若過大則變得難精著於核心粒子， 因此較佳為0.02〜4μιη，更佳為〇 μ _。又若此種 熱塑性樹脂24之摻合量過少’則接著功能降低，若過多則 會形成粒子之凝聚體，因此相騎_質量份之無機粒子 22，較佳為〇·2〜500質量份，更佳為4〜25質量份❶ 又’構成本發明所使用之光反射性異向性導電接著劑3 之熱硬化性樹脂組成物3a’較佳為儘可能使用無色透明 者。其原因在於：$會使異向性導電接著劑中之光反射性 絕緣粒子等之光反射效率降低，且不會替換入射光之光色 而使之反射。此處’所謂無色透明’仙異向料電接著 13 201145620 劑之硬化物對波長為谓〜78Gnm之可見光之光程長度_ 之光穿透率（依據JIS κ測定）為贈。以上 90%以上。 权1玄两 於本發明所使用之光反射性異向性導電接著劑3中， 子⑪相對於⑽質量份熱硬純樹脂組成物3a 生過少’則有發生導通不良之傾向，若過多則有產 圖^短路之傾向，因此較佳為！〜⑽質量份，更佳為 〜5〇質ϊ份，再更佳為10〜3〇質量份。 構成本發明所使用之光反射性異向性導電接著劑3之 熱硬化性樹脂組成物3a，可利 之異向性導電接著劑 二、: 財所使用者。-般而言，此種熱硬化性樹 物係於絕緣性黏合樹脂摻合硬化劑而成。絕緣性黏 佳可列舉以脂環式環氧化合物、雜環系環氧化 5物及线環氧化合物等作為主成分之環氧系樹脂。 脂環式環氧化合物，較佳可 iS « « ^ 羋刀千内具有2個以上 %氧基者。該等可為液狀， j j為固蓝狀。具體而言，可 列舉六虱雙酚A環氧丙基醚、 ，4 J衣氧％己烯羧酸3，，4，~ %氧環己烯基甲酯等。其中，An insulating resin. As the A π mechanism rfrj g such as mechanical strength or transparency, a cured product of an acrylic resin can be preferably used. Preferably, it is a resin obtained by radically polymerizing ruthenium methacrylate and 2-hydroxyethyl methacrylate in the presence of a radical initiator such as peroxy peroxide. In this case, it is more preferred to produce 2,4_toluene:; cyanide 201145620 cyanate ester crosslinking agent to crosslink β such resin coated metal particles, for example, by incorporation of metal particles and decane in a solvent such as toluene The coupling agent is stirred at room temperature for about 1 hour, and then a free radical monomer, a radical polymerization initiator, and optionally a crosslinking agent are added, and the surface power is added to the radical polymerization initiation temperature. When the amount of the light-reflective insulating particles 3e described above in the light-reflective anisotropic conductive adhesive is too small, it is difficult to achieve sufficient light reflection, and right-handedness hinders the conductive particles based on the combination. In the thermosetting resin composition, it is preferably Μ. % by volume, more preferably 2 to 25% by volume, still more preferably 3 to 2 % by volume. constituting the light reflectance used in the present invention The conductive particles 3b of the anisotropic conductive adhesive 3 can be made of metal particles used for the prior conductive particles for the anisotropic conductive connection, and examples thereof include gold, nickel, silver, tin, palladium, δ, and the like. Alloy, such multi-layered compound For example, _/flashing ^ gold material) f 纟 'gold, brocade' copper can make the conductive particles become brown fruit, so it can use the effect of the invention more effectively than other metal materials, conductive particles can be covered with metal materials The metal particles coated with the resin particles are coated with resin particles. Examples of such resin particles include a stupid ethylene resin, a benzophenone resin particle, a nylon resin particle, etc. The metal material may be previously known by the method of (4) (4). In the method, the thickness of the metal material coated by the method of electrolysis: electrolytic coating, etc. can be used to ensure a good connection reliability thickness, which depends on the type of the resin particles or the type of metal. However, it is usually 〇.丨~3 β m. 10 201145620 Further, if the particle size of the resin particles is too small, there is a tendency that conduction failure occurs. If the diameter is too large, there is a tendency for a short circuit between the patterns. Therefore, it is preferable to be ~2〇&quot ;in' is better for 3~l〇#m, especially good for 3~5". In this case, the shape of the core "the pillar 1 is preferably spherical, and may be in the form of flakes or rugby. The preferred metal-coated resin particles have a spherical shape. If the particle diameter is too large, the connection reliability is lowered. More preferably, it is preferably 3 to 10 em. In the present invention, it is preferred to use light-reflective conductive particles which impart light reflectivity to the particles as described above as conductive particles. Fig. 2a and Fig. A spectroscopy diagram of the light-reflective conductive particles + 2 (8) and the multilayered light-reflective conductive particles. First, the light-reflective conductive particles of Fig. 2A will be described. The light-reflective conductive particles 200 are core particles 21 coated with a metal material. The light reflecting layer 23 is composed of at least one inorganic particle 22 selected from the group consisting of titanium oxide (Tl〇2) particles, zinc oxide (Zn〇) particles, or alumina (A1203) particles. The titanium oxide/kappa oxidized particles or the alumina particles are white inorganic particles under sunlight. Therefore, the light-reflecting layer 23 formed by the light-appearing layer 23 is white to gray. The wavelength dependence of the reflection characteristic of visible light is small, and the visible light is easily reflected. Further, in the titanium oxide particles, the zinc oxide particles or the aluminum oxide particles, the thermosetting resin composition of the anisotropic conductive adhesive which is hard to be cured is formed. The photo-deterioration of the cured material is preferably 'the use of zinc oxide which has no photocatalytic degradation and high refractive index. 201145620 Since the core particles 21 are provided for the anisotropic conductive connection, the surface thereof Here, the surface is covered with a metal material, and as described above, the core particle 21 itself may be in the form of a metal material or the surface of the resin particle may be covered with a metal material. From the viewpoint of the relative size of the particle diameter of the core particles 21, if the layer thickness of the light reflection layer 23 formed of the inorganic particles 22 is too small with respect to the particle diameter of the core particles 21, the reflectance is remarkably lowered, and if it is too large, In the light-reflective conductive particle 200, the inorganic particles 22 constituting the light-reflecting layer 23 are preferably in the range of 0.5 to 50 Å/〇, more preferably i. If the particle size is too small, there is a tendency that light reflection phenomenon is hard to occur. If the light reflection layer is too large, the formation of the light reflection layer tends to be difficult. Therefore, it is preferably 〇.02 to "m, more preferably 0.1 to ^ claw, and particularly preferably 0.2 to 〇 "m. In this case, the reflected light (i.e., the light emitted from the light-emitting element) is transmitted from the viewpoint of the wavelength of the reflected light. To avoid the problem, the particle diameter of the inorganic particles 22 is preferably In this case, the shape of the helmet particles 22 may be a spherical shape, a scale shape, a needle shape or the like without a fixed shape, and a spherical shape is preferable from the viewpoint of light diffusion effect. It is preferably scaly in view of the total reflection effect. The light-reflective conductive particle + 200 of Fig. 2A can be produced by a known film forming technique (i.e., mechanical fusion method) by making the size The powders physically collide with each other, and the particles of the large-sized particles are difficult to form a film composed of small-sized particles. In this case, the inorganic particles 22 are fixed in such a manner as to be immersed in the metal material on the surface of the core particle 21, and the other is in the surface, since the inorganic particles are difficult to be welded and fixed to each other, the single layer of the inorganic particles constitutes the light 12 201145620 twenty three. Therefore, in the case of Fig. 2, it is considered that the layer thickness of the light-reflecting layer is equal to or smaller than the particle diameter of the inorganic particles 22. - Person, the multilayered light-reflective conductive particles 3A of Fig. 2B will be described. In the multilayered light-reflective conductive particles 300, the light-reflecting layer 23 contains a thermoplastic resin 24 that functions as an adhesive, and the inorganic particles η are also fixed by the thermoplastic resin 24, and the inorganic particles 22 are multilayered (for example, multiple layers). From the viewpoint of the formation of two or three layers, it is different from the light-reflective conductive particles 200 of Fig. 2a. By including such a thermoplastic resin 24, the mechanical strength of the light-reflecting layer 23 can be improved, and peeling of the inorganic particles or the like is less likely to occur. The thermoplastic resin 24 is preferably a halogen-free thermoplastic resin in order to achieve a low environmental burden. For example, polyethylene, polypropylene 41, or polystyrene, acrylic resin or the like can be preferably used. Such multilayered light-reflective conductive particles 3 can also be produced by a mechanical fusion method. If the particle size of the thermoplastic resin used in the mechanical fusion method is too small, then the function is lowered. If it is too large, it becomes difficult to concentrate on the core particles. Therefore, it is preferably 0.02 to 4 μm, more preferably 〇 μ _. Further, if the blending amount of the thermoplastic resin 24 is too small, the function is lowered, and if it is too large, aggregates of particles are formed. Therefore, the inorganic particles 22 of the mass fraction are preferably 〜 2 to 500 parts by mass. More preferably, it is 4 to 25 parts by mass. Further, the thermosetting resin composition 3a' constituting the light-reflective anisotropic conductive adhesive 3 used in the present invention is preferably colorless and transparent as much as possible. The reason for this is that the light reflection efficiency of the light-reflective insulating particles or the like in the anisotropic conductive adhesive is lowered, and the light color of the incident light is not replaced and reflected. Here, the so-called "colorless transparent" sinusoidal material is then supplied to the cured product of the light of the optical path length _ wavelength of ~78 Gnm (measured according to JIS κ). More than 90%. In the light-reflective anisotropic conductive adhesive 3 used in the present invention, when the sub- 11 is too small with respect to (10) parts by mass of the thermosetting pure resin composition 3a, there is a tendency that conduction failure occurs, and if too much, There is a tendency to produce a short circuit, so it is better! ~ (10) parts by mass, more preferably ~ 5 〇 mass parts, and even more preferably 10 to 3 parts by mass. The thermosetting resin composition 3a constituting the light-reflective anisotropic conductive adhesive 3 used in the present invention can be used as an anisotropic conductive adhesive. In general, such a thermosetting tree is formed by blending an insulating adhesive resin with a curing agent. The insulating adhesive is preferably an epoxy resin containing a alicyclic epoxy compound, a heterocyclic epoxidized product, and a linear epoxy compound as a main component. The alicyclic epoxy compound is preferably iS « « ^ There are more than 2 % oxygen in the knives. These may be liquid, and j j is solid blue. Specific examples thereof include hexamethylene bisphenol A glycidyl propyl ether, 4 J oxo% hexene carboxylic acid 3, 4, ~ oxycyclohexenyl methyl ester, and the like. among them,

一丄 T 就可使硬化物確保適合LED 兀件之構裝等的光穿透性且球麻几u + _ . 迷硬化性亦優異之觀點而言， 可較佳地使用六氫雙酴Α環轰茁且 氧丙基醚、3,4一環氧環己烯羧 I 3，4 一環氧環己烯基甲酯。 雜環系環氧化合物，可列無 以或… 具有三畊環之環氧化合物， 為1，3,5一二(2,3一環氧丙基卜… (1H，3H，5H)三酮。 斤，，〇 14 201145620 氣化％氧化合物’可使用上 雜環系環氧化合物之氣化物、或^之月“衣式環氧化合物或 脂環式環氧化八你 5 Α知之氫化環氧樹脂。 合物等可單獨使用，亦可合物及氫化環氧化 氧化合物以外，只要無損本發明之效果：：；除了該等環 氧化合物。例如可列舉:使雙“、二；可:用其他環 基雙齡Α、二芳基—二齡、=、雙…、四甲 曱酚、四淳雔舱Δ +⑽鄰本-酚、間苯二酚、 又酚A、三羥基聯苯、二苯甲酮、雙門贫_祕 酚六氟丙酮、四甲基雙酚A、四甲基雙酚卜二; 清漆、甲= 醇：醇：生反應而獲得之環氧丙基峻；使甘油、新戊二 一醇、丙二醇、丁二醇、己二醇、 =等脂肪族多元醇與表氣醇發生反應而獲得：:環= ==使對經基苯甲酸、卜羥基蔡甲酸之類之經基幾酸 虱醇發生反應而獲得之環氧丙基醚；-，、甲基鄰笨二甲酸、間苯二甲酸、對苯二甲酸鄰= :一I酸、内亞甲基四氫鄰苯二甲酸、内亞甲基六氫鄰苯 曱8文、偏苯三甲酸、聚脂肪酸之類的多羧酸所獲得之聚 %氧丙基酯；由胺基苯酚、胺烷基苯酚獲得之環氧丙基胺 續氧丙基峻；由胺基苯曱酸所獲得之環氧丙基胺環氧丙基 由本胺、.曱苯胺、二〉臭苯胺、苯二曱胺、二胺基環已 燒、雙胺基甲基環已烷、4,4, 一二胺基二苯基曱烷、4,4,_ 一胺基二苯基砜等所獲得之環氧丙基胺；環氧化聚烯烴等 公知之環氧樹脂類。 15 201145620 硬化劑，可列舉酸酐系硬化劑、咪唑化 α物系硬化劑、 二氰基系硬化劑、二蒽系硬化劑等。t中，·^ ，、γ可較佳地使用 不易使硬化物變色之酸酐系硬化劑，尤装θ w 升疋月曰環式酸酐系 硬化劑。具體而言，可較佳地列舉甲篡山裔抑— 〒&amp;,、虱鄰笨二甲酸肝 等。 於本發明所使用之光反射性異向性導電接著劑3之熱 硬化性樹脂組成物3a中，於使用脂環式環氧化合物與脂環 式酸酐系硬化劑之情形時，若脂環式酸酐系硬化劑過 有未硬化環氧化合物增多之傾向’若過多則有於剩餘之硬 化劑之影響下促進被黏附體材料之腐蝕之傾向，因此各自 之使用量相對於脂環式環氧化合物100質量份，較佳為8〇 〜120質量份，更佳為95〜105質量份。 (酸酐當量/環 卜若為該範圍， 環氧系樹脂與酸酐系硬化劑之當量比 氧當量）較佳為0.85〜1.2，更佳為〇.9〜1. 則可實現良好之而ί熱光特性。 於光反射性異向性導電接著劑3中，為了提高财熱光 特性可相對於環氧系樹脂與酸針系硬化劑之合計1 〇 〇質 量份，摻合較佳為0.1〜5質量份，更佳為〇 5〜3質量份之 比例之DBU (二氮雙雜環）_對甲苯磺酸鹽、四級銨鹽、 有機膦類等硬化促進劑。 進而’於光反射性異向性導電接著劑3中，可摻合一 次抗氧化劑（補充劣化過程中所生成之過氧化自由基（r〇〇 &lt;)之自由基鏈抑制劑，例如酚系抗老化劑或胺系抗老化 齊J )或一-人彳几氧化劑（補充不穩定之過氧化物（r〇〇H )， 16 201145620 積極地分解並轉化為穩定之化a 如硫系抗氧化劑、㈣抗氧化；氧化物分解劑’例 於環氧系樹脂與酸肝系硬化劑 老化劑。可相對 於光反射性異向性導電接著上二之比例進行換合。 紫外線吸收劑、偶合劑、難燃劑:二視㈣ :發：所使用之光反射性異向性導電接著齊&quot;可藉由 均句地混。熱硬化性樹脂組成物3a、f電粒子 性絕緣粒子3⑺製造。又，於歧射性異向 2 狀形態之情料，將該等與甲苯等溶劑—同分散混合= 所需厚度塗佈於經剝離處理之PET膜，於約_左右之溫 度下進行乾燥即可。 里 胃上所說明之光反射性異向性導電接著劑之反射 特性’為了提高發光元件之發光效率，遍及光反射性異向 性導電接著#1之硬化物之波長_〜78Qnm之全域，其分光 反。射率（根據m K71〇5測定）較佳為30%以上，更佳為 50%以上’更佳為8()%以上於簡便地評價反射特性之情形 時丄對波長為450nm之光之分光反射率（根據JIS K7105 、、'！定）k佳為30%以上’更佳為5Q%以上，再更佳為8〇% 乂上為了成為如上述之分光反射率，可適當調整所使用 之光反射性絕緣粒子等之反射特性、摻合量或熱硬化性樹 二成物之彳參合組成等即可。通常，若增加反射特性良好 光反射丨生絕緣粒子等之摻合量，則有反射率亦増大之傾 向。 17 201145620 又，亦可就折射率之觀點評價光反射性異向性導電接 著劑之反射特性。即，若該硬化物之折射率大於除導電粒 子與光反射性絕緣粒子以外之熱硬化性樹脂組成物之硬化 物之折射率，則於光反射性絕緣粒子與圍繞其之熱硬化性 樹脂組成物之硬化物之界面處之光反射量增加。具體而 吕，較佳為光反射性絕緣粒子之折射率（根據JIS K7丨42測 定）大於熱硬化性樹脂組成物之硬化物之折射率（根據jis K7142測定），更佳為兩者之差為〇 〇2以上，再更佳為〇 2 以上。再者，通常以環氧樹脂作為主體之熱硬化性樹脂組 成物之折射率約為1.5。 &lt;步驟（B) &gt; 步驟（A)之後，係對配線板，對發光元件進行加熱加 壓’藉此進行異向性導電連接。具體而言，如圖1B所示， 於可抵壓發光元件1之位置，構裝用於加熱加壓之彈性壓 頭4，如圖1C所示，視需要經由保護膜（未圖示），將發光 元件1抵壓至配線板2，而加熱加壓彈性壓頭4之抵壓面 4a。藉此，可使光反射性異向性導電接著劑3流動後使其硬 化，而將發光元件1異向性導電連接於配線板2上，可獲 得圖1D所示之發光裝置100。於該發光裝置1〇〇中，發2 元件1所發出之光中，朝配線板2側發出之光被光反射性 異向性導電接著劑之硬化物3,中之光反射性絕緣粒子“反 射，並自發光裝置100之上面射出。因此，可防止發光效 率之降低。 &quot; 該步驟中所使用之彈性壓頭4由於在異向性導電連接 18 201145620 時會發生變形，故而可消除異向性導電連接部之凹凸，實 現抵壓之面内均勻性。因此，於本申請案發明之製造方法 中，藉由使用彈性壓頭4,於將複數個發光元件異向性導電 連接於配線板而製造發光裝置之情形時，亦可消除該等連 接用電極之形狀或厚度之差異、尺寸誤差，且可於㈣板 一併地異向性導電連接複數個發光元件。又，亦可加熱抵 壓自發光元件1與配線2之間滲出之由光反射性異向性 導電接著劑3所形成之填角(fiUet”p 3d，使之充分硬化， 亦可提高發光元件1之密接性。 以上、未達90，較佳為65以上 若蕭氏A橡膠硬度未達4〇，則 有初始電阻及連接可靠性降低4 尤其於本發明中，彈性壓頭4，較佳為使用其抵壓面 4a之硬度為蕭氏a橡膠硬度（jis κ6253 ( $〜Μ。。））仰 、80以下者。其原因在於：A T can be used to ensure that the cured product is suitable for the light penetration of the LED component, and the urethane is excellent. Ring oxime and oxypropyl ether, 3,4-epoxycyclohexenecarboxyl 3,4-epoxycyclohexenylmethyl ester. A heterocyclic epoxy compound which can be listed as an epoxy compound having a three-till ring, which is 1,3,5-two (2,3-epoxypropyl b... (1H, 3H, 5H) triketone斤,,〇14 201145620 Gasification % Oxygen Compound' can be used as a vaporization of a heterocyclic epoxy compound, or as a "clothing epoxy compound or an alicyclic epoxidized The resin or the like may be used singly or in addition to the hydrogenated epoxidized oxygen compound, as long as the effects of the present invention are not impaired:: In addition to the epoxy compounds, for example, a double ", two; Other ring-based sorghum, diaryl-second age, =, double..., tetramethyl phenol, tetraterpene Δ + (10) o-benzo, resorcinol, phenol A, trihydroxybiphenyl, Benzophenone, double-door lean _ phenol hexafluoroacetone, tetramethyl bisphenol A, tetramethyl bisphenol phthalate; varnish, a = alcohol: alcohol: epoxy propyl sulphate obtained by the reaction; Glycerol, neopentyl alcohol, propylene glycol, butanediol, hexanediol, = and other aliphatic polyols are reacted with surface gas alcohol to obtain: ring === pair of p-benzoic acid, a epoxidized propyl ether obtained by reacting a hydroxycaproic acid with a quinone sterol; -, methyl o-dibenzoic acid, isophthalic acid, terephthalic acid o-: :-I acid, internal a poly% oxypropyl ester obtained from a polycarboxylic acid such as methylenetetrahydrophthalic acid, endomethylene hexahydrophthalic acid, trimellitic acid or poly-fatty acid; Ethoxypropylamine obtained from aminoalkylphenols; oxypropylamine; epoxypropylamine epoxypropyl obtained from aminobenzoic acid from amine, anthranil, bis-aniline, benzoquinone An epoxy obtained by an amine, a diamine ring calcined, a bisaminomethylcyclohexane, a 4,4, a diaminodiphenyl decane, a 4,4,-aminodiphenyl sulfone or the like A known epoxy resin such as propylamine or epoxidized polyolefin. 15 201145620 Examples of the curing agent include an acid anhydride-based curing agent, an imidazole-based α-based curing agent, a dicyano-based curing agent, and a dioxen-based curing agent. In the case of t, ?, and γ, an acid anhydride-based curing agent which is less likely to cause discoloration of the cured product is preferably used, and in particular, a θ w 疋 疋 曰 曰 cyclic carboxylic acid-based curing agent is preferably used. In the thermosetting resin composition 3a of the light-reflective anisotropic conductive adhesive 3 used in the present invention, an alicyclic ring is used in the case of the heat-reducing resin composition 3a of the light-reflective anisotropic conductive adhesive 3 used in the present invention. In the case of the epoxy compound and the alicyclic acid anhydride-based curing agent, if the alicyclic acid-based curing agent has an excessive tendency to increase the amount of the uncured epoxy compound, if it is too large, the adhesion is promoted under the influence of the remaining curing agent. The tendency of the bulk material to be corroded is therefore preferably from 8 to 120 parts by mass, more preferably from 95 to 105 parts by mass, based on 100 parts by mass of the alicyclic epoxy compound. (Acidate equivalent/ring In this range, the equivalent ratio of the epoxy resin to the acid anhydride-based curing agent is preferably from 0.85 to 1.2, more preferably 〇.9 to 1. Further, good thermo-light characteristics can be achieved. In the light-reflective anisotropic conductive adhesive 3, it is preferable to blend 0.1 to 5 parts by mass with respect to 1 part by mass of the total of the epoxy resin and the acid needle-based curing agent in order to improve the thermal light characteristics. More preferably, it is a hardening accelerator such as DBU (diazabicyclohetero)_p-toluenesulfonate, quaternary ammonium salt or organic phosphine in a ratio of 5 to 3 parts by mass. Further, in the light-reflective anisotropic conductive adhesive 3, a primary antioxidant (a radical chain inhibitor which supplements a peroxide radical (r〇〇&lt;) generated during the deterioration process, for example, a phenol system, may be blended. Anti-aging agent or amine anti-aging compound J) or one-human anti-oxidant (replenishing unstable peroxide (r〇〇H), 16 201145620 actively decomposes and converts into stable a, such as sulfur-based antioxidant (4) Antioxidant; Oxide decomposing agent' is exemplified by epoxy resin and acid liver hardener aging agent, which can be exchanged with respect to the ratio of light-reflective anisotropic conduction and then the second. UV absorber, coupling agent , flame retardant: two-view (four): hair: the light-reflective anisotropic conductive used in the following can be produced by uniformly mixing the thermosetting resin composition 3a, f electro-particle insulating particles 3 (7). Further, in the case of a disproportionate two-dimensional form, the solvent is mixed with a solvent such as toluene, and the desired thickness is applied to the peeled PET film, and dried at a temperature of about _ The light-reflective anisotropic guide described in the stomach The reflection property of the subsequent agent 'in order to improve the luminous efficiency of the light-emitting element, the wavelength of the cured product of the light-reflective anisotropic conductive material #1 is _~78Qnm, and the spectral reflectance (measured according to m K71〇5) It is preferably 30% or more, more preferably 50% or more, more preferably 8 (%) or more, in the case of simply evaluating the reflection characteristics, the spectral reflectance of light having a wavelength of 450 nm (according to JIS K7105, '! The k is preferably 30% or more, more preferably 5% or more, and even more preferably 8% by weight. In order to achieve the spectral reflectance as described above, the reflection characteristics of the light-reflective insulating particles to be used, etc., can be appropriately adjusted. The amount of blending or the composition of the thermosetting tree may not be sufficient. In general, when the blending amount of the light-reflecting insulating particles or the like is increased, the reflectance is also large. 17 201145620 The reflection property of the light-reflective anisotropic conductive adhesive may be evaluated from the viewpoint of the refractive index, that is, if the refractive index of the cured product is larger than the thermosetting resin composition other than the conductive particles and the light-reflective insulating particles. Folding of hardened material The rate of light reflection at the interface between the light-reflective insulating particles and the cured product of the thermosetting resin composition surrounding the film is increased. Specifically, the refractive index of the light-reflective insulating particles is preferably (according to JIS K7) The measurement of 丨42 is greater than the refractive index of the cured product of the thermosetting resin composition (measured according to jis K7142), and more preferably the difference between the two is 〇〇2 or more, and more preferably 〇2 or more. The refractive index of the thermosetting resin composition containing the epoxy resin as a main component is about 1.5. &lt;Step (B) &gt; After the step (A), the wiring board is heated and pressurized by the light-emitting element. In particular, as shown in FIG. 1B, at a position where the light-emitting element 1 can be pressed, an elastic ram 4 for heating and pressurizing is constructed, as shown in FIG. 1C, via a protective film as needed ( Not shown), the light-emitting element 1 is pressed against the wiring board 2, and the pressing surface 4a of the elastic elastic head 4 is heated and pressed. Thereby, the light-reflective anisotropic conductive adhesive 3 can be made to flow and then hardened, and the light-emitting element 1 can be anisotropically electrically connected to the wiring board 2, whereby the light-emitting device 100 shown in Fig. 1D can be obtained. In the light-emitting device 1A, among the light emitted by the element 2, the light emitted toward the wiring board 2 is light-reflective insulating particles of the light-reflective anisotropic conductive adhesive. The reflection is emitted from the upper surface of the light-emitting device 100. Therefore, the reduction in luminous efficiency can be prevented. &quot; The elastic indenter 4 used in this step is deformed due to the anisotropic conductive connection 18 201145620, thereby eliminating the difference In the in-plane uniformity of the resistive contact portion, the in-plane uniformity of the pressing is achieved. Therefore, in the manufacturing method of the invention of the present application, the plurality of light-emitting elements are anisotropically electrically connected to the wiring by using the elastic indenter 4. When the light-emitting device is manufactured by using a plate, the difference in shape or thickness of the connecting electrodes and the dimensional error can be eliminated, and a plurality of light-emitting elements can be electrically connected to the (four) plates in an anisotropic manner. The fillet (fiUet" p 3d formed by the light-reflective anisotropic conductive adhesive 3 oozing between the light-emitting element 1 and the wiring 2 is sufficiently cured, and the adhesion of the light-emitting element 1 can be improved. If it is less than 90, preferably 65 or more, if the hardness of the Shore A rubber is less than 4, the initial resistance and the connection reliability are lowered. 4 In particular, in the present invention, the elastic indenter 4 is preferably used. The hardness of 4a is the hardness of the Shore A rubber (jis κ6253 ($~Μ..)), which is less than 80. The reason is:

加熱器（未圖示） 1 4如圖1B所示，通常利用内置有加熱用 之不鏽鋼等之金屬壓頭基座5進行支撐。 19 201145620 彈性m頭4之抵壓面4a之大小較佳為設為抵壓時可抵壓先 反射性異向性導電接著劑之填角部之程度，該光反射性異 向性導電接著劑係自發光元件1與配線板2之間滲出。又， 彈拴壓碩4之厚度較佳為至少與發光元件1之最大厚度相 同或更高。 再者，為了提高連接可靠性，異向性導電連接時之加 熱各度較佳為以使光反射性異向性導電接著劑3之溶融黏 度成為較佳範圍之方式加熱光反射性異向性導電接著劑 具體而δ，於光反射性異向性導電接著劑之熔融黏度未 達l.OxioWm清形日夺，有加熱加壓時之黏合樹脂之流 較大，產生空隙而使初始電阻及連接可靠性變差之傾 ^於^料度大M.〇x1G5mPa.s之情形時，有於加熱加 ^連接用電極部分未完全去除黏合樹脂，產生空隙而使 阻及連接可靠性變差之傾向’因此較佳為以光反射 生異向5性導電接著齊&quot;之炫融黏度成為較佳為ι 〇χΐ〇2〜 /1〇mPa.S、更佳為 仃加熱。 、乃式進 之，=:如上述之熔融黏度，彈性壓…表面溫度 射性異向性導電接著劑3之組成“適 進仃’例如以彈性壓頭4之抵壓面4 〜35CTC之方*准—ΛI衣面，皿度成為50 之方式進仃加熱。於該情形時， 周圍之填角邱☆八u^ 就對發先tl件丨之 真角。Ρ充为地加熱而確實地防止 言，較佳Αt Γ· 4· 座生工隙的觀點而 較佳為於加熱加壓時’自配線 度高於發光元件i之方式心…側以配線板2之溫 式進灯加熱。例如較佳為-面以彈 20 201145620 性壓頭4之抵壓面4&amp;之表 讲士勒 又取马10〇c左右之方式進 :-面自配線板2側以光反射性異向性導電性接著 劑3之溫度成為2(Hrc左右之方式進行加献。 卜又佳異向性導電連接時之壓力較佳為對每個發光元件 為2〜5咖左右之壓力加壓10〜60秒左右。 &lt;步驟（c ) &gt; 如圖1D所示，亦可對步驟⑻中所獲得之發光裝置 透明密^1E所示，以覆蓋整個發光元件1之方式，使用 月被封_ 6進行密封。藉此成為耐久性 置110。該透明密封樹脂6，只要為可用於發光元件= “、封的-般樹脂，則無特別限定，例如就硬化物之黏著 ’，：隨時間經過之劣化較少、硬化時間較短等觀點而 。，可較佳地使用矽系或丙烯酸系之透明密封樹脂。 —又樹月曰密封之方法亦只要為可用⑤發光元件之樹脂 密封的-般方法’則無特別限定，例如可列舉澆鑄法、灌 庄法、成型法、印刷法等方法，較佳為灌注法。 實施例 以下，列舉實施例及比較例，更具體地說明本發明。 實施例1 (光反射性異向性導電接著劑之製備） 於下述熱硬化型環氧系異向性導電接著劑中，以成為 15體積％之方式摻合作為光反射性絕緣粒子之平均粒徑為 2l〇nm之二氧化矽粉末（Seah〇ster__ ΚΕ- Ε30，日本觸媒股 份有限公司）並混合均勻，藉此獲得外觀色為白色之糊狀 21 201145620 之光反射性異向性導電接著劑 ^ Φ „ 齊1该熱硬化型環氧系異向性 導電接者劑係由作為主劑之脂 月日環式每氧樹脂（ 2021P，Daicel 化學工業股份有限公司） # 質I伤、作為硬化劑之甲基六 虱鄰本一甲酸酐5 〇質量份 乍為導電粒子之平均粒徑為5 P之Au被覆樹脂導電粒子（對平均粒徑為Up之球 狀丙烯酸樹脂粒子實施厚度為〇.2心之無電鑛金之粒子 …咖則刪細，日本化學工㈣份有限公司）15質 d、有機膦系硬化促進劑（Tpp—Bf ’北興化學工業股份 有限公司）3 f量份、及磷系防著色劑（HCA，三光股份有 限公司）0.5質量份所構成。 (發光元件與配線板之異向性導電連接） 四使用ώ塊接合機（FB700，Kaij〇 Corpora)於玻璃 %氧樹脂配線板之連接用電極上形成高度為Η㈣之金凸 塊’該玻璃環氧樹脂配線板係具有對間距為ι〇—之銅配 線進行Ni/Au(厚度5.〇W厚度Ο—)鑛敷處理之特 定形狀之配線。於附有該金凸塊之破璃環氧樹脂配線板， 應用上述所獲得之光反射性異向性導電接著劑，於其上以 0.3賴見方配置2〇個厚度為〇」職之藍色led元件（最 大波長455nm，額定電流2〇mA，額定電壓3 %，使用具 有蕭氏A橡膠硬度（JIS K6253 ) “5之抵壓面之彈性壓 頭（長5〇腿&gt;&lt; 寬50mm，厚10mm)，於2耽（彈性壓頭抿 墨面溫度）、30秒、1N/ehip之條件下進行倒裝晶片構裝， 獲得LED模組作為發光裝置。 (透明樹脂密封） 22 201145620 使用加成硬化型甲基聚矽氧樹脂（KER25〇〇，信越化學 工業股份有限公司），藉由洗鑄法對上述獲得之發光裝置進 行樹脂密封，獲得經透明樹脂密封之發光裝置（LED模組）。 實施例2 使用15體積％之平均粒徑為225nm之氧化鋅粉末（1 種Jis規格氧化鋅，HakusuiTech股份有限公司）代替二氧 化石夕粉末作為光反射性絕緣粒子，除此以外，冑由與實施 例1相同之方式獲得外觀色為白色之糊狀之光反射性異向&amp; 性：電接著劑’進而使用該光反射性異向性導電接著劑， 獲得經透明樹脂密封之LED模組。 實施例3 使用15體積％之平均粒徑為21〇nm《二氧化欽粉末 (KR- 380，Titan Kogyo股份有限公司）代替二氧化石夕粉 末作為光反射性絕緣粒子，除此以外，藉由與實施例i相 同之方式獲得外觀色為白色之糊狀之光反射性異向性導電 ^者劑’ 使用該光反射性異向性導電接著劑，獲得經 透明樹脂密封之led模組。 貫施例4 使用15體積％之平均粒徑為190咖之二氧化欽粉末 -380，Tltan K〇gy。股份有限公司）代替二氧化石夕粉 反射性絕緣粒子，除此以外，藉由與實施例 垃芏物狀之先反射性異向性導電 妾者劑，進而使用該光反射性異 透明樹脂密封之LED模組。 ”接者劑，獲得經 23 201145620 實施例5 使用15體積％之平均粒徑為300nm之二氧化欽粉末 (KR— 380，Titan Kogyo股份有限公司）代替二氧化矽粉 末作為光反射性絕緣粒子，除此以外，藉由與實施例丨相 同之方式獲得外觀色為白色之糊狀之光反射性異向性導電 接著劑，進而使用該光反射性異向性導電接著劑，獲得經 透明樹脂密封之LED模組。 實施例6 使用5體積％之平均粒徑為以如爪之二氧化鈦粉末 — 380’ Titan Kogyo股份有限公司）代替二氧化矽粉末作為 光反射性絕緣粒子，除此以外，藉由與實施例丨相同之方 式獲得外觀色為白色之糊狀之光反射性異向性 ϋ導電接著 獲得經透明 劑，進而使用該光反射性異向性導電接著劑 樹脂密封之LED模組。 實施例7 同之方式獲得外觀色為白色之糊狀之光反射性異 接著劑，進而使用該光反射性異向性導電接著劑 透明樹脂密封之LED模組。 使用25體積％之平均粒徑為21〇nm之二氧化鈦粉末 (KR — 380, Titan Kogyo股份有限公司）代替二氧化矽粉 末作為光反射性絕緣粒子’除此以外，藉由與實施例1相 向性導電 ’獲得經 實施例8 使用15體積％之平均粒徑為21〇nm之二As shown in Fig. 1B, the heater (not shown) 14 is usually supported by a metal ram base 5 in which stainless steel or the like is incorporated. 19 201145620 The size of the pressing surface 4a of the elastic m-head 4 is preferably such a degree as to be able to withstand the fillet portion of the first reflective anisotropic conductive adhesive when pressed, the light-reflective anisotropic conductive adhesive It is oozing between the light-emitting element 1 and the wiring board 2. Further, the thickness of the magazine 4 is preferably at least the same as or higher than the maximum thickness of the light-emitting element 1. Further, in order to improve the connection reliability, it is preferable that the degree of heating in the anisotropic conductive connection is such that the light reflective anisotropy is heated so that the melt viscosity of the light-reflective anisotropic conductive adhesive 3 is in a preferable range. The conductive adhesive is specifically δ, and the melt viscosity of the light-reflective anisotropic conductive adhesive is less than 1. OxioWm, and the flow of the adhesive resin is large when heated and pressurized, and voids are generated to cause initial resistance and In the case where the connection reliability is deteriorated, when the material density is large, M. 〇 x1G5mPa.s, the electrode portion for heating and bonding is not completely removed, and voids are generated to deteriorate the connection reliability. It is preferred that it is preferably a light-reflecting, anisotropic, five-conducting, conductive, and viscous viscosity which is preferably ι 〇χΐ〇 2 〜1 〇 mPa. S, more preferably 仃 heating. In the above formula, =: the above-mentioned melt viscosity, elastic pressure, surface temperature, anisotropic conductive adhesive 3, the composition of the "adhesive", for example, the pressure of the elastic head 4, the surface of the pressure surface 4 ~ 35CTC *Quasi-ΛI clothing surface, the degree of the dish becomes 50. The heating angle is 50. In this case, the surrounding corner qiu ☆ 八u^ is the true angle of the first tl piece. For the sake of prevention, it is preferable to use the temperature of the wiring board 2 to heat the lamp when the temperature is higher than that of the light-emitting element i. For example, it is preferable that the surface of the surface of the pressure head 4 & the head of the pressure head 4 & the syllabus is taken in a manner of about 10 〇 c: - the surface is light-reflective anisotropy from the side of the wiring board 2 The temperature of the conductive adhesive 3 is increased by 2 (Hrc is added.) The pressure at the time of the anisotropic conductive connection is preferably a pressure of about 2 to 5 coffee per light-emitting element. [seconds] &lt;Step (c) &gt; As shown in Fig. 1D, the light-emitting device obtained in the step (8) can also be transparently shown to cover the entire The form of the light-emitting element 1 is sealed by using a seal _ 6 , and the durability is set to 110. The transparent sealing resin 6 is not particularly limited as long as it can be used for a light-emitting element = ", seal-like resin, for example. In view of the adhesion of the cured product, the deterioration of the hardened material is less, the hardening time is shorter, and the like, and the transparent sealing resin of the lanthanide or the acrylic type can be preferably used. The method of sealing a resin which can be used for a light-emitting element of 5 is not particularly limited, and examples thereof include a casting method, a potting method, a molding method, and a printing method, and a pouring method is preferred. Examples Hereinafter, examples and examples are given. In the comparative example, the present invention is more specifically described. Example 1 (Preparation of a light-reflective anisotropic conductive adhesive) In the following thermosetting epoxy-based anisotropic conductive adhesive, it is 15% by volume. The cerium oxide powder (Seah〇ster__ ΚΕ-Ε30, Nippon Shokubai Co., Ltd.) having an average particle diameter of 2 l 〇 nm which is a light-reflective insulating particle is blended and uniformly mixed, thereby obtaining a white appearance color. Paste 21 201145620 Light-reflective anisotropic conductive adhesive ^ Φ „ Qi 1 The thermosetting epoxy-based anisotropic conductive connector is made up of a lipid-moon-type peroxy resin as a main agent (2021P) , Daicel Chemical Industry Co., Ltd. # Quality I injury, methyl hexamethylene phthalate as a hardener 5 〇 mass parts 乍 is a conductive particle with an average particle size of 5 P Au coated resin conductive particles (on average The spheroidal acrylic resin particles having a particle size of Up are subjected to a particle having a thickness of 〇.2 heart-free mineral gold. The coffee is finely divided, and the Japanese chemical industry (four) Co., Ltd.) 15 mass d, an organic phosphine-based hardening accelerator (Tpp- Bf 'Beixing Chemical Industry Co., Ltd.' consists of 3 parts by volume and 0.5 parts by mass of phosphorus-based coloring inhibitor (HCA, Sanguang Co., Ltd.). (Anisotropic conductive connection between the light-emitting element and the wiring board) 4. A gold bump having a height of Η (4) is formed on the connection electrode of the glass-% oxygen resin wiring board by a 接合Block bonding machine (FB700, Kaij〇Corpora) The oxygen resin wiring board has a wiring having a specific shape of a Ni/Au (thickness: 〇W thickness Ο-) mineralization treatment on a copper wiring having a pitch of 〇. Applying the light-reflective anisotropic conductive adhesive obtained above to the broken epoxy epoxy wiring board with the gold bump, and arranging two thicknesses of 0.3 见Led component (maximum wavelength 455nm, rated current 2〇mA, rated voltage 3%, using elastic rubber head with Shore A rubber hardness (JIS K6253) “5 anti-pressure surface (long 5 〇 leg &gt;&lt; width 50mm , thickness 10mm), flip-chip assembly under conditions of 2耽 (elastic pressure head 抿 ink surface temperature), 30 seconds, 1N/ehip, and obtain LED module as a light-emitting device. (Transparent resin seal) 22 201145620 Use Addition-hardening type methyl polyoxynene resin (KER25〇〇, Shin-Etsu Chemical Co., Ltd.), resin-sealed the above-obtained light-emitting device by a washing method to obtain a transparent resin-sealed light-emitting device (LED module) Example 2 Using 15% by volume of zinc oxide powder (one type of Jis-type zinc oxide, Hakusui Tech Co., Ltd.) having an average particle diameter of 225 nm as a light-reflective insulating particle, in addition to 5% by volume, By and implementation In the same manner as in Example 1, a light-reflective anisotropic property of a white color was obtained in the same manner: an electric adhesive' was further used to obtain a transparent resin-sealed LED module using the light-reflective anisotropic conductive adhesive. Example 3 Using 15% by volume of an average particle diameter of 21 〇 nm "Secondary Oxide Powder (KR-380, Titan Kogyo Co., Ltd.) in place of the dioxide powder as light-reflective insulating particles, by In the same manner as in the example i, a light-reflective anisotropic conductive agent having a white appearance was obtained. Using the light-reflective anisotropic conductive adhesive, a transparent resin-sealed LED module was obtained. Example 4 using 15% by volume of an average particle diameter of 190 g of dioxin powder - 380, Tltan K〇gy Co., Ltd.) instead of the dioxide powder reflective insulating particles, in addition to For example, the first reflective anisotropic conductive enamel agent is used, and the LED module sealed with the light-reflective iso-transparent resin is used. 接接剂, obtained by 23 201145620 Example 5 using an average of 15% by volume Particle size is 3 A white paste was obtained in the same manner as in Example 除 except that 20,000 nm of dioxin powder (KR-380, Titan Kogyo Co., Ltd.) was used as the light-reflective insulating particle instead of the cerium oxide powder. The light-reflective anisotropic conductive adhesive further uses the light-reflective anisotropic conductive adhesive to obtain a transparent resin-sealed LED module. Example 6 The same as Example 使用 except that 5% by volume of the average particle diameter was used in place of the cerium oxide powder as the light-reflective insulating particles, such as titanium dioxide powder of the claws - 380' Titan Kogyo Co., Ltd.). In this manner, a light-reflective anisotropic conductive material having a white color of paste is obtained, and then an LED module which is sealed with a transparent agent and further sealed with the light-reflective anisotropic conductive adhesive resin is obtained. Example 7 In the same manner, a light-reflective dissimilar agent having a white color in the form of a paste was obtained, and an LED module in which the light-reflective anisotropic conductive adhesive was used for transparent resin sealing was further used. 25% by volume of titanium dioxide powder (KR-380, Titan Kogyo Co., Ltd.) having an average particle diameter of 21 Å was used instead of cerium oxide powder as light-reflective insulating particles, except for the orientation with Example 1. Conductive' obtained by using Example 8 using 15% by volume of an average particle size of 21 〇 nm

24 201145620 反射性絕緣粒子，且使用蕭氏A橡膠硬度為40之24 201145620 Reflective insulating particles, and using Shore A rubber hardness of 40

彈性壓頭代替蕭氏A换A 膠更度為60之彈性壓頭，除此 外，藉由與實施例1相鬥令士』 降此以 之光反射性異㈣導Γ接著Γ獲得外觀色為白色之糊狀 性導電接著劑，獲:=劑’進而使用該光反射性異向 獲仔經透明樹脂密封之LED模組。 實施例9 (KR使二 15體積%之平均粒徑…m之二氧化鈦粉末 τ軸以咖股份有限公司）代替二氧化石夕粉 末作為光反射性絕緣粒子，錢W氏A橡膠硬度為扣之 彈性壓頭代替蕭氏A橡膠硬度為6〇之 外，藉由與實施例丨相同之方々緙a , 除此以 式獲传外觀色為白色之糊狀 之光反射性異向性導電接著劑，進而使用該光反射性異向 性導電接著劑，獲得經透明樹脂密封之led模組。 實施例10 使用15體積％之藉由以下所說明之方式製備之平均粒 控為1·2ρ之光反射性絕緣粒子代替二氧切粉末作 反射性絕緣粒子，除此以外，藉由與實施们相同之方 獲得外觀色為白色之糊狀之光反射性異向性導電接著劑^ 進而使用該光反射性異向性導電接著劑，獲得經透明樹月匕 密封之LED模組。 曰 (光反射性絕緣粒子之製備） 將粒狀銀粒子（平均粒徑1//m) 5g與甲苯5_投人 至附帶授拌機之燒瓶中，—面揽拌，—面❹_合劑Ο -甲基丙烯醯氧丙基三乙氧基矽烷）〇25g投入至燒瓶中， 25 201145620 於25t下撥拌60分鐘。其次，將甲基丙稀酸甲冑2g、甲 ，丙烯酸-2-經乙§旨2g、過氧化笨甲酿G Q4g及ο—甲 苯一異氰馱sa 1 g投入至該混合物中，於8〇艽下攪拌1 2巧 時，藉此獲得絕緣被覆銀粒子作為光反射性絕緣粒子。^ 有絕緣被覆之光反射性絕緣粒子之平均粒徑為12”。該 光反射性絕緣粒子之外觀色為灰色。 實施例1 1 使用藉由以下所說明之方式製備之平均粒徑為5㈣之 先反射性導電粒子代替Au被覆樹脂導電粒子，除此以外， 藉由與實施例1相同之方式獲得外觀色為白色之糊狀之光 反射^異向性導電接著劑，進而使用該光反射性異向性導 電接者劑，獲得經透明樹脂密封之LED模組。 (光反射性導電粒子之製作） 將平均粒徑為〇.5&quot;m之氧化鈦粉末（KR- 380, Titan K〇gy〇股份有限公司）4f量份與外觀色為褐色之平均粒徑 :5/zm之Au被覆樹脂導電粒子（對平均粒徑為* —之 球狀丙烯酸樹脂粒子實 千實施厚度為〇.2&quot;m之無電鍍金而成之 ’ 份投入至機械融合裝置（AMS — GMP， :::::股份有限公司）中，於導電粒子之表面形 成由氧化欽粒子構成之厚度約為〇5&quot; 獲得光反射性導電:—丨 耵赝藉此 灰色。 杻子。該光反射性導電粒子之外觀色為 比較例1 (異向!·生導電接著劑之製備） 26 201145620 獲得外觀色為褐色之糊狀之異向性導電接著劑，其係 由作為主劑之雙酚A型環氧樹脂（Epikote 828，JER股份 有限公司）10質量份、脂肪族聚胺系硬化劑（Adeka Hardener EH435 7S，ADEKA股份有限公司）1質量份、及作為導電 粒子之平均粒徑為5以m之Au被覆樹脂導電粒子（對平均 粒控為4.6&quot;m之球狀丙烯酸樹脂粒子實施厚度為 之無電錢金而成之粒子（Bright 20GNB4.6EH ,日本化學工 業股份有限公司））1 〇質量份而構成。 (LED元件與配線板之異向性導電連接） 使用上述所獲得之異向性導電接著劑代替光反射性異 向1·生導電接著劑，且使用不鏽鋼製之金屬壓頭代替蕭氏a 橡膠硬度為65之彈性壓頭，除丨士 w,.. 尖胡除此以外’藉由與實施例1相 同之方式獲得經透明樹脂密封之LED模組。 比較例2 使用上述比較例1中所媒媒夕s λ 丁 π筏传之異向性導電接著劑代替 光反射性異向性導電接著劑，除此以外，H由與實施例！ 相同之方式獲得經透明樹脂密封之L E D模組。 比較例3 (異向性導電接著劑之製備） 於加成硬化型甲基聚錢樹脂（ker25gq，信越化學工 業股份有限公司）100質量份中 仏』 貞重伤中均勻混合料導電粒子之平 …AU被覆樹脂導電粒子(對平均粒徑為4.6 =之球狀丙稀酸樹脂粒子實施厚度為Ο、 而成之粒子（Bnght2GGNB4.咖，日本化學股限 27 201145620 公司））ίο質量份，藉此獲得外觀色為褐色之糊狀之異向性 導電接著劑，進而使用該光反射性異向性導電接著劑，藉 由與實施例1相同之方式獲得經透明樹脂密封之LED模組。 比較例4 除了不摻合光反射性絕緣粒子以外，藉由與實施例^ 相同之方式獲得外觀色為褐色之糊狀之異向性導電接著 劑’進而使用該光反射性異向性導電接著劑，獲得經透明 樹脂密封之LED模組。 比較例5 A橡膠硬度為60之 相同之方式獲得經 使用不鏽鋼製之金屬壓頭代替蕭氏 彈性壓頭，除此以外，藉由與實施例i 透明樹脂密封之LED模組。 比較例6 使用15體積〇/。之平均粒徑為21〇nm之二氧化欽粉末 KR- 380，Titan K〇gy〇股份有限公司）代替二氧化石夕粉 光反射性絕緣粒子’且使用蕭氏A橡膠硬度 =頭代替蕭…膠硬度為6〇之彈性壓頭，除此以 外’藉由與實施例1相同 方式獲得外觀色為白色之糊狀 之先反射性異向性導電接著 性導電接㈣丨從 進而使用該光反射性異向 導電接者劑，獲得經透明樹脂密封之㈣模组。 &lt;評價&gt; (光反射率評價試驗） 於玻螭環氧樹脂基板， 〇.3mm之方式塗佈實施例及 以成為l〇mm見方且乾燦厚度 比較例中所獲得之異向性導電 28 201145620 =: 熱Μ秒使之硬化。自氤氣燈光源對 °； 照射光，利用使用積分球之分光測色叶 (CM3600d，Konica Min〇lta股份有限公司），對和與硬 物垂直之轴所成之角度為8度的光，測定對波長為 之光之反射率⑽K715G)e於實用方面，期待 30%以上。 ；干与 (LED元件之缺損數之評價） 對實施例及比較例中所製成之各LED模組，目 20個LED元件之外觀，並計數產生龜裂或缺損之咖元件 之個數。將所獲得之結果示於表i。再者，「晶片之缺損 評價之「〇〜i」係指通常20個LED元件未產生龜裂或缺損， 但有極罕見地產生晶片缺損之情形。 (LED元件之接著力評價試驗）The elastic indenter replaces the Shaw A to A. The rubber is more than 60 elastic indenter, and in addition, by using the same as the first embodiment, the light is reflective (4) and then the outer appearance is obtained. A white paste-like conductive adhesive obtains: an agent' and further uses the light-reflective anisotropically obtained LED module sealed by a transparent resin. Example 9 (KR makes two 15% by volume of the average particle diameter of ... m of titanium dioxide powder τ axis Co., Ltd.) instead of the dioxide powder as the light-reflective insulating particles, the hardness of the W-A rubber is the elasticity of the buckle The indenter replaces the Shore A rubber hardness of 6 ,, and the same square 々缂 a as in the example ,, except that the light-reflective anisotropic conductive adhesive having a white appearance is obtained. Further, using the light-reflective anisotropic conductive adhesive, a LED module sealed with a transparent resin is obtained. Example 10 Using 15% by volume of light-reflective insulating particles having an average particle size of 1·2ρ prepared by the method described below instead of the dioxy-cut powder as the reflective insulating particles, The same side obtains a light-reflective anisotropic conductive adhesive having a white color in the form of a paste. Further, the light-reflective anisotropic conductive adhesive is used to obtain an LED module sealed by a transparent tree.曰 (Preparation of light-reflective insulating particles) 5 g of granular silver particles (average particle diameter 1//m) and toluene 5_ were thrown into a flask equipped with a mixer, and the mixture was mixed, and the dough was mixed. 25 g of Ο-methacryl oxiranyl triethoxy decane) was placed in a flask, and 25 201145620 was mixed at 25 t for 60 minutes. Next, 2 g of methyl methacrylate, 2, and 2, 2 g of acetyl acetate, G Q4g of oxidized, and 1 g of ε-toluene-isocyanoquinone sa were added to the mixture at 8 〇. When the crucible was stirred for 1 2, the insulating coated silver particles were obtained as light-reflective insulating particles. ^ The average particle diameter of the light-reflective insulating particles having an insulating coating is 12". The appearance color of the light-reflective insulating particles is gray. Example 1 1 The average particle diameter prepared by the method described below is 5 (four) A light-reflecting anisotropic conductive adhesive having a white appearance and a white color was obtained in the same manner as in Example 1 except that the conductive particles were coated with the Au-coated resin, and the light-reflective property was further used. An anisotropic conductive connector for obtaining a transparent resin-sealed LED module. (Production of light-reflective conductive particles) A titanium oxide powder having an average particle diameter of 〇.5 &quot;m (KR-380, Titan K〇gy) 〇 〇 〇 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A The electroless gold-plated 'm" is put into a mechanical fusion device (AMS - GMP, ::::: Co., Ltd.), and the thickness of the conductive particles is formed by the oxidized particles. The thickness is about 〇5&quot; Light reflective guide Electric: - 丨耵赝 丨耵赝 灰色 。 。 。 。 。 。 。 。 。 。 。 。 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 26 26 26 26 26 26 26 26 26 A conductive adhesive, which is a bisphenol A type epoxy resin (Epikote 828, JER Co., Ltd.) as a main component, 10 parts by mass, an aliphatic polyamine-based hardener (Adeka Hardener EH435 7S, ADEKA Co., Ltd. 1 part by mass, and Au-coated resin conductive particles having an average particle diameter of 5 m or less as conductive particles (particles having a thickness of 4.6 &quot; m spherical acrylic resin particles having a thickness of no electricity money) (Bright 20GNB4.6EH, Nippon Chemical Industry Co., Ltd.) is composed of 1 part by mass. (The anisotropic conductive connection between the LED element and the wiring board) The anisotropic conductive adhesive obtained above is used instead of the light reflective property. A conductive indenter is used for the first time, and a metal indenter made of stainless steel is used instead of the elastic indenter having a hardness of 65. In addition to the gentleman w, the tip is the same as in the first embodiment. Way to get LED resin module sealed with a resin. Comparative Example 2 In place of the light-reflective anisotropic conductive adhesive, the anisotropic conductive adhesive of the medium of the above Comparative Example 1 was used instead of the H. A transparent resin-sealed LED module was obtained in the same manner as in Example! Comparative Example 3 (Preparation of anisotropic conductive adhesive) Addition-hardening type methyl poly-resin (ker25gq, Shin-Etsu Chemical Co., Ltd. ) 100 parts by mass of 仏 仏 贞 贞 贞 均匀 均匀 均匀 均匀 AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU AU .Caf, Japanese Chemical Stock Limit 27 201145620 Company)) ίο质量份, thereby obtaining an anisotropic conductive adhesive having a brownish paste appearance, and further using the light-reflective anisotropic conductive adhesive, by The transparent resin-sealed LED module was obtained in the same manner as in Example 1. Comparative Example 4 An anisotropic conductive adhesive which was a brownish paste having a brownish appearance was obtained in the same manner as in Example except that the light-reflective insulating particles were not blended, and then the light-reflective anisotropic conductive was used. The agent obtains an LED module sealed with a transparent resin. Comparative Example 5 A rubber hardness of 60 was obtained in the same manner as in the case of using a metal indenter made of stainless steel instead of the Xiao elastic indenter, and an LED module sealed with the transparent resin of Example i. Comparative Example 6 15 volumes of 〇/ were used. The average particle size of 21 〇nm of dioxin powder KR-380, Titan K〇gy〇 Co., Ltd.) instead of the dioxide dioxide light reflective insulating particles 'and the use of Xiao A rubber hardness = head instead of Xiao... An elastic indenter having a rubber hardness of 6 Å, except that a first reflective anisotropic conductive conductive conductive connection (four) having a white appearance in the same manner as in Example 1 was obtained, and the light reflection was further used. The isotropic conductive connector obtains the (4) module sealed by the transparent resin. &lt;Evaluation&gt; (Light reflectance evaluation test) The examples were applied to a glass epoxy resin substrate at a thickness of 3 mm, and the anisotropic conductivity obtained in a comparative example of a dry thickness was obtained. 28 201145620 =: Hot Μ second to harden it. From the xenon lamp source to °; illuminating light, using the spectroscopic color measuring leaf (CM3600d, Konica Min〇lta Co., Ltd.) using an integrating sphere, the angle of 8 degrees with the axis perpendicular to the hard object, It is expected that the reflectance (10) K715G)e of the light having a wavelength is 30% or more in practical use. (Dry and (Evaluation of the number of defects of LED elements) For each of the LED modules manufactured in the examples and the comparative examples, the appearance of the 20 LED elements was counted, and the number of cracked or defective coffee elements was counted. The results obtained are shown in Table i. In addition, "〇~i" of the defect evaluation of the wafer means that 20 or less LED elements are not cracked or defective, but wafer defects are extremely rare. (Battery force evaluation test of LED elements)

關於實施例及比較例中所製成之各LED模組中之[ED 凡件與配線板之接著力’使用晶片剪切強度(die shear 价試驗機（PTR— 11〇〇，Rh⑽股份有限公司），於 剪斷速度為20&quot;m/sec之條件下測定每i片⑽模組之 3〇〇以m見方之LED元件的晶片剪切強度。測定係對點亮前 之初期狀態之LED模組，與於85〇c、85%RH之高溫高濕環 境下連續點亮300小時後之LED模組之兩種樣品而進行。 將所獲得之結果示於表1 »晶片剪切強度係藉由上述測定方 法進行測定，於實用方面期待為300gf/chip以上，較佳為 400gf/ chip 以上。 (總光通量評價試驗） ι；ί 29 201145620 對實施例及比較例中所製成之各LED模組，使用總光 通量測定系統（積分全球）（LE - 2 100，大塚電子股份有限 公司）測定總光通量（測定條件：If = 20mA (，|·亙定電流控 制））作為透明性維持性之評價。測定係對點亮前之初期狀 態之LED模組，與於85。〇、85%RH之高溫高濕環境下連續 點亮则小時後之LED模組之兩種樣品而進行。將所卿 之結果示於表卜總光通量係藉由上述測定方法進行測^于 於貫用方面期待為200mlm以上，較佳為35〇_以上 30 201145620 1 比較例 1 既 Ti02 Ο 脂環式 環氧樹 脂 鄰笨二 曱酸酐 3 &lt; 〇\ 1 發光裝置之評價 | 一 § 寸 JO r- P Ο w-» 脂環式 環氧樹 脂 鄰苯二 甲酸酐 3 &lt; u-&gt; 〇\ - S 00 ΓΛ Ό 守 雔 tiS ft 1 1 脂環式 環氧樹 脂 鄰苯二 甲酸酐 3 &lt; (N 〇 § O g m tiS 故 1 1 甲基聚 矽氡樹 脂 1 S &lt; &lt;N 〇 m fN g o ◦ ΓΜ 雔 恕s 故 1 1 雙酚A 環氧樹 脂 脂肪族 聚胺 (N 〇 § 寸 IT) (N 寸 o % — 1 1 雙酚A 環氧樹 脂 脂肪族 聚胺 3 &lt; (N 一 S IT) o § 1 實施例 = 靼 tis 既 P ο 脂環式 環氧樹 脂 鄒笨二 甲酸酐 光反射 性導電 粒子 On Ό 〇 s «η (N 〇 靼 tiS 既 絕緣被 覆Ag 1 1200 v&gt; 脂環式 環氡樹 脂 鄰苯二 甲酸酐 3 &lt; Γ^· 〇 s 寸 u-» 5 § ΙΛ 〇\ 彈性體 80 Ti〇2 ο κη 脂環式 環氧樹 脂 鄰笨二 甲酸酐 3 &lt; U-j C\ 〇 s rt tr&gt; oo 00 彈性體 40 ό* ο iTi 脂環式 環氧樹 脂 鄰笨二 甲酸酐 3 &lt; »〇 Os 7 〇 s s 云 t^· 卜 靼 ίΐ 2 故 ·Ε= ο wn &lt;N 脂環式 環氧樹 脂 鄰笨二 甲酸酐 3 &lt; »r&gt; ON 〇 s m s fN OO p- Ό 額 敏 Ρ ο «ο 脂環式 環氧樹 脂 鄰笨二 甲酸酐 3 &lt; «Ο ON 〇 $ &lt;N 芬 00 ΙΤ» 雔 故 0* ο ΓΛ w-&gt; 脂環式 環氧樹 脂 鄰苯二 甲酸酐 3 &lt; 〇\ 〇 s &lt;N Ό v〇 靼 tiS ft 2 W-J 脂環式 環氧樹 脂 鄰笨二 甲酸酐 3 &lt; •T) On 〇 s «Λ JO o ΓΛ 彈性體 65 Ti02 Ο ^Tt 脂環式 環氧樹 脂 鄰笨二 甲酸酐 3 &lt; «/&gt; 〇\ 〇 s *rt oo p- (Ν 彈性體 65 Ο tr&gt; &lt;Ν (Ν ir&gt; 脂環式 環氧樹 脂 鄰笨二 甲酸酐 3 &lt; JO 〇 s *rt rn r- P — 雔 眛 ΕΛ Ο in 脂環式 環氧樹 脂 鄰笨二 甲酸酐 3 &lt; s 〇 s ΤΓ r&quot;i ro 々 m PM 方法、構成 m *靶 ^ &lt; -¾ 光反射性絕緣粒 子 1平均粒徑（nm) 1推合量（vol°/〇) 異向性導電接著i 劑 主劑 瀹鬲¥ £1 ^ 導電性粒子 _ § 珠 W i I 評價項目 | U搞 2S 〇 想、。 f «&lt; a £啦'Ί J«\ Φ1 ^ B 璨一 q SE 3·穿 黎裒E Q赞W S却 201145620 由表1可知，實施例卜^所製造之發光裝置由於使 用分光反射率超過㈣之異向性導電接著劑，㈣用蕭氏A 硬度為40以上、未達9〇之彈性厘頭進行異向性導電連接， 故而於LED元件不產生或幾乎不產生缺損（實施例卜了及 9曰〜11)(實施例8)’顯示出實用上無問題之敎之總光通 置，又，顯不出穩定之良好之剪切強度。由於顯示出穩定 之良好之剪切強度，故而可知實施例卜n中所製造之發光 裝置實現了良好之連接可靠性。 再者’於制料被覆Ag粒子料光反射性絕緣粒子 之實施例1 0中’與其他實施例相比’由於粒徑為較大之1.2 &quot;m，故而雖然光對於粒子發生幾何學散射而非鏡面反射的 比例增力口’但與除未使用此種光反射性絕緣粒子以外其他 條件相同之比較例4相比，顯示出良好之光特性。又，、於 使用於Au被覆導電粒子之表面設置有光反射層之光反射性 導電粒子之實施例n中，與除使用Au被覆樹脂導電粒子 以外其他條件相同之實施例3相比，雖然光學特性有若干 降低，但與使用Au被覆樹脂導電粒子而非光反射性絕緣粒 子之比較例4相比’顯示出良好之光特性。 相對於此，於在異向性導電連接時利用金屬壓頭進行 加熱加壓之比較例卜5中，於LED元件產生缺損。於彈性 壓頭之蕭氏A硬度為90之比較例6中，LED元件亦產生缺 損》 ' 再者，於彈性壓頭之蕭氏A硬度為4〇之實施例8中， 由於橡膠壓頭較為柔軟，故而係以包住整個LED元件之方 32 201145620 式進行加壓。其結果為，雖然有對LED元件之姓刻部分施 加負荷之情形，且有於一併抵壓時極罕見地產生晶片缺損 之情形，但晶片缺損之產生頻率極低，因此可確定其可作For each of the LED modules manufactured in the examples and the comparative examples, the ED strength of the ED and the wiring board was used. The die shear strength tester (PTR-11, Rh(10) Co., Ltd. The wafer shear strength of the LED element of each of the (10) modules is measured at a cutting speed of 20 &quot;m/sec. The LED mode of the initial state before the lighting is measured. The group was carried out with two samples of LED modules that were continuously lit for 300 hours in a high temperature and high humidity environment of 85 ° C and 85% RH. The results obtained are shown in Table 1 » Wafer Shear Strength The measurement by the above-described measurement method is expected to be 300 gf/chip or more, preferably 400 gf/chip or more in practical use. (Total luminous flux evaluation test) ι; ί 29 201145620 For each of the LED dies manufactured in the examples and the comparative examples In the group, the total luminous flux (measurement condition: If = 20 mA (, | · 亘 current control)) was measured using the total luminous flux measurement system (integrated global) (LE - 2 100, Otsuka Electronics Co., Ltd.) as evaluation of transparency maintenance The measurement system is in the initial state before lighting The LED module is continuously illuminating in the high temperature and high humidity environment of 85. 〇 and 85% RH, and then the two samples of the LED module are displayed after the hour. The results of the clearing are shown in the table. The measurement by the above-mentioned measurement method is expected to be 200 mlm or more, preferably 35 〇 _ or more 30 201145620 1 Comparative Example 1 Ti02 脂 alicyclic epoxy resin o- phthalic anhydride 3 &lt; 〇 \ 1 Evaluation of illuminating device | § inch JO r- P Ο w-» alicyclic epoxy phthalic anhydride 3 &lt;u-&gt; 〇\ - S 00 ΓΛ Ό 雔 雔 tiS ft 1 1 alicyclic Epoxy resin phthalic anhydride 3 &lt; (N 〇§ O gm tiS 1 1 methyl polyfluorene resin 1 S &lt;&lt;N 〇m fN go ◦ 雔 雔 s 1 1 Bisphenol A ring Oxygenated aliphatic polyamine (N 〇§ inch IT) (N inch o % - 1 1 bisphenol A epoxy resin aliphatic polyamine 3 &lt; (N-S IT) o § 1 Example = 靼tis both P ο alicyclic epoxy resin Zou Budiophthalic acid light reflective conductive particles On Ό 〇s «η (N 〇靼tiS both insulation coated Ag 1 1200 v&Gt; alicyclic cyclic oxime resin phthalic anhydride 3 &lt; Γ^· 〇s inch u-» 5 § ΙΛ 〇\ Elastomer 80 Ti〇2 ο κη alicyclic epoxy resin o-dicarboxylic anhydride 3 &lt; Uj C\ 〇s rt tr&gt; oo 00 Elastomer 40 ό* ο iTi alicyclic epoxy resin o-dime anhydride 3 &lt; »〇Os 7 〇ss cloud t^· Bu 靼 ΐ 2 故 Ε = ο wn &lt;N alicyclic epoxy resin o-dime anhydride 3 &lt;»r&gt; ON 〇sms fN OO p- Ό Emin ο ο «ο alicyclic epoxy resin o-dicarboxylic anhydride 3 &lt «Ο ON 〇$ &lt;N fen 00 ΙΤ» 雔故0* ο ΓΛ w-&gt; alicyclic epoxy phthalic anhydride 3 &lt; 〇\ 〇s &lt;N Ό v〇靼tiS ft 2 WJ alicyclic epoxy resin o-dime anhydride 3 &lt; •T) On 〇s «Λ JO o ΓΛ Elastomer 65 Ti02 Ο ^Tt alicyclic epoxy resin o-dime anhydride 3 &lt;&gt; 〇\ 〇s *rt oo p- (Ν Elastomer 65 Ο tr&gt;&lt;Ν (Ν ir&gt; alicyclic epoxy phthalate 3 &lt; JO 〇s *rt rn r- P —雔眛ΕΛ Ο in alicyclic ring Resin o-dicarboxylic anhydride 3 &lt; s 〇s ΤΓ r&quot;i ro 々m PM method, constitute m * target ^ &lt; -3⁄4 light reflective insulating particle 1 average particle size (nm) 1 push-in amount (vol° /〇) Anisotropic conduction followed by the main agent 瀹鬲¥ £1 ^ Conductive particles _ § Beads W i I Evaluation item | U engage 2S 〇想,. f «&lt; a £啦'Ί J«\ Φ1 ^ B 璨一q SE 3·穿黎裒EQ赞WS but 201145620 It can be seen from Table 1 that the illuminating device manufactured by the embodiment has a spectral reflectance exceeding (4) Anisotropic conductive adhesive, (4) Anisotropic conductive connection is performed with an elastic PCT having a Shore A hardness of 40 or more and less than 9 Å, so that no defects are generated or hardly generated in the LED element (Examples and 9曰~11) (Embodiment 8) 'shows that the total light is practically no problem, and it shows no stable good shear strength. Since a stable and good shear strength is exhibited, it is understood that the light-emitting device manufactured in the embodiment n achieves good connection reliability. Furthermore, in the embodiment 10 of the material-coated Ag-particle material light-reflective insulating particles, 'compared with other examples', since the particle diameter is larger than 1.2 &quot;m, although the light is geometrically scattered to the particles The ratio increase port of the specular reflection is not a better light characteristic than the comparative example 4 except that the light reflective insulating particles are not used. Further, in the example n of the light-reflective conductive particles provided with the light-reflecting layer on the surface of the Au-coated conductive particles, the optical light was the same as the third embodiment except that the Au-coated resin conductive particles were used. There are some reductions in characteristics, but it exhibits good light characteristics as compared with Comparative Example 4 in which Au-coated resin conductive particles are used instead of light-reflective insulating particles. On the other hand, in the comparative example 5 in which the metal indenter was used for heating and pressurization at the time of the anisotropic conductive connection, the LED element was defective. In Comparative Example 6 in which the Shore A hardness of the elastic indenter was 90, the LED element was also defective. In addition, in Example 8 in which the Shore A hardness of the elastic indenter was 4, the rubber indenter was relatively It is soft, so it is pressurized by the method of covering the entire LED element 32 201145620. As a result, although there is a case where a load is applied to the portion of the LED element, and a wafer defect is extremely rare when the pressure is applied together, the frequency of occurrence of the wafer defect is extremely low, so that it can be determined that it can be used.

為實施例。因此得知，於異向性導電連接時需要使用蕭氏A 硬度為40 (實施例8 )以上、未達9〇 (比較例6、實施例9 ) 之彈性壓頭。 又’於未使用光反射性絕緣粒子之比較例1〜4中，總 光通量不足。因此得知，必須使用光反射性絕緣粒子。 再者，由使用折射率不同之反射性絕緣粒子之實施例i (Si02 ’折射率丨.…、實施例2 (Zn〇，丨9〜2⑴、實施 例3(Ti〇2,折射率2.72或2 52 )得知’隨著折射率增大， 分光反射率及LED總光通量共同提高。 由反射性絕緣粒子之含量不同之實施例6 ( 5v〇l% )、實 施例3(15νο1%)及實施例7(25v〇1%)得知，若光反射性 絕緣粒子之含量增多，則樹脂硬化物在變硬之同時會變 向，又，若含量減少， 若含量減少，則有作為 脆，因此有晶片剪切強度降低之傾向， 則有總光通量下降之傾向。再者，若令 糊狀接著劑之操作性降低之傾向。 由比較例3得知，若使用加 右使用加成硬化型矽系樹脂作為異For the examples. Therefore, it has been found that an elastic indenter having a Shore A hardness of 40 (Example 8) or more and less than 9 Å (Comparative Example 6 and Example 9) is required for the anisotropic conductive connection. Further, in Comparative Examples 1 to 4 in which light-reflective insulating particles were not used, the total luminous flux was insufficient. Therefore, it has been known that light-reflective insulating particles must be used. Further, Example i using a reflective insulating particle having a different refractive index (SiO 2 'refractive index 丨..., Example 2 (Zn〇, 丨9 to 2 (1), Example 3 (Ti〇2, refractive index 2.72 or 2 52 ) It is known that as the refractive index increases, the spectral reflectance and the total luminous flux of the LED increase together. Example 6 (5v〇l%), Example 3 (15νο1%) and the content of the reflective insulating particles are different. In the case of the seventh embodiment (25v〇1%), when the content of the light-reflective insulating particles is increased, the cured resin is deformed while being hardened, and if the content is decreased, if the content is decreased, it is brittle. Therefore, there is a tendency for the wafer shear strength to decrease, and the total luminous flux tends to decrease. Further, the operability of the paste-like adhesive tends to be lowered. From Comparative Example 3, it is known that the addition-use addition-hardening type is used. Lanthanide resin

[產業上之可利用性][Industrial availability]

33 201145620 使發光元件之發弁絲求；收 ## 、 _，而於配線板異向性導電連接 發光凡* 件。又，*7 S * # ffl -i. ^ μ - ± 導電連接時進行加熱加壓而 使用具有特疋表面硬度之彈 件產“&quot;从 頭，因此可防止於發光元 件產生龜裂或缺損，並 進彳μ ^ ^ 使用先反射性異向性導電接著劑 Γ:=Γ 異向性導電連接。因此，本發明之 可=用方法及藉由該製造方法所製得之發光裝置 :於=ED元件等發光元件之顯示用顯示裝置'照明 之中。 查械15先源等電子機器及其製造領域 【圖式簡單說明】 圖1A係本發明之製造方法之步驟説明圖。 圖1B係本發明之製造方法之步驟説明圖。 圖1C係本發明之製造方法之步驟説明圖。 圖1D係於本發明中所製造之發光裝置之概略剖面圖。 圖1E係於本發明中所製造之發光襄置之概略剖面圖。 圖則本發明所使用之光反射性導電粒子之剖面圖。 圖则本發明所使用之多層化光反射性導心子之刹 向圖。 【主要元件符號說明】 1 發光元件 1 a 發光元件之電極 2 配線板 2a 配線板之電極 3 光反射性異向性導電接著劑 34 201145620 3' 光反射性異向性導電接著劑之硬化物 3a 熱硬化性樹脂組成物 3b 導電粒子 3c 光反射性絕緣粒子 3d 填角部 4 彈性壓頭 4a 彈性壓頭之抵壓面 5 壓頭基座 6 透明密封樹脂 21 核心粒子 22 無機粒子 23 光反射層 24 熱塑性樹脂 100 、 110 發光裝置 200 光反射性導電粒子 300 多層化光反射性導電粒子 3533 201145620 Make the hairline of the light-emitting component; receive ##, _, and the anisotropic conductive connection on the wiring board. Further, *7 S * # ffl -i. ^ μ - ± When the conductive connection is performed by heating and pressurizing, the elastic member having the characteristic surface hardness is used to produce "&quot; from the beginning, thereby preventing cracking or defect of the light-emitting element. And 彳μ ^ ^ using a reflective anisotropic conductive adhesive Γ: = Γ anisotropic conductive connection. Therefore, the method of the present invention and the light-emitting device produced by the method: The display device for illuminating elements such as ED elements is illuminated. The electronic device such as the inspection device 15 and its manufacturing field [Simplified description of the drawings] Fig. 1A is a step-by-step illustration of the manufacturing method of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1C is a schematic sectional view of a manufacturing method of the present invention. Fig. 1D is a schematic sectional view of a light-emitting device manufactured in the present invention. Fig. 1E is a light-emitting device manufactured in the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of a light-reflective conductive particle used in the present invention. Fig. is a view showing the brake light of a multilayer light-reflecting core used in the present invention. Component 1 a Electrode 2 electrode 2 wiring board 2a wiring board electrode 3 light-reflective anisotropic conductive adhesive 34 201145620 3' Light-reflective anisotropic conductive adhesive cured product 3a Thermosetting resin composition 3b Conductive particle 3c light Reflective insulating particles 3d Fillet 4 Elastic head 4a Pressing surface of elastic head 5 Indenter base 6 Transparent sealing resin 21 Core particles 22 Inorganic particles 23 Light reflecting layer 24 Thermoplastic resin 100, 110 Light-emitting device 200 Light reflection Conductive particles 300 multilayer light-reflective conductive particles 35

Claims (1)

201145620 七、申請專利範圍： 1.種發光裝置之製造方法，其係於配線板異向性導電 連接發光元件而成之發光裝置之製造方法，其具有下述步 驟（A )及（B ): 步驟（A ) 於發光兀件與待連接該發光元件之配線板之間，配置 含有熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子 之光反射性異向性導電接著劑之步驟；及 步驟（B) 對配線板，利用抵壓面之蕭氏A橡膠硬度（jis KM”） 為40以上、未達9q之彈性壓頭加熱加壓發光元件，藉此 進行異向性導電連接之步驟。 2. 如申請專利範圍第i項之製造方法，其中，光反射性 異向性導電接著劑對波長為450nm之光的分光反射率（爪 K7105)為 30%以上。 3. 如申請專利範圍第…項之製造方法，其中，光反 射11絕緣粒子係選自由氧化石夕 '氧化欽、氛化石朋、氧化辞 及氧化鋁所組成之群中之至少一種無機粒子。 4·如申請專利範圍第1至3項中任-項之製造方法，其 中’光反射性絕緣粒子之平均粒徑為15〇nm〜55〇⑽。 5·如申請專利範圍第】至4項中任一項之製造方法，其 中’光反射性絕緣粒子之折射率（JIS κ7ΐ42)大於執硬化 性樹脂組成物之硬化物之折射率（JISK7142)。 ‘、 6·如申請專利範圍第…項中任一項之製造方法，其 36 201145620 中，光反射性絕緣粒子係利用絕緣性樹脂被覆鱗片狀或球 狀銀粒子表面而成之樹脂被覆金屬粒子。 7.如申請專利範圍第1至6項中任一項之製造方法，其 中’熱硬化性樹脂組成物中之光反射性絕緣粒子之摻合量 為1〜5 0體積％。 8 ·如申請專利範圍第1至7項中任一項之製造方法，其 中，熱硬化性樹脂組成物含有環氧樹脂與酸酐系硬化劑。 9. 如申請專利範圍第1至8項中任一項之製造方法’其 中’彈性壓頭之抵壓面之蕭氏A橡膠硬度（JIS K6253 )為 65以上、80以下。 10. 如申請專利範圍第丨至9項中任一項之製造方法， 其更具有下述步驟（c): (c )使用透明樹脂密封被異向性導電連接於配線板上 之發光元件之步驟。 11. 如申請專利範圍第1至ίο項中任一項之製造方法， 其中，導電粒子係由被金屬材料被覆之核心樹脂粒子與形 成於其表面之光反射層所構成之光反射性導電粒子，該光 反射層係由選自氧化鈦粒子、氧化鋅粒子或氧化鋁粒子中 至少一種無機粒子所形成。 12. 如申請專利範圍第u項之製造方法，其中，光反射 性導電粒子相對於熱硬化性樹脂組成物1〇〇質量份的摻合 罝為1〜100質量份。 13 _ —種發光裝置，其係藉由申請專利範圍第^至1 2項 中任一項之製造方法所製得。 37 201145620 14.如申請專利範圍第13項之發光裝置，其中，發光元 件為發光二極體。 38201145620 VII. Patent Application Range: 1. A method for manufacturing a light-emitting device, which is a method for manufacturing a light-emitting device in which a wiring board is anisotropically electrically connected to a light-emitting element, which has the following steps (A) and (B): Step (A) a step of disposing a light-reflective anisotropic conductive adhesive containing a thermosetting resin composition, conductive particles, and light-reflective insulating particles between the light-emitting element and the wiring board to which the light-emitting element is to be connected; And step (B) heating the pressure-emitting element to the wiring board by using an elastic embossing head of 40 or more and an elastic nip of less than 9q by the abutting surface, thereby performing an anisotropic conductive connection 2. The method according to claim i, wherein the light-reflective anisotropic conductive adhesive has a spectral reflectance (claw K7105) of light having a wavelength of 450 nm of 30% or more. The method of manufacturing the invention, wherein the light reflection 11 is selected from the group consisting of at least one inorganic particle consisting of a group consisting of oxidized stone, oxidized stone, oxidized and alumina. The manufacturing method of any one of Items 1 to 3, wherein the average particle diameter of the light-reflective insulating particles is 15 〇 nm to 55 〇 (10). 5. If any of the patent applications Scope 4 to 4 The manufacturing method of the item, wherein the refractive index (JIS κ7ΐ42) of the light-reflective insulating particles is larger than the refractive index of the cured product of the curable resin composition (JISK7142). ', 6· as in the scope of the patent application. In the method of manufacturing the article, in the case of the light-reflective insulating particles, the resin-coated metal particles are coated with the surface of the scaly or spherical silver particles with an insulating resin. A manufacturing method in which the amount of the light-reflective insulating particles in the thermosetting resin composition is from 1 to 50% by volume. 8. The manufacturing according to any one of claims 1 to 7. The method of the present invention, wherein the thermosetting resin composition contains an epoxy resin and an acid anhydride-based hardener. 9. The manufacturing method according to any one of claims 1 to 8 wherein the elastic surface of the elastic head is inferior. A rubber hardness (JI S K6253 ) is 65 or more and 80 or less. 10. The manufacturing method according to any one of claims 9 to 9, which further has the following step (c): (c) sealing the anisotropic using a transparent resin The manufacturing method of the light-emitting element of the wiring board, wherein the conductive particle is composed of a core resin particle coated with a metal material and formed on the surface thereof. The light-reflective conductive particles formed of the light-reflecting layer are formed of at least one type of inorganic particles selected from the group consisting of titanium oxide particles, zinc oxide particles, and alumina particles. 12. The production method according to the invention of claim 5, wherein the light-reflective conductive particles are blended in an amount of 1 to 100 parts by mass based on 1 part by mass of the thermosetting resin composition. A illuminating device is produced by the manufacturing method of any one of the above claims. The light-emitting device of claim 13, wherein the light-emitting element is a light-emitting diode. 38
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013105636A (en) * 2011-11-14 2013-05-30 Dexerials Corp Anisotropic conductive film, connection method, and connected body
KR101933190B1 (en) * 2012-03-28 2018-12-31 서울반도체 주식회사 Light Emitting Diode Package and Fabrication Method for the Same
JP2013243344A (en) * 2012-04-23 2013-12-05 Nichia Chem Ind Ltd Light-emitting device
JP6477794B2 (en) * 2012-04-23 2019-03-06 日亜化学工業株式会社 Light emitting device
JP5958107B2 (en) * 2012-06-15 2016-07-27 デクセリアルズ株式会社 Light-reflective anisotropic conductive adhesive and light-emitting device
JP6490328B2 (en) * 2012-06-20 2019-03-27 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
WO2014013984A1 (en) * 2012-07-19 2014-01-23 デクセリアルズ株式会社 Light-reflective anisotropic electro-conductive adhesive agent, and light-emitting device
WO2014178666A1 (en) * 2013-04-30 2014-11-06 주식회사 세미콘라이트 Semiconductor light emitting diode and method for manufacturing same
CN103337578A (en) * 2013-05-24 2013-10-02 袁灵 Method and structure of upright-installed dual-electrode chip inverted pasting application
JP6343923B2 (en) * 2013-12-18 2018-06-20 日亜化学工業株式会社 Light emitting device
KR20150078296A (en) * 2013-12-30 2015-07-08 일진엘이디(주) Light emitting device with excellent reliability
JP6349910B2 (en) * 2014-04-23 2018-07-04 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
US9812625B2 (en) 2014-02-18 2017-11-07 Nichia Corporation Light-emitting device having resin member with conductive particles
JP2015153981A (en) * 2014-02-18 2015-08-24 日亜化学工業株式会社 light-emitting device
KR20160135197A (en) * 2014-03-20 2016-11-25 데쿠세리아루즈 가부시키가이샤 Anisotropic conductive film and manufacturing method thereof
JP6401285B2 (en) 2014-09-26 2018-10-10 東芝ホクト電子株式会社 Manufacturing method of light emitting module
JP6398554B2 (en) * 2014-09-30 2018-10-03 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
EP3273493B1 (en) * 2015-03-18 2022-03-02 Dexerials Corporation Method for manufacturing light emitting device
WO2016183844A1 (en) * 2015-05-21 2016-11-24 Goertek.Inc Transferring method, manufacturing method, device and electronic apparatus of micro-led
CN104821369A (en) * 2015-05-25 2015-08-05 叶志伟 Flip LED packaging method
DE102015112967A1 (en) * 2015-08-06 2017-02-09 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component and optoelectronic component
JP7011148B2 (en) * 2016-04-01 2022-01-26 日亜化学工業株式会社 A method for manufacturing a light emitting element mounting substrate and a method for manufacturing a light emitting device using the same, and a light emitting element mounting substrate and a light emitting device using the same.
JP7011147B2 (en) * 2016-04-01 2022-01-26 日亜化学工業株式会社 A method for manufacturing a light emitting element mounting substrate and a method for manufacturing a light emitting device using the same, and a light emitting element mounting substrate and a light emitting device using the same.
EP3226291B1 (en) * 2016-04-01 2024-04-03 Nichia Corporation Method of manufacturing a light emitting element mounting base member, and light emitting element mounting base member
US10644210B2 (en) 2016-04-01 2020-05-05 Nichia Corporation Method of manufacturing light emitting element mounting base member, method of manufacturing light emitting device using the light emitting element mounting base member, light emitting element mounting base member, and light emitting device using the light emitting element mounting base member
CN108803149B (en) * 2018-07-20 2021-05-25 京东方科技集团股份有限公司 Surface light source, manufacturing method thereof and liquid crystal display device
US10964867B2 (en) 2018-10-08 2021-03-30 Facebook Technologies, Llc Using underfill or flux to promote placing and parallel bonding of light emitting diodes
EP3864709B1 (en) * 2018-10-12 2023-09-06 OSRAM GmbH Method for manufacturing a light-emitting device
JP2020087907A (en) * 2018-11-21 2020-06-04 信越化学工業株式会社 Method for manufacturing anisotropic film
KR102252598B1 (en) * 2019-10-01 2021-05-18 주식회사 에스엘바이오닉스 Substrate and semiconductor light emitting device using the same
JP2021153114A (en) * 2020-03-24 2021-09-30 株式会社ジャパンディスプレイ Wiring board and display device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1120233A (en) * 1997-06-30 1999-01-26 Kyocera Corp Optical printer head
JPH11168235A (en) * 1997-12-05 1999-06-22 Toyoda Gosei Co Ltd Light emitting diode
JP2001234152A (en) * 2000-02-24 2001-08-28 Sumitomo Metal Mining Co Ltd Conductive adhesive
JP2001332124A (en) * 2000-05-22 2001-11-30 Toshiba Chem Corp Conductive paste and optical semiconductor device
JP4114364B2 (en) * 2001-11-08 2008-07-09 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP3886401B2 (en) * 2002-03-25 2007-02-28 ソニーケミカル＆インフォメーションデバイス株式会社 Method for manufacturing connection structure
JP4539813B2 (en) * 2003-08-19 2010-09-08 ソニーケミカル＆インフォメーションデバイス株式会社 Insulation coated conductive particles
CN102277096A (en) * 2005-03-04 2011-12-14 索尼化学&信息部件株式会社 Anisotropic conductive adhesive and method of electrode connection therewith
JP2007157940A (en) * 2005-12-02 2007-06-21 Nichia Chem Ind Ltd Light emitting device and method of manufacturing same
JP4925669B2 (en) * 2006-01-13 2012-05-09 ソニーケミカル＆インフォメーションデバイス株式会社 Crimping apparatus and mounting method
JP5099289B2 (en) * 2006-02-03 2012-12-19 ソニーケミカル＆インフォメーションデバイス株式会社 Thermosetting adhesive
JP2007324413A (en) * 2006-06-01 2007-12-13 Sony Chemical & Information Device Corp Thermocompression bonding head and mounting device using the same
JP4432949B2 (en) * 2006-09-15 2010-03-17 パナソニック株式会社 Electrical component connection method
JP5608955B2 (en) * 2007-02-06 2014-10-22 日亜化学工業株式会社 LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND LIGHT EMITTING DEVICE MOLDED BODY
JP5074082B2 (en) * 2007-04-16 2012-11-14 ソニーケミカル＆インフォメーションデバイス株式会社 Conductive particle body, anisotropic conductive connecting material using the same, and method for producing conductive particle body
JP5226562B2 (en) * 2008-03-27 2013-07-03 デクセリアルズ株式会社 Anisotropic conductive film, joined body and method for producing the same
JP2010050236A (en) * 2008-08-20 2010-03-04 Mitsubishi Chemicals Corp Semiconductor light emitting device, and method for manufacturing the same
JP2010050235A (en) * 2008-08-20 2010-03-04 Mitsubishi Chemicals Corp Semiconductor light emitting device, and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103378282A (en) * 2012-04-27 2013-10-30 展晶科技(深圳)有限公司 Method for manufacturing light emitting diode encapsulating structures
CN103000796A (en) * 2012-11-23 2013-03-27 王知康 Method for installing light-emitting diode (LED) by utilizing asymmetrical conductive paste (ACP)
US11450639B2 (en) 2016-03-15 2022-09-20 Epistar Corporation Semiconductor device and a method of manufacturing thereof
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