TW201418407A - Light-reflective anisotropic electro-conductive adhesive agent, and light-emitting device - Google Patents

Light-reflective anisotropic electro-conductive adhesive agent, and light-emitting device Download PDF

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Publication number
TW201418407A
TW201418407A TW102125663A TW102125663A TW201418407A TW 201418407 A TW201418407 A TW 201418407A TW 102125663 A TW102125663 A TW 102125663A TW 102125663 A TW102125663 A TW 102125663A TW 201418407 A TW201418407 A TW 201418407A
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Taiwan
Prior art keywords
light
particles
reflective
anisotropic conductive
conductive adhesive
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TW102125663A
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Chinese (zh)
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Keisuke Morita
Tomoyasu Sunaga
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Dexerials Corp
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Publication of TW201418407A publication Critical patent/TW201418407A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
    • C08G59/306—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C09J183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/38—Polysiloxanes modified by chemical after-treatment
    • C08G77/382—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon
    • C08G77/388—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2227—Oxides; Hydroxides of metals of aluminium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2237—Oxides; Hydroxides of metals of titanium
    • C08K2003/2241—Titanium dioxide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2296—Oxides; Hydroxides of metals of zinc
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/38—Boron-containing compounds
    • C08K2003/382—Boron-containing compounds and nitrogen
    • C08K2003/385—Binary compounds of nitrogen with boron
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen
    • C08K5/5477—Silicon-containing compounds containing nitrogen containing nitrogen in a heterocyclic ring
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Epoxy Resins (AREA)
  • Wire Bonding (AREA)

Abstract

A light-reflective anisotropic electro-conductive adhesive agent, which can be used for the anisotropic electro-conductive connection of a light-emitting element to a wiring board, comprises a heat-curable resin composition, electrically conductive particles and light-reflective insulating particles. The heat-curable resin composition comprises a diglycidyl isocyanuryl-modified polysiloxane represented by formula (1) and an epoxy resin-curing agent.

Description

光反射性異向性導電接著劑及發光裝置 Light reflective anisotropic conductive adhesive and light emitting device

本發明係關於一種用以將發光元件異向性導電連接於配線板之光反射性異向性導電接著劑、及使用該接著劑將發光元件安裝於配線板而成之發光裝置。 The present invention relates to a light-reflective anisotropic conductive adhesive for electrically connecting an anisotropic conductive member to a wiring board, and a light-emitting device in which the light-emitting element is mounted on a wiring board using the adhesive.

使用發光二極體(LED)元件之發光裝置受到廣泛使用，如圖3所示，舊型發光裝置之構造為下述者：於基板31上利用黏晶(die bond)接著劑32接合LED元件33，將其上表面之p電極34與n電極35利用金線37打線接合(wire bonding)於基板31之連接端子36，並將LED元件33整體以透明鑄模(mould)樹脂38加以密封。然而，於圖3之發光裝置之情形時，存在如下問題：LED元件33發出之光中向上表面側出射之波長400~500nm之光由金線37吸收，又，向下表面側出射之光之一部分由黏晶接著劑32吸收，LED元件33之發光效率降低。 A light-emitting device using a light-emitting diode (LED) element is widely used. As shown in FIG. 3, the old-type light-emitting device is configured to bond LED elements on a substrate 31 with a die bond adhesive 32. 33. The p-electrode 34 and the n-electrode 35 on the upper surface thereof are wire bonded to the connection terminal 36 of the substrate 31 by a gold wire 37, and the entire LED element 33 is sealed with a transparent mold resin 38. However, in the case of the light-emitting device of FIG. 3, there is a problem that light having a wavelength of 400 to 500 nm emitted from the light emitted from the LED element 33 is absorbed by the gold wire 37, and light emitted from the lower surface side. A part is absorbed by the adhesive bonding agent 32, and the luminous efficiency of the LED element 33 is lowered.

因此，就關於LED元件之光反射之發光效率之提高之觀點而言，如圖4所示，提出有將LED元件33進行覆晶(flip chip)構裝之技術(專利文獻1)。於該覆晶構裝安裝技術中，於p電極34與n電極35分別形成凸塊39，進而，於LED元件33之凸塊形成面上以p電極34與n電極35絕緣之方式設置有光反射層40。而且，LED元件33與基板31係使用異向性導電糊41或異向性導電膜(未圖示)使其等硬化而連接固定。因此， 於圖4之發光裝置中，LED元件33之向上方出射之光不會被金線吸收，向下方出射之光幾乎經光反射層40反射而向上方出射，因此發光效率(光提取效率)不會降低。 Therefore, as for the improvement of the luminous efficiency of the light reflection of the LED element, as shown in FIG. 4, a technique of performing flip chip mounting of the LED element 33 has been proposed (Patent Document 1). In the flip chip mounting mounting technique, bumps 39 are formed on the p-electrode 34 and the n-electrode 35, respectively, and light is provided on the bump forming surface of the LED element 33 so that the p-electrode 34 and the n-electrode 35 are insulated from each other. Reflective layer 40. Further, the LED element 33 and the substrate 31 are bonded and fixed by using an anisotropic conductive paste 41 or an anisotropic conductive film (not shown). therefore, In the light-emitting device of FIG. 4, the light emitted upward from the LED element 33 is not absorbed by the gold wire, and the light emitted downward is almost reflected by the light reflection layer 40 and is emitted upward, so that the luminous efficiency (light extraction efficiency) is not Will decrease.

又，不同於關於LED元件之光反射發光效率之提高的觀點，就防止隨著用於LED元件之安裝之異向性導電糊或異向性導電膜中之絕緣性樹脂成分因熱或光所引起之變色，而使LED元件之出射光發生顏色變化之觀點而言，嘗試將耐熱性、耐光性優異之二液硬化型甲基聚矽氧樹脂或二液硬化型苯基聚矽氧樹脂用作異向性導電糊或異向性導電膜中之絕緣性樹脂成分。 Further, unlike the viewpoint of the improvement of the light-reflecting luminous efficiency of the LED element, the insulating resin component in the anisotropic conductive paste or the anisotropic conductive film for mounting the LED element is prevented from being thermally or light-retained. In view of the discoloration caused by the color change of the light emitted from the LED element, it is attempted to use a two-liquid hardening type methyl polyoxyn resin or a two-liquid hardening type phenyl polyoxyl resin which is excellent in heat resistance and light resistance. An insulating resin component in an anisotropic conductive paste or an anisotropic conductive film.

專利文獻1：日本特開平11-168235號公報 Patent Document 1: Japanese Patent Laid-Open No. Hei 11-168235

然而，於專利文獻1之技術中存在如下問題：必須藉由金屬蒸鍍法等將光反射層40以p電極34與n電極35絕緣之方式設置於LED元件33，於製造上無法避免成本增加，另一方面，於未設置光反射層40之情形時，存在如下問題：硬化之異向性導電糊或異向性導電膜中經金、鎳或銅被覆之導電粒子表面呈現茶色或暗茶色，又，分散有導電粒子之環氧樹脂黏合劑自身亦因常用於使其硬化之咪唑系潛在性硬化劑而呈現茶色，而難以提高發光元件所發出之光的發光效率(光提取效率)。 However, in the technique of Patent Document 1, there is a problem in that the light reflection layer 40 must be provided on the LED element 33 by the metal vapor deposition method or the like so as to insulate the p electrode 34 from the n electrode 35, and manufacturing cost cannot be avoided. On the other hand, in the case where the light reflecting layer 40 is not provided, there is a problem that the surface of the conductive particles coated with gold, nickel or copper in the hardened anisotropic conductive paste or the anisotropic conductive film exhibits a brown or dark brown color. Further, the epoxy resin adhesive in which the conductive particles are dispersed is also brown in color due to the imidazole-based latent curing agent which is often used for hardening, and it is difficult to increase the luminous efficiency (light extraction efficiency) of the light emitted from the light-emitting element.

又，於將二液硬化型甲基聚矽氧樹脂或二液硬化型苯基聚矽氧樹脂用作異向性導電糊或異向性導電膜中之絕緣性樹脂成分時，存在如下問題：雖然可抑制絕緣性樹脂成分因熱或光而變色，但LED元件相對於 構裝基板之剝離強度(晶片剪切強度，die shear strength)而成為不適於實際應用之水準。 Further, when the two-liquid curing type methyl polyoxyn resin or the two-liquid hardening type phenyl polyoxyl resin is used as an insulating resin component in an anisotropic conductive paste or an anisotropic conductive film, there are the following problems: Although it is possible to suppress the discoloration of the insulating resin component due to heat or light, the LED element is opposed to The peel strength (die shear strength) of the substrate is set to a level that is not suitable for practical use.

本發明之目的在於解決以上先前技術之問題，提供一種異向性導電接著劑及使用該接著劑將發光元件覆晶構裝於配線板而成之發光裝置，該異向性導電接著劑係於使用異向性導電接著劑將發光二極體(LED)元件等發光元件覆晶構裝於配線板以製造發光裝置時，即使未於LED元件上設置導致製造成本增加之光反射層，亦可改善發光效率，並且不易因熱或光而變色，且實際應用上表現充分之晶片剪切強度。 An object of the present invention is to solve the above problems of the prior art, and to provide an anisotropic conductive adhesive and a light-emitting device in which a light-emitting element is laminated on a wiring board using the adhesive, and the anisotropic conductive adhesive is attached to When a light-emitting element such as a light-emitting diode (LED) element is laminated on a wiring board by using an anisotropic conductive adhesive to manufacture a light-emitting device, even if a light-reflecting layer which increases manufacturing cost is not provided on the LED element, Improves luminous efficiency, and is not easily discolored by heat or light, and exhibits sufficient wafer shear strength in practical applications.

本發明人等在使異向性導電接著劑本身具有光反射功能則可不使發光效率降低之假定下發現，藉由於異向性導電接著劑中調配光反射性絕緣粒子，可不使發光元件之發光效率降低。又，本發明人等發現，藉由使用具有特定結構之二縮水甘油基異氰尿醯基(diglycidylisocyanuryl)改質聚矽氧烷作為異向性導電接著劑之絕緣性接著成分，可防止異向性導電接著劑因熱或光而變色，並且實際應用上表現充分之晶片剪切強度。於是，基於該等見解完成本發明。 The present inventors have found that the anisotropic conductive adhesive itself has a light reflecting function, and it is found that the light-emitting efficiency is not lowered, and that the light-reflective insulating particles are blended in the anisotropic conductive adhesive, so that the light-emitting element can be prevented from being emitted. Reduced efficiency. Further, the present inventors have found that by using an oligocilylisocyanuryl modified polyoxyalkylene having a specific structure as an insulating adhesive component of an anisotropic conductive adhesive, it is possible to prevent anisotropy. The conductive conductive adhesive discolors due to heat or light, and practically exhibits sufficient wafer shear strength. Thus, the present invention has been completed based on these findings.

即，本發明提供一種光反射性異向性導電接著劑，係用以將發光元件異向性導電連接於配線板，其特徵在於：含有熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子，熱硬化性樹脂組成物含有由式(1)表示之二縮水甘油基異氰尿醯基改質聚矽氧烷及環氧樹脂用硬化劑。 That is, the present invention provides a light-reflective anisotropic conductive adhesive for connecting an anisotropic conductive connection of a light-emitting element to a wiring board, comprising: a thermosetting resin composition, conductive particles, and light-reflective insulation. The particles and the thermosetting resin composition contain a diglycidyl isocyanurethane-based modified polyoxyalkylene represented by the formula (1) and a curing agent for an epoxy resin.

式(1)中，R為烷基或芳基，n為1~40之數。 In the formula (1), R is an alkyl group or an aryl group, and n is a number from 1 to 40.

又，作為該光反射性異向性導電接著劑之特佳態樣，本發明提供一種光反射性異向性導電接著劑，其中導電粒子係經金屬材料被覆之核心粒子及光反射層所構成的光反射性導電粒子，該光反射層係於該核心粒子表面由選自氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子中之至少一種無機粒子所形成。 Moreover, as a particularly preferable aspect of the light-reflective anisotropic conductive adhesive, the present invention provides a light-reflective anisotropic conductive adhesive, wherein the conductive particles are composed of a core material coated with a metal material and a light-reflecting layer. The light-reflective conductive particles are formed on the surface of the core particle by at least one inorganic particle selected from the group consisting of titanium oxide particles, boron nitride particles, zinc oxide particles, and alumina particles.

又，本發明提供一種經由上述光反射性異向性導電接著劑將發光元件以覆晶方式構裝於配線板而成之發光裝置。 Moreover, the present invention provides a light-emitting device in which a light-emitting element is flip-chip mounted on a wiring board via the above-described light-reflective anisotropic conductive adhesive.

用以將發光元件異向性導電連接於配線板之本發明之光反射性異向性導電接著劑含有作為黏合劑之熱硬化性樹脂組成物、光反射性絕緣粒子及導電粒子。該熱硬化性樹脂組成物含有利用環氧樹脂用硬化劑進行硬化的由式(1)表示之二縮水甘油基異氰尿醯基改質聚矽氧烷。該聚矽氧烷於其兩末端鍵結有二縮水甘油基異氰尿醯基烷基。因此，可防止光反射性異向性導電接著劑因熱或光而變色，並且實際應用上可實現充分之晶片剪切強度。 The light-reflective anisotropic conductive adhesive of the present invention for electrically connecting an anisotropic conductive material to a wiring board contains a thermosetting resin composition as a binder, light-reflective insulating particles, and conductive particles. The thermosetting resin composition contains a diglycidyl isocyanurethane-based modified polyoxyalkylene represented by the formula (1) which is cured by a curing agent for an epoxy resin. The polyoxyalkylene is bonded with diglycidyl isocyanurinylalkyl groups at both ends thereof. Therefore, the light-reflective anisotropic conductive adhesive can be prevented from discoloring due to heat or light, and sufficient wafer shear strength can be achieved in practical use.

又，本發明之光反射性異向性導電接著劑含有光反射性絕緣 粒子，因此可反射光。尤其於光反射性絕緣粒子為選自由氧化鈦粒子、氮化硼粒子、氧化鋅粒子及氧化鋁粒子所組成之群中之至少一種無機粒子、或為經絕緣性樹脂被覆鱗片狀或球狀金屬粒子表面之樹脂被覆金屬粒子時，由於粒子本身略呈白色，故而反射特性對於可見光之波長相依性較小，因此可使發光效率提高，且可使發光元件之發光色以原本之顏色反射。 Further, the light-reflective anisotropic conductive adhesive of the present invention contains light-reflective insulation Particles, therefore reflecting light. In particular, the light-reflective insulating particles are at least one inorganic particle selected from the group consisting of titanium oxide particles, boron nitride particles, zinc oxide particles, and alumina particles, or coated with scaly or spherical metal via an insulating resin. When the resin is coated with the metal particles on the surface of the particles, since the particles themselves are slightly white, the reflection characteristics are less dependent on the wavelength of visible light, so that the luminous efficiency can be improved and the luminescent color of the light-emitting element can be reflected in the original color.

又，進而，於使用經金屬材料被覆之核心粒子、及於其表面由氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子所形成之白色~灰色之光反射層而構成的光反射性導電粒子作為導電粒子時，由於該光反射性導電粒子本身呈現白色~灰色，故而反射特性對於可見光之波長相依性較小，因此可使發光效率進一步提高，且可使發光元件之發光色以原本之顏色反射。 Further, the light reflection is performed by using a core particle coated with a metal material and a white-grey light reflection layer formed of titanium oxide particles, boron nitride particles, zinc oxide particles or alumina particles on the surface thereof. When the conductive particles are used as the conductive particles, since the light-reflective conductive particles themselves are white to gray, the reflection characteristics are less dependent on the wavelength of visible light, so that the light-emitting efficiency can be further improved, and the light-emitting color of the light-emitting element can be made The original color reflection.

1‧‧‧核心粒子 1‧‧‧ core particles

2‧‧‧無機粒子 2‧‧‧Inorganic particles

3‧‧‧光反射層 3‧‧‧Light reflection layer

4‧‧‧熱塑性樹脂 4‧‧‧ thermoplastic resin

10、20‧‧‧光反射性導電粒子 10, 20‧‧‧Light reflective conductive particles

11‧‧‧熱硬化性樹脂組成物之硬化物 11‧‧‧ Hardened product of thermosetting resin composition

21‧‧‧基板 21‧‧‧Substrate

22‧‧‧連接端子 22‧‧‧Connecting terminal

23‧‧‧LED元件 23‧‧‧LED components

24‧‧‧n電極 24‧‧‧n electrode

25‧‧‧p電極 25‧‧‧p electrode

26‧‧‧凸塊 26‧‧‧Bumps

100‧‧‧光反射性異向性導電接著劑之硬化物 100‧‧‧ Hardened products of light-reflective anisotropic conductive adhesives

200‧‧‧發光裝置 200‧‧‧Lighting device

圖1A係光反射性異向性導電接著劑用之光反射性導電粒子之剖面圖。 Fig. 1A is a cross-sectional view showing light-reflective conductive particles for a light-reflective anisotropic conductive adhesive.

圖1B係光反射性異向性導電接著劑用之光反射性導電粒子之剖面圖。 Fig. 1B is a cross-sectional view showing light-reflective conductive particles for a light-reflective anisotropic conductive adhesive.

圖2係本發明之發光裝置之剖面圖。 Figure 2 is a cross-sectional view of a light-emitting device of the present invention.

圖3係先前之發光裝置之剖面圖。 Figure 3 is a cross-sectional view of a prior illuminating device.

圖4係先前之發光裝置之剖面圖。 Figure 4 is a cross-sectional view of a prior illuminating device.

本發明係一種光反射性異向性導電接著劑，其係用以將發光元件異向性導電連接於配線板，且含有熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子。首先，對作為黏合劑之熱硬化性樹脂組成物進行說明。 The present invention is a light-reflective anisotropic conductive adhesive for electrically connecting an anisotropic conductive material to a wiring board, and further comprising a thermosetting resin composition, conductive particles, and light-reflective insulating particles. First, a thermosetting resin composition as a binder will be described.

<熱硬化性樹脂組成物> <Thermosetting resin composition>

於本發明中，熱硬化性樹脂組成物含有由式(1)表示之二縮水甘油基異氰尿醯基改質聚矽氧烷及環氧樹脂用硬化劑。藉由含有由式(1)表示之二縮水甘油基異氰尿醯基改質聚矽氧烷，可防止光反射性異向性導電接著劑因熱或光而變色，並且實際應用上可實現充分之晶片剪切強度。 In the present invention, the thermosetting resin composition contains a diglycidyl isocyanurethane-based modified polyoxyalkylene represented by the formula (1) and a curing agent for an epoxy resin. By containing the diglycidyl isocyanurethane-based modified polyoxyalkylene represented by the formula (1), the light-reflective anisotropic conductive adhesive can be prevented from discoloring due to heat or light, and can be realized in practical use. Full wafer shear strength.

式(1)中，R為碳數1~6之低級烷基等烷基、或碳環式芳香族基、雜環式芳香族等芳基。作為烷基之較佳之具體例，可列舉甲基、乙基、丙基、異丙基、丁基、異丁基，作為特佳之烷基，可列舉甲基。又，作為芳基之較佳具體例，可列舉苯基。n為1~40之數，較佳為1~9之數，更佳為1或2之數。 In the formula (1), R is an alkyl group such as a lower alkyl group having 1 to 6 carbon atoms, or an aryl group such as a carbocyclic aromatic group or a heterocyclic aromatic group. Preferable examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, and an isobutyl group. A particularly preferred alkyl group is a methyl group. Moreover, as a preferable specific example of an aryl group, a phenyl group is mentioned. n is a number from 1 to 40, preferably from 1 to 9, more preferably from 1 or 2.

如以下之反應式所示，由式(1)表示之二縮水甘油基異氰尿醯基改質聚矽氧烷可藉由如下方式製造：於將式(a)之兩末端氫聚矽氧烷與式(b)之1-烯丙基-3,5-二縮水甘油基異氰尿酸酯均勻地混合後，在卡斯特(Karstedt)觸媒(1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷鉑(0)錯合物溶液)之存在下加熱至室溫~150℃。可藉由常用方法(濃縮處理、管柱處理等)自反應混合物單離式(1)之化合物。 As shown in the following reaction formula, the diglycidyl isocyanurethane-based modified polyoxyalkylene represented by the formula (1) can be produced by hydrogenating the both ends of the formula (a). The alkane is uniformly mixed with 1-allyl-3,5-diglycidyl isocyanurate of formula (b) after Karstedt catalyst (1,3-divinyl-1) Heating to room temperature ~ 150 ° C in the presence of 1,3,3-tetramethyldioxane platinum (0) complex solution). The compound of the formula (1) can be isolated from the reaction mixture by a usual method (concentration treatment, column treatment, etc.).

熱硬化性樹脂組成物除式(1)之二縮水甘油基異氰尿醯基改質聚矽氧烷以外，可於無損發明之效果之範圍內含有雜環系環氧化合物、脂環式環氧化合物或氫化環氧化合物等。 The thermosetting resin composition may contain a heterocyclic epoxy compound or an alicyclic ring in addition to the glycidyl isocyanurethane group modified polyoxane of the formula (1), insofar as the effect of the invention is not impaired. An oxygen compound or a hydrogenated epoxy compound or the like.

作為雜環系環氧化合物，可列舉具有三環之環氧化合物，例如可列舉1,3,5-三(2,3-環氧丙基)-1,3,5-三-2,4,6-(1H,3H,5H)-三酮(換言之，為三縮水甘油基異氰尿酸酯)。 As the heterocyclic epoxy compound, there are three Examples of the epoxy compound of the ring include 1,3,5-tris(2,3-epoxypropyl)-1,3,5-three. -2,4,6-(1H,3H,5H)-trione (in other words, triglycidyl isocyanurate).

作為脂環式環氧化合物，可較佳地列舉於分子內具有2個以上環氧基者。該等可為液狀，亦可為固體狀。具體而言，可列舉縮水甘油基六氫雙酚A、3,4-環氧環己烯基甲基-3',4'-環氧環己烯羧酸酯等。其中，就可對硬化物確保適於LED元件之構裝等之透光性、速硬化性亦優異之方面而言，可較佳地使用縮水甘油基六氫雙酚A、3,4-環氧環己烯基甲基-3',4'-環氧環己烯羧酸酯。 The alicyclic epoxy compound is preferably one having two or more epoxy groups in the molecule. These may be liquid or solid. Specific examples thereof include glycidyl hexahydrobisphenol A and 3,4-epoxycyclohexenylmethyl-3',4'-epoxycyclohexenecarboxylate. Among them, glycidyl hexahydrobisphenol A and 3,4-ring can be preferably used in terms of ensuring that the cured product is suitable for light-transmitting and quick-curing properties such as the structure of the LED element. Oxycyclohexenylmethyl-3',4'-epoxycyclohexene carboxylate.

作為氫化環氧化合物，可使用上述之雜環系環氧化合物或脂環式環氧化合物之氫化物、或其他公知之氫化環氧樹脂。 As the hydrogenated epoxy compound, a hydrogenated product of the above heterocyclic epoxy compound or alicyclic epoxy compound or other known hydrogenated epoxy resin can be used.

該等脂環式環氧化合物、雜環系環氧化合物或氫化環氧化合物相對於式(1)之二縮水甘油基異氰尿醯基改質聚矽氧烷，可單獨併用，亦可併用2種以上。又，除該等環氧化合物以外，只要無損本發明之效果， 則亦可併用其他環氧化合物。例如可列舉：使雙酚A、雙酚F、雙酚S、四甲基雙酚A、二芳基雙酚A、對苯二酚、鄰苯二酚、間苯二酚、甲酚、四溴雙酚A、三羥基聯苯、二苯甲酮、雙間苯二酚、雙酚六氟丙酮、四甲基雙酚A、四甲基雙酚F、三(羥基苯基)甲烷、聯二甲苯酚、苯酚酚醛清漆、甲酚酚醛清漆等多元酚與表氯醇反應而獲得之縮水甘油醚；使甘油、新戊二醇、乙二醇、丙二醇、丁二醇、己二醇、聚乙二醇、聚丙二醇等脂肪族多元醇與表氯醇反應而獲得之聚縮水甘油醚；使對羥基苯甲酸、β-羥基萘甲酸之類的羥基羧酸與表氯醇反應而獲得之縮水甘油醚酯；由鄰苯二甲酸、甲基鄰苯二甲酸、間苯二甲酸、對苯二甲酸、四氫鄰苯二甲酸、內亞甲基四氫鄰苯二甲酸(endomethylenetetrahydrophthalic acid)、內亞甲基六氫鄰苯二甲酸、1,2,4-苯三甲酸(trimellitic acid)、聚合脂肪酸之類的聚羧酸所獲得之聚縮水甘油酯；由胺基苯酚、胺基烷基苯酚獲得之縮水甘油基胺基縮水甘油醚；由胺基苯甲酸獲得之縮水甘油基胺基縮水甘油酯；由苯胺、甲苯胺、三溴苯胺、苯二甲基二胺(xylylenediamine)、二胺基環己烷、雙胺基甲基環己烷、4,4'-二胺基二苯基甲烷、4,4'-二胺基二苯基碸等獲得之縮水甘油胺；環氧化聚烯烴等公知之環氧樹脂類。 The alicyclic epoxy compound, the heterocyclic epoxy compound or the hydrogenated epoxy compound may be used alone or in combination with the diglycidyl isocyanurate-modified polyoxyalkylene of the formula (1). 2 or more types. Further, in addition to the epoxy compounds, as long as the effects of the present invention are not impaired, Other epoxy compounds can also be used in combination. For example, bisphenol A, bisphenol F, bisphenol S, tetramethyl bisphenol A, diaryl bisphenol A, hydroquinone, catechol, resorcin, cresol, and tetra Bromobisphenol A, trihydroxybiphenyl, benzophenone, bis resorcinol, bisphenol hexafluoroacetone, tetramethyl bisphenol A, tetramethyl bisphenol F, tris(hydroxyphenyl)methane, hydrazine Glycidyl ether obtained by reacting polyphenols such as xylenol, phenol novolac, cresol novolac and epichlorohydrin; glycerin, neopentyl glycol, ethylene glycol, propylene glycol, butanediol, hexanediol, poly a polyglycidyl ether obtained by reacting an aliphatic polyol such as ethylene glycol or polypropylene glycol with epichlorohydrin; and a shrinkage obtained by reacting a hydroxycarboxylic acid such as p-hydroxybenzoic acid or β-hydroxynaphthoic acid with epichlorohydrin Glycidyl ether ester; from phthalic acid, methyl phthalic acid, isophthalic acid, terephthalic acid, tetrahydrophthalic acid, endomethylenetetrahydrophthalic acid, Obtained from polycarboxylic acids such as methylene hexahydrophthalic acid, trimellitic acid, and polymeric fatty acids Glycidyl ester; glycidylaminoglycidyl ether obtained from aminophenol, aminoalkylphenol; glycidylaminoglycidyl ester obtained from aminobenzoic acid; from aniline, toluidine, tribromoaniline , xylylenediamine, diaminocyclohexane, bisaminomethylcyclohexane, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl A glycidylamine obtained by hydrazine or the like; a known epoxy resin such as an epoxidized polyolefin.

作為環氧樹脂用硬化劑，可使用公知之環氧樹脂用硬化劑。例如可自胺系硬化劑、聚胺系硬化劑、酸酐系硬化劑、咪唑系硬化劑、聚硫醇系硬化劑、聚硫醚(polysulfide)系硬化劑、三氟化硼-胺錯合物系硬化劑、雙氰胺、有機酸醯肼等中選擇而使用。其中，就透光性、耐熱性等觀點而言，可較佳地使用酸酐系硬化劑。 As the curing agent for the epoxy resin, a known curing agent for an epoxy resin can be used. For example, an amine-based curing agent, a polyamine-based curing agent, an acid-based curing agent, an imidazole-based curing agent, a polythiol-based curing agent, a polysulfide-based hardener, and a boron trifluoride-amine complex. It is selected and used as a curing agent, dicyandiamide, organic acid hydrazine or the like. Among them, an acid anhydride-based curing agent can be preferably used from the viewpoint of light transmittance, heat resistance and the like.

作為酸酐系硬化劑，可列舉：琥珀酸酐、鄰苯二甲酸酐、順 丁烯二酸酐、苯偏三酸酐(trimelliticanhydride)、焦蜜石酸酐(pyromelliticanhydride)、六氫鄰苯二甲酸酐、3-甲基-六氫鄰苯二甲酸酐、4-甲基-六氫鄰苯二甲酸酐、或4-甲基-六氫鄰苯二甲酸酐與六氫鄰苯二甲酸酐之混合物、四氫鄰苯二甲酸酐、甲基-四氫鄰苯二甲酸酐、耐地酸酐、甲基耐地酸酐(methyl nadic anhydride)、降莰烷-2,3-二羧酸酐(norbornane-2,3-dicarboxylic anhydride)、甲基降莰烷-2,3-二羧酸酐、甲基環己烯二羧酸酐等。 Examples of the acid anhydride-based curing agent include succinic anhydride, phthalic anhydride, and cis. Butenedic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, 3-methyl-hexahydrophthalic anhydride, 4-methyl-hexahydroortho Phthalic anhydride, or a mixture of 4-methyl-hexahydrophthalic anhydride and hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methyl-tetrahydrophthalic anhydride, ground resistance Anhydride, methyl nadic anhydride, norbornane-2,3-dicarboxylic anhydride, methylnorbornane-2,3-dicarboxylic anhydride, A A cyclohexene dicarboxylic anhydride or the like.

酸酐系硬化劑等環氧樹脂用硬化劑之於熱硬化性樹脂組成物中之調配量相對於由式(1)表示之二縮水甘油基異氰尿醯基改質聚矽氧烷100質量份，若過少，則有未參與聚合反應之由式(1)表示之二縮水甘油基異氰尿醯基改質聚矽氧烷之量變得過多之傾向，若過多，則有因剩餘硬化劑之影響而腐蝕被接著體材料之傾向，因此對應於上述n值較佳為40~120質量份，更佳為60~100質量份。 The amount of the curing agent for an epoxy resin such as an acid anhydride-based curing agent in the thermosetting resin composition is 100 parts by mass relative to the diglycidyl isocyanurethane-based modified polyoxane represented by the formula (1). If the amount is too small, the amount of the diglycidyl isocyanurethane-based polyoxymethane represented by the formula (1) which does not participate in the polymerization reaction tends to be excessive. If the amount is too large, there is a residual hardener. The influence on the adhering body material is affected, so that the value of n corresponding to the above n is preferably 40 to 120 parts by mass, more preferably 60 to 100 parts by mass.

為了使硬化反應順利地且以短時間完成，熱硬化性樹脂組成物可含有公知之硬化促進劑。作為較佳之硬化促進劑，可列舉四級鏻鹽系硬化促進劑或咪唑系硬化促進劑。具體而言，可列舉四級鏻之溴化鹽(「U-CAT5003」(商標)，SAN-APRO股份有限公司)、2-乙基-4-甲基咪唑等。尤其，作為酸酐系硬化劑用之硬化促進劑，可較佳地使用咪唑系硬化促進劑。於此情形時，關於咪唑系硬化促進劑之添加量，若過少，則有硬化不充分之傾向，若過多，則有熱硬化性樹脂組成物之硬化物因熱或光之作用而容易變色之傾向，因此相對於酸酐系硬化劑100質量份，咪唑系硬化促進劑較佳為0.60~3.00質量份，更佳為0.60~1.00質量份。 In order to allow the hardening reaction to be completed smoothly and in a short time, the thermosetting resin composition may contain a known hardening accelerator. As a preferable hardening accelerator, a quaternary phosphonium salt-based hardening accelerator or an imidazole-based hardening accelerator can be mentioned. Specific examples include a bromide salt of a quaternary phosphonium ("U-CAT5003" (trademark), SAN-APRO Co., Ltd.), 2-ethyl-4-methylimidazole, and the like. In particular, an imidazole-based hardening accelerator can be preferably used as the curing accelerator for the acid anhydride-based curing agent. In this case, when the amount of the imidazole-based hardening accelerator added is too small, the curing tends to be insufficient. When the amount is too large, the cured product of the thermosetting resin composition is easily discolored by the action of heat or light. The imidazole-based hardening accelerator is preferably from 0.60 to 3.00 parts by mass, more preferably from 0.60 to 1.00 parts by mass, per 100 parts by mass of the acid anhydride-based curing agent.

以上所說明之熱硬化性樹脂組成物較佳為儘可能地使用無色透明者。其原因在於，不會降低光反射性異向性導電接著劑中之光反射性導電粒子之光反射效率，並且不改變入射光之光色地使其反射。此處，所謂無色透明，意指光反射性異向性導電接著劑之硬化物對於波長380~780nm之可見光，光程長1mm之透光率(JIS K7105)為80%以上，較佳為90%以上。 The thermosetting resin composition described above is preferably one which is colorless and transparent as much as possible. This is because the light reflection efficiency of the light-reflective conductive particles in the light-reflective anisotropic conductive adhesive is not lowered, and the light color of the incident light is not changed. Here, the term "colorless and transparent" means a cured product of a light-reflective anisotropic conductive adhesive for a visible light having a wavelength of 380 to 780 nm, and a light transmittance (JIS K7105) having an optical path length of 1 mm is 80% or more, preferably 90. %the above.

<光反射性絕緣粒子> <Light Reflective Insulating Particles>

本發明之光反射性異向性導電接著劑含有之光反射性絕緣粒子係用以將入射至光反射性異向性導電接著劑之光反射至外部。 The light-reflective insulating conductive particles contained in the light-reflective anisotropic conductive adhesive of the present invention are used to reflect light incident on the light-reflective anisotropic conductive adhesive to the outside.

再者，具有光反射性之粒子包含：金屬粒子；對金屬粒子進行樹脂被覆而成之粒子；自然光下呈現灰色至白色之金屬氧化物、金屬氮化物、金屬硫化物等無機粒子；以無機粒子被覆樹脂核心粒子而成之粒子；以及無論粒子之材質而於其表面具有凹凸之粒子。然而，由於要求本發明中可使用之光反射性絕緣粒子顯示絕緣性之關係，故而該等粒子中不包含未經絕緣被覆之金屬粒子。又，不可使用金屬氧化物粒子中之如ITO(Indium Tin Oxides，氧化銦錫)般具有導電性者。又，即便為顯示光反射性且顯示絕緣性之無機粒子，亦不可使用如SiO2般其折射率低於所使用之熱硬化性樹脂組成物之折射率者。 Further, the light-reflecting particles include: metal particles; particles obtained by resin coating the metal particles; inorganic particles such as metal oxides, metal nitrides, and metal sulfides which are gray to white under natural light; Particles coated with resin core particles; and particles having irregularities on the surface regardless of the material of the particles. However, since the light-reflective insulating particles which can be used in the present invention are required to exhibit an insulating property, the particles do not include metal particles which are not covered with insulation. Further, it is not possible to use a metal oxide particle such as ITO (Indium Tin Oxides) which has conductivity. Further, even in the case of inorganic particles which exhibit light reflectivity and exhibit insulating properties, it is not possible to use a refractive index lower than that of the thermosetting resin composition to be used as in SiO 2 .

作為此種光反射性絕緣粒子之較佳之具體例，可列舉選自由氧化鈦(TiO2)粒子、氮化硼(BN)粒子、氧化鋅(ZnO)粒子及氧化鋁(Al2O3)粒子所組成之群中之至少一種無機粒子。其中，就高折射率之方面而言，較佳為使用TiO2。 Preferred specific examples of such light-reflective insulating particles include titanium oxide (TiO 2 ) particles, boron nitride (BN) particles, zinc oxide (ZnO) particles, and aluminum oxide (Al 2 O 3 ) particles. At least one inorganic particle in the group formed. Among them, in terms of high refractive index, TiO 2 is preferably used.

作為光反射性絕緣粒子之形狀，可為球狀、鱗片狀、不定形狀、針狀等，若考慮反射效率，則較佳為球狀、鱗片狀。又，作為其大小，當為球狀時，若過小則反射率降低，若過大則有阻礙以異向性導電粒子連接的傾向，因此較佳為0.02~20μm，更佳為0.2~1μm，當為鱗片狀時，長徑較佳為0.1~100μm，更佳為1~50μm，短徑較佳為0.01~10μm，更佳為0.1~5μm，厚度較佳為0.01~10μm，更佳為0.1~5μm。 The shape of the light-reflective insulating particles may be a spherical shape, a scale shape, an indefinite shape, or a needle shape. When considering the reflection efficiency, it is preferably spherical or scaly. Further, when the size is a spherical shape, the reflectance is too small, and if it is too small, the orientation tends to be restricted by the anisotropic conductive particles. Therefore, it is preferably 0.02 to 20 μm, more preferably 0.2 to 1 μm. In the case of scales, the long diameter is preferably 0.1 to 100 μm, more preferably 1 to 50 μm, and the short diameter is preferably 0.01 to 10 μm, more preferably 0.1 to 5 μm, and the thickness is preferably 0.01 to 10 μm, more preferably 0.1 to 0.1. 5 μm.

由無機粒子構成之光反射性絕緣粒子較佳為其折射率(JIS K7142)較佳為大於熱硬化性樹脂組成物之硬化物之折射率(JIS K7142)，更佳為大至少0.02左右。其原因在於，若折射率差較小，則該等之界面之反射效率降低。 The light-reflective insulating particles made of inorganic particles preferably have a refractive index (JIS K7142) larger than a refractive index (JIS K7142) of a cured product of the thermosetting resin composition, and more preferably at least about 0.02. The reason for this is that if the refractive index difference is small, the reflection efficiency of the interfaces is lowered.

作為光反射性絕緣粒子，可使用以上所說明之無機粒子，亦可使用以透明之絕緣性樹脂被覆鱗片狀或球狀金屬粒子表面之樹脂被覆金屬粒子。作為金屬粒子，可列舉鎳、銀、鋁等。作為粒子之形狀，可列舉無定型、球狀、鱗片狀、針狀等，其中，就光擴散效果之方面而言，較佳為球狀之形狀，就總反射效果之方面而言，較佳為鱗片狀之形狀。就光之反射率之方面而言，特佳者為鱗片狀銀粒子。 As the light-reflective insulating particles, the inorganic particles described above may be used, and the resin-coated metal particles may be coated with a transparent insulating resin covering the surface of the scaly or spherical metal particles. Examples of the metal particles include nickel, silver, aluminum, and the like. Examples of the shape of the particles include an amorphous shape, a spherical shape, a scaly shape, and a needle shape. Among them, a spherical shape is preferable in terms of a light diffusion effect, and it is preferable in terms of a total reflection effect. It is a scaly shape. In terms of the reflectance of light, the most preferred one is scaly silver particles.

作為光反射性絕緣粒子之樹脂被覆金屬粒子之大小亦因形狀而異，一般若過大則有阻礙以異向性導電粒子連接之虞，若過小則變得難以反射光，因此於球狀之情形時，粒徑較佳為0.1~30μm，更佳為0.2~10μm，於鱗片狀之情形時，長徑較佳為0.1~100μm，更佳為1~50μm且厚度較佳為0.01~10μm，更佳為0.1~5μm。此處，光反射性絕緣粒子之大小於經絕緣被覆之情形時為亦包含該絕緣被覆之大小。 The size of the resin-coated metal particles as the light-reflective insulating particles varies depending on the shape. Generally, if it is too large, the particles which are connected by the anisotropic conductive particles are hindered, and if they are too small, the light is hard to be reflected. Therefore, in the case of a spherical shape When the particle diameter is preferably 0.1 to 30 μm, more preferably 0.2 to 10 μm, and in the case of scales, the long diameter is preferably 0.1 to 100 μm, more preferably 1 to 50 μm, and the thickness is preferably 0.01 to 10 μm. Good is 0.1~5μm. Here, the size of the light-reflective insulating particles also includes the size of the insulating coating when it is covered by insulation.

作為此種樹脂被覆金屬粒子中之該樹脂，可使用各種絕緣性樹脂。就機械強度或透明性等方面而言，可較佳地利用丙烯酸系樹脂之硬化物。較佳為可列舉於過氧化苯甲醯等有機過氧化物等自由基起始劑之存在下，使甲基丙烯酸甲酯與甲基丙烯酸2-羥基乙酯進行自由基共聚合而成之樹脂。於此情形時，更佳為利用2,4-甲苯二異氰酸酯等異氰酸酯系交聯劑進行交聯。又，作為金屬粒子，較佳為預先利用矽烷偶合劑將γ-縮水甘油氧基或乙烯基等導入至金屬表面。 As the resin in the resin-coated metal particles, various insulating resins can be used. A cured product of an acrylic resin can be preferably used in terms of mechanical strength, transparency, and the like. Preferably, the resin obtained by radical copolymerization of methyl methacrylate and 2-hydroxyethyl methacrylate in the presence of a radical initiator such as an organic peroxide such as benzamidine peroxide is preferred. . In this case, it is more preferable to carry out crosslinking using an isocyanate crosslinking agent such as 2,4-toluene diisocyanate. Further, as the metal particles, it is preferred to introduce a γ-glycidoxy group, a vinyl group or the like onto the surface of the metal in advance using a decane coupling agent.

此種樹脂被覆金屬粒子例如可藉由如下方式製造：向甲苯等溶劑中投入金屬粒子及矽烷偶合劑，於室溫下攪拌約1小時後，投入自由基單體、自由基聚合起始劑及視需要投入之交聯劑，一面加溫至自由基聚合起始溫度一面攪拌。 The resin-coated metal particles can be produced, for example, by adding metal particles and a decane coupling agent to a solvent such as toluene, and stirring at room temperature for about 1 hour, and then introducing a radical monomer, a radical polymerization initiator, and The crosslinking agent to be supplied is stirred while being heated to the initial temperature of the radical polymerization.

以上所說明之光反射性絕緣粒子之於光反射性異向性導電接著劑中之調配量若過少則無法實現充分之光反射，又，若過多，則阻礙主要為所併用之導電粒子之連接，因此較佳為1~50體積%，更佳為5~25體積%。 When the amount of the light-reflective insulating particles described above in the light-reflective anisotropic conductive adhesive is too small, sufficient light reflection cannot be achieved, and if too large, the connection of the conductive particles mainly used together is inhibited. Therefore, it is preferably from 1 to 50% by volume, more preferably from 5 to 25% by volume.

<導電粒子> <conductive particles>

作為構成本發明之光反射性異向性導電接著劑之導電粒子，可利用先前用於異向性導電連接用之金屬粒子。例如，可列舉金、鎳、銅、銀、焊錫、鈀、鋁、其等之合金、其等之多層化物(例如、鍍鎳/金閃鍍敷(gold flash plating)物)等。其中，金、鎳、銅使導電粒子成為茶色，因此較其他金屬材料可更得到本發明之效果。 As the conductive particles constituting the light-reflective anisotropic conductive adhesive of the present invention, metal particles previously used for the anisotropic conductive connection can be used. Examples thereof include gold, nickel, copper, silver, solder, palladium, aluminum, alloys thereof, and the like (for example, nickel flash/gold flash plating). Among them, gold, nickel, and copper make the conductive particles brown, so that the effects of the present invention can be obtained more than other metal materials.

又，可使用以金屬材料被覆樹脂粒子之金屬被覆樹脂粒子作 為導電粒子。作為此種樹脂粒子，可列舉苯乙烯系樹脂粒子、苯并胍胺樹脂粒子、尼龍樹脂粒子等。作為以金屬材料被覆樹脂粒子之方法，亦可採用先前公知之方法，可利用非電解鍍敷法、電解鍍敷法等。又，所被覆之金屬材料之層厚為足以確保良好之連接可靠性之厚度，亦取決於樹脂粒子之粒徑或金屬之種類，通常為0.1~3μm。 Further, metal coated resin particles coated with a metal material as a metal material can be used. It is a conductive particle. Examples of such resin particles include styrene resin particles, benzoguanamine resin particles, and nylon resin particles. As a method of coating the resin particles with a metal material, a conventionally known method can be employed, and an electroless plating method, an electrolytic plating method, or the like can be used. Further, the thickness of the metal material to be coated is a thickness sufficient to ensure good connection reliability, and also depends on the particle diameter of the resin particles or the kind of the metal, and is usually 0.1 to 3 μm.

又，若樹脂粒子之粒徑過小，則產生導通不良，若過大，則有產生圖案間短路之傾向，因此較佳為1~20μm，更佳為3~10μm，特佳為3~5μm。於此情形時，作為核心粒子1之形狀較佳為球狀，亦可為薄片狀、橄欖球狀。 Further, when the particle diameter of the resin particles is too small, conduction failure occurs, and if it is too large, a short circuit between the patterns tends to occur. Therefore, it is preferably 1 to 20 μm, more preferably 3 to 10 μm, and particularly preferably 3 to 5 μm. In this case, the shape of the core particle 1 is preferably spherical, and may be in the form of a sheet or a football.

較佳之金屬被覆樹脂粒子為球狀之形狀，若其粒徑過大，則連接可靠性降低，因此較佳為1~20μm，更佳為3~10μm。 The metal-coated resin particles are preferably spherical in shape, and if the particle diameter is too large, the connection reliability is lowered, so that it is preferably 1 to 20 μm, more preferably 3 to 10 μm.

尤其於本發明中，較佳為對如上所述之導電粒子賦予光反射性，而製成光反射性導電粒子。圖1A、圖1B係此種光反射性導電粒子10、20之剖面圖。首先，自圖1A之光反射性導電粒子進行說明。 In particular, in the present invention, it is preferred to impart light reflectivity to the conductive particles as described above to form light-reflective conductive particles. 1A and 1B are cross-sectional views of such light-reflective conductive particles 10 and 20. First, the light-reflective conductive particles of Fig. 1A will be described.

光反射性導電粒子10係由經金屬材料被覆之核心粒子1、及於其表面由選自氧化鈦(TiO2)粒子、氮化硼(BN)粒子、氧化鋅(ZnO)粒子或氧化鋁(Al2O3)粒子中之至少一種無機粒子2所形成的光反射層3而構成。氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子係於太陽光下呈現白色之無機粒子。因此，由該等所形成之光反射層3呈現白色~灰色。所謂呈現白色~灰色，意指反射特性對於可見光之波長相依性較小，且容易反射可見光。 The light-reflective conductive particles 10 are composed of a core particle 1 coated with a metal material and a surface thereof selected from titanium oxide (TiO 2 ) particles, boron nitride (BN) particles, zinc oxide (ZnO) particles or aluminum oxide ( The light reflection layer 3 formed of at least one of the inorganic particles 2 of the Al 2 O 3 ) particles is formed. The titanium oxide particles, the boron nitride particles, the zinc oxide particles or the aluminum oxide particles are white inorganic particles which are white under sunlight. Therefore, the light reflecting layer 3 formed by the above exhibits a white to gray color. The so-called white to gray color means that the reflection characteristic is small in dependence on the wavelength of visible light, and is easy to reflect visible light.

再者氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子 中，於擔心硬化之異向性導電接著劑之熱硬化性樹脂組成物之硬化物發生光劣化之情形時，可較佳地使用對光劣化無觸媒性且折射率亦較高之氧化鋅。 Further, titanium oxide particles, boron nitride particles, zinc oxide particles or aluminum oxide particles In the case where the cured product of the thermosetting resin composition of the hardened anisotropic conductive adhesive is photodegraded, it is preferable to use zinc oxide which is non-catalytic to photodegradation and has a high refractive index. .

核心粒子1係用於異向性導電連接者，因此其表面由金屬材料構成。此處，作為表面由金屬材料被覆之態樣，如上所述，可列舉核心粒子1本身為金屬材料之態樣、或樹脂粒子表面由金屬材料被覆之態樣。 The core particles 1 are used for anisotropic conductive connectors, and thus the surface thereof is composed of a metal material. Here, as a state in which the surface is covered with a metal material, as described above, the core particle 1 itself is a metal material or the surface of the resin particle is covered with a metal material.

就與核心粒子1之粒徑之相對大小之觀點而言，若由無機粒子2所形成之光反射層3之層厚相對於核心粒子1之粒徑過小，則反射率之降低變得明顯，若過大則產生導通不良，因此較佳為0.5~50%，更佳為1~25%。 From the viewpoint of the relative size of the particle diameter of the core particle 1, when the layer thickness of the light reflection layer 3 formed of the inorganic particles 2 is too small with respect to the particle diameter of the core particle 1, the decrease in reflectance becomes remarkable. If it is too large, it may cause poor conduction, so it is preferably 0.5 to 50%, more preferably 1 to 25%.

又，於光反射性導電粒子10中，若構成光反射層3之無機粒子2之粒徑過小，則變得難以產生光反射現象，若過大，則有難以形成光反射層之傾向，因此較佳為0.02~4μm，更佳為0.1~1μm，特佳為0.2~0.5μm。於此情形時，就進行光反射之光之波長之觀點而言，為不使應反射之光(即發光元件發出之光)發生透射，無機粒子2之粒徑較佳為該光之波長之50%以上。於此情形時，作為無機粒子2之形狀，可列舉無定型、球狀、鱗片狀、針狀等，其中，就光擴散效果之方面而言，較佳為球狀之形狀，就總反射效果之方面而言，較佳為鱗片狀之形狀。 Further, in the light-reflective conductive particles 10, when the particle diameter of the inorganic particles 2 constituting the light-reflecting layer 3 is too small, light reflection phenomenon is less likely to occur, and if it is too large, it tends to be difficult to form a light-reflecting layer. Preferably, it is 0.02 to 4 μm, more preferably 0.1 to 1 μm, and particularly preferably 0.2 to 0.5 μm. In this case, from the viewpoint of the wavelength of the light reflected by the light, the particle diameter of the inorganic particles 2 is preferably the wavelength of the light so as not to transmit the light to be reflected (i.e., the light emitted from the light-emitting element). above 50. In this case, examples of the shape of the inorganic particles 2 include an amorphous shape, a spherical shape, a scaly shape, and a needle shape. Among them, in terms of a light diffusion effect, a spherical shape is preferable, and a total reflection effect is obtained. In terms of aspect, it is preferably a scaly shape.

圖1A之光反射性導電粒子10可利用藉由使大小粉末彼此物理碰撞而於大粒徑粒子之表面形成由小粒徑粒子構成之膜的公知之成膜技術(所謂機械融合法(mechanofusion method))而製造。於此情形時，無機粒子2係以沒入核心粒子1表面之金屬材料中之方式而固定，另一方面， 無機粒子彼此難以融合固定，因此無機粒子之單層構成光反射層3。因此認為於圖1A之情形時，光反射層3之層厚同等於或略微薄於無機粒子2之粒徑。 The light-reflective conductive particles 10 of FIG. 1A can utilize a known film forming technique of forming a film composed of small-sized particles on the surface of large-sized particles by physically colliding large and small powders with each other (so-called mechanofusion method). )) manufactured. In this case, the inorganic particles 2 are fixed in such a manner as to be immersed in the metal material on the surface of the core particle 1, and, on the other hand, Since the inorganic particles are difficult to be fused and fixed to each other, a single layer of the inorganic particles constitutes the light-reflecting layer 3. Therefore, it is considered that the layer thickness of the light-reflecting layer 3 is equal to or slightly thinner than the particle diameter of the inorganic particles 2 in the case of FIG. 1A.

其次，對圖1B之光反射性導電粒子20進行說明。於該光反射性導電粒子20中，光反射層3含有作為接著劑發揮功能之熱塑性樹脂4，藉由該熱塑性樹脂4亦使無機粒子2彼此固定，而使無機粒子2多層化(例如多層化為2層或3層)，就該方面而言，與圖1A之光反射性導電粒子10不同。藉由含有此種熱塑性樹脂4，光反射層3之機械強度提高，不易產生無機粒子之剝落等。 Next, the light-reflective conductive particles 20 of Fig. 1B will be described. In the light-reflective conductive particles 20, the light-reflecting layer 3 contains a thermoplastic resin 4 that functions as an adhesive. The thermoplastic resin 4 also fixes the inorganic particles 2 to each other, thereby multilayering the inorganic particles 2 (for example, multilayering). It is 2 or 3 layers, and in this respect, it is different from the light-reflective conductive particle 10 of FIG. 1A. By including such a thermoplastic resin 4, the mechanical strength of the light-reflecting layer 3 is improved, and peeling of the inorganic particles or the like is less likely to occur.

作為熱塑性樹脂4，考慮到低環境負荷，可較佳地使用無鹵素之熱塑性樹脂，例如可較佳地使用聚乙烯、聚丙烯等聚烯烴或聚苯乙烯、丙烯酸系樹脂等。 As the thermoplastic resin 4, a halogen-free thermoplastic resin can be preferably used in view of low environmental load. For example, polyolefin such as polyethylene or polypropylene, polystyrene, acrylic resin or the like can be preferably used.

此種光反射性導電粒子20亦可藉由機械融合法製造。應用於機械融合法之熱塑性樹脂4之粒徑若過小，則接著功能降低，若過大，則變得難以附著於核心粒子1，因此較佳為0.02~4μm，更佳為0.1~1μm。又，此種熱塑性樹脂4之調配量若過少則接著功能降低，若過多則形成粒子之凝集體，因此相對於無機粒子2之100質量份，較佳為0.2~500質量份，更佳為4~25質量份。 Such light-reflective conductive particles 20 can also be produced by a mechanical fusion method. When the particle size of the thermoplastic resin 4 applied to the mechanical fusion method is too small, the function is lowered, and if it is too large, it becomes difficult to adhere to the core particle 1, and therefore it is preferably 0.02 to 4 μm, more preferably 0.1 to 1 μm. In addition, when the amount of the thermoplastic resin 4 is too small, the function is lowered. If the amount is too large, the aggregate of the particles is formed. Therefore, it is preferably 0.2 to 500 parts by mass, more preferably 4 parts by mass based on 100 parts by mass of the inorganic particles 2 . ~25 parts by mass.

本發明之光反射性異向性導電接著劑中之光反射性導電粒子等導電粒子之調配量若過少，則有產生導通不良之傾向，若過多，則有產生圖案間短路之傾向，因此相對於熱硬化性樹脂組成物100質量份，較佳為1~100質量份，更佳為10~50質量份。 When the amount of the conductive particles such as the light-reflective conductive particles in the light-reflective anisotropic conductive adhesive of the present invention is too small, conduction failure tends to occur, and if too large, there is a tendency for a short circuit between the patterns. The amount of the thermosetting resin composition is preferably from 1 to 100 parts by mass, more preferably from 10 to 50 parts by mass, per 100 parts by mass.

<光反射性異向性導電接著劑之製造> <Manufacture of light-reflective anisotropic conductive adhesive>

本發明之光反射性異向性導電接著劑可藉由按照常用方法將以上說明之光反射性絕緣粒子、導電粒子及熱硬化性樹脂組成物均勻地混合而製造。又，於製成光反射性異向性導電膜之情形時，只要將該等與甲苯等溶劑一併分散混合，以製成所期望之厚度之方式塗佈於經剝離處理之PET膜上，於約80℃左右之溫度下進行乾燥即可。 The light-reflective anisotropic conductive adhesive of the present invention can be produced by uniformly mixing the above-described light-reflective insulating particles, conductive particles, and thermosetting resin composition in accordance with a usual method. In the case where the light-reflective anisotropic conductive film is formed, it is applied to the peel-treated PET film so as to be uniformly dispersed and mixed with a solvent such as toluene to obtain a desired thickness. It can be dried at a temperature of about 80 ° C or so.

<光反射性異向性導電接著劑之反射特性> <Reflective characteristics of light-reflective anisotropic conductive adhesive>

為提高發光元件之發光效率，本發明之光反射性異向性導電接著劑之反射特性較理想為光反射性異向性導電接著劑之硬化物對於波長450nm光之反射率(JIS K7105)為至少30%。為形成此種反射率，只要適當調整所使用之光反射性導電粒子之反射特性或調配量、熱硬化性樹脂組成物之調配組成等即可。通常存在只要增加反射特性良好之光反射性導電粒子之調配量，則反射率亦增大之傾向。 In order to improve the luminous efficiency of the light-emitting element, the reflective property of the light-reflective anisotropic conductive adhesive of the present invention is preferably such that the cured product of the light-reflective anisotropic conductive adhesive has a reflectance for light having a wavelength of 450 nm (JIS K7105). At least 30%. In order to form such a reflectance, the reflection characteristics or the amount of the light-reflective conductive particles to be used, the blending composition of the thermosetting resin composition, and the like may be appropriately adjusted. In general, there is a tendency that the reflectance also increases as long as the amount of the light-reflective conductive particles having good reflection characteristics is increased.

又，光反射性異向性導電接著劑之反射特性亦可根據折射率之觀點而評價。即，其原因在於，若其硬化物之折射率大於導電粒子及光反射性絕緣粒子除外之熱硬化性樹脂組成物之硬化物之折射率，則光反射性絕緣粒子與包圍其之熱硬化性樹脂組成物之硬化物的界面之光反射量增大。具體而言，較理想為自光反射性粒子之折射率(JIS K7142)減去熱硬化性樹脂組成物之硬化物之折射率(JIS K7142)之差較佳為0.02以上，更佳為0.2以上。再者，通常以環氧樹脂作為主體之熱硬化性樹脂組成物之折射率約為1.5。 Further, the reflection characteristics of the light-reflective anisotropic conductive adhesive can also be evaluated from the viewpoint of the refractive index. That is, the reason is that if the refractive index of the cured product is larger than the refractive index of the cured product of the thermosetting resin composition excluding the conductive particles and the light-reflective insulating particles, the light-reflective insulating particles and the thermosetting property surrounding the same The amount of light reflection at the interface of the cured product of the resin composition increases. Specifically, the difference between the refractive index (JIS K7142) of the thermally curable resin composition and the refractive index (JIS K7142) of the cured product of the thermosetting resin composition is preferably 0.02 or more, and more preferably 0.2 or more. . Further, the thermosetting resin composition mainly composed of an epoxy resin has a refractive index of about 1.5.

<發光裝置> <Lighting device>

其次，一面參照圖2一面對本發明之發光裝置進行說明。發光裝置200係於基板21上之連接端子22與分別形成為發光元件之LED元件23之n電極24及p電極25的連接用凸塊26之間塗佈上述本發明之光反射性異向性導電接著劑，而覆晶構裝構裝基板21與LED元件23的發光裝置。此處，光反射性異向性導電接著劑之硬化物100係使光反射性絕緣粒子及導電粒子(較佳為光反射性導電粒子10)分散於熱硬化性樹脂組成物之硬化物11中而成者。再者，視需要亦可以覆蓋LED元件23之整體之方式利用透明鑄模樹脂進行密封。又，亦可與先前同樣地於LED元件23設置光反射層。 Next, a description will be given of a light-emitting device of the present invention with reference to FIG. The light-emitting device 200 is coated with the light-reflective anisotropy of the present invention between the connection terminal 22 on the substrate 21 and the connection bumps 26 of the n-electrode 24 and the p-electrode 25 of the LED element 23 respectively formed as light-emitting elements. The conductive adhesive is used to form a light-emitting device that mounts the substrate 21 and the LED element 23. Here, the cured product 100 of the light-reflective anisotropic conductive adhesive is such that the light-reflective insulating particles and the conductive particles (preferably the light-reflective conductive particles 10) are dispersed in the cured product 11 of the thermosetting resin composition. Founder. Further, it may be sealed by a transparent mold resin in such a manner as to cover the entirety of the LED element 23. Further, a light reflection layer may be provided on the LED element 23 as in the prior art.

於以此方式構成之發光裝置200中，LED元件23所發出之光中朝向基板21側發出之光係由光反射性異向性導電接著劑之硬化物100中之光反射性絕緣粒子及視情形之光反射性導電粒子10反射，自LED元件23之上表面出射。因此，可防止發光效率之降低。 In the light-emitting device 200 configured in this manner, the light emitted from the LED element 23 toward the substrate 21 side is light-reflective insulating particles and light in the cured product 100 of the light-reflective anisotropic conductive adhesive. In the case where the light-reflective conductive particles 10 are reflected, they are emitted from the upper surface of the LED element 23. Therefore, the decrease in luminous efficiency can be prevented.

本發明之發光裝置200中除光反射性異向性導電接著劑以外之構成(LED元件23、凸塊26、基板21、連接端子22等)可設為與先前之發光裝置之構成相同。又，本發明之發光裝置200除使用本發明之光反射性異向性導電接著劑以外，可利用先前之異向性導電連接技術而製造。再者，作為發光元件，除LED元件以外，可於無損本發明之效果之範圍內應用公知之發光元件。 The configuration of the light-emitting device 200 of the present invention other than the light-reflective anisotropic conductive adhesive (the LED element 23, the bump 26, the substrate 21, the connection terminal 22, and the like) can be set to be the same as that of the conventional light-emitting device. Further, the light-emitting device 200 of the present invention can be produced by using the conventional anisotropic conductive connection technique in addition to the light-reflective anisotropic conductive adhesive of the present invention. Further, as the light-emitting element, in addition to the LED element, a known light-emitting element can be applied without departing from the effects of the present invention.

[實施例] [Examples]

參考例(二縮水甘油基異氰尿醯基改質聚矽氧烷之製造) Reference Example (Manufacture of diglycidyl isocyanurate-based modified polyoxyalkylene)

於氮氣流中，向具備回流冷卻管及磁性攪拌子之100ml三口燒瓶中投入28.12g(100.00mmol)1-烯丙基-3,5-二縮水甘油基異氰尿酸酯(MADGIC， 四國化成工業股份有限公司)、及11.31g(40.02mmol)1,1,3,3,5,5,7,7-四甲基矽氧烷(SIO6702.0，Gelest Inc.)，攪拌混合物直至於80℃下均勻地熔融。繼而，於該熔融混合物中添加2%Karstedt觸媒溶液(二甲苯溶液)15μL，一面攪拌一面加熱至100℃為止，熔融混合物之溫度達到100℃後，將該溫度保持9小時，使1-烯丙基-3,5-二縮水甘油基異氰尿酸酯與1,1,3,3,5,5,7,7-四甲基矽氧烷進行反應。 Into a 100 ml three-necked flask equipped with a reflux cooling tube and a magnetic stirrer, 28.12 g (100.00 mmol) of 1-allyl-3,5-diglycidyl isocyanurate (MADGIC) was placed in a nitrogen stream. Shikoku Chemical Industry Co., Ltd.), and 11.31g (40.02mmol) 1,1,3,3,5,5,7,7-tetramethylphosphonane (SIO6702.0, Gelest Inc.), stirred mixture It melted uniformly until it was 80 °C. Then, 15 μL of a 2% Karstedt catalyst solution (xylene solution) was added to the molten mixture, and the mixture was heated to 100 ° C while stirring. After the temperature of the molten mixture reached 100 ° C, the temperature was maintained for 9 hours to cause 1-ene. Propyl-3,5-diglycidyl isocyanurate is reacted with 1,1,3,3,5,5,7,7-tetramethyloxirane.

反應結束後，冷卻反應混合物，將未反應單體於減壓下(150℃/0.1kPa)蒸餾去除，藉由管柱層析法(載體：矽膠，溶出液：乙酸乙酯/己烷混合溶劑)將殘渣進行處理，藉此獲得著色較少之式(1a)之二縮水甘油基異氰尿醯基改質聚矽氧烷。 After completion of the reaction, the reaction mixture was cooled, and the unreacted monomer was distilled off under reduced pressure (150 ° C / 0.1 kPa) by column chromatography (carrier: silicone, eluate: ethyl acetate / hexane mixed solvent) The residue is treated to obtain a condensed polyglycidyl isocyanurate-modified polyoxymethane of the formula (1a) which is less colored.

實施例1-2、比較例1-3 Example 1-2, Comparative Example 1-3

藉由將表1所示之調配組成之成分均勻地混合而製備光反射性異向性導電接著劑。 A light-reflective anisotropic conductive adhesive was prepared by uniformly mixing the components of the compounding composition shown in Table 1.

再者，於實施例1-2及比較例1中，以環氧基/酸酐之官能基數之比成為1/1.1之方式調配環氧化合物與酸酐系硬化劑。又，比較例2之異向性導電接著劑係於二液硬化型二甲基聚矽氧樹脂(IVS4742，邁圖高新材料日本公司)中調配有光反射性絕緣粒子及導電粒子者，比較例3之異 向性導電接著劑係於二液硬化型苯基聚矽氧樹脂(SCR-1012，信越化學工業股份有限公司)中調配有光反射性絕緣粒子及導電粒子者。 Further, in Example 1-2 and Comparative Example 1, an epoxy compound and an acid anhydride-based curing agent were blended so that the ratio of the number of functional groups of the epoxy group/anhydride was 1/1.1. Further, the anisotropic conductive adhesive of Comparative Example 2 was prepared by disposing light-reflective insulating particles and conductive particles in a two-liquid-hardening type dimethyl polyfluorene resin (IVS4742, Momentive Advanced Materials Japan Co., Ltd.), and a comparative example. 3 different The directional conductive adhesive is one in which a light-reflective insulating particle and a conductive particle are blended in a two-liquid hardening type phenyl polyoxynene resin (SCR-1012, Shin-Etsu Chemical Co., Ltd.).

(評價) (Evaluation)

如以下說明般測定所獲得之光反射性異向性導電接著劑之晶片剪切強度。又，如以下說明般對自光反射性異向性導電接著劑中去除光反射性絕緣粒子及導電粒子後之剩餘之熱硬化性樹脂組成物進行耐熱試驗及耐熱光試驗。將所獲得之結果示於表2。 The wafer shear strength of the obtained light-reflective anisotropic conductive adhesive was measured as described below. In addition, the heat-hardenable resin composition which removed the light-reflective insulating particle and the conductive particle from the light-reflective anisotropic conductive adhesive was subjected to a heat resistance test and a heat-resistant light test as described below. The results obtained are shown in Table 2.

<晶片剪切強度試驗> <Wab Shear Strength Test>

於具有形成有金凸塊(高10μm，直徑80μm，間距190μm)之10μm厚之純銀電極的LED用玻璃環氧基板(特訂品，關西電子工業股份有限公司)上，以直徑成為4mm之方式塗佈硬化性樹脂組成物，於此處載置0.3mm見方之覆晶型LED元件(GM35R460G，昭和電工股份有限公司)，以覆晶型LED元件成為表側之方式將玻璃環氧基板放置於保持為80℃之加熱板， 加熱2分鐘而將LED元件暫時固定於LED用玻璃環氧基板。於熱壓接裝置將暫時固定有該LED元件之LED用玻璃環氧基板加以利用，一面對LED元件施加80gf/chip之壓力一面於230℃下進行30秒鐘熱壓接處理，藉此製作於LED用玻璃環氧基板構裝有LED元件之LED裝置。於使用實施例1或比較例1之光反射性異向性導電接著劑而製作之LED裝置之情形時，熱壓接處理後進而進行260℃、20秒鐘之回焊處理。 On a glass epoxy substrate for LEDs (special order, Kansai Electronics Industry Co., Ltd.) having a 10 μm-thick pure silver electrode formed with gold bumps (10 μm in height, 80 μm in diameter, and 190 μm in pitch), the diameter is 4 mm. In the case of coating a curable resin composition, a flip-chip type LED element (GM35R460G, Showa Denko Co., Ltd.) of 0.3 mm square is placed thereon, and a glass epoxy substrate is placed in a state in which the flip chip type LED element is on the front side. a heating plate of 80 ° C, The LED element was temporarily fixed to the glass epoxy substrate for LEDs by heating for 2 minutes. In the thermocompression bonding apparatus, a glass epoxy substrate for LEDs in which the LED element is temporarily fixed is used, and a thermocompression bonding process is performed at 230 ° C for 30 seconds while applying a pressure of 80 gf/chip to the LED element. An LED device in which an LED element is mounted on a glass epoxy substrate for LED. In the case of the LED device produced by using the light-reflective anisotropic conductive adhesive of Example 1 or Comparative Example 1, after the thermocompression bonding treatment, a reflow process of 260 ° C for 20 seconds was further performed.

對以此方式製作之LED裝置測定晶片剪切強度(gf/chip)。於實際應用中，晶片剪切強度較理想為至少200gf/chip，較佳為250gf/chip以上。 The wafer shear strength (gf/chip) was measured for the LED device fabricated in this manner. In practical applications, the wafer shear strength is desirably at least 200 gf/chip, preferably 250 gf/chip or more.

<耐熱試驗> <heat resistance test>

以四角配置有高度1mm之間隔柱之2片鋁平板(長100mm×寬50.0mm×厚0.500mm)夾持熱硬化性樹脂組成物，關於實施例1及比較例1之熱硬化性樹脂組成物，首先於120℃下加熱30分鐘，繼而於140℃下加熱1小時，藉此製作硬化樹脂片材。又，關於比較例2及3之熱硬化性樹脂組成物，首先於80℃下加熱1小時，繼而於150℃下加熱2小時，藉此製作硬化樹脂片材。 The thermosetting resin composition of Example 1 and Comparative Example 1 was sandwiched between two aluminum flat plates (length 100 mm × width 50.0 mm × thickness 0.500 mm) in which spacers having a height of 1 mm were arranged at four corners. First, it was heated at 120 ° C for 30 minutes, and then heated at 140 ° C for 1 hour, thereby producing a hardened resin sheet. Further, the thermosetting resin compositions of Comparative Examples 2 and 3 were first heated at 80 ° C for 1 hour, and then heated at 150 ° C for 2 hours to prepare a cured resin sheet.

將所獲得之硬化樹脂片材於設定為150℃之烘箱內放置1000小時，使用分光測色計(CM-3600d，Konica Minolta股份有限公司)測定放置前後之分光特性(L*、a*、b*)，自所獲得之測定值計算色差(△E)。於實際應用中，△E較理想為35以下。 The obtained hardened resin sheet was placed in an oven set at 150 ° C for 1,000 hours, and the spectral characteristics before and after standing (L*, a*, b) were measured using a spectrophotometer (CM-3600d, Konica Minolta Co., Ltd.). *), the color difference (ΔE) is calculated from the measured values obtained. In practical applications, ΔE is preferably less than 35.

<耐熱光試驗> <heat-resistant light test>

製作與供於耐熱試驗之硬化樹脂片材相同之硬化樹脂片材，將其於設 定為溫度120℃、光強度16mW/cm2之熱光試驗機(SUPER WIN MINI，DAIPLA WINTES股份有限公司；使用金屬鹵化物燈)內放置1000小時，使用分光測色計(CM-3600d，Konica Minolta股份有限公司)測定放置前後之分光特性(L*、a*、b*)，自所獲得之測定值計算色差(△E)。於實際應用中，△E較理想為20以下。 A cured resin sheet having the same hardness as that of the cured resin sheet for heat resistance test was prepared, and was set to a thermo-optic tester (SUPER WIN MINI, DAIPLA WINTES Co., Ltd.; set at a temperature of 120 ° C and a light intensity of 16 mW/cm 2 ; The metal halide lamp was placed in a metal halide lamp for 1000 hours, and the spectroscopic characteristics (L*, a*, b*) before and after the placement were measured using a spectrophotometer (CM-3600d, Konica Minolta Co., Ltd.), and the measured values were calculated. Color difference (ΔE). In practical applications, ΔE is preferably 20 or less.

自表2明白，實施例1及2之光反射性異向性導電接著劑之晶片剪切強度、耐熱試驗及耐熱光試驗之結果均為實際應用上較佳者，但於比較例1之情形時，由於使用熱硬化性環氧樹脂組成物，因此雖關於晶片剪切強度，獲得較佳之結果，但由於未使用式(1a)之二縮水甘油基異氰尿醯基改質聚矽氧烷，因此關於耐熱試驗，未獲得能夠滿足之結果。 It is understood from Table 2 that the results of the wafer shear strength, heat resistance test and heat resistance test of the light-reflective anisotropic conductive adhesives of Examples 1 and 2 are all practically preferable, but in the case of Comparative Example 1. At the time, since a thermosetting epoxy resin composition is used, although a preferable result is obtained with respect to the shear strength of the wafer, since the diglycidyl isocyanurethane-based modified polyoxyalkylene of the formula (1a) is not used. Therefore, regarding the heat resistance test, the results that can be satisfied have not been obtained.

再者，關於比較例2及3，不僅未使用式(1a)之二縮水甘油基異氰尿醯基改質聚矽氧烷，且未使用熱硬化性環氧樹脂組成物，因此晶片剪切強度明顯較低，甚至無法進行耐熱試驗、耐熱光試驗。 Further, regarding Comparative Examples 2 and 3, not only the diglycidyl isocyanurethane-based modified polyoxyalkylene of the formula (1a) but also the thermosetting epoxy resin composition was not used, so the wafer was cut. The strength is significantly lower, and even the heat resistance test and the heat resistance test cannot be performed.

[產業上之可利用性] [Industrial availability]

本發明之光反射性異向性導電接著劑係於使用異向性導電接著劑將發光二極體(LED)元件等發光元件覆晶構裝於配線板而製造發光裝置時，即使未於發光元件設置導致製造成本增加之光反射層，亦可不使 發光效率降低。而且，亦可較高地維持晶片剪切強度，耐熱性、耐熱光性亦優異。由此，本發明之光反射性異向性導電接著劑於覆晶構裝LED元件時較為有用。 The light-reflective anisotropic conductive adhesive of the present invention is used when a light-emitting device such as a light-emitting diode (LED) device is laminated on a wiring board using an anisotropic conductive adhesive to produce a light-emitting device, even if it is not illuminated. Component placement results in a light-reflecting layer with increased manufacturing costs, or The luminous efficiency is lowered. Further, the wafer shear strength can be maintained high, and the heat resistance and heat resistance are also excellent. Thus, the light-reflective anisotropic conductive adhesive of the present invention is useful for flip-chip mounting of LED elements.

10‧‧‧光反射性導電粒子 10‧‧‧Light reflective conductive particles

11‧‧‧熱硬化性樹脂組成物之硬化物 11‧‧‧ Hardened product of thermosetting resin composition

21‧‧‧基板 21‧‧‧Substrate

22‧‧‧連接端子 22‧‧‧Connecting terminal

23‧‧‧LED元件 23‧‧‧LED components

24‧‧‧n電極 24‧‧‧n electrode

25‧‧‧p電極 25‧‧‧p electrode

26‧‧‧凸塊 26‧‧‧Bumps

100‧‧‧光反射性異向性導電接著劑之硬化物 100‧‧‧ Hardened products of light-reflective anisotropic conductive adhesives

200‧‧‧發光裝置 200‧‧‧Lighting device

Claims (14)

一種光反射性異向性導電接著劑，其係用以將發光元件異向性導電連接於配線板，其特徵在於：含有熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子，熱硬化性樹脂組成物含有由式(1)表示之二縮水甘油基異氰尿醯基(diglycidylisocyanuryl)改質聚矽氧烷及環氧樹脂用硬化劑； (式中，R為烷基或芳基，n為1~40之數)。 A light-reflective anisotropic conductive adhesive for connecting an anisotropic conductive connection of a light-emitting element to a wiring board, comprising: a thermosetting resin composition, conductive particles, and light-reflective insulating particles, and thermosetting The resin composition contains a diglycidylisocyanuryl modified polyoxyalkylene represented by the formula (1) and a hardener for an epoxy resin; (wherein R is an alkyl group or an aryl group, and n is a number from 1 to 40). 如申請專利範圍第1項之光反射性異向性導電接著劑，其中R為甲基，n為1~9之數。 A light-reflective anisotropic conductive adhesive according to the first aspect of the invention, wherein R is a methyl group and n is a number from 1 to 9. 如申請專利範圍第1或2項之光反射性異向性導電接著劑，其中熱硬化性樹脂組成物相對於式(1)之二縮水甘油基異氰尿醯基改質聚矽氧烷100質量份，含有環氧樹脂用硬化劑40~120質量份。 The light-reflective anisotropic conductive adhesive according to claim 1 or 2, wherein the thermosetting resin composition is modified with the glycidyl isocyanurethane-based modified polyoxane 100 of the formula (1) The mass part contains 40 to 120 parts by mass of a curing agent for epoxy resin. 如申請專利範圍第1至3項中任一項之光反射性異向性導電接著劑，其中環氧樹脂用硬化劑為酸酐系硬化劑。 The light-reflective anisotropic conductive adhesive according to any one of claims 1 to 3, wherein the hardener for epoxy resin is an acid anhydride-based hardener. 如申請專利範圍第4項之光反射性異向性導電接著劑，其中熱硬化性樹脂組成物進而含有咪唑系硬化促進劑。 The light-reflective anisotropic conductive adhesive according to the fourth aspect of the invention, wherein the thermosetting resin composition further contains an imidazole-based hardening accelerator. 如申請專利範圍第5項之光反射性異向性導電接著劑，其中熱硬化性樹脂組成物相對於酸酐系硬化劑100質量份，含有咪唑系硬化促進劑0.60~3.00質量份。 The light-reflective anisotropic conductive adhesive according to the fifth aspect of the invention, wherein the thermosetting resin composition contains 0.60 to 3.00 parts by mass of the imidazole-based hardening accelerator with respect to 100 parts by mass of the acid anhydride-based curing agent. 如申請專利範圍第1至6項中任一項之光反射性異向性導電接著劑，其中光反射性絕緣粒子係選自由氧化鈦粒子、氮化硼粒子、氧化鋅粒子及氧化鋁粒子所組成之群中之至少一種無機粒子。 The light-reflective anisotropic conductive adhesive according to any one of claims 1 to 6, wherein the light-reflective insulating particles are selected from the group consisting of titanium oxide particles, boron nitride particles, zinc oxide particles, and alumina particles. At least one inorganic particle in the group consisting of. 如申請專利範圍第1至7項中任一項之光反射性異向性導電接著劑，其中光反射性絕緣粒子之折射率(JIS K7142)大於熱硬化性樹脂組成物之硬化物之折射率(JIS K7142)。 The light-reflective anisotropic conductive adhesive according to any one of claims 1 to 7, wherein the refractive index of the light-reflective insulating particles (JIS K7142) is larger than the refractive index of the cured product of the thermosetting resin composition (JIS K7142). 如申請專利範圍第1至8項中任一項之光反射性異向性導電接著劑，其中光反射性絕緣粒子為經絕緣性樹脂被覆鱗片狀或球狀金屬粒子表面之樹脂被覆金屬粒子。 The light-reflective anisotropic conductive adhesive according to any one of claims 1 to 8, wherein the light-reflective insulating particles are resin-coated metal particles coated with a surface of a scaly or spherical metal particle with an insulating resin. 如申請專利範圍第1至9項中任一項之光反射性異向性導電接著劑，其中光反射性異向性導電接著劑含有1~50體積%之光反射性絕緣粒子。 The light-reflective anisotropic conductive adhesive according to any one of claims 1 to 9, wherein the light-reflective anisotropic conductive adhesive contains 1 to 50% by volume of light-reflective insulating particles. 如申請專利範圍第1至10項中任一項之光反射性異向性導電接著劑，其中導電粒子係經金屬材料被覆之核心粒子及光反射層所構成的光反射性導電粒子，該光反射層係於該核心粒子表面由選自氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子中之至少一種無機粒子所形成。 The light-reflective anisotropic conductive adhesive according to any one of claims 1 to 10, wherein the conductive particles are light-reflective conductive particles composed of a core material coated with a metal material and a light-reflecting layer, the light The reflective layer is formed on the surface of the core particle by at least one inorganic particle selected from the group consisting of titanium oxide particles, boron nitride particles, zinc oxide particles, and alumina particles. 如申請專利範圍第11項之光反射性異向性導電接著劑，其中相對於熱硬化性樹脂組成物100質量份之光反射性導電粒子之調配量為1~100質量份。 The light-reflective anisotropic conductive adhesive according to the eleventh aspect of the invention, wherein the light-reflective conductive particles are contained in an amount of from 1 to 100 parts by mass based on 100 parts by mass of the thermosetting resin composition. 一種發光裝置，其係藉由申請專利範圍第1至12項中任一項之光反射性異向性導電接著劑，而將發光元件以覆晶方式構裝於配線板而成。 A light-emitting device obtained by laminating a light-emitting element to a wiring board by a light-reflective anisotropic conductive adhesive according to any one of claims 1 to 12. 如申請專利範圍第13項之發光裝置，其中發光元件為發光二極體。 The illuminating device of claim 13, wherein the illuminating element is a light emitting diode.
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