TW201142506A - Negative photosensitive resin composition, protective film and touch panel element using the same - Google Patents

Negative photosensitive resin composition, protective film and touch panel element using the same Download PDF

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TW201142506A
TW201142506A TW100112449A TW100112449A TW201142506A TW 201142506 A TW201142506 A TW 201142506A TW 100112449 A TW100112449 A TW 100112449A TW 100112449 A TW100112449 A TW 100112449A TW 201142506 A TW201142506 A TW 201142506A
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resin composition
negative photosensitive
photosensitive resin
rti
solution
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TW100112449A
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Chinese (zh)
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TWI536105B (en
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Hitoshi Araki
Mitsuhito Suwa
Toru Okazawa
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Toray Industries
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/22Absorbing filters
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A negative photosensitive resin composition contains an alkali-soluble resin (A), a photopolymerization initiator (B), a polyfunctional monomer (C) and a zirconium compound (D). The carboxylic acid equivalent weight of the alkali-soluble resin (A) is 200 g/mol or more and is 1,400 g/mol or less. Provided is the negative photosensitive resin composition which is alkali developable, has excellent pattern workability, and can be cured by UV curing and thermal curing so as to obtain a hardened film having high hardness, high transparancy and excellent heat and humidity resistance.

Description

201142506 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種負型感光性樹脂組成物、使用其 之保護膜及觸控面板構件。 ' 【先前技術】 於現在,硬塗材料之用途涉及許多方面,例如可用以 提高汽車零件、化妝品等之容器、薄板、薄膜、光碟、薄 型顯示器等之表面硬度。硬塗材料所要求之特性除了硬 度、耐擦傷性以外,可列舉耐熱性、耐候性、接著性等。 硬塗材料之代表例有自由基聚合型之uv硬化型硬塗 (例如參照非專利文獻〇’其構成為含有聚合性基之寡$ 物、單體、光聚合起始劑以及其他添加劑。藉由uv照射 而使寡聚物及單體進行自由基聚合而交聯,獲得高硬度之 膜。該硬塗材料具有如下之優點:硬化所需之時間短且生 產性提高’另外亦可使用通常之自由基聚合機構之負型感 光性材料,從而使製造成本變廉價。 然而’存在如下之問題:由於有機成分多,因此與其 他硬塗材料相比而言硬度、耐擦傷性低,且產生由於uv 硬化之體積收縮所造成之龜裂。 近年來受到關注之靜電容式觸控面板為硬塗材料的用 途之一。靜電容式觸控面板具有如下之結構:於坡螭上具 有藉由ITO (Indium Tin Oxide)或金屬(銀、鋇、|呂等) 而製作之圖案。為了保護該ITO及金屬,要求具有高的硬 度、透明性、耐濕熱性之膜。然而,難以兼顧該些性能, 4 201142506 需求用以解決該問題之硬塗材料。 有機系硬塗材料已知有含有如下化合物之uv硬化型 塗佈組成物:含有聚合性基之寡聚物、單體、光聚合起始 劑以及其他添加劑。該組成物具有圖案加工性,可獲得具 硬度與透明性之硬化膜。⑽,於耐濕熱性方面^ 百同題。 整合之手法已知有於魏燒中添加金屬 / ( >照專利文獻1 )。認為其機理 錯螯合劑促進魏燒之交聯,使耐濕熱性提高。、Ί 石夕氧=聚下之例子:藉由將金屬螯合劑用作 (例如參照i利文獻^聚合㈣能基而辭負型感光性 料(ΐ:文:?)告了含有有機金屬化合物之負型感光性材 [先前技術文獻] [專利文獻] 曰本專利特開平㈣1173號公報 專利^ 本專利特開2008·203605號公報 [非專獻1日本專利特開2007-308688號公報 硬塗·大原昇等人著、「以塑膠基材為中心之 會、200s年塗佈ί術與硬度之提高」、技術情報協 於第3〇1頁 利文獻1之技術巾存在如下之問題:由於有機 201142506 成刀夕,因此與其他硬塗材料相比而言硬度、耐擦傷性低, 且產生由於uv硬化之體積收縮所造成之裂痕。 於專利文獻1之技術中,樹脂之主鏈及側鏈僅限於疏 水性之矽氧烷,對於例如在侧鏈具有羧基之矽氧烷以及ς 此以外之含有羧基之樹脂等親水性樹脂之效果並不明確。 於專利文獻2之技術中,為了抑制預供烤時石夕氧烧之 交聯,矽醇基之含量少,難以藉由鹼性水溶液而顯影。 於專利文獻3之技術中,為了形成金屬膜而進行煅 燒,並未殘存有機成分。因此,有機金屬化合物對樹脂成 分帶來何種效果並不明確。 如上所述,雖然需求具有高硬度、高透明及高耐濕熱 性且可藉由鹼性顯影液而進行圖案加工之負型感光性材 料,但迄今為止並未確定該技術。 【發明内容】 本發明之課題在於提供一種圖案加工性優異,可藉由 uv硬化及熱硬化而獲得高硬度、高透明且耐濕熱性優異 之硬化膜’可鹼顯影之負型感光性樹脂組成物。 即,本發明之目的可藉由負型感光性樹脂組成物而達 成,所述負型感光性樹脂組成物含有(Α)羧酸當量為200 g/m〇l以上MOOg/mol以下之鹼可溶性樹脂、(Β)光聚合 起始劑、(c)多官能單體、(D)锆化合物。 而且,本發明之目的可藉由觸控面板保護膜而達成, 所述觸控面板保護膜是使上述之負型感光性樹脂組成物硬 化而成。 6 201142506 之目的可藉由金屬配線保護膜而達成,所述金 f己線保相是使上述之負型感光性樹脂組成物硬化而 成0 _而且,本發明之目的可藉由觸控面板構件而達成,所 述觸,面板構件具備上述之貞㈣光性樹脂組成物之硬化 膜,藉由該硬化膜而保護含鉬金屬配線。 本發明之負型感光性樹脂組成物較佳的是硬化膜形成 用組成物。 本發明之負型感光性樹脂組成物較佳的是保護膜形成 用組成物。 本發明之負型感光性樹脂組成物中,較佳的是(A) 叛酸當3:為200 g/mol以上1,400 g/mol以下之驗可溶性樹 脂是具有乙烯性不飽和鍵之丙烯酸樹脂。 本發明之負型感光性樹脂組成物中,較佳的是(A) 缓酸當量為200 g/mol以上1,400 g/mol以下之驗可溶性樹 脂是具有乙烯性不飽和鍵之聚矽氧烷。 本發明之負型感光性樹脂組成物中,較佳的是(D) 結化合物是平均粒徑為100 nm以下之氧化锆粒子。 本發明之負型感光性樹脂組成物中,較佳的是(D) 锆化合物是通式(1)所表示之化合物之任意1種以上。 [化1] 7 201142506[Technical Field] The present invention relates to a negative photosensitive resin composition, a protective film using the same, and a touch panel member. [Prior Art] At present, the use of hard coating materials involves many aspects, such as surface hardness of containers, sheets, films, optical disks, thin displays, and the like which can be used for automobile parts, cosmetics, and the like. The properties required for the hard coat material include, in addition to hardness and scratch resistance, heat resistance, weather resistance, adhesion, and the like. Representative examples of the hard coat material include a radical polymerization type uv hardening type hard coat (for example, refer to the non-patent literature), which is composed of a polymerizable group-containing oligomer, a monomer, a photopolymerization initiator, and other additives. The oligomer and the monomer are subjected to radical polymerization by uv irradiation to crosslink to obtain a film having high hardness. The hard coat material has the advantages that the time required for hardening is short and the productivity is improved. The negative photosensitive material of the radical polymerization mechanism makes the manufacturing cost cheaper. However, there is a problem that the hardness and the scratch resistance are low compared with other hard coating materials due to the large number of organic components. The crack caused by the volume shrinkage of uv hardening. The capacitive touch panel that has received attention in recent years is one of the applications of hard coating materials. The capacitive touch panel has the following structure: A pattern made of ITO (Indium Tin Oxide) or a metal (silver, bismuth, or ruthenium). In order to protect the ITO and the metal, a film having high hardness, transparency, and moist heat resistance is required. It is difficult to balance these properties. 4 201142506 A hard coating material is required to solve this problem. Organic hard coating materials are known to have a uv hardening coating composition containing a polymerizable group-containing oligomer, single The body, photopolymerization initiator and other additives. The composition has pattern processing properties, and can obtain a cured film having hardness and transparency. (10) In terms of heat and humidity resistance, the same problem is known. Metal is added during the burning (> according to Patent Document 1). It is considered that the mechanism of the chelating agent promotes the cross-linking of Wei-burn and improves the heat-and-moisture resistance. Example of Ί石夕氧=聚下: By metal chelating agent It is used as a negative photosensitive material containing an organometallic compound, for example, with reference to the i-literal (polymerization) (i) energy source (ΐ:文:?) [Prior Art Document] [Patent Literature] Patent Unexamined Patent No. 1173, Patent No. 2008-203605 [Non-specialized Japanese Patent Laid-Open No. 2007-308688, hard coating, Daharasheng, etc., "The meeting centered on plastic substrates, 200s year coating and hardness The technical towel of the Technical Information Association on page 3, page 1 has the following problem: due to the organic 201142506, the hardness and scratch resistance are low compared with other hard coating materials, and The crack caused by the volume shrinkage of the uv hardening. In the technique of Patent Document 1, the main chain and the side chain of the resin are limited to the hydrophobic siloxane, and for example, a oxane having a carboxyl group in the side chain and ς The effect of the hydrophilic resin such as a resin containing a carboxyl group is not clear. In the technique of Patent Document 2, in order to suppress cross-linking of the cerium oxide in the pre-bake roasting, the content of the sterol group is small, and it is difficult to use an alkaline aqueous solution. In the technique of Patent Document 3, in order to form a metal film, calcination is performed, and no organic component remains. Therefore, the effect of the organometallic compound on the resin component is not clear. As described above, although a negative photosensitive material which has high hardness, high transparency, and high moisture and heat resistance and can be patterned by an alkaline developing solution is required, this technique has not been determined so far. SUMMARY OF THE INVENTION An object of the present invention is to provide a cured film of an alkali-developable negative photosensitive resin which is excellent in pattern processability and can be obtained by high-hardness, high transparency, and moist heat resistance by uv hardening and heat curing. Things. That is, the object of the present invention can be attained by a negative photosensitive resin composition containing an alkali solubility of (Α) carboxylic acid equivalent of 200 g/m〇l or more and MOOg/mol or less. Resin, (Β) photopolymerization initiator, (c) polyfunctional monomer, (D) zirconium compound. Further, the object of the present invention can be attained by a touch panel protective film which is obtained by hardening the above-mentioned negative photosensitive resin composition. 6 The purpose of 201142506 can be achieved by a metal wiring protective film which cures the negative photosensitive resin composition described above to 0. Moreover, the object of the present invention can be achieved by a touch panel. In the case of the member, the panel member includes the cured film of the above-described bismuth (four) photoresin composition, and the molybdenum-containing metal wiring is protected by the cured film. The negative photosensitive resin composition of the present invention is preferably a composition for forming a cured film. The negative photosensitive resin composition of the present invention is preferably a composition for forming a protective film. In the negative photosensitive resin composition of the present invention, it is preferred that (A) the repulsive acid 3: 200 g/mol or more and 1,400 g/mol or less of the soluble resin is an acrylic acid having an ethylenically unsaturated bond. Resin. In the negative photosensitive resin composition of the present invention, it is preferred that (A) a slow acid equivalent weight of 200 g/mol or more and 1,400 g/mol or less of the soluble resin is a polyoxyl group having an ethylenically unsaturated bond. alkyl. In the negative photosensitive resin composition of the present invention, it is preferred that the (D) junction compound is zirconia particles having an average particle diameter of 100 nm or less. In the negative photosensitive resin composition of the present invention, it is preferred that the (D) zirconium compound is any one or more of the compounds represented by the formula (1). [Chemical 1] 7 201142506

3 U1表示氫、錄、芳基、縣及其取代物,r2攻 ^表=氫、錄、芳基、烯基、絲基及其取代物。多你 R、R及R3可相同亦可不同。n表示〇〜4之整數。) [發明的效果] +本發明之負型感光性樹脂組成物之圖案加工性優異, 可藉由UV硬化及熱硬化喊得冑硬度、冑透明且耐濕執 性優異之硬化膜。 、·、、、 為讓本發明之上述和其他目的、特徵和優點能更明續 易懂’下域舉較佳實_,並配合所關式,作詳 明如下。 &lt; 【實施方式】 本發明之負型感光性樹脂組成物含有:(A)敌酸當量 為200 g/m〇l以上moo g/m〇i以下之鹼可溶性樹脂、(B) 光聚合起始劑、(C)多官能單體、(D)锆化合物。 本毛明之負型感光性樹脂組成物較佳的是硬化膜形成 用組成物。所謂硬化膜是指未經過藉由锻燒或者剝離液處 理等而將樹脂成分全部除去之步驟,藉由光及/或熱進行硬 化而所得之膜。該硬化膜之使用方法並無特別之限制,例 如可列舉:觸控面板用保護膜、硬塗材、TFr用平坦化膜、 彩色濾光片用保護層、鈍化膜、抗反射薄膜、金屬配線保 8 201142506 護膜等各種保護臈,以及觸控面板用絕緣膜、TFT用絕緣 膜、層間絕緣膜等各種絕緣膜,以及光學濾光片、彩色濾 光片用感光性間隔件、微透鏡等。該些使用方法中,自^ 有高的硬度、透明性、耐濕熱性之方面考慮,較佳的是作 為保護膜而使用。所謂保護膜是表示以保護各種底層基材 之目的而使用的硬化膜。該保護膜之使用方法並無特別之 限制,可列舉上述者作為具體例。 本發明之負型感光性樹脂組成物含有(A)緩酸當量 為200 g/mol以上i,4〇〇 g/m〇i以下之驗可溶性樹脂。所謂 綾酸當量是表示為了獲得1 m〇l量之羧基而必須之樹脂之 重量,單位為g/mol。於鹼可溶性樹脂之羧酸當量超過ι,4〇〇 g/mol之情形時’產生如下之問題:負型感光性樹脂組成 物之驗溶解性(顯影性)差,無法形成良好之圖案,而且 即使可顯影亦無法抑制顯影後之殘留,或者顯影液種類必 須較大之限制等。另一方面,於鹼可溶性樹脂之緩酸當量 不足200 g/m〇i之情形時’無法抑制曝光部之膜減少,而 且除了耐濕熱性差以外,解像度亦差。藉由使羧酸當量為 該範圍’可於各種顯影條件下形成良好之圖案。 而且,本發明之負型感光性樹脂組成物中所使用之 (A)羧酸當量為200 g/mol以上1,400 g/m〇l以下之鹼可 溶性樹脂具有乙烯性不飽和雙鍵基,藉此可使交聯密度提 高’且可使硬化膜之硬度提高。羧酸當量之較佳之範圍為 300 g/mol以上1200 g/mol以下,更佳的是4〇〇 g/mol以上 800 g/mol 以下。 201142506 (A)叛酸當量為200 g/mol以上1,400 g/mol以下之 驗可溶性細旨可列舉聚魏燒、丙雜職、㈣亞胺、 聚醢胺酸、聚醯胺等。對於提高硬化膜之硬度而言,較佳 的是於(A)羧酸當量為2〇〇 g/m〇1以上14〇〇 g/m〇1以下 之臉可;谷性樹脂中’於至少一部分中導入乙烯性不飽和雙 鍵基。自乙烯性不飽和雙鍵基之導入之容易性考慮,該些 聚合物中更佳的是㈣氧燒、丙烯酸樹脂 。而且,亦可含 有2種以上該些聚合物。 作為(A)羧酸當量為200 g/mol以上1,400 g/mol以 下之驗可溶性樹脂,可列舉較佳例如下,但並不限定於此。 聚石夕氧统例如較佳的是使具有羧基及/或二羧酸酐基 之有機石夕炫化合物水解,使該水解物縮合而所得之化合 物。而且,為了調整羧酸當量,較佳的是同時使用其他有 機矽烷化合物。其中,自使所得之硬化膜之硬度變高之方 面考慮,較佳的是使用具有乙烯性不飽和鍵之有機矽烷化 合物。 水解反應之條件可適宜設定,例如較佳的是以丨分鐘 〜180为|里於溶劑中、有機矽烧化合物中添加酸觸媒及水 之後,於室溫以上11〇〇c以下反應丨分鐘〜18〇分鐘。藉由 於此種條件下進行水解反應,可抑麵烈之反應。反應溫 度更佳的是30¾以上i〇5°c以下。 ,解反應較佳的是於酸觸媒之存在下進行。酸觸媒較 佳的是含有曱酸、乙酸或者磷酸之酸性水溶液。該些酸觸 媒之較佳含量相對於水解反應時所使用之所有有機矽烷化 201142506 合物100重罝份而言,較佳的是〇 1重量份以上5重量份 以下。藉由使酸觸媒之量為上述範圍,可容易地控制水解 反應使其必要且充分地進行。 縮合反應之條件例如較佳的是如上述那樣藉由有機矽 烷化合物之水解反應而獲得矽醇基化合物之後,將反應液 直接於50°C以上、溶劑之沸點以下加熱丨小時〜1〇〇小時 而使其反應。而且,為了提高聚矽氧烷之聚合度,亦可再 加熱或者添加鹼觸媒。而且,亦可視需要而水解後,於加 熱及/或減壓下蒸餾、除去適量之生成醇等,其後添加適宜 之溶劑。 魏酸當望:為200 g/mol以上1,4〇〇 g/m〇l以下且具有乙 烯性不飽和鍵之聚矽氧烷例如較佳的是使具有羧基及/或 二羧酸酐基之有機矽烷化合物與具有乙烯性不飽和鍵之有 機矽烷化合物進行水解,使該水解物縮合而所得之化合物。 具有羧基之有機矽烷化合物例如可列舉:3_三曱氧基 矽烷基丙酸、3-三乙氧基矽烷基丙酸、3_二甲基甲氧基矽 烷基丙酸、3-二曱基乙氧基矽烷基丙酸、4三甲氧基矽烷 基丁酸、4·三乙氧基魏基丁酸、4二甲基甲氧基石夕烧基 丁酸、—4·二甲基乙氧基魏基丁酸、5_三?氧基梦烧基戍 酸、5-二乙氧基矽烷基戊酸、5_二甲基甲氧基矽烷基戊酸、 5-—甲基乙氧基石夕燒基戊酸等。 具有二幾酸酐基之有機矽烷化合物例如可列舉· 3_三 甲氧基矽烷基丙基琥珀酸酐、3·卜y工卜丰シシシy 口匕1^、續無水物、3_二甲基甲氧基魏基丙基玻拍 201142506 酉文酐、3-一曱基乙氧基石夕烧基丙基琥j白酸軒、3_三曱氧基 矽烷基丙基環己二曱酸酐、3_三乙氧基矽烷基丙基環己二 甲酸針、3-一曱基曱氧基石夕烧基丙基環己二曱酸肝、3_二 曱基乙氧基矽烷基丙基環己二曱酸酐、3_三曱氧基矽烷基 丙基鄰苯二甲酸酐、3_三乙氧基矽烷基丙基鄰苯二曱酸奸&quot;、 3-二曱基曱氧基矽烷基丙基鄰苯二曱酸酐、3_二甲基乙氧 基石夕烧基丙基鄰苯二甲酸酐等。 其他有機矽烷化合物例如可列舉:甲基三甲氧基矽 烷、曱基三乙氧基矽烷、乙基三曱氧基矽烷、乙基三乙氧 基矽烷、己基三甲氧基矽烷、十八烷基三甲氧基矽烷、十 八烧基二乙氧基石夕烧、3-胺基丙基三乙氧基發烧、胺 基乙基)-3-胺基丙基三甲氧基矽烷、3-氯丙基三甲氧基矽 烧、3-(N,N-一縮水甘油基)胺基丙基三曱氧基石夕院、3_縮水 甘油氧基丙基三曱氧基矽烷、γ-胺基丙基三甲氧基矽烷、γ_ 胺基丙基三乙氧基矽烷、Ν·β-(胺基乙基)-γ-胺基丙基三曱 氧基矽烷、β-氰乙基三乙氧基矽烷、縮水甘油氧基甲基三 曱氧基矽烷、縮水甘油氧基曱基三乙氧基矽烷、α_縮水甘 油氧基乙基三甲氧基名夕烧、α-縮水甘油氧基乙基三乙氧基 石夕烧、^縮水甘油氧基乙基三曱氧基矽烷、β_縮水甘油氧 基乙基三乙氧基石夕烧、α-縮水甘油氧基丙基三甲氧基石夕 烧、α-縮水甘油氧基丙基三乙氧基石夕烧、β_縮水甘油氧基 丙基三曱氧基矽烷、β-縮水甘油氧基丙基三乙氧基矽烧、γ_ 縮水甘油氧基丙基三曱氧基石夕烧、γ_縮水甘油氧基丙基三 乙氧基矽烷、α-縮水甘油氧基丁基三曱氧基矽烷、α_縮水 12 201142506 甘油氧基丁基三乙氧基矽烷、β_縮水甘油氧基丁基三曱氧 基矽烷、β-縮水甘油氧基丁基三乙氧基矽烷、7_縮水甘油 氧基丁基二曱氧基石夕烧、γ·縮水甘油氧基丁基三乙氧基石夕 烧、δ-縮水甘油氧基丁基三甲氧基石夕烧、g_縮水甘油氧基 丁基三乙氧基矽烷、(3,4-環氧環己基)甲基三曱氧基矽烷、 (3,4-環氧環己基)曱基三乙氧基矽烷、2_(3,4_環氧環己基) 乙基二丙氧基石夕烧、2-(3,4-環氧環己基)乙基三丁氧基石夕 烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、2_(3,4_環氧環 己基)乙基三乙氧基矽烷、2·(3,4-環氧環己基)乙基三笨氧基 矽烷、3-(3,4-環氧環己基)丙基三甲氧基矽烷、3 (3,4環氧 環己基)丙基三乙氧基矽烷、4-(3,4-環氧環己基)丁基三甲氧 基矽烷、4-(3,4-環氧環己基)丁基三乙氧基矽烷、二甲基二 甲氧基魏、二甲基二乙氧基魏、γ•縮水甘油氧基丙基 甲基二甲氧基矽烷、γ-胺基丙基曱基二甲氧基矽烷' 丫_胺 基丙基甲基二乙氧基發烧、Ν_(2_胺基乙基)_3_胺基丙基甲 基二甲氧基矽烷、縮水甘油氧基甲基二甲氧基矽烷、縮水 甘油氧基曱基曱基二乙氧基;^、α•縮水甘油氧基乙基甲 基二甲氧基石夕烧、α·縮水甘油氧基乙基甲基二乙氧^石夕 燒、β-縮水甘油氧基乙基甲基二甲氧基魏、ρ•縮水甘油 氧基乙基曱基三乙氧基魏、α•縮水甘油氧基丙基甲基二 甲氧基魏、a·縮水甘油氧基丙基甲基二乙氧基魏 縮水甘油氧基丙基?基二甲氧基魏、β縮水甘油氧基丙 基甲基二乙氧基魏、γ_縮水甘油氧基丙基甲基二甲氧義 石夕烧、γ·縮水甘油氧絲基甲基二乙祕魏、γ縮水ς 13 201142506 油氧基丙基乙基二曱氧基矽烷、γ·縮水甘油氧基丙基乙基 二乙氧基石夕烧、3-氣丙基甲基二甲氧基石夕院、3_氣丙基甲 基二乙氧基矽烷、環己基曱基二甲氧基矽烷、十八烷基曱 基二甲氧基矽烷、四曱氧基矽烷、四乙氧基矽烷、三氟曱 基三曱氧基石夕烧、三氟甲基三乙氧基石夕烧、三氟丙基三甲 氧基矽烷、三氟丙基三乙氧基矽烷等。另外,可藉由使用 乙稀基二曱氧基碎烧、乙稀基三乙氧基梦烧、匕、二〆千儿 夕/卜半シシ今シ、乙烯基甲基二乙氧基矽烷、烯丙基三 甲氧基矽烷、烯丙基三乙氧基矽烷、烯丙基甲基二甲氧基 矽烷、烯丙基甲基二乙氧基矽烷、苯乙烯基三甲氧基矽烷、 苯乙烯基三乙氧基矽烷、苯乙烯基甲基二甲氧基矽烷、苯 乙烯基甲基二乙氧基矽烷、γ·丙烯醯基丙基三甲氧基矽烷、 γ·丙烯醯基丙基三乙氧基矽烷、γ甲基丙烯醯基丙基三甲 氧基矽烷、γ-曱基丙烯醯基丙基三乙氧基矽烷、γ_甲基丙 烯醯基丙基甲基二甲氧基魏、γ•甲基丙烯醯基丙基曱基 二乙氧基矽烷、γ-丙烯醯基丙基甲基二甲氧基矽烷、1丙 烯I基丙基曱基二乙氧基#燒等’而容易地導人乙烯性不 飽和雙鍵基。 來=氧烷之羧酸當量可藉由1H-NMR而算出聚矽氧烷 之石夕醇基/舰比率之後,測定酸值而算出。 ^聚魏姑有乙触不飽和雙鍵基之情形時,其含 = 0^、特別之限制’較佳的是雙鍵當量為15G g/mo1以上 町。藉由使雙鍵當量為上述顧,可以高 顧硬度與抗龜裂性。雙鍵當量可藉由測定埃值而 201142506 零 * — ,—p—鲁 算出。 聚矽氧烷之重量平均分子量(Mw)並無特別之限制, 車义佳的疋以藉由凝膠渗透層析法(GPC)而測定之聚苯乙 烯換算計而言為1,000以上100,000以下。藉由使Mw為 上述範圍,可獲得良好之塗佈特性,且形成圖案時之於顯 影液中之溶解性亦變良好。 、&quot; 丙烯酸樹脂較佳的是使(甲基)丙烯酸、(甲基)丙稀酸醋 進行自由基聚合而成之丙烯酸樹脂。自由基聚合之觸媒並 無特別之限制,通常使用偶氮雙異丁腈等偶氮化合物或過 氧化苯曱醯等有機過氧化物等。 自由基聚合之條件可適宜設定,例如較佳的是於溶劑 中添加(曱基)丙烯酸、(曱基)丙烯酸酯以及自由基聚合觸 媒’藉由起泡或減壓脫氣等而對反應容器内充分地進行氣 氣置換後’於6〇t以上1UTC以下反應30分鐘〜300分 鐘。而且,亦可視需要使用硫醇化合物等鏈轉移劑。 (甲基)丙烯酸酯可使用:(曱基)丙烯酸曱酯、(曱基)丙 烯酸乙酯、(甲基)丙烯酸丙酯、(曱基)丙烯酸環丙酯、(甲 基)丙烯酸環戊酯、(曱基)丙烯酸環己酯、(曱基)丙烯酸環 己烯基酯、(曱基)丙烯酸_4·曱氧基環己酯、(甲基)丙烯酸_2_ 環丙基氧基羰基乙酯、(曱基)丙烯酸_2_環戊基氧基羰基乙 醋、(曱基)丙烯酸_2_環己基氧基羰基乙酯'(甲基)丙婦酸_2_ ,己烯基氧基羰基乙酯、(曱基)丙烯酸-2-(4-甲氧基環己基) 氡基羰基乙酯、(曱基)丙烯酸降冰片酯、(甲基)丙烯酸異冰 片酉曰(甲基)丙稀酸四環癸基醋、(曱基)丙烯酸二環戊稀基 15 201142506 酯、(曱基)丙烯酸金剛垸醋、(曱基)丙稀酸士甲基金剛院 酯、(甲基)丙烯酸-1-甲基金剛烧酿等。亦可與苯乙烯、對 甲基苯乙烯、鄰曱基苯乙稀、間甲基苯乙稀、_基苯乙 烯等芳香族乙稀系化合物共聚。 羧酸當量為200 g/m〇l以上丨,4〇〇 g/m〇1以下且且有乙 稀性不飽和鍵之_酸樹月旨例如較佳的是使(甲基)㈣酸 以及(曱基)丙烯酸醋進行自由基聚合後,與具有乙稀性不 飽和雙鍵基之環氧化合物進行加成反應而所得者。且有乙 稀性不飽和雙鍵基之環氧化合物的加成反應中所使用之觸 媒=無特別之限制’可使用公知之觸媒,例如可使用二甲 基苯胺、2,4,6-二(二甲胺甲基)苯紛、三甲基节基胺等胺基 系觸媒,2-乙基己酸錫⑻、十二烧酸二丁基錫等錫系觸 媒’ 2-乙基己酸鈦(IV)等鈦系觸媒,三苯基麟等鱗系觸 媒以及乙醯丙g同鉻、氯化鉻等鉻系觸媒等。具有乙婦性不 飽和雙鍵基之環氧化合物例如可錢··(㈤㈣酸縮水 甘油醋、(曱基)丙稀酸-α_乙基縮水甘油酯、(甲基)丙稀酸_α_ 正丙基縮水甘油g旨、(甲基)丙烯酸_α•正丁基縮水甘油醋、 (甲基)丙婦酸-3,4-環氧丁酯、(曱基)丙烯酸_3,4·環氧庚醋、 (曱基)丙稀酸乙基_6/7_環氧庚酯、婦丙基縮水甘油驗、 ^稀基縮水甘_、鄰乙烯基¥基縮水甘_、間乙烯基 苄基縮水甘油醚、對乙烯基苄基縮水甘油醚、…甲基-鄰乙 烯基节基縮水甘油驗、aH間乙烯鮮絲水甘油鍵、 2基-對乙烯鮮基縮水甘㈣、2,3_二縮水甘油氧基^ 基本乙稀、2,4_二縮水甘油氧基甲基苯乙稀、2,5二縮水甘 201142506 ~ -~Γ— 35^3'2’6_二縮水甘油氧基甲基苯乙婦、2,3,4-3 U1 represents hydrogen, aryl, aryl, county and its substituents, and r2 is a hydrogen, a aryl group, an alkenyl group, a silk group and a substituent thereof. More than you R, R and R3 can be the same or different. n represents an integer of 〇~4. [Effects of the Invention] The negative photosensitive resin composition of the present invention is excellent in pattern processability, and can be cured by UV curing and heat hardening, and is excellent in transparency, transparency, and moisture resistance. The above and other objects, features and advantages of the present invention will become more apparent and understood. <Embodiment> The negative photosensitive resin composition of the present invention contains (A) an alkali-soluble resin having a dicarboxylic acid equivalent of 200 g/m〇l or more and a moo g/m〇i or less, and (B) photopolymerization. Starting agent, (C) polyfunctional monomer, (D) zirconium compound. The negative photosensitive resin composition of the present invention is preferably a composition for forming a cured film. The cured film refers to a film obtained by removing all of the resin components by calcination or stripping treatment, and hardening by light and/or heat. The method of using the cured film is not particularly limited, and examples thereof include a protective film for a touch panel, a hard coat material, a flattening film for TFr, a protective layer for a color filter, a passivation film, an antireflection film, and a metal wiring. Bao 8 201142506 Various protective films such as protective film, various insulating films such as insulating films for touch panels, insulating films for TFTs, and interlayer insulating films, and optical filters, photosensitive spacers for color filters, microlenses, etc. . Among these methods of use, it is preferably used as a protective film from the viewpoint of high hardness, transparency, and heat and humidity resistance. The protective film is a cured film which is used for the purpose of protecting various underlying substrates. The method of using the protective film is not particularly limited, and the above may be mentioned as a specific example. The negative photosensitive resin composition of the present invention contains (A) a soluble resin having a retarding acid equivalent of 200 g/mol or more and 4 g/m〇i or less. The citric acid equivalent is a weight of a resin which is required to obtain a carboxyl group in an amount of 1 m〇, and the unit is g/mol. When the carboxylic acid equivalent of the alkali-soluble resin exceeds ι, 4 〇〇g/mol, the following problems occur: the solubility of the negative photosensitive resin composition is poor (developability), and a good pattern cannot be formed, and Even if it is developable, it is impossible to suppress the residue after development, or the type of the developer must be large, and the like. On the other hand, when the slow acid equivalent of the alkali-soluble resin is less than 200 g/m〇i, the film of the exposed portion cannot be suppressed from being reduced, and the resolution is inferior in addition to poor heat and humidity resistance. By setting the carboxylic acid equivalent to this range, a good pattern can be formed under various development conditions. Further, the alkali-soluble resin having a (A) carboxylic acid equivalent of 200 g/mol or more and 1,400 g/m〇1 or less used in the negative photosensitive resin composition of the present invention has an ethylenically unsaturated double bond group. Thereby, the crosslinking density can be increased 'and the hardness of the cured film can be improved. The preferred range of the carboxylic acid equivalent is 300 g/mol or more and 1200 g/mol or less, more preferably 4 〇〇 g/mol or more and 800 g/mol or less. 201142506 (A) The reductive acid equivalent is 200 g/mol or more and 1,400 g/mol or less. The solubility requirements are as follows: polyweishen, propyl miscellaneous, (iv) imine, polylysine, and polyamidamine. In order to increase the hardness of the cured film, it is preferred that the (A) carboxylic acid equivalent is 2 〇〇g/m 〇 1 or more and 14 〇〇 g/m 〇 1 or less; in the gluten resin, at least An ethylenically unsaturated double bond group is introduced into a part. From the viewpoint of easiness of introduction of the ethylenically unsaturated double bond group, (4) oxygen-fired, acrylic resin is more preferable among the polymers. Further, two or more kinds of these polymers may be contained. The soluble resin (A) having a carboxylic acid equivalent of 200 g/mol or more and 1,400 g/mol or less is preferably exemplified below, but is not limited thereto. For example, a compound obtained by hydrolyzing an organic sulfonium compound having a carboxyl group and/or a dicarboxylic anhydride group and condensing the hydrolyzate is preferably used. Further, in order to adjust the carboxylic acid equivalent, it is preferred to use other organic decane compounds at the same time. Among them, from the viewpoint of increasing the hardness of the obtained cured film, it is preferred to use an organic decane compound having an ethylenically unsaturated bond. The conditions of the hydrolysis reaction can be appropriately set. For example, it is preferably enthalpy to 180 liters in the solvent, and the acid catalyst and water are added to the organic sinter compound, and then reacted at room temperature or more and 11 〇〇c or less. ~18〇 minutes. By carrying out the hydrolysis reaction under such conditions, the reaction can be suppressed. The reaction temperature is more preferably 303⁄4 or more and i 〇 5 ° C or less. Preferably, the reaction is carried out in the presence of an acid catalyst. The acid catalyst is preferably an acidic aqueous solution containing citric acid, acetic acid or phosphoric acid. The preferred content of the acid catalyst is preferably from 1 part by weight to 5 parts by weight based on 100 parts by weight of all the organodecaneated 201142506 compound used in the hydrolysis reaction. By setting the amount of the acid catalyst to the above range, the hydrolysis reaction can be easily controlled to be carried out sufficiently and sufficiently. The conditions of the condensation reaction are preferably, for example, obtained by the hydrolysis reaction of the organodecane compound as described above, and then the reaction liquid is directly heated at 50 ° C or higher and below the boiling point of the solvent for 丨 1 to 1 hour. And make it react. Further, in order to increase the degree of polymerization of the polyoxyalkylene, it is also possible to reheat or add a base catalyst. Further, if it is hydrolyzed as necessary, it may be distilled under heating and/or reduced pressure to remove an appropriate amount of alcohol or the like, and then a suitable solvent may be added. It is desirable that the polyoxyalkylene having an ethylenically unsaturated bond of 200 g/mol or more and 1,4 〇〇g/m〇l or less has a carboxyl group and/or a dicarboxylic acid anhydride group. A compound obtained by hydrolyzing an organic decane compound and an organic decane compound having an ethylenically unsaturated bond to condense the hydrolyzate. Examples of the organodecane compound having a carboxyl group include 3-trisethoxydecylpropionic acid, 3-triethoxydecylpropionic acid, 3-dimethylmethoxydecylpropionic acid, and 3-didecyl. Ethoxy decyl propionic acid, 4 trimethoxy decyl butyl acid, 4 · triethoxy methoxy butyric acid, 4 dimethyl methoxy sulphuric acid, 4 - dimethyl ethoxy wei butyl acid , 5_ three? Oxyphylline ruthenium acid, 5-diethoxydecyl valeric acid, 5-dimethylmethoxyindolyl valeric acid, 5-methylethoxy sulphuric acid, and the like. Examples of the organodecane compound having a dihydric acid anhydride group include, for example, 3-trimethoxydecylpropyl succinic anhydride, 3·Bu シシシ シシシ シシシ シシシ 匕1^, continuation of anhydrous, 3 dimethyl methoxy Keweipropyl propyl glass shot 201142506 Anthraquinone anhydride, 3- mercaptoethoxy oxalate propyl sulphate j white acid Xuan, 3 _ tridecyloxy decyl propyl cyclohexane phthalic anhydride, 3 _ three Ethoxy decyl propylcyclohexanedicarboxylic acid needle, 3- mercapto methoxy oxalate propyl cyclohexane hexanoic acid liver, 3 - dimercapto ethoxy decyl propyl cyclohexane hexanoic anhydride , 3_tridecyloxydecyl propyl phthalic anhydride, 3_triethoxydecyl propyl phthalate, &quot; 3-dimercaptooxydecyl propyl phthalate Dicaptanic anhydride, 3-dimethylethoxy oxalate phthalic anhydride, and the like. Examples of the other organic decane compound include methyltrimethoxydecane, decyltriethoxydecane, ethyltrimethoxydecane, ethyltriethoxydecane, hexyltrimethoxydecane, and octadecyltrimethyl. Oxydecane, octadecyldiethoxy zeoxime, 3-aminopropyltriethoxylate, aminoethyl)-3-aminopropyltrimethoxydecane, 3-chloropropyl Trimethoxy oxime, 3-(N,N-glycidyl)aminopropyltrimethoxy oxime, 3-glycidoxypropyltrimethoxy decane, γ-aminopropyltrimethyl Oxydecane, γ-aminopropyltriethoxydecane, Νβ-(aminoethyl)-γ-aminopropyltrimethoxy decane, β-cyanoethyltriethoxy decane, shrinkage Glyceryloxymethyltrimethoxydecane, glycidoxycarbonyltriethoxydecane, α-glycidoxyethyltrimethoxysulfate, α-glycidoxyethyltriethoxylate Xishou, glyceryloxyethyltrimethoxy decane, β-glycidoxyethyl triethoxy sulphur, α-glycidoxypropyltrimethoxy sulphur, α-shrink Glyceroxypropyltriethoxy zeoxime, β-glycidoxypropyltrimethoxy decane, β-glycidoxypropyltriethoxy oxime, γ_glycidoxypropyltriazine Oxylate, γ-glycidoxypropyltriethoxydecane, α-glycidoxybutyltrimethoxy decane, α_shrinkage 12 201142506 Glyceroxybutyltriethoxydecane, β _ Glycidoxybutyl trimethoxy decane, β-glycidoxy butyl triethoxy decane, 7-glycidoxy butyl decyl oxysulphate, γ·glycidoxy butyl Triethoxy zebra, δ-glycidoxy butyl trimethoxy sulphur, g-glycidoxy butyl triethoxy decane, (3,4-epoxycyclohexyl)methyl trioxane Baseline, (3,4-epoxycyclohexyl)decyltriethoxydecane, 2_(3,4-epoxycyclohexyl)ethyldipropoxylate, 2-(3,4-epoxy Cyclohexyl)ethyltributyloxylinane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, 2-(3,4-epoxycyclohexyl)ethyltriethoxydecane, 2·(3,4-epoxycyclohexyl)B Tris-oxydecane, 3-(3,4-epoxycyclohexyl)propyltrimethoxydecane, 3 (3,4 epoxycyclohexyl)propyltriethoxydecane, 4-(3,4- Epoxycyclohexyl)butyltrimethoxydecane, 4-(3,4-epoxycyclohexyl)butyltriethoxydecane, dimethyldimethoxywei, dimethyldiethoxywei, γ•glycidoxypropylmethyldimethoxydecane,γ-aminopropylmercaptodimethoxydecane' 丫-aminopropylmethyldiethoxylate, Ν_(2_amine Base ethyl)_3_aminopropylmethyldimethoxydecane, glycidoxymethyldimethoxydecane, glycidoxycarbonyl fluorenyldiethoxy; ^,α•glycidyloxy Ethyl ethyl dimethoxy zebra, α·glycidoxyethylmethyldiethoxylate, β-glycidoxyethylmethyldimethoxy-wei, ρ•glycidol Oxyethylmercaptotriethoxy Wei, α•glycidoxypropylmethyldimethoxywei, a·glycidoxypropylmethyldiethoxyweiglycidoxypropyl? Dimethoxy Wei, β-glycidoxypropylmethyldiethoxy Wei, γ-glycidoxypropylmethyldimethoxysulfide, γ-glycidyloxymethyldiamide秘秘魏, γ缩缩 13 201142506 Oloxypropyl ethyl dimethoxy decane, γ-glycidoxypropyl ethyl diethoxy zexi, 3-cyclopropyl methyl dimethoxy stone Xiyuan, 3_gas propyl methyl diethoxy decane, cyclohexyl decyl dimethoxy decane, octadecyl decyl dimethoxy decane, tetradecyl decane, tetraethoxy decane, Trifluorodecyltrimethoxysulfanylsulfate, trifluoromethyltriethoxysulfate, trifluoropropyltrimethoxydecane, trifluoropropyltriethoxydecane, and the like. In addition, it can be obtained by using ethylene dimethoxy methoxy calcination, ethylene triethoxy dreaming, hydrazine, diterpenoids, bismuth, vinyl methyl diethoxy decane, Allyl trimethoxy decane, allyl triethoxy decane, allyl methyl dimethoxy decane, allyl methyl diethoxy decane, styryl trimethoxy decane, styryl Triethoxydecane, styrylmethyldimethoxydecane, styrylmethyldiethoxydecane, gamma-propenylpropyltrimethoxydecane, gamma-propenylpropyltriethoxylate Baseline, gamma methacryl propyl propyl trimethoxy decane, γ-mercapto propyl decyl propyl triethoxy decane, γ methacryl hydrazyl propyl methyl dimethoxy wei, γ Methyl propylene decyl propyl decyl diethoxy decane, γ-propylene decyl propyl methyl dimethoxy decane, 1 propylene I propyl propyl dimethyl diethoxy # burning, etc. Human ethylenically unsaturated double bond group. The carboxylic acid equivalent of the oxane can be calculated by 1H-NMR to calculate the acid value of the polyoxyalkylene. ^When Weigu has a case where B is unsaturated with a double bond group, it contains = 0^, and a special limit is preferred. The preferred double bond equivalent is 15 G g/mo1 or more. By setting the double bond equivalent to the above, hardness and crack resistance can be improved. The double bond equivalent can be calculated by measuring the angstrom value 201142506 zero * — , —p—lu. The weight average molecular weight (Mw) of the polyoxyalkylene is not particularly limited, and the ruthenium of Che Yijia is 1,000 or more and 100,000 in terms of a polystyrene conversion meter measured by gel permeation chromatography (GPC). the following. By setting Mw to the above range, good coating characteristics can be obtained, and the solubility in the developing liquid at the time of pattern formation is also improved. The &quot; acrylic resin is preferably an acrylic resin obtained by radically polymerizing (meth)acrylic acid or (meth)acrylic acid vinegar. The catalyst for radical polymerization is not particularly limited, and an azo compound such as azobisisobutyronitrile or an organic peroxide such as benzoquinone peroxide is usually used. The conditions of the radical polymerization can be appropriately set. For example, it is preferred to add (mercapto)acrylic acid, (mercapto) acrylate, and a radical polymerization catalyst to the solvent by defoaming or degassing under reduced pressure. After the gas is completely replaced in the vessel, the reaction is carried out at 6 Torr or more and 1 UT or less for 30 minutes to 300 minutes. Further, a chain transfer agent such as a thiol compound may be used as needed. (meth) acrylate can be used: (mercapto) decyl acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, cyclopropyl (meth) acrylate, cyclopentyl (meth) acrylate , (fluorenyl) cyclohexyl acrylate, cyclohexenyl (mercapto) acrylate, 曱4·decyloxycyclohexyl (meth) acrylate, 2-(cyclopropyloxycarbonyl) (meth) acrylate Ester, (mercapto)acrylic acid _2_cyclopentyloxycarbonyl ethyl acetonate, (mercapto)acrylic acid _2_cyclohexyloxycarbonylethyl ester '(methyl)propanoic acid _2 _ hexenyloxy Carbonylethyl ester, 2-(4-methoxycyclohexyl)nonylcarbonylethyl (meth)acrylate, norbornyl (meth)acrylate, isobornyl (meth)acrylate Dilute tetracyclodecyl vinegar, (cyclo)acrylic acid dicyclopentanyl 15 201142506 ester, (mercapto) acrylic acid vinegar, (mercapto) acrylic acid methyl methacrylate, (meth) acrylate -1-methyl diamond just brewed. It may also be copolymerized with an aromatic vinyl compound such as styrene, p-methylstyrene, o-mercaptostyrene, m-methylstyrene or styrene-phenylene. The acid group having a carboxylic acid equivalent of 200 g/m〇l or more and 4〇〇g/m〇1 or less and having an ethylenically unsaturated bond is preferably, for example, a (meth)(tetra) acid and After the radical polymerization of (mercapto) acryl vinegar, an addition reaction with an epoxy compound having an ethylenically unsaturated double bond group is carried out. Further, the catalyst used in the addition reaction of the epoxy compound having a ethylenically unsaturated double bond group is not particularly limited. A known catalyst can be used, for example, dimethylaniline, 2, 4, 6 can be used. -Amino-based catalyst such as bis(dimethylaminomethyl)benzene, trimethylbenzylamine, tin-based catalyst such as tin 2-ethylhexanoate (8) or dibutyltin dodecanoate' 2-ethyl A titanium-based catalyst such as titanium (IV) hexanoate, a scaly catalyst such as triphenyl sulfonate, and a chromium-based catalyst such as chromium or chromium chloride. An epoxy compound having a ethylenically unsaturated double bond group, for example, can be (·(5)(tetra) acid glycidol vinegar, (mercapto)acrylic acid-α-ethylglycidyl ester, (meth)acrylic acid _α_ N-propyl glycidol g, (meth)acrylic acid _α• n-butyl glycidol vinegar, (methyl) propionate-3,4-epoxybutyl acrylate, (mercapto)acrylic acid _3,4· Epoxy vinegar, (mercapto) acrylic acid ethyl _6/7_epoxyheptyl ester, propyl propyl glycidol test, ^ dilute glycidyl _, o-vinyl ke sulphate _, vinyl Benzyl glycidyl ether, p-vinylbenzyl glycidyl ether, ... methyl-o-vinyl glycidyl glycidol test, aH between ethylene fresh silk glycerin bond, 2 base-p-ethylene fresh base shrinkage (4), 2, 3_Diglycidyloxy^Basic Ethylene, 2,4_Diglycidoxymethylstyrene, 2,5 Diglycid 201142506 ~ -~Γ—35^3'2'6_ Diglycidyl Oxymethylbenzene, 2,3,4-

Jm 氧基f絲^、3,4,5_三縮料 二丙二_ 2,4,6·二縮水甘油氧基甲基苯乙烯等。 酸樹脂具有乙烯性不餘和雙鍵基 Γ〇=❹制,魏當錄錢是⑼㈣以上Jm oxy-f silk, 3, 4, 5_ tricondensate dipropylene bis 2,4,6 diglycidoxymethyl styrene and the like. Acid resin has ethylenicity and double bond base ❹=❹ system, Wei Dang recorded money is (9) (four) or more

Hi Γ 。藉缝魏#量為上述顧,可以高 算出。兼顧硬度與抗㈣性。雙鍵當量可藉由狀峨值而 丙«樹脂之重量平均分子量(Mw)並無特別之限 t以2錢膠滲透層析法(GPC) _定之聚苯乙稀換 算汁而S,較佳的是2,〇〇〇以上200 000以下。藉由使Mw 為上述範圍,可獲得良好之塗佈特性,且形成圖案時之於 顯影液中之溶解性亦變良好。 於本發明之負型感光性樹脂組成物中,(A)羧酸當量 為200 g/m〇l以上i,4〇〇 g/mol以下之鹼可溶性樹脂之含量 並無特別之限制’可根據所期望之膜厚或用途而任意選 擇’通常情況下於負型感光性樹脂組成物之固形物中為1〇 wt%以上60 wt%以下。 本發明之負型感光性樹脂組成物含有(B)光聚合起 始劑。(B)光聚合起始劑較佳的是可由於光(包含紫外線、 電子束)而分解及/或反應而產生自由基之光聚合起始劑。 具體例可列舉:2-曱基-[4_(曱基硫基)苯基]-2-N-嗎啉 基丙烷-1-酮、2-二曱基胺基-2-(4-曱基苄基)-1-(4-嗎啉-4- 17 201142506 基-苯基)-丁烷-1-酮、2-苄基-2-二曱基胺基-1-(4-Ν-嗎啉基 苯基)-丁酮-1、2,4,6-三甲基苯甲醯基苯基膦氧化物、雙 (2,4,6-三曱基苯曱醯基)-苯基膦氧化物、雙(2,6-二曱氧基苯 甲醯基)-(2,4,4-三甲基戊基)-膦氧化物、1-苯基-1,2-丙二酮 -2-(鄰乙氧基羰基)肟、1,2-辛二酮,1-[4-(苯基硫基)-2-(0-苯 曱醯肟)]、1-苯基-1,2-丁二酿1-2-(鄰曱氧基羰基)將、1,3-二 苯基丙烷三酮-2-(鄰乙氧基羰基)肟、乙酮,l-[9-乙基-6-(2-曱基苯曱醯基)-9Η-σ卡嗤-3-基]-,1-(0-乙醯基月亏)、4,4-雙(二 曱基胺基)二苯甲酮、4,4-雙(二乙基胺基)二苯曱酮、對二 甲基胺基苯甲酸乙酯、對二甲基胺基苯曱酸乙基己酯、 對二乙基胺基苯曱酸乙酯、二乙氧基苯乙g同、2-經基-2-甲 基-1-苯基丙烷·1·酮、节基二曱基縮酮、丨_(4_異丙基苯基)·2_ 羥基-2-甲基丙烷-ΐ_酮、4-(2-羥基乙氧基)苯基_(2·經基_2_ 丙基)酮、1-羥基環己基-苯基酮、安息香、安息香甲醚、 安息香乙醚、安息香異丙醚、安息香異丁醚、二苯曱酮、 鄰本曱酿本曱酸曱酉旨、4-苯基二苯曱嗣、4,4-二氣二苯曱 酮、經基二苯甲酮、4-苯曱醯基_4,_曱基-二苯硫化物、烧 基化二苯甲酮、3,3,,4,4,_四(第三丁基過氧基羰基)二苯曱 酮、4-苯曱醯基-N,N-二曱基-N-[2-(l-側氧基-2-丙烯基氧基) 乙基]笨曱溴化銨、(4-苯曱醯基苄基)三甲基氣化銨、2羥 基j-(4-苯甲醯基苯氧基)_N,N,N_三甲基丙烯氣化銨一 水合物、2-異丙基噻噸酮、2,4_二曱基噻噸酮、2,4二乙基 噻噸_、2,4-二氣噻噸酮、2-羥基_3-(3,4-二甲基-9-側氧基 -9H-嘆嘴_2_基氧基)_N,N,N_三曱基小丙基氣化銨、2,2, ^ 201142506 ---~Γ— (鄰氯笨基)-4,5,4,,5,-四苯基_1,2_聯咪唑、1〇_丁基_2_氣吖啶 酉同、2-乙基惠醌、二苯甲醯、9,1〇_菲醌、樟腦醌、曱基苯 ^乙酸酸S旨、η5·環戊二烤基♦異两苯基鐵〇 + )_六_ 峻S旨(1-)、二苯硫醚衍生物、雙(…'冬環戊二烯基)_雙 (2,6-二氟_3_(出-吡洛-1-基)-苯基)鈦、嘆噸酮、2_曱基噻噸 酉同、2-氣噻噸酮、4-笨甲醯基_4_甲基苯基酮、二节基酮、 ^同、2,3-二乙氧絲乙酮、2,2·二甲氧基_2_苯基_2_苯基 =乙酮、2-輕基-2-甲基苯_、對第三丁基二氣苯乙嗣、 卞基甲氧基乙基祕、蕙12_第三丁基蒽醒、2_胺基蒽 喊、β-氯蒽酿、蒽酮、苯并蒽酮、二苯并環庚酮、亞甲基 蒽_、4-疊氮基苯基苯乙烯基酮、2 6_雙對疊 ; 基)環己院、㈣對叠氮基苯亞甲基)二=亞; 磺醯氯、喹啉磺醯氣、Ν_苯基硫基。丫啶酮、苯并噻唑二硫 化物、三苯基膦、四演化碳、三溴笨基硬、過氧化笨甲酿 曙紅、亞曱基藍等光還原性色素與抗壞血酸、三乙醇 胺等還原劑之組合等。亦可含有2種以上該些化合物。 θ為了進一步提高硬化膜之硬度,該些化合物中較佳的 是α_胺基烷基苯酮化合物、醯基膦氧化物化合物、肟酯化 合物、具有胺基之二苯甲酮化合物或者具有胺基之苯曰 酷化合物。 α-胺基烷基苯酮化合物之具體例可列舉:孓曱基 [4-(曱基硫基)苯基]-2-嗎琳基丙烧_ι_酮、2_二甲基胺基 ·2-(4-曱基节基)小(4-嗎琳_4·基-苯基)_丁烧.u酮、2_节基 •厶二曱基胺基-1_(4_嗎啉基苯基)_丁酮等。醯基膦氧化物 201142506 化合物之具體例可列舉:2,4,6_三甲基苯曱醯基苯基膦氧化 物、雙(2,4,6-三甲基苯甲醯基)_苯基膦氧化物、雙(2,6_二曱 氧基苯曱醯基)-(2,4,4_三曱基戊基)_膦氧化物等。職化合 物之具體例可列舉:i·苯基·1&gt;2•丙二嗣_2_(鄰乙氧基_炭基) 肟、1,2-辛二酮,苯基硫基)-2-(0-苯曱醯肟)]、1-苯基 •1,2-丁二酮_2-(鄰曱氧基羰基)肟、13二苯基丙烷三酮 -2-(鄰乙氧基馥基)肟、乙酮,1[9乙基_6(2曱基苯曱醯 基)-9H-咔唑-3-基]_,1_(〇_乙醯基肟)等。具有胺基之二苯曱 酮化^物之具體例可列舉:4,4_雙(二曱基胺基)二苯曱酮、 4,4·雙(一乙基胺基)二苯曱酮等。具有胺基之苯曱酸醋化合 ,之^體例可列舉:對二曱基胺基苯曱酸乙酯、對二曱基 胺基苯曱酸·2_乙基己@旨、對二乙基胺基苯曱酸乙醋等。 於本發明之負型感光性樹脂組成物中,⑻光聚合起 始,$含量之含量並無制之限制,較佳的是於貞型感光 性樹脂組成物之固形物中為G] wt%以上2G wt%以下。藉 由使(B)光聚合起始劑之含量為上述範圍可使硬化充分 進仃,且可防止殘留之聚合起始劑溶出等而確保耐溶劑性。 本發明之負型感光性樹脂組成物含有(c)多官能單 用光照射而藉由上述⑻光聚合起始劑使⑹多 官能單體進行聚合,可使本發明之負㈣光性樹脂組成物 之曝光部相對於鹼性水溶液而言變得不溶,可形成負型之 圖案。所謂多官能單體是指於分子中具有至少2個以上乙 ,,不飽和雙鍵之化合並非特別地進行限S,較佳的 疋谷易進行自由基聚合之具有(甲基)丙稀基之多官能單 201142506 體。而且,自感光度、硬度之方面考慮,較佳的是(c) 多官能單體之雙鍵當1為80 g/naoi以上400 g/mol以下。 (C)多官能單體例如可列舉二乙二醇二丙烯酸酯、 二乙二醇一丙浠酸S旨、四乙二醇二丙烯酸醋、二乙二醇二 曱基丙烯酸酯、三乙二醇二曱基丙烯酸酯、四乙二醇二曱 基丙烯酸酯、三羥曱基丙烷二丙烯酸酯、三羥曱基丙烷三 丙烯酸酯、三羥曱基丙烷二甲基丙烯酸脂、三羥甲基丙烷 三甲基丙烯酸酯、1,3-丁二醇二丙烯酸酯、13—丁二醇二甲 基丙烯酸脂、新戊二醇二丙烯酸酯、1,4_丁二醇二丙烯酸 酯、1,4-丁二醇二甲基丙烯酸脂、〗,6_己二醇二丙烯酸酯、 1,9-壬二醇二曱基丙烯酸脂、ι,1〇_癸二醇二甲基丙烯酸 月曰、一經甲基-二環癸烧一丙稀酸酯、季戊四醇三丙烯酸 酯、季戊四醇四丙烯酸酯、季戊四醇三曱基丙烯酸酯、季 戊四醇四曱基丙烯酸酯、二季戊四醇五丙烯酸酯、二季戊 四醇六丙烯酸酯、三季戊四醇七丙烯酸酯、三季戊四醇八 丙烯酸酯、四季戊四醇九丙烯酸酯、四季戊四醇十丙烯酸 酯、五季戊四醇十一丙烯酸酯、五季戊四醇十二丙烯酸酯、 二季戊四醇七曱基丙烯酸酯、三季戊四醇八甲基丙烯酸 酯、四季戊四醇九曱基丙烯酸酯、四季戊四醇十甲基丙烯 酸酯、五季戊四醇十一曱基丙烯酸酯、五季戊四醇十二曱 基丙烯酸酯、二羥曱基·三環癸烷二丙稀酸酯、乙氧基化雙 酚A二丙烯酸酯、9,9·雙[4_(2_丙烯醯氧基乙氧基)苯 第、9,9-雙[4_(2_曱基丙烯醯氧基乙氧基)苯基]苐二9,91 [4-(2-甲基丙烯醯氧基乙氧基)_3_甲苯基]第'(2_丙烯醯氧^ 21 201142506 丙氧基)-3-曱苯基]第、9,9_雙μ#·丙烯崎基乙氧基)_3,5· 二甲基苯基]苐、9,9-雙[4-(2·曱基丙烯醯氧基乙氧基)_3,5_ 二甲基苯基]第等。 ^中,自感光度提高之觀點考慮,較佳的是季戊四醇 四丙烤酸醋、二季戊四醇五丙烯酸酯、二季戊四醇六丙烯 酸酯、三季戊四醇七丙烯酸酯、三季戊四醇八丙烯酸酯等。 而且,自疏水性提高之觀點考慮,較佳的是二羥曱基·三環 癸烧二丙歸酸g旨、二經甲基.三環癸烧二甲基丙稀酸脂、乙 氧基化雙酚A二丙烯酸酯、9,9-雙[4_(2_丙烯醯氧基乙氧基) 苯基]苐等。 於本發明之負型感光性樹脂組成物中,(C)多官能為 體^含量並無_之_,可根據所誠之·或用途 任思選擇’通*情況下於負型感光性樹脂組成物之固形伞 中為10wt%以上6〇wt%以下。 # =發明之負型感光性樹脂組成物含有(D)鍅化合物 ,,含有(D)錯化合物,可使所得之硬化膜之耐濕熱相 提而。具有縣之驗可祕樹脂為源自誠之親水性,g = 藉由含有⑼鍅化合物可使硬化膜之 于濕”、、性棱南。迄今為止已知一部分锆化合物對於聚矽孽 烧而言具有耐濕熱性提高效果(參照專利文獻1),但於録 么知例中’聚錢紅賴僅隱疏水性基,結果 有J基等親水性基之情形 為本發财,並不限於科氧燒,作 ’…’ 十月曰之含有羧基之鹼可溶性樹脂可藉由含有(D: 22 201142506 锆化合物而使硬化膜之耐濕熱性提高這一現象是如今初次 發現。關於其詳細之機理尚不明確,但認為:(D)锆化合 物藉由與(A)羧酸當量為2〇〇 g/m〇丨以上woo 以 :之鹼可溶性樹脂的多個羧基反應而形成交聯結構,使膜 密度提高,㈣使源自絲之親水性減低,由此而使所得 之硬化膜之耐濕熱性提高。(D)锆化合物若為含有鍅原子 之化ό物則並無特別之限制,例如較佳的是平均粒徑為 lOOnm以下之氧化鍅粒子或者通式⑴所表示之化合物。 氧化錯粒子之平均粒徑更_是40腕町。#由使氧化 結粒子之平均粒徑為觸nm以下,可防止所得之硬化膜 白濁。 、 [化2]Hi Γ. The amount of Wei ## is the above, and can be calculated. Both hardness and resistance (four). The double bond equivalent can be determined by the enthalpy value and the weight average molecular weight (Mw) of the resin is not particularly limited. It is preferably converted into a polystyrene conversion solution by a 2 gram gel permeation chromatography (GPC). It is 2, more than 200 000. By setting Mw to the above range, good coating characteristics can be obtained, and the solubility in the developer at the time of pattern formation is also improved. In the negative photosensitive resin composition of the present invention, (A) the carboxylic acid equivalent is 200 g/m〇l or more, and the content of the alkali-soluble resin of 4 〇〇g/mol or less is not particularly limited. The film thickness or the intended use is arbitrarily selected. In general, the solid content of the negative photosensitive resin composition is 1% by weight or more and 60% by weight or less. The negative photosensitive resin composition of the present invention contains (B) a photopolymerization initiator. (B) The photopolymerization initiator is preferably a photopolymerization initiator which can decompose and/or react due to light (including ultraviolet rays, electron beams) to generate a radical. Specific examples include 2-mercapto-[4-(indolylthio)phenyl]-2-N-morpholinylpropan-1-one and 2-didecylamino-2-(4-fluorenyl) Benzyl)-1-(4-morpholin-4- 17 201142506 phenyl-phenyl)-butan-1-one, 2-benzyl-2-didecylamino-1-(4-Ν-? Phenylphenyl)-butanone-1, 2,4,6-trimethylbenzimidylphenylphosphine oxide, bis(2,4,6-trimercaptophenyl)phenylphosphine Oxide, bis(2,6-dimethoxybenzylbenzyl)-(2,4,4-trimethylpentyl)-phosphine oxide, 1-phenyl-1,2-propanedione- 2-(o-ethoxycarbonyl)anthracene, 1,2-octanedione, 1-[4-(phenylthio)-2-(0-benzoquinone)], 1-phenyl-1, 2-butadiene 1-(o-nonyloxycarbonyl), 1,3-diphenylpropanetrione-2-(o-ethoxycarbonyl)anthracene, ethyl ketone, 1-[9-ethyl -6-(2-mercaptobenzoyl)-9Η-σ卡嗤-3-yl]-, 1-(0-ethenyl group), 4,4-bis(didecylamino) Benzophenone, 4,4-bis(diethylamino)benzophenone, p-dimethylaminobenzoic acid ethyl ester, p-dimethylaminobenzoic acid ethylhexyl ester, p-diethyl Ethyl benzyl benzoate, diethoxy phenethyl ketone, 2-carbyl-2-methyl-1-phenylpropane·1 ketone, Di-decyl ketal, 丨_(4_isopropylphenyl)·2_hydroxy-2-methylpropane-fluorenone, 4-(2-hydroxyethoxy)phenyl-(2·yl) _2_ propyl) ketone, 1-hydroxycyclohexyl-phenyl ketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, diphenyl fluorenone, orthoquinone , 4-phenyldiphenylhydrazine, 4,4-dibenzophenone, benzophenone, 4-benzofluorenyl-4,-mercapto-diphenyl sulfide, alkylation Benzophenone, 3,3,,4,4,-tetrakis(t-butylperoxycarbonyl)dibenzophenone, 4-benzofluorenyl-N,N-diindenyl-N-[2 -(l-Sideoxy-2-propenyloxy)ethyl] 曱 曱 ammonium bromide, (4-phenylhydrazinobenzyl)trimethylammonium hydride, 2 hydroxyj-(4- phenyl Nonylphenoxy)_N,N,N_trimethyl propylene vaporized ammonium monohydrate, 2-isopropylthioxanthone, 2,4-dithioxyl thioxanthone, 2,4 diethyl thiophene Tons of _, 2,4-dioxathioxanthone, 2-hydroxy-3-(3,4-dimethyl-9-oxo-oxyl-9H-thrown_2_yloxy)_N,N,N _ tridecyl propyl propyl ammonium sulfate, 2, 2, ^ 201142506 ---~ Γ — (o-chlorophenyl)-4,5,4,,5,-tetraphenyl_1 2_Biimidazole, 1〇_butyl_2_gas acridine, 2-ethyl hydrazine, benzophenone, 9,1 〇 phenanthrenequinone, camphor quinone, decyl benzene acetate , η5·cyclopentane bake base ♦ iso-diphenyl iron hydrazine + ) _ six _ Jun S (1-), diphenyl sulfide derivative, double (... 'winter cyclopentadienyl) _ double (2 ,6-difluoro_3_(ex-pyrazol-1-yl)-phenyl)titanium, sulphonone, 2_mercaptothioxanthene, 2-oxothioxanthone, 4-stupylmethylsulfonyl 4-methylphenone, bis- ketone, ^, 2,3-diethoxyketanone, 2,2.dimethoxy-2-phenyl-2-phenyl-2-ketone, 2 - light keto-2-methylbenzene _, p-tert-butyl benzene acetophenone, fluorenyl methoxyethyl sulphate, fluorene 12 _ t-butyl oxime, 2-amino scream, β-chloropurine Brewing, anthrone, benzofluorenone, dibenzocycloheptanone, methylene hydrazine, 4-azidophenylstyryl ketone, 2 6_double-pair; base) ring, (4) pair Azidobenzylidene) bis = subs; sulfonium chloride, quinoline sulfonium, hydrazine phenyl thio. Photoreductive pigments such as acridone, benzothiazole disulfide, triphenylphosphine, tetra-evolved carbon, tribromo-p-phenyl, peroxidized blister, ruthenium blue, and the like, ascorbic acid, triethanolamine, etc. Combination of agents, etc. Two or more of these compounds may also be contained. θ In order to further increase the hardness of the cured film, an α-aminoalkylphenone compound, a mercaptophosphine oxide compound, an oxime ester compound, a benzophenone compound having an amine group, or an amine is preferable among the compounds. Base benzoquinone cool compound. Specific examples of the α-aminoalkylphenone compound include mercapto[4-(fluorenylthio)phenyl]-2-morphinylpropanone-oxime, 2-dimethylamino group. · 2-(4-indenyl) small (4-methylline _4·yl-phenyl) _ butyl ketone, ketone, 2 gram base • fluorenyl hydrazino-1 — (4 morpholine) Phenylphenyl)-butanone and the like. Specific examples of the mercaptophosphine oxide 201142506 compound: 2,4,6-trimethylphenylnonylphenylphosphine oxide, bis(2,4,6-trimethylbenzylidene)-benzene a phosphine oxide, bis(2,6-dimethoxyphenyl)-(2,4,4-tridecylpentyl)phosphine oxide, and the like. Specific examples of the compound can be exemplified by: i. phenyl·1&gt;2•propane-2-yl (o-ethoxy-carbyl) anthracene, 1,2-octanedione, phenylthio)-2-( 0-benzoquinone)], 1-phenyl•1,2-butanedione_2-(o-nonyloxycarbonyl)anthracene, 13-diphenylpropanetrione-2-(o-ethoxycarbonyl)肟, ethyl ketone, 1 [9 ethyl _6 (2 decyl phenyl fluorenyl)-9H-carbazol-3-yl] _, 1 _ (〇 醯 醯 醯 肟 。). Specific examples of the diphenylfluorenone compound having an amine group include 4,4-bis(didecylamino)benzophenone and 4,4·bis(monoethylamino)benzophenone. Wait. The benzoic acid vinegar having an amine group may be exemplified by p-didecylaminobenzoic acid ethyl ester, p-didecylaminobenzoic acid, 2-ethylhexanyl, p-diethyl Aminobenzoic acid, ethyl acetate, and the like. In the negative photosensitive resin composition of the present invention, (8) photopolymerization is started, and the content of the content is not limited, and is preferably G] wt% in the solid content of the quinoid photosensitive resin composition. Above 2G wt% or less. By setting the content of the (B) photopolymerization initiator to the above range, the curing can be sufficiently performed, and the residual polymerization initiator can be prevented from eluting or the like to ensure solvent resistance. The negative photosensitive resin composition of the present invention comprises (c) a polyfunctional single light irradiation, and the (6) polyfunctional monomer is polymerized by the above (8) photopolymerization initiator to form the negative (tetra) photoresin of the present invention. The exposed portion of the object becomes insoluble with respect to the alkaline aqueous solution, and a negative pattern can be formed. The term "multifunctional monomer" means having at least two or more B groups in the molecule, and the combination of the unsaturated double bonds is not particularly limited to S, and the preferred valer is easy to carry out radical polymerization with (meth) propyl group. The multi-functional single 201142506 body. Further, from the viewpoints of sensitivity and hardness, it is preferred that (c) the double bond of the polyfunctional monomer when 1 is 80 g/naoi or more and 400 g/mol or less. Examples of the (C) polyfunctional monomer include diethylene glycol diacrylate, diethylene glycol monopropionic acid S, tetraethylene glycol diacrylate vinegar, diethylene glycol dimercapto acrylate, and triethylene glycol. Alcohol dimercapto acrylate, tetraethylene glycol dimercapto acrylate, trihydroxy decyl propane di acrylate, trihydroxy decyl propane triacrylate, trishydroxy propyl propane dimethacrylate, trimethylol Propane trimethacrylate, 1,3-butanediol diacrylate, 13-butanediol dimethacrylate, neopentyl glycol diacrylate, 1,4-butanediol diacrylate, 1, 4-butanediol dimethacrylate, 〗 6, 6-hexanediol diacrylate, 1,9-nonanediol dimercapto acrylate, iota, 1 癸 癸 diol dimethacrylate Methyl-bicyclic tert-butyl acrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol tridecyl acrylate, pentaerythritol tetradecyl acrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, Tripentaerythritol heptaacrylate, tripentaerythritol octaacrylate, Pentaerythritol non-acrylic acid ester, pentaerythritol decaacrylate, pentaerythritol eleven acrylate, pentaerythritol dodecyl acrylate, dipentaerythritol heptayl acrylate, tripentaerythritol octa methacrylate, tetrakis pentaerythritol nonyl acrylate, four Pentaerythritol decamethacrylate, pentaerythritol eleven methacrylate, pentaerythritol decyl acrylate, dihydroxy decyl tricyclodecane diacrylate, ethoxylated bisphenol A diacrylate , 9,9·bis[4_(2-propenyloxyethoxy)benzene, 9,9-bis[4_(2-methylpropenyloxyethoxy)phenyl]indole 9,91 [4-(2-Methylacryloxyethoxyethoxy)_3_tolyl] '(2_ propylene oxime ^ 21 201142506 propoxy)-3-fluorenyl phenyl], 9,9_ double ##·Acryl-based ethoxy)_3,5·dimethylphenyl]anthracene, 9,9-bis[4-(2·indolyl decyloxyethoxy)_3,5-dimethylbenzene Base] second class. Among them, pentaerythritol tetrapropylene vinegar, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, tripentaerythritol heptaacrylate, tripentaerythritol octaacrylate, and the like are preferable from the viewpoint of improvement in sensitivity. Further, from the viewpoint of improvement in hydrophobicity, dihydroxyindenyl tricyclopyrene diacetin is preferred, di-methyl-tricyclic tert-butyl dimethyl acrylate, ethoxy group is preferred. Bisphenol A diacrylate, 9,9-bis[4_(2-propenyloxyethoxy)phenyl]anthracene, and the like. In the negative photosensitive resin composition of the present invention, (C) polyfunctionality is not contained in the content of the film, and may be selected from the negative photosensitive resin according to the principle of the use of the product. The solid umbrella of the object is 10 wt% or more and 6 wt% or less. # = The negative photosensitive resin composition of the invention contains (D) a ruthenium compound and contains (D) a dysfunctional compound, and the obtained cured film can be subjected to moist heat resistance. It is known that the resin of the county is derived from the hydrophilicity of Cheng, g = the hardened film can be made wet by containing (9) bismuth compound. It is known that a part of zirconium compound is known for polyfluorene. It has an effect of improving the heat and humidity resistance (see Patent Document 1). However, in the case of the recording, 'the money is red and only the hydrophobic group is hidden. As a result, the hydrophilic group such as the J group is rich, and it is not limited to the section. Oxygen burning, as '...' The alkali-soluble resin containing a carboxyl group in October can be found for the first time by the inclusion of the (D: 22 201142506 zirconium compound to improve the heat and humidity resistance of the cured film. Although it is not clear, it is considered that: (D) the zirconium compound forms a crosslinked structure by reacting a plurality of carboxyl groups of the base-soluble resin with (A) a carboxylic acid equivalent of 2 〇〇g/m 〇丨 or more to form a crosslinked structure. The film density is increased, and (4) the hydrophilicity derived from the silk is reduced, whereby the heat resistance of the obtained cured film is improved. (D) The zirconium compound is not particularly limited as long as it contains a ruthenium atom, for example, Preferably, the average particle diameter is below 100 nm. The cerium oxide particles or the compound represented by the formula (1). The average particle diameter of the oxidized erroneous particles is more than 40 knuckles. # By making the average particle diameter of the oxidized particles to be nm or less, the obtained cured film can be prevented from being cloudy. [Chemical 2]

23 201142506 平均粒徑為100 nm以下之氧化锆粒子可使用市售 品,具體例可列舉:「BAILAR Zr_C20 (商品名)」(平均粒 徑為20 nm、多木化學股份有限公司製造)、「NanoUse OZ-30M(商品名)」(平均粒徑為7nm)(曰產化學工業股 份有限公司製造)、「ZSL-10T (商品名)」(平均粒徑為15 nm)、「ZSL-l〇A(商品名)」(平均粒徑為7〇nm)(以上由 DAIICHI KIGENSO KAGAKU KOGYO CO.,LTD.製造) 等。 於通式(1)中’ R1可列舉曱基、乙基、正丙基、異 丙基、正丁基、第二丁基、苯基、乙烯基等◦其中自化合 物穩定之方面考慮,較佳的是正丙基、正丁基、苯基。R2 及R3可列舉氫、甲基、乙基、正丙基、異丙基、正丁基、 第二丁基、第三T基、苯基、乙縣、甲氧基、乙氧基、 正丙氧基、異丙氧基、正m丁氧基、¥氧基等。 其中自合成谷易、且化合物穩定之方面考慮,較佳的是曱 基、第二丁基、苯基、曱氧基、乙氧基。 通式⑴所表示之化合物例如可列舉四正丙氧基鍅、 四正丁氧絲、四第二正了氧絲、四笨氧絲、四乙酿 丙雜、四(2,2,6,6-四甲基_3,5-庚二酮基)結、四乙醯乙酸 甲麟、四;:醯乙酸乙雜、四丙二酸曱、四丙二酸 乙、:本曱醯基丙酮鍅、四(二苯曱醯曱烷)鍅、單正 丁氧基乙醯丙酮雙(乙醯乙酸乙酿)鍅、單正丁氧基乙醯乙 酸乙酯雙(乙醯丙酮)梦里 ^. 奴 m皁正丁氧基三乙醯丙酮鍅、單正 丁氧基二乙醯丙鲷锆、二正丁氧基雙(乙醯乙酸乙醋)锆、 24 201142506 -· ---x--- 二正丁氧基雙(乙醯丙酮)錯、二正丁氧基雙(乙基丙二酸酯) 錯、一正丁氧基雙(笨甲酿丙酮)錯·、二正丁氧基雙(二苯曱 醯甲烷)锆等。其中自於各種溶劑中之溶解性及/或化合物 之穩定性之方面考慮,較佳的是四正丙氧基鍅、四正丁氧 基鍅、四苯氧基锆、四乙醯丙酮鍅、四(2,2,6,6_四曱基_3,5_ 庚二酮基)鍅、四丙二酸甲酯鍅、四丙二酸乙酯锆、四乙醯 乙酸乙酯锆、二正丁氧基雙(乙醯乙酸乙酯)鍅以及單正丁 氧基乙醢丙酮雙(乙醯乙酸乙酯)錯。 於本發明之負型感光性樹脂組成物中,(D)錯化合物 之含量並無特別之限制,於平均粒徑為1〇〇 nm以下之氧 化錘粒子之情形時較佳的是於負型感光性樹脂組成物之固 形物中為1 wt%以上6〇 wt%以下,於除此以外之(D)錯 化合物之情形時較佳的是於負型感光性樹脂組成物之固形 物中為0.1 wt%以上10 wt%以下。藉由使(D)鍅化合物 之含量為上述範圍,可以高水準而兼顧透明性、耐濕熱性。 本發明之負型感光性樹脂組成物亦可含有聚合抑制 =°藉由含有聚合抑制劑,可使樹脂組成物之保存穩定性 提高’且可使顯影後之解像度提高。聚合抑制劑之含量較 佳的是於負型感光性樹脂組成物之固形物中為〇 〇丨wt〇 上1 wt%以下。 聚合抑制劑之具體例可列舉苯酚、鄰苯二酚、間笨二 酚、對笨二酚、4_第三丁基鄰苯二酚、2,6_二(第三丁基)· 對甲紛、啡噻嗪、4_甲氧基苯酚等。 本發明之負型感光性樹脂組成物亦可含有紫外線吸收 25 201142506 劑。藉由含有紫外線吸收劑,可使所得之硬化膜之耐光性 提高’於必須圖案加工之用途中使顯影後之解像度提高。 紫外線吸收劑可無特別限定地使用公知之紫外線吸收劑, 自透明性、非著色性之方面考慮,可較佳地使用苯并三唑 系化合物、二苯曱酮系化合物、三嗪系化合物。 苯并三唾系化合物之紫外線吸收劑可列舉:2_(2H苯 并三唑-2-基)苯酚、2-(2H-苯并三唑-2-基)-4,6-第三戊基苯 酚、2_(2H苯并三唑-;2-基)_4_(i,i,3,3_四甲基丁基)苯酚、 2(2Η-苯并三唑-2-基)-6-十二烷基-4-甲基苯酚、2-(2,-羥基 -5’-曱基丙烯醯氧基乙基苯基)_2Η·笨并三唑等。二苯曱酮 系化合物之紫外線吸收劑可列舉:2-羥基·4_曱氧基二苯曱 酮等。三嗪系化合物之紫外線吸收劑可列舉:2·(4,6二苯 基-1,3,5三嗪-2-基)-5-[(己基)氧基]-苯酚等。 本發明之負型感光性樹脂組成物亦可含有溶劑。自可 使各成分均句地溶解、使所得之塗佈膜之透明性提高之方 面考慮,較佳的是使用具有醇性經基之化合物或者具有羰 基之環狀化合物。亦可使用2種以上該些化合物。而且, 更佳的是大氣壓下之沸點為11(rc以上25〇〇c以下之化合 物。藉由使沸點為ll〇°C以上,可於塗膜時適度地進行乾 燥’。獲得無塗佈不均之良好塗膜。另一方面,於使沸點為 25 0 C以下之情形時,可將膜中之殘存溶劑量抑制至較少, 進一步減低熱硬化時之膜收縮,因此獲得更良好之平坦性。 具有醇性羥基且大氣壓下之沸點為U(y&gt;c以上25〇〇c 以下之化合物之具體例可列舉:丙酮醇、3羥基_3曱基_2_ 26 201142506 丁_、4-、經基-3-曱基i丁酮、5_經基戊_、4-經基-4_ 曱基-2-戊酮(二丙酮醇)、乳酸乙g旨、乳酸丁§旨、乳酸丁 醋、丙二醇單曱醚、丙二醇單乙醚、㊉二醇單正丙鍵、丙 二醇單正丁&amp;|、丙二醇單第三丁醚、3巧氧基小丁醇、3· 曱基-3·曱氧基小丁醇等。該些化合物中,自保存穩定性之 觀點考慮較佳的是二和瞒,自階梯覆蓋性之方面考慮可 特佳地使用丙二醇單第三丁醚。 一 具有羰基且大氣壓下之沸點為lure以上25〇t以下 之環狀化合物之具體例可列舉:丫_丁内酯、丫_戊内酯、δ· ,酯、碳酸丙二酯、Ν-甲基吡咯啶鲷、環己酮、環庚酮 等。該些化合物中可特佳地使用γ-丁内酯❶ 而且,本發明之負型感光性樹脂組成物亦可含有上述 以外之溶劑。例如可列舉:乙二醇二曱醚、乙二醇二乙醚、 乙二醇二丁醚、二乙醚等醚類;丁酮、乙醯丙酮、曱基丙 基酮、曱基丁基_、曱基異丁基_、二異丁基酮、環戍鋼、 2·庚酮等賴;二曱基㈣胺、二甲基乙酿胺等酸胺類; 乙酸乙酯、乙酸丙酯、乙酸丁酯、乙酸異丁酯、乙二醇單 乙醚乙酸酯、丙二醇單曱醚乙酸酯、乙酸_3_甲氧基丁酯、 乙酸-3-曱基-3-曱氧基丁酯等乙酸酯類等。 溶劑之含量並無特別之限制,可根據塗佈方法等而以 任意之量使用。例如於藉由旋塗而形成膜之情形時,通常 使/谷劑之含量為負型感光性樹脂組成物整體之5〇 以 上95 wt%以下。 本發明之負型感光性樹脂組成物亦可含有促進樹脂組 27 201142506 硬化或者使硬化變料之各種硬化劑。硬化劑可並 物地使用公知之硬化劑,具體例可列舉含氮有機 樹脂硬化劑、各種金屬醇鹽、各種金屬螯合物化 :、異氰_化合物及其聚合物、,基化三聚氛胺衍 、說甲基化脲衍生物等。亦可含有2種以±該些化合 t其中,自硬化狀穩定性、所得之塗佈狀加工性等 考慮’可較佳地使用金屬螯合物化合物 胺衍生物、羥甲基化脲魅物。 I化-聚氰 聚石夕氧烧可藉由酸而促進硬化,因此於本發明之負型 感光性樹脂組成物中使用聚矽氧烷之情形時,亦可含有熱 g文產生劑等硬化觸媒。熱酸產生劑可並無特別限定地使用 公知之熱酸產生劑,可列舉芳香族重氮鹽、銃鹽、二芳基 錤鹽、三芳基縫、三^:基㈣等各種鑌齡化合物、橫 酸酯、鹵化合物等。 、為了提高塗佈時之流動性,本發明之負型感光性樹脂 組成物亦可含有各種氟系界面活_、聚魏系界面活性 劑等各種界面活㈣。界面糾狀㈣並無特別之限 制,例如可使用“Megafac(註冊商標),,「F142D(商品名)」、 「Π72(商品名)」、「F173(商品名)」、「F183 (商品名)」、 「F445 (商品名)」、「F47()(商品名)」、「F475 (商品名)」、 「F477 (商品名)」(以上由大曰本油墨化學工業股份有限 公司製造)、「NBX-15 (商品名)」、「FTX_218 (商品名)」 (Neos股份有限公司製造)等氟系界面活性劑,「Βγκ 333 (商品名)」、「ΒΥΚ-301(商品名)」、γβυκ_331(;商品名)」、 28 201142506 「ΒΥΚ-345 (商品名)」、「ΒΥΚ-307 (商品名)」、「ΒΥΚ-352 (商品名)」(BYK-CHEMIE JAPAN K.K.製造)等聚矽氧 系界面活性劑、聚氧化烯系界面活性劑、聚(曱基)丙烯酸 醋系界面活性劑等。亦可使用2種以上該些化合物。 本發明之負型感光性樹脂組成物亦可視需要含有溶解 抑制劑、穩定劑、消泡劑等添加劑。 本發明之負型感光性樹脂組成物之固形物濃度並無特 別之限制’可根據塗佈方法等而使用任意量之溶劑或溶 質。例如’於如後所述那樣藉由旋塗而形成膜之情形時, 通常使固形物濃度為5 wt%以上50 wt%以下。 以下對本發明之負型感光性樹脂組成物之代表性製造 方法加以說明。 例如,將(B)光聚合起始劑、(D)銼化合物與其他 添加劑添加於任意溶劑中,進行攪拌使其溶解後,添加(A) 緩酸當量為200 g/mol以上1,400 g/mol以下之鹼可溶性樹 脂以及(C)多官能單體而進一步攪拌2〇分鐘〜3小時。 過據所得之溶液,獲得負型感光性樹脂組成物。 舉例對使用本發明之負型感光性樹脂組成物的硬化膜 之形成方法加以說明。 、 藉由微凹板印刷式塗佈、旋塗、浸塗、淋幕式塗佈 ,塗、喷塗、狹缝塗佈等公知之方法而將本發‘負型威 光性樹脂組成物塗佈於基底基板上,藉由加熱板、供箱等 加,裝置進行預烘烤(prebake)。預烘烤是於5〇ΐ、二 ΜΟΐ以下之範圍内進行3G秒〜3〇分鐘,預烘烤後之膜厚 29 201142506 較佳的是〇·1 μιη以上15 μιη以下。 於預烘烤後’使用步進機、鏡面投影光罩對準曝光機 (ΜΡΑ)、平行光線光罩對準曝光機(以下稱為PLA)等 曝光機’介隔所期望之鮮或者並不介 〜4,000 J/m2左右(波長365 nm曝光量換罩。 曝光之光源並無限制,可使用i光線、g光線、11光線等紫 外線或者KrF(波長為248 nm)雷射、ArF(波長為193證) 雷射等。其後,亦可對該膜進行曝光後烘烤,亦即,於加 熱板、烘箱等加熱裝置中以150。〇以上45(rc以下之範圍而 加熱1小時左右。 本發明之負型感光性樹脂組成物較佳的是於利用PLA 之曝光下的感光度為100 j/m2以上4,〇〇〇 j/m2以下。所述 之利用PLA之圖案化曝光下之感光度例如可藉由以下之 方法而求出。使用旋轉式塗佈機以任意之轉速將組成物旋 塗於石夕晶圓上,使用加熱板於12〇。〇下預烘烤2分鐘,製 作膜厚為2 μιη之膜。使用PLA (佳能股份有限公司製造 「PLA-501F (商品名)」)’用超高壓水銀燈而介隔感光度 測定用灰階光罩而對所製作之臈進行曝光後,使用自動顯 影裝置(TAKIZAWA CO.,LTD.製造「AD-2000 (商品名)」) 於0.4 wt%氫氧化四曱基銨水溶液中進行任意時間之覆液 式顯影,其次於水中沖洗30秒。將於所形成之圖案中,以 1比1之寬度解像出30 μιη之線與間隙圖案的曝光量作為 感光度而求出。 於圖案化曝光後’藉由顯影而使曝光部溶解,玎獲得 201142506 —-' -r - 負型之圖案。顯影方法較 方法而於顯影 W稭由偷、_、覆液等 之驗性顯影液。;=二0;鐘。顯影液可使用公知 酸鹽、碟酸略舉含有驗金屬之氫氧化物、碳 乙醇、單乙;脸鹽、猶鹽等無機驗’2-二乙基胺基 驗等四級錢=等胺類’四甲基氮氧化録、膽 較佳的上的水溶液等。於顯影後, 之r囹肉仓水進仃沖洗,繼而亦可於5〇°C以上150°C以下 内進行絲烘烤。其後,將 中’於ucrc以上28(rc以下之範圍内進行^等 左右之熱硬化,藉此獲得硬化膜。 η由本t明之負型感光性樹脂組成物所得之硬化膜較佳 ^是錯原子含量為讀wt%以上7 5 wt%以下、碳原子含 量為25趟以上8〇 wt%以下、石夕原子含量$ 〇 $以上 O wt/o以下。藉由使其為上述範圍,可平衡良好地維持透 射率、硬度、耐酿性n解像度較佳狀2〇卿以 下。硬化膜之膜厚並無特別之限制,較佳的是〇1 μιη以上 15 μιη以下。而且,較佳的是於膜厚丨5 μιη中硬度為4η 以上、透射率為90%以上。另外,透射率是指波長為4〇〇nm 下之透射率。硬度或透射率可藉由選擇曝光量、熱硬化溫 度而調整。 本發明之負型感光性樹脂組成物硬化而所得之硬化膜 可用於觸控面板用保護膜、各種硬塗材、TFT用平坦化膜、 彩色濾光片用保護層、抗反射薄膜等各種保護膜以及光學 渡光片、觸控感測器用絕緣膜、TFT用絕緣膜、彩色滅光 201142506 件等中。於該些中’自具有高的硬度與透 以m考慮’可適㈣作觸控面板用保護膜。觸控面 i等舉電賴式、光學式、電磁感應式、靜電容 =太2谷式觸控面板要求特別高之硬度,因此可適宜 使用本發明之硬化膜。 另外士發明之負型感光性樹脂組成物硬化而所得之 硬化f具有高的耐濕熱性,因此可輕㈣金屬配線保護 膜藉,升乂成於金屬配線上,可防止由於金屬之腐姓等而 ^«成之劣化(導電性降低等)。所保護之金屬並無特別之限 制,例如可列舉銅、銀m、鈦、ιτ〇、IZ〇 (氧 化銦鋅)、AZO (添加有銘之氧化辞)、Zn〇2等。特別是可 於含有之觸控面板構件中適宜地使用。此處所謂之觸控 面,構件是指具備電極以及絕緣膜及/或保護膜之玻璃^ 者薄膜基板,可用作觸控面板用感測器基板之構件。 觸控面板構件之製作方法並無特別之限制,例如可列 舉如下所述之方法。於玻璃基板上以任意膜厚形成透明電 極薄膜,經過藉由光蝕微影技術對光阻材料進行圖案加 工、進行該透明電極之利用蝕刻液之化學藥品蝕刻、利用 剝離液之保護層剝離步驟,製作對形成X軸電極以及γ軸 電極之一部分的透明電極進行了圖案加工之玻璃基板(圖 Ι-a)。於透明電極上形成IT〇、IZ0、AZ〇、Zn〇2、錫錄酸 等金屬氧化物或金、銀、銅、鋁等金屬之薄膜等。該些透 明導電極可藉由真空蒸鍍、濺鍍、離子電鍍、離子束蒸鍍 等物理性方法或化學氣相沈積法等自先前開始進行之方法 32 201142506 而形成。繼而於與隨後所形成之電極交叉之部位形成由本 發明之負型感光性樹脂組成物所得之硬化膜而作為透明絕 緣膜(圖l-b)。其後,以任意膜厚而形成電極薄膜後,經 由光阻圖案加工、蝕刻、光阻劑剝離之步驟而形成與IC 驅動連接之配線以及Y轴電極導通配線(圖l_c)。作為此 處之電極’除了所述透明電極材料以外,亦可列舉銦、錮/ 紹/鉬積層膜(MAM)、钥-銳合金、鉻、鈦、鈦/銘/鈦積層 膜(TAT)、鋁等。最後’於基板端部(圖之上邊左部 以及右邊下部)之與1C驅動連接之部位以外的部分,利用 由本發明之負型感光性樹脂組成物所得之硬化膜而製作透 明保護膜,獲得觸控面板構件。圖2是上述觸控面板構件 製作例之剖面圖。 [實例] 以下’使用該實例對本發明加以說明,但本發明之態 樣並不限定於該些實例。 (合成例1 :聚矽氧烷溶液(i)之合成) 於500 mL之三口燒瓶中裝入甲基三曱氧基矽烷47 67 g (0.35 mol)、苯基三甲氡基矽烷39 66 g (〇 2〇咖1)、3-三曱氧基矽烧基丙基琥珀酸26.23 g (0.10 mol)、γ-丙烯醯 基丙基三曱氧基矽烷82.04 g (〇·35 mol)、雙丙酮醇(以下 稱為DAA) 185.08 g,浸潰於4〇〇c之油浴中一面攪拌一面 藉由滴液漏斗以10分鐘添加在水 55.8 g中溶解有磷酸 0.391 g (相對於裝入單體而言為〇 2 wt%)之磷酸水溶液。 於40°C下攪拌1小時後,將油浴溫度設定為7(rc而攪拌1 33 201142506 味ί—步將油浴以3G分鐘升溫至U5°c。於升溫開始 =時後,溶液之内溫達到跡C,其後進行2 溫為_〜110。〇。於反應中蒸掏出合計· :為㈣物之作、水。於所得之聚錢燒之DAA溶 =以聚合滅度成為* wt%之方綠加daa而獲得 聚石夕氧院溶液⑴。另外,如Gpc _定所得之聚合物 ^重量Ϊ均分子量(MW),為8,_ (聚苯乙稀換算)。而 且’緩酸當量為620 g/m〇l。 (合成例2 :聚矽氧烷溶液(ii)之合成) 之三口燒瓶中裝入甲基三曱氧基魏54 48 g__( m〇1)、苯基三甲氧基石夕烷39.66 g (〇.20 m〇1)、3_ 二甲氧基魏基丙基號拍酸13 12 g ( 〇 〇5 _)、丫酿 ,丙基三曱氧基魏 82.04 g ( 〇·35 mGl)、DAA 174 -, =潰於4G°C之油斜-面縣—面藉由滴㈣斗以1〇分 知添加在水54·9 g巾溶解有磷酸Q仍g(相對於裝入單體 而言為0.2 wt%)之磷酸水溶液。其次,於與合成例i相 :之條件下進行加熱·,蒸顧出合計n〇 物之甲醇、水。於所狀妙氧仅DAA溶液中, ^物遭度絲4〇 wt%a麵加DAA喊得㈣氧烧溶 液(nj。另外,藉由GPC _定所得之聚合物之重量平均 分子量(Mw)’結果為6,_ (聚笨乙稀換算)。而且 酸當量為1,190 g/mol。 (合成例3 :聚矽氧烷溶液(出)之合成) 於500 mL之三口燒瓶中装入甲基三曱氧基矽烷27&amp; 34 201142506 g (0.20 mol)、苯基三甲氧基矽烷 39.66 g (0.20 mol)、3-二曱氧基發院基丙基號拍酸65.58 g ( 0.25 mol)、γ-丙稀釀 基丙基三曱氧基矽烷82.04 g (0.35 mol)、DAA 198.02 g, 浸潰於40°C之油浴中一面攪拌一面藉由滴液漏斗以1〇分 鐘添加在水58.5 g中溶解有鱗酸〇,416 g(相對於裝入單體 而言為0,2 wt%)之磷酸水溶液。其次,於與合成例i相 同之條件下進行加熱攪拌,蒸餾出合計13〇 g之作為副產 物之曱醇、水。於所得之聚矽氧烷之DAA溶液中,以聚 合物濃度成為40 wt%之方式添加DAA而獲得聚矽氧烷溶 液(iii)。另外,藉由GPC而測定所得之聚合物之重量平 均分子量(Mw),結果為7,〇〇〇 (聚笨乙烯換算)。而且, 羧酸當量為280 g/mol。 (合成例4 :聚石夕氧烧溶液(iv)之合成) 於500 mL之三口燒瓶中裝入甲基三甲氧基石夕院则$ 8一(〇.2〇111〇1)、苯基三曱氧基石夕烷39 66 §(〇2〇咖1)、3_ 三甲氧基魏基丁酸41.66 g (〇.2G _)、γ·丙驗基丙基 三曱氧基石夕烧 82.04 g ( 〇·35 m〇1)、DAA 182 4〇°C之油浴中-面勝-面藉由滴液漏斗以iq分=添加 於水54.0g中溶解有魏〇.395 g(相對於褒而二 〇.2 wt%)之雜水溶液。其次,於與合成m相同牛 :進行加臟’蒸顧出合計12〇 g之作為副產= :、水。於所得之聚石夕氧燒之DAA溶液 = 度成為40 wt%之方式添加DAA ,物濃 (iv)。另外,萨由GPC而、日丨〜 又件&amp;石夕氣烷溶液 W另外錯由収所得之聚合物之重量平均 35 201142506 。而且,叛 分子量(Mw),結果為8,〇〇〇 (聚苯乙烯換算) 酸當量為640 g/mol。 (合成例5 . t碎氧烧溶液(v)之合成) 於500 mL之三口燒瓶中裝入甲基三甲氧基魏681〇 g (0.50 m〇l)、苯基三f氧基石夕烧99 15 g (〇 % 〇⑷、&gt; 曱基-3·甲氧基丁醇(以下稱為MMB) 143 37 g,芦 由浴Γ面攪拌一面藉由滴液漏斗以10分:添加 在水54.0 g中溶解有磷酸〇.167g(相對於裝入單體而言為 0.1 wt%)之磷酸水溶液。其次,於與合成例ι相^ 下進行加熱解,麵出合計12G g之作為副產狄甲 醇、水。於所得之聚魏烧之MMB溶液中,以聚合物濃 度成為40 wt%之方式添加MMB而獲得聚矽氧&amp;溶液 (V)。另外,藉由GPC而測定所得之聚合物之重量平均分 子量(Mw),結果為8,000 (聚苯乙烯換算)。而且羧: 當量為0 g/mol。該合成例5是專利文獻!中所記載之態樣。 (合成例ό :丙烯酸樹脂溶液(a)之合成)〜7 於50〇1^之燒瓶中裝入2,2,_偶氮雙(異丁腈)3呂、丙 二醇甲醚乙酸酯(以下稱為PGMEA) 5〇g。其後,裴入甲 基丙稀酸23·0 g、甲基丙烯酸苄酯315 g、甲基丙^酸三 環[5.2.1.〇2’6]癸燒I基醋32 8 g,於室溫下充分擾掉,藉由 起泡將燒瓶内充分地氮氣置換後,於7〇t下進行5小^之 加熱麟。其次,於所得之紐巾添加甲基㈣酸縮水甘 油酯12.7 g、二曱基苄基胺i g、對甲氧基苯酚〇 PGMEA 100 g,於赃下進行4小時之加熱麟,獲得丙 36 201142506 烯酸樹脂溶液(a)。以固形物濃度成為40 wt〇/〇之方式於所 得之丙烯_脂溶液⑷巾添力npGMEA。丙烯酸樹脂之 重里平均分子量為18卿,缓酸當量為56()g/m〇卜 (合成例7 .丙烯酸樹脂溶液(b)之合成) 於500 ml之燒瓶中裝入2,2,-偶氣雙(異丁猜) PGMEA (丙二醇曱醚乙酸酉旨)5〇 g。其後,裝入曱 酸16.8 g、甲基丙烯酸节,34 4 g、甲基丙烯酸三二 [5.2丄0 ’ ]癸烧各基自旨36·9 g ’於室溫下充分擾摔藉= 泡將燒瓶内充分地氮氣置換後,於7〇。〇下進行5小 熱授拌。其次’於所狀溶液巾添加甲基⑽酸縮水甘、二 酯11.9g、二曱基节基胺lg、對甲氧基苯盼〇2^? / 100 g,於9(TC下進行4小時之加熱㈣,獲得 脂溶液(b)。以固形物濃度成為4〇wt%之方式於夕樹 烯酸樹脂溶液(b)中添加PGMEA。丙烯酸樹脂之=旦丙 均分子量為13,000 ’羧酸當量為89〇g/mol。曰 里平 (合成例8 :丙烯酸樹脂溶液(c)之合成) 於500 ml之燒瓶中裝入2,2,_偶氮雙(異丁浐 PGMEA50g。其後,裝入曱基丙烯酸33 9 g月g、 苄酯34.4 g、曱基丙烯酸三環[5.2.1.02,6]癸烷8 ^,烯酸 g,於室溫下充分攪拌,藉由起泡將燒瓶内充分地36·9 後,於7(TC下進行5小時之加熱攪拌。其次,於置, 液中添加甲基丙烯酸縮水甘油酯14·〇 g、二甲義戶1仔^溶 g、對甲氧基苯酚0.2 g、PGMEA 100 g,於9〇&amp;节基胺1 小時之加熱攪拌’獲得丙烯酸樹脂溶液(c)。下進行4 从固形物濃 37 201142506 度成為40 wt%之方式於所得之丙烯酸樹脂溶液⑷中添 加PGMEA。丙烯酸樹月旨之重量平均分子量為24,_,竣 酸當量為340 g/mol。 (合成例9 .丙烯酸樹脂溶液(d)之合成) 於5〇〇 ml之燒瓶中裝入2,2,-偶氮雙(異丁腈)3 g、 P⑽EA 50 g。其後,|入甲基丙烯酸8 24 g、ψ基丙稀酸 苄酯35.58、曱基丙烯酸三環[521〇2,6]癸烷_8_基酯455 g’於室溫下充分攪拌,藉由起泡將燒瓶内充分地氮氣置換 後’於7G°C下進行5小時之加紐拌^其次,於所得之溶 液中添加曱基丙稀酸縮水甘油醋g、二甲基节基胺1 g對曱氧基本齡0.2 g、PGMEA 100 g,於9〇°c下進行4 小時之加熱攪拌,獲得丙烯酸樹脂溶液(d)。以固形物濃 度成為40 wt%之方式於所得之丙烯酸樹脂溶液(d)7中添 加PGMEA。丙烯酸樹脂之重量平均分子量為9,〇〇〇,羧酸 當量為 4,600 g/mol。 (合成例10 :丙烯酸樹脂溶液(e)之合成) 於5〇0 ml之燒瓶中裝入2,2,_偶氮雙(異丁腈)3 g、 PGMEA50g。其後’裝入曱基丙烯酸69 5 g、甲 7.9 g , 9.9 於室溫下充分攪拌,藉由起泡將燒瓶内充分地氮氣置換 後,於7〇°C下進行5小時之加熱攪拌。其次,於所得之溶 液中添加甲基丙烯酸縮水甘油酯12.8 g、二曱基节基胺i g、對甲氧基苯酚0.2 g、PGMEA 100 g,於9(TC下^行4 小時之加熱攪拌,獲得丙烯酸樹脂溶液(e)。以固形物濃 38 201142506 度成為40 wt%之方式於所得之丙烯酸樹脂溶液(e)中添 加PGMEA。丙烯酸樹脂之重量平均分子量為40,000,羧 酸當量為140 g/mol。 將合成例1〜合成例9之組成匯總示於表1中。 39 201142506 七^06卜£ 【Id 單體組成(mol%) 苯基三甲氧基矽烷(20) 苯基三甲氧基矽烷(20) 苯基三曱氧基碎烷(20) 苯基三甲氧基矽烷(20) 苯基三甲氧基矽烷(50) 甲基丙烯酸三環[5.2.1.02,6]癸烷-8-基酯(25) 曱基丙烯酸三環[5.2.1.02,6]癸炫-8-基酯(30) 甲基丙烯酸三環[5.2.1.02,6]癸烷-8-基酯(20) 曱基丙烯酸三環[5.2.1.02,6]癸烧-8-基酯(41) 曱基丙烯酸三環[5.2.1.02,6]癸烷-8-基酯(5) 甲基三甲氧基石夕烷 (35) 甲基三曱氧基石夕烷 (40) 甲基三曱氧基石夕烷 (20) 甲基三曱氧基矽烷 (25) 甲基三甲氧基石夕烷 (50) 曱基丙烯酸苄酯 (30) 甲基丙烯酸苄酯 (35) 甲基丙烯酸苄酯 (20) 曱基丙烯酸苄酯 (40) 甲基丙烯酸苄酯(5: γ-丙烯醯基丙基三曱氧基石夕烷(35) γ-丙烯醯基丙基三甲氧基石夕烷(35) γ-丙烯醯基丙基三甲氧基碎烷(35) γ-丙烯醯基丙基三甲氧基石夕烷(35) 塯 塄 装 Φ1 塄 Jc if Β- 塄 f C 装 B- 塄 td 塄 ίί ¢- 3-三曱氧基石夕烷基丙基琥珀 酸(10) 3-三曱氧基碎烷基丙基琥珀 酸⑸ 3-三甲氧基矽烷基丙基琥珀 酸(25) 4-三甲氧基石夕烷基丁酸(20) 曱基丙烯酸(30) 甲基丙烯酸(20) 甲基丙烯酸(45) 甲基丙烯酸(4) 甲基丙烯酸(80) 聚矽氧烷溶液(i〕 聚矽氧烷溶液 ㈤ 聚矽氧烷溶液 (iii) 聚矽氧烷溶液 (iv) 聚矽氧烷溶液 (V) 丙烯酸樹脂溶液 (a) 丙烯酸樹脂溶液 ⑻ 丙烯酸樹脂溶液 (C) 丙烯酸樹脂溶液 ⑷ 丙嫜酸樹脂溶液 (e) 合成例 1 合成例 2 合成例 3 合成例 4 合成例 5 合成例 6 合成例 7 合成例 8 合成例 9 合成例 10 201142506 將各實例、比較例中之評價方法表示如下。 (1) 透射率之測定 使用旋轉式塗佈機(Mikasa corporation製造之 「1H-360S (商品名)」)以500 rpm旋轉1〇秒後、以1,〇〇〇 rpm旋轉4秒而將所製作之負型感光性樹脂組成物旋塗於 5 cm見方之Tempax玻璃基板(旭于夕/力、予只板(株) 製造)上之後’使用加熱板(Dainippon Screen Mfg. Co.,Ltd. 製造之「SCW-636 (商品名)」)’於90°C下預烘烤2分鐘, 製作膜厚為2 μηι之膜。使用平行光線光罩對準曝光機(以 下稱為PLA)(佳能股份有限公司製造rPLA_5〇1F (商品 名)」)’將超高壓水銀燈作為光源而對所製作之膜進行曝 光’使用烘箱(ESPECCORP.製造之「IHPS-222」)而於空 氣中、230 C下固化1小時,製作膜厚15 μηι之硬化膜。 關於所得之硬化膜,使用紫外-可見光分光光度計 「UV-260 (商品名)」(島津製作所股份有限公司製) 測定400 nm之透射率。另外’使用Dainipp〇n Mfg23 201142506 Commercially available products can be used as the zirconia particles having an average particle diameter of 100 nm or less. Specific examples include "BAILAR Zr_C20 (trade name)" (average particle size is 20 nm, manufactured by Doki Chemical Co., Ltd.), NanoUse OZ-30M (trade name)" (average particle size: 7nm) (manufactured by Gifu Chemical Industry Co., Ltd.), "ZSL-10T (trade name)" (average particle size: 15 nm), "ZSL-l〇 A (trade name) (average particle diameter: 7 〇 nm) (above, manufactured by DAIICHI KIGENSO KAGAKU KOGYO CO., LTD.). In the formula (1), 'R1 may, for example, be an alkyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, a second butyl group, a phenyl group or a vinyl group, etc., from the viewpoint of stability of the compound, Preferred are n-propyl, n-butyl, phenyl. Examples of R2 and R3 include hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, third T-group, phenyl, ethyl, methoxy, ethoxy, and Propyloxy, isopropoxy, n-butoxy, oxy, etc. Among them, a mercapto group, a second butyl group, a phenyl group, a decyloxy group, and an ethoxy group are preferable from the viewpoint of synthesizing glutamic acid and stabilizing the compound. Examples of the compound represented by the formula (1) include tetra-n-propoxy fluorene, tetra-n-butoxy-oxygen, tetra-second-oxygen, tetradox, tetraethylidene, and tetrakis (2, 2, 6, 6-Tetramethyl_3,5-heptanedionate), tetraethylammonium acetate, and the following;: ethyl acetate, tetramethyl malonate, tetrapropyl malonate: sulfhydryl acetone Bismuth, tetrakis(diphenylnonane) oxime, mono-n-butoxyacetamidine acetonide (acetonitrile acetate), mono-n-butoxyacetic acid ethyl acetate double (acetamidine) Slaughter m soap n-butoxytriacetonitrile oxime, mono-n-butoxydiethyl hydrazide zirconium, di-n-butoxy bis(acetic acid ethyl acetate) zirconium, 24 201142506 -· ---x- -- Di-n-butoxy bis(acetamidineacetone), di-n-butoxy bis(ethylmalonate), one-n-butoxy double (stupidyl), and di-n-butoxy Bis (diphenylmethane) zirconium and the like. Among them, tetra-n-propoxy fluorene, tetra-n-butoxy ruthenium, tetraphenoxy zirconium, tetraethyl fluorene oxime, etc. are preferred from the viewpoints of solubility in various solvents and/or stability of the compound. Tetrakis(2,2,6,6-tetradecyl_3,5-heptanedionyl)anthracene, methyl tetramalonate, zirconium tetramalonate, zirconium tetraacetate, zirconium, di-n-butyl Butoxy bis(acetonitrile ethyl acetate) oxime and mono-n-butoxyacetamidine acetonide (acetic acid ethyl acetate) were wrong. In the negative photosensitive resin composition of the present invention, the content of the (D) dysfunctional compound is not particularly limited, and in the case of oxidized hammer particles having an average particle diameter of 1 〇〇 nm or less, it is preferably negative. The solid content of the photosensitive resin composition is 1 wt% or more and 6 wt% or less, and in the case of the (D) wrong compound other than the above, it is preferably in the solid matter of the negative photosensitive resin composition. 0.1 wt% or more and 10 wt% or less. By setting the content of the (D) ruthenium compound to the above range, transparency and heat and humidity resistance can be achieved at a high level. The negative photosensitive resin composition of the present invention may contain polymerization inhibition = ° by containing a polymerization inhibitor, and the storage stability of the resin composition can be improved', and the resolution after development can be improved. The content of the polymerization inhibitor is preferably 1 wt% or less on the 〇 〇丨 wt 固 in the solid content of the negative photosensitive resin composition. Specific examples of the polymerization inhibitor include phenol, catechol, m-diphenol, p-diphenol, 4-tert-butyl catechol, 2,6-di(t-butyl)·-para Convenient, phenothiazine, 4-methoxyphenol and the like. The negative photosensitive resin composition of the present invention may also contain an ultraviolet absorbing agent 25 201142506. By containing an ultraviolet absorber, the light resistance of the obtained cured film can be improved. The resolution after development is improved in applications where pattern processing is required. The ultraviolet absorber is not particularly limited, and a known ultraviolet absorber can be used. From the viewpoints of transparency and non-coloring property, a benzotriazole compound, a benzophenone compound, or a triazine compound can be preferably used. Examples of the ultraviolet absorber of the benzotrisal compound include 2-(2H benzotriazol-2-yl)phenol and 2-(2H-benzotriazol-2-yl)-4,6-tripentyl. Phenol, 2-(2H benzotriazole-; 2-yl)_4_(i,i,3,3-tetramethylbutyl)phenol, 2(2Η-benzotriazol-2-yl)-6-ten Dialkyl-4-methylphenol, 2-(2,-hydroxy-5'-mercaptopropenyloxyethylphenyl) 2 oxime, benzotriazole, and the like. Examples of the ultraviolet absorber of the benzophenone compound include 2-hydroxy-4-inoxodibenzophenone. The ultraviolet absorber of the triazine-based compound may, for example, be 2,6,6-diphenyl-1,3,5-triazin-2-yl)-5-[(hexyl)oxy]-phenol or the like. The negative photosensitive resin composition of the present invention may contain a solvent. It is preferred to use a compound having an alcoholic radical or a cyclic compound having a carbonyl group in view of the fact that the components are uniformly dissolved and the transparency of the obtained coating film is improved. Two or more of these compounds can also be used. Further, it is more preferable that the boiling point at atmospheric pressure is 11 (rc or more and 25 〇〇 c or less. By setting the boiling point to ll 〇 ° C or more, it is possible to dry appropriately at the time of coating the film.) On the other hand, when the boiling point is 25 ° C or less, the amount of residual solvent in the film can be suppressed to a small extent, and the film shrinkage at the time of thermosetting can be further reduced, thereby obtaining a better flatness. Specific examples of the compound having an alcoholic hydroxyl group and having a boiling point at atmospheric pressure of U (y> c or more and 25 〇〇 c or less include acetol, 3 hydroxy _ 3 fluorenyl _2 _ 26 201142506 _, 4-, By benzyl-3-mercapto ibupropanone, 5-pyl-p-pentyl-, 4-trans--4-ylmercapto-2-pentanone (diacetone alcohol), lactic acid, lactic acid, butyl vinegar , propylene glycol monoterpene ether, propylene glycol monoethyl ether, dodecyl alcohol mono-n-propyl bond, propylene glycol mono-n-butyl &amp; |, propylene glycol mono-tert-butyl ether, triterpene oxybutanol, 3 · decyl -3 曱 oxygen Small butanol, etc. Among these compounds, di- and fluorene are preferred from the viewpoint of storage stability, and it is particularly preferable from the viewpoint of step coverage. A propylene glycol mono-tert-butyl ether is used. Specific examples of the cyclic compound having a carbonyl group and having a boiling point of at least 25 〇t or less at atmospheric pressure include 丫-butyrolactone, 丫-valerolactone, δ·, ester, Propylene carbonate, hydrazine-methylpyrrolidinium, cyclohexanone, cycloheptanone, etc. Among these compounds, γ-butyrolactone oxime is particularly preferably used, and the negative photosensitive resin composition of the present invention is also The solvent other than the above may be contained, and examples thereof include ethers such as ethylene glycol dioxime ether, ethylene glycol diethyl ether, ethylene glycol dibutyl ether, and diethyl ether; butanone, acetamidine acetone, and mercaptopropyl ketone. a mercaptobutyl ketone, a decyl isobutyl ketone, a diisobutyl ketone, a cyclic ruthenium steel, a 2, heptanone, etc.; an acid amine such as a dimercapto (tetra)amine or a dimethyletheneamine; , propyl acetate, butyl acetate, isobutyl acetate, ethylene glycol monoethyl ether acetate, propylene glycol monoterpene ether acetate, acetic acid _3_methoxybutyl ester, acetic acid-3-mercapto-3- The content of the solvent is not particularly limited, and may be used in an arbitrary amount according to the coating method, etc., for example, by spin coating. In the case of forming a film, the content of the granule is usually 5 Å or more and 95% by weight or less of the entire negative photosensitive resin composition. The negative photosensitive resin composition of the present invention may further contain a promoting resin group 27 201142506 A curing agent which hardens or hardens the material. A hardening agent can be used in combination with a known hardening agent, and specific examples thereof include a nitrogen-containing organic resin hardener, various metal alkoxides, and various metal chelate compounds: isocyanide-compound And a polymer thereof, a trimeric amine derivative, a methylated urea derivative, etc., and may also contain two kinds of such compounds, such as self-hardening stability, and coating processability obtained, etc. It is considered that 'metal chelate compound amine derivative, methylolated urea charm can be preferably used. In the case where the polyoxyalkylene oxide is used in the negative photosensitive resin composition of the present invention, it can also be hardened by a heat generating agent or the like. catalyst. The thermal acid generator can be a known thermal acid generator, and examples thereof include various aromatic compounds such as an aromatic diazonium salt, a phosphonium salt, a diarylsulfonium salt, a triaryl sulphate, and a trisyl group (tetra). a horizontal acid ester, a halogen compound, and the like. In order to improve the fluidity at the time of coating, the negative photosensitive resin composition of the present invention may contain various interface activities such as various fluorine-based interface activities and poly-wei surfactants (4). The interface correction (4) is not particularly limited. For example, "Megafac (registered trademark), "F142D (product name)", "Π72 (product name)", "F173 (product name)", "F183 (trade name)" can be used. ), "F445 (product name)", "F47 () (product name)", "F475 (product name)", "F477 (product name)" (above) manufactured by Otsuka Ink Chemical Industry Co., Ltd. "Fluorine surfactants such as "NBX-15 (product name)" and "FTX_218 (product name)" (made by Neos Co., Ltd.), "Βγκ 333 (product name)", "ΒΥΚ-301 (product name)" , γβυκ_331 (product name), 28 201142506 "ΒΥΚ-345 (product name)", "ΒΥΚ-307 (product name)", "ΒΥΚ-352 (product name)" (BYK-CHEMIE JAPAN KK) A ruthenium-based surfactant, a polyoxyalkylene-based surfactant, a poly(fluorenyl) acrylate-based surfactant, and the like. Two or more of these compounds can also be used. The negative photosensitive resin composition of the present invention may optionally contain an additive such as a dissolution inhibitor, a stabilizer, or an antifoaming agent. The solid content concentration of the negative photosensitive resin composition of the present invention is not particularly limited. Any solvent or sol may be used depending on the coating method or the like. For example, when a film is formed by spin coating as will be described later, the solid content is usually 5 wt% or more and 50 wt% or less. A representative production method of the negative photosensitive resin composition of the present invention will be described below. For example, (B) a photopolymerization initiator, (D) a ruthenium compound, and other additives are added to any solvent, stirred and dissolved, and then (A) a slow acid equivalent of 200 g/mol or more and 1,400 g is added. Further, the base-soluble resin of /mol or less and (C) the polyfunctional monomer are further stirred for 2 to 3 hours. The negative photosensitive resin composition was obtained by the obtained solution. A method of forming a cured film using the negative photosensitive resin composition of the present invention will be described by way of example. The present invention is coated with a 'negative type of light-weight resin composition by a known method such as micro gravure printing, spin coating, dip coating, curtain coating, coating, spraying, slit coating, and the like. On the base substrate, the device is prebaked by a heating plate, a supply box, or the like. The prebaking is carried out in the range of 5 Å and 2 Torr for 3 G seconds to 3 Torr minutes, and the film thickness after prebaking is 29 201142506, preferably 〇·1 μηη or more and 15 μηη or less. After pre-baking, 'using a stepper, a specular projection reticle to align the exposure machine (ΜΡΑ), a parallel light ray aligning machine (hereinafter referred to as PLA), etc. Dielectric ~ 4,000 J / m2 (wavelength 365 nm exposure cover. The source of exposure is not limited, you can use i-ray, g-ray, 11-ray UV or KrF (wavelength 248 nm) laser, ArF (wavelength is 193.) Laser or the like. Thereafter, the film may be subjected to post-exposure baking, that is, heating in a heating device such as a hot plate or an oven at a temperature of 150 Å or more and 45 (the range below rc is heated for about 1 hour). The negative photosensitive resin composition of the present invention preferably has a sensitivity of 100 j/m 2 or more and 〇〇〇j/m 2 or less under exposure by PLA. The pattern is exposed by PLA. The sensitivity can be obtained, for example, by the following method: spin-coating the composition at a random number of revolutions on a Shi Xi wafer, using a hot plate at 12 Torr, and pre-baking for 2 minutes. A film with a film thickness of 2 μm was produced. PLA (Manufactured by Canon Inc., PLA-501F ( (product name) ") "Using an ultra-high pressure mercury lamp to expose the produced crucible by a gray scale mask for sensitivity measurement, and then using an automatic developing device (AD-2000 (trade name) manufactured by TAKIZAWA CO., LTD.) </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; The exposure amount of the line and the gap pattern is obtained as the sensitivity. After the patterning exposure, the exposed portion is dissolved by development, and the pattern of 201142506--'-r-negative pattern is obtained. The development method is developed by a method. W straw is an electrophotographic developer such as stealing, _, liquid coating, etc.; = 2 0; clock. The developer can use a known acid salt, a dish acid containing a metal hydroxide, carbon ethanol, single B; face Inorganic test of salt, salt, etc. -2-diethylamine test, etc., four-stage money = equal amines, 'tetramethyl-nitrogen oxide record, better aqueous solution of gallbladder, etc. After development, the r囹 meat bin The water is rinsed, and then the wire can be baked at a temperature below 5 ° C and below 150 ° C. Thereafter , in the ucrc above 28 (r rc below the range of ^ and other thermal hardening, to obtain a cured film. η from the t-type negative photosensitive resin composition obtained by the cured film is better ^ is the atomic content For reading of wt% or more and 75 wt% or less, carbon atom content of 25 趟 or more and 8 〇 wt% or less, and Shih's atomic content of 〇$ or more and O wt/o or less. By making it into the above range, it is well balanced. The degree of resolution of the transmittance, the hardness, and the resistance to the dyeing n is preferably 2 or less. The film thickness of the cured film is not particularly limited, and is preferably 〇1 μm or more and 15 μm or less. Further, it is preferable that the film thickness 丨 5 μηη has a hardness of 4 η or more and a transmittance of 90% or more. In addition, the transmittance refers to the transmittance at a wavelength of 4 〇〇 nm. The hardness or transmittance can be adjusted by selecting the exposure amount and the heat hardening temperature. The cured film obtained by curing the negative photosensitive resin composition of the present invention can be used for various protections such as a protective film for a touch panel, various hard coating materials, a planarizing film for a TFT, a protective layer for a color filter, and an antireflection film. Film, optical light guide, insulating film for touch sensor, insulating film for TFT, and color extinguishing 201142506. In these cases, "there is a high hardness and a consideration of m", which is suitable for use as a protective film for a touch panel. The touch surface i or the like, the optical type, the electromagnetic type, and the static capacitance = too 2 valley type touch panel require a particularly high hardness, and thus the cured film of the present invention can be suitably used. The hardened f obtained by curing the negative photosensitive resin composition of the invention has high heat and humidity resistance, so that the light (four) metal wiring protective film can be used for lifting on the metal wiring to prevent the corrosion of the metal. And ^« is deteriorated (conductivity is lowered, etc.). The metal to be protected is not particularly limited, and examples thereof include copper, silver m, titanium, iota, IZ〇 (indium zinc oxide), AZO (added with the oxidation of the name), and Zn〇2. In particular, it can be suitably used in a touch panel member to be contained. Here, the term "touch surface" means a glass film substrate including an electrode and an insulating film and/or a protective film, and can be used as a member of a sensor substrate for a touch panel. The method of manufacturing the touch panel member is not particularly limited, and for example, the method described below can be cited. Forming a transparent electrode film on a glass substrate at an arbitrary film thickness, patterning the photoresist material by photolithography, performing chemical etching of the transparent electrode using an etching solution, and performing a protective layer peeling step using a stripping solution A glass substrate (Fig. - a) for patterning a transparent electrode forming part of the X-axis electrode and the γ-axis electrode was produced. A metal oxide such as IT〇, IZ0, AZ〇, Zn〇2, or tin-recording acid or a thin film of a metal such as gold, silver, copper or aluminum is formed on the transparent electrode. These transparent conductive electrodes can be formed by a physical method such as vacuum evaporation, sputtering, ion plating, ion beam evaporation, or a chemical vapor deposition method, which has been carried out since the previous method 32 201142506. Then, a cured film obtained from the negative photosensitive resin composition of the present invention is formed as a transparent insulating film at a portion intersecting the electrode formed later (Fig. 1-b). Thereafter, an electrode thin film is formed with an arbitrary film thickness, and a wiring connected to the IC drive and a Y-axis electrode conductive wiring (Fig. 1_c) are formed by a step of photoresist pattern processing, etching, and photoresist stripping. As the electrode here, in addition to the transparent electrode material, indium, bismuth/molybdenum/molybdenum laminated film (MAM), key-sharp alloy, chromium, titanium, titanium/inscription/titanium laminated film (TAT), Aluminum and so on. Finally, a transparent protective film is formed by using a cured film obtained from the negative photosensitive resin composition of the present invention at a portion other than the portion where the 1C is driven to be connected to the end portion of the substrate (the upper left side and the lower right portion of the drawing). Control panel components. Fig. 2 is a cross-sectional view showing a fabrication example of the touch panel member. [Examples] Hereinafter, the present invention will be described using this example, but the aspect of the invention is not limited to the examples. (Synthesis Example 1: Synthesis of Polyoxane Solution (i)) A 500 mL three-necked flask was charged with methyltrimethoxyoxane 47 67 g (0.35 mol) and phenyltrimethyldecyldecane 39 66 g ( 〇2〇1), 3-trimethoxy sulfonylpropyl succinic acid 26.23 g (0.10 mol), γ-acryloyl propyl tridecyloxy decane 82.04 g (〇·35 mol), diacetone Alcohol (hereinafter referred to as DAA) 185.08 g, immersed in an oil bath of 4 〇〇c while stirring. Adding 0.39 g of phosphoric acid to 55.8 g of water by a dropping funnel in 10 minutes (relative to the monomer charged) In the case of 〇 2 wt%) aqueous phosphoric acid. After stirring at 40 ° C for 1 hour, the oil bath temperature was set to 7 (rc and stirred 1 33 201142506). The oil bath was heated to U5 ° C in 3G minutes. After the temperature rise = time, within the solution The temperature reaches the trace C, and then the temperature is _~110. 〇. The total amount of steam is distilled out in the reaction. · It is the work of (4) and water. The DAA dissolved in the obtained poly-salt = the degree of polymerization becomes * The wt% square green plus daa is used to obtain the poly-stone solution (1). In addition, the polymer obtained by Gpc _ weight average molecular weight (MW) is 8, _ (polystyrene conversion). The acid-equivalent equivalent was 620 g/m〇l. (Synthesis Example 2: Synthesis of polyoxane solution (ii)) A three-necked flask was charged with methyltrimethoxy-Wei 54 48 g__(m〇1), benzene. Tris-methoxy oxalate 39.66 g (〇.20 m〇1), 3-dimethoxyweipropylpropyl benzoate 13 12 g ( 〇〇5 _), brewed, propyl tridecyloxy Wei 82.04 g ( 〇·35 mGl), DAA 174 -, = oil slanted to the surface of the 4G °C slant-face county - surface by drop (four) bucket with 1 〇 is known to be added in water 54·9 g towel dissolved with phosphoric acid Q still g (0.2 wt% relative to the monomer charged) aqueous phosphoric acid. Secondly, Heating under the conditions of the synthesis example i: and steaming out the total methanol and water of the n-product. In the case of the DAA solution, the material is subjected to a 4% wt% a surface plus a DAA. (4) Oxygen-sintering solution (nj. In addition, the weight average molecular weight (Mw) of the polymer obtained by GPC_ was found to be 6, _ (polystyrene), and the acid equivalent was 1,190 g/mol. Synthesis Example 3: Synthesis of Polyoxane Solution (Extracted) A 500 mL three-necked flask was charged with methyltrimethoxyoxane 27 &amp; 34 201142506 g (0.20 mol), phenyltrimethoxydecane 39.66 g ( 0.20 mol), 3-dimethoxy group, propyl ketone acid 65.58 g (0.25 mol), γ-propyl propyl propyl tridecyloxy decane 82.04 g (0.35 mol), DAA 198.02 g, dip The crucate was dissolved in 58.5 g of water by a dropping funnel while stirring in an oil bath of 40 ° C, 416 g (0, 2 wt% relative to the monomer charged) The aqueous phosphoric acid solution was heated and stirred under the same conditions as in Synthesis Example i, and a total of 13 〇g of a sterol and water as a by-product was distilled off. The DAA of the obtained polyoxyalkylene oxide was obtained. In the solution, DAA was added to obtain a polyaluminoxane solution (iii) so that the polymer concentration became 40% by weight. Further, the weight average molecular weight (Mw) of the obtained polymer was measured by GPC, and as a result, it was 7. 〇〇 (poly stupid ethylene conversion). Moreover, the carboxylic acid equivalent was 280 g/mol. (Synthesis Example 4: Synthesis of poly-stone-oxygen-burning solution (iv)) In a 500-mL three-necked flask, methyltrimethoxy-shixiyuan was charged with $8 (〇.2〇111〇1), and phenyl three.曱 石 石 39 39 66 § 〇 〇 〇 〇 66 66 66 66 66 66 66 66 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 35 M〇1), DAA 182 4 ° ° C in the oil bath - face win - face by the dropping funnel with iq = add 54.0g of water dissolved in Wei 〇 395 g (relative to 褒 and 〇 〇. 2 wt%) of a mixed aqueous solution. Next, in the same way as the synthetic m: the addition of dirty 'steaming' to take a total of 12 〇 g as a by-product =:, water. DAA was added in such a manner that the obtained DAA solution of the polyoxo-oxygenated gas was 40 wt%, and the concentration was concentrated (iv). In addition, Sa by GPC, and the Japanese 丨 又 又 & amp amp amp amp amp amp amp amp 石 石 石 另外 另外 另外 另外 另外 另外 另外 另外 另外 2011 2011 2011 2011 2011 2011 2011 2011 Further, the molecular weight (Mw) of the defect was 8, and the acid equivalent of 〇〇〇 (polystyrene) was 640 g/mol. (Synthesis Example 5. Synthesis of t-oxygen-burning solution (v)) A 500 mL three-necked flask was charged with methyltrimethoxy-wei 681 g (0.50 m〇l), and phenyltri-feta 15 g (〇% 〇(4),&gt; fluorenyl-3·methoxybutanol (hereinafter referred to as MMB) 143 37 g, reed by the bath surface while stirring with a dropping funnel for 10 minutes: added to water 54.0 g is dissolved in 167 g of phosphoric acid aqueous solution (0.1 wt% with respect to the monomer charged), and then heated and decomposed in the same manner as in the synthesis example, and 12 G g is added as a by-product. Methanol and water were added to the obtained MMB solution of polyweiwei, and MMB was added so that the polymer concentration became 40 wt% to obtain a polyoxyl&amp; solution (V). Further, the obtained polymer was measured by GPC. The weight average molecular weight (Mw) was 8,000 (in terms of polystyrene), and the carboxy group: equivalent weight was 0 g/mol. The synthesis example 5 is the aspect described in the patent document! (Synthesis Example: Acrylic resin) Synthesis of Solution (a)) ~7 In a 50〇1^ flask, 2,2,-azobis(isobutyronitrile)3L, propylene glycol methyl ether acetate (hereinafter referred to as PGMEA) was added. g. Thereafter, incorporation of 2,0 g of methyl acrylate, 315 g of benzyl methacrylate, tricyclohexyl methacrylate [5.2.1. 〇 2'6] 癸 I I vinegar 32 8 g After fully dissipating at room temperature, the flask was thoroughly purged with nitrogen by bubbling, and then heated at 7 〇t for 5 hours. Secondly, methyl (tetra) acid glycidyl ester was added to the obtained towel. 12.7 g, dimercaptobenzylamine ig, p-methoxyphenol oxime PGMEA 100 g, heated under armpit for 4 hours to obtain C 36 201142506 olefinic acid resin solution (a). The solid concentration was 40 wt. The method of 〇/〇 is applied to the obtained propylene-lipid solution (4) towel to add npGMEA. The average molecular weight of the acrylic resin is 18 qing, and the acid equivalent weight is 56 () g/m 〇 (Synthetic Example 7. Acrylic resin solution (b) (Synthesis)) In a 500 ml flask, 2,2,-dioxane (isobutyl) PGMEA (propylene glycol oxime ether acetate) 5 〇g was charged. Thereafter, 16.8 g of citric acid and methyl group were charged. Acrylic acid, 34 4 g, methacrylic acid tris [5.2 丄 0 ' ] 癸 each base from the purpose of 36 · 9 g 'full interference at room temperature = bubble after the flask is fully replaced with nitrogen, at 7 Under the armpit, carry out 5 small heat mixing. Secondly, add methyl (10) acid glycosaminoglycol, diester 11.9g, dimercaptoylamine lg, p-methoxybenzene 〇 2^? / 100 g, heating was carried out for 4 hours at TC (4) to obtain a fat solution (b). PGMEA was added to the sassafras acid resin solution (b) in such a manner that the solid content became 4% by weight. The acrylic resin had a uniform molecular weight of 13,000 'carboxylic acid equivalent of 89 〇g/mol.曰里平 (Synthesis Example 8: Synthesis of Acrylic Resin Solution (c)) A 500 ml flask was charged with 2,2,-azobis(isobutyl hydrazine PGMEA 50 g. Thereafter, thioglycol 33 9 g was charged. Month g, benzyl ester 34.4 g, trimethyl methacrylate [5.2.1.02,6] decane 8 ^, enoic acid g, stirred well at room temperature, after the flask was fully 36·9 by foaming, Heat and stir for 5 hours at 7 (TC). Secondly, add glycidyl methacrylate 14·〇g, dimethoate 1 ^g, p-methoxyphenol 0.2 g, PGMEA. 100 g, heating and stirring at 9 〇 &amp; arylamine for 1 hour to obtain an acrylic resin solution (c). Add 4 to the obtained acrylic resin solution (4) from the solid concentration 37 201142506 to 40 wt%. PGMEA. The weight average molecular weight of the acrylic tree is 24, _, and the decanoic acid equivalent is 340 g/mol. (Synthesis Example 9. Synthesis of Acrylic Resin Solution (d)) In a 5 〇〇 ml flask, 2 is charged. 2,-azobis(isobutyronitrile) 3 g, P(10)EA 50 g. Thereafter, 8 24 g of methacrylic acid, 35.58 of benzyl mercapto acrylate, tricyclomethacrylate [52 1〇2,6]decane-8-yl ester 455 g' was stirred well at room temperature, and the flask was thoroughly purged with nitrogen by foaming, and then mixed at 7 ° C for 5 hours. To the obtained solution, thioglycolic acid glycidol vinegar g, dimethyl benzylamine 1 g to decyloxy group 0.2 g, PGMEA 100 g, and heating and stirring at 9 ° C for 4 hours were added. The acrylic resin solution (d) was obtained, and PGMEA was added to the obtained acrylic resin solution (d) 7 in such a manner that the solid content became 40 wt%. The weight average molecular weight of the acrylic resin was 9, hydrazine, and the carboxylic acid equivalent was 4,600. g/mol. (Synthesis Example 10: Synthesis of Acrylic Resin Solution (e)) In a flask of 5 〇 0 ml, 2 g of 2,2,-azobis(isobutyronitrile) and 50 g of PGMEA were charged. 69 5 g of methacrylic acid and 7.9 g of a nail were added, and 9.9 was thoroughly stirred at room temperature, and the flask was sufficiently purged with nitrogen by bubbling, and then heated and stirred at 7 ° C for 5 hours. To the solution, 12.8 g of glycidyl methacrylate, ig of dimethyl hydrazide, 0.2 g of p-methoxyphenol, 100 g of PGMEA, and 9 (TC) were added. The heating and stirring were carried out for 4 hours to obtain an acrylic resin solution (e). PGMEA was added to the obtained acrylic resin solution (e) in such a manner that the solid content concentration 38 201142506 was 40 wt%. The weight average molecular weight of the acrylic resin was 40,000. The carboxylic acid equivalent was 140 g/mol. The compositions of Synthesis Examples 1 to 9 are collectively shown in Table 1. 39 201142506 七^06卜 £ [Id monomer composition (mol%) phenyl trimethoxy decane (20) phenyl trimethoxy decane (20) phenyl tridecyloxy cumane (20) phenyl trimethoxy Decane (20) phenyltrimethoxydecane (50) tricyclo[5.0.1.02,6]decane-8-yl ester (25) methacrylic acid tricyclic [5.2.1.02,6]癸炫- 8-Base Ester (30) Tricyclo [5.0.1.02,6]decane-8-yl methacrylate (20) Tricyclo[5.1.0.02,6]oxacin-8-yl ester (41 Trimethyl cyanoacrylate [5.2.1.02,6]decane-8-yl ester (5) methyltrimethoxy oxacyclohexane (35) methyltrimethoxy oxetane (40) methyltrimethoxylate Cyclohexane (20) methyltrimethoxy decane (25) methyltrimethoxy oxalate (50) benzyl methacrylate (30) benzyl methacrylate (35) benzyl methacrylate (20) 曱Benzyl acrylate (40) benzyl methacrylate (5: γ-acryloyl propyl trimethoxy oxalate (35) γ-propylene propyl propyl trimethoxy oxalate (35) γ-acryl hydrazine Propyltrimethoxysulfane (35) γ-acrylamidopropyltrimethoxy oxalate (35) armored Φ1 塄Jc if Β- 塄f C B- 塄td 塄ίί ¢- 3-trimethoxy oxalate propyl succinic acid (10) 3-trimethoxy hydroxyalkyl succinic acid (5) 3-trimethoxy decane Propyl succinic acid (25) 4-trimethoxy oxacyclobutanoic acid (20) methacrylic acid (30) methacrylic acid (20) methacrylic acid (45) methacrylic acid (4) methacrylic acid (80 Polyoxymethane solution (i) Polyoxane solution (5) Polyoxane solution (iii) Polyoxane solution (iv) Polyoxane solution (V) Acrylic resin solution (a) Acrylic resin solution (8) Acrylic acid Resin solution (C) Acrylic resin solution (4) Propionate resin solution (e) Synthesis Example 1 Synthesis Example 2 Synthesis Example 3 Synthesis Example 4 Synthesis Example 5 Synthesis Example 6 Synthesis Example 7 Synthesis Example 8 Synthesis Example 9 Synthesis Example 10 201142506 The evaluation methods in the examples and the comparative examples are as follows. (1) The transmittance was measured by using a rotary coater ("1H-360S (trade name)" manufactured by Mikasa Corporation) at 500 rpm for 1 sec. , 〇〇〇 rpm rotation for 4 seconds to spin the prepared negative photosensitive resin composition to 5 cm After using the hot plate ("SCW-636 (trade name)" manufactured by Dainippon Screen Mfg. Co., Ltd.), the square of the Tempax glass substrate (made by Asahi Yuki / Iri, manufactured by Tosoh Co., Ltd.) Prebaking at 90 ° C for 2 minutes to form a film having a film thickness of 2 μm. Using a parallel light ray aligning exposure machine (hereinafter referred to as PLA) (manufactured by Canon Inc., rPLA_5〇1F (trade name))) 'Using an ultra-high pressure mercury lamp as a light source to expose the film produced' using an oven (ESPECCORP The manufactured "IHPS-222" was cured in air at 230 C for 1 hour to prepare a cured film having a film thickness of 15 μm. For the obtained cured film, a transmittance of 400 nm was measured using an ultraviolet-visible spectrophotometer "UV-260 (trade name)" (manufactured by Shimadzu Corporation). Also' use Dainipp〇n Mfg

Co.,Ltd.製造之「Lambda ACE STM-602 (商品名)」於折 射率1.55下測定膜厚。以下所記載之膜厚亦同樣。 (2) 硬度之測定 對藉由上述(1)所記載之方法而所得之膜厚為15卿 之硬化膜’以JIS K 5600-5-4(1999)為基準而測定船筆硬 度。 (3) 财濕熱性 於具有織鑛膜之玻璃上,以上述⑴所記載之方法 201142506 而製作硬化膜後’進行於氣溫85°C、濕度85%之烘箱 (ESPEC股份有限公司、「EX-111 (商品名内放置3〇〇 小時之試驗後’評價鉬之變色程度。而且,亦同時對僅僅 鉬濺鍍膜之玻璃基板進行試驗,作為試驗前後之變色程度 之指標,以如下方式進行判定。 5 :於試驗前後,未發現於硬化膜下之鉬變色。 4:於試驗前後,硬化膜下之鉬與未覆蓋硬化膜之鉬相 比而言,有1成左右變色。 3 :於試驗前後’硬化膜下之鉬與未覆蓋硬化膜之鉬相 比而言,有2成左右變色。 2 :於試驗前後,硬化膜下之鉬與未覆蓋硬化膜之鉬相 比而言,有4成左右變色。 1 :於試驗前後’硬化膜下之鉬與未覆蓋硬化膜之鉬相 比而言,有6成左右以上變色。 (4)圖案加工性 (4-1)感光度 使用旋轉式塗佈機(Mikasa corporation製造之 「1H-360S (商品名)」)以500 rpm旋轉1〇秒後、以1,〇〇〇 rpm旋轉4秒而將負型感光性樹脂組成物A旋塗於石夕晶圓 上之後,使用加熱板(Dainippon Screen Mfg. Co.,Ltd.製造 之「SCW-636 (商品名)」)於90°C下預烘烤2分鐘,製作 膜厚2 μιη之預烘烤膜。使用PLA,以超高壓水銀燈為光 源,介隔感光度測定用灰階光罩而以100 μιη之間隙對所 得之預烘烤膜進行曝光。其後,使用自動顯影裝置 42 201142506 (「AD-2000 (商品名)」、TAKIZAWA c〇 LTD 製造),以 氛氧化四曱基銨(以下稱為TMAH)之〇 4 wt%(或者2.38 wt%)水溶液進行90秒之噴淋顯影,其次於水中沖洗3〇 秒。 於曝光、顯影後,將以1比1之寬度形成為30 μηι之 線與間隙11案祕光量(以下將其稱為最佳曝光量)作為 感光度。以I光線照度計測定曝光量。 (4-2)解像度 測定最佳曝衫之顯影後的最小圖案尺寸。 (4-3)顯影後殘留 藉由上述(4-1)所記載之方法於石夕晶 圓上進行圖案加 工後,根據未曝光部之溶解殘留程度而以如下方式進行判 定0 、5於目視下無4解殘留’於顯微鏡之觀察下,於%师 以下之微細圖案中亦無殘造。 二目ΐ見:f ’奋解殘留,於顯微鏡觀察下,於5〇μιη 以上之η逢,但於50_下之圖 以上3之===解殘留’值於顯微鏡觀察下,於50卿 以上之圖案中存在殘 &gt;查。 於目視下’於基板端部(厚 (實例υ 、先4整體中存在溶解殘留。 於黃色燈下,使1,2-辛-航,^ 疏笨基硫基)-2-(0-苯曱 醯躬〇] (「Irgacure OXE-Ol r 永 „ A、 、两。°名)」汽巴精化股份有限 43 201142506 公司製造)0.277 g 溶解於 DAA 2.846 g、PGMEA 2.317 g 中,添加二正丁氧基雙(乙醯乙酸乙醋)鍅(7〇 wt% 丁醇 &gt;谷液)(「ORGATIX ZC-580 (商品名)」、Matsumoto FineThe "Lambda ACE STM-602 (trade name)" manufactured by Co., Ltd. was measured at a refractive index of 1.55. The film thickness described below is also the same. (2) Measurement of hardness The hardness of the ship was measured on the basis of JIS K 5600-5-4 (1999) based on the cured film having a film thickness of 15 Å obtained by the method described in the above (1). (3) The heat and humidity are on the glass with the tunicate film, and after the cured film is produced by the method 201142506 described in the above (1), the oven is placed at an air temperature of 85 ° C and a humidity of 85% (ESPEC Co., Ltd., "EX- 111 (After the test in which the product name was placed for 3 hours, the degree of discoloration of molybdenum was evaluated. Further, the glass substrate of the molybdenum sputter only film was tested at the same time, and the degree of discoloration before and after the test was determined as follows. 5: Before and after the test, no discoloration of molybdenum under the cured film was found. 4: Before and after the test, the molybdenum under the hardened film was about 10% discolored compared with the molybdenum without the cured film. 3 : Before and after the test 'The molybdenum under the hardened film is about 20% discolored compared with the molybdenum which is not covered with the cured film. 2: Before and after the test, the molybdenum under the hardened film is 40% compared with the uncovered hardened molybdenum. Left and right discoloration 1 : Before and after the test, the molybdenum under the hardened film has a discoloration of about 60% or more compared with the molybdenum which is not covered with the cured film. (4) Pattern processing property (4-1) Sensitivity using a rotary coating Cloth machine (1H-360 by Mikasa Corporation) S (trade name)") was rotated at 500 rpm for 1 second, and then rotated at 1, rpm for 4 seconds to spin-coat the negative photosensitive resin composition A on the Shihwa wafer, and then use a hot plate ( "SCW-636 (trade name)" manufactured by Dainippon Screen Mfg. Co., Ltd. was prebaked at 90 ° C for 2 minutes to prepare a prebaked film having a film thickness of 2 μm. Using PLA, an ultrahigh pressure mercury lamp For the light source, the obtained pre-baked film was exposed with a gap of 100 μm through a gray scale mask for sensitivity measurement. Thereafter, an automatic developing device 42 201142506 ("AD-2000 (trade name)", TAKIZAWA was used. (manufactured by c〇LTD), sprayed with a 4 wt% (or 2.38 wt%) aqueous solution of tetramethylammonium (hereinafter referred to as TMAH) for 90 seconds, followed by rinsing for 3 seconds in water. After development, a line of 30 μm is formed with a width of 1 to 1 and a light amount of the gap 11 (hereinafter referred to as an optimum exposure amount) is used as the sensitivity. The exposure amount is measured by an I illuminance meter. Resolution determines the minimum pattern size after development of the best exposure shirt. (4-3) Residue after development by the above (4-1) The method described in the method is performed on the Shiyue wafer, and the degree of dissolution of the unexposed portion is determined as follows: 0 and 5 are visually observed without residual solution. There is no residue in the fine pattern below the % division. The two eyes see: f 'exciting residue, under the microscope observation, above the 5〇μιη, but above the 50_= The value of ==resolved residue was observed under microscope observation, and there was a residue in the pattern of 50 qing or more. Under the visual view, 'at the end of the substrate (thickness (example υ, first 4, there is dissolved residue in the whole. Under the yellow light, make 1,2-Xin-Hang, ^ succinylthio)-2-(0-benzene曱醯躬〇] ("Irgacure OXE-Ol r Yong „ A, 、, two. °Name)” Ciba Specialty Chemicals Co., Ltd. 43 201142506 Manufactured by the company 0.277 g Dissolved in DAA 2.846 g, PGMEA 2.317 g, add two positive Butoxy bis(ethyl acetonitrile acetate) hydrazine (7 〇 wt% butanol &gt; gluten) ("ORGATIX ZC-580 (trade name)", Matsumoto Fine

Chemical Co丄td_製造)0.227 g、作為聚矽氧系界面活性劑 之「BYK-333 (商品名)」(ByK_chemie JApAN 〖叉製 造)之PGMEA 1 wt%溶液0.2000 g (相當於濃度為1〇〇 口?111)、4-第三丁基鄰苯二酚之1)(}]^£八1以%溶液1661 g,進行攪拌。於其中添加二季戊四醇六丙烯酸酯 (「‘‘KAYARAD (註冊商標),,DpHA (商品名)」、新曰本 化藥製造)之PGMEA 50 wt%溶液5.538 g、聚石夕氧烧溶液 (1) 6.9^ g,進行攪拌。其次,以〇 45 μιη之過濾器進行 過遽’獲得負型感紐樹驗成物⑻)。關於所得之負 型感光性旨組成物(S]),藉由所述方法而評價透射率、 硬度、耐濕熱性、圖案加工性。 (實例2) 、使=聚石夕氧燒溶液(Η)代替聚石夕氧烧溶液⑴,除此Chemical Co丄td_manufactured) 0.227 g, "BYK-333 (trade name)" (ByK_chemie JApAN manufactured by Fork) PGMEA 1 wt% solution 0.2000 g (corresponding to a concentration of 1〇) Mouthwash? 111), 4-tert-butyl catechol 1) (}] £ 八 1 1% solution of 1671 g, stirring, adding dipentaerythritol hexaacrylate ("''KAYARAD (registered (trademark),, DpHA (trade name), manufactured by Shinjuku Chemical Co., Ltd.) PGMEA 50 wt% solution 5.538 g, poly-stone oxygen-burning solution (1) 6.9 ^ g, stirring. Secondly, 〇45 μιη The filter was subjected to 遽' to obtain a negative-type new-tree test (8). With respect to the obtained negative photosensitive composition (S)), transmittance, hardness, moist heat resistance, and pattern processability were evaluated by the above method. (Example 2), = = Ju Shi Xi oxygen burning solution (Η) instead of poly day oxygen burning solution (1), in addition to this

實例1同樣地進行,獲得負型感光性樹脂組成物 使用所得之負型感光性 例1同樣地進行評價。BExample 1 was carried out in the same manner, and a negative photosensitive resin composition was obtained and evaluated in the same manner as in the negative photosensitive property obtained in Example 1. B

,w貝其中’顯影液使用2.38 wt% TMAH (實例3) 此以Si二乳烷溶液⑽)代替聚矽氧烷溶液⑴,除 1樣地進行’獲得負型感光性細旨組成物 所仵之負型感光性樹脂組成物(S-3),與實 201142506 ^ ^ ^ ^ ^ a. 例1同樣地進行評價。 (實例4) 使用聚矽氧烷溶液(iv)代替聚矽氧烷溶液(i),除 此以外與實例1同樣地進行,獲得負型感光性樹脂組成物 (S-4)。使用所得之負型感光性樹脂組成物(s_4),與實 例1同樣地進行評價。 (實例5) 於黃色燈下’添加2-甲基-[4-(曱基硫基)苯基]-2-N-嗎 啉基丙烷-1-酮(「Irgacure9〇7 (商品名)」汽巴精化股份有 限公司製造)0,503 g、4,4-雙(二乙基胺基)二苯甲酮 (「EAB-F(商品名)」保土谷化學工業股份有限公司製造) 0.026 g、DAA 3.030 g、PGMEA 2.515 g、「ZC-580 (商品 名)」0.227 g、作為聚矽氧系界面活性劑之BYK-333( 1 wt% PGMEA溶液)〇.2000g (相當於濃度為l〇〇ppm)、4-第三 丁基鄰苯二酚(1 wt%PGMEA溶液)1.588 g而進行擾拌。 於其中添加「DPHA」(50 wt% PGMEA溶液)5.294 g、聚 石夕氧烧溶液(i) 6.617 g而進行擾拌。其次,以0.45 μιη之 過濾器進行過濾,獲得負型感光性樹脂組成物(S-5)。使 用所得之負型感光性樹脂組成物(S_5),與實例1同樣地 進行評價。 7 (實例6) 使用乙酮,1-[9-乙基-6_(2-甲基苯曱醯基)·9Η“卡唾_3-基]-,Η〇-乙醯基聘)(「Irgacure ΟΧΕ-02 (商品名)」汽巴精 化股份有限公司製造)代替Irgacure OXE-01,除此以外與 45 201142506 實例1同樣地進行’獲得負型感光性樹脂組成物(s_6)。 使用所得之負型感光性樹脂組成物(S-6),與實例1同樣 地進行評價。 (實例7) 使用三季戊四醇八丙稀酸酯(「V# 802 (商品名)」、 大阪有機化學股份有限公司製造)代替「DPHA (商品 名)」’除此以外與實例1同樣地進行,獲得負型感光性樹 脂組成物(S-7)。使用所得之負型感光性樹脂組成物 (S-7) ’與實例1同樣地進行評價。 (實例8) 使用「V#802 (商品名)」(50%PGMEA溶液)3.323 g與9,9~雙[4_(2_丙烯醯氧基乙氧基)苯基]g (「BPEFA (商 品名)」、Osaka Gas Chemicals 製造)(50 wt% PGMEA 溶 液)2.215 g代替「DPHA (商品名)」,除此以外與實例1 同樣地進行,獲得負型感光性樹脂組成物(s_8&gt;使用所 得之負型感光性樹脂組成物(S-8) ’與實例1同樣地進行 評價。 (實例9) 於黃色燈下,添加「〇XE-01(商品名)」〇.277 g、DAA 2_846 g、PGMEA2.016 g、「NanoUse OZ-30M (商品名)」 (曱醇溶液' 固形物= 30.9 wt%) 0.538 g、作為聚石夕氧系 界面活性劑之BYK-333( 1 wt% PGMEA溶液)0·2〇00 g(相 當於濃度為100 ppm )、4-第三丁基鄰苯二酚〇 wt% PGMEA溶液)1.661 g而進行攪拌。添加rDPHA (商品 46 201142506 名)」(50% PGMEA溶液)5.538 g、聚矽氧烷溶液(i)6.923 g而進行擾拌。其次,以0.45 μιη之過濾器進行過濾,獲 得負型感光性樹脂組成物(S-9)。使用所得之負型感光性 樹脂組成物(S-9),與實例1同樣地進行評價。 (實例10) 於黃色燈下,添加「ΟΧΕ-01 (商品名)」0.239 g、DAA 3.410 g、PGMEA0.846 g、「NanoUse OZ-30M (商品名)」 (曱醇溶液、固形物= 30.9 wt〇/0) 3.098 g、作為聚矽氧系 界面活性劑之BYK-333( 1 wt% PGMEA溶液)0.2000 g(相 當於濃度為100 ppm )、4-第三丁基鄰苯二酚(1 wt〇/0 PGMEA溶液)1.436 g而進行攪拌。添加「DPHA (商品 名)」(5〇%PGMEA溶液)4.787 g、聚矽氧烷溶液(i)5.984 g而進行攪拌。其次,以〇·45 μπι之過濾器進行過濾,獲 得負型感光性樹脂組成物(S-i〇)。使用所得之負型感光性 樹脂組成物(S_10),與實例丨同樣地進行評價。 (實例11) 使用「BAILAR Zr-C2〇 (商品名)」(甲醇溶液、固形 物= 20wt%) 〇.831g 代替「NanoUse〇Z-30M (商品名)」 0/38 g,除此以外與實例9同樣地進行,獲得負型感光性 樹脂組成物(S-11)。使用所得之負型感光性樹脂組成物 (S-11),與實例1同樣地進行評價。 (實例12) 於頁色燈下,添加「OXE-01 (商品名)」〇.277 g、DAA 1846 g、PGMEA 2·388 g、四乙醯丙酮锆(「Nacem 201142506In the case where the developing solution was used, 2.38 wt% TMAH (Example 3), the Si dilactane solution (10) was used instead of the polyoxyalkylene solution (1), and the negative photosensitive composition was obtained in addition to the sample. The negative photosensitive resin composition (S-3) was evaluated in the same manner as in Example 1 of 201142506 ^ ^ ^ ^ a. (Example 4) A negative photosensitive resin composition (S-4) was obtained in the same manner as in Example 1 except that the polyoxane solution (iv) was used instead of the polyoxyalkylene solution (i). The negative photosensitive resin composition (s_4) obtained was used for evaluation in the same manner as in Example 1. (Example 5) Add 2-methyl-[4-(decylthio)phenyl]-2-N-morpholinylpropan-1-one under "yellow lamp" ("Irgacure 9〇7 (trade name)" Manufactured by Ciba Specialty Chemicals Co., Ltd., 0,503 g, 4,4-bis(diethylamino)benzophenone ("EAB-F (trade name)" manufactured by Hodogaya Chemical Industry Co., Ltd.) 0.026 g, DAA 3.030 g, PGMEA 2.515 g, "ZC-580 (trade name)" 0.227 g, BYK-333 (1 wt% PGMEA solution) 矽.2000g as a polyfluorene-based surfactant (equivalent to a concentration of l〇〇) Puncture was carried out at a concentration of 1.588 g of 4-butylbutyl catechol (1 wt% PGMEA solution). The mixture was mixed with "DPHA" (50 wt% PGMEA solution) 5.294 g and polysulfate oxygen solution (i) 6.617 g. Next, filtration was carried out with a filter of 0.45 μm to obtain a negative photosensitive resin composition (S-5). The negative photosensitive resin composition (S_5) thus obtained was used in the same manner as in Example 1. 7 (Example 6) Using ethyl ketone, 1-[9-ethyl-6_(2-methylphenylhydrazinyl)·9Η “卡唾_3-基]-,Η〇-乙醯基) ( In the same manner as in Example 1 of 45 201142506, the negative photosensitive resin composition (s_6) was obtained in the same manner as in the example of 45 201142506 except for the Irgacure ΟΧΕ-02 (trade name), which was manufactured by Ciba Specialty Chemicals Co., Ltd. The negative photosensitive resin composition (S-6) thus obtained was used for evaluation in the same manner as in Example 1. (Example 7) The same procedure as in Example 1 was carried out except that tripentaerythritol octaacrylate ("V# 802 (trade name)", manufactured by Osaka Organic Chemical Co., Ltd.) was used instead of "DPHA (trade name)". A negative photosensitive resin composition (S-7) was obtained. The negative photosensitive resin composition (S-7)' obtained was evaluated in the same manner as in Example 1. (Example 8) Using "V#802 (trade name)" (50% PGMEA solution) 3.323 g and 9,9~bis[4_(2_acryloxyethoxy)phenyl]g ("BPEFA (Commodity) In the same manner as in Example 1, except that "DPHA (trade name)" was used instead of "DPHA (trade name)", a negative photosensitive resin composition (s_8) was obtained. The negative photosensitive resin composition (S-8) was evaluated in the same manner as in Example 1. (Example 9) Under the yellow lamp, "〇XE-01 (trade name)" 〇.277 g, DAA 2_846 g was added. , PGMEA2.016 g, "NanoUse OZ-30M (trade name)" (sterol solution 'solids = 30.9 wt%) 0.538 g, BYK-333 (1 wt% PGMEA solution) as a polyoxo surfactant 0. 2 〇 00 g (corresponding to a concentration of 100 ppm) and 4-tributyl catechol 〇 wt% PGMEA solution) 1.661 g were stirred. A scramble was carried out by adding rDPHA (product 46 201142506 name) (50% PGMEA solution) 5.538 g and polyoxyalkylene solution (i) 6.923 g. Next, filtration was carried out with a filter of 0.45 μηη to obtain a negative photosensitive resin composition (S-9). The negative photosensitive resin composition (S-9) thus obtained was evaluated in the same manner as in Example 1. (Example 10) Under the yellow light, add "ΟΧΕ-01 (trade name)" 0.239 g, DAA 3.410 g, PGMEA0.846 g, "NanoUse OZ-30M (trade name)" (sterol solution, solids = 30.9 Wt〇/0) 3.098 g, BYK-333 (1 wt% PGMEA solution) 0.2000 g (corresponding to a concentration of 100 ppm), 4-tert-butyl catechol (1) The wt〇/0 PGMEA solution was stirred at 1.436 g. Stirring was carried out by adding "DPHA (trade name)" (5 % PGMEA solution) 4.787 g and polyoxyalkylene solution (i) 5.984 g. Next, filtration was carried out with a filter of 〇·45 μm to obtain a negative photosensitive resin composition (S-i〇). The negative photosensitive resin composition (S_10) thus obtained was used for evaluation in the same manner as in Example 。. (Example 11) Use "BAILAR Zr-C2〇 (trade name)" (methanol solution, solids = 20wt%) 〇.831g instead of "NanoUse〇Z-30M (trade name)" 0/38 g, in addition to Example 9 was carried out in the same manner to obtain a negative photosensitive resin composition (S-11). The negative photosensitive resin composition (S-11) thus obtained was used for evaluation in the same manner as in Example 1. (Example 12) Under the swatch light, add "OXE-01 (trade name)" 〇.277 g, DAA 1846 g, PGMEA 2·388 g, tetraacetyl acetonide zirconium ("Nacem 201142506

Zirconium (商品名)」、曰本化學產業公司製造)0166g、 作為聚矽氧系界面活性劑之BYK-333 ( 1 wt% PGMEA溶 液)0.2000 g (相當於濃度為1〇〇 ppm)、4-第三丁基鄰笨 一紛(1 wt% PGMEA溶液)1.661 g而進行授拌。添加 「DPHA (商品名)」(50 wt% PGMEA 溶液)5.538 g、聚 矽氧烷溶液(i) 6.923 g而進行攪拌。其次,以0.45 μιη之 過慮器進行過慮’獲得負型感光性樹脂組成物(S-12 )。使 用所得之負型感光性樹脂組成物(S-12),與實例1同樣地 進行評價。 (實例13) 將Nacem Zirconium之添加量設為0.017 g,除此以外 與實例12同樣地進行,獲得負型感光性樹脂組成物 (S-13)。使用所得之負型感光性樹脂組成物(s_13),與 實例1同樣地進行評價。 (實例14) 將Nacem Zirconium之添加量設為0.323 g,除此以外 與實例12同樣地進行,獲得負型感光性樹脂組成物 ^S_14)。使用所得之負型感光性樹脂組成物(s_14) ’與 貫例1同樣地進行評價。 (實例15) 使用四丙氧基錯代替Nacem Zirconium,除此以外與 實例^同樣地進行,獲得負型感光性樹脂組成物(s_13;)。 使用所得之負型感光性樹脂組成物(S-13),與實例1同樣 地進行評價。 48 201142506 (實例16) 使用四本氣基錯代替Nacem Zirconium,除此以外與 實例1同樣地進行,獲得負型感光性樹脂組成物(S· 14 )。 使用所得之負型感光性樹脂組成物(S-14),與實例1同樣 地進行評價。 (實例17) 使用四(2,2,6,6-四甲基_3,5_庚二酮基)锆代替Nacem Zirco^a ’除此以外與實例12同樣地進行,獲得負型感 光性樹脂組成物(s_15 )。使用所得之負型感光性樹脂組成 物(S-15) ’與實例丨同樣地進行評價。 (實例18) 使用四丙一酸曱g旨錯·代替Nacem Zirconium,除此以 外與實例12同樣地進行,獲得負型感紐樹脂組成物 (S-16) °使用所得之負型感光性樹脂組成物(s_i6),與 實例1同樣地進行評價。 (實例19) 使用四本曱酿丙酮結代替Nacem zirconium,除此以 外與實例12同樣地進行,獲得負型感紐樹脂組成物 (S 17)使用所得之負型感光性樹脂組成物(ϋ7),鱼 實例1同樣地進行評價。 〃 (實例20) 使用單正丁氧基乙II丙酮雙(乙醯乙酸乙酉旨)錯代替Zirconium (trade name), manufactured by Sakamoto Chemical Co., Ltd.) 0166g, BYK-333 (1 wt% PGMEA solution) 0.2000 g (corresponding to a concentration of 1〇〇ppm) as a polyoxonated surfactant, 4- The third butyl group was mixed with 1.661 g of 1 wt% PGMEA solution. Add "DPHA (trade name)" (50 wt% PGMEA solution) 5.538 g, polyoxymethane solution (i) 6.923 g and stir. Next, the negative photosensitive resin composition (S-12) was obtained by using a 0.45 μηη filter. The negative photosensitive resin composition (S-12) thus obtained was used in the same manner as in Example 1. (Example 13) A negative photosensitive resin composition (S-13) was obtained in the same manner as in Example 12 except that the amount of the Nacem Zirconium was changed to 0.017 g. The negative photosensitive resin composition (s_13) thus obtained was used for evaluation in the same manner as in Example 1. (Example 14) A negative photosensitive resin composition ^S_14) was obtained in the same manner as in Example 12 except that the amount of the Nacem Zirconium was changed to 0.323 g. The negative photosensitive resin composition (s_14)' obtained was evaluated in the same manner as in Example 1. (Example 15) A negative photosensitive resin composition (s_13;) was obtained in the same manner as in Example ^ except that a tetrapropoxy group was used instead of Nacem Zirconium. The negative photosensitive resin composition (S-13) thus obtained was used for evaluation in the same manner as in Example 1. 48 201142506 (Example 16) A negative photosensitive resin composition (S·14) was obtained in the same manner as in Example 1 except that the Nacem Zirconium was used instead of the Nacem Zirconium. The negative photosensitive resin composition (S-14) thus obtained was used for evaluation in the same manner as in Example 1. (Example 17) A negative photosensitive property was obtained in the same manner as in Example 12 except that tetrakis(2,2,6,6-tetramethyl-3,5-heptanedone)zirconium was used instead of Nacem Zirco^a'. Resin composition (s_15). The negative photosensitive resin composition (S-15)' obtained was evaluated in the same manner as in Example 。. (Example 18) A negative photosensitive resin obtained by using a negative-sensitive sensible resin composition (S-16) was obtained in the same manner as in Example 12 except that the bismuth propionate was used instead of Nacem Zirconium. The composition (s_i6) was evaluated in the same manner as in Example 1. (Example 19) A negative photosensitive resin composition obtained by using a negative-type sensible resin composition (S 17) was obtained in the same manner as in Example 12 except that four enamel acetonide were used instead of Nacem zirconium (ϋ7). Fish example 1 was evaluated in the same manner. 〃 (Example 20) using single n-butoxyethyl II acetone bis(acetonitrile acetate) instead

Nacem Zirconium,险,ι·ΐ·,、,从也也,…Α 一 “ 咏此以外與實例12同樣地進行,蒋得 負型感光性樹脂組成物⑷8)。使用所得之負型感光性樹 49 201142506 脂組:二8)’與實例1同樣地進行評價。 使用二氯雙(η5-環戊二Nacem Zirconium, risk, ι·ΐ·,,, and also from, Α “ “ “ “ 与 与 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 蒋 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 49 201142506 Lip group: 2 8) 'Evaluation in the same manner as in Example 1. Using dichlorobis(η5-cyclopentane)

Zirconium,除此以外盥實例土。替NaCem 光性樹脂組成物⑷進行’獲得負型感 物㈣),與實例型感光性樹脂組成 (實例22) 使用氫氣(η5_ 戊二_ I ^ 4 Zl_um,除此以外與實例12同樣地進行獲 : =;===型感先_組成 (實例23) 使用又(一氟曱確g夂)一茂錯四氣咬喃加成物 NaCem Zirconium ’除此以外與實例12同樣地進行= 負型感光性樹脂組成物(S-21)。使用所得 ^ 脂組成物(S-2D,與實例i同樣地進行評價、。㈣九叫 (實例24) 胃 使用丙烯酸樹脂溶液U)代替聚石夕魏溶液⑴Zirconium, in addition to the example soil. The NaCem photo-resin composition (4) was subjected to 'obtaining a negative-type sensory substance (4)), and the composition of the example-type photosensitive resin (Example 22) was carried out in the same manner as in Example 12 except that hydrogen gas (η5_penta-I^4Zl_um) was used. Obtained: =; === type sensation first _ composition (example 23) using again (monofluoro 曱 夂 夂 一 一 一 一 Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Na Photosensitive resin composition (S-21). The obtained lipid composition (S-2D was evaluated in the same manner as in Example i. (4) Nine (Example 24) The stomach was treated with an acrylic resin solution U) instead of Ju Shi Xi Wei Solution (1)

—步添加同量之PGMEA代替DAA,除此以外與 樣地進行,獲得負型感光性樹脂組成物(A 〇 J ;負型感光性樹脂組錢(A·1)’與實例;同樣地= (實例25) 使用丙烯酸樹脂溶液(b)代替聚矽氣烷溶液(^) 50 201142506 一.——f 進一步添加同量之PGMEA代替DAA,除此以外與實例2 同樣地進行’獲得負型感光性樹脂組成物(A-2)。使用所 得之負型感光性樹脂組成物(A-2),與實例1同樣地進行 評價。其中,顯影液使用2.38 wt%TMAH水溶液。 (實例26) 使用丙稀酸樹脂溶液(c)代替聚石夕氧烧溶液(出), 進一步添加同量之PGMEA代替DAA,除此以外與實例3 同樣地進行,獲得負型感光性樹脂組成物(A-3)。使用所 得之負型感光性樹脂組成物(A-3),與實例1同樣地進 評價。 丁 (實例27) 使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液(丨),進 一步添加同量之PGMEA代替DAA,除此以外與實例5同 樣地進行’獲得負型感光性樹脂組成物(A_4)。使用所得 之負型感光性樹脂組成物(A-4),與實例丨同樣地進行二 價。 (實例28) 使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液(i),進 一步添加同量之PGMEA代替DAA,除此以外與實例6同 樣地進行,獲得負型感光性樹脂組成物(A_5)。使用所得 之負型感光性樹脂組成物(A·5),與實例!同樣地進行評 價。 (實例29) 使用丙婦酸樹脂溶液(a)代替聚石夕氧燒溶液⑴,進 51 201142506 —步添加同量之PGMEA代替DAA,除此以外與實例7 樣地進行,獲得負型感光性樹脂組成物(A_6)。使用所二 =負型感光性樹脂組成物(A-6),與實例1同樣地進行坪 4只0 ~ (實例30) 〜使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液(丨),進 f步添加同量之PGMEA代替DAA,除此以外盥實例8 樣地進行,獲得負型感光性樹脂組成物(A_7)。、使用所^ =負型感光性樹脂組成物(A-7),與實例i同樣地進行評 (實例31) 使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液(i),進 〜步添加同量之PGMEA代替DAA,除此以外與實例9同 樣地進行,獲得負型感光性樹脂組成物(A_8 )。、使用所得 ^負型感光性樹脂組成物(A-8),與實例丨同樣地進行^ 價。 。 (實例32) 使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液〇),進 〜步添加同量之PGMEA代替DAA,除此以外與實例1〇 同樣地進行,獲得負型感光性樹脂組成物(A_9)。使用所 得之負型感光性樹脂組成物(A-9),與實例1同樣地 評價。 (實例33) 使用丙烯酸樹脂溶液(a)代替聚矽氧燒溶液(i),進 52 201142506 一步添加同量之PGMEA代替DAA,除此以外與實例u 同,地進行,獲得負型感光性樹脂組成物(A-ίο)。使用 所付之負型感光性樹脂組成物(A-10),與實例1同樣地 進行評價。 ’ (實例34) 使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液〇),進 —步添加同量之PGMEA代替〇ΑΑ,除此以外與實例12 同樣地進行,獲得負型感光性樹脂組成物(A-11)。使用 所得之負型感光性樹脂組成物(A-11),與實例1同樣地 進行評價。 7 (實例35) 使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液進 —步添加同量之PGMEA代替DAA,除此以外與實例13 同樣地進行,獲得負型感光性樹脂組成物(A-12)。使用 所知之負型感光性樹脂組成物(A-12),與實例1同樣地 進行評價。 (實例36) 使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液(丨),進 〜步添加同量之PGMEA代替DAA,除此以外與實例14 同樣地進行,獲得負型感光性樹脂組成物。使用 所杆之負型感光性樹脂組成物(A-13),與實例1同樣地 進行評價。 (實例37) 使用丙烯酸樹脂溶液(a)代替聚矽氧燒溶液(丨),進 53 201142506 :步添加同量之PGMEA代替DAA,除此以外與實例i5 同,地進行,獲得負型感光性樹脂組成物(A-14)。使用 所待之負型感光性樹脂組成物(A-14),與實例1同樣地 (實例38) 一使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液(i),進 了步添加同量之PGMEA代替DAA,除此以外與實例Μ 同,地進行,獲得負型感光性樹脂組成物(A-15)。使用 所得之負型感光性樹脂組成物(A-15),與實例i同樣地 進行評價。 ’ (實例39) 一使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液(i),進 了步添加同量之PGMEA代替DAA,除此以外與實例17 同,地進行,獲得負型感光性樹脂組成物(A_16)。使用 所得之負型感光性樹脂組成物(A-16),與實例1同樣地 進行評價。 一 7 (實例40) 使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液,進 s步添加同量之PGMEA代替DAA,除此以外與實例18 ,,地進行,獲得負型感光性樹脂組成物(A-17)。使用 所得之負型感光性樹脂組成物(A_17),與實例】同樣地 進行評價。 , (實例41) 使用丙烯酸樹脂溶液(a)代替聚矽氧烷溶液(i),進 54 201142506 —步添加同量之PGMEA代替DAA,除此w_ 同楛祕、隹/ 示此从外與貫例19 ,地進行’獲得負型感光性樹脂組成物⑷8) T件之負型感光性樹脂組成物(A-18),與實例i 進行評價。 °」樣地 (實例42) 使用丙烯酸樹脂溶液(a)代替聚矽氧燒溶液(丨),、 :步添加同量之PGMEA代替DAA,除此以外與實= 同樣地進行,獲得負型感光性樹脂組成物(a_19、)。 所得之負型感光性樹脂組成物(Α·19),鱼實 用 進行評價。 〃 J Η樣地 (實例43 ) 使用丙烯酸樹脂溶液(a)代替聚矽氧燒溶液(i), 了步添加同量之PGMEA代替DAA,除此以外與實例j 同樣地進行,獲得負型感光性樹脂組成物(A_2〇)。使用 所得之負型感光性樹脂組成物(A-20),與實例i同樣地 進行評價。 , (實例44) 使用丙烯酸樹脂溶液(a)代替聚矽氧燒溶液(i),進 〜步添加同量之PGMEA代替DAA,除此以外與實例22 同樣地進行,獲得負型感光性樹脂組成物(A_21)。使用 所得之負型感光性樹脂組成物(A-20),與實例i同樣地 進行評價。 (實例45) 使用丙稀酸樹脂溶液(a)代替聚石夕氧烧溶液(丨),進 55 201142506 一步添加同量之PGMEA代替DAA,除此以外與實例23 同樣地進行,獲得負型感光性樹脂組成物(A-22)。使用 所得之負型感光性樹脂組成物(A-20),與實例1同樣地 進行評價。 (實例46) 依照以下之順序而製作觸控面板構件。 (1) ITO之製作 使用濺鍍裝置HSR-521A (島津製作所股份有限公3 製造),於RF功率為i.4kW、真空度為 行12.5分鐘之濺鍍,藉此於厚度約丨mm之玻璃基板上开 成膜厚為150 nm、表面電阻為15 Ω/□之ΓΓΟ膜,塗佈je 型光阻劑(東京應化工業股份有限公司製造之 「OFPR-800」)’於8(rc下進行20分鐘之預供烤而獲得港 厚為1.1 μιη之光阻膜。使用PLA,以超高壓水銀燈介隔遠 罩對所得之膜進行圖案曝光後,使用自動顯影裝置而L 2·38 Wt% ΤΜΑΗ水溶液進行90秒之噴淋顯影,其次於^ 中沖洗30秒。其後,藉由於仞艺之Ηα/ΗΝ〇3/Η2() = ::5 (。重量比)混合溶液中浸潰8〇秒,藉此2射 〇,於5〇C之剝離液(長瀨化成股份有限公司製造之 「N-300」)進行120秒之處理,藉此除去光阻劑 有膜厚為200埃之進行了圖案加卫之透明電極的玻璃邊 板0 (2)透明絕緣膜之製作 於所得之玻璃基板上,使用負型感光性樹脂組成物 56 201142506 (A-l),依照上述之評價方法之順序而製作透明絕緣膜。 (3) 鉬/鋁/鉬積層膜(MAM)配線之製作 於所得之玻璃基板上,使用鉬及鋁作為靶,使用 H3P04/HN03/CH3C00H/H20 = 65/3/5/27 (重量比)混合溶 液作為蝕刻液,除此以外藉由與(1)同樣之順序而製作 mam配線。 (4) 透明保護膜之製作 於所得之玻璃基板上,使用負型感光性樹脂組成物 (A_l) ’依照上述之評價方法之順序而製作透明保護膜。 使用測試器而實施連接部之導通測試,確認電流之導 通。 (比較例1) 使用丙稀酸樹脂溶液(d)代替聚石夕氧烧溶液(〇,進 一步添加同量之PGMEA代替DAA,除此以外與實例1同 樣地進行,獲得樹脂組成物(Η-D。此處,丙烯酸樹脂溶 液(d)之幾酸當量為4,600 g/mol。使用所得之樹脂組成 物),與實例1同樣地進行評價。另外,未曝光部並 =溶解於2.38 wt% TMAH水溶液中,無法進行圖案加工, 進行顯影地進行其他評價。 (比較例2) 一使用丙烯酸樹脂溶液(e)代替聚矽氧烷溶液(〇,進 樣;添加同里之PGMEA代替DAA ’除此以外與實例1同 液進行,獲得樹脂組成物(H_2)。此處,丙烯酸樹脂溶 e)之綾酸當量為140 g/m〇i。使用所得之樹脂组成物 57 201142506 (H-2) ’與實例1同樣地進行評價。 (比較例3) 於頁色燈下’添加PGMEA 4 74〇 g、「ZC 58〇 (商品 名)」0.249 g、作為聚矽氧系界面活性劑之bYK 333( 1 wt% PGMEA+溶液)0.2〇〇〇 g (相當於遭度為100 ppm )、4-第三 丁基鄰苯二酚(1 wt%PGMEA溶液)1.742 g而進行攪拌。 添加「DPHA(商品名)」(5〇 wt%pGMEA 溶液)5 8〇6g、 丙烯酸樹脂溶液(a ) 7.258 g而進行攪拌。其次,以〇 45 μιη 之過濾器進行過濾,獲得樹脂組成物(Η_3)。該樹脂組成 物(Η-3)中並不含有光聚合起始劑。使用所得之樹脂組 成物(Η-3),與實例丨同樣地進行評價。另外,於曝光部、 未曝光部均具有在〇.4wt%TMAH水溶液中之溶解性,無 法進行圖案加工,未進行顯影地進行其他評價。 (比較例4) 於黃色燈下’添力σ「〇XE-01(商品名)」〇 277 g、PGMEA 3.778 g、「ZC-580 (商品名)」0.237 g、作為聚矽氧系界面 活性劑之 BYK-333 ( 1 wt% PGMEA 溶液)0.2000 g (相當 於漢度為100 ppm)、4-第三丁基鄰苯二紛(1 wt〇/〇 pGMEA $谷液)1.661 g而進行搅拌。添加丙烯酸樹脂溶液(a)i3 846 g而進行攪拌。其次,以0.45 μιη之過濾器進行過濾,獲 知樹脂組成物(Η-4)。於該樹脂組成物(Η-4)中並未含 有多官能單體。使用所得之樹脂組成物(Η_4),與實例i 同樣地進行評價。 (比較例5) 58 201142506- Adding the same amount of PGMEA instead of DAA, and performing the same with the sample, obtaining a negative photosensitive resin composition (A 〇 J; negative photosensitive resin group money (A·1)' and an example; (Example 25) Using an acrylic resin solution (b) instead of a polyfluorene gas solution (^) 50 201142506 I.-f Further adding the same amount of PGMEA instead of DAA, except for the same as in Example 2 The resin composition (A-2) was used, and the obtained negative photosensitive resin composition (A-2) was used for evaluation in the same manner as in Example 1. The developer was used in an aqueous solution of 2.38 wt% TMAH. (Example 26) A negative photosensitive resin composition (A-3) was obtained in the same manner as in Example 3 except that the same amount of PGMEA was used instead of DAA in place of the polyoxylate resin solution (c). Using the obtained negative photosensitive resin composition (A-3), it was evaluated in the same manner as in Example 1. D (Example 27) An acrylic resin solution (a) was used instead of the polyoxyalkylene solution (丨), and further added. The same amount of PGMEA replaces DAA, except for example 5 The negative photosensitive resin composition (A_4) was obtained. The obtained negative photosensitive resin composition (A-4) was used in the same manner as in Example 二. (Example 28) Using an acrylic resin solution (a) A negative photosensitive resin composition (A-5) was obtained in the same manner as in Example 6 except that the same amount of PGMEA was used instead of the DAA, and the resulting negative photosensitive resin was used. (A·5), evaluation was carried out in the same manner as in the example! (Example 29) Using a propylene glycol resin solution (a) instead of the polysulfide solution (1), proceeding to 51 201142506, the same amount of PGMEA was added instead of DAA. In the same manner as in Example 7, except that the negative photosensitive resin composition (A-6) was obtained, the same as Example 1 was used to carry out the flat 4 only 0 ~ (Example 30) ~ An acrylic resin solution (a) was used instead of the polyoxyalkylene solution (丨), and the same amount of PGMEA was added in place of DAA in the same manner as in the above, except that Example 8 was carried out to obtain a negative photosensitive resin composition. (A_7)., using the ^ = negative photosensitive resin composition (A-7), evaluated in the same manner as in Example i (Example 31) Using an acrylic resin solution (a) instead of the polyoxyalkylene solution (i), adding the same amount of PGMEA instead of DAA, and other examples In the same manner, a negative photosensitive resin composition (A_8) was obtained, and the obtained negative photosensitive resin composition (A-8) was used in the same manner as in Example 。. (Example 32) Using acrylic acid A negative photosensitive resin composition (A-9) was obtained in the same manner as in Example 1 except that the resin solution (a) was replaced by the same amount of PGMEA in place of the DAA. The negative photosensitive resin composition (A-9) thus obtained was evaluated in the same manner as in Example 1. (Example 33) An acrylic resin solution (a) was used instead of the polyoxygen oxide solution (i), and 52 201142506 was added in the same manner as in the case of the same amount of PGMEA in the same manner as in Example u to obtain a negative photosensitive resin. Composition (A-ίο). The evaluation was carried out in the same manner as in Example 1 except that the negative photosensitive resin composition (A-10) was used. (Example 34) An acrylic resin solution (a) was used instead of the polyoxyalkylene solution 〇), and the same amount of PGMEA was added instead of hydrazine, and the same procedure as in Example 12 was carried out to obtain a negative photosensitive resin composition. (A-11). The negative photosensitive resin composition (A-11) obtained was used for evaluation in the same manner as in Example 1. 7 (Example 35) A negative photosensitive resin composition (A-) was obtained in the same manner as in Example 13 except that the same amount of PGMEA was used instead of the DAA in the acrylic resin solution (a). 12). The negative photosensitive resin composition (A-12) was used for evaluation in the same manner as in Example 1. (Example 36) A negative photosensitive resin composition was obtained in the same manner as in Example 14 except that the acrylic resin solution (a) was used instead of the polyoxyalkylene solution (丨), and the same amount of PGMEA was added instead of DAA. . The negative photosensitive resin composition (A-13) of the rod was used for evaluation in the same manner as in Example 1. (Example 37) Using an acrylic resin solution (a) instead of a polyoxygen oxy-saturated solution (丨), proceeding 53 201142506: Steps were added to the same amount of PGMEA instead of DAA, and otherwise performed in the same manner as in Example i5, to obtain a negative photosensitive property. Resin composition (A-14). Using the negative photosensitive resin composition (A-14) to be used, in the same manner as in Example 1 (Example 38), an acrylic resin solution (a) was used instead of the polyoxyalkylene solution (i), and the same amount was added. In the same manner as in the example, PGMEA was used instead of the DAA to obtain a negative photosensitive resin composition (A-15). The negative photosensitive resin composition (A-15) thus obtained was evaluated in the same manner as in Example i. (Example 39) A negative photosensitive property was obtained in the same manner as in Example 17 except that the acrylic resin solution (a) was used instead of the polyoxyalkylene solution (i), and the same amount of PGMEA was added instead of DAA. Resin composition (A_16). The negative photosensitive resin composition (A-16) obtained was used for evaluation in the same manner as in Example 1. A 7 (Example 40) An acrylic resin solution (a) was used instead of the polyoxyalkylene solution, and the same amount of PGMEA was added in place of DAA in the same manner as in Example 18, to obtain a negative photosensitive resin composition. (A-17). The negative photosensitive resin composition (A-17) obtained was used for evaluation in the same manner as in the example. (Example 41) Using acrylic resin solution (a) instead of polyoxyalkylene solution (i), enter 54 201142506 - Step to add the same amount of PGMEA instead of DAA, except for this w_ the same secret, 隹 / show this from the outside and the Example 19, a negative photosensitive resin composition (A-18) of the negative electrode type photosensitive resin composition (4) 8 was obtained, and it was evaluated with Example i. °""Example (Example 42) Using an acrylic resin solution (a) instead of the polyoxygen oxy-saturated solution (丨), :: Add the same amount of PGMEA instead of DAA, and otherwise perform the same as the actual = to obtain a negative-type photosensitive Resin composition (a_19,). The obtained negative photosensitive resin composition (Α·19) was evaluated for fish use. 〃 J Η 地 (Example 43) Using the acrylic resin solution (a) instead of the polyoxygen oxy-combustion solution (i), the same amount of PGMEA was added instead of DAA, and otherwise the same as in Example j, the negative sensitization was obtained. Resin composition (A_2〇). The negative photosensitive resin composition (A-20) obtained was used for evaluation in the same manner as in Example i. (Example 44) A negative photosensitive resin composition was obtained in the same manner as in Example 22 except that the acrylic resin solution (a) was used instead of the polyoxygen oxide solution (i), and the same amount of PGMEA was added instead of DAA. (A_21). The negative photosensitive resin composition (A-20) obtained was used for evaluation in the same manner as in Example i. (Example 45) An acrylic resin solution (a) was used instead of the polysulfide solution (丨), and 55 201142506 was added in the same manner as in Example 23 except that the same amount of PGMEA was added in one step instead of the DAA. Resin composition (A-22). The negative photosensitive resin composition (A-20) obtained was used for evaluation in the same manner as in Example 1. (Example 46) A touch panel member was fabricated in the following order. (1) ITO was produced by using a sputtering apparatus HSR-521A (manufactured by Shimadzu Corporation, Ltd.), and sputtering was performed at a power of i.4 kW and a vacuum of 12.5 minutes. A ruthenium film having a film thickness of 150 nm and a surface resistance of 15 Ω/□ was formed on the substrate, and a je type photoresist ("OFPR-800" manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied at 8 (rc) A 20-minute pre-baked film was obtained to obtain a photoresist film having a thickness of 1.1 μm. Using PLA, the resulting film was subjected to pattern exposure with an ultra-high pressure mercury lamp through a remote cover, and an automatic developing device was used for L 2·38 Wt%. The hydrazine aqueous solution was subjected to spray development for 90 seconds, followed by rinsing for 30 seconds, and thereafter, by the immersion in the mixed solution of 仞α/ΗΝ〇3/Η2() = ::5 (weight ratio) In the case of a leap second, the peeling liquid of 5〇C ("N-300" manufactured by Nagase Chemical Co., Ltd.) was treated for 120 seconds, thereby removing the photoresist to have a film thickness of 200 angstroms. The glass edge plate of the transparent electrode which has been patterned and embossed 0 (2) The transparent insulating film is fabricated on the obtained glass substrate, so that Negative photosensitive resin composition 56 201142506 (Al), a transparent insulating film was produced in the order of the above evaluation method. (3) A molybdenum/aluminum/molybdenum laminated film (MAM) wiring was produced on the obtained glass substrate, and used. Molybdenum and aluminum were used as targets, and a mixed solution of H3P04/HN03/CH3C00H/H20 = 65/3/5/27 (weight ratio) was used as an etching solution, and mam wiring was produced in the same order as (1). 4) The transparent protective film was formed on the obtained glass substrate, and a transparent protective film was produced in the order of the evaluation method described above using the negative photosensitive resin composition (A-1). The conduction test of the connection portion was carried out using a tester. (Contrast Example 1) A resin was obtained in the same manner as in Example 1 except that the polyacrylic acid resin solution (d) was used instead of the polychlorinated oxygen-burning solution (〇, the same amount of PGMEA was further added instead of DAA). The composition (Η-D. Here, the acid equivalent of the acrylic resin solution (d) was 4,600 g/mol. The obtained resin composition) was evaluated in the same manner as in Example 1. Further, the unexposed portion was dissolved. At 2.38 wt% TMAH water In the solution, pattern processing could not be performed, and other evaluations were carried out by development. (Comparative Example 2) An acrylic resin solution (e) was used instead of the polyoxyalkylene solution (〇, injection; addition of PGIME in the same place instead of DAA) The same procedure as in Example 1 was carried out to obtain a resin composition (H 2 ). Here, the decanoic acid equivalent of the acrylic resin dissolved in e) was 140 g/m〇i. The obtained resin composition 57 201142506 (H-2) ' Evaluation was performed in the same manner as in Example 1. (Comparative Example 3) Under the smear lamp, 'PGMEA 4 74 〇g, "ZC 58 〇 (trade name)" 0.249 g, and bYK 333 (1 wt% PGMEA+ solution) 0.2 矽 as a polyoxo-based surfactant were added. 〇〇g (corresponding to a degree of 100 ppm) and 1.342 g of 4-tert-butyl catechol (1 wt% PGMEA solution) were stirred. The DPHA (trade name) (5 〇 wt% pGMEA solution) 5 8 〇 6 g and the acrylic resin solution (a ) 7.258 g were added and stirred. Next, filtration was carried out with a filter of 〇 45 μm to obtain a resin composition (Η_3). The resin composition (Η-3) does not contain a photopolymerization initiator. The obtained resin composition (Η-3) was used for evaluation in the same manner as in the example. Further, the exposed portions and the unexposed portions all had solubility in a wt.4 wt% TMAH aqueous solution, and it was impossible to carry out pattern processing, and other evaluations were carried out without performing development. (Comparative Example 4) Under the yellow light, 'Additional force σ "〇XE-01 (trade name)" 〇277 g, PGMEA 3.778 g, and "ZC-580 (trade name)" 0.237 g, as a polyfluorene-based interface activity Stirring BYK-333 (1 wt% PGMEA solution) 0.2000 g (equivalent to 100 ppm for Hanting) and 1.36 g of 4-tert-butyl phthalate (1 wt〇/〇pGMEA $) . The acrylic resin solution (a) i3 846 g was added and stirred. Next, filtration was carried out with a filter of 0.45 μm to obtain a resin composition (Η-4). The polyfunctional monomer was not contained in the resin composition (Η-4). The obtained resin composition (Η_4) was used for evaluation in the same manner as in Example i. (Comparative Example 5) 58 201142506

於黃色燈下,添加「〇χΕ_01(商品名)」0.285 g、pGMEA 4.990 g作為聚矽氧系界面活性劑之bYK_333 ( 1 wt% PGMEA溶液)0.2000 g (相當於濃度為1〇〇ppm)、4_第三 丁基鄰苯二酚(1 wt% pGMEA溶液)17〇9 g而進行攪拌。 添加「DPHA(商品名)」(5〇 wt% pGMEA溶液)5逼g、 丙烯酸樹脂溶液(a)7.120g而進行攪拌。其次,以〇.45μΓη 之過濾态進行過濾,獲得樹脂組成物(Η_5)。於該樹脂組 成物(Η_5)中並未含有鍅化合物。使用所得之樹脂組成 物(Η-5),與實例1同樣地進行評價。 (比較例6)Under the yellow light, add 0.285 g of "〇χΕ_01 (trade name)" and 4.990 g of pGMEA as a polyfluorene-based surfactant bYK_333 (1 wt% PGMEA solution) 0.2000 g (corresponding to a concentration of 1 〇〇 ppm). 4_Telebutyl catechol (1 wt% pGMEA solution) 17 〇 9 g was stirred. Stirring was carried out by adding "DPHA (trade name)" (5 〇 wt% pGMEA solution) to 5 g and 7.20 g of the acrylic resin solution (a). Next, filtration was carried out in a filtered state of 〇45 μΓη to obtain a resin composition (Η_5). The ruthenium compound was not contained in the resin composition (Η_5). The obtained resin composition (?-5) was used for evaluation in the same manner as in Example 1. (Comparative Example 6)

於黃色燈下,添加「〇χΕ_01(商品名)」〇 285 g、pGMEA 2·262 g、DAA 2.846 g、作為聚矽氧系界面活性劑之 BYK-333 ( 1 wt% PGMEA 溶液)〇 2〇〇〇 g (相當於濃度為 100 ppm)、4-第三丁基鄰苯二酚(丨wt% pGMEA溶液) 1.709 g而進行攪拌。添加rDpHA (商品名)」(5〇 PGMEA溶液)5.696 g、聚矽氧烷溶液(丨)712〇g而進行 攪拌。其次,以0.45 μιη之過濾器而進行過濾,獲得樹脂 組成物(Η-6)。於該樹脂組成物(Η_6)中並未含有鍅化 合物。使用所得之樹脂組成物(Η_6),與實例丨同樣^進 行評價。 (比較例7) 使用聚矽氧烷溶液(v)代替聚矽氧烷溶液(丨),除此 以外與實例1同樣地進行,獲得負型感光性樹脂組成物 (H-7)。使用所得之負型感光性樹脂組成物(H-7),與實 59 201142506 例1同樣地進行評價。另外,未曝光部並未溶解於0.4 wt% TMAH水溶液中。 201142506Under the yellow light, add "〇χΕ_01 (trade name)" 〇 285 g, pGMEA 2·262 g, DAA 2.846 g, BYK-333 (1 wt% PGMEA solution) as a polyoxygenated surfactant 〇2〇 〇〇g (corresponding to a concentration of 100 ppm) and 4-tert-butyl catechol (丨wt% pGMEA solution) 1.709 g were stirred. 5.96 g of rDpHA (trade name) (5 〇 PGMEA solution) and 712 〇g of a polyoxyalkylene solution (丨) were added and stirred. Next, filtration was carried out with a filter of 0.45 μm to obtain a resin composition (Η-6). The ruthenium compound was not contained in the resin composition (Η_6). The obtained resin composition (?_6) was used and evaluated in the same manner as in the example. (Comparative Example 7) A negative photosensitive resin composition (H-7) was obtained in the same manner as in Example 1 except that the polyoxane solution (v) was used instead of the polyoxyalkylene solution (丨). The negative photosensitive resin composition (H-7) thus obtained was used for evaluation in the same manner as in Example 1 of 2011. In addition, the unexposed portion was not dissolved in the 0.4 wt% TMAH aqueous solution. 201142506

Jui 卜 e 【CN&lt;】 圖案加工性 顯影 後殘 留 »〇 寸 in in νη in 寸 解像 度 [μιη] 〇〇 in 00 VO to CN ν〇 o Ο 〇 oo oo oo oo 00 oo oo 感光度 (mJ/cm2 ) § s 〇 Ο g s s s s s δ § s 疏 in yn 寸 寸 寸 W-ϊ cn ^Τ) yn 硬度 « X X l〇 X VO 寸 ^Τ) X X X »T) ffi X X ID ^1 »义透’ 1 S_✓ K -J· ¥峰日。 匈某a — ! 96.0% 1 96.2% 96.5% 95.8% 94.4% 93.1% 96.3% 96.1% 95.0% 95.0% 95.0% 96.2% 97.2% | 94.2% I | 95.9% 1 | 95.5% 1 96.1% 95.9% 95.3% Η,⑶(” (D)銼化合物 \ R,/^ α cs CN CN &lt;N (N (N 1 1 1 o o o 寸 寸 ο o o cn B- ¢- S- 1 1 1 械1 &amp;- ¢- 1 1 卜 * 甲氧基 苯基 2 乙氧基 l乙氧基 1乙氧基 1乙氧基 1乙氧基 I乙氧基 I乙氧基I |乙氧基| 1 1 1 崎 Β- ¢- 1 1 第三丁基 甲氧基 B- 2 正丁基 l正丁基 l正丁基 1正丁基I 1正丁基| 1正丁基1 1正丁基I |正丁基1 1 1 1 1 1 1 正丙基 笨基 1 1 1 (D)鍅化合物之種類 ZC-580 | ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 NaaoUse OZ-30M NanoUse OZ-30M BAILARZr-C20 Nacem Zirconium Nacem Zirconium Nacem Zirconium 四丙氧基錯 四苯氧基鍅 cn ? ^ ( 1 Ό » (Ν ^ ri ¥ 四丙二酸曱醋錯 四笨甲醯丙酮锆 (A)驗可溶性樹脂 羧酸當量 [g/mol] 〇 (N 1190 1 ο ο CN ο &lt;N ο CN o CN o cs irj ο CNj «τϊ o CN V) o CM ^Ti o CN o (N ο (S § § § (A)鹼可溶性樹脂 之種類 聚矽氧烷溶液(i) | 聚矽氧烷溶液(ii) 聚矽氧烷溶液(iii) 聚石夕氧烧溶液(iv〕 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 1聚矽氧烷熔液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) - 4 1 cs c/b cn X/l l ζλ v〇 OQ rp ΚΛ 00 K/l Ό\ ζΛ S-10 t/1 S-12 CO ob S-14 S-16 S-17 00 S-19 實例1 I 丨實例2 1 丨實例3 1 1實例4 I 1實例5 I 1實例6丨 1實例7j |實例81 1實例9 1 |實例l〇| Ur例 ii I |實例12| i實例A3j |實例14j |實例15| |實例16| 實例17 1實例18| 1實例19| 19 201142506Jui 卜e [CN&lt;] Residue after pattern processing development»〇寸 in in νη in inch resolution [μιη] 〇〇in 00 VO to CN ν〇o Ο 〇oo oo oo oo 00 oo oo Sensitivity (mJ/cm2 ) § s 〇Ο gsssss δ § s sparse in yn inch inch W-ϊ cn ^Τ) yn hardness « XX l〇X VO inch ^Τ) XXX »T) ffi XX ID ^1 »义透' 1 S_✓ K -J· ¥峰日. Hungarian a – 96.2% 1 96.2% 96.5% 95.8% 94.4% 93.1% 96.3% 96.1% 95.0% 95.0% 95.0% 96.2% 97.2% | 94.2% I | 95.9% 1 | 95.5% 1 96.1% 95.9% 95.3% Η,(3)("(D)锉 compound\R,/^ α cs CN CN &lt;N (N (N 1 1 1 ooo inch ο oo cn B- ¢- S- 1 1 1 1 &amp;- ¢- 1 1 ** methoxyphenyl 2 ethoxy l ethoxy 1 ethoxy 1 ethoxy 1 ethoxy I ethoxy I ethoxy I | ethoxy | 1 1 1 rugged - ¢ - 1 1 tert-butylmethoxy B-2 n-butyl l-n-butyl l-n-butyl 1-n-butyl I 1 n-butyl | 1 n-butyl 1 1 n-butyl I | n-butyl 1 1 1 1 1 1 1 n-propyl stupid 1 1 1 (D) 之 compound type ZC-580 | ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 NaaoUse OZ-30M NanoUse OZ- 30M BAILARZr-C20 Nacem Zirconium Nacem Zirconium Nacem Zirconium Tetrapropoxy phenoxytetradecyl cn? ^ ( 1 Ό » (Ν ^ ri ¥ tetramalonic acid vinegar vinegar wrong four-fold thymol acetone zirconium (A) soluble Resin carboxylic acid equivalent [g/mol] 〇(N 1190 1 ο ο CN ο &lt;N ο CN o CN o cs irj ο CNj «τϊ o CN V) o CM ^Ti o CN o (N ο (S § § § (A) Alkali Soluble Resin Type Polyoxane Solution (i) | Polyoxane Solution (ii) Polyoxane Solution (iii) Polyoxane Oxygen Solution (iv) Polyoxane Solution ( i) Polyoxane solution (i) Polyoxane solution (i) Polyoxane solution (i) Polyoxane solution (i) Polyoxane solution (i) Polyoxane solution (i) Polyoxane solution (i) 1 polyoxyalkylene melt (i) polyoxymethane solution (i) polyoxyalkylene solution (i) polyoxyalkylene solution (i) polyoxyalkylene solution (i) Polyoxane solution (i) Polyoxane solution (i) - 4 1 cs c/b cn X/ll ζλ v〇OQ rp ΚΛ 00 K/l Ό\ ζΛ S-10 t/1 S-12 CO Ob S-14 S-16 S-17 00 S-19 Example 1 I 丨 Example 2 1 丨 Example 3 1 1 Instance 4 I 1 Instance 5 I 1 Instance 6 丨 1 Instance 7j | Example 81 1 Instance 9 1 | 〇 | Ur example ii I | Example 12 | i instance A3j | instance 14j | example 15 | | example 16 | example 17 1 instance 18 | 1 example 19 | 19 201142506

Jas6 卜 ε οο 00 § S m X yr» ffi 95.6% 95.1% 1 1 ?基1 1 1乙氧基I δ- 1 正丁基 1 ,tO 3: o 二氣雙(η5-環戊二烯基) 锆(II) 520 520 聚矽氧烷溶液(i) 聚矽氧烷溶液(i) S-20 S-21 實例20 實例21 ΰ 201142506Jas6 卜 ε οο 00 § S m X yr» ffi 95.6% 95.1% 1 1 ? group 1 1 1 ethoxy I δ-1 n-butyl 1 , tO 3: o dioxo bis (η5-cyclopentadienyl) Zirconium (II) 520 520 Polyoxane solution (i) Polyoxane solution (i) S-20 S-21 Example 20 Example 21 ΰ 201142506

Ja(N06 卜 ε 圖案加工性 顯影 後殘 留 W-i 寸 l〇 »/*&gt; »Τ) in 寸 解像 度 [μπι] 00 m XTi r-H v〇 〇 〇 〇 00 00 00 〇〇 00 oo 感光度 (mJ/cm2) S 〇 (N 〇 o g S S § s § δ 耐濕 熱性 _ tr&gt; iT) 寸 寸 yr&gt; CO to u-ϊ ίο 硬度 ffi X ^Τ) κ X a ffi v〇 K Κ ffi ffi in ffi K X κ «ο ^ Ο 哿苍i 96.5% | 96.2% I 1 96.3% 1 94.7% 91.5% 96.5% 96.0% 94.7% 94.7% 94.7% 96.5% 97.2% 94.2% 96.4% 96.2% 95.5% 96.1% ⑼錯化杨 a &lt;N CN CN cs &lt;N CN 1 1 1 ο (N &lt;N 寸 寸 ο ο cn Pi B- ¢- 1料1 B- 移1 1 1 1 硝 Β- δ- s- 1 1 Η 、,1难 曱氧基 2 乙氧基 乙氧基 乙氧基 乙氧基 乙氧基 I乙氧基I 乙氧基 1 1 1 Β- ¢- 1 1 卜 、,㈤ 甲氧基 5 正丁基 1正丁基 1正丁基 1正丁基| 丨正丁基| I正丁基I 1正丁基1 1 1 1 1 1 1 正丙基 苯基 1 I (D)鍅化含物之種 類 ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 ! NanoUse OZ-30M NanoUse OZ-30M BAILAR Zr-C20 Nacem Zirconium Nacem Zirconium S .2 _S 〇 N i z 四丙氧基錄 四苯氧基銼 硪雄 Ψ Έ ^ (1 v〇 y &lt;N ^ Cl Λ 0 ^ 四丙二酸甲酯锆 1 (A)鹼可溶性樹脂 羧酸當量 [g/mol] 〇 ν〇 〇 Os 00 〇 〇 v〇 ο ν〇 o v〇 o VO 〇 V〇 〇 VO vr&gt; ο ν〇 tn ο v〇 o v〇 in 〇 Ο ν〇 〇 v〇 § δ (A)鹼可溶性樹脂 之種類 丙烯酸樹脂溶液(a) 丙烯酸樹脂溶液(y 丙烯酸樹脂溶液(C〕 丙烯酸樹脂溶液(a〕 丙烯酸樹脂溶液(a) 丙烯酸樹脂溶液(a) 丙婦酸樹脂溶液(a〕 丙烯酸樹脂溶液(a〕 丙烯酸樹脂溶液(a〕 丙烯酸樹脂溶液(a〕 i丙烯酸樹脂溶液(a〕 丙烯酸樹脂溶液(a〕 丙烯酸樹脂溶液(a〕 丙烯酸樹脂溶液(a) 丙烯酸樹脂溶液(a) 丙烯酸樹脂溶液(a〕 丙烯酸樹脂溶液(a〕 1—Η &lt; (N &lt; cn &lt; 寸 &lt; V-J &lt; &lt; 卜 &lt;: 00 &lt;: ON &lt; 1 A-10 I A-ll A-12 A-13 A-14 A-15 A-16 A-17 實例24| |實例25| |實例26 |實例27| 1實例28| |實例29| 丨實例30| 丨實例31| 1實例32| |實例33| |實例34| |實例35| |實例36| |實例37| |實例38| 實例39 |實例40| 201142506Ja(N06 ε ε pattern processing development residual Wi inch l〇»/*&gt; »Τ) in inch resolution [μπι] 00 m XTi rH v〇〇〇〇00 00 00 〇〇00 oo sensitivity (mJ/ Cm2) S 〇(N 〇og SS § s § δ Moisture resistance _ tr> iT) inch yr> CO to u-ϊ ίο hardness ffi X ^Τ) κ X a ffi v〇K Κ ffi ffi in ffi KX κ «ο ^ Ο 哿 i i 96.5% | 96.2% I 1 96.3% 1 94.7% 91.5% 96.5% 96.0% 94.7% 94.7% 94.7% 96.5% 97.2% 94.2% 96.4% 96.2% 95.5% 96.1% (9) Misty Yang a &lt;N CN CN cs &lt;N CN 1 1 1 ο (N &lt;N inch inch ο cn pi Pi B- ¢- 1 material 1 B-shift 1 1 1 1 Β Β - δ- s- 1 1 Η , , 1 difficult to oxy 2 ethoxy ethoxy ethoxy ethoxy ethoxy I ethoxy I ethoxy 1 1 1 Β - ¢ - 1 1 卜,, (5) methoxy 5 n- butyl 1 n-Butyl 1 n-butyl 1 n-butyl | 丨-n-butyl | I n-butyl I 1 n-butyl 1 1 1 1 1 1 1 n-propylphenyl 1 I (D) Deuterated content type ZC -580 ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 ZC-580 ! NanoUse OZ-30M NanoUse OZ-30M BAILAR Zr-C20 N Acem Zirconium Nacem Zirconium S .2 _S 〇N iz tetrapropoxy octaphenoxy oxime Έ ^ (1 v〇y &lt;N ^ Cl Λ 0 ^ tetramethyl malonate zirconium 1 (A) Alkali-soluble resin carboxylic acid equivalent [g/mol] 〇ν〇〇Os 00 〇〇v〇ο ν〇ov〇o VO 〇V〇〇VO vr&gt; ο ν〇tn ο v〇ov〇in 〇Ο ν〇〇 V〇§ δ (A) Type of alkali-soluble resin Acrylic resin solution (a) Acrylic resin solution (y Acrylic resin solution (C) Acrylic resin solution (a) Acrylic resin solution (a) Acrylic resin solution (a) Propionic acid Resin solution (a) Acrylic resin solution (a) Acrylic resin solution (a) Acrylic resin solution (a) Acrylic resin solution (a) Acrylic resin solution (a) Acrylic resin solution (a) Acrylic resin solution (a) Acrylic resin Solution (a) Acrylic resin solution (a) Acrylic resin solution (a) 1 - Η &lt; (N &lt; cn &lt; inch &lt; VJ &lt;&lt;&lt;: 00 &lt;: ON &lt; 1 A- 10 I A-ll A-12 A-13 A-14 A-15 A-16 A-17 Example 24| |Example 25| |Example 26 |Example 27|1Example 28| |Example 29| 丨Example 30| 丨Example 31|1 Instance 32| |Example 33| |Example 34| |Example 35| |Example 36| |Example 37| |Example 38| |Example 40| 201142506

Jursl06 卜 e 寸&lt;】 圖案加工性 顯影 後殘 留 in κη in 1 ΙΓί 解像度 [μπι] 00 00 00 00 〇 00 1 1 1 1 00 00 1 感光度 (mJ/cm2) § § § δ 〇 1 &gt;300 1 &gt;300 § § 1 耐濕 熱性 in CO cn (N 寸 V) ^Η 硬度 X X K in V) ffi ΙΛ X ffi cn &lt;6B X X V-) 硬化膜之 透射率 (λ=400 nm,膜厚 1.5 μπι) I 95.4% I 95,6% 95.1% 95.2% 94.4% 96.4% 96.0% 95.8% 96.4% 96.5% 1 97.5% 1 97.5% J (1) (D)錯化合物 a Π C o 1 1 1 &lt;Ν fS &lt;N CN 1 1 CN 2 笨基 L^l 1 1 1 曱基 甲基 1 1 2 5硪 IIA] 1 1 1 乙氧 基 5硪 乙氧 基 5硪 1 1 乙氧 基 5 1 正丁基 1 1 1 正丁基 正丁基 正丁基 正丁基 1 1 正丁基 (D)鍅化合物之種類 四苯曱醖丙酮锆 s t lR&gt; S is 4 &lt;0 二氣雙(η5-環戊二烯基) 锆 氩氣雙(η5-環戊二烯基) 結 韶矣 ^ Ψ δ- ^ «δέ &gt;s^ u| B ZC-580 ZC-580 ZC-580 ZC-580 1 1 ZC-580 (A)鹼可溶性樹脂 羧酸當量 [g/mol] 1 560 560 560 560 560 4600 ο 560 560 1 560 1 1 520 1 〇 (A)鹼可溶性樹脂之 種類 丙烯酸樹脂溶液(a) 丙烯酸樹脂溶液(a) 丙烯酸樹脂溶液(a) 丙烯酸樹脂溶液(a) 丙稀酸樹脂溶液(a) 丙烯酸樹脂溶液(d) 丙稀酸樹脂溶液(e) 丙烯酸樹脂溶液(a) 丙烯酸樹脂溶液(a) 丙烯酸樹脂溶液(a) 聚矽氧烷溶液(i) 聚矽氧烷溶液(V) 組成 物 | A-18 I A-19 A-20 A-21 A-22 »·Η a H-2 H-3 H-4 H-7 |實例41 I 實例42 實例43 實例44 實例45 比較例1 比較例2 比較例3 比較例4 1比較例5] |比較例6| 比較例7 寸9 201142506 [產業上之可利用性] 本發明之負型感光性樹脂組成物硬化而所得之硬化膜 除了可適宜地用於觸控面板之保護膜等各種硬塗膜以外, 亦可適宜地用於觸控面板用絕緣膜、液晶或有機EL顯示 器之TFT用平坦化膜、金屬配線保護膜、絕緣膜、抗反射 膜、抗反射薄膜、光學濾光片、彩色濾光片用保護層、柱 材等中。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精神 和範圍内’當可作些許之更動與潤_,因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖!是觸控面板構件之製造中的各步驟後之概 圖0 圖2.是表示觸控面板構件之概略剖面圖。 【主要元件符號說明】 1 :玻璃基板 2·透明電極 3 :透明絕緣膜 4 :配線電極 5 :透明保護膜 65Jursl06 卜e inch&lt;] Remaining in pattern processing development in κη in 1 ΙΓ ί Resolution [μπι] 00 00 00 00 00 00 00 1 1 1 1 00 00 1 Sensitivity (mJ/cm2) § § § δ 〇1 &gt; 300 1 &gt;300 § § 1 Moisture and heat resistance in CO cn (N inch V) ^ Η Hardness XXK in V) ffi ΙΛ X ffi cn &lt;6B XX V-) Transmittance of hardened film (λ = 400 nm, film Thickness 1.5 μπι) I 95.4% I 95,6% 95.1% 95.2% 94.4% 96.4% 96.0% 95.8% 96.4% 96.5% 1 97.5% 1 97.5% J (1) (D) False compound a Π C o 1 1 1 &lt;Ν fS &lt;N CN 1 1 CN 2 Stupid L^l 1 1 1 Mercaptomethyl 1 1 2 5硪IIA] 1 1 1 Ethoxy 5 硪 ethoxy 5 硪 1 1 ethoxy 5 1 n-butyl 1 1 1 n-butyl n-butyl n-butyl n-butyl 1 1 n-butyl (D) hydrazine compound type tetraphenyl hydrazine zirconium st lR> S is 4 &lt; 0 digastric double ( Η5-cyclopentadienyl) zirconium argon bis(η5-cyclopentadienyl) 韶矣^ Ψ δ- ^ «δέ &gt;s^ u| B ZC-580 ZC-580 ZC-580 ZC-580 1 1 ZC-580 (A) Alkali-soluble resin carboxylic acid equivalent [g/mol] 1 560 560 560 560 560 4600 ο 560 560 1 560 1 1 520 1 〇 (A) type of alkali-soluble resin acrylic resin solution (a) acrylic resin solution (a) acrylic resin solution (a) acrylic resin solution (a) acrylic resin solution (a) acrylic resin solution (d) Acrylic resin solution (e) Acrylic resin solution (a) Acrylic resin solution (a) Acrylic resin solution (a) Polyoxane solution (i) Polyoxane solution (V) Composition | A-18 I A -19 A-20 A-21 A-22 »·Η a H-2 H-3 H-4 H-7 | Example 41 I Example 42 Example 43 Example 44 Example 45 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 1 Comparative Example 5] |Comparative Example 6|Comparative Example 7 Inch 9 201142506 [Industrial Applicability] The cured film obtained by curing the negative photosensitive resin composition of the present invention can be suitably used for a touch panel. In addition to various hard coating films such as a protective film, it can also be suitably used for an insulating film for a touch panel, a planarizing film for a TFT of a liquid crystal or an organic EL display, a metal wiring protective film, an insulating film, an antireflection film, and an antireflection film. , optical filters, protective layers for color filters, pillars, etc. Although the present invention has been disclosed in the above preferred embodiments, the present invention is not intended to limit the invention, and it is intended that the invention may be modified and practiced without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. [Simple diagram of the diagram] Figure! It is an outline of each step in the manufacture of the touch panel member. Fig. 0 is a schematic cross-sectional view showing the touch panel member. [Description of main component symbols] 1 : Glass substrate 2 · Transparent electrode 3 : Transparent insulating film 4 : Wiring electrode 5 : Transparent protective film 65

Claims (1)

201142506 七、申請專利範圍: 1. 一種負型感光性樹脂組成物,其含有(A)羧酸當 量為200 g/mol以上1,400 g/mol以下之鹼可溶性樹脂、(B) 光聚合起始劑、(C)多官能單體、(D)锆化合物。 2. 如申請專利範圍第1項所述之負型感光性樹脂組成 物’其中上述負型感光性樹脂組成物是硬化膜形成用組成 物。 3.如申請專利範圍第1項或第2項所述之負型感光性 樹脂組成物,其中上述負型感光性樹脂組成物是保護膜形 成用組成物。 4.如申請專利範圍第1項至第3項中任一項所述之負 型感光性樹脂組成物’其中上述(A)羧酸當量為200g/m〇1 以上1,400 g/m〇l以下之鹼可溶性樹脂是具有乙烯性不飽 和鍵之丙婦酸樹脂。 5·如申請專利範圍第1項至第3項中任一項所述之負 型感光性樹脂組成物’其中上述(A)羧酸當量為2〇〇g/m〇i 以上1,400 g/m〇l以下之鹼可溶性樹脂是具有乙烯性不飽 和鍵之聚&gt;5夕氧烧。 6.如申請專利範圍第丨項至第5項中任一項所述之負 型感光性樹脂組成物,其巾上述(D) #化合物是平均粒 徑為100 run以下之氧化鍅粒子。 ’ 負 1) 、7.如申請專利範圍第1項至第5項中任一項所述之 型感光性獅組成物,其巾上述⑼触合物是通式( 所表示之化合物之任意丨種以上, 66 201142506 [化1]201142506 VII. Patent application scope: 1. A negative photosensitive resin composition containing (A) an alkali-soluble resin having a carboxylic acid equivalent of 200 g/mol or more and 1,400 g/mol or less, (B) photopolymerization Starting agent, (C) polyfunctional monomer, (D) zirconium compound. 2. The negative photosensitive resin composition as described in claim 1, wherein the negative photosensitive resin composition is a cured film forming composition. 3. The negative photosensitive resin composition according to the first or second aspect of the invention, wherein the negative photosensitive resin composition is a protective film forming composition. The negative photosensitive resin composition of any one of the above-mentioned (A) carboxylic acid equivalents of 200 g/m〇1 or more and 1,400 g/m〇. The following alkali-soluble resin is a propylene glycol resin having an ethylenically unsaturated bond. The negative photosensitive resin composition of any one of the above-mentioned (A) carboxylic acid equivalent is 2 〇〇g/m〇i or more and 1,400 g. The alkali-soluble resin of /m〇l or less is a polyglycol having an ethylenically unsaturated bond. The negative photosensitive resin composition according to any one of the preceding claims, wherein the (D) # compound is a cerium oxide particle having an average particle diameter of 100 run or less. The photosensitive lion composition of any one of Claims 1 to 5, wherein the (9) contact compound is a general formula (any compound of the compound represented). More than, 66 201142506 [Chemical 1] 3 YRl表示氫、烷基、芳基、烯基及其取代物,R2及 '表不氮、烧基、芳基、烯基、烷氧基及其取代物;多個 R、R及R3可相同亦可不同;n表示〇〜4之整數)。 ^ 一種觸控面板保護膜,其是使如申請專利範圍第i 項至第7項巾任—項所述之貞減光雜驗成物硬化而 成。 9. 一種金屬配線保護膜,其是使如申請專利範圍第^ 項至第7項中任一項所述之負塑感光性樹脂組成物硬化而 成。 ίο. —種觸控面板構件,其具備如申請專利範圍第夏 項至第7項中任一項所述之負蜇感光性樹脂組成物之硬化 臈’藉由該硬化膜而保護含鉬金屬配線。 673 YRl represents hydrogen, alkyl, aryl, alkenyl and their substituents, R2 and 'non-nitrogen, alkyl, aryl, alkenyl, alkoxy and their substituents; multiple R, R and R3 The same can be different; n means an integer of 〇~4). ^ A touch panel protective film which is obtained by hardening a ruthenium dimming composition as described in the items of items i to 7 of the patent application. A metal wiring protective film which is obtained by hardening a negative photosensitive photosensitive resin composition according to any one of the above claims. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> Wiring. 67
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