201140704 六、發明說明： 【發明所屬之技術領域】 本發明係有關於半導體裴置之製造技術，特別係有關 於一種半導體晶片之模封方法。 【先前技術】 以往既有的半導體封裝技術主要可區分為兩種：一種 是轉移模封（transfer molding)，另一種是壓縮模封 (compression molding)。一般而言，為了能達到大量生 _ 產’通常是採用轉移模封的方式形成模封膠體。在轉移 模封製程中’先以人工或自動送料方式將預封裝件（例如 已设置晶片之基板與導線架）送入由上下模具構成之模 八中’利用以高壓夾持上下模具以閉合模穴。之後，將 樹脂膠餅（pellet)預熱使其具有流動性並利用注入器加 壓經流道（runner)灌入模穴中，樹脂可流動填滿整個模 八’再經過烘烤固化後即完成半導體封裝構造之模封膠 _ 體雖使用轉移模封技術可適用於密封半導體晶片大量 生產，但必須要設計對應之上下模具，並且在灌入樹脂 至模穴時，會有產生氣泡與模流平衡之問題，以及在流 道内有殘留樹脂的浪費。另，在壓縮模封製程中，是在 壓縮模封之前先酌量取用適當之膠塊或小顆粒狀壓縮模 樹月曰並置放於預封裝件上。之後進行上下模具的加熱 壓合動作，以使壓縮模樹脂固化成型，以完成半導體封 裝構造之模封膠體。使用壓縮模封技術時，在上下模壓 合過程常會在上下模之間隙造成樹脂溢膠之間題，上下 201140704 模的壓Q力也4易產生線歪’另因無排氣機制易造成模 封膠體之表面空洞之風險。 一種習知半導體晶片 201001572號專利案「利 之模封方法，揭示於公開編號 用壓模封裝積體電路晶粒」，適 用的預封裝件係為積體電路晶粒。首&，提供—適用於 壓縮模封之模具組合結構，包含—底板、—模具框架以 及-塞壓部件1模具框㈣為—環形結構，與該底板 上黏著膜結合而形成為一201140704 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a manufacturing technique of a semiconductor device, and more particularly to a method of molding a semiconductor wafer. [Prior Art] Conventional semiconductor packaging techniques can be mainly classified into two types: one is transfer molding, and the other is compression molding. In general, in order to achieve a large amount of production, a molding gel is usually formed by transfer molding. In the transfer molding process, the pre-packages (for example, the substrate and the lead frame of the wafer) are fed into the mold formed by the upper and lower molds by manual or automatic feeding, and the upper and lower molds are clamped by high pressure to close the mold. hole. Thereafter, the resin pellet is preheated to have fluidity and is pressurized into the cavity by a syringe pressurization, and the resin can flow to fill the entire mold and then bake and solidify. The mold encapsulation of the semiconductor package structure is completed. Although the transfer molding technique can be applied to the mass production of the sealed semiconductor wafer, it is necessary to design the corresponding upper mold, and when the resin is poured into the cavity, bubbles and molds are generated. The problem of flow balance and the waste of residual resin in the flow path. In addition, in the compression molding process, a suitable rubber block or a small granular compression mold is placed and placed on the pre-package before the compression molding. Thereafter, the upper and lower molds are subjected to a heating press-fitting operation to cure the compression mold resin to complete the mold sealing body of the semiconductor package structure. When using the compression molding technology, the press-fitting process in the upper and lower molds often causes problems between the resin and the glue in the gap between the upper and lower molds. The pressure of the upper and lower 201140704 molds is also prone to generate a line 歪', and the mold-free colloid is easily caused by the non-exhaust mechanism. The risk of surface voids. A conventional semiconductor wafer 201001572 Patent "Method of Sealing, disclosed in the publicly-numbered die for packaging integrated circuit die", the applicable pre-package is an integrated circuit die. First &, provided - a mold assembly structure suitable for compression molding, comprising a bottom plate, a mold frame, and a plug member (4) as a ring structure, which is combined with the adhesive film on the bottom plate to form a
開放模穴。預封裝件黏附於該 黏著膜上。施配粒狀壓縮模樹脂於該開放模穴内。在壓 縮模封過程中，包含該塞壓部件之模具組合結構同在一 加熱裝置内，加熱該壓縮模樹脂直到一足以熔化該壓縮 模樹脂之升高溫度，並利用該塞壓部件的下壓，提供適 當壓力予已熔化之樹脂，保持熱與壓力直到樹脂固化.。 預加熱再施壓的步驟相當重要，預加熱必須使粒狀樹脂 完全達到熔化方可被擠壓流動，否則.不完全熔化的樹脂 流動效應（mold flow effect)容易會產生線歪（Wire sweep) 與表面空洞（Surface void)風險。此外，熔化的樹脂在高 溫尚壓擠壓下冬易溢流到平板狀塞壓部件之側邊，當樹 脂固化後會造成塞壓部件的脫模困難。 【發明内容】 有繁於此，本發明之主要目的係在於提供一種半導體 Β曰片之模封方法’完全消除習知壓縮模封的溢膠現象， 並能夠防止線歪與表面空洞之情況，以改善產品外觀不 良，進而提升生產良率。 201140704Open the cavity. The pre-package is adhered to the adhesive film. A granular compression molding resin is applied to the open cavity. In the compression molding process, the mold assembly structure including the plugging member is in the same heating device, and the compression molding resin is heated until an elevated temperature sufficient to melt the compression molding resin, and the pressing of the plugging member is utilized. Provide appropriate pressure to the molten resin to maintain heat and pressure until the resin cures. The preheating and pressure application step is very important. The preheating must be such that the granular resin is completely melted before it can be squeezed. Otherwise, the incompletely melted resin flow effect tends to produce wire sweep. Risk with Surface Void. In addition, the molten resin overflows to the side of the flat plug member under high temperature and pressure extrusion, and the demolding of the plug member is difficult when the resin is cured. SUMMARY OF THE INVENTION In view of the above, the main object of the present invention is to provide a method for molding a semiconductor wafer, which completely eliminates the overflow phenomenon of the conventional compression molding, and can prevent the occurrence of turns and surface voids. In order to improve the appearance of the product, and thus improve production yield. 201140704
本發明的目的及解決其技術問題是採用以下技術方 案枣實現的。本發明揭示一種半導體晶片之模封方法， 主要包含以下步驟。提供一下模板，係具有一基板容置 槽與一周緣擋環。裝載一基板於該下模板之該基板容置 槽内該基板上已設置有複數個晶片。以粉體喷灑方式 使粒狀樹脂形成於該基板容置槽内，以使該粒狀樹脂覆 蓋該基板及該些晶片。壓平該粒狀樹脂，係藉由一整平 壓板嵌陷於該基板容置槽内，以使該粒狀樹脂具有一均 勻整平之上表面，且不使該粒狀樹脂.溶化。移除該整平 壓板，使其遠離該下模板。移動該下模板至一烘烤爐内， 在無加壓且不遮蓋該基板容置槽的水平狀態下加熱該粒 狀樹脂，使其同化成型為一模封膠體。 本發明的目的及解決其技術問題還可採用以下技術 措施進一步實現。 在前述的半導體晶, 守日曰之模封方法中，上述壓平該粒狀 樹脂之步驟係可為常溫下實施。 在則述的半導體晶片之模封方法中，在上述裝載該基 板之步驟中’該基板上已設置有複數個銲線，以電性連 接該些晶片至該基板。 在前述的半導體晶片之槿封 乃i模封方法中，在上述裝載該4 板之步驟中，該基板容置播向 直槽内可預先鋪設一離形薄膜〇 在前述的半導體晶片之模封 · ^ 供封方法中，該離形薄膜係1 更貼附於該周緣擋環之内壁。 在前述的半導體晶片之模私 襄封方法中，該下模板係寸； 201140704 一傳輸式置膠平台。 片 明 由以上技術方案可以看出，本發明之形成半導體 之模封方法’具有以下優點與功效：The object of the present invention and solving the technical problems thereof are achieved by the following technical solutions. The invention discloses a method for molding a semiconductor wafer, which mainly comprises the following steps. The template is provided with a substrate receiving groove and a peripheral retaining ring. A plurality of wafers are disposed on the substrate in which the substrate is loaded in the substrate receiving groove of the lower template. A granular resin is formed in the substrate accommodating groove by powder spraying so that the granular resin covers the substrate and the wafers. The granular resin is flattened by being embedded in the substrate accommodating groove by a flat platen so that the granular resin has a uniform flat upper surface without melting the granular resin. The flattening platen is removed away from the lower template. The lower template is moved into a baking oven, and the granular resin is heated in a horizontal state without pressing and covering the substrate receiving groove, and is assimilated into a molding compound. The object of the present invention and solving the technical problems thereof can be further realized by the following technical measures. In the above-described semiconductor crystal, stencil sealing method, the step of flattening the granular resin may be carried out at normal temperature. In the method of molding a semiconductor wafer as described above, in the step of loading the substrate, a plurality of bonding wires are provided on the substrate to electrically connect the wafers to the substrate. In the above-described semiconductor wafer sealing method, in the step of loading the four plates, the substrate can be preliminarily laid in a straight groove to form a release film, and the semiconductor wafer is molded. · ^ In the sealing method, the release film system 1 is attached to the inner wall of the peripheral retaining ring. In the foregoing method for privately sealing a semiconductor wafer, the lower template is inch; 201140704 is a transmission type placement platform. It can be seen from the above technical solutions that the method for forming a semiconductor of the present invention has the following advantages and effects:
一、可藉由以粉體噴麗方式使粒狀樹脂形成於基板容置 槽内以及加熱烘烤之前壓平粒裝樹脂作為其中之一 技術手段'在烘烤固化粒裝樹脂時已預先移除整平 壓板’完全消除習知壓縮模封的溢膠現象，能夠防 止線歪與表面空洞之情況，以改善產品外觀不良， 進而提升生產良率。 【實施方式】 以下將配合所附圖示詳細說明本發明之實施例，然應 注意的是’該些圖示均為簡化之示意圖，僅以示意方法 來說明本發明之基本架構或實施方法，故僅顯示與本案 有關之元件與組合關係’圖中所顯示之元件並非以實際 實施之數目、形狀、尺寸做等比例繪製，某些尺寸比例 與其他相關尺寸比例或已誇張或是簡化處理，以提供更 清楚的描述。實際實施之數目、形狀及尺寸比例為一種 選置性之設計，詳細之元件佈局可能更為複雜。 依據本發明之一具體實施例，一種半導體晶片之模封 方法舉例說明於第1至7圖，各步驟詳細說明如下。 請參閱第1圖所示，提供一下模板110，係具有一基 板容置槽111與一周緣擋環11 2。該基板容置槽Π1之形 狀係對應於預封裝件之基板，通常為矩形槽，以對應具 有基板條形狀之基板。在本實施例中，該下模板11 0係 m 6 201140704 可為一傳輸式置膠平台。換言之，該下模板11〇並非是 固定於單一處理機台，而能夠輕易地安裝至一處理機 台’再卸除並移動至其它處理機台，以便於後續製程之 進灯。此外’該周緣擋環112係可為模組化結合至該基 板谷置槽111之周邊’可因應製程所需而選擇性拆卸該 周緣擋環11 2。 請參閱第2圖所示，裝載一基板120於該下模板11〇 之該基板谷置槽111内，該基板120上已設置有複數個 晶片121。在本實施例中，該基板12〇上另設置有複數 個鲜線122 ’以電性連接該些晶片12丨至該基板丨2〇。詳 細而言，該基板120係可為一特定用途之印刷電路板 (pHnted citcuit board，pcB)，用以提供電性連接並作為 半導體封裝結構内晶片承載之部件，例如記憶卡基板或 BGA(球格陣列）封裝載板。該些晶片121係已形成有積 體電路（integrated circuit，Ic)之半導體元件，例如：記 憶體、邏輯元件以及特殊應用積體電路（ASIC)，其係為 由一晶圓（wafer)分割而成若干顆粒狀之晶片。該些晶片 1 2 1亦可為堆疊型態（圖中未繪出但不可超過該周緣擋 環112之上表面。較佳地，該基板容置槽1U内可預先 鋪設一離形薄膜1 70，以使由粒狀樹脂固化形成之模封 膠體可輕易地由該下模板110脫離。詳細而言，該離形 薄膜170係隔離該基板12〇與該基板容置槽u丨。該離 形薄膜170係可更貼附於該周緣擋環112之内壁U3。 請參閱第3圖所示’藉由一喷嘴Η〗以粉體喷麗 201140704 (powder spraying)方式使粒狀樹脂130形成於該基板容 置槽111内，以使該粒狀樹脂130覆蓋該基板120及該 些晶片121。該粒狀樹脂130之顆粒尺寸係介於〇.〇1毫 米（mm)至0.5毫米（mm)之間，其成份包含熱固化樹脂、 矽氧填充劑、固化促進劑等等，可預先儲放在一儲料桶 内，再由該喷嘴132導出。此外，該喷嘴丨32係能以往 復S形方式移動於該基板容置槽ill之上方，並同時噴 灑該粒狀樹脂1 3 0，使得該粒狀樹脂1 3 〇能分散於該基 β 板120上。 請參閱第4圖所示’由於該喷嘴132之移動路徑的影 響’在喷麗完成後該粒狀樹脂130分佈於該基板120上 可能會形成有高低差之問題，而呈現未均勻分散於該基 板120之情況。在此提供一整平壓板14〇，並使該整平 壓板140對準於該下模板11〇之該基板容置槽丨丨丨。接 著，藉由一向下作用力使該整平壓板14〇之一整平面141 鲁 朝向該粒狀樹脂130之方向下降。在本實施例中，.該整 平壓板140之尺寸係可不大於該基板容置槽U1，以使 該整平壓板140能向下嵌陷於該基板容置槽ιη内。 請參閱第5圖所示’藉由該整平壓板14〇向下壓平該 粒狀樹脂130’該整平壓板i 4〇嵌陷於該基板容置槽m 内，以使該粒狀樹脂130具有一均勻整平之上表面 131 (如第6圖所示）。該上表面131仍為粉體表面。須特 別注意的是，在壓平步驟中，該整平壓板14〇的壓平力 量與壓平時溫度不可使該粒狀樹脂丨30產生熔化的液態 201140704 - 流動。在一較佳實施例中，壓平該粒狀樹脂130之步驟 係可為常溫下實施，所以在本步驟中尚未到達該粒狀樹 脂130之熔化溫度，而使該粒狀樹脂.13〇能保持為固態 的顆粒狀。 請參閱第6圖所示，移除該整平壓板14〇而遠離該下 模板11 0，使得該粒狀樹脂丨3 〇之該上表面i 3 i顯露於 該基板容置槽111内。此時，該粒狀樹脂13〇係已均勻 分散於該基板1 2〇上與該些晶片1 2 1之間隙内，並覆蓋 該些晶片121與該些銲線122。 請參閱第7圖所示，移動該下模板11〇至一烘烤爐 150内，在無加壓且不遮蓋該基板容置槽^的水平狀 態下加熱該粒狀樹脂130，使該粒狀樹脂13〇固化成型 為一模封膠體160。請配合參酌第6圖所示，由於該粒 狀樹脂130在該整平壓板14〇之壓平步驟後，已呈現為 較松實且均勻平整之狀態，故在加熱後該粒狀樹脂1 3 〇 # 不會有過度流動之疑慮，以穩定地形成該模封膠體 1 60 ’並且完全無溢膠現象，更不會沾黏到習知上模具侧 邊。此外，無需要習知上模具的遮蓋與施壓，故有利於 該粒狀樹脂130在熔化至固化之過程中排出在該粒狀樹 脂1 3 0之間隙空氣。 ®此’本發明提供一種類似壓縮模封但無上下模壓縮 動作的封裝方法’在烘烤固化之前預先整平粒狀樹脂， 以改善粒狀樹腊之均勻性（Evenness)，預先防止粒狀樹脂 的流動’達到烘烤過程零溢膠與低流動之功效，並能解 201140704 決習知壓縮模封中粒狀樹脂流動所導致的製程上問題， 例如線歪（Wire sweep)、表面空洞（Surface v〇id)、溢膠於 上模具之側緣等問題，以期改善產品外觀不良問題，進 而提升生產良率。此外，本發明之方法相較於習知壓縮 模封技術，具有-次烘烤固化符合環保要求、更加省料 與容易排氣之功效。 以上所述，僅是本發明的較佳實施例而已，並非對本1. The method of forming a granular resin in a substrate accommodating groove by powder pulverization and flattening the granulated resin before heating baking as one of the technical means 'pre-shifted when baking the cured granule resin In addition to the leveling platen' completely eliminates the overflow phenomenon of the conventional compression molding, it can prevent the situation of the wire defects and the surface voids, so as to improve the appearance of the product and improve the production yield. The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, in which Therefore, only the components and combinations related to the case are shown. The components shown in the figure are not drawn in proportion to the actual number, shape and size of the actual implementation. Some ratios of dimensions and other related dimensions are either exaggerated or simplified. To provide a clearer description. The actual number, shape and size ratio of the implementation is an optional design, and the detailed component layout may be more complicated. In accordance with an embodiment of the present invention, a method of molding a semiconductor wafer is illustrated in Figures 1 through 7, and the steps are described in detail below. Referring to Fig. 1, a template 110 is provided with a substrate receiving groove 111 and a peripheral retaining ring 11 2 . The shape of the substrate receiving groove 1 corresponds to the substrate of the pre-package, and is generally a rectangular groove to correspond to the substrate having the shape of the substrate strip. In this embodiment, the lower template 110 is m 6 201140704, which may be a transmission type placement platform. In other words, the lower die plate 11 is not fixed to a single processing machine, but can be easily mounted to a processing machine' and then unloaded and moved to other processing machines for subsequent processing. In addition, the peripheral retaining ring 112 can be modularly coupled to the periphery of the substrate valley slot 111 to selectively disassemble the peripheral retaining ring 11 2 as required by the process. Referring to FIG. 2, a substrate 120 is mounted in the substrate valley 111 of the lower template 11A. A plurality of wafers 121 are disposed on the substrate 120. In this embodiment, the substrate 12 is further provided with a plurality of fresh wires 122' to electrically connect the wafers 12 to the substrate. In detail, the substrate 120 can be a special-purpose printed circuit board (PCB) for providing electrical connection and as a component of the wafer in the semiconductor package structure, such as a memory card substrate or a BGA (ball) Grid array) package carrier board. The wafers 121 are semiconductor elements in which an integrated circuit (Ic) has been formed, such as a memory, a logic element, and an application specific integrated circuit (ASIC), which are divided by a wafer. Into a number of granular wafers. The wafers 112 may also be in a stacked form (not shown in the drawings but not exceeding the upper surface of the peripheral ring 112. Preferably, a release film 1 70 may be pre-laid in the substrate receiving groove 1U. The mold encapsulant formed by curing the granular resin can be easily detached from the lower die plate 110. In detail, the release film 170 isolates the substrate 12 from the substrate receiving groove u. The film 170 can be further attached to the inner wall U3 of the peripheral retaining ring 112. Referring to Fig. 3, the granular resin 130 is formed by a nozzle spray method in the form of a nozzle spray 201140704 (powder spraying). The substrate accommodating groove 111 is such that the granular resin 130 covers the substrate 120 and the wafers 121. The granular resin 130 has a particle size ranging from 毫米1 mm (mm) to 0.5 mm (mm). The composition includes a thermosetting resin, a helium oxygen filling agent, a curing accelerator, etc., which can be pre-stored in a storage tank and then led out by the nozzle 132. In addition, the nozzle 丨32 can be reciprocating S-shaped. The method moves above the substrate accommodating groove ill, and simultaneously sprays the granular resin 1 3 0 so that The granular resin 1 3 〇 can be dispersed on the base β plate 120. Referring to FIG. 4, 'the influence of the movement path of the nozzle 132' is distributed to the substrate 120 after the spray is completed. There may be a problem of height difference, which is not uniformly dispersed in the substrate 120. Here, a flat platen 14 is provided, and the leveling plate 140 is aligned with the substrate of the lower plate 11 The groove is closed. Then, a flat surface 141 of the flattening plate 14 is lowered toward the granular resin 130 by a downward force. In the embodiment, the flat plate 140 is pressed. The size of the substrate receiving groove U1 is not greater than that of the substrate receiving groove U1, so that the leveling platen 140 can be recessed downwardly into the substrate receiving groove 。. Please refer to FIG. 5, by the flattening platen 14 〇 downward The flattening platen 130' is flattened in the substrate receiving groove m so that the granular resin 130 has a uniform flattening upper surface 131 (as shown in Fig. 6). The upper surface 131 is still the surface of the powder. It is important to note that during the flattening step, the leveling The flattening force of the plate 14〇 and the temperature at the flattening do not cause the granular resin crucible 30 to flow into the molten liquid 201140704. In a preferred embodiment, the step of flattening the granular resin 130 can be carried out at room temperature. Therefore, the melting temperature of the granular resin 130 has not yet been reached in this step, so that the granular resin can be kept in a solid granular form. Referring to Fig. 6, the flattening platen 14 is removed. Further, away from the lower template 110, the upper surface i3i of the granular resin 丨3 显 is exposed in the substrate accommodating groove 111. At this time, the granular resin 13 is uniformly dispersed in the gap between the substrate 1 2 and the wafers 1 2 1 and covers the wafers 121 and the bonding wires 122. Referring to FIG. 7, the lower template 11 is moved into a baking oven 150, and the granular resin 130 is heated in a horizontal state without pressing and covering the substrate receiving groove, so that the granular material is heated. The resin 13 is solidified into a mold encapsulant 160. Please refer to the figure 6 as shown in the figure. Since the granular resin 130 has been in a relatively loose and uniform state after the flattening step of the flattening platen 14, the granular resin 1 3 after heating. 〇# There is no doubt that there is excessive flow, so as to form the molding compound 1 60 ' stably and completely without overflowing, and it will not stick to the side of the conventional mold. In addition, there is no need to conventionally cover and apply pressure on the upper mold, so that the granular resin 130 is discharged from the interstitial air of the granular resin 130 during melting to solidification. ® This invention provides a packaging method similar to compression molding without compression of the upper and lower molds. 'Pre-leveling the granular resin before baking to improve the uniformity of the granular wax, preventing the granularity in advance. The flow of the resin 'achieves the effect of zero-glue and low-flow in the baking process, and can solve the process problems caused by the flow of the granular resin in the compression molding, such as wire sweep and surface void (2011) Surface v〇id), the problem of overflowing the rubber on the side edge of the upper mold, in order to improve the appearance of the product, and thus improve the production yield. In addition, the method of the present invention has the effect of being more environmentally friendly, more economical and easy to vent than the conventional compression molding technique. The above description is only a preferred embodiment of the present invention, and is not intended to be
發明作任何形式上的限制，雖然本發明已以較佳實施例 揭露如上，然而並非用以限定本發明，任何熟悉本項技 術者，在残離本發明之技術範圍内，所作的任何簡單 修改、等效性變化與修飾，均仍屬於本發明的技術範圍 内。 【圖式簡單說明】The invention is not limited to the above-described embodiments, but is not intended to limit the present invention, and any simple modifications made by those skilled in the art within the technical scope of the present invention may be made. Equivalent changes and modifications are still within the technical scope of the present invention. [Simple description of the map]
第1圖：依據本發明 之模封方法 圖。 之一具體實施例之一種半導體晶片 ’下模板提供步驟之元件截面示意 依據本發明之一具體實施例之一種半導體晶片 之模封方法，基板裝載步驟之元件截面示意圖。 3圖.依據本發明之_具體實施例之—種半導體晶片 .之模封方法，粉體喷灑步驟之元件截面示意圖。 4圖·依據本發明之一具體實施例之一種半導體晶片 之模Ί+ 士 河万法’粒狀樹脂壓平步驟開始前之.元件 截面示意圖。 第5圖·依據本發明之—具體實施例之—種半導體晶片 10 201140704 之模封方法，粒狀樹脂壓平步驟之元件截面示 意圖。 第6圖：依據本發明之一具體實施例之一種半導體晶片 之模封方法，整平壓板移除步驟之元件截面示 意圖。 第7圖：依據本發明之一具體實施例之一種半導體晶片 之模封方法，烘烤步驟之元件截面示意圖。 【主要元件符號說明】Fig. 1 is a view showing a molding method according to the present invention. BRIEF DESCRIPTION OF THE DRAWINGS A semiconductor wafer of a specific embodiment of the present invention provides a cross-sectional view of a semiconductor wafer in accordance with an embodiment of the present invention. 3 is a cross-sectional view showing the components of a semiconductor wafer according to a specific embodiment of the present invention. 4 is a cross-sectional view of a component of a semiconductor wafer according to an embodiment of the present invention before the start of the step of pressing the granule resin. Fig. 5 is a cross-sectional view showing the element of a granular resin flattening step in accordance with a molding method of a semiconductor wafer 10 201140704 of the present invention. Figure 6 is a cross-sectional view showing the element sealing method of a semiconductor wafer in accordance with an embodiment of the present invention. Figure 7 is a cross-sectional view showing the element of a baking method of a semiconductor wafer in accordance with an embodiment of the present invention. [Main component symbol description]
110下模板 111 基板容置槽 112周 120基板 121晶 1 3 0粒狀樹脂 13 1 上 140整平壓板 141 整 150烘烤爐 160模 緣擋環 113 内壁 片 122 銲線 表面 132 喷嘴 平面 封膠體 170 離形薄膜110 lower template 111 substrate accommodating groove 112 circumference 120 substrate 121 crystal 1 3 0 granular resin 13 1 upper 140 leveling plate 141 150 baking oven 160 die ring ring 113 inner wall piece 122 wire surface 132 nozzle flat sealant 170 release film
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