TW201133717A - Processing method of wafer for optical devices - Google Patents

Processing method of wafer for optical devices Download PDF

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Publication number
TW201133717A
TW201133717A TW100104585A TW100104585A TW201133717A TW 201133717 A TW201133717 A TW 201133717A TW 100104585 A TW100104585 A TW 100104585A TW 100104585 A TW100104585 A TW 100104585A TW 201133717 A TW201133717 A TW 201133717A
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optical device
wafer
laser
device wafer
cutting
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TW100104585A
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Chinese (zh)
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TWI509743B (en
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Hitoshi Hoshino
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Disco Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
    • B26D3/06—Grooving involving removal of material from the surface of the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Forests & Forestry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Abstract

The topic of the present invention is to provide a processing method of wafer for optical devices to cut a wafer into plural optical devices without degrading the quality of the optical devices. The processing method of wafer for optical devices of the present invention is to laminate the optical device layers on the substrate surface and to cut the wafer for optical devices which has optical devices in plural regions divided by plural grid-like cutting channels along the cutting channels into plural optical devices. The method comprises a laser-processed groove formation step, a transformed material removal step, and a wafer cleavage step. The laser-processed groove formation step irradiates laser beam with the absorptive wavelength along the cutting channel at the substrate of wafer for optical devices, so as to form the laser-processed groove on the surface or the back side of the substrate as the cleavage reference point. The transformed material removal step disposes the cutting blade having the diamond polishing particles as the main components in the laser-processed groove of the substrate and rotates the cutting blade while moving relatively along the wall surface of the laser-processed groove, such that the transformed material formed during the generation of the laser-processed groove is removed, and at the same time the wall surface of the laser-processed groove is processed into a rough surface. The wafer cleavage step imposes an external force on the wafer for optical devices, so as to cleave the wafer for optical devices along the processed groove in which the transformed material has been removed, thereby cutting the wafer into plural optical devices.

Description

201133717 六、發明說明： 【發明所屬之技彳衧領城】 發明領域 本發明係有關於一種光學裝置晶圓之加工方法，該光 學裝置晶圓之加工方法係將於基板表面層疊光學裝置層， 並於以形成格子狀之複數個切割道所劃分之複數個區域形 成有光學裝置之光學裝置晶圓沿著切割道分割成諸個光學 裝置者。 L·. ί 發明背景 在光學裝置製造步驟中，於略圓板形狀之藍寶石基板 或碳化矽基板之表面層疊由氮化鉀系化合物半導體構成之 光學裝置層’並於以形成格子狀之複數個㈣道劃分之複 數個區域形成發光二極體、雷射二極體等光學裝置，而構 成光學裝置晶®。㈣’藉將光學裝置晶圓沿著切割道切 斷’分割形成有光料置之區域，製造了諸個光學裝置Q 上述沿著光學裝置晶圓之切割道之切斷通常以稱為切 割機之切削裝置進行。此切削裝置具備保持被加工物之吸 盤台、用輯龍持在該吸盤台之被加卫物之切削機構、 使吸盤台與切職構相對地移動之㈣，丨進給機構。切削機 構具有旋轉心軸、裝設於該心敵㈣丨刀片及使旋轉心轴 旋轉驅動之驅動設備。切削刀片由圓盤狀基台及裝設在該 基口:_外周部之環狀切刀構成’切刀係以電鑄將粒徑 3㈣左右之鑽石研麵岐於基台，卿成厚度脚爪左右。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of processing an optical device wafer, which is to laminate an optical device layer on a surface of a substrate. And the optical device wafer in which the optical device is formed in a plurality of regions divided by a plurality of dicing streets formed in a lattice shape is divided into optical devices along the scribe line. BACKGROUND OF THE INVENTION In the optical device manufacturing step, an optical device layer composed of a potassium nitride-based compound semiconductor is laminated on the surface of a substantially circular plate-shaped sapphire substrate or a tantalum carbide substrate to form a plurality of lattices. (4) The plurality of regions divided by the road form an optical device such as a light-emitting diode or a laser diode, and constitute an optical device crystal®. (d) "By cutting the optical device wafer along the scribe line" to form a region where the light is placed, and manufacturing the optical devices Q. The cutting along the scribe line of the optical device wafer is generally referred to as a cutting machine. The cutting device is carried out. The cutting device includes a suction table for holding a workpiece, a cutting mechanism for holding the object to be held by the suction table, and a (4) feed mechanism for moving the suction table and the cutting mechanism relatively. The cutting mechanism has a rotating mandrel, a driving device mounted on the enemies (four) boring blades, and a rotating mandrel. The cutting insert consists of a disc-shaped abutment and an annular cutter mounted on the base: _ outer peripheral portion. The cutter is electroformed to cast a diamond grinding surface of about 3 (four) in diameter to the base. about.

S 3 201133717 如此，由於構成光學裝置晶圓之藍寶石基板、碳化矽 基板等莫氏硬度高，故以上述切削刀片所行之切斷未必容 易。因而，由於無法使切削刀片之切入量增大，而施行複數 次切削步驟，來切斷光學裝置晶圓，故有生產性差之問題。 為解決上述問題，將光學裝置晶圓沿著切割道分割之 方法已提出一種方法，該方法係藉沿著切割道照射對晶圓 具吸收性之波長之脈衝雷射光線，形成作為斷開之起點之 雷射加工溝，並藉沿著形成有作為此斷開之起點之雷射加 工溝的切割道賦與外力，而割斷者。（參照專利文獻1。） 先行技術文獻 專利文獻 專利文獻1 日本專利公開公報平10-305420號 【發明内容】 發明概要 發明欲解決之課題 然而，當沿著形成於構成光學裝置晶圓之藍寶石基板 表面之切割道，照射對藍寶石基板具吸收性之波長之雷射 光線，以形成雷射加工溝時，於雷射加工時生成之變質物 質附著於發光二極體等光學裝置之側壁面，光學裝置之亮 度降低，而有光學裝置之品質降低之問題。 本發明即係鑑於上述事實而發明者，其主要技術課題 在於提供一種在不使光學裝置之品質降低下，可分割成諸 個光學裝置之光學裝置晶圓之加工方法。 用以欲解決課題之手段 201133717 為解決上述主要技術課題，根據本發明，提供一種光 學裝置晶圓之加工方法，該光學裝置晶圓之加工方法係將 於基板表面層疊光學裝置層、並於以形成格子狀之複數個 切割道所劃分之複數個區域形成有光學裝置之光學裝置晶 圓，沿著切割道分割成諸個光學裝置者，其特徵在於具有 雷射加工溝形成步驟、變質物質去除步驟及晶圓分割步 驟，該雷射加工溝形成步驟係沿著切割道對光學裝置晶圓 之基板照射具吸收性之波長之雷射光線，以於基板之表面 或背面形成作為斷開基點之雷射加工溝者；該變質物質去 除步驟係將以鑽石研磨粒為主成份之切削刀片置於形成在 基板之雷射加工溝，將該切削刀片一面旋轉，一面邊循著 雷射加工溝之壁面、邊相對移動，藉此，可去除於形成雷 射加工溝時生成之變質物質，同時，將雷射加工溝之壁面 加工成粗面者；該晶圓分割步驟係對光學裝置晶圓賦與外 力，以將光學裝置晶圓沿著已去除變質物質之加工溝斷 開，而分割成諸個光學裝置者。 上述雷射加工溝形成步驟從基板之背面側沿著切割道 照射雷射光線，以於基板之背面形成雷射加工溝。 又，宜施行光學裝置層分離步驟，該光學裝置層分離 步驟係使用以鑽石研磨粒為主成份之切削刀片，將於基板 之背面形成有雷射加工溝之光學裝置晶圓之光學裝置層沿 著切割道切削，以將光學裝置層沿著切割道分離者。 發明效果 由於在本發明之光學裝置晶圓之加工方法中，施行變S 3 201133717 Thus, since the Mohs substrate and the tantalum carbide substrate constituting the optical device wafer have a high Mohs hardness, the cutting by the above-described cutting insert is not necessarily easy. Therefore, since the cutting amount of the cutting insert cannot be increased, and the plurality of cutting steps are performed to cut the optical device wafer, there is a problem that productivity is poor. In order to solve the above problems, a method of dividing an optical device wafer along a dicing street has been proposed, which is formed by pulsing a laser beam of a wavelength that absorbs light to the wafer along a scribe line. The laser processing groove of the starting point is cut by the cutting force along the cutting path forming the laser processing groove which is the starting point of the breaking. (Patent Document 1). PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1 Japanese Patent Publication No. Hei 10-305420 SUMMARY OF INVENTION Technical Problem However, the problem is to be solved along a sapphire substrate formed on a wafer constituting an optical device. The dicing surface of the surface illuminates the laser beam having an absorptive wavelength to the sapphire substrate to form a laser processing groove, and the metamorphic substance generated during the laser processing adheres to the side wall surface of the optical device such as the light emitting diode, and the optical The brightness of the device is reduced, and the quality of the optical device is degraded. The present invention has been made in view of the above circumstances, and a main technical object thereof is to provide a method of processing an optical device wafer which can be divided into optical devices without degrading the quality of the optical device. Means for Solving the Problem 201133717 In order to solve the above-mentioned main technical problems, according to the present invention, a method for processing an optical device wafer is disclosed. The optical device wafer processing method is to laminate an optical device layer on the surface of the substrate, and a plurality of regions in which a plurality of dicing streets are formed in a lattice shape form an optical device wafer of an optical device, and are divided into optical devices along the dicing street, and are characterized in that the laser processing groove forming step and the deterioration substance removal are performed. a step of forming a laser processing groove, the step of forming a laser beam having an absorptive wavelength on the substrate of the optical device wafer along the scribe line to form a grounding point on the surface or the back surface of the substrate The laser processing groove is arranged in the laser processing groove formed by the diamond grinding blade as a main component, and the cutting blade rotates on one side while following the laser processing groove. The wall and the side move relative to each other, thereby removing the metamorphic substance generated when the laser processing groove is formed, and at the same time, the mine The wall of the processing groove is processed into a rough surface; the wafer dividing step is to apply an external force to the optical device wafer to break the optical device wafer along the processing groove of the removed metamorphic material, and divide into optical devices. By. The laser processing groove forming step irradiates the laser beam from the back side of the substrate along the dicing street to form a laser processing groove on the back surface of the substrate. In addition, an optical device layer separation step is preferably performed. The optical device layer separation step uses a cutting blade mainly composed of diamond abrasive grains, and an optical device layer along which an optical device wafer of a laser processing groove is formed on the back surface of the substrate Cutting the cutting path to separate the optical device layer along the cutting path. Effect of the Invention In the processing method of the optical device wafer of the present invention, the implementation is changed

S 5 201133717 質物質去除步驟，該變質物質去除步驟係將以鑽石研磨粒 為主成份之切削刀片置於經施行雷射加工溝形成步驟形成 於光學裝置之基板的雷射加工溝，將切削刀片一面旋轉， 一面邊循著雷射加工溝之壁面，邊相對移動，藉此，去除 於形成雷射加工溝時生成之變質物質，同時，將雷射加工 溝之壁面加工成粗面者，故分割成諸個之光學裝置除了可 去除基板之側壁面吸收光，而導致亮度降低之變質物質 外，還加工成粗面，故可有效地釋放光，亮度可提高。 圖式簡單說明 第1(a)圖、第1(b)圖係顯示依據本發明光學裝置晶圓之 加工方法加工之光學裝置晶圓的立體圖及主要部份放大截 面圖。 第2(a)圖、第2(b)圖係本發明光學裝置晶圓之加工方法 之保護構件貼附步驟的說明圖。 第3圖係用以施行本發明光學裝置晶圓之加工方法之 雷射加工溝形成步驟之雷射加工裝置的主要部份立體圖。 第4(a)圖〜第4(c)圖係本發明光學裝置晶圓之加工方法 之雷射加工溝形成步驟的說明圖。 第5圖係用以施行本發明光學裝置晶圓之加工方法之 變質物質去除步驟之切削裝置的主要部份立體圖。 第6(a)圖〜第6(c)圖係本發明光學裝置晶圓之加工方法 之變質物質去除步驟的說明圖。 第7(a)圖、第7(b)圖係本發明光學裝置晶圓之加工方法 之晶圓支撐步驟的說明圖。 201133717 第8圖係本發明光學裝置晶圓之加工方法之光學裝置 層分離步驟的說明圖。 第9(a)圖〜第9(c)圖係本發明光學裝置晶圓之加工方法 之光學裝置層分離步驟的說明圖。 第10圖係用以施行本發明光學裝置晶圓之加工方法之 晶圓分割步驟的膠帶擴張裝置之立體圖。 第11 (a)圖〜第11 (c)圖係本發明光學裝置晶圓之加工方 法之晶圓分割步驟的說明圖。 【實施方式】 用以實施發明之形態 以下，就本發明之光學裝置晶圓之加工方法的較佳實 施形態，參照附加圖式，詳細說明。 於第1(a)圖及第1(b)圖顯示依據本發明光學裝置晶圓 之加工方法加工之光學裝置晶圓的立體圖及將主要部份放 大而顯示之截面圖。第1(a)圖及第1(b)圖所示之光學裝置晶 圓2係於厚度100# m之藍寶石基板20之表面20a以5# m之 厚度層疊由氮化物半導體構成，作為光學裝置層之發光層 (磊晶層）21。又，於發光層（磊晶層）21以形成格子狀之複數 個切割道22劃分之複數個區域形成有發光二極體、雷射二 極體等光學裝置23。以下，就將此光學裝置晶圓2沿著切割 道22分割成諸個光學裝置23之加工方法作說明。 首先，為保護形成於構成光學裝置晶圓2之藍寶石基板 20之表面20a的光學裝置23，而施行將保護構件貼附於光學 裝置晶圓2之表面2a之保護構件貼附步驟。即，如第2圖所 S. 7 201133717 示，將作為保護構件之保護膠帶3貼附於光學裝置晶圓2之 表面2a。此外，保護膠帶3在圖中所示之實施形態中，於厚 度100 之由聚氯乙烯(PVC)構成之片基材表面塗佈有厚 度5 g m之丙稀酸樹脂糸聚糊。 當藉施行上述保護構件貼附步驟，將保護膠帶3貼附於 光學裝置晶圓2之表面2a後，施行雷射加工溝形成步驟，該 雷射加工溝形成步驟係沿著切割道照射對光學裝置晶圓之 基板具吸收性之波長的雷射光線’以形成作為斷開基點之 雷射加工溝者。此雷射加工溝形成步驟係使用第3圖所示之 雷射加工裝置4來施行。第3圖所示之雷射加工裝置4具備保 持被加工物之吸盤台41、對保持在該吸盤台41之被加工物 照射雷射光線之雷射光線照射機構42、拍攝保持在吸盤台 41上之被加工物之拍攝機構43。吸盤台41構造成吸引保持 被加工物’並可以圖中未示之加工進給機構，使其於第3圖 以箭號X所示之加工進給方向移動，並且，以圖中未示之分 度進給機構使其於第3圖箭號Y所示之分度進給方向移動。 上述雷射光線照射機構42具有實質上配置成水平之圓 筒形殼體421。於殼體421内配設有具有圖中未示之脈衝雷 射光線振盪器及重複頻率設定機構之脈衝雷射光線振盪機 構。於上述殼體421之前端部裝設有用以將從脈衝雷射光線 振盪機構振盪之脈衝雷射光線聚光的聚光器422。此外，雷 射光線照射機構42具有用以調整以聚光器422聚光之脈衝 雷射光線之聚光點位置的聚光點位置調整機構（圖中未示）。 裝設在構成上述雷射光線照射機構42之殼體421之前 201133717 端部的拍攝機構具有照明被加工物之照明機構、捕捉以該 照明機構照明之區域之光學系統、拍攝以該光學系統捕捉 之像之拍攝元件(CCD)等’並將所拍攝之圖像信號傳送至圖 中未示之控制機構。 就下述雷射加工溝形成步驟，參照第3圖及第4圖來說 明，前述雷射加工溝形成步驟係使用上述雷射加工裝置4， 沿著切割道照射對構成上述光學裝置晶圓2之藍寶石基板 20具吸收性之波長之雷射光線，以形成作為斷開基點之雷 射加工溝者。 首先，將貼附在光學裝置晶圓2表面之保護膠帶3側載 置於上述第3圖所不之雷射加工裝置4之吸盤台41上。然 後，藉將圖中未示之吸引機構作動，以保護膠帶3為中介將 光學裝置晶圓2保持於吸盤台41上（晶圓保持步驟）。因而， 保持在吸盤台41之光學裝置晶圓以藍寶石基⑽之背面篇 為上側。如此進行而吸引簡有光學裝置晶_之吸盤台41 以圖中未*之加卫進給機構置於拍攝機齡之正下方。 當吸盤台41置於拍攝機構43之正下方時，以拍攝機構 =及圖中未示之控制機構執行檢㈣料置晶圓2之要雷 加卫區域的校準作業1，拍攝機構侃圖中未 ^ =制機構執洲以進行形成於光學裝置晶圓2之預定 昭射^料22與沿著_勒料雷料線之雷射光線 光器422之對位的圖形匹配等圖像處理，而 置晶圓2’形成於與上迷預定方向垂直相交之方向2 201133717 剔運22也同樣地完成執行雷射光線照射位置之校準。此時， 光學裝置晶圓2之形成有切割道2 2之發光層（蟲晶層切之表 面位於下側，而由於構成光學裝置晶圓2之藍寶石基板2〇為 透明體，故可從藍寶石基板2〇之背面勘側拍攝切割道& 當如以上進行，檢測形成於構成保持在吸盤台41上之 光學裝置晶圓2之發光層（蠢晶層）21表面之切割道22，進行 雷射光線騎位置之校準後，如第4⑷圖所示，將吸盤台41 移動至雷射光線照射機構4 2之聚光器422所在之雷射光線 照射區域’將預定之切割道22之—端(在第4⑷圖為左端）置 於雷射光線照射機構42之聚光器422之正下方。然後，將從 聚光器422照射之脈衝雷射光線之聚光點p對準構成光學裝 置晶圓2之藍寶石基板2〇之背面2〇b(上面）。接著，—面從聚 光器422照射對藍寶石基板20具吸收性之波長之脈衝雷射 光線，一面使吸盤台41於第4(a)圖中以箭號X1所示之方向 以預定加工進給速度移動。然後，如第4(b)圖所示，當雷射 光線照射機構42之聚光器422之照射位置到達切割道22之 另^ (在第4(b)圖為右端）的位置後，停止脈衝雷射光線之 照射，同時，停止吸盤台41之移動。結果，如第4(b)圖及第 4(c)圖所示，沿著切割道22形成連續之雷射加工溝2〇1(雷射 加工溝形成步驟）。此外，如第4(c)圖所示，於雷射加工溝 201之壁面附著有於形成上述雷射加工溝時生成之變質物 質 202。 上述雷射加工溝形成步驟之加工條件如不設定。 光源 ：半導體激發固體雷射(Nd : YAG) 10 201133717 波長 :355nm 脈衝能量 35μ] 脈衝寬度 :180ns 重複頻率 :100kHz 聚光點徑 :60mm/秒 加工進給速度 溝深度 :15 // m 當如以上進行，沿著於光學裝置晶圓2之預定方向延伸 之所有切割道22，施行上述雷射加工溝形成步驟後，使吸 盤台41旋動90度，沿著形成於相對於上述預定方向垂直相 交之方向之各切割道22，執行上述雷射加工溝形成步驟。 當施行上述雷射加工溝形成步驟後，施行變質物質去 除步驟，該變質物質去除步驟係將以鑽石研磨粒為主成份 之切削刀片置於形成在基板之雷射加工溝，將切削刀片一 面旋轉，一面邊循著雷射加工溝之壁面，邊相對移動，藉 此，去除於形成雷射加工溝時所生成之變質物質，同時， 將雷射加工溝之壁面加工成粗面者。此變質物質去除步驟 在圖中所示之實施形態中，使用第5圖所示之切削裝置5來 施行。第5圖所示之切削裝置5具備保持被加工物之吸盤台 51、切削保持在該吸盤台51之被加工物之切削機構52、拍 攝保持在該吸盤台51之被加工物之拍攝機構53。吸盤台51 構造成吸引保持被加工物，並可以圖中未示之切削進給機 構使其於第5圖以箭號X所示之切削進給方向移動，並且， 以圖中未示之分度進給機構使其於以箭號Y所示之分度進 11 201133717 給方向移動。 上述切削機構52具有實質上配置成水平之心轴殼 521、旋轴自如地支撐於該心軸殼521之旋轉心轴522、裝設 在該旋轉心軸522之前端部之切削刀片523，旋轉心軸522可 以配设於心軸殼521内之圖中未示之伺服馬達，於箭號523a 所示之方向旋轉。此外，切削刀片523在圖中所示之實施形 怨中’由以鍍鎳集結了粒徑m之鑽石研磨粒之電鑄刀片 構成，厚度形成20"m。上述拍攝機構53具有照明被加工物 之照明機構、捕捉以該照明機構照明之區域之光學系統、 拍攝以該光學系統所捕捉之像之拍攝元件（c c D)等並將所 拍攝之圖像信號傳送至圖中未示之控制機構。 要使用上述切削裝置5，施行變質物質去除步驟，如第 5圖所示，將貼附在已施行上述雷射加工剌成步驟之光學 裝置晶圓2表面之保護膠帶3側載置於吸盤台”上。然後， 錯將圖中未示之吸引機構作動，以保_帶3為+介，將光 學裝置晶圓2保持於吸盤台51上（晶圓保持步驟）。因而，保 t在吸盤台Μ之光學裝置晶圓2以藍f石基板2G之背面施 上:如此進仃，吸引保持有光學裝置晶圓2之吸盤台51 以财未示之切削進給機構置於拍攝機構W之正下方。 53及二!台51置於拍攝機構53之正下方時，以拍攝機構 B及圖:未示之控制機構執行檢測光學裝置晶圓2之要加 =二成=準作業，拍攝機構53及圖中未示之控制 =:=以進行於構成光學裝置晶圓2之藍寶石基 板2〇^面鳥形成⑽定方向的雷射加工溝训與切削刀 12 201133717 片523之對位的校準(校準步驟）。又，對在構成光學裝置晶 圓2之藍寶石基板20之背面施形成於相對於上述預定方向 垂直相交之方向的雷射加卫溝2G1也同樣地完成執行加工 區域之校準。 當如以上進行’檢測保持在吸盤扣上之絲裝置晶 圓2之加工區域之校準後，將吸引保持有光學裝置晶⑽之 吸盤台5i移動至為切削刀片523下方之加工區域的加工開 始位置。紐’如第6⑷圖所示，定位成光學裝置晶圓2之 要加工之雷射加工溝20!之-端(在第6⑻圖為左端)位於自 切削刀片523之正下方右移預定量之側（加工進給開始位置 定位步驟）。當如此進行’光學裝置晶圓2置於加工區域之 加工開始位置後，-面將切削刀片523於以箭號现顯示之 方向旋轉，-面從在第6(a)圖中以2點鏈線所示之待機位置 切入進給至下方，而如第6⑷圖實線所示，置於預定切入進 給位置。此切入進給位置設定在切削刀片523之外周緣之下 端從構成光學裝置晶圓2之藍寶石基板2〇之背面2〇b(上面） 低20// m之位置。 接著，如第6(a)圖所不，一面將切削刀片523於箭號523a 所不之方向旋轉，一面以預定旋轉速度（例如2〇〇〇〇rpm)旋 轉，而將吸盤台51、即光學裝置晶圓2於第6(a)圖以箭號乂1 所示之方向以預定加工進給速度加工進給（變質物質去除 步驟）。在此變質物質去除步驟中，切削刀片523—面循著 雷射加工溝201，一面相對移動。結果，由於切削刀片523 之厚度（20 // m)設定成較雷射加工溝2〇ι(以聚光點徑為 S. 13 201133717 之脈衝雷射光線形成）之寬度厚，故如上述第6(c)圖 所示，可去除附著於雷射加工溝201之壁面之變質物質 202，同時，如第6(c)圖所示，形成壁面加工成粗面之加工 溝203。在此變質物質去除步驟中，由於切削刀片523—面 循著附著於雷射加工溝201之壁面之變質物質202，一面加 工，故可易去除變質物質202,同時，可易將雷射加工溝201 之壁面形成粗面。此外，當吸盤台51、即光學裝置晶圓2之 另一端（在第6(b)圖為右端）到達至從切削刀片523之正下方 左移預定量之位置後，停止吸盤台51之移動。然後，使切 削刀片523上升，而置於以2點鏈線所示之退避位置。 上述變質物質去除步驟之加工條件如下設定。 切削刀片 ：厚度20# m之鑽石研磨粒之電鑄刀片 切入深度 ：20 // m 加工進給速度 ：60mm/秒 當如以上進行，沿著於光學裝置晶圓2之預定方向延伸 之所有切割道22施行上述變質物質去除步驟後，使吸盤台 51旋動90度，沿著形成於相對於上述預定方向垂直相交之 方向之各雷射加工溝201，施行上述變質物質去除步驟。 當如上述施行變質物質去除步驟後，施行晶圓支撐步 驟，該晶圓支撐步驟係將構成光學裝置晶圓2之藍寶石基板 20之背面20b貼附於裝設在環狀框架之切割膠帶表面，並 且，將貼附於光學裝置晶圓2表面之保護構件剝離者。即， 如第7(a)圖及第7(b)圖所示，於外周部裝設成覆蓋環狀框架 6之内側開口部之切割膠帶7表面貼附構成光學裝置晶圓2 14 201133717 之藍寶石基板2〇的背面2〇b。然後，將貼附於光學裝置晶圓 2之表面2a之保護膠帶3剝離。 接著，施行光學裝置層分離步驟，該光學裝置層分離 步驟係將層疊形成於構成光學裝置晶圓2之藍寶石基板20 之表面2〇a’作為光學裝置層之發光層（磊晶層）21沿著切割 道22分離者。此光學裝置層分離步驟可使用上述第5圖所示 之切削裝置5來施行。 要使用上述切削裝置5，施行光學裝置層分離步驟，係 如第8圖所示，將貼附有構成光學裝置晶圓2之藍寶石基板 2〇之背面20b之切削膠帶7側載置於吸盤台51上，將圖中未 示之吸引機構作動，而將光學裝置晶圓2吸引保持於吸盤台 51上（曰曰圓保持步驟）。因而，保持在吸盤台Η上之光學裝置 晶圓2以表面2a為上側。此外，在第8圖中，省略顯示裝設 有切割膠帶7之環狀框架6 ’環狀框架6以配設於吸盤台51之 夾设備固定。如此進行，吸引保持有光學裝置晶圓2之吸盤台 51以圖中未示之切削進給機構，置於拍攝機構兄之正下方。 當吸盤台51置於拍攝機構53之正下方時，以拍攝機構 5 3及圖中未示之控制機構執行檢測光學裝置晶圓2之要加 工之區域的校準作業。即，拍攝機構53及圖中未示之控制 機構完成執行用以進行於構成光學裝置晶圓2之表面以形 成於預定方向的切割道22與切削刀片523之對位的校準（校 準步驟）。又，對於構成光學裝置晶圓2之表面2&形成於相 對於上述預定方向垂直相交之切割璋22也同樣地完成執行 加工區域之校準。S 5 201133717 a substance removing step, wherein the cutting blade having the diamond abrasive particles as a main component is placed in a laser processing groove formed on the substrate of the optical device by performing a laser processing groove forming step, and the cutting blade is cut While rotating, one side follows the wall surface of the laser processing groove and moves relative to each other, thereby removing the metamorphic substance generated when the laser processing groove is formed, and at the same time, processing the wall surface of the laser processing groove into a rough surface, The optical device that is divided into the optical devices can remove the light from the side wall surface of the substrate, and the processed material can be processed into a rough surface, so that the light can be efficiently released and the brightness can be improved. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(a) and Fig. 1(b) are a perspective view and an enlarged partial cross-sectional view showing an optical device wafer processed in accordance with the method of processing an optical device wafer of the present invention. Figs. 2(a) and 2(b) are explanatory views of a protective member attaching step of the method for processing an optical device wafer of the present invention. Fig. 3 is a perspective view showing the main part of a laser processing apparatus for performing a laser processing groove forming step of the optical device wafer processing method of the present invention. 4(a) to 4(c) are explanatory views of a laser processing groove forming step of the method for processing an optical device wafer of the present invention. Fig. 5 is a perspective view showing a main part of a cutting device for performing a modifying substance removing step of the method for processing an optical device wafer of the present invention. Fig. 6(a) to Fig. 6(c) are explanatory views of the process of removing the deteriorated substance in the method of processing the optical device wafer of the present invention. Figs. 7(a) and 7(b) are explanatory views of a wafer supporting step of the method for processing an optical device wafer of the present invention. 201133717 Fig. 8 is an explanatory view showing an optical device layer separation step of the optical device wafer processing method of the present invention. 9(a) to 9(c) are explanatory views of the optical device layer separation step of the optical device wafer processing method of the present invention. Fig. 10 is a perspective view of a tape expanding device for performing a wafer dividing step of the method for processing an optical device wafer of the present invention. 11(a) to 11(c) are explanatory views of a wafer dividing step of the method for processing an optical device wafer of the present invention. [Embodiment] Embodiments for carrying out the invention Hereinafter, preferred embodiments of the method for processing an optical device wafer according to the present invention will be described in detail with reference to the accompanying drawings. Figs. 1(a) and 1(b) are perspective views showing a wafer of an optical device processed by the method for processing an optical device wafer according to the present invention, and a cross-sectional view showing the main portion enlarged. The optical device wafer 2 shown in the first (a) and the first (b) is laminated on the surface 20a of the sapphire substrate 20 having a thickness of 100 # m by a thickness of 5 mm, and is formed of a nitride semiconductor as an optical device. A light-emitting layer (epitaxial layer) 21 of the layer. Further, an optical device 23 such as a light-emitting diode or a laser diode is formed in a plurality of regions defined by a plurality of dicing streets 22 which are formed in a lattice shape in the light-emitting layer (epitaxial layer) 21. Hereinafter, a description will be given of a processing method in which the optical device wafer 2 is divided into the optical devices 23 along the dicing street 22. First, in order to protect the optical device 23 formed on the surface 20a of the sapphire substrate 20 constituting the optical device wafer 2, a protective member attaching step of attaching the protective member to the surface 2a of the optical device wafer 2 is performed. That is, as shown in Fig. 2, S. 7, 201133717, the protective tape 3 as a protective member is attached to the surface 2a of the optical device wafer 2. Further, in the embodiment shown in the figure, the protective tape 3 is coated with a 500 g thick acrylic resin enamel paste on the surface of a sheet substrate made of polyvinyl chloride (PVC) having a thickness of 100. After the protective member attaching step is performed, the protective tape 3 is attached to the surface 2a of the optical device wafer 2, and a laser processing groove forming step is performed along the cutting path to illuminate the optical The substrate of the device wafer has an absorptive wavelength of laser light 'to form a laser processing trench as a break point. This laser processing groove forming step is carried out using the laser processing apparatus 4 shown in Fig. 3. The laser processing apparatus 4 shown in Fig. 3 includes a chuck table 41 for holding a workpiece, a laser beam irradiation unit 42 for irradiating a laser beam to the workpiece held by the chuck table 41, and a lens holder 41 for photographing and holding. The photographing mechanism 43 of the workpiece to be processed. The suction cup table 41 is configured to attract the workpiece to be processed and can be moved by the processing feed mechanism (not shown) in the processing feed direction indicated by the arrow X in FIG. 3, and is not shown in the drawing. The indexing feed mechanism moves in the indexing feed direction indicated by the arrow Y in Fig. 3. The above-described laser beam irradiation mechanism 42 has a cylindrical casing 421 which is substantially horizontally arranged. A pulsed laser ray oscillating mechanism having a pulsed laser ray oscillator and a repetition frequency setting mechanism (not shown) is disposed in the casing 421. A concentrator 422 for concentrating the pulsed laser light oscillating from the pulsed laser oscillating mechanism is mounted at the front end of the casing 421. Further, the laser beam illumination means 42 has a spot position adjustment mechanism (not shown) for adjusting the position of the spot of the pulsed laser beam condensed by the concentrator 422. The photographing mechanism installed at the end of 201133717 before the housing 421 constituting the above-described laser beam irradiation mechanism 42 has an illumination mechanism for illuminating the workpiece, an optical system for capturing an area illuminated by the illumination mechanism, and photographing is captured by the optical system. Such as a shooting element (CCD), etc. 'and the captured image signal is transmitted to a control mechanism not shown. The laser processing groove forming step described below is described with reference to FIGS. 3 and 4, wherein the laser processing groove forming step uses the laser processing apparatus 4 to illuminate the wafer 2 along the scribe line. The sapphire substrate 20 has a laser beam of an absorptive wavelength to form a laser processing trench as a break point. First, the side of the protective tape 3 attached to the surface of the optical device wafer 2 is placed on the chuck table 41 of the laser processing apparatus 4 not shown in Fig. 3. Then, by moving the suction mechanism (not shown), the optical device wafer 2 is held on the chuck table 41 by the protective tape 3 (wafer holding step). Therefore, the optical device wafer held on the chuck table 41 is on the upper side of the back surface of the sapphire base (10). In this manner, the chuck table 41 which attracts the optical unit crystals is placed under the photographing machine age. When the chuck table 41 is placed directly under the photographing mechanism 43, the photographing mechanism = and the control mechanism not shown in the figure performs the calibration operation 1 of the inspection and lifting area of the wafer 2, and the photographing mechanism is in the drawing. The image processing of the alignment of the predetermined imaging material 22 formed on the optical device wafer 2 and the alignment of the laser light 422 along the laser beam 422 is not performed. The wafer 2' is formed in a direction perpendicular to the predetermined direction of the upper surface. 2 201133717 The shovel 22 also performs the calibration of the position of the laser beam irradiation. At this time, the optical device wafer 2 is formed with the light-emitting layer of the dicing street 2 (the surface of the worm layer is located on the lower side, and the sapphire substrate 2 constituting the optical device wafer 2 is transparent, so it can be from sapphire The back side of the substrate 2 is cut and cut. When the above is performed, the cutting path 22 formed on the surface of the light-emitting layer (stupid layer) 21 of the optical device wafer 2 held on the chuck table 41 is detected. After the calibration of the light riding position, as shown in FIG. 4(4), the suction cup 41 is moved to the laser light irradiation area where the concentrating light 422 of the laser light irradiation unit 42 is located, and the predetermined cutting path 22 is terminated. (on the left end of Fig. 4(4)) is placed directly under the concentrator 422 of the laser beam illumination mechanism 42. Then, the spot p of the pulsed laser light irradiated from the concentrator 422 is aligned to form the crystal of the optical device. The back surface of the sapphire substrate 2 is 2〇b (upper surface). Then, the surface is irradiated with the pulsed laser light having a wavelength absorbing to the sapphire substrate 20 from the concentrator 422, and the chuck table 41 is placed at the fourth ( a) In the figure, the direction is indicated by the arrow X1. The feed speed is moved. Then, as shown in Fig. 4(b), when the irradiation position of the concentrator 422 of the laser beam irradiation mechanism 42 reaches the other of the dicing street 22 (the right end is in the 4th (b) figure) After the position, the irradiation of the pulsed laser light is stopped, and at the same time, the movement of the chuck table 41 is stopped. As a result, as shown in Figs. 4(b) and 4(c), a continuous laser is formed along the dicing street 22. The processing groove 2〇1 (the laser processing groove forming step). Further, as shown in Fig. 4(c), the deteriorating substance 202 generated when the laser processing groove is formed is adhered to the wall surface of the laser processing groove 201. The processing conditions of the above-described laser processing groove forming step are not set. Light source: semiconductor excited solid laser (Nd : YAG) 10 201133717 Wavelength: 355 nm Pulse energy 35 μ] Pulse width: 180 ns Repeat frequency: 100 kHz Spot diameter: 60 mm / Second processing feed speed groove depth: 15 // m. When performing as described above, all the cutting paths 22 extending in the predetermined direction of the optical device wafer 2 are subjected to the above-described laser processing groove forming step, and the chuck table 41 is rotated. Moving at 90 degrees, along a vertical phase formed in relation to the predetermined direction Performing the above-described laser processing groove forming step in each of the cutting lanes 22 in the intersecting direction. After performing the above-described laser processing groove forming step, performing a metamorphic substance removing step, which is mainly composed of diamond abrasive grains The cutting insert is placed on the laser processing groove formed on the substrate, and the cutting blade rotates while rotating along the wall surface of the laser processing groove, thereby removing the metamorphic substance generated when the laser processing groove is formed. At the same time, the wall surface of the laser processing groove is processed into a rough surface. This modified substance removing step is carried out using the cutting device 5 shown in Fig. 5 in the embodiment shown in the drawing. The cutting device 5 shown in Fig. 5 includes a chuck table 51 for holding a workpiece, a cutting mechanism 52 for cutting and holding a workpiece on the chuck table 51, and a photographing mechanism 53 for photographing a workpiece held by the chuck table 51. . The suction cup table 51 is configured to attract and hold the workpiece, and can be moved by the cutting feed mechanism (not shown) in the cutting feed direction indicated by the arrow X in FIG. 5, and is not shown in the figure. The feed mechanism moves it in the direction indicated by the arrow Y into the 11 201133717 direction. The cutting mechanism 52 has a spindle housing 521 that is substantially horizontal, a rotary spindle 522 that is rotatably supported by the spindle housing 521, and a cutting insert 523 that is attached to the front end of the rotary spindle 522. The mandrel 522 can be disposed in a spindle motor 521, which is not shown in the figure, and rotates in the direction indicated by the arrow 523a. Further, the cutting insert 523 is constituted by an electroformed insert of diamond abrasive grains having a particle diameter of m by nickel plating in the embodiment shown in the drawing, and has a thickness of 20 " m. The imaging unit 53 has an illumination mechanism for illuminating the workpiece, an optical system for capturing an area illuminated by the illumination unit, an imaging element (cc D) for capturing an image captured by the optical system, and the like, and the captured image signal Transfer to a control mechanism not shown in the figure. To use the above-described cutting device 5, a metamorphic substance removing step is performed, and as shown in FIG. 5, the side of the protective tape 3 attached to the surface of the optical device wafer 2 on which the above-described laser processing forming step has been performed is placed on the chuck table. Then, the suction mechanism (not shown) is operated by mistake, so that the optical device wafer 2 is held on the chuck table 51 (wafer holding step). The optical device wafer 2 of the Taiwanese enamel is applied to the back surface of the blue f stone substrate 2G: the suction plate table 51 holding the optical device wafer 2 is sucked in such a manner that the cutting feed mechanism not shown is placed in the shooting mechanism W Directly below. When the 53 and the second table 51 are placed directly under the photographing mechanism 53, the photographing mechanism B and the control unit (not shown) perform the detection optical device wafer 2 plus = 20% = quasi-operation, the photographing mechanism 53 and control not shown in the figure =: = alignment of the laser processing ditch and the cutting tool 12 201133717 piece 523 for the sapphire substrate 2 constituting the optical device wafer 2 (Calibration step). Again, the sapphire on the wafer 2 that constitutes the optical device The laser processing groove 2G1 formed on the back surface of the plate 20 in a direction perpendicularly intersecting with the predetermined direction also performs the calibration of the processing region in the same manner. When the above is performed, the wire device wafer 2 is detected and held on the suction button. After the calibration of the processing region, the chuck table 5i holding the optical device crystal (10) is attracted to the processing start position of the processing region below the cutting blade 523. The button is positioned as the optical device wafer 2 as shown in Fig. 6(4) The end of the laser processing groove 20! (the left end in the 6th (8th) view) is located on the right side of the cutting blade 523 rightward by a predetermined amount (the machining feed start position positioning step). After the device wafer 2 is placed at the processing start position of the processing region, the cutting blade 523 is rotated in the direction in which the arrow is now displayed, and the - surface is in standby as indicated by the 2-point chain line in the sixth (a) drawing. The position is cut into the feed to the lower side, and is placed at a predetermined plunging feed position as indicated by the solid line in Fig. 6(4). The plunging feed position is set at the lower end of the outer periphery of the cutting insert 523 from the sapphire substrate constituting the optical device wafer 2. 2 The back surface of the crucible is 2〇b (upper) at a position lower by 20//m. Next, as shown in Fig. 6(a), the cutting insert 523 is rotated in the direction of the arrow 523a, at a predetermined rotation speed ( For example, 2 rpm) rotation, and the chuck table 51, that is, the optical device wafer 2 is processed and fed at a predetermined processing feed speed in the direction indicated by the arrow 乂1 in the sixth (a) diagram (deteriorating substance) In the step of removing the deteriorated substance, the cutting insert 523 is moved in the opposite direction along the laser processing groove 201. As a result, since the thickness of the cutting insert 523 (20 // m) is set to be larger than the laser processing groove 2〇ι (formed by pulsed laser light having a spot diameter of S. 13 201133717) is thick, so that the deterioration of the wall surface attached to the laser processing groove 201 can be removed as shown in the above-mentioned Fig. 6(c). At the same time, as shown in Fig. 6(c), the material 202 is formed into a processing groove 203 whose wall surface is processed into a rough surface. In the step of removing the deteriorated substance, since the cutting blade 523 is processed along the surface of the surface of the laser processing groove 201, the deteriorated substance 202 can be easily removed, and the laser processing groove can be easily removed. The wall of 201 forms a rough surface. Further, when the chuck table 51, that is, the other end of the optical device wafer 2 (the right end in FIG. 6(b)) reaches a position shifted to the left from the directly below the cutting blade 523 by a predetermined amount, the movement of the chuck table 51 is stopped. . Then, the cutting blade 523 is raised and placed at the retracted position indicated by the 2-point chain line. The processing conditions of the above-described deteriorated substance removal step are set as follows. Cutting insert: Electroforming insert of diamond abrasive grain with thickness 20# m Cutting depth: 20 // m Processing feed rate: 60 mm/sec When proceeding as above, all cuts extending in the predetermined direction of the optical device wafer 2 After the passage 22 performs the above-described deterioration substance removal step, the suction table 51 is rotated by 90 degrees, and the above-described deteriorated substance removal step is performed along each of the laser processing grooves 201 formed in a direction perpendicularly intersecting with the predetermined direction. After performing the metamorphic substance removing step as described above, a wafer supporting step of attaching the back surface 20b of the sapphire substrate 20 constituting the optical device wafer 2 to the surface of the dicing tape provided on the annular frame is performed. Further, the protective member attached to the surface of the optical device wafer 2 is peeled off. That is, as shown in Figs. 7(a) and 7(b), the surface of the dicing tape 7 which is provided to cover the inner opening portion of the annular frame 6 at the outer peripheral portion is attached to the surface of the optical device wafer 2 14 201133717. The back side of the sapphire substrate 2〇2〇b. Then, the protective tape 3 attached to the surface 2a of the optical device wafer 2 is peeled off. Next, an optical device layer separation step is performed, which is formed by laminating the surface 2〇a' formed on the surface of the sapphire substrate 20 constituting the optical device wafer 2 as an illuminating layer (epitaxial layer) 21 of the optical device layer. The cutting lane 22 is separated. This optical device layer separation step can be carried out using the cutting device 5 shown in Fig. 5 described above. To perform the optical device layer separation step using the above-described cutting device 5, as shown in Fig. 8, the side of the cutting tape 7 to which the back surface 20b of the sapphire substrate 2 constituting the optical device wafer 2 is attached is placed on the chuck table. At 51, the suction mechanism (not shown) is actuated to hold and hold the optical device wafer 2 on the chuck table 51 (the dome holding step). Thus, the optical device wafer 2 held on the chuck table has the surface 2a as the upper side. Further, in Fig. 8, the annular frame 6' to which the dicing tape 7 is attached is omitted, and the ring frame 6 is fixed to the chucking device 51. In this manner, the chuck table 51 holding the optical device wafer 2 is sucked to a cutting feed mechanism (not shown) and placed directly under the shooting mechanism brother. When the chuck table 51 is placed directly under the photographing mechanism 53, the photographing mechanism and the control unit (not shown) perform a calibration operation for detecting the area to be processed of the wafer 2 of the optical device. That is, the photographing mechanism 53 and the control mechanism (not shown) perform the calibration (calibration step) for performing the alignment of the scribe line 22 and the cutting insert 523 which are formed on the surface of the optical device wafer 2 to form the predetermined direction. Further, the alignment of the processing region is performed in the same manner for the surface 2 & which is formed on the surface 2 of the optical device wafer 2, which is formed to intersect perpendicularly with respect to the predetermined direction.

S 15 201133717 田如、進行進行檢測保持在吸盤台51上之光學裝 置晶圓2之加工區域的校準後，將則保持有光學裝置晶圓 2之吸盤台51移動至為切削刀片切下方之加工區域之加工 開始位置’然後’如第9(a)圖所示’ ^位成光學裳置晶圓2 之要加工之切割道22的—端（在第9⑷圖為左端)位於自切 肖j刀片523之JL下方右移預定量之側（加卫進給開始位置定 位v驟）胃如此進行，將光學裝置晶圓2置於加工區域之S 15 201133717 Tian Ru, after performing the calibration of the processing area of the optical device wafer 2 held on the chuck table 51, moves the chuck table 51 holding the optical device wafer 2 to the processing for cutting the cutting blade The processing start position of the region is 'then' as shown in Fig. 9(a). The position of the scribe line 22 to be processed (the left end in the 9th (4th) diagram) is located at the left end of the etched wafer 2 The lower side of the JL of the blade 523 is moved to the right side by a predetermined amount (the position of the urging feed start position v). The stomach is thus performed, and the optical device wafer 2 is placed in the processing area.

一面將切削刀片5之3於以箭號523a顯示之 方向紅轉，-面從在第9⑷圖中以2點鏈線所示之待機位置 切入進給至下方，而如第9⑷圖實線所示，置於預定切入進 給位置。此切入進給位置設定在切削刀片5 2 3之外周緣之下 端從光料置晶圓2之表面2a(上面）低之位置。 接著，如第9(a)圖所示’一面將切削刀片523於箭號523a 所不之方向旋轉’—面使其以預定旋轉速度（例如20000rpm) 方疋轉’而使吸盤台51、即光學裝置晶圓2於第9(a)圖以箭號 XI所不之方向以預定加工進給速度加工進給（光學裝置層 7刀離步驟）。結果’如第9(b)圖及第9(c)圖所示，於光學裝置 0曰圓1之表面2a沿著切割道22形成切削溝204，作為光學裝 置層之發光層（磊晶層）21可沿著切割道22分離，並且，於藍 寶石基板20之表面沿著切割道22形成切削痕跡205。在此光 學裝置層分離步驟中，由於切削層疊形成於藍寶石基板20 之表面2〇a之作為光學裴置層的發光層（磊晶層）21，故可易 以切削刀片523切削。此外，當吸盤台51、即光學裝置晶圓 16 1 之另—端（在第9(b)圖為右端）到達至自切削刀片523之正 201133717 下方左移預定量之位置後，停止吸盤台51之移動。然後， 使切削刀片523上升，而置於以2點鏈線所示之退避位置。 上述光學裝置層分離步驟之加工條件如下設定。 切削刀片 .厚度2〇" m之鑽石研磨粒之電鑄刀片 切入深度 加工進給速度 ：5〇mm/秒 當如以上進行，沿著於光學裝置晶圓2之預定方向延伸 之所有切割道22施行上述光學裝置層分離步驟後，使吸盤 台51旋動90度，沿著形成於相對於上述預定方向垂直相交 之方向之各切割道22，施行上述光學裝置層分離步驟。 接著，施行晶圓分割步驟，該晶圓分割步驟係對光學 裝置晶圓2賦與外力’以將光學裝置晶圓2沿著已去除變質 物質之加工溝203斷開，而分割成諸個光學裝置23者。晶圓 分割步驟使用第1G圖所示之膠帶擴張襄置8來施行。第1〇圖 所不之膠帶擴張裝置8具備料上述環狀㈣6之框架保持 機構81、用以將裝設在保持於該框架保持機構以之環狀框 架6之切割膠帶7擴張的膠帶擴張機構82及拾取筒夾83。框 架保持機構81由環狀㈣保持構件8 u、配設於該框架保持 構件811之外周’作為gj定機構之複數個夾812構成。框架 保持構件811之上面形成用以載置環狀框架6之载置面 811a ’而可於此載置面8Uai載置環狀框架6。然後，載置 在載置面81 la上之環狀框架6可以夾812固定於框架保持構 件8n。如此構成之框架保持機構81以膠帶擴張機構幻支標 成可於上下方向進退。 17 201133717 膠帶擴張機構82具備配設於上述環狀_保持構件 811之内彻|之擴張滾筒821。_張滾筒821具有内徑及外 徑，該内徑及外徑係小於環狀框架6之内徑，且大於貼附於 裝設在該環狀框架6之切割膠帶7之光學裝置晶圓2的外徑 者。又，擴張滚筒821於下端具有支樓凸緣822。圖中所示 之實施形狀㈣舰機構82具備可使上述環狀框架保持 構件8U於上下方向進退之支撐機構823。此支樓機構⑵由 配設於上述支撐凸緣822上之複數個氣缸823a構成，其活塞 桿823b連結於上述環狀框架保持構件811之下面。如此，由 複數個氣缸823a構成之支撐機構823使環狀框架保持構件 811如第11(a)圖所示，在載置面811a為與擴張滾筒821之上 知約略相同之咼度的基準位置與如第丨丨化）圖所示，較擴張 滾筒821之上端低預定量之擴張位置間於上下方向移動。 就使用如以上構成之膠帶擴張裝置8施行之晶圓分割 步驟’參照第11圖來說明。即，如第U⑷圖所示，將裝設 了貼附有光學裝置晶圓2之切割膠帶7的環狀框架ό載置於 構成框架保持機構81之框架保持構件811之載置面81 la 上’以夾812固定於框架保持構件811(框架保持步驟）。此 時’框架保持構件811置於第11(a)圖所示之基準位置。接 著’將作為構成膠帶擴張機構82之支樓機構823之複數個氣 缸823a作動，而使環狀框架保持構件811下降至第11(b)圖所 示之擴張位置。因而，由於固定於框架保持構件811之載置 面811a上之環狀框架6也下降，故如第圖所示，裝設在 環狀框架6之切割膠帶7接觸擴張滾筒821之上端緣，而被擴 18 201133717 張(勝帶擴張步驟）。結果’拉伸力以放射狀作用於貼附在切 割膠帶7之光學裝置晶圓2。如此，由於當拉伸力以放射狀 作用於光學裝置晶圓2時’於構成光學裝置晶圓2之藍寶石 基板20之背面2015沿著切割道22形成有加工溝203 ’並且， 於藍寶石基板20之表面20a沿著切割道形成有切削痕跡 204，故加工溝及切削痕跡204形成為斷開之起點，光學裝 置晶圓2沿著切割道22斷開，光學裝置晶圓2可分割成諸個 光學裝置23(晶圓分割步驟）。如此，於分割成諸個之光學裝 置23間形成間隙S。 接著’如第11(c)圖所示，將拾取筒失83作動，吸附光 學裝置23 ’將之從切割膠帶7剝離而拾取(拾取步鱗）。此外， 在拾取步驟，如上述，由於於貼附在切割膠帶7之諸個光學 裝置23間形成有間隙S，故可在不與相鄰之光學装置23接觸 下，輕易地拾取。由於如此進行而分割之光學装置23除了 藉藍寶石基板20之側壁面施行上述變質物質去除步驟，去 除吸收光而導致亮度降低之變質物質，還加工成粗面，故 光可有效地釋放，亮度可提高。 此外’在上述實施形態中，顯示了於施行晶圓分割步 驟前’施行光學裝置層分離步驟之例，亦可不施行光學裝 置層分離步驟，而於施行變質物質去除步驟後，施行晶圓 斷開步驟。While turning the cutting blade 5 to 3 in the direction indicated by the arrow 523a, the - face is cut into the lower direction from the standby position indicated by the 2-point chain line in the 9th (4) figure, and the solid line is as shown in the 9th (4) figure. Show, placed in the predetermined cut-in feed position. This plunging feed position is set to a position lower than the outer periphery of the cutting insert 5 2 3 from the surface 2a (upper surface) of the wafer 2 to be placed. Next, as shown in Fig. 9(a), the cutting insert 51 is rotated at a predetermined rotational speed (for example, 20,000 rpm) while the cutting insert 523 is rotated in the direction indicated by the arrow 523a. The optical device wafer 2 is processed and fed at a predetermined processing feed speed in the direction indicated by the arrow XI in the ninth (a) drawing (the optical device layer 7 is separated from the step). As a result, as shown in Figs. 9(b) and 9(c), a cutting groove 204 is formed along the dicing street 22 on the surface 2a of the optical device 0 曰1 as an illuminating layer (optical layer) of the optical device layer. 21 can be separated along the scribe line 22, and a cutting mark 205 is formed along the scribe line 22 on the surface of the sapphire substrate 20. In the optical device layer separation step, since the light-emitting layer (the epitaxial layer) 21 which is an optical interlayer layer formed on the surface 2A of the sapphire substrate 20 is formed by lamination, the cutting blade 523 can be easily cut. Further, when the chuck table 51, that is, the other end of the optical device wafer 16 1 (the right end of the ninth (b) diagram) reaches a position shifted to the left by a predetermined amount from the positive 201133717 of the cutting blade 523, the chuck table is stopped. 51 moves. Then, the cutting insert 523 is raised and placed at the retracted position indicated by the 2-point chain line. The processing conditions of the above-described optical device layer separation step are set as follows. Cutting insert. The thickness of the 〇" m diamond abrasive granules is cut into the depth machining feed rate: 5 〇 mm / sec. As above, all scribe lines extending along the predetermined direction of the optical device wafer 2 After the optical device layer separation step is performed, the chuck table 51 is rotated by 90 degrees, and the optical device layer separating step is performed along each of the dicing streets 22 formed in a direction perpendicular to the predetermined direction. Next, a wafer dividing step is performed to apply an external force 'to the optical device wafer 2 to disconnect the optical device wafer 2 along the processing groove 203 from which the deteriorated substance has been removed, and to be divided into opticals. Device 23. The wafer dividing step is performed using the tape expanding device 8 shown in Fig. 1G. The tape expanding device 8 of the first drawing is provided with a frame holding mechanism 81 for feeding the above-mentioned ring (four) 6, and a tape expanding mechanism for expanding the dicing tape 7 attached to the ring frame 6 held by the frame holding mechanism. 82 and pick up the collet 83. The frame holding mechanism 81 is composed of a plurality of clips 812 which are arranged in the outer circumference of the frame holding member 811 as a gj fixing mechanism. The upper surface of the frame holding member 811 is formed with a mounting surface 811a' on which the annular frame 6 is placed, and the annular frame 6 can be placed on the mounting surface 8Uai. Then, the annular frame 6 placed on the mounting surface 81 la can be fixed to the frame holding member 8n by the clip 812. The frame holding mechanism 81 thus constructed can be moved forward and backward in the up and down direction by the illusion of the tape expansion mechanism. 17 201133717 The tape expansion mechanism 82 includes an expansion roller 821 disposed inside the ring-shaped holding member 811. The sheet roller 821 has an inner diameter and an outer diameter which are smaller than the inner diameter of the annular frame 6 and larger than the optical device wafer 2 attached to the dicing tape 7 mounted on the annular frame 6. The outer diameter of the person. Further, the expansion drum 821 has a branch flange 822 at the lower end. The implementation shape (four) of the ship mechanism 82 shown in the drawing includes a support mechanism 823 that allows the annular frame holding member 8U to advance and retreat in the vertical direction. The branch mechanism (2) is composed of a plurality of cylinders 823a disposed on the support flange 822, and a piston rod 823b is coupled to the lower surface of the annular frame holding member 811. In this manner, the support mechanism 823 composed of the plurality of cylinders 823a causes the annular frame holding member 811 to have a similar reference position on the mounting surface 811a as shown in Fig. 11(a). As shown in the figure of the second embodiment, the expansion position is lower than the upper end of the expansion drum 821 by a predetermined amount in the vertical direction. The wafer dividing step performed using the tape expanding device 8 constructed as above will be described with reference to Fig. 11. That is, as shown in Fig. 4(4), the annular frame 装 on which the dicing tape 7 to which the optical device wafer 2 is attached is placed on the mounting surface 81 la of the frame holding member 811 constituting the frame holding mechanism 81 'The clip 812 is fixed to the frame holding member 811 (frame holding step). At this time, the frame holding member 811 is placed at the reference position shown in Fig. 11(a). Then, the plurality of cylinders 823a as the branching mechanism 823 constituting the tape expanding mechanism 82 are actuated, and the annular frame holding member 811 is lowered to the expanded position shown in Fig. 11(b). Therefore, since the annular frame 6 fixed to the mounting surface 811a of the frame holding member 811 is also lowered, as shown in the figure, the dicing tape 7 attached to the annular frame 6 contacts the upper edge of the expansion roller 821, and Was expanded 18 201133717 Zhang (winning with expansion steps). As a result, the tensile force acts radially on the optical device wafer 2 attached to the cutting tape 7. Thus, when the tensile force acts radially on the optical device wafer 2, a processing groove 203' is formed along the dicing street 22 on the back surface 2015 of the sapphire substrate 20 constituting the optical device wafer 2, and on the sapphire substrate 20 The surface 20a is formed with the cutting marks 204 along the dicing streets, so that the machining grooves and the cutting marks 204 are formed as the starting point of the breaking, the optical device wafer 2 is broken along the dicing street 22, and the optical device wafer 2 can be divided into pieces. Optical device 23 (wafer dividing step). Thus, a gap S is formed between the optical devices 23 divided into pieces. Next, as shown in Fig. 11(c), the pickup cylinder is deactivated 83, and the adsorption optical device 23' peels off from the dicing tape 7 to pick up (pick up the scale). Further, in the picking up step, as described above, since the gap S is formed between the optical devices 23 attached to the dicing tape 7, it can be easily picked up without coming into contact with the adjacent optical device 23. The optical device 23 which is divided in this manner performs the above-described deterioration substance removal step by the side wall surface of the sapphire substrate 20, removes the deteriorated substance which absorbs the light and causes the brightness to be lowered, and is processed into a rough surface, so that the light can be efficiently released, and the brightness can be improve. Further, in the above embodiment, an example in which the optical device layer separating step is performed before the wafer dividing step is performed, and the optical device layer separating step may not be performed, and after the modifying substance removing step is performed, the wafer is disconnected. step.

S 19 201133717 I：圖式簡單說明3 第1(a)圖、第1(b)圖係顯示依據本發明光學裝置晶圓之 加工方法加工之光學裝置晶圓的立體圖及主要部份放大截 面圖。 第2(a)圖、第2(b)圖係本發明光學裝置晶圓之加工方法 之保護構件貼附步驟的說明圖。 第3圖係用以施行本發明光學裝置晶圓之加工方法之 雷射加工溝形成步驟之雷射加工裝置的主要部份立體圖。 第4(a)圖〜第4(c)圖係本發明光學裝置晶圓之加工方法 之雷射加工溝形成步驟的說明圖。 第5圖係用以施行本發明光學裝置晶圓之加工方法之 變質物質去除步驟之切削裝置的主要部份立體圖。 第6(a)圖〜第6(c)圖係本發明光學裝置晶圓之加工方法 之變質物質去除步驟的說明圖。 第7(a)圖、第7(b)圖係本發明光學裝置晶圓之加工方法 之晶圓支撐步驟的說明圖。 第8圖係本發明光學裝置晶圓之加工方法之光學裝置 層分離步驟的說明圖。 第9(a)圖〜第9(c)圖係本發明光學裝置晶圓之加工方法 之光學裝置層分離步驟的說明圖。 第10圖係用以施行本發明光學裝置晶圓之加工方法之 晶圓分割步驟的膠帶擴張裝置之立體圖。 第11(a)圖〜第11(c)圖係本發明光學裝置晶圓之加工方 法之晶圓分割步驟的說明圖。 20 201133717 主要元件符號說明】 2.. .光學裝置晶圓 2a...光學裝置晶圓之表面 3.. .保護膠帶 4.. .雷射加工裝置 5.. .切削裝置 6.. .環狀框架 7.. .切割膠帶 8.. .膠帶擴張裝置 20…藍寶石基板 20a···藍寶石基板之表面 20b··.藍寶石基板之背面 21.. .發光層 22.. .切割道 23.. .光學裝置 41.. .雷射加工裝置之吸盤台 42.. .雷射光線照射機構 43.. .雷射加工裝置之拍攝機構 51.. .切削裝置之吸盤台 52…切削機構 53.. .切削裝置之拍攝機構 81.. .框架保持機構 82.. .膠帶擴張機構 83.. .拾取筒夾 201.. .雷射加工溝 202.. .變質物質 203.. .加工溝 204…切削溝 205.. .切削痕跡 421.. .殼體 422.. .聚光器 521…心軸殼 522.. .旋轉心軸 523.. .切削刀片 523a，X，XI，Y·..箭號 811.. .環狀框架保持構件 811a...載置面 812…夾 821.. .擴張滾筒 822.. .支撐凸緣 823.. .支撐機構 823a...氣缸 823b...活塞桿 P...聚光點 5.. .間隙S 19 201133717 I: BRIEF DESCRIPTION OF THE DRAWINGS 3 FIGS. 1(a) and 1(b) are perspective views and main part enlarged cross-sectional views of an optical device wafer processed by the optical device wafer processing method according to the present invention. . Figs. 2(a) and 2(b) are explanatory views of a protective member attaching step of the method for processing an optical device wafer of the present invention. Fig. 3 is a perspective view showing the main part of a laser processing apparatus for performing a laser processing groove forming step of the optical device wafer processing method of the present invention. 4(a) to 4(c) are explanatory views of a laser processing groove forming step of the method for processing an optical device wafer of the present invention. Fig. 5 is a perspective view showing a main part of a cutting device for performing a modifying substance removing step of the method for processing an optical device wafer of the present invention. Fig. 6(a) to Fig. 6(c) are explanatory views of the process of removing the deteriorated substance in the method of processing the optical device wafer of the present invention. Figs. 7(a) and 7(b) are explanatory views of a wafer supporting step of the method for processing an optical device wafer of the present invention. Fig. 8 is an explanatory view showing an optical device layer separation step of the optical device wafer processing method of the present invention. 9(a) to 9(c) are explanatory views of the optical device layer separation step of the optical device wafer processing method of the present invention. Fig. 10 is a perspective view of a tape expanding device for performing a wafer dividing step of the method for processing an optical device wafer of the present invention. 11(a) to 11(c) are explanatory views of a wafer dividing step of the method for processing an optical device wafer of the present invention. 20 201133717 Description of main component symbols] 2.. Optical device wafer 2a... Optical device wafer surface 3.. Protective tape 4... Laser processing device 5.. Cutting device 6.. Shaped frame 7.. Cutting tape 8.. Tape expansion device 20... Sapphire substrate 20a··· Surface of sapphire substrate 20b··. Back surface of sapphire substrate 21.. Light-emitting layer 22.. Cutting street 23.. Optical device 41.. The suction table of the laser processing device 42.. Laser light irradiation mechanism 43.. The imaging mechanism of the laser processing device 51.. The suction table 52 of the cutting device... Cutting mechanism 53.. The photographing mechanism of the cutting device 81.. Frame retaining mechanism 82.. Tape expansion mechanism 83.. Pickup collet 201.. Laser processing groove 202.. Metamorphic material 203.. Processing groove 204...Cutting Groove 205.. cutting marks 421.. housing 422.. concentrator 521... mandrel shell 522.. rotating mandrel 523.. cutting insert 523a, X, XI, Y·.. arrow 811.. annular frame holding member 811a... mounting surface 812... clip 821.. expansion roller 822.. support flange 823.. support mechanism 823a... cylinder 823b... piston rod P ...light spot 5.. . Gap

S 21S 21

Claims (1)

201133717 七、申請專利範圍： 1. 一種光學裝置晶圓之加工方法，係將於基板表面層疊光 學裝置層、並於以形成格子狀之複數個切割道所劃分之 複數個區域形成有光學裝置之光學裝置晶圓，沿著切割 道分割成諸個光學裝置者，其特徵在於具有： 雷射加工溝形成步驟，係沿著切割道對光學裝置晶 圓之基板照射具吸收性之波長的雷射光線，以於基板之 表面或背面形成作為斷開基點之雷射加工溝者； 變質物質去除步驟，係將以鑽石研磨粒為主成份之 切削刀片置於形成在基板之雷射加工溝，將該切削刀片 一面旋轉，一面邊循著雷射加工溝之壁面、邊相對移 動，藉此，可去除於形成雷射加工溝時生成之變質物 質，同時，將雷射加工溝之壁面加工成粗面者；及 晶圓分割步驟，係對光學裝置晶圓賦與外力，以將 光學裝置晶圓沿著已去除變質物質之加工溝斷開，而分 割成諸個光學裝置者。 2. 如申請專利範圍第1項之光學裝置晶圓之加工方法，其 中該雷射加工溝形成步驟從基板之背面側沿著切割道 照射雷射光線，以於基板之背面形成雷射加工溝。 3. 如申請專利範圍第2項之光學裝置晶圓之加工方法，該 光學裝置晶圓之加工方法具有光學裝置層分離步驟，該 光學裝置層分離步驟係使用以鑽石研磨粒為主成份之 切削刀片，將於基板之背面形成有雷射加工溝之光學裝 置晶圓之光學裝置層沿著切割道切削，以將光學裝置層 沿著切割道分離者。 22201133717 VII. Patent application scope: 1. A method for processing an optical device wafer by laminating an optical device layer on a surface of a substrate and forming an optical device in a plurality of regions divided by a plurality of dicing streets formed in a lattice shape. An optical device wafer, which is divided into optical devices along a dicing street, characterized by: a laser processing groove forming step of illuminating a substrate of the optical device wafer with an absorptive wavelength laser along the scribe line The light is formed on the surface or the back surface of the substrate as a laser processing groove as a breaking base point; the removing material removing step is to place a cutting blade containing diamond abrasive grains as a main component in a laser processing groove formed on the substrate, The cutting blade rotates while moving along the wall surface and the side of the laser processing groove, thereby removing the deteriorated substance generated when the laser processing groove is formed, and processing the wall surface of the laser processing groove into a thick surface. And the wafer dividing step is to apply an external force to the optical device wafer to process the optical device wafer along the removed metamorphic material Off and the points were cut into various optical devices. 2. The method of processing an optical device wafer according to claim 1, wherein the laser processing groove forming step irradiates the laser beam from the back side of the substrate along the dicing street to form a laser processing groove on the back surface of the substrate. . 3. The method for processing an optical device wafer according to claim 2, wherein the optical device wafer processing method has an optical device layer separation step, wherein the optical device layer separation step uses cutting with diamond abrasive particles as a main component The blade, the optical device layer of the optical device wafer on which the laser processing trench is formed on the back side of the substrate, is cut along the scribe line to separate the optical device layer along the scribe line. twenty two
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JP2010045151A (en) * 2008-08-12 2010-02-25 Disco Abrasive Syst Ltd Method of processing optical device wafer
TW201009914A (en) * 2008-08-29 2010-03-01 Mattech Internat Co Ltd A metal heat-sink wafer cutting method of LED
JP5473415B2 (en) * 2009-06-10 2014-04-16 株式会社ディスコ Laser processing equipment

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