201127088 六、發明說明： 【發明所屬之技術領域】 本發明係關於/種微電子機械系統傳聲器及其製造方 法0 【先前技術】 一般，傳聲器是將聲音轉換成電信號的一種裝置。該 傳聲器用於各種通信設備，如移動終端機等的移動通信設 備、耳機或助聽器等。這種傳聲器應具有良好的電子/音響 性能、可靠性及工作性。 該傳聲器有電容傳聲器（condenser microphone)和微電 子機械系統傳聲器（MEMS microphone)等。 §亥電谷傳聲器透過先分別製造振動板、支樓板及信號 處理用印刷電路板等之後，將該等結構裝配在殼的内部而 製造完成。這種電容傳聲器由於製造印刷電路板的程序和 製造電容傳聲器的程序分離，因此生產成本增加，且在其 小型化也受到了限制。 該微電子機械系統傳聲器利用半導體技術將振動板和 支樓板等音響感知元件部分全部製造在一個石夕基板上。 在韓國申請號10-2002-0074492 (申請日：2〇〇2年u 月27曰）中公開了微電子機械系統傳聲器。該微電子機械 糸統傳聲為為了在下部電極注入電子，以約1 1 的古、、田 進行熱處理。此時，該膜（振動板）實質上由金屬性下部 電極、石夕氮化膜及矽氧化膜等不同物質構成，因此在高渾 3 201127088 熱處理時由於熱膨脹係數的差異產生殘餘應力（壓縮應力 或膨脹應力）。隨著該膜受到殘餘應力會產生變形或破裂 (crack)。進而，當殘餘應力施加於該膜時，該膜難以隨音 響而正確地振動，因此難以將產生的音響正確地轉換為電 信號。 另外由於該傳聲器透過姓刻石夕基板的下側來調節膜 之厚度，因此有可能使該膜的厚度不均勻。當該膜的厚度 不均勻時，膜對音響的振動不規則，有可能難以將音響正 確地轉換為電信號。 曰 在國際公開號WO2007/U2743 (公開日：2〇〇7年〇3 月29日）中公開了一種氧化矽基板而形成背容積（ volume)的微電子機械系統傳聲器製造方法。此時，為了 在該矽基板形成背容積15而氧化多孔性矽結構9，並形成 忒多孔性矽結構’依次進行蒸鍍及蝕刻導電層2、金屬層3、 石夕氧化膜4等的程序（la_lh程序）等。為了形成該多孔性 石 =構必須進行多次程序’因而微電子機械系統傳聲器的 製這時間有可忐顯著增加。另外，由於根據電壓條件該多 孔性矽結構9的矽，其氧化速度有可能不均勻，因此也可 能不均勻地關該背容# 15。當料容積的表面侧不均 勻，則該膜和背容積之間的距離變得不均勻，因此有可能 難以將音響準確地轉換成電信號。 /另外，該振動膜與矽基板或矽氧化臈的熱膨脹係數之 差很大。但是，由於該振動膜透過矽氧化膜與矽基板接觸， 因此s亥振動膜與矽基板接觸的部位因熱膨脹係數之差而茂] 4 201127088 能產生破裂。 另外，所述兩個對比文獻是在矽基板疊層膜和支撐板 的結構，因此該微電子機械系統傳聲器的高度只會變高。 因此，對製造小型化的傳聲器受到了限制。 【發明内容】 為解決上述問題，本發明的目的在於提供一種能夠在 膜與矽基板接觸的部位使殘餘應力最小化的微電子機械系 統傳聲器及其製造方法。 本發明的另一個目的在於提供一種無需為了在膜和支 撐板吸附離子而以高溫加熱的微電子機械系統傳聲器及其 製造方法。 本發明的另一個目的在於提供一種相較於在矽基板的 上側層疊膜和支撐板的結構，能夠容易地進行犧牲層的平 坦化過程，並能夠自由地調節該膜和支撐板的厚度，從而 能夠提高傳聲器的音響特性之微電子機械系統傳聲器及其 製造方法。 本發明的再一個目的在於提供一種可以將微電子機械 系統傳聲器的高度減小到膜和支撐板之間的間距以上之微 電子機械系統傳聲器及其製造方法。 為達到上述目的的本發明一實施方式，提供一種微電 子機械系統傳聲器，包括：矽基板，形成有背腔；支撐板， 蒸鍍在該矽基板，形成有多個音孔；膜，以與該支撐板隔 開而形成空隙的方式蒸鍍在該矽基板；以及應力緩衝部[，s] 5 201127088 蒸鍍在該膜和矽基板的接觸部位。 本發明的另一個實施方式，提供一種微電子機械系統 傳聲器的製造方法’包括：在矽基板蒸鍍應力緩衝部的步 驟’在該應力緩衝部蒸鍍膜的步驟；在該膜蒸鍍犧牲層的 步驟’在該犧牲層蒸鍍支撐板而形成多個音孔的步驟；蝕 刻該石夕基板的下側而形成背腔之步驟；以及去除該犧牲 層在該膜和支撐板之間形成空隙的步驟。 士 。本發明再一個實施方式，提供一種微電子機械系統傳 的製造方法’包括：切基板紐支撐板的步驟；在 铲應撐1蒸鍍犧牲層的步驟；在該矽基板的支撐板邊緣蒸 ϋ力緩衝部之步驟；在該應力緩衝部和犧牲層蒸鐘膜的 刻該石夕基板的下側而形成背腔之步驟；以及去除 以犧^層’在該膜和支撐板之間形成空隙的步驟。 本發明的效果如下。 殘儉:據本發明’具有能夠在該膜和⑦基板接觸的部位使 最小化之效果。進而，具有能夠防止在該膜和石夕 暴板的接觸部位產生破裂之效果。 從而^本發明，具有防止因殘餘應力而導致膜的變形’ 月匕句正常進行音壓測定的效果。 溫产）^Θ由於膜和支撐板在低溫（約贼左右的 子機_ 且有能，、，, 曰乃裏成一個晶片的效果。進而’ 之效果。70化的半導體技術製造微電子機械系統傳聲器 201127088 +根據本發明，由於在低溫狀態下製造微電子機械系統 傳聲器’因此具有能夠最小化在該膜和支#板本身殘留有 殘餘應力的絲。進而，具有防止在賴和支撐板與石夕基 板的接觸部位產生破裂之效果。 根據本發明’由於利用非電解錢層法來蒸鑛膜和支揮 板，因此可以容易地調節該膜和支撐板的厚度，從而具有 穩定音響特性和增強音響靈敏度的效果。 。根據本發明，由於在蝕刻矽基板之後透過蒸鍍膜和支 樓板來形成空隙(airgap)’因而具有能夠準確而簡易地形成 ，空隙的效果。進而’具有能夠減小微電子機械系統傳聲 裔的兩度並在基板上穩定地固定膜和支撙板的效果。 【實施方式】 對為了達到上述目的，本發明微電子機械系統傳聲器 的具體實施例進行說明。 σ 器之第一實施例進行 對本發明的微電㈣1¾⑽^ 說明。 傳聲51 la第圖一至第1C圖是表示在本發明的微電子機械系統 严σ之 實施例中，在矽基板形成空隙形成部的程序 之剖面圖。 參照第1 a圖；^ @ κ固 括石夕基板圖，賴電子频线傳聲器包 在該矽基板10的兩侧蒸鍍有如氮化矽（Si3N4) 該氮化夕利用低壓化學汽相蒸錢⑽CVD: l⑽pressi^] 7 201127088201127088 VI. Description of the Invention: [Technical Field] The present invention relates to a microelectromechanical system microphone and a method of manufacturing the same. [Prior Art] Generally, a microphone is a device that converts sound into an electrical signal. The microphone is used for various communication devices such as mobile communication devices such as mobile terminals, earphones or hearing aids. Such microphones should have good electrical/audio performance, reliability and workability. The microphone has a condenser microphone and a MEMS microphone. §Haidian Valley microphones are manufactured by assembling the vibrating plates, the slabs, and the signal processing printed circuit boards, respectively, and assembling the structures inside the casing. Such a condenser microphone is separated from the program for manufacturing a printed circuit board and a program for manufacturing a condenser microphone, so that the production cost is increased and the miniaturization thereof is also limited. The microelectromechanical system microphone uses semiconductor technology to manufacture all of the acoustic sensing component parts such as the vibrating plate and the supporting floor on a stone substrate. A microelectromechanical system microphone is disclosed in Korean Application No. 10-2002-0074492 (Application Date: 2〇〇2年月月27曰). The microelectromechanical system transmits sound in order to inject electrons into the lower electrode, and heat treatment is performed at about 1 1 of the ancient and the fields. At this time, since the film (vibration plate) is substantially composed of a different material such as a metallic lower electrode, a Nisshin nitride film, and a tantalum oxide film, residual stress (compressive stress) is generated due to a difference in thermal expansion coefficient during heat treatment of sorghum 3 201127088 Or expansion stress). As the film is subjected to residual stress, it may be deformed or cracked. Further, when residual stress is applied to the film, the film hardly vibrates correctly with the sound, and thus it is difficult to correctly convert the generated sound into an electric signal. Further, since the microphone adjusts the thickness of the film by the lower side of the substrate, it is possible to make the thickness of the film uneven. When the thickness of the film is not uniform, the vibration of the film to the sound is irregular, and it may be difficult to correctly convert the sound into an electric signal.微 A method of manufacturing a microelectromechanical system microphone that forms a back oxide volume is disclosed in International Publication No. WO2007/U2743 (Publication Date: 2〇〇7, 〇 March 29). At this time, in order to form the back volume 15 on the crucible substrate, the porous crucible structure 9 is oxidized, and a crucible porous crucible structure is formed to sequentially perform vapor deposition and etching of the conductive layer 2, the metal layer 3, and the Ruth oxide film 4. (la_lh program) and so on. In order to form the porous stone, it is necessary to perform a plurality of procedures. Thus, the time of the microelectromechanical system microphone can be significantly increased. Further, since the enthalpy of the porous structure 9 according to the voltage condition may have an uneven oxidation rate, it is also possible to unevenly close the back. When the surface side of the material volume is uneven, the distance between the film and the back volume becomes uneven, so that it is difficult to accurately convert the sound into an electric signal. Further, the difference between the thermal expansion coefficient of the diaphragm and the tantalum substrate or tantalum oxide is large. However, since the vibrating membrane is in contact with the crucible substrate through the tantalum oxide film, the portion where the vibrating membrane and the crucible substrate are in contact with each other due to the difference in thermal expansion coefficient can be cracked. Further, the two comparative documents are in the structure of the laminate substrate and the support plate, so that the height of the microelectromechanical system microphone will only become high. Therefore, there is a limit to the manufacture of miniaturized microphones. SUMMARY OF THE INVENTION In order to solve the above problems, an object of the present invention is to provide a microelectromechanical system microphone capable of minimizing residual stress at a portion where a film is in contact with a ruthenium substrate, and a method of manufacturing the same. Another object of the present invention is to provide a microelectromechanical system microphone which does not require heating at a high temperature for adsorbing ions on a film and a support plate, and a method of manufacturing the same. Another object of the present invention is to provide a structure in which a planarization process of a sacrificial layer can be easily performed as compared with a structure in which a film and a support plate are laminated on an upper side of a ruthenium substrate, and the thickness of the film and the support plate can be freely adjusted, thereby A microelectromechanical system microphone capable of improving the acoustic characteristics of a microphone and a method of manufacturing the same. It is still another object of the present invention to provide a microelectromechanical system microphone which can reduce the height of the microelectromechanical system microphone above the spacing between the membrane and the support plate and a method of manufacturing the same. An embodiment of the present invention for achieving the above object provides a microelectromechanical system microphone comprising: a ruthenium substrate formed with a back cavity; a support plate evaporated on the ruthenium substrate to form a plurality of sound holes; a film to The support plates are vapor-deposited on the ruthenium substrate so as to form a gap therebetween, and the stress buffer portion [, s] 5 201127088 is deposited on the contact portion between the film and the ruthenium substrate. Another embodiment of the present invention provides a method for manufacturing a microelectromechanical system microphone, which includes the steps of: evaporating a film in the stress buffer portion in a step of depositing a stress buffer portion on a germanium substrate; and depositing a sacrificial layer on the film a step of forming a plurality of sound holes by evaporating a support plate in the sacrificial layer; a step of etching a lower side of the substrate to form a back cavity; and removing the sacrificial layer to form a gap between the film and the support plate step. Shi. According to still another embodiment of the present invention, there is provided a method for manufacturing a microelectromechanical system, comprising: a step of cutting a substrate support plate; a step of depositing a sacrificial layer on the shovel 1; and evaporating at a side of the support plate of the ruthenium substrate a step of forming a back buffer in the stress buffer portion and the sacrificial layer vapor film; and removing the gap between the film and the support plate A step of. The effects of the present invention are as follows. Residue: According to the present invention, there is an effect of being able to minimize the contact between the film and the 7 substrate. Further, it has an effect of preventing cracking at the contact portion between the film and the slab. Therefore, the present invention has an effect of preventing the deformation of the film due to residual stress, and the sound pressure measurement is normally performed. Temperature production) ^ Θ Because the film and the support plate are at a low temperature (about the thief's sub-machine _ and there is energy,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, System microphone 201127088 + according to the present invention, since the microelectromechanical system microphone is manufactured at a low temperature state, it has a wire capable of minimizing residual stress remaining on the film and the plate itself. Further, it has a function of preventing the support and the support plate. The contact portion of the Shixi substrate produces an effect of cracking. According to the present invention, since the film and the support plate are vaporized by the electroless gold layer method, the thickness of the film and the support plate can be easily adjusted, thereby having stable acoustic characteristics and The effect of enhancing the acoustic sensitivity. According to the present invention, since the vapor deposition film and the slab are formed after the ruthenium substrate is etched to form an air gap, the effect of the void can be formed accurately and easily. The electromechanical system transmits the effect of the film and the support plate on the substrate twice, and the effect of the film and the support plate is stabilized on the substrate. To achieve the above object, a specific embodiment of the microelectromechanical system microphone of the present invention will be described. The first embodiment of the sigma apparatus performs the description of the micro-electric (4) 13⁄4(10)^ of the present invention. The sound transmission 51 la is shown in the first to the first embodiment of the present invention. In the embodiment of the microelectromechanical system strict σ, a cross-sectional view of a procedure for forming a void-forming portion on a tantalum substrate is referred to in Fig. 1a; ^ @ κ 固石石夕基板图, Lai electronic frequency line microphone is packaged in the crucible Both sides of the substrate 10 are vapor-deposited such as tantalum nitride (Si3N4), which is vaporized by low-pressure chemical vapor phase (10) CVD: l(10)pressi^] 7 201127088
Chemical Vapor Deposition)在矽基板1〇的表面蒸鍍保護層 11 、 12 ° 該矽基板10的上側之絕緣保護層u為形成空隙形成 部15而被蝕刻（參照第lb圖）。此時，該矽基板1〇的上 側絕緣保δ蒦層11可以利用RIE(Reactive Ion Etching)裝置來 #刻。 參照第lc圖，利用KOH溶液或TMAH溶液蝕刻該矽 基板10的上侧，以已設定的深度形成該空隙形成部15。 此時，作為該空隙形成部15的掩模物質（未圖示）可 以適用氮化矽（Si#4)或氧化矽（Si〇2)等。 透過將該空隙形成部15深度D調節成已設定的深度， 能夠調節以下要說明的膜25和支撐板37之間的間距。該 空隙形成部15的深度D可以根據KOH溶液或TMAH溶液 的》辰度、敍刻時間及溫度等進行調節。該KQH溶液或 TMAH溶液的濃度、蝕刻時間及溫度等需要根據空隙形成 部的深度適當地調節。 另外，利用KOH溶液或TMAH溶液進行蝕刻時，該 空隙形成部15的邊緣形成具有約54.74。的角度“之傾斜面 16。此時’在矽結晶的傾斜方向（111面方向）上與 溶液或TMAH溶液的反應速度相對慢，在矽結晶垂直方向 (1〇〇方向）上與K0H溶液或TMAH溶液的反^速度相對 快。從而，該空隙形成部15的邊緣被蝕刻成具有傾斜面 第2a圖至第2c圖是表示在第lc圖的石夕基板之空卩审形 成部蒸鑛應力緩衝部的程序之剖面圖。 201127088 參照第2a圖至第2C圖， 15之上側蒸鍍應力緩衝部2〇 緩衝部20的上側蒸鑛膜25。 在該矽基板10的空隙形成部 。在該空隙形成部15和應力 該應力緩衝部20透過以下程序形成。 在該石夕基板1G的空隙形成部15表面塗敷感光 物質2】。透過曝光及顯影該感光性掩模物質^，圖妒化 (Pining )用於形成該應力緩衝部2〇的區域❿（來昭 第2a圖）。在所述用於形成該應力緩衝部2〇的區域2。蒸 鑛應力緩衝部2G (參照第2b圖）。然後，去除該感光性掩 模物質（參照第2c圖）。 該應力緩衝部20可以由熱膨脹係數不同的多個物質層 構成。例如’該應力緩衝部20可以由鉻20a(Cr)、金2〇b(Au) 及聚醯亞胺20c(Polyimide)等疊層而形成。 此時’從該矽基板10起，該多個物質層20a、20b、20c 的熱膨脹係數可以越靠近膜25越大。對此參照以下表格進 行詳細說明。下述“表”中E表示彈性模數（young，s modulus)，a表示熱膨脹係數。 表 物質 E (Gpa) a (ppm/t) Aa (ppm/°C ) AaE (MPa/°C) 密度 (g/cm3) 屈服強度 (Possion's Ratio ) 熱傳導係數 (W/mK) 厚度 (um) Si 178 2.6 - - 2.33 0.28 141 395 Ni 200 13.4 -10.8 -2.16 8.89 0.31 90.9 0.3 PI 2.5 35 -32.4 -0.081 1.43 - 0.52 1 Au 78 14.2 -1 1，6 -0.90 19.32 0.42 315 0.3 Cr 279 4.9 -2.3 -0.64 7.19 0.21 93.9 0.05 從該石夕基板向膜25侧可以以鉻（熱膨脹係數4.9)[、S] 9 201127088 金（熱膨脹係數14.2)及聚醯亞胺（熱膨脹係數35)的順 序疊層。這裡，矽基板的熱膨脹係數為2.6，作為矽基板的 保護層之氮化矽的熱膨脹係數為2.7,鎳膜的熱膨脹係數為 13.4。 該應力缓衝部20在該膜25振動時，透過應力缓衝部 20的緩衝作用防止在該膜25和矽基板10的接觸部位產生 破裂。 第3a圖及第3b圖是表示在第2C圖的矽基板之空隙形 成部蒸鍍膜的程序之剖面圖。 參照第3a圖及第3b圖，在該矽基板10的空隙形成部 15和應力緩衝部20的上侧蒸鍍膜25。此時，在該膜25形 成能夠使空氣通過的空氣通過孔25a (參照第3a圖）。該膜 25是隨音壓而振動的振動板，並且是測定靜電容量的電容 之下部電極。 該膜.25可以透過非電解鑛層法(electroless plating)進 行蒸鍵。 這裡，非電解鍍層法是不從外部接受電能供給，依靠 還原劑還原金屬離子，在矽基板的表面上析出金屬之方 法。這種非電解鍍層法與電鍍法相比，能夠使膜25的厚度 整體上均勻，另外在具有曲折的面上也能夠容易形成膜25。 該膜25的非電解鍍層法透過以下過程而形成。 首先，在形成有該空隙形成部15的矽基板10之表面 塗敷感光性掩模物質21。透過曝光及顯影該感光性掩模物 質21，圖形化用於形成膜25的區域。為進行鎳非電解鍍層s] 201127088 使該圖形化的石夕表面被表面活性化。在該被表面活性化的 矽基板10之表面，透過非電解鍍層法形成鎳膜25(參照第 3a圖）。开>成該鎳膜25之後去除該感光性掩模物質21 (泉 照第3b圖）。最後’清洗該膜25的表面。 另外，由於該膜25透過非電解鍍層在約9〇t：左右低溫 下還原置換導電性離子等’從而無需為了蒸鍍該膜25而像 現有技術那樣以約11 〇〇°c左右的高溫進行加熱。 另外，由於該膜25由金屬性材料構成，因而能夠與測 定靜電容量的外部電路（例：ASIC晶片）電連接。因此， 不用像現有技術那樣的在聚石夕材料的膜層注入導電性離 子，所以不用在膜層進行另外的高溫加熱程序，從而能夠 減少製造程序。 另外’即使該膜25和矽基板1〇的熱膨脹係數存在差 異’但由於不用高溫加熱’因而在該膜25和石夕基板10的 接觸部位上，在非電解鍍層程序中幾乎不會產生作為殘餘 應力（residual stress)的壓力（compressive stress)或張應力 (tensile stress)。結果，該膜25幾乎不會因殘餘應力而變形， 因而能夠使該膜25正常振動從而穩定音響特性。另外，在 該膜和矽基板的接觸部位幾乎不產生殘餘應力，從而能夠 防止在該矽基板和膜的接觸部位上產生破裂。 與此相較，現有這樣透過電錄層法形成膜25時’需要 在矽基板的表面蒸鍍種子層（seed layer)之後通電。在該種 子層上電流強度分佈不均勻’以部分不均勻的強度分佈。 此時，在該膜25上導電性離子以不均勻的厚度鍍金，因枨] 201127088 "玄膜25的厚度有可能整體上不均勻。但是，本發明非電解 鍛層决對於膜不存在電流密度差，因而膜的厚度整體上均 勻。 另外’作為該膜25可以適用包含鎳的軟性導電性材 料。由於該膜25是導電性材料，因此該膜25可以導電。 、~r~* ’由於該膜25是軟性材料，因而能夠防止當該膜25 因過電流而振動或受到外部衝擊而破損。 另外’ δ玄膜25的厚度可以形成為約〇. 1〜5歸的厚度。 該膜25的厚度可以根據微電子機械系統傳聲器所感知的音 壓而調節成適當厚度。 另夕卜 ^ 富電錢該膜25時，由於首先透過嘴賤(sputter) 子束(E-beam)從該空隙形成部15的上側向下側以構成 此時垂直或略微傾斜的狀態喷射鍍金用金屬蒸汽(vapor)。 甘帶在邊空隙形成部15的傾斜面16不會存在該膜25和 具電極（去闰-\ 25時，/不）短路的危險。但是，當非電解鍍層該膜 該膜和复^便f具有曲折的面上也能夠容易蒸鍍，因而 一電極（未圖示）不短路而容易連接。 ί^Ι ΤΎ 和支樓板的程序之4=表示在第％圖的膜上蒸鑛犧牲層 參照策4 時，由於該犧Lm’ *該空隙形成部15蒸鑛犧牲層33。此 空隙形成部^ ㈣轉度關切基板上的 其他層。從而蒸鐘該犧牲層而蒸輪 也夠谷易地蒸鍍犧牲層且減少 該犧牲層33 L 衣以％序。 3的上面能夠與秒基板1G的上面構成同％Chemical Vapor Deposition) The surface of the ruthenium substrate 1 is deposited with a protective layer 11 and 12°. The insulating protective layer u on the upper side of the ruthenium substrate 10 is etched by forming the void formation portion 15 (see Fig. 1b). At this time, the upper insulating δ layer 11 of the ruthenium substrate 1 can be engraved by a RIE (Reactive Ion Etching) device. Referring to Fig. 1c, the upper side of the ruthenium substrate 10 is etched by a KOH solution or a TMAH solution, and the void formation portion 15 is formed at a predetermined depth. At this time, as the mask material (not shown) of the void forming portion 15, tantalum nitride (Si #4) or yttrium oxide (Si 〇 2) or the like can be applied. By adjusting the depth D of the gap forming portion 15 to a set depth, the pitch between the film 25 and the support plate 37 to be described later can be adjusted. The depth D of the void forming portion 15 can be adjusted in accordance with the "length", the characterization time, the temperature, and the like of the KOH solution or the TMAH solution. The concentration, etching time, temperature, and the like of the KQH solution or the TMAH solution need to be appropriately adjusted in accordance with the depth of the void formation portion. Further, when etching is performed using a KOH solution or a TMAH solution, the edge of the void forming portion 15 is formed to have about 54.74. The angle of the "inclined surface 16. At this time, the reaction speed with the solution or TMAH solution in the oblique direction of the crystallization of the ruthenium (111 surface direction) is relatively slow, and in the vertical direction of the ruthenium crystal (1 〇〇 direction) with the K0H solution or The reverse speed of the TMAH solution is relatively fast. Thus, the edge of the void-forming portion 15 is etched to have an inclined surface. FIGS. 2a to 2c are diagrams showing the vapor-bearing stress in the empty-formed portion of the Shixi substrate in the lcth diagram. A cross-sectional view of the program of the buffer portion. 201127088 Referring to FIGS. 2a to 2C, the upper side vapor deposition film 2 of the buffer portion 20 is vapor-deposited on the upper side of 15 . The void forming portion of the crucible substrate 10 is formed. The void forming portion 15 and the stress buffer portion 20 are formed by the following procedure: The photosensitive material 2 is applied to the surface of the void forming portion 15 of the litmus substrate 1G. The photosensitive masking material is exposed and developed. (Pining) a region 形成 (Fig. 2a) for forming the stress buffering portion 2A. The region 2 for forming the stress buffering portion 2A. The vaporizing stress buffering portion 2G (refer to FIG. 2b) Then, removing the photosensitive mask The stress buffering portion 20 may be composed of a plurality of material layers having different thermal expansion coefficients. For example, the stress buffering portion 20 may be composed of chromium 20a (Cr), gold 2〇b (Au), and polyfluorene. The imine 20c (Polyimide) or the like is laminated and formed. At this time, the thermal expansion coefficient of the plurality of material layers 20a, 20b, and 20c may be larger from the ruthenium substrate 10 as it is closer to the film 25. For details, refer to the following table. Note: In the following “table”, E denotes the modulus of yo and s modulus, and a denotes the coefficient of thermal expansion. Table E (Gpa) a (ppm/t) Aa (ppm/°C) AaE (MPa/°C) Density (g/cm3) Possion's Ratio Thermal Conductivity (W/mK) Thickness (um) Si 178 2.6 - - 2.33 0.28 141 395 Ni 200 13.4 -10.8 -2.16 8.89 0.31 90.9 0.3 PI 2.5 35 -32.4 - 0.081 1.43 - 0.52 1 Au 78 14.2 -1 1,6 -0.90 19.32 0.42 315 0.3 Cr 279 4.9 -2.3 -0.64 7.19 0.21 93.9 0.05 From the stone substrate to the film 25 side, chromium (coefficient of thermal expansion 4.9) [, S ] 9 201127088 Gold (thermal expansion coefficient 14.2) and polyimine (coefficient of thermal expansion 35) sequential stacking. Here, the heat of the crucible substrate Expansion coefficient is 2.6, the thermal expansion coefficient of silicon nitride as a protective layer of silicon substrate is 2.7, the thermal expansion coefficient of the nickel film was 13.4. When the film 25 vibrates, the stress buffering portion 20 prevents cracking at the contact portion between the film 25 and the ruthenium substrate 10 by the buffering action of the stress buffering portion 20. Figs. 3a and 3b are cross-sectional views showing a procedure for depositing a vapor deposition film in the void formation portion of the tantalum substrate of Fig. 2C. Referring to Figs. 3a and 3b, the film 25 is deposited on the upper side of the void-forming portion 15 and the stress buffer portion 20 of the ruthenium substrate 10. At this time, the film 25 is formed with an air passage hole 25a through which air can pass (see Fig. 3a). The film 25 is a vibration plate that vibrates with sound pressure, and is a lower electrode of a capacitance for measuring an electrostatic capacity. The film .25 can be steamed through electroless plating. Here, the electroless plating method is a method in which metal is not supplied from the outside, and metal ions are reduced by a reducing agent to precipitate a metal on the surface of the crucible substrate. Such an electroless plating method can make the thickness of the film 25 uniform as a whole as compared with the plating method, and can easily form the film 25 on a surface having a meandering. The electroless plating method of the film 25 is formed by the following process. First, the photosensitive mask material 21 is applied onto the surface of the ruthenium substrate 10 on which the void formation portion 15 is formed. The photosensitive masking material 21 is exposed and developed to pattern a region for forming the film 25. For the purpose of performing nickel electroless plating s] 201127088, the patterned surface is surface-activated. On the surface of the surface-activated ruthenium substrate 10, a nickel film 25 is formed by an electroless plating method (see Fig. 3a). After the nickel film 25 is opened, the photosensitive mask material 21 is removed (Fig. 3b). Finally, the surface of the film 25 is cleaned. Further, since the film 25 is reduced in the electroless plating layer at a low temperature of about 9 〇t: to replace the conductive ions or the like, it is not necessary to perform the high temperature of about 11 〇〇 ° C as in the prior art for vapor deposition of the film 25 . heating. Further, since the film 25 is made of a metallic material, it can be electrically connected to an external circuit (for example, an ASIC wafer) for measuring the electrostatic capacitance. Therefore, it is not necessary to inject conductive ions into the film layer of the polylithic material as in the prior art, so that it is not necessary to perform another high-temperature heating process on the film layer, so that the manufacturing process can be reduced. In addition, even if there is a difference in the coefficient of thermal expansion between the film 25 and the ruthenium substrate 1 但, but since it is not heated at a high temperature, there is almost no residue in the electroless plating process at the contact portion of the film 25 and the slab substrate 10 . Responsive stress or tensile stress. As a result, the film 25 is hardly deformed by the residual stress, so that the film 25 can be normally vibrated to stabilize the acoustic characteristics. Further, almost no residual stress is generated at the contact portion between the film and the ruthenium substrate, so that cracking at the contact portion between the ruthenium substrate and the film can be prevented. On the other hand, when the film 25 is formed by the electro-acoustic layer method as described above, it is necessary to electrify after depositing a seed layer on the surface of the ruthenium substrate. The current intensity distribution on the seed layer is not uniform' with a partially uneven intensity distribution. At this time, the conductive ions on the film 25 are plated with gold in a non-uniform thickness, and the thickness of the black film 25 may be uneven as a whole. However, the electroless forged layer of the present invention does not have a difference in current density for the film, and thus the thickness of the film is uniform as a whole. Further, as the film 25, a soft conductive material containing nickel can be applied. Since the film 25 is a conductive material, the film 25 can be electrically conductive. Since the film 25 is a soft material, it is possible to prevent the film 25 from being broken by an overcurrent or being damaged by an external impact. Further, the thickness of the δ 玄 film 25 may be formed to a thickness of about 1 to 5 Å. The thickness of the film 25 can be adjusted to an appropriate thickness in accordance with the sound pressure perceived by the microelectromechanical system microphone. In addition, when the film 25 is rich in electricity, the gold plating is first performed from the upper side to the lower side of the gap forming portion 15 through the sputter beamlet (E-beam) at a state where it is vertically or slightly inclined at this time. Use metal vapor. The stalk of the stalk on the inclined surface 16 of the side gap forming portion 15 does not have a risk of short-circuiting the film 25 and the electrode (when the 闰--25 is removed). However, in the case of the electroless plating layer, the film and the surface having the meandering f can be easily vapor-deposited, so that one electrode (not shown) can be easily connected without short-circuiting. 4 程序 ΤΎ 支 支 支 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = This void forming portion (4) is concerned with other layers on the substrate. Thereby, the sacrificial layer is steamed and the steaming wheel is also capable of vapor-depositing the sacrificial layer and reducing the sacrificial layer 33 L in %. The upper surface of 3 can be the same as the upper surface of the second substrate 1G.
v --j J 201127088 平面之方式蒸鑛。此時’當該犧牲層33為黏性相對高的物 質時’可以透過化學機械研磨（CMP: Chemical Mechanical P〇UShing)使該犧牲層33的表面平滑。另外，當該犧牲層 33為黏性相對低的物質時，由於該犧牲層％的表面平滑因 而不用另外進行該化學機械研磨。 該犧牲層33可以由氧化矽、光致抗蝕劑 '鍍金銅等材 料形成。 參照第4b圖’該支樓板37可以以非電解鍵層方式 (electroless plating)蒸鍍在犧牲層33的上側。該支撐板37 能夠以約2〜100 _的厚度蒸鍍。這樣的支撐板37以對置於 膜25的方式設置、測定靜電容量的電容之上部電極。 該支撐板37的非電解鍍層法透過以下過程形成。首 先，在該犧牲層33的表面塗敷感光性掩模物質（未圖示）。 曝光及顯影該感光性掩模物質，圖形化用於形成支撐板37 的區域。此時，用於形成該支撐板37的區域具有能夠形成 多個音孔38之形狀。為進行鎳非電解鑛層使該圖形化的支 樓板37區域被表面活性化。在該被表面活性化的支樓板” 區域之表面，透過非電解鍍層法蒸_切板37。形成該 鎳支撑板37之後’切該感光性掩模物f，形成該支樓板 37。最後，清洗該支擇板37的表面。這種支撐板37的非 電解鍍層法實質上與上述膜25的非電解鍍層法幾乎相同。 由於該支樓板37透過非電解錢層在約航左右的低 溫下還原置換導電性離子等，從而無需為了蒸㈣支撐板 37而像現有㈣«以約i 1G(rc左右的高溫進行加熱。兩] 201127088 外，由於該支撐板37由金屬性材料構成，因而能夠與測定 靜電容量的外部電路（例：ASIC晶片）電連接。因此，不 用像現有技術那樣的在聚矽材料的膜層注入導電性離子， 所以不用進行現有技術那樣的在聚矽注入金屬性離子，也 不用進行另外的高溫加熱程序，從而能夠減少製造程序。 另外，即使該支撐板37和矽基板1〇的熱膨脹係數存 在差異，但由於不用高溫加熱，因而在該支撐板37和矽基 板10的接觸部位上幾乎不會產生作為殘餘應力（residual stress)的壓力（compressive stress)或張應力（tensile stress)。 結果，該支撐板37幾乎不會因殘餘應力而變形，從而能夠 穩定音響特性。另外，該支撐板37和矽基板1〇之間幾乎 不產生殘餘應力，從而能夠防止在該支撐板37和矽基板1〇 接觸部位上產生破裂（crack)。 與此相較，現有這樣的透過電鍍層法形成支撐板37 時’需要在矽基板的表面蒸鍍種子層（seed layer)之後通 電。在泫種子層上電流以不均勻的強度分佈。此時，在該 支撐板37上導電性離子以不均勻的厚度鍍金，該支撐板w 的厚度有可能整體上不均勻。 另外該支撐板3 7可以由包含鎳的軟性導電性持， 成。由於該支撐板37是導電性材料，因此該支撐板^形 以導電。進而，由於該支撐板37是軟性材料，因而能=可 止該支撑板受到外部衝擊時該支撐板的破損。 ％句防 第5a圖至第5c圖是表示在第仆圖的矽基板形北 和空隙的程序之剖面圖。 乂 ^^ 14 201127088 參照第5a圖至第5b圖，在該矽基板1〇下側的絕緣保 護層12塗敷感光性掩模物質（未圖示）。透過曝光及顯影 該感光性掩模物質，圖形化用於形成背腔41的區域（參照 第5a圖）。 用於形成該背腔41的區域能夠透過K〇H溶液或 TMAH溶液而被異向性濕蝕（參照第5b圖）。此時，作為 掩模物質能夠使錢切、二氧化#、感光性物f、金或 鉻。 另外’用於形成該背腔41的區域可以透過深反應離子 餘刻法(DRIE: Deep Reactive Ion Etching)被異向性乾姓。此 時，作為掩模物質能夠使用氮切、二氧化⑦、感光性物 質、金或絡。 如此Ik著石夕基板1〇的下側被姓刻，在該膜h的下 側形成背腔41。 參照第5C圖，透過該支撐板37的音孔38餘刻並去除 該犧牲層33。此時’隨著該犧牲層％被去除，該膜25和 支樓板37之間形成空隙45。當向該膜25施加音壓時，該 空隙45使該膜25以不與支樓板37接觸的方式振動。 該空隙45的間距可以根據該空隙形成部15之餘刻深 度和該犧牲層33的蒸鍍厚度而事先設定。因此，該膜Μ 和支樓板37可以紐在_基板1()的内部或表面而不是 石夕基板ΙΟ〆的上側。結果，本發明與現有技術相比可以將微 電子機械系統傳聲n高度降低到切板37和膜25高度左 右的高度。 201127088 另外，當在該膜25施加音壓時，該膜25的空氣通過 孔25a使空氣通過該空隙45和背腔41，從而使在該背腔 41形成與大氣壓幾乎相同的壓力。進而，能夠使音壓正常 施加於該膜25。 對如上述結構構成的微電子機械系統傳聲器之作用進 行說明。 第6圖是用於說明膜和應力緩衝部的作用之概要圖。 參照第6圖，該微電子機械系統傳聲器在該膜25隨音 壓振動時，該膜25和支撐板37之間空隙45的間距發生變 化。此時，隨該空隙45的間距之變化靜電容量發生變化， 透過變化的靜電容量將聲音轉換成電信號。 此時，當在該膜25存在殘留的壓縮應力（compressive stress)時，在膜25振動或不振動時，該應力缓衝部20都緩 衝該膜25的壓縮應力。 另外，當該膜25存在殘留的張應力時，在膜25振動 或不振動時，該應力緩衝部20都緩衝該膜25的張應力。 從而，該應力緩衝部20能夠解除在膜25和矽基板10 接觸部位產生的緩衝應力。另外，該應力緩衝部20能夠防 止由殘餘應力導致膜25的變形，使音響感應正確。 另外，上述的微電子機械系統傳聲器透過調節空隙形 成部15的蝕刻深度，能夠調節該膜25和支撐板37之間的 空隙45。v --j J 201127088 The way of steaming in the plane. At this time, when the sacrificial layer 33 is a material having a relatively high viscosity, the surface of the sacrificial layer 33 can be made smooth by chemical mechanical polishing (CMP: Chemical Mechanical P〇 UShing). Further, when the sacrificial layer 33 is a substance having a relatively low viscosity, the surface of the sacrificial layer is smoothed because the chemical mechanical polishing is not additionally performed. The sacrificial layer 33 may be formed of a material such as ruthenium oxide or photoresist 'gold plated copper. Referring to Fig. 4b', the slab 37 may be vapor-deposited on the upper side of the sacrificial layer 33 by electroless plating. The support plate 37 can be deposited at a thickness of about 2 to 100 Å. Such a support plate 37 is provided so as to face the film 25 and measure the capacitance of the upper electrode. The electroless plating method of the support plate 37 is formed by the following process. First, a photosensitive mask material (not shown) is applied to the surface of the sacrificial layer 33. The photosensitive mask material is exposed and developed, and patterned to form a region of the support plate 37. At this time, the region for forming the support plate 37 has a shape capable of forming a plurality of sound holes 38. The patterned land 37 region is surface activated for the nickel electroless ore layer. On the surface of the surface of the surface-activated floor panel, the plate 37 is evaporated by an electroless plating method. After the nickel support plate 37 is formed, the photosensitive mask f is cut to form the branch plate 37. Finally, The surface of the support plate 37 is cleaned. The electroless plating method of the support plate 37 is substantially the same as the electroless plating method of the film 25. Since the support plate 37 passes through the non-electrolytic layer at a low temperature around the air By reducing or replacing the conductive ions and the like, it is not necessary to heat the (four) support plate 37 as in the conventional (four) «heating at a high temperature of about i 1 G (about rc. 2) 201127088, since the support plate 37 is made of a metallic material, It is electrically connected to an external circuit (for example, an ASIC wafer) for measuring the electrostatic capacity. Therefore, it is not necessary to inject conductive ions into the film layer of the polyfluorene material as in the prior art, so that it is not necessary to implant a metal ion in the polyfluorene as in the prior art. There is no need to perform another high-temperature heating process, so that the manufacturing process can be reduced. In addition, even if there is a difference in thermal expansion coefficient between the support plate 37 and the crucible substrate 1〇, Since high temperature heating is not required, compressive stress or tensile stress as residual stress is hardly generated at the contact portion of the support plate 37 and the crucible substrate 10. As a result, the support plate 37 is almost It is not deformed by the residual stress, so that the acoustic characteristics can be stabilized. Further, almost no residual stress is generated between the support plate 37 and the crucible substrate 1〇, so that it is possible to prevent the contact between the support plate 37 and the crucible substrate 1 at the contact portion. In contrast, in the conventional formation of the support plate 37 by the electroplating method, it is necessary to electrify after depositing a seed layer on the surface of the tantalum substrate. The current on the tantalum seed layer is uneven. In this case, the conductive ions are plated with gold at a non-uniform thickness on the support plate 37, and the thickness of the support plate w may be uneven as a whole. In addition, the support plate 37 may be held by a soft conductive material containing nickel. Since the support plate 37 is a conductive material, the support plate is electrically conductive. Further, since the support plate 37 is a soft material, it can be stopped. The support plate is damaged when it is subjected to an external impact. Fig. 5a to Fig. 5c are sectional views showing the procedure of the north surface and the gap of the 矽 substrate in the servant diagram. 乂^^ 14 201127088 Refer to Fig. 5a In the fifth embodiment, a photosensitive mask material (not shown) is applied to the insulating protective layer 12 on the lower side of the germanium substrate 1. The photosensitive mask material is exposed and developed, and patterned to form the back cavity 41. The area for forming the back cavity 41 can be anisotropically wetted by the K〇H solution or the TMAH solution (see Fig. 5b). In this case, it can be used as a mask substance. Money cut, dioxide #, photosensitive material f, gold or chromium. Further, the region for forming the back cavity 41 can be anisotropically dried by DRIE (Deep Reactive Ion Etching). In this case, nitrogen cutting, sulfur dioxide 7, photosensitive material, gold or complex can be used as the mask material. Thus, the lower side of the substrate 1 is etched by the surname, and the back cavity 41 is formed on the lower side of the film h. Referring to Fig. 5C, the sacrificial layer 33 is left and removed through the sound hole 38 of the support plate 37. At this time, as the sacrificial layer % is removed, a gap 45 is formed between the film 25 and the branch floor 37. When a sound pressure is applied to the film 25, the gap 45 causes the film 25 to vibrate in a manner not to be in contact with the floor panel 37. The pitch of the gap 45 can be set in advance according to the remaining depth of the void forming portion 15 and the vapor deposition thickness of the sacrificial layer 33. Therefore, the film stack and the floor panel 37 can be attached to the inside or the surface of the substrate 1 () instead of the upper side of the substrate. As a result, the present invention can reduce the height of the microelectromechanical system sound transmission n to the height of the cutting plate 37 and the height of the film 25 as compared with the prior art. Further, when the sound pressure is applied to the film 25, the air of the film 25 passes the air through the hole 25a through the gap 45 and the back cavity 41, so that the back cavity 41 is formed with almost the same pressure as the atmospheric pressure. Further, the sound pressure can be normally applied to the film 25. The action of the microelectromechanical system microphone constructed as described above will be explained. Fig. 6 is a schematic view for explaining the action of the film and the stress buffering portion. Referring to Fig. 6, the microelectromechanical system microphone changes the pitch of the gap 45 between the film 25 and the support plate 37 as the film 25 vibrates with the sound pressure. At this time, the electrostatic capacitance changes as the pitch of the gap 45 changes, and the sound is converted into an electrical signal by the changed electrostatic capacitance. At this time, when there is residual compressive stress in the film 25, the stress buffering portion 20 moderates the compressive stress of the film 25 when the film 25 vibrates or does not vibrate. Further, when the film 25 has residual tensile stress, the stress buffering portion 20 buffers the tensile stress of the film 25 when the film 25 vibrates or does not vibrate. Therefore, the stress buffering portion 20 can release the cushioning stress generated at the contact portion between the film 25 and the ruthenium substrate 10. Further, the stress buffering portion 20 can prevent deformation of the film 25 caused by residual stress, and correct acoustic sensing. Further, the above-described microelectromechanical system microphone can adjust the gap 45 between the film 25 and the support plate 37 by adjusting the etching depth of the gap forming portion 15.
另外，由於該膜25和支撐板37用包含鎳的同一物質 蒸鍍，因此程序變得簡單且製造成本降低。 [S 16 201127088 另外，由於該支撐板37和膜25由同—程序蒸鍍在 基板10，因此微電子機械系統傳聲器的製造程序變^ 且能夠顯著地增加產量。 f &早 另外，由於該膜25和支撐板37透過非電解鍍層在低 溫下蒸鍍，因此可以最小化在該矽基板1〇和膜25及支浐 板37的接觸部位上產生殘餘應力。從而，能夠防止該膜= 變形或在接觸部位上產生破裂。另外，能夠簡化製造程 並且減少製造費用。 下面，對本發明微電子機械系統傳聲器的第二實施例 進行說明。 第7圖是表示在本發明的微電子機械系統傳聲器之第 二實施例中在矽基板形成空隙形成部的程序之剖面圖。 參照第7圖，該微電子機械系統傳聲器包括矽基板 50。在該石夕基板50的兩側蒸鏟如氮化石夕（si3N4)或氧化石夕 (Si〇2)等的絕緣保護層51、52。此時，利用低壓化學汽相 蒸鍵（LPCVD: Low Pressure Chemical Vapor Deposition)在 矽基板50的表面蒸鍍絕緣保護層51、52。 該矽基板50上側的絕緣保護層51為了形成空隙形成 部55而被蝕刻。此時，該矽基板50的上侧絕緣保護層51 可以由RIE(Reactive Ion Etching)裝置來敍刻。 利用KOH溶液或TMAH溶液蝕刻該矽基板50的上 側，以已設定的深度D形成該空隙形成部55。此時，作為 該空隙形成部55的掩模物質61可以適用氮化矽（Si3N4)或 氧化矽（Si02)等。 ri 201127088 透過將該空隙形成部55的深度D調節成已設定之深 度’能夠調節以下要說明的膜7 7和支撐板6 5之間的間距^ 這種空隙形成部55的深度能夠由KOH溶液或TMAH溶液 的濃度、蝕刻時間及溫度等決定。 另外，利用KOH溶液或TMAH溶液進行蝕刻時，該 空隙形成部55的邊緣形成具有約54.74。的角度^之傾斜面 56。此時，在矽結晶傾斜方向（111結晶方向）上與〖on 溶液或TMAH溶液的反應速度相對慢，在矽結晶垂直方向 (100結晶方向）上與K0H溶液或TMAH溶液和的反應速 度相對快。從而，該空隙形成部55的邊緣形成傾斜面％。 第8a圖至第8c圖表不在第7圖的石夕基板之空隙形成 部蒸鑛支撐板的程序之剖面圖。 參照第8a圖至第8c圖，在該矽基板50空隙形成部55 的上侧蒸鍍支撐板65。該支撐板65玎透過非電解鍍層法蒸 鍍。这種支撐板65是根據靜電容量來測定振動的電容之下 部電極。 該支撐板65的非電解鍍層法透過以下過程而形成。首 先，在形成有該空隙形成部55的矽基板50之表面塗敷感 光性掩模物質6丨。透過曝光及顯影該感光性掩模物質61， 圖形化用於形成支撐板 65和音孔66的區域（參照第8a 圖）。為進行鎳非電解鍍層使該圖形畫的矽表面之表面活性 化。在忒被表面活性化的矽基板50之表面，透過非電解鍍 層法形成鎳支撐板65 (參照第8b圖）。形成該鎳支撐板65 之後去除錢光性物質（參照第8e _)。最後，清洗該知 201127088 撐板65的表面。 由於該支撐板65透過非電解鍍層在約9(TC左右的低 溫下還原置換導電性離子等，從而無需為蒸鍍該支撐板65 以約ll〇〇°C左右的高溫進行加熱。由於該支撐板65由金屬 性材料構成，因而能夠與测定靜電容量的外部電路（例： ASIC晶片）電連接。因此，不用像現有技術那樣為了在聚 矽注入金屬性離子益使其穩定而進行另外的高溫加熱程 序，從而能夠減少製造程序。 另外，即使該支樓板65和石夕基板50的熱膨脹係數存 在差異，但由於不用高溫加熱’該支撐板65和矽基板50 的接觸部位上幾乎不會產生作為殘餘應力（residual stress) 的壓縮應力（compressive stress)或張應力（tensile stress)。結 果，該支撐板65幾乎不會因殘餘應力而變形，從而能夠防 止在該支撐板65和矽基板50的接觸部位上產生破裂。 與此相較’現有這樣的透過電鍍層法形成支撐板65 時’需要在該石夕基板的表面蒸鍍種子層（seed layer)之後通 電。此時’在該種子層上電流強度以部分不均勻的方式分 佈。此時’在該支撐板上導電性離子以不均勻的厚度鍍金， 因此該支撐板的厚度有可能整體上不均勻。但是，本發明 的非電解鍍層法對支撐板不存在電流密度差，因而支撐板 厚度整體上均勻。 另外’作為該支撐板65可適用包含鎳的軟性導電性材 料。由於該支撐板65是導電性材料，因此該支撐板65可 以導電。另外’由於該支撐板65是軟性材料，因而能夠軟: 19 201127088 止該支撐板65受到外部衝擊*被破損。 另外，該支樓板6S的厚度可以形成 度。該支魏Μ的厚射叫祕電子機〜=== 另外，當電鍍該支撐板65時，由於 (SpUtter)或電子難beam)從該空隙形成部',:濺 側以構成幾乎垂直或略微傾斜的狀態喷射麵全=!: (—)。此時，在該空隙形成部55的傾斜面5== 撐板65和其電極(未圖示)短路的危險。作是=; 鍍層該支撐板65時，由於即便在具有曲折的:上:= 易蒸鍍，因而該切板和其電極(未 == 連接。 不紐路而容易 鐘犧牲層㈣衫切基㈣切板之上侧蒸 愿刀铤衝部的程序之剖面圖。 參照第9a圖，在該空隙形成部55蒸 時，由於該犧牲居π甘& λ 俄往層73。此 6〇的&鍍於則旨定深度D _在碎基板 邛55 ,因而不需要為了蒸鍍該犧牲層73而 蒸鍍或触财他層 师層73而 從而此夠谷易地蒸鍍犧牲層且減少 製造程序。 犧牲層73的上面能夠㈣基板5()的上面構成同一 平面之方式騎。此時，當該犧牲層73為黏性相對高的物 質時可以透過化學機械研磨（CMP: Chemical Mechanical PoHshmg)使該犧牲層73的表面平滑。另夕卜，該犧牲層73 為黏!·生相對低的物質時，由於該犧牲層η的表面平滑因两 20 201127088 不用另外進行化學機械研磨。 該犧牲層73可以由童仆々 料形成。 光致抗蝕劑、鍍金銅等材 參照第9b圖 衝部70。 ’在該犧牲層73 的上側邊緣蒸鑛應力緩 該應力緩衝部70透過以下程序形成。 首先在°亥犧牲層73的表面塗敷咸光性掩模 透過曝光及㈣該感紐掩模㈣1圖形制應 力緩衝部川的區域72a。在該料形成的應力緩衝部成^ 區域仏纽應力緩衝部7〇。然後，去除感光性掩模物質。 §亥應力緩衝部70可以由熱膨脹係數不同的多個物質層 70a、70b、70c形成。例如，該應力緩衝部7〇由鉻7〇a(Cr)、 金70b(Au)及聚酿亞胺7〇c(p〇iyimide)等層積形成。 此時，遠多個物質層70a、70b、70c的熱膨脹係數可 以從該矽基板50越向膜77侧靠近則越大。例如，從該矽 基板50向膜77侧靠近可以以鉻（熱膨脹係數49)，金（熱 膨脹係數14.2)及聚醯亞胺（熱膨脹係數35)的順序疊層。 這裡’矽基板的熱膨脹係數是2.6，作為矽基板的保護層之 氮化矽的熱膨脹係數為2.7，鎳膜的熱膨脹係數為13 4。關 於該物質層的物性如上述“表”所示。 該應力缓衝部70在該膜77振動時，透過多個物質層 70a、70b、70c的緩衝作用來防止在該膜77和梦基板5〇 的接觸部位產生破裂。這種應力緩衝部70的作用與上述實 質相同，因此省略其說明。 ^ 21 201127088 剖面Γ圖疋表不在應力緩衝部和犧牲層蒸鍍膜的程序之 參照第10圖，該膜77可以在犧牲層73的上侧以非電 解鍍層方式蒸鍍。該膜77可以以約0.1〜5卿的厚度蒸鍍。 該膜的非電解料法透過以下過程構成。 一首先’、在雜牲層73的表面塗敷感光性掩模物質（未 圖7F)透過曝光及顯影該感光性掩模物質，圖形化用於形 成膜77的區域。該用於圖形化的膜77區域為進行鎳非電 解鍍層使其表面活性化。在频表㈣性化_ 77區域的 表面透過非電解錢層法形成鎳膜77。形成該鎳膜77之後 去除該感級㈣。最後，清洗簡77的表面。 由於該膜77透過非電解錄層在約9〇t左右的低溫下 還原置換導電性離子等’從而無需為了蒸鍍該膜 77而像現 有技術那樣以約1UKTC左右的高溫進行加熱。 由於S亥膜77由金屬性材料構成，因而能夠與測定靜電 谷量的外部電路（例：ASIC晶片）電連接。因此，不用進 行向該膜77注入金屬性離子，也不用進行另外的高溫加熱 程序。 即使該膜77和矽基板50的熱膨脹係數存在差異，但 由於不用高溫加熱’因而在該膜77和矽基板5〇的接觸部 位上幾乎不會產生作為殘餘應力（residuai stress)的壓縮應 力（compressive stress)或張應力（tensilestress)。結果，該膜 77幾乎不會因殘餘應力而變形，從而能夠防止在該膜77 和石夕基板50的接觸部位上產生破裂。 [ς 22 201127088 另外，該膜77可以由包含鎳的軟性導電性材料形成。 由於該膜77是導電性材料，因而可以通電。另外，由於該 膜77是軟性材料，因而能夠防止過電流或外部衝擊而產生 的破損。 第11a圖及第lib圖是表示在矽基板形成背腔和空隙 的程序之剖面圖。 參照第11a圖，在該矽基板50下側的絕緣保護層52 塗敷感光性掩模物質。透過曝光及顯影該感光性掩模物 質，圖形化用於形成背腔81的區域。 用於形成該背腔81的區域能夠透過KOH溶液或 TMAH溶液而被異向性濕蝕。此時，作為掩模物質能夠使 用氮化矽、二氧化矽、感光性物質、金或鉻。 另外，用於形成該背腔81的區域可以透過深反應離子 姓刻法(DRIE: Deep Reactive Ion Etching)被異向性乾餘。此 時，作為掩模物質能夠使用氮化矽、二氧化矽、感光性物 質、金或鉻。 如此地，隨著矽基板50的下側被蝕刻，在該支撐板65 的下側形成背腔81。 參照第lib圖，透過該支撐板65的音孔66來蝕刻並 去除該犧牲層73。此時，隨著該犧牲層73被去除，該膜 77和支撐板65之間形成空隙85。當向該膜77施加音壓時， 該空隙85使該膜77以不與支撐板65接觸的方式振動。 該空隙85的間距可以根據矽基板50的蝕刻深度和該 空隙形成部55蒸鍍高度而事先設定。因此’該膜77和枭] 23 201127088 撐板65可以蒸鍍在該矽基板50内部或表面而不是矽基板 50上側。結果，本發明與現有技術相比可以將微電子機械 系統傳聲器高度降低到支撐板65和膜77高度左右的高度。 另外，當在該膜77施加音壓時，該膜77的空氣通過 孔77a使空氣通過該空隙85和背腔81，從而使在該背腔 81和空隙85形成與大氣壓幾乎相同的壓力。進而，能夠使 音壓正常施加於該膜77。 上述的微電子機械系統傳聲器透過調節空隙形成部55 的蝕刻深度，能夠調節該膜77和支撐板65之間的空隙85。 另外，由於該膜77和支撐板65用包含鎳的同一物質 蒸鍍，因此程序變得簡單且能夠降低製造成本。 另外，由於該支撐板65和膜77由同一程序蒸鍍在矽 基板50,因此微電子機械系統傳聲器的製造程序變得簡單 且能夠顯著增加產量。 另外，由於該膜77和支撐板65透過非電解鍍層法在 低溫下蒸鍍，因而可最小化在該矽基板50和膜77及支撐 板65的接觸部位上產生殘餘應力。從而，能夠防止該膜77 的變形或在接觸部位上產生破裂。而且，能夠簡化製造程 序並且減少製造费用。 產業上利用的可能性 本發明可以透過減少在膜和支撐板接觸部位上的殘餘 應力而防止破裂產生，因而在產業上有顯著的利用可能性。 【圖式簡單說明】 24 201127088Further, since the film 25 and the support plate 37 are vapor-deposited with the same substance containing nickel, the procedure becomes simple and the manufacturing cost is lowered. [S 16 201127088 In addition, since the support plate 37 and the film 25 are vapor-deposited on the substrate 10 by the same procedure, the manufacturing procedure of the microelectromechanical system microphone is changed and the yield can be remarkably increased. f & In addition, since the film 25 and the support plate 37 are vapor-deposited at a low temperature through the electroless plating layer, residual stress is generated at the contact portion between the tantalum substrate 1 and the film 25 and the support plate 37. Thereby, it is possible to prevent the film from being deformed or cracking at the contact portion. In addition, the manufacturing process can be simplified and the manufacturing cost can be reduced. Next, a second embodiment of the microelectromechanical system microphone of the present invention will be described. Figure 7 is a cross-sectional view showing a procedure for forming a void-forming portion in a ruthenium substrate in a second embodiment of the microelectromechanical system microphone of the present invention. Referring to Fig. 7, the microelectromechanical system microphone includes a crucible substrate 50. On both sides of the Shishi substrate 50, insulating protective layers 51, 52 such as nitride (si3N4) or oxidized stone (Si〇2) are steamed. At this time, the insulating protective layers 51, 52 are deposited on the surface of the ruthenium substrate 50 by a low pressure chemical vapor phase shift (LPCVD: Low Pressure Chemical Vapor Deposition). The insulating protective layer 51 on the upper side of the germanium substrate 50 is etched to form the void forming portion 55. At this time, the upper insulating protective layer 51 of the ruthenium substrate 50 can be etched by a RIE (Reactive Ion Etching) device. The upper side of the ruthenium substrate 50 is etched by a KOH solution or a TMAH solution, and the void formation portion 55 is formed at a set depth D. At this time, as the mask material 61 of the void forming portion 55, tantalum nitride (Si3N4), yttrium oxide (SiO2) or the like can be applied. Ri 201127088 By adjusting the depth D of the gap forming portion 55 to the set depth ', the spacing between the film 7 7 and the support plate 65 to be described below can be adjusted. ^ The depth of the void forming portion 55 can be made of KOH solution Or the concentration of TMAH solution, etching time and temperature, etc. Further, when etching is performed using a KOH solution or a TMAH solution, the edge of the void forming portion 55 is formed to have about 54.74. The angle of the angle ^ is 56. At this time, the reaction rate with the on solution or the TMAH solution is relatively slow in the tilt direction of the ruthenium crystal (111 crystal direction), and the reaction speed with the K0H solution or the TMAH solution is relatively fast in the vertical direction of the ruthenium crystal (100 crystal direction). . Thereby, the edge of the void forming portion 55 forms an inclined surface %. Fig. 8a to Fig. 8c are cross-sectional views showing a procedure for forming a portion of the steam supply support plate in the void of the stone substrate of Fig. 7. Referring to FIGS. 8a to 8c, the support plate 65 is vapor-deposited on the upper side of the void-forming portion 55 of the ruthenium substrate 50. The support plate 65 is vapor-deposited by an electroless plating method. This support plate 65 is a lower electrode of the capacitance which measures vibration according to the electrostatic capacity. The electroless plating method of the support plate 65 is formed by the following process. First, the photosensitive mask material 6 is applied to the surface of the ruthenium substrate 50 on which the void formation portion 55 is formed. The photosensitive mask material 61 is exposed and developed to pattern a region for forming the support plate 65 and the sound hole 66 (refer to Fig. 8a). The surface of the crucible surface of the pattern is surface-activated for nickel electroless plating. A nickel support plate 65 is formed on the surface of the tantalum substrate 50 whose surface is activated by electroless plating (see Fig. 8b). After the nickel support plate 65 is formed, the light-sensitive substance is removed (see 8e_). Finally, the surface of the slab 65 is cleaned. Since the support plate 65 is reduced by electroless plating at about 9 (lower temperature of TC), it is not necessary to heat the support plate 65 at a high temperature of about 11 ° C or so. Since the plate 65 is made of a metallic material, it can be electrically connected to an external circuit (for example, an ASIC wafer) for measuring the electrostatic capacitance. Therefore, it is not necessary to inject a metallic ion into the polyfluorene to stabilize it and to perform another high temperature as in the prior art. Further, even if there is a difference in thermal expansion coefficient between the slab 65 and the slab substrate 50, the contact portion between the support plate 65 and the ruthenium substrate 50 hardly occurs as a result of the difference in thermal expansion coefficient between the slab 65 and the slab substrate 50. Compressive stress or tensile stress of residual stress. As a result, the support plate 65 is hardly deformed by residual stress, thereby preventing contact between the support plate 65 and the crucible substrate 50. A crack occurs in the portion. Compared with the case where the existing support plate 65 is formed by the plating method, it is required to The surface of the plate is vaporized after the seed layer is evaporated. At this time, the current intensity is distributed in a partially uneven manner on the seed layer. At this time, the conductive ions are plated with gold at an uneven thickness on the support plate. Therefore, the thickness of the support plate may be uneven as a whole. However, the electroless plating method of the present invention does not have a difference in current density with respect to the support plate, and thus the thickness of the support plate is uniform as a whole. Further, as the support plate 65, nickel may be used. The flexible conductive material. Since the support plate 65 is a conductive material, the support plate 65 can be electrically conductive. In addition, since the support plate 65 is a soft material, it can be soft: 19 201127088 The support plate 65 is subjected to an external impact* In addition, the thickness of the slab 6S can be formed. The thickness of the slab is called the secret electronic machine ~=== In addition, when the support plate 65 is plated, due to (SpUtter) or electron difficult beam The gap forming portion ': the splash side is formed to be almost vertical or slightly inclined, and the ejection surface is all =!: (-). At this time, the inclined surface 5 of the gap forming portion 55 == the strut 65 and the electrode (not shown) are short-circuited. When the support plate 65 is plated, the cut plate and the electrode thereof are not even if it has a meandering: upper:= easy to vapor deposition (not == connection. It is easy to clock the sacrificial layer (four) shirt base (4) A cross-sectional view of the procedure for steaming the knife squeezing portion on the upper side of the cutting plate. Referring to Fig. 9a, when the gap forming portion 55 is steamed, the sacrificial π 甘 & λ russia layer 73. & plating is then required to have a depth D _ at the substrate 邛 55, so that it is not necessary to vaporize or touch the layer 73 for vapor deposition of the sacrificial layer 73, thereby sufficiently vaporizing the sacrificial layer and reducing Manufacturing Process The upper surface of the sacrificial layer 73 can be mounted in such a manner that the upper surface of the substrate 5 () forms the same plane. At this time, the sacrificial layer 73 can be chemically mechanically polished when it is a relatively viscous substance (CMP: Chemical Mechanical PoHshmg). The surface of the sacrificial layer 73 is smoothed. In addition, the sacrificial layer 73 is viscous! When the material is relatively low, the surface of the sacrificial layer η is smoothed by the two 20 201127088 without additional chemical mechanical polishing. Layer 73 can be formed from a baby servant. Photoresist, gold plated The material is referred to the stamping portion 70 of Fig. 9b. 'The upper side edge of the sacrificial layer 73 is subjected to vapor deposition stress relief. The stress buffer portion 70 is formed by the following procedure. First, a salty photomask is applied to the surface of the sacrificial layer 73. Exposure and (4) the sensation mask (4) 1 pattern stress buffer portion of the region 72a. The stress buffer portion formed in the material is formed into a region 应力 stress buffer portion 〇. Then, the photosensitive mask material is removed. The buffer portion 70 may be formed of a plurality of material layers 70a, 70b, 70c having different thermal expansion coefficients. For example, the stress buffer portion 7 is made of chromium 7〇a (Cr), gold 70b (Au), and polyaniline 7〇c. At this time, the thermal expansion coefficient of the plurality of material layers 70a, 70b, and 70c may be larger as the ruthenium substrate 50 approaches the film 77 side. For example, from the ruthenium substrate 50 toward the ruthenium substrate 50 The film 77 side may be laminated in the order of chromium (coefficient of thermal expansion 49), gold (coefficient of thermal expansion 14.2) and polythenimine (coefficient of thermal expansion 35). Here, the thermal expansion coefficient of the crucible substrate is 2.6, which is a protective layer of the crucible substrate. The thermal expansion coefficient of tantalum nitride is 2.7, and the thermal expansion of the nickel film The number of the material layer is as shown in the above-mentioned "Table". The stress buffering portion 70 is prevented from being in the film by the buffering action of the plurality of material layers 70a, 70b, 70c when the film 77 vibrates. 77. The contact portion of the dream substrate 5 is broken. The action of the stress buffer portion 70 is substantially the same as that described above, and therefore the description thereof is omitted. ^ 21 201127088 The cross-sectional view is not in the procedure of the stress buffer portion and the sacrificial layer vapor deposition film. Referring to Fig. 10, the film 77 may be deposited by electroless plating on the upper side of the sacrificial layer 73. The film 77 may be deposited at a thickness of about 0.1 to 5 angstroms. The non-electrolytic method of the film is constituted by the following process. First, a photosensitive mask material (not shown in Fig. 7F) is applied to the surface of the hybrid layer 73 to expose and develop the photosensitive mask material, and the region for forming the film 77 is patterned. The region of the film 77 used for patterning is surface-activated by performing a nickel non-electrolytic plating layer. A nickel film 77 is formed on the surface of the region of the frequency meter (4) by the electroless gold layer method. This level (4) is removed after the formation of the nickel film 77. Finally, the surface of Jane 77 is cleaned. Since the film 77 is reduced in the electroless recording layer at a low temperature of about 9 Torr or the like, it is not necessary to heat the film 77 at a high temperature of about 1 UKTC as in the prior art. Since the S-wall film 77 is made of a metallic material, it can be electrically connected to an external circuit (for example, an ASIC wafer) for measuring the amount of static electricity. Therefore, it is not necessary to inject metal ions into the film 77, and no additional high-temperature heating process is required. Even if there is a difference in the coefficient of thermal expansion between the film 77 and the ruthenium substrate 50, since the heating is not performed at a high temperature, a compressive stress as a residual stress (residuai stress) hardly occurs at the contact portion of the film 77 and the ruthenium substrate 5 ( (compressive Stress) or tensile stress. As a result, the film 77 is hardly deformed by the residual stress, so that cracking at the contact portion of the film 77 and the stone substrate 50 can be prevented. [ς 22 201127088 In addition, the film 77 may be formed of a soft conductive material containing nickel. Since the film 77 is a conductive material, it can be energized. Further, since the film 77 is a soft material, it is possible to prevent breakage due to an overcurrent or an external impact. Fig. 11a and Fig. lib are cross-sectional views showing a procedure for forming a back cavity and a void in the ruthenium substrate. Referring to Fig. 11a, a photosensitive masking material is applied to the insulating protective layer 52 on the lower side of the ruthenium substrate 50. The photosensitive mask material is exposed and developed to pattern a region for forming the back cavity 81. The area for forming the back cavity 81 can be anisotropically wet etched through the KOH solution or the TMAH solution. At this time, as the mask material, tantalum nitride, cerium oxide, a photosensitive material, gold or chromium can be used. Further, the region for forming the back cavity 81 can be anisotropically dried by DRIE (Deep Reactive Ion Etching). In this case, tantalum nitride, cerium oxide, a photosensitive material, gold or chromium can be used as the mask material. As such, as the lower side of the ruthenium substrate 50 is etched, the back cavity 81 is formed on the lower side of the support plate 65. Referring to the lib diagram, the sacrificial layer 73 is etched and removed through the sound hole 66 of the support plate 65. At this time, as the sacrificial layer 73 is removed, a gap 85 is formed between the film 77 and the support plate 65. When a sound pressure is applied to the film 77, the gap 85 causes the film 77 to vibrate so as not to come into contact with the support plate 65. The pitch of the gap 85 can be set in advance according to the etching depth of the ruthenium substrate 50 and the vapor deposition height of the void formation portion 55. Therefore, the film 77 and the ruthenium plate 23 201127088 can be vapor-deposited inside or on the surface of the ruthenium substrate 50 instead of the upper side of the ruthenium substrate 50. As a result, the present invention can reduce the height of the microelectromechanical system microphone to a height about the height of the support plate 65 and the film 77 as compared with the prior art. Further, when a sound pressure is applied to the film 77, the air of the film 77 passes the air through the hole 77a through the gap 85 and the back cavity 81, so that the back cavity 81 and the gap 85 form almost the same pressure as the atmospheric pressure. Further, the sound pressure can be normally applied to the film 77. The microelectromechanical system microphone described above can adjust the gap 85 between the film 77 and the support plate 65 by adjusting the etching depth of the gap forming portion 55. Further, since the film 77 and the support plate 65 are vapor-deposited with the same substance containing nickel, the procedure becomes simple and the manufacturing cost can be reduced. Further, since the support plate 65 and the film 77 are vapor-deposited on the ruthenium substrate 50 by the same procedure, the manufacturing procedure of the microelectromechanical system microphone becomes simple and the throughput can be remarkably increased. Further, since the film 77 and the support plate 65 are vapor-deposited at a low temperature by the electroless plating method, residual stress is generated at the contact portion between the ruthenium substrate 50 and the film 77 and the support plate 65. Thereby, deformation of the film 77 or cracking at the contact portion can be prevented. Moreover, the manufacturing process can be simplified and the manufacturing cost can be reduced. Industrial Applicability The present invention can prevent cracking by reducing residual stress at the contact portion between the film and the support plate, and thus has a significant industrial utilization possibility. [Simple diagram] 24 201127088
剖面圖。 第2a圖至第2C圖是表示在圖lc 部蒸鍍應力緩衝部的程序之剖面圖。 \lc圖是表示在本發明的微電子機械系統 轭例中在矽基板形成空隙形成部的程序之 lc的矽基板之空隙形成 第3a圖及第3b圖是表示在圖2c 部蒸鍍膜的程序之剖面圖。 的矽基板之空隙形成 第4a圖及第4b圖是表示在圖3b#膜上蒸錢 支撐板的程序之剖面圖。 犧牲層和 '第5a圖至第5e圖是表示在圖仆的⑦基板形成背腔和 空隙的程序之剖面圖。 Φ固 受圖。 第6圖是用於說明圖5c的膜和應力緩衝部的作用之概 第7圖是表示在本發明的微電子機械系統傳聲器之第 二實施例中在矽基板形成空隙形成部的程序之剖面圖。 第8a圖至第8c圖表示在圖7的矽基板之空隙 蒸鍍支撐板的程序之剖面圖。 第9a圖及第9b圖是表示在圖8c的支撐板之上側蒸鍍 犧牲層和應力緩衝部的程序之剖面圖。 第1〇圖是表示在圖9b的應力緩衝部和犧牲層蒸鍍膜 的程序之剖面圖。 第11a圖及第lib圖是表示在矽基板形成背腔和空隙 的程序之剖面圖。 25 201127088 【主要元件符號說明】 10 $夕基板 11 絕緣保護層 12 絕緣保護層 15 空隙形成部 16 傾斜面 20 應力緩衝部 20a 物質層 20b 物質層 20c 物質層 21 感光性掩模物質 22a 區域 25 膜 25a 空氣通過孔 33 犧牲層 37 支撐板 38 音孔 41 背腔 45 空隙 50 $夕基板 51 絕緣保護層 52 絕緣保護層 55 空隙形成部 56 傾斜面 [S] 26 201127088 61 感光性掩模物質 62 感光性掩模物質 65 支撐板 66 音孔 70 應力緩衝部 70a 物質層 70b 物質層 70c 物質層 71 感光性掩模物質 72 感光性掩模物質 72a 區域 73 犧牲層 77 膜 77a 空氣通過孔 81 背腔 85 空隙 a 角度 D 深度 27Sectional view. Fig. 2a to Fig. 2C are cross-sectional views showing the procedure of the vapor deposition stress buffering portion in Fig. 1c. The \lc diagram is a procedure for forming voids in the ruthenium substrate of the lc of the yoke substrate forming the void-forming portion in the yoke of the microelectromechanical system of the present invention. Figs. 3a and 3b are diagrams showing the process of depositing the film in the portion of Fig. 2c. Sectional view. Void formation of the crucible substrate Fig. 4a and Fig. 4b are cross-sectional views showing a procedure for evaporating the support plate on the film of Fig. 3b. The sacrificial layer and '5a to 5e are cross-sectional views showing a procedure for forming a back cavity and a void in the 7 substrates of the servant. Φ solid map. Fig. 6 is a view for explaining the action of the film and the stress buffering portion of Fig. 5c. Fig. 7 is a cross-sectional view showing a procedure for forming a void forming portion in the ruthenium substrate in the second embodiment of the microelectromechanical system microphone of the present invention. Figure. Fig. 8a to Fig. 8c are cross-sectional views showing a procedure for vapor-depositing the support plate in the gap of the ruthenium substrate of Fig. 7. Fig. 9a and Fig. 9b are cross-sectional views showing a procedure for depositing a sacrificial layer and a stress buffering portion on the upper side of the support plate of Fig. 8c. Fig. 1 is a cross-sectional view showing the procedure of the stress buffering portion and the sacrificial layer deposited film of Fig. 9b. Fig. 11a and Fig. lib are cross-sectional views showing a procedure for forming a back cavity and a void in the ruthenium substrate. 25 201127088 [Description of main component symbols] 10 $ substrate 11 insulating protective layer 12 insulating protective layer 15 void forming portion 16 inclined surface 20 stress buffer portion 20a material layer 20b material layer 20c material layer 21 photosensitive mask material 22a region 25 film 25a Air passage hole 33 Sacrificial layer 37 Support plate 38 Sound hole 41 Back cavity 45 Space 50 $ 基板 Substrate 51 Insulating protective layer 52 Insulating protective layer 55 Void forming portion 56 Inclined surface [S] 26 201127088 61 Photosensitive mask substance 62 Photosensitive Masking material 65 Supporting plate 66 Sound hole 70 Stress buffering portion 70a Material layer 70b Material layer 70c Material layer 71 Photosensitive masking material 72 Photosensitive masking substance 72a Area 73 Sacrificial layer 77 Film 77a Air passage hole 81 Back cavity 85 Void a angle D depth 27