JP2008092561A - Semiconductor microphone unit, manufacturing method thereof, and method of mounting semiconductor microphone unit - Google Patents

Semiconductor microphone unit, manufacturing method thereof, and method of mounting semiconductor microphone unit Download PDF

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Publication number
JP2008092561A
JP2008092561A JP2007229269A JP2007229269A JP2008092561A JP 2008092561 A JP2008092561 A JP 2008092561A JP 2007229269 A JP2007229269 A JP 2007229269A JP 2007229269 A JP2007229269 A JP 2007229269A JP 2008092561 A JP2008092561 A JP 2008092561A
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Prior art keywords
substrate
diaphragm
microphone unit
semiconductor microphone
support substrate
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Pending
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JP2007229269A
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Japanese (ja)
Inventor
Junya Suzuki
Toshinao Suzuki
利尚 鈴木
順也 鈴木
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Yamaha Corp
ヤマハ株式会社
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Application filed by Yamaha Corp, ヤマハ株式会社 filed Critical Yamaha Corp
Priority to JP2007229269A priority patent/JP2008092561A/en
Publication of JP2008092561A publication Critical patent/JP2008092561A/en
Application status is Pending legal-status Critical

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Abstract

<P>PROBLEM TO BE SOLVED: To improve sensitivity of a semiconductor microphone chip and prevent strength degradation of a diaphragm by reducing tensile stress of a diaphragm that is generated in manufacturing a semiconductor microphone chip. <P>SOLUTION: In a semiconductor microphone unit 1 having a semiconductor microphone chip 13 in which a diaphragm 25 is provided so as to cover an inside hole 21a of a supporting portion 21, the supporting portion 21 is attached on a surface 15a of a supporting substrate 15 with a thermosetting adhesive 27 while maintaining a state in which the diaphragm 25 faces the surface 15a of the supporting substrate 15 whose thermal expansion coefficient is larger than the supporting portion 21. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor microphone unit including a semiconductor microphone chip, a manufacturing method thereof, and a mounting method of a semiconductor microphone unit in which the semiconductor microphone unit is mounted on a substrate.

Conventionally, a semiconductor microphone chip including a diaphragm that detects pressure fluctuations such as sound by vibration like a silicon condenser microphone is mounted on the surface of a substrate, and constitutes a microphone package together with the substrate (for example, (See Patent Documents 1 and 2.) This semiconductor microphone chip is configured by providing a diaphragm so as to cover the inner hole of the annular support portion.
By the way, this type of semiconductor microphone chip is manufactured by applying a semiconductor device manufacturing process. In this manufacturing process, a polycrystalline silicon film doped with impurities is formed as a diaphragm by CVD (Chemical Vapor Deposition) or the like, but since this film formation is performed at a high temperature, the diaphragm is cooled after the film formation is completed. Then, an internal stress on the tension side is generated.
JP-T-2004-537182 JP-T-2003-508997

However, when there is a tensile stress in the diaphragm as described above, there is a problem in that the amount of flexure of the diaphragm based on pressure fluctuations such as sound is reduced and sensitivity is lowered.
In addition, as a method of reducing this tensile stress, it can be considered that the diaphragm is detached from the support part by attaching the diaphragm to the support part via many springs, but if it is detached, the strength of the diaphragm is reduced. There is also a problem.

  The present invention has been made in view of the above-described circumstances, and can improve the sensitivity of a semiconductor microphone chip and prevent a reduction in the strength of the diaphragm, a manufacturing method thereof, and a semiconductor microphone unit mounted on a substrate. An object of the present invention is to provide a method for mounting a semiconductor microphone unit.

In order to solve the above problems, the present invention proposes the following means.
The invention according to claim 1 is a semiconductor microphone unit including a semiconductor microphone chip in which a diaphragm is provided so as to cover the inner hole of the support portion, and the surface of the support substrate has a larger thermal expansion coefficient than the support portion. A semiconductor microphone unit is proposed in which the support portion is attached to the surface of the support substrate with a thermosetting adhesive with the diaphragms facing each other.

  The invention according to claim 2 is the semiconductor microphone unit according to claim 1, wherein the thermosetting adhesive in a cured state is generated in the support substrate when the semiconductor microphone chip and the support substrate are cooled. A semiconductor microphone unit is proposed that has a tensile elastic modulus that can transmit a contraction force to the support.

When manufacturing the semiconductor microphone unit according to these inventions, the semiconductor microphone chip is attached to the support substrate with a thermosetting adhesive. At this time, the thermosetting adhesive is heated and cured. In this heating, since the semiconductor microphone chip and the support substrate are also heated, the semiconductor microphone chip and the support substrate are stretched. Therefore, the support portion of the semiconductor microphone chip and the support substrate are fixed in the stretched state as described above.
Then, after the thermosetting adhesive is cured and the semiconductor microphone chip and the support substrate are fixed to each other, the semiconductor microphone chip and the support substrate are cooled.

In this cooling, the support substrate contracts to a greater extent than the support portion of the semiconductor microphone chip. However, since the support portion is fixed to the support substrate by a thermosetting adhesive, the support substrate is based on the difference in contraction amount. The shrinkage force is transmitted to the support portion through the thermosetting adhesive.
And since the said contraction force acts in the direction which tries to shrink the diaphragm arrange | positioned facing the surface of a support substrate, the tensile stress of a diaphragm can be relieve | moderated.
Moreover, since the tensile stress can be relieved as described above, it is not necessary to separate the diaphragm from the support portion as in the conventional case, and the strength of the diaphragm can be prevented from being lowered.

  According to a third aspect of the present invention, in the semiconductor microphone unit according to the first or second aspect, a through hole that exposes the diaphragm to the outside through the inner hole is formed in the support substrate. Has proposed a semiconductor microphone unit characterized by

When the semiconductor microphone unit according to the present invention is mounted on the surface of the substrate, the support substrate is attached to the substrate by a separate adhesive (a mounting adhesive described later) with the back surface of the support substrate facing the surface of the substrate. Just paste. In this state, the diaphragm and the substrate face each other through the inner hole and the through hole. Therefore, it is possible to form a cavity that is isolated from the outer space by the inner hole, the through hole, the diaphragm, and the substrate. And since this cavity part becomes large compared with the case where the through-hole is not formed, the volume expansion of a cavity part can be aimed at.
When the volume of the cavity is small, the pressure in the cavity is likely to increase with respect to the vibration of the diaphragm, so that the diaphragm is difficult to bend. However, by increasing the volume of the cavity as described above, Therefore, it is possible to easily prevent the diaphragm from becoming difficult to bend.

  The invention according to claim 4 is a mounting method of a semiconductor microphone unit in which the semiconductor microphone unit according to any one of claims 1 to 3 is mounted on a surface of a substrate, wherein the support substrate is mounted on the substrate. The mounting adhesive in a state where the support substrate is attached to the substrate with the mounting adhesive and cured with the back surface facing each other is based on the difference in thermal expansion coefficient between the support substrate and the substrate. Has proposed a method for mounting a semiconductor microphone unit characterized by having a tensile elastic modulus that can absorb the stress generated in the semiconductor microphone.

In the semiconductor microphone unit mounting method according to the present invention, since the semiconductor microphone unit is mounted on the substrate after the semiconductor microphone unit is configured, even if there is a thermal cycle for heating and cooling the semiconductor microphone unit and the substrate in this mounting, It is possible to prevent the expansion and contraction of the substrate based on the thermal cycle from affecting the semiconductor microphone chip.
That is, when the support substrate and the substrate are attached with a thermosetting mounting adhesive, the semiconductor microphone unit and the substrate are heated to cure the mounting adhesive. At this time, the semiconductor microphone chip, the support substrate, and the substrate are heated to expand.

  Then, after the mounting adhesive is cured and the support substrate and the substrate are fixed to each other, the semiconductor microphone unit and the substrate are cooled. In this cooling, stress is generated between the support substrate and the substrate based on the difference between the thermal expansion coefficients of the support substrate and the substrate. Here, since this stress is absorbed by the mounting adhesive, the support substrate and the substrate are not deformed based on this stress. Therefore, it is possible to easily prevent the semiconductor microphone chip from being deformed when the semiconductor microphone unit is mounted.

  The invention according to claim 5 is to manufacture a semiconductor microphone chip provided with a diaphragm so as to cover the inner hole of the support part, and the diaphragm is opposed to the surface of the support substrate having a larger thermal expansion coefficient than the support part, A method of manufacturing a semiconductor microphone unit is proposed, in which the support portion is attached to the surface of the support substrate with a thermosetting adhesive.

  According to the method of manufacturing a semiconductor microphone unit according to the present invention, as described above, the tensile stress of the diaphragm generated in the manufacture of the semiconductor microphone chip can be reduced when the semiconductor microphone chip is attached to the support substrate.

  According to the first and fifth aspects of the invention, when the support portion of the semiconductor microphone chip is attached to the support substrate, the tensile stress of the diaphragm can be easily relaxed based on the contraction of the support substrate. The sensitivity of the semiconductor microphone chip can be improved. Moreover, the strength reduction of the diaphragm can also be prevented.

  According to the second aspect of the invention, when the thermosetting adhesive is cured and then cooled, the contraction force of the support substrate can be reliably transmitted to the support portion, so that the tensile stress of the diaphragm can be reliably ensured. Can be relaxed.

  According to the third aspect of the invention, it is possible to easily prevent the diaphragm from becoming difficult to bend by increasing the volume of the cavity, and thus it is possible to prevent the sensitivity of the semiconductor microphone chip from being lowered.

  According to the invention which concerns on Claim 4, even if there exists a thermal cycle which heats and cools a semiconductor microphone unit or a board | substrate when mounting a semiconductor microphone unit, it can prevent easily that a semiconductor microphone chip | tip deform | transforms. Therefore, it is possible to easily prevent the diaphragm from being stressed when the semiconductor microphone unit is mounted.

The silicon microphone unit (semiconductor microphone unit) according to the first embodiment of the present invention will be described below with reference to FIGS. As shown in FIG. 1, a silicon microphone unit 1 according to this embodiment is mounted on a surface 3 a of a base substrate (substrate) 3 and covered with a lid 5. And the microphone package 11 is comprised by the cover body 5. FIG. The microphone package 11 is configured to be electrically connected to the circuit board, for example, by mounting the base board 3 on a circuit board (not shown).
The silicon microphone unit 1 includes a silicon microphone chip (semiconductor microphone chip) 13 disposed on the surface 3 a of the base substrate 3, and a support substrate 15 disposed between the silicon microphone chip 13 and the base substrate 3. .

As shown in FIG. 2, the silicon microphone chip 13 is formed of silicon and has an annular support portion 21 having an inner hole 21a having a substantially circular shape in plan view, and a substantially circular plate arranged so as to cover the upper end of the inner hole 21a. And a disk-like diaphragm 25 disposed on the inner hole 21a side of the support portion 21 so as to be substantially parallel to the back plate 23 and to cover the inner hole 21a. The back plate 23 is a conductive semiconductor film formed of, for example, polycrystalline silicon in a substantially disc shape. The back plate 23 has a plurality of through holes 23a penetrating in the thickness direction. Yes. The diaphragm 25 is a conductive semiconductor film in which polycrystalline silicon doped with an impurity such as phosphorus (P) is formed in a disc shape.
In the silicon microphone chip 13, a bias voltage can be applied between the back plate 23 and the diaphragm 25, and the capacitance change between the back plate 23 and the diaphragm 25 based on the vibration of the diaphragm 25. Thus, pressure fluctuations such as sound are detected.

The support substrate 15 is made of a material having a thermal expansion coefficient larger than that of silicon constituting the support portion 21. That is, since the expansion coefficient of silicon is about 3 ppm / K, the support substrate 15 may be made of a metal material such as a copper alloy or 42 alloy (iron-nickel alloy). The support substrate 15 is not limited to a metal material, and may be formed of a resin material, for example, as long as it has a coefficient of thermal expansion greater than that of silicon.
The support portion 21 of the above-described silicon microphone chip 13 is attached to the surface 15a of the support substrate 15 via a thermosetting adhesive 27 so that the diaphragm 25 faces the surface 15a. The thermosetting adhesive 27 is arranged so as to fill the space between the periphery of the inner hole 21a of the silicon microphone chip 13 and the support substrate 15. In the cured state, the inner hole 21a, the diaphragm 25, and the support are provided. The cavity S1 defined by the surface 15a of the substrate 15 is almost sealed against the outer space. Note that when the cavity S1 is actually sealed, a pressure difference occurs on both sides of the diaphragm 25 based on changes in temperature and atmospheric pressure. For example, only a part between the support substrate 15 and the support 21 is obtained. In some cases, the thermosetting adhesive 27 is not applied to the pores, and pores that allow the cavity S1 to communicate with the outer space may be formed by using the portions that are not applied.

Examples of the thermosetting adhesive 27 include model number “EN-4072” manufactured by Hitachi Chemical Co., Ltd., which is an epoxy adhesive. The thermosetting adhesive 27 is cured by maintaining a high temperature of 150 ° C. for 60 minutes, and the tensile elastic modulus in the cured state is 3600 MPa or more. This tensile elastic modulus transmits contraction force generated in the support substrate 15 to the support portion 21 of the silicon microphone chip 13 when the silicon microphone chip 13 and the support substrate 15 are cooled in the manufacturing method of the silicon microphone unit 1 described later. It is large enough to be able to. In addition, a filler is mixed in the thermosetting adhesive 27.
As shown in FIG. 1, the base substrate 3 is formed of, for example, a so-called multilayer wiring board in which an electrical wiring portion (not shown) is provided, and is configured to be electrically connected to the silicon microphone chip 13. ing. The electrical connection between the silicon microphone chip 13 and the base substrate 3 is performed by, for example, wire bonding.

The support substrate 15 of the silicon microphone unit 1 described above is attached to the surface 3 a of the base substrate 3 via a mounting adhesive 29 having thermosetting properties.
Examples of the mounting adhesive 29 include model number “EN-4900F-1” manufactured by Hitachi Chemical Co., Ltd., which is an acrylic adhesive. As with the thermosetting adhesive 27, the mounting adhesive 29 is cured by maintaining a high temperature of 150 ° C. for 60 minutes. Further, the tensile elastic modulus of the mounting adhesive 29 in the cured state is 300 to 500 MPa. This tensile elastic modulus is large enough to absorb the stress generated between the support substrate 15 and the base substrate 3 based on the difference in thermal expansion coefficient between the mounting method of the silicon microphone unit 1 described later. .

The lid 5 includes a substantially plate-like upper end wall portion 5a disposed at a position spaced from the surface 3a of the base substrate 3 in the thickness direction, and a substantially annular side wall portion fixed to the periphery of the surface 3a of the base substrate 3. 5b. That is, the lid 5 is formed in a substantially concave shape that opens to the tip end side of the side wall 5b by the upper end wall 5a and the side wall 5b.
Therefore, in a state where the front end portion of the side wall portion 5b is disposed on the surface 3a of the base substrate 3, the base substrate 3 and the lid 5 define the hollow space S2 including the silicon microphone chip 13. The hollow space S2 communicates with the outer space of the microphone package 11 through an opening 5c formed in the upper end wall 5a.

When the microphone package 11 configured as described above is manufactured, the silicon microphone unit 1 is manufactured in advance, the silicon microphone unit 1 is mounted on the base substrate 3, and finally the lid 5 is attached.
First, a method for manufacturing the silicon microphone unit 1 will be described below. In this manufacturing method, the silicon microphone chip 13 is first manufactured. At this time, as shown in FIG. 2, a polycrystalline silicon film doped with an impurity such as phosphorus (P) is formed on the support portion 21 as a diaphragm 25 by CVD or the like. When the silicon microphone chip 13 is cooled after forming the diaphragm 25 in this way, tensile stress is generated in the diaphragm 25. This tensile stress acts in the surface direction (A direction) of the diaphragm 25.
After the diaphragm 25 is formed, the back plate 23 is formed by CVD or the like and etched by RIE (Reactive Ion Etching) or the like to form a plurality of through holes 23a in the back plate 23. Thus, the manufacture of the silicon microphone chip 13 is completed.

Next, the support portion 21 of the silicon microphone chip 13 is attached to the surface 15 a of the support substrate 15 by the thermosetting adhesive 27 with the diaphragm 25 facing the surface 15 a of the support substrate 15.
At the time of this bonding, first, a thermosetting adhesive 27 is applied so that the space between the inner hole 21a of the silicon microphone chip 13 and the support substrate 15 is filled. Next, the thermosetting adhesive 27 is cured to fix the support portion 21 of the silicon microphone chip 13 and the support substrate 15 to each other. At the time of this curing, it is possible to heat from room temperature (25 ° C.) to a high temperature of 150 ° C. and maintain this heating state for 60 minutes. In this heating, since the silicon microphone chip 13 and the support substrate 15 are also heated and extend in the direction of the surface 15a of the support substrate 15, the support portion 21 of the silicon microphone chip 13 and the support substrate 15 are fixed as described above. It will be performed in an expanded state.

After the silicon microphone chip 13 and the support substrate 15 are fixed to each other, the silicon microphone chip 13 and the support substrate 15 are cooled to room temperature. In this cooling, the support substrate 15 contracts more than the support portion 21 of the silicon microphone chip 13, but the support portion 21 is fixed to the support substrate 15 by the cured thermosetting adhesive 27. The shrinkage force of the support substrate 15 based on the difference in shrinkage amount is transmitted to the support portion 21 through the thermosetting adhesive 27. Here, since the contraction direction (B direction) of the support substrate 15 is the surface 15a direction of the support substrate 15 and is along the surface direction of the diaphragm 25, the contraction force acts in a direction to contract the diaphragm 25. And the tensile stress of the diaphragm 25 can be relieved.
Thus, the manufacture of the silicon microphone unit 1 is completed.

Next, a mounting method of the silicon microphone unit 1 for mounting the silicon microphone unit 1 on the base substrate 3 will be described below.
In this mounting method, as shown in FIG. 1, the support substrate 15 is bonded to the base substrate 3 with a thermosetting mounting adhesive 29 with the back surface 15 b of the support substrate 15 facing the base substrate 3. At the time of this bonding, a mounting adhesive 29 is applied between the front surface 3 a of the base substrate 3 and the back surface 15 b of the support substrate 15. Next, the mounting adhesive 29 is cured to fix the support substrate 15 and the base substrate 3 to each other. At the time of this curing, it is possible to heat from room temperature (25 ° C.) to a high temperature of 150 ° C. and maintain this heating state for 60 minutes. In this heating, since the support substrate 15 and the base substrate 3 are heated and extend in the direction of the surface 3a of the base substrate 3, the support substrate 15 and the base substrate 3 are fixed in the extended state as described above. .

After the support substrate 15 and the base substrate 3 are fixed to each other, the silicon microphone unit 1 and the base substrate 3 are cooled, and the mounting of the silicon microphone unit 1 is completed. In this cooling, stress is generated between the support substrate 15 and the base substrate 3 based on the difference in thermal expansion coefficient between the support substrate 15 and the base substrate 3. Here, since the stress is absorbed by the mounting adhesive 29, the support substrate 15 and the base substrate 3 are not deformed based on the stress. Therefore, it is possible to easily prevent the silicon microphone chip 13 from being deformed.
After the above-described mounting of the silicon microphone unit 1 is completed, the cover 5 covering the silicon microphone unit 1 is fixed to the surface 3a of the base substrate 3, whereby the manufacture of the microphone package 11 is completed.
In the microphone package 11 manufactured as described above, when a pressure fluctuation such as sound reaches the diaphragm 25 of the silicon microphone chip 13 through the opening 5c of the lid 5, the pressure fluctuation is based on the pressure fluctuation. When the diaphragm 25 vibrates, the pressure fluctuation can be detected.

According to the silicon microphone unit 1 and the manufacturing method thereof, when the support portion 21 of the silicon microphone chip 13 is attached to the surface 15 a of the support substrate 15, the tensile stress of the diaphragm 25 can be easily applied based on the contraction of the support substrate 15. Since it can be relaxed, the sensitivity of the silicon microphone chip 13 can be improved. In particular, the thermosetting adhesive 27 has a tensile elastic modulus that can transmit the contraction force generated in the support substrate 15 to the support portion 21 when the silicon microphone chip 13 and the support substrate 15 are cooled. The tensile stress can be relaxed with certainty.
Further, since the tensile stress can be relieved as described above, it is not necessary to separate the diaphragm 25 from the support portion 21 as in the prior art, and the strength of the diaphragm 25 can be prevented from being lowered.

  Further, according to the mounting method of the silicon microphone unit 1, since the silicon microphone unit 1 is mounted on the base substrate 3 after the silicon microphone unit 1 is configured, the silicon microphone unit 1 and the base substrate 3 are heated and cooled in this mounting. Even if there is a thermal cycle, the silicon microphone chip 13 can be prevented from being deformed. Therefore, it is possible to prevent stress from being generated in the diaphragm 25 when the silicon microphone chip 13 is mounted. That is, the expansion and contraction of the base substrate 3 based on the thermal cycle can be prevented from affecting the diaphragm 25.

  Next, a second embodiment according to the present invention will be described with reference to FIG. The silicon microphone unit of the second embodiment is different from the first embodiment only in the configuration of the support substrate. Here, only the differences will be mainly described, and the same components as those of the silicon microphone unit 1 and the microphone package 11 of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIG. 3, the support substrate 33 constituting the silicon microphone unit (semiconductor microphone unit) 31 is formed with a through hole 33c penetrating from the front surface 33a to the back surface 33b. The through hole 33 c serves to expose the diaphragm 25 to the outside of the silicon microphone unit 31 through the inner hole 21 a of the silicon microphone chip 13.
When the silicon microphone unit 31 having this configuration is mounted on the front surface 3a of the base substrate 3, the back surface 33b of the support substrate 33 is opposed to the front surface 3a of the base substrate 3, as in the first embodiment. The support substrate 33 may be attached to the base substrate 3 with the mounting adhesive 29. In this state, the diaphragm 25 and the base substrate 3 face each other through the inner hole 21a and the through hole 33c.

Here, the mounting adhesive 29 is arranged so as to fill between the periphery of the through hole 33c of the support substrate 33 and the base substrate 3, and in a state where this is cured, the inner hole 21a, the through hole 33c, The cavity S3 defined by the diaphragm 25 and the base substrate 3 is substantially sealed with respect to the outer space. That is, the cavity S3 is substantially isolated from the outer space. Note that when the cavity S3 is actually sealed, a pressure difference occurs on both sides of the diaphragm 25 based on changes in temperature and atmospheric pressure. For example, only a part between the base substrate 3 and the support substrate 33 is generated. In some cases, the mounting adhesive 29 is not applied to the surface, but the pores that allow the cavity S3 to communicate with the outer space may be formed using the unapplied portion.
According to the silicon microphone unit 31, by forming the through hole 33c in the support substrate 33, it is possible to form a larger cavity S3 as compared with the cavity S1 of the first embodiment. The volume of the cavity S3 can be increased.

  In addition, when the volume of this kind of cavity part is small, since the pressure in a cavity part rises easily with respect to the vibration of the diaphragm 25, the diaphragm 25 becomes difficult to bend, but the volume of cavity part S3 as mentioned above. Since the pressure increase in the cavity S3 can be suppressed by enlarging, it is possible to easily prevent the diaphragm 25 from becoming difficult to bend. Therefore, it is possible to prevent a decrease in sensitivity of the silicon microphone chip 13.

The thermosetting adhesive 27 is not limited to that of the above embodiment, and at least when the thermosetting adhesive 27 in the cured state cools the silicon microphone chip 13 and the supporting substrates 15 and 33, the supporting substrate 15. , 33 as long as it has a tensile elastic modulus that can transmit the contraction force generated to the silicon microphone chip 13. The specific magnitude | size of this tensile elasticity modulus should just be 3600 Mpa or more similarly to the said embodiment.
Further, the mounting adhesive 29 is not limited to that of the above embodiment, and at least the mounting adhesive 29 in the cured state is based on the difference in thermal expansion coefficient between the support substrates 15 and 33 and the base substrate 3. What is necessary is just to have a tensile elasticity modulus which can absorb the stress which generate | occur | produces between.
The specific magnitude | size of this tensile elasticity modulus should just be in the range of 300-500 MPa similarly to the said embodiment.

Further, for example, when the thermal expansion coefficients of the support substrates 15 and 33 and the base substrate 3 are equal, the stress is not generated at the time of cooling. Therefore, the mounting adhesive 29 can absorb the stress. May not be included.
Although the mounting adhesive 29 has thermosetting properties, the present invention is not limited to this, and it is sufficient that at least the support substrate 15 and the base substrate 3 can be fixed to each other. For example, the mounting adhesive 29 has thermosetting properties. You don't have to.

Furthermore, although the inner hole 21a, the back plate 23, and the diaphragm 25 provided in the silicon microphone chip 13 are formed in a substantially circular shape in plan view, they may be formed in a polygonal shape in plan view. Further, the outer shape of the annular support portion 21 may be formed in an annular shape or a polygonal annular shape in plan view.
Furthermore, although the silicon microphone unit 1 is mounted on the surface 3a of the base substrate 3 constituting the microphone package 11, the present invention is not limited to this. For example, the silicon microphone unit 1 may be directly mounted on a circuit board (substrate). Absent. Even in this case, the support substrates 15 and 33 may be attached to the surface of the circuit board with the same mounting adhesive 29 as in the above embodiment.

  As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.

It is a sectional side view showing a microphone package provided with a silicon microphone unit concerning a 1st embodiment of this invention. It is a sectional side view which shows the silicon microphone unit which concerns on 1st Embodiment of this invention. It is a sectional side view showing a microphone package provided with a silicon microphone unit concerning a 2nd embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,31 ... Silicon microphone unit (semiconductor microphone unit), 3 ... Base substrate (substrate), 3a ... Surface, 13 ... Silicon microphone chip (semiconductor microphone chip), 15, 33 ... Support substrate, 15a, 33a ... front surface, 15b, 33b ... back surface, 21 ... support part, 21a ... inner hole, 25 ... diaphragm, 27 ... thermosetting adhesive, 29 ... Mounting adhesive, 33c ... Through hole

Claims (5)

  1. A semiconductor microphone unit including a semiconductor microphone chip provided with a diaphragm so as to cover the inner hole of the support part,
    The support portion is attached to the surface of the support substrate with a thermosetting adhesive in a state where the diaphragm is opposed to the surface of the support substrate having a larger thermal expansion coefficient than the support portion. A semiconductor microphone unit.
  2.   The thermosetting adhesive in a cured state has a tensile elasticity enough to transmit a contraction force generated in the support substrate to the support portion when the semiconductor microphone chip and the support substrate are cooled. The semiconductor microphone unit according to claim 1.
  3.   3. The semiconductor microphone unit according to claim 1, wherein a through-hole that exposes the diaphragm to the outside through the inner hole is formed in the support substrate.
  4. A semiconductor microphone unit mounting method for mounting the semiconductor microphone unit according to any one of claims 1 to 3 on a surface of a substrate,
    The back surface of the support substrate is opposed to the substrate, and the support substrate is attached to the substrate with a thermosetting mounting adhesive.
    The mounting adhesive in a cured state has a tensile elastic modulus that can absorb a stress generated between the supporting substrate and the substrate based on a difference in thermal expansion coefficient between the supporting substrate and the substrate. How to install the unit.
  5. Manufacturing a semiconductor microphone chip provided with a diaphragm so as to cover the inner hole of the support part,
    Manufacturing a semiconductor microphone unit, wherein the diaphragm is opposed to a surface of a support substrate having a larger thermal expansion coefficient than the support portion, and the support portion is attached to the surface of the support substrate with a thermosetting adhesive. Method.
JP2007229269A 2006-09-04 2007-09-04 Semiconductor microphone unit, manufacturing method thereof, and method of mounting semiconductor microphone unit Pending JP2008092561A (en)

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Application Number Priority Date Filing Date Title
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JP2007229269A JP2008092561A (en) 2006-09-04 2007-09-04 Semiconductor microphone unit, manufacturing method thereof, and method of mounting semiconductor microphone unit

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Application Number Priority Date Filing Date Title
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010090070A1 (en) * 2009-02-05 2010-08-12 船井電機株式会社 Microphone unit
WO2010092856A1 (en) * 2009-02-13 2010-08-19 船井電機株式会社 Microphone unit
JP2011015107A (en) * 2009-07-01 2011-01-20 Funai Electric Co Ltd Microphone unit
WO2012070166A1 (en) * 2010-11-24 2012-05-31 パナソニック株式会社 Converter module and method for producing same
JP2012222828A (en) * 2011-04-12 2012-11-12 Pixart Imaging Inc Micro electromechanical system microphone and manufacturing method of the same
TWI505723B (en) * 2009-12-29 2015-10-21 Bse Co Ltd Mems microphone and manufacturing method of the same
WO2016018624A1 (en) * 2014-07-29 2016-02-04 Knowles Electronics, Llc Composite back plate and method of manufacturing the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010090070A1 (en) * 2009-02-05 2010-08-12 船井電機株式会社 Microphone unit
JP2010183312A (en) * 2009-02-05 2010-08-19 Funai Electric Co Ltd Microphone unit
WO2010092856A1 (en) * 2009-02-13 2010-08-19 船井電機株式会社 Microphone unit
JP2010187324A (en) * 2009-02-13 2010-08-26 Funai Electric Co Ltd Microphone unit
US8818010B2 (en) 2009-02-13 2014-08-26 Funai Electric Co., Ltd. Microphone unit
JP2011015107A (en) * 2009-07-01 2011-01-20 Funai Electric Co Ltd Microphone unit
TWI505723B (en) * 2009-12-29 2015-10-21 Bse Co Ltd Mems microphone and manufacturing method of the same
WO2012070166A1 (en) * 2010-11-24 2012-05-31 パナソニック株式会社 Converter module and method for producing same
JP2012222828A (en) * 2011-04-12 2012-11-12 Pixart Imaging Inc Micro electromechanical system microphone and manufacturing method of the same
WO2016018624A1 (en) * 2014-07-29 2016-02-04 Knowles Electronics, Llc Composite back plate and method of manufacturing the same

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