KR101109095B1 - Mems microphone and manufacturing method of the same - Google Patents
Mems microphone and manufacturing method of the same Download PDFInfo
- Publication number
- KR101109095B1 KR101109095B1 KR1020090132682A KR20090132682A KR101109095B1 KR 101109095 B1 KR101109095 B1 KR 101109095B1 KR 1020090132682 A KR1020090132682 A KR 1020090132682A KR 20090132682 A KR20090132682 A KR 20090132682A KR 101109095 B1 KR101109095 B1 KR 101109095B1
- Authority
- KR
- South Korea
- Prior art keywords
- membrane
- silicon substrate
- back plate
- air gap
- depositing
- Prior art date
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
- Multimedia (AREA)
- Micromachines (AREA)
Abstract
The present invention relates to a MEMS microphone capable of reducing residual stress at a contact portion of a silicon substrate with a membrane, and a method of manufacturing the same. According to the present invention, a silicon substrate is formed a back chamber; A back plate deposited on the silicon substrate and having a plurality of sound holes; A membrane deposited on the silicon substrate to be spaced apart from the back plate to form an air gap; And a stress buffer portion deposited on a contact portion of the membrane and the silicon substrate.
MEMS microphone, stress buffer
Description
The present invention relates to a MEMS microphone and a method of manufacturing the same.
In general, microphones are devices that convert voice into electrical signals. The microphone may be applied to various communication devices such as mobile communication devices such as mobile terminals, earphones or hearing aids. Such microphones should have good electronic / acoustic performance, reliability and operability.
The micron includes a condenser microphone, a MEMS microphone, and the like.
The condenser microphone is manufactured by fabricating the diaphragm, the back plate, and the signal processing printed circuit board, respectively, and then assembling the components into the case. The condenser microphone is separated from the process of manufacturing a printed circuit board and the process of manufacturing a condenser microphone, thereby increasing production cost and limiting miniaturization.
The MEMS microphone manufactures all the deflection sensing element parts such as the diaphragm and the back plate on a single silicon substrate using a semiconductor process.
A MEMS microphone disclosed in Korean Application No. 10-2002-0074492 (filed November 27, 2002) is disclosed. The MEMS microphone is heat-treated at a high temperature of approximately 1100 ° C. to inject electrons into the lower electrode. In this case, since the membrane (vibration plate) is substantially composed of heterogeneous materials such as a metallic lower electrode, a silicon nitride film, and a silicon oxide film, residual stress (compression stress or expansion stress) is generated due to a difference in thermal expansion coefficient during high temperature heat treatment. Deformation or cracking may occur as the membrane is subjected to residual stress. Furthermore, when the residual stress is applied to the membrane, the membrane may be difficult to accurately vibrate according to the sound, so it may be difficult to accurately convert the generated sound into an electrical signal.
In addition, since the microphone adjusts the thickness of the membrane by etching the lower side of the silicon substrate, the thickness of the membrane may be uneven. When the thickness of the membrane becomes nonuniform, the membrane may vibrate irregularly with respect to the sound, and thus it may be difficult to accurately convert the sound into an electrical signal.
International Publication No. WO 2007/112743 (published March 29, 2007) discloses a method for manufacturing a MEMS microphone in which a silicon substrate is oxidized to form a
In addition, the diaphragm has a significant difference in thermal expansion coefficient between a silicon substrate and a silicon oxide film. However, since the diaphragm is in contact with the silicon substrate by the silicon oxide film, cracks may be generated due to the difference in the coefficient of thermal expansion at the portion where the diaphragm is in contact with the silicon substrate.
In addition, since the two cited references have a structure in which a membrane and a back plate are stacked on a silicon substrate, the height of the MEMS microphone is inevitably increased. Thus, there has been a limitation in the production of miniaturized microphones.
An object of the present invention for solving the above-mentioned problems is to provide a MEMS microphone and a method of manufacturing the same that can minimize the residual stress at the site where the membrane is in contact with the silicon substrate.
Another object of the present invention is to provide a MEMS microphone and a method of manufacturing the same, which do not need to be heated to a high temperature to adsorb ions to the membrane and the back plate.
Another object of the present invention is to facilitate the planarization of the sacrificial layer than the structure in which the membrane and the back plate are stacked on the upper side of the silicon substrate, and by controlling the thickness of the membrane and the back plate freely to adjust the acoustic characteristics of the microphone It is to provide a MEMS microphone and a method of manufacturing the same that can be improved.
It is still another object of the present invention to provide a MEMS microphone capable of reducing the height of the MEMS microphone beyond a gap between the membrane and the back plate, and a method of manufacturing the same.
According to an aspect of the present invention for achieving the above object, a silicon substrate is formed; A back plate deposited on the silicon substrate and having a plurality of sound holes; A membrane deposited on the silicon substrate to be spaced apart from the back plate to form an air gap; And a stress buffer deposited on a contact portion between the membrane and the silicon substrate.
According to another aspect of the invention, the step of depositing a stress buffer on the silicon substrate; Depositing a membrane on the stress buffer; Depositing a sacrificial layer on the membrane; Depositing a back plate such that a plurality of sound holes are formed in the sacrificial layer; Etching the lower side of the silicon substrate to form a back chamber; And removing the sacrificial layer to form an air gap between the membrane and the back plate.
According to another aspect of the invention, the step of depositing a back plate on a silicon substrate; Depositing a sacrificial layer on the back plate; Depositing a stress buffer around the back plate of the silicon substrate; Depositing a membrane on the stress buffer and the sacrificial layer; Etching the lower side of the silicon substrate to form a back chamber; And removing the sacrificial layer to form an air gap between the membrane and the back plate.
According to the present invention, there is an effect of minimizing the residual stress at the site where the membrane and the silicon substrate contact. Furthermore, there is an effect that can prevent the crack is generated in the contact portion of the membrane and the silicon substrate.
According to the present invention, the membrane is prevented from being deformed by residual stress, so that the negative pressure measurement can be normally performed.
According to the present invention, since the membrane and the back plate are deposited by electroless plating at a low temperature (a temperature of about 90 ° C.), there is an effect that one-chip of MEMS chip and ASIC chip can be formed. Furthermore, there is an effect that can be produced by the unified semiconductor process MEMS microphone.
According to the present invention, since the MEMS microphone is manufactured at a low temperature, there is an effect of minimizing the residual stress remaining in the membrane and the back plate itself. Furthermore, the membrane and the back plate may have an effect of preventing cracks from occurring in contact with the silicon substrate.
According to the present invention, since the membrane and the back plate are deposited using the electroless plating method, the membrane and the back plate can be easily adjusted to stabilize the acoustic properties and increase the acoustic sensitivity.
According to the present invention, since the silicon substrate is etched and the membrane and the back plate are deposited to form an air gap, the air gap can be accurately and simply formed. Furthermore, there is an effect of reducing the height of the MEMS microphone and allowing the membrane and the back plate to be more stably fixed to the substrate.
Specific embodiments of the MEMS microphone of the present invention for achieving the above object will be described.
A first embodiment of a MEMS microphone according to the present invention will be described.
1A to 1C are cross-sectional views illustrating a process of forming an air gap forming portion on a silicon substrate in a first embodiment of a MEMS microphone according to the present invention.
1A and 1B, the MEMS microphone includes a
The insulating
Referring to FIG. 1C, the air
By adjusting the depth of the air
In addition, the circumference of the air
2A to 2C are cross-sectional views illustrating a process of depositing a stress buffer in an air gap forming portion of the silicon substrate of FIG. 1C.
2A to 2C, a
The
The
The
In this case, the thermal expansion coefficients of the plurality of
(Gpa)
(ppm / ℃)
(ppm / ℃)
(MPa / ℃)
(g / cm3)
ratio
(W / mK)
(um)
[table]
The
The
3A and 3B are cross-sectional views illustrating a process of depositing a membrane over the membrane of the silicon substrate of FIG. 2C.
3A and 3B, a
The
The electroless plating method of the
In addition, since the conductive ions or the like are reduced-substituted at a low temperature of about 90 ° C. by electroless plating, the
In addition, since the
In addition, the
In contrast, when the
Meanwhile, the flexible conductive material including nickel may be applied to the
In addition, the thickness of the
On the other hand, when the
4A and 4B are cross-sectional views illustrating a process of depositing a sacrificial layer and a back plate on the membrane of FIG. 3B.
Referring to FIG. 4A, a
The top surface of the
The
Referring to FIG. 4B, the
The electroless plating method of the
Since the
In addition, since the
In contrast, when the
On the other hand, the
5A through 5C are cross-sectional views illustrating a process of forming a back chamber and an air gap in the silicon substrate of FIG. 4B.
5A and 5B, a photosensitive mask material (not shown) is coated on the lower insulating
The region where the
In addition, the region in which the
As the lower side of the
Referring to FIG. 5C, the
The gap of the
In addition, the
The operation of the MEMS microphone configured as described above will be described.
6 is a schematic view for explaining the action of the membrane and the stress buffer.
Referring to FIG. 6, in the MEMS microphone, when the
In this case, when there is a compressive stress remaining in the
In addition, when there is a tensile stress remaining in the
Accordingly, the
Meanwhile, the MEMS microphone may control the
In addition, since the
In addition, since the
In addition, since the
Next, a second embodiment of the MEMS microphone according to the present invention will be described.
7 is a cross-sectional view showing a process of forming an air gap forming portion on a silicon substrate in a second embodiment of a MEMS microphone according to the present invention.
Referring to FIG. 7, the MEMS microphone includes a
The insulating
An upper side of the
By adjusting the depth D of the air
In addition, the circumference of the air
8A to 8C are cross-sectional views illustrating a process of depositing a back plate on an air gap forming portion of the silicon substrate of FIG. 7.
8A to 8C, a
The electroless plating method of the
Since the
In addition, since the
On the contrary, when the back plate is formed by the electroplating method as in the related art, after the seed layer is deposited on the surface of the back plate, electricity must be supplied. In the seed layer, electricity is distributed at partially uneven intensity. At this time, since the back plate is plated with a non-uniform thickness of the conductive ions, the thickness of the back plate may be uneven overall. However, the electroless plating method of the present invention has no current density difference in the back plate, so that the thickness of the back plate becomes uniform throughout.
Meanwhile, a flexible conductive material including nickel may be applied to the
In addition, the thickness of the
On the other hand, when the
9A and 9B are cross-sectional views illustrating a process of depositing a sacrificial layer and a stress buffer on the back plate of a silicon substrate.
Referring to FIG. 9A, a
The top surface of the
The
Referring to FIG. 9B, a
The
The
The
In this case, the thermal expansion coefficients of the plurality of
The
10 is a cross-sectional view illustrating a process of depositing a membrane on a stress buffer and a sacrificial layer.
Referring to FIG. 10, the
The electroless plating method of the
Since the
Since the
Since the
In addition, the
11A and 11B are cross-sectional views illustrating a process of forming a back chamber and an air gap in a silicon substrate.
Referring to FIG. 11A, a photosensitive mask material is coated on the lower insulating
The region where the
In addition, an area in which the
As the lower side of the
Referring to FIG. 11B, the
The gap of the air gap 85 may be predesigned by the etching depth of the
In addition, the
The MEMS microphone may adjust the air gap 85 between the
In addition, since the
In addition, since the
In addition, since the
Since the present invention can prevent the occurrence of cracks by reducing the residual stress at the contact portion of the membrane and the silicon substrate, there is a significant industrial applicability.
1A to 1C are cross-sectional views illustrating a process of forming an air gap forming portion on a silicon substrate in a first embodiment of a MEMS microphone according to the present invention.
2A to 2C are cross-sectional views illustrating a process of depositing a stress buffer in an air gap forming portion of the silicon substrate of FIG. 1C.
3A and 3B are cross-sectional views illustrating a process of depositing a membrane in an air gap forming portion of the silicon substrate of FIG. 2C.
4A and 4B are cross-sectional views illustrating a process of depositing a sacrificial layer and a back plate on the membrane of FIG. 3B.
5A through 5C are cross-sectional views illustrating a process of forming a back chamber and an air gap in the silicon substrate of FIG. 4B.
6 is a schematic view for explaining the operation of the membrane and the stress buffer of FIG.
7 is a cross-sectional view showing a process of forming an air gap forming portion on a silicon substrate in a second embodiment of a MEMS microphone according to the present invention.
8A to 8C are cross-sectional views illustrating a process of depositing a back plate on an air gap forming portion of the silicon substrate of FIG. 7.
9A and 9B are cross-sectional views illustrating a process of depositing a sacrificial layer and a stress buffer on the back plate of FIG. 8C.
FIG. 10 is a cross-sectional view illustrating a process of depositing a membrane on the stress buffer and the sacrificial layer of FIG. 9B.
11A and 11B are cross-sectional views illustrating a process of forming a back chamber and an air gap in a silicon substrate.
Explanation of symbols on the main parts of the drawings
10,50:
16,56:
33,73:
41,81: back
20, 70:
Claims (21)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090132682A KR101109095B1 (en) | 2009-12-29 | 2009-12-29 | Mems microphone and manufacturing method of the same |
PCT/KR2010/007535 WO2011081288A2 (en) | 2009-12-29 | 2010-10-29 | Mems microphone and method for manufacturing same |
CN201010579578.9A CN102111705B (en) | 2009-12-29 | 2010-12-03 | Mems microphone and manufacture method thereof |
TW099142137A TWI505723B (en) | 2009-12-29 | 2010-12-03 | Mems microphone and manufacturing method of the same |
CN2010206481591U CN201937821U (en) | 2009-12-29 | 2010-12-03 | Microphone of microelectronic mechanical system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090132682A KR101109095B1 (en) | 2009-12-29 | 2009-12-29 | Mems microphone and manufacturing method of the same |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110076074A KR20110076074A (en) | 2011-07-06 |
KR101109095B1 true KR101109095B1 (en) | 2012-01-31 |
Family
ID=44175704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090132682A KR101109095B1 (en) | 2009-12-29 | 2009-12-29 | Mems microphone and manufacturing method of the same |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR101109095B1 (en) |
CN (2) | CN102111705B (en) |
TW (1) | TWI505723B (en) |
WO (1) | WO2011081288A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024034931A1 (en) * | 2022-08-08 | 2024-02-15 | 삼성전자주식회사 | Electronic apparatus comprising audio input device |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101355434B1 (en) * | 2012-06-12 | 2014-01-28 | 한국생산기술연구원 | Manufacturing method for plastic chamber plate with ordered porous polymer membrane |
KR20140040997A (en) | 2012-09-27 | 2014-04-04 | 한국전자통신연구원 | Mems microphone and fabrication method thereof |
CN106604195A (en) * | 2015-10-14 | 2017-04-26 | 天津修瑕科技有限公司 | Security method based on electronic information system keys |
CN107465983B (en) * | 2016-06-03 | 2021-06-04 | 无锡华润上华科技有限公司 | MEMS microphone and preparation method thereof |
CN108609573A (en) * | 2016-12-12 | 2018-10-02 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method thereof, electronic device |
KR102091849B1 (en) * | 2018-11-30 | 2020-03-20 | (주)다빛센스 | Condensor microphone and manufacturing method thereof |
CN111131986A (en) * | 2019-12-31 | 2020-05-08 | 歌尔股份有限公司 | Dustproof structure, microphone packaging structure and electronic equipment |
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JP2006068843A (en) | 2004-08-31 | 2006-03-16 | Sony Corp | Micro electromechanical element, optical micro electromechanical element, light modulation element and laser display |
KR20060099627A (en) * | 2005-03-14 | 2006-09-20 | 주식회사 케이이씨 | Micro-phone using micro electro mechanical systems process and manufacturing method the same |
KR100893558B1 (en) | 2005-08-10 | 2009-04-17 | 세이코 엡슨 가부시키가이샤 | Semiconductor device, manufacturing method for semiconductor device and electronic component |
JP2009148880A (en) | 2007-12-14 | 2009-07-09 | Ind Technol Res Inst | Sensing membrane and micro-electro-mechanical system device using the same |
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US6566251B2 (en) * | 2001-03-29 | 2003-05-20 | Georgia Tech Research Corporation | Method for selective deposition of materials in micromachined molds |
EP1246502A1 (en) * | 2001-03-30 | 2002-10-02 | Phone-Or Ltd | Microphone |
US7045868B2 (en) * | 2003-07-31 | 2006-05-16 | Motorola, Inc. | Wafer-level sealed microdevice having trench isolation and methods for making the same |
US20060291674A1 (en) * | 2005-06-14 | 2006-12-28 | Merry Electronics Co. Ltd. | Method of making silicon-based miniaturized microphones |
TWI285509B (en) * | 2006-02-10 | 2007-08-11 | Univ Nat Chunghsing | Sawing-free process for manufacturing wafer of capacitor-type silicon microphone |
WO2007112743A1 (en) * | 2006-03-30 | 2007-10-11 | Sonion Mems A/S | Single die mems acoustic transducer and manufacturing method |
JP2008092561A (en) * | 2006-09-04 | 2008-04-17 | Yamaha Corp | Semiconductor microphone unit, manufacturing method thereof, and method of mounting semiconductor microphone unit |
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WO2009146494A1 (en) * | 2008-06-04 | 2009-12-10 | Cochlear Limited | Implantable microphone diaphragm stress decoupling system |
-
2009
- 2009-12-29 KR KR1020090132682A patent/KR101109095B1/en not_active IP Right Cessation
-
2010
- 2010-10-29 WO PCT/KR2010/007535 patent/WO2011081288A2/en active Application Filing
- 2010-12-03 CN CN201010579578.9A patent/CN102111705B/en not_active Expired - Fee Related
- 2010-12-03 CN CN2010206481591U patent/CN201937821U/en not_active Expired - Lifetime
- 2010-12-03 TW TW099142137A patent/TWI505723B/en not_active IP Right Cessation
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JP2006068843A (en) | 2004-08-31 | 2006-03-16 | Sony Corp | Micro electromechanical element, optical micro electromechanical element, light modulation element and laser display |
KR20060099627A (en) * | 2005-03-14 | 2006-09-20 | 주식회사 케이이씨 | Micro-phone using micro electro mechanical systems process and manufacturing method the same |
KR100893558B1 (en) | 2005-08-10 | 2009-04-17 | 세이코 엡슨 가부시키가이샤 | Semiconductor device, manufacturing method for semiconductor device and electronic component |
JP2009148880A (en) | 2007-12-14 | 2009-07-09 | Ind Technol Res Inst | Sensing membrane and micro-electro-mechanical system device using the same |
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WO2024034931A1 (en) * | 2022-08-08 | 2024-02-15 | 삼성전자주식회사 | Electronic apparatus comprising audio input device |
Also Published As
Publication number | Publication date |
---|---|
WO2011081288A3 (en) | 2011-11-03 |
CN201937821U (en) | 2011-08-17 |
WO2011081288A2 (en) | 2011-07-07 |
CN102111705B (en) | 2015-12-09 |
CN102111705A (en) | 2011-06-29 |
KR20110076074A (en) | 2011-07-06 |
TWI505723B (en) | 2015-10-21 |
TW201127088A (en) | 2011-08-01 |
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