CN201937821U - Microphone of microelectronic mechanical system - Google Patents
Microphone of microelectronic mechanical system Download PDFInfo
- Publication number
- CN201937821U CN201937821U CN2010206481591U CN201020648159U CN201937821U CN 201937821 U CN201937821 U CN 201937821U CN 2010206481591 U CN2010206481591 U CN 2010206481591U CN 201020648159 U CN201020648159 U CN 201020648159U CN 201937821 U CN201937821 U CN 201937821U
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- film
- silicon substrate
- supporting bracket
- evaporation
- microelectromechanical systems
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
- Multimedia (AREA)
- Micromachines (AREA)
Abstract
The utility model relates to a microphone of MEMS (microelectronic mechanical system), which is capable of reducing residual stress on the contacting part of a silicon substrate with a film, and comprises a silicon substrate, a supporting plate, a film and a stress buffering part. A back cavity is formed on the silicon substrate, a plurality of sound holes are formed on the supporting plate which is evaporated on the silicon substrate, the film is evaporated on the silicon substrate by separating from the supporting plate to form a clearance, and the stress buffering part is evaporated on the contacting part of the silicon substrate with the film.
Description
Technical field
The utility model relates to a kind of microelectromechanical systems microphone.
Background technology
Generally, microphone is a kind of device that converts tones into the signal of telecommunication.Described microphone is used for various communication equipments, as mobile communication equipment, earphone or the hearing aids etc. of mobile phone etc.This microphone should have good electron/sound equipment performance, reliability and workability.
Described microphone has condenser microphone (condenser microphone) and microelectromechanical systems microphone (MEMS microphone) etc.
Described condenser microphone is by making earlier oscillating plate, supporting bracket and signal processing respectively with after the printed circuit board (PCB) etc., described structure is assemblied in the inside of shell and makes and finishes.This condenser microphone is owing to the operation of making printed circuit board (PCB) is separated with the operation of making condenser microphone, so the production cost increase, and also is restricted in its miniaturization.
Described microelectromechanical systems microphone utilizes semiconductor process that sound equipment induction elements such as oscillating plate and supporting bracket part all is manufactured on the silicon substrate.
In the korean application 10-2002-0074492 (applying date: disclose the microelectromechanical systems microphone on November 27th, 2002).Described microelectromechanical systems microphone is heat-treated with about 1100 ℃ high temperature in order to inject electronics at lower electrode.At this moment, described film (oscillating plate) is made of different materials such as metallicity lower electrode, silicon nitride film and silicon oxide layers in fact, and therefore the difference owing to thermal coefficient of expansion produces residual stress (compression stress or swelling stress) when high-temperature heat treatment.Along with being subjected to residual stress, described film can produce distortion or break (crack).And then when residual stress put on described film, described film was difficult to sound equipment vibration correctly, and the sound equipment that therefore is difficult to produce correctly is converted to the signal of telecommunication.
In addition, because described microphone is regulated the thickness of film by the downside of etching silicon substrate, so might make the in uneven thickness of described film.When described film in uneven thickness, film is irregular to the vibration of sound equipment, might be difficult to sound equipment correctly is converted to the signal of telecommunication.
In international publication number WO2007/112743 (open day: on 03 29th, 2007), disclose a kind of silica substrate and formed the microelectromechanical systems microphone manufacture method of carrying on the back volume (back volume).At this moment, to carry on the back volume 15 and oxidation porousness silicon structure 9 in order forming, and to form described porousness silicon structure, carry out the operation (1a-1h operation) of evaporation and etching conductive layer 2, metal level 3, silicon oxide layer 4 etc. etc. successively at described silicon substrate.Must carry out repeatedly operation in order to form described porousness silicon structure, thereby the manufacturing time of microelectromechanical systems microphone might increase significantly.In addition, because might be inhomogeneous according to the oxidation rate of the silicon of the described porousness silicon structure 9 of voltage conditions, the therefore also described back of the body volume 15 of etching unevenly.Inhomogeneous when the surface etching of described back of the body volume, the distance between then described film and the back of the body volume becomes inhomogeneous, therefore might be difficult to convert sound equipment to the signal of telecommunication exactly.
In addition, the difference of the thermal coefficient of expansion of described vibrating membrane and silicon substrate or silicon oxide layer is very big.But because described vibrating membrane contacts with silicon substrate by silicon oxide layer, so break because of the difference of thermal coefficient of expansion may produce in the position that contacts with silicon substrate of described vibrating membrane.
In addition, described two documents are the structures in silicon substrate stack membrane and supporting bracket, and therefore the height of described microelectromechanical systems microphone only can uprise.Therefore, the microphone of making miniaturization is restricted.
Summary of the invention
For addressing the above problem, the purpose of this utility model is to provide a kind of can make the minimized microelectromechanical systems microphone of residual stress at the position that film contacts with silicon substrate.
Another purpose of the present utility model is to provide a kind of and need not at film and supporting bracket adion and with the microelectromechanical systems microphone of heat.
It is a kind of than in the upside stacked film of silicon substrate and the structure of supporting bracket that another purpose of the present utility model is to provide, can easily carry out the planarization process of sacrifice layer, and can freely regulate the thickness of described film and supporting bracket, thereby can improve the microelectromechanical systems microphone of the acoustic characteristic of microphone.
Another purpose of the present utility model is to provide the microelectromechanical systems microphone more than a kind of spacing that the height of microelectromechanical systems microphone can be reduced between film and the supporting bracket.
The utility model one embodiment for achieving the above object provides a kind of microelectromechanical systems microphone, comprising: silicon substrate is formed with back of the body chamber; Supporting bracket, evaporation are formed with a plurality of sound holes at described silicon substrate; Film, interstitial mode evaporation is at described silicon substrate to separate with described supporting bracket; And stress buffer portion, evaporation is in the contact site of described film and silicon substrate.
Effect of the present utility model is as follows.
According to the utility model, have and to make the minimized effect of residual stress at the position that described film contacts with silicon substrate.And then, have the contact site that can prevent and produce the effect of breaking at described film and silicon substrate.
According to the utility model, have the distortion that prevents to cause film, thereby can normally carry out the effect that sound press is measured because of residual stress.
According to the utility model,, therefore has the effect of Micro Electronic Mechanical System die and asic chip being made a chip because film and supporting bracket are carried out evaporation with the electroless plating method under low temperature (about about 90 ℃ temperature) state.And then, have the effect that can make the microelectromechanical systems microphone with unified semiconductor process.
According to the utility model, can be minimized in described film and the residual effect that residual stress is arranged of supporting bracket itself owing under low-temperature condition, making the microelectromechanical systems microphone, therefore having.And then, have the contact site that prevents at described film and supporting bracket and silicon substrate and produce the effect of breaking.
According to the utility model, owing to utilize the electroless plating method to come vapor-deposited film and supporting bracket, therefore can easily regulate the thickness of described film and supporting bracket, thereby have the effect of stable acoustic characteristic and the sensitivity of enhancing sound equipment.
According to the utility model, owing to after the etching silicon substrate, form space (air gap) by vapor-deposited film and supporting bracket, thereby have the effect that can accurately and simply form described space.And then, have the height that can reduce the microelectromechanical systems microphone and the fixing effect of film and supporting bracket stably on substrate.
Description of drawings
Fig. 1 a to Fig. 1 c is illustrated in the profile that forms the operation of space formation portion among first embodiment of microelectromechanical systems microphone of the present utility model at silicon substrate.
Fig. 2 a to Fig. 2 c is the profile of operation of evaporation stress buffer portion of space formation portion that is illustrated in the silicon substrate of Fig. 1 c.
Fig. 3 a and Fig. 3 b are the profiles of operation of space formation portion vapor-deposited film that is illustrated in the silicon substrate of Fig. 2 C.
Fig. 4 a and Fig. 4 b are the profiles that is illustrated in the operation of evaporation sacrifice layer and supporting bracket on the film of Fig. 3 b.
Fig. 5 a to Fig. 5 c is that the profile of the operation in chamber and space is carried on the back in the silicon substrate formation that is illustrated in Fig. 4 b.
Fig. 6 is the synoptic diagram that is used for the effect of the film of key diagram 5c and stress buffer portion.
Fig. 7 is illustrated in the profile that forms the operation of space formation portion among second embodiment of microelectromechanical systems microphone of the present utility model at silicon substrate.
Fig. 8 a to 8c is illustrated in the profile of operation of space formation portion evaporation supporting bracket of the silicon substrate of Fig. 7.
Fig. 9 a and Fig. 9 b are the profiles that is illustrated in the operation of the upside evaporation sacrifice layer of supporting bracket of Fig. 8 c and stress buffer portion.
Figure 10 is the profile that is illustrated in the operation of the stress buffer portion of Fig. 9 b and sacrifice layer vapor-deposited film.
Figure 11 a and Figure 11 b are illustrated in the profile that silicon substrate forms the operation in back of the body chamber and space.
Description of reference numerals
10,50: silicon substrate 15,55: space formation portion
16,56: inclined plane 25,77: film
33,73: sacrifice layer 37,65: supporting bracket
41,81: back of the body chamber 45,85: space
20,70: the 20a of stress buffer portion, 20b, 20c, 70a, 70b, 70c: material layer
Embodiment
Specific embodiment in order to achieve the above object the utility model microelectromechanical systems microphone describes.
First embodiment to microelectromechanical systems microphone of the present utility model describes.
Fig. 1 a to Fig. 1 c is illustrated in the profile that forms the operation of space formation portion among first embodiment of microelectromechanical systems microphone of the present utility model at silicon substrate.
With reference to Fig. 1 a and Fig. 1 b, described microelectromechanical systems microphone comprises silicon substrate 10.At the both sides of described silicon substrate 10 evaporation just like silicon nitride (Si
3N
4) or silica (SiO
2) insulating protective layer 11,12 that waits (with reference to Fig. 1 a).At this moment, described silicon nitride utilizes the surperficial evaporation protective layer 11,12 of low pressure chemical vapour phase evaporation (LPCVD:Low Pressure Chemical Vapor Deposition) at silicon substrate 10.
The insulating protective layer 11 of the upside of described silicon substrate 10 is for forming space 15 etched (with reference to Fig. 1 b) of formation portion.At this moment, the upside insulating protective layer 11 of described silicon substrate 10 can utilize RIE (Reactive Ion Etching) device to come etching.
With reference to Fig. 1 c, utilize the upside of KOH solution or the described silicon substrate 10 of TMAH solution etching, form described space formation portion 15 with the degree of depth of having set.
At this moment, the mask material (not shown) as described space formation portion 15 can be suitable for silicon nitride (Si
3N
4) or silica (SiO
2) etc.
By described space formation portion 15 depth D are adjusted to the degree of depth of having set, can regulate the spacing between following film that will illustrate 25 and the supporting bracket 37.The depth D of described space formation portion 15 can be regulated according to concentration, etching period and the temperature etc. of KOH solution or TMAH solution.Concentration, etching period and the temperature etc. of described KOH solution or TMAH solution need suitably be regulated according to the degree of depth of space formation portion.
In addition, when utilizing KOH solution or TMAH solution to carry out etching, the edge of described space formation portion 15 forms the inclined plane 16 with about 54.74 ° angle a.At this moment, upward relative slow at the incline direction (111 directions) of silicon crystallization with the reaction speed of KOH solution or TMAH solution, go up relative fast in silicon crystallization vertical direction (100 direction) with the reaction speed of KOH solution or TMAH solution.Thereby the edge of described space formation portion 15 is etched into has inclined plane 16.
Fig. 2 a to Fig. 2 c is the profile of operation of evaporation stress buffer portion of space formation portion that is illustrated in the silicon substrate of Fig. 1 c.
With reference to Fig. 2 a to Fig. 2 c, the upside evaporation stress buffer portion 20 in the space of described silicon substrate 10 formation portion 15.Upside vapor-deposited film 25 in described space formation portion 15 and stress buffer portion 20.
Described stress buffer portion 20 forms by following operation.
At the space of described silicon substrate 10 formation portion 15 surface applied photonasty mask materials 21.By the exposure and the described photonasty mask material 21 that develops, the regional 22a that graphical (patterning) is used to form described stress buffer portion 20 (with reference to Fig. 2 a).At described regional 22a evaporation stress buffer 20 (with reference to Fig. 2 b) of portion that are used to form described stress buffer portion 20.Then, remove described photonasty mask material (with reference to Fig. 2 c).
Described stress buffer portion 20 can be made of the different a plurality of material layers of thermal coefficient of expansion.For example, described stress buffer portion 20 can be by chromium 20a (Cr), golden 20b (Au) and polyimides 20c laminations such as (Polyimide) and forms.
At this moment, from described silicon substrate 10, the thermal coefficient of expansion of described a plurality of material layer 20a, 20b, 20c can be big more the closer to film 25.This is elaborated with reference to following form.E represents modulus of elasticity (young ' s modulus) in following " table ", and a represents thermal coefficient of expansion.
[table]
Can be with the order lamination of chromium (thermal coefficient of expansion 4.9), gold (thermal coefficient of expansion 14.2) and polyimides (thermal coefficient of expansion 35) from described silicon substrate 10 to film 25 sides.Here, the thermal coefficient of expansion of silicon substrate is 2.6, is 2.7 as the thermal coefficient of expansion of the silicon nitride of the protective layer of silicon substrate, and the thermal coefficient of expansion of nickel film is 13.4.
Described stress buffer portion 20 is when described film 25 vibrations, and the cushioning effect by stress buffer portion 20 prevents to produce in the contact site of described film 25 and silicon substrate 10 breaks.
Fig. 3 a and Fig. 3 b are the profiles of operation of space formation portion vapor-deposited film that is illustrated in the silicon substrate of Fig. 2 C.
With reference to Fig. 3 a and Fig. 3 b, the upside vapor-deposited film 25 in the space of described silicon substrate 10 formation portion 15 and stress buffer portion 20.At this moment, form the air that air is passed through at described film 25 and pass through hole 25a (a) with reference to Fig. 3.Described film 25 is the oscillating plates that vibrate with sound press, and is the lower electrode of measuring the electric capacity of static capacity.
Described film 25 can carry out evaporation by electroless plating method (electroless plating).
Here, the electroless plating method is not accept electric energy to supply with from the outside, relies on reducing agent reducing metal ion, the method for precipitating metal on the surface of silicon substrate.This electroless plating method is compared with galvanoplastic, can make the thickness of film 25 even on the whole, also can form film 25 easily in addition on the face with complications.
The electroless plating method of described film 25 forms by following process.
At first, at the surface applied photonasty mask material 21 of the silicon substrate 10 that is formed with described space formation portion 15.By the exposure and the described photonasty mask material 21 that develops, graphically be used to form the zone of film 25.Make described patterned silicon face surface activation for carrying out the nickel electroless plating.By the surface of the silicon substrate 10 of surface activation, form nickel film 25 (a) described with reference to Fig. 3 by the electroless plating method.Remove described photonasty mask material 21 (with reference to Fig. 3 b) after forming described nickel film 25.At last, clean the surface of described film 25.
In addition, replace conductive ions etc. because described film 25 reduces under about 90 ℃ of left and right sides low temperature by electroless plating, thereby need not as prior art, to heat with about about 1100 ℃ high temperature for the described film 25 of evaporation.
In addition because described film 25 is made of metallic alloy, thereby can with the external circuit (example: asic chip) be electrically connected of measuring static capacity.Therefore, need not as prior art rete injection conductive ions at poly-silicon materials, carry out other heat operation so not be used in rete, thereby can reduce manufacturing process.
In addition, even the thermal coefficient of expansion of described film 25 and silicon substrate 10 there are differences, but because without heat, thereby on the contact site of described film 25 and silicon substrate 10, in the electroless plating operation, can produce pressure (compressive stress) or tensile stress (tensile stress) hardly as residual stress (residual stress).As a result, described film 25 can be out of shape because of residual stress hardly, thereby thereby can make described film 25 normal vibrations stablize acoustic characteristic.In addition, produce residual stress hardly, break thereby can prevent from the contact site of described silicon substrate and film, to produce in the contact site of described film and silicon substrate.
In contrast to this, when existing such electrodeposited coating method of passing through forms film 25, need switch on afterwards in the surperficial evaporation Seed Layer (seed layer) of silicon substrate.Current strength skewness on described Seed Layer is with the uneven intensity distributions of part.At this moment, conductive ions is gold-plated with uneven thickness on described film 25, and therefore the thickness of described film 25 might be inhomogeneous on the whole.But the utility model electroless plating method does not exist current density poor for film, thereby the thickness of film is even on the whole.
In addition, can be suitable for the soft conductive material that comprises nickel as described film 25.Because described film 25 is conductive materials, therefore described film 25 can conduct electricity.And then, because described film 25 is flexible materials, thereby can prevent to vibrate because of overcurrent or to be subjected to external impact damaged when described film 25.
In addition, the thickness of described film 25 can form the thickness of about 0.1～5 μ m.The thickness of described film 25 can be adjusted to suitable thickness according to the sound press of microelectromechanical systems microphone institute perception.
In addition, when electroplating described film 25, owing at first spray gold-plated use metallic vapour (vapor) to downside with the state that constitutes almost vertical or slight inclination from the upside of described space formation portion 15 by splash (sputter) or electron beam (E-beam).At this moment, can there be described film 25 and its electrode (not shown) risk of short-circuits on the inclined plane 16 of described space formation portion 15.But, when the described film 25 of electroless plating, even if owing to have on the tortuous face also evaporation easily, thereby described film is connected easily with (not shown) the not short circuit of its electrode.
Fig. 4 a and Fig. 4 b are the profiles that is illustrated in the operation of evaporation sacrifice layer and supporting bracket on the film of Fig. 3 b.
With reference to Fig. 4 a, at described space formation portion 15 evaporation sacrifice layers 33.At this moment because described sacrifice layer 33 evaporations are in the space formation portion that is etched in designated depth on the silicon substrate, thereby need be for the described sacrifice layer of evaporation other layers of evaporation or etching.Thereby, evaporation sacrifice layer and reduce manufacturing process easily.
Described sacrifice layer 33 top can with the conplane mode evaporation of the top formation of silicon substrate 10.At this moment, when described sacrifice layer 33 is the high relatively material of viscosity, can make the surface smoothing of described sacrifice layer 33 by cmp (CMP:Chemical Mechanical Polishing).In addition, when described sacrifice layer 33 is the low relatively material of viscosity, because the surface smoothing of described sacrifice layer 33 thereby need not carry out described cmp in addition.
Described sacrifice layer 33 can be formed by materials such as silica, photoresist, gold plated copper.
With reference to Fig. 4 b, described supporting bracket 37 can be with the upside of electroless plating mode (electroless plating) evaporation at sacrifice layer 33.Described supporting bracket 37 can be with the thickness evaporation of about 2～100 μ m.That such supporting bracket 37 is provided with in the mode that is opposite to film 25, as to measure the electric capacity of static capacity upper electrode.
The electroless plating method of described supporting bracket 37 forms by following process.At first, at the surface applied photonasty mask material (not shown) of described sacrifice layer 33.Expose and the described photonasty mask material that develops, graphically be used to form the zone of supporting bracket 37.At this moment, the zone that is used to form described supporting bracket 37 has the shape that can form a plurality of sound holes 38.Make described patterned supporting bracket 37 region surface activates for carrying out the nickel electroless plating.Described by the surface in supporting bracket 37 zones of surface activation, by electroless plating method evaporation nickel supporting bracket 37.Form after the described nickel supporting bracket 37, remove described photonasty mask material, form described supporting bracket 37.At last, clean the surface of described supporting bracket 37.The electroless plating method of this supporting bracket 37 in fact with the electroless plating method of above-mentioned film 25 much at one.
Because described supporting bracket 37 is reduced under about about 90 ℃ low temperature by electroless plating and is replaced conductive ions etc., thereby need not to heat with about about 1100 ℃ high temperature as prior art for the described supporting bracket 37 of evaporation.In addition because described supporting bracket 37 is made of metallic alloy, thereby can with the external circuit (example: asic chip) be electrically connected of measuring static capacity.Therefore, need not as prior art rete injection conductive ions at poly-silicon materials, thus need not carry out the such other heat operation of prior art at poly-silicon injection metallicity ion, thus manufacturing process can be reduced.
In addition, even the thermal coefficient of expansion of described supporting bracket 37 and silicon substrate 10 there are differences, but because without heat, thereby on the contact site of described supporting bracket 37 and silicon substrate 10, can produce pressure (compressive stress) or tensile stress (tensile stress) hardly as residual stress (residual stress).As a result, described supporting bracket 37 can be out of shape because of residual stress hardly, thereby can stablize acoustic characteristic.In addition, produce residual stress hardly between described supporting bracket 37 and the silicon substrate 10, thereby can prevent from described supporting bracket 37 and silicon substrate 10 contacts site, to produce break (crack).
In contrast to this, when existing such electrodeposited coating method of passing through forms supporting bracket 37, need switch on afterwards in the surperficial evaporation Seed Layer (seed layer) of silicon substrate.Electric current is with uneven intensity distributions on described Seed Layer.At this moment, conductive ions is gold-plated with uneven thickness on described supporting bracket 37, and the thickness of described supporting bracket 37 might be inhomogeneous on the whole.
In addition, described supporting bracket 37 can be formed by the soft conductive material that comprises nickel.Because described supporting bracket 37 is conductive materials, therefore described supporting bracket 37 can be conducted electricity.And then, because described supporting bracket 37 is flexible materials, thereby the breakage of described supporting bracket can prevent that described supporting bracket is subjected to external impact the time.
Fig. 5 a to Fig. 5 c is that the profile of the operation in chamber and space is carried on the back in the silicon substrate formation that is illustrated in Fig. 4 b.
With reference to Fig. 5 a to Fig. 5 b, at the insulating protective layer 12 coating photonasty mask materials (not shown) of the downside of described silicon substrate 10.By the exposure and the described photonasty mask material that develops, graphically be used to form the back of the body chamber 41 the zone (a) with reference to Fig. 5.
The zone that is used to form described back of the body chamber 41 can be by KOH solution or TMAH solution and by anisotropy wet corrosion (with reference to Fig. 5 b).At this moment, can use silicon nitride, silicon dioxide, photonasty material, gold or chromium as the mask material.
In addition, deep reactive ion etch method (DRIE:Deep Reactive Ion Etching) can be passed through by the anisotropy dry corrosion in the zone that is used to form described back of the body chamber 41.At this moment, can use silicon nitride, silicon dioxide, photonasty material, gold or chromium as the mask material.
So, along with the downside of silicon substrate 10 is etched, in the downside formation back of the body chamber 41 of described film 25.
With reference to Fig. 5 c, sound hole 38 etchings by described supporting bracket 37 are also removed described sacrifice layer 33.At this moment, along with described sacrifice layer 33 is removed, form space 45 between described film 25 and the supporting bracket 37.When described film 25 applies sound press, described space 45 makes described film 25 vibrate in the mode that does not contact with supporting bracket 37.
The spacing in described space 45 can be set in advance according to the evaporation thickness of the etch depth of described space formation portion 15 and described sacrifice layer 33.Therefore, described film 25 and supporting bracket 37 can evaporation in the inside of described silicon substrate 10 or the upside of surface rather than silicon substrate 10.As a result, the utility model compared with prior art can be reduced to microelectromechanical systems microphone height the height about supporting bracket 37 and film 25 height.
In addition, when when described film 25 applies sound press, the air of described film 25 makes air pass through described space 45 and back of the body chamber 41 by hole 25a, thereby makes 41 formation and atmospheric pressure pressure much at one in described back of the body chamber.And then, can make sound press normally put on described film 25.
To as the effect of the microelectromechanical systems microphone that constitutes of above-mentioned structure describe.
Fig. 6 is the synoptic diagram that is used to illustrate the effect of film and stress buffer portion.
With reference to Fig. 6, when described microelectromechanical systems microphone vibrated with sound press at described film 25, the spacing in space 45 changed between described film 25 and the supporting bracket 37.At this moment, change, convert tones into the signal of telecommunication by the static capacity that changes with the variation static capacity of the spacing in described space 45.
At this moment, when having residual compression stress (compressive stress) at described film 25, in film 25 vibration or when not vibrating, described stress buffer portion 20 all cushions the compression stress of described film 25.
In addition, when there was residual tensile stress in described film 25, in film 25 vibration or when not vibrating, described stress buffer portion 20 all cushioned the tensile stress of described film 25.
Thereby described stress buffer portion 20 can remove the buffering stress that produces in film 25 and silicon substrate 10 contacts site.In addition, described stress buffer portion 20 can prevent to be caused by residual stress the distortion of film 25, makes the sound equipment induction correct.
In addition, above-mentioned microelectromechanical systems microphone can be regulated the space 45 between described film 25 and the supporting bracket 37 by regulating the etch depth of space formation portion 15.
In addition, because described film 25 and supporting bracket 37 usefulness comprise the same substance evaporation of nickel, so operation becomes simple and manufacturing cost reduces.
In addition and since described supporting bracket 37 and film 25 by same operation evaporation at silicon substrate 10, so the manufacturing process of microelectromechanical systems microphone becomes simple and can increase output significantly.
In addition, because by electroless plating evaporation at low temperatures, therefore can being minimized on the contact site of described silicon substrate 10 and film 25 and supporting bracket 37, described film 25 and supporting bracket 37 produce residual stress.Thereby, can prevent from described film 25 distortion or on the contact site, produce to break.In addition, can simplify manufacturing process and minimizing manufacturing expense.
Below, second embodiment of the utility model microelectromechanical systems microphone is described.
Fig. 7 is illustrated in the profile that forms the operation of space formation portion among second embodiment of microelectromechanical systems microphone of the present utility model at silicon substrate.
With reference to Fig. 7, described microelectromechanical systems microphone comprises silicon substrate 50.At the both sides of described silicon substrate 50 evaporation such as silicon nitride (Si
3N
4) or silica (SiO
2) insulating protective layer 51,52 that waits.At this moment, utilize the surperficial evaporation protective layer 51,52 of low pressure chemical vapour phase evaporation (LPCVD:Low Pressure Chemical Vapor Deposition) at silicon substrate 50.
The insulating protective layer 51 of the upside of described silicon substrate 50 is etched in order to form space formation portion 55.At this moment, the upside insulating protective layer 51 of described silicon substrate 50 can come etching by RIE (Reactive Ion Etching) device.
Utilize the upside of KOH solution or the described silicon substrate 50 of TMAH solution etching, form described space formation portion 55 with the depth D of having set.At this moment, the mask material 61 as described space formation portion 55 can be suitable for silicon nitride (Si
3N
4) or silica (SiO
2) etc.
Be adjusted to the degree of depth of having set by depth D, can regulate the spacing between following film that will illustrate 77 and the supporting bracket 65 described space formation portion 55.The degree of depth of this space formation portion 55 can be by the decisions such as concentration, etching period and temperature of KOH solution or TMAH solution.
In addition, when utilizing KOH solution or TMAH solution to carry out etching, the edge of described space formation portion 55 forms the inclined plane 56 with about 54.74 ° of inclination angle a.At this moment, go up at silicon crystallization incline direction (111 crystallization direction) relative slow with the reaction speed of KOH solution or TMAH solution, on silicon crystallization vertical direction (100 crystallization direction) with KOH solution or TMAH solution and reaction speed relative fast.Thereby the edge of described space formation portion 55 forms inclined plane 56.
Fig. 8 a to 8c is illustrated in the profile of operation of space formation portion evaporation supporting bracket of the silicon substrate of Fig. 7.
With reference to Fig. 8 a to 8c, the upside evaporation supporting bracket 65 in described silicon substrate 50 space formation portions 55.Described supporting bracket 65 can be passed through electroless plating method evaporation.This supporting bracket 65 is to measure the lower electrode of the electric capacity of vibration according to static capacity.
The electroless plating method of described supporting bracket 65 forms by following process.At first, at the surface applied photonasty mask material 61 of the silicon substrate 50 that is formed with described space formation portion 55.By the exposure and the described photonasty mask material 61 that develops, the zone that graphically is used to form supporting bracket 65 and sound hole 66 (with reference to Fig. 8 a).Make the silicon face surface activation of described diagram plots for carrying out the nickel electroless plating.By the surface of the silicon substrate 50 of surface activation, form nickel supporting bracket 65 (with reference to 8b) described by the electroless plating method.Remove described photonasty material (with reference to Fig. 8 c) after forming described nickel supporting bracket 65.At last, clean the surface of described supporting bracket 65.
Because described supporting bracket 65 is reduced under about about 90 ℃ low temperature by electroless plating and is replaced conductive ions etc., thereby need not to heat with about about 1100 ℃ high temperature for the described supporting bracket 65 of evaporation.Because described supporting bracket 65 is made of metallic alloy, thus can with the external circuit (example: asic chip) be electrically connected of measuring static capacity.Therefore, need not be as prior art in order to inject metallicity ion at poly-silicon and to make it stable and carry out other heat operation, thereby can reduce manufacturing process.
In addition, even the thermal coefficient of expansion of described supporting bracket 65 and silicon substrate 50 there are differences, but owing to, can produce compression stress (compressive stress) or tensile stress (tensile stress) on the contact site of described supporting bracket 65 and silicon substrate 50 hardly as residual stress (residual stress) without heat.As a result, described supporting bracket 65 can be out of shape because of residual stress hardly, breaks thereby can prevent to produce on the contact site of described supporting bracket 65 and silicon substrate 50.
In contrast to this, when existing such electrodeposited coating method of passing through forms supporting bracket 65, need switch on afterwards in the surperficial evaporation Seed Layer (seed layer) of described silicon substrate.At this moment, current strength distributes in the uneven mode of part on described Seed Layer.At this moment, conductive ions is gold-plated with uneven thickness on described supporting bracket, and therefore the thickness of described supporting bracket might be inhomogeneous on the whole.But electroless plating method of the present utility model does not exist current density poor to supporting bracket, thereby supporting bracket thickness is even on the whole.
In addition, as the described supporting bracket 65 applicable soft conductive materials that comprise nickel.Because described supporting bracket 65 is conductive materials, therefore described supporting bracket 65 can be conducted electricity.In addition, because described supporting bracket 65 is flexible materials, thereby can prevent described supporting bracket 65 to be subjected to external impact and the quilt breakage.
In addition, the thickness of described supporting bracket 65 can form the thickness of about 2～100 μ m.The thickness of described supporting bracket 65 can be adjusted to suitable thickness according to the sound press of microelectromechanical systems microphone institute perception.
In addition, when electroplating described supporting bracket 65, owing at first spray gold-plated use metallic vapour (vapor) to downside with the state that constitutes almost vertical or slight inclination from the upside of described space formation portion 55 by splash (sputter) or electron beam (E-beam).At this moment, there are described supporting bracket 65 and its electrode (not shown) risk of short-circuits on the inclined plane 56 of described space formation portion 55.But, when the described supporting bracket 65 of electroless plating, even if owing to have on the tortuous face also evaporation easily, thereby described supporting bracket is connected easily with (not shown) the not short circuit of its electrode.
Fig. 9 a and Fig. 9 b are the profiles that is illustrated in the operation of the upside evaporation sacrifice layer of supporting bracket of silicon substrate and stress buffer portion.
With reference to Fig. 9 a, at described space formation portion 55 evaporation sacrifice layers 73.At this moment because described sacrifice layer 73 evaporations are in the space formation portion 55 that is etched in silicon substrate 60 with designated depth D, thereby need be for the described sacrifice layer 73 of evaporation other layers of evaporation or etching.Thereby, evaporation sacrifice layer and reduce manufacturing process easily.
Described sacrifice layer 73 top can with the conplane mode evaporation of the top formation of silicon substrate 50.At this moment, when described sacrifice layer 73 is the high relatively material of viscosity, can make the surface smoothing of described sacrifice layer 73 by cmp (CMP:Chemical Mechanical Polishing).In addition, when described sacrifice layer 73 is the low relatively material of viscosity, because the surface smoothing of described sacrifice layer 73 thereby need not carry out described cmp in addition.
Described sacrifice layer 73 can be formed by materials such as silica, photoresist, gold plated copper.
With reference to Fig. 9 b, in the upper edge evaporation stress buffer portion 70 of described sacrifice layer 73.
Described stress buffer portion 70 forms by following operation.
At first, at the surface applied photonasty mask material 72 of described sacrifice layer 73.By the exposure and the described photonasty mask material 72 that develops, graphically be used to form the regional 72a of stress buffer portion 70.In regional 72a evaporation stress buffer portion of the described stress buffer portion that is used to form 70 70.Then, remove photonasty mask material.
Described stress buffer portion 70 can be formed by thermal coefficient of expansion different a plurality of material layer 70a, 70b, 70c.For example, described stress buffer portion 70 is formed by chromium 70a (Cr), golden 70b (Au) and polyimides 70c laminations such as (Polyimide).
At this moment, the thermal coefficient of expansion of described a plurality of material layer 70a, 70b, 70c can be close then big more to film 77 sides more from described silicon substrate 50.For example, from described silicon substrate 50 to film 77 sides near can be with chromium (thermal coefficient of expansion 4.9), the order lamination of gold (thermal coefficient of expansion 14.2) and polyimides (thermal coefficient of expansion 35).Here, the thermal coefficient of expansion of silicon substrate is 2.6, is 2.7 as the thermal coefficient of expansion of the silicon nitride of the protective layer of silicon substrate, and the thermal coefficient of expansion of nickel film is 13.4.About the rerum natura of described material layer shown in above-mentioned " table ".
Described stress buffer portion 70 is when described film 77 vibrations, and the cushioning effect by a plurality of material layer 70a, 70b, 70c prevents to break in the generation of the contact site of described film 77 and silicon substrate 50.The effect of this stress buffer portion 70 is identical with above-mentioned essence, therefore omits its explanation.
Figure 10 is the profile that is illustrated in the operation of stress buffer portion and sacrifice layer vapor-deposited film.
With reference to Figure 10, described film 77 can be at the upside of sacrifice layer 73 with electroless plating mode evaporation.Described film 77 can be with the thickness evaporation of about 0.1～5 μ m.
The electroless plating method of described film constitutes by following process.
At first, at the surface applied photonasty mask material (not shown) of described sacrifice layer 73.By the exposure and the described photonasty mask material that develops, graphically be used to form the zone of film 77.Described patterned film 77 zones that are used for make its surface activation for carrying out the nickel electroless plating.By the surface in film 77 zones of surface activation, form nickel film 77 described by the electroless plating method.Remove described photonasty material after forming described nickel film 77.At last, clean the surface of described film 77.
Because described film 77 reduces under about about 90 ℃ low temperature by electroless plating and replaces conductive ions etc., thereby need not to heat with about about 1100 ℃ high temperature as prior art for the described film 77 of evaporation.
Because described film 77 is made of metallic alloy, thus can with the external circuit (example: asic chip) be electrically connected of measuring static capacity.Therefore, need not carry out injecting the other heat operation of metallicity ion to described film 77.
Even the thermal coefficient of expansion of described film 77 and silicon substrate 50 there are differences, but because without heat, thereby on the contact site of described film 77 and silicon substrate 50, can produce compression stress (compressive stress) or tensile stress (tensile stress) hardly as residual stress (residual stress).As a result, described film 77 can be out of shape because of residual stress hardly, breaks thereby can prevent to produce on the contact site of described film 77 and silicon substrate 50.
In addition, described film 77 can be formed by the soft conductive material that comprises nickel.Because described film 77 is conductive materials, thereby can switch on.In addition, because described film 77 is flexible materials, thereby can prevent overcurrent or external impact and the breakage that produces.
Figure 11 a and Figure 11 b are illustrated in the profile that silicon substrate forms the operation in back of the body chamber and space.
With reference to Figure 11 a, at the insulating protective layer 52 coating photonasty mask materials of the downside of described silicon substrate 50.By the exposure and the described photonasty mask material that develops, graphically be used to form the zone in back of the body chamber 81.
The zone that is used to form described back of the body chamber 81 can be by KOH solution or TMAH solution and by the anisotropy wet corrosion.At this moment, can use silicon nitride, silicon dioxide, photonasty material, gold or chromium as the mask material.
In addition, deep reactive ion etch method (DRIE:Deep Reactive Ion Etching) can be passed through by the anisotropy dry corrosion in the zone that is used to form described back of the body chamber 81.At this moment, can use silicon nitride, silicon dioxide, photonasty material, gold or chromium as the mask material.
So, along with the downside of silicon substrate 50 is etched, in the downside formation back of the body chamber 81 of described supporting bracket 65.
With reference to Figure 11 b, the sound hole 66 by described supporting bracket 65 comes etching and removes described sacrifice layer 73.At this moment, along with described sacrifice layer 73 is removed, form space 85 between described film 77 and the supporting bracket 65.When described film 77 applies sound press, described space 85 makes described film 77 vibrate in the mode that does not contact with supporting bracket 65.
The spacing in described space 85 can be set in advance according to the etch depth of silicon substrate 50 and described space formation portion 55 evaporation height.Therefore, described film 77 and supporting bracket 65 can evaporation in described silicon substrate 50 inside or surface rather than silicon substrate 50 upsides.As a result, the utility model compared with prior art can be reduced to microelectromechanical systems microphone height the height about supporting bracket 65 and film 77 height.
In addition, when when described film 77 applies sound press, the air of described film 77 makes air pass through described space 85 and back of the body chamber 81 by hole 77a, forms and atmospheric pressure pressure much at one thereby make in described back of the body chamber 81 and space 85.And then, can make sound press normally put on described film 77.
Above-mentioned microelectromechanical systems microphone can be regulated the space 85 between described film 77 and the supporting bracket 65 by regulating the etch depth of space formation portion 55.
In addition, because described film 77 and supporting bracket 65 usefulness comprise the same substance evaporation of nickel, so operation becomes simple and can reduce manufacturing cost.
In addition and since described supporting bracket 65 and film 77 by same operation evaporation at silicon substrate 50, so the manufacturing process of microelectromechanical systems microphone becomes simple and can significantly increase output.
In addition, because described film 77 and supporting bracket 65 be by electroless plating method evaporation at low temperatures, thereby can be minimized in and produce residual stress on the contact site of described silicon substrate 50 and film 77 and supporting bracket 65.Thereby, can prevent from the distortion of described film 77 or on the contact site, produce to break.And, can simplify manufacturing process and reduce manufacturing expense.
The possibility of utilizing on the industry
The utility model can prevent the generation of breaking by reducing residual stress on the contact site of film and gripper shoe, thereby industrially has and utilize significantly possibility.
Claims (7)
1. microelectromechanical systems microphone comprises:
Silicon substrate is formed with back of the body chamber;
Supporting bracket, evaporation are formed with a plurality of sound holes at described silicon substrate;
Film, interstitial mode evaporation is at described silicon substrate to separate with described supporting bracket; And
Stress buffer portion, evaporation is in the contact site of described film and silicon substrate.
2. microelectromechanical systems microphone according to claim 1 is characterized in that, described stress buffer portion is made of the different a plurality of material layers of thermal coefficient of expansion.
3. microelectromechanical systems microphone according to claim 2 is characterized in that, from described silicon substrate, the thermal coefficient of expansion of described a plurality of material layers is big more the closer to film.
4. microelectromechanical systems microphone according to claim 2 is characterized in that, described stress buffer portion comprises chromium, gold and polyimides material layer.
5. microelectromechanical systems microphone according to claim 1, it is characterized in that, form space formation portion with the deep etching of having set at described silicon substrate, described film evaporation is at the downside in space or the upside of silicon substrate, described supporting bracket to separate with film interstitial mode evaporation at the downside in space or the upside of silicon substrate.
6. microelectromechanical systems microphone according to claim 5 is characterized in that, the spacing in the space between described film and the supporting bracket is regulated according to the degree of depth of described space formation portion.
7. microelectromechanical systems microphone according to claim 1 is characterized in that, described film or supporting bracket are by electroless plating method evaporation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0132682 | 2009-12-29 | ||
| KR1020090132682A KR101109095B1 (en) | 2009-12-29 | 2009-12-29 | Mems microphone and manufacturing method of the same |
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| Publication Number | Publication Date |
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| CN201937821U true CN201937821U (en) | 2011-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010206481591U Expired - Lifetime CN201937821U (en) | 2009-12-29 | 2010-12-03 | Microphone of microelectronic mechanical system |
| CN201010579578.9A Expired - Fee Related CN102111705B (en) | 2009-12-29 | 2010-12-03 | Mems microphone and manufacture method thereof |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010579578.9A Expired - Fee Related CN102111705B (en) | 2009-12-29 | 2010-12-03 | Mems microphone and manufacture method thereof |
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| Country | Link |
|---|---|
| KR (1) | KR101109095B1 (en) |
| CN (2) | CN201937821U (en) |
| TW (1) | TWI505723B (en) |
| WO (1) | WO2011081288A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111263282A (en) * | 2018-11-30 | 2020-06-09 | 达菲感测有限公司 | Condenser microphone and manufacturing method thereof |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101355434B1 (en) * | 2012-06-12 | 2014-01-28 | 한국생산기술연구원 | Manufacturing method for plastic chamber plate with ordered porous polymer membrane |
| KR20140040997A (en) | 2012-09-27 | 2014-04-04 | 한국전자통신연구원 | Mems microphone and fabrication method thereof |
| CN106604195A (en) * | 2015-10-14 | 2017-04-26 | 天津修瑕科技有限公司 | Security method based on electronic information system keys |
| CN107465983B (en) * | 2016-06-03 | 2021-06-04 | 无锡华润上华科技有限公司 | MEMS microphone and preparation method thereof |
| CN108609573A (en) * | 2016-12-12 | 2018-10-02 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method thereof, electronic device |
| CN111131986A (en) * | 2019-12-31 | 2020-05-08 | 歌尔股份有限公司 | Dustproof structure, microphone packaging structure and electronic equipment |
| WO2024034931A1 (en) * | 2022-08-08 | 2024-02-15 | 삼성전자주식회사 | Electronic apparatus comprising audio input device |
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| US6566251B2 (en) * | 2001-03-29 | 2003-05-20 | Georgia Tech Research Corporation | Method for selective deposition of materials in micromachined molds |
| EP1246502A1 (en) * | 2001-03-30 | 2002-10-02 | Phone-Or Ltd | Microphone |
| US7045868B2 (en) * | 2003-07-31 | 2006-05-16 | Motorola, Inc. | Wafer-level sealed microdevice having trench isolation and methods for making the same |
| JP2006068843A (en) | 2004-08-31 | 2006-03-16 | Sony Corp | Micro electromechanical element, optical micro electromechanical element, light modulation element and laser display |
| KR100685092B1 (en) * | 2005-03-14 | 2007-02-22 | 주식회사 케이이씨 | Micro-phone using Micro Electro Mechanical Systems process and manufacturing method the same |
| US20060291674A1 (en) * | 2005-06-14 | 2006-12-28 | Merry Electronics Co. Ltd. | Method of making silicon-based miniaturized microphones |
| KR100893558B1 (en) | 2005-08-10 | 2009-04-17 | 세이코 엡슨 가부시키가이샤 | Semiconductor device, manufacturing method for semiconductor device and electronic component |
| TWI285509B (en) * | 2006-02-10 | 2007-08-11 | Univ Nat Chunghsing | Sawing-free process for manufacturing wafer of capacitor-type silicon microphone |
| WO2007112743A1 (en) * | 2006-03-30 | 2007-10-11 | Sonion Mems A/S | Single die mems acoustic transducer and manufacturing method |
| JP2008092561A (en) * | 2006-09-04 | 2008-04-17 | Yamaha Corp | Semiconductor microphone unit, manufacturing method thereof, and method of mounting semiconductor microphone unit |
| EP1931173B1 (en) * | 2006-12-06 | 2011-07-20 | Electronics and Telecommunications Research Institute | Condenser microphone having flexure hinge diaphragm and method of manufacturing the same |
| TWI358235B (en) | 2007-12-14 | 2012-02-11 | Ind Tech Res Inst | Sensing membrane and micro-electro-mechanical syst |
| US8258591B2 (en) * | 2008-01-16 | 2012-09-04 | Solid State System Co., Ltd. | Micro-electro-mechanical systems (MEMS) device |
| WO2009146494A1 (en) * | 2008-06-04 | 2009-12-10 | Cochlear Limited | Implantable microphone diaphragm stress decoupling system |
-
2009
- 2009-12-29 KR KR1020090132682A patent/KR101109095B1/en not_active IP Right Cessation
-
2010
- 2010-10-29 WO PCT/KR2010/007535 patent/WO2011081288A2/en active Application Filing
- 2010-12-03 TW TW099142137A patent/TWI505723B/en not_active IP Right Cessation
- 2010-12-03 CN CN2010206481591U patent/CN201937821U/en not_active Expired - Lifetime
- 2010-12-03 CN CN201010579578.9A patent/CN102111705B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111263282A (en) * | 2018-11-30 | 2020-06-09 | 达菲感测有限公司 | Condenser microphone and manufacturing method thereof |
| CN111263282B (en) * | 2018-11-30 | 2021-11-09 | 达菲感测有限公司 | Condenser microphone and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102111705B (en) | 2015-12-09 |
| KR101109095B1 (en) | 2012-01-31 |
| KR20110076074A (en) | 2011-07-06 |
| WO2011081288A3 (en) | 2011-11-03 |
| WO2011081288A2 (en) | 2011-07-07 |
| TW201127088A (en) | 2011-08-01 |
| CN102111705A (en) | 2011-06-29 |
| TWI505723B (en) | 2015-10-21 |
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