1279154 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種晶片的製造方法，特別是指一種 微型麥克風之晶片的製造方法。 曰 【先前技術】 自1984年第—顆利用晶片製作的微型麥克風發表後， 由於具有體積小、重量輕，利用半導體與微機電製程技術1279154 IX. Description of the Invention: [Technical Field] The present invention relates to a method of manufacturing a wafer, and more particularly to a method of manufacturing a wafer of a micro-microphone.曰 [Prior Art] Since the publication of the micro-microphone made of wafers in 1984, due to its small size and light weight, the use of semiconductor and micro-electromechanical process technology
可以精確的控制尺寸、圖像’並可以批次生產、成本低廉 ’且易與1C整合集成等等優點’因此微型麥克風的研究盘 製造曰益廣泛。 〃 • ， 一般微型麥克風可分為壓電式、壓阻式以及電容式三 類’而其中’由於電容式微型麥克風因具有較高的靈敏: 、較低的雜訊、低失真，與較低的功率消耗等優點，而成 為目前微型麥克風發展的主流。 „而，電容式微型麥克風中的晶片，可簡單的區分成由 • I—基板經過多數道半導體製程過程，例如微影技術、姓 刻技術、蒸（濺）鑛技術..等，切割製成的單晶片，以及分 - W由兩基板經過多數道半導體製程過程製成二晶片後，: 接合（bonding )的雙晶片式二種。 然而，無論是單晶片式或是雙晶片式電容式微型麥克 =所封裝的晶片’其共同的缺點都在於將製備完成之晶 切割（sawing)」成複數晶片時，難免會損及單一晶片 的結構’造成晶片中微元件構造的損壞，進而導致整體製 程良率的降低。 1279154 此外’晶#都必須進行體餘刻（bulk etching)，以形成 電谷式微型麥克風之晶片所必備的「振膜（仙細㈤」與 「氣室（air gap)」等微元件構造；而需要進行蝕刻的部分 越多、或進行蝕刻的過程越長，製程也就越不易掌控，所 製得之成品品質也因而變異較大，製程良率也因此無法提 昇。 因此，如何改善電容式微型麥克風之晶片的製程以提 昇晶片成品品質、製程良率，或是提出其他種類方式進行 的製程，或是根本上提出新的晶片的結構等等，是業界、 學界一直努力的目標。 【發明内容】 因此’本發明之主要目的，即在提供一種利用電鍍以 及脫離技術（Transfer Technique )以提高麥克風晶片的製程 良率以及品質之電容式微型麥克風之麥克風晶片的製造方 法，及以此方法所製成的麥克風晶片。 於是，本發明電容式微型麥克風之麥克風晶片的製造 方法，包含以下步驟： (a) 在一基板上依序定義形成一脫離層、一第一電極 層，及一振膜層。 (b) 在該振膜層上形成一犧牲層，使該犧牲層遮覆該 振膜層之一振膜區域，且使該振膜層之一環圍該振膜區域 之一種晶區域裸露。 (c) 在該犧牲層與該振膜層之種晶區域上對應該犧牲 層與該種晶區域之態樣依序定義一第二電極層，及一強固 1279154 層’且该第二電極層與該強固層對應該振膜區域形成一音 孔圖像’而使該犧牲層對應該音孔圖像之區域以對應該音 孔圖像的態樣裸露。 (d) 自該犧牲層對應該音孔圖像之區域的裸露處蝕刻 移除違犧牲層，使該第一電極層、振膜層、第二電極層與 該強固層共同形成—麥克風晶片。 (e) 以對應該脫離層之形成材料的蝕刻液蝕刻移除該 脫離層’钱刻移除該脫離層使該麥克風晶片與該基板相分 離，取得該麥克風晶片。 此外’本發明一種電容式微型麥克風的麥克風晶片， 封裝於一殼座中而成電容式微型麥克風，該麥克風晶片包 含一振膜及一與該振膜連結之氣室單元。 該振膜與該殼座之一封裝壁相間隔地連結，而與該封 裝壁共同界定出一供該振膜形變用之振動空間，該振膜具 有一以導體材料構成的第一電極層，及一以絕緣材料構成 的振膜層，該振膜層並包括一振膜區域，及一環圍該振膜 區域的種晶區域，該振膜區域可因外界的聲能傳遞作用而 產生對應形變。 一氣室單元，具有一以導體材料構成的第二電極層， 及疋義形成於該第二電極層上的強固層，該第二電極層 與该強固層並共同形成一自該種晶區域向相反於該第一電 極層方向延伸的氣室壁，及一具有一音孔圖像之背板，該 背板、氣室壁與該振膜層之振膜區域共同界定一以該音孔 圖像與外界相通以供氣流流動之氣室。 1279154 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之二個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 參閱圖1，本發明電容式微型麥克風之麥克風晶片的製 造方法之第一較佳實施例，是可製備如圖2所示的麥克風 晶片2。 首先參閱圖2,麥克風晶片2包含一振膜21，及一與 振膜21相連結的氣室單元22。 振膜21為業界所稱之「平板式」振膜21，具有一第一 電極層211，及一形成於第一電極層211上的振臈層212， 振膜層212並包括一振膜區域213，及一環圍振膜區域213 的種晶區域214，振膜區域213可因外界的聲能作用而產生 對應形變。通常，第一電極層211是以例如鉻、金、鈕、鉑 、鋁、鈀、鎢、銅、鎳等金屬，或及此等金屬之組合為材 料構成，在此以鉻/金為例說明；而振膜層212可選擇例如 聚亞醯胺（polyimide)、氮化矽、氧化矽、金屬，及此等之 組合為材料構成，在此則以聚亞醯胺為例說明。 氣室單元22具有一第二電極層221，及一定義形成於 第二電極層221上的強固層222，第二電極層221與強固層 222並共同形成一自種晶區域214向相反於第一電極層 方向延伸的氣室壁223，及一具有一音孔圖像224之背板 1279154 225，背板225、氣室壁223與振膜層212之振膜區域2i3 界定出一以音孔圖像224與外界相通以供氣流流動之 II室226。同樣地，帛二電極層221是以例如絡、金、紐、 鉑二鋁、鈀、鎢、銅、鎳等金屬，或及此等金屬之組合為 材料構成，在此以鉻/金為例說明；而強固層222則可選擇 例如鎳、銅、始、鐵、壓克力、聚亞醯胺，及此等之組合 • 為材料構成，在此則以鎳為例說明。 | 上述麥克風晶片2在配合如圖1所示的製造方法詳細 說明後，當可更加清楚的明白。 參閱圖1，製造麥克風晶片2時，是先實施步驟u，以 〈⑽〉石夕晶1W乍為基板41，經過標準潔淨步驟清洗後，在 基板41上以電子束蒸鍍厚度約3以瓜的鋁作為脫離層42。 由於此脫離層42的存在，是為了後續完成麥克風晶片 2之後《特定的餘刻液溶钱而可將麥克風晶# 2與基板 相刀離以直接取得完整的麥克風晶片2，因此，脫離 | I的構成材料’只需對應基板41與麥克風晶片2，而當以 ㈣液^時，只會錢脫離層42而不會損及基板Μ與 麥克風:曰片2即可’因此其他如氧化物、高分子材料，或 此等材料之組合均可以應用；在此，則以紹並對應後續選 用鹽酸為餘刻液為例說明。 —接著進行步驟12，利用黃光微影在脫離層42上定義出 預定圖像冑卩熱阻式蒸鍍機蒸鍍厚度約為Wnm的鉻/金 (Cr/Au)再移除（Lift_〇ff)非所需的部分後，定義形成 具有預定圖像的第一電極層211。 1279154 然後進行步驟13，再次利用黃光微影在第一電極層2ιι 上以感光材料，如聚亞醢胺（polyimide )定義出具有預定 圖像的振膜層212，完成振膜21的製作。 接著進行步驟14，以電漿輔助化學氣相沉積系統（ PECVD)在振膜層212之振膜區域213上沉積厚度約為3以 m的二氧化矽，作為後續進行蝕刻掏空的犧牲層43 ( sacrificial layer) ° 由於此犧牲層43的存在，是為了形成後續完成氣室單 凡22的成型態樣，因此，犧牲層之構成材料的選用原則為 當蝕刻移除犧牲層時，蝕刻液不會傷害麥克風其他結即可 因此，對應本例所選用的二氧化石夕之外，其他如高分子 材料、鋁等均可以應用。 接著再進行步驟15，利用黃光微影在犧牲層43相反於 連、、、《振膜21的上表面定義出預定的音孔圖像態樣後， 以熱阻式蒸鍍機在振膜層212之種晶區域214與犧牲層43 上蒸鍵尽度約為150nm的鉻/金（Cr/Au)，再移除（Lift_〇ff )非所需的部分後，定義形成具有預定音孔圖像224態樣 的第二電極層221。 繼續進行步驟16,以第二電極層221作為種晶層（ seed layer)，電鍍足夠厚的鎳（Ni)形成強固層222，此時 ，第二電極層221與強固層222對應振膜區域213所形成 的音孔圖像224態樣使得犧牲層43對應此音孔圖像224態 樣的區域，以對應音孔圖像224的態樣裸露。 接著進行步驟17，利用氫氟酸緩衝液（B〇E )自犧牲 10 1279154 應音孔圖像224的裸露處向下餘刻掏空犧牲層43, 在振膜21上完成氣室單元22的製作。 2進行步驟18’以鹽酸（HC1)钱刻掉脫離層42, 示的:克ί:Γ2,2二基板41相分離’即可製得如圖2所 炎 日日’同時，基板41也可再回收利用。 造方in3’本發明電容式微型麥克風之麥克風晶片的製 晶片’5。較佳實施例’是可製備如圖4所示的麥克風 實參閱圖4，並同時參閱圖2作-比較，以第二較佳 成的麥克造方法所製成的麥克風晶片5,與上例所製 例所製# 在構造上極為相似，其不同處僅在於上 斤1成之麥克風晶片2的振膜21 , =:之麥克風晶™ 51屬「=:膜: 重複贊述52、5的構造均相類似’在此不再多加 兄風晶片5的構造。 閱曆| ^ 目3’上述振膜51 $「㈣式」振膜的麥克風晶 首：下的詳細說明後，當可更加清楚的明白。 經過;步驟31 ’以〈⑽〉砂晶圓作為基板41， 義出L 驟清洗後，制黃光微影在基板41上先定 義出預定的皺折圖像44。 為脫雜^進仃步驟32，以電子束蒸鑛厚度約3#m的銘作 馮脫離層42。 預定圖>^仃步驟33 ’利用黃光微影在脫離層42上定義出 < ，以熱阻式蒸鍍機蒸鍍厚度約為150nm的鉻/金 1279154 (Cr/Au)，再移除（Lift_Off)非所需的部分後，配合皺折 圖像44而定義形成具有預定圖像的第一電極層211。 然後進行步驟34，再次利用黃光微影在第一電極層211 上以感光材料，如聚亞醯胺（polyimide )定義出具有預定 圖像的振膜層212，完成皺折式振膜51的製作。 接著進行步驟35，以電漿輔助化學氣相沉積系統（ PECVD)在振膜層212之振膜區域213上沉積厚度約為3〆 _ m的二氧化矽，作為後續進行蝕刻掏空的犧牲層43。 接著再進行步驟36，利用黃光微影在犧牲層43相反於 連結振膜51的上表面定義出預定的音孔圖像224後，以熱 阻式蒸鍍機在振膜層212之種晶區域214與犧牲層43上蒸 鍍厚度約為15〇nm的鉻/金（Cr/Au)，再移除（Uft_〇ff)非 所需的部分後，定義形成具有預定音孔圖像224態樣的第 二電極層221。 繼續進行步驟37，以第二電極層221作為種晶層（ _ seed layer)，電鍍足夠厚的鎳（Ni)形成強固層222，此時 ，第二電極層221與強固層222對應振膜區域213所形成 • 的音孔圖像224態樣使得犧牲層43對應此音孔圖像224態 樣的區域，以對應音孔圖像224的態樣裸露。 接著進行步驟38,利用bqe自犧牲層43對應音孔圖 像224態樣的裸露處向下餘刻掏空犧牲I Μ，而在敞折式 振膜51上完成氣室單元22的製作。 最^進行步驟39，以鹽酸（HC1)蝕刻移除脫離層42 而使仔麥克風晶片5與基板41相分離，以取得麥克風晶 12 1279154 片5，同時，基板41也可再回收利用。 一般包含有大量集積有大量電路的晶片，在晶片製備 完成後，必須經過封裝（package )成電子元件（device ) 後才能簡易地實際應用。 同樣地，以上述本發明電容式微型麥克風之麥克風晶 片的製造方法所製得的麥克風晶片2、5，在將第一、二電 極層211、221寫入電荷成電容，並與可將電容變化轉換成 電壓變化之場效電晶體（FET，圖未示出）共同封裝入一可 供聲能穿透之殼座61後，即可製得例如圖5所示，振膜21 與殼座61之底壁62相間隔地連結後，與底壁62共同界定 形成供振膜21形變所需之振動空間63的電容式微型麥克 風7，或是如圖6所示，以氣室單元22與殼座61之底壁 62相間隔地連結，且使振膜21與殼座61之周壁料形成有 仏振膜21幵>變所需之振動空㈤63 容式微型麥克風 ’而能感應外界聲能變化，並將此變化對應轉換成電子訊 號’進行實際應用。由於無論是「平板式」振膜21或是「 皺折式」振媒51的麥克風晶片2、5，其差異僅在振膜21 爽51的態樣而已’因此圖示中僅以振膜21為「平板式」之 夕風日日片2封裝成電容式微型麥克風7、7,進行說明。 封梦上述麥克風晶片2、5也可以直接應用於系統級 虚—、/、即無須殼座而直接封裝於電路板（B0ard)上，惟 ，、-般晶片較不同的是， 的聲能所作關，㈤時膜卜51被外界 择氣相 间時必須預留供振膜21、51形變所需之 振動空間63，由於卜 小艾所而之 、荨封裝應用的形式種類眾多，在此不 13 1279154 在多加舉例說明。 由上述說明可知，本發明電容式微型麥克風之麥克風 晶片的製造方法，主要是利用黃光微影、蒸鍍與電鍵等技 術，以導體材料-體定義出麥克風晶片2、5的絕大多數結 構（僅振膜層212、212,因結構電性與頻率響應需求為非導 體材料），並搭配犧牲層43的結構，進而可精準的控制進 行㈣掏空以製成麥克風晶片2、5，之後，再應用脫離技 誠刻掉脫離層42以分離麥克風晶片2、5與基板41，從 而取得麥克風晶片2、5並可將基板41再行喊利用，不 彳-可以避免體#刻製成較不易精確掌控的缺點，同時又可 免於因切割造成晶片微元件結構的損壞，而可確實提高整 體夕克風晶片的品質與製程良率，確實達到本發明的創作 目的。 ^惟以上所述者，僅為本發明之較佳實施例而已，當不 、此限疋本發明貫施之範圍，即大凡依本發明申請專利 ^ _及說明書内容所作之簡單的等效變化與修飾，皆仍屬 本發明專利涵蓋之範圍内。 【圓式簡單說明】 圖1疋一流程圖，說明本發明電容式微型麥克風之麥 克風晶片的製造方法之第一較佳實施例； ，圖2是一剖視示意圖，說明以圖1之本發明電容式微 里麥克風之麥克風晶片的製造方法所製成的麥克風晶片； 圖3是一流程圖，說明本發明電容式微型麥克風之麥 克風晶片的製造方法之第二較佳實施例； 14 1279154 圖4是〜 ^ , 剖視示意圖，# 夕風之麥克風晶片的製造方圖3之本發明電容式微 圖5是—剖視示意圖，、成的麥克風晶片； 封裝成-電容式微型麥克風，·及w圖2所示之麥克風晶片 圖6是一剖視示意圖，說明以圖2所示 封裝成另一態樣之電容式微型麥克風。 ’、之麥克風晶片It is possible to precisely control the size, image 'and can be batch-produced, low cost' and easy to integrate with 1C, etc.' Therefore, the research and development of micro-microphones has a wide range of benefits. 〃 • , General micro-microphones can be divided into piezoelectric, piezoresistive and capacitive three types, and [because of the capacitive micro-microphone because of its high sensitivity: low noise, low distortion, and lower The power consumption and other advantages have become the mainstream of the current development of miniature microphones. „And, the wafer in the capacitive micro-microphone can be easily divided into the I-substrate through most of the semiconductor manufacturing process, such as lithography, surname technology, steaming (splashing) mining technology, etc. The single wafer, and the sub-W are fabricated from two substrates through two semiconductor processes: two types of bonded dual-chip type. However, either single-chip or dual-chip capacitive miniature The common disadvantage of the microphone = packaged wafers is that when the finished crystal is sawed into a plurality of wafers, it will inevitably damage the structure of the single wafer, causing damage to the micro-element structure in the wafer, thereby leading to the overall process. The yield is reduced. 1279154 In addition, 'Crystal' must be subjected to bulk etching to form a micro-element structure such as a diaphragm (senior (five) and an air gap) necessary for forming a wafer of a micro-micro-microphone; The more parts that need to be etched, or the longer the etching process, the more difficult the process is to control, and the quality of the finished product is greatly varied, so the process yield cannot be improved. Therefore, how to improve the capacitance type The process of micro-microphone wafers to improve the quality of finished wafers, process yield, or other types of processes, or to fundamentally propose new wafer structures, etc., is the goal of the industry and the academic community. Therefore, the main object of the present invention is to provide a method for manufacturing a microphone chip of a capacitive micro-microphone using a plating technique and a transfer technique to improve the process yield and quality of a microphone chip, and a method therefor. Microphone chip produced. Thus, method for manufacturing microphone chip of capacitive miniature microphone of the present invention The method comprises the following steps: (a) sequentially forming a release layer, a first electrode layer, and a diaphragm layer on a substrate. (b) forming a sacrificial layer on the diaphragm layer to cover the sacrificial layer Covering a diaphragm region of the diaphragm layer, and exposing one of the crystal regions to a crystal region of the diaphragm region. (c) Sacrificing in the seed region of the sacrificial layer and the diaphragm layer The layer and the seed crystal region sequentially define a second electrode layer, and a strong 1279154 layer 'and the second electrode layer and the strong layer correspond to the diaphragm region to form a sound hole image' to make the sacrifice The layer corresponds to the area of the sound hole image exposed in a manner corresponding to the sound hole image. (d) etching away the sacrificial layer from the exposed portion of the sacrificial layer corresponding to the sound hole image, so that the first The electrode layer, the diaphragm layer, and the second electrode layer together with the strong layer form a microphone wafer. (e) etching the detachment layer by etching the etchant corresponding to the material forming the layer, and removing the detachment layer The microphone chip is separated from the substrate to obtain the microphone chip. A microphone chip of a capacitive micro-microphone is packaged in a housing to form a capacitive micro-microphone, the microphone chip comprising a diaphragm and a gas chamber unit coupled to the diaphragm. The diaphragm and the housing a package wall is spaced apart from each other, and together with the package wall, defines a vibration space for deformation of the diaphragm, the diaphragm has a first electrode layer formed of a conductive material, and a vibration composed of an insulating material a film layer, the diaphragm layer includes a diaphragm region, and a seed region surrounding the diaphragm region, and the diaphragm region can be correspondingly deformed by external acoustic energy transfer. a second electrode layer composed of a conductor material, and a strong layer formed on the second electrode layer, the second electrode layer and the solid layer together forming a phase opposite to the first electrode layer a direction extending air chamber wall and a back plate having a sound hole image, the back plate, the air chamber wall and the diaphragm region of the diaphragm layer jointly defining a sound hole image communicating with the outside to provide airflow Flowing Room. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. Referring to Fig. 1, a first preferred embodiment of a method of fabricating a microphone chip for a capacitive micro-microphone of the present invention is such that a microphone chip 2 as shown in Fig. 2 can be prepared. Referring first to Figure 2, the microphone chip 2 includes a diaphragm 21 and a chamber unit 22 coupled to the diaphragm 21. The diaphragm 21 is a "flat" diaphragm 21, which has a first electrode layer 211, and a vibrating layer 212 formed on the first electrode layer 211. The diaphragm layer 212 includes a diaphragm region. 213, and a seed region 214 of the surrounding diaphragm region 213, the diaphragm region 213 can be correspondingly deformed by the external acoustic energy. Generally, the first electrode layer 211 is made of a metal such as chromium, gold, button, platinum, aluminum, palladium, tungsten, copper, nickel, or the like, and a combination of these metals is used. Here, chromium/gold is taken as an example. The diaphragm layer 212 may be selected, for example, from polyimide, tantalum nitride, cerium oxide, metal, or a combination thereof, and is exemplified by polyamine. The gas cell unit 22 has a second electrode layer 221, and a solid layer 222 defined on the second electrode layer 221, and the second electrode layer 221 and the solid layer 222 together form a self-crystallizing region 214 to the opposite a gas chamber wall 223 extending in the direction of an electrode layer, and a back plate 1279154 225 having a sound hole image 224, the back plate 225, the gas chamber wall 223 and the diaphragm region 2i3 of the diaphragm layer 212 define a sound hole The image 224 is in communication with the outside of the chamber 226 for airflow. Similarly, the second electrode layer 221 is made of a metal such as a complex, gold, neon, platinum, aluminum, palladium, tungsten, copper, or nickel, or a combination of these metals. Here, chromium/gold is taken as an example. The reinforcing layer 222 can be selected, for example, from nickel, copper, tin, iron, acrylic, polyamidoamine, and the like. It is composed of materials, and nickel is used as an example here. The microphone chip 2 described above can be more clearly understood when it is described in detail in conjunction with the manufacturing method shown in FIG. Referring to FIG. 1, when the microphone chip 2 is manufactured, the step u is first performed, and <(10)>Shi Xijing 1W乍 is used as the substrate 41. After being cleaned by a standard cleaning step, the thickness of the substrate is 41 by electron beam evaporation on the substrate 41. The aluminum acts as the release layer 42. Due to the existence of the detachment layer 42, in order to complete the microphone chip 2 after the completion of the "specific residual liquid solvent, the microphone crystal #2 can be separated from the substrate to directly obtain the complete microphone chip 2, and therefore, detach|I The constituent material 'only needs to correspond to the substrate 41 and the microphone chip 2, and when (4) liquid ^, only money is separated from the layer 42 without damaging the substrate and the microphone: the cymbal 2 can be 'so other oxides, The polymer material, or a combination of these materials, can be applied; here, the corresponding selection of hydrochloric acid as the residual engraving liquid is taken as an example. - Next, proceed to step 12, using a yellow lithography to define a predetermined image on the release layer 42. The thermal resistance vapor deposition machine evaporates chromium/gold (Cr/Au) having a thickness of about Wnm and then removes (Lift_〇ff After the undesired portion, it is defined to form the first electrode layer 211 having a predetermined image. 1279154 Then, in step 13, the diaphragm layer 212 having a predetermined image is defined by a yellow light lithography on the first electrode layer 2 by a photosensitive material such as polyimide to complete the fabrication of the diaphragm 21. Next, in step 14, a cerium oxide having a thickness of about 3 m is deposited on the diaphragm region 213 of the diaphragm layer 212 by a plasma assisted chemical vapor deposition system (PECVD) as a sacrificial layer 43 for subsequent etching and etching. ( sacrificial layer) ° Since the existence of the sacrificial layer 43 is to form a molding state of the subsequent completion of the gas chamber, the selection of the constituent material of the sacrificial layer is the etching liquid when the sacrificial layer is removed by etching. It does not harm other knots of the microphone. Therefore, other materials such as polymer materials and aluminum can be applied in addition to the dioxide used in this example. Then, in step 15, the yellow light lithography is used to form a predetermined sound hole image pattern on the upper surface of the diaphragm 21 after the sacrificial layer 43 is opposite to the connection, and the thermal resistance vapor deposition machine is in the diaphragm layer 212. The seeding region 214 and the sacrificial layer 43 are chrome/gold (Cr/Au) having a steaming bond with a degree of about 150 nm, and then removing (Lift_〇ff) an undesired portion, and defining a predetermined sound hole pattern. A second electrode layer 221 like the 224 aspect. Proceeding to step 16, the second electrode layer 221 is used as a seed layer, and a sufficiently thick nickel (Ni) is plated to form a strong layer 222. At this time, the second electrode layer 221 and the solid layer 222 correspond to the diaphragm region 213. The formed sound hole image 224 is such that the sacrificial layer 43 corresponds to the region of the sound hole image 224, and is exposed in a corresponding manner to the sound hole image 224. Next, proceeding to step 17, using the hydrofluoric acid buffer (B〇E) to smear the sacrificial layer 43 from the exposed portion of the sound hole image 224 of the sacrifice 10 1279154, and completing the gas cell unit 22 on the diaphragm 21. Production. 2 Perform step 18' to remove the release layer 42 with hydrochloric acid (HC1) money, showing: ί: Γ 2, 2 two substrates 41 phase separation ' can be obtained as shown in Figure 2, while the substrate 41 can also Recycling. The maker in3' manufactures the wafer '5 of the microphone chip of the capacitive miniature microphone of the present invention. The preferred embodiment 'is a microphone as shown in FIG. 4, and FIG. 4, and at the same time, referring to FIG. 2, a microphone chip 5 made by the second preferred method of making a microphone, and the above example. The manufacturing method made by the example is very similar in structure, and the difference is only in the diaphragm 21 of the microphone chip 2 of the upper one, and the microphone crystal of the microphone chip is subordinated by the film: =: film: repeating the notes 52, 5 The structure is similar to 'the structure of the wafer 5 is no longer added here. Experience|^ 目3'The above diaphragm 51 $"(4)" diaphragm microphone head: After the detailed description, it can be more clear Understand. After the step 31', the <(10)> sand wafer is used as the substrate 41, and after the L cleaning, the yellow lithography first defines a predetermined wrinkle image 44 on the substrate 41. In order to remove the impurity, the step 32 is carried out, and the electron beam is distilled to a thickness of about 3 #m. The predetermined pattern > ^ step 33 ' defines a < on the release layer 42 by using a yellow lithography, and deposits chromium/gold 1279154 (Cr/Au) having a thickness of about 150 nm by a thermal resistance vapor deposition machine, and then removes ( After the undesired portion of Lift_Off, the first electrode layer 211 having a predetermined image is defined in conjunction with the wrinkle image 44. Then, in step 34, the diaphragm layer 212 having a predetermined image is defined on the first electrode layer 211 by a yellow light lithography using a photosensitive material such as polyimide to complete the fabrication of the corrugated diaphragm 51. Next, in step 35, a cerium dioxide having a thickness of about 3 〆 m is deposited on the diaphragm region 213 of the diaphragm layer 212 by a plasma assisted chemical vapor deposition system (PECVD) as a sacrificial layer for subsequent etching and etching. 43. Then, in step 36, after the predetermined sound hole image 224 is defined by the yellow light lithography on the upper surface of the sacrificial layer 43 opposite to the connecting diaphragm 51, the seed region 214 of the diaphragm layer 212 is formed by the thermal resistance type vapor deposition machine. After depositing chromium/gold (Cr/Au) having a thickness of about 15 〇 nm on the sacrificial layer 43 and removing (Uft_〇ff) an unnecessary portion, defining a pattern having a predetermined sound hole image 224 The second electrode layer 221. Proceeding to step 37, the second electrode layer 221 is used as a seed layer, and a sufficiently thick nickel (Ni) is plated to form a strong layer 222. At this time, the second electrode layer 221 and the solid layer 222 correspond to the diaphragm region. The sound hole image 224 formed by 213 causes the sacrificial layer 43 to correspond to the region of the sound hole image 224, and is exposed in a corresponding manner to the sound hole image 224. Next, in step 38, the fabrication of the gas cell unit 22 is completed on the open-type diaphragm 51 by using bqe from the sacrificial layer 43 corresponding to the exposed portion of the sound hole image 224. Step 39 is performed to remove the release layer 42 by hydrochloric acid (HC1) etching to separate the microphone chip 5 from the substrate 41 to obtain the microphone crystal 12 1279154 sheet 5, and the substrate 41 can be reused. Generally, a wafer containing a large number of circuits is accumulated, and after the wafer is prepared, it must be packaged into an electronic device to be practically applied. Similarly, the microphone chips 2, 5 obtained by the above-described method for manufacturing a microphone chip of the capacitive micro-microphone of the present invention write the first and second electrode layers 211, 221 into a charge capacitor, and the capacitance can be changed. After the field effect transistor (FET, not shown) converted into a voltage change is packaged together into a housing 61 for sound energy penetration, for example, the diaphragm 21 and the housing 61 are formed as shown in FIG. After the bottom walls 62 are spaced apart from each other, the bottom wall 62 defines a capacitive micro-microphone 7 for forming a vibration space 63 required for deformation of the diaphragm 21, or as shown in FIG. 6, with the air chamber unit 22 and the casing. The bottom wall 62 of the seat 61 is spaced apart from each other, and the diaphragm 21 and the peripheral wall of the housing 61 are formed with a diaphragm 21幵> the required vibration space (5) 63 capacitive micro-microphone' can sense external sound energy Change and convert this change into an electronic signal' for practical application. Since the "single plate" diaphragm 21 or the microphone chips 2, 5 of the "wrinkled" diaphragm 51 are different only in the state of the diaphragm 21, the diaphragm 21 is only used as the diaphragm 21 The "flat-plate" tempo-day piece 2 is packaged into a capacitive micro-microphone 7, 7 and will be described. The above-mentioned microphone chips 2, 5 can also be directly applied to the system level virtual-, /, that is, without the shell and directly packaged on the circuit board (B0ard), but, the general wafer is different, the sound energy can be made Off, (5) When the film is selected by the outside world, the vibration space 63 required for the deformation of the diaphragm 21, 51 must be reserved. Due to the small variety of the package application, there are many types of packaging applications. 1279154 More examples. It can be seen from the above description that the manufacturing method of the microphone chip of the capacitive micro-microphone of the present invention mainly uses the techniques of yellow light lithography, vapor deposition and electric keys to define most of the structures of the microphone wafers 2 and 5 by the conductor material body (only The diaphragm layers 212, 212 are non-conductor materials due to structural electrical and frequency response requirements, and are matched with the structure of the sacrificial layer 43, and thus can be accurately controlled (4) hollowed out to form the microphone chips 2, 5, and then, Applying the separation layer 42 to separate the microphone wafers 2, 5 and the substrate 41, thereby obtaining the microphone wafers 2, 5 and re-using the substrate 41, which is not ambiguous - can avoid the body # inscription is less accurate The shortcomings of the control, at the same time, can avoid the damage of the structure of the wafer micro-elements caused by the cutting, and can improve the quality and the process yield of the overall wafer, and indeed achieve the creative purpose of the present invention. The above is only the preferred embodiment of the present invention, and is not limited thereto, and the scope of the present invention is simply equivalent to the equivalent of the present invention and the contents of the specification. And modifications are still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing a first preferred embodiment of a method for manufacturing a microphone chip of a capacitive micro-microphone according to the present invention; FIG. 2 is a cross-sectional view showing the present invention in FIG. A microphone chip made by a method for manufacturing a microphone chip of a capacitive micro-microphone; FIG. 3 is a flow chart showing a second preferred embodiment of a method for manufacturing a microphone chip of the capacitive micro-microphone of the present invention; 14 1279154 FIG. ~ ^ , cross-sectional schematic, # 夕风的麦克芯片制造3 Figure 3 of the present invention capacitive micrograph 5 is a cross-sectional schematic view, into a microphone chip; packaged into a capacitive micro-microphone, and w Figure 2 The illustrated microphone wafer Figure 6 is a cross-sectional view illustrating a capacitive miniature microphone packaged in another aspect as shown in Figure 2. Microphone chip
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【主要元件符號說明】 19 步驟 31 步驟 20 步驟 32 步驟 21 步驟 33 步驟 22 步驟 34 步驟 23 步驟 35 步驟 24 步驟 36 步驟 25 步驟 37 步驟 26 步驟 38 步驟 2 麥克風晶片 39 步驟 21 振膜 41 基板 211 第一電極層 42 脫離層 212 振膜層 43 犧牲層 213 振膜區域 44 敵折圖像 214 種晶區域 5 麥克風晶片 22 氣室單元 51 振膜 221 第二電極層 61 殼座 222 強固層 62 底壁 223 氣室壁 63 振動空間 224 音孔圖像 64 周壁 225 背板 Ί、T 電容式微型麥克風 226 氣室 16[Main component symbol description] 19 Step 31 Step 20 Step 32 Step 21 Step 33 Step 22 Step 34 Step 23 Step 35 Step 24 Step 36 Step 25 Step 37 Step 26 Step 38 Step 2 Microphone wafer 39 Step 21 Diaphragm 41 Substrate 211 An electrode layer 42 detachment layer 212 diaphragm layer 43 sacrificial layer 213 diaphragm region 44 enemy image 214 seed region 5 microphone wafer 22 gas chamber unit 51 diaphragm 221 second electrode layer 61 housing 222 strong layer 62 bottom wall 223 Air chamber wall 63 Vibration space 224 Sound hole image 64 Bay wall 225 Back plate Ί, T Capacitive miniature microphone 226 Gas chamber 16