CN101267689A - Capacitor micro microphone chip - Google Patents
Capacitor micro microphone chip Download PDFInfo
- Publication number
- CN101267689A CN101267689A CNA2007100873474A CN200710087347A CN101267689A CN 101267689 A CN101267689 A CN 101267689A CN A2007100873474 A CNA2007100873474 A CN A2007100873474A CN 200710087347 A CN200710087347 A CN 200710087347A CN 101267689 A CN101267689 A CN 101267689A
- Authority
- CN
- China
- Prior art keywords
- layer
- microphone
- vibrating diaphragm
- microphone chip
- capacitance type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a microphone chip of a capacitor micro-microphone, the capacitor micro-microphone is obtained by orderly defining and forming a disengaging layer, a first electrode layer, a diaphragm layer and a sacrifice layer on a substrate by a semiconductor manufacturing process and a micro-electromechanics technology, then continuing defining a second electrode layer and a strengthening layer, etching and caverning the sacrifice layer through using sound hole images formed correspondingly to the second electrode layer and the strengthening layer to form air gaps, forming the capacitor micro-microphone connected with a substrate, and finally etching and removing the disengaging layer by a disengaging technology so that the capacitor micro-microphone is disengaged from the substrate. Because the method adopts the semiconductor manufacturing process and the micro-electromechanics technology, the capacitor micro-microphone is manufactured without a cutting process, the volume of the capacitor micro-microphone can be accurately reduced, the good rate of the manufacturing process is increased, and the substrate can be reclaimed and reused so as to reduce material cost.
Description
Technical field
The present invention relates to a kind of chip, particularly relate to a kind of microphone chip that is used to be packaged into mini microphone.
Background technology
General mini microphone can be divided into piezoelectric type, pressure resistance type and condenser type three classes, and wherein, because the capacitance type minitype microphone because of having higher sensitivity, lower noise, low distortion, with lower advantages such as power consumption, and becomes the main flow that present mini microphone develops.
And, be packaged into the microphone chip of capacitance type minitype microphone, can simply be distinguished into by single substrate through most roads manufacture of semiconductor process, for example little shadow, etching, steaming (spattering) plating .., the single-chip formula of cutting (sawing) again, and by two rejoin two kinds of (bonding) all-in-one-piece twin-core chips of the chip of moulding respectively.
It no matter is single-chip formula or the twin-core sheet capacitor packaged microphone chip in the type microphone that declines, its common shortcoming all is must carry out in the processing procedure body etching (bulk etching), with essential " vibrating diaphragm (diaphragm) " and the structures such as " air gap (air gap) " that forms the capacitance type minitype microphone; And need carry out the body etching process time, etched part is many more, and required to carry out etched time-histories also just long more, and processing procedure is just difficult more control also, and prepared quality of finished variation also can be bigger, and therefore process rate also can't promote; In addition, when carrying out the wafer cutting, all can undermine the structure of in type microphone chip, and cause the reduction of overall process yield.
Therefore, improving the microphone chip that is packaged into the capacitance type minitype microphone at present, is the target of industry, educational circles effort always.
Summary of the invention
The objective of the invention is is providing a kind of manufacture of semiconductor, micro-electromechanical technology and disengaging technology (TransferTechnique) utilized to make new microphone chip.
So the microphone chip of a kind of capacitance type minitype microphone of the present invention is packaged in the shell block and matches with a field-effect transistor that capacitance variations can be converted to change in voltage and forms a capacitance type minitype microphone.
This microphone chip is with the manufacture of semiconductor moulding and comprises a vibrating diaphragm and an air gap unit.
The internal face of this vibrating diaphragm and this shell block forms an oscillation space that supplies this vibrating diaphragm deformation to use separately, and this vibrating diaphragm has first electrode layer with the conductor material formation, and one constitute and be formed on vibrating diaphragm layer on this first electrode layer with insulating material, this vibrating diaphragm layer also comprises a vibrating diaphragm zone, reach the territory, kind crystalline region that a ring encloses this vibrating diaphragm zone, this vibrating diaphragm zone can produce corresponding deformation because of the Burning in Effect of Sound Energy in the external world.
This air gap unit has a second electrode lay with the conductor material formation, reach one and define the strong layer that is formed on this second electrode lay, this the second electrode lay with should be strong layer and common form one from territory, this kind crystalline region to air gap wall in contrast to this first electrode layer direction extension, and the backboard with a sound hole image, the vibrating diaphragm zone of this backboard, air gap wall and this vibrating diaphragm layer defines one jointly with the mobile air gap of this sound hole image air feed stream.
Beneficial effect of the present invention is with manufacture of semiconductor, micro-electromechanical technology and disengaging technology, need not cut the ground straight forming and go out the microphone chip that can directly be packaged in the shell block, and can accurately dwindle the volume of microphone chip, and the yield of raising overall process, simultaneously also can be with the substrate recycling, to reduce consumables cost.
Description of drawings
Fig. 1 is a cross-sectional schematic, and an electric capacity that forms with one first preferred embodiment of the microphone chip of the capacitance type minitype microphone of the present invention encapsulation shape microphone that declines is described;
Fig. 2 is a cross-sectional schematic, and one first preferred embodiment of the microphone chip of capacitance type minitype microphone of the present invention is described;
Fig. 3 is a flow chart, the manufacture method of the microphone chip of key diagram 2;
Fig. 4 is a cross-sectional schematic, illustrates to be packaged into the capacitance type minitype microphone of another aspect after 180 ° of the microphone chip shown in Figure 2 upsets;
Fig. 5 is a cross-sectional schematic, and one second preferred embodiment of the microphone chip of capacitance type minitype microphone of the present invention is described;
Fig. 6 is a flow chart, the manufacture method of the microphone chip of key diagram 5.
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples:
Consult Fig. 1, Fig. 2, one first preferred embodiment of the microphone chip of capacitance type minitype microphone of the present invention is to cooperate a shell block 11 to be packaged into as shown in Figure 1 capacitance type minitype microphone 1, changes in order to respond to extraneous acoustic energy.
This shell block 1 comprises that a diapire 111, is by the upwardly extending perisporium of these diapire 111 peripheries 112, one and these perisporium 112 apical margins link and the roof 113 that can penetrate for acoustic energy, an and package blocks 114 that is arranged on this diapire 111, this diapire 111, perisporium 112 define the ccontaining encapsulated space 115 of this microphone chip of a confession 2 jointly with roof 113.
This microphone chip 2 be use manufacture of semiconductor, micro-electromechanical technology is made with the disengaging technology, comprises a vibrating diaphragm 21, and one and the air gap unit 22 that is connected of vibrating diaphragm 21.
This vibrating diaphragm 21 is industry alleged " planar diaphragm ", be connected on this package blocks 114 and separate out an oscillation space 116 jointly with the diapire 111 of this shell block 11, this vibrating diaphragm 21 also has first electrode layer 211 that constitutes and be connected with this package blocks 114 with conductor material, and one be formed at vibrating diaphragm layer 212 on first electrode layer 211 with insulating material, this vibrating diaphragm layer 212 also comprises a vibrating diaphragm zone 213, reach the territory, kind crystalline region 214 that a ring encloses vibrating diaphragm zone 213, this vibrating diaphragm zone 213 can produce corresponding deformation because of the Burning in Effect of Sound Energy in the external world.This first electrode layer 211 is with for example metals such as chromium, gold, tantalum, platinum, aluminium, palladium, tungsten, copper, nickel, or and the alloy/compound of the combination of these metals be that material constitutes, be the example explanation at this with chromium/gold; And this vibrating diaphragm layer 212 can be selected for example pi (polyimide), silicon nitride, silica, metal, and the material that is combined as that reaches these constitutes, and then is the example explanation with the pi at this.
This air gap unit 22 has a second electrode lay 221, reach one and define the strong layer 222 that is formed on the second electrode lay 221, this the second electrode lay 221 is with strong layer 222 and form one jointly from planting territory, crystalline region 214 to the air gap wall 223 that extends in contrast to first electrode layer, 211 directions, and the backboard 225 with a sound hole image 224, the vibrating diaphragm zone 213 of this backboard 225, air gap wall 223 and vibrating diaphragm layer 212 defines an air gap 226 that flows with sound hole image 224 air feed stream jointly.Similarly, this second electrode lay 221 is with for example metals such as chromium, gold, tantalum, platinum, aluminium, palladium, tungsten, copper, nickel, or and the material that is combined as of these metals constitute, be the example explanation at this with chromium/gold; This strong layer 222 then can be selected for example nickel, copper, cobalt, iron, acryl, pi, and the material that is combined as that reaches these constitutes, and then is the example explanation with nickel at this.
When at first of above-mentioned microphone chip 2, two electrode layers 211,221 write electric charge and constitute electric capacity, and after being encapsulated into this shell block 11, capacitance type minitype microphone 1, when extraneous acoustic energy when the roof 113 of this shell block 11 penetrates into, the vibrating diaphragm zone 213 of this vibrating diaphragm 21 is subjected to its effect and produces corresponding deformation in oscillation space 116 and air gap 226, and in deformation, produce capacitance variations, afterwards, cooperating a field-effect transistor (FET schemes not shown) that capacitance variations can be converted to change in voltage to convert this capacitance variations to electric signal more outwards transmits, utilization.
What this will specify be, above-mentioned is to cooperate the most basic shell block 11 structures to explain with microphone chip 2 of the present invention, in fact, knowing this skill personage all knows, the package blocks 114 of shell block 11, perisporium 112, roof 115, diapire 111 grades can cooperate conduction whether design, or directly therein with circuit design, or replace with circuit board (PCB), and reach the demand of practical application, in addition, field-effect transistor also directly mutual encapsulation go in the shell block 11, or organize to be located at and be used as perisporium 112 with circuit board, on the circuit design that roof 115 or diapire 111 use, because the design of this part is numerous, and is not creation emphasis of the present invention place, so give unnecessary details this no longer doing more.
Above-mentioned microphone chip 2 is after the manufacture method detailed description that cooperates as shown in Figure 3, when can more clearly understanding.
When consulting Fig. 3 and making microphone chip 2, be first implementation step 301, with＜100〉Silicon Wafer is as substrate 41, after cleaning through the standard clean operation, on substrate 41 with the aluminium of the about 3 μ m of electron beam evaporation plating thickness as abscission layer 42.
Because the existence of this abscission layer 42, be to mold after the microphone chip 2 that links with substrate for follow-up, can microphone chip 2 and substrate 41 can be separated with specific etching solution corrosion, directly to obtain the usefulness of complete microphone chip 2, therefore, the constituent material of abscission layer 42, only need counterpart substrate 41 and microphone chip 2, and when with the etching solution corrosion, only can corrosion abscission layer 42 and can not undermine substrate 41 and get final product with microphone chip 2, therefore, except aluminium, other is as oxide, macromolecular material, or the combination of these materials all can be used; At this, be that etching solution is the example explanation then with aluminium and the corresponding follow-up hydrochloric acid of selecting for use.
Then carry out step 302, utilize yellow light lithography after defining predetermined image on the abscission layer 42, be about chromium/gold (Cr/Au) of 150nm with TR evaporator evaporation thickness, remove (Lift-Off) non-required part again after, definition forms first electrode layer 211 with predetermined image.
Carry out step 303 then, utilize once more yellow light lithography on first electrode layer 211 with photosensitive material, define vibrating diaphragm layer 212 as pi (polyimide) with predetermined image, finish the making of vibrating diaphragm 21.
Then carry out step 304, be about the silicon dioxide of 3 μ m, carry out the sacrifice layer 43 (sacrificial layer) that etching is emptied as follow-up with plasma enhanced chemical vapor deposition system (PECVD) deposit thickness on the vibrating diaphragm zone 213 of vibrating diaphragm layer 212.
Because the existence of this sacrifice layer 43, be in order to form the follow-up moulding aspect of finishing air gap unit 22, therefore, the principle of selecting for use of the constituent material of sacrifice layer 43 is when etching removes sacrifice layer 43, etching solution can not injure other structure of microphone and get final product, therefore, except the selected silicon dioxide of corresponding this example, other all can be used as macromolecular material, aluminium etc.
Then carry out step 305 again, utilize yellow light lithography after sacrifice layer 43 defines predetermined sound hole image 224 aspects in contrast to the upper surface that links vibrating diaphragm 21, chromium/the gold (Cr/Au) that is about 150nm with TR evaporator evaporation thickness on the territory, kind crystalline region 214 of vibrating diaphragm layer 212 and sacrifice layer 43, remove (Lift-Off) non-required part again, definition forms the second electrode lay 221 with predetermined sound hole image 224 aspects.
Then carry out step 307, utilize buffered hydrofluoric acid solution (BOE) to empty sacrifice layer 43 as the downward etching in 224 exposed section, and on vibrating diaphragm 21, finish the making of air gap unit 22 from sacrifice layer 43 diaphone hole patterns.
Carry out step 308 at last, (HCl) etches away abscission layer 42 with hydrochloric acid, and makes microphone chip 2 and substrate 41 be separated, and can make microphone chip 2 as shown in Figure 2, and simultaneously, substrate 41 also can be recycled.
Consult Fig. 4, in addition, the above-mentioned microphone chip of finishing 1 also can overturn 180 ° and be stacked on the package blocks 114 with air gap unit 22, and encapsulation makes the electric capacity of the another kind of aspect shape microphone 1 ' that declines.
Consult Fig. 5, one second preferred embodiment of the microphone chip of capacitance type minitype microphone of the present invention, similar to the microphone chip 2 of last example, the vibrating diaphragm 51 of its this routine microphone chip 5 that do not exist together is to belong to " fold formula vibrating diaphragm "; Because other structure of microphone chip is all similar, no longer adds to repeat to give unnecessary details at this.
Consult Fig. 6, above-mentioned vibrating diaphragm 51 belong to " making of the microphone chip of fold formula vibrating diaphragm " " is first implementation step 601, with＜100〉Silicon Wafer is as substrate 41; after cleaning through the standard clean operation, utilize yellow light lithography on substrate 41, to define predetermined fold image 44 earlier.
Then carry out step 602, with the aluminium of the about 3 μ m of electron beam evaporation plating thickness as abscission layer 42.
Then carry out step 603, utilize yellow light lithography after defining predetermined image on the abscission layer 42, chromium/the gold (Cr/Au) that is about 150nm with TR evaporator evaporation thickness, after removing (Lift-Off) non-required part again, cooperate fold image 44 and definition forms first electrode layer 211 with predetermined image.
Carry out step 604 then, utilize once more yellow light lithography on first electrode layer 211 with photosensitive material, define vibrating diaphragm layer 212 as pi (polyimide) with predetermined image, finish the making of fold formula vibrating diaphragm 51.
Then carry out step 605, be about the silicon dioxide of 3 μ m, carry out the sacrifice layer 43 that etching is emptied as follow-up with plasma enhanced chemical vapor deposition system (PECVD) deposit thickness on the vibrating diaphragm zone 213 of vibrating diaphragm layer 212.
Then carry out step 606 again, utilize yellow light lithography after sacrifice layer 43 defines predetermined sound hole image 224 in contrast to the upper surface that links vibrating diaphragm 51, chromium/the gold (Cr/Au) that is about 150nm with TR evaporator evaporation thickness on the territory, kind crystalline region 214 of vibrating diaphragm layer 212 and sacrifice layer 43, after removing (Lift-Off) non-required part again, definition forms the second electrode lay 221 with predetermined sound hole image 224 aspects.
Proceed step 607, with the second electrode lay 221 as planting crystal layer (seed layer), electroplate enough thick nickel (Ni) and form strong layer 222, at this moment, the zone that the corresponding vibrating diaphragms with strong layer 222 of the second electrode lay 221 zone 213 formed sound hole image 224 aspects make sacrifice layer 43 corresponding these sound hole image 224 aspects exposes as 224 aspect with the diaphone hole pattern.
Then carry out step 608, utilize BOE to empty sacrifice layer 43 as the downward etching in the exposed section of 224 aspects, and on fold formula vibrating diaphragm 51, finish the making of air gap unit 22 from sacrifice layer 43 diaphone hole patterns.
Carry out step 609 at last, remove abscission layer 42 with hydrochloric acid (HCl) etching, and make microphone chip 5 and substrate 41 be separated, to obtain microphone chip 5, simultaneously, substrate 41 also can be recycled.
What this will illustrate in addition be, though microphone chip 2,5 of the present invention all is to explain to be encapsulated in the shell block 11, but in fact, these microphone chips 2,5 also can directly apply to system in package-that is need not shell block and directly be packaged on the circuit board (Board), effect with induction acoustic energy, because the form kind of package application is numerous, no longer add to illustrate at this.
As shown in the above description, the microphone chip 2 of capacitance type minitype microphone of the present invention, 5, mainly be to utilize manufacture of semiconductor, micro-electromechanical technology such as evaporation and plating, on substrate 41, define sacrifice layer 43 and microphone chip 2 in regular turn, 5 structure, and then application disengaging technology etches away abscission layer 42 to separate microphone chip 2,5 with substrate 41, thereby obtain microphone chip 2,5 also can be with substrate 41 row recycling again, not only can avoid the body etching to make and be difficult for the accurately shortcoming of control, simultaneously can avoid causing the damage of chip micromodule structure again because of cutting, and can improve the quality and the process rate of whole microphone chip really, reach creation purpose of the present invention really.
Claims (11)
1. the microphone chip of a capacitance type minitype microphone, be packaged in and form a capacitance type minitype microphone in the shell block, and can match with a field-effect transistor that capacitance variations can be converted to change in voltage will the effect acoustic energy convert electric signal to, it is characterized in that:
This microphone chip is with the manufacture of semiconductor moulding and comprises:
One vibrating diaphragm, separate out an oscillation space separately with this shell block internal face, has first electrode layer with the conductor material formation, and one constitute and be formed on vibrating diaphragm layer on this first electrode layer with insulating material, this vibrating diaphragm layer also comprises a vibrating diaphragm zone, reach the territory, kind crystalline region that a ring encloses this vibrating diaphragm zone, this vibrating diaphragm zone can produce corresponding deformation because of the Burning in Effect of Sound Energy in the external world, and
One air gap unit, has a second electrode lay with the conductor material formation, reach one and define the strong layer that is formed on this second electrode lay, this the second electrode lay with should be strong layer and common form one from territory, this kind crystalline region to air gap wall in contrast to this first electrode layer direction extension, and the backboard with a sound hole image, the vibrating diaphragm zone of this backboard, air gap wall and this vibrating diaphragm layer defines one jointly with the mobile air gap of this sound hole image air feed stream.
2. the microphone chip of capacitance type minitype microphone as claimed in claim 1, it is characterized in that: this microphone chip is to define in regular turn earlier to form an abscission layer and this first electrode layer and vibrating diaphragm layer on a substrate, forming one again on this vibrating diaphragm layer covers the vibrating diaphragm zone of this vibrating diaphragm layer and makes the exposed sacrifice layer in kind of territory, crystalline region, then on the territory, kind crystalline region of this sacrifice layer and this vibrating diaphragm layer to should sacrifice layer defining in regular turn the second electrode lay that should this sound hole image of vibrating diaphragm zone formation and strong layer with the aspect in territory, this kind crystalline region, at last the exposed section etching in zone that should the sound hole image is removed this sacrifice layer, and etching removes this abscission layer and this vibrating diaphragm and substrate are separated afterwards and make from this sacrifice layer.
3. the microphone chip of capacitance type minitype microphone as claimed in claim 2, it is characterized in that: this first and second electrode layer is respectively that to be selected from the following group that constitutes be that material definition forms: chromium, gold, tantalum, platinum, aluminium, palladium, tungsten, copper, nickel, and these combination.
4. the microphone chip of capacitance type minitype microphone as claimed in claim 2 is characterized in that: this vibrating diaphragm layer is that to be selected from the following group that constitutes be that material definition forms: pi, silicon nitride, silica, metal, and these combination.
5. the microphone chip of capacitance type minitype microphone as claimed in claim 2, it is characterized in that: this strong layer is to be formed on this second electrode lay with plating mode, and being selected from by the following group that constitutes is that the material definition forms: nickel, copper, cobalt, iron, and these combination.
6. the microphone chip of capacitance type minitype microphone as claimed in claim 2 is characterized in that: this strong layer is that to be selected from by the following group that constitutes be that the material definition forms: acryl, pi reach these combination.
7. the microphone chip of capacitance type minitype microphone as claimed in claim 2 is characterized in that: this abscission layer is that to be selected from by the following group that constitutes be that material definition forms: aluminium, oxide, macromolecular material reach these combination.
8. the microphone chip of capacitance type minitype microphone as claimed in claim 2 is characterized in that: the cross section in the vibrating diaphragm zone of this vibrating diaphragm layer becomes dull and stereotyped aspect.
9. the microphone chip of capacitance type minitype microphone as claimed in claim 2 is characterized in that: the cross section in the vibrating diaphragm zone of this vibrating diaphragm layer becomes concavo-convex fold aspect.
10. the microphone chip of capacitance type minitype microphone as claimed in claim 2 is characterized in that: this sacrifice layer is that to be selected from by the following group that constitutes be that material definition forms: silicon dioxide, aluminium, macromolecular material reach these combination.
11. the microphone chip as claim 2 or 10 described capacitance type minitype microphones is characterized in that: this sacrifice layer is to make with plasma enhanced chemical vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100873474A CN101267689A (en) | 2007-03-14 | 2007-03-14 | Capacitor micro microphone chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100873474A CN101267689A (en) | 2007-03-14 | 2007-03-14 | Capacitor micro microphone chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101267689A true CN101267689A (en) | 2008-09-17 |
Family
ID=39989736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100873474A Pending CN101267689A (en) | 2007-03-14 | 2007-03-14 | Capacitor micro microphone chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101267689A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102056062A (en) * | 2009-10-29 | 2011-05-11 | 苏州敏芯微电子技术有限公司 | Capacitor-type micro silicon microphone and manufacturing method thereof |
| CN102158775A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro Electro Mechanical System) microphone packaging structure and forming method thereof |
| CN102295265A (en) * | 2010-06-25 | 2011-12-28 | 国际商业机器公司 | Planar cavity mems and related structures, methods of manufacture and design structures |
| CN102674237A (en) * | 2011-02-22 | 2012-09-19 | 英飞凌科技股份有限公司 | Monolithic integrated sensor device and method thereof and method for formign the cavity structure of the monolithic integrated sensor device |
| CN101665230B (en) * | 2008-09-03 | 2013-08-21 | 鑫创科技股份有限公司 | Micro-electro-mechanical systems (mems) package and method for forming the mems package |
| CN103561375A (en) * | 2013-09-27 | 2014-02-05 | 宁波鑫丰泰电器有限公司 | MEMS microphone |
| CN103763668A (en) * | 2013-10-18 | 2014-04-30 | 张小友 | MEMS microphone |
| CN104045053A (en) * | 2013-03-11 | 2014-09-17 | 台湾积体电路制造股份有限公司 | Mems device structure with a capping structure |
| US9136136B2 (en) | 2013-09-19 | 2015-09-15 | Infineon Technologies Dresden Gmbh | Method and structure for creating cavities with extreme aspect ratios |
| US9139427B2 (en) | 2012-04-17 | 2015-09-22 | Infineon Technologies Ag | Methods for producing a cavity within a semiconductor substrate |
| WO2016008106A1 (en) * | 2014-07-15 | 2016-01-21 | Goertek Inc. | A silicon microphone with high-aspect-ratio corrugated diaphragm and a package with the same |
| CN105722002A (en) * | 2014-09-23 | 2016-06-29 | 现代自动车株式会社 | Microphone and method of manufacturing the same |
| CN106231519A (en) * | 2011-03-04 | 2016-12-14 | 埃普科斯股份有限公司 | The method of the barrier film between two backboards of mike and location |
| CN112822616A (en) * | 2021-01-19 | 2021-05-18 | 潍坊歌尔微电子有限公司 | Sensing chip and MEMS sensor |
-
2007
- 2007-03-14 CN CNA2007100873474A patent/CN101267689A/en active Pending
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101665230B (en) * | 2008-09-03 | 2013-08-21 | 鑫创科技股份有限公司 | Micro-electro-mechanical systems (mems) package and method for forming the mems package |
| CN102056062A (en) * | 2009-10-29 | 2011-05-11 | 苏州敏芯微电子技术有限公司 | Capacitor-type micro silicon microphone and manufacturing method thereof |
| CN102906010B (en) * | 2010-06-25 | 2015-12-02 | 国际商业机器公司 | The method of plane cavity MEMS and dependency structure, manufacture and project organization |
| CN102295265A (en) * | 2010-06-25 | 2011-12-28 | 国际商业机器公司 | Planar cavity mems and related structures, methods of manufacture and design structures |
| CN102295265B (en) * | 2010-06-25 | 2014-12-17 | 国际商业机器公司 | Planar cavity mems and related structures, methods of manufacture and design structures |
| CN102906010A (en) * | 2010-06-25 | 2013-01-30 | 国际商业机器公司 | Planar cavity mems and related structures, methods of manufacture and design structures |
| CN102674237A (en) * | 2011-02-22 | 2012-09-19 | 英飞凌科技股份有限公司 | Monolithic integrated sensor device and method thereof and method for formign the cavity structure of the monolithic integrated sensor device |
| US9598277B2 (en) | 2011-02-22 | 2017-03-21 | Infineon Technologies Ag | Cavity structures for MEMS devices |
| CN102674237B (en) * | 2011-02-22 | 2015-12-02 | 英飞凌科技股份有限公司 | The method of monolithic integrated sensor device and formation method and its cavity body structure of formation |
| US9145292B2 (en) | 2011-02-22 | 2015-09-29 | Infineon Technologies Ag | Cavity structures for MEMS devices |
| CN106231519B (en) * | 2011-03-04 | 2019-09-03 | Tdk株式会社 | Microphone |
| CN106231519A (en) * | 2011-03-04 | 2016-12-14 | 埃普科斯股份有限公司 | The method of the barrier film between two backboards of mike and location |
| CN102158775B (en) * | 2011-03-15 | 2015-01-28 | 迈尔森电子（天津）有限公司 | MEMS (Micro Electro Mechanical System) microphone packaging structure and forming method thereof |
| CN102158775A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro Electro Mechanical System) microphone packaging structure and forming method thereof |
| US9139427B2 (en) | 2012-04-17 | 2015-09-22 | Infineon Technologies Ag | Methods for producing a cavity within a semiconductor substrate |
| CN104045053A (en) * | 2013-03-11 | 2014-09-17 | 台湾积体电路制造股份有限公司 | Mems device structure with a capping structure |
| US9136136B2 (en) | 2013-09-19 | 2015-09-15 | Infineon Technologies Dresden Gmbh | Method and structure for creating cavities with extreme aspect ratios |
| US9663355B2 (en) | 2013-09-19 | 2017-05-30 | Infineon Technologies Dresden Gmbh | Method and structure for creating cavities with extreme aspect ratios |
| CN103561375B (en) * | 2013-09-27 | 2017-01-04 | 宁波鑫丰泰电器有限公司 | A kind of MEMS microphone |
| CN103561375A (en) * | 2013-09-27 | 2014-02-05 | 宁波鑫丰泰电器有限公司 | MEMS microphone |
| CN105933837A (en) * | 2013-10-18 | 2016-09-07 | 张小友 | MEMS microphone vibrating diaphragm |
| CN103763668B (en) * | 2013-10-18 | 2016-08-17 | 张小友 | A kind of MEMS microphone |
| CN103763668A (en) * | 2013-10-18 | 2014-04-30 | 张小友 | MEMS microphone |
| CN105933837B (en) * | 2013-10-18 | 2019-02-15 | 张小友 | A kind of MEMS microphone vibrating diaphragm |
| WO2016008106A1 (en) * | 2014-07-15 | 2016-01-21 | Goertek Inc. | A silicon microphone with high-aspect-ratio corrugated diaphragm and a package with the same |
| US9930453B2 (en) | 2014-07-15 | 2018-03-27 | Goertek Inc. | Silicon microphone with high-aspect-ratio corrugated diaphragm and a package with the same |
| CN105722002A (en) * | 2014-09-23 | 2016-06-29 | 现代自动车株式会社 | Microphone and method of manufacturing the same |
| CN105722002B (en) * | 2014-09-23 | 2020-02-04 | 现代自动车株式会社 | Microphone and method of manufacturing the same |
| CN112822616A (en) * | 2021-01-19 | 2021-05-18 | 潍坊歌尔微电子有限公司 | Sensing chip and MEMS sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101267689A (en) | Capacitor micro microphone chip | |
| KR101965089B1 (en) | Integrated structure of mems microphone and pressure sensor, and manufacturing method thereof | |
| US8509462B2 (en) | Piezoelectric micro speaker including annular ring-shaped vibrating membranes and method of manufacturing the piezoelectric micro speaker | |
| CN103281659B (en) | MEMS microphone and preparation method thereof | |
| US9656854B2 (en) | MEMS microphone with dual-back plate and method of manufacturing the same | |
| US20090208037A1 (en) | Silicon microphone without dedicated backplate | |
| JP2005244966A5 (en) | ||
| CN101854578B (en) | Miniature microphone manufacturing method based on Si-Si bonding process | |
| JP2010263444A (en) | Capacitive electro-mechanical transducer and method of fabricating the same | |
| CN102238463B (en) | Method and chip for integrating silicon microphone device with IC (integrated circuit) single chip | |
| CN203279172U (en) | MEMS (Micro-Electro-Mechanical System) microphone | |
| US7469461B2 (en) | Method for making a diaphragm unit of a condenser microphone | |
| CN109485009A (en) | Microphone and its manufacturing method | |
| WO2019227805A1 (en) | Mems microphone and air pressure sensor integrated structure and fabrication method therefor | |
| CN1787694A (en) | Mfg. method for silicon crystal microphone | |
| JP3829115B2 (en) | Condenser microphone and manufacturing method thereof | |
| CN108966098A (en) | microphone and its manufacturing method | |
| CN101472212A (en) | Post-CMOS capacitance silicon-based micro-microphone and preparation method thereof | |
| CN103347241B (en) | capacitor type silicon microphone chip and preparation method thereof | |
| CN103175552B (en) | Capacitive sensor, method for manufacturing the same, and multi-functional element having the same | |
| CN101060726B (en) | A method for manufacturing the ringing membrane of capacitance microphone element | |
| CN102413408A (en) | Micro electromechanical microphone chip capable of increasing back cavity space and manufacturing technology thereof | |
| US7239712B1 (en) | Inductor-based MEMS microphone | |
| CN102223591B (en) | Wafer level packaging structure of micro electro mechanical system microphone and manufacturing method thereof | |
| CN1505438A (en) | Capacitor type microphone and micro-electromechanical processing and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080917 |