TW201118961A - Linear deposition source - Google Patents

Linear deposition source Download PDF

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Publication number
TW201118961A
TW201118961A TW099119643A TW99119643A TW201118961A TW 201118961 A TW201118961 A TW 201118961A TW 099119643 A TW099119643 A TW 099119643A TW 99119643 A TW99119643 A TW 99119643A TW 201118961 A TW201118961 A TW 201118961A
Authority
TW
Taiwan
Prior art keywords
deposition source
nozzles
deposition
heat
layers
Prior art date
Application number
TW099119643A
Other languages
Chinese (zh)
Inventor
Chad Conroy
Scott Wayne Priddy
Jacob A Dahlstrom
Rich Bresnahan
David William Gotthold
John Patrin
Original Assignee
Veeco Instr Inc
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Priority claimed from US12/628,189 external-priority patent/US20100159132A1/en
Application filed by Veeco Instr Inc filed Critical Veeco Instr Inc
Publication of TW201118961A publication Critical patent/TW201118961A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16LPIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L59/00Thermal insulation in general
    • F16L59/02Shape or form of insulating materials, with or without coverings integral with the insulating materials
    • F16L59/029Shape or form of insulating materials, with or without coverings integral with the insulating materials layered

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A deposition source includes a crucible for containing deposition material and a body comprising a conductance channel. An input of the conductance channel is coupled to an output of the crucible. A heater heats the crucible so that the crucible evaporates the deposition material into the conductance channel. A heat shield comprising a plurality of heat resistant material layers is positioned around at least one of the heater and the body. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux.

Description

201118961 六、發明說明: 【發明所屬之技術領域】 本教示大致上有關用以生 源材料蒸氣的通量之設備及方 係僅只用於組織之目的,且不 本申請案中所敘述之主題。 【先前技術】 產一沉積在基板上用之沉積 法。在本文中所使用之分段 應被解釋為以任何方式限制 此申請案係2009年11月30日提出之美國專利申請案 序號第12/628,189號的部份接續申請案,並以線性沉積源 為其標題,且對2009年2月27日提出之標題為“用於共 沉積銅 '銦、及鎵之沉積源 '系統、及相關方法,,的美國 臨時專利申請案序號第61/156,348號、及2008年12月18 曰提出之標題為“用於共沉積銅、銦、及鎵之沉積源、系 統、及相關方法”的美國臨時申請案序號第61/138,932號 兩者主張優先權。美國專利申請案序號第12/628,189號、 美國臨時專利申請案序號第61/156,348號、及美國臨時申 請案序號第61/138,932號之整個說明書係以引用的方式併 入本文中。 大面積基板沉積系統很多年來已被用於處理極多型式 之基板材料的彈性網模基板及堅硬的面板基板。很多習知 系統被設計成可處理塑膠網模基板及堅硬的面板玻璃基 板。該等網模基板或堅硬的面板係在線性沉積源上方直接 通過。適合用於蒸發網模基板或堅硬的面板基板上之材料 的習知線性沉積源包括一船形坩堝,其典型係由用於裝盛 201118961 沉積源材料之耐火材料所形成 官之内部。該蒸氣出口管同時 佈該等蒸氣之空間。一或多個 被線性地配置。 。該堆瑪被放置於蒸氣出口 用作—蒸發空間及用作一分 蒸氣出口開孔係沿著該來源 【發明内容] 你丨,,立共Μ Μ 4 ^ 驭 具體實施 4 J 思4日關於該具1眘/fei丨ήί·々A· «j-· 卉體貫施例所敘述之特別的特色、结構、 或特徵被包括於該教示之至少— 、 一體貫鈿例中。於該說明 曰中之各種位置中的‘‘於一且髅 、-、體實施例中片語之表述不 須全部參考該相同之具體實施例。 應了解本教示之方法的個別步驟能以任何順序及/或 只要該教不同時維持可操作而被施行。再者,貞了解本教 不之設備及方法可包括任何數目或所有該等敘述之具體實 施例,只要該教示可維持操作。 …t教示見在將參考其示範具體實施例被更詳細地救 述,如所附圖中所示。雖然本教示係會同各種具體實施例 及實例敘述’其係不意欲將本教示限制於此等具體實施 ^反而,本教示涵括各種另外選擇、修改及同等物,如 所屬技術領域中具有通常知識者所了解的。那些對在此中 之教示具有使用權的所屬技術領域中具有通常知識者將認 知在本揭示内容之範圍内的額外之措失、修改、與具體實 施例、以及其他使用領域,如在本文中所敘述者。 本教示大致上有關用以生產一沉積在基板上用之沉積 源材料蒸氣的通量之設備及方法。本教示之一些態樣有關 201118961 適:用以生產一沉積在網模基板、堅硬的面板基板、或另 聖式的長形工件上用之沉積源材料蒸氣的通量之線性沉 積源。本教示之其他態樣有關適合用以生產一沉積在基板 夾具上用之沉積源材料蒸氣之通量的線性沉積源,該基板 夾具支撐複數傳統基板、諸如半導體基板。 ^於本教不之很多具體實施例中,該等方法及設備有關 藉由蒸發來沉積。如在此中所使用之“蒸發,,—詞意指將 6玄來源材料轉換成蒸氣,且包括該技藝中正常使用之數個 術5吾,諸如汽化、蒸發、及昇華。被轉換成蒸氣之沉積源 材料可為呈任何物質狀態。於报多具體實施例中,本教示 之設備及方法被被用於同時蒸發二或更多不同材料至一基 板、諸如一網模基板或一堅硬的面板基板上。於一些具體 實她例中,本教示之設備及方法被用於蒸發單一材料至一 基板、諸如一網模基板或一堅硬的面板基板上。於多數或 分區式坩堝中之使用單一沉積材料將增加重複性及將增加 該通量比率。 本教示的一應用有關用以將銅、銦、及鎵同時沉積至 一網模基板或一堅硬的面板基板上之方法及設備。使鎵替 代所有或部份銦之銅銦二栖化物之化合物(c I g化合物)係已 知為銅銦鎵二硒化物之化合物(CIGS化合物)。CIGS化合物 一般被使用於製造光伏打電池。特別地是,CIGS化合物一 般被用作薄膜太陽能電池中之吸收層。這些CIGS化合物具 有一直接之譜帶間隙,該譜帶間隙允許該電磁頻譜的可見 區域中之太陽輻射的強力吸收。CIGS光伏打電池已被示 6 ⑤ 201118961 範,以具有高轉換效率及良好之穩定性,如與具有其他型 式之吸收層化合物、諸如碲化鎘(CdTe)及非晶質矽的一 般使用之光伏打電池作比較。 CIGS吸收層典型係具有良好之結晶性的p型化合物半 導體層。良好之結晶性大致上是需要#,以達成用於高效 率光伏打電池操作所需要之想要的電荷傳輸性質。實際 上,該CIGS吸收層必須被至少局部地結晶化,以便達成高 效率之光伏打操作。經結晶化之c丨G s化合物具有一結晶學 =結構,其視被使用於形成該CIGS化合物的沉積溫 疋,遮以黃銅礦晶體或是閃鋅礦晶體為其特徵。 CIGS化合物能被各種技術所形成。一用以形成 化合物之方法使用化學先質。該等化學先質係沉積在薄膜 中,且接著隨後被退火,以形成該想要之CIGS層。當 先質材料係在一低溫沉積時,該結果之CIGS薄膜係非晶質 的或僅只微弱地結晶化。該CIGS薄膜接著在升高之溫度被 退火,以改善該CIGS化合物之結晶作用,以便提供該想要 之電荷傳輸性質。 然而,在需要造成該等CIGS薄膜之局部結晶作用的升 高溫度,該被沉積薄膜中之硒係比其他元素更易揮發的。 因此,當使該等先質層退火以改善結晶化及提供具有該想 要之組成與化學計量的CIGS化合物時,硒通常被加入。此 形成。IGS薄膜化合物之方法係相當地費時及於該蒸氣相中 需要大量之硒,這增加該等製造成本。 用以形成CIGS化合物之另一方法使用真空蒸發法。與 7 201118961 以先質材料所製造之CIGS光伏打電池作比較,藉由同時蒸 發所製造之CIGS光伏打電池可具有高光伏打轉換效率。於 此方法中,銅、銦、鎵、及硒係同時蒸發至一基板上。同 時蒸發允許用於該薄膜化學計量之精確控制及允許用於該 薄膜光吸收層中之成份分級。因此,同時蒸發可被精確地 使用於剪裁該譜帶間隙,以便達成最佳之光伏打性能。然 而銅、銦、鎵、及砸之同時蒸發係一可為難以使用在工 業規模上之製程技術,因為其係難以遍及大表面積均勻地 蒸發材料。 本教示的一態樣係提供沉積源、系統、及操作此等沉 積源與系統之方法,以有效率及可控制地提供用於極多型 式之裝置、諸如CIGS光伏打電池的製造之多數被蒸發來源 材料。本教示之另一態樣係提供沉積源、系統、及操作此 T沉積源與系統之方法,以有效率及可控制地提供用於極 夕型式之裝置、諸如有機發光二極體(OLED)裝置的製造之 早—破蒸發來源材料。所層技術領域中具有通常知識者應 了解雖然本教示的_些態樣係關& cigs光伏打電池及 OLED裝置之製造作敘述,此揭示内容中之教示應用於任何 可使用被蒸發材料戶斤製造之另-㈣的裝置。 【實施方式】 圖1 A說明根據本教示的線性沉積源100之橫載面透視 圖1線性沉積源咖包括以線性組構㈣至該複數傳導 通道104且接著輕接至複數喷嘴106之複㈣禍1〇2。該複 坩堝102之每—個包括一蒸發來源材料,其可為相同或201118961 VI. Description of the Invention: [Technical Field to Which the Invention pertains] This teaching is generally directed to equipment and methods for the flux of raw material vapors for organizational purposes only, and is not the subject matter described in this application. [Prior Art] A deposition method for depositing on a substrate. The subsections used herein are to be construed as limiting the application in any way to the continuation of the application of the U.S. Patent Application Serial No. 12/628,189, filed on November 30, 2009. The deposition source is its title, and the US Provisional Patent Application No. 61/, entitled "Deposition Source for Co-deposited Copper 'Indium, and Gallium", and related methods, dated February 27, 2009, U.S. Provisional Application No. 61/138,932, entitled "Deposition Sources, Systems, and Related Methods for Co-Deposition of Copper, Indium, and Gallium", No. 156,348, and December 18, 2008, is preferred. The entire specification of U.S. Patent Application Serial No. 12/628,189, U.S. Provisional Patent Application Serial No. 61/156,348, and U.S. Provisional Application Serial No. 61/138,932 is incorporated herein by reference. Large-area substrate deposition systems have been used for many years to process elastic mesh substrates and rigid panel substrates for a wide variety of substrate materials. Many conventional systems are designed to handle plastic mesh substrates and rigid panels. Glass substrate. The mesh substrate or rigid panel passes directly over the linear deposition source. A conventional linear deposition source suitable for evaporating a material on a mesh substrate or a rigid panel substrate comprises a boat-shaped crucible, typically Formed by the refractory material used to hold the source material of 201118961. The vapor outlet tube simultaneously spaces the vapors. One or more are linearly arranged. The stack is placed at the vapor outlet for use as a vapor outlet - Evaporation space and use as a steam outlet opening system along the source [Invention content] You 丨,, 立Μ Μ 4 ^ 驭 Specific implementation 4 J 4th on the 1st / fei丨ήί·々 A. «j-· The special features, structures, or features described in the embodiment of the plant are included in at least the teachings of the teachings. In the various positions in the description, the '' The expressions of the phrases in the embodiments are not necessarily all referring to the same specific embodiments. It should be understood that the individual steps of the method of the present teachings can be performed in any order and/or as long as the teachings remain different. Being applied Furthermore, the device and method of the teachings may include any number or all of the specific embodiments of the description as long as the teachings can maintain the operation. The teachings are described in more detail with reference to exemplary embodiments thereof. The present teachings are as shown in the drawings. Although the teachings are described in conjunction with various specific embodiments and examples, the description is not intended to limit the teachings to the specific embodiments. Instead, the teachings include various alternatives, modifications, and Equivalents are known to those of ordinary skill in the art, and those of ordinary skill in the art having the right to use the teachings herein will recognize additional variations within the scope of the disclosure. Modifications, specific embodiments, and other fields of use, as described herein. This teaching is generally directed to apparatus and methods for producing a flux of deposition source material vapor for deposition on a substrate. Some aspects of this teaching relate to 201118961: A linear deposition source used to produce a flux of vapor deposited from a source material deposited on a mesh substrate, a rigid panel substrate, or another elongated workpiece. Other aspects of the present teachings relate to linear deposition sources suitable for producing a flux of deposition source material vapor for deposition on a substrate holder that supports a plurality of conventional substrates, such as semiconductor substrates. In many specific embodiments, which are not taught, the methods and apparatus are related to deposition by evaporation. As used herein, "evaporation," means converting a 6-source material into a vapor, and includes several techniques normally used in the art, such as vaporization, evaporation, and sublimation. The deposition source material can be in any material state. In the specific embodiment, the teaching apparatus and method are used to simultaneously evaporate two or more different materials to a substrate, such as a mesh substrate or a rigid substrate. On a panel substrate, in some specific examples, the teachings and methods of the present teachings are used to evaporate a single material onto a substrate, such as a mesh substrate or a rigid panel substrate. Use in a majority or partitioned cassette. A single deposition material will increase repeatability and will increase the flux ratio. One application of the present teachings relates to methods and apparatus for simultaneously depositing copper, indium, and gallium onto a mesh substrate or a rigid panel substrate. A compound (c I g compound) in which gallium replaces all or part of indium indium and copper indium is a compound known as copper indium gallium diselenide (CIGS compound). CIGS compounds are generally made For the manufacture of photovoltaic cells. In particular, CIGS compounds are generally used as absorbers in thin film solar cells. These CIGS compounds have a direct band gap that allows solar radiation in the visible region of the electromagnetic spectrum. The strong absorption. CIGS photovoltaic cells have been shown in the 6 5 201118961 model to have high conversion efficiency and good stability, such as with other types of absorber compounds, such as cadmium telluride (CdTe) and amorphous germanium. The commonly used photovoltaic cells are used for comparison. The CIGS absorber layer is typically a p-type compound semiconductor layer with good crystallinity. Good crystallinity is generally required # to achieve the needs of high-efficiency photovoltaic cell operation. The desired charge transport properties. In fact, the CIGS absorber layer must be at least partially crystallized in order to achieve a highly efficient photovoltaic operation. The crystallized c丨G s compound has a crystallographic = structure, which is considered to be used. The deposition temperature of the CIGS compound is characterized by the presence of chalcopyrite crystals or sphalerite crystals. CIGS compounds can be Techniques are formed. A method for forming a compound uses a chemical precursor. The chemical precursor is deposited in a film and then subsequently annealed to form the desired CIGS layer. When the precursor material is deposited at a low temperature The resulting CIGS film is amorphous or only weakly crystallized. The CIGS film is then annealed at elevated temperatures to improve the crystallization of the CIGS compound to provide the desired charge transport properties. However, in the elevated temperature required to cause local crystallization of the CIGS film, the selenium in the deposited film is more volatile than other elements. Therefore, when the precursor layer is annealed to improve crystallization and provide Selenium is usually added in the desired composition and stoichiometric amount of CIGS compound. This formation of the IGS film compound method is quite time consuming and requires a large amount of selenium in the vapor phase, which increases the manufacturing cost. Another method for forming a CIGS compound uses a vacuum evaporation method. Compared with 7 201118961 CIGS photovoltaic cells made of precursor materials, CIGS photovoltaic cells manufactured by simultaneous evaporation can have high photovoltaic conversion efficiency. In this method, copper, indium, gallium, and selenium are simultaneously evaporated onto a substrate. Simultaneous evaporation allows for precise control of the stoichiometry of the film and allows for fractionation of the components used in the light absorbing layer of the film. Therefore, simultaneous evaporation can be accurately used to tailor the band gap to achieve optimal photovoltaic performance. However, the simultaneous evaporation of copper, indium, gallium, and antimony can be a process technology that is difficult to use on an industrial scale because it is difficult to uniformly evaporate materials over a large surface area. One aspect of the teachings is to provide a deposition source, system, and method of operating such deposition sources and systems to efficiently and controllably provide a majority of devices for use in a wide variety of devices, such as CIGS photovoltaic cells. Evaporate the source material. Another aspect of the present teachings provides a deposition source, system, and method of operating the T deposition source and system to efficiently and controllably provide a device for use in a luminescent type, such as an organic light emitting diode (OLED). The early manufacture of the device - the evaporation of the source material. Those having ordinary skill in the art of the layer should understand that although the teachings of the present teachings are related to the manufacture of photovoltaic cells and OLED devices, the teachings in this disclosure apply to any household that can use evaporated materials. The device manufactured by the other - (4). 1A illustrates a cross-sectional view of a linear deposition source 100 according to the present teachings. FIG. 1 is a linear deposition source comprising a linear configuration (4) to the plurality of conduction channels 104 and then lightly coupled to a plurality of nozzles 106. The disaster is 1〇2. Each of the retannings 102 includes an evaporation source material which may be the same or

201118961 不同的來源材料。該複數傳導通道104之每一個的輸入被 耦接至該複數坩堝1 02之個別一坩堝的輸出。於很多具體 貫施例中’當該等被蒸發材料正在該複數傳導通道1 中 運送時,忒複數傳導通道丨〇4被設計,以致沒有被蒸發材 料之互混。 一外殼1 08容納該複數坩堝丨〇2〇該外殼1 〇8係由不銹 鋼或一類似材料所形成。於一些具體實施例中,流體冷卻 通道係沿著該外殼108定位。該外殼丨〇8亦包括一將該外 殼108附接至真空室(未示出)之密封凸緣丨丨〇。該線性沉積 源100的一項特色係該等坩堝位在該真空室之外側,且因 此它們輕易地被再充填及提供服務,藉此增加可用性。一 包括該複數傳導通道104及該複數喷嘴丨〇6之本體丨丨2延 伸通過該外殼1 0 8之密封凸緣1 1 〇。於一些具體實施例中, 流體冷卻通道係沿著本體11 2定位。 於圖1A所示之具體實施例中,線性沉積源丨〇〇包括呈 線性組構之三個坩堝102,使該三個傳導通道ι〇4之個別傳 導通道的輸入被耦接至該三個坩禍1 02之個別坩堝的輸 出。該等喷嘴1 06被定位在沿著該複數傳導通道丨〇4之每 一個的複數位置。然而,因為圖1 A係一橫截面視圖,僅只 該中間傳導通道104、及該等噴嘴1〇6的一半被顯示在圖 1A中。 所屬技術領域中具有通常知識者將了解能使用極多型 式之坩堝。譬如,至少部份該複數坩堝能包括形成在如關 於圖4所敘述之另一坩禍内側的至少一坩渦。該複數坩禍 201118961 1 0 2包括適合用於該特則+由丨 ' 之製造製程的蒸發材料。於报多具 體實施例中,該複數祕+a ' ㈣链… 〇2之每一個包括-不同的蒸發 材枓。·#如,該三個掛 竭之母一個可包含銅、銦、及鎵之 一,以便提供一用於有蚀、玄 有政率地同時蒸發CIGS基光伏打裝置 之功能性吸收層的材料夾 十爪源。然而,於一些具體實施例中, 該複數坩堝之至少二個々 個包含相同之沉積材料。譬如,該三 個坩禍之每一個能包含 ^ , 匕3用以〉儿積〇led裝置用之接點的單 一材料糸統。 一或多個掛堝加熱器丨14 、 破疋位成與该複數坩堝1 02熱相 通。該等i#塌加舞3|丨丨41 * 器114被设計及定位,以增加該複數掛 禍⑽之溫度,以致該㈣㈣1〇2之每一個將其 =積源材料蒸發進人該複數傳㈣道⑽的—個別傳導通 ㈣力:熱器1M被要求將該蒸發來源材料加熱至 :了 : &此:坩堝加熱器可為由石墨、碳化矽、耐火材 料、或其他很高熔點材 何讨所办成。s亥專坩堝加熱器114可 =單-加熱器或可為複數加熱器。譬如,於一 該複數㈣加熱器之每-個係可個別地控制,以 致違複數掛禍加熱器之個別坩 彳μ + — 4 Ή π加熟态係與該複數坩堝 1 02之母一個的個別坩堝熱相通。 該等坩堝加熱器〗Μ可為任何 mu 巧1玎型式之加熱器。譬如, “二禍加熱器m可為阻抗式加熱器,如在圖丨八中所顯 二阻抗式加熱器的一具體實施例係關於圖6α“β更詳 -田地敘述。該等坩堝加熱器丨14亦 ..οβ e j J马極多型式的RF感應 加…益及/或紅外線加熱器之一。 %恨多具體實施例中,201118961 Different source materials. The input of each of the plurality of conduction channels 104 is coupled to the output of the individual ones of the plurality of turns 102. In many specific embodiments, when the vaporized material is being transported in the plurality of conductive channels 1, the plurality of conductive channels 丨〇4 are designed such that they are not intermixed by the evaporating material. A housing 208 accommodates the plurality of rims 2 and the outer casing 1 〇 8 is formed of stainless steel or a similar material. In some embodiments, the fluid cooling passageway is positioned along the outer casing 108. The outer casing 8 also includes a sealing flange 将该 that attaches the outer casing 108 to a vacuum chamber (not shown). One feature of the linear deposition source 100 is that the clamps are on the outside of the vacuum chamber, and thus they are easily refilled and serviced, thereby increasing usability. A body 丨丨 2 including the plurality of conductive passages 104 and the plurality of nozzles 6 extends through the sealing flange 1 1 该 of the outer casing 108. In some embodiments, the fluid cooling passage is positioned along the body 11 2 . In the embodiment illustrated in FIG. 1A, the linear deposition source includes three turns 102 in a linear configuration such that the inputs of the individual conductive channels of the three conductive channels ι4 are coupled to the three The output of the individual 11 02. The nozzles 106 are positioned at a plurality of locations along each of the plurality of conductive channels 丨〇4. However, because Figure 1A is a cross-sectional view, only the intermediate conductive channel 104, and half of the nozzles 1〇6 are shown in Figure 1A. Those of ordinary skill in the art will appreciate that a wide variety of models can be used. For example, at least a portion of the plurality of turns can include at least one vortex formed on the inside of another cause as described with respect to FIG. The plural number of accidents 201118961 1 0 2 includes evaporation materials suitable for use in the manufacturing process of this special + by 丨 '. In the multi-specific embodiment, the complex number +a '(four) chain... 〇2 each includes - a different evaporating material. ·#. The three exhausted mothers may comprise one of copper, indium, and gallium to provide a material for the etched, metamorphic simultaneous evaporation of the functional absorbing layer of the CIGS-based photovoltaic device. Clip the ten claw source. However, in some embodiments, at least two of the plurality of turns comprise the same deposited material. For example, each of the three disasters can contain ^, 匕3 for a single material system used for the joints of the LED device. One or more hanging heaters 丨14 are broken into heat and communicate with the plurality 坩埚102. The i# 加加舞3|丨丨41* device 114 is designed and positioned to increase the temperature of the complex smash (10) such that each of the (four) (four) 1 〇 2 evaporates its = source material into the plural Pass (4) Road (10) - Individual Conduction (4) Force: Heater 1M is required to heat the evaporation source material to: & This: 坩埚 heater can be made of graphite, tantalum carbide, refractory, or other high melting point What is the material? The s-specific heater 114 can be a single-heater or can be a multiple heater. For example, in each of the plural (four) heaters, each of the heaters can be individually controlled, so that the individual 坩彳μ + - 4 Ή π plus the mature state of the violation of the plurality of heaters is the same as the mother of the complex number 021 02 Individuals are hot and connected. These heaters can be any type of heater. For example, "the two-cause heater m can be an impedance heater, as shown in Figure VIII. A specific embodiment of the two-impedance heater is described in relation to Figure 6a". The 坩埚 heater 丨 14 is also .. οβ e j J horse multi-type RF induction plus ... and / or one of the infrared heaters. % hate many specific examples,

10 201118961 所有該等甜渦加熱器i 14係相同型式之加熱器。然而,在 -些具體實施例中,二或更多該等掛堝加熱器114係不同 型式之加熱器,其具有用以蒸發不同沉積源材料之不同的 熱性質。 料㈣加熱器m或分開的傳導通道加熱器被定位 成與該複數傳導通道1〇4之至少一個熱相通,以致該複數 傳導通道104之每一個的溫度被升高至高於通過該特定傳 導通道之沉積源材料的冷凝點以上。傳導通道加熱器係關 於圖7 A、7B及7C作敘述。所屬技術領域中具有通常知識 者將了解極多料之加㉟器能被使用於加熱該複數傳導通 道104,諸如阻抗式加熱器、RF感應加熱器、及/或紅外 線加熱器。該傳導通道加熱器可為單一加熱器或可為複數 加熱器。超過一型式之加熱器能被使用。於一具體實施例 中,該傳導通道加熱器具有相對該複數傳導通道1〇4之另 一個控制該複數傳導通道104之一的溫度之能力。 圖1B說明一根據本教示的線性沉積源1 〇 1之橫截面透 視圖°玄線性沉積源1 0 1包括以線性組構耦接至該單一傳 導通道104’且接著耦接至複數喷嘴1〇6之複數坩堝1〇2。該 線性沉積源1〇1係類似於關於圖1A所敘述之線性沉積源 1 〇〇 ’除了該本體112僅只包括一傳導通道1〇4以外。該複 數坩堝1 02之每一個包含一蒸發來源材料,其可為相同或 不同的來源材料。該傳導通冑丨Q4之輸人被搞接至該複數 坩堝102的輸出。該複數喷嘴100延伸通過該外殼108之 ㈣凸緣11G。於圖1B中所顯示之具體實施例巾,該線性 11 201118961 ’使該傳導通道 。該等喷嘴106 沉積源100包括呈線性組構之三個坩堝1 〇2 1 04之輸入被耦接至該三個坩堝丨02的輸出 被定位在沿著該傳導通道1 〇4之複數位置。 坩堝加熱器Π4被使用於增加該三個坩堝1〇2之溫 度,故該等坩堝將該沉積材料蒸發進入該傳導通道。該 等掛禍加熱器m或一分開的傳導通道加熱器被定位成: 該傳導通道104熱相通,以致該傳導通道1〇4之溫度被升 高至高於通過該傳導通道104之沉積源材料的冷凝點以 上。該傳導通道加熱器係關於圖7A、76及7C作敘述。所 屬技術領域中具有通常知識者將了解極多型式之加熱器能 被使用於加熱該傳導通道104,諸如阻抗式加熱器、RF感 應加熱器、及/或紅外線加熱器。 該複數噴嘴106之每一個的輸入被耦接至該傳導通道 1〇4之輸出,以致被蒸發之沉積材料係由該複數坩堝1〇2運 送經過該傳導通道ΠΜ至該複數喷嘴⑽,在此該被蒸發之 沉積材料係由該複數喷嘴106射出’以形成一沉積通量。 圖2A說明關於圖1A& 1B所敘述之線性沉積源1〇〇 與的一橫截面視圖,並使該複數喷嘴106被定位,以 致它們在—向上之方向中蒸發沉積材料。本教示之線性沉 積源的-特色係該複數喷嘴106可相對該複數㈣咖被 定位在任何方位。用於該複數傳導通道1〇4或用於該單一 傳導通道1()4,之加熱器被設計成可與該複數喷冑⑽之方 位無關地防止該被蒸發之沉積源材料冷凝。 圖2B說明一根據本教示的線性沉積源15〇之橫載面視 12 201118961 圖,並使該複數噴嘴106被定位,以致它們在一往下之方 向中蒸發沉積材料。圖2B之線性沉積源15〇係類似於關於 圖2A所敘述之線性沉積源1〇〇及1〇1。然而,該複數喷嘴 106被定位,使其出口孔於該複數坩堝1〇2之方向中面朝往 下。 圖2C說明一根據本教示的線性沉積源152之橫截面視 圖’使該本體11 2’包括被定位在一直立方向中之複數噴嘴 106»該線性沉積源152係類似於關於圖2a所敘述之線性 沉積源100與UH,除了該線性沉積源152包括一有角度之 耦接件154以外,該有角度之耗接# 154改變該本體 由該密封凸緣110相對該法線方向之方位。所屬技術領域 令具有通常知識者將了解該有角度之耗接件154可在任何 角度相對該密封凸緣110之法線方向定㈣本體112、如 此二教^之線性沉積源的一特色係包括該複數噴嘴1〇6 :本體"2’可相對包括該複數掛堝1〇2之外殼ι〇8被定位 =何方位。用於該複數傳導通 ::::…"―止―: 視二7:二=的另-線性一之橫截面 嘴106。該線性、。 定位在—直立方向中之棱數喷 性沉積源丨52 積源156係類似於關於圖2C所敘述之線 ⑸以外,該丁除了該線性沉積源、156包括一 T形耗接件 緣110相對該、馬接件158改變該本體112"由該密封凸 〇線方向之方位。於圖2D中所顯示之具體實 13 201118961 1 5 8之兩側面上延伸 施例中,該本體i 12,,在該τ形耦接件 於該直立方向中。 圖3 Α說明一根據本教示的線性沉積源之橫截面透 視圖’該線性沉積源、包括以線性組構㈣至複數傳導 通道204且接著耦接至該複數噴嘴2〇6之單一坩堝2〇2。該 線性沉積源2GG係類似於關於圖丨及2所敘述之線性沉積 源100然而,忒線性沉積源200僅只包括一個掛禍202。 該單-时禍202被定位在-外殼細+,如關於圖i所敘 述者。 該單一坩堝202能具有被設計成用於一型式之沉積源 材料的單一隔間。此一耦接至該複數傳導通道204之坩堝 將具有相當高之沉積通量生產量。另一選擇係,該單一坩 堝202可具有局部地隔絕該坩堝2〇2之各區段的複數隔板 210 ’在此設計該局部被隔絕區段之每一個的尺寸,用以定 位複數》儿積源材料之一。該複數沉積源材料可為相同之材 料或可為不同的材料。在該局部被隔絕區段之每一個中使 用相同之沉積源材料將增加重複性,且將增加該通量比 率。於該單一增堝202包括複數局部地隔絕區段之具體實 把例中’該複數傳導通道204之每一個的輸入被定位成緊 接該複數局部地隔絕區段之一區段。 加熱器212被定位成與該單一掛埸202熱相通。該加 熱器2 12增加該坩堝2〇2之溫度,以致該坩堝將該至少一 沉積材料蒸發進入該複數傳導通道204或進入該單一傳導 通道204’。該加熱器2 1 2或第二加熱器被定位成與該複數 14 201118961 傳導通道204之至少_個成盥兮 1U汊興忒早一傳導通道2〇4'熱相 通’以便升高該複數傳導诵道2〇 、 哥通道204或該單一傳導通道2041 之溫度,以致被蒸發之沉 儿積原材枓不會冷凝。一些加熱器 2 1 2能相對該複數傳導通 喂逼2U4之另—個傳導通道升高該複 數傳導通道204之至少一個的溫度。 、h,、,、板214被定位緊接至該掛肖撤及至該複數傳 導通道204’以提供該_搬及該複數傳導通道綱之至 少局部熱隔離。於一此 ▲ ^ “體貫施例中,該隔熱板214被設 計及定位,以相對該坩埚2〇2 202之另—區段控制該坩堝202 的 又之溫度。亦於一此呈>1*訾 , 二具體實知例中,該隔熱板2 1 4 被設計及定位,以便相斜 — 子對至^其匕傳導通道204提供該複 數傳導通道204之至少_佃偟道、s 個傳導通道的至少局部熱隔離, 以致不同的溫度可被維持在該複數傳導料204之至少二 個傳導通道中。於此具體實施例中’該複數傳導通道204 ^個傳導通道可被以具有不同熱性質之隔熱材料隔 熱。 該複數噴嘴206被耦接至該複數傳導通道2〇4。被蒸發 之沉積材料係由該單一掛堝2〇2經過該複數傳導通道2〇4 運&至4後數喷嘴206 ’在此該被蒸發之沉積材料係由該複 數嘴嘴206射出,以形成一沉積通量。 圖3B說明一根據本教示的線性沉積源2〇〇之橫截面透 視圖,該線性沉積源2〇〇包括以線性組構耦接至單一傳導 通=2〇4且接著輕接至複數噴嘴裏之單一㈣2〇2。該線 性沉積源、201係類似於關於圖3A戶斤敘述之線性沉積源 15 201118961 200。然而,該線性沉積源201僅只包括一個傳導通道咖’。 本教示之線性沉積源係报適合用以在大面積工件、諸 如網模基板及堅硬的面板基板上蒸發一或多個不同沉積源 材:了線性沉積源之線性幾何形狀使得它們报適合用 以處理寬廣及大面積工件、諸如被使用於光伏打電池之網 模基板及堅硬的面板基板,因為該線性沉積源能在—相冬 大面積上方提供有效率及高度可控制之蒸發材料。曰 本教示之線性沉積源的一特色為它們係相當小巧 於該複數沉積源之每一個及對於該複數傳導通道之每一 個:本教示之線性沉積源的另一特色係它們使用共用:: 熱器及共用的隔熱板材料’其改善报多設備性能度量,諸 如尺寸、設備成本、及操作成本。 里,· 圖4說明一用於本教示之線性沉積源的堆祸3〇〇之橫 截面透視圖’該掛竭係由二型式之材料所形成。該掛物 包=在另一掛禍内側之至少一㈣。於圖4中所顯示 之具體貫施例中,該掛肖則包括—I套在外部_取 内側之内部坩堝302。於此坩堝設計中’二型式之材料能被 使用’以裝盛該沉積材料,以便改善該掛禍之性能。於1 他具體實施例中’至少-坩堝係嵌套在至少二其他坩堝^ 側0 〇 譬如,於一具體實施例中,製成該複數坩堝1〇2(圖以 及1.B)或㈣202(圖从及3B)之一或多個,其具有由熱解 氮化硼所形成之内部坩堝3〇2及由石墨所形成之外部坩堝 304。於此具體實施例中,由熱解氮化顯形成之内部掛禍 201118961 沉積源材料。熱解氮化硼係-無孔性、高度非活 寺別純粹之材料。此外,埶 熔點、良杯沾,,,'解氮化硼具有-很向之 、…: 及優異之熱衝擊性質。這些性質 n # ㈣σ心直接地裝盛大部份之蒸發來源 …、、而,熱解氮化硼係特別具脆性的, 損壞。ϋιn 』且口此你易於 :展氧化物及金屬氧化物亦可被使用於該内部㈣材 厂μ外部掛禍304係由一材料所形成,諸如石墨,其係 ::久,但仍然能夠高溫操作。該更耐久之材料保護該埶 解氮化蝴不遭受損壞。於另一具體實施例中,該内部掛塥 :由石英所形成,且該外部坩堝係由氧化鋁所形成。—石 央内。Ρ坩堝及一氧化鋁外部坩堝之組合具有相當高之效 能’且係相當不貴的。 圖5Α說明根據本教示之線性沉積源1⑽的一部份之透 視俯規圖其顯示耦接至該外殼108中之三個坩堝】〇2的 二個傳導通道1G4。該三個傳導通道1G4之每—個的輸入 Π8被耦接至該三個坩堝1〇2之個別坩堝的輸出。該三個傳 導通道1 04被設計,以致當該被蒸發之材料正被運送經過 該複數傳導通it 1()4肖,沒有來自該三個料1()2的任何 一個之被蒸發材料之顯著的互混。於很多沉積製程中,其 重要的疋大體上防止沉積材料之互混,以便在該沉積材料 抵達正被處理之基板的表面之前防止二或更多沉積材料發 生反應。 圖5B說明一根據本教示之線性沉積源1 0 1的一部份之 通視俯視圖,其顯示耦接至該外殼1〇8中之三個堆螞1〇2 17 201118961 的單一傳導通道104,。該傳導通道1〇4之輪人ιΐ8被輕接 至該三個堆禍102之每-個的輸出,如於圖以及⑺中所 顯示,或被搞接至該單-坤禍202之輪出,如於圖从及⑼ 中所顯示》 圖6A係用於本教示的線性㈣源之阻抗式料加熱器 400的礼之透視圖,其顯示該掛瑪加熱器彻之定位啰 掛禍叫圖!)的内側及三側面。於各種具體實施例中^ 堆堝加熱器400可被固定在該外殼1〇8(圖υ中,或可移去 地附接至該外殼該掛禍加熱器彻在圍繞該㈣ι〇2 之底部及側面上包括複數阻抗式加熱元件4〇2。於圖6Α中 所顯示之具體實施例中,該等阻抗式加熱元件4〇2係複數 Ρ兩開之石墨匯流排條棒術,該等石墨匯流排條棒係石 2之線性條I支撑桿棒術將該等石墨匯流拼條棒彻 :構性地連接在一起’且亦電絕緣該等石墨匯流排條棒 。該等阻抗式加熱元件4〇2可包括被定位於該等加妖元 件嫩的相反端部間之蛇形石墨彈電線被進㈣㈣ :广儿積源、100之外殼108 ’以連接該等石墨匯流排條棒 Α至-電源(未示出)。該等石墨匯流排條棒402包括 牢固地附接該等電線之螺絲406。 圖6B係用以加熱該複數时禍1〇2之每一個的該複 禍加熱器400之-的外面之透視圖(圖…6β中所顯八 之透視圖係類似於在圖6A中所顯示之透 ’:: 掛禍加熱器之所有四側面。 〜、,4不该 圖7A係一根據本教示的線性沉積源1〇〇之側視圖,其 18 201118961 顯示用以加熱該複數傳導通道之傳導通道加熱器、圖劃頁 示包括該等傳導通道加熱器之桿棒13〇的一透視圖。圖% 說明-根據本教示的線性沉積源丨⑻之本冑ιΐ2的透視 圖’其顯示-將該等桿棒130之端部接合至該本體ιΐ2的 耦接件132。 參考圖1A、IB、7A、7B、及%,該等桿棒13〇係於 該本體H2之縱長方向中沿著該等傳導通道1〇4之長度被 疋位緊接至該等傳導通道1()4。該等桿棒i3Q可為由任何型 式之对高溫材料所形成,諸如石墨、碳切、耐火材料、 或其他很高熔點的材料。該等桿棒13〇被電連接至一電源 (未示出)之輸出,該電源產生一流經該等桿棒13〇之電流, 藉此增加料桿棒13G之溫度。料桿棒i3g可使用一提 供足夠運動之彈簧或電線束被電連接至該電源之輸出,以 於正;1¾ #喿作期間允許該等桿# 13()之熱膨脹。在該等桿棒 中藉由來自5亥電源的電流所產生之熱輕射進入該等傳 導通道1G4’藉此升高該等傳導通道1G4之溫度,以致運送 過”亥複數傳導通道i Q4之被蒸發的來源材料不會冷凝。 圖7A亦顯不將各段桿棒〗3〇附接在一起之複數耦接件 132。於一些具體實施例中,該本體"2之長度係如此長, 以致:多數段桿棒130耦接在-起係更具成本效益、可靠、 及更易於製造。所屬技術領域中具有通常知識者將了解有 "夕土式之輕接件’其可被使用於將多數段桿棒1 %麵接 在一起。擘如丨 机 ° —設有螺紋之耦接件可被使用於將二段樟 棒搞接在起。該輕接件132經過該等桿棒13G之整個長 19 201118961 度提供-具有相對恆定之阻抗的連續電連接。 圖8說月°亥本體112之機架500(圖1),該機架包括一 伸縮桿502。參考圖1A、1R、7A „ ^ B 7A、及8,該複數傳導通道 1 04係由該本體1 1 2夕她加& ▲ 之械木50〇内側的空間移去,以便觀看 5亥伸縮桿502。該伸縮;|;里, 502有時候被使用,因為該本體 112於正常操作期間遭受顯著之熱膨脹及收縮。該等桿棒 130及该複數傳導通道1〇4之熱膨脹係數可為與該機架· 及该本體112中之其他零組件的熱膨脹係數顯著地不同。 此外,該機架500及★玄太种Η Λ丄 中之其他零組件、諸如該 ^干棒U0及該複數傳導通道1〇4之間可有顯著的溫度差 使因此’其想要的是使該機架500相對該本體Η2中之 由^組件、諸如該複數傳導通道1〇4及該等桿棒⑽ 由地伸出'及收縮。 圖8中所顯示之伸縮捏^ Λ λ及 中 縮衿500係可被使用於該機架 :…於圖8中所顯示之具體實施例 至該機架5。〇的二=二504或其他型式之緊固件附接 結區段_伸出,一藉二;:Λ缩桿502係伸出 藉此在該機架_中建立用於該本體112 中之零組件的空間,該本 个趙112 架5〇〇夕他山 體112中之零組件正在一比該機 體伸出速率更快的速率伸出。另一選擇係,當該本 …::Γ件正比該機架500更快地收縮時,該“ ,506折疊’藉此減少於該機 : 該收縮本體U2之空間。 間以匹配 圖9Α係一用於根據本教示之線性沉積源的該複數掛蜗 20 201118961 102(圖1A及1B)及用於該複數傳導通道1〇4之隔熱板 的橫截面透視圖。圖9B係圖9A中所顯示之隔熱板6〇〇的 完整透視圖。所屬技術領域中具有通常知識者將了解該隔 熱板600可被極多型式的隔熱材料之任何一種所製成。譬 如’於-具體實施例中,該隔熱& _係由碳纖維碳合成 材料所形成。 圖9C說明根據本發明之隔熱板65〇的一具體實施例之 角落橫截面圖。僅只該頂部及一側表面被顯示在圖9c中’ 以更易於說明該隔熱板650中之各種層。於—些具體實施 例中’言亥隔熱650㈣一在該頂部及底部表面上及該等 側表面上之外部層6仏於各種具體實施例中,該外部層 652可為堅硬的、耐久的、及能具有一相當高階之腐蝕防 複。—反射材料可被沉積在該等外部層652之至少一些的 外部表面上,以改善該隔熱板65〇之熱性質。 於—具體實施例中,該外部層652係碳纖維板。學如, 該外部層652可為具有—厚度之碳纖維板,該厚度係在⑽ ^ 0.08英忖厚之範圍中。於一些具體實施例中該碳纖維 ,、在至少-表面被塗覆以一傳導性材料、諸如一金屬碳 • 0 〇 該隔熱板650亦在該等頂部及底部表面上與該等側表 面上包括複數耐熱材料層654。於—些具體實施例中, :熱材料層654可為耐熱磁磚。譬如,在此可有超過五個、 過十個、或超過2〇㈣被定位在該隔熱板㈣ 底部、及/或側表面上之熱材料層654。於一些具體實:例 21 201118961 中,至少部份該複數耐熱材料層654具有一在〇 〇〇 1吋至 0.020吋厚的範圍中之厚度。於一些具體實施例中,一反射 材料被疋位在§亥複數耐熱材料層6 5 4之至少一層的至少一 外部表面上。 於些具體實施例中,該耐熱材料層654係各種型式 的耐火金屬箔層之一。亦於一些具體實施例t,該等耐熱 材料層係石墨材料層。極多型式之石墨材料層能被使用。 譬如,該等石墨材料層能為由Graf〇il或任何另一型式之 彈性石墨材料所形成’該彈性石墨材料係由純粹、天然之 石墨薄片所製成。Grafoil係、很適合供用作—隔熱板材 料,因為其係耐熱、防火、抗腐敍及抗侵録化學品的。 於一些具體實施例中,該隔熱板65〇包括一被定位在 部份該複數耐熱材料層654之間的堅硬材料656。該堅硬的 材料656典型係比該等耐熱材料層654更厚。該堅硬的材 料656對该隔熱板提供機械強度及腐蝕防護性。極多型式 ,堅更的材料此被使用,其可為與被定位在該複數耐熱材 料層654 <至少一層&外部表面上之堅硬的材料相同或不 同。譬如,該堅硬的材料可為很多型式的碳纖維板之一, 諸如具有碳基質之碳纖維布,其在該工#中—般被意指為 CFC或奴於—具體實施例中該碳纖維板具有—於〇 〇2 及〇·08忖厚的範圍中之厚度。於-些具體實施例中,該碳 ’截=板在至少-表面上被㈣以_傳導性材料、諸如一金 屬奴化物。此外’言玄堅硬的材料可為一非纖維強化的石墨 22 201118961 、如此,於各㈣體實施例中,堅硬的材料652、656可 被疋位在该等耐熱材料層654之外部及/或内部表面上 譬如,於-特定之具體實施例中,該隔熱65〇°包括頂部 及底部表面,其包括該以下諸層:⑴塗覆以耐火陶莞材料 之堅硬的材料之至少一層,譬如一或二層塗覆有碳化銳之 碳纖維板或類似材料;(2)複數耐火金屬箔片及/或石黑 層’譬如2-20塊耐火金屬箱片及,或石墨層;(3)堅硬的: 料=至少-層’譬如’―或二層碳纖維板;(4)複數耐火金 屬箔片及/或石墨層’譬如’ 2_2〇塊耐火金屬箔片及/或 石墨層,及(5)塗覆以耐火陶瓷材料之堅硬的材料之至少一 層’譬如…或二層塗覆有碳化銳之碳纖維板或類似材料。 參考圖ΙΑ、IB、9A-9C,該隔熱板600之第一區段6〇2 被定位緊接至該複數坩堝102之每一個,以便提供該複數 坩堝102之每一個的至少局部熱隔離。該隔熱板6〇〇之第 一區段602隔熱該等個別之坩堝1〇2,以致如果需要,在處 理期間顯著地不同之坩堝溫度能被維持。對於—些沉積製 程,維持顯著地不同之坩堝溫度係重要的,因為該複數坩 堝102之每一個能接著被加熱至其用於該特別之沉積源材 料的最佳溫度。將該等坩堝102加熱至其用於該特別之沉 積源材料的最佳温度減少負面的加熱效應,諸如沉積材料 之濺射。此外,將該等坩堝1〇2加熱至其用於該特別之沉 積源材料的最佳溫度可顯著地減少該沉積源之操作成本。 於各種其他具體實施例中,該隔熱板600之第一區段 602忐包括複數分開之隔熱板,在此該複數分開隔熱板6〇〇 23 201118961 之個別隔熱板圍繞該複數坩堝丨02之個別坩堝。該複數分 開隔熱板600之每一個可為相同的或可為一不同的隔熱 板。譬如,被使用於加熱較高溫度沉積源材料之坩堝可為 由具有不同熱性質的不同或更厚之隔熱材料所形成。 該隔熱板600之第二區段6〇4被定位緊接至該複數傳 導通道104,以便提供該複數傳導通道1〇4與該複數坩堝 102的至少局部熱隔離。該複數傳導通道1〇4之每一個可為 藉由一分開之隔熱板所隔熱,或單一隔熱板能被使用。於 一些具體實施例中,該隔熱板6〇〇之第二區段6〇4被定位, 以便提供該複數傳導通道104之至少一個相對至少另一傳 導通道的局部熱隔離。換句話說,該隔熱板6〇〇之第二區 段604的設計及定位能被選擇,以允許該複數傳導通道 之至少一個相對該複數傳導通道1〇4之至少另一個的不同 操作溫度。於這些具體實施例中,該複數傳導通道ι〇4之 至少二個#導通道可被以具有+ $熱性質之隔熱材料隔 熱。譬如,該複數傳導通道1〇4之至少二個傳導通道可被 以不同隔熱材料、不同隔熱板厚纟、及,或該等隔熱材料 至特別傳導通道之不同接近度所隔熱。 該隔熱板600係於正常操作期間暴露至很高溫度。一 些根據本教示之隔熱板被製成設有至少一表面,該表面係 由一低放射率材料所形成或具有一減少熱輻射之放射的低 放射率塗層。譬如,該隔熱& 6〇〇之内部或外部表面能被 塗覆以一減少熱傳導之低放射率塗層或任何另一型式之塗 層。任何此等塗層通常被設計成可遍及該線性沉積源之操 24 201118961 作使用期維持恆定之放射率。 與忒外殼1 08及該本體丨i 2作比較及與該外殼丨〇8及 本體U2中之零組件作比較,該隔熱板600亦在不同速率 _出及收縮。於—具體實施例中,該隔熱& _係可運動 地附接至該本冑"2之外& 1〇8及該機架5〇〇的至少一個 (圖δ) ’以致其可於正常操作期間相對該外殼108及該機架 500的至少—個運動。於—些具體實施例中,—伸縮桿被使 用於允許該隔熱板600相對其他來源零組件伸出及收縮。 再者’於-些具體實施例中,該隔熱600包括複數能耐 受熱膨脹及收縮之隔熱材料層。譬如,複數隔熱磁碑能被 使用於增加對熱膨脹及收縮之耐受性。 圖10說明一根據本教示的沉積源100之透視俯視圖, 其顯示該本體112中用以放射蒸發材料至基板或其他工件 上^複數噴嘴106。該複數喷嘴106之每一個的輸入被耦接 至該複數傳導通道1G4的個別傳導通道之輸出,如關於圖 5A所敘述者’或被耦接至該等傳導通道1〇4,之輸出,如關 於圖所敘述者。於圖5 A中所顯示之具體實施例中,該 等被洛發之沉積材料係沒有互混地由該複數坩堝1 〇2運送 經過該複數傳導通道104至該複數噴嘴1〇6,在此該被蒸發 之沉積材料係由該複數喷嘴106射出,以形成一沉積通量。 圖丨〇中所顯示之線性沉積源100說明七群組之喷嘴 106在此每一群組包括三個喷嘴。所屬技術領域中具有通 常知識者將了解根據本教示之沉積源能包括任何數目之噴 嘴群組及在每一群組内的任何數目之噴嘴。於各種具體實 25 201118961 施例中,該該複數喷嘴106之間距可為均句或不均勾的。 本教示之一態樣係該該複數噴嘴106可為不均勻地隔開, 以便達成某些製程目標。譬如’於一具體實施例中,該複 數噴嘴106之間距被選擇,以改善該沉積通量之均句性。 於此具體實施例中’該等噴嘴106接近該本體112之邊緣 的間距係比該等喷嘴106緊接至該本體U2之中心的間距 較接近,如於圖10中所顯示,以便補償靠近該本體Π2之 邊緣的減少之沉積通量。該正確之間距可被選擇,以致节 線性沉積源100緊接至該基板或工件產生—大體上均勾之 沉積材料通量。 於一些具體實施例中,該複數噴嘴! 〇6之間距被選擇, 以獲得高材料利用率,以便降低該沉積源丨〇〇之操作成本 及增加該製程時間及服務間隔間之有效性。亦於一些具體 實施例中,該複數喷嘴106之間距被選擇,以由該複數喷 嘴106提供-想要之沉積通量的重疊,以便達成被蒸發材 料的一預定混合。 ' 於一具體實施例中,該複數喷嘴1〇6之至少其中一個 係定位在由該等傳導通道104之頂部表面16〇之相對該法 線角度的-角度處,以便達成某些製程目#。譬如,:二 具體實施例中’該複數喷嘴1〇6之至少其,一個係定位在 由該等傳導通if 1G4之頂部表自16()之相對該法線角卢的 -角度處’該角度被選擇,以橫越待處理之基板或工:的 表面提供一均勾之沉積通量。亦於—些具體實施例中,, 複數喷嘴1〇6之至少其中-個係定位在由該等傳導通道二10 201118961 All such sweet vortex heaters i 14 are heaters of the same type. However, in some embodiments, two or more of the linked heaters 114 are different types of heaters having different thermal properties for evaporating materials of different deposition sources. The heater (m) heater m or a separate conduction channel heater is positioned in thermal communication with at least one of the plurality of conduction channels 1〇4 such that the temperature of each of the plurality of conduction channels 104 is raised above the specific conduction channel Above the condensation point of the deposition source material. Conduction channel heaters are described in relation to Figures 7A, 7B and 7C. Those of ordinary skill in the art will appreciate that a multitude of devices can be used to heat the plurality of conductive channels 104, such as impedance heaters, RF induction heaters, and/or infrared heaters. The conductive channel heater can be a single heater or can be a plurality of heaters. More than one type of heater can be used. In one embodiment, the conductive channel heater has the ability to control the temperature of one of the plurality of conductive channels 104 relative to the plurality of conductive channels 1〇4. 1B illustrates a cross-sectional perspective view of a linear deposition source 1 根据 1 in accordance with the present teachings. The mysterical linear deposition source 110 includes a linear configuration coupled to the single conduction channel 104' and then coupled to a plurality of nozzles 1 The plural of 6 is 〇1〇2. The linear deposition source 1〇1 is similar to the linear deposition source 1 〇〇 ' described with respect to Figure 1A except that the body 112 includes only one conduction channel 1〇4. Each of the plurality of complexes 102 includes an evaporation source material which may be the same or different source materials. The input of the conduction port Q4 is connected to the output of the complex port 102. The plurality of nozzles 100 extend through the (four) flange 11G of the outer casing 108. In the embodiment of the embodiment shown in Figure 1B, the linear 11 201118961 ' makes the conduction channel. The nozzles 106 deposition source 100 includes three turns of a linear configuration. The input of the input coupled to the three turns 02 is positioned at a plurality of positions along the conductive path 1 〇4. The crucible heater 4 is used to increase the temperature of the three crucibles 1, so that the crucible evaporates the deposition material into the conduction channel. The fault heaters m or a separate conductive channel heater are positioned such that the conductive passages 104 are in thermal communication such that the temperature of the conductive passages 1〇4 is raised above the deposition source material passing through the conductive passages 104. Above the condensation point. The conduction channel heater is described with respect to Figures 7A, 76 and 7C. Those of ordinary skill in the art will appreciate that a wide variety of heaters can be used to heat the conductive pathways 104, such as impedance heaters, RF induction heaters, and/or infrared heaters. The input of each of the plurality of nozzles 106 is coupled to the output of the conductive channel 1-4, such that the evaporated deposition material is transported by the plurality 坩埚1〇2 through the conductive channel ΠΜ to the plurality of nozzles (10), where The evaporated deposition material is ejected by the plurality of nozzles 106 to form a deposition flux. Figure 2A illustrates a cross-sectional view of the linear deposition source 1A described with respect to Figures 1A & 1B, and the plurality of nozzles 106 are positioned such that they evaporate the deposited material in the upward direction. The characteristic of the linear deposition source of the present teachings is that the plurality of nozzles 106 can be positioned in any orientation relative to the plurality of (four) coffee. The heater for the plurality of conduction channels 1〇4 or for the single conduction channel 1() 4 is designed to prevent condensation of the evaporated deposition source material independently of the position of the plurality of squirts (10). Figure 2B illustrates a cross-sectional view of a linear deposition source 15 根据 according to the present teachings, and the plurality of nozzles 106 are positioned such that they evaporate the deposited material in a downward direction. The linear deposition source 15 of Figure 2B is similar to the linear deposition sources 1 〇〇 and 1 〇 1 described with respect to Figure 2A. However, the plurality of nozzles 106 are positioned such that their exit apertures face downwardly in the direction of the complex 坩埚1〇2. 2C illustrates a cross-sectional view of a linear deposition source 152 in accordance with the present teachings 'including the body 11 2' including a plurality of nozzles 106 positioned in an upright orientation. The linear deposition source 152 is similar to that described with respect to FIG. 2a. The linear deposition source 100 and UH, except that the linear deposition source 152 includes an angled coupling 154, the angled drain #154 changes the orientation of the body from the sealing flange 110 relative to the normal direction. Those skilled in the art will appreciate that the angled consumable 154 can be oriented at any angle relative to the normal direction of the sealing flange 110. (4) The body 112, such a feature of the linear deposition source includes The plurality of nozzles 1〇6: the body"2' can be positioned relative to the housing ι8 including the plurality of hooks 1〇2. For the complex conduction conduction ::::..."---: 2:7 = the other - linear one cross section mouth 106. The linear,. Positioning in the erect direction of the ridge number of the effusion source 丨 52 The source 156 is similar to the line (5) described with respect to Figure 2C, except that the linear deposition source 156 includes a T-shaped tang rim 110 The horse piece 158 changes the orientation of the body 112" from the direction of the sealing cam. In the embodiment shown on the two sides of the concrete surface 13 201118961 1 5 8 shown in FIG. 2D, the body i 12 is in the upright direction. Figure 3 illustrates a cross-sectional perspective view of a linear deposition source in accordance with the present teachings. The linear deposition source includes a single 坩埚2〇 in a linear configuration (4) to a plurality of conduction channels 204 and then coupled to the plurality of nozzles 2〇6. 2. The linear deposition source 2GG is similar to the linear deposition source 100 described with respect to Figures 2 and 2, however, the linear deposition source 200 includes only one catastrophe 202. The single-time error 202 is positioned at the outer shell +, as described with respect to Figure i. The single crucible 202 can have a single compartment that is designed for a type of deposition source material. This enthalpy coupled to the plurality of conduction channels 204 will have a relatively high deposition flux throughput. Alternatively, the single raft 202 can have a plurality of partitions 210 that partially isolate the segments of the 坩埚2〇2, where the size of each of the partially isolated segments is designed to locate a plurality of One of the source materials. The plurality of deposition source materials may be the same material or may be different materials. Using the same deposition source material in each of the partially isolated sections will increase repeatability and will increase the flux ratio. In the particular embodiment where the single enhancement 202 includes a plurality of partially isolated segments, the input of each of the plurality of conductive channels 204 is positioned to immediately follow one of the plurality of partially isolated segments. The heater 212 is positioned in thermal communication with the single hanger 202. The heater 2 12 increases the temperature of the crucible 2〇2 such that the crucible evaporates the at least one deposition material into the plurality of conduction channels 204 or into the single conduction channel 204'. The heater 2 1 2 or the second heater is positioned to be in thermal communication with at least one of the plurality of 14 201118961 conductive channels 204 to conduct a heat conduction to the plurality of conduction channels 2〇4' The temperature of the ramp 2, the channel 204 or the single conducting channel 2041 is such that the evaporated material does not condense. Some of the heaters 2 1 2 can raise the temperature of at least one of the plurality of conductive channels 204 relative to the plurality of conductive channels that are forced to pass 2U4. , h, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ▲ ^ "In the embodiment, the heat shield 214 is designed and positioned to control the temperature of the raft 202 relative to the other section of the 坩埚 2 〇 2 202. Also presented here &gt 1*訾, In the specific embodiment, the heat shield 2 1 4 is designed and positioned so as to provide at least a 佃偟 channel of the plurality of conductive channels 204. At least partial thermal isolation of the s conductive channels such that different temperatures can be maintained in at least two of the conductive channels of the plurality of conductive materials 204. In this embodiment, the plurality of conductive channels 204 can be The insulating material having different thermal properties is insulated. The plurality of nozzles 206 are coupled to the plurality of conductive channels 2〇4. The evaporated deposition material is transported by the single hanging channel 2〇2 through the plurality of conductive channels 2〇4 & to 4 after nozzles 206' where the evaporated deposition material is ejected from the plurality of nozzles 206 to form a deposition flux. Figure 3B illustrates a cross section of a linear deposition source 2〇〇 according to the present teachings. Perspective view, the linear deposition source 2〇〇 includes a linear structure Connected to a single conduction pass = 2〇4 and then lightly connected to a single (four) 2〇2 in the complex nozzle. The linear deposition source, 201 is similar to the linear deposition source 15 201118961 200 described with respect to Figure 3A. However, the linearity The deposition source 201 includes only one conduction channel. The linear deposition source of the present teachings is suitable for evaporating one or more different deposition sources on large-area workpieces, such as mesh substrates and rigid panel substrates: linear deposition The linear geometry of the sources makes them suitable for processing wide and large-area workpieces, such as mesh mold substrates used for photovoltaic cells and rigid panel substrates, because the linear deposition source can be provided over a large area of winter Efficient and highly controllable evaporation materials. A feature of the linear deposition sources of the present teachings is that they are quite small for each of the plurality of deposition sources and for each of the plurality of conduction channels: another of the linear deposition sources of the present teachings One feature is that they use a common:: heat exchanger and shared insulation board material' which improves the performance metrics of multi-devices, such as size and equipment. And the operating cost. In Fig. 4, a cross-sectional perspective view of a stacking fault for the linear deposition source of the present teaching is illustrated. The hanging system is formed of a two-type material. The hanging bag = another At least one (four) of the inner side of the catastrophe. In the specific embodiment shown in Fig. 4, the hanging sill includes -1 sleeve on the outer _ taking the inner 坩埚 302 inside. In this design, the 'type 2 material Can be used to hold the deposited material in order to improve the performance of the crash. In his specific embodiment, 'at least - the tether is nested on at least two other sides. For example, in one embodiment Forming one or more of the plurality 坩埚1〇2 (Fig. and 1.B) or (4) 202 (Fig. and 3B) having an internal 坩埚3〇2 formed by pyrolytic boron nitride and by graphite The outer crucible 304 is formed. In this embodiment, the internal source material is formed by pyrolytic nitridation. Pyrolytic boron nitride - non-porous, highly non-living. In addition, 埶 melting point, good cup, and, 'boron nitride have - very good, ...: and excellent thermal shock properties. These properties n # (4) σ heart directly accommodates most of the evaporation source ..., and, the pyrolytic boron nitride is particularly brittle and damaged. Ϋιn 』 and this is easy for you: the oxides and metal oxides can also be used in the interior (four) material factory μ external disasters 304 series is formed by a material, such as graphite, which is: long, but still able to heat operating. The more durable material protects the 埶 nitriding butterfly from damage. In another embodiment, the inner raft is formed of quartz and the outer lanthanum is formed of alumina. —Shiyang. The combination of niobium and an aluminum outer crucible has a relatively high performance' and is quite inexpensive. Figure 5A illustrates a perspective view of a portion of a linear deposition source 1 (10) in accordance with the present teachings showing two conductive channels 1G4 coupled to three of the housings 108. The input Π8 of each of the three conduction channels 1G4 is coupled to the output of the individual 坩埚1〇2. The three conductive channels 104 are designed such that when the evaporated material is being transported through the plurality of conductive passes 1 1 , there is no evaporated material from any of the three materials 1 () 2 Significant intermixing. In many deposition processes, the important enthalpy generally prevents intermixing of the deposited materials to prevent two or more deposited materials from reacting before the deposited material reaches the surface of the substrate being processed. 5B illustrates a top plan view of a portion of a linear deposition source 110 in accordance with the present teachings, showing a single conduction channel 104 coupled to three stacks 1 〇 2 17 2011 18961 in the housing 〇8, . The wheel ι 8 of the conduction channel 1〇4 is lightly connected to the output of each of the three stacking faults 102, as shown in the figure and (7), or is connected to the single-kun 202 Figure 6A is a perspective view of the linear (four) source impedance heater 400 of the present teachings, showing the location of the hoisted heater. ! The inside and three sides. In various embodiments, the stacking heater 400 can be secured to the outer casing 1 8 (in the figure, or removably attached to the outer casing. The slamming heater is completely around the bottom of the (four) ι〇2 And a plurality of impedance heating elements 4 〇 2 are included on the side. In the specific embodiment shown in FIG. 6A, the impedance heating elements 4 〇 2 are plural Ρ two open graphite bus bars, the graphite confluence The bar of the bar boulder 2 is supported by the rods. The graphite bars are arranged to be structurally connected together and electrically insulated from the graphite bus bars. The impedance heating elements are 2 may include a serpentine graphite wire positioned between opposite ends of the demon elements to be fed (4) (4): a wide source of 100, a casing 108 of 100 to connect the graphite bus bars to the power supply (not shown) The graphite bus bar bars 402 include screws 406 that securely attach the wires. Fig. 6B is used to heat each of the plurality of faults heaters - the perspective view of the outside (the figure of the figure shown in Fig. 6 is similar to that in Fig. 6A) The display shows the ':: all four sides of the heater. ~, 4, Figure 7A is a side view of a linear deposition source 1 根据 according to the teachings, 18 201118961 is shown to heat the complex conduction channel The conductive channel heater, the drawing page shows a perspective view of the rod 13 包括 including the conductive channel heaters. Figure % illustrates - a perspective view of the linear deposition source 丨 (8) according to the present teachings. - joining the ends of the rods 130 to the coupling members 132 of the body ι 2. Referring to Figures 1A, IB, 7A, 7B, and %, the rods 13 are tied in the longitudinal direction of the body H2 The length along the length of the conductive channels 1〇4 is clamped to the conductive channels 1() 4. The rods i3Q can be formed of any type of high temperature material, such as graphite, carbon cut, fire resistant. Materials, or other materials of very high melting point. The rods 13'' are electrically connected to the output of a power source (not shown) that produces a first-rate current through the rods 13 thereby increasing the rods Temperature of 13G. The rod i3g can be used with a spring or wire bundle that provides sufficient motion. Electrically connected to the output of the power supply to allow thermal expansion of the rods #13() during the operation; in these rods, heat is generated by the heat generated by the current from the 5H power source. The conduction channels 1G4' thereby raise the temperature of the conduction channels 1G4 such that the evaporated source material transported through the "Hyper number conduction path i Q4" does not condense. Figure 7A also shows that each segment rod 3 The plurality of coupling members 132 are attached together. In some embodiments, the length of the body " 2 is so long that the majority of the rods 130 are coupled to the system to be more cost effective and reliable. And easier to manufacture. Those of ordinary skill in the art will appreciate that there is a "small-type light fitting" which can be used to join a plurality of segment rods together. For example, a screw-coupled coupling can be used to connect the two-stage boring bar. The light fitting 132 is provided through the entire length of the rods 13G by 19,118,961 degrees - a continuous electrical connection having a relatively constant impedance. Figure 8 illustrates a frame 500 (Figure 1) of a moon body 112 that includes a telescoping rod 502. Referring to Figures 1A, 1R, 7A „ ^ B 7A, and 8, the plurality of conductive channels 104 are removed from the space inside the body 50 1 of the body 1 1 2 and ▲ Rod 502. The telescoping; ???, 502 is sometimes used because the body 112 undergoes significant thermal expansion and contraction during normal operation. The thermal expansion coefficients of the rods 130 and the plurality of conductive passages 1 可 4 may be The thermal expansion coefficient of the rack and other components in the body 112 is significantly different. In addition, the rack 500 and other components in the Xuantai type, such as the stem U0 and the plurality of conductive passages There may be a significant temperature difference between 1 and 4 such that it is intended to cause the frame 500 to extend from the component in the body 2, such as the plurality of conductive channels 1〇4 and the rods (10). ' and shrinkage. The telescopic kneading λ λ and zhong 衿 500 series shown in Fig. 8 can be used in the frame: ... the specific embodiment shown in Fig. 8 to the frame 5. = two 504 or other types of fastener attachment knot section _ extended, one borrowed two;: retracted rod 502 is extended Thereby, a space for the components in the body 112 is established in the rack_, and the components in the body 112 are at a faster rate than the body. Another option is that when the ...:: piece is shrinking faster than the frame 500, the ", 506 fold" is thereby reduced to the machine: the space of the contracting body U2. Fig. 9 is a cross-sectional perspective view of the plurality of snails 20 201118961 102 (Figs. 1A and 1B) for a linear deposition source according to the present teachings and a heat shield for the plurality of conduction channels 1-4. Figure 9B is a complete perspective view of the heat shield 6 〇〇 shown in Figure 9A. Those of ordinary skill in the art will appreciate that the heat shield 600 can be made from any of a wide variety of insulating materials. For example, in the specific embodiment, the heat insulation & is formed of a carbon fiber carbon composite material. Figure 9C illustrates a corner cross-sectional view of a particular embodiment of a heat shield 65 根据 in accordance with the present invention. Only the top and one side surfaces are shown in Figure 9c to more easily illustrate the various layers in the heat shield 650. In some embodiments, the outer layer 650 on the top and bottom surfaces and the side surfaces are in various embodiments, and the outer layer 652 can be hard and durable. And can have a relatively high-order corrosion protection. - a reflective material may be deposited on the outer surface of at least some of the outer layers 652 to improve the thermal properties of the heat shield 65. In a particular embodiment, the outer layer 652 is a carbon fiber board. For example, the outer layer 652 can be a carbon fiber sheet having a thickness that is in the range of (10) ^ 0.08 inches. In some embodiments, the carbon fiber is coated on at least a surface with a conductive material, such as a metal carbon, and the heat shield 650 is also on the top and bottom surfaces and the side surfaces. A plurality of heat resistant material layers 654 are included. In some embodiments, the thermal material layer 654 can be a heat resistant tile. For example, there may be more than five, more than ten, or more than two (four) layers of thermal material 654 positioned on the bottom, and/or side surfaces of the heat shield (4). In some embodiments: Example 21 201118961, at least a portion of the plurality of heat resistant material layers 654 have a thickness in the range of from 吋 1 吋 to 0.020 吋 thick. In some embodiments, a reflective material is clamped onto at least one outer surface of at least one of the layers 650 of heat resistant material layers. In some embodiments, the layer of heat resistant material 654 is one of various types of refractory metal foil layers. Also in some embodiments t, the layers of heat resistant material are layers of graphite material. A very wide variety of layers of graphite material can be used. For example, the layers of graphite material can be formed from Graf〇il or any other type of elastic graphite material. The elastic graphite material is made from pure, natural graphite flakes. The Grafoil system is well suited for use as an insulating sheet because it is resistant to heat, fire, corrosion and chemicals. In some embodiments, the heat shield 65 includes a rigid material 656 positioned between a portion of the plurality of heat resistant material layers 654. The stiff material 656 is typically thicker than the layers of heat resistant material 654. The hard material 656 provides mechanical strength and corrosion protection to the heat shield. A very wide variety of materials are used which may be the same or different from the hard material positioned on the plurality of heat resistant material layers 654 < at least one & outer surface. For example, the hard material can be one of many types of carbon fiber sheets, such as a carbon fiber cloth having a carbon matrix, which is generally referred to as CFC or slave in the work - in the embodiment, the carbon fiber sheet has - Thickness in the range of 〇〇2 and 〇·08忖. In some embodiments, the carbon's cut-off plate is (at) at least - surface--conductive material, such as a metal slain. In addition, the hard material may be a non-fiber reinforced graphite 22 201118961. Thus, in each (four) body embodiment, the hard materials 652, 656 may be clamped outside the heat resistant material layer 654 and/or For example, in a particular embodiment, the thermal insulation 65° includes top and bottom surfaces including the following layers: (1) at least one layer of a hard material coated with a refractory pottery material, such as One or two layers coated with carbonized sharp carbon fiber sheets or similar materials; (2) multiple refractory metal foils and/or stone black layers 'such as 2-20 refractory metal box sheets and/or graphite layers; (3) hard Material: at least - layer 'such as '- or two-layer carbon fiber board; (4) a plurality of refractory metal foil and / or graphite layer 'such as ' 2 2 〇 refractory metal foil and / or graphite layer, and (5) At least one layer of a hard material coated with a refractory ceramic material is, for example, or coated with a carbonized sharp carbon fiber sheet or the like. Referring to Figures IB, IB, 9A-9C, a first section 6〇2 of the heat shield 600 is positioned next to each of the plurality of turns 102 to provide at least partial thermal isolation of each of the plurality of turns 102 . The first section 602 of the heat shield 6 隔热 insulates the individual 坩埚1〇2 such that, if desired, significantly different temperatures can be maintained during processing. For some deposition processes, it is important to maintain significantly different temperatures because each of the plurality of crucibles 102 can then be heated to its optimum temperature for the particular deposition source material. Heating the crucibles 102 to their optimum temperature for the particular deposition source material reduces negative heating effects, such as sputtering of deposited materials. Moreover, heating the 坩埚1〇2 to its optimum temperature for the particular deposition source material can significantly reduce the operating cost of the deposition source. In various other embodiments, the first section 602 of the heat shield 600 includes a plurality of separate heat shields, wherein the plurality of separate heat shields 6 〇〇 23 2011 18961 are surrounded by individual heat shields.丨02 individual 坩埚. Each of the plurality of discrete insulation panels 600 can be the same or can be a different insulation panel. For example, the crucible used to heat the higher temperature deposition source material may be formed of different or thicker insulating materials having different thermal properties. The second section 6〇4 of the heat shield 600 is positioned next to the plurality of conductive channels 104 to provide at least partial thermal isolation of the plurality of conductive channels 1〇4 from the plurality of turns 102. Each of the plurality of conductive channels 1〇4 can be insulated by a separate insulating panel, or a single insulating panel can be used. In some embodiments, the second section 6〇4 of the heat shield 6 is positioned to provide local thermal isolation of at least one of the plurality of conductive channels 104 relative to at least one other of the conductive channels. In other words, the design and positioning of the second section 604 of the insulating panel 6 can be selected to allow for different operating temperatures of at least one of the plurality of conductive channels relative to at least one other of the plurality of conductive channels 1〇4. . In these embodiments, at least two of the plurality of conductive channels ι4 can be thermally insulated by an insulating material having a thermal property of + $. For example, at least two of the plurality of conductive channels of the plurality of conductive channels 1〇4 can be insulated by different insulating materials, different insulating sheets, and different proximity of the insulating materials to the particular conductive channels. The insulation panel 600 is exposed to very high temperatures during normal operation. Some of the heat shields according to the present teachings are formed with at least one surface formed by a low emissivity material or having a low emissivity coating that reduces the emission of heat radiation. For example, the interior or exterior surface of the insulation & 6 can be coated with a low emissivity coating that reduces heat transfer or any other type of coating. Any such coating is typically designed to maintain a constant emissivity throughout the life of the linear deposition source. In comparison with the casing 810 and the body 丨i 2 and in comparison with the components of the casing 丨〇 8 and the body U2, the heat shield 600 is also deflated and contracted at different rates. In a specific embodiment, the thermal insulation & _ is movably attached to at least one of the outer &2&8; and the frame 5' (Fig. δ) At least one movement relative to the outer casing 108 and the frame 500 during normal operation. In some embodiments, the telescoping rod is configured to allow the heat shield 600 to extend and contract relative to other source components. Further, in some embodiments, the thermal barrier 600 includes a plurality of layers of insulating material that are resistant to thermal expansion and contraction. For example, a plurality of insulated magnetic monuments can be used to increase resistance to thermal expansion and contraction. Figure 10 illustrates a perspective top view of a deposition source 100 in accordance with the present teachings showing the body 112 for evaporating material onto a substrate or other workpiece. The input of each of the plurality of nozzles 106 is coupled to the output of the individual conduction channels of the plurality of conduction channels 1G4, as described with respect to FIG. 5A or coupled to the output of the conduction channels 1〇4, such as About the person described in the figure. In the embodiment shown in FIG. 5A, the deposited materials of the Luofa are transported by the plurality of conductive channels 104 to the plurality of nozzles 1〇6 without intermixing. The evaporated deposition material is ejected by the plurality of nozzles 106 to form a deposition flux. The linear deposition source 100 shown in the figure illustrates seven groups of nozzles 106 where each group includes three nozzles. Those of ordinary skill in the art will appreciate that deposition sources according to the present teachings can include any number of nozzle groups and any number of nozzles within each group. In various embodiments, the distance between the plurality of nozzles 106 may be uniform or uneven. One aspect of the teachings is that the plurality of nozzles 106 can be unevenly spaced to achieve certain process objectives. For example, in a particular embodiment, the spacing between the plurality of nozzles 106 is selected to improve the uniformity of the deposition flux. In this embodiment, the spacing of the nozzles 106 near the edge of the body 112 is closer than the spacing of the nozzles 106 to the center of the body U2, as shown in FIG. 10, to compensate for the proximity. Reduced deposition flux at the edge of the body Π2. The correct spacing can be selected such that the linear deposition source 100 is immediately adjacent to the substrate or workpiece to produce a substantially uniform deposition material flux. In some embodiments, the plurality of nozzles! The spacing between 〇6 is selected to achieve high material utilization in order to reduce the operating cost of the deposition source and increase the effectiveness of the process time and service interval. Also in some embodiments, the spacing of the plurality of nozzles 106 is selected to provide an overlap of desired deposition fluxes by the plurality of nozzles 106 to achieve a predetermined mixing of the evaporated material. In one embodiment, at least one of the plurality of nozzles 1 〇 6 is positioned at an angle from the top surface 16 of the conductive channels 104 at an angle relative to the normal angle to achieve certain processes. . For example, in the second embodiment, at least one of the plurality of nozzles 1 〇 6 is positioned at an angle from the top of the conduction pass if 1G4 from 16 () to the angle of the normal angle ' The angle is selected to provide a uniform deposition flux across the surface of the substrate or work to be treated. Also in some embodiments, at least one of the plurality of nozzles 1〇6 is positioned by the conductive channel two

26 201118961 之頂部表面160之如姐 M C2 , _ .. ^ +該法線角度的一角度,該角度被選 擇’以由§玄複數嘴嘴 06提供—想要之沉積通量的重疊, 以達成被蒸發材料的—預定混合。 圖11A說明根據本教示之沉積源100的本體112之一 橫截面視圖,其顧子丨、,焚^ 7 、g子17〇搞接至傳導通道1 〇4的一 行喷嘴1〇6,該管子控制沉積材料至該複數喷嘴1〇6之流 ,。該等管子170被定位f接至該傳導通道1()4,以致該等 :子170限制被供給至該喷冑1〇6的沉積材料之量。該等 管子170被至少局部地定位進入該傳導通道1〇4。該等管子 之長度能被選擇,以經過該喷嘴1Q6達成—預定的沉積 通量。對應於該複數噴嘴1〇6之一的管+ 17〇之長度可為 與對應於該複數喷嘴106之至少另一個的管子之長度不 同:於-些具體實施例中’在該等管+ m之頂部的放射 率係低於在該等管+ 17G之底部的放射率以提供一想要 之熱梯度。 一些或所有該等喷嘴106之幾何形狀能被選擇,以改 善均句性。譬如,該複數㈣1〇6之至少一個能包括一輸 出孔口,設計該輸出孔口之形狀,以使一不均句的沉積通 量通過。對應於該複數喷嘴106之一的管子17〇之幾何形 狀可為與對應於該複數喷嘴106之至少另一個的管子17〇 之幾何形狀不同。26 201118961 The top surface 160 of the sister M C2, _ .. ^ + the angle of the normal angle, the angle is selected 'to provide by the § Xuan plural mouthpiece 06 - the desired deposition flux overlap, to A predetermined mixing of the evaporated material is achieved. Figure 11A illustrates a cross-sectional view of one of the bodies 112 of the deposition source 100 in accordance with the present teachings, with a row of nozzles 1 〇 6 connected to the conduction channel 1 〇 4, which are connected to the slabs Controlling the flow of deposited material to the plurality of nozzles 1〇6. The tubes 170 are positioned f to the conductive channel 1 () 4 such that the sub-170 limits the amount of deposition material supplied to the squirt 1 〇 6. The tubes 170 are positioned at least partially into the conductive channel 1〇4. The length of the tubes can be selected to achieve a predetermined deposition flux through the nozzle 1Q6. The length of the tube + 17 对应 corresponding to one of the plurality of nozzles 1 〇 6 may be different from the length of the tube corresponding to at least one other of the plurality of nozzles 106: in the particular embodiment 'in the tubes + m The emissivity at the top is lower than the emissivity at the bottom of the tubes + 17G to provide a desired thermal gradient. The geometry of some or all of these nozzles 106 can be selected to improve the homography. For example, at least one of the plurality (4) 1 〇 6 can include an output aperture, the shape of the output aperture being designed to pass a deposition flux of an uneven sentence. The geometry of the tube 17A corresponding to one of the plurality of nozzles 106 may be different from the geometry of the tube 17A corresponding to at least one other of the plurality of nozzles 106.

1複數噴嘴106之間距可為不均句的,以達成某些製 程目標。譬如’該複數喷嘴1〇6的-間距可為此緊接至該 本體112之中心的複數喷嘴1〇6之間距較接近緊接至該I 27 201118961 體112之邊緣。該複數喷嘴i06之一間距能被選擇,以達 成大體上均勻之沉積材料通量的由該複數喷嘴1〇6之射 出。該複數噴嘴106的一間距亦能被選擇,以增加沉積材 料之利用率。該複數喷嘴1〇6的一間距亦能被選擇,以提 供由該複數噴嘴1〇6所射出之沉積通量的一想要之重疊。 該等管子170之尺寸 '諸如該等管子17〇之長度及直 徑決定被由該傳導通道1〇4供給至該等對應喷嘴的沉 積材料之數量。此外,該等管子17G之定位、諸如該等管 子1 7〇被定位在該傳導通道1〇4中之距離亦決定被由該傳 導通道104供給至該等對應噴嘴1〇6的沉積材料之量。 譬如,改變該等管子170之直徑將改變由該喷嘴1〇6 所發出之沉積通量型式。該等管+ m之長度大致上被選 擇,以匹配該等管+ 17〇之整個流動阻抗及設計。於—些 =實施例中,進—步貫穿進人該傳導通冑⑽之較長: s子1 70將供給更少之蒸發沉積材料至該對應喷嘴1 〇6。於 各種具體實施例中,特別管+ Π0之幾何形狀及位置可為 相同^可,不同的。於—具體實施例中,該複數管子17〇 之至^一官子可具有不同的長度及/或不同的幾何形狀, 以便經過該複數17Q之每—個獲得—特狀傳導,並 達成某些製程目標。譬如,由靠近該密封凸緣ιι〇之本體 11 2至忒本體i丨2之端部,具有不同尺寸之管子1 能被使 用於補償該線性沉積源丨〇〇中之壓力差額。 如此,本教不之沉積源丨〇〇的一特色係該等管子i 7〇 之歲何形狀及定位能被選擇,以精確地控制被供給至該複 28 ③ 201118961 數喷嘴106之每一個的 複數喷嘴科量’而不會改變由該 之蒸發材料的分配。譬如,特別管子 170之成何形狀及 s 丁 石承ό姑 破選擇,以達成某些製程目標,諸 如來自特別之噴嘴或 量。 萬次來自該複數喷嘴106的一預定沉積通 於—些具體實施例中,該複數噴嘴106之至少-個延 伸㈣傳導通it 1G4之頂部表面上方,以便防止隨著時間 …的蒸氣冷凝及材料累積增大。喷嘴亦可被定位,以 達成所需之沉積通量分佈圖案。個別之喷嘴加熱器能被定 位緊接至《複數㈣1〇6之__或多個,以控制由該等喷嘴 106所發出之蒸發材料的溫纟1G6,以防止冷凝及材料累 積。於其他具體實施例中,該複數喷f 1G6之至少-個被 定位在該複數傳導通道1Q4之頂部表自16QT方,以便由 該加熱器及該複數傳導通道1〇4冑導該想要之熱量及/或 達成一想要之沉積通量分佈圖案。 圖11B說明根據本教示之沉積源1〇〇的複數傳導通道 104 <杈截面視圖,其顯示以管子i 7〇耦接至該複數傳導通 道104的一排噴嘴1〇6,該等管子控制沉積材料至該等噴嘴 104之流動。圖1丨B顯示具有管子之三個傳導通道。於各種 具體實施例中,該等管子能具有不同的長度,如圖11B中 所顯示。本教示的一態樣係該等噴嘴1〇6被該等傳導通道 加熱器(於圖7A-C中之桿棒130)及藉由該相關聯的傳導通 道104所加熱。 圖12說明一嘴嘴1〇6的透視圖,其包括用於根據本教 29 201118961 示之線性沉積源、10…01的該複數噴嘴之-。於-此且 體實施例中’該喷冑106包括—錐形外表面及/或—錐形 内表面,以提供一用於該被蒸發材料之想要的熱斜度。該 噴嘴106被設計,站甘切Μ # 以致其k供戎所需之熱傳導,以防止該 被蒸發之沉積源材料冷凝。 該複數喷嘴106之至少一個可為由某些材料所形成, 且能包括某些塗層’以改善性能。譬如,該喷f⑽能由 具有-熱傳導性之材料所形成,該熱傳導性導致大體上均 勻之刼作溫度’這將減少來自該噴嘴之沉積材料的濺射。 譬如’該喷嘴_可為由石墨、石炭化石夕、财火材料、或其 他很南熔點之材料所形成。於-些具體實施例中,該喷嘴 106被設計,以減少藉由通過該噴嘴1〇6的材料所遭受之熱 斜度。此外’該噴嘴1 06能祐却 4 6⑽Μ ’以使全部輻射損失減 至最小。該喷嘴.106能在至少— 率塗層。 卜4表面上包括-低放射 該喷嘴1〇6包括一用以使來自該相關聯傳導通道104 之被蒸發的沉積源材料通過之孔口 18〇。該複數喷嘴之至少 IS輸出孔”80可相對一法線角度在-角度被定位至 、叫之頂。ρ表面上,如關於圖1〇所敛述者。於 -些具體實施例中,該孔口 180之表面具有一減少埶放射 之低放射率塗層,藉此減少該喷嘴106中之任何冷凝。 該孔口180被設計,以射出一想要之蒸發材料柱。一 大致上圓形之孔口 108被顯示在圖12的喷嘴咖中。然而, 應了解極多孔口形狀夕紅打 , 、 t狀之任何一個可被使用在該喷嘴106 30 201118961 中’以達成該想要之處理目標。譬如該孔口 18〇可為圓 形、橢圓形、長方形、正方形、或一裂口。此外,該孔口 180之出口被顯不為具有一半徑形狀。然而,應了解該孔口 1 8 0可使用極多出口形壯夕乂工y 心狀之任何一個,以達成該想要之處理 目標。譬如’該出口形狀可為被削角的、呈半徑或相撲樣 式(亦即受限制的噴嘴形狀之逆勾配或另一型式)。 於-些具體實施例中’該複數噴嘴1〇6之至少一個呈 有-扎口⑽,設計該孔口 180之形狀,以使一不均句的沉 積通量通過。於這也且艚眚故么,占 體貫施例中,可設計至少部份該複 數孔口 1 8 0之形狀,η你丁 & h 均勻的沉積通量通過,該沉積 通量組合以成一相夕、、2L Θ ‘ /積通罝圖案。譬如,該想要之 組合沉積通量圖案可為遍及一 ’ 預疋區域之均勻的沉積通量 圖案。 在細作中’-由多複沉積源產生沉積通量之方法 加熱複數坩堝102,每一個袖m壯 母個坩堝裝盛一沉積源材料,以致該 複數i甘禍1 〇 2之每—個节欲„ 蒸發沉積材料。該方法可包括獨立 地控制分開之坩堝加熱器,以 夕X m λα i 、 連成用於母一個沉積源材料 一 5堝’皿度。该方法亦可包括防護該複數坩堝102 之母-個,以致在特別㈣中可維持不同的溫度。 來自該複數掛網1 02之卷细 太妒^ + 之母一個的沉積材料運送經過該 本體⑴中之傳導通道104、於包括 广 呈體眘丨i -h 寻导通道104之 八體實施例中’來自該複數 =經過一中之個別傳導通道: 自该複數坩堝102的任何 -來 入货/儿積材料。該等傳 31 201118961 導通道104被加熱 嘴106發出之前不會冷凝。該等傳導通道丨〇4能被分開地 加熱,以便對於該複數傳導通道丨04之至少二個達成不同 的溫度。該複數傳導通道104之每一個能被防護,以致可 在不同傳導通道104中維持不同的溫度。很多方法包括提 t、用於加熱器及緊接至該複數坩堝1 〇2及緊接至該複數傳 導通道1 04之隔熱材料的熱膨脹之可運動零組件及空間。 蒸發沉積材料係由該傳導通道1〇4,或由該複數傳導通 道104之每一個運送至該複數喷嘴1〇6之個別喷嘴。於各 種具體實施例中,該被蒸發之沉積材料係經過複數管子17〇 之個別管子或其它控制該沉積材料之流動的結構,由該傳 導通道HM,或由該複數傳導通道1〇4之每—個運送至心 數喷嘴106之個別喷嘴。 °夏 ㈣示之方法的各種具體實施例中,該沉積材料經 =:管子、及,或該管子人口相對該傳導通道1; 位置所控制〇与"且# J,\L 之 …… 幾何形狀、及/或該管子入口相# Γ均勺通4 104之位置被選擇,以達成某些製程噹 如均勾之沉積通量及/或高沉積材料利用率。…# 該複數喷嘴1〇6接著使該被蒸發 此形成一沉積通量。 ' 才料通過,藉 間距,以達成某此製程 擇該複數喷嘴106之 之 均勾的沉積通量及〜諸如來自該複數脅嘴106 觀里及〜沉積材料利用率。 φ 32 201118961 對ζ由j-太 , , …、r μ人之教示係會同各種具體實施例被敘述,其 二w人將申凊人之教示限制於此等具體實施例。反而, ^申明人之教示涵括各種另外的選擇、修改、及同等項, 、t屬技術領域中具有通常知識者所了解的,其可在其中 被製成’而不會由該教示之精神及範圍脫離。 【圖式簡單說明】 按照較佳及示範具體實施例、隨同其進一步優點之本 教示係取自會同所附圖面更特別地敘述在以下之詳細敘述 中。熟諳該技藝者將了解在下面所敛述之圖面係僅只用於 說明之目&。該等圖面係不須按照一定比例,反之大致上 強調說明該教示之原理1等圖面係不欲以任何方式限制 該教示之範圍》 圖1A說明一根據本教示的線性沉積源之橫戴面透視 圖’該線性沉積源包括以線性組構輕接至複數傳導通道且 接著耦接至複數噴嘴之複數坩蜗。 圖1B說明—根據本教示的線性沉積源之橫截面透視 圖,該線性沉積源包括以線性級構耦接至單一傳導通道且 接著耦接至該複數喷嘴之複數时禍。 圖2A說明關於圖1A及iB所从、+·. ^ — β所敘述之線性沉積源的橫 截面視圖,且疋位該複數喷嘴, 从致匕們在一向上之方向 中蒸發沉積材料。 圖2Β說明-根據本教示的線性沉積源之橫戴面透視 圖,且定位該複數喷嘴,以致它們卢 / h們在-往下之方 沉積材料。 拎放 33 201118961 圖 圖 圖 接 圖2C說明一根據本教示的線性沉積源之橫截面透視 ,並使包括該複數喷嘴之本體被定位在一直立方向中。 圖2D說明根據本教示的另一線性沉積源之橫截面透視 ,並使包括該複數喷嘴之本體被定位在一直立方向中。 圖3A說明一根據本教示的線性沉積源之橫截面透視 ,該線性沉積源包括以線性組構耦接至複數傳導通道且 著耦接至複數喷嘴之單一坩堝。 圖3B說日月-根據本教*白勺線性沉積源之料面透視 圖,該線性沉積源包括以線性組構耦接至單—傳導通道且 接著耦接至複數喷嘴之單一坩禍。 :圖4說明-用於本教示之線性沉積源的_之橫截面 透視圖,該坩堝係由二種材料所形成。 圖5 A說明根據本教示之線性沉積源的一部份之透視俯 視圖,該部份線性沉積源顯示耦接至該外殼中之三個坩堝 的三傳導通道。 圖5B說明根據本教示之線性沉積源的一部份之透視俯 視圖,該部份線性沉積源顯示耦接至該外殼中之三個坩堝 的單一傳導通道。 圖6A係用於本教示之線性沉積源的阻抗式坩堝加埶器 之—部份的透視圖,其顯示該加熱器之内側及三側面,在 此該坩堝被定位。 。。圖6B係用於加熱該複數掛禍之每一㈣該複數掛禍加 熱器之一的外面之透視圖。 圖7A係一根據本教示的線性沉積源之側視圖其顯示 34 201118961 用以加熱該複數傳導通道之傳導通道加熱器。 圖7B係一包括該等傳導通道加熱器的桿棒之透視圖。 圖7C說明一根據本教示的線性沉積源之本體的透視 圖,其顯示一將該等桿棒之端部接合至該本體的编接件。 圖8說明該本體之包括一伸縮桿的機架。 圖9 A係一用於該複數掛堝及用於根據本教示的線性沉 積源之該複數傳導通道的隔熱板之橫截面透視圖。 圖9B係圖9A中所顯示之隔熱板的整個透視圖。 圖9 C s兒明根據本發明之隔熱板的一具體實施例之角落 橫截面圖。 圖10說明一根據本教示之沉積源的透視俯視圖,其顯 示該本體中之用以放射蒸發材料至基板或其他工件上的複 數噴嘴。 圖1 1A說明根據本教示的沉積源之本體的一橫截面視 圖其顯示以管子輕接至傳導通道的一行喷嘴,該等管子 控制沉積材料至該等噴嘴之流動。 圖11B說明根據本教示的沉積源之該複數傳導通道的 —橫戴面視圖,其顯示以管子耦接至該複數傳導通道的一 排噴嘴’該等管子控制沉積材料至該等噴嘴之流動。 圖12說明—噴嘴之透視圖,包括用於根據本教示之線 性沉積源的該複數噴嘴之一。 【主要元件符號說明】 35The distance between the plurality of nozzles 106 can be an uneven sentence to achieve certain process goals. For example, the spacing of the plurality of nozzles 1 〇 6 can be such that the distance between the plurality of nozzles 1 〇 6 immediately adjacent to the center of the body 112 is closer to the edge of the body 112 of the I 27 201118961. The spacing of one of the plurality of nozzles i06 can be selected to achieve a substantially uniform flux of deposited material from the plurality of nozzles 〇6. A spacing of the plurality of nozzles 106 can also be selected to increase the utilization of the deposited material. A spacing of the plurality of nozzles 1 〇 6 can also be selected to provide a desired overlap of the deposition fluxes emanating from the plurality of nozzles 〇6. The dimensions of the tubes 170, such as the length and diameter of the tubes 17, determine the amount of deposition material that is supplied by the conductive passages 1 to 4 to the corresponding nozzles. Furthermore, the positioning of the tubes 17G, such as the distance in which the tubes 17 are positioned in the conductive passages 〇4, also determines the amount of deposition material that is supplied by the conductive passages 104 to the corresponding nozzles 〇6. . For example, changing the diameter of the tubes 170 will change the deposition flux pattern emitted by the nozzles 〇6. The lengths of the tubes + m are chosen to match the overall flow resistance and design of the tubes + 17 。. In the case of the embodiment, the step of passing through the conduction port (10) is longer: s child 1 70 will supply less evaporated deposition material to the corresponding nozzle 1 〇6. In various embodiments, the geometry and position of the particular tube + Π0 can be the same and different. In a specific embodiment, the plurality of tubes 17 may have different lengths and/or different geometries so as to obtain a characteristic conduction through each of the plurality of 17Qs and achieve certain Process target. For example, from the end of the body 11 2 of the sealing flange ι to the end of the body i 丨 2, tubes 1 having different sizes can be used to compensate for the pressure difference in the linear deposition source. Thus, a feature of the teachings of the deposition source is that the shape and positioning of the tubes can be selected to precisely control the supply to each of the plurality of nozzles 106. The number of multiple nozzles does not change the distribution of the evaporating material from it. For example, the shape of the special pipe 170 and the shape of the singer Shi Cheng are broken to achieve certain process objectives, such as from special nozzles or quantities. Ten thousand times a predetermined deposit from the plurality of nozzles 106 is passed through, in some embodiments, at least one of the plurality of nozzles 106 extends (four) above the top surface of the 1G4 to prevent vapor condensation and material over time. Cumulative increase. The nozzles can also be positioned to achieve the desired deposition flux distribution pattern. Individual nozzle heaters can be positioned immediately adjacent to the plural (four) 1〇6 or more to control the temperature of the evaporating material emitted by the nozzles 106 to prevent condensation and material build-up. In other embodiments, at least one of the plurality of jets f 1G6 is positioned at the top of the plurality of conductive channels 1Q4 from the 16QT side to guide the desired by the heater and the plurality of conductive channels 1〇6 Heat and/or achieve a desired deposition flux distribution pattern. Figure 11B illustrates a plurality of conductive channels 104 <杈 cross-sectional views of a deposition source 1 根据 according to the present teachings, showing a row of nozzles 1 〇 6 coupled to the plurality of conductive channels 104 by a tube i 7 ,, the tube controls The flow of material to the nozzles 104 is deposited. Figure 1B shows three conductive channels with tubes. In various embodiments, the tubes can have different lengths, as shown in Figure 11B. One aspect of the teachings is that the nozzles 1〇6 are heated by the conductive channel heaters (rods 130 in Figures 7A-C) and by the associated conductive channels 104. Figure 12 illustrates a perspective view of a mouthpiece 1 〇 6 comprising - a plurality of nozzles for a linear deposition source, 10...01 as shown in the teachings of the Chinese Patent No. 29 201118961. In this embodiment, the squirt 106 includes a tapered outer surface and/or a tapered inner surface to provide a desired thermal slope for the material being evaporated. The nozzle 106 is designed to maintain the heat transfer required for its supply to prevent condensation of the evaporated deposition source material. At least one of the plurality of nozzles 106 can be formed from certain materials and can include certain coatings to improve performance. For example, the spray f(10) can be formed from a material having a thermal conductivity that results in a substantially uniform temperature of the coating, which will reduce sputtering of the deposited material from the nozzle. For example, the nozzle may be formed of graphite, charcoal fossils, fossil materials, or other materials having a very melting point. In some embodiments, the nozzle 106 is designed to reduce the thermal slope experienced by the material passing through the nozzle 1〇6. In addition, the nozzle 106 can protect 4 6 (10) Μ ' to minimize total radiation loss. The nozzle .106 can be coated at least at a rate. The surface of the wafer 4 includes - low emission. The nozzle 1 〇 6 includes an aperture 18 for passing the evaporated deposition source material from the associated conductive channel 104. At least the IS output aperture 80 of the plurality of nozzles can be positioned at an angle to the top relative to a normal angle. The surface of the ρ is as recited with respect to FIG. 1A. In some embodiments, The surface of the orifice 180 has a low emissivity coating that reduces krypton radiation, thereby reducing any condensation in the nozzle 106. The orifice 180 is designed to eject a desired column of evaporative material. The orifice 108 is shown in the nozzle coffee of Fig. 12. However, it should be understood that any one of the extremely porous shape shapes, t-shape can be used in the nozzle 106 30 201118961 to achieve the desired treatment. For example, the orifice 18 can be circular, elliptical, rectangular, square, or a slit. Further, the outlet of the orifice 180 is not shown to have a radius shape. However, it should be understood that the orifice 18 0 can use any of the many exits to form any one of the heart shapes to achieve the desired processing target. For example, the exit shape can be chamfered, radiused or sumo style (ie restricted) Reverse matching of nozzle shape or another type) In some embodiments, at least one of the plurality of nozzles 1〇6 has a tab (10), and the shape of the orifice 180 is designed to pass a deposition flux of an uneven sentence. Therefore, in the embodiment of the body, at least a part of the shape of the plurality of apertures can be designed, and a uniform deposition flux of η 丁 & h is passed, and the deposition flux is combined to form a phase, 2L Θ ' / 罝 罝 罝 pattern. For example, the desired combination deposition flux pattern can be a uniform deposition flux pattern throughout a 'pre-turn region. The method heats the plurality of 坩埚102, each of the sleeves of the mother and the armor holds a deposition source material, so that the plurality of sacred sacs 1 〇 2 each of the abstinence „ evaporation deposition material. The method can include independently controlling the separate helium heaters, at a time X m λα i , for a parent deposition source material. The method may also include protecting the mother of the plurality of turns 102 such that different temperatures are maintained in the special (d). The deposition material from the parent of the plurality of nets 1200 is transported through the conductive channel 104 in the body (1), and the eight-body embodiment including the wide-body 丨i-h seek channel 104 'From the complex number = individual conduction channels through one: from any of the plural 坩埚 102 - incoming goods / erection material. The pass 31 201118961 is not condensed until the nozzle 106 is illuminated. The conductive channels 丨〇4 can be heated separately to achieve different temperatures for at least two of the plurality of conductive channels 丨04. Each of the plurality of conductive channels 104 can be shielded such that different temperatures can be maintained in different conductive channels 104. A number of methods include lifting, a movable component and space for the heater and thermal expansion of the plurality of thermal insulation materials immediately adjacent to the plurality of 坩埚1 〇2 and immediately adjacent to the plurality of conductive channels 104. The evaporative deposition material is transported by the conductive channel 1〇4 or by each of the plurality of conductive channels 104 to individual nozzles of the plurality of nozzles 1〇6. In various embodiments, the evaporated deposition material is passed through a plurality of tubes 17 or other structures that control the flow of the deposition material, from the conduction channel HM, or from each of the plurality of conduction channels 1〇4 An individual nozzle that is transported to the heart number nozzle 106. In various embodiments of the method shown in summer (d), the deposited material is =: tube, and, or the tube population is opposite to the conduction channel 1; the position is controlled by " and # J, \L... The shape, and/or the position of the inlet phase of the tube, is selected to achieve a deposition flux and/or a high deposition material utilization rate for certain processes. ...# The plurality of nozzles 1〇6 then cause the evaporation to form a deposition flux. 'Before, by the spacing, to achieve a certain process, the deposition flux of the multiple nozzles 106 is selected and ~ such as from the complex nozzles 106 and ~ deposition material utilization. φ 32 201118961 The teachings of the j-to, , ..., r μ persons are described in conjunction with various specific embodiments, and the teachings of the applicants are limited to the specific embodiments. Instead, the affirmation of the person's teachings encompasses a variety of alternatives, modifications, and equivalents, which are known to those of ordinary skill in the art world, where they can be made without 'the spirit of the teachings' And the scope is separated. BRIEF DESCRIPTION OF THE DRAWINGS The teachings of the present invention are described in more detail in the following detailed description of the preferred embodiments. Those skilled in the art will appreciate that the drawings referred to below are for illustrative purposes only. The drawings are not necessarily to scale, but rather generally emphasize that the principles of the teachings are not intended to limit the scope of the teaching in any way. Figure 1A illustrates a transverse deposition source according to the present teachings. The surface perspective view 'The linear deposition source includes a plurality of worms that are lightly coupled to the plurality of conduction channels in a linear configuration and then coupled to the plurality of nozzles. 1B illustrates a cross-sectional perspective view of a linear deposition source including a plurality of discrete phases coupled to a single conductive channel and then coupled to the plurality of nozzles in accordance with the present teachings. Figure 2A illustrates a cross-sectional view of the linear deposition source as described with respect to Figures 1A and iB, and clamps the complex nozzles to evaporate the deposited material in an upward direction. Figure 2A illustrates a cross-sectional perspective view of a linear deposition source in accordance with the present teachings, and the plurality of nozzles are positioned such that they deposit material on-down. 33 33 201118961 图 图 图 Figure 2C illustrates a cross-sectional perspective of a linear deposition source in accordance with the present teachings, and the body including the plurality of nozzles is positioned in an upright orientation. 2D illustrates a cross-sectional perspective of another linear deposition source in accordance with the present teachings, and the body including the plurality of nozzles is positioned in an upright orientation. 3A illustrates a cross-sectional perspective view of a linear deposition source including a single unit coupled in a linear configuration to a plurality of conduction channels and coupled to a plurality of nozzles in accordance with the present teachings. Fig. 3B shows a perspective view of a surface of a linear deposition source according to the teachings of the present invention. The linear deposition source includes a single defect that is coupled to the single-conducting channel in a linear configuration and then coupled to the complex nozzle. Figure 4 illustrates a cross-sectional perspective view of a linear deposition source for use in the teachings of the present invention, which is formed from two materials. Figure 5A illustrates a perspective top view of a portion of a linear deposition source in accordance with the present teachings showing three conductive channels coupled to three turns in the housing. Figure 5B illustrates a perspective top view of a portion of a linear deposition source in accordance with the present teachings showing a single conduction channel coupled to three turns in the housing. Figure 6A is a perspective view of a portion of an impedance type damper for a linear deposition source of the present teaching, showing the inside and three sides of the heater where the crucible is positioned. . . Fig. 6B is a perspective view of the outside of one of the plurality of smashing heaters for heating each of the plurality of catastrophes. Figure 7A is a side elevational view of a linear deposition source in accordance with the teachings of the present invention. 34 201118961 A conductive channel heater for heating the plurality of conductive channels. Figure 7B is a perspective view of a rod including the conductive channel heaters. Figure 7C illustrates a perspective view of a body of a linear deposition source in accordance with the present teachings showing a splicing of the ends of the bars to the body. Figure 8 illustrates a frame of the body including a telescoping rod. Figure 9A is a cross-sectional perspective view of a heat shield for the plurality of hooks and the plurality of conductive channels for a linear deposition source in accordance with the present teachings. Figure 9B is an overall perspective view of the heat shield shown in Figure 9A. Fig. 9 is a perspective cross-sectional view showing a specific embodiment of the heat shield according to the present invention. Figure 10 illustrates a perspective top view of a deposition source in accordance with the present teachings showing multiple nozzles in the body for evaporating material onto a substrate or other workpiece. 1A illustrates a cross-sectional view of a body of a deposition source in accordance with the present teachings showing a row of nozzles that are lightly coupled to a conductive passageway that controls the flow of deposited material to the nozzles. Figure 11B illustrates a cross-sectional view of the plurality of conductive channels of a deposition source in accordance with the present teachings, showing a row of nozzles coupled to the plurality of conductive channels by tubes. The tubes control the flow of deposited material to the nozzles. Figure 12 illustrates a perspective view of a nozzle including one of the plurality of nozzles for a linear deposition source in accordance with the present teachings. [Main component symbol description] 35

Claims (1)

201118961 七、申請專利範圍·· 1. 一種沉積源,包括: a) 一坩堝,用以裝盛沉積材料; b) 本體,包括一傳導通道,該傳導通道之輪入被耦接 至S亥i#竭之輪出; C) 一加熱器,其被定位成與該坩堝及該傳導通道熱相 通,該加熱器加熱該坩堝,以致該坩堝將該沉積材料蒸發 進入該傳導通道; … d)一隔熱板,其被定位圍繞該加熱器及該本體之至少其 t 一個’該隔熱板包括複數耐熱材料層;及 .Ο複數喷嘴,該複數喷嘴之每-個的輸人係執接至該傳 導通道之輸出,以致被蒸發之沉積材料係由該坩堝經過嗜 傳導通道運送至該複數喷嘴,在此該被蒸發之沉積材料: 由該複數喷嘴射出,以形成一沉積通量。 ’、 2·如申請專利範圍第丨項之沉積源,其中該隔熱板另包 括定位在該複數耐熱材料層之至少其中—層的表面上之 硬的材料。 2項之沉積源,其中該堅硬的材料 3.如申請專利範圍第 提供腐蝕防護。 4.如申請專利範圍第2項之沉積源,其中該堅硬的材料 包括碳纖維板》 5 ·如申請專利範圍第4項之沉積源,其中該碳纖維板係 在至少一表面上塗覆以金屬碳化物。 6 ·如申請專利範圍第4項之沉積源’其中該碳纖維板具 36 201118961 有一在0.02及〇 Πδ上广 久ϋ·〇8吋厚的範圍中之厚度。 申巧專利範圍第2項之沉積源,豆中該堅硬的材料 被定:„數耐熱材料層之至少一層的、外部表面上。 申β專利範圍第2項之沉積源,其中該堅硬的材料 被定位在該複數耐熱材料層的其中二層之間。 申明專利範圍第1項之沉積源,另包括定位在該隔 熱板的至少—外部表面上之反射材料。 二.如申請專利範圍第1項之沉積源,其中該隔熱板另 。括疋位在该複數耐熱材料層的頂部表面上之第—堅硬的 材料及疋位纟該複數耐熱材料層的底部表面上之第二堅 硬的材料。 U·如申請專利範圍第1〇項之沉積源,其中該第一及第 二堅硬的材料之至少其中之一包括碳纖維板。 一 12.如申睛專利範圍帛10項之沉積源,*中該第一及第 一堅硬的材料之至少一外部表面被塗覆以金屬碳化物。 ,13·如申请專利範圍第1項之沉積源,其中至少部份該 複數耐熱材料層具有在㈣w及U則厚的關 度。 其中該複數耐熱 其中該複數耐熱 其中該等耐熱材 14.如申請專利範圍帛1項之沉積源 材料層包括超過5層之石墨材料。 15·如申請專利範圍帛1項之沉積源 材料層包括超過10層之石墨材料。 16·如申請專利範圍第丨項之沉積源 料層ώ括至少一耐火金屬箔片。 37 201118961 1 7·如申請專利範圍第丨項之沉積源,其中該等耐熱材 料層包括至少一石墨材料層。 18.如申請專利範圍第丨項之沉積源,其中該複數噴嘴 之至少其中二個包括一限制被供給至其對應噴嘴的材料之 量的管子’對應於該複數噴嘴之一的管子之長度係與對應 於S玄複數喷嗔之至少另一個的管子之長度不同。 1 9. 一種沉積源,包括: a) —坩堝,用以裝盛沉積材料; b) —本體,包括複數傳導通道,該複數傳導通道之輪入 被耦接至該坩堝之輸出; c) 一加熱器,其被定位成與該坩堝及該複數傳導通道熱 相通,該加熱器加熱該坩堝,以致該坩堝將該沉積材料蒸 發進入該複數傳導通道; d) —隔熱板,其被定位圍繞該加熱器及該本體之至少其 中之一 ’該隔熱板包括複數耐熱材料層;及 e) 複數喷嘴,該複數喷嘴之每一個的輸入係耦接至該複 數傳導通道之-的輸出,以致被蒸發之沉積材料係由該掛 禍經過該複數傳導通道運送至該複數喷嘴,在此該被蒸發 之沉積材料係由該複數喷嘴射出,以形成—沉積通量。 20.如申請專利範圍第丨9項之沉積源,其中定位環繞著 該:熱器及該本體之隔熱板具有許多接近該複數傳導通道 專導通道的耐熱材料層,該等耐熱材料層係與許多接 近該複數傳導通道之另—傳導通道料熱材料層不同。 .21·如申凊專利範圍第19項之沉積源,其中該隔熱板另 38 201118961 包括定位在該複數耐熱材料層之至少一層的表面上之堅硬 的材料。 22’如申明專利範圍第2丨項之沉積源,其中該堅硬的材 料包括碳纖維板。 ^ 23.如申請專利範圍第22項之沉積源,其中該碳纖維板 係在至少一表面上塗覆以金屬碳化物。 24.如申請專利範圍第21項之沉積源,其中該堅硬的材 料被定位在該複數耐熱材料層之至少—層的外部表面上。 2 5 .如申請專利範圍第2丨項之沉積源,其中該堅硬的材 枓被定位在該複數耐熱材料層的其中二層之間。 :6.如申請專利範圍第19項之沉積源,另包括定位在該 隔熱板的至少一外部表面上之反射材料。 27·如申請專利範圍第19項之 ^ Μ ^ 積源,其中該隔熱板另 匕栝疋位在該複數耐熱材 UM ^ Μ ^ #表面上之第一堅硬的 弋位在該複數耐熱材料層$ 硬的材料。 I衣曲上之第一堅 28‘如申請專利範圍第19項之沉稽 之至少复士 L積/原,其中該複數喷嘴 至.^其中二個包括一限制被供給 量的管子,對應於該複數喷嘴之—的=㈣嘴的材料之 於該複數嘴嘴之至少另一個的管子之::之長度係與對應 2〇 , ^ 卞之長度不同。 29·如申請專利範圍第19項之沉 料層包括s i . 積/原’其中該等耐熱材 丁叶墁U栝至少一耐火金屬箔片。 30.如申請專利範圍第19項之 料層包括石墨材制。―,其巾料耐熱材 39 201118961 3 1. —種沉積源,包括: a) 複數坩堝,用以裝盛沉積材料; b) 本體,包括複數傳導通道,該複數傳導通道之每一 個的輸入被輕接至s玄複數坩堝之個別坩堝的輸出; c) 一加熱器,其被定位成與該複數坩堝及該複數傳導通 道熱相通,該加熱器加熱該複數坩堝,以致該複數坩堝之 每一個將該沉積材料蒸發進入該複數傳導通道; d) —隔熱板’其被定位圍繞該加熱器及該本體之至少— 個,該隔熱板包括複數耐熱材料層;及 e) 複數喷嘴,該複數噴嘴之每一個的輸入得,接至該複 數傳導通道之的輸出’被蒸發之沉積材料係由該複數掛 竭經過該複數傳導通道運送至該複數喷嘴,在此該被蒸發 之沉積材料係由該複數喷嘴射出,以形成一沉積通量。 .士申叫專利範圍第3 1項之沉積源,其中定位環繞著 忒加熱器及該本體之隔熱板具有許多接近該複數坩堝之其 的耐熱材料層,該等耐熱材料層係與許多接近該複 數坩堝之另一個的耐熱材料層不同。 33. 如申晴專利範圍第3丨項之沉積源,其中該隔熱板另 包括定位在該複數耐熱材料層之至少一層的表面上之堅硬 的材料。 34. 如申請專利範圍第33項之沉積源,其中該堅硬的材 料包括碳纖維板。 / 35.如中專利範圍帛34項之沉積源,#中該碳纖維板 係在至少一表面上塗覆以金屬碳化物。 40 ⑧ 201118961 ,孓如申請專利範圍第31項之沉積源,其中該堅硬的材 料被疋位在《複數耐熱#料層之至少—層的外部表面上。 37·如申請專利範圍第31項之沉積源,其中該堅硬的材 料被定位在該複數耐熱材料層的其中二層之間。 38.如申請專利範圍第31項之沉積源日,另日包括定位在該 隔熱板的至少一外部表面上之反射材料。 二如申請專利範圍第31項之沉積源,其中該隔熱板另 包括疋位在s亥複數耐熱材料層的頂部表面上之第一堅 材料、及定位在該福齡Μ &amp; u μ a α ' 復数耐熱材料層的底部表面上之第_取 硬的材料。 &lt; 罘一堅 ⑽·如U專利範圍第31項之沉積源,其中該複數喷嘴 之^ 一個包括一限制被供給至其對應喷嘴的材料之數旦 的管子’對應於該複數嘴嘴之—的管子之長度係、與對應於 該複數噴嘴之至少另一個的管子之長度不同。 ’、、、 仏如申請專利範圍帛31項之沉積源1中至少部份該 複數掛禍包括-定位在外部掛堝内側之内部掛禍。 42. 如申請專利範圍第31項之沉積源,其中該複數掛禍 包括含有鋼(Cu)之第1禍、含有銦(In)之第:㈣、及含 有鎵(Ga)之第三坩堝。 a 43. 如申請專利範圍第3 1項之沉積源,其中該加熱器包 括複數可分別控制的加熱器,其中該複數加熱器之個別加 熱器係與該複數坩堝之個別坩堝熱相通。 44·如申請專利範圍第3 1項之沉積源,其中該等耐熱材 料層包括至少一耐火金屬箔片。 201118961 45.如申請專利範圍第31項之沉積源,其中該等耐熱材 料層包括至少一石墨材料層。 八、圖式: (如次頁) 42201118961 VII. Scope of Application for Proposal·· 1. A deposition source, comprising: a) a crucible for holding a deposition material; b) a body including a conduction channel, the wheel of which is coupled to the S #竭的轮出; C) a heater positioned to be in thermal communication with the crucible and the conductive passage, the heater heating the crucible such that the crucible evaporates the deposition material into the conduction passage; d) An insulating panel positioned around the heater and at least one of the body. The heat shield comprises a plurality of layers of heat resistant material; and a plurality of nozzles, each of the plurality of nozzles being connected to The output of the conductive channel is such that the evaporated deposition material is transported from the crucible through the paraphilic channel to the plurality of nozzles, where the evaporated deposition material is: ejected from the plurality of nozzles to form a deposition flux. The deposition source of the ninth aspect of the invention, wherein the heat shield further comprises a hard material positioned on at least a surface of the layer of the plurality of heat resistant materials. The deposition source of the two items, wherein the hard material 3. The corrosion protection is provided as in the scope of the patent application. 4. The deposition source of claim 2, wherein the hard material comprises a carbon fiber board. 5. The deposition source of claim 4, wherein the carbon fiber board is coated with metal carbide on at least one surface. . 6. The deposition source of claim 4, wherein the carbon fiber sheet 36 201118961 has a thickness in the range of 0.02 and 〇 Π δ over a long period of time. The deposition source of the second item of the patent scope, the hard material in the bean is defined as: "the surface of at least one layer of the heat resistant material layer. The deposition source of the second paragraph of the patent of the patent, wherein the hard material Between the two layers of the plurality of heat-resistant material layers. The deposition source of claim 1 of the patent scope further includes a reflective material positioned on at least the outer surface of the heat shield. The deposition source of item 1, wherein the heat insulating plate further comprises a first hard material on a top surface of the plurality of heat resistant material layers and a second hard surface on a bottom surface of the plurality of heat resistant material layers U. The deposition source of claim 1, wherein at least one of the first and second hard materials comprises a carbon fiber board. 12. A deposition source according to the scope of claim 专利10, * at least one outer surface of the first and first hard materials is coated with a metal carbide. 13. The deposition source of claim 1, wherein at least a portion of the plurality of heat resistant material layers have w and U are thicker degrees. wherein the plurality of heat-resistant portions of the plurality of heat-resistant materials are the heat-resistant materials. 14. The deposition source material layer of claim 1 includes more than 5 layers of graphite material. The deposition source material layer of 帛1 includes more than 10 layers of graphite material. 16· The deposition source layer according to the scope of claim ώ includes at least one refractory metal foil. 37 201118961 1 7·If the patent application scope is 丨The deposition source of the item, wherein the heat resistant material layer comprises at least one layer of graphite material. 18. The deposition source of claim </ RTI> wherein the at least two of the plurality of nozzles comprise a limit to be supplied to the corresponding nozzle The amount of material of the tube 'the length of the tube corresponding to one of the plurality of nozzles is different from the length of the tube corresponding to at least one other of the S-fold sneeze. 1 9. A deposition source comprising: a) - 坩埚, For holding the deposition material; b) - the body, comprising a plurality of conduction channels, the wheel of the plurality of conduction channels being coupled to the output of the crucible; c) a heater positioned The crucible is in thermal communication with the plurality of conduction channels, the heater heating the crucible such that the crucible evaporates the deposition material into the plurality of conduction channels; d) an insulating panel positioned to surround the heater and the body One of the 'insulation panels includes a plurality of layers of heat resistant material; and e) a plurality of nozzles, the input of each of the plurality of nozzles being coupled to the output of the plurality of conductive channels such that the deposited material being evaporated is The catastrophic transport is carried through the plurality of conductive channels to the plurality of nozzles, wherein the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. 20. The deposition source according to claim 9 of the patent application, wherein Positioning surrounds: the heat insulator and the heat shield of the body have a plurality of layers of heat resistant material adjacent to the plurality of conductive channels, the heat resistant material layers and a plurality of other conductive channel materials adjacent to the plurality of conductive channels The layers are different. .21. The deposition source of claim 19, wherein the heat shield further comprises a rigid material positioned on a surface of at least one of the plurality of layers of heat resistant material. 22' The deposition source of claim 2, wherein the hard material comprises a carbon fiber board. ^ 23. The deposition source of claim 22, wherein the carbon fiber board is coated with a metal carbide on at least one surface. 24. The deposition source of claim 21, wherein the hard material is positioned on at least an outer surface of the layer of the plurality of heat resistant material layers. The deposition source of claim 2, wherein the hard material is positioned between two of the layers of the plurality of heat resistant materials. 6. The deposition source of claim 19, further comprising a reflective material positioned on at least one outer surface of the heat shield. 27· If the source of the patent application is 19 ^ ^, the heat shield is further clamped on the surface of the plurality of heat-resistant materials UM ^ Μ ^ #, the first hard 弋 position in the plurality of heat-resistant materials Layer $ hard material. I is the first firmer 28' on the clothing song, as claimed in the 19th article of the patent application, at least the reversal of the L-storage/original, wherein the plurality of nozzles to the second of the nozzles includes a tube that limits the amount of supply, corresponding to The material of the (four) nozzle of the plurality of nozzles is at least the length of the tube of the plurality of nozzles: the length is different from the length of the corresponding 2〇, ^ 。. 29. The sink layer of claim 19 includes s i. product/original wherein the heat resistant materials are at least one refractory metal foil. 30. The material layer of item 19 of the patent application includes a graphite material. ―, towel heat-resistant material 39 201118961 3 1. A deposition source, comprising: a) a plurality of enthalpy for holding the deposition material; b) a body comprising a plurality of conduction channels, the input of each of the plurality of conduction channels being Lightly connected to the output of the individual 坩埚 of the s 玄 complex number; c) a heater positioned to be in thermal communication with the plurality of turns and the plurality of conductive paths, the heater heating the plurality of turns such that each of the plurality of turns Evaporating the deposition material into the plurality of conductive channels; d) - a heat shield 'which is positioned around at least one of the heater and the body, the heat shield comprising a plurality of layers of heat resistant material; and e) a plurality of nozzles The input of each of the plurality of nozzles, the output of the plurality of conductive channels is evaporated from the plurality of deposited materials through the plurality of conductive channels to the plurality of nozzles, where the evaporated deposition material is The plurality of nozzles are ejected to form a deposition flux. The invention relates to a deposition source of the third aspect of the patent scope, wherein the heat shield which is positioned around the crucible heater and the body has a plurality of layers of heat resistant material close to the plurality of crucibles, and the layers of the heat resistant material are close to many The other layer of the plurality of heat-resistant materials is different. 33. The deposition source of claim 3, wherein the heat shield further comprises a hard material positioned on a surface of at least one of the plurality of layers of heat resistant material. 34. The deposition source of claim 33, wherein the hard material comprises a carbon fiber board. / 35. The deposition source of claim 34, wherein the carbon fiber board is coated with a metal carbide on at least one surface. 40 8 201118961, for example, the deposition source of claim 31, wherein the hard material is clamped on at least the outer surface of the layer of the plurality of heat resistant layers. 37. The deposition source of claim 31, wherein the hard material is positioned between two of the layers of the plurality of heat resistant materials. 38. The deposition source day of claim 31, the other day comprising a reflective material positioned on at least one outer surface of the heat shield. 2. The deposition source of claim 31, wherein the heat shield further comprises a first hard material on a top surface of the swarf heat resistant material layer, and is positioned in the Fuling Μ &amp; u μ a The material of the bottom surface of the alpha 'complex heat resistant material layer is the hard material. &lt; 罘一坚 (10). The deposition source of item 31 of the U patent, wherein the plurality of nozzles includes a tube that limits the material supplied to the corresponding nozzle for a plurality of deniers corresponding to the plurality of nozzles - The length of the tube is different from the length of the tube corresponding to at least one other of the plurality of nozzles. ',,, for example, at least part of the deposition source 1 of the application for patent coverage 帛 31. The multiple accidents include - positioning inside the external hanging shackles. 42. The deposition source of claim 31, wherein the plurality of defects include a first accident containing steel (Cu), a third containing indium (In), and a third germanium containing gallium (Ga). A. The deposition source of claim 31, wherein the heater comprises a plurality of separately controllable heaters, wherein the individual heaters of the plurality of heaters are in thermal communication with the individual heaters of the plurality of turns. 44. The deposition source of claim 31, wherein the heat resistant material layer comprises at least one refractory metal foil. The deposition source of claim 31, wherein the heat resistant material layer comprises at least one layer of graphite material. Eight, the pattern: (such as the next page) 42
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KR20120104559A (en) 2012-09-21
CN102686765A (en) 2012-09-19
TW201142055A (en) 2011-12-01
EP2507403A1 (en) 2012-10-10
EP2507402A1 (en) 2012-10-10
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EP2507403A4 (en) 2013-10-23
CN102712993A (en) 2012-10-03

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