CN104218189A - Sublimating and purifying method and sublimating and purifying device thereof for organic semiconductor materials - Google Patents
Sublimating and purifying method and sublimating and purifying device thereof for organic semiconductor materials Download PDFInfo
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- CN104218189A CN104218189A CN201410423404.1A CN201410423404A CN104218189A CN 104218189 A CN104218189 A CN 104218189A CN 201410423404 A CN201410423404 A CN 201410423404A CN 104218189 A CN104218189 A CN 104218189A
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- Prior art keywords
- sublimating
- sublimation purification
- purification device
- filter membrane
- purifying
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/311—Purifying organic semiconductor materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D7/00—Sublimation
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Abstract
The invention discloses a sublimating and purifying method and a sublimating and purifying device thereof for organic semiconductor materials and belongs to the technical field of sublimating and purifying furnaces. The sublimating and purifying device comprises a plurality of inner pipes which are sequentially connected. The sublimating and purifying device is characterized in that a filter film is arranged between each two adjacent inner pipes and has a substance absorbing and ventilating function. The organic semiconductor materials are heated and pass the filter films among the inner pipes after sublimated, most impurities are absorbed, main substances are rich in a material collection area, and improvement of purity of the main substances is facilitated.
Description
Technical field
The invention belongs to sublimation purification stove technical field, particularly sublimation purification device.
Background technology
Organic electronic device has the advantages such as active illuminating, response time short, wide viewing angle, true color, low power consumption because of it, at home and abroad receives much concern.And the purity of organic semiconducting materials directly affects operating characteristic and the stability of organic electronic device.The impurity being in organic luminous layer can form trap, and stop the diffusion motion of exciton, capture portion divides exciton, causes the cancellation of exciton, thus can reduce the luminous efficiency of organic electroluminescence device; The impurity being in carrier blocking layers can capture charge carrier, reduces the efficiency of transmission of charge carrier; Impurity forms the injection that internal electric field stops subsequent charge after catching charge carrier, add the open circuit voltage of device, reduce current density; In addition, the unsteadiness of impurity is easily decomposed, and affects the life-span of device.Therefore the purity improving organic semiconducting materials is most important.
Purification process conventional both at home and abroad is at present that gradient sublimation is purified, and by arranging the temperature of different warm area, makes glass tube to be formed certain temperature gradient, by needing the material carrying out purifying to be placed on high-temperature heating district, makes material sublimation.Material after distillation is diffused in low-temperature space and deposits, and generally, highly purified deposition of material is in the distance that distillation region is very short, and the crystallizing field of impurity away from distillation region, thus reaches the object of removing impurities.But due in gradient sublimation method of purification, the temperature gradient formed is uniquely the power making material be separated, and therefore needs careful control temperature in sublimation process.And heating sublimation cannot meet the requirement of purity usually, the material that needs a person with the qualifications of a general carries out secondary distillation even repeatedly to reach enough purity.
To place obstacles thing in distillation heating tube in disclosed organic molecule sublimation purification method in patent CN102924207A disclosed in the people such as Guangdong Aglaia Optoelectronic Materials Co., Ltd. Dai Lei, change sublimation purification path, but the existence of barrier makes air-flow pass from tapping, add air velocity, material is reduced in the deposition of follow-up barrier, most material is at the first plate washer area deposition, and follow-up barrier place deposition materials is little, therefore, the existence of barrier is effectively reclaimed quality and is not improved, and even decreases recovery quality.
Summary of the invention
Technical problem to be solved by this invention is, overcome the deficiencies in the prior art part, a kind of method of organic semiconducting materials sublimation purification is provided, adopt inside that filter membrane is set and carry out adsorbing contaminant, thus reach principal goods matter and be separated in sublimation process with impurity, product purity is higher, and air velocity is even.
The technical problem to be solved in the present invention is achieved through the following technical solutions, sublimation purification device, comprises interior pipe, and interior pipe is multiple, and connects successively, and arrange filter membrane between adjacent two interior pipes, filter membrane has the effect of adsorbent and ventilation.
Further, described adsorbent is active carbon or carbon nano-tube or Graphene, primary attachment impurity and part main matter.
Further, described filter membrane has thermal conductivity, makes collecting region gather, and improves output.
Further, described filter membrane filter membrane is one or more.
Further, described filter membrane is the combination of adsorbent and supporter, for adsorbent provides support carrier.
Further, described supporter is that empty shape is or/and network structure.
Further, it is characterized in that the sorbing material contained by each grid can for multiple.
Further, it is characterized in that the aperture of grid is between 1 micron to 1 centimetre.
Further, it is characterized in that sorbing material can have orientation.
Organic semiconducting materials sublimation purification method, by organic semiconducting materials through heating, by the filter membrane between interior pipe after distillation, moieties is adsorbed, and impurity portion is adsorbed in a large number, and principal goods matter is enriched in material collection district.
The invention has the beneficial effects as follows:
1. owing to arranging filter membrane between interior pipe, filter membrane can adsorbing contaminant material, is conducive to the purity improving principal goods matter.
2., because grid is made up of the material with adsorption function, suitable sorbing material can be selected according to the performance of purification material.
3., due to the good conductor that grid is heat, material can be avoided to condense on grid.
Accompanying drawing illustrates:
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of filter membrane of the present invention;
In figure: 1, interior pipe, 2, filter membrane, 3, grid, 4, carbon nano-tube.
Embodiment:
As shown in Figure 1, sublimation purification device comprises in 6 manages, and from the thermal treatment zone, arrange filter membrane between adjacent inner tube, arrange three filter membranes, as shown in Figure 2, this filter membrane carbon nano-tube is made into network structure to be close to steel grid; Organic semiconducting materials is placed in thermal treatment zone heating, by the filter membrane between interior pipe after distillation, wherein impurity and principal goods matter are adsorbed, and impurity is larger by ratio of adsorption, principal goods matter containing a small amount of impurity is by further filter membrane, further purifying, until obtain highly purified principal goods matter in material collection district.
The invention is not restricted to described embodiment, telling on, identical any equivalent substitution is all included within open scope of the present invention with changing.All distortion that those of ordinary skill in the art can directly derive from content disclosed by the invention or associate, all should belong to protection scope of the present invention.
Claims (9)
1. sublimation purification device, comprises interior pipe, and interior pipe is multiple, and connects successively, it is characterized in that, arrange filter membrane between adjacent two interior pipes, filter membrane has the effect of adsorbent and ventilation.
2. sublimation purification device according to claim 1, is characterized in that adsorbent is active carbon or carbon nano-tube or Graphene or carbon fiber or silica gel or diatomite or porous ceramic.
3. sublimation purification device according to claim 1, is characterized in that filter membrane has thermal conductivity.
4. sublimation purification device according to claim 1, is characterized in that filter membrane is one or more.
5. sublimation purification device according to claim 1, is characterized in that filter membrane is the combination of adsorbent and supporter.
6. sublimation purification device according to claim 5, its feature is that empty shape is or/and network structure at supporter.
7. sublimation purification device according to claim 5, is characterized in that the sorbing material contained by each grid can for multiple.
8. sublimation purification device according to claim 5, is characterized in that the aperture of grid is between 1 micron to 1 centimetre.
9. sublimation purification device according to claim 5, is characterized in that sorbing material can have orientation.
Priority Applications (1)
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CN201410423404.1A CN104218189A (en) | 2014-08-26 | 2014-08-26 | Sublimating and purifying method and sublimating and purifying device thereof for organic semiconductor materials |
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CN201410423404.1A CN104218189A (en) | 2014-08-26 | 2014-08-26 | Sublimating and purifying method and sublimating and purifying device thereof for organic semiconductor materials |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104645658A (en) * | 2015-01-14 | 2015-05-27 | 武汉尚赛光电科技有限公司 | Vacuum system protection device with multi-layer screen cloth |
CN110882556A (en) * | 2018-09-10 | 2020-03-17 | 三星显示有限公司 | Apparatus for manufacturing organic material |
CN111233710A (en) * | 2018-11-28 | 2020-06-05 | 弗萨姆材料美国有限责任公司 | Low halide lanthanide precursors for vapor deposition |
-
2014
- 2014-08-26 CN CN201410423404.1A patent/CN104218189A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104645658A (en) * | 2015-01-14 | 2015-05-27 | 武汉尚赛光电科技有限公司 | Vacuum system protection device with multi-layer screen cloth |
CN110882556A (en) * | 2018-09-10 | 2020-03-17 | 三星显示有限公司 | Apparatus for manufacturing organic material |
KR20200029687A (en) * | 2018-09-10 | 2020-03-19 | 삼성디스플레이 주식회사 | Manufaturing device of organic and method for manufacturing organic using the same |
KR102576431B1 (en) | 2018-09-10 | 2023-09-08 | 삼성디스플레이 주식회사 | Manufaturing device of organic and method for manufacturing organic using the same |
US11930691B2 (en) | 2018-09-10 | 2024-03-12 | Samsung Display Co., Ltd. | Apparatus for manufacturing organic material and method of manufacturing organic material using the apparatus |
CN111233710A (en) * | 2018-11-28 | 2020-06-05 | 弗萨姆材料美国有限责任公司 | Low halide lanthanide precursors for vapor deposition |
US20210363162A1 (en) * | 2018-11-28 | 2021-11-25 | Versum Materials Us, Llc | Low Halide Lanthanum Precursors For Vapor Deposition |
US11753420B2 (en) * | 2018-11-28 | 2023-09-12 | Versum Materials Us, Llc | Low halide lanthanum precursors for vapor deposition |
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Application publication date: 20141217 |