CN102686765A - Linear deposition source - Google Patents

Linear deposition source Download PDF

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Publication number
CN102686765A
CN102686765A CN2010800599075A CN201080059907A CN102686765A CN 102686765 A CN102686765 A CN 102686765A CN 2010800599075 A CN2010800599075 A CN 2010800599075A CN 201080059907 A CN201080059907 A CN 201080059907A CN 102686765 A CN102686765 A CN 102686765A
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CN
China
Prior art keywords
nozzles
nozzle
crucible
source
deposit
Prior art date
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Pending
Application number
CN2010800599075A
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Chinese (zh)
Inventor
C·康罗伊
S·W·普里迪
J·A·达尔斯特伦
R·布雷斯纳汉
D·W·戈特霍德
J·帕特林
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Veeco Instruments Inc
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Veeco Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from US12/628,189 external-priority patent/US20100159132A1/en
Application filed by Veeco Instruments Inc filed Critical Veeco Instruments Inc
Priority claimed from PCT/US2010/039093 external-priority patent/WO2011065999A1/en
Publication of CN102686765A publication Critical patent/CN102686765A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L59/00—Thermal insulation in general
    • F16L59/02—Shape or form of insulating materials, with or without coverings integral with the insulating materials
    • F16L59/029—Shape or form of insulating materials, with or without coverings integral with the insulating materials layered

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A deposition source includes at least one crucible for containing deposition material. A body includes a conductance channel with an input coupled to an output of the crucible. A heater increases a temperature of the crucible so that the crucible evaporates the deposition material into the conductance channel. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. At least one of the plurality of nozzles includes a tube that is positioned proximate to the conductance channel so that the tube restricts an amount of deposition material supplied to the nozzle including the tube.

Description

Straight line deposit source
Technical field
Chapter title used herein only is used for organizational goal, and never should be interpreted as the theme that restriction is described in this application.
The related application part
The U.S. Patent application 12/628 that the application submitted on November 30th, 2009, title is Linear Deposition Source (straight line deposit source); 189 part continues; The latter require for submit on February 27th, 2009, title is the U.S. Provisional Patent Application 61/156,348 of " Deposition Sources; Systems, and Related Methods for Co-Depositing Copper, Indium; and Gallium (be used for deposit source, system of common cement copper, indium and gallium and associated method) "; With submit on December 18th, 2008, title is the U.S. Provisional Application 61/138 of " Deposition Sources; Systems; and Related Methods for Co-Depositing Copper, Indium, and Gallium (be used for deposit source, system of common cement copper, indium and gallium and associated method) "; 932, both right of priority.Whole specification sheetss of U.S. Patent application 12/628,189, U.S. Provisional Application 61/156,348 and U.S. Provisional Application 61/138,932 are incorporated this paper into through reference.
Background technology
For many years, the large area substrates deposition system has been used for handling the flexible web substrate and the rigid panel substrate of broad variety substrate material.Multiple known system is designed to, and handles webs of plastic substrate and rigid panel glass substrate.Web substrate or rigid panel are directly passed through above straight line deposit source.Known straight line deposit source comprises the ship shape crucible, and these known straight line deposit sources are suitable for material evaporation on the web substrate or on the rigid panel substrate, and this ship shape crucible is typically formed by the refractory materials that is used for comprising the deposit source material.Crucible is placed on the inside of steam outlet pipe.Steam outlet pipe plays the spatial effect of evaporating space and distributing steam simultaneously.One or more vapour outlet opening is pressed linear arrangement along the source.
Description of drawings
In the following detailed description that connection with figures is carried out, more specifically describe the present invention according to preferred and example embodiment, with and additional advantage.It will be apparent to one skilled in the art that the accompanying drawing that describes below has been merely illustration purpose.Accompanying drawing needn't be in proportion, but focus on explanation principle of the present invention generally.Accompanying drawing never is used to limit scope of the present invention.
Figure 1A illustrates the elevation cross-sectional view according to straight line deposit of the present invention source, and this straight line deposit source comprises a plurality of crucibles, and these crucibles are connected on many conduction pathways, and are connected to then on a plurality of nozzles that are in linear structure.
Figure 1B illustrates the elevation cross-sectional view according to straight line deposit of the present invention source, and this straight line deposit source comprises a plurality of crucibles, and these crucibles are connected on the wall scroll conduction pathway, and are connected to then on a plurality of nozzles that are in linear structure.
Fig. 2 A illustrates the cross-sectional view in the straight line deposit source of contact Figure 1A and 1B description, and these straight line deposit sources have a plurality of nozzles, and these nozzles are positioned to, and they are evaporation deposition materials on the direction that makes progress.
Fig. 2 B illustrates the cross-sectional view according to straight line deposit of the present invention source, and this straight line deposit source has a plurality of nozzles, and these nozzles are positioned to, and they are evaporation deposition materials on downward direction.
Fig. 2 C illustrates the cross-sectional view according to straight line deposit of the present invention source, and this straight line deposit source has body, and this body comprises a plurality of nozzles, and these nozzles are positioned on the vertical direction.
Fig. 2 D illustrates the cross-sectional view according to another straight line deposit source of the present invention, and this straight line deposit source has body, and this body comprises a plurality of nozzles, and these nozzles are positioned on the vertical direction.
Fig. 3 A illustrates the elevation cross-sectional view according to straight line deposit of the present invention source, and this straight line deposit source comprises single crucible, and this single crucible is connected on many conduction pathways, and is connected to then on a plurality of nozzles that are in linear structure.
Fig. 3 B illustrates the elevation cross-sectional view according to straight line deposit of the present invention source, and this straight line deposit source comprises single crucible, and this single crucible is connected on the wall scroll conduction pathway, and is connected to then on a plurality of nozzles that are in linear structure.
Fig. 4 illustrates the elevation cross-sectional view of the crucible that is used for straight line deposit of the present invention source, and this crucible is formed by two types material.
Fig. 5 A illustrates the top perspective view according to the part in straight line deposit of the present invention source, and this illustrates three conduction pathways, and these three conduction pathways are connected on three crucibles in shell.
Fig. 5 B illustrates the top perspective view according to the part in straight line deposit of the present invention source, and this illustrates the wall scroll conduction pathway, and this wall scroll conduction pathway is connected on three crucibles in shell.
Fig. 6 A is the stereographic map of a part that is used for the resistance crucible well heater in straight line deposit of the present invention source, and this illustrates inboard and three sidepieces of well heater, at this location, place crucible.
Fig. 6 B is the stereographic map in the outside of one of a plurality of crucible well heaters, and these crucible well heaters are used for heating each crucible in a plurality of crucibles.
Fig. 7 A is that this illustrates the conduction pathway well heater according to the side-view in straight line deposit of the present invention source, and these conduction pathway well heaters are used for heating many conduction pathways.
Fig. 7 B is the stereographic map of bar, and these bars comprise the conduction pathway well heater.
Fig. 7 C illustrates the stereographic map according to the body in straight line deposit of the present invention source, and this illustrates and is used for the engaged at end of the bar joint to the body.
Fig. 8 illustrates the framework of body, and this framework comprises the expansion link portions.
Fig. 9 A is the elevation cross-sectional view of thermoscreen, and this thermoscreen is used for a plurality of crucibles, and is used for many conduction pathways according to straight line deposit of the present invention source.
Fig. 9 B is the complete stereographic map at the thermoscreen shown in Fig. 9 A.
Figure 10 illustrates the top perspective view according to deposit of the present invention source, and this illustrates a plurality of nozzles in body, and these nozzles are used for the material that is evaporated is discharged on substrate or other workpiece.
Figure 11 A illustrates the cross-sectional view according to the body in deposit of the present invention source, and this illustrates a row nozzle, and these nozzles are connected on the conduction pathway, and this conduction pathway has pipe, these pipe control deposition material flowing to nozzle.
Figure 11 B illustrates the cross-sectional view according to many conduction pathways in deposit of the present invention source, and this illustrates row's nozzle, and these nozzles are connected on many conduction pathways, and these conduction pathways have pipe, these pipe control deposition material flowing to nozzle.
Figure 12 illustrates the stereographic map of nozzle, and this nozzle is formed a nozzle in a plurality of nozzles, and these nozzles are used for according to straight line deposit of the present invention source.
Embodiment
Mean for " embodiment " or mentioning of " embodiment " that in this manual concrete characteristic, structure or characteristic that contact embodiment describes are included among at least one embodiment of invention.Phrase " in one embodiment " each local appearance in this manual needn't all refer to same embodiment.
Should be appreciated that each step of method of the present invention can be by any order and/or side by side carried out, practical as long as invention keeps.In addition, should be appreciated that equipment of the present invention and method can comprise any amount or whole described embodiment, practical as long as invention keeps.
To describe the present invention in more detail referring now to its example embodiment, these embodiment are shown in accompanying drawing.Although the present invention describes with each embodiment and example, the present invention does not plan to be limited to such embodiment.On the contrary, the present invention includes as will recognizing each and select example, modification and equivalent by those skilled in the art.Learned the use that person of skill in the art will appreciate that other enforcement, modification and embodiment and other field of the present invention, in these described the scope of the present disclosure here.
The present invention relates to equipment and the method that is used for producing source material steam flux in general, and this source material steam flux is used for being deposited on the substrate.Aspects more of the present invention relate to straight line deposit source, and these straight line deposit sources are suitable for producing source material steam flux, so as with deposition of materials to the elongated workpiece of web substrate, rigid panel substrate or another kind of type.Others of the present invention relate to straight line deposit source, and these straight line deposit sources are suitable for producing source material steam flux, so as with deposition of materials to substrate fixture, this substrate fixture supports a plurality of conventional substrates, like semiconductor chip.
In a plurality of embodiment of the present invention, method and apparatus relates to the deposit through evaporation.Here employed term " evaporation " is meant and converts source material to steam, and comprising the normal use of several terms in the art, like evaporation, vaporization and distillation.The source material that converts steam to can be under any state of matter.In many examples, equipment of the present invention and method are used for two kinds or more kinds of differing materials co-evaporated to substrate, as are evaporated on web substrate or the rigid panel substrate.In certain embodiments, equipment of the present invention and method are used for that list is planted material and are evaporated on the substrate, as are evaporated on web substrate or the rigid panel substrate.In a plurality of or isolated crucible, use single deposition material of planting with the interpolation redundancy, and will increase flux rate.
A kind of application of the present invention relates to and is used for copper, indium and gallium are deposited to web substrate or the on-chip method and apparatus of rigid panel jointly.The compound of two copper indium diselenide (CIS compound) is called two copper indium diselenide gallium compounds (CIGS compound), and the compound of this two copper indium diselenide has the gallium that replaces all or part of indium.The CIGS compound is commonly used to construct sensitive cell.Specifically, the CIGS compound is usually as the absorption layer in thin-film solar cells.These CIGS compounds have direct band gap, and this direct band gap is allowed the strong absorption of the solar radiation in the visibility region of electromagnetic spectrum.Verified, to compare with sensitive cell commonly used, the CIGS sensitive cell has very high efficiency of conversion and good stability, and these sensitive cells commonly used have the absorption layer compound of other type, like cadmium telluride (CdTe) and non-crystalline silicon (a-Si).
The CIGS absorption layer typically is the p type compound semiconductor layer with good crystallinity.In order to realize for the necessary required charge migration performance of high-level efficiency photo work, general requirement good crystallinity.In reality, the crystallization at least in part of CIGS absorption layer is so that realize the high-level efficiency photo work.Crystallization CIGS compound has crystalline texture, and this crystalline texture is characterized as yellow copper ore or zink sulphide according to for forming the deposition temperature that the CIGS compound uses.
The CIGS compound can be formed by various technology.Be used for forming a kind of method use precursor of CIGS compound.Precursor is pressed thin-film deposition, and anneals after this to form required cigs layer.When CIGS precursor material at low temperatures during deposit, the CIGS film of generation is an amorphous, perhaps only very weak ground crystallization.The CIGS film is annealed to improve the crystallization of CIGS compound, so that required charge migration performance is provided then at elevated temperatures.
Yet under the necessary elevated temperature of the partial crystallization that causes the CIGS film, the selenium in the film of institute's deposit is more volatile than other element.Therefore,, usually add selenium, to improve crystallization and to provide required composition and stoichiometric with the CIGS compound simultaneously with the precursor layer annealed.This method that forms CIGS film compound relatively expends time in, and in vapor phase, needs a large amount of selenium, and this has strengthened manufacturing cost.
Be used for forming the another kind of method use vacuum-evaporation of CIGS compound.By the CIGS sensitive cell of co-evaporated structure, compare with the CIGS sensitive cell of constructing with precursor material, can have high-photoelectric transformation efficiency.In this method, copper, indium, gallium and selenium are deposited on the substrate jointly.Co-evaporated allows the accurate control of film chemical metering proportion, and allows the composition classification in the film light absorption layer.Therefore, co-evaporated can be used for accurately repairing band gap, so that realize the optimal light electrical property.Yet the co-evaporated of copper, indium, gallium and selenium is possibly be difficult to the Technology used by technical scale, because be difficult on huge surface area evaporating materials equably.
One aspect of the present invention provides deposit source, system and operates such source and the method for system, to be provided for polytype device efficiently and controllably, the multiple source vaporize material of the structure of (like the CIGS sensitive cell).Another aspect of the present invention provides deposit source, system and operates such source and the method for system, with single source vaporize material of planting of the structure that is provided for polytype device (like Organic Light Emitting Diode (OLED) device) efficiently and controllably.Person of skill in the art will appreciate that describe aspects more of the present invention although get in touch the structure of CIGS sensitive cell and OLED device, the invention in the disclosure is applicable to can use the material that is evaporated and the device of any other type that is configured.
Figure 1A illustrates the elevation cross-sectional view according to straight line deposit of the present invention source 100, and this straight line deposit source 100 comprises a plurality of crucibles 102, and these crucibles 102 are connected on many conduction pathways 104, and are connected to then on a plurality of nozzles 106 that are in linear structure.Each crucible in a plurality of crucibles 102 comprises evaporation source material, and this evaporation source material can be identical or different source material.The input part of each the bar conduction pathway in many conduction pathways 104 is connected on corresponding one efferent of a plurality of crucibles 102.In many examples, many conduction pathways 104 are designed to make that at the various materials that are evaporated the various materials that are evaporated do not take place to mix each other in many conduction pathways 104 in the transportation.
Shell 108 comprises a plurality of crucibles 102.Shell 108 is formed by stainless steel or analogous material.In certain embodiments, along fluid cooling channel, shell 108 location.Shell 108 also comprises sealing flange 110, and sealing flange 110 is attached to shell 108 on the vacuum chamber (not shown).A characteristic in straight line deposit source 100 is that crucible is in the vacuum chamber outside, and therefore they are recharged easily and safeguard, strengthen suitability thus.The sealing flange 110 of body 112 extend through shells 108, this body 112 comprise many conduction pathways 104 and a plurality of nozzles 106.In certain embodiments, along fluid cooling channel, body 112 location.
In the embodiment shown in Figure 1A, source 100 comprises three crucibles 102 that are in linear structure, and the input part of three respective channel in the conduction pathway 104 is connected on the efferent of three corresponding crucibles in the crucible 102.Nozzle 106 is positioned at along a plurality of positions of each the bar conduction pathway in many conduction pathways 104.Yet, because Figure 1A is a cross-sectional view, so have only middle part conduction pathway 104 and half nozzle 106 shown in Figure 1A.
Person of skill in the art will appreciate that, can use polytype crucible.For example, at least some of a plurality of crucibles can comprise at least one crucible, and this at least one crucible is formed on another crucible interior, as described in contact Fig. 4.A plurality of crucibles 102 comprise the evaporating materials that is suitable for concrete construction process.In many examples, each crucible in a plurality of crucibles 102 comprises different evaporating materials.For example, each comprised copper of three crucibles, indium and gallium a kind of, thus material source is provided, this material source is used for the function absorption layer of co-evaporated CIGS base optoelectronic equipment efficiently.Yet in certain embodiments, at least two of a plurality of crucibles comprise identical deposition material.For example, each comprised list of three crucibles is planted material system, and this list kind material system is used for deposit and is used for the contact of OLED device.
One or more crucible well heater 114 is positioned to and a plurality of crucible 102 thermal communications.Crucible well heater 114 designs and is positioned to the temperature in order to a plurality of crucibles 102 that raise, thereby each crucible in a plurality of crucible 102 is evaporated to its corresponding deposit source material in the corresponding conduction pathway in many conduction pathways 104.Require some crucible well heaters 114 that evaporation source material is heated to very high temperature.Such crucible well heater can by graphite, silit, refractory materials or other very materials with high melting point form.Crucible well heater 114 can be single well heater, perhaps can be a plurality of well heaters.For example, in one embodiment, each the crucible well heater in a plurality of crucible well heaters can individually be controlled, thus the corresponding crucible thermal communication in the corresponding well heater in a plurality of crucible well heater and a plurality of crucible 102.
Crucible well heater 114 can be the well heater of any kind.For example, crucible well heater 114 can be a resistance heater, shown in Figure 1A.An embodiment of resistance heater gets in touch Fig. 6 A and 6B describes in more detail.Crucible well heater 114 also can be a kind of in polytype RF induction heater and/or the ir heaters.In many examples, all crucible well heater 114 all is the well heater of same type.Yet in certain embodiments, two or more of crucible well heater 114 are dissimilar well heaters, and these dissimilar heating appliances have the different thermal propertys that are used for evaporating different deposit source materials.
Each crucible well heater 114 or the conduction pathway well heater that is separated be positioned to many conduction pathways 104 at least one conduction pathway thermal communication, thereby the temperature of each the bar conduction pathway in many conduction pathways 104 is raised to more than the condensation point of deposit source material (these deposit source materials are through concrete conduction pathway).Contact Fig. 7 A, 7B and 7C describe the conduction pathway well heater.Person of skill in the art will appreciate that polytype well heater can be used for heating many conduction pathways 104, like resistance heater, RF induction heater and/or ir heaters.The conduction pathway well heater can be single well heater, perhaps can be a plurality of well heaters.Can use well heater more than one type.In one embodiment, the conduction pathway well heater has with respect to another of many conduction pathways 104, controls the ability of the temperature of one of many conduction pathways 104.
Figure 1B illustrates the elevation cross-sectional view according to straight line deposit of the present invention source 101, and this straight line deposit source 101 comprises a plurality of crucibles 102, these crucibles 102 be connected to wall scroll conduction pathway 104 ' on, and be connected to then on a plurality of nozzles 106 that are in linear structure.Straight line deposit source 101 is with to get in touch the straight line deposit source 100 that Figure 1A describes similar, and difference is, body 112 only comprise a conduction pathway 104 '.Each crucible in a plurality of crucibles 102 comprises evaporation source material, and this evaporation source material can be identical or different source material.Conduction pathway 104 ' input part be connected on the efferent of a plurality of crucibles 102.The sealing flange 110 of a plurality of nozzle 106 extend through shells 108.In the embodiment shown in Figure 1B, source 100 comprises three crucibles 102 that are in linear structure, make conduction pathway 104 ' input part be connected on the efferent of three crucibles 102.Nozzle 106 be positioned at along conduction pathway 104 ' a plurality of positions.
Crucible well heater 114 be used for the raising temperature of three crucibles 102, thus crucible with deposition material be evaporated to conduction pathway 104 ' in.Crucible well heater 114 or discrete conductive pathway heater are positioned to and conduction pathway 104 ' thermal communication, thus conduction pathway 104 ' temperature be raised to more than the condensation point of deposit source material (these deposit source materials through conduction pathway 104 ').Contact Fig. 7 A, 7B and 7C describe the conduction pathway well heater.Person of skill in the art will appreciate that, polytype well heater can be used for adding thermal conduction path 104 ', like resistance heater, RF induction heater and/or ir heaters.
The input part of each nozzle in a plurality of nozzles 106 be connected to conduction pathway 104 ' efferent on; Thereby with evaporation deposition materials from a plurality of crucibles 102 through a plurality of nozzles 106 of conduction pathway 104 ' be transported to; Thereby; Penetrate evaporation deposition materials from a plurality of nozzles 106, to form the deposit flux.
Fig. 2 A illustrate the straight line deposit source 100 and 100 that contact Figure 1A and 1B describe ' cross-sectional view, these straight line deposit sources 100 and 100 ' have a plurality of nozzles 106, these nozzles 106 are located such that their evaporation deposition materials on the direction that makes progress.A characteristic in straight line deposit of the present invention source is that a plurality of nozzles 106 can be with respect to a plurality of crucibles 102 by any orientation positions.Be used for many conduction pathways 104 or be used for wall scroll conduction pathway 104 ' heater design become, regardless of the orientation of a plurality of nozzles 106, all prevent the source material condensation that is evaporated.
Fig. 2 B illustrates the cross-sectional view according to straight line deposit of the present invention source 150, and this straight line deposit source 150 has a plurality of nozzles 106, and these nozzles 106 are located such that their evaporation deposition materials on downward direction.The straight line deposit source 150 of Fig. 2 B is similar with 101 with the straight line deposit source 100 of getting in touch Fig. 2 A description.Yet a plurality of nozzles 106 are positioned to, and their outlet aperture is faced down on the direction of a plurality of crucibles 102.
Fig. 2 C illustrates the cross-sectional view according to straight line deposit of the present invention source 152, this straight line deposit source 152 have body 112 ', this body 112 ' comprise a plurality of nozzles 106, these nozzles 106 are positioned on the vertical direction.Straight line deposit source 152 is with to get in touch the straight line deposit source 100 that Fig. 2 A describes similar with 101, and difference is that straight line deposit source 152 comprises angle bend 154, this angle bend 154 with respect to from the normal direction change body 112 of sealing flange 110 ' orientation.Person of skill in the art will appreciate that, angle bend 154 can with respect to the normal direction of sealing flange 110 by any angle orientation body 112 '.Thereby a characteristic in straight line deposit of the present invention source is, body 112 ' (this body 112 ' comprise a plurality of nozzles 106) can be by any orientation positions with respect to shell 108 (this shell 108 comprises a plurality of crucibles 102).The heater design that is used for many conduction pathways 104 (Figure 1A) becomes, regardless of body 112 ' orientation, all prevent the source material condensation that is evaporated.
Fig. 2 D illustrates the cross-sectional view according to another straight line deposit source 156 of the present invention, and this straight line deposit source 156 has body 112 ", " comprise a plurality of nozzles 106, these nozzles 106 are positioned on the vertical direction this body 112.Straight line deposit source 156 is with to get in touch the straight line deposit source 152 that Fig. 2 C describes similar, and difference is that straight line deposit source 156 comprises T junction 158, and this T junction 158 changes body 112 with respect to the normal direction from sealing flange 110 " orientation.In the embodiment shown in Fig. 2 D, body 112 " extends on vertical direction on the both sides of T junction 158.
Fig. 3 A illustrates the elevation cross-sectional view according to straight line deposit of the present invention source 200, and this straight line deposit source 200 comprises single crucible 202, and this single crucible 202 is connected on many conduction pathways 204, and is connected to then on a plurality of nozzles 206 that are in linear structure.Straight line deposit source 200 is similar with the straight line deposit source 100 of getting in touch Fig. 1 and 2 description.Yet straight line deposit source 200 only comprises a crucible 202.Single crucible 202 is positioned in the shell 208, as described in contact Fig. 1.
Single crucible 202 can have single chamber, and this single chamber is that one type deposit source material designs.A kind of like this crucible that is connected on many conduction pathways 204 will have than higher deposit flux turnout.Selectively; Single crucible 202 can have polylith dividing plate 210; These dividing plates 210 are partly isolated each section of crucible 202, thereby, set for a kind of deposit source material that is used for locating in the multiple deposit source material by the size of each section in isolated section partly.Multiple deposit source material can be a same material, perhaps can be differing materials.Partly used the identical sources material with the interpolation redundancy in the section of each in isolated section, and will increased flux rate.Comprise among the embodiment of partly isolated section of a plurality of quilts that at single crucible 202 input part of each the bar conduction pathway in many conduction pathways 204 is positioned to, near a section in partly isolated section of a plurality of quilts.
Well heater 212 is positioned to and single crucible 202 thermal communications.The temperature of well heater 212 rising crucibles 202, thus crucible is evaporated at least a deposition material in many conduction pathways 204, or be evaporated to wall scroll conduction pathway 204 ' in.Well heater 212 or secondary heater are positioned to; With at least one conduction pathway in many conduction pathways 204 or with wall scroll conduction pathway 204 ' thermal communication; Many conduction pathways 204 or wall scroll conduction pathway 204 so that raise ' temperature, make that the deposit source material that is evaporated can condensation.Can the raise temperature of at least one conduction pathway in many conduction pathways 204 of some well heaters 212---for another conduction pathway in many conduction pathways 204.
Thermoscreen 214 is positioned to, near crucible 202 and near many conduction pathways 204, to provide crucible 202 heat insulation with parts at least many conduction pathways 204.In certain embodiments, thermoscreen 214 designs and is positioned to, one section temperature with respect to another section of crucible 202 of control crucible 202.And; In certain embodiments; Thermoscreen 214 design and being positioned to, in order to provide at least one conduction pathway in many conduction pathways 204 heat insulation with respect to the part at least of at least one other conduction pathway 204, thereby differing temps can remain among two of many conduction pathways 204 at least.In this embodiment, at least two available lagging material shieldings of many conduction pathways 204, they have different thermal propertys.
A plurality of nozzles 206 are connected on many conduction pathways 204.The deposition material that is evaporated is transported to a plurality of nozzles 206 from single crucible 202 through many conduction pathways 204, and at this place, the deposition material that is evaporated penetrates from a plurality of nozzles 206, to form the deposit flux.
Fig. 3 B illustrates the elevation cross-sectional view according to straight line deposit of the present invention source 200, and this straight line deposit source 200 comprises single crucible 202, and this single crucible 202 is connected on the wall scroll conduction pathway 204, and is connected to then on a plurality of nozzles 206 that are in linear structure.Straight line deposit source 200 is similar with the straight line deposit source 200 of getting in touch Fig. 3 A description.Yet, source 201 only comprise a conduction pathway 204 '.
Line source of the present invention well is suitable for a kind of or more kinds of different deposit source materials are evaporated on the big area workpiece, on web substrate and rigid panel substrate.The rectilinear geometry in source makes them be suitable for handling wide and large-area workpiece well, like web substrate and the rigid panel substrate that uses for sensitive cell, because the source can relatively provide efficient and the highly controllable material that is evaporated on the big area.
A characteristic in straight line deposit of the present invention source is that they are compact.Another characteristic in straight line deposit of the present invention source is; They use shared well heater and shared lagging material for each the deposit source in a plurality of deposits source with for each the bar conduction pathway in many conduction pathways; This has promoted the plurality of devices performance metric, like size, equipment cost and running cost.
Fig. 4 illustrates the elevation cross-sectional view of the crucible 300 that is used for straight line deposit of the present invention source, and this crucible 300 is formed by two types material.Crucible 300 comprises at least one crucible, and this at least one crucible is positioned at another crucible interior.In the embodiment shown in Fig. 4, crucible 300 comprises inner crucible 302, and this inside crucible 302 is nested in outside crucible 304 inside.In the design of this crucible, two types material can be used for comprising deposition material, so that the performance of crucible more.In other embodiments, at least one crucible is nested at least two other crucible interior.
For example; In one embodiment; One or more of a plurality of crucibles 102 (Figure 1A and 1B) or crucible 202 (Fig. 3 A and 3B) built with inner crucible 302 and outside crucible 304, and this inside crucible 302 is formed by pyrolitic boron nitride, and this outside crucible 304 is formed by graphite.In this embodiment, the inside crucible 302 that is formed by pyrolitic boron nitride comprises the deposit source material.Pyrolitic boron nitride is a kind of non-porous, height inert and especially pure material.In addition, pyrolitic boron nitride has very high fusing point, good thermal conductivity and good thermal shock resistance properties.These performances make pyrolitic boron nitride be suitable for directly comprising most of evaporation source materials very well.Yet pyrolitic boron nitride is crisp especially, and therefore damages easily.For inner crucible material, also can use oxide compound or MOX.Outside crucible 304 is formed by the material such as graphite, and graphite is more durable, just still can high-temperature operation.Avoid damaging than durable material protection pyrolitic boron nitride.In another embodiment, inner crucible is formed by quartz, and outside crucible is formed by aluminum oxide.The combination of quartzy inner crucible and the outside crucible of aluminum oxide has than superior performance, and relatively more cheap.
Fig. 5 A illustrates the top perspective view according to the part in straight line deposit of the present invention source 100, and this illustrates three conduction pathways 104, and these three conduction pathways 104 are connected on three crucibles 102 in shell 108.Article three, the input part 118 of each the bar conduction pathway in the conduction pathway 104 is connected on corresponding one efferent of three crucibles 102.Article three, conduction pathway 104 is designed to, and when the material that is evaporated is through 104 transportations of many conduction pathways, does not mix from the material that is evaporated of any crucible in three crucibles 102 is significantly mutual.In a plurality of deposition processs, importantly, prevent the mutual mixing of deposition material basically, so that prevent before deposition material arrives the surface of the substrate be processed, to take place the reaction of two kinds or more kinds of deposition material.
Fig. 5 B illustrates the top perspective view according to the part in straight line deposit of the present invention source 101, this illustrate wall scroll conduction pathway 104 ', this wall scroll conduction pathway 104 ' be connected on three crucibles 102 in shell 108.Conduction pathway 104 ' input part 118 be connected on the efferent of three each crucibles in the crucible 102, shown in Figure 1B, perhaps be connected on the efferent of single crucible 202, shown in Fig. 3 B.
Fig. 6 A is the stereographic map of a part that is used for the resistance crucible well heater 400 in straight line deposit of the present invention source, and this illustrates inboard and three sidepieces of crucible well heater 400, at this location, place crucible 102 (Fig. 1).In each embodiment, crucible well heater 400 can be fixed in the shell 108 (Fig. 1), perhaps can removably be attached on the shell 108.Crucible well heater 400 comprises a plurality of resistance heating elements 402 on the bottom and sidepiece of crucible 102.In the embodiment shown in Fig. 6 A, resistance heating element 402 is a plurality of isolated graphite bus-bars 402, the straight line tape that these graphite bus-bars 402 are graphite materials.Supporting bar 404 structurally links together each graphite bus-bar 402, and also with each bus-bar 402 electric insulation.Resistance heating element 402 can comprise meander configuration graphite spring, and these meander configuration graphite springs are positioned between the opposite end of heating unit 402.Electric wire passes shell 108 feedings in source 100, so that graphite bus-bar 402 is connected on the power supply (not shown).Graphite bus-bar 402 comprises screw 406, and these screws 406 are used for linking securely electric wire.
Fig. 6 B is the stereographic map in the outside of one of a plurality of crucible well heaters 400, and these crucible well heaters 400 are used for heating each crucible in a plurality of crucibles 102 (Fig. 1).With similar at the stereographic map shown in Fig. 6 A, but it shows whole four sidepieces of crucible well heater 400 at the stereographic map shown in Fig. 6 B.
Fig. 7 A is that this illustrates the conduction pathway well heater according to the side-view in straight line deposit of the present invention source 100, and these conduction pathway well heaters are used for heating many conduction pathways.The stereographic map of Fig. 7 B indication rod 130, these bars comprise the conduction pathway well heater.Fig. 7 C illustrates the stereographic map according to the body 112 in straight line deposit of the present invention source 100, the figure shows the engaged at end of bar 130 joint 132 to the body 112.
With reference to Figure 1A, 1B, 7A, 7B and 7C, bar 130 is positioned to, along the length of conduction pathway 104 on the longitudinal direction of body 112 near conduction pathway 104.Bar 130 can be formed by the high temperature material of any kind, as by graphite, silit, refractory materials or other very materials with high melting point form.Bar 130 is connected electrically on the efferent of power supply (not shown), and this power supply produces the electric current that flows through bar 130, the temperature of the bar 130 that raises thus.Bar 130 can use spring or wiring system to be connected electrically on the efferent of power supply, and this spring or wiring system guarantee enough motions, to allow the thermal expansion of bar 130 during normal running.In bar 130 by the heat radiation that produces from the electric current of power supply in conduction pathway 104, the temperature of conduction pathway 104 that raises thus, thus the source material that is evaporated that passes 104 transportations of many conduction pathways can condensation.
Fig. 7 A also shows a plurality of joints 132, and these joints 132 link together each section of bar 130.In certain embodiments, the length of body 112 is length like this, thus with a plurality of sections of bar 130 be linked together more cheap, reliable and make easier.Person of skill in the art will appreciate that, have polytype can be used for a plurality of sections of bar 130 be linked together joint.For example, threaded connector can be used for two bar sections be linked together.Joint 132 provides continuously and is electrically connected, and this whole length that is electrically connected continuously through bar 130 has comparison constant resistance.
Fig. 8 illustrates the framework 500 of body 112 (Figure 1A and 1B), and this framework 500 comprises expansion link portions 502.With reference to Figure 1A, 1B, 7A and 8, many conduction pathways 104 are removed from framework 500 volume inside of body 112, so that observe expansion link portions 502.Sometimes use expansion link portions 502, because body 112 experiences significant thermal expansion and contraction during normal running.The thermal expansivity of bar 130 and many conduction pathways 104 can be different significantly with the thermal expansivity of framework 500 and other element in body 112.In addition, between framework 500 and other element in body 112 (like bar 130 and many conduction pathways 104), has significant temperature head.Therefore, required is that framework 500 freely expands with respect to other element in body 112 (like many conduction pathways 104 and bar 130) and shrinks.
In the expansion link portions 500 shown in Fig. 8 are a kind of in the polytype expansion link portions that can be used in the framework 500.In the embodiment shown in Fig. 8, the fastening piece of expansion link portions 500 usefulness pins 504 or other type is attached on two sections of framework 500.When expansion link portions 502 expanded, chained segment 506 expanded, and was that the element in body 112 produces the space thus in framework 500, and these elements expand by the speed faster than the rate of expansion of framework 500.Selectively, when the element in body 112 shrank soon than framework 500, chained segment 506 folded, and reduces the space in framework 500 thus, to be complementary with the space of shrinking body 112.
Fig. 9 A is the elevation cross-sectional view of thermoscreen 600, and this thermoscreen is used for a plurality of crucibles 102 (Figure 1A and 1B), and is used for many conduction pathways 104 according to straight line deposit of the present invention source.Fig. 9 B is the complete stereographic map at the thermoscreen 600 shown in Fig. 9 A.Person of skill in the art will appreciate that thermoscreen 600 can be processed by in polytype lagging material any.For example, in one embodiment, thermoscreen 600 is formed by the thomel carbon composite.
With reference to Figure 1A, 1B, 9A and 9B, first section 602 of thermoscreen 600 is positioned to, near each crucible in a plurality of crucibles 102, so that provide heat insulation for the part at least of each crucible in a plurality of crucibles 102.Isolate each crucible 102 for first section 602 of thermoscreen 600, thereby if necessary, then during handling, can keep significantly different crucible temperature.Each crucible in a plurality of like this crucible 102 keeps significantly that different crucible temperature is important for some deposition process, because just can be heated to it for best temperature with regard to the concrete source material.Crucible 102 is heated to their best temperature for concrete source material has reduced disadvantageous heating effect, like the splash of deposition material.In addition, crucible 102 is heated to their best temperature for concrete source material, can reduces the running cost in deposit source significantly.
In each other embodiment, first section 602 of thermoscreen 600 can comprise a plurality of thermoscreens that are separated, and wherein, the corresponding thermoscreen in a plurality of thermoscreens that are separated 600 surrounds the corresponding crucible in a plurality of crucibles 102.Each thermoscreen in a plurality of thermoscreens that are separated can be identical thermoscreen, perhaps can be different thermoscreens.For example, be used for the deposit source material is heated to the crucible of comparatively high temps, can form by different or thicker lagging material with different thermal propertys.
Second section 604 of thermoscreen 600 is positioned to, near many conduction pathways 104, so that provide the part at least between many conduction pathways 104 and a plurality of crucible 102 heat insulation.Each bar conduction pathway in many conduction pathways 104 can perhaps can use single thermoscreen by a discrete thermoscreen shielding.In certain embodiments, second section 604 of thermoscreen 600 is positioned to, in order to provide at least one conduction pathway in many conduction pathways 104 heat insulation with respect to the part at least of at least one other conduction pathway.In other words, can select second section 604 design and location of thermoscreen 600, to allow other at least with respect to many conduction pathways 104, the different operating temperature at least one conduction pathway in many conduction pathways 104.In these embodiment, at least two available lagging material shieldings of many conduction pathways 104, they have different thermal propertys.For example, at least two of many conduction pathways 104 can shield by different lagging materials, different insulating thickness and/or for the lagging material of the different degrees of closeness of concrete conduction pathway.
Thermoscreen 600 is exposed to very high temperature during normal running.Some thermoscreen according to the present invention is built has at least one surface, and this at least one surface is formed by low-emissivity material, perhaps has low emissivity coatings, and this low emissivity coatings reduces thermal-radiating emission.For example, the interior or outside surface of thermoscreen 600 can be covered with the coating of low emissivity coatings or any other type, and the coating of this other type reduces heat passage.Any such coating is usually designed to, and during the operation lifetime in source, keeps the constant emission rate.
Compare with body 112 with shell 108 and with compare with the element in the body 112 at shell 108, thermoscreen 600 also expands by different speed and shrinks.In one embodiment, thermoscreen 600 movably is attached in the shell 108 and framework 500 (Fig. 8) this two of body 112 at least one, thus it can be during normal running with respect in shell 108 and the framework 500 at least one and move.In certain embodiments, expansion link portions is used for allowing thermoscreen 600 to expand with respect to other source element and shrinks.In addition, in certain embodiments, thermoscreen 600 comprises multilayer insulation material, and these lagging materials are allowed thermal expansion and contraction.For example, a plurality of thermal insulation tiles can be used for increasing the permission for thermal expansion and contraction.
Figure 10 illustrates the top perspective view according to deposit of the present invention source 100, and this illustrates a plurality of nozzles 106 in body 112, and these nozzles 106 are used for the material that is evaporated is discharged on substrate or other workpiece.The input part of each nozzle in a plurality of nozzles 106 is connected on corresponding one efferent of many conduction pathways 104, as described in contact Fig. 5 A, perhaps be connected to conduction pathway 104 ' efferent on, as described in contact Fig. 5 B.In the embodiment shown in Fig. 5 A; The deposition material that is evaporated is not having to be transported to a plurality of nozzles 106 from a plurality of crucibles 102 through many conduction pathways 104, at this place under the mutual blended situation; The deposition material that is evaporated is discharged from a plurality of nozzles 106, to form the deposit flux.
Seven groups of nozzles 106 are shown in the source shown in Figure 10 100, and wherein, every group comprises three nozzles.Person of skill in the art will appreciate that, can comprise the nozzle of any amount group and any amount of nozzle in every group according to deposit of the present invention source.In each embodiment, the interval of a plurality of nozzles 106 can be uniform or uneven.One aspect of the present invention is that a plurality of nozzles 106 can be spaced apart unevenly, so that realize certain enabling objective.For example, in one embodiment, the interval of a plurality of nozzles 106 is selected in order to promote the homogeneity of deposit flux.In this embodiment, near the interval of the nozzle 106 the edge of body 112, more tight such as the interval of the nozzle 106 at the center near body 112 shown in Figure 10, so that near the deposit flux that be reduced of the compensation edge of body 112.Accurately can be selected at interval, make deposit source 100 produce basic deposition material flux uniformly near substrate or workpiece.
In certain embodiments, the interval of a plurality of nozzles 106 is selected in order to obtain the material use efficiency of height, so that reduce the running cost in deposit source 100 and increase process time and the suitability between service intervals.And in certain embodiments, the interval of a plurality of nozzles 106 is selected in order to required overlapping from the deposit flux of a plurality of nozzles 106 to be provided, so that realize the pre-mixed of the various materials that are evaporated.
In one embodiment, at least one nozzle in a plurality of nozzles 106 is pressed the certain angle location with respect to the normal angle of the top surface 160 of conduction pathway 104, so that realize certain enabling objective.For example; In one embodiment; At least one nozzle in a plurality of nozzles 106 is pressed certain angle location with respect to the normal angle of the top surface 160 of conduction pathway 104, and this angle is selected in order to the even deposit flux on the surface that strides across the substrate that is processed or workpiece to be provided.And; In certain embodiments; At least one nozzle in a plurality of nozzles 106 is pressed the certain angle location with respect to the normal angle of the top surface 160 of conduction pathway 104; This angle is selected in order to required overlapping from the deposit flux of a plurality of nozzles 106 to be provided, to realize the pre-mixed of the various materials that are evaporated.
Figure 11 A illustrates the cross-sectional view according to the body 112 in deposit of the present invention source 100; This illustrates a row nozzle 106; These nozzles 106 are connected on the conduction pathway 104, and this conduction pathway 104 has pipe 170, these pipe 170 control deposition material flowing to nozzle 106.Pipe 170 is positioned adjacent to conduction pathway 104, thereby pipe 170 restrictions supply to the amount of the deposition material of nozzle 106.Pipe 170 navigates in the conduction pathway 104 at least in part.Can select the length of pipe 170, to realize predetermined deposit flux through nozzle 106.With the length of the corresponding pipe 170 of one of a plurality of nozzles 106, can be different from the length of another corresponding pipe at least of a plurality of nozzles 106.In certain embodiments, the emittance of locating at the top of pipe 170 is lower than the emittance in the at of pipe 170, so that required thermal gradient to be provided.
Can select some or whole geometrical shapies of nozzles in each nozzle 106, to promote homogeneity.For example, at least one nozzle in a plurality of nozzles 106 can comprise the output aperture, and this output aperture is shaped as in order to transmit uneven deposit flux.With the geometrical shape of a corresponding pipe 170 of nozzle in a plurality of nozzles 106, can be different from a plurality of nozzles 106 in the geometrical shape of the corresponding pipe 170 of another nozzle at least.
The interval of a plurality of nozzles 106 can be uneven, to realize certain enabling objective.For example, compare with near the interval of a plurality of nozzles 106 center of body 112, near the interval of a plurality of nozzles 106 the edge of body 112 can be more tight.The interval of a plurality of nozzles 106 can be selected in order to realize discharging basic deposition material flux uniformly from a plurality of nozzles 106.And the interval of a plurality of nozzles 106 can be selected in order to increase the utilization ratio of deposition material.And the interval of a plurality of nozzles 106 can be selected in order to the required overlapping of the deposit flux of discharging from a plurality of nozzles 106 to be provided.
The size of pipe 170 like the length and the diameter of pipe 170, confirms to supply to from conduction pathway 104 amount of the deposition material of corresponding nozzle 106.In addition, the location of pipe 170 is positioned at the distance in the conduction pathway 104 like pipe 170, also confirms to supply to from conduction pathway 104 amount of the deposition material of corresponding nozzle 106.
For example, change the diameter of pipe 170, can change the deposit flux pattern that sends from nozzle 106.Overall flow resistance and design that the length of pipe 170 generally is selected to pipe 170 are complementary.In certain embodiments, further penetrate in the conduction pathway 104 than long tube 170, will supply to corresponding nozzle 106 to the less deposition material that is evaporated.In each embodiment, the geometrical shape of concrete pipe 170 can be identical with the position, perhaps can be different.In one embodiment, the two tubes at least in many pipes 170 can have different length and/or different geometric shape, so that obtain the concrete conductivity through each the root pipe in the many pipes 170, this realizes certain enabling objective.For example, the pipe 170 that has a different size can be used for compensating in source 100 pressure reduction of 112 end near the body the sealing flange 110 112 to body.
Thereby; A characteristic in deposit of the present invention source 100 is; Can select the geometrical shape and the location of pipe 170, supply to the amount of the source material that is evaporated of each nozzle in a plurality of nozzles 106, and not change the distribution of the material that is evaporated that sends from a plurality of nozzles 106 with control accurately.For example, the geometrical shape of concrete pipe 170 and position can be selected in order to realizing certain enabling objective, as from concrete nozzle or from the predetermined deposit flux of a plurality of nozzles 106.
In certain embodiments, at least one nozzle in a plurality of nozzles 106 extends to the top of the top surface of conduction pathway 104, so that prevent after for some time, to take place vapor condensation and material accumulating.Nozzle also can be oriented in order to realize required deposit Flux Distribution pattern.Each nozzle heater can be oriented near one or more nozzle in a plurality of nozzles 106, the temperature of the material that is evaporated that sends from nozzle 106 with control, and prevent condensation and material accumulating.In other embodiments; At least one nozzle in a plurality of nozzles 106 be positioned at many conduction pathways 104 top surface 160 below; So that conduction is from the aequum of the heat of well heater and many conduction pathways 104, and/or realize required deposit Flux Distribution pattern.
Figure 11 B illustrates the cross-sectional view according to many conduction pathways 104 in deposit of the present invention source 100; This illustrates row's nozzle 106; These nozzles 106 are connected on many conduction pathways 104; These conduction pathways 104 have pipe 170, these pipe 170 control deposition material flowing to nozzle 104.Figure 11 B representes to have three conduction pathways of pipe.In each embodiment, pipe can have different lengths, shown in Figure 11 B.One aspect of the present invention is that nozzle 106 is by conduction pathway well heater (bar 130 in Fig. 7 A-C) and by 104 heating of relevant conduction pathway.
Figure 12 illustrates the stereographic map of nozzle 106, and this nozzle 106 comprises a nozzle in a plurality of nozzles, and said a plurality of nozzles are used for according to straight line deposit of the present invention source 100 and 101.In certain embodiments, nozzle 106 comprises conical outer surface and/or cone-shaped inner surface, with the required thermal gradient of the material that is provided for being evaporated.Nozzle 106 is designed to make it that the thermal conduction of requirement can be provided, with the source material condensation that prevents to be evaporated.
At least one nozzle in a plurality of nozzles 106 can be formed by certain material, and can comprise certain coating, with gain performance.For example, nozzle 106 can be formed by the material with a kind of thermal conductivity, and it causes basic service temperature uniformly, thereby reduces the splash from the deposition material of nozzle.For example, nozzle 106 can by graphite, silit, refractory materials or other very materials with high melting point form.In certain embodiments, nozzle 106 is designed in order to reduce the thermal gradient by the material experience of passing through nozzle 106.In addition, can nozzle 106 be designed to, make whole radiation loss minimum.Nozzle 106 can comprise low emissivity coatings at least one outside surface.
Nozzle 106 comprises aperture 180, and this aperture 180 is used for making the source material that is evaporated of autocorrelative conduction pathway 104 to pass through.The certain angle location can be pressed with respect to the normal angle of the top surface of conduction pathway 104 in the output aperture 180 of at least one nozzle in a plurality of nozzles, as described in contact Figure 10.In certain embodiments, the surface in aperture 180 has low emissivity coatings, and this low emissivity coatings reduces heat emission, reduces any condensation in nozzle 106 thus.
The required plume of the material that aperture 180 is designed to be evaporated in order to discharge.The aperture 180 of circular has been shown in the nozzle 106 of Figure 12.Yet, should be appreciated that, in nozzle 106, can use any shape of multiple orifice shapes, to realize required process goal.For example, aperture 180 can be circle, ellipse, rectangle, square or be slot-shaped.In addition, the outlet in shown aperture 180 has round-shaped.Yet, should be appreciated that any of multiple outlet shape can be used in aperture 180, to realize required process goal.For example, the outlet shape can be a chamfering, the fillet that is cut into or sumo pattern (that is the throttle nozzle shape of reverse gradient (reverse draft) or other type).
In certain embodiments, at least one nozzle in a plurality of nozzles 106 has aperture 180, and this aperture 180 is configured as in order to transmit uneven deposit flux.In these embodiment, at least some of a plurality of apertures 180 can be shaped as in order to transmit uneven deposit flux, and this inhomogeneous deposit flux combination is to form required deposit flux pattern.For example, required combination deposit flux pattern can be even deposit flux pattern on predetermined area.
In operation, a kind of method that produces the deposit flux from a plurality of deposits source comprises: heat a plurality of crucibles 102, each crucible in these crucibles 102 comprises the deposit source material, thereby each crucible in a plurality of crucible 102 evaporates deposition material.Method can comprise the crucible well heater that control independently is discrete mutually, to realize being used for the different crucible temperature of every kind of deposit source material.Method also can comprise each crucible in a plurality of crucibles 102 of shielding, thereby differing temps can remain in the concrete crucible.
Deposition material from each crucible in a plurality of crucibles 102 passes through the conduction pathway 104 ' transportation in body 112.In the embodiment that comprises many conduction pathways 104; Through 4 transportations of the respective conductive path 10 in body 112, and the deposition material of any one crucible evaporation that will be from a plurality of crucibles 102 mixes each other from the deposition material of each crucible in a plurality of crucibles 102.With conduction pathway 104 heating, make the deposition material that is evaporated send not condensation before from nozzle 106.Can each conduction pathway 104 be heated respectively, thereby realize different temperature at least two of many conduction pathways 104.But each the bar conduction pathway conductively-closed in many conduction pathways 104 makes differing temps can remain in the different conduction pathways 104.Several different methods comprises: near a plurality of crucibles 102 and near many conduction pathways 104, be provided for the moveable element of well heater and lagging material and the space of thermal expansion.
The deposition material that is evaporated from conduction pathway 104 ' or each bar conduction pathway from many conduction pathways 104 be transported to the respective nozzle in a plurality of nozzles 106.In each embodiment; The deposition material of evaporation is from conduction pathway 104 ' or each bar conduction pathway from many conduction pathways 104; Through corresponding one or other structure of many pipes 170, be transported to the respective nozzle of a plurality of nozzles 106, the flowing of these other structure control deposition material.
In each embodiment of method of the present invention, through using the pipe that has variation length, geometrical shape and/or the position of pipe import with respect to conduction pathway 104, the flowing of the deposition material of control through a plurality of nozzles 106.Length, geometrical shape and/or position with respect to the pipe import of conduction pathway 104 are selected as in order to realize certain enabling objective, like even deposit flux and/or high deposition material utilization ratio.
A plurality of nozzles 106 transmit the deposition material that is evaporated then, form the deposit flux thus.Method can comprise the interval of selecting a plurality of nozzles 106, to realize certain enabling objective, like even deposit flux and/or the high deposition material utilization ratio from a plurality of nozzles 106.
Equivalent
Although get in touch the invention that each embodiment has described the applicant, the applicant's invention does not plan to be limited to such embodiment.On the contrary, the applicant's invention comprises various selections example, modification and the equivalent that wherein can form, and as by person of skill in the art will appreciate that, and does not break away from the spirit and the scope of invention.

Claims (41)

1. deposit source, this deposit source comprises:
A) crucible, said crucible is used for comprising deposition material;
B) body, said body comprises conduction pathway, the input part of said conduction pathway is connected on the efferent of said crucible;
C) well heater, said well heater are positioned to and said crucible and said conduction pathway thermal communication, and the raise temperature of said crucible of said well heater makes said crucible that said deposition material is evaporated in the said conduction pathway; And
D) a plurality of nozzles; The input part of each nozzle in said a plurality of nozzle is connected on the efferent of said conduction pathway; Make the deposition material that is evaporated be transported to said a plurality of nozzle through said conduction pathway, thereby the deposition material that is evaporated is discharged from said a plurality of nozzles from said crucible; To form the deposit flux; At least one nozzle in said a plurality of nozzle comprises pipe, and said pipe is positioned adjacent to said conduction pathway, thereby the restriction of said pipe supplies to the amount of the deposition material of the nozzle that comprises said pipe.
2. deposit according to claim 1 source, wherein, the length of said pipe is selected as in order to realize the predetermined deposit flux through the nozzle that comprises said pipe.
3. deposit according to claim 1 source, wherein, said pipe is arranged in the said conduction pathway at least in part.
4. deposit according to claim 1 source; Wherein, At least two nozzles in said a plurality of nozzle comprise pipe; The restriction of said pipe supplies to the amount of the material of its corresponding nozzle, with the length of a corresponding pipe of nozzle in said a plurality of nozzles, be different from said a plurality of nozzles in the length of the corresponding pipe of another nozzle at least.
5. deposit according to claim 1 source; Wherein, At least two nozzles in said a plurality of nozzle comprise pipe; The restriction of said pipe supplies to the amount of the material of its corresponding nozzle, with the geometrical shape of a corresponding pipe of nozzle in said a plurality of nozzles, be different from said a plurality of nozzles in the geometrical shape of the corresponding pipe of another nozzle at least.
6. deposit according to claim 1 source, wherein, the top of at least one nozzle in said a plurality of nozzles extends to the top of said conduction pathway.
7. deposit according to claim 1 source, wherein, the top of at least one nozzle in said a plurality of nozzles extends in the said conduction pathway.
8. deposit according to claim 1 source, wherein, said a plurality of nozzles be uneven at interval.
9. deposit according to claim 1 source, wherein, near the interval of the said a plurality of nozzles the edge of said body, more tightr than interval near said a plurality of nozzles at the center of said body.
10. deposit according to claim 1 source, wherein, the interval of said a plurality of nozzles is selected as in order to realize discharging basic deposition material flux uniformly from said a plurality of nozzles.
11. deposit according to claim 1 source, wherein, the interval of said a plurality of nozzles is selected as in order to promote the utilization ratio of deposition material.
12. deposit according to claim 1 source, wherein, the interval of said a plurality of nozzles is selected in order to the required overlapping of the deposit flux of discharging from said a plurality of nozzles to be provided.
13. deposit according to claim 1 source; Wherein, Certain angle location is pressed with respect to the normal angle of the top surface of said conduction pathway in the output aperture of at least one nozzle in said a plurality of nozzle, and said certain angle is selected in order to the required overlapping of the deposit flux of discharging from said a plurality of nozzles to be provided.
14. deposit according to claim 1 source, wherein, at least one nozzle in said a plurality of nozzles comprises the output aperture, and said output aperture is shaped as in order to transmit uneven deposit flux.
15. deposit according to claim 1 source, wherein, at least one nozzle in said a plurality of nozzles comprises low emissivity coatings on outside surface.
16. deposit according to claim 1 source, wherein, at least one nozzle in said a plurality of nozzles is formed by the material with a kind of thermal conductivity, and it causes basic service temperature uniformly, thereby reduces the splash from the deposition material of nozzle.
17. deposit according to claim 1 source, wherein, said well heater is at least a in RF induction heater, resistance heater and the ir heaters.
18. a deposit source, this deposit source comprises:
A) a plurality of crucibles, said a plurality of crucibles are used for comprising deposition material;
B) body, said body comprises conduction pathway, the input part of said conduction pathway is connected on the efferent of each crucible in said a plurality of crucible;
C) well heater, said well heater are positioned to and said a plurality of crucibles and said conduction pathway thermal communication, and the raise temperature of said a plurality of crucibles of said well heater makes said a plurality of crucible that said deposition material is evaporated in the said conduction pathway; And
D) a plurality of nozzles; The input part of each nozzle in said a plurality of nozzle is connected on the efferent of said conduction pathway; Make the deposition material that is evaporated be transported to said a plurality of nozzle through said conduction pathway, thereby the deposition material that is evaporated is discharged from said a plurality of nozzles from said a plurality of crucibles; To form the deposit flux; At least one nozzle in said a plurality of nozzle comprises pipe, and said pipe is positioned adjacent to said conduction pathway, thereby the restriction of said pipe supplies to the amount of the deposition material of the nozzle that comprises said pipe.
19. deposit according to claim 18 source also comprises thermoscreen, it is heat insulation for the part at least of said a plurality of crucibles that said thermoscreen provides.
20. deposit according to claim 18 source, wherein, at least some crucibles in said a plurality of crucibles comprise the inside crucible that is positioned in the outside crucible.
21. deposit according to claim 18 source, wherein, wherein, said a plurality of crucibles comprise first crucible, second crucible and the 3rd crucible, and this first crucible comprises Cu, and this second crucible comprises In, and the 3rd crucible comprises Ga.
22. deposit according to claim 18 source, wherein, each crucible in said a plurality of crucibles comprises identical deposition material.
23. deposit according to claim 18 source, wherein, said well heater comprises a plurality of well heaters that can individually control, wherein, and corresponding well heater in said a plurality of well heaters and the corresponding crucible thermal communication in said a plurality of crucible.
24. a deposit source, this deposit source comprises:
A) crucible, said crucible is used for comprising deposition material;
B) body, said body comprises conduction pathway, the input part of said conduction pathway is connected on the efferent of said crucible;
C) well heater, said well heater are positioned to and said crucible and said conduction pathway thermal communication, and the raise temperature of said crucible of said well heater makes said crucible that said deposition material is evaporated in the said conduction pathway; And
D) have unevenly spaced a plurality of nozzles; The input part of each nozzle in said a plurality of nozzle is connected on the efferent of said conduction pathway; Make the deposition material that is evaporated be transported to said a plurality of nozzle through said conduction pathway from said crucible; Thereby the deposition material that is evaporated is discharged from said a plurality of nozzles, to form the deposit flux.
25. deposit according to claim 24 source, wherein, near the interval of the said a plurality of nozzles the edge of said body, more tightr than interval near said a plurality of nozzles at the center of said body.
26. deposit according to claim 24 source, wherein, the interval of said a plurality of nozzles is selected as in order to realize discharging basic deposition material flux uniformly from said a plurality of nozzles.
27. deposit according to claim 24 source, wherein, the interval of said a plurality of nozzles is selected as in order to promote the utilization ratio of deposition material.
28. deposit according to claim 24 source, wherein, the interval of said a plurality of nozzles is selected in order to the required overlapping of the deposit flux of discharging from said a plurality of nozzles to be provided.
29. deposit according to claim 24 source, wherein, the top of at least one nozzle in said a plurality of nozzles extends to the top of said conduction pathway.
30. deposit according to claim 24 source, wherein, the top of at least one nozzle in said a plurality of nozzles extends in the said conduction pathway.
31. deposit according to claim 24 source; Wherein, Certain angle location is pressed with respect to the normal angle of the top surface of said conduction pathway in the output aperture of at least one nozzle in said a plurality of nozzle, and said certain angle is selected in order to the required overlapping of the deposit flux of discharging from said a plurality of nozzles to be provided.
32. deposit according to claim 24 source, wherein, at least one nozzle in said a plurality of nozzles comprises the output aperture, and said output aperture is shaped as in order to transmit uneven deposit flux.
33. deposit according to claim 24 source, wherein, at least one nozzle in said a plurality of nozzles is formed by the material with a kind of thermal conductivity, and it causes basic service temperature uniformly, thereby reduces the splash from the deposition material of nozzle.
34. a method that produces the deposit flux, said method comprises:
A) crucible that comprises deposition material is heated, thereby said crucible makes deposition material evaporate that the deposition material that is evaporated transmits through the conduction pathway in body;
B) deposition material that is evaporated is transferred to a plurality of nozzles from said conduction pathway; Said a plurality of nozzle is discharged the deposit flux; The deposition material that is evaporated is through at least one pipe; Said at least one pipe is positioned adjacent to said conduction pathway, in order to limit the amount that supplies to the deposition material of at least one nozzle said a plurality of nozzle from said conduction pathway.
35. method according to claim 34 also comprises: select the size of said at least one pipe, discharge uniform deposit flux to realize each nozzle from said a plurality of nozzles.
36. method according to claim 34 also comprises: select the size of said at least one pipe, to realize the deposition material utilization ratio of height.
37. method according to claim 34 wherein, heats crucible and to comprise a plurality of crucibles are heated.
38. method according to claim 34 also comprises: the interval of confirming said a plurality of nozzles is to realize discharging basic deposition material flux uniformly from said a plurality of nozzles.
39. method according to claim 34 also comprises: the interval of confirming said a plurality of nozzles is to promote the utilization ratio of deposition material.
40. method according to claim 34 also comprises: the interval of confirming said a plurality of nozzles is required overlapping with the deposit flux realizing discharging from said a plurality of nozzles.
41. method according to claim 34; Also comprise: at least one nozzle in said a plurality of nozzle is located, by certain angle with respect to the normal angle of the top surface of said conduction pathway so that the required overlapping of the deposit flux of discharging from said a plurality of nozzles to be provided.
CN2010800599075A 2009-11-30 2010-06-17 Linear deposition source Pending CN102686765A (en)

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PCT/US2010/039093 WO2011065999A1 (en) 2008-12-18 2010-06-17 Linear deposition source

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KR20120101425A (en) 2012-09-13
EP2507403A1 (en) 2012-10-10
TW201142055A (en) 2011-12-01
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CN102712993A (en) 2012-10-03
EP2507402A4 (en) 2013-10-23

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