TW201117683A - A LED array board - Google Patents
A LED array board Download PDFInfo
- Publication number
- TW201117683A TW201117683A TW099117423A TW99117423A TW201117683A TW 201117683 A TW201117683 A TW 201117683A TW 099117423 A TW099117423 A TW 099117423A TW 99117423 A TW99117423 A TW 99117423A TW 201117683 A TW201117683 A TW 201117683A
- Authority
- TW
- Taiwan
- Prior art keywords
- led array
- layer
- insulating layer
- array panel
- aluminum
- Prior art date
Links
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 46
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000002245 particle Substances 0.000 claims abstract description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000007743 anodising Methods 0.000 claims abstract description 5
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 235000006408 oxalic acid Nutrition 0.000 claims description 5
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 claims description 2
- 238000002048 anodisation reaction Methods 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 claims description 2
- 235000019341 magnesium sulphate Nutrition 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract description 7
- 239000011230 binding agent Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000013527 degreasing agent Substances 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229940078494 nickel acetate Drugs 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 150000003378 silver Chemical class 0.000 description 2
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 235000017550 sodium carbonate Nutrition 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 239000004075 cariostatic agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910021392 nanocarbon Inorganic materials 0.000 description 1
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
- H05K3/246—Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
201117683 六、發明說明 【發明所屬之技術領域】 本發明係有關LED陣列板，尤其有關當於熱輻射中 有效時能經由簡單之製程來予以製備的LED陣列板。 【先前技術】 具有諸如良好的有效性、長使用期限等優點之發光二 極體（“LED”）已被使用於各種領域，譬如，當作在電子 器具中具有各種色彩的指示器及當作大型顯示器中之光 源。近來，其應用已被擴大至用於液晶顯示器（“LCD” ） 之背面照明及至各種照明。 多數個LED係排列在用於LCD背面照明或各種照明 之板上，以便施行高亮度及平面式照明。單晶片LED封 裝組件中之熱輻射對於此等諸如LED之耐久性及效率的 品質而言係已知爲很重要之因素。當多數個LED封裝組 件構成板上之陣列時，因爲自該LED封裝組件所產生之 熱重疊於該板的部分區域中，所以經過該板的熱之有效輻 射爲該等關鍵點的其中之一。 藉由材料及結構之選擇的各種解決方法已被提出，以 便有效地將自膠封單LED晶片的單晶片LED封裝組件所 產生之熱輻射出。然而，即使用於熱輻射之架構被施行用 於單晶片LED封裝組件，經過容納多數個呈陣列之LED 封裝組件的基板以供明亮之平面式照明用的熱輻射之問題 應該被解決。 -5- 201117683 爲了在一板上容納多數個LED，通常使用具有基底金 屬基板之金屬芯印刷電路板（“MCPCB”）來代替由覆銅箔 積層板（“CCL”）所製備之PCB。此種MCPCB具有金屬 基底層、絕緣層及一層電極電路層之三層，且該極電路層 係由銅之薄膜所蝕刻及形成的。該絕緣層常常採用充塡有 導熱微粒之環氧樹脂或矽酮樹脂，以經由該板而增加導熱 性。然而，由於樹脂製基底上之絕緣層，此種MCPCB在 熱輻射方面有限制。又，類似於PCB，在MCPCB中藉由 由抗飩劑圖變化、蝕刻等等所組成之光微影技術來形成電 極電路係如此地複雜，並且造成有關大量廢料之處置的問 題。 已藉由應用基板覆晶接合（“ COB”）技術而嘗試直接 在所製造之MCPCB或由金屬層及LTCC( “低溫共燒陶 瓷”）的陶瓷複合板上安裝及封裝多數個LED晶片，該技 術被使用於半導體工業，以便將電路板上之微晶片或晶粒 直接組裝於LED陣列板上。爲了將COB技術應用於LED 陣列封裝組件，應該需要複雜且精密之製程，諸如，在陣 列板上形成個別的溝槽以便收納LED晶片及以便形成反 射器、導電層之金屬化、蝕刻電極之導電層、在安裝LED 晶片之後於該等溝槽之上的封裝及鑄造透鏡。此種複雜度 及精確度需求使得該技術之適應性更低且使得生產成本更 高。對於採用COB技術之陣列板而言，譬如，依據LED 晶片的尺寸及數目之溝槽、反射器及用於LED晶片之電 接點被精確地形成於該板中。即使LED晶片的其中之一 201117683 被錯誤地安裝，整個封裝組件還是可能會故 MCPCB之樹脂絕緣層或陶瓷複合板之相當厚的 有低導熱性之限制。 【發明內容】 [技術問題] 本發明之目的在於提供具有高熱輻射效率之 列板。 本發明之另一目的在於提供具有良好之使用 低生產成本的LED陣列板，這是由於簡單之製 有銅薄膜之層疊（layering)、金屬化或蝕刻，又 之導熱性。 [技術解決方法] 依據本發明，提供有 LED陣列板，其包 層、藉由陽極處理而被單塊地形成在鋁基底層上 絕緣層、及以導電膏而被直接印刷在絕緣層上之 而導電膏包括導電微粒及耐熱黏合劑。該LED 藉由該相同之陽極處理另包括在其背面之另一氧 層，以防止該板彎曲或利用該背面。如果需要 陣列板可另包括以與該正面相同之方式而被形成 氧化鋁絕緣層下方的另一電路層。在本發明中， 意指對LED供電之電極線或控制LEDs之信號線 電路可被用作爲供安裝在該板的正面上之LEDs 障。又， LTCC 具 ,LED 陣 適應性及 程，且沒 具有優異 括鋁基底 之氧化鋁 電路層， 陣列板可 化鋁絕緣 ，該 LED 在該背面 “電路” 。該背面 用的電極 201117683 線或信號線’或視具體情況而可被使用於安裝在該板的背 面上之LED »將該等面的兩側上之電路彼此相連接可藉由 傳統之經由孔洞的傳導技術來予以施行。 在陽極處理之後’如果需要的話，氧化鋁絕緣層係在 印刷電路之前或之後以密封劑來加以密封，以增進絕緣之 絕緣體耐電壓。依據本發明，該LED陣列板可在該電路 上另包括與該電路有相同圖案之金屬電鍍層，以增強傳導 性及可焊性。該LED陣列板可另包括保護絕緣層，以保 護在其上之該層電路層。此保護絕緣層希望係藉由印刷作 爲使接點暴露於該陣列板上之LED的圖案來予以形成。 鋁基底層係由鋁或鋁合金所製成。該鋁基底層之背面 部份可具有被單塊地處理於該鋁基底層上之多數個鰭片， 以擴大與空氣的接觸面積。爲了冷卻，導熱管或熱元件可 被插入或附接該鋁基底層》 在密封之前以導電膏而將電路印刷在氧化鋁層上具有 優點，即爲增強導電膏的黏合劑在該氧化鋁層之多孔表面 上的黏力，並且使該黏合劑用作爲密封劑助劑（sealant aid)。剩餘之孔隙（pore)可以用密封劑來做進一步處理。 密封該氧化鋁層通常係以金屬鹽之溶液而後以煮沸之熱水 來加以施行。 該氧化鋁絕緣層係藉由陽極處理該鋁基底層之表面來 予以形成。更明確地說，在硫酸、草酸、醋酸、磷酸或鉻 酸的溶液中，最佳是在草酸溶液中施加正電壓於鋁板加速 氧化，且造成形成氧化鋁層於該鋁板的表面上。如果需要 -8 - 201117683 的話，諸如硫酸銅、乳酸、檸檬酸、醋酸、硫酸鋁、硫酸 鎂等等之添加劑可被添加至該草酸溶液。該氧化鋁絕緣層 可被形成爲圖案或藉由遮蔽該鋁基底層而被局部地形成在 此鋁基底層上。在該鋁基底層之其背面處的氧化鋁絕緣層 可藉由相同之陽極處理來予以形成，以防止該板彎曲或利 用該背面。如此所形成之氧化鋁層係非常穩固的、耐腐蝕 及多孔的。因爲它們使該層之電絕緣惡化，所以直徑約爲 數十奈米（nm)之孔隙應被密封。然而，如果需要的話，在 將電路印刷於該氧化鋁層上之後，密封可被省略或可被施 行。 用以形成電路之導電膏成分較佳包括0.01至96重量 百分比（w%)之導電微粒、0.5至96重量百分比w%之耐熱 黏合劑、且剩餘爲有機溶劑。該耐熱黏合劑譬如爲聚丙烯 酸酯、聚氨基甲酸乙酯、聚丙烯、聚醯亞胺或其衍生物。 在此之中，“導電微粒”意指導電材料之微粒。該材料沒 有任何限制，只要其當固態時具有導電性。該材料爲金屬 或包括，諸如碳黑及石墨之含碳微粒的非金屬。導電微粒 譬如爲金、鋁、銅、銦、銻、鎂、鉻、錫、鎳、銀、鐵、 鈦及其合金之微粒。作爲含碳微粒，譬如有天然的片狀石 墨、膨脹石墨、石墨烯、碳黑、奈米碳、及奈米碳管，微 粒之形狀，其並未被特別地限制譬如爲平坦的、纖維的或 奈米尺寸的。此種微粒可被單獨使用或組合使用。該等導 電微粒較佳係直徑爲0.1至10微米（ym)之銀片晶。 直接印刷包括網版印刷、膠版印刷、滾網印刷、凹版 -9 - 201117683 印刷、平凸印刷'及噴墨印刷。作爲電路的圖案而被印刷 在該氧化鋁絕緣層上之導電膏係藉由加熱或光輻射來予以 硬化。導電膏中之黏合劑成分固定該等導電微粒，且有助 於它們形成電路及藉由局部充塡該氧化鋁絕緣層之孔隙增 加該絕緣。爲了增進傳導性，該電路可藉由施加電壓至該 被印刷之電路而被金屬電鍍於電鏟槽中。用於電鍍之金屬 較佳爲鎳或銅。 保護絕緣層可當作使接點暴露於LEDs之圖案而被印 刷在該電路的上方，而熱固性樹脂黏合劑或清漆來保護該 電路層。該等接點並不僅限制於電接點。該等接點可被形 成在該原有的氧化鋁層上。 具有引線之完成或半完成的LED封裝組件依據本發 明藉由包括焊接及SMT(表面黏著技術）,的技藝中所習知之 各種技術而被安裝在該LED陣列板上。譬如，暴露於該 陣列板上之接點被塗以錫膏（solder cream)，且LED封裝 組件之引線係位在該等接點上，而後藉由焊料之回焊而被 焊接。在以錫膏焊接及塗覆該等接點之前，該等接點可以 用諸如OSP(有機保焊劑）、ENIG(無電電鍍鎳及浸鍍金）與 ENEPIG (無電電鍍鎳無電電鍍鈀及浸鍍金）之底層塗劑加 予以處理，以增進黏附力。 [有利的效果] 本發明藉由在該基底層上單塊地形成絕緣層而提供具 有用於熱輻射之有效結構的LED陣列板，其可被用作爲 -10- 201117683 用於高亮度之密集陣列板。此外’於該L E D陣列板中， 藉由以包括導電微粒及耐熱黏合劑之導電膏直接印刷而與 上述之板結構整合而形成電極電路，將簡化製程、縮短製 造成本及時間、及使浪費減至最小，且同時該導電膏之黏 合劑增加氧化鋁層之絕緣性及氧化鋁層上之黏附力。 【實施方式】 在下文中，本發明係藉由例子及所附圖式而被詳細地 敘述。 例1 鋁板1(305毫米X25 5毫米xl毫米）被浸入藉由金陽化 工（Jinyoung)所製造之由 NaOH、NaHC03、Na2C03、界面 活性劑及水所組成的除脂劑SZ-9中，且在攝氏5 0-6 0度 被除脂達1 5分鐘之久。已除脂之鋁板1被清洗，在大約 攝氏60度浸入10公克/公升濃度之NaOH水溶液達3分 鐘之久，而後以水清洗。該鋁板1在室溫被浸入1 〇%硫酸 水溶液，且藉由以0.5 A/dm2之電流密度施加正電壓至該 鋁板1達60分鐘之久，在該鋁板1之正面及背面上獲得 到氧化鋁層2、6，其分別具有33 ·2及3 1 .7微米之厚度。 具有1.97微米之平均微粒尺寸的650公克之銀片晶 粉、240公克之環氧樹脂黏合劑被徹底地混合在一起而成 爲1公斤之銀膏，該黏合劑係藉由在正常之松油醇中稀釋 由錦湖（Keumho)P&B化學株式會社所製造之KER 1 009的 -11 - 201117683 環氧樹脂至50重量百分比濃度及Butyl Cell〇S〇lve®(2-丁 氧基乙醇之商標）之剩餘量所製備。該銀膏成分當作電極 電路3而被印刷在該鋁板之氧化鋁層2上。然後，該鋁板 在攝氏190度被熱處理達12分鐘之久，以使該電極電路 之黏附力、硬度及表面電阻分別爲5B、5H及8.6X10·5歐 姆·公分。 爲了密封，具有電路被印刷於其上之鋁板被浸入2公 克/公升濃度之醋酸鎳水溶液達5分鐘之久，而後在攝氏 95度的蒸餾水中被處理達1〇分鐘之久。該密封鋁板的正 面及背面間之耐絕緣電壓係藉由 CHROMA AC/DC/IR HIPOT測試器機型1 9052而被測量爲2.71Kv/mm。 該鋁板藉由由首爾化學硏究中心所製成之絲網印刷機 以SCR- 1 000W、熱固性樹脂防焊劑而被印刷，以使在電 極電路上形成保護絕緣層5，而後在攝氏150度被熱處理 達50分鐘之久。 電接點12被塗以錫膏。由首爾半導體公司所製成之 1 608型的LED封裝組件1 1係排成陣列地位於該已完成之 LED陣列板10的露出電接點12上，且藉由回焊製程而被 焊接。 例2 鋁板1 (3 05毫米X25 5毫米xl毫米）被浸入由金陽化工 所製造之由NaOH、NaHC03、Na2C03、界面活性劑及水 所組成的除脂劑SZ-9中，且在攝氏50-60度被除脂達15 -12- 201117683 分鐘之久。已除脂之鋁板1被清洗，在大約攝氏60度被 浸入10公克/公升濃度之NaOH水溶液達3分鐘之久，而 後以水清洗。該鋁板在室溫下被浸入1公升水中之5 0公 克草酸、10公克硼酸' 3公克乳酸、及丨公克硫酸鎂的水 溶液中’且藉由以0.5A/dm2之電流密度施加正電壓於該 鋁板1達60分鐘之久，在該鋁板1之正面及背面上獲得 到氧化鋁層2、6，其分別具有3 3.6及3 2 · 5微米之厚度。 具有1.97微米之平均微粒尺寸的650公克之銀片晶 粉' 240公克之環氧樹脂黏合劑被徹底地混合在一起而成 爲1公斤之銀膏，該黏合劑係藉由在正常之松油醇中稀釋 由錦湖P&B化學株式會社所製造之KER1009的環氧樹脂 至50重量百分比濃度及Butyl Cellosolve®(2-丁氧基乙醇 之商標）之剩餘量所製備。該銀膏成分當作電極電路3而 被印刷在該鋁板之氧化鋁層2上。然後，該鋁板在攝氏 190度被熱處理達12分鐘之久，以使該電極電路之黏附 力、硬度及表面電阻分別爲5B、5H及8.6χ10_5歐姆.公 分。 爲了密封，具有電路被印刷於其上之鋁板被浸入5公 克/公升濃度之氟化鎳水溶液達20分鐘之久，而後在攝氏 9〇度的醋酸鎳水溶液中被處理達20分鐘之久。該密封鋁 板的正面及背面間之耐絕緣電壓係藉由 CHROMA AC/DC/IR HIPOT 測試器機型 1 90 5 2 而被測量爲 2-66KWmm。在電接點處經過該板之熱傳導性爲 5 6.49W/m · k。用於本發明之板的熱傳導性係優於一般低 -13- 201117683 於2.0W/m · k的MCPCB之熱傳導性。 被密封之鋁板係浸入1公升水中之220公克硫酸銅' 63公克硫酸鹽、l〇PPm氯及由IBC所製造而當作防銹劑 的 10 公克 5007-MU、0.5 公克 5000-A、及 〇·5 公克 5007- Β的電鍍槽中，並藉由以5 A/dm2之電流施加達30分鐘之 久，且因而獲得具有5M 0·6歐姆·公分之表面電阻的3 微米厚之銅電鍍層4。 鋁板係藉由由首爾化學硏究中心所製成之絲網印刷機 以SCR- 1 000W、熱固性樹脂防焊劑而被印刷，以使在該 電極電路上形成保護絕緣層5，而後在攝氏150度被熱處 理達50分鐘之久。 該等電接點12被塗以錫膏。藉由由首爾半導體所製 成之1 6 0 8型的L E D封裝組件1 1係排成陣列地位於該已 完成之LED陣列板10的露出電接點12上，且藉由回焊 製程而被焊接。該黏附強度被測量爲2.67Kgf。 【圖式簡單說明】 圖1係一槪念性立體視圖，其顯示具體化本發明的 LED陣列板之諸分開層。 圖2係圖1中之L E D陣列板的槪要組裝立體圖。 【主要元件符號說明】 1 ;鋁板 2 ;氧化鋁層 14· 201117683 3 ;電極電路 4 ;電鍍層 5 ;保護絕緣層 6 ;背面氧化鋁層 1 0 ; L E D陣列板 1 1 ; L E D封裝組件 1 2 ;電接點BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED array panel, and more particularly to an LED array panel which can be prepared by a simple process when it is effective in heat radiation. [Prior Art] Light-emitting diodes ("LEDs") having advantages such as good effectiveness, long life, and the like have been used in various fields, for example, as indicators and colors having various colors in electronic appliances. A light source in a large display. Recently, its application has been extended to backlighting for liquid crystal displays ("LCD") and to various illuminations. Most of the LEDs are arranged on the board for LCD backlighting or various illuminations for high brightness and planar illumination. The heat radiation in a single-chip LED package assembly is known to be a very important factor for such qualities as the durability and efficiency of the LED. When a plurality of LED package components constitute an array on a board, since heat generated from the LED package assembly overlaps a portion of the board, heat effective radiation passing through the board is one of the key points. . Various solutions have been proposed by material and structure selection to effectively radiate heat generated from a single-chip LED package assembly of a self-sealing LED wafer. However, even if the architecture for thermal radiation is implemented for a single-chip LED package assembly, the problem of heat radiation through a substrate containing a plurality of arrayed LED package components for bright planar illumination should be addressed. -5- 201117683 In order to accommodate a plurality of LEDs on a single board, a metal core printed circuit board ("MCPCB") having a base metal substrate is typically used in place of the PCB fabricated from a copper clad laminate ("CCL"). The MCPCB has three layers of a metal base layer, an insulating layer and an electrode circuit layer, and the pole circuit layer is etched and formed by a film of copper. The insulating layer is often made of an epoxy resin or an fluorenone resin filled with thermally conductive particles to increase thermal conductivity through the plate. However, such MCPCBs have limitations in terms of heat radiation due to the insulating layer on the resin substrate. Further, similar to the PCB, the formation of the electrode circuit by the photolithography technique consisting of the change of the anti-caries agent pattern, the etching, and the like in the MCPCB is so complicated and causes a problem concerning the disposal of a large amount of waste. Attempts have been made to mount and package a plurality of LED wafers directly on a fabricated MCPCB or a ceramic composite board from a metal layer and LTCC ("low temperature co-fired ceramic") by applying a substrate flip chip bonding ("COB") technique. Technology is used in the semiconductor industry to assemble microchips or dies on a circuit board directly onto an LED array board. In order to apply COB technology to LED array package assemblies, complex and sophisticated processes, such as forming individual trenches on the array board to accommodate the LED wafers and to form reflectors, metallization of the conductive layers, and conductive electrodes. A layer, a package and a cast lens over the trenches after mounting the LED wafer. This complexity and precision requirements make the technology less adaptable and costly to produce. For array boards using COB technology, for example, trenches, reflectors, and electrical contacts for LED wafers are precisely formed in the board depending on the size and number of LED chips. Even if one of the LED chips 201117683 is incorrectly installed, the entire package may still have a relatively thick thermal insulation limit of the resin insulating layer or ceramic composite board of the MCPCB. [Disclosure] [Technical Problem] An object of the present invention is to provide a column having high heat radiation efficiency. Another object of the present invention is to provide an LED array panel having a good use and low production cost due to simple layering, metallization or etching of copper film, and thermal conductivity. [Technical Solution] According to the present invention, there is provided an LED array panel in which a cladding layer is formed monolithically on an aluminum base layer by anodization, and is directly printed on an insulating layer with a conductive paste. The conductive paste includes conductive particles and a heat resistant adhesive. The LED is further provided with another oxygen layer on the back side thereof by the same anode treatment to prevent the sheet from being bent or utilizing the back surface. If desired, the array board may additionally comprise another circuit layer underlying the aluminum oxide insulating layer in the same manner as the front side. In the present invention, it is meant that the electrode line for powering the LED or the signal line circuit for controlling the LEDs can be used as an LED barrier for mounting on the front side of the board. Moreover, the LTCC has an LED array adaptability and process, and does not have an alumina circuit layer with an excellent aluminum substrate. The array plate can be made of aluminum insulation, and the LED is "circuit" on the back side. The electrode for the back side 201117683 line or signal line 'or as the case may be used for LEDs mounted on the back side of the board » the circuits on both sides of the sides are connected to each other by conventional via holes The conduction technology is implemented. After the anodizing, the alumina insulating layer is sealed with a sealant before or after the printed circuit, if necessary, to enhance the withstand voltage of the insulating insulator. According to the present invention, the LED array panel can further include a metal plating layer having the same pattern as the circuit on the circuit to enhance conductivity and solderability. The LED array panel can additionally include a protective insulating layer to protect the layer of circuitry thereon. The protective insulating layer is desirably formed by printing as a pattern of LEDs that expose the contacts to the array board. The aluminum base layer is made of aluminum or an aluminum alloy. The back portion of the aluminum base layer may have a plurality of fins monolithically treated on the aluminum base layer to expand the contact area with air. For cooling, the heat pipe or the heat element can be inserted or attached to the aluminum base layer. It is advantageous to print the circuit on the aluminum oxide layer with a conductive paste before sealing, that is, to enhance the adhesive of the conductive paste in the aluminum oxide layer. The adhesion on the porous surface and the use of the adhesive as a sealant aid. The remaining pores can be further treated with a sealant. Sealing the alumina layer is usually carried out as a solution of a metal salt followed by boiling hot water. The alumina insulating layer is formed by anodizing the surface of the aluminum base layer. More specifically, in a solution of sulfuric acid, oxalic acid, acetic acid, phosphoric acid or chromic acid, it is preferred to apply a positive voltage to the aluminum plate for accelerated oxidation in the oxalic acid solution, and to cause formation of an aluminum oxide layer on the surface of the aluminum plate. If -8 - 201117683 is required, an additive such as copper sulfate, lactic acid, citric acid, acetic acid, aluminum sulfate, magnesium sulfate or the like may be added to the oxalic acid solution. The aluminum oxide insulating layer may be formed into a pattern or partially formed on the aluminum base layer by masking the aluminum base layer. An alumina insulating layer on the back side of the aluminum base layer can be formed by the same anodizing treatment to prevent the sheet from being bent or used. The alumina layer thus formed is very stable, corrosion resistant and porous. Since they deteriorate the electrical insulation of the layer, pores having a diameter of about several tens of nanometers (nm) should be sealed. However, if desired, the seal can be omitted or can be performed after printing the circuit on the aluminum oxide layer. The conductive paste component for forming the circuit preferably comprises 0.01 to 96% by weight (w%) of the conductive fine particles, 0.5 to 96% by weight of the w% of the heat resistant adhesive, and the remainder is an organic solvent. The heat resistant adhesive is, for example, a polyacrylate, a polyurethane, a polypropylene, a polyimine or a derivative thereof. Herein, "conductive particles" mean the particles of the electrically conductive material. The material is not limited as long as it is electrically conductive when it is in a solid state. The material is a metal or a non-metal including carbonaceous particles such as carbon black and graphite. The conductive particles are, for example, particles of gold, aluminum, copper, indium, bismuth, magnesium, chromium, tin, nickel, silver, iron, titanium, and alloys thereof. As the carbonaceous particles, such as natural flake graphite, expanded graphite, graphene, carbon black, nanocarbon, and carbon nanotubes, the shape of the particles is not particularly limited, for example, flat, fibrous. Or nanometer size. Such microparticles can be used alone or in combination. The conductive particles are preferably silver platelets having a diameter of from 0.1 to 10 micrometers (ym). Direct printing includes screen printing, offset printing, web printing, gravure -9 - 201117683 printing, plano-convex printing, and inkjet printing. The conductive paste printed on the alumina insulating layer as a pattern of the circuit is hardened by heating or light irradiation. The binder component of the conductive paste fixes the conductive particles and helps them form a circuit and increases the insulation by partially filling the pores of the alumina insulating layer. To enhance conductivity, the circuit can be metal plated into the shovel by applying a voltage to the printed circuit. The metal used for electroplating is preferably nickel or copper. The protective insulating layer can be printed on the circuit as a pattern that exposes the contacts to the LEDs, and a thermosetting resin adhesive or varnish protects the circuit layer. These contacts are not limited to electrical contacts. The contacts can be formed on the original alumina layer. A completed or semi-finished LED package assembly having leads is mounted on the LED array panel in accordance with the present teachings by various techniques known in the art including soldering and SMT (Surface Adhesion Technology). For example, the contacts exposed to the array plate are coated with solder cream, and the leads of the LED package components are tied to the contacts and then soldered by solder reflow. Prior to soldering and coating the contacts, the contacts may be used such as OSP (Organic Soldering Agent), ENIG (Electroless Nickel Plating and Dip Gold Plating) and ENEPIG (Electroless Electroplated Nickel Electroless Plating Palladium and Dip The base coating of gold plating is treated to improve adhesion. [Advantageous Effects] The present invention provides an LED array panel having an effective structure for heat radiation by forming an insulating layer monolithically on the base layer, which can be used as an intensive high-intensity -10-201117683 Array board. In addition, in the LED array panel, by forming a electrode circuit by directly printing with a conductive paste including conductive particles and a heat-resistant adhesive to form an electrode circuit, the process, the manufacturing cost, the time, and the waste are reduced. To the minimum, and at the same time, the adhesive of the conductive paste increases the insulation of the aluminum oxide layer and the adhesion on the aluminum oxide layer. [Embodiment] Hereinafter, the present invention is described in detail by way of examples and the accompanying drawings. Example 1 Aluminum plate 1 (305 mm X 25 5 mm x 1 mm) was immersed in a degreaser SZ-9 consisting of NaOH, NaHC03, Na2CO3, a surfactant and water manufactured by Jinyoung Chemical Co., Ltd. It is degreased for 15 minutes at 50 degrees Celsius Celsius. The degreased aluminum plate 1 was cleaned, immersed in a 10 g/liter NaOH aqueous solution at about 60 ° C for 3 minutes, and then washed with water. The aluminum plate 1 was immersed in a 1 〇% sulfuric acid aqueous solution at room temperature, and oxidation was obtained on the front and back sides of the aluminum plate 1 by applying a positive voltage to the aluminum plate 1 at a current density of 0.5 A/dm 2 for 60 minutes. The aluminum layers 2, 6 have a thickness of 33 · 2 and 3 1. 7 microns, respectively. 650 grams of silver platelet powder with an average particle size of 1.97 microns, 240 grams of epoxy resin binder are thoroughly mixed together to form a 1 kg silver paste, which is based on normal terpineol Diluted -11 - 201117683 epoxy resin of KER 1 009 manufactured by Keumho P&B Chemical Co., Ltd. to 50% by weight and the trademark of Butyl Cell〇S〇lve® (2-butoxyethanol) The remaining amount is prepared. This silver paste component is printed on the aluminum oxide layer 2 of the aluminum plate as the electrode circuit 3. Then, the aluminum plate was heat-treated at 190 ° C for 12 minutes so that the adhesion, hardness, and surface resistance of the electrode circuit were 5B, 5H, and 8.6X10·5 ohm·cm, respectively. For sealing, the aluminum plate having the circuit printed thereon was immersed in an aqueous solution of nickel acetate at a concentration of 2 g/liter for 5 minutes, and then treated in distilled water at 95 degrees Celsius for 1 minute. The insulation resistance between the front side and the back side of the sealed aluminum plate was measured to be 2.71 Kv/mm by the CHROMA AC/DC/IR HIPOT tester model 1 9052. The aluminum plate was printed with a SCR-1 000W, thermosetting resin solder resist by a screen printing machine made by the Seoul Chemical Research Center to form a protective insulating layer 5 on the electrode circuit, and then was 150 degrees Celsius. Heat treatment for 50 minutes. The electrical contacts 12 are coated with solder paste. A 1 608 type LED package assembly 11 made by Seoul Semiconductor Co., Ltd. is arranged in an array on the exposed electrical contacts 12 of the completed LED array panel 10, and is soldered by a reflow process. Example 2 Aluminum plate 1 (3 05 mm X 25 5 mm x 1 mm) was immersed in a degreaser SZ-9 consisting of NaOH, NaHC03, Na2CO3, surfactant and water manufactured by Jinyang Chemical Co., Ltd., and at 50 ° C. -60 degrees is degreased for 15 -12-201117683 minutes. The degreased aluminum plate 1 was washed, immersed in a 10 g/liter aqueous NaOH solution at about 60 ° C for 3 minutes, and then washed with water. The aluminum plate was immersed in 50 liters of oxalic acid, 10 gram of boric acid '3 gram of lactic acid, and yttrium magnesium sulfate in 1 liter of water at room temperature' and applied a positive voltage at a current density of 0.5 A/dm 2 The aluminum plate 1 was obtained for 60 minutes, and the aluminum oxide layers 2, 6 were obtained on the front and back sides of the aluminum plate 1, respectively having a thickness of 3 3.6 and 3 2 · 5 μm. 650 grams of silver platelet powder with an average particle size of 1.97 microns '240 grams of epoxy resin binder is thoroughly mixed together to form a 1 kg silver paste, which is based on normal terpineol The epoxy resin of KER1009 manufactured by Kumho P&B Chemical Co., Ltd. was diluted to a concentration of 50% by weight and the remaining amount of Butyl Cellosolve® (trademark of 2-butoxyethanol). This silver paste component is printed on the aluminum oxide layer 2 of the aluminum plate as the electrode circuit 3. Then, the aluminum plate was heat-treated at 190 ° C for 12 minutes so that the adhesion, hardness, and surface resistance of the electrode circuit were 5B, 5H, and 8.6 χ 10_5 ohm. For sealing, the aluminum plate having the circuit printed thereon was immersed in an aqueous solution of nickel fluoride at a concentration of 5 g/liter for 20 minutes, and then treated in an aqueous solution of nickel acetate at 9 Torr for 20 minutes. The insulation resistance between the front and back sides of the sealed aluminum plate was measured to be 2-66 KWmm by the CHROMA AC/DC/IR HIPOT tester model 1 90 5 2 . The thermal conductivity through the plate at the electrical contacts is 5 6.49 W/m · k. The thermal conductivity of the panels used in the present invention is superior to the thermal conductivity of MCPCBs typically at -13-201117683 at 2.0 W/m·k. The sealed aluminum plate is immersed in 220 gram of copper sulphate in 1 liter of water '63 grams of sulphate, l 〇 PPm chlorine and 10 grams of 5007-MU, 0.5 gram 5000-A, and 〇 made by IBC as rust inhibitor 5 g of 5007- Β electroplating bath and applied by a current of 5 A/dm 2 for 30 minutes, and thus a 3 μm thick copper plating layer having a surface resistance of 5 M 0·6 ohm·cm 4. The aluminum plate is printed with a SCR-1 000W, thermosetting resin solder resist by a screen printer made by the Seoul Chemical Research Center to form a protective insulating layer 5 on the electrode circuit, and then at 150 degrees Celsius. Heat treated for 50 minutes. The electrical contacts 12 are coated with solder paste. The LED package assembly 1 1 made of Seoul Semiconductor is arranged in an array on the exposed electrical contacts 12 of the completed LED array panel 10, and is reprocessed by a reflow process. welding. The adhesion strength was measured to be 2.67 Kgf. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a phantom perspective view showing separate layers embodying the LED array panel of the present invention. 2 is a perspective view showing a schematic assembly of the L E D array board of FIG. 1. [Main component symbol description] 1; aluminum plate 2; aluminum oxide layer 14·201117683 3; electrode circuit 4; plating layer 5; protective insulating layer 6; back aluminum oxide layer 1 0; LED array plate 1 1; LED package assembly 1 2 Electric contact
Claims (1)
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|---|---|---|---|
| KR20090050321 | 2009-06-08 |
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| TW201117683A true TW201117683A (en) | 2011-05-16 |
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| TW099117423A TW201117683A (en) | 2009-06-08 | 2010-05-31 | A LED array board |
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| KR (2) | KR101027422B1 (en) |
| TW (1) | TW201117683A (en) |
| WO (1) | WO2010143829A2 (en) |
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| KR101242218B1 (en) * | 2011-01-07 | 2013-03-11 | 에이텍 테크놀로지 코포레이션 | Lighting device and method for forming the same |
| US9046250B2 (en) * | 2011-03-03 | 2015-06-02 | Koninklijke Philips N.V. | Circuit board assembly that includes plural LEDs electrically connected to underlying pads |
| AT12741U1 (en) * | 2011-03-10 | 2012-10-15 | Forster Verkehrs Und Werbetechnik Gmbh | ARRANGEMENT WITH ELECTRICAL / ELECTRONIC COMPONENTS |
| KR20150074421A (en) * | 2013-12-24 | 2015-07-02 | 엘지이노텍 주식회사 | printed circuit board AND LUMINOUS DEVICE |
| CN106887497A (en) * | 2015-12-15 | 2017-06-23 | 易美芯光（北京）科技有限公司 | A kind of low thermal resistance LED light source |
| KR101741068B1 (en) | 2017-01-18 | 2017-05-29 | 주식회사 웰파인 | Method manufacturing of mask for facial therapy |
| KR102359700B1 (en) | 2020-05-29 | 2022-02-08 | 홍준표 | LED module using PCB pattern directly for heat sink |
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| KR920006017B1 (en) * | 1990-01-06 | 1992-07-25 | 장정훈 | Manufacturing process for printed circuit board |
| KR950001266B1 (en) * | 1992-07-30 | 1995-02-15 | 이장범 | Method of manufacturing aluminum circuit board |
| US7196459B2 (en) * | 2003-12-05 | 2007-03-27 | International Resistive Co. Of Texas, L.P. | Light emitting assembly with heat dissipating support |
| US20060097385A1 (en) * | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
| JP2008091459A (en) * | 2006-09-29 | 2008-04-17 | Rohm Co Ltd | Led illumination apparatus and manufacturing method thereof |
| KR20070039006A (en) * | 2007-03-22 | 2007-04-11 | 백종수 | Aluminium based insulated metal substrate for metal pcb |
| JP5093840B2 (en) | 2007-05-14 | 2012-12-12 | 株式会社住友金属エレクトロデバイス | Multilayer wiring board for mounting light emitting device and method for manufacturing the same |
| TWI377656B (en) * | 2007-09-19 | 2012-11-21 | Method for manufacturing packaging substrate |
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| KR20100131918A (en) | 2010-12-16 |
| KR101027422B1 (en) | 2011-04-11 |
| WO2010143829A2 (en) | 2010-12-16 |
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