TW201103121A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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TW201103121A
TW201103121A TW098123043A TW98123043A TW201103121A TW 201103121 A TW201103121 A TW 201103121A TW 098123043 A TW098123043 A TW 098123043A TW 98123043 A TW98123043 A TW 98123043A TW 201103121 A TW201103121 A TW 201103121A
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light
substrate
emitting
emitting element
layer
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TW098123043A
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TWI495084B (zh
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Chia-Liang Hsu
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Epistar Corp
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Priority to US12/831,647 priority patent/US20110006312A1/en
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Priority to US14/265,102 priority patent/US8987017B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

Description

201103121 六、發明說明： 【發明所屬之技術領域】 件’特暇—麵於發光元件之基板具有一第一主 其中複數個發光疊 ΐ Γί—ίίί要表面H主要表面上有複數個發光疊 層，而第二主要表面上具有至少一電子元件， 層與整流元件形成電性連接。 【先前技術】
/ #f^f_ight_emitting diode，LED)的發光原理是利用電子 釋二，型半導體間移動的能量差’以光的形式將能量 土 4 = 7的發光原理係有別於白熾燈發熱的發光原理，因此發 ，二:亟體被稱為冷光源。此外，發光二極體具有高敵性、壽命 炒耗電^低等優點’因此現今的卿市場對於發光二極 望’將其視域—代賴明卫具，6逐漸取代傳統光源， 醫療 ，且，用於各種領域，如交通號誌'背光模組、路燈照明、 設備等。 第1圖為習知用於交流電之發光元件結構示意圖，如第J圖所 不，發光7G件100至少包含一基板1〇、複數個發光二極體單元12 位於基板1G上Φ魏電路Α和轉Β後反向並聯，以及二電極 14/16位於基板1〇上，與複數個發光二極體單元12形成電性連 接。當交流電電流由電極14流入發光元件削時，電流流 A，且使電路Α上的發光二極體單元12發出絲； 流電電流由電極16流入發光元件卿時，電流流經電路Β，並且 使電路Β上的發光二極體單元12發出光線。 此外，上狀光電元件100更可以進_：步地與其他元件組合連 接以形成一光電裝置(photoelectric apparatus)。第2圖為習知之光 電裝置結構示意圖，如第2圖所示，一光電裝置2〇〇包含一具有 至少一電路202之次載體(sub-mount)2〇 ;至少一焊料(s〇_22位 於上述次載體20上，藉由此焊料22將上述光電元件腳黏結固 201103121 定於次載體20上並使光電元件100之基板1〇與次載體2〇上之電 路202形成電連接；以及，一電連接結構24，以電性連接光電元 件100之電極16與次载體20上之電路202 ;其申，上述之吹葡辨 包含導線架㈣㈣或大尺寸鑲嵌Ygm substrate)，以方便發光裝置2〇〇之電路規劃並提高其散熱效果。 雖然，上述之發光元件100設計可直接應用於交流電源上，秋 而同一時間内卻僅部份的發光二極體單元12能發出光線，往往^ 成發光元件上發光區域之浪費。 【發明内容】 本發明之主要目的係提供一種發光元件，包含：一基板，具有 要表面與—第二主要表面；複數個發光4層，彼此^隔 此基板之第—主要表面，其中上述發光4層之間係以-^電連接結構形成電連接；以及至少—電子元件，位於基板之 弟二主要表面’並藉由-第二電性連接結構自基板之第一主要表 面至延伸基板之第二主要表面以電性連接發光疊層及電子元件。 ^發明之另一目的在於提供一種發光元件，包含·· 一基板，具 主ΐΐί與—第二主要表面；複數個發光疊層，位於此 基，之第-主要表面；以及至少—橋式整流树以及至少一被動 凡，位於此基板之第二主要表面，其中上述 之橋式整流元制形成紐連接。 H層興上这 本發明之再一目的在於提供一發光元件，至少且 豆 =複數，發光疊層與至少—電子元件分別位於上述 要表面之複數個發光疊層與第二主要表面之電2 件係藉由基板上之金屬柱(plug)或金屬導線相連接。
本發明之又-目的在於提供—發光树，至少 — A ^複疊層與至少-電子元件分別位於上述基^上下^ 面太t此提高發光元件之散熱效率並且增加發光ΐίίΐ靠度 發明之又-目的在於提供發光元件係將整流元件、電阻、電 201103121 感、電容等f子元件、或導歸等非以發光為主要目的之元件設 置於基气之第二主要表面，並且發光疊層設置於基板之第一主要 表面，藉此可將發光元件中發光疊層所在的整個表面做 面，以減少發光面積之浪費。 【實施方式】 以下配合圖式說明本發明之實施例。
第3A圖為本發明一實施例之側視結構示意圖，而第3b圖為 本發明實施例之電路結構示意圖；如第3A圖與第3B圖所示，發 光7L件300包含··一基板3〇，具有一第一主要表面3〇2與一第二 304 ;複數個發光疊層32，彼此間隔地分佈於此基板3〇 表面3〇2，其中上述發光疊層32之間係以複數第一電 m二1 2〇形成電連接；以及至少一整流元件34，位於此基板 •^之第二主要表面304，其中上述之整流元件34包含複數 f 34G’此半導體疊層34Q藉由_第二電連接結構％形成電性 連接並排列成橋式迴路，此外，上述之發光疊層32與上述之整流 元件34間藉由一第電性連接結構36形成電性連接。 此外，上述之發光元件300更包含至少一位於第二主要表面 ^4之接·(bump pad)38，分職上狀整流元件％以及交流 電源提供器(圖未示)形成電連接，當交流電經由接觸墊％流入發 光兀件300時，會經由位於第二主要表面3〇4上之複數半導體疊 層340排列成橋式迴路之整流元件34將交流電轉換為直流電再 經過第三電連接結構36 ’將電流傳送至發光疊層32中。其中第三 電，接气構36包含金屬柱填充於穿透基板3〇之穿孔或導線自基 板〇之第一主要表面302延伸至第二主要表面3〇4。 於上述之發光元件3⑻中，基板3〇之材質包含藍寶石 (^apphire)、氮化鋁(A1N)、玻璃(giass)或鑽石(diam〇nd)等絕緣材料； ^板亦可以是-單層結構’實質上以—單―材質組成。於本實 施列中基板30係藍寶石材質之單層基板；發光疊層32至少包含 二位於基板30上之第一導電型半導體層322、一位於第一導電型 半導體層322上之發光層324以及一位於發光層324上之第二導 201103121 電型半導體層326 ’其中發光疊層32之材質則可以選自包含紹 (A1)、鎵(Ga)、銦(In)、氮⑼、碌(P)或砷(As)之半導體物質，例如 氮化鎵(GaN)系列材料或磷化鋁鎵銦(A1GaInp)系列材料；於本實施 例中’發光叠層32係以有機金屬化學氣相沉積技街所形成的，每 一個發光疊層32係以微影蝕刻技術形成具有部分裸露之第一導電 型半導體>1 322，社狀第-電連接結構32()齡顺發光疊層 32之第導電型半導體層322以及相鄰發光疊層32之第二導電型 半導體層326形成串聯連接。 弟 再者，上述組成整流元件34之半導體疊層34〇包含由有機金
，化學氣相沉積(M0CVD)技術與微影蝕刻技術所形成複數個發 ，一極體（Light emitting diode)、基納二極體(Zener Di〇de)、或 蕭,基二極體CSchottkyDiode}之結構，其材質係選自包含冚^族 ·元素，例如氮化鎵(GaN)系列材料、磷化鋁鎵錮 (AlGalnP)系列材料、或矽。 恭/二電連接結構320可以如第4A圖所示包含一填充於相鄰之 間之絕緣層迦’賜止相鄰之發光疊層32之間 “ 3ί情形’以及一金屬層3綱位於上述之絕緣層3202上 並且/、相郇之發光疊層32形成電性連接；此外，第一電遠 如第4Β圖所示係一金屬線，金屬線之兩端分別與相^之 ΐ所ϋ2 電性接觸。而第二電連接結構342可以如第认 tL Γ ίΐ於相鄰之半導體疊層34Q之間之絕緣層3422， =ΐ=ίί體疊層之間形成短路，以及-金屬請4 性連i ίί ίϋί ’並且與相鄰之料體叠層340形成電 卜’弟一電連接結構342亦可如第5Β圖所示係一金屬 第分別與相鄰之料體疊層撕形成電性接觸 之發光構示意圖’前述之發光元件300 相二與+V體璺層340除了可以以上述有機金屬化學氣 -分別於發光疊層32、半導體叠層34=:’二黏= 201103121 將發光疊層32與半導體疊層340固定於基板3〇之第一主要表面 302與第二主要表面3〇4上，藉由上述黏結層44固定 與半導體f層34G之技術，提高產品之良率並且降低生產成i ; 其中，黏著層44之材質包含金屬材質或有機黏著材質。 第7圖為本發明另一實施例結構示意圖，如第6圖所示，發光 兀件300更可以包含位於基板3〇第二主要表面304之被動元件40 與整流元件34電性連接，例如被動元件4〇包含一電阻一電感、 或一電容串聯至整流元件34 H容與整流元件34並聯以^供 發光元件300電性上的保護或調整發光元件3〇〇之電性特性，& ，元件40例如^薄難阻、薄職容或_電紐祕與發光元 =300整合成單一晶粒(singleehip);上述之薄膜電阻之材質包含 氮化鈕(TaN)、矽鉻合金(siCr)或鎳鉻合金(NiCr)等材料。 一第8圖為本發明另一實施例結構示意圖，如第8圖所示，發光 70件300更包含一波長轉換結構42位於發光疊層32上，用以吸 光疊層32所發出之錄：其中波長轉換結構42之材 含—種或-種以上之螢純質或磷光物質，且此波長轉 換、、，。構42可為一層狀結構均勻塗佈於發光疊層％之上或為一内
^波長轉換材質之職紐光疊層32封於其内，藉 學性質之產品。 /生土个丨J7U 第9圖為本發明又一實施例之結構示意圖，如第8圖所示，潑 ^件300更包含一導熱層46，其中導熱層*可以與基板3〇之 一主要表面304接觸或與被動元件34接觸，用以將發光元件3〇( =各部？所產生之熱能導出。此外，上述導熱層46之材質可以選 具有尚熱傳導係數（thermal conductivity)之材料，1埶僂藤禆 基板3〇之熱傳導係數或大於5〇W/mK，導熱層46之材質 =銅、，金、鍊、鑽石、類鑽石結構（DLC)、氮化紹（ain)、
^接奈米碳管(CNT)或其組合；導熱層46之厚度例如大於 其面積例如佔基板30面積不小於50%。 P 再者’上述第3A圖至第9圖所狀發光元件3〇〇可以應用在 《光裝置上’此發光裝置更可進_步地應用於卿設備液晶 201103121 顯示器背光模組或車龍㈣，而且發光元件可 10==、fT24GV、12V、24V 或48ν 等供應電源。、 執ί上,明揭不之發光元件300係將整流元件34、接觸 板3g之第：主要表面⑽，並且發 紐^—主録面观，藉此可將發光元件 l良i^32所在的整個表面做為出光面，以減少發光面積 的上目^之實施例鶴為制本發明讀術思想及特點，並目 Φ 岐本發明之專利範圍，即大凡依本發日^ 圍内一作之均等變化或修飾，仍應涵蓋在本發明之專利範 【圖式簡單說明】 第1圖為習知之發光元件結構示意圖。 第2圖為習知之光電裝置結構示意圖。 =3A圖為本發明實施例之側視結構示意圖。 ，3B圖為本發明電路結構示意圖。 J二至4B圖為本發明實施例中第一電性連接結構之結構示
It至5B圖為本發明實施例中第二電性連接結構之結構示 =圖為本發明實施例之上視結構示意圖與下視結 第8 =本發明實施例中第四電性連接結構之結^示ϊΐ ό。 圖為本發明另一實施例之結構示意圖。 〜- 9圖為本發明又一實施例之結構示意圖。 201103121
【主要元件符號說明】 100 發光元件 10 基板 12 發光二極體單元 14 電極 16 電極 200 光電裝置 202 電路 20 次載體 22 焊料 24 電性連接結構 300 發光元件 30 基板 302 第一主要表面 304 第二主要表面 32 發光疊層 320 第一電性連接結構 34 整流元件 340 半導體疊層 342 第二電性連接結構 36 第三電性連接結構 38 接觸墊 40 被動元件 322 第一導電型半導體層 324 發光層 326 第二導電型半導體層 3202 絕緣層 3204金屬層 3422絕緣層 3424金屬層 44 波長轉換層 46 導熱層

Claims (1)

  1. 201103121 七、申請專利範圍·· 1. 一種發光元件，包含·· 板’具有-第—主要表面與__第二主要表面； ΐΐί發光疊層，分佈於該基板之第—主要表面，1中該發 係:一第一電性連接結構形成電性連接:以及 至^電子轉，位於該基板之第二主要表面； 電i生ίί結構延伸自該基板之第一主要表面至該基
    =專=項所述之發光元件，其中該電丄 圍第1項所述之發光元件’其中該電子元件包 4.丨酬狀發光耕，其中雜流元件包 第1項所述之發光元件，該第-電性連接結 6· ^申請專利範圍第丨項所述之發光元件，其中該第二電性連 接結構包含穿透該基板之金屬柱。 .^°申π專利範圍第4項所述之發光元件，其中該半導體疊層 係發光二極體、基納二極體、或蕭特基二極體。 且θ 8.如申=專利範圍第1項所述之發光元件，更包含一波長轉換 層覆蓋於該發光璺層上’其中該波長轉換物質之材質包含 光物質或磷光物質。 、 如申吻專利範圍第2項所述之發光元件，其中該電阻之材質 包含氮化组(TaN)、石夕鉻合金(SiCr)或鎳鉻合金(NiCr)等材質。 10. 如申請專利範圍第1項所述之發光元件，更包含一導熱層位 於該基板之第二主要表面，其巾該導熱層具有-熱傳導係數 大於 50W/mIC。 11. 如申請專利範圍第10項所述之導熱層之厚度大於3um。 12. 如申請專利範圍第1〇項所述之導熱層之面積佔基板面積不 201103121 小於50%。 13· ^申，專利範圍第1〇項所述之導熱層之材質包含銅、銀、 火鑽石、類鑽石結構（DLC)、氮化鋁（A1N)、石墨、 奈米奴管（CNT)或其組合。 圍第1項所述之發光元件，更包含-黏結層位 ®層與該基板之間及/或位於該電子元件與該基板 之間。 15·=3ϋ範圍第14項所述之發光元件，其中該黏著層之 材貝包含金屬材質或有機黏著材質。 16. 專利範圍第1項所述之發光元件，其中該基板為一單 盾、，、吉構。 17. —種發光元件，包含： 一基板，具有一第一主要表面與一第二主要表面； 複數個發光疊層，位於該基板之第一主要表面；以及 至少-橋式整流元相及至少—被動元件，位於該基板之第 ^主要表面’其巾該發光疊層、該橋式整流元件、以及該被 動元件間形成電性連接。 專利棚第17項所述之發光元件，其中該被動元件 13溥膜電阻、薄膜電容、或薄膜電感等元件。 19. 如申請專利範圍第17顿述之發光元件，t包含一黏⑽ 位於該發光疊層與該基板之間及/或位於該橋式整流元件二 該被動元件與該基板之間。 20. 如申請專利範圍第19項所述之發光元件，其中該黏著 材質包含金屬材質或有機黏著材質。 曰 21，1ΐί利範圍第17項所述之發光元件，其中該基板為- 單僧、、Ό構。 22.如申請專利範圍第1項或第17項所述之發光元件，適 100V、110V、220V、240V、12V、24V、或 48V 供應電源/
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI570904B (zh) * 2012-02-17 2017-02-11 晶元光電股份有限公司 發光二極體元件

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7985970B2 (en) 2009-04-06 2011-07-26 Cree, Inc. High voltage low current surface-emitting LED
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US8476668B2 (en) * 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
CN102693970B (zh) * 2011-03-22 2017-04-12 晶元光电股份有限公司 发光二极管装置
US20130001596A1 (en) * 2011-06-28 2013-01-03 Osram Sylvania Inc. Deposition of esd protection on printed circuit boards
WO2013016346A1 (en) * 2011-07-25 2013-01-31 Cree, Inc. High voltage low current surface emitting light emitting diode
CN203277498U (zh) 2012-05-29 2013-11-06 璨圆光电股份有限公司 发光组件及其发光装置的装置基座
US9166116B2 (en) 2012-05-29 2015-10-20 Formosa Epitaxy Incorporation Light emitting device
US9677907B2 (en) * 2013-03-14 2017-06-13 Itron Inc Intelligent receptacle
DE102013113682A1 (de) * 2013-12-09 2015-06-25 Otto-Von-Guericke-Universität Magdeburg Verbindungshalbleiterbauelement
US10043850B2 (en) * 2015-03-20 2018-08-07 Xiamen Changelight Co., Ltd. HV-LED module having 3D light-emitting structure and manufacturing method thereof
CN104900713B (zh) * 2015-06-15 2017-12-08 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示基板、显示装置
US20170095582A1 (en) * 2015-10-01 2017-04-06 Sensor Electronic Technology, Inc. Integrated Flip Chip Device Array
USD834740S1 (en) 2017-09-29 2018-11-27 Pt. Ho Wah Genting Worklight
CN107768235B (zh) * 2017-10-25 2019-11-22 中国工程物理研究院电子工程研究所 一种基于二硫化钼-石墨烯复合缓冲层的氮化镓外延结构的制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW495854B (en) * 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP3659407B2 (ja) * 2001-08-03 2005-06-15 ソニー株式会社 発光装置
US7579629B2 (en) * 2003-04-01 2009-08-25 Sharp Kabushiki Kaisha Light-emitting apparatus package, light-emitting apparatus, backlight apparatus, and display apparatus
CN100364120C (zh) 2004-07-29 2008-01-23 晶元光电股份有限公司 具有黏结层的发光元件阵列
WO2006095949A1 (en) * 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Led package having an array of light emitting cells coupled in series
KR100634307B1 (ko) * 2005-08-10 2006-10-16 서울옵토디바이스주식회사 발광 소자 및 이의 제조 방법
KR100968843B1 (ko) * 2005-12-16 2010-07-09 서울옵토디바이스주식회사 다수의 발광셀이 어레이된 발광소자
TWI298553B (en) * 2006-05-03 2008-07-01 Feng Guang Technology Corp Light module
CN101071812A (zh) 2006-05-12 2007-11-14 启萌科技有限公司 发光二极管封装模组
WO2008075797A1 (en) * 2006-12-18 2008-06-26 Seoul Opto Device Co., Ltd. Light emitting device having isolating insulative layer for isolating light emitting cells from each other and method of fabricating the same
WO2008105245A1 (ja) * 2007-02-28 2008-09-04 Koa Corporation 発光部品およびその製造法
TWM328691U (en) 2007-07-13 2008-03-11 Ks Terminals Inc Battery terminal connector and portable digital devices with the connector
TWM328671U (en) * 2007-09-19 2008-03-11 Flexium Interconnect Inc Heat-dissipation flexible circuit board for backlight module
CN101465328A (zh) * 2007-12-21 2009-06-24 深圳富泰宏精密工业有限公司 发光二极管封装及其制造方法
US7732829B2 (en) * 2008-02-05 2010-06-08 Hymite A/S Optoelectronic device submount
US20100001305A1 (en) * 2008-07-07 2010-01-07 Visera Technologies Company Limited Semiconductor devices and fabrication methods thereof
US8058669B2 (en) * 2008-08-28 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode integration scheme
US8193546B2 (en) * 2010-06-04 2012-06-05 Pinecone Energies, Inc. Light-emitting-diode array with polymer between light emitting devices
US8552458B2 (en) * 2010-06-26 2013-10-08 SemiLEDs Optoelectronics Co., Ltd. Side by side light emitting diode (LED) having separate electrical and heat transfer paths
US8193015B2 (en) * 2010-11-17 2012-06-05 Pinecone Energies, Inc. Method of forming a light-emitting-diode array with polymer between light emitting devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI570904B (zh) * 2012-02-17 2017-02-11 晶元光電股份有限公司 發光二極體元件

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