TW201044106A - Method for fabricating polysilicon hard mask using metal catalyst and semiconductor device using the same - Google Patents
Method for fabricating polysilicon hard mask using metal catalyst and semiconductor device using the same Download PDFInfo
- Publication number
- TW201044106A TW201044106A TW099109582A TW99109582A TW201044106A TW 201044106 A TW201044106 A TW 201044106A TW 099109582 A TW099109582 A TW 099109582A TW 99109582 A TW99109582 A TW 99109582A TW 201044106 A TW201044106 A TW 201044106A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- metal catalyst
- polycrystalline
- mask
- forming
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 76
- 239000002184 metal Substances 0.000 title claims abstract description 76
- 239000003054 catalyst Substances 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 38
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 claims abstract description 64
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 229910052732 germanium Inorganic materials 0.000 claims description 50
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 15
- 229910052707 ruthenium Inorganic materials 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 239000004575 stone Substances 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 121
- 238000002425 crystallisation Methods 0.000 description 13
- 230000008025 crystallization Effects 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- -1 bismuth nitride Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/485—Bit line contacts
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090029866A KR101088457B1 (ko) | 2009-04-07 | 2009-04-07 | 금속 촉매를 이용한 폴리 실리콘 마스크의 제조방법 및 이를 이용한 반도체 소자의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201044106A true TW201044106A (en) | 2010-12-16 |
Family
ID=42936714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099109582A TW201044106A (en) | 2009-04-07 | 2010-03-30 | Method for fabricating polysilicon hard mask using metal catalyst and semiconductor device using the same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2012523129A (ko) |
| KR (1) | KR101088457B1 (ko) |
| CN (1) | CN102365710A (ko) |
| TW (1) | TW201044106A (ko) |
| WO (1) | WO2010117201A2 (ko) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101967753B1 (ko) | 2012-07-30 | 2019-04-10 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| KR101972159B1 (ko) | 2012-08-24 | 2019-08-16 | 에스케이하이닉스 주식회사 | 실리콘함유하드마스크를 구비한 반도체장치 및 그 제조 방법 |
| KR102085526B1 (ko) * | 2013-10-01 | 2020-03-06 | 삼성전자 주식회사 | 반도체 소자 및 그 제조 방법 |
| KR102330943B1 (ko) * | 2017-03-10 | 2021-11-25 | 삼성전자주식회사 | 포토마스크용 펠리클과 이를 포함하는 레티클 및 리소그래피용 노광 장치 |
| KR102542624B1 (ko) | 2018-07-17 | 2023-06-15 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
| CN109712933A (zh) * | 2019-02-19 | 2019-05-03 | 合肥鑫晟光电科技有限公司 | 显示基板的制作方法、显示基板及显示面板 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH053191A (ja) * | 1991-06-24 | 1993-01-08 | Sharp Corp | 微細パターンの形成方法 |
| EP0612102B1 (en) * | 1993-02-15 | 2001-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Process for the fabrication of a crystallised semiconductor layer |
| JPH10313104A (ja) * | 1997-05-13 | 1998-11-24 | Sony Corp | 半導体装置の製造方法 |
| JP2005285929A (ja) * | 2004-03-29 | 2005-10-13 | Rohm Co Ltd | 半導体装置の製造方法 |
| KR101232170B1 (ko) * | 2006-06-30 | 2013-02-12 | 엘지디스플레이 주식회사 | 폴리실리콘 박막트랜지스터의 제조방법 및 이를 이용한액정표시소자의 제조방법 |
| KR100883350B1 (ko) * | 2006-12-04 | 2009-02-11 | 한국전자통신연구원 | 쇼트키 장벽 박막 트랜지스터 제조방법 |
| KR100864883B1 (ko) * | 2006-12-28 | 2008-10-22 | 삼성에스디아이 주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치. |
| KR20080111693A (ko) * | 2007-06-19 | 2008-12-24 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
-
2009
- 2009-04-07 KR KR1020090029866A patent/KR101088457B1/ko active IP Right Grant
-
2010
- 2010-03-30 TW TW099109582A patent/TW201044106A/zh unknown
- 2010-04-07 JP JP2012504609A patent/JP2012523129A/ja active Pending
- 2010-04-07 CN CN201080015376XA patent/CN102365710A/zh active Pending
- 2010-04-07 WO PCT/KR2010/002116 patent/WO2010117201A2/ko active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010117201A3 (ko) | 2010-12-23 |
| CN102365710A (zh) | 2012-02-29 |
| WO2010117201A2 (ko) | 2010-10-14 |
| JP2012523129A (ja) | 2012-09-27 |
| KR101088457B1 (ko) | 2011-12-01 |
| KR20100111433A (ko) | 2010-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI329351B (en) | Silicided recessed silicon | |
| KR100945785B1 (ko) | 완전 실리사이드화 금속 게이트의 형성 방법 | |
| US8754530B2 (en) | Self-aligned borderless contacts for high density electronic and memory device integration | |
| TW201110324A (en) | Semiconductor device and CMOS device and integrated circuit | |
| TW200425411A (en) | Integrating n-type and p-type metal gate transistors | |
| JP2004119958A (ja) | １ｔ１ｒ型抵抗メモリアレイを製造する方法 | |
| TW200905751A (en) | Method of fabricating polycrystalline silicon layer, TFT fabricated using the same, method of fabricating TFT, and organic light emitting diode display device having the same | |
| TW200905885A (en) | Semiconductor device and manufacturing method thereof | |
| TW201044106A (en) | Method for fabricating polysilicon hard mask using metal catalyst and semiconductor device using the same | |
| TW201238038A (en) | Semiconductor memory device | |
| TW201135830A (en) | Methods of manufacturing semiconductor devices | |
| TW201123356A (en) | Wiring structures and methods of forming wiring structures | |
| JPH1174219A (ja) | 半導体装置の製造方法および半導体装置 | |
| JP5194797B2 (ja) | 半導体装置およびその製造方法 | |
| TW200832528A (en) | Transistor gates including cobalt silicide, semiconductor device structures including the transistor gates, precursor structures, and methods of fabrication | |
| TWI306670B (en) | Memory device | |
| TW201005943A (en) | Transistor with contact over gate active area | |
| KR100569587B1 (ko) | 고유전체 캐패시터의 제조 방법 | |
| TW559982B (en) | Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions | |
| US9257553B2 (en) | Vertical transistor and method to form vertical transistor contact node | |
| TWI258205B (en) | Damascene process and method for fabricating bit line for memory | |
| TW201023343A (en) | Semiconductor device and manufacturing method of the same | |
| US20120292674A1 (en) | Semiconductor device and manufacturing method thereof | |
| CN209401624U (zh) | 半导体栅极结构 | |
| US20060286756A1 (en) | Semiconductor process and method for reducing parasitic capacitance |