201038400 六、發明說明： 【發明所屬之技術領域】 ，本么㈣關於-種包含複合材料之電路板結構與形成複合材料 電路板!口構的方法。特定言之，本發明侧於一種包含觸媒顆粒之 .複口材料以及使用包含觸媒顆粒之複合材料以協助形成一電路板 結構。 ri 【先前技術】 電路板疋電子裝置中的一種重要的元件。為了追求更薄的成品 厚度、因應細線路的需求、突破姓刻與信賴性的缺點，敌入式線路 結構已逐漸興起。由於般入式線路結構係將線路圖案埋入基材中， 因此有助於減少封裝成品的厚度。 就目前的技術*言’已知魏種方法以職此等電路板。其中 G -種方法是使用雷職⑽基材圖案化，來定義—職形式的結 構’再使用-導電材料來填滿形成在基材上的凹穴，以完成一礙入 式線路結構。 一般說來，基材的表面要先經過活化，才能使得導電材料成功 地填滿在基材上的凹穴，通f是烟無電賴的技術。財前的技 術方案而言，其製作方式是直接線路設計。例如前述使用雷射將基 •材圖案化，來定義-鑲嵌形式的結構，再使用一導電材料來填滿形 4 201038400 成在基材上的凹穴，以完成一嵌入式線路結構。 Ο Ο 請參考第1圖’例示現有無電電鑛技術造成電鑛滿溢 (—g)的現象。若是使用無電電鍍的技術將導電材料⑽， 例如銅，填入基材101中預先形成凹幻22的過程中，很容易造成 電鍍滿溢（〇ver-piating)的現象。電鍍滿溢一旦發生時，一方面， 導電材料130會沿著凹穴開口的轉角處向四面八方延伸。由於告前 技術都著重於細線路的開發，故同一線路層中的線 二 :窄。沿著凹穴㈣口向四面八方延伸的導一 ^ =’結料赵了恥砰絲面l3i。射 本領域之技蓺人士所Η α 裡、、、〇禾郡疋 u士所不樂見的。因此，以上之缺點實在有待克服。 【發明内容】 料電==:;=材料之電路板結構與形成複合材 材料會抑制電鍍滿溢的料^複合材料之電路板結構中之複合 2四面人方延伸的問題。既然麵滿 2 材中凹穴的導電材料就幾芍又填入基 平坦度亦獲得改盖。進订共形沉積，從而導電材料表面 本發明之複合材料結構包 本發明首先提出-種複合材料結構 201038400 含一觸媒介電層以及一保護介電層。觸婵介 承，丨冤層包含一介電材料盘 -觸媒顆粒。保護介電層包含此介電材㈣接觸觸媒介電層。觸媒 顆粒的材質包括金屬的配位化合物，例如金屬氧化物 金屬錯合物及/或金屬螯合物。金屬的種類可以為鋅3 鎳、鈀、鉑、鈷、铑、銥、銦、鐵、缝 5 、艮金、 μ 鋁、鉻、鎢、釩、鉅、及/ 或鈦。 Ο 〇 本發明其:欠提出-種複合材料觀板結構，包含—一… 合材料介電層以及-圖#化導線層。複合材料介糾赌基材上複 並包含-觸媒介制及-賴介電層。觸媒介電層包含— 與-觸媒雕，並鋪録。_齡絲晚含介電材料並接觸 觸媒介電層。圖案化導線層係位於觸媒介電層上。 本發明複合材料電路板結構中之介電材料如為環氧樹脂、改 質之壞補脂、聚脂、丙烯_旨、_聚合物、聚絲基氧化物、 «亞胺、_樹脂、聚石風、料聚合物、Βτ樹脂、紐聚醋、聚 乙烯、聚碳酸賴脂、丙稀腈-丁二秦苯乙稀共聚物、聚對苯二甲 酸乙二醋㈣了）、聚對苯二mT;(pBT)、液晶高分子叫⑽ crystal P〇lyestei·’ LCP )’_( PA )、尼龍 6、共聚聚情⑻⑷、 聚笨硫醚（PPS)或環狀烯烴共聚物（c〇c)。 本發明又提出-種形成複合材料電路板結構的方法。首先，提 供一複合材料結構。此等複合材料結構包含—基材以及—複合材料 201038400 介電層。複合材料介電層位於基 護介電層。觸媒介電層包含—介電材料^3;觸媒介電層及一保 而保護介絲顺含介電㈣咖粒，並接觸基材。 合材料介電層並同時活化觸媒顆粒。繼續_導:圖= 大於3仰或疋，導線層由單一銅層所組成。 Ο Ο 【實施方式】 料一種複合材料結構、包含複合材料之電路板結構愈 ===的方法。本發明之複合材料，可以抑制複 口材科電路板結構在無電魏時健滿溢 沿著凹穴的開口向四面八方延伸的問題。另外，填入== 導電材枓亦不會進行共形沉積，㈣改善導電材料表面平坦度。 本發明首先提供-贿合材·構。第2 _林發明複 髓構之4圖。如第2 _示，本發明之複合材料結構包含 -觸媒介電層210以及—保護介電層22G。觸媒介電層加包含一 介電材料211與至少一觸媒顆粒212。觸媒顆粒212會分散於介電 材料211中。一但使用例如雷射活化以後，觸媒介電層2H)在此觸 媒顆粒212的幫助下，可以辅助一導電層的成形。另外，保護介電 層220則包含介電材料211並接觸觸媒介電層21〇。視不同之線寬 尺寸而^ ’保護介電層22〇的厚度最多可達15_。 7 201038400 如苐2圖所不，視情況需要’本發明之複合材料結構還可 以進一步包含-圖案化導線層23〇。圖案化導線層23〇會被入複合 材料結構200中’使得圖案化導線層23〇位於觸媒介電層21〇上並 直接接觸觸媒介電層21〇。較佳者，圖案化導線層23〇表面最高點 與最低點之差财大於3/xm。另外，由於化轉韻得的銅與電鑛 ‘製程所得的銅在質地上並不完全相同，圖案化導線層23〇在結構上 .較佳僅包含單-銅層，例如由化學製程所得，而不是由多種物理性 〇質相異之銅所組成’例如混合由化學製程與賴製程所得的銅。 一-方面’本發明複合材料結構·中之介電材料叫可以包含 :高分子材料，例如環氧樹脂、改f之環氧樹脂、聚脂、丙稀酸醋、 氣素聚合物、聚亞苯基氧化物、聚酸亞胺、_樹脂、聚礙、石夕素 聚合物、BT 樹脂（bismaleitnide triazine m〇dified ep〇xy resin)、氮酸 聚酷、聚乙烯、聚碳酸醋樹脂、丙烯腈丁二烯_苯乙稀共聚物、聚 〇對苯二甲酸乙二|旨、聚對苯二甲酸了二§旨、液晶高分子、聚酿胺、 ‘尼龍6、共聚聚甲盤、聚苯硫喊或是環狀稀煙共聚物。 另-方面，本發明複合材料結構2〇〇中之觸媒顆粒212可以包 括金屬的配位化合物所形成之多個奈米顆粒。適當之金屬的配位化 合物可以是金屬氧化物、金屬氮化物、金屬錯合物、及/或金屬整合 物。金屬的配位化合物中之金屬可以為鋅、銅、銀、金、錄、纪、 m銀、姻、鐵、猛、銘、絡、嫣、釩、知、及/或鈦。 8 2〇l〇3840〇 ^發明繼續提供-種複合材料電路板結構，較佳者，包含前述 材料結構。第3圖例示本發明複合材料電路板結構之示意 。如第3圖所示，本發明之複合材料電路板結構包含一基材 則、一複合材料介電層3〇2以及一圖案化導線層33〇。 複合材料介電層302包含一觸媒介電層31〇以及一保護介電声 Ο 32〇。觸媒介電層310包含一介電材料311與至少一觸媒顆粒犯曰。 觸媒顆粒312會分散於介電材料311中。另外，保護介電層32〇包 含介電材料321並接觸觸媒介電層31〇。視不同之線寬尺寸而定， 保護介電層320的厚度最多可達加。圖案化導線層33〇會後入 複合材料介電層搬中，使得圖案化導線層33〇位於觸媒介電層310 上亚直接接觸觸媒介電層31G。—但使_如雷射活化以後，觸媒 介電層31〇在此觸媒顆粒312的幫助下，可以輔助圖案化導線層33〇 的成形。 本發明複合材料電路板結構300中之基材3〇1可以為一多層電 路板’導電祕層可以例如是埋人式線路結構及/或非埋人式線路結 構。另外，介電材料311可以包含一高分子材料。而觸媒顆粒312 可以包括金屬的配位化合物所形成之多個奈米顆粒。介電材料3ΐι 與觸媒顆粒犯之較佳實施方式可以如前所述之介電材料叫與觸 媒顆粒212，在此不多加贅述。 在本發明一較佳實施態樣中，圖案化導線層33〇表面最高點與 9 201038400 最低點之差距不大於3_。另外，由於 佳僅包含早-銅層，例如由化學製程所得， =構上較 相異之銅所組成，例如混合由 4續物理性質 鲖。 I、電電鑛製程與-般電鍍製程所得的 Ο 本發明再提供一御成複合材料電路板結構的方法。第4 7固 例不形成本㈣形成複合材料電路板結構方法之示意圖。如第 所不’本發_成複合材料電路板結構的方法，錢_ ^ ^r4。複合材料結構姻包含一基材仙以及一複合材= 本發明複合材料結構404中之基材可以為一多層電路板， 導電線路層可關如是埋人式線職構及/或非埋人式^結構。複 合材料介電層402可以包含-觸媒介電層以及—保護介電層 420。觸媒介電層41G可以包含-介電材料411與至少—觸媒顆曰粒 412。觸媒雕412會分散於介電材料411巾。一但使用例如雷射活 化以後，觸媒介電層410在此觸媒顆粒412的幫助下，可以輔助一 導電層的成形。另外’保護介電層42〇可以包含介電材料411並接 觸觸媒介電層410。視不同之線寬尺寸而^，保護介電層42〇的厚 度最多可達15μηι。 然後，如第5圖所示，圖案化複合材料介電層4〇2以形成溝槽 201038400 同％活化觸媒顆粒 422 叹口何料介電層4〇2的 ^用物理方法。例如’可以使时射燒鱗裎或賴綱^可 其中，可以使用紅外線雷射、紫外線雷射、 L, ^ 千刀千(Excimer)蛩急+ 或运紅外線雷射等雷射光源來進行雷射燒餘製程。 ‘ 接著’如第6圖所示，形成一導線層伽。導線層會喪入 圖案化複合材料介電層4_冓槽422中，故位於觸媒介電 ❹上並直接細觸媒介電層彻。可以使用例如無電電鍛方法，將導 電材料’例如化銅，填入圖案化複合材料介電層4〇2之溝槽似中， 形成導線層。本發明之複合材料可以降低複合材料電路板結構 在電鑛時電鑛滿溢的發生，與避免導電材料從溝槽a2的開口向四 面八方延伸的問題。 例如’保護介電層420中之介電材料421會使得化銅不容易成 ❹長。因此，只有在活化過觸媒顆粒412的幫助下，導線層43〇才容 易成形。在此導引下’電鑛滿溢的問題便不容易發生，於是避免導 電材料從溝槽422的開口向四面八方延伸的問題。另外，在此導引 下，填入基材中溝槽422的電鍍材料亦不容易進行共形沉積，而是 盡量均勻地填入圖案化複合材料介電層4〇2之溝槽422中。如此一 來，就可以改善導線層430表面平坦度，例如，導線層43〇表面最 高點與最低點之差距會不大於3/lm。 由於化學製程所得的銅與電鍍製程所得的銅在質地上並不完全 11 201038400 相同，導線層430在結構上較佳僅包含單一銅層，例如由化學製程 所得，而不是由多種物理性質相異之銅所組成，例如混合由化學製 程與電鍍製程所得的銅。本發明複合材料結構賴中介電材料川 與觸媒顆粒412之較佳實施方式可以如前所述之介電材料叫與觸 媒顆粒212，在此不多加贅述。 在本發明一實施態樣中，如第7圖所示，視情況需要，複合材 〇料介電層402射以包含—水溶性薄膜44()。水溶性薄膜_位於 保護介電層420之外表面上。可以在圖案化複合材料介電層搬之 後形成導線層430之前，移除水雜，避免圖案化複合材 料介電層4〇2之後產生的任何雜質影響導線層43〇的形成。 水岭性薄膜440會保護保護介電層42〇。水溶性薄膜44〇可以 包^親水性同分子’使得在必要時可以用水洗去。例如，此等親水 I1生冋刀子之特性g能基可以包含經基(_〇H)、酸絲⑽而2)、福 酸基⑽H)、__C〇〇H)其中之一的官能基團，或者前述各官能 基團的任意組合。 、所述僅為本發明之較佳實施例’凡依本發明申請專利範圍 所做之均等f化與修飾’皆簡本發明之涵蓋範圍。 【圖式簡單說明】 第1圖例不現有無電電鍍技術造成電鑛滿溢的現象。 12 201038400 第2圖例示本發明複合材料結構之示意圖。 第3圖例示本發明複合材料電路板結構之 墙 小忍圓 法之示意圖。 弟4-7圖例示形成本發明複合材料電路板、妹構方 【主要元件符號說明】 101基材 122凹穴201038400 VI. Description of the invention: [Technical field to which the invention pertains], (4) A method for forming a circuit board structure comprising a composite material and forming a composite circuit board! In particular, the present invention is directed to a composite material comprising catalyst particles and a composite material comprising catalyst particles to assist in forming a circuit board structure. Ri [Prior Art] An important component in circuit boards and electronic devices. In order to pursue thinner finished product thickness, in response to the demand for fine lines, and to break through the shortcomings of surname and reliability, the enemy-type circuit structure has gradually emerged. Since the immersive line structure embeds the line pattern in the substrate, it helps to reduce the thickness of the packaged product. As far as the current technology is concerned, it is known that the Wei method is used for such boards. The G-method is to use the Lei (10) substrate patterning to define the structure of the job-re-use-conducting material to fill the recesses formed on the substrate to complete the barrier structure. In general, the surface of the substrate is first activated to allow the conductive material to successfully fill the recesses on the substrate. For pre-financial technology, it is produced in a direct line design. For example, the foregoing uses a laser to pattern the substrate to define a structure in a damascene form, and then uses a conductive material to fill the recesses on the substrate to complete an embedded wiring structure. Ο Ο Refer to Figure 1 for an illustration of the phenomenon of electric mine overflow (-g) caused by existing electroless ore technology. If a conductive material (10), such as copper, is used in the process of preliminarily forming the concave phantom 22 in the substrate 101 by electroless plating, it is easy to cause 电镀ver-piating. Once the plating overflow occurs, on the one hand, the conductive material 130 will extend in all directions along the corners of the cavity opening. Since the pre-flight technology focuses on the development of fine lines, the line 2 in the same circuit layer is narrow. Along the mouth of the pocket (four), the guide is extended in all directions. ^ =' The material is smeared with a shame silk surface l3i. Those who are skilled in the field are not satisfied with the Η, 、, 〇he 疋 疋 。. Therefore, the above shortcomings need to be overcome. SUMMARY OF THE INVENTION Material==:== The circuit board structure of the material and the formation of the composite material can inhibit the composite in the circuit board structure of the plating material and the composite material. Since the conductive material covering the recess in the material is filled with a few turns and the base flatness is also changed. Progressive Conformal Deposition to Conductive Material Surfaces Composite Structure Packages of the Invention The present invention first proposes a composite material structure 201038400 comprising a one-touch dielectric layer and a protective dielectric layer. In the touch, the enamel layer contains a dielectric material disk - catalyst particles. The protective dielectric layer comprises the dielectric (4) contact dielectric layer. The material of the catalyst particles includes a coordination compound of a metal such as a metal oxide metal complex and/or a metal chelate. The type of metal may be zinc 3 nickel, palladium, platinum, cobalt, rhodium, ruthenium, indium, iron, slit 5, ruthenium, μ, aluminum, chromium, tungsten, vanadium, giant, and/or titanium. 〇 〇 The invention has the following advantages: a composite material viewing panel structure comprising a dielectric layer and a patterned conductive layer. The composite material is embossed on the substrate and comprises a dielectric substrate and a dielectric layer. The contact dielectric layer contains - and - the catalyst is carved and paved. _ Age silk contains dielectric material and contacts the dielectric layer. The patterned wire layer is on the contact dielectric layer. The dielectric material in the composite circuit board structure of the present invention is epoxy resin, modified bad fat, polyester, propylene, _polymer, polysilyl oxide, «imine, _resin, poly Stone wind, polymer, Βτ resin, neopoly vinegar, polyethylene, poly lysine, acrylonitrile-butyl dimethyl styrene copolymer, polyethylene terephthalate (IV), polyparaphenylene Two mT; (pBT), liquid crystal polymer called (10) crystal P〇lyestei·' LCP ) '_( PA ), nylon 6, copolymerization (8) (4), polystyrene sulfide (PPS) or cyclic olefin copolymer (c〇 c). The invention further proposes a method of forming a composite circuit board structure. First, a composite structure is provided. These composite structures comprise a substrate and a composite 201038400 dielectric layer. The composite dielectric layer is on the protective dielectric layer. The contact dielectric layer comprises a dielectric material ^3; a dielectric layer and a protective dielectric filament containing dielectric (iv) coffee grains and contacting the substrate. The dielectric layer is combined and simultaneously activates the catalyst particles. Continue _Guide: Figure = greater than 3 elevation or 疋, the wire layer consists of a single copper layer. Ο Ο [Embodiment] A method of composite structure, circuit board structure containing composite material ===. The composite material of the present invention can suppress the problem that the circuit board structure of the composite material material extends in all directions along the opening of the pocket in the absence of electricity. In addition, filling == conductive material 枓 will not be conformal deposition, (4) improving the surface flatness of the conductive material. The invention first provides a bribe material. The 2nd _ Lin invention complex 4 of the structure of the marrow. As shown in Fig. 2, the composite structure of the present invention comprises a contact dielectric layer 210 and a protective dielectric layer 22G. The dielectric layer further comprises a dielectric material 211 and at least one catalyst particle 212. The catalyst particles 212 are dispersed in the dielectric material 211. Once activated by, for example, laser activation, the dielectric layer 2H), with the aid of the catalyst particles 212, assists in the formation of a conductive layer. In addition, the protective dielectric layer 220 includes a dielectric material 211 and contacts the dielectric layer 21A. Depending on the line width, the thickness of the protective dielectric layer 22 can be up to 15 mm. 7 201038400 As shown in Fig. 2, as needed, the composite structure of the present invention may further comprise a patterned wire layer 23A. The patterned wire layer 23 is incorporated into the composite structure 200 such that the patterned wire layer 23 is positioned over the contact dielectric layer 21 and directly contacts the dielectric layer 21A. Preferably, the difference between the highest point and the lowest point of the patterned conductor layer 23 is greater than 3/xm. In addition, since the copper obtained by the conversion of the copper and the electric ore process is not exactly the same in texture, the patterned wire layer 23 is structurally. Preferably, only the single-copper layer is included, for example, obtained by a chemical process. Rather than consisting of a variety of physical enamel-like copper's, for example, mixing copper obtained from chemical processes and Lai's process. The first aspect of the composite material structure of the present invention may include: a polymer material, such as an epoxy resin, an epoxy resin, a polyester, an acrylic acid, a gas polymer, a poly Phenyl oxide, polyimide, _resin, polyglycol, lithene polymer, BT resin (bismaleitnide triazine m〇dified ep〇xy resin), uric acid polycondensate, polyethylene, polycarbonate resin, propylene Nitrile Butadiene-Benzene Ethylene Copolymer, Poly(ethylene terephthalate), Polyethylene Terephthalate, Liquid Crystal Polymer, Polyamide, 'Nylon 6, Copolymer Polypropylene, Poly Phenyl sulfide or a ring-shaped smoke copolymer. In another aspect, the catalyst particles 212 in the composite structure of the present invention may comprise a plurality of nanoparticles formed by a coordination compound of a metal. The coordination compound of a suitable metal can be a metal oxide, a metal nitride, a metal complex, and/or a metal integrator. The metal in the coordination compound of the metal may be zinc, copper, silver, gold, ruthenium, m, silver, samarium, iron, sulphur, sulphur, samarium, vanadium, stellite, and/or titanium. 8 2〇l〇3840〇 ^The invention continues to provide a composite circuit board structure, preferably comprising the aforementioned material structure. Fig. 3 is a view showing the structure of the composite circuit board of the present invention. As shown in Fig. 3, the composite circuit board structure of the present invention comprises a substrate, a composite dielectric layer 3〇2, and a patterned wiring layer 33〇. The composite dielectric layer 302 includes a contact dielectric layer 31A and a protective dielectric acoustic layer 32A. The contact dielectric layer 310 includes a dielectric material 311 and at least one catalyst particle. The catalyst particles 312 are dispersed in the dielectric material 311. In addition, the protective dielectric layer 32 includes a dielectric material 321 and contacts the dielectric layer 31A. Depending on the line width dimension, the thickness of the protective dielectric layer 320 can be up to plus. The patterned conductive layer 33 is then implanted into the composite dielectric layer such that the patterned conductive layer 33 is located on the contact dielectric layer 310 and is in direct contact with the contact dielectric layer 31G. - However, after activation of the laser, the catalyst dielectric layer 31, with the aid of the catalyst particles 312, can aid in the formation of the patterned wiring layer 33A. The substrate 3〇1 of the composite circuit board structure 300 of the present invention may be a multilayer circuit board. The conductive secret layer may be, for example, a buried wiring structure and/or a non-buried wiring structure. In addition, the dielectric material 311 may comprise a polymer material. The catalyst particles 312 may include a plurality of nanoparticles formed by a coordination compound of a metal. A preferred embodiment of the dielectric material 3ΐι and the catalyst particles can be referred to as the dielectric material 212 as described above, and will not be further described herein. In a preferred embodiment of the present invention, the difference between the highest point of the patterned wire layer 33 and the lowest point of 9 201038400 is not more than 3 mm. In addition, since it contains only the early-copper layer, for example, obtained by a chemical process, = is composed of a relatively different copper, for example, the mixture is composed of 4 continuous physical properties. I. Electro-Electrical Process and General Electroplating Process Ο The present invention further provides a method for forming a composite circuit board structure. The fourth solid example does not form a schematic diagram of the method for forming a composite circuit board structure. As the first method does not 'this hair _ into a composite circuit board structure, money _ ^ ^ r4. The composite structure comprises a substrate and a composite material. The substrate in the composite structure 404 of the present invention may be a multi-layer circuit board, and the conductive circuit layer may be closed as a buried line structure and/or non-buried. Structure ^ structure. The composite dielectric layer 402 can include a -contact dielectric layer and a protective dielectric layer 420. The contact dielectric layer 41G may comprise a dielectric material 411 and at least a catalyst particle 412. The catalyst engraving 412 will be dispersed in the dielectric material 411. Once used, for example, after laser activation, the contact dielectric layer 410, with the aid of the catalyst particles 412, can aid in the formation of a conductive layer. Additionally, the protective dielectric layer 42A may comprise a dielectric material 411 and contact the dielectric layer 410. Depending on the line width dimension, the protective dielectric layer 42 can have a thickness of up to 15 μm. Then, as shown in Fig. 5, the composite dielectric layer 4〇2 is patterned to form trenches 201038400 with the % activated catalyst particles 422 squirting dielectric layer 4〇2. For example, 'you can make a time-fired scaly or Lai Gang ^. You can use a laser source such as an infrared laser, an ultraviolet laser, an L, ^ an Excimer, or an infrared laser. Shooting the remaining process. ‘Next' forms a wire layer gamma as shown in Fig. 6. The wire layer is immersed in the patterned composite dielectric layer 4_ trench 422, so it is placed on the contact dielectric and directly touches the dielectric layer. The conductive material, e.g., copper, can be filled into the trench of the patterned composite dielectric layer 4, 2 using, for example, an electroless forging method to form a wiring layer. The composite material of the present invention can reduce the occurrence of overflow of the composite circuit board structure in the case of electric ore, and avoid the problem that the conductive material extends from the opening of the groove a2 in all directions. For example, 'protecting the dielectric material 421 in the dielectric layer 420 would make the copper less prone to be elongated. Therefore, the wire layer 43 is easily formed only with the aid of the activated over-catalytic particles 412. Under this guidance, the problem of overflow of the electric ore is not easy to occur, so that the problem that the conductive material extends from the opening of the groove 422 in all directions is avoided. In addition, under this guidance, the plating material filled in the trenches 422 in the substrate is not easily conformally deposited, but is filled as uniformly as possible into the trenches 422 of the patterned composite dielectric layer 4〇2. In this way, the surface flatness of the wire layer 430 can be improved. For example, the difference between the highest point and the lowest point of the surface of the wire layer 43 is not more than 3/lm. Since the copper obtained by the chemical process is not exactly the same as the copper obtained by the electroplating process, the wire layer 430 preferably comprises only a single copper layer, for example, obtained by a chemical process, rather than being composed of various physical properties. The copper is composed of, for example, copper obtained by a chemical process and an electroplating process. The preferred embodiment of the composite structure of the present invention, the dielectric material and the catalyst particles 412, may be referred to as the dielectric material 212 as described above, and will not be further described herein. In one embodiment of the invention, as shown in Fig. 7, the composite dielectric layer 402 is sprayed to include a water soluble film 44() as needed. The water soluble film _ is located on the outer surface of the protective dielectric layer 420. The water impurities may be removed prior to forming the wire layer 430 after the patterned composite dielectric layer is removed, thereby avoiding any impurities generated after patterning the composite dielectric layer 4〇2 from affecting the formation of the wire layer 43. The water-repellent film 440 protects the protective dielectric layer 42. The water-soluble film 44 can be made of a hydrophilic molecule such that it can be washed off with water if necessary. For example, the characteristic g energy group of such hydrophilic I1 mashing knives may comprise a functional group such as one of a base (_〇H), an acid filament (10) and 2), a fatty acid group (10)H), __C〇〇H), Or any combination of the foregoing various functional groups. The description of the preferred embodiments of the present invention is intended to cover the scope of the present invention. [Simple description of the diagram] The first example does not have the phenomenon that the electric ore is overflowing due to the existing electroless plating technology. 12 201038400 Figure 2 illustrates a schematic of the composite structure of the present invention. Fig. 3 is a view showing the wall small rounding method of the composite circuit board structure of the present invention. Figure 4-7 illustrates the formation of the composite circuit board of the present invention, and the composition of the components. [Main component symbol description] 101 substrate 122 recess
130導電材料 131表面 200複合材料結構 210觸媒介電層 211介電材料 212觸媒顆粒 220保護介電層 230圖案化導線層 3〇〇複合材料麵板結構 3〇1基材 搬複合材料介電層 310觸媒介電層 311介電材料 312觸媒顆粒 320保護介電層 330圖案化導線層 13 201038400 401基材 402複合材料介電層 404複合材料結構 410觸媒介電層 411介電材料 412觸媒顆粒 420保護介電層 0 422溝槽 430導線層 440水溶性薄膜130 conductive material 131 surface 200 composite material structure 210 contact dielectric layer 211 dielectric material 212 catalyst particle 220 protection dielectric layer 230 patterned wire layer 3 〇〇 composite material panel structure 3 〇 1 substrate moving composite material dielectric Layer 310 contact dielectric layer 311 dielectric material 312 catalyst particles 320 protective dielectric layer 330 patterned wire layer 13 201038400 401 substrate 402 composite dielectric layer 404 composite structure 410 contact dielectric layer 411 dielectric material 412 touch Media particle 420 protects dielectric layer 0 422 trench 430 wire layer 440 water soluble film