CN104900374A - Chip electronic component and manufacturing method thereof - Google Patents
Chip electronic component and manufacturing method thereof Download PDFInfo
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- CN104900374A CN104900374A CN201410448413.6A CN201410448413A CN104900374A CN 104900374 A CN104900374 A CN 104900374A CN 201410448413 A CN201410448413 A CN 201410448413A CN 104900374 A CN104900374 A CN 104900374A
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- coil pattern
- pattern portion
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- thin polymer
- polymer dielectric
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- 238000009413 insulation Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 48
- 230000004888 barrier function Effects 0.000 claims description 34
- 239000003973 paint Substances 0.000 claims description 28
- 230000037452 priming Effects 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 20
- 239000003822 epoxy resin Substances 0.000 claims description 13
- 229920000647 polyepoxide Polymers 0.000 claims description 13
- 229920001721 polyimide Polymers 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 239000000945 filler Substances 0.000 claims description 12
- 239000013034 phenoxy resin Substances 0.000 claims description 12
- 229920006287 phenoxy resin Polymers 0.000 claims description 12
- 229920002492 poly(sulfone) Polymers 0.000 claims description 12
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- 239000004431 polycarbonate resin Substances 0.000 claims description 12
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- 238000003825 pressing Methods 0.000 abstract description 6
- 239000000696 magnetic material Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 18
- 229910000859 α-Fe Inorganic materials 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
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- HBGPNLPABVUVKZ-POTXQNELSA-N (1r,3as,4s,5ar,5br,7r,7ar,11ar,11br,13as,13br)-4,7-dihydroxy-3a,5a,5b,8,8,11a-hexamethyl-1-prop-1-en-2-yl-2,3,4,5,6,7,7a,10,11,11b,12,13,13a,13b-tetradecahydro-1h-cyclopenta[a]chrysen-9-one Chemical compound C([C@@]12C)CC(=O)C(C)(C)[C@@H]1[C@H](O)C[C@]([C@]1(C)C[C@@H]3O)(C)[C@@H]2CC[C@H]1[C@@H]1[C@]3(C)CC[C@H]1C(=C)C HBGPNLPABVUVKZ-POTXQNELSA-N 0.000 description 1
- PFRGGOIBYLYVKM-UHFFFAOYSA-N 15alpha-hydroxylup-20(29)-en-3-one Natural products CC(=C)C1CCC2(C)CC(O)C3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 PFRGGOIBYLYVKM-UHFFFAOYSA-N 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- SOKRNBGSNZXYIO-UHFFFAOYSA-N Resinone Natural products CC(=C)C1CCC2(C)C(O)CC3(C)C(CCC4C5(C)CCC(=O)C(C)(C)C5CCC34C)C12 SOKRNBGSNZXYIO-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910007565 Zn—Cu Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/30—Fastening or clamping coils, windings, or parts thereof together; Fastening or mounting coils or windings on core, casing, or other support
- H01F27/306—Fastening or mounting coils or windings on core, casing or other support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/0206—Manufacturing of magnetic cores by mechanical means
- H01F41/0233—Manufacturing of magnetic circuits made from sheets
- H01F41/024—Manufacturing of magnetic circuits made from deformed sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
- H01F41/046—Printed circuit coils structurally combined with ferromagnetic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2809—Printed windings on stacked layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49073—Electromagnet, transformer or inductor by assembling coil and core
Abstract
The manufacturing method of a chip electronic component may include: forming a coil pattern part on at least one surface of an insulating substrate; forming a thin polymer insulating film to follow a surface shape of the coil pattern part; forming a primer insulating layer on one surface of a magnetic sheet; disposing the magnetic sheet on which the primer insulating layer is formed on an upper portion and a lower portion of the insulating substrate on which the coil pattern part is formed and pressing the magnetic sheet to form a magnetic body in which an additional insulating film is formed on the coil pattern part; and forming an external electrode on at least one end surface of the magnetic body so as to be connected to the coil pattern part.
Description
The cross reference of related application
This application claims the rights and interests that on March 7th, 2014 submits the korean patent application No.10-2014-0027292 in Korean Intellectual Property Office, this Korean Patent is incorporated in the application by reference.
Background technology
The disclosure relates to a kind of electronic element and manufacture method thereof.
Inductor, it is one of electronic element, is a kind of typical passive device, forms electronic circuit to remove noise with resistance together with electric capacity.This inductor can be combined with capacitor, utilizes electromagnetic property to configure the resonant circuit, filter circuit etc. of the signal amplified in special frequency band.
At present, along with information technology (IT) equipment is as various communication equipment, the development of the miniaturization of display etc. and the trend of slimming, to the various devices used in information technoloy equipment, as inductor, capacitor, the miniaturization of transistor etc. and the technical research of slimming are constantly being unfolded.Inductor has been had small size and high density and the chip that can automatically mount substitutes rapidly, is formed in the coil pattern (pattern) on the upper surface of film-insulated substrate and lower surface and the development of thin inductance device that formed is implemented by being applied to by magnetic and mixed with resin and by this mixture by plating.
According to above-described thin inductance device, coil pattern is formed on an insulating substrate, and then insulating barrier is formed thereon, to prevent the contact between coil pattern and external magnetic material.
But, when forming insulating material according to correlation technique by laminating etc., need the insulating barrier of enough width to form the comparatively lower part of insulating barrier to coil.Because the volume occupied by external magnetic material is reduced according to the increase of the width of insulating barrier, the generation of the defect that the inductance as inductor may be caused to reduce etc.
Therefore, the development of thin inductance device by this way always: increase inductance by the thickness reducing insulating barrier.But, when applying with the method for minimum thickness formation insulating barrier, the nonisulated region of coil may be formed.
Due to the formation in nonisulated region described above, by the direct contact between metallicl magnetic material (it is magnetic material) isopachic loop graph case, leakage current may be produced.Therefore, due to the generation of leakage current, normal inductance can be presented in the frequency of 1MHz, but may reduce rapidly under high frequency condition, thus occur defective waveform.
Therefore, according to correlation technique, perform the independent supplementary insulation process of the nonisulated defect for preventing coil, but also there is the problem of process complexity, processability deterioration, and be inappreciable for the improvement of defect.
Correlation technique file
(patent document 1) Japanese Patent Laid-Open Publication No.2005-210010
(patent document 2) Japanese Patent Laid-Open Publication No.2008-166455
Summary of the invention
One side of the present disclosure can provide a kind of electronic element and manufacture method thereof, the nonisulated defect that the formation of the thin dielectric layer that this electronic element can reduce owing to not having independent supplementary insulation process causes, thus prevent the defective waveform at high frequency, and the inductance of inductor can be increased, etc.
According to one side of the present disclosure, the manufacture method of electronic element can comprise: form coil pattern portion on the surface at least one of dielectric substrate; Form thin polymer dielectric film to follow the surface configuration in coil pattern portion; A surface of magnetic sheet forms priming paint insulating barrier; The magnetic sheet it being formed with priming paint insulating barrier is settled in the upper and lower being formed with the dielectric substrate in coil pattern portion thereon, and suppresses magnetic sheet to be formed wherein supplementary insulation film and be formed on the magnet in described coil pattern portion; And outer electrode is formed to be connected to coil pattern portion at least one end face of magnet.
Supplementary insulation film can be formed on thin polymer dielectric film to follow the surface configuration in coil pattern portion.
Supplementary insulation film can be formed to cover the entirety in the coil pattern portion it being formed with thin polymer dielectric film.
Thin polymer dielectric film is formed by chemical vapour deposition (CVD) (CVD) method.
It is one or more that thin polymer dielectric film can comprise in the group being selected from and being made up of poly-(terephthaldehyde), epoxy resin, polyimide resin, phenoxy resin, polysulfone resin and polycarbonate resin.
It is one or more that priming paint insulating barrier can comprise in the group being selected from and being made up of epoxy resin, polyimide resin, phenoxy resin, polysulfone resin and polycarbonate resin.
Priming paint insulating barrier can comprise filler.
Thin polymer dielectric film can be formed the thickness with 1 μm to 3 μm.
Priming paint insulating barrier can have the thickness of 1 μm to 5 μm.
Magnetic material can fill the region between the coiler part in the coil pattern portion it being formed with described thin polymer dielectric film and supplementary insulation film.
According to another aspect of the present disclosure, a kind of electronic element can comprise: magnet, and this magnet comprises dielectric substrate; Coil pattern portion, be formed in dielectric substrate at least one on the surface; Dielectric film, is formed on the surface in coil pattern portion; And outer electrode, be formed at least one end face of magnet, and be connected to coil pattern portion, wherein, dielectric film comprises thin polymer dielectric film and supplementary insulation film, to follow the surface configuration in coil pattern portion on the surface that thin polymer dielectric film is formed in coil pattern portion, supplementary insulation film be formed thereon be formed with described thin polymer dielectric film coil pattern portion on to follow the surface configuration in coil pattern portion.
Supplementary insulation film can be formed to cover the entirety in the coil pattern portion it being formed with thin polymer dielectric film.
It is one or more that thin polymer dielectric film can comprise in the group being selected from and being made up of poly-(terephthaldehyde), epoxy resin, polyimide resin, phenoxy resin, polysulfone resin and polycarbonate resin.
It is one or more that supplementary insulation film can comprise in the group being selected from and being made up of epoxy resin, polyimide resin, phenoxy resin, polysulfone resin and polycarbonate resin.
Supplementary insulation film can comprise filler.
Thin polymer dielectric film can be formed the thickness with 1 μm to 3 μm.
Supplementary insulation film can have the thickness of 1 μm to 5 μm.
Magnetic material can fill the region between the coiler part in the coil pattern portion it being formed with described thin polymer dielectric film and supplementary insulation film.
Accompanying drawing explanation
Above and other aspect of the present disclosure, other advantages of characteristic sum more clearly will be understood according to the detailed description below in conjunction with accompanying drawing, wherein:
Fig. 1 to 4 is views of the manufacture method of the electronic element sequentially illustrated according to disclosure illustrative embodiments;
Fig. 5 shows the perspective illustration of the electronic element according to disclosure example embodiment, and wherein coil pattern portion is illustrated;
Fig. 6 is the viewgraph of cross-section of the straight line I-I ' along Fig. 5.
Embodiment
Referring now to accompanying drawing, illustrative embodiments of the present disclosure is described in detail.
The disclosure may illustrate in many different forms, but should not be understood to be restricted to specific execution mode described here.Or rather, provide these embodiments to make the disclosure to be thorough and complete, and the scope of the present disclosure will be passed on fully for those skilled in the art.
In accompanying drawing, in order to clear, the shape and size of element may be exaggerated, and identical label will be used for representing same or analogous element all the time.
The manufacture method of electronic element
Fig. 1 to 4 is views of the manufacture method of the electronic element sequentially illustrated according to disclosure illustrative embodiments;
With reference to figure 1, first, coil pattern portion 40 can be formed in dielectric substrate 20 at least one on the surface.
Dielectric substrate 20 is not particularly limited.Such as, polypropylene glycol (PPG) substrate, ferrite substrate can be used, based on the soft magnetic material of metal or similar to dielectric substrate 20, and dielectric substrate can have the thickness of 40 to 100 μm μm.
Such as galvanoplastic can be used as the method forming coil pattern portion 40, but the disclosure is not limited thereto.Coil pattern portion 40 can be formed by the metal with good conductivity.Such as, silver (Ag) can be used, palladium (Pd), aluminium (Al), nickel (Ni), titanium (Ti), gold (Au), copper (Cu), or platinum (Pt), or their mixing etc.
Through hole electrode (via electrode) 45 can form hole and use filled with conductive material hole to be formed by the part in dielectric substrate 20, and another surface being formed in the coil pattern portion 40 on a surface of dielectric substrate 20 thus and being formed in dielectric substrate 20 is which coil pattern portion 40 can be electrically connected to each other by through hole electrode 45.
By performing bore process, laser technology, blasting craft or Sheet Metal Forming Technology etc. to the core of dielectric substrate 20, the via hole (through hole) 55 penetrating dielectric substrate 20 can be formed in the core of dielectric substrate 20.
With reference to figure 2, thin polymer dielectric film 31 can be formed in coil pattern portion 40 to follow the surface configuration in coil pattern portion 40.
By chemical vapour deposition (CVD) (CVD) method or infusion process, use low viscosity polymer coating solution, thin polymer dielectric film 31 can be formed.
Passing through CVD or infusion process, when using low viscosity polymer coating solution to form dielectric film, the surface of the thin polymer dielectric film 31 of formation can be formed to follow the surface configuration in coil pattern portion 40 thinly.
When applying CVD, wherein dimer can be used to exist with vapour phase and the compounds being cracked into monomer at 650 DEG C to 700 DEG C form thin polymer dielectric film 31 at 120 DEG C to 180 DEG C.Such as, can use poly-(terephthaldehyde).
This polymer any polymer can be used as using the polymer used in the infusion process of low viscosity polymer, as long as can form thin dielectric membrane.Such as, epoxy resin, polyimide resin, phenoxy resin, polysulfone resin, polycarbonate resin etc., can be used alone or their combination can be used.
Thin polymer dielectric film 31 can be formed to have 3 μm or less thickness, more preferably 1 μm to 3 μm.
When the thickness of the thin polymer dielectric film 31 formed is less than 1 μm, during the arrangement and pressing process of magnetosphere, dielectric film may be impaired, so that produce defectiveness waveform due to the contact between coil pattern portion 4 and external magnetic material, and when the thickness of the thin polymer dielectric film 31 formed is greater than 3 μm, the volume occupied by magnetic material can reduce according to the increase of the thickness of dielectric film, so that occurs the restriction to the increase of inductance.
With reference to figure 3, priming paint (primer) insulating barrier 32 ' can be formed on a surface of magnetic sheet 51, and the magnetic sheet 51 it being formed with priming paint insulating barrier 32 ' can be placed the upper and lower of the dielectric substrate 20 being formed with coil pattern portion 40 thereon, is then pressed.
Therefore, magnet 50 can be formed, and wherein supplementary insulation film 32 is formed and is formed thereon in the coil pattern portion 40 of thin polymer dielectric film 31.
Be formed there is little thickness increase is filled with the volume of magnetic material, can partly form nonisulated region at thin polymer dielectric film 31, thus produce defectiveness waveform.Therefore, according to illustrative embodiments of the present disclosure, owing to passing through to form priming paint insulating barrier 32 ' and settle and be compressed in dielectric substrate 20 by the magnetic sheet 51 it being formed with priming paint insulating barrier 32 ' on a surface of magnetic sheet 51, supplementary insulation film 32 can be formed in coil pattern portion 40, and do not need independent supplementary insulation process, can reduce by this by the nonisulated defect caused of coil.
During having the arrangement and pressing process that priming paint insulating barrier 32 ' is formed the surperficial magnetic sheet 51 of thereon one, supplementary insulation film 32 can be formed on thin polymer dielectric film 31 to follow the surface configuration in coil pattern portion 40.
Because the supplementary insulation film 32 formed as mentioned above can cover the entirety in coil pattern portion 40, therefore can significantly reduce nonisulated region.
Priming paint insulating barrier 32 ' can be formed by any materials, and does not limit, as long as this material usually can be used as the material of dielectric film.Such as, priming paint insulating barrier 32 ' can comprise select from the group be made up of epoxy resin, polyimide resin, phenoxy resin, polysulfone resin, polycarbonate resin etc. any one or more.
Meanwhile, priming paint insulating barrier 32 ' can also comprise filler.
Because priming paint insulating barrier 32 ' is manufactured into sheet, and to be formed on a surface of magnetic sheet 51, so can filler be increased so that formability improving sheet etc.
By increasing filler, formability and the insulation property of the priming paint insulating barrier 32 ' of sheet form can be enhanced.
Any materials can be used as filler, and does not limit, as long as this material can improve formability and have insulation property.Such as, silicon dioxide etc. can be used.
The thickness of priming paint insulating barrier 32 ' can be 1 μm to 5 μm.
When the thickness of priming paint insulating barrier 32 ' is less than 1 μm, the supplementary insulation film 32 forming the entirety covering coil pattern portion 40 is difficult, so that it may be difficult for significantly reducing nonisulated region, and when the thickness of priming paint insulating barrier 32 ' is greater than 5 μm, the volume occupied by magnetic material may be reduced according to the increase of the thickness of dielectric film, so that may there is the restriction of the increase to inductance.
There is the magnetic sheet 51 that priming paint insulating barrier 32 ' is formed thereon one surperficial can stackingly be formed thereon on two surfaces of the dielectric substrate 20 in coil pattern portion 40, and be then pressed by laminating or isostatic pressed method for making.In this case, via hole 55 can form the core component being filled with magnetic material.
In addition, magnetic material can fill the region between the coiler part in the coil pattern portion 40 it being formed with thin polymer dielectric film 31 and supplementary insulation film 32.
Because the surface of thin polymer dielectric film 31 and supplementary insulation film 32 is formed to follow the surface configuration in coil pattern portion 40 thinly, in the region between coiler part, form space.During the arrangement and pressing process of magnetosphere, magnetic material can fill this space.Due to same material coil pattern portion 40 coiler part between region, the volume occupied by magnetic material is increased, so that inductance can increase according to the increase of the volume of magnetic material.
With reference to figure 4, outer electrode 80 is formed to be connected to coil pattern portion 40, exposes at least one end face of magnet 50.
Outer electrode 80 can use the binder (paste) comprising the metal with good conductivity to be formed, and this binder can be the conducting resinl of the alloy comprising separately such as nickel (Ni), copper (Cu), tin (Sn) or silver (Ag) or comprise them.According to the shape of outer electrode 80, can being formed with impact system by infusion process etc. of outer electrode 80.
Electronic element
Hereinafter, the electronic element according to disclosure illustrative embodiments will be described.Especially, thin inductance device will be described by citing, but the disclosure is not restricted to this.
Fig. 5 shows the perspective illustration of the electronic element according to disclosure illustrative embodiments, illustrated therein is Inside coil portion; Fig. 6 is the viewgraph of cross-section of the straight line I-I ' along Fig. 5.
With reference to figure 5 and Fig. 6, as the example of electronic element, be disclosed for the thin inductance device 100 in the power line of power circuit.Except chip inductor, chip magnetic bead, chip-type filter etc. can be used as electronic element by suitable.
Thin inductance device 100 can comprise magnet 50, dielectric substrate 20, coil pattern portion 40 and outer electrode 80.
Magnet 50 can form the outside of slim plate type inductor 100, and can be formed by the material that can show arbitrarily magnetic characteristic.Such as, magnet 50 can by filling ferrite material or being formed based on the soft magnetic material of metal.
The example of ferrite material can be included in ferrite as known in the art, such as, based on the ferrite of Mn-Zn, the ferrite based on Ni-Zn, the ferrite based on Ni-Zn-Cu, the ferrite based on Mn-Mg, the ferrite based on Ba, ferrite etc. based on Li.
Soft magnetic material based on metal can be the alloy comprising at least one selected from the group be made up of Fe, Si, Cr, Al and Ni.Such as, the soft magnetic material based on metal can comprise the amorphous metal particle based on Fe-Si-B-Cr, but is not restricted to this.
Soft magnetic material based on metal can have the particle diameter of 0.1 μm to 30 μm, and can be involved with the form of Granular composite on polymer (such as epoxy resin, polyimides etc.).
Magnet 50 can have hexahedral shape, and in order to clear description illustrative embodiments of the present disclosure, hexahedral direction will be defined.L, W and T shown in Fig. 5 refers to length direction, Width and thickness direction respectively.Magnet 50 can have the rectangular shape that length is greater than width.
The dielectric substrate 20 be formed in magnet 50 can be such as polypropylene glycol (PPG) substrate, ferrite substrate, soft magnetic material etc. based on metal.
Hole penetrates the middle body of dielectric substrate 20 to form via hole 55, and via hole 55 can by same material, such as ferrite material or the soft magnetic material etc. based on metal, thus forms core component.Can be formed by the core component of same material, so that inductance L can improve.
The coil pattern portion 40 with coiled type pattern can be formed on a surface of dielectric substrate 20, and the coil pattern portion 40 with coiled type pattern can also be formed on dielectric substrate 20 another on the surface.
In coil pattern portion 40, coil pattern can be formed with spirality.By being formed in the through hole electrode 45 in dielectric substrate 20, the coil pattern portion 40 be formed on a surface of dielectric substrate 20 can be electrically connected to each other with the coil pattern portion 40 be formed on another surface of dielectric substrate 20.
Coil pattern portion 40 and through hole electrode 45 can be formed by the metal with good conductivity.Such as, coil pattern portion 40 and through hole electrode 45 can be formed by silver (Ag), palladium (Pd), aluminium (Al), nickel (Ni), titanium (Ti), gold (Au), copper (Cu), platinum (Pt), their alloy etc.
The thin polymer dielectric film 31 covering coil pattern portion 40 can be formed on the surface in coil pattern portion 40.
The surface of thin polymer dielectric film 31 is formed the surface configuration following coil pattern portion 40.The surface of thin polymer dielectric film 31 is formed the surface configuration following coil pattern portion 40, mean that the surface of thin polymer dielectric film 31 is formed in a similar fashion at thin polymer dielectric film 31 as shown in Figure 6 by thinly coated with when following the surface configuration in coil pattern portion 40.
As mentioned above, chemical vapour deposition (CVD) (CVD) method or the formation of infusion process use low viscosity polymer coating solution can be passed through according to the thin polymer dielectric film 31 of disclosure illustrative embodiments.
Thin polymer dielectric film 31 can be formed to have 3 μm or less thickness, more preferably 1 μm to 3 μm.
When the thickness of the thin polymer dielectric film 31 formed is less than 1 μm, during the arrangement and pressing process of magnetosphere, dielectric film may be impaired, so that produce defectiveness waveform due to the contact between coil pattern portion 40 and external magnetic material, and when the thickness of the thin polymer dielectric film 31 formed is greater than 3 μm, the volume occupied by magnetic material is reduced according to the increase of the thickness of dielectric film, so that may there is the restriction of the increase to inductance.
Thin polymer dielectric film 31 can comprise separately poly-(terephthaldehyde), epoxy resin, polyimide resin, phenoxy resin, polysulfone resin and polycarbonate resin etc. or comprise their mixture, but is not restricted to this.
Supplementary insulation film 32 can be formed and be formed thereon in the coil pattern portion 40 of thin polymer dielectric film 31, to follow the surface configuration in coil pattern portion 40.
When in order to increase the volume, the thin polymer dielectric film 31 that are filled with magnetic material be formed that there is little thickness, partly may form nonisulated region (' A ' in Fig. 6), thus produce defectiveness waveform.Therefore, according to illustrative embodiments of the present disclosure, by forming priming paint insulating barrier 32 ' and settle and compacting magnetic sheet 51 on a surface of magnetic sheet 51, supplementary insulation film 32 can be formed in coil pattern portion 40, and does not need supplementary insulation process.
Be formed in the coil pattern portion 40 of thin polymer dielectric film 31 thereon because supplementary insulation film 32 can be formed, to cover the entirety in coil pattern portion 40, therefore can significantly reduce nonisulated region.
Supplementary insulation film 32 can be formed by any materials, and does not limit, as long as this material usually can be used as the material of dielectric film.Such as, supplementary insulation film 32 can comprise select from the group be made up of epoxy resin, polyimide resin, phenoxy resin, polysulfone resin and polycarbonate resin one or more.
Meanwhile, supplementary insulation film 32 can also comprise filler.
Because priming paint insulating barrier 32 ' is manufactured into sheet, and be formed on a surface of magnetic sheet 51, and then between the Formation period of supplementary insulation film 32, magnetic sheet 51 is placed and suppresses, so can increase filler to improve with formability of the priming paint insulating barrier 32 ' of sheet form etc.
Formability and the insulation property of the priming paint insulating barrier 32 ' of sheet form can be improved by increasing filler.
Any materials can be used as filler, and does not limit, as long as this material can improve formability and have insulation property.Such as, silicon dioxide etc. can be used.
The thickness of supplementary insulation film 32 can be 1 μm to 5 μm.
When the thickness of supplementary insulation film 32 is less than 1 μm, it is difficult for forming the entirety covering coil pattern portion 40, so that it may be difficult for significantly reducing nonisulated region, and when the thickness of supplementary insulation film 32 is greater than 5 μm, the volume occupied by magnetic material may be reduced according to the increase of the thickness of dielectric film, so that may there is the restriction of the increase to inductance.
Meanwhile, magnetic material can fill the region between the coiler part in the coil pattern portion 40 it being formed with thin polymer dielectric film 31 and supplementary insulation film 32.
Because the surface of thin polymer dielectric film 31 and supplementary insulation film 32 is formed to follow the surface configuration in coil pattern portion 40 thinly, in the region between coiler part, form space.In the arrangement and pressing process of magnetosphere, magnetic material can fill this space.Due to same material coil pattern portion 40 coiler part between region, the volume occupied by magnetic material is increased, so that inductance can increase according to the increase of the volume of magnetic material.
According to above illustrative embodiments of the present disclosure, will be omitted with the equitant other feature of electronic element manufacture method.
As previously mentioned, use the electronic element according to disclosure illustrative embodiments and manufacture method thereof, can be reduced by the nonisulated defect forming generation of thin dielectric layer, and not need independent supplementary insulation process.
Therefore, the process of simplification can be implemented, and the defective waveform when high frequency produced by the nonisulated region of coil can be prevented from.In addition, because thin dielectric layer is formed, inductance of inductor etc. can be enhanced.
Although below illustrate and describe illustrative embodiments, it is evident that in the spirit and scope that those skilled in the art can limit in the claim do not departed from attached by the disclosure and modify and change.
Claims (18)
1. a manufacture method for electronic element, this manufacture method comprises:
Coil pattern portion is formed on the surface at least one of dielectric substrate;
Form thin polymer dielectric film to follow the surface configuration in described coil pattern portion;
A surface of magnetic sheet forms priming paint insulating barrier;
The magnetic sheet it being formed with described priming paint insulating barrier is settled in the upper and lower being formed with the described dielectric substrate in described coil pattern portion thereon, and suppresses described magnetic sheet to be formed wherein supplementary insulation film and be formed on the magnet in described coil pattern portion; And
At least one end face of described magnet forms outer electrode to be connected to described coil pattern portion.
2. manufacture method according to claim 1, wherein said supplementary insulation film is formed on described thin polymer dielectric film to follow the surface configuration in described coil pattern portion.
3. manufacture method according to claim 1, wherein said supplementary insulation film is formed to cover the entirety in the coil pattern portion it being formed with thin polymer dielectric film.
4. manufacture method according to claim 1, wherein said thin polymer dielectric film is formed by chemical vapour deposition technique.
5. manufacture method according to claim 1, it is one or more that wherein said thin polymer dielectric film comprises in the group being selected from and being made up of poly-(terephthaldehyde), epoxy resin, polyimide resin, phenoxy resin, polysulfone resin and polycarbonate resin.
6. manufacture method according to claim 1, it is one or more that wherein said priming paint insulating barrier comprises in the group being selected from and being made up of epoxy resin, polyimide resin, phenoxy resin, polysulfone resin and polycarbonate resin.
7. the manufacture method according to claim, wherein said priming paint insulating barrier comprises filler.
8. manufacture method according to claim 1, wherein said thin polymer dielectric film is formed the thickness with 1 μm to 3 μm.
9. manufacture method according to claim 1, wherein said priming paint insulating barrier has the thickness of 1 μm to 5 μm.
10. manufacture method according to claim 1, wherein same material it is formed with the region between the coiler part in the described coil pattern portion of described thin polymer dielectric film and described supplementary insulation film.
11. 1 kinds of electronic elements, this electronic element comprises:
Magnet, this magnet comprises dielectric substrate;
Coil pattern portion, be formed in described dielectric substrate at least one on the surface;
Dielectric film, is formed on the surface in described coil pattern portion; And
Outer electrode, is formed at least one end face of described magnet, and is connected to described coil pattern portion,
Wherein, described dielectric film comprises thin polymer dielectric film and supplementary insulation film, to follow the surface configuration in described coil pattern portion on the surface that described thin polymer dielectric film is formed in described coil pattern portion, described supplementary insulation film be formed thereon be formed with described thin polymer dielectric film described coil pattern portion on to follow the surface configuration in described coil pattern portion.
12. electronic elements according to claim 11, wherein said supplementary insulation film is formed to cover the entirety in the described coil pattern portion it being formed with described thin polymer dielectric film.
13. electronic elements according to claim 11, it is one or more that wherein said thin polymer dielectric film comprises in the group being selected from and being made up of poly-(terephthaldehyde), epoxy resin, polyimide resin, phenoxy resin, polysulfone resin and polycarbonate resin.
14. electronic elements according to claim 11, it is one or more that wherein said supplementary insulation film comprises in the group being selected from and being made up of epoxy resin, polyimide resin, phenoxy resin, polysulfone resin and polycarbonate resin.
15. electronic elements according to claim 11, wherein said supplementary insulation film comprises filler.
16. electronic elements according to claim 11, wherein said thin polymer dielectric film is formed the thickness with 1 μm to 3 μm.
17. electronic elements according to claim 11, wherein supplementary insulation film has the thickness of 1 μm to 5 μm.
18. electronic elements according to claim 11, wherein same material it is formed with the region between the coiler part in the described coil pattern portion of described thin polymer dielectric film and above-mentioned supplementary insulation film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140027292A KR101942725B1 (en) | 2014-03-07 | 2014-03-07 | Chip electronic component and manufacturing method thereof |
| KR10-2014-0027292 | 2014-03-07 |
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| CN104900374A true CN104900374A (en) | 2015-09-09 |
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| US (1) | US9496084B2 (en) |
| JP (1) | JP6058582B2 (en) |
| KR (1) | KR101942725B1 (en) |
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Also Published As
| Publication number | Publication date |
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| CN104900374B (en) | 2018-06-29 |
| JP6058582B2 (en) | 2017-01-11 |
| US9496084B2 (en) | 2016-11-15 |
| KR101942725B1 (en) | 2019-01-28 |
| KR20150105088A (en) | 2015-09-16 |
| JP2015170844A (en) | 2015-09-28 |
| US20150255206A1 (en) | 2015-09-10 |
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